Verfahren zur Herstellung einer lithographischen Druckform nach dem Verfahren der Silbersalz-Diffusionsübertragung

Zeitmodulierte stochastische Halbtonrasterung

Verfahren zur Herstellung einer Druckplatte unter Verwendung des Silbersalz-Diffusion-Übertragungsverfahrens.

Verfahren zur Herstellung einer Aluminiumfolie zur Verwendung als Träger in lithographischen Druckplatten

Verfahren zur Herstellung von Druckformen

Verfahren zur Herstellung einer Druckplatte nach dem Silbersalz-Diffusionübertragungsverfahren

Verfahren zur Herstellung eines photographischen Materials

IMAGE-RECEPTIVE MATERIAL FOR SILVER SALT DIFFUSION-TRANSFER PHOTO GRAPHIC PROCESS

... 1383411 Photographic material FUJI PHOTO FILM CO Ltd 27 March 1972 [26 March 1971] 14326/72 Heading G2C An image-receiving sheet for the silver salt diffusion transfer process is prepared from a sheet of an alkali-impermeable polymer by (i) rendering the surface alkali-permeable to a depth of 0.3-10Á, and (ii) simultaneously or subsequently incorporating diffusion transfer nuclei in the alkali-permeable surface portion such that the remaining alkaliimpermeable portion is substantially free of diffusion-transfer nuclei. Preferably the polymer sheet, which may optionally be on a support (e.g. paper), consists of a cellulose ester, polyvinyl acetal, polyester, polystyrene or polyvinyl acetate and the surface portion is produced hydrolysis or oxidation. The image sheets may be converted to printing plates by etch-bleaching.

METHOD OF MAKING A LITHOGRAPHIC PRINTING PLATE

... 1433121 Photographic processes for producing lithographic plates FUJI PHOTO FILM CO Ltd 26 Feb 1973 [25 Feb 1972] 9436/73 Headings G2C and G2M Lithographic plates are produced by (i) forming on a support having an oleophilic resin surface a hydrophilic layer containing a hydrophilic resin, a resin which becomes hydrophilic on treatment with an alkaline developer or an oleophilic resin which becomes hydrophilic on brushing, the resin not being gelatin or nitrocellulose, the layer being formed by applying the resin dissolved or dispersed in an organic median which swells, softens or dissolves the resin surface, (ii) applying (a) a hydrophilic image-receiving layer for diffusion transfer or (b) a silver halide emulsion layer or both (a) and (b) in either order, (iii) forming a silver image (1) when (a) but not (b) is present by diffusion transfer, (2) when (b) but not (a) is present by imagewise exposure and development, (3) when (a) and (b) are present and (a) is uppermost, by diffusion transfer ...

COMPOSITIONS USEFUL FOR PREPARING PHOTOGRAPHIC DIFFUSION TRANSFER IMAGE RECEIVING MATERIALS AND LITHOGRAPHIC PRINTING PLATES

... 1379841 Pigment / polymer compositions EASTMAN KODAK CO 4 Jan 1972 [4 Jan 1971] 231/72 Heading C3P [Also in Divisions G2 and B6] Compositions useful in lithographic printing applications (see Divisions G2 and B6) comprise (a) a film-forming copolymer of an amide of acrylic or methacrylic acid and a monomer which contains an active methylene group (i.e. a -CH 2 - group bonded directly to two electron-withdrawing groups) in an aliphatic chain, the copolymer containing at least 0À1% by weight of said active methylene groups, (b) colloidal silica and (c) a pigment. The monomer containing an active methylene group is suitably an acrylic or methacrylic ester containing the grouping -CO-CH 2 -CO- in the alcohol moiety thereof; a preferred copolymer (a) is a copolymer of 80-98% by weight acrylamide or methacrylamide and 2-20% by weight 2- acetoacetoxyethyl methacrylate. A preferred pigment is titanium dioxide; other pigments disclosed are kaolin or china clay, calcium silicate and barium sulphate ...

MATERIAL FOR PREPARING PRINTING PLATE

... 1359359 Photographic material FUJI PHOTO FILM CO Ltd 6 Oct 1971 [7 Oct 1970] 46533/71 Heading G2C A material for preparing a photo-lithographic printing plate comprises in order (a) a support having an oleophilic surface, (b) a layer consisting substantially only of gelatine and/or nitrocellulose, (c) a hydrophilic image-receiving layer for the silver salt diffusion transfer process containing precipitating nuclei or nuclei precursors in a binder, and optionally (d) a silver halide emulsion layer. A silver image is formed photographically in layer (c) by the silver salt diffusion transfer process, and the layer etched bleached, after removing layer (d) if present, to form the printing plate. In Comparative Examples layer (c) is omitted or comprises a mixture of nitrocellulose and an ethylene glycol/triethylene glycol terephthalate polyester.

Process for the manufacture of printing plates

... 998,447. Photographic processes. GEVAERT PHOTO-PRODUCTEN N.V. July 17, 1963 [July 18,1962], No. 28278/63. Addition to 913,491. Heading G2C. Positive images are transferred by the silver salt diffusion transfer process onto a metal plate and after-treated as in the parent Specification, the improvement being that the processing liquid used for the transfer contains lithium hydroxide.

METHOD FOR THE PREPARATION OF PRINTING PLATES

... 1,241,662. Planographic printing plates. AGFA GEVAERT. June 19, 1968 [April 26, 1968; June 19, 1967], Nos.28776/68 and 28777/68. Divided out of 1,241,661. Headings G2C and G2M. Planographic printing plates are prepared from a photographic material comprising a support sheet and a silver halide emulsion layer one uncovered surface of the material being provided by the emulsion layer or a superposed hydrophilic colloid layer by (1) forming an image concentrated at said uncovered surface by the silver complex diffusion transfer process; (2) hardening the layer providing said outer surface; (3) rendering the diffusion transfer image ink-receptive (before, during or after step (2)), and (4) inking. The image-bearing material is preferably converted to a printing plate by the process of Specification 1,241,661. The material preferably contains an antihalation layer, and the colloid layer preferably contains a pigment (e.g. Ba SO 4 , TiO 2 , china clay or SiO 2 ), colloidal SiO 2 , an inorganic ...

LITHOGRAPHIC PLATES AND THEIR PREPARATION

... 1453932 Photographic silver halide diffusion transfer material MINNESOTA MINING & Mfg CO 28 Nov 1973 [4 Dec 1972] 55953/72 Heading G2C A light-sensitive plate capable of being converted into a lithographic printing plate comprises a support which has, or to which has been bonded a layer having, an oleophilic surface, a liquid permeable hydrophilic layer bonded to the oleophilic surface and containing physical development nuclei, and an unhardened layer of a direct-positive silver halide emulsion over the hydrophilic colloid layer, the direct-positive emulsion being one whose ability to. provide a direct-positive image is not impaired by subsequent development in a silver salt diffusion transfer developer and being one which is capable of providing a negative silver diffusion transfer image in the hydrophilic colloid layer, the hydrophilic colloid layer being capable of being made firable at least at the interface between the hydrophilic colloid layer and the oleophilic surface and disrupted ...

Imaging Process.

Process for recording information by image-wise deposition of hydrosol particles through chemiphoresis wherein said particles are coagulated imagewise onto an image-wise pattern defined by metallic cations which act as a coagulant for a hydrosol, the resulting pattern of deposited hydrosol particles e.g. deposited on an aluminium support being suited for use as planographic printing plate.

PROCEDURE FOR THE PRODUCTION OF BASE MATERIAL FOR LITHOGRAPHIC PRINTING PLATES

DIFFUSION TRANSFER RECEIVING ELEMENT

LITHOGRAPHIC MATERIAL

PHOTOSENSITIVE PRINTING PLATE

PRODUCTION OF PLANOGRAPHIC PRINTING PATTERNS

A b s t r a c t A process of producing a planographic printing plate according to the silver complex diffusion transfer process is described wherein a light-sensitive silver halide material is exposed and treated while in contact with an! aluminium sheet or foil or supported aluminium layer serving as image receiving material, with an aqueous alkaline processing liquid to cause development of the exposed silver halide, to cause unexposed and undeveloped silver halide to become complexed by a silver halide complexing agent and to transfer said complexed silver halide to the said image-receiving material where it is converted to a silver image in the presence of development nuclei characterised in that the said aqueous alkaline processing liquid contains at least one compound of the formula : MOOC-X-COOM wherein X is either -CH=CH, , , or an M is an alkali metal.

LITHOGRAPHIC PRINTING

LITHOGRAPHIC ALUMINIUM OFFSET PRINTING PLATE MADE ACCORDING TO THE DTR-PROCESS

Method for making lithographic aluminium offset printing plates according to the DTR-process by photo-exposing a photosensitive monosheet layer assemblage comprising a hydrophilic aluminium foil, a water-swellable intermediate layer comprising a non-proteinic hydrophilic film-forming polymer, and a silver halide emulsion layer, applying an aqueous alkaline solution thereto in the presence of a developing agent and a silver halide solvent, allowing to reduce the photo-exposed silver halide, allowing the unreduced silver halide or complexes thereof to diffuse to said aluminium foil to form a silver image thereon, and separating said emulsion layer and said intermediate layer from the imaged aluminium foil. The invention also relates to the photosensitive monosheet layer assemblage used for making such printing plates.

LITHOGRAPHIC ALUMINIUM OFFSET PRINTING PLATE MADE ACCORDING TO THE DTR-PROCESS

Procédé pour la production de clichés d'impression

Verfahren zur Herstellung von Druckformen

Verfahren zur Herstellung von Vervielfältigungen durch Erwärmen einer Druckform

Procédé pour la production de clichés d'impression lithographiques perfectionnés

Procédé pour la production de clichés d'impression

Verfahren zur Herstellung von Flachdruckformen

Verfahren zur Herstellung von Druckformen

Zur Herstellung einer Lithodruckplatte geeignete Platte und Verfahren zu ihrer Herstellung

PHOTOSENSITIVE DRUCKERPLATTE.

Verfahren zur Herstellung von Druckformen mit Hilfe von Schichten, die ganz oder teilweise aus hochpolymeren Stoffen bestehen

Vorrichtung zum Herstellen von Vervielfältigungen

Procédé d'enregistrement respectivement de reproduction d'un motif

Machine pour effectuer le transfert sur une feuille de cliché des surfaces non exposées d'un négatif photographique

METHOD FOR MAKING A LITHOGRAPHIC PRINTING PLATE.

Photolithographic receptor material, process for the production thereof, and the use thereof

Preparation of reproductions by means of heat

PHOTOGRAPHIC PRODUCTS AND PROCESSES

Forms of impression in strongly polymerized substances

Photolithographic receptive sheet with hydrophilic surface - having silica-treated rutile anchoring layer for light sensitive printing plate prodn.

Lithographic printing plate prodn. - using surfactant in fixing bath to prevent background fog

METHOD OF PREPARATION OF PLATES Of LITHOGRAPHY

PROCESS FOR PRODUCING A PHOTOLITHOGRAPHIC PRINTING PLATE

METHOD OF PRODUCING PHOTOGRAPHIC PRINTING PLATES

LITHOGRAPHIC PLATES AND THEIR PREPARATION

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER AND COLOR FILTER USING SAME

XANTHENE-BASED COMPOUND, COLORANT COMPOSITION COMPRISING THE SAME AND RESIN COMPOSITION COMPRISING THE SAME

WERKWIJZE VOOR HET MAKEN VAN LITHOGRAFISCHE CLICHES

Lithographic printing plate with gelatin layers having pH values below isoelectric point

Disclosed is a photosensitive element for the production of lithographic printing plates improved in printing endurance comprising a support, a physical development nuclei layer, and at least one gelatin-containing layer including a silver halide emulsion layer disposed under said nuclei layer, which is adapted to the silver complex diffusion transfer process to utilize the transferred silver image on said nuclei layer as ink-receptive areas, all of the gelatin-containing layers having a pH value below the isoelectric point of the gelatin used in each layer. Further improvement can be attained by using a photographic gelatin and a low molecular weight gelatin in at least one of said gelatin-containing layers.

Platemaking process with heat developable silver salt diffusion transfer

A process for simply and rapidly producing a lithographic printing plate is disclosed, which comprises image-wise exposing a silver halide photosensitive material comprising a substantially water-insoluble basic metal compound and optionally having a physical-development nucleus layer on the external surface thereof, superposing the silver halide photosensitive material either after or simultaneously with the image-wise exposure on an image-receiving material which contains a complex-forming compound and has a physical-development nucleus layer on the external surface thereof or on a sheet which contains a complex-forming compound, in such a manner that the coating side of the photosensitive material is in contact with the coating side of the image-receiving material or the sheet, heating the superposed materials in the presence of a reducing agent and water, and subsequently separating both materials from each other to form a silver image as an ink-receptive area on the physical-development ...

Method for making lithographic printing plates according to the silver salt diffusion transfer process

The present invention provides a method for making an offset printing plate according to the silver salt diffusion transfer process comprising the steps of: (a) image-wise exposing an imaging element comprising (i) a hydrophilic base, (ii) an image receiving layer containing physical development nuclei, (iii) an intermediate layer, and (iv) a silver halide emulsion layer, (b) applying an aqueous alkaline solution to the imaging element in the presence of (a) developing agent(s) and (a) silver halide solvent(s) to form image-wise in said image receiving layer a silver image, (c) treating the imaging element to remove the layer(s) on top of said image receiving layer, characterized in that said imaging element has been stored before image-wise exposure in a surrounding having at 22 DEG C. a relative humidity between 20% and 50%. According to the present invention there is also provided a package of the imaging element, making said imaging element suitable for use in the above defined method ...

Method for making a lithographic printing plate

There is provided a method for making a lithographic printing plate from an original containing continuous tones comprising the steps of: screening said original to obtain screened data scan-wise exposing a lithographic printing plate precursor according to said screened data, said lithographic printing plate precursor having a surface capable of being differentiated in ink accepting and ink repellant areas upon said scan-wise exposure and an optional development step and optionally developing a thus obtained scan-wise exposed lithographic printing plate precursor, characterized in that said screening is a frequency modulation screening. The print results of a thus obtained printing plate can be previewed using simple proofing techniques. ...

Size modulated stochastic screening

A method for making by phototypesetting a lithographic printing plate according to the silver salt diffusion transfer process

A processing solution and method for making a lithographic offset plate by the silver salt diffusion transfer process

Imaging element for making an improved printing plate according to the silver salt diffusion transfer process

LITHOGRAPHIC MATERIAL

PURPOSE: To improve ink receptivity and to prevent backgroud stains by incorporating fine particles in a silver halide emulsion layer, and CMC in the binder of a physical development mucleus layer in a lithographic material applying a silver salt diffusion transfer method. CONSTITUTION: A silver halide emulsion layer contg. silver chloride, silver bromide, etc. and fine particles having an average particle diameter of 1W10μm is formed on an antihalation layer formed on a support. As the fine particles of PMMA or alumina of the like are used, preferably, in an amt. of 1.5W15mg/dm2 of the emulsion layer. This emulsion layer is coated with a dispersion obtained by dispersing physical development nuclei, such as Sb or Bi, into a hydrophilic binder cotg. carboxymethyl cellulose (CMC) having an average polymn. degree of ≤700 to form a physical development nucleus layer. An intended lithographic material can be thus obtained. COPYRIGHT: (C)1985,JPO&Japio ...

Verfahren zur Herstellung von Druckplatten mit Diffusionsübertragung von wärmeentwickelbarem Silbersalz

Lichtempfindliches Blatt mit Schichtträger aus Aluminiumlegierung und lichtempfindliches Silberhalogenidmaterial, dass dieses verwendet

Bildelement und Verfahren zur Herstellung einer Druckplatte nach dem Silbersalz-Diffusionübertragungsverfahren

Bildelement und Verfahren zur Herstellung lithographischen Druckplatten nach dem Silbersalz-Diffusionübertragungsverfahren

Bildelement zur Herstellung einer lithographischen Druckplatte

Bildelement und Verfahren zur Herstellung einer Druckplatte nach dem Silbersalz-Diffusionübertragungsverfahren

Bildelement und Verfahren zur Herstellung einer lithographischen Druckplatte durch das Silbersalz-Diffusion-Übertragungsverfahren

Verfahren zru herstellung eines photographischen Materials, das zur Verwendung in Phototypieanwendungen geeignet ist

Verfahren zur Herstellung einer Druckplatte unter Verwendung des Silbersalz-Diffusion-Übertragungsverfahrens.

Photographisches Silberhalogenidmaterial

GAPPED CORE REACTOR

... 1,243,430. Transformers. BRUCE PEEBLES INDUSTRIES Ltd., and J. G. WATSON. 6 March, 1970 [7 March, 1969], No. 12254/69. Heading H1T. A reactor core having a unit comprising stacks of laminations separated by gaps, individual stacks of laminations 14 having flat lamination surfaces which are shielded from fringing flux by local packets of laminations 15 with their edges on flat lamination surfaces through which fringing flux would otherwise pass. The stacks of laminations may be constructed with the centre of each side of a stack consisting of packets of laminations extending generally radially of the core limb (Figs. 4, 5, not shown).

LITHOGRAPHIC PLATE IMAGEABLE BY DIFFUSION TRANSFER

... 1527664 Lithographic plates formed by silver salt diffusion transfer MINNESOTA MINING & MFG CO 20 April 1976 [21 April 1975] 15961/76 Heading G2C A lithographic plate having an image formed by the silver salt diffusion transfer process has a metal support which has been treated with an aqueous solution of a water soluble fluoride compound of formula Xi X2 F6 in which X 1 is H, an alkali metal, an alkaline earth metal or NH 4 and X 2 is Ti, Zr, or Hf. Compounds specified are potassium hexofluoratitanate (preferred), sodium hexofluorozirconate, potassium hexafluorohafnate and ammonium hexafluorotitanate. The metal support e.g. Cu, Zn or Al, may be treated with chromic acid prior to the fluoride treatment. The deposited silver image is rendered oleophilic.

PROCEDURE FOR THE PRODUCTION OF LITHOGRAPHIC PRINTING FORMS

PHOTOLITHOGRAPHIC ELEMENT CONTAINING A SILVER-RECEPTIVE POLYALDEHYDE-CONTAINING RECEIVING LAYER

IMPROVEMENTS IN OR RELATING TO PRINTING PLATE PRECURSORS

PHOTOLITHOGRAPHIC ELEMENT CONTAINING A SILVER- RECEPTIVE POLYALDEHYDE-CONTAINING RECEIVING LAYER

METHOD FOR PREPARING LITHOGRAPHIC PRINTING PLATE

PROCESS FOR DEFINED ETCHING OF SUBSTRATES

PE-0212 TITLE PROCESS FOR DEFINED ETCHING OF SUBSTRATES A process is described for defined etching of holes using a silver mask formed by silver diffusion transfer imaging.

Process of recording of information by means of a material sensitive to heat and the pressure

Process of transfer of layers to the nonexposed parts of a layer of money halide

Process for the production of printing blocks

IMAGE-RECEPTIVE MATERIAL FOR SILVER SALT DIFFUSION-TRANSFER PHOTO GRAPHIC PROCESS

Silver complex diffusion transfer lithographic printing plates - with receptor layer contg. a quaternary salt of a polyvinyl cpd. with pendant heterocyclic gps. to improve ink receptivity of image

Photosensitive printing plate

BLOCK CO-POLYMER

Water soluble photosensitive resin composition, film and circuit board using the same

A water soluble photosensitive resin composition includes a polymer containing oxazolinyl, a photosensitive monomer, and a photo initiator. All of the polymer containing oxazolinyl, photosensitive monomer and photo initiator are water soluble or water dispersible. Both of the polymer containing oxazolinyl and photosensitive monomer have carbon-carbon double bond. A film making by the water soluble photosensitive resin composition, and a circuit board using the film are also provided.

MATERIAL FOR LITHOGRAPHIC PRINTING PLATE.

On décrit un matériau pour cliché d'impression lithographique permettant d'obtenir un cliché d'impres-sion ne donnant pas lieu à pelage du film même après l'impression d'un grand nombre de copies de mêmes si l'on utilise une encre d'impression spéciale telle qu'une encre traitée par les rayons ultraviolets. Le matériau pour cliché d'impression comprend un film de polyester soumis à un traitement d'hydrophilisation par application d'un copolymère organique comme support et au moins une couche inférieure, au moins une couche d'émulsion contenant un halogénure d'argent et une couche réceptrice d'image contenant des germes de développement physique appliquées sur le support dans cet ordre, caractérisé en ce que la couche inférieure la plus en dessous contiguë au support contient un latex de résine époxyde du type bisphénol.

Method for making an offset printing plate according to the silver salt diffusion transfer process

The present invention provides a method for making an offset printing plate according to the silver salt diffusion transfer process comprising the steps of: image-wise exposing an imaging element comprising in the order given on a hydrophilic surface of a support (i) an image receiving layer containing physical development nuclei and (ii) a photosensitive layer comprising one or more photosensitive silver halide emulsions said photosensitive layer being in water permeable relationship with said image receiving layer, applying an aqueous alkaline solution to the imaging element comprising at least 0.05 mole/l of ascorbic acid as the main developer, at least 0.010 mole/l of an auxiliary developer of the class of the 1-phenyl-3-pyrazolidones and an aminoalcohol in an amount from 0.1 ml to 10 ml as silver halide solvent to form a silver image in said image receiving layer, treating the imaging element to remove the layer(s) on top of the image receiving layer, thereby exposing the imaged surface ...

Process for reducing sludge in diffusion transfer printing plates

A method of making a lithographic printing plate that comprises the steps of: (a) imagewise exposing a unitary, light sensitive material which consists of a support, at least one negative working light sensitive silver halide layer and a surface physical development nucleating layer, said construction containing a developing agent and electron transfer agent in one or more layers; (b) processing said printing plate in a diffusion transfer alkaline activator solution containing at least one aminocarboxylic acid complexing agent.

Panchromatic silver halide photographic element

Disclosed is a panchromatic silver halide photographic emulsion for use in DTR process which exhibits a high sensitivity, especially to blue light, a high contrast and a high resolving power and a photographic element containing said silver halide emulsion layer. Said emulsion contains a blue-sensitizing dye represented by the general formula [I]: [I] (wherein Z1, Z2, R1, R2, X1 and m are as defined before). Said emulsion may contain, as green- and red-sensitizing dyes, those represented by the general formula [II] and [III] to attain more effectively the objects: [II] [III] (wherein Z3, Z4, Z5, Z6, R3, R4, R5, R6, R7, R8, X2, X3 and m are as defined before). Said photographic element is an excellent ligtographic printing plate.

Kit of parts for making an alkaline processing liquid for processing a lithographic printing plate

A kit of parts for preparing an alkaline processing liquid for use in preparing a lithographic printing plate according to the silver salt diffusion transfer process, and comprising all necessary active compounds for preparing said alkaline processing liquid, said active compounds being contained in parts physically separated from each other, at least one of said parts comprising an inorganic alkali in solid form and at least one of said other parts comprising a hydrophobizing agent and being substantially free from inorganic alkali.

Method for making a printing plate according to the silver salt diffusion transfer process

A method for preparing an aluminium foil for use as a support in lithographic printing plates

PLANOGRAPHIC PRINTING PLATE PRECURSOR

A method for making an offset printing plate according to the silver salt diffusion transfer process

HARDENER OF GELATIN-CONTAINING LAYER

PURPOSE: To provide a nonvolatile gelatin cross-linking agent which is inexpensive, easy to prepare and soluble. CONSTITUTION: This gelatin hardener suitable to harden a gelatin-contg. photographic layer is shown by the formula. In the formula, X is selected from a group consisting of 0 and S or absent, Ys are independently selected from a group consisting of O, S and bonds, R1s are independently 10C aliphatic groups or the atoms necessary to complete a 5, 6 or 7-membered ring together with each other, -NR2R3 contains ≥12 skeletal carbons, and R2 and R3 are independently hydrogen or the groups selected from a group consisting of cyclic or acyclic groups or the atoms necessary to complete a heterocyclic ring together with each other. COPYRIGHT: (C)1995,JPO ...

Self-aligned permanent on-chip interconnect structure formed by pitch splitting

A method of fabricating an interconnect structure is provided. The method includes forming a hybrid photo-patternable dielectric material atop a substrate. The hybrid photo-patternable dielectric material has dual-tone properties with a parabola like dissolution response to radiation. The hybrid photo-patternable dielectric material is then image-wise exposed to radiation such that a self-aligned pitch split pattern forms. A portion of the self-aligned split pattern is removed to provide a patterned hybrid photo-patternable dielectric material having at least one opening therein. The patterned hybrid photo-patternable dielectric material is then converted into a cured and patterned dielectric material having the at least one opening therein. The at least one opening within the cured and patterned dielectric material is then filed with at least an electrically conductive material. Also provided are a hybrid photo-patternable dielectric composition and an interconnect structure.

Pattern formation method

According to one embodiment, a pattern formation method contains: forming first guides by changing a surface energy of an underlayer material by transferring a pattern of a photomask onto the underlayer material by exposure, and forming second guides by changing the surface energy of the underlayer material between the first guides by diffraction of exposure light generated from the exposure; applying a block copolymer containing a plurality of types of polymer block chains onto the underlayer material; and causing any one of the polymer block chains to form a pattern in accordance with the first and second guides by microphase separation of the block copolymer by a heat treatment.

Resist composition, resist film therefrom and method of forming pattern therewith

Provided is a resist composition, including (A) a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer, (B) a compound that when exposed to actinic rays or radiation, generates an acid, the compound being any of those of general formulae (I) and (II) below, (C) a resin containing at least either a fluorine atom or a silicon atom, and (D) a mixed solvent containing a first solvent and a second solvent, at least either the first solvent or the second solvent exhibiting a normal boiling point of 200° C. or higher.

Photosensitive Resin Composition and Light Blocking Layer Using the Same

Disclosed are a photosensitive resin composition that includes (A) a cardo-based resin including repeating units represented by the following Chemical Formulae 1 and 2, (B) reactive unsaturated compound, (C) a pigment, (D) an initiator, and (E) a solvent, and a light blocking layer using the photosensitive resin composition. In Chemical Formulae 1 and 2, each substituent is the same as defined in the specification.

Composition for forming resist underlayer film for lithography including resin containing alicyclic ring and aromatic ring

There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.

Chemically amplified positive resist composition and patterning process

A chemically amplified positive resist composition comprising (A) a substantially alkali insoluble polymer having an acidic functional group protected with an acid labile group, (B) an acid generator, and (C) a perfluoroalkyl ethylene oxide adduct or a nonionic fluorinated organosiloxane compound is coated, exposed to UV radiation having a wavelength of at least 150 nm, and developed. The composition has advantages of uniformity and minimized edge crown upon coating, and no scum formation after development.

Photo Patternable Coating Compositions of Silicones and Organic-Inorganic Hybrids

A negative-tone photo patternable coating composition containing: (1) at least one silicone or organic-inorganic hybrid resin with acid labile alkoxysilane groups which can be thermally decomposed into silanol groups at 80-160° C. in the presence of a catalytic amount of strong acid; (2) optionally, an organic/polymer with two or more trialkoxysilyl, alkyldialkoxysilyl, or dialkylalkoxysilyl functional groups; (3) a photoacid generator; (4) an acid quencher; (5) a flow control agent; and (6) at least one organic solvent. Methods of preparing the silicones and/or organic-inorganic hybrids and procedures of processing the photo patternable compositions are described.

Self-aligned permanent on-chip interconnect structure formed by pitch splitting

A hybrid photo-patternable dielectric material is provided that has dual-tone properties with a parabola like dissolution response to radiation. In one embodiment, the hybrid photo-patternable dielectric material includes a composition of at least one positive-tone component including a positive-tone polymer, positive-tone copolymer, or blends of positive-tone polymers and/or positive-tone copolymers having one or more acid sensitive positive-tone functional groups; at least one negative-tone component including a negative-tone polymer, negative-tone copolymer, or blends of negative-tone polymers and/or negative-tone copolymers having one or more acid sensitive negative-tone functional groups; at least one photoacid generator; and at least one solvent that is compatible with the positive-tone and negative-tone components.

Positive type photosensitive resin composition

Disclosed is a positive-type photosensitive resin composition which has excellent storage stability, particularly excellent sensitivity stability, and can be formed into a cured film having excellent adhesion onto a substrate when heated at 350° C. or higher or heated in the air. The positive-type photosensitive resin composition comprises (a) a polymer having, as the main component, at least one structure selected from the group consisting of a polyimide precursor structure, a polybenzoxazole precursor structure, and a polyimide structure, (b) a quinonediazide compound, (c) a silane coupling agent having a styryl group, (d) a silane coupling agent having an epoxy group, an oxetanyl group, a methacryloxy group, an acryloxy group, an amino group, an amide group or mercapto group and an alkoxysilyl group, and (e) a solvent.

Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication

An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.

Actinic ray-sensitive or radiation-sensitive resin composition, and resist film, pattern forming method, method for preparing electronic device, and electronic device, each using the same

An actinic ray-sensitive or radiation-sensitive resin composition capable of forming a hole pattern which has an ultrafine pore diameter (for example, 60 nm or less) and has an excellent cross-sectional shape with excellent local pattern dimensional uniformity; and a resist film, a pattern forming method, a method for preparing an electronic device, and an electronic device, each using the same, are provided. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin containing 30 mol % or more of a repeating unit (a) represented by the following general formula (I) based on all the repeating units; (B) a compound capable of generating an acid upon irradiation of actinic rays or radiation; and (G) a compound having at least one of a fluorine atom and a silicon atom, and further having basicity or being capable of increasing the basicity by an action of an acid:

Photocurable organopolysiloxane composition

Disclosed is a photocurable organopolysiloxane composition including (A) 100 parts by weight of diorganopolysiloxane having at least two silicon atoms having a hydroxyl group and/or hydrolyzable group attached thereto in one molecule; and (B) 0.1 to 30 parts by weight of a complex compound composed of titanium(meth)acrylate-trialkoxide and β-diketone. It will find use as a sealing agent, adhesive, coating material. It is particularly suitable for micro pars and precision molding on account of its good curability and very little cure shrinkage.

Planarization over topography with molecular glass materials

Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules.

POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD

A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask. 1. A polysiloxane composition comprising:a polysiloxane; and a nitrogen-containing heterocyclic ring structure; and', 'a polar group, an ester group or both., 'a first compound comprising2. The polysiloxane composition according to claim 1 , further comprising:a second compound that generates an acid by irradiation with an ultraviolet ray, heating or a combination thereof.3. The polysiloxane composition according to claim 1 , wherein the first compound is a compound comprising a polar group and an ester group.4. The polysiloxane composition according to claim 1 , wherein the first compound is a compound comprising claim 1 , as the polar group claim 1 , a hydroxyl group claim 1 , a carboxyl group or a combination thereof.7. The polysiloxane composition according to claim 1 , wherein the polysiloxane comprises a hydrolytic condensate of a compound represented by a following formula (S-1):{'br': None, 'sup': '5', 'sub': a', '4-a, 'RSiX\u2003\u2003(S-1)'}{'sup': 5', '5', 'A', 'A', '5', '5, 'wherein, in the formula (S-1), Rrepresents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cyano group, an alkenyl group or an aryl group, wherein a part or all of hydrogen atoms included in the alkyl group ...

PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATION OF THE SAME

A photosensitive resin composition includes (A) an alkali-soluble resin, (B) a polysiloxane, (C) an ethylenically unsaturated compound, (D) a photo-initiator, (E) a black pigment, and (F) a solvent. The alkali-soluble resin includes an unsaturated-group-containing resin obtained by subjecting a mixture containing (i) an epoxy compound having at least two epoxy groups and (ii) a compound having at least one carboxyl group and at least one ethylenically unsaturated group to polymerization. A weight ratio of the unsaturated-group-containing resin to the polysiloxane ranges from 0.1 to 3.0. Application of the photosensitive resin composition is also disclosed. 1. A photosensitive resin composition , comprising:(A) an alkali-soluble resin including an unsaturated-group-containing resin (A-1) obtained by subjecting a mixture containing (i) an epoxy compound having at least two epoxy groups and (ii) a compound having at least one carboxyl group and at least one ethylenically unsaturated group to polymerization;(B) a polysiloxane;(C) an ethylenically unsaturated compound;(D) a photo-initiator;(E) a black pigment; and(F) a solvent,wherein a weight ratio of said unsaturated-group-containing resin (A-1) to said polysiloxane (B) ranges from 0.1 to 3.0.2. The photosensitive resin composition as claimed in claim 1 , wherein said weight ratio ranges from 0.2 to 2.5.5. The photosensitive resin composition as claimed in claim 1 , wherein said polysiloxane (B) is obtained by subjecting a silane monomer claim 1 , a siloxane prepolymer claim 1 , or a combination of said silane monomer and said siloxane prepolyer to hydrolysis and partial condensation.6. The photosensitive resin composition as claimed in claim 1 , wherein said unsaturated-group-containing resin (A-1) is in an amount ranging from 30 to 100 parts by weight claim 1 , said polysiloxane (B) is in an amount ranging from 30 to 450 parts by weight claim 1 , said ethylenically unsaturated compound (C) is in an amount ranging ...

Positive Photosensitive Resin Composition, Photosensitive Resin Film Prepared by Using the Same, and Semiconductor Device Including the Photosensitive Resin Film

Disclosed are a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a first polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1 and a repeating unit represented by the following Chemical Formula 2, and having a thermally polymerizable functional group at at least one of the terminal end; (B) a dissolution controlling agent including a novolac resin including a repeating unit represented by the following Chemical Formula 4; (C) a photosensitive diazoquinone compound; (D) a silane compound; (E) an acid generator; and (F) a solvent, a photosensitive resin film prepared using the same, and a semiconductor device including the photosensitive resin film.

Silicon Compound, Condensation Product, Resist Compostion and Pattern Formation Method

A silicon compound according to the present invention is represented by the general formula (1). This silicon compound can be easily synthesized by using a hydrolysable silicon compound such as alkoxysilane and has, in its molecule, a hydrolysable group e.g. alkoxy group and a photoacid generating group capable of being dissociated to generate an acid by irradiation with a high-energy ray. 7. A condensation product obtained by condensation of the silicon compound according to .8. A composition comprising the condensation product according to and a solvent.9. A pattern formation method claim 7 , comprising:{'claim-ref': {'@idref': 'CLM-00008', 'claim 8'}, 'a first step of forming a film by applying the composition according to to a substrate and drying the applied composition;'}a second step of exposing the film to a high-energy ray through a photomask of predetermined pattern; anda third step of forming a resist pattern by dissolving an exposed unexposed portion of the film with a developer and thereby transferring the pattern of the photomask to the film. The present invention relates to a novel silicon compound, a condensation product obtained by hydrolysis and condensation of the silicon compound, a resist composition containing the condensation product and a pattern formation method using the resist composition.There has been an advance toward fine resist patterning by lithography for high integration of LSI devices. The lithography is a technique of applying a photosensitive material (photoresist, sometimes simply referred to as “resist”) to a surface of a substrate, exposing the resist into a desired pattern through a photomask or reticle, developing the exposed portion of the resist with a developer and thereby forming a pattern of the resist (sometimes simply referred to as “pattern”) on the substrate due to a difference in developer solubility between the exposed and unexposed portions of the resist.The application of shorter-wavelength exposure light ...

Silicon-containing resist underlayer film-forming composition and patterning process

The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process. R 1 m0 B(OH) m1 (OR) (3-m0-m1)   (1) R 10 m10 R 11 m11 R 12 m12 Si(OR 13 ) (4-m10-m11-m12)   (2)

CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM

A chemically amplified negative resist composition is provided comprising (A) a resin having a crosslinking group, (B) a crosslinker, (C) a photoacid generator capable of generating an acid upon exposure to light of wavelength 190-500 nm, (D) a solvent, and (E) an isocyanuric acid. The resist composition overcomes the stripping problem that the film is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates. 3. The resist composition of wherein 0.3≦a≦0.7 claim 2 , 0.2≦b≦0.5 claim 2 , 0 Подробнее

Alkaline solubie resin and light sensible resin composition comprising same and use thereof

An embodiment of the invention discloses an alkaline soluble resin and a method for preparing the same. The chemical formula of this alkaline soluble resin is shown in Formula I: wherein a is an integer of 1 to 5, b is an integer of 1 to 5, c is an integer of 1 to 10, d is an integer of 1 to 10, m is an integer of 1 to 30, n is an integer of 1 to 10, R is hydrogen, alkyl, alkoxy or acrylate; the alkaline soluble resin has a weight-average molecular weight of 3,500-35,000. The invention also discloses a light sensible resin composition comprising the alkaline soluble resin, as well as a colored photoresist for color filters comprising the aforementioned light sensible resin composition and a display element comprising this colored photoresist.

Resist underlayer film composition, method for producing polymer for resist underlayer film, and patterning process using the resist underlayer film composition

A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of a condensed body, the body being obtained by condensation of one or more kinds of a compound shown by the following general formula (1-1) with one or more kinds of a compound shown by the following general formula (2-3) and an equivalent body thereof, with one or more kinds of a compound shown by the following general formula (2-1), a compound shown by the following general formula (2-2), and an equivalent body thereof; a method for producing a polymer for a resist underlayer film; and a patterning process using the same.

PHOTORESIST FOR IMPROVED LITHOGRAPHIC CONTROL

Methods and corresponding photoresists are described for fine linewidth lithography using x-rays, e-beams, visible spectrum optical lithography, ultra-violet optical lithography or extreme ultra-violet lithography. The methods include the formation of a photoresist film including a dopant having an atomic mass greater than or equal to twenty two. The dopant may be introduced daring the formation of the photoresist. The photoresist includes the dopant to increase the absorption of radiation during lithography. The photoresist may be silicon-, germanium or carbon-based photoresists. 1. A method of forming a photoresist layer on a semiconductor substrate , the method comprising:forming a photoresist layer on the semiconductor substrate, wherein the photoresist layer comprises a dopant having an atomic number greater than or equal to twenty two.2. The method of wherein the photoresist layer comprises a carbon-based photoresist claim 1 , a germanium-based photoresist or a silicon-based photoresist.3. The method of wherein the photoresist layer comprises poly-silazane chains.4. The method of wherein forming the photoresist layer on the semiconductor substrate comprises delivering a liquid precursor to the surface of the semiconductor substrate claim 1 , wherein the dopant is provided within claim 1 , the liquid precursor.5. The method of wherein forming the photoresist layer on the semiconductor substrate comprises forming the photoresist layer by chemical vapor deposition claim 1 , the dopant providing precursors to a substrate processing region to form the photoresist layer on the semiconductor substrate wherein the photoresist layer comprises the dopant.6. The method of wherein the dopant is one of silver claim 1 , cadmium claim 1 , indium claim 1 , tin claim 1 , antimony claim 1 , tellurium and iodine.7. The method of further comprising forming an EUV image on the photoresist to expose the photoresist.8. The method of wherein the precursors comprise a radical ...

GAP EMBEDDING COMPOSITION, METHOD OF EMBEDDING GAP AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION

A gap embedding composition used for embedding a patterned gap formed between photosensitive resin film portions on a semiconductor substrate surface, the gap embedding composition, having a hydrolysis condensate having an average molecular weight of 3,000 to 50,000 derived from an alkoxysilane raw material including at least alkyltrialkoxysilane and an ether compound having a total carbon atom of from 7 to 9 and/or an alkyl alcohol compound having a total carbon atom of from 6 to 9, as a solvent. 1. A gap embedding composition used for embedding a patterned gap formed between photosensitive resin film portions on a semiconductor substrate surface , the gap embedding composition comprising:a hydrolysis condensate having an average molecular weight of 3,000 to 50,000 derived from an alkoxysilane raw material including at least alkyltrialkoxysilane; andan ether compound having a total carbon atom of from 7 to 9 and/or an alkyl alcohol compound having a total carbon atom of from 6 to 9, as a solvent.2. The composition according to claim 1 , wherein 80 mass % or more of the solvent is the ether compound having the total carbon atom of from 7 to 9 and/or the alkyl alcohol compound having the total carbon atom of from 6 to 9.3. The composition according to claim 1 , wherein 20 mass % or more of the alkoxysilane raw material is alkyltrialkoxysilane.4. The composition according to claim 1 , wherein a solvent for dissolving the alkoxysilane raw material used for the above-described hydrolysis and condensation is different from the solvent for incorporating the hydrolysis condensate therein.5. The composition according to claim 1 , for use in a patterning technique comprising: removing the patterned photosensitive resin film portions; and subjecting a semiconductor substrate to etching manufacturing by using claim 1 , as a resist claim 1 , a cured film of the hydrolysis condensate having been left in the gap portion.6. The composition according to claim 5 , wherein a width of ...

SILICONE STRUCTURE-BEARING POLYMER, RESIN COMPOSITION, AND PHOTO-CURABLE DRY FILM

A silicone structure-bearing polymer having a crosslinking group within the molecule, containing an isocyanurate structure bonded within the molecule, and having a Mw of 3,000-500,000 is provided. The polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates. 1. A silicone structure-bearing polymer having a crosslinking group or a reaction site susceptible to crosslinking reaction within the molecule , containing an isocyanurate structure bonded within the molecule or to a terminal group , and having a weight average molecular weight of 3 ,000 to 500 ,000.6. The method of wherein the isocyanurate structure compound is used in an amount of 0.1 to 10.0% by weight based on the total weight of the silicone polymer-forming reactants.7. A resin composition comprising{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(A) the silicone structure-bearing polymer of ,'}(B) at least one crosslinker selected from the group consisting of an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on the average at least two methylol or alkoxymethylol groups in the molecule, and a polyhydric phenol compound having a hydroxyl group substituted by a glycidoxy group,(C) a photoacid generator which is decomposed to generate an acid upon exposure to radiation of wavelength 190 to 500 nm, and(D) a solvent.8. A chemically amplified negative resist composition comprising the resin composition of .9. A photo-curable dry film comprising a photo-curable resin layer having a thickness of 10 to 100 μm sandwiched between a support film and a protective film claim 7 ,{'claim-ref': {'@idref': 'CLM-00007', 'claim 7'}, 'the photo-curable resin layer being formed of a photo-curable resin composition which is the resin composition of .'}10. A pattern forming process comprising the steps of:{'claim-ref': {'@idref': 'CLM-00008', 'claim 8'}, '(1) coating the chemically amplified negative resist ...

PHOTO-PATTERNABLE DIELECTRIC MATERIALS CURABLE TO POROUS DIELECTRIC MATERIALS, FORMULATIONS, PRECURSORS AND METHODS OF USE THEREOF

Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers. 2. The composition of matter claim 1 , wherein Ris methyl claim 1 , tert-butyl or neodecanyl.4. The method of claim 3 , wherein Ris methyl claim 3 , ter-butyl or neodecanyl and Ris —O—CH.5. The composition of matter of claim 1 , wherein Ris methyl.6. The composition of matter of claim 1 , wherein Ris tert-butyl.7. The composition of matter of claim 1 , wherein Ris neodecanyl.8. The composition of matter of claim 1 , wherein Ris —O—CH.9. The composition of matter of claim 1 , wherein Ris methyl and Ris —O—CH.10. The composition of matter of claim 1 , wherein Ris tert-butyl and Ris —O—CH.11. The composition of matter of claim 1 , wherein Ris neodecanyl and Ris —O—CH.12. The method of claim 3 , wherein Ris methyl.13. The method of claim 3 , wherein Ris tert-butyl.14. The method of claim 3 , wherein Ris neodecanyl.15. The method of claim 3 , wherein Ris —O—CH.16. The method of claim 3 , wherein Ris methyl and Ris —O—CH.17. The method of claim 3 , wherein Ris tert-butyl and Ris —O—CH.18. The method of claim 3 , wherein Ris neodecanyand Ris —O—CH.20. The method of claim 19 , including performing the preparation under nitrogen. This application is a division of U.S. patent application Ser. No. 12/575,515 filed on Oct. 8, 2009.The present invention relates to the field of photo-patternable porous dielectric materials; more specifically, it relates to porous patternable dielectric materials that become porous upon curing, photo-sensitive ...

SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS

The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C).The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound. 126-. (canceled)29. The silicon-containing surface modifier according to claim 27 , wherein the acid-labile group in the foregoing Ris an acetal group or a tertiary alkyl group.30. The silicon-containing surface modifier according to claim 28 , wherein the acid-labile group in the foregoing Ris an acetal group or a tertiary alkyl group.31. A silicon-containing resist underlayer film composition claim 27 , wherein the silicon-containing resist underlayer film composition contains the silicon-containing surface modifier according to and a polysiloxane compound.32. A silicon-containing resist underlayer film composition claim 28 , wherein the silicon-containing resist underlayer film composition contains the silicon-containing surface modifier according to and a polysiloxane compound.33. A silicon-containing resist underlayer film composition claim 29 , wherein the silicon-containing resist underlayer film composition contains the silicon-containing surface modifier according to and a polysiloxane compound.34. A silicon-containing resist underlayer film composition claim 30 , wherein the silicon-containing resist underlayer film composition contains the silicon-containing surface modifier according to and a polysiloxane compound.35. The silicon-containing resist underlayer film composition according to claim 31 , wherein claim 31 , as the component in the polysiloxane compound claim 31 , content of a component derived from a four-functional hydrolysable monomer is 70 ...

POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION

A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR)in general formula (1) and the silane compound represented by Si(OR)in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 Å/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 Å/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent. (In the formula: R represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, in which any methylene may be replaced by oxygen, or represents an aryl group having 6 to 20 carbon atoms, in which any hydrogen may be replaced by fluorine; and Ris an alkyl group having 1 to 5 carbon atoms.) 1. A positive photosensitive siloxane composition comprising (I) two kinds or more of polysiloxanes which have different dissolution rates in a tetramethylammonium hydroxide aqueous solution each other , (II) a diazonaphthoquinone derivative , and (III) solvent , {'br': None, 'sup': '1', 'sub': '3', 'RSi(OR)'}, 'a polysiloxane (Ia) which is obtained by hydrolyzing and condensing, in the presence of a basic catalyst, a silane compound represented by the formula (1), 'wherein the polysiloxane (I) is a mixture of'} {'br': None, 'sup': '1', 'sub': '4', 'Si(OR)'}, 'and a silane compound represented by the formula (2){'sup': '1', 'in which R represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, in which any methylene group may be replaced by an oxygen atom, or represents an aryl group having 6 to 20 carbon atoms, in which any hydrogen atom may be replaced by a fluorine atom, and Rrepresents an alkyl ...

MONOLAYER OR MULTILAYER FORMING COMPOSITION

There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): 2. The composition for forming a monolayer or a multilayer according to claim 1 , further comprising water and an organic acid.4. A method for forming a photoresist pattern claim 1 , the method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a process of forming a monolayer or a multilayer on a semiconductor substrate using the composition according to ;'}a process of forming a photoresist film on the monolayer or the multilayer;a process of exposing the semiconductor substrate coated with the monolayer or the multilayer and the photoresist film to light; anda process of developing the photoresist film after the exposure.5. The method for forming a photoresist pattern according to claim 4 , wherein a level difference is formed on a surface of the semiconductor substrate.7. A method for forming a photoresist pattern claim 4 , the method comprising:{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'a process of forming a monolayer or a multilayer on a semiconductor substrate using the composition according to ;'}a process of forming a photoresist film on the monolayer or the multilayer;a process of exposing the semiconductor substrate coated with the monolayer or the multilayer and the photoresist film to light; anda process of developing the photoresist film after the exposure.8. A method for forming a photoresist pattern claim 4 , the method comprising:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'a process of forming a monolayer or a multilayer on a semiconductor substrate using the composition according to ;'}a process of forming a photoresist film on the monolayer or the multilayer;a process of exposing the semiconductor substrate coated with the monolayer or the multilayer and the photoresist film to light; anda process of developing the ...

PHOTO-CURING POLYSILOXAN COMPOSITION AND APPLICATIONS THEREOF

A photo-curing polysiloxane composition includes a polysiloxane, a quinonediazidesulfonic acid ester, a fluorene-containing compound, and a solvent. The polysiloxane is obtained by subjecting a silane monomer component to condensation. A protective film formed from the photo-curing polysiloxane composition, and an element containing the protective film, are also discussed. 2. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said at least one of Ris said anhydride-substituted C-Calkyl group and said reactive group is said epoxy-containing group.3. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said at least one of Ris selected from the group consisting of said epoxy-substituted C-Calkyl group and said epoxy-substituted alkoxy group claim 1 , and said reactive group is selected from the group consisting of said carboxy-containing group and said amino-containing group.4. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said fluorene-containing compound is in an amount ranging from 5 to 120 parts by weight based on 100 parts by weight of said polysiloxane.5. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said quinonediazidesulfonic acid ester is in an amount ranging from 1 to 50 parts by weight based on 100 parts by weight of said polysiloxane.6. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said solvent is in an amount ranging from 50 to 1 claim 1 ,200 parts by weight based on 100 parts by weight of said polysiloxane.7. The photo-curing polysiloxane composition as claimed in claim 1 , further comprising a thermal acid generator.8. The photo-curing polysiloxane composition as claimed in claim 7 , wherein said thermal acid generator is in an amount ranging from 0.5 to 20 parts by weight based on 100 parts by weight of said polysiloxane.9. A protective film adapted to be formed on a substrate claim 1 , said protective film being formed by ...

PHOTORESIST COMPOSITION, METHOD OF MANUFACTURING A POLARIZER AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME

A photoresist composition includes about 65% by weight to about 80% by weight of a mono-functional monomer, about 5% by weight to about 20% by weight of a di-functional monomer, about 1% by weight to about 10% by weight of a multi-functional monomer including three or more functional groups, about 1% by weight to about 5% by weight of a photoinitiator, and less than about 1% by weight of a surfactant, each based on a total weight of the photoresist composition. 1. A photoresist composition comprising:about 65 percent by weight to about 80 percent by weight of a mono-functional monomer;about 5 percent by weight to about 20 percent by weight of a di-functional monomer;about 1 percent by weight to about 10 percent by weight of a multi-functional monomer comprising three or more functional groups;about 1 percent by weight to about 5 percent by weight of a photoinitiator; andless than about 1 percent by weight of a surfactant, each based on a total weight of the photoresist composition.2. The photoresist composition of claim 1 , wherein the mono-functional monomer comprises at least one selected from glycidyl acrylate claim 1 , glycidyl methacrylate claim 1 , hydroxyethyl methacrylate claim 1 , 2-hydroxy-3-phenoxy-propyl acrylate claim 1 , diethylene methylether methacrylate claim 1 , hydroxyethyl acrylate claim 1 , butyl methacrylate claim 1 , hydroxypropyl acrylate claim 1 , 2-phenoxyethyl acrylate claim 1 , 2-phenoxyethyl methacrylate claim 1 , 3 claim 1 ,3 claim 1 ,5-trimethylcyclohexyl methacrylate claim 1 , isobornyl acrylate claim 1 , isobornyl methacrylate claim 1 , isodecyl acrylate claim 1 , isodecyl methacrylate claim 1 , isooctyl acrylate claim 1 , lauryl acrylate claim 1 , stearyl acrylate claim 1 , tetrahydrofurfuryl acrylate and tridecyl acrylate.3. The photoresist composition of claim 1 , wherein the di-functional monomer includes at least one selected from 1 claim 1 ,6-hexanediol diacrylate claim 1 , 1 claim 1 ,6-hexanediol dimethacrylate claim 1 , ...

Silicon compound, silicon-containing compound, composition for forming resist underlayer film containing the same and patterning process

The invention provides a silicon compound represented by the following general formula (A-1) or (A-2), wherein, R represents a hydrocarbon group having 1 to 6 carbon atoms, R 1 and R 2 represent an acid labile group, R 3 represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms, k represents an integer of 1 or 2, m represents an integer of 0, 1, or 2, and n represents an integer of 0 or 1. There can be provided a resist underlayer film that can be applied not only to a resist pattern formed by a hydrophilic organic compound obtained in negative development but also to a resist pattern composed of a hydrophobic compound obtained in conventional positive development.

Negative-working thick film photoresist

Disclosed are compositions for negative-working thick film photophotoresists based on acrylic co-polymers. Also included are methods of using the compositions.

Photosensitive resin composition

Disclosed is a photosensitive resin composition for an organic insulating layer. More specifically, the photosensitive resin composition is suitable for forming a substrate of a transflective thin film transistor liquid crystal display (TFT-LCD) or a pattern of an interlayer insulating layer by improving remarkably a pattern property with a high taper angle besides improvement of flatness, sensitivity, heat resistance, and transparency. Particularly, the photosensitive resin composition can provide low power dissipation besides a wide viewing angle and high visibility when being applied to a transflective type display. In addition, the photosensitive resin composition can provide a clear screen under natural light without a backlight by maintaining the brightness of a screen and prominent field visibility.

Photo-Patternable and Developable Silsesquioxane Resins for Use in Device Fabrication

A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5. 1. A coatable resin solution for forming a coating on a substrate , such as a wafer or electronic device , the resin solution comprising:{'sub': 3/2', '3/2, 'sup': 1', '1, 'a silsequioxane-based resin comprising a hydride component and at least one photo-curable component, the hydride component characterized by units of —(HSiO)—; the photo-curable component characterized by units of —(RSiO)—, where Ris an organic photocurable group;'}at least one initiator selected as one from the group of a free-radical initiator, a cationic initiator, and a combination or mixture thereof; andan organic solvent;wherein the resin solution is capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation.2. The resin solution of claim 1 , wherein Ris selected as one from the group of an epoxy group claim 1 , an acrylate group claim 1 , a vinylether group claim 1 , a vinyl group claim 1 , and a mixture or combination thereof.3. The resin solution of claim 2 , wherein Ris an epoxycyclohexylethyl group claim 2 , a glycidoxypropyl group claim 2 , or a methacryloxypropyl group.4. The resin solution of claim 1 , wherein the silsesquioxane-based resin further comprises an organo-siloxane component claim 1 , the organo-siloxane component being characterized by units of —(RSiO)— claim 1 , where Ris an organic group selected as one from the group of a polyethylene ...

Primer and pattern forming method for layer including block copolymer

An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate ( 1 ), thereby forming a layer ( 2 ) composed of the undercoat agent, step (2) forming a layer ( 3 ) containing a block copolymer having a plurality of polymers bonded on the surface of the layer ( 2 ) composed of the undercoat agent, and subjecting the layer ( 3 ) containing the block copolymer to phase separation, and step (3) selectively removing a phase ( 3 a ) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer ( 3 ) containing the block copolymer.

Curable composition for imprints, pattern-forming method and pattern

Provide is a curable composition for imprints capable of keeping a good pattern and heat resistance. A curable composition for imprints comprising a polymerizable compound (Ax-1) having maleimide structure(s), or a compound (Ax-2) having a partial structure represented by formula (I) below. Formula (I)

Nanoimprint curable composition, nanoimprint-lithographic molded product, and method for forming pattern

The present invention provides a nanoimprint curable composition to be used in “nanoimprint lithography” in which a nanoimprint mold is pressed to transfer a fine concave-convex pattern, the nanoimprint curable composition containing a composite resin which has a polysiloxane segment and a polymer segment other than the polysiloxane segment, the polysiloxane segment containing a silanol group and/or hydrolyzable silyl group and having a polymerizable double bond. In addition, the present invention provides a nanoimprint-lithographic molded product, resist film, resin mold, and method for forming a pattern, which each involves use of the nanoimprint composition.

PATTERN-FORMING METHOD

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR, and Rrepresents a monovalent organic group. 1. A pattern-forming method comprising:forming a resist underlayer film on an upper face side of a substrate;forming a silicon-containing film on an upper face side of the resist underlayer film;forming a resist pattern on an upper face side of the silicon-containing film;etching the silicon-containing film using the resist pattern as a mask; andremoving the silicon-containing film with a basic aqueous solution,wherein the pattern-forming method does not comprise, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound.2. The pattern-forming method according to claim 1 , wherein the silicon-containing film is formed from a hydrolytic condensation product of a composition comprising a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds claim 1 ,{'br': None, 'sub': '4', 'SiX\u2003\u2003(1)'}{'sup': 2', '2, 'wherein, in the formula (1), X represents a halogen atom or —OR, wherein Rrepresents a monovalent organic group.'}3. The pattern-forming ...

NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF SPACER, PRODUCTION METHOD OF PROTECTION FILM, AND LIQUID CRYSTAL DISPLAY DEVICE

A negative photosensitive resin composition including an alkali-soluble resin (A), a compound (B) containing an ethylenically-unsaturated group, a photoinitiator (C), a solvent (D), and a silicone compound (E) is provided. The silicone compound (E) contains the structure represented by formula (E-1). The negative photosensitive resin composition has good sputtering resistance, by using the negative photosensitive resin composition, the issue of poor sputtering resistance of the spacer or a protective film formed by the negative photosensitive resin composition can be solved. 3. The negative photosensitive resin composition of claim 2 , wherein the first alkali-soluble resin (A-1) has an ethylenically-unsaturated group.4. The negative photosensitive resin composition of claim 1 , further comprising a photoacid generator (F).5. The negative photosensitive resin composition of claim 1 , wherein based on a usage amount of 100 parts by weight of the alkali-soluble resin (A) claim 1 , a usage amount of the compound (B) containing an ethylenically-unsaturated group is 30 parts by weight to 300 parts by weight claim 1 , a usage amount of the photoinitiator (C) is 10 parts by weight to 80 parts by weight claim 1 , a usage amount of the solvent (D) is 500 parts by weight to 3000 parts by weight claim 1 , and a usage amount of the silicone compound (E) is 3 parts by weight to 25 parts by weight.6. The negative photosensitive resin composition of claim 2 , wherein based on a usage amount of 100 parts by weight of the alkali-soluble resin (A) claim 2 , a usage amount of the first alkali-soluble resin (A-1) is 3 parts by weight to 100 parts by weight.7. The negative photosensitive resin composition of claim 4 , wherein based on a usage amount of 100 parts by weight of the alkali-soluble resin (A) claim 4 , a usage amount of the photoacid generator (F) is 0.5 parts by weight to 5 parts by weight.8. A production method of a spacer claim 1 , wherein a spacer having a pattern is ...

SILICONE SKELETON-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PHOTO-CURABLE DRY FILM, LAMINATE, AND PATTERNING PROCESS

The present invention provides a silicone skeleton-containing polymer including a silicone skeleton shown by the following formula (1) and having a weight average molecular weight of 3,000 to 500,000. 3. A photo-curable resin composition comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the silicone skeleton-containing polymer (A) according to , and'}a photo-acid generator (B) that is decomposed by light having a wavelength of 190 to 500 nm to generate an acid.4. A photo-curable resin composition comprising:{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'the silicone skeleton-containing polymer (A) according to , and'}a photo-acid generator (B) that is decomposed by light having a wavelength of 190 to 500 nm to generate an acid.5. The photo-curable resin composition according to claim 3 , further comprising a crosslinking agent (C).6. The photo-curable resin composition according to claim 5 , wherein the crosslinking agent (C) is any one or more species selected from amino condensates modified with formaldehyde or formaldehyde-alcohol claim 5 , phenol compounds having on average two or more methylol groups or alkoxy methylol groups in a molecule thereof claim 5 , and epoxy compounds having on average two or more epoxy groups in a molecule thereof.7. The photo-curable resin composition according to claim 3 , further comprising a solvent (D).8. The photo-curable resin composition according to claim 3 , further comprising a basic compound (E).9. A photo-curable dry film comprising:a support film, and{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'a photo-curable resin layer of the photo-curable resin composition according to being applied onto the support film and dried.'}10. .A laminate comprising:a substrate having either or both of a trench and a hole with an aperture width of 10 to 100 μm and a depth of 10 to 120 μm, and{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'a cured material layer made from the photo-curable resin composition according ...

RADIATION-SENSITIVE RESIN COMPOSITION AND ELECTRONIC COMPONENT

Provided is a radiation-sensitive resin composition capable of forming a resin film for which development residue formation is sufficiently inhibited and that has excellent extensibility. The radiation-sensitive resin composition contains: a cycloolefin polymer (A-1) including a protonic polar group; a cycloolefin polymer (A-2) including a protonic polar group; a difunctional epoxy compound (B); and a radiation-sensitive compound (C). The cycloolefin polymer (A-1) has a weight-average molecular weight of not less than 1,000 and less than 10,000, and the cycloolefin polymer (A-2) has a weight-average molecular weight of not less than 10,000 and not more than 100,000. Content of the cycloolefin polymer (A-2) is not less than 5 mass % and not more than 55 mass % of total content of the cycloolefin polymer (A-1) and the cycloolefin polymer (A-2). 1. A radiation-sensitive resin composition comprising:a cycloolefin polymer (A-1) including a protonic polar group;a cycloolefin polymer (A-2) including a protonic polar group;a difunctional epoxy compound (B); anda radiation-sensitive compound (C), whereinthe cycloolefin polymer (A-1) has a weight-average molecular weight of not less than 1,000 and less than 10,000, and the cycloolefin polymer (A-2) has a weight-average molecular weight of not less than 10,000 and not more than 100,000, andcontent of the cycloolefin polymer (A-2) is not less than 5 mass % and not more than 55 mass % of total content of the cycloolefin polymer (A-1) and the cycloolefin polymer (A-2).3. The radiation-sensitive resin composition according to claim 1 , wherein content of the difunctional epoxy compound (B) is 150 parts by mass or more per 100 parts by mass of the cycloolefin polymer (A-2).4. The radiation-sensitive resin composition according to claim 1 , further comprising either or both of a compound including at least two alkoxymethyl groups and a compound including at least two methylol groups.5. The radiation-sensitive resin composition ...

PHOTOPOLYMER COMPOSITION

The present disclosure relates to a photopolymer composition, and more particularly, to a compound having a novel structure, a photopolymer composition including the compound as a dye, a hologram recording medium produced from the photopolymer composition, an optical element including the hologram recording medium, and a holographic recording method using the photopolymer composition. 2. The compound according to claim 1 ,{'sup': '−', 'the An is a halide ion, a cyano ion, an alkoxy ion having 1 to 30 carbon atoms, an alkoxycarbonyl ion having 1 to 30 carbon atoms, a sulfonate ion, an alkyl-sulfonate ion having 1 to 30 carbon atoms, a substituted or unsubstituted aromatic sulfonate ion having 6 to 30 carbon atoms, an alkyl sulfate ion having 1 to 30 carbon atoms, a sulfate ion, or a substituted or unsubstituted aromatic sulfate ion having 6 to 30 carbon atoms.'}3. The compound according to claim 1 ,wherein in the Chemical Formula 1,X is silicon (Si),n and m are each 1,{'sub': 1', '2, 'Zand Zare each nitrogen (N),'}{'sub': 1', '12, 'Rto Rare identical to or different from each other, and each is hydrogen, an alkyl group having 1 to 20 carbon atoms; or a halogen group,'}{'sub': '1', 'Aris an aromatic divalent functional group having 6 to 20 carbon atoms to which at least one hydrogen, an alkyl group having 1 to 20 carbon atoms or halogen group is bonded, and'}{'sub': '1', 'claim-text': {'br': None, 'sub': 2', '2, '—Y—Ar\u2003\u2003[Chemical Formula 2]'}, 'Yis a functional group represented by Chemical Formula 2.'}in the Chemical Formula 2,{'sub': '2', 'Yis an ether group or an ester, and'}{'sub': '2', 'Aris an aliphatic functional group having 1 to 20 carbon atoms or an aromatic functional group having 6 to 20 carbon atoms substituted with one or more halogen groups.'}4. A photopolymer composition comprising:a polymer matrix or a precursor thereof;{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a dye including the compound of ;'}a photoreactive monomer; anda ...

COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; Wrepresents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W; and Wrepresents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer. 3. The composition for forming an organic film according to claim 1 , wherein the polymer has a weight-average molecular weight of 1000 to 5000.4. The composition for forming an organic film according to claim 1 , wherein the organic solvent is a mixture of one or more organic solvents each having a boiling point of lower than 180° C. and one or more organic solvents each having a boiling point of 180° C. or higher.5. The composition for forming an organic film according to claim 1 , further comprising at least one of a surfactant and a plasticizer.6. A substrate for manufacturing a semiconductor device claim 1 , comprising an organic film on the substrate claim 1 , the organic film being formed by curing the composition for forming an organic film according to .7. A method for forming an organic film employed in a semiconductor device manufacturing process claim 1 , the method comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'spin-coating a substrate to be processed with the composition for forming an organic film according to ; and'}heating ...

Chemical solution evaporation device and substrate processing device including the same

A chemical solution vaporization device includes a chemical solution tank including chemical solution vaporization rooms, a chemical solution sensing room, and a chemical solution supply room. A first internal wall separating the plurality of chemical solution vaporization rooms from each other includes a first opening at a lower portion thereof. A second internal wall separating at least one of the plurality of chemical solution vaporization rooms from the chemical solution supply room includes a second opening at a lower portion thereof. A third internal wall separating at least one of the plurality of chemical solution vaporization rooms from the chemical solution sensing room includes a third opening at a lower portion thereof. And a lower portion of a fourth internal wall separating the chemical solution sensing room from the chemical solution supply room is combined with the lower wall.

NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM OBTAINED BY CURING SAME, METHOD FOR PRODUCING CURED FILM, OPTICAL DEVICE PROVIDED WITH CURED FILM, AND BACKSIDE-ILLUMINATED CMOS IMAGE SENSOR

The present invention provides a negative photosensitive resin composition including the following (a) to (d): (a) metallic compound particles, (b) a polysiloxane compound, (c) a compound having at least 1 group containing an α,β-unsaturated carboxylate ester structure, and (d) a photopolymerization initiator, the composition also including (e) a compound containing maleimide group. 1. A negative photosensitive resin composition comprising the following (a) to (d):(a) metallic compound particles,(b) a polysiloxane compound,(c) a compound having at least 1 group containing an α,β-unsaturated carboxylate ester structure, and(d) a photopolymerization initiator, the composition further comprising(e) a compound containing maleimide group.4. A negative photosensitive resin composition according to wherein Ris an allyl group claim 3 , a vinyl group claim 3 , (meth)acryloyl group claim 3 , or styryl group.7. A negative photosensitive resin composition according to wherein ratio of molar amount of the Si atoms in the structural unit represented by the general formula (1) and/or (2) constituting the polysiloxane compound to molar amount of the Si atom of the polysiloxane compound (b) is at least 5 mol % to up to 30 mol %.8. A negative photosensitive resin composition according to wherein the metallic compound particles (a) is at least one metal compound particles selected from aluminum compound particles claim 1 , tin compound particles claim 1 , titanium compound particles claim 1 , and zirconium compound particles; or a composite particles of at least one metallic compound selected from aluminum compound claim 1 , tin compound claim 1 , titanium compound claim 1 , and zirconium compound with a silicon compound.9. A negative photosensitive resin composition according to wherein the metallic compound particles (a) and the polysiloxane compound (b) are partially bonded.10. A negative photosensitive resin composition according to wherein the metallic compound particles (a) have ...

NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT AND DISPLAY APPARATUS THAT INCLUDE CURED FILM, PRODUCTION METHOD FOR THE SAME

To provide an alkaline developable negative-type photosensitive resin composition from which a cured film that has a high-resolution and low-taper pattern shape and that are excellent in heat resistance and light blocking property can be obtained. A negative-type photosensitive resin composition is characterized by containing an (A1) first resin, a (A2) second resin, a (C) photopolymerization initiator, and a (D) coloring agent, wherein the (A1) first resin is an (A1-1) polyimide and/or an (A1-2) polybenzo-oxazole, and wherein the (A2) second resin is one or more species selected from a (A2-1) polyimide precursor, a (A2-2) polybenzo-oxazole precursor, a (A2-3) polysiloxane, a (A2-4) cardo based resin, and an (A2-5) acrylic resin, and wherein a content ratio of the (A1) first resin in a total of 100 mass % of the (A1) first resin and the (A2) second resin is within the range of 25 to 90 mass %. 1. A cured film obtained by curing the negative-type photosensitive resin composition comprising an (A1) first resin , a (A2) second resin , a (C) photopolymerization initiator , and a (D) coloring agent ,wherein the (A1) first resin is an (A1-1) polyimide and/or an (A1-2) polybenzo-oxazole, andwherein the (A2) second resin is one or more species selected from a (A2-2) polybenzo-oxazole precursor, a (A2-3) polysiloxane, a (A2-4) cardo based resin, and an (A2-5) acrylic resin, andwherein a content ratio of the (A1) first resin in a total of 100 mass % of the (A1) first resin and the (A2) second resin is within a range of 25 to 90 mass %.2. The cured film according to claim 1 , wherein the (D) coloring agent contains a (D1) pigment and the (D1) pigment content ratio in the entire solid content of the negative photosensitive resin composition is within a range of 5 to 70 mass %.3. The cured film according to claim 1 , wherein the (D) coloring agent contains a (Da) black coloring agent and the (Da) black coloring agent contains a (D1a) black pigment.5. The cured film according to ...

Dry film formulation

An improved photoimageable dry film formulation, a fluidic ejection head containing a thick film layer derived from the improved photoimageable dry film formulation, and a method for making a fluidic ejection head. The improved photoimageable dry film formulation includes a multifunctional epoxy compound, a photoinitiator capable of generating a cation, a non-photoreactive solvent, and from about 0.5 to about 5% by weight a silane oligomer adhesion enhancer based on a total weight of the photoimageable dry film formulation before drying.

Composition for forming organic film, patterning process, and polymer

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) as a repeating unit, and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; each R represents a hydrogen atom or a monovalent organic group having 2 to 10 carbon atoms and an unsaturated bond; R′ represents a single bond or W1; and W1 represents a divalent organic group having 6 to 80 carbon atoms and one or more aromatic rings. This invention provides: a composition for forming an organic film, the composition containing a polymer having an indenofluorene structure with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using this composition; and a polymer for providing such a composition for forming an organic film.

RADIATION-SENSITIVE RESIN COMPOSITION AND ELECTRONIC DEVICE

A radiation-sensitive resin composition comprising a binder resin (A), radiation-sensitive compound (B), cross-linking agent (C), and silane coupling agent (D) represented by the following general formula (1) is provided. In the general formula (1), R1 to R3 respectively independently are a monovalent alkyl group having 1 to 5 carbon atoms. R4 is a divalent alkylene group having 1 to 10 carbon atoms, R5 is a hydrogen atom or monovalent alkyl group having 1 to 5 carbon atoms, and R6 to R10 are a hydrogen atom or monovalent alkyl group having 1 to 5 carbon atoms. 2. The radiation-sensitive resin composition according to wherein the binder resin (A) is a cyclic olefin polymer having a protonic polar group.3. The radiation-sensitive resin composition according to wherein the cross-linking agent (C) includes an epoxy compound having an epoxy group.4. The radiation-sensitive resin composition according to wherein the total amount of chlorine of the epoxy compound is 1500 ppm or less.5. The radiation-sensitive resin composition according to wherein the cross-linking agent (C) further includes a compound having an alkoxyalkyl group.6. The radiation-sensitive resin composition according to wherein a content of the cross-linking agent (C) is 5 to 80 parts by weight with respect to 100 parts by weight of the binder resin (A).7. The radiation-sensitive resin composition according to wherein a content of the silane coupling agent (D) is 0.01 to 100 parts by weight with respect to 100 parts by weight of the binder resin (A).8. The radiation-sensitive resin composition according to further comprising a phenol resin (E).9. An electronic device comprising a resin film containing a radiation-sensitive resin composition according to . The present invention relates to a radiation-sensitive resin composition and an electronic device provided with a resin film comprised of this radiation-sensitive resin composition, more particularly relates to a radiation-sensitive resin composition ...

Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process

The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2), wherein R 1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R 1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L 7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L 8′ represents the partial structure represented by the following formula (i), 0≦o<1, 0<p≦1 and o+p=1, wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R 0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L 0 represents a divalent organic group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

PATTERN FORMING METHOD, PHOTO MASK MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD

A pattern forming method including a step of coating a substrate with an actinic ray-sensitive or radiation-sensitive resin composition and forming an actinic ray-sensitive or radiation-sensitive film; a step of simultaneously irradiating the actinic ray-sensitive or radiation-sensitive film with a plurality of electron beams; and a step of developing the actinic ray-sensitive or radiation-sensitive film after the irradiation with electron beams is provided. The composition contains a resin (A), a photoacid generator (B), and an acid diffusion control agent (C) and a molar ratio (Qp) between the photoacid generator (B) and the acid diffusion control agent (C), which is represented by Equation (1) is 0.3 or greater. 1. A pattern forming method comprising:a step of coating a substrate with an actinic ray-sensitive or radiation-sensitive resin composition which contains a resin (A), a photoacid generator (B), and an acid diffusion control agent (C) and in which a molar ratio (Qp) between the photoacid generator (B) and the acid diffusion control agent (C), which is represented by Equation (1) is 0.3 or greater and forming an actinic ray-sensitive or radiation-sensitive film;a step of simultaneously irradiating the actinic ray-sensitive or radiation-sensitive film with a plurality of electron beams; and {'br': None, 'i': 'Qp', '(molar ratio)=Acid diffusion control agent (C)/Photoacid generator (B) \u2003\u2003(1)'}, 'a step of developing the actinic ray-sensitive or radiation-sensitive film after the irradiation with electron beams.'}2. The pattern forming method according to claim 1 ,wherein the molar ratio (Qp) between a photoacid generator (B) and the acid diffusion control agent (C), which is represented by Equation (1) in the actinic ray-sensitive or radiation-sensitive resin composition is 0.5 or greater.3. The pattern forming method according to claim 1 ,wherein a content of the photoacid generator (B) in the actinic ray-sensitive or radiation-sensitive resin ...

PHOTOSENSITIVE RESIN COMPOSITION FOR THIN FILM TRANSISTORS, CURED FILM, THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE OR ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE, METHOD FOR PRODUCING CURED FILM, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE OR ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE

The purpose of the present invention is to provide a photosensitive resin composition for thin film transistors, a cured film of which generates an extremely small amount of an outgas, and which is capable of forming an insulating layer for thin film transistors having excellent drive performance. In order to achieve the above-described purpose, the present invention has the configuration described below. Namely, a photosensitive resin composition for thin film transistors, which contains (A) an alkali-soluble resin having an amide group and/or an imide group, (B) a photosensitive compound and (C) organic solvents, and wherein the content of an organic solvent having nitrogen atoms in the organic solvents (C) is 1% by mass or less relative to the total mass of the organic solvents. 1. A photosensitive resin composition for thin film transistors , comprising (A) an amide group- and/or imide group-containing alkali-soluble resin , (B) a photosensitive compound , and (C) an organic solvent , wherein the organic solvent (C) contains 1% by mass or less of a nitrogen atom-containing organic solvent based on the organic solvent in total.2. The photosensitive resin composition for thin film transistors according to claim 1 , wherein the organic solvent (C) contains 80% by mass or more of an organic solvent satisfying the following (1) and (2) based on the organic solvent in total:{'sup': 3', '1/2, '(1) a solubility parameter of 8.0 or more and 11.0 or less [unit: (cal/cm)]; and'}(2) an organic compound composed of a carbon atom, a hydrogen atom, and an oxygen atoms.3. The photosensitive resin composition for thin film transistors according to claim 1 , wherein the organic solvent (C) contains 0.01% by mass or more and 1% by mass or less of the nitrogen atom-containing organic solvent based on the organic solvent in total.4. The photosensitive resin composition for thin film transistors according to claim 1 , wherein the organic solvent (C) contains 0.01% by mass or more and ...

Positive Type Photosensitive Siloxane Composition, Active Matrix Substrate, Display Apparatus, and Method of Manufacturing Active Matrix Substrate

The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate includes a plurality of gate wirings provided so as to extend parallel to each other on an insulating substrate, and a plurality of source wirings provided so as to extend parallel to each other in a direction intersecting the respective gate wirings. An interlayer insulating film and a gate insulating film are interposed at portions including the intersecting portions of the gate wirings and the source wirings, on a lower side of the source wiring. The interlayer insulating film is formed using the positive type photosensitive siloxane composition without using a resist. 110-. (canceled)11. A positive type photosensitive siloxane composition comprising: (I) at least two or more of polysiloxanes having different dissolution rates in a tetramethylammonium hydroxide (TMAH) aqueous solution , (II) a diazonaphthoquinone derivative , (III) a photoacid generator , and (IV) a solvent ,wherein the polysiloxane (I) is a mixture of: {'br': None, 'R1nSi(OR2)4−n \u2003\u2003(1)'}, '(A) polysiloxane (Ia) whose film obtained by hydrolyzing and condensing a silane compound represented by formula (1) below in the presence of a basic catalyst, after the prebake, is soluble in a 5 mass % TMAH aqueous solution, and has a dissolution rate of 1000 Å/sec or less(wherein R1 represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, in which arbitrary methylene may be substituted with oxygen, or an aryl group having 6 to 20 carbon atoms, in ...

TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYMER OF POLYIMIDE PRECURSOR AND METHOD FOR PRODUCING SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM

A polymer of a polyimide precursor which includes a structural unit represented by the following general formula (7), 5. A negative photosensitive resin composition which comprises{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, '(A) the polymer of a polyimide precursor according to ,'}(B) a photo-radical initiator, and(D) a solvent.6. A negative photosensitive resin composition which comprises{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(A′) the polymer of a polyimide precursor according to ,'}(B) a photo-radical initiator,(C) a crosslinking agent having two or more photopolymerizable unsaturated bonding group in one molecule, and(D) a solvent.7. A negative photosensitive resin composition which comprises{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, '(A′) the polymer of a polyimide precursor according to ,'}(B) a photo-radical initiator,(C) a crosslinking agent having two or more photopolymerizable unsaturated bonding group in one molecule, and(D) a solvent.10. A patterning process which comprises{'claim-ref': {'@idref': 'CLM-00005', 'claim 5'}, '(1) coating the negative photosensitive resin composition according to onto a substrate to form a film of a photosensitive material, then,'}(2) after heat treatment, exposing the film of a photosensitive material by a high energy beam having a wavelength of 190 to 500 nm or an electron beam through a photomask, and(3) developing the film by using a developer of an organic solvent.11. The patterning process according to claim 10 , further comprising a post-exposure bake step between the exposing step and the developing step.12. A method for forming a cured film which comprises heating and post-curing a pattern-formed film obtained by the patterning process according to at a temperature of 100 to 300° C. This is a Divisional of application Ser. No. 15/705,842 filed Sep. 15, 2017. The entire disclosure of the prior application is hereby incorporated by reference herein its entirety.The present invention relates to ...

Photosensitive stacked structure

This disclosure relates to a photosensitive stacked structure that includes first and second layers, in which the first layer is a photosensitive, dielectric layer and the second layer is a photosensitive layer. The dissolution rate of the first layer in a developer is less than the dissolution rate of the second layer in the developer.

SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS PROTECTED PHENOLIC GROUP AND NITRIC ACID

A resist underlayer film-forming composition for lithography can produce a semiconductor device; specifically, for forming a resist underlayer film that can be used as a hard mask. It includes a hydrolysis condensate (c) of a hydrolyzable silane (a) as a silane, nitric acid ions, and a solvent, wherein the hydrolyzable silane (a) contains a hydrolyzable silane of the following Formula (1): 2. The resist underlayer film-forming composition according to claim 1 , wherein the composition further comprises the hydrolyzable silane (a) and/or a hydrolysate (b) thereof.3. The resist underlayer film-forming composition according to claim 1 , wherein the amount of the nitric acid ions contained in the composition falls within a range of 1 ppm to 1 claim 1 ,000 ppm.4. The resist underlayer film-forming composition according to claim 1 , wherein claim 1 , in the hydrolysis condensate (c) claim 1 , the functional group of Formula (2) in the hydrolyzable silane of Formula (1) satisfies a (hydrogen atom)/(hydrogen atom+Rgroup) ratio by mole of 1% to 100%.6. The resist underlayer film-forming composition according to claim 5 , wherein the composition comprises claim 5 , as a polymer claim 5 , a hydrolysis condensate of a hydrolyzable silane containing a combination of the hydrolyzable silane of Formula (1) and the hydrolyzable silane of Formula (3).7. The resist underlayer film-forming composition according to claim 1 , wherein the composition further comprises an additive selected from water claim 1 , an acid claim 1 , a photoacid generator claim 1 , a surfactant claim 1 , a metal oxide claim 1 , or any combination of these.8. A method for producing the resist underlayer film-forming composition according to claim 1 , the method comprising a step (A) of filtering claim 1 , with a filter comprising a polar group-containing filter claim 1 , a polymer solution containing the hydrolysis condensate (c) of the hydrolyzable silane claim 1 , or the hydrolysis condensate (c) of the ...

Method of forming an image having multiple phases

A method of forming an image having multiple phases is disclosed herein. The method includes forming exposed and unexposed areas, the exposed areas comprising a first polymer network exhibiting first and second phases that are chemically connected and have different refractive indices, the first phase being continuous, and the second phase comprising a plurality of structures dispersed within the first phase, and the unexposed areas comprising a second polymer network comprising third and fourth phases that are chemically connected and have different refractive indices, the third phase being continuous, and the fourth phase comprising a plurality of structures dispersed within the third phase. The first and second polymer networks are chemically connected, and morphology formed by the first and second phases is different than that formed by the third and fourth phases.

Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates

The present invention is directed to a permanent photoimageable compositions and the cured products thereof useful for making negative-tone, permanent photoresist relief patterns on low surface energy polymer substrates, comprising: (A) one or more alkali soluble, film forming resins or one or more film forming resins that become soluble in alkali solutions by action of an acid, (B) one or more cationic photoinitiators, (C) one or more film casting solvents, and (D) one or more fluorinated compounds. The present invention is also directed to methods of forming a permanent photoresist relief pattern on a low surface energy polymer substrate using the disclosed compositions.

Resin composition, resin film, and electronic device

A resin composition comprising a binder resin (A), a compound (B) having an acidic group or latent acidic group, an organic solvent (C), and a compound (D) having one atom selected from a silicon atom, titanium atom, aluminum atom, and zirconium atom and having a hydrocarbyloxy group or hydroxy group bonded with that atom, wherein the compound (B) is at least one type selected from the group consisting of an aliphatic compound, aromatic compound, and heterocyclic compound, and a content of the compound (B) is 0.1 to 2.5 parts by weight and a content of the compound (D) is 2.2 to 7.0 parts by weight with respect to 100 parts by weight of the binder resin (A) is provided.

PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND USES THEREOF

The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D). 1. A photosensitive polysiloxane composition comprising:a polysiloxane (A);an o-naphthoquinone diazide sulfonic acid ester (B);an alkali-soluble resin containing a silyl group (C); anda solvent (D); {'br': None, 'sub': a', 'W', 'b', '4-W, 'Si(R)(OR)\u2003\u2003Formula (4),'}, 'wherein the polysiloxane (A) is copolymerized by a compound represented by Formula (4),'}wherein:{'sub': a', 'a', 'a', 'a, 'Rrepresents hydrogen, an alkyl group containing 1 to 10 carbon atoms, an alkenyl group containing 2 to 10 carbon atoms, an aryl group containing 6 to 15 carbon atoms, an alkyl group containing an acid anhydride group, an alkyl group containing an epoxy group, or an alkoxy group containing an epoxy group; when Ris plural, each Ris the same or different; at least one of Rrepresents the alkyl group containing the acid anhydride group;'}{'sub': b', 'b', 'b, 'Rrepresents hydrogen, an alkyl group containing 1 to 6 carbon atoms, an acyl group containing 1 to 6 carbon atoms, an aryl group containing 6 to 15 carbon atoms; when Ris plural, each Ris the same or different; and'}w represents an integer from 0 to 3.3. The photosensitive polysiloxane composition according to claim 1 , wherein based on 100 parts by weight of the used amount of the polysiloxane (A) claim 1 , the used amount of the o-naphthoquinone diazide sulfonic acid ester (B) ...

POSITIVE PHOTOSENSITIVE COMPOSITION, THIN FILM TRANSISTOR, AND COMPOUND

The present invention aims to provide positive photosensitive compositions that have excellent patterning properties and can exhibit excellent electrical insulation reliability when cured (as thin films). The positive photosensitive composition according to a first aspect of the present invention is characterized by including (A) a compound that contains an alkenyl group or a SiH group within a molecule and has a structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group; (B) a compound that contains a SiH group or an alkenyl group within a molecule; (C) a hydrosilylation catalyst; and (D) a photoacid generator. 130-. (canceled)32. The positive photosensitive composition according to claim 31 ,wherein the component (H) is a compound that contains a SiH group within a molecule and has a structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group.33. The positive photosensitive composition according to claim 31 ,wherein the structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group in the component (H) is a phenol structure with protected functionality or a carboxylic acid structure with protected functionality.34. The positive photosensitive composition according to claim 33 ,wherein the phenol structure with protected functionality is a bisphenol structure with protected functionality.35. The positive photosensitive composition according to claim 34 ,wherein the bisphenol structure with protected functionality is a bisphenol structure whose functionality is protected by a trialkylsilyl group or a butoxycarbonyl group.36. The positive photosensitive composition according to claim 31 ,wherein the component (H) has a bisphenol structure.37. The positive photosensitive composition according to claim 36 ,wherein the bisphenol structure is a bisphenol S structure or a bisphenol F structure.38. The positive photosensitive composition according to claim 33 , ...

NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT

The present invention is a negative photosensitive resin composition including: (A) an alkali-soluble resin containing at least one or more structures selected from a polyimide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof; (B) a crosslinkable polymer compound containing a structural unit represented by the following general formula (1) and having a group crosslinked with the component (A); (C) a compound that generates an acid by light; and (D) a heat crosslinking agent. An object of the present invention is to provide a negative photosensitive resin composition that enables formation of a fine pattern with high rectangularity and high resolution, has excellent mechanical characteristics even when cured at low temperatures, and furthermore, has no degradation in adhesive force between before and after a high temperature and high humidity test. 9. The negative photosensitive resin composition according to claim 1 , wherein the component (D) contains one or more kinds of crosslinking agents selected from an amino condensate modified by formaldehyde or formaldehyde-alcohol; and a phenol compound having two or more methylol groups or alkoxymethylol groups by average in one molecule.10. The negative photosensitive resin composition according to claim 1 , containing 10 to 100 parts by mass of the component (B) relative to 100 parts by mass of the component (A).11. The negative photosensitive resin composition according to claim 1 , further comprising one or more out of (E) a basic compound claim 1 , (F) a thermal acid generator claim 1 , (G) an antioxidant claim 1 , and (H) a silane compound.12. A patterning process comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(1) forming a photosensitive material film by coating a substrate with the negative photosensitive resin composition according to ;'}(2) subsequently, after a heat treatment, exposing the photosensitive material film with a high energy beam ...

POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, POSITIVE PHOTOSENSITIVE DRY FILM, METHOD FOR PRODUCING POSITIVE PHOTOSENSITIVE DRY FILM, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT

The present invention is a positive photosensitive resin composition including: (A) an alkali-soluble resin containing at least one or more structures selected from a polyimide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof; (B) a crosslinkable polymer compound containing a structural unit represented by the following general formula (1) and having a group crosslinked with the component (A); and (C) a compound having a quinonediazide structure for serving as a photosensitizer to generate an acid by light and increase a dissolution speed to an alkaline aqueous solution. An object of the present invention is to provide a positive photosensitive resin composition and a positive photosensitive dry film that enable formation of a fine pattern and high resolution, have excellent mechanical characteristics even when cured at low temperatures, and have no degradation in adhesive force between before and after a high temperature and high humidity test. 5. The positive photosensitive resin composition according to claim 1 , further comprising (D) a heat crosslinking agent.7. The positive photosensitive resin composition according to claim 1 , containing 1 to 50 parts by mass of the component (B) relative to 100 parts by mass of the component (A).8. The positive photosensitive resin composition according to claim 5 , containing 0.5 to 100 parts by mass of the component (D) relative to 100 parts by mass of the component (A).9. The positive photosensitive resin composition according to claim 1 , further comprising any one or more of (E) a protective amine compound claim 1 , (F) a thermal acid generator claim 1 , (G) an antioxidant claim 1 , and (H) a silane compound.10. A patterning process comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(1) forming a photosensitive material film by coating a substrate with the positive photosensitive resin composition according to ;'}(2) subsequently, after a heat treatment, ...

STABILIZATION OF VINYL ETHER MATERIALS

A stable viscosity coating composition, a method of forming the stable viscosity coating composition and a method for using the stable viscosity coating composition in a micro-molding imprint lithographic process, such as Step and Flash Imprint Lithography is disclosed. The stable viscosity coating composition may include at least one vinyl ether having at least one vinyl ether group (—OCR═CR), and a stabilizer, wherein the stabilizer may be 9-anthracenemethanol, a substituted 9-anthracenemethanol, phenothiazine, or a substituted phenothiazine. The coating composition may include a radiation sensitive photoacid generator (PAG). The method of forming the coating composition comprises combining at least one vinyl ether having at least one vinyl ether group (—OCR═CR), and at least one stabilizer. 2. The stable viscosity coating composition of claim 1 , wherein the at least one vinyl ether has the structure:{'br': None, 'sup': 1', '2', '3', '4', '5', '6', '7', '8, 'sub': 'n', 'C(R)(R)═C(R)OC(R)(R)(D)(R)(R)(R)\u2003\u2003(I);'}wherein D is a carbon atom or a silicon atom;wherein n is an integer from 0 to 6; and{'sup': 1', '2', '3', '4', '5', '6', '7', '8, 'wherein R, R, R, R, R, R, R, Rare independently a hydrogen atom, a fluorine atom or a hydrocarbyl substituent with a primary, a secondary or a tertiary carbon attachment point.'}3. The stable viscosity coating composition of claim 1 , wherein the at least one vinyl ether has the structure:{'br': None, 'sup': 9', '10', '11', '12', '13', '14', '15', '16', '17', '18, 'sub': o', 'p, 'C(R)(R)═C(R)OC(R)(R)C(R)(R)(R)(R)(R)\u2003\u2003(II);'}wherein E is a carbon atom or a silicon atom;wherein o and p are independently integers from 0 to 6 and a sum of o and p is less than or equal to 6; and{'sup': 9', '10', '11', '12', '13', '14', '15', '16', '17', '18, 'wherein R, R, R, R, R, R, R, R, Rand Rare independently a hydrogen atom, a fluorine atom or a hydrocarbyl substituent with a primary, a secondary or a tertiary carbon ...

METHODS FOR PRODUCING HELMET INSERTS WITH MATERIALS HAVING MULTIPLE MECHANISMS OF HARDENING

A method of forming a three-dimensional object, wherein said three-dimensional object is an insert for use between a helmet and a human body, is described. The method may use a polymerizable liquid, or resin, useful for the production by additive manufacturing of a three-dimensional object, comprising a mixture of (i) a light polymerizable liquid first component, and (ii) a second solidifiable component that is different from said first component. 1. A method of forming a three-dimensional object , wherein said three-dimensional object is an insert for use between a helmet and a human body , comprising:(a) providing a carrier and an optically transparent member having a build surface, said carrier and said build surface defining a build region therebetween;(b) filling said build region with a polymerizable liquid, said polymerizable liquid comprising a mixture of (i) a light polymerizable liquid first component, and (ii) a second solidifiable component that is different from said first component;(c) irradiating said build region with light through said optically transparent member to form a solid polymer scaffold from said first component and also advancing said carrier away from said build surface to form a three-dimensional intermediate having a shape of said insert, said three-dimensional intermediate containing said second solidifiable component carried in said scaffold in unsolidified and/or uncured form; and(d) subsequent to said irradiating step, heating, microwave irradiating, or both heating and microwave irradiating, second solidifiable component in said three-dimensional intermediate to form said insert.2. The method of claim 1 , wherein said second solidifiable component comprises a polymerizable liquid solubilized in or suspended in said first component.3. The method of claim 1 , wherein said second solidifiable component comprises:(i) a polymerizable solid suspended in said first component;(ii) a polymerizable solid solubilized in said first component; ...

PHOTOSENSITIVE RESIN COMPOSITION

A photosensitive resin composition which is excellent in chemical resistance and electrical insulation property and which can form a cured relief pattern having a cross-sectional shape of a forward taper after curing is provided. The present invention is a photosensitive resin composition, comprising 111-. (canceled)13. The photosensitive resin composition according to claim 12 , wherein the (meth)acryl group-containing compound (B) further comprises a polyfunctional (meth)acryl group-containing compound (B2).15. The photosensitive resin composition according to claim 13 , wherein the polyfunctional (meth)acryl group-containing compound (B2) is 50 to 300 parts by mass based on 100 parts by mass of the total amount of the polyfunctional (meth)acryl group-containing silane condensate (B1).16. The photosensitive resin composition according to claim 12 , wherein the acryl group-containing compound (B) is 20 to 70 parts by mass based on 100 parts by mass of the (A) alkali-soluble resin (A).17. A resin sheet formed from the photosensitive resin composition of .18. A cured relief pattern obtained by curing the photosensitive resin composition of claim 12 , wherein the relief pattern has a cross-sectional shape of a tapered shape with a taper angle of 45° or more and less than 90°.19. An interlayer insulating film claim 18 , comprising a layer of the relief pattern of .20. A passivation film claim 18 , comprising a layer of the relief pattern of .21. A method of producing an interlayer insulating film or a passivation film claim 18 , comprising the steps of:{'claim-ref': [{'@idref': 'CLM-00012', 'claim 12'}, {'@idref': 'CLM-00012', 'claim 12'}], 'forming a photosensitive resin composition layer or a resin layer on a substrate by a step of coating the photosensitive resin composition of on the substrate or a step of laminating a resin sheet formed from the photosensitive resin composition of on the substrate;'}forming a pattern by irradiation with ultraviolet rays and ...

FLOW CELLS

An example of a flow cell includes a substrate; a first primer set attached to a first region on the substrate, the first primer set including an un-cleavable first primer and a cleavable second primer; and a second primer set attached to a second region on the substrate, the second primer set including a cleavable first primer and an un-cleavable second primer. 1. A flow cell , comprising:a substrate;a first primer set attached to a first region on the substrate, the first primer set including an un-cleavable first primer and a cleavable second primer; anda second primer set attached to a second region on the substrate, the second primer set including a cleavable first primer and an un-cleavable second primer.2. The flow cell as defined in claim 1 , wherein:the first region includes a material having a first functional group; andthe second region includes a material having a second functional group that is different than the first functional group.3. The flow cell as defined in claim 1 , further comprising a gap separating the first primer set from the second primer set.4. The flow cell as defined in claim 1 , wherein:the substrate includes depressions separated by interstitial regions; and the first region located at a first portion; and', 'the second region located at a second portion., 'each of the depressions includes5. The flow cell as defined in claim 4 , further comprising a gap separating the first region from the second region.6. The flow cell as defined in claim 4 , wherein the first region and the second region partially overlap.7. The flow cell as defined in claim 4 , wherein the first and second portions have different depths.8. The flow cell as defined in claim 4 , wherein the first and second regions are different blocks of a block co-polymer.9. The flow cell as defined in claim 1 , wherein:the substrate includes depressions separated by interstitial regions;each of the depressions includes the first region; andthe second region is located on at ...

PHOTOSENSITIVE RESIN COMPOSITION AND PATTERN FORMING PROCESS

A white photosensitive resin composition comprising (A) an acid crosslinkable group-containing silicone resin, (B) a photoacid generator, and (C) a white pigment has a sufficient reflectivity, good reliability with respect to adhesion and crack resistance, resolution, flexibility, and light resistance. 1. A photosensitive resin composition comprising (A) an acid crosslinkable group-containing silicone resin , (B) a photoacid generator , and (C) a white pigment.2. The photosensitive resin composition of wherein the acid crosslinkable group is selected from epoxy claim 1 , oxetane claim 1 , and vinyl ether groups.4. The photosensitive resin composition of wherein 0 Подробнее

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND BLACK MATRIX

A black photosensitive resin composition comprising (A) an acid crosslinkable group-containing silicone resin, (B) carbon black, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved reliability with respect to adhesion and crack resistance, resolution and flexibility while maintaining satisfactory light shielding properties. 1. A photosensitive resin composition comprising (A) a base resin comprising an acid crosslinkable group-containing silicone resin , (B) carbon black , and (C) a photoacid generator.2. The photosensitive resin composition of wherein the acid crosslinkable group is a phenolic hydroxyl group or epoxy group.9. The photosensitive resin composition of claim 1 , containing 0.01 to 60% by weight of the carbon black (B).10. The photosensitive resin composition of claim 1 , further comprising (D) a crosslinker.11. The photosensitive resin composition of wherein the crosslinker is selected from the group consisting of melamine claim 10 , guanamine claim 10 , glycoluril and urea compounds having on the average at least two methylol and/or alkoxymethyl groups in the molecule claim 10 , amino condensates modified with formaldehyde or formaldehyde-alcohol claim 10 , phenol compounds having on the average at least two methylol or alkoxymethyl groups in the molecule claim 10 , and epoxy compounds having on the average at least two epoxy groups in the molecule.12. The photosensitive resin composition of claim 1 , further comprising (E) a solvent.13. The photosensitive resin composition of claim 1 , further comprising (F) a quencher.14. A photosensitive resin coating obtained from the photosensitive resin composition of .15. A photosensitive dry film comprising a support and the photosensitive resin coating of thereon.16. A pattern forming process comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(i) coating the photosensitive resin composition of onto a substrate to form a ...

SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING PHENYL GROUP-CONTAINING CHROMOPHORE

The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): 2. The silane according to claim 1 , wherein X is the oxygen atom and Y the sulfur atom.3. The silane according to claim 1 , wherein Y is the oxygen atom and X the sulfur atom.6. The silane according to claim 1 , wherein the sulfur atom is a sulfur atom of a sulfone group.7. The silane according to claim 1 , wherein the sulfur atom is a sulfur atom of a sulfonamide.8. The silane according to claim 1 , wherein n is an integer of 1 to 4.10. A resist underlayer film-forming composition for lithography claim 1 , the composition comprising the silane of Formula (1′).11. A method for manufacturing a semiconductor device claim 1 , the method comprising:{'claim-ref': {'@idref': 'CLM-00010', 'claim 10'}, 'applying the resist underlayer film-forming composition as claimed in onto a semiconductor substrate, and baking the applied resist underlayer film-forming composition to form a resist underlayer film;'}applying a resist composition onto the underlayer film to form a resist film;exposing the resist film to light;developing the resist after the exposure to obtain a resist pattern;etching the resist underlayer film with the resist pattern; andprocessing the semiconductor substrate with the patterned resist underlayer film.12. A method for manufacturing a semiconductor device claim 1 , the method comprising:forming an organic underlayer film on a semiconductor substrate;{'claim-ref': {'@idref': 'CLM-00010', 'claim 10'}, 'applying the resist underlayer film- ...

PHOTOPOLYMER COMPOSITION

Provided is a photopolymer composition for hologram recording comprising: 2. The photopolymer composition according to claim 1 ,{'sub': 1', '4, 'wherein in Chemical Formula 1, at least one of Rto Ris selected from the group consisting ofan alicyclic or aromatic heterocycle having 4 to 20 carbon atoms containing at least one of oxygen, sulfur or nitrogen;a cycloalkyl group having 4 to 20 carbon atoms; andan aromatic hydrocarbon group having 6 to 20 carbon atoms substituted with an alicyclic or aromatic heterocycle having 4 to 20 carbon atoms containing one or more of oxygen, sulfur or nitrogen.3. The photopolymer composition according to claim 1 ,wherein in Chemical Formula 1:{'sub': 2', '3, 'Rand Rare each independently hydrogen, an alkyl group having 1 to 20 carbon atoms, or a halogen; and'}{'sub': 1', '4, 'one of Rand Ris an amine group and the other is selected from the group consisting ofan alicyclic or aromatic heterocycle having 4 to 20 carbon atoms containing at least one of oxygen, sulfur or nitrogen;a cycloalkyl group having 4 to 20 carbon atoms; andan aromatic hydrocarbon group having 6 to 20 carbon atoms substituted with an alicyclic or aromatic heterocycle having 4 to 20 carbon atoms containing at least one of oxygen, sulfur or nitrogen.4. The photopolymer composition according to claim 1 ,wherein in Chemical Formula 1:{'sub': 2', '3, 'Rand Rare each independently an alkoxy group having 1 to 5 carbon atoms; and'}{'sub': 1', '4, 'Rand Rare each independently selected from the group consisting ofan alicyclic or aromatic heterocycle having 4 to 20 carbon atoms containing at least one of oxygen, sulfur or nitrogen;a cycloalkyl group having 4 to 20 carbon atoms substituted with an alicyclic or aromatic heterocycle having 4 to 20 carbon atoms containing one or more of oxygen, sulfur or nitrogen; andan aromatic hydrocarbon group having 6 to 20 carbon atoms substituted with an alicyclic or aromatic heterocycle having 4 to 20 carbon atoms containing one or more ...

PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND USES THEREOF

The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D). 1. A photosensitive polysiloxane composition comprising:a polysiloxane (A);an o-naphthoquinone diazide sulfonic acid ester (B);an alkali-soluble resin containing a silyl group (C); anda solvent (D).3. The photosensitive polysiloxane composition according to claim 1 , wherein the polysiloxane (A) is copolymerized by a compound represented by Formula (4) claim 1 ,{'br': None, 'sub': a', 'W', 'b', '4-W, 'Si(R)(OR)\u2003\u2003Formula (4),'}wherein:{'sub': a', 'a', 'a, 'Rrepresents hydrogen, an alkyl group containing 1 to 10 carbon atoms, an alkenyl group containing 2 to 10 carbon atoms, an aryl group containing 6 to 15 carbon atoms, an alkyl group containing an acid anhydride group, an alkyl group containing an epoxy group, or an alkoxy group containing an epoxy group; when Ris plural, each Ris the same or different;'}{'sub': b', 'b', 'b, 'Rrepresents hydrogen, an alkyl group containing 1 to 6 carbon atoms, an acyl group containing 1 to 6 carbon atoms, an aryl group containing 6 to 15 carbon atoms; when Ris plural, each Ris the same or different; and'}w represents an integer from 0 to 3.4. The photosensitive polysiloxane composition according to claim 3 , wherein at least one of Rrepresents the alkyl group containing the acid anhydride group claim 3 , the alkyl group containing the epoxy group claim 3 , or the alkoxy group ...

Nadic anhydride polymers and photosensitive compositions derived therefrom

Various vinyl addition polymers of nadic anhydride are disclosed. Examples of such polymers include copolymers and terpolymers of nadic anhydride with a wide variety of norbornene-type monomers. The nadic anhydride polymers are found to be useful in forming a wide variety of photosensitive compositions, both positive and negative, which are capable of forming high resolution imageable films exhibiting excellent dielectric properties (low-k) and thermal properties, and thus are useful in the fabrication of a variety of microelectronic and optoelectronic devices, among others.

WATER-DEVELOPABLE FLEXOGRAPHIC PRINTING ORIGINAL PLATE

The present invention aims to provide a flexographic printing original plate which exhibits improved sustainability of the ability of preventing the plate surface from staining. According to the present invention, there is provided a water-developable flexographic printing original plate including at least a support and a photosensitive resin layer provided on the support, in which the photosensitive resin layer contains a water-dispersible latex, a photopolymerizable unsaturated compound, a photopolymerization initiator, and a silicone compound. When the water-dispersible latex is one or more latex rubbers selected from the group consisting of polybutadiene rubber and poly(nitrile-butadiene) rubber, the silicone compound is a silicone compound having an amino group in the molecule and has a refractive index of 1.44 to 1.60. When the water-dispersible latex is poly(styrene-butadiene) rubber, the silicone compound is a silicone compound having an amino group in the molecule and has a refractive index of 1.47 to 1.63. 1. A water-developable flexographic printing original plate including at least a support and a photosensitive resin layer provided on the support , in which the photosensitive resin layer contains a water-dispersible latex , a photopolymerizable unsaturated compound , a photopolymerization initiator , and a silicone compound , in which the water-dispersible latex is one or more latex rubbers selected from the group consisting of polybutadiene rubber and poly(nitrile-butadiene) rubber , and in which the silicone compound is a silicone compound having an amino group in the molecule and has a refractive index of 1.44 to 1.60.2. A water-developable flexographic printing original plate including at least a support and a photosensitive resin layer provided on the support , in which the photosensitive resin layer contains a water-dispersible latex , a photopolymerizable unsaturated compound , a photopolymerization initiator , and a silicone compound , in which ...

PHOTORESIST AND METHODS OF PREPARING AND USING THE SAME

Disclosed is a photoresist comprising 1 to 90 parts of hydroxyl-containing or carboxyl-containing film-forming resin, 1 to 99 parts of silicon-containing vinyl ether monomer, and an organic solvent capable of dissolving the aforesaid substances. Disclosed is also methods of preparing and using the photoresist. 1. A photoresist comprising 1 to 90 parts by weight of a film-forming resin , 1 to 99 parts by weight of a silicon-containing vinyl ether monomer , and an organic solvent capable of dissolving the aforesaid substances , wherein the film-forming resin is selected from the group consisting of a hydroxyl-containing film-forming resin and a carboxyl-containing film-forming resin.2. The photoresist of wherein the hydroxyl-containing film-forming resin comprises a phenolic hydroxyl-containing film-forming resin.3. The photoresist of wherein the carboxyl-containing film-forming resin comprises at least one selected from the group consisting of novolacs having pendant carboxyl groups claim 1 , carboxyl-containing polyacrylate-based resins claim 1 , and poly(vinyl acetal)carboxylic acid anhydride resin esters.6. (canceled)7. The photoresist of further comprising total 0.1 to 10 parts by weight of a photoacid generator and a dye.8. (canceled)9. The photoresist of wherein the photoacid generator comprises at least one selected from the group consisting of onium-based claim 7 , arene-cyclopentadienyl iron-based claim 7 , oxime sulfate-based and triazine-based photoacid generators.10. The photoresist of comprising:1 to 5 parts by weight of the phenolic hydroxyl-containing or carboxyl-containing film-forming resin;5 to 9 parts by weight of the silicon-containing vinyl ether monomer;0.5 to 0.8 parts by weight of photoacid generator and the dye; and300 to 340 parts by weight of the organic solvent.11. The photoresist of further comprising 0.1 to 15 parts by weight of a crosslinking agent.13. A method of preparing a photoresist comprising:dissolving 1 to 90 parts by weight of ...

SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM

A silicone structure-bearing polymer comprising recurring units derived from a bis(4-hydroxy-3-allylphenyl) derivative and having a Mw of 3,000-500,000 is provided. A chemically amplified negative resist composition comprising the polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates. 3. The polymer of wherein in formula (1) claim 1 , 0.1≦a≦0.8 claim 1 , 0.1≦b≦0.8 claim 1 , 0≦c claim 1 , 0≦d claim 1 , 0 Подробнее

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RESIN FILM, AND SEMICONDUCTOR DEVICE

Provided is a photosensitive resin composition containing: one or more kinds of alkali-soluble from a polyimide, a polybenzoxazole, a polyimide precursor, a polybenzoxazole precursor, and a copolymer formed of two or more polymers selected from the preceding substances; and a photosensitizer. The photosensitive resin composition further contains a compound represented by general formula (1). Even when a cured film is fired at low temperature, the photosensitive resin composition exhibits superior adhesion properties with metallic materials, particularly copper, and also exhibits high chemical resistance. 2. The photosensitive resin composition according to claim 1 , comprising 0.1 to 5.0 parts by weight of the compound represented by the general formula (1) relative to 100 parts by weight of the alkali-soluble resin.3. The photosensitive resin composition according to claim 1 , wherein X in the compound represented by the general formula (1) is a sulfur atom.4. The photosensitive resin composition according to claim 1 , wherein at least one of Rand Rin the compound represented by the general formula (1) is an organic group containing an alkoxysilyl group.6. The photosensitive resin composition according to claim 5 , wherein the alkali-soluble resin including the structure represented by the general formula (2) contains a phenolic hydroxyl group.7. The photosensitive resin composition according to claim 5 , wherein the alkali-soluble resin represented by the general formula (2) contains 30 mol % or more organic groups containing a fluorine atom relative to the total amount of the organic groups of both Rand Ras 100 mol %.8. The photosensitive resin composition according to claim 5 , wherein the alkali-soluble resin represented by the general formula (3) contains 30 mol % or more organic groups containing a fluorine atom relative to the total amount of the organic groups of both Rand Ras 100 mol %.9. The photosensitive resin composition according to claim 1 , wherein ...

Methods of producing three-dimensional objects from materials having multiple mechanisms of hardening

A method of forming a three-dimensional object is carried out by: (a) providing a carrier and an optically transparent member having a build surface, the carrier and the build surface defining a build region therebetween; (b) filling the build region with a polymerizable liquid, the polymerizable liquid including a mixture of (i) a light polymerizable liquid first component, and (ii) a second solidifiable component that is different from the first component; (c) irradiating the build region with light through the optically transparent member to form a solid polymer scaffold from the first component and also advancing the carrier away from the build surface to form a three-dimensional intermediate having the same shape as, or a shape to be imparted to, the three-dimensional object, and containing the second solidifiable component carried in the scaffold in unsolidified and/or uncured form; and (d) concurrently with or subsequent to the irradiating step, solidifying and/or curing the second solidifiable component in the three-dimensional intermediate to form the three-dimensional object.

Template, method for fabricating template, and method for fabricating semiconductor device

A template includes: a base material having a principal surface; a mesa structure provided on the principal surface and having a first surface; and a silicon film that is provided on the first surface of the mesa structure, has a projection-and-depression pattern, and is made of a material different from a material for the base material.

Positive tone photopatternable silicone

A method for producing a patterned silicone layer; said method comprising steps of: (a) depositing on a substrate a composition comprising: (i) a polysiloxane comprising alkenyl groups, (ii) a silane crosslinker comprising silicon-hydrogen bonds, (iii) a hydrosilylation catalyst, and (iv) a photolatent amine generator, to form an uncured resin; (b) exposing the uncured resin to ultraviolet light or electron beam irradiation through a mask to produce a patterned resin; (c) heating the patterned resin; and (e) removing at least a part of the uncured portion of the patterned resin to produce a final patterned silicone layer.

Semiconductor Devices and Methods of Manufacturing

A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy. 1. A method of manufacturing a semiconductor device , the method comprising:applying a photoresist over a conductive material;forming an anti-reflective layer between the photoresist and the conductive material; andimaging the photoresist after the forming the anti-reflective layer.2. The method of claim 1 , wherein the photoresist comprises an anti-reflective molecule.3. The method of claim 2 , wherein the anti-reflective molecule is a thiol.4. The method of claim 2 , wherein the anti-reflective molecule comprises:a dye structure; anda reactive structure.5. The method of claim 4 , wherein the reactive structure is a SH group.6. The method of claim 2 , wherein during the applying the photoresist the anti-reflective molecule has a concentration of between about 0.01%-weight and 0.3%-weight.7. The method of claim 2 , wherein during the applying the photoresist the anti-reflective molecule will react with the conductive material.8. A method of manufacturing a semiconductor device claim 2 , the method comprising:applying a photoresist to a conductive surface;reacting the conductive surface with an anti-reflective additive within the photoresist to form a reacted surface;patterning the photoresist with a patterned energy source;developing the photoresist, the developing the photoresist exposing a portion of the reacted ...

Photosensitive resin composition

Regarding cured pattern films for semiconductor apparatuses, the present invention provides a photosensitive resin composition that is high in sensitivity and able to realize improved contact between a cured pattern film and metal wiring after a reflow process. The photosensitive resin composition includes an alkali-soluble resin which contains at least one selected from the group consisting of a resin (a-1) which contains, as primary component, a structure as represented by the undermentioned general formula (1), polyimides (a-2) and copolymers thereof, and a compound (c) which contains, as primary component, a structure as represented by the undermentioned general formula (2). (In general formula (1), R 1 and R 2 may be identical to or different from each other and each represent a divalent to octavalent organic group having 2 or more carbon atoms; R 3 and R 4 may be identical to or different from each other and each represent either a hydrogen atom or an organic group having 1 to 20 carbon atoms; n is an integer of 10 to 100,000; m and f are independently an integer of 0 to 2; p and q are independently an integer of 0 to 4; and m+q≠0 and p+q≠0.) (In general formula (2), R 5 , R 6 , and R 7 may be identical to or different from each other and each represent either a hydrogen atom or a monovalent organic group having 1 or more carbon atoms, and at least one of R 5 , R 6 , and R 7 is a monovalent organic group having 1 or more carbon atoms.)

METHOD FOR REDUCING CHARGE IN CRITICAL DIMENSION-SCANNING ELECTRON MICROSCOPE METROLOGY

Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (SEM) metrology of a critical dimension (CD) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure. When the lithography structure comprising the silicon-comprising under layer is scanned for CDs using SEM, the under layer reduces or eliminates charge buildup during SEM metrological observations. 1. A method for reducing charging and/or shrinkage in a surface of interest during measurement of the surface in the manufacture of an integrated device , the method comprising:(a) providing a substrate;(b) positioning a silicon-comprising under layer on the substrate;(c) positioning a patterned photoresist image layer on the under layer;(d) delivering an electron beam to the surface of interest; and(e) measuring the surface of interest with the electron beam, thereby reducing charging and/or shrinkage.2. The method of wherein the surface is lithographically fabricated.3. The method of wherein the silicon-comprising under layer comprises a nondoped or doped conjugated or conducting polymer comprising silicon.4. The method of wherein the silicon-comprising under layer comprises a silicon-containing antireflection coating (SiARC).5. The method of wherein (b) claim 1 , positioning a silicon-comprising under layer on the substrate claim 1 , comprises depositing an organic layer and depositing silicon on the organic layer.6. The method of wherein depositing silicon on the organic layer comprises vapor-depositing silicon on the organic layer or silylating the organic layer.7. The method of wherein the substrate comprises silicon.8. The method of wherein the substrate comprising silicon is a silicon wafer.9. The method of wherein (c) claim 1 , positioning the patterned photoresist image layer on the silicon-comprising under layer claim 1 , comprises spin coating the photoresist image layer on ...

SUBSTRATE TREATING COMPOSITION AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol. 1. A substrate treating composition , comprising a first monomer , a second monomer and an acid , wherein{'claim-text': {'br': None, 'sub': '2', '#text': 'X—Si(R1)(R2) \u2003\u2003[Formula 1]'}, '#text': 'the first monomer is represented by Formula 1:'}{'claim-text': {'br': None, 'sub': '3', '#text': 'Y—Si(R3)\u2003\u2003[Formula 7]'}, '#text': 'wherein each of R1 and R2 is an alkyl group of 1 to 20 carbon atoms or an alkoxy group of 1 to 20 carbon atoms, and X is i) a cyclic amine or an organic group comprising the same, or ii) an alkyl group of 1 to 20 carbon atoms, in which at least one hydrogen atom is substituted with an amino group, a phenyl group in which at least one hydrogen atom is substituted with an amino group or a hydroxyl group, an ester bond, or a combination thereof, the second monomer is represented by Formula 7:'}wherein R3 is an alkoxy group of 1 to 20 carbon atoms, and Y is i) a cyclic amine or an organic group comprising the same, or ii) an alkyl group of 1 to 20 carbon atoms, in which at least one hydrogen atom is substituted with an amino group, a sulfide bond, an ether bond, an alkyl group of 1 to 20 carbon atoms, which is bonded to a sulfonyl group, or a combination thereof, anda molecular weight of a solid content of the substrate treating composition comprising the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.2. The substrate treating composition of claim 1 , wherein X is bonded to a Si atom via a Si—C bond claim 1 , and Y is bonded to a Si atom via a Si—C bond.4. The ...

Alkali-soluble resin, photosensitive resin composition, photosensitive sheet, cured film, interlayer insulating film or semiconductor protective film, production method for relief pattern of cured film, and electronic component or semiconductor device

The present invention provides an alkali-soluble resin with which a cured film having high extensibility, reduced stress, high adhesion to a metal, and high heat resistance can be obtained, and a photosensitive resin composition containing the alkali-soluble resin, and the present invention is an alkali-soluble resin (A) including a structure represented by a general formula (1) wherein X1 represents a divalent organic group having 2 to 100 carbon atoms, Y1 and Y2 each represent a divalent to hexavalent organic group having 2 to 100 carbon atoms, X2 represents a tetravalent organic group having 2 to 100 carbon atoms, p and q each represent an integer in a range of 0 to 4, and n1 and n2 each represent an integer in a range of 5 to 100,000, wherein (I) and (II) described below are satisfied: (I) an organic group having an aliphatic chain having 8 to 30 carbon atoms is contained as X1 of the general formula (1) at a content of 30 to 70 mol % based on 100 mol % of a total of X1 and X2, and (II) an organic group having a diphenyl ether structure is contained as Y1 of the general formula (1) at a content of 1 to 30 mol % based on 100 mol % of a total of Y1 and Y2.

Hard mask-forming composition and method for manufacturing electronic component

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

Composition for forming silicon-containing resist underlayer film having carbonyl structure

A composition for forming a resist underlayer film that mask residues after lithography can be removed only with a chemical without etching. A composition for forming a silicon-containing resist underlayer film, that includes a polysiloxane having a unit structure including a carbonyl group-containing functional group, wherein the silicon-containing resist underlayer film is used as a mask layer in a step of removing the mask layer with a hydrogen peroxide-containing chemical after transfer of a pattern to an underlayer by a lithography process. The composition for forming a silicon-containing resist underlayer film, wherein the unit structure including a carbonyl group-containing functional group may include a cyclic acid anhydride group, a cyclic diester group, or a diester group. The polysiloxane may further have a unit structure including an amide group-containing organic group. The amide group may be a sulfonamide group or a diallyl isocyanurate group.

METHOD FOR FORMING RESIST UNDERLAYER FILM

A method forms a resist underlayer film that has high resistance to dry etching using a gas containing a fluorocarbon. A method for forming a resist underlayer film includes the steps of: applying to a substrate a resist underlayer film-forming composition containing a fullerene derivative in which one to six molecules of malonic acid diester of the following Formula (1): 2. The method for forming a resist underlayer film according to claim 1 , wherein the temperature in baking under the atmosphere is 750° C. or lower.3. The method for forming a resist underlayer film according to claim 1 , wherein an oxygen concentration under the atmosphere is 0.01 ppm to 100 ppm.4. The method for forming a resist underlayer film according to claim 1 , wherein the resist underlayer film-forming composition further contains a surfactant.5. A method for forming a pattern comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying an intermediate layer-forming composition to the resist underlayer film formed by the method according to , followed by baking, to form a silicon-containing intermediate layer;'}forming a resist film on the silicon-containing intermediate layer;carrying out at least exposure and development for the resist film to form a resist pattern; anddry etching the silicon-containing intermediate layer using a gas containing a fluorocarbon through the resist pattern serving as a mask. The present invention relates to a method for forming a resist underlayer film used in a lithography process that is a film obtained from a composition containing a fullerene derivative as a solid content.In a lithography process for production of a semiconductor device, a technology of forming a resist pattern in a desired shape by providing a resist underlayer film before formation of a photoresist film has been known. The following Patent Documents 1 and 2 describe a resist underlayer film-forming composition prepared using a fullerene derivative. In the ...

A PHOTOSENSITIVE COMPOSITION AND COLOR CONVERTING FILM

The present invention relates to a photosensitive composition comprising at least one nanosized fluorescent material and polysiloxane, to a color conversion film, and to a use of the color conversion film in an optical device. The invention further relates to an optical device comprising the color conversion film and a method for preparing the color conversion film and the optical device. 1. A photosensitive composition , wherein the photosensitive composition comprises at least one nanosized fluorescent material , polysiloxane , and a (meth)acrylic polymer.2. The photosensitive composition according to claim 1 , wherein the photosensitive composition further comprises a wetting and dispersing additive.3. A photosensitive composition claim 1 , wherein the photosensitive composition comprises at least one nanosized fluorescent material claim 1 , wetting and dispersing additive claim 1 , polysiloxane claim 1 , and solvent.4. The photosensitive composition according to claim 3 , wherein the photosensitive composition further comprises a (meth)acrylic polymer.5. The photosensitive composition according to claim 1 , wherein the photo sensitive composition is a negative type photosensitive composition comprising a polymerization initiator.6. The photosensitive composition according to claim 1 , wherein the photosensitive composition further comprises a chemical compound including two or more of (meth)acryloyl groups.7. The photosensitive composition according to claim 1 , wherein the polysiloxane comprises a silsesquioxane unit represented by following chemical formula I:{'br': None, 'sub': 1.5', 'x, '(RSiO)\u2003\u2003Chemical formula I'}(wherein the chemical formula I, R is non-hydrolysable group selected from the group consisting of hydrogen, substituted or unsubstituted alkyl group, substituted or unsubstituted aryl group, substituted or unsubstituted aralkyl group, and substituted or unsubstituted heterocyclic group; and the symbol x is an integer.)8. The ...

Positive Photosensitive Resin Composition, and Photosensitive Resin Film and Display Device Prepared by Using the Same

Disclosed are a positive photosensitive resin composition including (A) an alkali soluble resin; (B) a photosensitive diazoquinone compound; (C) a first dissolution-controlling agent including at least one of compounds represented by the following Chemical Formula 1 or Chemical Formula 2; (D) a second dissolution-controlling agent including a compound represented by the following Chemical Formula 3; and (E) a solvent, and a photosensitive resin film and a display device using the same.

PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND USES THEREOF

The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The photosensitive polysiloxane composition has excellent chemical resistance. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), a thermal base generator (C) and a solvent (D). 2. The photosensitive polysiloxane composition according to claim 1 , wherein the polysiloxane (A) is a copolymer obtained by hydrolyzing and partial condensing a silane monomer component represented by Formula (4);{'br': None, 'sub': a', 'W', 'b', '4-w, 'Si(R)(OR)\u2003\u2003Formula (4),'}wherein:{'sub': a', 'a', '1', '10', '2', '10', '6', '15', 'a, 'at least one of Rrepresents an alkyl group substituted with an acid anhydride group, an alkyl group substituted with an epoxy group and/or an alkoxy group substituted with an epoxy group; other Rrepresents a hydrogen atom, a C-Calkyl group, a C-Calkenyl group, a C-Caryl group; each Ris the same or different;'}{'sub': b', '1', '6', '1', '6', '6', '15', 'b, 'Rrepresents a hydrogen atom, a C-Calkyl group, a C-Cacyl group, a C-Caryl group; each Ris the same or different; and'}w represents an integer from 0 to 3.3. The photosensitive polysiloxane composition according to claim 1 , wherein based on 100 parts by weight of the used amount of the polysiloxane (A) claim 1 , the used amount of the o-naphthoquinone diazide sulfonic acid ester (B) is from 1 part by weight to 30 parts by weight.4. The photosensitive polysiloxane composition according to claim 1 , wherein based on 100 parts by weight of the used amount of the polysiloxane (A) claim 1 , the used amount of the thermal base generator (C) is from 0.05 parts by weight to 20 parts by weight.5. The photosensitive ...

SOLUTION COMPOSITION FOR PASSIVATION LAYER, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR ARRAY PANEL

A passivation layer solution composition is provided A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. 2. The method of claim 1 , whereinthe solution including the organic siloxane resin represented by Chemical Formula 1 includes at least one of propylene glycol monomethylether and propylene glycol monoethylacetate.3. The method of claim 2 , whereinthe solution including the organic siloxane resin represented by Chemical Formula 1 includes from about 4 wt % to about 25 wt % of the organic siloxane resin.4. The method of claim 3 , whereinin Chemical Formula 1, each of the R groups is independently selected from the group consisting of a methyl group, a vinyl group, and a phenyl group.5. The method of claim 4 , whereinthe organic siloxane resin has a molecular weight of from about 100 to about 10,000.6. The method of claim 1 , whereinthe semiconductor layer is formed of an oxide semiconductor.7. The method of claim 6 , whereinthe gate line is formed of a lower layer including at least one of titanium, tantalum, and molybdenum; and an upper layer including copper or a copper alloy.8. The method of claim 7 , whereinthe data line is formed of a lower layer including at least one of titanium, tantalum, and molybdenum; and an upper layer including copper or a copper alloy. This application is a Divisional of U.S. application Ser. No. 13/534,752 filed on Jun. 27, 2012 which claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2011-0106990 filed in the Korean Intellectual Property Office on Oct. 19, 2011, the disclosure of which is incorporated by reference herein in its entirety.The present invention relates to a passivation layer solution composition, a thin film transistor array panel and a method for manufacturing the thin film transistor array panel.Generally, a thin film transistor (TFT) array panel is used as a circuit ...

Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby

The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS

A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. 6. The photosensitive resin composition of wherein the filler (B) is silica or silicone powder having an average particle size of 0.01 to 20 μm.7. The photosensitive resin composition of wherein the filler (B) is present in an amount of 20 to 90% by weight of the composition.8. The photosensitive resin composition of claim 1 , further comprising (D) a crosslinker.9. The photosensitive resin composition of wherein the crosslinker (D) is at least one compound selected from the group consisting of an amino condensate modified with formaldehyde or formaldehyde-alcohol claim 8 , a phenol compound having on the average at least two methylol or alkoxymethylol groups in the molecule claim 8 , and an epoxy compound having on the average at least two epoxy groups in the molecule.10. The photosensitive resin composition of claim 1 , further comprising (E) a solvent.11. The photosensitive resin composition of claim 1 , further comprising (F) a basic compound.12. A photosensitive resin coating formed of the photosensitive resin composition of .13. A photosensitive dry film comprising a support film and the photosensitive resin coating of thereon.14. A laminate comprising a substrate having grooves and/or holes having an opening width of 10 to 100 μm and a depth of 10 to 120 μm and the photosensitive resin coating of thereon.15. A pattern forming process comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(i) coating the photosensitive resin composition of onto a substrate to form a photosensitive resin coating thereon,'}(ii) exposing a ...

SILICONE STRUCTURE-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS

A photosensitive resin composition comprising a silicone structure-containing polymer having crosslinking groups or crosslinking reaction-susceptible reactive sites in the molecule is coated onto a substrate to form a photosensitive resin coating which has improved substrate adhesion, a pattern forming ability, crack resistance, heat resistance, and reliability as protective film. 7. A photosensitive resin composition comprising (A) a base resin containing the silicone structure-containing polymer of and (B) a photoacid generator.8. The photosensitive resin composition of claim 7 , further comprising (C) a crosslinker.9. The photosensitive resin composition of wherein the crosslinker (C) is at least one compound selected from the group consisting of an amino condensate modified with formaldehyde or formaldehyde-alcohol claim 8 , a phenol compound having on the average at least two methylol or alkoxymethylol groups in the molecule claim 8 , and an epoxy compound having on the average at least two epoxy groups in the molecule.10. The photosensitive resin composition of claim 7 , further comprising (D) a solvent.11. The photosensitive resin composition of claim 7 , further comprising (E) a basic compound.12. A photosensitive resin coating formed of the photosensitive resin composition of .13. A photosensitive dry film comprising a support film and the photosensitive resin coating of thereon.14. A laminate comprising a substrate having grooves and/or holes having an opening width of 10 to 100 μm and a depth of 10 to 120 μm and the photosensitive resin coating of thereon.15. A pattern forming process comprising the steps of:{'claim-ref': {'@idref': 'CLM-00007', 'claim 7'}, '(i) coating the photosensitive resin composition of onto a substrate to form a photosensitive resin coating thereon,'}(ii) exposing a predetermined region of the photosensitive resin coating to radiation through a photomask and post-exposure baking, and(iii) developing the photosensitive resin coating ...

PHOTOSENSITIVE SILOXANE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

To provide a photosensitive siloxane composition capable of forming a pattern having a desired taper angle and a desired linewidth. 3. The composition according to claim 1 , wherein said polysiloxane (Pa) comprises a block in which two or more of said structures represented by the formula (ia′) are directly combined with each other.4. The composition according to claim 3 , wherein the number of said structures represented by the formula (ia′) included in said blocks is 10 mol % or more based on the total number of all those contained in said polysiloxane (Pa).5. The composition according to claim 1 , further comprising a polysoloxane (Pb) which contains the repeating unit represented by the formula (ia) but does not contain the structure represented by the formula (ia′).6. The composition according to claim 5 , wherein said polysoloxane (Pb) further contains the repeating unit represented by said formula (ib).7. The composition according to claim 1 , wherein said polysoloxane (Pa) or (Pb) has a mass average molecular weight of 500 to 25 claim 1 ,000.8. The composition according to claim 1 , wherein the number of said structures represented by the formula (ia′) is 0.5 to 50% based on the total number of all the repeating units contained in the whole of the polysiloxanes.9. The composition according to claim 1 , wherein the summed number of both the repeating units (ia) serving as a part of (ia′) in the polysiloxane (Pa) and those (ia) not connecting to another (ia) via said R is 60 mol % or more based on the total number of all the repeating units (ia) contained in the polysiloxane (Pa).11. The composition according to claim 1 , wherein the containing ratio of said photoactive agent is 20 parts by mass or less based on the 100 parts by mass of the polysiloxane.12. The composition according to claim 1 , which is a positive type photosensitive composition.13. The composition according to claim 1 , which is a negative type photosensitive composition.14. A pattern ...

POLYMER COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND PRODUCTION METHOD THEREOF, LAYERED PRODUCT, PATTERNING PROCESS, AND SUBSTRATE

A polymer compound has a carboxyl group and a siloxane chain and is obtained in the presence of an acid catalyst by condensation of at least; (I) a siloxane compound having phenol groups at both terminals, as shown by formula (1), (II) phenols shown by formula (2) and/or phenols shown by formula (3), and (III) one or more kinds of aldehydes and ketones shown by the following general formula (4). A polymer compound can be used suitably as a base resin of a chemically amplified negative resist composition with which the problem of delamination generated on metal wires, an electrode, and a substrate, can be improved, and with which a fine pattern can be formed without generating a scum and a footing profile in the pattern bottom and on the substrate, using a widely used aqueous 2.38% TMAH solution as a developer. 8. The polymer compound according to claim 2 , wherein one of the aldehydes and the ketones shown by the general formula (5) is formaldehyde.10. The polymer compound according to claim 9 , wherein in the general formula (12) claim 9 , “d” represents 0 Подробнее

Photopatternable Materials and Related Electronic Devices and Methods

The present inorganic-organic hybrid materials can be patterned with relatively low photo-exposure energies and are thermally stable, mechanically robust, resist water penetration, and show good adhesion to metal oxides, metals, metal alloys, as well as organic materials. The present materials can be solution-processed (e.g., by spin-coating), and can exhibit good chemical (e.g., solvent and etchant) resistance in the cured form. 1. A solution-processable composition for preparing a photopatternable material , the composition comprising: {'br': None, 'sup': 1', '2, 'sub': m', 'n', '1.5', 'q, 'RR(SiO),'}, '(a) a functionalized oligomeric siloxane component, wherein the functionalized oligomeric siloxane component comprises, based on its total weight, between about 40% by weight and about 100% by weight one or more cage-structured polyhedral oligomeric silsesquioxanes of the formulawherein:{'sup': '1', 'each Rindependently is an organic group comprising at least one crosslinkable moiety;'}{'sup': '2', 'each Rindependently is a non-crosslinkable organic group;'}q is 8, 10 or 12; andm and n are integers, provided that m+n=q and m is at least 1;(b) a polymerization initiator;(c) one or more thermosettable polymers, wherein the one or more thermosettable polymers collectively are present in an amount between about 1% by weight and about 20% by weight based on the total weight of the functionalized oligomeric siloxane component; and(d) a solvent.2. The composition of claim 1 , wherein said functionalized oligomeric siloxane component comprises claim 1 , based on its total weight claim 1 , less than about 40% by weight non-cage structured functionalized oligomeric siloxanes claim 1 , and wherein said non-cage structured functionalized oligomeric siloxanes have identical Rand Rgroups as the polyhedral oligomeric silsesquioxane.3. The composition of claim 1 , wherein said non-cage structured functionalized oligomeric siloxanes comprise random-structured functionalized ...

Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition

A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent; and a pattern forming method using the positive resist composition.

CROSSLINKING AGENT COMPOUND, PHOTOSENSITIVE COMPOSITION COMPRISING THE SAME, AND PHOTOSENSITIVE MATERIAL USING THE SAME

The present invention relates to a crosslinking agent compound in which a terminal crosslinkable functional group is capped with a silane-based protecting group, a photosensitive composition including the same, and a photosensitive material using the same. 3. The crosslinking agent compound according to claim 1 , wherein in the Chemical Formula 1 claim 1 ,{'sub': 1', '2, 'Land Lare each independently an alkylene group having 1 to 5 carbon atoms.'}6. (canceled)7. A photosensitive composition comprising the crosslinking agent compound of .10. The photosensitive composition according to claim 9 , wherein a content of the compound represented by the Chemical Formula 4 is 0.001 parts by weight to 10 parts by weight based on 100 parts by weight of the crosslinking agent compound represented by the Chemical Formula 1.13. A photosensitive material comprising a cured product of the photosensitive composition of claim.15. A photosensitive material comprising a cured product of the photosensitive composition of . This application is a 35 U.S.C. 371 National Phase Entry Application from PCT/KR2019/009191 filed on Jul. 24, 2019, designating the United States, which claims the benefit of the filing date of Korean Patent Application No. 10-2018-0167760 filed on Dec. 21, 2018, the entire contents of which are incorporated herein by reference.The present invention relates to a crosslinking agent compound having excellent crosslinkability and improved solubility in solvents, a photosensitive composition capable of realizing excellent mechanical strength and storage stability during the synthesis of a photosensitive material, and a photosensitive material using the same.A photosensitive resin is a representative functional polymer material that has been put into practical use in the production of various precision electronics and information industry products, and is currently used importantly in the advanced technology industry, especially in the production of semiconductors and ...