ДЕТЕКТОР ИЗЛУЧЕНИЯ С НАПРАВЛЯЮЩИМИ ЭЛЕКТРОДАМИ

Изобретение относится к детектору излучения и соответствующему способу детектирования излучения. Детектор (100-400) излучения содержит элемент-преобразователь (110) для преобразования падающего излучения (X) в электрические сигналы; периодический или квазипериодический массив анодов (130-430), расположенный на первой стороне элемента-преобразователя (110); по меньшей мере два направляющих электрода (140-440), которые расположены примыкающими к двум различным анодам; блок (150) управления, который подсоединен к упомянутым по меньшей мере двум направляющим электродам (140-440) и приспособлен подавать различные электрические потенциалы на упомянутые по меньшей мере два направляющих электрода (140-440), при этом упомянутые потенциалы являются функцией напряжений холостого хода, которые возникают между направляющим электродом (140-440) и соответствующим анодом, когда между соответствующими анодами (130-430) и катодом (120) подается напряжение. Технический результат - повышение точности детектирования ...

ДЕТЕКТОР ИЗЛУЧЕНИЯ ПРЯМОГО ПРЕОБРАЗОВАНИЯ

Группа изобретений относится к детектору излучения прямого преобразования. Детектор излучения прямого преобразования содержит слой прямого преобразования, содержащий материал прямого преобразования для прямого преобразования падающего излучения от источника излучения в пары электрон-дырка, первый электрод, установленный на слое прямого преобразования обращенным к источнику излучения, второй электрод, установленный на противоположной стороне слоя прямого преобразования относительно первого электрода, средство для приложения электрического потенциала между первым электродом и вторым электродом, при этом материал прямого преобразования содержит гранат с составом Z(AlGa)O:Ce, в котором Z представляет собой Lu, Gd, Y, Tb или их сочетания и в котором y равен или больше x; и, предпочтительно, Z содержит Gd. Технический результат – повышение спектральной чувствительности детектора. 3 н. и 11 з.п. ф-лы, 7 ил.

ОПРЕДЕЛЕНИЕ СМЕЩЕНИЯ БАЗОВОЙ ЛИНИИ ДЕТЕКТОРА ФОТОНОВ

Использование: для определения смещения базовой линии электрического сигнала, сгенерированного детектором фотонов устройства для рентгеновского исследования. Сущность изобретения заключается в том, что детектор фотонов содержит блок обработки, выполненный с возможностью определения первой частоты пересечения первого порога амплитуды импульса электрическим сигналом, сгенерированным детектором фотонов. Первый порог амплитуды импульса располагается на первом фронте шумового пика в спектре амплитуды импульса электрического сигнала. Технический результат: обеспечение возможности более точного определения смещения базовой линии сигнала, сгенерированного детектором фотонов. 6 н. и 8 з.п. ф-лы, 5 ил.

ИЗМЕРИТЕЛЬНЫЙ МОДУЛЬ, СОДЕРЖАЩИЙ ИНТЕРФЕЙС ДЛЯ СОЕДИНЕНИЯ С ЛАЗЕРНЫМ ПРИБОРОМ

Изобретение относится к медицине. Устройство для лазерной терапии глаз содержит лазерный прибор и первый и второй вспомогательные модули. Лазерный прибор выполнен с возможностью обеспечения сфокусированного лазерного излучения и имеет соединительный порт. Первый вспомогательный модуль может формировать интерфейс пациента и имеет контактную поверхность для глаза. Второй вспомогательный модуль содержит измерительный прибор, который выполняет измерения лазерного излучения. В некоторых вариантах осуществления измерения включают измерение длительности импульса лазерного излучения с использованием детектора, работающего на основе двухфотонного поглощения. Первый и второй вспомогательные модули выполнены с возможностью разъемного соединения с лазерным прибором через соединительный порт. Только один вспомогательный модуль может быть соединен с соединительным портом в каждый момент времени. Таким образом, первый вспомогательный модуль должен быть удален из соединительного порта до того, как второй ...

Способ определения радиационного ресурса приборов

Настоящее техническое решение относится к определению радиационного ресурса приборов. Технический результат заключается в определении радиационного ресурса приборов при функционировании в полях ионизирующих излучений, для предотвращения неконтролируемых отказов и обеспечения безотказной эксплуатации в полях ионизирующих излучений. Технический результат достигается за счёт того, что сначала определяют плотность прямого тока p-i-n-диода от напряжения до радиационных воздействий, затем регистрируют плотность прямого тока p-i-n-диода с увеличением уровня ионизирующих излучений, фиксируют уровень ионизирующих излучений, при котором прямое напряжение, соответствующее плотности прямого тока p-i-n-диода j0пр, определяемой выражением (2⋅m⋅k⋅T⋅M⋅τ⋅Kτ⋅σ2)/(q⋅Wб⋅(dσ/dФ)), перестает уменьшаться и фиксируется его рост, и выбирают это значение критерием уменьшения ресурса приборов, требующим их замены для обеспечения безотказной работы оборудования. 1 ил.

ДЕТЕКТИРОВАНИЕ РЕНТГЕНОВСКОГО ИЗЛУЧЕНИЯ ИНТЕРФЕРЕНЦИОННОЙ КАРТИНЫ В ПАДАЮЩЕМ РЕНТГЕНОВСКОМ ИЗЛУЧЕНИИ ПРИ ФАЗОВО-КОНТРАСТНОЙ И/ИЛИ ТЕМНОПОЛЬНОЙ РЕНТГЕНОВСКОЙ ВИЗУАЛИЗАЦИИ

Группа изобретений относится к детектированию рентгеновского излучения и выполнена с возможностью непосредственно демодулировать интенсивность полос с использованием структурированного сцинтиллятора, имеющего множество пластин, выставленных с субпикселями слоя оптических детекторов, в сочетании со способами электронного считывания сигналов. Следовательно, из системы фазово-контрастной рентгеновской визуализации можно исключить механически подвижную третью абсорбционную дифракционную решетку анализатора. Технический результат – повышение точности рентгеновских изображений. 5 н. и 9 з.п. ф-лы, 12 ил.

СЕНСОРНОЕ УСТРОЙСТВО И СИСТЕМА ВИЗУАЛИЗАЦИИ ДЛЯ ОБНАРУЖЕНИЯ СИГНАЛОВ ИЗЛУЧЕНИЯ

Изобретение относится к сенсорному устройству для обнаружения сигналов излучения. Для обеспечения высокой целостности сигналов и сохранения способности к четырехсторонней стыковке сенсорное устройство содержит сенсорную матрицу, содержащую множество детекторов, сенсорный элемент для преобразования принятых сигналов излучения в множество соответствующих электрических сигналов, элемент интерпозера, простирающийся поперечно между первой боковой стороной и второй боковой стороной, и элемент интегральной схемы. Элемент интерпозера имеет переднюю поверхность, обращенную к сенсорному элементу, и заднюю поверхность, параллельную передней поверхности, причем на передней поверхности предусмотрена первая контактная структура для направления электрических сигналов на заднюю контактную структуру, предусмотренную на задней поверхности. Элемент интегральной схемы обращен к задней поверхности и электрически соединен с задней контактной структурой. 2 н. и 13 з.п. ф-лы, 7 ил.

ИЗМЕРИТЕЛЬНЫЙ МОДУЛЬ, СОДЕРЖАЩИЙ ИНТЕРФЕЙС ДЛЯ СОЕДИНЕНИЯ С ЛАЗЕРНЫМ ПРИБОРОМ

Полупроводниковый пиксельный детектор заряженных сильно ионизирующих частиц (многозарядных ионов)

ДЕТЕКТОР СЧЕТА ФОТОНОВ

... 1. Детекторная матрица (110), содержащая:по меньшей мере один пиксель (114-114) детектора прямого преобразования, выполненный с возможностью обнаружения фотонов полихроматического ионизирующего излучения, причем пиксель содержит:катодный слой (116);анодный слой (118), включающий в себя анодный электрод (118-118) для каждого по меньшей мере одного пикселя детектора;материал (120) прямого преобразования, расположенный между катодным слоем и анодным слоем;управляющий электрод, расположенный в материале прямого преобразования, параллельном и расположенном между катодным и анодным слоями; иконтроллер (124) напряжения пикселей, электрически соединенный с управляющим электродом, причем контроллер напряжения пикселей выполнен с возможностью альтернативного приложения одного из двух различных напряжений к управляющему электроду во время процедуры получения изображений, основываясь на скорости счета фотонов за заданный период скорости счета.2. Детекторная матрица по п. 1, дополнительно содержащая ...

ОПРЕДЕЛЕНИЕ СМЕЩЕНИЯ БАЗОВОЙ ЛИНИИ ДЕТЕКТОРА ФОТОНОВ

ПИКСЕЛЬ ДЕТЕКТОРА СО СЧЕТОМ ФОТОНОВ, КОТОРЫЙ ИМЕЕТ АНОД, СОДЕРЖАЩИЙ ДВА ИЛИ БОЛЕЕ ПООЧЕРЕДНО ВЫБИРАЕМЫХ И РАЗДЕЛЬНЫХ ПОД-АНОДА

... 1. Система (100) визуализации, которая содержит:источник (112) излучения, который испускает излучение, которое проходит через область исследования;детекторную матрицу (114) с множеством пикселей (116) детектора со счетом фотонов, которые детектируют излучение, проходящее через область исследования, и соответствующим образом генерируют сигнал, показывающий детектированное излучение, причем пиксель детектора со счетом фотонов содержит:слой (122) прямого преобразования, который имеет первую принимающую излучение сторону (202) и вторую противоположную сторону (206);катод (118), прикрепленный к и покрывающий всю или значительную часть первой стороны;анод (120), прикрепленный к центрально расположенной области (208) второй стороны, причем анод содержит по меньшей мере два под-анода (120, 120, 120, 120); иметаллизацию (124), прикрепленную ко второй стороне, окружающую анод и область анода, с зазором между анодом и металлизацией; иподложку (128), которая имеет по меньшей мере две контактные площадки ...

Bilddetektor und Verfahren zum Betrieb eines Bilddetektors

Bilddetektor (2), insbesondere für Röntgenstrahlung, umfassend eine regelmäßige Anordnung von Bildpixeln (20), die mehrere Detektorpixel (22) aufweisen, dadurch gekennzeichnet, dass sich zumindest zwei der Detektorpixel (22) eines Bildpixels (20) hinsichtlich ihrer Sensitivität unterscheiden, so dass mit diesen unterschiedliche Teilbereiche eines Dynamikumfangs einer Strahlungsintensität messtechnisch erfasst werden,- wobei zur Manipulation der Sensitivität zumindest ein Detektorpixel (22) eines jeden mehrere Detektorpixel (22) aufweisenden Bildpixels (20) ein Filterelement (14) aufweist, welches nach dem Prinzip zweier hintereinander geschalteter Polarisationsfilter einen vorbestimmten Anteil des vom vorgeschalteten Szintillatorvolumen ausgesandten Lichtes herausfiltert,- oder wobei jedes Detektorpixel (22) einen lichtempfindlichen Halbleitersensor (16) umfasst und die sich hinsichtlich ihrer Sensitivität unterscheidenden Detektorpixel (22) unterschiedliche Halbleitersensoren (16) aufweisen ...

Detektionsschicht umfassend beschichtete anorganische Nanopartikel

Die vorliegende Erfindung betrifft eine Detektionsschicht umfassend beschichtete anorganische Nanopartikel, wobei die anorganischen Nanopartikel Liganden und/oder Dispergatoren aufweisen und mit einem organischen Halbleitermaterial beschichtet sind, wobei ein Gewichtsverhältnis von Nanopartikel zu Ligand und/oder Dispergator in der Detektionsschicht größer oder gleich 80:20 ist ...

Verfahren und Schaltungsanordnung zur Bestimmung einer Intensität von ionisierender Strahlung

Die Erfindung betrifft ein Verfahren zur Bestimmung der Intensität von ionisierender Strahlung mit einem Detektor (C3) mit einer Vielzahl von direktkonvertierenden Detektorelementen, insbesondere zur Verwendung in einem CT-System (C1), aufweisend die folgenden Verfahrensschritte: - Zuführen der Signalpulse zu einem Vorverstärker/Signalformer (2, 3), - Zuführen der verstärkten und formveränderten Signalpulse zu zwei parallel oder seriell geschalteten Pulshöhendiskriminatoren (4, 5), - Erfassen von einer Kombinationslogik (6) und - Weiterführen der erfassten Signalpulse zu einem Zähler (7). Die Erfindung zeichnet sich dadurch aus, dass eine Rückkopplung vorgesehen ist, welche in Abhängigkeit der Signalfrequenz einerseits die Pulsform der Signalpulse und andererseits die Taktfrequenz des getaktet arbeitenden Pulshöhendiskriminators (5) einstellt. Weiterhin betrifft die Erfindung eine Schaltungsanordnung zur Messung von Signalen eines direktkonvertierenden Detektors (C3), insbesondere zur Verwendung ...

Radiation detection

Radiation imaging control apparatus, radiation imaging system and radiation imaging apparatus, and method for controlling the same

Direct detection and imaging of charged particles from a radiopharmaceutical

Improvements in or relating to semi-conductor devices having variable electric characteristics

... 770,066. Semi-conductor devices. SIEMENSSCHUCKERTWERKE AKT.-GES. Oct. 20, 1954 [Oct. 20, 1953; April 24, 1954], No. 30283/54. Addition to 750,134. Drawings to Specification. Class 37. [Also in Group XL (b)] A semi-conductor device according to the parent Specification has a surface of the semiconductor subjected to radiation which provides a third means for controlling the currentvoltage characteristic of the device. The device, as described in the prior Specification, comprises an intrinsic semi-conductor body subjected to electric and magnetic fields at right angles to each other, thereby modifying the resistance of the semi-conductor body due to the production of a depleted region (the "magnetic barrier layer") having fewer electrons and holes than exist under thermal equilibrium conditions. The depleted region may be 10 cms. in thickness. In the present invention, radiation is applied to the depleted side of the body to generate electron-hole pairs therein which reduces the extent and ...

Cosmic ray detectors for integrated circuit chips

Photodetector for imaging system

A photodetector formed in a substrate includes a first active area 32 on a first surface of the substrate and a second active area 40 on a second surface of the substrate, wherein the photodetector is provided with a conductive via 58 electrically isolated from the substrate, said conductive via extending through the photodetector from the first surface of the substrate to the second surface of the substrate for connecting the first active area to the second surface of the substrate, the second surface providing electrical connections (70, 72, figure 2m) for the first and second active areas of the photodetector.

Tethered laparoscopic probe

Radiation imager comprising two data communication interfaces and two control units both capable of setting imager parameters

A radiation imaging control apparatus 101,102,121, and 120 and a method of use which is communicable with a radiation imaging apparatus 100 including a radiation sensor 105 and capable of acquiring an X-ray moving image, includes a first communication unit 120 configured to communicate with the radiation imaging apparatus via Ethernet communication 110, a second communication unit 101, 501 configured to communicate with the radiation imaging apparatus via at least a pair of bidirectional serial optical communication lines (optical fibers) (505, 506, figure 5), a first control unit 120 configured to cause the first communication unit to set at least one parameter signal to radiation imaging apparatus, a second control unit (501) configured to cause the second communication unit to output data of the X-ray moving image received from the radiation imaging apparatus to an image processing unit, and transmit a second signal for the same parameter settings to the radiation imaging apparatus.

Bump-bonded semiconductor imaging device

Thin film transistor array substrate for digital x-ray detector

Radiation detector

Improvements relating to solid state radiation detectors

... 1,025,111. Semi-conductor radiation detectors. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Jan. 21, 1963 [Feb. 2, 1962], No. 4145/62. Heading H1K. A method of manufacturing a PIN device comprises depositing a layer of lithium on the surface of a Group III-V semi-conductor, one of the elements of which has an atomic number greater than 32, heating the wafer to diffuse the lithium into the semi-conductor to form a PN-junction and then applying a reverse bias at a lower temperature to produce the required thickness of intrinsic region. The device produced has a wide intrinsic region and when reversely biased forms a gamma and X-ray detector. A circular wafer of P-type semiconductor has a circular patch of lithium evaporated on to its surface, and a layer of aluminium is evaporated on to the lithium to prevent surface oxidation. The wafer is then heated to 400‹ C. in a stream of argon to diffuse the lithium into the semi-conductor to form an N-type region. The device is encapsulated, as shown in ...

Solid state detector module structure and radiation imaging system

RADIATION DETECTOR

Detector

A semiconductor detector, for example cadmium zinc telluride (CZT) or cadmium manganese telluride (CMT) uses isolated regions of pixels, each region having pixels with different sensitive volumes than other regions, for example varying thickness, area or inter-pixel pitch. This may be used to determine exposure or dose over a large dynamic range or several orders of magnitude for high energy physics.

Detector amd method for detection of airborne beta particles

Method for measuring radiation by means of an electronic terminal having a digital camera

The invention relates to a method for operating an electronic terminal (1.1-1.4) comprising an integrated image sensor (2.1-2.4) that has a large number of pixels, in particular for a mobile telephone. According to the invention, a dosage value of ionising radiation striking the image sensor is determined by means of the image sensor (2.1-2.4). The invention further relates to a terminal that operates accordingly (e.g. a smart phone having a corresponding application program).

REALTIME RADIATION EXPOSURE MONITOR AND CONTROL APPARATUS

An apparatus for measuring radiation exposure in realtime by measuring the charge flowing in an external circuit when radiation creates electron hole pairs, and thus allows discharge of a duo-dielectric detector. The apparatus comprises a radiation source adapted to irradiate a multi-layered detector structure, an external circuit connected to the transparent insulating layer and to a conductive layer of the multi-layered detector structure, and a device for measuring the flow of current through this external circuit when the multi-layered detector structure is irradiated. This exposure measuring apparatus is unique in that it measures the voltage of the output electric signal as a function of the surface charge present at the spot where the radiation source strikes the photoconductive layer of the detector.

SYSTEMS AND METHODS FOR DIGITAL X-RAY IMAGING

Systems and methods for digital X-ray imaging are disclosed. An example portable X-ray scanner includes: an X-ray detector configured to generate digital images based on incident X-ray radiation; an X-ray tube configured to output X-ray radiation; a computing device configured to control the X-ray tube, receive the digital images from the X-ray detector, and output the digital images to a display device; a power supply configured to provide power to the X-ray tube, the X-ray detector, and the computing device; and a frame configured to: hold the X-ray detector, the computing device, and the power supply; and hold the X-ray tube such that the X-ray tube directs the X-ray radiation to the X-ray detector.

X-RAY AND GAMMA-RAY PHOTODIODE

A photodiode for use in detecting X-rays and/or gamma rays is disclosed. The photodiode comprises In Ga P arranged and configured to absorb X-rays and/or gamma- rays incident on the photodiode and generate charge-carriers in response thereto. The detector may be provided in an X-ray or gamma-ray photon counting spectrometer.

RADIOGRAPHY BACKSCATTER SHIELDS AND X-RAY IMAGING SYSTEMS INCLUDING BACKSCATTER SHIELDS

Radiography backscatter shields and X-ray imaging systems including backscatter shields are disclosed. An example X-ray backscatter shield includes: a conforming backscatter shield configured to provide shielding from Compton scatter radiation when placed in contact with an object to be scanned; and a shield frame configured to couple the backscatter shield to an X-ray source.

RADIATION DETECTOR INCLUDING FIELD EFFECT TRANSISTOR IN RESONANT CAVITY NANOSTRUCTURE

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

SYSTEMS AND METHODS FOR DETECTORS HAVING IMPROVED INTERNAL ELECTRICAL FIELDS

A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The cathode is mounted to the first surface, and the anode is mounted to the second surface. The semiconductor wafer is configured to be biased by a voltage between the cathode and the anode to generate an electrical field in the semiconductor wafer and to generate electrical signals responsive to absorbed radiation. The electrical field has an intensity having at least one local maximum disposed proximate to a corresponding at least one of the first surface or second surface.

METHOD FOR MEASURING RADIATION BY MEANS OF AN ELECTRONIC TERMINAL HAVING A DIGITAL CAMERA

The invention relates to a method for operating an electronic terminal (1.1-1.4) comprising an integrated image sensor (2.1-2.4) that has a large number of pixels, in particular for a mobile telephone. According to the invention, a dosage value of ionising radiation striking the image sensor is determined by means of the image sensor (2.1-2.4). The invention further relates to a terminal that operates accordingly (e.g. a smart phone having a corresponding application program).

RADIATION METER

A RADIATION DETECTION SYSTEM AND PROCESSES FOR PREPARING THE SAME

The invention provides a radiation detection system, comprising a continuous film of a wide band gap semiconductor, radiation-detecting, polycrystalline material formed from a multiplicity of crystalline grains, wherein the grains are sintered together to form a single, coherent, continuous film.

A RADIATION DETECTION SYSTEM AND PROCESSES FOR PREPARING THE SAME

The invention provides a radiation detection system, comprising a continuous film of a wide band gap semiconductor, radiation-detecting, polycrystalline material formed from a multiplicity of crystalline grains, wherein the grains are sintered together to form a single, coherent, continuous film.

BUMP-BONDED SEMICONDUCTOR IMAGING DEVICE

A semi-conductor imaging device, for use, for example, in medical diagnosis and non-destructive testing, includes a radiation detector semiconductor substrate (32) and a readout substrate (30) connected to the detector by means of low temperature solder bumps (34). A low temperature solder is preferably a lead-tin based solder having a melting point below that of eutectic lead-tin solder. Preferred embodiments of such low temperature solder include bismuth based alloys such as, for example, the eutectic (52 wt.% Bi, 32 wt.% Pb, 16 wt.% Sn) alloy which has a melting point under 100 ~C.

Verfahren zur Steuerung des Widerstandes einer Halbleiteranordnung, bei der der Halbleiterkörper eine magnetische Sperrschicht aufweist

Verfahren und Vorrichtung zur Messung physikalischer Eigenschaften von Röntgenstrahlen und y-Strahlen

Procédé et dispositif de prélèvement d'informations en temps sur un circuit de prélèvement d'informations en énergie

Verfahren für die Herstellung von pin-Übergangs-Festkörpervorrichtungen, eine nach diesem Verfahren hergestellte pin-Übergangs-Festkörpervorrichtung und eine Verwendung derselben

Verfahren zur Herstellung einer pin-Halbleitervorrichtung, nach diesem Verfahren hergestellte pin-Halbleitervorrichtung und Verwendung derselben

СИСТЕМА И СПОСОБ ОБНАРУЖЕНИЯ РАДИОАКТИВНЫХ МАТЕРИАЛОВ

Цифровые изображения, или заряд от пикселей в светочувствительных полупроводниковых устройствах формирования изображения могут быть использованы для детектирования гамма-излучения и частиц высокой энергии, испускаемых радиоактивными материалами. Заявляемые способы можно использовать для идентификации пиксельных шумов, введенных в цифровые изображения и видеоизображения гамма-излучением высокой энергии. Статистические тесты и иные сравнения в отношении шумов в изображениях или пикселях могут быть использованы с целью предотвращения ложноположительного детектирования гамма-излучения. Чувствительность системы можно использовать для детектирования радиоактивных материалов на расстоянии, превышающем 50 м. Усовершенствованные способы обработки обеспечивают градиентный поиск для определения более точного местонахождения источника, в то время как другие процессы могут быть использованы для идентификации конкретного изотопа. Координация различных устройств формирования изображений и аварийные сигналы ...

СИСТЕМА И СПОСОБ ОБНАРУЖЕНИЯ РАДИОАКТИВНЫХ МАТЕРИАЛОВ

Цифровые изображения или заряд от пикселей в светочувствительных полупроводниковых устройствах формирования изображения могут быть использованы для детектирования гамма-излучения и частиц высокой энергии, испускаемых радиоактивными материалами. Заявляемые способы можно использовать для идентификации пиксельных шумов, введенных в цифровые изображения и видеоизображения гамма-излучением высокой энергии. Статистические тесты и иные сравнения в отношении шумов в изображениях или пикселях могут быть использованы с целью предотвращения ложноположительного детектирования гамма-излучения. Чувствительность системы можно использовать для детектирования радиоактивных материалов на расстоянии, превышающем 50 м. Усовершенствованные способы обработки обеспечивают градиентный поиск для определения более точного местонахождения источника, в то время как другие процессы могут быть использованы для идентификации конкретного изотопа. Координация различных устройств формирования изображений и аварийные сигналы ...

DETECTOR X-RAY IMAGE, METHOD OF MANUFACTURING PHOTOSENSITIVE ELEMENT AND METHOD OF MANUFACTURING DETECTOR

For direct conversion x-ray detector of the polarization correction

Process and apparatus to determine the presence of certain elements in adjacent layers of ground to a well

NUCLEAR RADIATION DETECTION DEVICE UTILIZING DIAMOND DETECTOR WITH INJECTING AND BLOCKING CONTACTS

PROCESS OF CORRECTION OF THE BIPARAMETRIC SPECTRA

PROCESS AND RADIOLOGICAL DEVICE Of IMAGERY

Radioactive radiation sensor using solid-state detection - is fitted with multiple detectors to compensate for spectral sensitivity

DEVICE OF DETECTION OF IONIZING RAY HAS DETECTING SEMICONDUCTOR HAS SPECTROMETRIC ANSWER AMELIOREE

NUCLEAR RADIATION DETECTION DEVICE UTILIZING DIAMOND DETECTOR WITH INJECTING AND BLOCKING CONTACTS

IN SITU SYSTEM OF DIRECT MEASUREMENT OF THE ALPHA RADIATION AND PROCESS ASSOCIATES FOR THE QUANTIFICATION OF THE ACTIVITY OF THE TRANSMITTING RADIONUCLIDES ALPHA IN SOLUTION

Solid state radiation detector and its operation

Ce dispositif de mesure d'impulsions de rayonnement électromagnétique comporte un détecteur de rayonnement (4), des moyens (10) pour établir une tension de polarisation du détecteur de rayonnement, des moyens (12) pour mesurer les signaux délivrés par le détecteur (4), et il se caractérise en ce que les moyens pour établir une tension de polarisation sont des moyens générateurs d'impulsions. Les impulsions de tension de polarisation sont maintenues pendant au moins toute la durée d'au moins une impulsion de rayonnement par les moyens (10).

Device of imagery of great dimension

Le dispositif de l'invention comporte au moins un détecteur (2a , 2b ) plan apte à transformer un rayonnement (8) en charges électriques comportant une électrode commune (12) sur une face d'entrée et une mosaïque d'électrodes points (14) et des bandes métalliques (34a -34e ) sur une face de sortie; plusieurs puces de circuit intégré (10a, 10b) plan disposée en regard de la face d'entrée du détecteur et comportant une mosaïque du circuits de lectures (16) et des bandes métalliques (30a, 30d) pour connecter ces circuits à des dispositifs extérieurs d'alimentation, de commande et de traitement de signaux de sortie, chaque circuit de lecture étant hybridé par une microbille à une électrode point et les bandes de la puce étant disposées en regard des bandes du détecteur et hybridées à celles-ci par microbilles.

Detection of ionizing radiation, e.g. for medical imaging purposes using a semiconductor spectrographic detection system with anode, cathode and ASIC processing circuit in a single unit

L'invention concerne un système de détection spectrométrique comprenant un bloc (6) de matériau semi-conducteur, une cathode (7) fixée sur une première face du bloc de matériau semi-conducteur et une anode (8) fixée sur une deuxième face du bloc de matériau semi-conducteur, les première et deuxième faces étant à l'opposé l'une de l'autre. Le système de détection comprend un substrat (9) fixé sur l'anode (8) et au moins un circuit ASIC (10, 11) implanté dans le substrat, le circuit ASIC (10, 11) comprenant une électronique de traitement d'un signal issu bloc de matériau semi-conducteur. L'invention s'applique à tout domaine qui met en oeuvre la détection de rayonnements ionisants à l'aide de semi-conducteurs, par exemple l'imagerie médicale.

X-RAY DETECTOR AND MAKING METHOD OF X-RAY DETECTOR

엑스레이 검출기 및 엑스레이 검출기의 구동 방법

... 본 발명은 엑스레이 검출기 및 엑스레이 검출기의 구동 방법을 개시한다. 본 발명의 엑스레이 검출기의 각 광감지 픽셀은, 엑스레이 검출 구간에서, 조사된 엑스레이에 대응하는 전기적인 검출 신호를 생성하는 포토다이오드와, 상기 검출 신호를 외부로 전달하는 제1 스위칭 소자와, 휴지 구간에서, 상기 포토다이오드와 상기 제1 스위칭 소자가 연결된 노드로, 상기 포토다이오드의 양단이 등전위를 갖도록 하는 전압을 인가하는 제2 스위칭 소자와, 휴지 구간에서, 상기 노드로, 상기 포토다이오드의 양단이 일정한 전위차를 유지하도록 하는 전압을 인가하는 제3 스위칭 소자를 포함한다.

스퀘어클 형상의 디지털 평판 검출기

... 스퀘어클 형상을 가진 디지털 평판 검출기를 사용하여 X선 영상을 생성하기 위한 시스템 및 방법이 설명된다. 평판 X선 검출기는 회로 기판, 그 회로 기판에 전기적으로 접속된 광 영상기, 및 상기 광 영상기에 결합된 신틸레이터를 포함한다. 검출기는 초타원 형상, 또는 제1 실질적 직선 에지와 상기 제1 에지에 실질적으로 수직으로 동작하는 제2 실질적 직선 에지를 가진 코너없는 형상을 가지며, 여기서 상기 제1 에지와 상기 제2 에지는 물리적으로 90도로 서로 교차하지 않는다. 이러한 형상을 가진 평판 검출기는 x선을 검출하여 x선 영상을 생성하도록 검출기를 사용하는 x선 촬영 시스템에 사용될 수 있다. 이러한 형상에 있어서, 상기 검출기의 활성 감지 영역은 검출기를 제조하는데 더 적은 재료를 사용하면서 직사각형 또는 정사각형 평판 검출기로 현재 이용가능한 영역과 유사할 수 있다.

HIGH ENERGY, REAL TIME CAPABLE, DIRECT RADIATION CONVERSION X-RAY IMAGING SYSTEM FOR CD-TE AND CD-ZN-TE BASED CAMERAS

A calibrated real-time, high energy X-ray imaging system is disclosed which incorporates a direct radiation conversion, X-ray imaging camera and a high speed image processing module. The high energy imaging camera utilizes a Cd-Te or a Cd-Zn-Te direct conversion detector substrate. The image processor includes a software driven calibration module that uses an algorithm to analyze time dependent raw digital pixel data to provide a time related series of correction factors for each pixel in an image frame. Additionally, the image processor includes a high speed image frame processing module capable of generating image frames at frame readout rates of greater than ten frames per second to over 100 frames per second. The image processor can provide normalized image frames in real-time or can accumulate static frame data for substantially very long periods of time without the typical concomitant degradation of the signal-to-noise ratio. © KIPO & WIPO 2009 ...

방사선 검출기용 전자 전하 주입 회로

... 본 발명은 방사선 검출기용 전자 판독 회로에 관한 것으로, 그 전자 판독 회로는, 방사선 감응성 엘리먼트 (11), 감응성 엘리먼트 (11) 의 하나의 단자에 전하를 주입할 수 있는 주입 회로를 포함하고, 주입 회로 (14) 는 적어도 하나의 입력 단자와 하나의 출력 단자 사이에서 연장되고, 출력 단자는 상기 감응성 엘리먼트 (11) 에 연결될 수 있고, 주입 회로 (14) 는 트리거 펄스의 영향 하에서 전하를 생성할 수 있다. 주입 회로는 입력 단자가 제 1 입력 전위에 연결될 때에는 제 1 전하를 그리고 입력 단자가 제 2 입력 전위 (Vinj2, Phiinj) 에 연결될 때에는 제 2 전하를 주입할 수 있다. 이 회로는, 평형 전위라고 지칭되는, 주입 회로 (14) 의 출력 전위와 기준 전위 사이의 차이를 저장하여 제 2 전하가 제 2 입력 전위와 상기 평형 전위에 의존하도록 하는 수단을 포함한다.

X-선 검출기에서 개선된 검출 양자 효율을 위한 방법 및 장치

... 본 개시는 X-선 검출기들의 개선된 변조 전달 함수 및 검출 양자 효율을 위한 방법 및 장치를 개선하기 위한 방법 및 장치에 관한 것이다. 방법 및 장치는 마이크로 센서 엘리먼트들에 의해 획득된 마이크로엘리먼트 출력들을 디지털화하는 것 및 이러한 디지털화된 마이크로엘리먼트 출력들로부터 픽셀 출력들을 생성하는 것을 포함한다. 각각의 픽셀 출력은 복수의 가중 팩터화된 마이크로엘리먼트 출력들의 합산이다.

Radiation detecting element Method for manufacturing the same

DIGITAL X-RAY DETECTOR AND METHOD FOR DRIVING THE SAME

A NOVEL COMPOSITION FOR RADIATION IMAGING DETECTOR AND A RADIATION IMAGING DETECTOR COMPRISING THE SAME

X-RAY DETECTOR WITH AN OXIDE SEMICONDUCTOR TRANSISTOR, USING AN OXIDE SEMICONDUCTOR AS A CHANNEL

PURPOSE: An X-ray detector with an oxide semiconductor transistor is provided to improve aperture ratio in a pixel by using an oxide semiconductor channel. CONSTITUTION: In an X-ray detector with an oxide semiconductor transistor, a signal storage capacitor comprises a channel(132) made of an oxide semiconductor material which is serially formed on a substrate(102). A pixel electrode(111) is connected to the top electrode(122) of a capacitor. A photo conductor(110) is formed on the pixel electrode. A common electrode(114) is formed on the photo conductor. A first diffusion barrier layer(112) is formed between the photo conductor and the pixel electrode. A second diffusion barrier(113) is formed between the photo conductor and the common electrode. COPYRIGHT KIPO 2012 ...

METHOD FOR PRODUCTION OF A PELLET FOR A DIRECT-CONVERSION DETECTOR OF X-RAYS, DIRECT-CONVERSION DETECTOR OF X-RAYS AND DENTAL RADIOLOGY APPARATUS USING SUCH A DETECTOR

The present invention relates to a method for production of a pellet for a direct-conversion detector of X-rays. It also relates to a direct-conversion detector of X-rays using such a pellet and to a dental radiology apparatus using at least one such detector. The method for production of the pellet comprises a step of placing a powder of a semi-conductive polycrystalline material under a load (3, 4, 4a) and a step of heating (5-9) for a predetermined period of time. It comprises a prior step for bringing about an impurity level of at least 0.2% in the semi-conductive polycrystalline material.

APPARATUS AND METHOD FOR DETECTION OF RADIATION

Digital images or the charge from pixels in light sensitive semiconductor based imagers may be used to detect gamma rays and energetic particles emitted by radioactive materials. Methods may be used to identify pixel-scale artifacts introduced into digital images and video images by high energy gamma rays. Statistical tests and other comparisons on the artifacts in the images or pixels may be used to prevent false-positive detection of gamma rays. The sensitivity of the system may be used to detect radiological material at distances in excess of 50 meters. Advanced processing techniques allow for gradient searches to more accurately determine the source's location, while other acts may be used to identify the specific isotope. Coordination of different imagers and network alerts permit the system to separate non-radioactive objects from radioactive objects.

DETECTOR

The invention relates to a detector (6) for detecting radiation, especially x-ray radiation used in a computed tomography system. The detector comprises a direct conversion material(9) for converting radiation into electrons and holes, which are used for generating an electrical detection signal. The direct conversion material is illuminated with illumination light being broadband visible and/or broadband infrared light for reducing, in particular, eliminating, a polarization of the direct conversion material, which may occur when being traversed by the radiation to be detected and which may reduce the detection performance. By reducing the polarization of the direct conversion material the detection performance can be improved.

DIRECT CONVERSION X RAY DETECTOR

The invention relates to a radiation detector (100) comprising a converter element (102) for converting incident high-energy radiation (X) into charge signals. A cathode (101) and an array(104) of anodes (103) are disposed on different sides of the converter element(102) for generating an electrical field (E0, Ed) within it. The strength of said electrical field(E0, Ed) is increased in a first region(Rd) near the anode array(104) with respect to a second region(R0) remote from it. Such an increase may be achieved by doping the first region(Rd) with an electron acceptor. The increased field strength in the first region(Rd) favorably affects the sharpness of charge pulses generated by incident radiation.

METHOD AND APPARATUS FOR REVERSING PERFORMANCE DEGRADATION IN SEMI-CONDUCTOR DETECTORS

A system reverses degraded energy resolution of semiconductor radiation detection elements (44) which are used in a radiation detector assembly. A means (38) identifies semiconductor elements which exhibit degraded energy resolution as compared to an initial level of energy resolution after application of the forward bias. A means (40) restores the degraded semiconductor elements to the initial level of energy resolution by applying the reverse bias. A heater (74) accelerates the restoration process by supplying an elevated ambient temperature. A screening means (48) screens new semiconductor elements to identify the elements which are susceptible to degradation. A forward bias is applied by a forward bias means (50) to induce the degradation. A heater (52) increases an ambient temperature to accelerate the performance degradation in the new semiconductor. elements. The identified degradable elements are treated with a reverse bias prior to installation in the detector.

GAIN/LAG CHARGE TRAP ARTIFACT CORRECTION FOR X-RAY IMAGERS

A method is described. A total number of traps to be filled in a detector of an imaging system is estimated based on a measured signal sensed by the detector. The measured signal is adjusted based on the estimated total number of traps and a current trap state of the detector. The trap state of the detector is subsequently updated.

SWITCHING/DEPOLARIZING POWER SUPPLY FOR A RADIATION IMAGING DEVICE

A high voltage switching power supply (10) for an X-ray/Gamma ray imaging camera provides high voltage switching and depolarization capabilities. The power supply includes a high voltage polarity switching and an image detector charge bleeding circuit (90) and is particularly useful with high energy radiation imaging cameras utilizing Cd-Te based detector substrates, especially substrates with blocked contacts, where charge accumulation in the detector material reduces imaging efficiency.

METHOD AND DEVICE FOR MEASURING THE DOSE REQUIRED TO PRODUCE AN IMAGE WHEN TAKING A RADIATION IMAGE OF A SUBJECT

The invention relates to a method and device for measuring the dose required to produce an image during a process for taking a radiation image of a subject, especially an X-ray image. According to the invention, a radiation source is used to produce radiation, a solid-state radiation detector is provided for recording the image and a sensor is used to determine the dose required to produce said image. The sensor used is a semi-conductor-based radiation sensor. Said sensor is situated behind the solid-state radiation detector in relation to the direction of the radiation incident upon said solid-state radiation detector, and measures the radiation passing through the solid-state radiation detector. The sensor produces a signal which denotes the degree of radiation measured and the dose required for producing the image, said dose being produced in the area in front of the solid-state radiation detector.

Semiconductor gamma ray detector element configuration of axially series multi-chamber structure for improving detector depletion plan

A High Purity Germanium (HPGe) radiation detector has been specially machined to be this invented series multi-chamber coaxial configuration. So extra-large volume HPGe detectors can be easily produced with current available HPGe crystal, and the entire detector body structure can be uniquely optimized in accordance with the exact semiconductor crystal ingot situation so the overall detector can be easier depleted and the photo-induced carriers can be better collected as the signal output. This invention makes extra-large efficiency HPGe gamma ray detectors of 100% to 200%, and maybe even higher efficiency, possible and easier to be produced based on current HPGe crystal supply capability. The invention improves the detector performance for very high energy gamma ray detection especially. The invention could also be applied to any other kind of semiconductor materials if any of them could be purified enough for this application in future.

Radiation detector and radiographic imaging apparatus

A radiation detector includes: a sensor substrate including a flexible base material and a layer which is provided on a first surface of the base material and in which plural pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed; a conversion layer that is provided on the first surface side of the sensor substrate to convert radiation into the light; and a protective film that covers a portion ranging from an opposite surface of the conversion layer opposite to a side where the sensor substrate is provided, to a corresponding position, corresponding to a position of an end part of the conversion layer, on a second surface opposite to the first surface of the base material.

Pixelated scintillator with optimized efficiency

A method for fabricating a pixelated scintillator including providing a pixelated scintillator-structure and a connection-structure in such a way that the connection-structure is in mechanical contact with two adjacent pixels of the pixelated scintillator-structure. Moreover, the pixelated scintillator-structure includes a first sintering-shrinking-coefficient and the connection-structure includes a second sintering-shrinking-coefficient that is greater than the first sintering-shrinking-coefficient. Further, the pixelated scintillator-structure and the connection-structure are sintered such that a gap between two adjacent pixels of the pixelated scintillator-structure is reduced.

X-ray radiation detector for detecting ionizing radiation, in particular for use in a CT system

An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured ...

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

X-ray data processing apparatus and method and program for the same

The X-ray data processing apparatus to estimate a true value from an X-ray count value detected by the pixel array X-ray detector of a photon counting system includes a management unit 210 to receive and manage a detection value for each detection part, an effective area ratio calculation unit 230 to calculate a ratio of a detection ability under the influence of the charge share to an original detection ability in the detection part as an effective area ratio of the detection part using data regarding the detection part and data regarding an X-ray source and a detection energy threshold value, and a correction unit 250 to correct the managed count value using the calculated effective area ratio to estimate a true value.

DETECTION DEVICE, DETECTION SYSTEM, AND METHOD OF MANUFACTURING DETECTION DEVICE

A detection device includes conversion elements, each including a first electrode disposed on a substrate, a semiconductor layer disposed on the first electrode, an impurity semiconductor layer disposed on the semiconductor layer and including at least a first region and a second region, and a second electrode disposed on the first region of the impurity semiconductor layer in contact with the impurity semiconductor layer. Sheet resistance in the second region disposed at a position where the impurity semiconductor layer is not contacted with the second electrode is less than sheet resistance in the first region. 1. A detection device including conversion elements each comprising:a first electrode disposed on a substrate;a semiconductor layer disposed on the first electrode;an impurity semiconductor layer disposed on the semiconductor layer and including at least a first region and a second region; anda second electrode disposed on the first region of the impurity semiconductor layer in contact with the impurity semiconductor layer,wherein a sheet resistance in the second region disposed at a position where the impurity semiconductor layer is not contacted with the second electrode is less than a sheet resistance in the first region.2. The detection device according to claim 1 , wherein the second region has a greater thickness than the first region.3. The detection device according to claim 2 , wherein the second region consists of plural impurity semiconductor layers stacked one above another.4. The detection device according to claim 1 , wherein the second region has a greater impurity concentration than the first region.5. The detection device according to claim 1 , further including a plurality of pixels disposed on the substrate claim 1 , each of the pixels comprising the conversion element and a thin-film transistor connected to the first electrode; anda first interlayer insulating layer disposed to cover the thin-film transistor and having a contact hole ...

METHODS FOR THE SYNTHESIS, PURIFICATION AND CRYSTAL GROWTH OF INORGANIC CRYSTALS FOR HARD RADIATION DETECTORS

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

RADIATION DETECTOR UBM ELECTRODE STRUCTURE BODY, RADIATION DETECTOR, AND METHOD OF MANUFACTURING SAME

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

Use of surface patterning for fabricating a single die direct capture dental X-ray imaging sensor

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

HIGH RESOLUTION DYNAMIC DETECTOR FOR IMAGING AND DOSIMETRY IN MEGAVOLTAGE RADIATION THERAPY

Disclosed herein are variations of megavoltage (MV) detectors that may be used for acquiring high resolution dynamic images and dose measurements in patients. One variation of a MV detector comprises a scintillating optical fiber plate, a photodiode array configured to receive light data from the optical fibers, and readout electronics. In some variations, the scintillating optical fiber plate comprises one or more fibers that are focused to the radiation source. The diameters of the fibers may be smaller than the pixels of the photodiode array. In some variations, the fiber diameter is on the order of about 2 to about 100 times smaller than the width of a photodiode array pixel, e.g., about 20 times smaller. Also disclosed herein are methods of manufacturing a focused scintillating fiber optic plate.

IONIZING RADIATION DETECTION.

GAIN/LAG ARTIFACT CORRECTION ALGORITHM AND SOFTWARE

Radiation meter

PHOTOELECTRIC DETECTION CIRCUIT AND PHOTOELECTRIC DETECTOR

Radiographic imaging system

A response with a wider dynamic range is obtained without a need for irradiating strong radiation onto a subject (human body). A CCD controller 22 allows reading of imaging signals from CCD image sensors 1 to 12, which is performed twice during different time periods, once during a long exposure time period and once during a short exposure time period, with respect to the irradiation of a constant dose of radiation by an X-ray generator 25; and a main controller 26 allows a memory 24 to synthesize image data from the successively twice-read imaging signals into an image with proper timing. As a result, it becomes unnecessary to irradiate strong radiation onto a subject, such as a human body and other substances, as is done conventionally, owing to a radiation dose weak enough not to cause a harmful influence.

Detection apparatus and radiation detection system

A stacked-type detection apparatus includes a plurality of pixels arranged in a matrix having row and column directions. Each pixel includes a conversion element configured to convert radiation or light into an electric charge, and a switch element configured to output an electric signal corresponding to the electric charge. A driving line is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. In each pixel, the conversion element is disposed above the switch element. The signal line is formed by a conductive layer embedded in an insulating layer located below an uppermost surface portion of a main electrode of the switch element located below an uppermost surface portion of the driving line located below the conversion element.

Apparatus and method for detecting radiation

An apparatus and method for detecting radiation are provided. The apparatus includes an upper electrode layer transmitting radiation; a first insulating layer blocking charges from the upper electrode layer; a photoconductive layer becoming photoconductive upon exposure to the radiation; a second insulating layer protecting the photoconductive layer from a plasma discharge; a lower substrate facing the second insulating layer; a plurality of barrier ribs defining a cell structure between the second insulating layer and the lower substrate; a gas layer included in an inner chamber inside the cell structure and generating a plasma discharge; a bottom electrode formed on the lower substrate; a first radio frequency (RF) electrode formed over the bottom electrode and connected to a ground source; a second RF electrode to which RF power for generating plasma is applied; and a third insulating layer surrounding the first and second RF electrodes and thus insulating the first and second RF electrodes from the gas layer and the bottom electrode.

Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus

According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

Radiation imaging apparatus

Provided is a radiation imaging apparatus capable of housing a radiation detection unit configured to detect radiation. The radiation imaging apparatus includes a first cooling unit configured to cool a first heat generation portion of the radiation detection unit housed in the radiation imaging apparatus by a cooling medium in the radiation imaging apparatus, a second cooling unit configured to cool a second heat generation portion of the radiation detection unit housed in the radiation imaging unit, which is larger in amount of generated heat than the first heat generation portion, by the cooling medium, and a discharge port formed in a position nearer to the second heat generation portion than to the first heat generation portion and configured to discharge the cooling medium.

X-ray detector and method of driving the same

An X-ray detector and a method of driving the X-ray detector, which accurately compensate for an image lag of an X-ray scanning by using an X-ray image and a dark image, are provided. A stand-by time for the X-ray scanning may be reduced by increasing the accuracy of the image lag compensation.

Imaging measurement system with a printed photodetector array

Low cost large area photodetector arrays are provided. In a first embodiment, the photodetectors comprise an inorganic photoelectric conversion material formed in a single thick layer of material. In a second embodiment, the photodetectors comprise a lamination of several thin layers of an inorganic photoelectric conversion material, the combined thickness of which is large enough to absorb incoming x-rays with a high detector quantum efficiency. In a third embodiment, the photodetectors comprise a lamination of several layers of inorganic or organic photoelectric conversion material, wherein each layer has a composite scintillator coating.

Cassette type radiographic image solid-state detector

A cassette type radiographic image solid-state detector includes: a detector unit having a scintillator for converting incident radiation into light and a detection section which receives and converts the light converted by the scintillator into electric signals; and a housing containing the detector unit, the housing having a rectangular tubular housing body which has openings at both ends and is formed in a rectangular tube shape using carbon fiber, and a first cover member and a second cover member for covering the openings of the rectangular tubular housing body, wherein a wall of the rectangular tubular housing body facing to a direction perpendicular to an incident direction of radiation is thicker than a wall of the rectangular tubular housing body facing to the incident direction of radiation.

X-ray detector

An X-ray detector is connected to a large number of detector modules connected in series. The X-ray detector detects X-ray image data for each detection module, each module synchronously reading X-ray image data detected by itself based on an internal clock φ, each module transferring the read X-ray image data one after another. Each of the detection modules receives the transferred X-ray image data, and resynchronizes the received X-ray image data by using the internal clock, and transfers the same together with the detected X-ray image data. This enables arranging the detection module at an arbitrary position without a change in the method of transferring data for each measurement or without a load on a control device.

Overlapping detector elements of a radiographic detector array

One or more techniques and/or systems described herein provide for creating detector elements that are configured to be overlaid, such that at least a portion of gap between two detector elements is situated in a plane that is not parallel to a plane through which primary radiation travels. That is, a first detector element comprises a portion that is configured to overlap a portion of a second detector element. The detector element(s) may be direct conversion or indirect conversion detector elements. Moreover, one or more electrodes may be placed within the gap and/or along an edge of the detector element to assist in the movement of charge generated by a charge producing portion of the detector element.

Direct Radiation Converter, Radiation Detector, Medical Apparatus And Method For Producing A Direct Radiation Converter

A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.

Radiation detector

A radiation detector of this invention has a barrier layer on the upper surface of a high resistance film along the outer edge of a common electrode, which enables prevention of a chemical reaction between an amorphous semiconductor layer and a curable synthetic resin. The barrier layer is adhesive to the curable synthetic resin film, and this can prevent strength being insufficient, such that temperature changes cause separation in interfaces between the barrier layer and curable synthetic resin film, thereby reducing the effect of inhibiting warpage and cracking. The material for the barrier layer is an insulating material not including a substance that would chemically react with the amorphous semiconductor layer. This can prevent components of the material for the barrier layer from chemically reacting with the semiconductor layer. Consequently, creeping discharge at the outer edge of the common electrode where electric fields concentrate can be prevented.

X-Ray Detector And Medical X-Ray Device

An X-ray detector having an active array comprising pixel elements for detecting X-ray radiation is provided to enable high-quality X-ray imaging, wherein each pixel element has a scintillator layer for converting X-ray radiation into light and a photodiode produced by means of CMOS technology for converting light into a measurable electrical signal, and wherein the pixel elements are arranged on a silicon substrate and a BOX (buried oxide) layer is sandwiched between the silicon substrate and the photodiode.

Energy Correction for One-To-One Coupled Radiation Detectors Having Non-Linear Sensors

Systems and methods for correcting output signals from non-linear photosensors, specifically silicon photomultipliers (SiPMs). SiPMs are used in a PET detector to readout light emissions from LSO scintillator crystals. The non-linear output of the SiPM can distort and compress the energy spectrum which is crucial in PET imaging. The non-linearity effect for inter-crystal scattered events can place an energy event outside of the PET detector energy window, resulting in a rejected event. Systems and methods to correct the SiPM non-linearity for inter-crystal scattered events, so as to be able to obtain the proper energy event and produce an accurate medical image, are disclosed.

Providing Variable Cell Density and Sizes in a Radiation Detector

An apparatus and method to decrease light saturation in a photosensor array and increase detection efficiency uses a light distribution profile from a scintillator-photodetector geometry to configure the photosensor array to have a non-uniform sensor cell pattern, with varying cell density and/or varying cell size and shape. A solid-state photosensor such as a SiPM sensor having such a non-uniform cell structure realizes improved energy resolution, higher efficiency and increased signal linearity. In addition the non-uniform sensor cell array can have improved timing resolution due to improvements in statistical fluctuations. A particular embodiment for such photosensors is in PET medical imaging.

X-ray computed tomography apparatus and radiation detector

According to one embodiment, an X-ray computed tomography apparatus includes an X-ray tube, a detector, a first DAS, and a second DAS. The radiation detector includes a plurality of detection elements. Each detection element repeatedly detects X-rays generated by the X-ray tube and transmitted through a subject and repeatedly generates an electrical signal corresponding to the energy of the repeatedly detected X-rays. The first DAS acquires the electrical signal detected by part of the imaging region of each detection element in the integral mode. The second DAS acquires the electrical signal detected by the other part of the imaging region of each detection element in the photon count type mode.

Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication

A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

Direct conversion x-ray detector with radiation protection for electronics

The present invention relates to an X-ray detector having an X-ray sensor (first X-ray sensor) converting X-radiation directly into electric charge carriers, having signal evaluation electronics electrically connected to the X-ray sensor and preferably formed as integrated circuit(s), having an X-ray absorber formed for protecting the signal evaluation electronics, and having a sensor carrier (first sensor carrier) formed and arranged for positioning the X-ray sensor relative to the X-ray absorber, wherein, viewed in the direction of incidence of the X-radiation, both the signal evaluation electronics are arranged behind the X-ray absorber and in the X-radiation shadow thereof and the X-ray sensor is admittedly likewise positioned by means of the sensor carrier preferably arranged between the X-ray absorber and the signal evaluation electronics at least sectionally behind the X-ray absorber, but outside the X-radiation shadow thereof.

Control device for radiation imaging apparatus and control method therefor

A control device that controls a sensor capable of changing a magnitude of an accumulation capacitance of an electric charge for each pixel includes an acquisition unit configured to acquire an output value according to an accumulated electric charge of each pixel of the sensor, a determination unit configured to determine whether the accumulation capacitance of each pixel is saturated based on the output value, and a setting unit configured to set magnitude of the accumulation capacitance for each pixel according to the determined accumulation capacitance.

RADIOGRAPHIC IMAGING DEVICE

The present invention provides a radiographic imaging device that may image radiographic images with high sharpness while suppressing a drop in sensitivity. Namely, a radiation detector, in which a scintillator that generates light due to irradiation of radiation and a TFT substrate on which plural sensor portions configured including an organic photoelectric conversion material that generates electric charges by receiving light are disposed are sequentially layered, is positioned in such a way that radiation that has passed through a subject is made incident from the TFT substrate side. 1. A radiographic imaging device comprising: a radiation detector , in which a light-emitting layer that generates light due to irradiation of radiation and a substrate on which plural sensor portions configured including an organic photoelectric conversion material that generates electric charges by receiving light are disposed and are sequentially layered , with the radiation detector being positioned so that radiation that has passed through a subject is made incident from the substrate side.2. The radiographic imaging device according to claim 1 , wherein the substrate is configured by any of plastic resin claim 1 , an aramid claim 1 , bio-nanofibers claim 1 , or a flexible glass substrate.3. The radiographic imaging device according to claim 1 , wherein thin-film transistors claim 1 , that are configured including an amorphous oxide in their active layers and that read out the electric charges generated in the sensor portions claim 1 , are formed on the substrate in correspondence to the sensor portions.4. The radiographic imaging device according to claim 1 , wherein the substrate is adhered to an imaging region within a casing claim 1 , to which the radiation that has passed through the subject is irradiated.5. The radiographic imaging device according to claim 1 , whereinthe light-emitting layer is configured including CsI columnar crystals, andthe organic photoelectric ...

Detector modules and methods of manufacturing

Detector modules and methods of manufacturing are provided. One detector module includes a detector having a silicon wafer structure formed from a first layer having a first resistivity and a second layer having a second resistivity, wherein the first resistivity is greater than the second resistivity. The detector further includes a photosensor device provided with the first layer on a first side of the silicon wafer and one or more readout electronics provided with the second layer on a second side of the silicon wafer, with the first side being a different side than the second side.

Scintillation detection device with pressure sensitive adhesive interfaces

A scintillator device includes an optically clear substrate, a scintillator plastic layer overlying the optically clear substrate, and an optically clear polymer layer between the optically clear substrate and the scintillator plastic layer. The optically clear polymer layer can mechanically and optically couple the scintillator plastic layer to the optically clear substrate. Further, the clear polymer layer can be configured to substantially reduce the formation of cracks in the scintillator plastic layer due to thermal expansion, thermal contraction, or a combination thereof, of the scintillator device.

DETECTOR FOR USE IN A CHARGED PARTICLE APPARATUS

A detector with a Silicon Diode and an amplifier, and a feedback element in the form of, for example, a resistor or a diode, switchably connected to the output of the amplifier. When the feedback element is selected via a switch, the detector operates in a Current Measurement Mode for determining electron current, and when the element is not selected the detector operates in its well-known Pulse Height Measurement Mode for determining the energy of X-ray quanta. 1. A Radiation detector for detecting X-rays , the detector comprising a Silicon Drift Diode , the Silicon Drift Diode showing an anode and an output , the Silicon Drift Diode in working producing a pulse on the output in response to a single detected photon , the output connected to electronic circuitry for measuring the output signal ,characterized in thatthe Silicon Drift Diode comprises a voltage/current converter between an I/O port and the anode, the detector equipped to selectively connect the voltage/current convertor in an analog feed-back loop via a switch, as a result of which the Silicon Drift Diode is equipped to switchably operate in a pulse height measurement mode or a current measurement mode.2. The radiation detector of in which the voltage/current convertor is a resistor claim 1 , as a result of which the current measurement mode is a linear current measurement mode.3. The radiation detector of in which the voltage/current detector is a diode claim 1 , as a result of which the current measurement mode is a logarithmic current measurement mode.4. The radiation detector of claim 1 , the Silicon Drift Diode showing a surface sensitive to radiation claim 1 , the sensitive surface opposite to the surface on which the anode is formed claim 1 , and the SDD shows an active volume close to the sensitive surface claim 1 , the distance of the active volume to the sensitive surface sufficiently small for electrons with an energy of 20 keV claim 1 , more specifically 2 keV claim 1 , most specifically ...

Radiation detector

Provided is a radiation detector 1 capable of improving reliability associated with radiation detection. The radiation detector 1 includes: a supporting substrate 2 that can transmit radiation there-through; a scintillator layer 3 formed on one principal surface 2 a of the supporting substrate 2 , the scintillator layer 3 including an incident surface 3 a on which radiation is incident and an emission surface 3 b emitting light generated by the incident radiation and on a side opposite to the incident surface 3 a ; and a light detection portion 5 disposed on an emission surface side of the scintillator layer 3 for detecting light emitted from the emission surface 3 b.

Radiation Image Detector and Method of Driving the Same

In one embodiment, the radiation image detector includes: a radiation sensor, which includes an image detection unit in which a plurality of pixels a reading circuit, which reads image signal information from a group of pixels that are connected to an arbitrary row select line to which a drive voltage is applied, and also reads noise signal information from pixels when the drive voltage is not applied to all the row select lines; and a noise correction circuit, which corrects the image signal information on the basis of the noise signal information.

SEMICONDUCTOR X-RAY DETECTOR

A semiconductor X-ray detector comprises: a semiconductor X-ray sensor portion , which has a plate-like outer shape including an opening portion near to a central portion thereof, and is formed with plural numbers of pixel-like X-ray sensors between a surface and a reverse surface thereof; and a read-out portion , which is disposed on the reverse surface of the semiconductor X-ray sensor portion, and executes a predetermined process on each of signals outputted from the plural numbers of the X-ray sensors building up the semiconductor X-ray sensor portion, thereby outputting detected signals therefrom. The read-out portion is built up by assembling read-out units in plural numbers thereof, flatly in one body, each being formed into a rectangular shape, respectively, and forming plural numbers of pads on a surface thereof, as well as, having plural numbers of processing circuit portions and plural numbers of through hole vias in an inside thereof, and further having plural numbers of pads on a reverse surface thereof. The semiconductor X-ray sensor portion and the read-out portion are laminated to form into one body. 1. A semiconductor X-ray detector , comprising:a semiconductor X-ray sensor portion, which has a plate-like outer shape including at least an opening portion near to a central portion thereof, and is formed with plural numbers of pixel-like X-ray sensors between a surface and a reverse surface thereof; anda read-out portion, which is disposed on the reverse surface of said semiconductor X-ray sensor portion, and executes a predetermined process on each of signals outputted from the plural numbers of said X-ray sensors building up said semiconductor X-ray sensor portion, thereby outputting detected signals therefrom, whereinsaid read-out portion is built up by assembling read-out units in plural numbers thereof, flatly in one body, each being formed into a plate-like rectangular shape, with forming plural numbers of input portions on a surface thereof, as ...

ARRAY OF VIRTUAL FRISCH-GRID DETECTORS WITH COMMON CATHODE AND REDUCED LENGTH OF SHIELDING ELECTRODES

A novel radiation detector system is disclosed that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration. 2. A virtual Frisch-grid detector array according to claim 1 , wherein the plurality of virtual Frisch-detectors in the edge module comprise the shielding electrode extending a less than ⅓ length of a semiconductor placed near the anode edge.3. A virtual Frisch-grid detector array according to claim 1 , further comprises a side insulating layer between the side surface of the semiconductor and the shielding electrode producing the virtual Frisch-grid effect.4. A virtual Frisch-grid detector array according to claim 1 , wherein the cathodes of the detectors in the array are connected together.5. A virtual Frisch-grid detector array according to claim 1 , wherein the aspect ratio of the semiconductor is at least about 2.6. A virtual Frisch-grid detector array according to claim 1 , wherein the shielding electrode in the detectors of the internal module extends about ⅓ of the total length of the semiconductor.7. A virtual Frisch-grid detector array according to claim 6 , wherein the shielding electrode is made from conducting metals.8. A virtual Frisch-grid detector array according to claim 7 , wherein the conducting metals is selected from copper (Cu) or aluminum (Al).9. A virtual Frisch-grid detector array according to claim 1 , wherein interaction depth information derived from the cathode signal of the internal module is used to correct the anode's charge loss due to electron trapping of the array.10. A virtual Frisch-grid detector array according to claim 1 , wherein the ratio between the cathode and an anode signals is used to reject the events interacting close to the anode.11. A virtual Frisch-grid detector array according to claim 1 , wherein the semiconductor is selected from the group consisting of Group III-V semiconductors and Group II-VI semiconductors.12. A virtual ...

RADIATION DETECTOR, RADIOGRAPHIC IMAGING DEVICE, AND RADIOGRAPHIC IMAGING SYSTEM

The present invention provides radiation detector, radiographic imaging device and radiographic imaging system that may detect irradiated radiation while maintaining quality of radiographic image. The radiation detector has: pixels having a sensor portion that generates charges in accordance with light converted from irradiated radiation, TFT switch that outputs, to a signal line, charges read-out from the sensor portion, and radiation detection TFT switch that is not connected to a signal line; and radiation detection pixels that have the sensor portion, the TFT switch, and radiation detection TFT switch that is connected to a signal line and that outputs, to the signal line, charges read-out from the sensor portion. The radiation detection TFT switches are connected to radiation detection scan lines, and ON/OFF states are controlled by scan signals that are outputted from a radiation detection control circuit. 1. A radiation detector comprising: a first sensor portion that generates charges in accordance with irradiated radiation, and', 'a first switching element that reads-out the charges generated at the first sensor portion and outputs the charges to a signal line;, 'a plurality of first pixels including,'} a second sensor portion that generates charges in accordance with irradiated radiation,', 'a second switching element that reads-out the charges generated at the second sensor portion and outputs the charges to a signal line, and', 'a radiation detection switching element that reads-out the charges generated at the second sensor portion and outputs the charges to a signal line;, 'a plurality of second pixels including,'}a plurality of scan lines that are formed from at least one of a scan line group formed from scan lines to which control terminals of the first switching elements are connected and through which control signals that switch the first switching elements flow, and scan lines to which control terminals of the second switching elements are ...

Portable radiation detection unit

A portable radiation detection unit comprises a radiation detection panel that detects radiation and a housing that contains the radiation detection panel, wherein the housing comprises a first housing portion, which includes at least one sidewall, and a second housing portion, which is independent from the first housing portion, and by using a configuration in which the first housing portion is movable with respect to the second housing portion, a distance between the sidewall of the first housing portion and an end portion of the radiation detection panel provided in the second housing portion is variable.

Radiation image capture device and radiation image capture system

In a radiation detector ( 60 ), pixels with sensor portions ( 72 ) that generate electrical charges when irradiated with radiation or light converted from radiation are plurally arrayed two-dimensionally in an imaging region that captures a radiation image, and the radiation detector ( 60 ) outputs the electrical charges accumulated in the pixels as electrical signals. A radiation detection section ( 62 ), in which sensor portions ( 146 ) capable of detecting the radiation or light to which radiation is converted are plurally provided, is provided layered over the imaging region of the radiation detector ( 60 ). Thus, a radiation image capture device and radiation image capture system capable of detecting radiation within an imaging region without complicating the structure of an imaging section that captures radiation images are provided.

Alpha-particle detection device

A device for detecting alpha-particles, like those emanating from radon. The device includes an electronic circuit ( 100 ) having a detection/conversion cell ( 102 ) with a forward-biased diode (D) with its n-type layer grounded and the input of which is electrically connected to the p-type layer of the diode (D). The cell is designed to recover the charge emitted by the diode (D) and to convert this charge into a representative voltage constituting a dosage signal. The device further includes a comparison circuit ( 160 ) designed to compare the level of the dosage signal with a threshold level, and a control circuit ( 170 ) to control a protection device in response to the level of the voltage (V) exceeding the threshold value.

ELECTRON MULTIPLIER DETECTOR FORMED FROM A HIGHLY DOPED NANODIAMOND LAYER

A system for detecting electromagnetic radiation or an ion flow, including an input device for receiving the electronic radiation or the ion flow and emitting primary electrons in response, a multiplier of electrons in transmission, for receiving the primary electrons and emitting secondary electrons in response, and an output device for receiving the secondary electrons and emitting an output signal in response. The electron multiplier includes at least one nanocrystalline diamond layer doped with boron in a concentration of higher than 5·10cm. 116-. (canceled)17. A system for detecting an electromagnetic radiation or an ion flow , comprising:an input device, for receiving the radiation or an ion flow and emitting primary electrons in response;a multiplier of electrons in transmission for receiving the primary electrons and emitting secondary electrons in response; andan output device, for receiving the secondary electrons and emitting an output signal in response,{'sup': 19', '−3, 'wherein the electron multiplier comprises at least one nanocrystalline diamond layer doped with boron in a concentration of higher than 5·10cm.'}18. A detection system according to claim 17 , wherein the nanocrystalline diamond layer has a boron doping concentration higher than 2·10cm.19. A detection system according to claim 17 , wherein the thickness of the nanocrystalline diamond layer is between 0.1 μm and 10 μm.20. A detection system according to claim 17 , wherein the nanocrystalline diamond layer is formed by chemical vapour deposition.21. A detection system according to claim 17 , wherein the nanocrystalline diamond layer comprises an upstream face for receiving incident electrons claim 17 , and a downstream face for emitting secondary electrons in response claim 17 , the upstream face comprising a hole collection electrode configured to be taken to an electrical potential.22. A detection system according to claim 21 , wherein the collection electrode is situated at an edge of ...

X-ray imaging apparatus

An X-ray imaging apparatus that performs X-ray radiographing by detecting X-rays that have transmitted through an object with an X-ray sensor includes an acquisition unit configured to acquire a first predetermined time based on operational information of the X-ray sensor, and a control unit configured to alter a drive of the X-ray sensor based on whether the first predetermined time has elapsed after bias voltage is applied on the X-ray sensor after X-ray radiographing is performed by the X-ray sensor.

RADIATION DETECTOR WITH STEERING ELECTRODES

The invention relates to a radiation detector () and an associated method for the detection of (e.g. X or γ-) radiation. The detector () comprises a converter element () in which incident photons (X) are converted into electrical signals, and an array of anodes () for generating an electrical field (E) in the converter element (). At least two anodes are associated with two steering electrodes () to which different potentials can be applied by a control unit (). Preferably, each single anode or small group of anodes is surrounded by one steering electrode. The potentials of the steering electrodes () may be set as a function of the potentials that are induced in these electrodes when an operating voltage is applied between the anodes and a cathode (). Moreover, a grid electrode () may be provided that at least partially encircles anodes () and their steering electrodes (). 1. A radiation detector , comprising:a) a converter element for converting incident radiation into electrical signals;b) a periodic or quasi-periodic array of anodes disposed on a first side of the converter element;c) at least two steeling electrodes that are disposed adjacent to two different anodes;d) a control unit that is connected to the at least two steering electrodes and adapted to apply different electrical potentials to the at least two steering electrodes wherein said potentials are a function of the open-circuit voltages that result between a steering electrode and the associated anode, when a voltage is applied between the associated anodes and a cathode.2. The radiation detector according to claim 1 ,wherein at least one of the steering electrodes surrounds the adjacent anode.3. The radiation detector according to claim 1 ,wherein the anode is disposed off-centre with respect to the steering electrode.4. The radiation detector according to claim 1 ,wherein at least one steering electrode is disposed adjacent to two or more anodes.5. The radiation detector according to claim 1 , ...

IONIZING RADIATION DETECTION DEVICE WITH A SEMI-CONDUCTOR DETECTOR HAVING AND IMPROVED SPECTROMETRIC RESPONSE

This invention relates to an ionizing radiation detection device including a detector () of semi-conductor material intended to be biased thanks to electrodes (), among which reading electrodes () connected to a reading circuit () process signals they provide to reject those causing a poor spectrometric response, that is those affected by an induction share and possibly those affected by a charge or electronic noise share. 1. An ionizing radiation detection device comprising a detector of semi-conductor material to be biased with electrodes , including reading electrodes capable of collecting charges created in the detector during an interaction between the ionizing radiation and the semi-conductor material of the detector and which are connected to a reading circuit including:first processing means capable of providing a pulse when a charge has been collected by one of the reading electrodes, the pulse being formed with respect to a baseline,second means for processing the pulse provided by the first processing means including:means for determining a parameter comprising a time parameter of the pulse or an amplitude value of the pulse after a baseline crossing between the start and the end of the pulse,means for rejecting the pulse depending on the value of said parameter and for preserving the pulse if it is not rejected,means for operating the pulse preserved by the rejecting means.2. The detection device according to claim 1 , wherein the parameter is a time parameter selected from the rise time of the pulse claim 1 , the time elapsed between the start of the pulse and the first baseline crossing of the pulse.3. The detection device according to claim 1 , wherein the amplitude value of the pulse after a baseline crossing between the start and the end of the pulse is the minimum of the pulse.4. The detection device according to claim 1 , wherein claim 1 , when the pulse is analogue claim 1 , the time parameter corresponds to the duration during which the analogue ...

Radiographic image capture device, method and program storage medium

A radiographic image capture device includes a radiation detector and a determination section. The radiation detector includes a first sensor for radiographic image capture and a second sensor for radiation detection. The determination section determines whether or not radiation has been detected by the radiation detector based on a ratio of a first value obtained by the first sensor to a second value obtained by the second sensor.

IMAGING APPARATUS, X-RAY DETECTOR, AND IMAGING METHOD

An imaging apparatus includes a sensor including a plurality of pixels arranged in a two-dimensional pattern, a sample-hold unit configured to sample and hold a signal obtained from each pixel, and a reading unit configured to perform scanning in such a way as to perform a plurality of non-destructive reading operations for pixels of one row and as to read pixels of the next row, and to subsequently perform scanning in a row direction and a column direction to read the signal having been sampled and held by the sample-hold unit, an A/D conversion unit configured to perform analog/digital conversion processing on the signal read by the reading unit, an averaging processing unit configured to perform averaging processing on the signal converted by the A/D conversion unit, for each pixel, and a digital binning unit configured to perform binning processing using the signal processed by the averaging processing unit. 1. An imaging apparatus , comprising:a sensor including a plurality of pixels arranged in a two-dimensional pattern, a sample-hold unit configured to sample and hold a signal obtained from each of the plurality of pixels, and a reading unit configured to perform scanning in such a way as to perform a plurality of non-destructive reading operations for pixels of one row and as to read pixels of the next row, and to subsequently perform scanning in a row direction and a column direction to read the signal having been sampled and held by the sample-hold unit;an A/D conversion unit configured to perform analog/digital conversion processing on the signal read by the reading unit;an averaging processing unit configured to perform averaging processing on the signal having been analog/digital converted by the A/D conversion unit, for each pixel; anda digital binning unit configured to perform binning processing using the signal having been averaging processed by the averaging processing unit.2. The imaging apparatus according to claim 1 , further comprising:a ...

IMAGING APPARATUS, CONTROL METHOD THEREOF, AND PROGRAM

A flat panel sensor control unit reads image data from each region formed by dividing a flat panel. A write access control unit writes the image data read by the flat panel sensor control unit in a frame memory. A read access control unit starts reading the image data from the frame memory in response to that the writing of the image data to the frame memory becomes a predetermined state. 1an imaging unit in which a plurality of image sensors is arranged;an imaging control unit configured to read image data from each region formed by dividing the imaging unit;a write control unit configured to write the image data read by the imaging control unit in a recording unit; anda read control unit configured to start reading the image data from the recording unit in response to that the writing of the image data to the recording unit becomes a predetermined state.. An imaging apparatus comprising: This application is a Continuation of co-pending U.S. patent application No.: 13/237,478 filed Sep. 20, 2011, which claims the priority benefit of Japanese Patent Application No. 2010-217376 filed Sep. 28, 2010. The disclosures of the above-named applications are hereby incorporated by reference herein in their entirety.1. Field of the InventionThe present invention relates to a radiation imaging apparatus, a control method for the radiation imaging apparatus, and a program. Especially, the present invention is suitable for an X-ray imaging apparatus including a C-shaped arm used in an operating room, or the like.2. Description of the Related ArtThe radiation imaging apparatus is a real-time observation apparatus. The radiation imaging apparatus is used, for example, in an operation using catheters, to display the state of the moving catheter in real time in order to determine to which direction the operator is to move his/her hand without injuring the organ.In recent years, in the field of the radiation imaging apparatuses, in place of X-ray image intensifiers, in order to ...

SYSTEMS AND METHODS FOR PROVIDING A SHARED CHARGE IN PIXELATED IMAGE DETECTORS

Systems and methods for providing a shared charge in pixelated image detectors are provided. One method includes providing a plurality of pixels for a pixelated solid state photon detector in a configuration such that a charge distribution is detected by at least two pixels and obtaining charge information from the at least two pixels. The method further includes determining a position of an interaction of the charge distribution with the plurality of pixels based on the obtained charge information. 1. A pixelated solid state photon detector comprising:a semiconductor substrate;a plurality of anode pixels on one surface of the semiconductor substrate, each of the anode pixels having a stretched length in at least one direction; anda cathode on another surface of the semiconductor substrate opposite from the plurality of anode pixels.2. A pixelated solid state photon detector in accordance with further comprising a plurality of rows of the stretched anode pixels.3. A pixelated solid state photon detector in accordance with further comprising overlapping regions between the stretched anode pixels.4. A pixelated solid state photon detector in accordance with wherein the overlapping regions comprise a saw-toothed configuration.5. A pixelated solid state photon detector in accordance with wherein the stretched anode pixels are connected in pairs.6. A pixelated solid state photon detector comprising:a semiconductor substrate;a plurality of anode pixels on one surface of the semiconductor substrate, each of the anode pixels divided into a plurality of sub-pixels; anda cathode on another surface of the semiconductor substrate opposite from the plurality of anode pixels.7. A pixelated solid state photon detector in accordance with wherein the cathode comprises a pixelated cathode.8. A pixelated solid state photon detector in accordance with wherein each of the sub-pixels form a generally square shaped anode pixel.9. A pixelated solid state photon detector in accordance with ...

IN SITU SYSTEM FOR DIRECT MEASUREMENT OF ALPHA RADIATION, AND RELATED METHOD FOR QUANTIFYING THE ACTIVITY OF ALPHA-EMITTING RADIONUCLIDES IN SOLUTION

A system for in situ nuclear measurement of alpha radiation of an effluent and a related method. The system includes: M diamond semiconductor detectors obtained by chemical vapour deposition, or silicon semiconductor detectors covered with a diamond layer, as alpha radiation detectors, configured to be immersed in the effluent, and to measure alpha radiation emitted by the effluent, M is an integer greater than or equal to 1; P measuring channels connected to the M alpha radiation detectors, P is an integer greater than or equal to 1 and less than or equal to M, each of the P measuring channels configured to provide a value or a sum of alpha activity values from the M alpha radiation detectors to which they are connected; and, if P is greater than 1, a mechanism for adding together results from the P measuring channels. 118-. (canceled)19. An in situ system for nuclear measurement of alpha radiation of an effluent , comprising:M diamond semiconductor detectors obtained by chemical vapour deposition, or silicon semiconductor detectors covered with a diamond layer, as alpha radiation detectors, configured to be immersed in the effluent, and to measure directly alpha radiation emitted by the effluent, wherein M is an integer greater than or equal to 1;P measuring channels connected to the M alpha radiation detectors, wherein P is an integer greater than or equal to 1 and less than or equal to M, and wherein each of the P measuring channels is configured to supply an alpha activity value or a sum of such values from the M alpha radiation detectors to which they are connected;wherein the system also includes, if P is greater than 1, means for adding together the results from the P measuring channels; andwherein the M alpha radiation detectors are individually calibrated by an alpha particle transport code based on Monte Carlo method, the alpha radiation detectors connected to a given measuring channel being calibrated in a same manner.20. The system according to claim 19 ...

IMAGE PICKUP UNIT AND IMAGE PICKUP DISPLAY SYSTEM

An image pickup unit includes: an image pickup section including a plurality of pixels, the plurality of pixels each including a photoelectric converter device and a field-effect transistor; and a driving section reading out a signal charge with use of the transistor, the signal charge being accumulated in each of the plurality of pixels. The driving section turns off the transistor by applying an off-voltage to the transistor, the off-voltage being set in consideration of an off-leakage current between a source and a drain of the transistor. 1. An image pickup unit , comprising:an image pickup section including a plurality of pixels, the plurality of pixels each including a photoelectric converter device and a field-effect transistor; anda driving section reading out a signal charge with use of the transistor, the signal charge being accumulated in each of the plurality of pixels; whereinthe driving section turns off the transistor by applying an off-voltage to the transistor, the off-voltage being set in consideration of an off-leakage current between a source and a drain of the transistor.2. The image pickup unit according to claim 1 , whereinthe driving section reads out the signal charge while switching a plurality of frame frequencies at a predetermined timing in video shooting, andthe driving section switches the off-voltage in accordance with the predetermined timing of the switching of the frame frequencies.3. The image pickup unit according to claim 2 , wherein claim 2 , in switching the frame frequencies claim 2 , the driving section turns off the transistor with use of a voltage value corresponding to a frame frequency after the switching among a plurality of voltage values that are held each being related to each of the plurality of frame frequencies.4. The image pickup unit according to claim 3 , wherein each of the plurality of voltage values is set to allow a difference in charge amount between the off-leakage current of the transistor and a dark ...

RADIOGRAPHIC IMAGING DEVICE

A radiographic imaging device that may detect irradiation states of radiation is provided. Pixels for radiation detection that are provided in a radiation detector of an electronic cassette are configured with characteristics thereof being alterable. The characteristics are set in accordance with the imaging conditions of a radiation image by a cassette control section of the electronic cassette. 1. A radiographic imaging device comprising: a plurality of radiation image acquisition pixels that are arranged in an array in an imaging region of a radiation image, the radiation image acquisition pixels acquiring image information representing the radiation image by respectively converting irradiated radiation to charges and accumulating the charges, and', 'a plurality of radiation detection pixels that detect irradiated radiation by respectively converting irradiated radiation to charges and accumulating the charges, the radiation detection pixels being disposed in the imaging region and a characteristic of the radiation detection pixels being alterable;, 'a radiation detector provided with'}an acquisition unit that acquires an imaging condition of the radiation image; anda setting unit that sets the characteristic in accordance with the imaging condition acquired by the acquisition unit.2. The radiographic imaging device according to claim 1 , wherein the setting unit sets the characteristic by switching between positions of the radiation detection pixels in accordance with the imaging condition.3. The radiographic imaging device according to claim 1 , further comprising amplifiers that amplify signals represented by the charges accumulated by the radiation detection pixels by a pre-specified amplification ratio claim 1 ,wherein the setting unit sets the characteristic by setting the amplification ratio in accordance with the imaging condition.4. The radiographic imaging device according to claim 2 , further comprising amplifiers that amplify signals represented by ...

Radiographic phase-contrast imaging apparatus

A radiographic phase-contrast imaging apparatus obtains a phase-contrast image using two gratings including the first grating and the second grating. The first and second gratings are adapted to form a moire pattern when a periodic pattern image formed by the first grating is superimposed on the second grating. Based on the moire pattern detected by the radiographic image detector, image signals of the fringe images, which correspond to pixel groups located at different positions with respect to a predetermined direction, are obtained by obtaining image signals of pixels of each pixel group, which includes pixels arranged at predetermined intervals in the predetermined direction, as the image signal of each fringe image, where the predetermined direction is a direction parallel to or intersecting a period direction of the moire pattern other than a direction orthogonal to the period direction. Then, a phase-contrast image is generated based on the obtained fringe images.

ION SENSOR AND DISPLAY DEVICE

The present invention provides an ion sensor and a display device which are capable of detecting positive ions and negative ions with high precision, at low cost. The ion sensor includes: a field effect transistor; an ion sensor antenna; and a capacitor, the ion sensor antenna and one terminal of the capacitor connected to a gate electrode of the field effect transistor, the other terminal of the capacitor receiving voltage. 1. An ion sensor comprising:a field effect transistor;an ion sensor antenna; anda capacitor,the ion sensor antenna and one terminal of the capacitor connected to a gate electrode of the field effect transistor,the other terminal of the capacitor receiving voltage.2. The ion sensor according to claim 1 ,wherein the voltage is variable.3. The ion sensor according to claim 1 ,wherein the field effect transistor is a first field effect transistor,the ion sensor antenna is a first ion sensor antenna,the capacitor is a first capacitor,the ion sensor further comprises a second field effect transistor, a second ion sensor antenna, and a second capacitor,the second ion sensor antenna and one terminal of the second capacitor are connected to a gate electrode of the second field effect transistor,the other terminal of the second capacitor receives voltage, andthe first capacitor and the second capacitor are different from each other in capacitance.4. The ion sensor according to claim 1 ,wherein the field effect transistor contains amorphous silicon or microcrystalline silicon.5. A display device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the ion sensor according to ;'}a display including a display-driving circuit; anda substrate,wherein the field effect transistor, the ion sensor antenna, and at least one portion of the display-driving circuit are formed on the same main surface of the substrate. The present invention relates to an ion sensor and a display device. More specifically, the present invention relates to an ion sensor which ...

X-ray detector

An X-ray detector includes a top receiving container in which one or more subjects are disposed, an X-ray detection unit that detects shadow images of the one or more subjects when X-rays are radiated to the one or more subjects and calculates an X-ray radiation angle of the radiated X-rays based on the shadow images of the one or more subjects, and a bottom receiving container having a receiving space in which the X-ray detection unit is received.

RADIOACTIVE RAY DETECTOR CARD

A radioactive ray detector card comprises semiconductor elements on a substrate, each having a plurality of first electrodes, provided on one of main surfaces thereof, and a second electrode, provided on other of main surfaces thereof; the substrate having first electrode wirings electrically connected with the plurality of first electrodes, and card edge portions, which transmit signals from the plurality of semiconductor elements to an external electric circuit; the second electrode corresponding to a second electrode identifier, for identifying the semiconductor elements; the first electrodes corresponding to first electrode identifiers, for identifying the plurality of first electrodes, respectively; and the first electrode wirings electrically connect between the first electrodes, corresponding to one of the first electrode identifiers on one semiconductor element of the plurality of semiconductor elements, and the first electrodes, corresponding to one of the same first electrode identifiers on the other semiconductor element. 1. A radioactive ray detector card comprising plural numbers of semiconductor elements on a substrate , whereineach of said semiconductor elements has plural numbers of first electrodes, which are provided on one of main surfaces thereof, and a second electrode, which is provided on other of main surfaces thereof, wherein plural numbers of pixel regions are constructed, each being able to detect radioactive rays, between said plural numbers of first electrodes and said second electrode, respectively;said substrate has first electrode wirings to be electrically connected with said plural numbers of first electrodes, respectively, and card edge portions, which transmit signals from said plural numbers of semiconductor elements to an external electric circuit;said second electrode is corresponded to a second electrode identifier, for identifying said semiconductor elements, respectively;said plural numbers of first electrodes are ...

DIRECT CONVERSION X-RAY DETECTOR

The invention relates to a radiation detector () comprising a converter element () for converting incident high-energy radiation (X) into charge signals. A cathode () and an array() of anodes () are disposed on different sides of the converter element() for generating an electrical field (E, E) within it The strength of said electrical field (E, E) is increased in a first region(R) near the anode array() with respect to a second region(R) remote from it. Such an increase may be achieved by doping the first region(R) with an electron acceptor. The increased field strength in the first region (R) favorably affects the sharpness of charge pulses generated by incident radiation. 1. A radiation detector comprising:a) a converter element for converting incident high-energy radiation (X) into charge signals;{'sub': 0', 'd, 'b) a cathode and an array of anodes disposed on different sides of the converter element for generating an electrical field (E, E) in the converter element;'}{'sub': 0', 'd', 'd', '0, 'wherein the converter element has a spatial inhomogeneity by which the strength of said electrical field (E, E) is increased in a first region (R) near the anode array and/or decreased in a second region (R) remote from the anode array.'}2. The radiation detector according to claim 1 ,wherein the cathode and the anode array cover areas of substantially the same size.3. The radiation detector according to claim 1 ,{'sub': 0', 'd, 'wherein the electrical field (E, E) is substantially directed perpendicular to planes defined by the cathode and/or the anode array.'}4. The radiation detector according claim 1 ,{'sub': 0', 'd, 'wherein the absolute of the electrical field (E, E) has a non-zero gradient that is perpendicular to planes defined by the cathode and/or the anode array.'}5. The radiation detector according to claim 1 ,{'sub': 'd', 'wherein the first region (R) substantially covers the relevant zone of each pixel weighting potential (φ) from which the substantial part ...

PROGRAMMABLE READOUT INTEGRATED CIRCUIT FOR AN IONIZING RADIATION SENSOR

Embodiments of the present invention provide a computer-implemented method for setting an amplification gain of a pixel array. Specifically, among other things, embodiments of the present invention provide a computer-implemented infrastructure comprising: receiving an electrical signal from an ionizing radiation source at one or more pixel sensors of a plurality of pixel sensors within the pixel array; setting an amplification gain of the electrical signal at a charge sensitive amplifier by turning a switch on or off, wherein the switch connects the at least one or more pixel sensors to a respective capacitor; scanning the pixel array to determine the ionizing radiation source intensity; and generating a gain control signal based on the ionizing radiation source intensity. 1. A integrated circuit module configured to determine an amplification gain of a pixel array , comprising:a pixel array, wherein each pixel within the pixel array comprises a pixel sensor configured to receive an electrical signal from an ionizing radiation source; and a charge sensitive amplifier comprising a capacitor and a switch for connecting the pixel sensor to the capacitor, the charge sensitive amplifier configured to determine the amplification gain of the electrical signal by turning the switch on or off; anda controller configured to scan the pixel array to determine an ionizing radiation source intensity and generate a gain control signal based on the ionizing radiation source intensity.2. The integrated circuit module of claim 1 , wherein the switch is turned on or off in response to the gain control signal.3. The integrated circuit module of claim 1 , wherein the gain control signal is stored in a programmable memory block.4. The integrated circuit module of claim 1 , wherein the ionizing radiation source intensity is determined based on a radiation generated by the ionizing radiation source.5. The integrated circuit module of claim 1 , wherein the pixel array comprises one of a one ...

X-ray detectors

An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels.

INCREASING DYNAMIC RANGE FOR X-RAY IMAGE SENSOR

Embodiments of the present invention provide a computer-implemented method for determining an amplification gain for an X-ray image sensor module. Specifically, among other things, embodiments of the present invention provide a computer-implemented infrastructure comprising: capturing an electrical signal by a pixel sensor; and determining an amplification gain of the electrical signal at a charge sensitive amplifier by turning a switch on or off, wherein the switch connects the pixel sensor to a capacitor. 1. An integrated circuit module configured to determine an amplification gain , comprising:a pixel sensor configured to capture an electrical signal; anda charge sensitive amplifier comprising a capacitor and a switch for connecting the pixel sensor to the capacitor, the charge sensitive amplifier configured to control the amplification gain of the electrical signal by turning the switch on or off.2. The integrated circuit module of claim 1 , wherein the switch is turned on or off in response to a gain control signal.3. The integrated circuit module of claim 2 , wherein the gain control signal is predefined.4. The integrated circuit module of claim 2 , wherein the gain control signal is generated based on an X-ray volume.5. The integrated circuit module of claim 1 , wherein the charge sensitive amplifier is further configured to convert the electrical signal into a voltage.6. The integrated circuit module of claim 5 , further comprising:a comparator configured to compare the voltage derived from the electrical signal with a reference voltage to discriminate whether the electrical signal from the pixel sensor represents a photon detection; anda counter configured to count a photon detection for the pixel based upon an output of the comparator.7. The integrated circuit module of claim 1 , wherein the pixel sensor comprises a photodiode.8. A computer-implemented method for determining an amplification gain for an X-ray image sensor module claim 1 , comprising: ...

METHOD OF MANUFACTURING RADIATION DETECTION APPARATUS, RADIATION DETECTION APPARATUS, AND RADIATION IMAGING SYSTEM

A method of manufacturing a radiation detection apparatus including a photoelectric conversion element that includes a first electrode placed above a substrate, a semiconductor layer placed on the first electrode, and a second electrode placed on the semiconductor layer includes forming the second electrode by removing a portion of an electrode layer formed over the semiconductor layer, the portion being located on an end section of the semiconductor layer. The method includes forming an insulating layer such that the insulating layer covers a portion of the semiconductor layer that is not covered by the second electrode. The method further includes forming a third electrode on at least one portion of the insulating layer such that the insulating layer is interposed between the third electrode and the end section of the semiconductor layer. 1. A method of manufacturing a radiation detection apparatus including a photoelectric conversion element , the photoelectric conversion element including a first electrode placed above a substrate , a semiconductor layer placed on the first electrode , and a second electrode placed on the semiconductor layer , the method comprising:forming the second electrode by removing a portion of an electrode layer formed over the semiconductor layer, the portion being located on an end section of the semiconductor layer;forming an insulating layer such that the insulating layer covers a portion of the semiconductor layer that is not covered by the second electrode; andforming a third electrode on at least one portion of the insulating layer such that the insulating layer is interposed between the third electrode and the end section of the semiconductor layer.2. The method according to claim 1 , further comprising:forming a switch element on the substrate;forming an organic insulating layer over the switch element; andforming the first electrode on the organic insulating layer such that the first electrode is electrically connected to the ...

Imaging Devices with Solid-State Radiation Detector with Improved Sensitivity

A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate. 1. An x-ray radiation detector comprising:a semiconductor substrate having opposing front and rear surfaces;a cathode electrode located on the front surface of said semiconductor substrate configured so as to receive x-ray radiation; anda plurality of anode electrodes formed on the rear surface of said semiconductor substrate;wherein a work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.2. The detector of claim 1 , wherein the x-ray radiation detector is part of a computed tomography scanning device.3. The detector of claim 2 , wherein the x-ray radiation detector is coupled with an x-ray radiation source.4. The detector of claim 3 , wherein the x-ray radiation source and x-ray radiation detector are mounted on a rotatable gantry.5. The detector of claim 3 , wherein the x-ray radiation detector is stationary and the x-ray radiation source is mounted on a movable gantry.6. The detector of claim 1 , wherein the work function of the cathode electrode material is less than about 4.5 eV claim 1 , and the work function of the anode electrode material is greater than or equal to about 4.8 eV.7. The detector of claim 1 , wherein the cathode electrode material comprises one of In claim 1 , Al claim 1 , and Ti.8. The detector of claim 1 , wherein the anode electrode ...

RADIOGRAPHIC APPARATUS

A radiographic apparatus includes an X-ray detection sensor having a two-dimensional detector plane for detecting an intensity distribution of X-rays, a body internally containing the X-ray detection sensor, a supporting member having a supporting surface for supporting the X-ray detection sensor across the detector plane and which fixes the X-ray detection sensor to an inner bottom surface of the body, and a circuit board on which is mounted a circuit for reading out a detection signal from the X-ray detection sensor. Furthermore, in the radiographic apparatus, the supporting member forms a space between the supporting member and the inner bottom surface of the body in a peripheral portion of the supporting member. At least a part of the circuit board is arranged in the space. 1. A radiographic apparatus comprising:a X-ray detection sensor having a detector plane for detecting an X-ray;a read circuit board which reads out a detection signal from said X-ray detection sensor;a body which contains said X-ray detection sensor;a plate-like base which supports said X-ray detection sensor; anda structural body which supports said base against an inner bottom surface of said body, wherein a first space is formed inside of a projection plane of said X-ray detection sensor as viewed from an X-ray incidence direction and between the inner bottom surface of said body and a surface on an opposite side to a supporting surface of said X-ray detection sensor in said base, and wherein said read circuit board is arranged in said first space.2. The apparatus according to claim 1 , wherein a second space is formed outside of a projection plane of said X-ray detection sensor as viewed from an X-ray incidence direction and adjacent to said first space in which said read circuit board is arranged claim 1 , andfurther comprising an electric circuit board other than said read circuit board arranged in said second space.3. The apparatus according to claim 2 , wherein said electric circuit ...

SOLID IMAGING DEVICE AND X-RAY CT DEVICE INCLUDING THE SOLID IMAGING DEVICE

The present invention relates to a solid-state imaging device, etc. having a structure for capturing a high-resolution image even when any row selecting wiring is disconnected. The solid-state imaging device () comprises a photodetecting section (), a signal reading-out section (), a row selecting section (), a column selecting section (), an overflow preventing section (), and a controlling section (). The photodetecting section () has M×N pixel portions Pto Ptwo-dimensionally arranged in a matrix of M rows and N columns, and each of the pixel portions Pto Pincludes a photodiode that generates charge of an amount according to an incident light intensity and a reading-out switch connected to the photodiode. Each of the N pixel portions Pto Pbelonging to an m-th row is connected to the row selecting section () and the overflow preventing section () by an m-th row selecting wiring L. 1. A solid-state imaging device , comprising:{'sub': 1,1', 'M,N', '1,1', 'M,N, 'a photodetecting section having M (an integer not less than 2)×N (an integer not less than 2) pixel portions Pto Ptwo-dimensionally arrayed so as to form a matrix of M rows and N columns, each of the pixel portions Pto Pincluding a photodiode that generates charge of an amount according to an incident light intensity, and a reading-out switch connected to the photodiode;'}{'sub': O,1', 'O,N', 'O,n', '1,n', 'M,n', 'O,n', '1,n', 'M,n, 'a plurality of reading-out wirings Lto L, a reading-out wiring Lof the plurality of reading-out wirings being connected to the reading-out switch included in each of the M pixel portions Pto Pbelonging to an n-th (an integer not less than 1 and not more than N) column in the photodetecting section, the reading-out wiring Lreading out a charge generated in the photodiode included in any one of the M pixel portions Pto Pvia the associated reading-out switch;'}{'sub': O,1', 'O,N', 'O,n, 'a signal reading-out section being connected to each of the plurality of reading-out wirings Lto ...

SOLID-STATE IMAGER AND X-RAY CT APPARATUS INCLUDING SAME

The present invention relates to a solid-state imaging device and the like having a structure for capturing a high-resolution image even when any of the reading-out wiring and row selecting wiring is disconnected. The solid-state imaging device () comprises a photodetecting section () having M×N pixel portions Pto Ptwo-dimensionally arranged in a matrix of M rows and N columns. A pixel portion Pof the photodetecting section () includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SWconnected to the photodiode PD. The pixel portion Poccupies a substantially square region, and most of the region is a region of the photodiode PD. A field-effect transistor serving as the reading-out switch SWis formed in one corner of the region. A channel stopper CS is continuously formed in a region sandwiched by pixel portions. In a region surrounded by any 2×2 pixel portions adjacent to one another, a dummy photodiode PD1 surrounded by the channel stopper CS is formed. 1. A solid-state imaging device which comprises a photodetecting section having M×N pixel portions Pto Ptwo-dimensionally arrayed so as to form a matrix of M rows and N columns , each of the pixel portions Pto Pincluding a photodiode that generates charge of an amount according to an incident light intensity , and a reading-out switch connected to the photodiode , each of the M and N being an integer not less than 2 ,{'sub': 'm,n', 'wherein the photodiode, included in a pixel portion Pof the photodetecting section, is constituted by a first semiconductor region having a first conductivity type, and a second semiconductor region which has a second conductivity type and is formed on the first semiconductor region, the m being an integer not less than 1 and not more than M, the n being an integer not less than 1 and not more than N,'}{'sub': 1,1', 'M,N, 'wherein the photodetecting section has a channel stopper provided in a region sandwiched by each of ...

DETECTOR APPARATUS HAVING A HYBRID PIXEL-WAVEFORM READOUT SYSTEM

A gamma ray detector apparatus comprises a solid state detector that includes a plurality of anode pixels and at least one cathode. The solid state detector is configured for receiving gamma rays during an interaction and inducing a signal in an anode pixel and in a cathode. An anode pixel readout circuit is coupled to the plurality of anode pixels and is configured to read out and process the induced signal in the anode pixel and provide triggering and addressing information. A waveform sampling circuit is coupled to the at least one cathode and configured to read out and process the induced signal in the cathode and determine energy of the interaction, timing of the interaction, and depth of interaction. 1. A gamma ray detector apparatus comprising:a solid state detector comprising a plurality of anode pixels and at least one cathode, the solid state detector being configured for receiving gamma rays during an interaction and inducing a signal in an anode pixel and in a cathode;an anode pixel readout circuit coupled to the plurality of anode pixels and configured to read out and process the induced signal in the anode pixel and provide triggering and addressing information; anda waveform sampling circuit coupled to the at least one cathode and configured to read out and process the induced signal in the cathode and determine energy of the interaction, timing of the interaction, and depth of interaction.2. The gamma ray detector of claim 1 , wherein the solid state detector comprises a room temperature semiconductor crystal.3. The gamma ray detector of claim 2 , wherein the room temperature semiconductor crystal comprises one or more of CZT and CdTe.4. The gamma ray detector of claim 1 , wherein the anode pixel circuit is configured only to provide triggering and addressing information from the interaction.5. The gamma ray detector of claim 1 , wherein the anode pixel circuit is configured for energy resolved photon counting.6. The gamma ray detector of claim 1 , ...

PHOTON COUNTING DETECTOR PIXEL HAVING AN ANODE INCLUDING TWO OR MORE ALTERNATIVELY SELECTABLE AND SEPARATE SUB-ANODES

An imaging system () includes a radiation source () that emits radiation that traverses an examination region and a detector array () with a plurality of photon counting detector pixels () that detect radiation traversing the examination region and respectfully generate a signal indicative of the detected radiation. The photon counting detector pixel includes a direct conversion layer () having a first radiation receiving side () and second opposing side (), a cathode () affixed to and covering all of or a substantial portion of the first side, an anode () affixed to a centrally located region () of the second side, wherein the anode includes at least two sub-anodes (N), and a metallization () affixed to the second side, surrounding the anode and the anode region, with a gap between the anode and the metallization. The system further includes a reconstructor () that reconstructs the signal to generate volumetric image data indicative of the examination region. 1. An imaging system , comprising:a radiation source that emits radiation that traverses an examination region; a direct conversion layer having a first radiation receiving side and second opposing side;', 'a cathode affixed to and covering all of or a substantial portion of the first side;', 'an anode affixed to a centrally located region of the second side, wherein the anode includes at least two sub-anodes; and', 'a metallization affixed to the second side, surrounding the anode and the anode region, with a gap between the anode and the metallization; and, 'a detector array with a plurality of photon counting detector pixels that detect radiation traversing the examination region and generate a signal indicative of the detected radiation, a photon counting detector pixel, comprisinga reconstructor that reconstructs the signal to generate volumetric image data indicative of the examination region.2. The imaging system of claim 1 , further comprising:a substrate having at least two bonding pads, one for each ...

PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS AND METHOD FOR IMPROVING TOPOLOGICAL UNIFORMITY OF THE PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS BASED ON THIN-FILM ELECTRONICS

A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry. The surface inflection has a radius of curvature greater than one half micron.

Digital detector

An extra-oral dental imaging apparatus for obtaining an image from a patient has a radiation source and a digital imaging sensor that provides, for each of a number of image pixels, at least a first digital value according to a count of received photons that exceed at least a first energy threshold. A mount supports the radiation source and the digital imaging sensor on opposite sides of the patient's head. There can be a computer in signal communication with the digital imaging sensor for acquiring one or more two-dimensional images.

POSITRON TOMOGRAPHY IMAGING APPARATUS AND METHOD FOR MULTIPHASE FLOW

The present invention relates to a positron tomography imaging apparatus for a multiphase flow in an oil pipeline, which apparatus utilizes positron and electron annihilation generating a pair of coincidence gamma-rays of 511 keV energy as tomography imaging means and provides an on-line tomography imaging function for metering a multiphase flow in an oil pipeline of an oil field. The apparatus comprises a plurality of sets of parallel high-precision gamma-ray detector arrays with a particular space structure arrangement, a positron radioactive source and a shield, and can acquire a phase fraction of such multiphase flow mixture as oil, gas and water under a condition of a single radioactive source by combining an image processing function. The design of a plurality of sets of high-precision detector arrays also greatly improves accuracy of a multiphase flow metering and its applicability in multiphase flows of different flow patterns. The video information of fluid generated by it will significantly enrich oil, gas metering information for petroleum industry and provide basic data for a more effective reservoir management and production optimization. 1. A positron tomography imaging apparatus for a multiphase flow in an oil pipeline , comprising at least one set of probes configured to produce positron and electron annihilation and detect time-coincidence gamma ray events , wherein each set of probes comprises a pair of parallel gamma-ray detector arrays , a positron radioactive source and a radioactive source shield , wherein the pair of parallel gamma-ray detector arrays are configured to be respectively disposed on both sides of an oil pipeline under detection and perpendicular to an axial direction of the oil pipeline , the positron radioactive source configured to be located between the oil pipeline and a row of gamma-ray detector arrays in the pair of parallel gamma-ray detector arrays and parallel to the pair of parallel gamma-ray detector arrays , the ...

DETECTORS AND SYSTEMS AND METHODS OF USING THEM IN IMAGING AND DOSIMETRY

Certain embodiments described herein are directed to devices and systems that can be used for direct and indirect detection of radiation such as X-rays. In certain examples, the device can include a modulator optically coupled to a sensor. In some examples, the modulator can be configured to switch between different states to provide an imaging signal in one state and a dosimetry signal in another state. 135-. (canceled)36. A device comprising:a switch configured to receive energy from a source and to provide a first signal comprising light in a first mode and to provide a second signal different from the first signal and comprising ionizing radiation in a second mode; anda detector coupled to the switch and configured to image when the switch is in the first mode and configured to measure a radiation dose when the switch is in the second mode.37. The device of claim 36 , in which the switch is configured to provide substantially all light energy from the source to the detector in the first mode and to substantially block all light energy from the source to the detector in the second mode.38. The device of claim 36 , in which the switch comprises a plurality of liquid crystals.39. The device of claim 38 , further comprising a power source electrically coupled to the plurality of liquid crystals and effective to switch the switch from the first mode to the second mode.40. The device of claim 36 , in which the switch further comprises an optical element.41. A device comprising:means for modulating energy received from emitting means, the means for modulating energy configured to provide a first output in an first mode and a second output in a second mode, in which the first and second outputs are different and in which the means for modulating energy is configured to switch between the first mode and the second mode; andmeans for detecting a signal provided from the means for modulating energy.42. The device of claim 41 , in which the means for modulating energy is ...

HIGH ENERGY, REAL TIME CAPABLE, DIRECT RADIATION CONVERSION X-RAY IMAGING SYSTEM FOR CD-TE AND CD-ZN-TE BASED CAMERAS

A calibrated real-time, high energy X-ray imaging system is disclosed which incorporates a direct radiation conversion, X-ray imaging camera and a high speed image processing module. The high energy imaging camera utilizes a Cd—Te or a Cd—Zn—Te direct conversion detector substrate. The image processor includes a software driven calibration module that uses an algorithm to analyze time dependent raw digital pixel data to provide a time related series of correction factors for each pixel in an image frame. Additionally, the image processor includes a high speed image frame processing module capable of generating image frames at frame readout rates of greater than ten frames per second to over 100 frames per second. The image processor can provide normalized image frames in real-time or can accumulate static frame data for substantially very long periods of time without the typical concomitant degradation of the signal-to-noise ratio. 1. An x-ray imaging system , comprising:{'b': '44', 'an x-ray imaging device with an output providing an array of pixels values for producing multiple different individual image frames (),'}{'b': '96', 'each said pixel value generated responsive to absorption of impinging high energy x-ray gamma ray radiation, converted by an analog to digital converter () (ADC) providing, at the output of the imaging device, the array of pixel values, each pixel value with a first bit depth (N),'}{'b': '45', 'each individual frame of said multiple individual frames comprising the array () of the pixel values with the first bit depth (N); and'}{'b': 24', '47', '47, 'an image processor connected to receive the array of pixel values from the output of the imaging device, the image processor including a processor () calculating final image pixel values () of a second bit depth (M) from the pixel values of the first bit depth (N) of the different individual frames, the image processor outputting frames of the final image pixel values () of an x-ray image to ...

Leakage current collection structure and a radiation detector with the same

A radiation detector comprises a piece of semiconducting material. On its surface, a number of consecutive electrode strips are configured to assume electric potentials of sequentially increasing absolute value. A field plate covers the most of a separation between a pair of adjacent electrode strips and is isolated from the most of said separation by an electric insulation layer. A bias potential is coupled to said field plate so that attracts surface-generated charge carriers.

ESD PROTECTION SYSTEM AND X-RAY FLAT PANEL DETECTOR

An ESD protection system includes an ESD leakage bus and an ESD protection circuit having one of its terminals connected to the ESD leakage bus. The ESD protection circuit includes at least a pair of amorphous silicon thin film transistors which are connected in a back-to-back manner, and a first shading layer is provided over the channels of the pair of amorphous silicon thin film transistors. When the ESD protection system is applied to an X-ray flat panel detector, no photocurrent will occur during the use of the X-ray flat panel detector, the effect of the photocurrent on the voltage of the scan line is reduced. Further, when the first shading layer is connected to a negative fixed potential, it can be ensured that the ESD protection circuit has small threshold voltage while the leakage current in the ESD protection circuit is reduced, and power consumption is reduced. 1. An ESD protection system , comprising:an ESD leakage bus formed on a substrate; and a first amorphous silicon thin film transistor;', 'a second amorphous silicon thin film transistor connected in a back-to-back manner with the first amorphous silicon thin film transistor; and', 'a first shading layer over the channel of the first amorphous silicon thin film transistor and the channel of the second amorphous silicon thin film transistor., 'an ESD protection circuit formed on the substrate and having a first wiring terminal and a second wiring terminal, wherein the first wiring terminal is connected to the ESD leakage bus, the ESD protection circuit including at least a pair of amorphous silicon thin film transistors, the pair of amorphous silicon thin film transistors including;'}2. The ESD protection system according to claim 1 , wherein the ESD protection circuit includes a plurality of pairs of amorphous silicon thin film transistors which are connected in series claim 1 , in parallel or in series-parallel.3. The ESD protection system according to claim 1 , wherein an area of the first ...

UPSTREAM DIRECT X-RAY DETECTION

A radiation beam, for example a therapeutic radiation beam such as an IMRT or VMAT X-ray beam is monitored using a Monolithic Active Pixel Sensor (MAPS) detector. Photons of the radiation beam can interact with the MAPS detector, and the radiation beam configuration can be estimated from the determined positions of the interactions. The detector is made sufficiently thin that it interacts only very weakly with the X-ray photons. For example, less than 1 in 10of the X-ray photons might interact with the detector. Hence, the disturbance to the X-ray beam is negligible. 1. A method of monitoring a radiation beam , the method comprising:placing in the beam a monolithic active pixel sensor (MAPS) detector;exposing the MAPS detector to the radiation beam, such that photons of the radiation beam can interact with the MAPS detector;determining a position of each identified interaction; andestimating the radiation beam configuration from the determined positions of the interactions.2. A method as claimed in claim 1 , comprising:exposing the MAPS detector to the radiation beam for a plurality of successive frames; and further comprising:in each frame, identifying each interaction between a photon of the radiation beam and the MAPS detector;determining a position of each identified interaction; andestimating the radiation beam configuration from the determined positions of the interactions over the plurality of frames.3. A method as claimed in claim 1 , further comprising:distinguishing between interactions between photons of the radiation beam and the MAPS detector, and interactions between electrons and the MAPS detector.4. A method as claimed in claim 3 , comprising:identifying each interaction between a photon of the radiation beam and the MAPS detector, based on a shape of a cluster of detector pixels excited by the interaction.5. A method as claimed in claim 4 , comprising:identifying an interaction between a photon of the radiation beam and the MAPS detector, in the ...

Counting Digital X-Ray Detector And Method For Taking A Series Of X-Ray Images

A counting digital X-ray detector for taking X-ray images of an object penetrated by X-ray radiation may include at least one detector module having an X-ray converter for converting X-ray radiation into an electrical signal and a matrix having a large number of counting pixel elements, wherein each counting pixel element has a signal input, a conversion device for converting the electrical signal into a count signal and a first digital storage unit for storing the count signal, wherein exactly one second digital storage unit is allocated to each first storage unit, and this is designed to form a copy of the first storage unit at the moment of transfer by way of a transfer process, and wherein the X-ray detector is designed in such a way that the transfer process can be carried out simultaneously for the large number of pixel elements. 1. A counting digital X-ray detector for taking X-ray images of an object penetrated by X-ray radiation , comprising: an X-ray converter configured to convert X-ray radiation into an electrical signal, and', a signal input,', 'a conversion device configured to convert the electrical signal into a count signal, and', 'a first digital storage unit configured to store the count signal,', 'wherein exactly one second digital storage unit is allocated to each first storage unit and configured to form a copy of the first storage unit at a moment of transfer by a transfer process, and', 'wherein the X-ray detector is configured such that the transfer process is executable simultaneously for the large number of pixel elements., 'a matrix having a large number of counting pixel elements, each counting pixel element comprising], 'at least one detector module module having2. The X-ray detector of claim 1 , wherein the conversion device includes a charge amplifier and at least one discriminator claim 1 , each discriminator having an adjustable threshold value.3. The X-ray detector of claim 2 , wherein the conversion device includes a plurality of ...

RADIATION DETECTOR

In the radiation detector, a capacitor is connected between a connecting wire which is connected with a preamplifier (amplifier) and another connecting wire. Specifically, the capacitor is connected between the connecting wire and another connecting wire which has the lowest electric resistance with respect to a signal wire among connecting wires connected with a radiation detecting element. This prevents electric current produced by static electricity from flowing to the signal wire and prevents the signal wire or the preamplifier from being damaged by static electricity. A circuit element for a countermeasure against static electricity is not provided at the signal wire, and therefore input capacitance of the preamplifier is kept low. Accordingly, the radiation detector is improved by a sufficient countermeasure against static electricity while input capacitance of the preamplifier is kept low. 1. A radiation detector comprising:a radiation detecting element for detecting radiation and outputting a signal;an amplifier, into which the signal from the radiation detecting element is inputted;a plurality of connecting wires, which are respectively connected with the radiation detecting element or the amplifier and are to be respectively connected with an external power supply or ground; anda circuit element, which is connected between at least one of the plurality of connecting wires and another connecting wire and has capacitance.2. The radiation detector according to claim 1 ,wherein the circuit element is connected between each of one or a plurality of connecting wires which are connected with the radiation detecting element and one connecting wire which is connected with the amplifier and which is to be connected with ground.3. The radiation detector according to claim 2 ,wherein the amplifier is connected with a plurality of connecting wires, andthe circuit element is connected between the one connecting wire and another connecting wire which is connected with ...

RADIATION IMAGING CONTROL APPARATUS, RADIATION IMAGING SYSTEM AND RADIATION IMAGING APPARATUS, AND METHOD FOR CONTROLLING THE SAME

A radiation imaging control apparatus, which is communicable with a radiation imaging apparatus including a radiation sensor and capable of acquiring an X-ray moving image, includes a first communication unit configured to communicate with the radiation imaging apparatus via Ethernet communication, a second communication unit configured to communicate with the radiation imaging apparatus via at least a pair of bidirectional serial optical communication lines, a first control unit configured to cause the first communication unit to transmit a first signal for setting at least one parameter to the radiation imaging apparatus, a second control unit configured to cause the second communication unit to output data of the X-ray moving image received from the radiation imaging apparatus to an image processing unit, and transmit a second signal for some settings to the radiation imaging apparatus. 1. A radiation imaging control apparatus communicable with a radiation imaging apparatus including a radiation sensor and capable of acquiring an X-ray moving image , the radiation imaging control apparatus comprising:a first communication unit configured to communicate with the radiation imaging apparatus via Ethernet communication;a second communication unit configured to communicate with the radiation imaging apparatus via at least a pair of bidirectional serial optical communication lines;a first control unit configured to cause the first communication unit to transmit a first signal for setting at least one parameter among a pixel sensitivity setting, a setting of a number of times of non-destructive reading, an analog binning setting, a digital binning setting, an accumulation time setting, and a reading area size setting to the radiation imaging apparatus;a second control unit configured to cause the second communication unit to output data of the X-ray moving image received from the radiation imaging apparatus to an image processing unit, and transmit a second signal for ...

ELECTRONIC VARIABLE GAIN FOR X-RAY DETECTOR

An electronic circuit for processing electronic measurement data measured by an X-ray detector array being configured for detecting X-rays and having a plurality of detector pixels generating the electronic measurement data in response to X-rays propagating onto the detector array, the electronic circuit comprising a measurement data receiving interface configured for receiving the electronic measurement data from the detector pixels as analog signals, an analog gain adjustment unit configured for manipulating the analog signals in accordance with an adjustable analog gain value, and a processor for processing the electronic measurement data after the manipulation. 1. An electronic circuit for processing electronic measurement data measured by an X-ray detector array being configured for detecting X-rays and having a plurality of detector pixels generating the electronic measurement data in response to X-rays propagating onto the detector array , the electronic circuit comprising:a measurement data receiving interface configured for receiving the electronic measurement data from the detector pixels as analog signals;an analog gain adjustment unit configured for manipulating the analog signals in accordance with an adjustable analog gain value;a processor for processing the electronic measurement data after the manipulation.2. The electronic circuit according to claim 1 , wherein the analog gain adjustment unit has an analog gain value input interface configured for receiving the adjustable analog gain value from a communicatively coupled entity.3. The electronic circuit according to claim 1 , wherein the analog gain adjustment unit has a user interface configured for receiving the adjustable analog gain value input by a user claim 1 , particularly via an input unit.4. The electronic circuit according to claim 1 , comprising at least one of the following features:the analog gain adjustment unit is configured for manipulating the analog signals in accordance with an ...

Complementary metal-oxide-semiconductor x-ray detector

In accordance with one embodiment, a digital X-ray detector is provided. The detector includes a scintillator layer configured to absorb radiation emitted from a radiation source and to emit optical photons in response to the absorbed radiation. The detector also includes a complementary metal-oxide-semiconductor (CMOS) light imager that is configured to absorb the optical photons emitted by the scintillator layer. The CMOS light imager includes a first surface and a second surface, and the first surface is disposed opposite the second surface. The scintillator layer contacts the first surface of the CMOS light imager.

Radiation beam analyzer and method

A radiation beam analyzer for measuring the distribution and intensity of radiation produced by a Cyberknife®. The analyzer employs a relative small tank of water into which a sensor is placed to maintain a constant SAD (source to axis distance). A first method maintains a fixed position of detector, and raises or lowers the small tank of water. A second method moves the detector up, down or rotationally synchronously in opposite directions with respect to the small tank of water to keep the SAD constant. These methods position the detector relative to the radiation source to simulate the location of a malady within a patient's body. An embodiment of the present invention enables measurements of substantially larger fields. This is accomplished by rotating a tank of water 90 degrees from a first position to a second position.

RADIATION IMAGE PICKUP DEVICE

A radiation image pickup device includes: an image pickup section having a plurality of pixels and generating an electric signal according to incident radiation, the plurality of pixels each including a photoelectric conversion element and one or a plurality of transistors of a predetermined amplifier circuit; and a correction section subjecting signal data of the electric signal obtained in the image pickup section to predetermined correction process. The correction section makes a comparison between measurement data obtained by measuring an input-output characteristic of the amplifier circuit in each of the plurality of pixels and initial data on the input-output characteristic, and performs the correction process by the pixel individually, by using a result of the comparison. 1. A photo-electronic conversion device comprising:an image pickup section having a plurality of pixels and configured to generate an electric signal according to incident light, the image pickup section including a photoelectric conversion element and an amplifier circuit; anda correction section configured to subject signal data from the electric signal from the image pickup section to a predetermined correction process,wherein the correction section makes a comparison for the plurality of pixels between measurement data obtained by measuring a characteristic of the amplifier circuit and a reference data on the characteristic of the amplifier circuit, and performs the correction process based on the comparison for the plurality of pixels.2. The photo-electronic conversion device according to claim 1 , wherein the correction section performsgeneration of correction data for at least one of the plurality of pixels based on the result of the comparison, andthe correction process by using the correction data.3. The photo-electronic conversion device according to claim 2 , wherein the correction section performsdetermination of an offset amount of the characteristic between the measurement data ...

Radiographic imaging device and computer readable medium

There is provided a radiographic imaging device including: a radiation detector including plural radiographic image acquisition pixels that are arranged in a matrix in an imaging region for capturing a radiographic image and that acquire image information representing the radiographic image by converting applied radiation into electric charges and storing the electric charges and plural radiation detection pixels that are arranged in the imaging region, that have mutually different characteristics, and that detect the applied radiation by converting the applied radiation into electric charges and storing the electric charges; and a detecting unit that uses the radiation detection pixels selectively according to the characteristics to detect a state of application of the radiation.

IONIZING RADIATION DETECTION

A detector array () includes a detector () configured to detect ionizing radiation and output a signal indicative of the detected radiation, wherein the detector at least includes a semiconductor element () and an illumination subsystem () configured to generate and transfer sub-band-gap illuminating radiation to selectively illuminate only a sub-portion of the semiconductor element in order to produce a spatially patterned illumination distribution inside the element. 1. A detector array , comprising:a detector configured to detect ionizing radiation and output a signal indicative of the detected radiation, wherein the detector at least includes a semiconductor element; andan illumination subsystem configured to generate and transfer sub-band-gap illuminating radiation to selectively illuminate only a sub-portion of the semiconductor element in order to produce a spatially patterned illumination distribution inside the element.2. The detector array of claim 1 , further comprising:an electric contact connected to the illuminated sub-portion of the semiconductor element; andan electrical source configured to apply an electric potential to the electric contact.3. The detector array of claim 1 , wherein the illumination increases a conductivity of the sub-portion from a first conductivity to a second higher conductivity claim 1 , wherein the second higher conductivity is higher than a conductivity of non-illuminated sub-portions of the semiconductor element claim 1 , and wherein the first conductivity is not more than the conductivity of non-illuminated sub-portions of the semiconductor element without the illuminating radiation.4. The detector array of claim 1 , the illumination subsystem comprising:at least one illumination source that generates sub-band-gap radiation.5. The detector array of claim 1 , wherein energy of the illuminating radiation photon does not exceed one half of the semiconductor element band gap.6. The detector array of claim 4 , wherein at least ...

RADIOGRAPHIC IMAGING DEVICE, METHOD FOR ACHIEVING PIXEL VALUE, AND NON-TRANSITORY COMPUTER READABLE MEDIUM

The present invention provides a radiation imaging device including: a radiation amount detection pixel that generates charges in amounts corresponding to irradiated radiation amounts; a charge amplifier that accumulates charges provided from the radiation amount detection pixel, and that outputs output signals with signal levels corresponding to accumulated charge amounts; an acquisition section that acquires an output value of the charge amplifier at a time when a first accumulation duration has passed from an accumulation being started, as a first detection value, and that acquires an output value of the charge amplifier at a time when a second accumulation duration has passed from an accumulation being started, as a second detection value; and a derivation section that derives a difference between the first detection value and the second detection value as a pixel value of the radiation amount detection pixel. 1. A radiation imaging device comprising:a radiation amount detection pixel that generates charges in amounts corresponding to radiation amounts of irradiated radiation;a charge amplifier that accumulates charges provided from the radiation amount detection pixel via a signal line, and that outputs output signals with signal levels corresponding to accumulated charge amounts; acquires an output value of the charge amplifier at a point in time when a first accumulation duration has passed from an accumulation being started, as a first detection value, and that', 'acquires an output value of the charge amplifier at a point in time when a second accumulation duration, different from the first accumulation duration, has passed from an accumulation being started, as a second detection value; and, 'an acquisition section that'}a derivation section that derives a difference between the first detection value and the second detection value as a pixel value of the radiation amount detection pixel.2. The radiation imaging device according to claim 1 , wherein the ...

METHOD AND APPARATUS FOR SUPPLYING BIAS DRIVE VOLTAGE TO RADIATION DETECTOR

A radiation detecting apparatus includes a radiation detector, a power source, a current detector, and a bias voltage adjuster. The detector includes a semiconductor layer having a compound semiconductor directly converting incoming radiation photons to electric charges and a pair of electrode layers stacked individually on both surfaces of the semiconductor layer. One layer of the paired electrode layers has plural collecting electrodes which enable the semiconductor layer to have one-dimensionally or two-dimensionally arrayed pixels. The power source applies a direct-current bias voltage between the electrodes such that the electric charge is collected to one electrode of the electrodes. The current detector detects current supplied from the power source when the power source applies the bias voltage between the electrodes. The bias voltage adjuster changes a value of the bias voltage applied by the power source depending on a value of the current detected by the current detector. 1. A radiation detecting apparatus , comprising:a radiation detector comprising a semiconductor layer consisting of a compound semiconductor which directly converts an incoming radiation photon to an electric charge and a pair of electrode layers stacked individually on both surfaces of the semiconductor layer, wherein one of two electrode layers of the paired electrode layers is structured into a plurality of collecting electrodes which enable the semiconductor layer to have one-dimensionally or two-dimensionally arrayed pixels;a power source that applies a direct-current bias voltage between the pair of electrodes such that the electric charge is collected to one of the pair of electrodes;a current detector that detects current supplied from the power source when the power source applies the bias voltage between the pair of electrodes; anda bias voltage adjuster that changes a value of the bias voltage applied by the power source depending on a value of the current detected by the ...

Detector diode

The present invention generally relates to a radiation sensor for use particularly in, but by no means exclusively, in measuring radiation dose in photon or electron fields such as for radiation medicine, including radiotherapy and radiation based diagnosis. According to the present invention, there is provided a semiconductor radiation detector comprising a radiation sensitive detector element arranged such that it forms a continuous radiation sensitive portion having surfaces oriented in at least two non-parallel directions.

Stabilized thallium bromide radiation detectors and methods of making the same

According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.

RADIATION SENSOR ELEMENT AND METHOD

A radiation sensor element () is provided. The radiation sensor element () comprises a read-out integrated circuit () having an interconnection face (), a compound semiconductor layer () opposite the interconnection face (), and a copper-pillar interconnection element () extending from the interconnection face () towards the compound semiconductor layer (). 2100132. A radiation sensor element () according to claim 1 , wherein the oxidation barrier layer () comprises gold claim 1 , Au; silver claim 1 , Ag; rhodium claim 1 , Rh; platinum claim 1 , Pt; palladium claim 1 , Pd; ruthenium claim 1 , Ru; osmium claim 1 , Os; and/or iridium claim 1 , Ir.3100132. A radiation sensor element () according to claim 2 , wherein the oxidation barrier layer () comprises at least 90 atomic percent of noble metal or metals.4100120. A radiation sensor element () according to claim 1 , wherein the compound semiconductor layer () comprises cadmium telluride claim 1 , CdTe; cadmium zinc telluride claim 1 , CdZnTe; and/or cadmium manganese telluride claim 1 , CdMnTe.5230234240232. A radiation sensor element () according to claim 1 , wherein the copper-pillar interconnection element () comprises a projecting lip part () at its end opposite the interconnection face ().6220224228225226. A radiation sensor element () according to claim 1 , wherein the copper-pillar interconnection element () comprises a diffusion barrier layer () between the copper part () and the oxidation barrier layer ().7220228. A radiation sensor element () according to claim 6 , wherein the diffusion barrier layer () comprises nickel claim 6 , Ni.8210210217214213. A radiation sensor element () according to claim 1 , wherein the radiation sensor element () further comprises low-temperature solder () between the copper-pillar interconnection element () and the compound semiconductor layer ().9100140130120. A radiation sensor element () according to claim 1 , further comprising electrically conductive adhesive () between ...

X-RAY IMAGER WITH CMOS SENSOR EMBEDDED IN TFT FLAT PANEL

An x-ray imaging device include a scintillator layer configured to generate light from x-rays, a TFT detector array at the first surface of the scintillator layer to detect light generated in the scintillator, and a CMOS sensor at the second surface of the scintillator layer to detect light generated in the scintillator. 1. An x-ray imaging device , comprising:a scintillator layer configured to generate light from x-rays, said scintillator layer comprises a first surface and a second surface;a first detector at the first surface configured to detect light generated in the scintillator layer, said first detector comprises a plurality of first detection pixels; anda second detector at the second surface configured to detect light generated in the scintillator layer, said second detector comprises a plurality of second detection pixels, wherein the second detector is different from the first detector.2. The x-ray imaging device of wherein the first detector comprises a TFT detector array comprising the plurality of first detection pixels having a first pixel size claim 1 , and the second detector comprises a CMOS sensor comprising the plurality of second detection pixels having a second pixel size smaller than the first pixel size.3. The x-ray imaging device of wherein the first pixel size is an integral multiple of the second pixel size.4. The x-ray imaging device of wherein the scintillator layer claim 3 , the first detector claim 3 , and the second detector are arranged in a configuration such that x-rays traverse the TFT detector array before propagating in the scintillator layer.5. The x-ray imaging device of wherein the first detector comprises a base plate and the TFT detector array claim 4 , and the first detector is disposed such that the TFT detector array is in between the base plate and the scintillator layer.6. The x-ray imaging device of wherein the CMOS sensor comprises a wafer and the plurality of second detection pixels claim 5 , and the CMOS sensor is ...

RADIATION DETECTOR AND METHOD FOR REDUCING THE AMOUNT OF TRAPPED CHARGE CARRIERS IN A RADIATION DETECTOR

A semiconductor based photon counting detector comprising a substrate () of semiconductor material; a detector bias voltage supply () for applying a detector bias voltage over the substrate, each time during a data acquisition period (t); a readout arrangement () for repetitively reading out data indicative of charges freed in, and transported through, the substrate () in response to photons being absorbed, each time during a readout period (t) following a data acquisition period, wherein the data contain number of charge pulses of photons being absorbed; an external light source () for exposing the substrate for light to enable trapped charge carriers to escape from defect levels in the substrate; and a control device () operatively connected to the detector bias voltage supply, the readout arrangement, and the external light source. The control device () is configured to control the detector bias voltage supply to switch off the detector bias voltage over the substrate and the external light source () to switch on the light, thus exposing the substrate () for light to enable trapped charge carriers to escape from defect levels in the substrate, concurrently during at least some of said readout periods. 1. A semiconductor based photon counting detector comprising:a substrate of semiconductor material;{'sub': '1', 'a detector bias voltage supply for applying a detector bias voltage over the substrate, each time during at least one data acquisition period (t);'}{'sub': '2', 'a readout arrangement for repetitively reading out data indicative of charges freed in, and transported through, the substrate in response to photons being absorbed, each time during at least one readout period (t) following at least one associated data acquisition period, wherein the data contain number of charge pulses of photons being absorbed;'}an external light source for exposing the substrate for light to allow trapped charge carriers to escape from defect levels in the substrate; anda ...

POLYHEDRAL-SHAPED RADIATION COUNTER

Provided is a polyhedral-shaped radiation counter which measures a radiation level of a radioactive material, in which sensor modules configured to measure the radiation level are disposed at vertexes of a polyhedral shape, respectively, and the sensor modules are connected to each other by rod-shaped frame members disposed in edge positions of the polyhedral shape and face parts of the polyhedral shape form an open space. 1. A polyhedral-shaped radiation counter which measures a radiation level of a radioactive material ,wherein sensor modules configured to measure the radiation level are disposed at vertexes of a polyhedral shape, respectively, andthe sensor modules are connected to each other by rod-shape frame members disposed in edge positions of the polyhedral shape and face parts of the polyhedral shape form an open space.2. The polyhedral-shaped radiation counter of claim 1 , wherein the radioactive material is disposed within a predetermined range from a center of mass of the polyhedral shape.3. The polyhedral-shaped radiation counter of claim 1 , wherein a plate-shaped sample support is disposed to be slidable in the frame members.4. The polyhedral-shaped radiation counter of claim 3 , wherein the sample support is manufactured using synthetic resin made of an organic material claim 3 , or aluminum.5. The polyhedral-shaped radiation counter of claim 1 , wherein the sensor modules comprise a silicon positive-intrinsic-negative (PIN) diode.6. The polyhedral-shaped radiation counter of claim 5 , wherein the sensor modules comprise a scintillator which generates visible rays in response to incident radiation.7. The polyhedral-shaped radiation counter of claim 1 , wherein the polyhedral shape is a regular polyhedral shape.8. The polyhedral-shaped radiation counter of claim 2 , wherein the polyhedral shape is a regular polyhedral shape.9. The polyhedral-shaped radiation counter of claim 3 , wherein the polyhedral shape is a regular polyhedral shape.10. The ...

IMAGE SENSOR

An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element. 1. An image sensor , comprising:a switching element disposed on a substrate;a photoelectric conversion element connected to the switching element;a first protective film directly covering the photoelectric conversion element; anda first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film,wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element,wherein the first organic film has a first covering portion at an end of the first organic film,wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, andwherein the first organic film covers only the first end portion of the photoelectric conversion element.2. The image sensor according to claim 1 , wherein the first covering portion has a refractive index that is higher than a ...

MERCURY CHALCOIODIDES FOR ROOM TEMPERATURE RADIATION DETECTION

Methods and devices for detecting incident radiation, such as incident X-rays or gamma-rays, are provided. The methods and devices use single-crystalline mercury chalcoiodide compounds having the formula HgQI, where Q represents a chalcogen atom or a combination of chalcogen atoms, as photoelectric materials. Also provided are methods for growing single-crystals of the mercury chalcoiodide compounds using external organic chemical transport agents. 1. A method for detecting incident radiation , the method comprising:{'sub': 3', '2', '2, 'exposing a material comprising a single-crystal of an inorganic compound having the formula HgQI, where Q represents a chalcogen atom or a combination of chalcogen atoms, to incident X-ray, gamma-ray, or nuclear radiation, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material; and'}measuring at least one of the energy or intensity of the absorbed incident radiation by detecting the generated electrons, holes, or both.2. The method of claim 1 , wherein the material is exposed to the gamma-ray radiation.3. The method of claim 1 , wherein the single-crystal has a length of at least 5 mm and a thickness of at least 1 mm.4. The method of claim 1 , wherein Q represents Se.5. The method of claim 4 , wherein the single-crystal has a length of at least 5 mm and a thickness of at least 1 mm.6. The method of claim 4 , wherein the single-crystal has a width of at least 5 mm.7. The method of claim 4 , wherein the single-crystal has a length of at least 1 cm and a thickness of at least 2 mm.8. The method of claim 1 , wherein Q represents S.9. The method of claim 1 , wherein Q represents Te.10. The method of claim 1 , wherein the method is carried out at temperatures in the range from about 20° C. to about 26° C.11. A device for the detection of incident radiation comprising:{'sub': 3', '2', '2, 'a material comprising a single-crystal of an inorganic compound having the formula HgQI, where Q ...

PORTABLE RADIATION DETECTOR SYSTEM

An apparatus for detecting radiation, comprising: a first radiation absorption layer configured to generate first electrical signals from a photon of the radiation absorbed by the first radiation absorption layer, wherein the first radiation absorption layer comprises a first electrode; an electronic system configured to process the first electrical signals; a counter configured to register a number of photons absorbed by the radiation absorption layer; a controller; the controller is configured to cause the number registered by the counter to increase by one; a power supply; and a communication interface configured for the electronic system to communicate with outside circuitry. 1. A system comprising: (i) a first radiation absorption layer configured to generate first electrical signals from a photon of the radiation absorbed by the first radiation absorption layer, wherein the first radiation absorption layer comprises a first electrode;', a first voltage comparator configured to compare a voltage of the first electrode to a first threshold;', 'a second voltage comparator configured to compare the voltage to a second threshold;', 'a counter configured to register a number of photons of the radiation absorbed by the first radiation absorption layer;', 'a controller;', 'wherein the controller is configured to start a time delay from a time at which the first voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the first threshold;', 'wherein the controller is configured to activate the second voltage comparator during the time delay;', 'wherein the controller is configured to cause the number registered by the counter to increase by one, if the second voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the second threshold;, '(ii) an electronic system configured to process the first electrical signals, wherein the electronic system comprises, '(iii) a power ...

CONTROL APPARATUS, MEASUREMENT SYSTEM, CONTROL METHOD, AND PROGRAM

A control apparatus may include a processor for calculating a detection efficiency, which is detected by a gamma-ray detection unit, of gamma-rays emitted from a sample stuffed into a first container. A shape of the first container is a shape which surrounds at least a part of the gamma-ray detection unit that detects the gamma-rays. An area inside the first container is divided into a plurality of similar areas which is area similar in shape to each other. The gamma-ray detection unit detects the gamma-rays emitted from the sample included in each the similar areas for each of the plurality of similar areas. The processor calculates the detection efficiency as a similar-area-detection efficiency based on a result of detection performed by the gamma-ray detection unit. 1. A control apparatus comprising:a processor for calculating a detection efficiency, which is detected by a gamma-ray detection unit, of gamma-rays emitted from a sample stuffed into a first container;wherein a shape of the first container is a shape which surrounds at least a part of the gamma-ray detection unit that detects the gamma-rays,wherein an area inside the first container is divided into a plurality of similar areas which is area similar in shape to each other,wherein the gamma-ray detection unit detects the gamma-rays emitted from the sample included in each the similar areas for each of the plurality of similar areas, andwherein, the processor calculates the detection efficiency as a similar-area-detection efficiency based on a result of detection performed by the gamma-ray detection unit.2. The control apparatus according to claim 1 ,wherein the first container is a Marinelli-container.3. The control apparatus according to claim 1 ,wherein the gamma-ray detection unit includes a detection element that detects the gamma-rays, andwherein the first container surrounds at least the detection element.4. The control apparatus according to claim 1 ,wherein the processor calculates the similar- ...

X-Ray Detectors Capable of Limiting Diffusion of Charge Carriers

An apparatus suitable for detecting X-ray is disclosed. In one example, the apparatus comprises an X-ray absorption layer comprising a pixel and a second pixel, and a layer of material or vacuum extending across a thickness of the X-ray absorption layer and encircling the pixel, wherein the layer of material is configured to prevent a charge carrier in the pixel from moving through the layer of material. In another example, the apparatus comprises an X-ray absorption layer comprising a plurality of columns of a semiconductor configured to absorb X-ray, and a layer of material or vacuum extending across a thickness of the X-ray absorption layer and encircling each of the columns, wherein the layer of material is configured to prevent transfer of a charge carrier between two of the columns. 1. An apparatus suitable for detecting X-ray , comprising: a pixel,', 'a layer of material or vacuum extending across a thickness of the X-ray absorption layer and encircling the pixel, wherein the layer of material or vacuum is configured to prevent a charge carrier in the pixel from moving through the layer of material or vacuum., 'an X-ray absorption layer comprising2. The apparatus of claim 1 , wherein the material is an electrically insulating material.3. The apparatus of claim 1 , wherein the material is a gas.4. The apparatus of claim 1 , wherein the layer of material comprises a heavily doped semiconductor.5. The apparatus of claim 1 , wherein the apparatus comprises an array of pixels.6. A system comprising the apparatus of and an X-ray source claim 1 , wherein the system is configured for performing X-ray radiography on human chest or abdomen.7. A system comprising the apparatus of and an X-ray source claim 1 , wherein the system is configured for performing X-ray radiography on human mouth.8. A cargo scanning or non-intrusive inspection (NII) system claim 1 , comprising the apparatus of and an X-ray source claim 1 , wherein the cargo scanning or non-intrusive inspection ...

Packaging Methods of Semiconductor X-Ray Detectors

Disclosed herein is a method for making an apparatus suitable for detecting X-ray, the method comprising: bonding a plurality of chips to a substrate; wherein the substrate comprises an X-ray absorption layer comprising a first plurality of electrical contacts; wherein each of the plurality of chips comprises an electronic layer comprising a second plurality of electrical contacts and an electronic system configured to process or interpret signals generated by X-ray photons incident on the X-ray absorption layer; aligning the first plurality of electrical contacts to the second plurality of electrical contacts; mounting the chips to the substrate such that the first plurality of electrical contacts are electrically connected to the second plurality of electrical contacts; wherein the second plurality of electrical contacts are configured to feed the signals to the electronic system. 1. A method for making an apparatus suitable for detecting X-ray , the method comprising:bonding a plurality of chips to a substrate;wherein the substrate comprises an X-ray absorption layer comprising a first plurality of electrical contacts;wherein each of the plurality of chips comprises an electronic layer comprising a second plurality of electrical contacts and an electronic system configured to process or interpret signals generated by X-ray photons incident on the X-ray absorption layer;aligning the first plurality of electrical contacts to the second plurality of electrical contacts;mounting the chips to the substrate such that the first plurality of electrical contacts are electrically connected to the second plurality of electrical contacts;wherein the second plurality of electrical contacts are configured to feed the signals to the electronic system.2. The method of claim 1 , further comprising attaching the plurality of chips to a support wafer.3. The method of claim 2 , wherein the plurality of chips are attached to the support wafer with an adhesive.4. The method of claim 2 ...

DETECTOR IRRADIATED WITH NUCLEAR POWER

A radiation detector to be irradiated with nuclear particles, includes an electrical connection system including an anode and a cathode; a metal housing, inside of which at least one portion of the electrical connection system is positioned; a semi-conductor sensor including a first electrical circuit, the sensor being encapsulated in the housing; and an attachment system for attaching the sensor to the housing, the attachment system including an electrically conductive material, at least one portion of the attachment system being connected to the anode of the electrical connection system and being removably linked to the sensor, at least one second portion of the attachment system being linked to the cathode of the electrical connection system and being removably linked to the sensor. 1. A radiation detector to be irradiated with nuclear particles , which comprises:an electrical connection system comprising an anode, and a cathode;a metal housing, inside of which at least one portion of said electrical connection system is positioned;a semi-conductor sensor comprising a first electrical circuit, said sensor being encapsulated in the housing; andan attachment system configured to attach the sensor to the housing, said attachment system comprising an electrically conductive material, at least one first portion of the attachment system being connected to the anode of the electrical connection system and being removably linked to said sensor, at least one second portion of the attachment system being connected to the cathode of the electrical connection system and being removably linked to said sensor and wherein the first portion of the attachment system comprises a moveable component.2. The detector according claim 1 , wherein the first portion of the attachment system is linked in a removable manner to the anode of the electrical connection system and wherein the second portion of the attachment system is linked in a removable manner to the cathode of the electrical ...

X-Ray Detectors of High Spatial Resolution

An apparatus, system and method suitable for detecting X-ray are disclosed. In one example, the apparatus comprises: an X-ray absorption layer and a mask; wherein the mask comprises a first window and a second window, and a portion between the first window and the second window; wherein the first and second windows are not opaque to an incident X-ray; wherein the portion is opaque to the incident X-ray; and wherein the first and second windows are arranged such that charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the first window and charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the second window do not spatially overlap. 1. An apparatus suitable for detecting X-ray , comprising:an X-ray absorption layer and a mask;wherein the mask comprises a first window and a second window, and a portion between the first window and the second window;wherein the first and second windows are not opaque to an incident X-ray;wherein the portion is opaque to the incident X-ray; andwherein the first and second windows are arranged such that charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the first window and charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the second window do not spatially overlap.2. The apparatus of claim 1 , wherein the first window and the second window are nearest neighbors.3. The apparatus of claim 1 , wherein the apparatus further comprises a first set of one or more electrodes configured to receive a signal from the incident X-ray propagating through the first window claim 1 , and a second set of one or more electrodes configured to receive a signal from the incident X-ray propagating through the second window.4. The apparatus of claim 3 , wherein receiving the signal comprises collecting charge carriers generated by the incident X-ray.5. The apparatus of claim 1 , wherein ...

AMPLIFIER AND RADIATION DETECTOR

In a preamplifier (amplifier) for the radiation detector, an interconnection layer connected to the bonding pad forms one electrode of a feedback capacitor. Since there is no wiring for connecting the bonding pad and capacitor, a parasitic capacitance caused by the wiring will not be generated. Moreover, the capacitor is arranged below the bonding pad with a conductive layer serving as the other electrode, so that the feedback capacitance of the capacitor is included in the parasitic capacitance between the interconnection layer and the substrate. Compared to the conventional case, an amount of capacitance corresponding to the parasitic capacitance caused by wiring and the feedback capacitance for the capacitor is reduced from the input capacitance. Thus, the input capacitance for the amplifying circuit is reduced. 1. An amplifier , comprising:a semiconductor substrate;an amplifying circuit;a feedback capacitor connected in parallel to the amplifying circuit;a reset switch integrated on the semiconductor substrate and connected in parallel to the amplifying circuit;a first conductive layer directly or indirectly connected to an external bonding wire for signal input;a second conductive layer arranged on a side more toward the semiconductor substrate than the first conductive layer; anda insulating layer interposed between the first conductive layer and the second conductive layer, whereinthe feedback capacitor is so configured that the insulating layer serves as a dielectric while the first conductive layer and the second conductive layer serve as a pair of electrodes,the first conductive layer is connected to an input terminal of the amplifying circuit, andthe second conductive layer is connected to an output terminal of the amplifying circuit.2. The amplifier according to claim 1 , further comprisinga bonding pad for connection to the external bonding wire, whereinthe first conductive layer has one part interposed between the bonding pad and the semiconductor ...

Radiation sensor

A radiation sensor that may include a first transistor, a first isolated conductive structure that comprises a floating gate of the first transistor, a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal, a second transistor, a second isolated conductive structure that comprises a floating gate of the second transistor, and a second group of radiation sensing diodes that are coupled to each other, wherein the second group is configured to convert sensed radiation that is sensed by the second group to a second output signal, and to change a state, under a control of the first transistor, of the second isolated conductive structure using the second output signal.

Semiconductor X-ray Detector

Disclosed herein is an apparatus comprising: a radiation absorption layer comprising an electrode; a counter; a controller configured to cause a number registered by the counter to change, in response to an absolute value of an electrical signal on the electrode equaling or exceeding an absolute value of a second threshold during a time delay that is started from a time at which the absolute value of the electrical signal equals or exceeds an absolute value of a first threshold. 1. An apparatus comprising:a radiation absorption layer comprising an electrode;a counter;a controller configured to cause a number registered by the counter to change, in response to an absolute value of an electrical signal on the electrode equaling or exceeding an absolute value of a second threshold during a time delay that is started from a time at which the absolute value of the electrical signal equals or exceeds an absolute value of a first threshold.2. The apparatus of claim 1 , further comprising a capacitor module electrically connected to the electrode claim 1 , wherein the capacitor module is configured to collect charge carriers from the electrode.3. The apparatus of claim 1 , wherein the absolute value of the second threshold is greater than the absolute value of the first threshold.4. The apparatus of claim 1 , further comprising a meter claim 1 , wherein the controller is configured to cause the meter to measure the electrical signal upon expiration of the time delay.5. The apparatus of claim 4 , wherein the controller is configured to determine an energy of the radiation particles based on a value of the electrical signal measured upon expiration of the time delay.6. The apparatus of claim 1 , wherein the controller is configured to connect the electrode to an electrical ground.7. The apparatus of claim 1 , wherein a rate of change of the electrical signal is substantially zero at expiration of the time delay.8. The apparatus of claim 1 , wherein a rate of change of the ...

PROCESSING CIRCUIT AND SIGNAL PROCESSING METHOD OF SAMPLING CIRCUIT

The disclosure provides a processing circuit adapted to read out a sensing voltage of an X-ray sensor and a signal processing method of a sampling circuit. The processing circuit includes an amplifier and the sampling circuit. An inverting input terminal of the amplifier is coupled to the X-ray sensor. The sampling circuit is coupled to an output terminal of the amplifier. The sampling circuit obtains a first voltage, a second voltage, and a sampling voltage of the X-ray sensor in different periods. The sampling voltage is between the first voltage and the second voltage. In the readout period, the sampling circuit subtracts the second voltage from the sampling voltage to obtain a third voltage, subtracts the second voltage from the first voltage to obtain a fourth voltage, and divides the third voltage by the fourth voltage to read out the sensing voltage of the X-ray sensor. 1. A processing circuit , adapted to read out a sensing voltage of an X-ray sensor , wherein comprises:an amplifier comprising an inverting input terminal, a non-inverting input terminal, and an output terminal, wherein the inverting input terminal of the amplifier is coupled to the X-ray sensor; anda sampling circuit coupled to the output terminal of the amplifier,wherein the sampling circuit obtains a first voltage, a second voltage, and a sampling voltage of the X-ray sensor in different periods, and the sampling voltage is between the first voltage and the second voltage, andwherein the sampling circuit subtracts the second voltage from the sampling voltage to obtain a third voltage in a readout period, subtracts the second voltage from the first voltage to obtain a fourth voltage, and divides the third voltage by the fourth voltage to read out the sensing voltage of the X-ray sensor.2. The processing circuit according to claim 1 , wherein the sampling circuit obtains the sampling voltage claim 1 , the first voltage claim 1 , and the second voltage in sequence in a first sampling period ...

DEVICE FOR VIEWING PHOTONICS RADIATION, SUITABLE FOR WORKING IN A RADIOACTIVE ENVIRONMENT, AND CAMERA USING SUCH A DEVICE

A device for capturing an image in a radioactive environment, includes: image detectors (); an area () for capturing the images; a heating area () for regenerating the detectors; an area () for cooling the detectors; and a support () for moving the detectors successively into each area. A camera including such a device and especially a camera for creating an image of a gamma-ray source in a nuclear environment is also described. 1102011132123172528. Device (; ) for capturing an image in a radioactive environment , which comprises at least two image detectors (-; -) , and regeneration means (; ,) for alternately regenerating each detector , preferably by heating.3172529182629. Device according to claim 2 , wherein the regeneration area advantageously comprises an area (; claim 2 , ) for heating the detectors and an area (; claim 2 , ) for cooling the latter after heating.414. Device according to claim 2 , wherein the support is a rotational support ().524. Device according to claim 2 , wherein the support is a translational support ().6. Device according to claim 2 , wherein the device comprises three detectors claim 2 , such that a first detector is in the capture area claim 2 , while a second detector claim 2 , previously in the capture area claim 2 , is in the heating area claim 2 , while a third detector claim 2 , previously heated claim 2 , is in the cooling area.7. Device according to claim 5 , wherein the device comprises claim 5 , in the following order:{'b': '25', 'a first heating area ();'}{'b': '26', 'a first cooling area ();'}{'b': '27', 'a capture area ();'}{'b': '28', 'a second heating area (); and,'}{'b': '29', 'a second cooling area ().'}8. Device according to claim 1 , wherein the device is suitable for capturing an image of gamma radiation.9301020. Camera () claim 1 , which comprises a capture device ( claim 1 , ) according to .10333132313436202720. Camera according to claim 9 , which comprises a body () defining two compartments ( claim 9 , ) claim ...

ENERGY WEIGHTING OF PHOTON COUNTS FOR CONVENTIONAL IMAGING

A System for image processing, comprising an input interface (IN) for receiving energy resolved count data generated by a photon-counting detector (PCD) with at least 2 energy bin but preferable more than two. A count data transformer (DT) of the system is configured to perform a transformation operation to transform the energy resolved count data into transformed count data, the operation including applying one or more weights to the count data, the weights previously obtained based on i) calibration image data for the or a photon-counting detector and ii) calibration image data for an energy integrating detector. A data convertor component (CC) is configured to convert the transformed count data into through-material path length data. The system allows emulating an energy integrating detector. 1. A system for image processing for emulating an energy integrating detector , comprising:an input interface for receiving energy resolved count data generated by a photon-counting detector;a count data transformer configured to perform a transformation operation to transform the energy resolved count data into transformed count data, wherein one or more weights is applied to the count data, the weights being based on calibration image data for the photon-counting detector and the calibration image data for an energy integrating detector;a data convertor configured to convert the transformed count data into through-material path length data; andan output interface for outputting the through-material path length data.2. The system according to claim 1 , wherein the data convertor is configured to convert the transformed count data into the through-material path length data based on the one or more weights as applied to the energy resolved count data.3. The system according to claim 1 , wherein the one or more weights are the same for all pixels of the photon-counting detector.4. The system according to claim 1 , further comprising a reconstructor configured to reconstruct ...

MEDICAL SCAN NATURAL LANGUAGE ANALYSIS SYSTEM, METHODS AND ARTICLES

A medical report natural language model includes an artificial neural network implemented via the processor and is trained based a plurality of medical reports wherein each of the medical reports is mapped to at least one medical code of a plurality of medical codes and further based a plurality of medical condition terms from a plurality of alias mapping pairs, wherein each of the plurality of medical condition terms are unique, wherein each of the plurality of medical condition terms indicates a corresponding medical condition and wherein each of the plurality of alias mapping pairs includes a one of the plurality of medical condition terms and a corresponding single one of the plurality of medical codes that is a deterministic function of the one of the plurality of medical condition terms and wherein the plurality of alias mapping pairs includes two or more alias mapping pairs that map a corresponding two or more of the plurality of medical condition terms to a same one of the plurality of medical codes. A system operates by determining a first medical code of the plurality of medical codes utilizing the medical report natural language model on the first medical report by: recognizing, via the artificial neural network of the medical report natural language model, a first medical condition term of the plurality of medical condition terms in the first medical report; and determining the first medical code of the plurality of medical codes, based on the plurality of alias mapping pairs, wherein the determining the first medical code includes identifying a first alias mapping pair of the plurality of alias mapping pairs that pairs the first medical condition term deterministically to the first medical code; and mapping the first medical code of the plurality of medical codes and the first medical condition term of the plurality of medical condition terms to a first medical scan corresponding to the first medical report. 1. A medical scan natural language analysis ...

PHOTODETECTOR AND COMPUTED TOMOGRAPHY APPARATUS

A photodetector according to an embodiment includes: a photodetector element unit including a first cell array including a plurality of first cells arranged in an array and a second sell array including a plurality of second cells arranged in an array, each of the first and second cells including a photoelectric conversion element, the second cell array being arranged to be adjacent to the first cell array; a first pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the first cell array; a second pulse height analyzer unit analyzing a pulse height of an electrical signal outputted from the second cell array; and a signal processing unit determining non-uniformity of a distribution of photons entering the first and second cell arrays using an output signal of the first pulse height analyzer unit and an output signal of the second pulse height analyzer unit. 113.-. (canceled)14. A photodetector comprising:a first array in which a plurality of first photoelectric conversion elements are arranged in an array;a second array in which a plurality of second photoelectric conversion elements are arranged in an array, the second array being arranged to be adjacent to the first array;a first electrode electrically connected to the first array and a first analyzer analyzing a pulse height of an electrical signal outputted from the first array; anda second electrode electrically connected to the second array and a second analyzer analyzing a pulse height of an electrical signal outputted from the second array.15. The photodetector according to claim 14 , further comprising a signal processing unit that determines a distribution of photons entering the first array and the second array using an output signal of the first analyzer and an output signal of the second analyzer.16. The photodetector according to claim 14 , further comprising a signal processing unit that receives an output signal of the first analyzer and an output signal of the ...

Radiation detection element, and method for manufacturing same

Provided is a radiation detection element, including: a plurality of electrode portions on a surface of a substrate; and an insulating portion between the electrode portions, the substrate being made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein the tellurium oxide layer has a thickness of 100 nm or less on a 500 nm inner side from an end portion of the insulating portion between the electrode portions. The radiation detection element has higher adhesion of the electrodes, and does not result in an element performance defect caused by insufficient insulation between the electrodes, even if the radiation detection element has a narrower distance between the electrode portions in order to obtain a high-definition radiographic image.