12-08-2021 дата публикации
Номер: US20210247721A1
A one-piece silicon device with flexible blades (), in particular for timepieces, for example a pivot with crossed blades, and to a method for manufacturing the device (). The method includes: forming () a one-piece silicon device () blank from a wafer of the SOI type, the device () including two flexible blades (), each formed in a different layer of the SOI wafer, the blades () being arranged in two different substantially parallel planes, the blades () being separated by a clearance (); growing a first silicon oxide layer on the surface of at least one of the blades () bordering the clearance, the first silicon oxide layer being formed from a first sub-layer of silicon of the one or more blades (); and removing the first silicon oxide layer to increase the clearance () between the two blades (). 120123. A method () for manufacturing a one-piece silicon device () with flexible blades ( , ) , in particular for timepieces , for example a pivot with crossed blades , comprising the following steps of:{'b': 21', '1', '1', '2', '3', '2', '3', '2', '3', '7, 'forming () a one-piece silicon device () blank from a wafer of the SOI type, the device () comprising two flexible blades (, ), each formed in a different layer of the SOI wafer, the blades (, ) being arranged in two different substantially parallel planes, the blades (, ) being separated by a clearance (),'}{'b': 23', '15', '2', '3', '7', '15', '2', '3, 'growing () a first silicon oxide layer () on the surface of at least one of the blades (, ) bordering the clearance (), the first silicon oxide layer () being formed from a first sub-layer of silicon of the one or more blades (, ), and'}{'b': 24', '15', '7', '2', '3, 'removing () the first silicon oxide layer () to increase the clearance () between the two blades (, ).'}2. The manufacturing method according to claim 1 , further comprising the following steps of:{'b': 25', '17', '2', '3', '7', '17', '2', '3, 'growing () a second silicon oxide layer () on the surface ...
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