Process for producing zinc oxide varistor

A process for producing zinc oxide varistors possessed a property of breakdown voltage (V1mA) ranging from 230 to 1,730 V/mm is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintered powder through two independent procedures, so that the doped zinc oxide and the high-impedance sintered powder are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess breakdown voltage ranging from 230 to 1,730 V/mm.

Ceramic Material, Varistor, and Method for Producing the Ceramic Material and the Varistor

In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si as a first dopant and second dopants having at least one compound containing a metal cation from Al, B, or Ba, wherein a corresponds to a molar proportion of Bi calculated as BiO, b corresponds to a molar proportion of Y calculated as YO, c corresponds to a molar proportion of Al calculated as AlO, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as BO, f corresponds to a molar proportion of Si calculated as SiO, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as CoO, i corresponds to a molar proportion of Cr calculated as CrO, j corresponds to a molar proportion of Sb calculated as SbO, and k corresponds to a molar proportion of Mn calculated as MnO. 115-. (canceled)16. A ceramic material comprising:ZnO as main constituent;Y as a first additive;second additives comprising at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb;{'sup': '4+', 'Si as a first dopant; and'}{'sup': 3+', '3+', '2+, 'second dopants comprising at least one compound containing a metal cation from Al, B, or Ba,'}{'sub': 2', '3', '2', '3', '2', '3', '2', '3', '2', '3', '4', '2', '3', '2', '3', '3', '4, 'wherein a corresponds to a molar proportion of Bi calculated as BiO, b corresponds to a molar proportion of Y calculated as YO, c corresponds to a molar proportion of Al calculated as AlO, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as BO, f corresponds to a molar proportion of Si calculated as SiO, g corresponds to a molar proportion of Ni calculated ...

A VARISTOR AND PRODUCTION METHOD THEREOF

The present invention relates to a product and fabrication method for a varistor comprising a solid phase of zinc oxide particles substantially uniformly dispersed within a resin media. The varistor of the present invention is synthesised by mixing a substantially homogenous mixture of solid zinc oxide particles and a resin media, and heating the mixture under conditions to melt the resin and suspend the solid zinc oxide particles therein. 130-. (canceled)31. A varistor comprising a solid phase of zinc oxide particles substantially uniformly dispersed within a resin media , wherein the zinc oxide is present in the varistor in a range of 50 vol % to 80 vol % and wherein the ZnO or the varistor has not been sintered.32. The varistor of claim 31 , wherein the zinc oxide particles are substantially free of inorganic oxides other than zinc oxide.33. The varistor of claim 31 , wherein the zinc oxide particles are of a substantially uniform size claim 31 , wherein the size of the zinc oxide particles is in a range of 1 μm to 50 μm.34. The varistor of claim 31 , wherein the resin is a thermoplastic polymer.35. The varistor of claim 44 , wherein the resin is selected from the group consisting of polystyrene claim 44 , polyethylene claim 44 , polypropylene claim 44 , polyacetal claim 44 , polymethyl acrylate claim 44 , polycarbonate claim 44 , polyamide claim 44 , polytetrafluoroethylene claim 44 , tetrafluoroethylene claim 44 , perfluoroalkoxyethylene and any mixture thereof.36. The varistor of claim 31 , wherein the zinc oxide is present in the varistor in a range of 65 vol % to 70 vol %.37. The varistor of claim 31 , further comprising a pair of electrodes in contact with at least one surface of the varistor claim 31 , wherein said at least one surface of the varistor comprises a coating applied thereon.38. The varistor of claim 31 , wherein the varistor is capable of withstanding a surge voltage of at least 5000 V.39. The varistor of claim 31 , wherein the varistor has a ...

TERMINAL CONNECTING STRUCTURE AND ELECTRONIC COMPONENT

A terminal connecting structure is provided with each of the electrodes provided on the element forming the electronic component; and the terminals respectively having the connecting portions arranged along the electrodes respectively. In addition, the terminal connecting structure is provided with clearance forming portions configured to respectively form the respective clearances between the electrodes and the connecting portions respectively; and the connecting materials respectively provided in the clearances, the connecting material being configured to electrically connect the connecting portions and the electrodes respectively. 1. A terminal connecting structure comprising:an electrode provided on an element forming a component;a terminal having a connecting portion arranged along the electrode;a clearance forming portion configured to form a clearance between the electrode and the connecting portion; anda connecting material provided in the clearance, the connecting material being configured to electrically connect the connecting portion and the electrode.2. The terminal connecting structure according to claim 1 , wherein the clearance forming portion includes a projected portion projected from the connecting portion.3. The terminal connecting structure according to claim 2 , wherein the projected portion includes a ridge crossing the terminal.4. The terminal connecting structure according to claim 2 , wherein the projected portion includes a bulged portion formed with a part of the connecting portion claim 2 , the part of the connecting portion being bulged.5. The terminal connecting structure according to claim 4 , wherein the plurality of bulged portions are provided so as to be separated in a crossing direction crossing the terminal.6. The terminal connecting structure according to claim 2 , wherein the projected portion includes a bent portion claim 2 , the bent portion being formed by bending an end portion of the connecting portion in a direction ...

FUNCTIONAL CONTACTOR

A functional contactor is provided. The functional contactor according to one embodiment of the present invention comprises: a conductive elastic portion having elasticity and electrically contacting one of a circuit board of an electronic device, a bracket coupled to the circuit board, and a conductor which can come into contact with the human body; a substrate made from a dielectric material and having a groove in either the upper surface or the lower surface thereof; and a functional element comprising a high dielectric material inserted into the groove and made from sintered ceramic having a higher dielectric constant than a dielectric material, a first electrode disposed on the upper surface of the substrate and electrically connected in series to the conductive elastic portion, and a second electrode disposed on the lower surface of the substrate and opposite to the first electrode. 1. A functional contactor comprising:a conductive elastic portion configured to come into electrical contact with one among a circuit substrate of an electronic device, a bracket coupled to the circuit substrate, and a conductor contactable with a human body and having an elastic force;a substrate made of a dielectric material and having a groove formed in either an upper surface or a lower surface of the substrate; anda functional element inserted into the groove and including a high dielectric material made of sintered ceramic having a dielectric constant that is higher than that of the dielectric material, a first electrode disposed on an upper surface of the substrate and electrically connected to the conductive elastic portion in series, and a second electrode opposite to the first electrode and disposed on a lower surface of the substrate.2. The functional contactor of claim 1 , wherein the high dielectric material is made of a low temperature co-fired ceramic (LTCC) or a varistor material.3. The functional contactor of claim 2 , wherein the varistor material includes a ...

Low temperature fabrication of lateral thin film varistor

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

ZINC OXIDE VARISTOR CERAMICS

Provided according to embodiments of the invention are varistor ceramic formulations that include zinc oxide (ZnO). In particular, varistor ceramic formulations of the invention may include dopants including an alkali metal compound, an alkaline earth compound, an oxide of boron, an oxide of aluminum, or a combination thereof. Varistor ceramic formulations may also include other metal oxides. Also provided according to embodiments of the invention are varistor ceramic materials formed by sintering a varistor ceramic formulation according to an embodiment of the invention. Further provided are varistors formed from such ceramic materials and methods of making such materials. 125.-. (canceled)26. A method of preparing a ceramic material , the method comprising:providing a formulation comprising zinc oxide (ZnO) and at least one minor dopant, wherein the minor dopant comprises an alkali metal compound, an alkaline earth compound, or a combination thereof; andheating the formulation at a temperature in a range of about 1100° C. to about 1200° C. in an atmosphere including oxygen to produce the ceramic material.27. The method of claim 26 , further comprising claim 26 , after heating the formulation claim 26 , cooling the ceramic material to a temperature of about 850° C. at a first cooling rate of at least about 15° C./min.28. The method of claim 26 , further comprising cooling the ceramic material at a second cooling rate of less than about 3° C./min claim 26 , wherein the second cooling rate is applied after the first cooling rate.29. The method of claim 26 , wherein the formulation is homogenized as a slurry.30. The method of claim 26 , further comprising claim 26 , prior to heating the formulation claim 26 , pressing the formulation into a formed object claim 26 , and wherein heating the formulation comprises heating the formed object.31. The method of claim 26 , further comprising metallizing the ceramic material with at least one metal electrode.32. The method of ...

VARISTOR COMPOSITION AND MULTILAYER VARISTOR

A varistor composition free of Sb comprising: (a) ZnO; (b) B—Bi—Zn—Pr glass, or B—Bi—Zn—La glass, or a mixture thereof; (c) a cobalt compound, a chromium compound, a nickel compound, a manganese compound, or mixtures thereof; (d) SnO; and (e) an aluminum compound, a silver compound, or a mixture thereof. By adjusting the ratio between the components, the varistor composition may be made into a multilayer varistor with inner electrodes having a low concentration of noble metals at a sintering temperature less than 1200° C. The multilayer varistor made from the varistor composition has good maximum surge current, good ESD withstand ability, and low fabrication cost. 1. A varistor composition free of Sb comprising:zinc oxide;a first additive selected from the group consisting of: boron-bismuth-zinc-praseodymium glass, boron-bismuth-zinc-lanthanum glass, and a mixture thereof;a second additive selected from the group consisting of: a cobalt compound, a chromium compound, a nickel compound, a manganese compound, and mixtures thereof;a third additive comprising tin dioxide; anda fourth additive selected from the group consisting of: an aluminum compound, a silver compound, and a mixture thereof;wherein based on the total weight of the varistor composition, the total content of the first additive ranges from 0.05 wt % to 20 wt %, the individual content of the second additive ranges from 0.1 wt % to 5.0 wt %, the content of the third additive ranges from 0.1 wt % to 1.5 wt %, and the individual content of the fourth additive ranges from 0.001 wt % to 1.0 wt %.2. The varistor composition free of Sb as claimed in claim 1 , wherein the cobalt compound of the second additive is selected from the group consisting of: a cobalt oxide claim 1 , cobalt hydroxide claim 1 , a percobaltate claim 1 , cobalt carbonate claim 1 , cobalt phosphate claim 1 , and mixtures thereof;the chromium compound of the second additive is selected from the group consisting of: a chromium oxide, a ...

LOW TEMPERATURE FABRICATION OF LATERAL THIN FILM VARISTOR

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process. 1. A method of forming a lateral thin film varistor comprising: forming the first metal oxide layer comprised of a plurality of spaced apart sections of the first metal oxide on a dielectric layer,', 'forming a pair of isolation layer sections, comprised of an insulating material, on the dielectric layer, laterally outside the first metal oxide layer, and', 'forming the second metal oxide layer comprised of a plurality of spaced apart sections of the second metal oxide on the dielectric layer, each of the sections of the second metal oxide layer being located between a pair of the sections of the first metal oxide layer., 'forming a continuous layer comprising alternating regions of a first metal oxide layer and a second metal oxide layer between two laterally spaced electrodes using sputtering process followed by an annealing process, including'}2. The method of claim 1 , wherein the first metal oxide layer comprises zinc oxide.3. The method of claim 1 , further comprising doping the first metal oxide layer with aluminum oxide.4. The method of claim 1 , wherein the second metal oxide layer comprises bismuth oxide.5. The method of claim 1 , further comprising doping the second metal oxide layer with aluminum oxide.6. The method of claim 1 , wherein the annealing process is carried out in an inert gas atmosphere.7. The method of claim 1 , wherein the annealing process comprises heating the continuous layer to a temperature not exceeding a maximum ...

Ceramic Material, Varistor and Methods of Preparing the Ceramic Material and the Varistor

A ceramic material, a varistor and methods for forming a ceramic material and a varistor are disclosed. In an embodiment, a ceramic material includes ZnO as a main component and additives selected from the group consisting of an Al-containing solution, a Ba-containing solution, and at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Sb, Co, Mn, Ni, Y, and Cr. 114-. (canceled)15. A ceramic material comprising:ZnO as a main component; and{'sup': 3+', '2+, 'additives selected from the group consisting of an Al-containing solution, a Ba-containing solution, and at least one compound containing a metal element,'}wherein the metal element is selected from the group consisting of Bi, Sb, Co, Mn, Ni, Y, and Cr.16. The ceramic material according to claim 15 , wherein a content of the additives in the ceramic material is ≤5 mol %.17. The ceramic material according to claim 15 ,{'sub': 1', '3', '4', '3', '4', '2', '3', '2', '2', '3', '2', '3', '1', '2', '3', '2, 'sup': 3+', '2+, 'wherein cis the equivalent content of Co in CoO, m is the equivalent content of Mn in MnO, s is the equivalent content of Sb in SbO, cis the equivalent content of Cr in CrO, a is the content of Al, y is the equivalent content of Y in YO, bis the equivalent content of Bi in BiO, n is the equivalent content of Ni in NiO, bis the content of Ba, and z is the content of ZnO, and'}wherein{'sub': '1', '0.4 mol %≤b≤0.55 mol %,'}1.10 mol %≤s≤1.90 mol %,{'sub': '1', '0.50 mol %≤c≤0.80 mol %,'}0.20 mol %≤m≤0.30 mol %,0.70 mol %≤n≤1.20 mol %,0.25 mol %≤y≤0.45 mol %,{'sub': '2', '0.00 mol %≤c≤0.10 mol %,'}0.003 mol %≤a≤0.006 mol %, and{'sub': '2', '0.005 mol %≤b≤0.015 mol %.'}18. The ceramic material according to claim 17 , wherein (c+5c+2s+4y−m−250a)(1−z)/b=F and 0.27≤F≤0.43.19. The ceramic material according to claim 15 , wherein the at least one compound is selected from the group consisting of metal oxides claim 15 , metal carbonates claim 15 ...

THERMAL METAL OXIDE VARISTOR CIRCUIT PROTECTION DEVICE

Exemplary embodiments of the present invention are directed to a circuit protection device, A circuit protection device may comprise a housing defining a cavity and a metal oxide varistor (MOV) disposed within the cavity. The circuit protection device may further comprise a first terminal electrically attached at a first end to the MOV by solder and extending outside of the housing at a second end. An arc shield is disposed within the housing between the first end of the first terminal and at least partially over the solder. The circuit protection device may further comprise a spring configured to bias the arc shield against a micro switch having an indicator portion disposed at least partially outside of the housing. When a voltage surge condition occurs, the MOV changes from a non-conductive state to a conductive state and current flows between the first terminal and a second terminal where the heat generated by the current flowing through the varistor melts the solder and the first end of the first terminal electrically separates from the varistor. 1. A circuit protection device comprising:a housing defining a cavity;a metal oxide varistor disposed within said cavity and including a protrusion extending from a surface of said metal oxide varistor;a terminal electrically attached at a first end to said protrusion by solder and a second end extending outside of said housing, said terminal forming a spring biased away from said protrusion;a micro switch having an indicator portion disposed at least partially outside of said housing, a portion of said terminal forcing a trigger portion of said micro switch in a first position corresponding to a normal operating condition of said circuit protection device.2. The circuit protection device of wherein upon the occurrence of a fault condition claim 1 , current through said metal oxide varistor heats said solder sufficiently to release said first end of said terminal away from said protrusion causing said portion of said ...

VARISTOR

A varistor includes a varistor body, a first terminal disposed on one side of the varistor body, a second terminal disposed on the other side of the varistor body, a first electrode disposed on an upper portion of the varistor body, electrically connected to the first terminal, and extending towards the other side of the varistor body, and a second electrode disposed on a lower portion of the varistor body, electrically connected to the second terminal, and extending towards the one side of the varistor body. 1. A varistor , comprising:a varistor body;a first terminal disposed on one side of the varistor body;a second terminal disposed on the other side of the varistor body;a first electrode disposed on an upper portion of the varistor body, electrically connected to the first terminal, and extending towards the other side of the varistor body; anda second electrode disposed on a lower portion of the varistor body, electrically connected to the second terminal, and extending towards the one side of the varistor body.2. The varistor of claim 1 ,wherein the varistor body comprises ZnO, andwherein an internal space of the varistor body is filled with a non-conductive material or a semiconductor material and does not include an internal electrode disposed in the internal space.3. The varistor of claim 1 , further comprising:a first insulating layer disposed on upper portions of the varistor body and the first electrode; anda second insulating layer disposed on lower portions of the varistor body and the second electrode.4. The varistor of claim 3 , further comprising:a third insulating layer disposed on an upper portion of the first insulating layer and being harder than the first insulating layer; anda fourth insulating layer disposed on a lower portion of the second insulating layer and being harder than the second insulating layer.5. The varistor of claim 3 , further comprising:a third insulating layer disposed on an upper portion of the first insulating layer and ...

LAMINATED VARISTOR

A laminated varistor includes a varistor layer, a first internal electrode provided on an upper surface of the varistor layer, a second internal electrode provided on a lower surface of the varistor layer and facing the first internal electrode across the varistor layer in upward and downward directions, a first external electrode provided on a first side surface of the varistor layer and electrically connected to the first internal electrode, and a second external electrode provided on a second side surface of the varistor layer and electrically connected to the second internal electrode. The first internal electrode is extended from the first external electrode in a first extension direction. The first internal electrode includes first electrode strips arranged in a first arrangement direction perpendicular to the first extension direction and spaced apart from one another. This laminated varistor has improved surge-resistant characteristics. 1. A laminated varistor comprising:a varistor layer;a first internal electrode provided on an upper surface of the varistor layer;a second internal electrode provided on a lower surface of the varistor layer, the second internal electrode facing the first internal electrode across the varistor layer in upward and downward directions;a first external electrode provided on a first side surface of the varistor layer, the first side surface of the varistor layer being connected to the upper surface and the lower surface of the varistor layer, the external electrode being electrically connected to the first internal electrode; anda second external electrode provided on a second side surface of the varistor layer, the second side surface of the varistor layer being connected to the upper surface and the lower surface of the varistor layer, electrically connected to the second internal electrode, whereinthe first internal electrode is extended from the first external electrode in a first extension direction, andthe first internal ...

Surge protector

The present invention is to provide a surge protector which includes an insulating base having a receiving space and a spare space therein; a dielectric material provided in the receiving space; a first conductive plate enclosed in the insulating base, contacted with one side of the dielectric material and having a first pin formed out of the insulating base; a second conductive plate enclosed in the insulating base and having a first side contacted with the other side of the dielectric material, and a temperature-actuated metal plate enclosed in the insulating base and having a second pin formed out of the insulating base. The temperature-actuated metal plate has a temperature-actuated portion which lies against a second side of the second conductive plate when in a low-temperature state, however, when in a high-temperature state, the temperature-actuated portion curves toward the spare space and thus separates from the second conductive plate.

Varistor Array Including Matched Varistors

A varistor array can include a monolithic body including a plurality of dielectric layers. A first varistor can be formed in the monolithic body. The first varistor can include a first external terminal on a first end of the monolithic body, a first plurality of electrodes connected with the first external terminal, a second external terminal on a second end of the monolithic body, and a second plurality of electrodes connected with the second external terminal. The second plurality of electrodes can be interleaved with the first plurality of electrodes and can overlap the first plurality of electrodes at an overlapping area that is insensitive to a relative misalignment between the first plurality of electrodes and the second plurality of electrodes when the misalignment is less than a threshold. A second varistor can be formed in the monolithic body that is distinct from the first varistor. 1. A varistor array comprising:a monolithic body comprising a plurality of dielectric layers stacked in a Z-direction that is perpendicular to a longitudinal direction, the monolithic body having a first end and a second end that is spaced apart from the first end in the longitudinal direction; a first external terminal at the first end of the monolithic body;', 'a first plurality of electrodes connected with the first external terminal;', 'a second external terminal at the second end of the monolithic body;', 'a second plurality of electrodes connected with the second external terminal of the first varistor, the second plurality of electrodes interleaved with the first plurality of electrodes and overlapping the first plurality of electrodes at an overlapping area that is insensitive to a relative misalignment between the first plurality of electrodes and the second plurality of electrodes when the misalignment is less than a threshold; and, 'a first varistor formed in the monolithic body, the first varistor comprisinga second varistor formed in the monolithic body, the second ...

Varistor and method of manufacturing the same

A varistor includes a substrate; first and second electrodes disposed on an upper side and a lower side of the substrate, respectively; a core varistor body surrounded by the substrate and disposed between the first and second electrodes; first and second terminals having at least portions disposed on one side and the other side of the substrate, respectively, and electrically connected to the first and second electrodes, respectively; and a cover varistor body covering the core varistor body and disposed in a level higher than an upper surface of the substrate or disposed in a level lower than a lower surface of the substrate.

Varistor

A varistor includes a substrate, a varistor body disposed on one surface of the substrate, first and second electrodes disposed on the varistor body and spaced apart from each other, an insulating layer disposed on at least two of the first and second electrodes and the varistor body, and first and second terminals disposed on first and second sides of the substrate opposing each other, electrically connected to the first and second electrodes, respectively, and spaced apart from each other. The substrate has mechanical strength greater than that of the varistor body.

VOLTAGE NONLINEAR RESISTOR

A voltage nonlinear resistor according to the present invention includes a sintered body consisting essentially of zinc oxide and containing bismuth, antimony, and boron as accessory components. The accessory components are bismuth oxide of 1.5 to 2.5 mol %, antimony oxide of 1 to 2 mol %, and boron oxide of 0.3 mol % or less in terms of oxides. 1. A voltage nonlinear resistor comprising:a sintered body consisting essentially of zinc oxide and containing bismuth, antimony, and boron as accessory components, whereinthe accessory components are bismuth oxide of 1.5 to 2.5 mol %, antimony oxide of 1 to 2 mol %, and boron oxide of 0.3 mol % or less in terms of oxides.2. The voltage nonlinear resistor according to claim 1 , wherein: [{'br': None, 'i': N', '/N, 'sub': is', 'd, 'sup': '−5', '≧0.57×10\u2003\u2003Equation (1)'}, {'br': None, 'i': N', '/N, 'sub': is', 'd, 'sup': 2', '7, '≧1.65×10\u2003\u2003Equation (2)'}], 'Equations (1) and (2) are satisfied{'sub': is', 'd, '(in Equations (1) and (2), Nis an interface state density at a grain boundary of the zinc oxide, and Nis a donor density at a grain boundary of the zinc oxide).'}3. The voltage nonlinear resistor according to claim 1 , wherein:{'sub': 1 mA', '10 kA', '10 kA', '1 mA', '1 mA, 115° C.', '1 mA, 30° C.', '1 mA, 115° C.', '1 mA, 30° C., 'when voltage when 1-mA current flows into the voltage nonlinear resistor is V, and when peak voltage when 10-kA impulse current flows into the voltage nonlinear resistor is V, a voltage clamping ratio V/Vis less than 1.6, and when voltage when 1-mA current flows into the voltage nonlinear resistor at 115° C. is V, and when voltage when 1-mA current flows into the voltage nonlinear resistor at 30° C. is V, a temperature characteristic V/Vis 0.95 or more.'}4. The voltage nonlinear resistor according to claim 2 , wherein:{'sub': 1 mA', '10 kA', '10 kA', '1 mA', '1 mA, 115° C.', '1 mA, 30° C.', '1 mA, 115° C.', '1 mA, 30° C., 'when voltage when 1-mA current flows into the voltage ...

ZINC OXIDE VARISTOR

Focusing on zinc oxide itself, which is a main raw material for a zinc oxide varistor (laminated varistor), a predetermined amount of additive is added to a zinc oxide powder having crystallite size of 20 to 100 nm, particle diameter of 20 to 110 nm found using a specific area BET method, untamped density of 0.60 g/cmor greater, and tap density of 0.80 g/cmor greater. This allows a zinc oxide sintered body to secure uniformity, high density, and high electric conductivity, resulting in a zinc oxide varistor with high surge resistance, capable of downsizing and cost reduction. Moreover, addition of aluminum (Al), as a donor element, to the zinc oxide powder allows control of sintered grain size in conformity with the aluminum added amount and baking temperature, and also allows adjustment of varistor voltage, etc. 1. A zinc oxide varistor , comprising zinc oxide (ZnO) as a main component , one or more kinds of additives selected as a grain boundary forming component from a group including bismuth (Bi) and praseodymium (Pr) , and one or more kinds of additives selected as a transition metal element from a group including cobalt (Co) , manganese (Mn) and nickel (Ni);{'sup': 3', '3, 'wherein the zinc oxide has a crystallite size of 20 to 100 nm found by X-ray diffraction, grain diameter of 20 to 110 nm found using a BET method, untamped density of 0.60 g/cmor greater, and tap density of 0.80 g/cmor greater.'}2. The zinc oxide varistor according to claim 1 , wherein an amount of aluminum (Al) 20 ppm to 20000 ppm in molar ratio is added as a donor element to zinc (Zn).3. The zinc oxide varistor according to claim 2 , wherein the aluminum-added zinc oxide claim 2 , which is generated by adding the aluminum (Al) claim 2 , is obtained by heat treating at a temperature of 250° C. or higher claim 2 , a carbonate hydrate generated through precipitate generating reactions in an aluminum salt aqueous solution claim 2 , a zinc salt aqueous solution claim 2 , a carbonate aqueous ...

VARISTOR HAVING MULTILAYER COATING AND FABRICATION METHOD

In one embodiment a varistor may include a ceramic body. The varistor may further comprise a multilayer coating disposed around the ceramic body. The multilayer coating may include an outer layer comprising an epoxy material. The multilayer coating may also include an inner layer that is adjacent the ceramic body and is disposed between the outer layer and the ceramic body. The inner layer may comprise a polymeric material that is composed of an acrylic component. 1. A varistor , comprising:a ceramic body; and an outer layer comprising an epoxy material; and', 'an inner layer being adjacent the ceramic body and disposed between the outer layer and the ceramic body, the inner layer comprising a polymeric material that is composed of an acrylic component., 'a multilayer coating disposed around the ceramic body, the multilayer coating comprising2. The varistor of claim 1 , wherein the ceramic body comprises a ZnO ceramic.3. The varistor of claim 1 , wherein the inner layer comprises a thickness of 3 μm to 100 μm.4. The varistor of claim 1 , wherein the inner layer is derived from an acrylic resin and amino resin.5. The varistor of wherein a ratio of acrylic resin to amino resin is 3:1 to 19:1.6. The varistor of claim 5 , wherein a ratio of acrylic resin to amino resin is 6:1.7. The varistor of claim 1 , wherein a thickness of the outer layer is 0.3 mm to 3 mm.8. The varistor of claim 1 , wherein the outer layer does not contact the ceramic body.9. A method of forming a varistor claim 1 , comprising:providing a ceramic body;applying a first layer on the ceramic body, the first layer comprising an acrylic component; andapplying a second layer to the first layer, the second layer comprising an epoxy material.10. The method of claim 9 , wherein the ceramic body comprises a ZnO ceramic.11. The method of claim 9 , wherein the first layer comprises a thickness of 5 mm to 100 mm.12. The method of claim 9 , wherein the applying the first layer comprises:providing a mixture ...

VARISTOR HAVING MULTILAYER COATING AND FABRICATION METHOD

In one embodiment a varistor may include a ceramic body. The varistor may further comprise a multilayer coating disposed around the ceramic body. The multilayer coating may include a first layer comprising a phenolic material or a silicone material; and a second layer adjacent the first layer, the second layer comprising a high dielectric strength coating. 1. A varistor , comprising:a ceramic body; and a first layer comprising a phenolic material or a silicone material; and', 'a second layer adjacent the first layer, the second layer comprising a high dielectric strength coating., 'a multilayer coating disposed around the ceramic body, the multilayer coating comprising2. The varistor of claim 1 , wherein the ceramic body comprises a ZnO ceramic.3. The varistor of claim 1 , wherein the second layer comprises an alkyd resin.4. The varistor of claim 1 , wherein the first layer comprises a thickness of 300 μm to 1200 μm.5. The varistor of claim 1 , wherein the second layer comprises a thickness of 20 μm to 150 μm.6. The varistor of claim 1 , further comprising an electrical contact layer disposed on the ceramic body claim 1 , wherein the first layer is disposed adjacent the electrical contact layer.7. The varistor of claim 1 , wherein the multilayer coating comprises a dielectric strength of 2500 Vac or greater.8. The varistor of claim 1 , wherein the multilayer coating comprises a thickness of 1.0 mm or less.9. The varistor of claim 1 , wherein the first layer comprises an alkyl silicone resin and a silicon dioxide filler.10. A method of forming a varistor claim 1 , comprising:providing a ceramic body;applying a multilayer coating around the ceramic body, a first layer comprising a phenolic material or a silicone material; and', 'a second layer adjacent the first layer, the second layer comprising a high dielectric strength coating., 'the multilayer coating comprising11. The method of claim 10 , wherein the ceramic body comprises a ZnO ceramic.12. The method of claim ...

Multilayer Component and Process for Producing a Multilayer Component

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment a multilayer component includes a ceramic main element and at least one metal structure, wherein the metal structure is cosintered and wherein main element is a varistor ceramic having ≥90 mol % of ZnO, from 0.5 to 5 mol % of SbO, from 0.05 to 2 mol % of CoO, MnO, SiOand/or CrO, and <0.1 mol % of BO, AlOand/or NiO. 1. A multilayer component comprising:a ceramic main element; and {'sub': 2', '3', '3', '4', '2', '3', '2', '2', '3', '2', '3', '2', '3, 'b': 0', '1, '90 mol % of ZnO, from 0.5 to 5 mol % of SbO, from 0.05 to 2 mol % of CoO, MnO, SiOand/or CrO, and <. mol % of BO, AlOand/or NiO.'}, 'at least one metal structure, wherein the metal structure is cosintered, and wherein main element is a varistor ceramic comprising2. The multilayer component according to claim 1 , wherein the main element is doped with a material of the metal structure such that diffusion of the material from the metal structure into the main element during a sintering operation is reduced.3. The multilayer component according to claim 2 , wherein the main element is doped with from 0.1 to 1 mol per cent of a chemical compound of the material of the metal structure.4. The multilayer component according to claim 2 , wherein dopants comprise silver oxide or silver carbonate.5. The multilayer component according to claim 2 , wherein dopants comprise a palladium compound.6. The multilayer component according to claim 1 , wherein the main element comprises BiO.7. The multilayer component according to wherein the main element is a ceramic sintered with an aid of liquid phases.8. The multilayer component according to claim 1 , wherein the metal structure comprises at least one internal electrode and/or at least one external metallization and/or at least one via.9. The multilayer component according to claim 1 , wherein the metal structure is doped with at least one material of the ceramic main ...

Surge protector with safety mechanism

The present invention is to provide a surge protector with a safety mechanism, which comprises a dielectric element made of a polycrystalline semiconductor ceramic material and having two opposite sides each attached with an electrode; two conductive plates each having a portion adjacent to one end thereof and attached to one of the electrodes via surface contact, an opposite end serving as a pin for electrically connecting with a power supply, and a middle section between the two ends and having a smaller cross-sectional area than other sections thereof; and an insulating enclosure enclosing the dielectric element and the conductive plates in such a way that the middle sections are enclosed and that only the pins are exposed from the insulating enclosure. Thus, when subjected to a large current generating a high temperature exceeding a predetermined threshold value, the middle section melts and breaks to provide a fuse-like safety mechanism.

VARISTOR AND METHOD FOR PRODUCING SAME

A varistor includes an effective layer having first and second surfaces opposite to each other, a first ineffective layer stacked on the first surface of the effective layer, a second ineffective layer stacked on the second surface of the effective layer, and an external electrode. The effective layer includes a ceramic layer having a polycrystalline structure including crystal particles exhibiting voltage nonlinear characteristics, and internal electrodes stacked alternately on the ceramic layer. The thickness of the second ineffective layer is equal to or more than 1.1 times a thickness of the first ineffective layer and equal to or smaller than 6 times the thickness of the first ineffective layer. This varistor has a small size and excellent surge resistance. 1. A varistor comprising: one or more ceramic layers having a polycrystalline structure including a plurality of crystal particles exhibiting voltage nonlinear characteristics, and', 'a plurality of internal electrodes stacked alternately on the one or more ceramic layers;, 'an effective layer having a first surface and a second surface opposite to each other, the effective layer including'}a first ineffective layer stacked on the first surface of the effective layer;a second ineffective layer stacked on the second surface of the effective layer; anda first external electrode and a second external electrode which are electrically connected to the plurality of internal electrodes, whereina thickness of the second ineffective layer is equal to or more than 1.1 times a thickness of the first ineffective layer and equal to or smaller than 6 times the thickness of the first ineffective layer.2. The varistor according to claim 1 , wherein the varistor is configured to be mounted on a mounting surface such that the first ineffective layer faces the mounting surface and the second ineffective layer is positioned opposite to the mounting surface with respect to the first ineffective layer.3. The varistor according to ...

Varistor for High Temperature Applications

The present invention is directed to a varistor comprising a dielectric material comprising a sintered ceramic composed of zinc oxide grains and a grain boundary layer between the zinc oxide grains. The grain boundary layer contains a positive temperature coefficient thermistor material in an amount of less than 10 mol % based on the grain boundary layer. 1. A varistor comprising:a dielectric material comprising a sintered ceramic composed of zinc oxide grains and a grain boundary layer between the zinc oxide grains, wherein the grain boundary layer contains a positive temperature coefficient thermistor material in an amount of less than 10 mol % based on the grain boundary layer.2. The varistor according to claim 1 , wherein the grain boundary layer contains a positive temperature coefficient thermistor material in an amount of 5 mol % or less based on the grain boundary layer.3. The varistor according to claim 1 , wherein the grain boundary layer contains a positive temperature coefficient thermistor material in an amount of from 0.1 mol % to 8 mol % based on the grain boundary layer.4. The varistor according to claim 1 , wherein the grain boundary layer contains a positive temperature coefficient thermistor material in an amount of from 4 mol % to 6 mol % based on the grain boundary layer.5. The varistor according to claim 1 , wherein the positive temperature coefficient thermistor material includes a titanate.6. The varistor according to claim 5 , wherein the titanate includes a barium titanate.7. The varistor according to claim 1 , wherein the positive temperature coefficient thermistor material includes an alkaline earth metal carbonate.8. The varistor according to claim 7 , wherein the alkaline earth metal carbonate includes a calcium carbonate.9. The varistor according to claim 1 , wherein the positive temperature coefficient thermistor material includes a rare earth metal oxide.10. The varistor according to claim 9 , wherein the rare earth metal oxide ...

SINTERED BODY FOR VARISTOR, MULTILAYER SUBSTRATE USING SAME, AND PRODUCTION METHOD FOR THESE

To provide a zinc oxide-based varistor that exhibits adequate characteristics without using antimony. Disclosed is a sintered body for a varistor, including zinc oxide as a main component; 0.6 to 3.0 mol % of bismuth oxide in terms of bismuth (Bi); 0.2 to 1.4 mol % of cobalt oxide in terms of cobalt (Co); 0.1 to 1.5 mol % of chrome oxide in terms of chrome (Cr); and 0.1 to 1.5 mol % of manganese oxide in terms of manganese (Mn), wherein the contents of antimony (Sb), a rare earth element and tin (Sn) are not more than a level of impurities. 1. A sintered body for a varistor , comprising:zinc oxide as a main component;0.6 to 3.0 mol % of bismuth oxide in terms of bismuth (Bi);0.2 to 1.4 mol % of cobalt oxide in terms of cobalt (Co);0.1 to 1.5 mol % of chrome oxide in terms of chrome (Cr); and0.1 to 1.5 mol % of manganese oxide in terms of manganese (Mn), whereinthe contents of antimony (Sb), a rare earth element and tin (Sn) are not more than a level of impurities.2. The sintered body for a varistor according to claim 1 , comprising:0.6 to 3.0 mol % of bismuth oxide in terms of bismuth (Bi);0.2 to 1.4 mol % of cobalt oxide in terms of cobalt (Co);0.1 to 1.5 mol % of chrome oxide in terms of chrome (Cr);0.1 to 1.5 mol % of manganese oxide in terms of manganese (Mn); andthe balance being zinc oxide and inevitable impurities.3. The sintered body for a varistor according to claim 1 , further comprising at least one selected from the group consisting of 0.1 to 2.0 mol % of scandium oxide in terms of scandium (Sc); 0.1 to 2.0 mol % of barium oxide in terms of barium (Ba); and 0.1 to 4.0 mol % of boron oxide in terms of boron (B).4. The sintered body for a varistor according to claim 3 , further comprising at least one selected from the group consisting of 0.1 to 2.0 mol % of scandium oxide in terms of scandium (Sc); 0.1 to 2.0 mol % of barium oxide in terms of barium (Ba); and 0.1 to 2.0 mol % of boron oxide in terms of boron (B).5. The sintered body for a varistor ...

Multilayer Component and Process for Producing Multilayer Component

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced. 115-. (canceled)16. A multilayer component comprising:a ceramic main element being a varistor ceramic; andat least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.17. The multilayer component according to claim 16 , wherein the main element is doped with 0.1 to 1 mol per cent of a chemical compound of the material of the metal structure.18. The multilayer component according to claim 16 , wherein the main element comprises ZnO.19. The multilayer component according to claim 16 , wherein the main element comprises bismuth oxide claim 16 , praseodymium oxide or antimony oxide.20. The multilayer component according to claim 16 , wherein the main element comprises one or more of the materials CoO claim 16 , MnO claim 16 , SiO claim 16 , CrO claim 16 , BO claim 16 , AlOor NiO.21. The multilayer component according to claim 16 , wherein the main element has the composition:≧90 mol % of ZnO,{'sub': 2', '3', '2', '3, 'from 0.5 to 5 mol % of SbOor BiO,'}{'sub': 3', '4', '2', '3', '2', '2', '3, 'from 0.05 to 2 mol % of CoO, MnO, SiOand/or CrO,'}{'sub': 2', '3', '2', '3, '<0.1 mol % of BO, AlOand/or NiO.'}22. The multilayer component according to wherein the main element is a ceramic sintered with an aid of liquid phases.23. The multilayer component according to claim 16 , wherein the ...

Varistor for High Temperature Applications

The present invention is directed to a varistor comprising a dielectric material comprising a sintered ceramic composed of zinc oxide grains and a grain boundary layer between the zinc oxide grains. The grain boundary layer contains a positive temperature coefficient thermistor material in an amount of less than 10 mol % based on the grain boundary layer.

VARISTOR AND MANUFACTURING METHOD THEREOF

A chromaticity of zinc oxide is measured. The durability of a zinc oxide varistor is evaluated based on the chromaticity. This provides a varistor with a high durability stably. 1. A varistor comprising: a plurality of zinc oxide particles; and', 'an oxide layer disposed between the plurality of zinc oxide particles, the oxide layer including at least one of bismuth, praseodymium, and strontium,, 'a sintered body of a nonlinear voltage-dependable resistor composition includingwherein a chromaticity b* of the nonlinear voltage-dependable resistor composition of the sintered body in an L*a*b* colorimetric system satisfies 0 Подробнее

Nano-dispersed powders and methods for their manufacture

Dispersed powders are disclosed that comprise fine nanoscale powders dispersed on coarser carrier powders. The composition of the dispersed fine powders may be oxides, carbides, nitrides, borides, chalcogenides, metals, and alloys. Fine powders discussed are of sizes less than 100 microns, preferably less than 10 micron, more preferably less than 1 micron, and most preferably less than 100 nanometers. Methods for producing such powders in high volume, low-cost, and reproducible quality are also outlined. Such powders are useful in various applications such as catalysts, sensor, electronic, electrical, photonic, thermal, biomedical, piezo, magnetic, catalytic and electrochemical products.

Post-processed nanoscale powders and method for such post-processing

Post-processing methods for nanoparticles are disclosed. Methods for real time quality control of nanoscale powder manufacture are discussed. Uses of post-processed particles and consolidation methods are disclosed. Disclosed methods can enable commercial use of nanoscale powders in wide range of nanotechnology applications.

Inorganic colors and related nanotechnology

A pigment with modified properties because of the powder size being below 100 nanometers. Blue, yellow and brown pigments are illustrated. Nanoscale coated, un-coated, whisker inorganic fillers are included. Stoichiometric and non-stoichiometric composition are disclosed. The pigment nanopowders taught comprise one or more elements from the group actinium, aluminum, antimony, arsenic, barium, beryllium, bismuth, cadmium, calcium, cerium, cesium, cobalt, copper, chalcogenide, dysprosium, erbium, europium, gadolinium, gallium, gold, hafnium, hydrogen, indium, iridium, iron, lanthanum, lithium, magnesium, manganese, mendelevium, mercury, molybdenum, neodymium, neptunium, nickel, niobium, nitrogen, oxygen, osmium, palladium, platinum, potassium, praseodymium, promethium, protactinium, rhenium, rubidium, scandium, silver, sodium, strontium, tantalum, terbium, thallium, thorium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zinc, and zirconium.

Multiple reactant nozzles for a flowing reactor

A collection of zinc oxide nanoparticles have been produced by laser pyrolysis. The zinc oxide nanoparticles have average particle diameters of less than about 95 nm and a very narrow particle size distribution. The laser pyrolysis process is characterized by the production of a reactant stream within the reaction chamber, where the reactant stream includes a zinc precursor and other reactants. The zinc precursor can be delivered as an aerosol.

Post-processed nanoscale powders and method for such post-processing

Post-processing methods for nanoparticles are disclosed. Methods for real time quality control of nanoscale powder manufacture are discussed. Uses of post-processed particles and consolidation methods are disclosed. Disclosed methods can enable commercial use of nanoscale powders in wide range of nanotechnology applications.

An electric insulation arrangement

An electric insulation arrangement comprising a field grading material that comprises: a matrix (8) comprising a dielectric material,a pluralityofmicro varistor particles (9) distributed in said matrix (8); a plurality of bridge particles (10) comprising an electrically conducting material and forming electrically conducting bridges between individual micro varistor particles (9). The bridge particles (10) forma percolating network together with said micro particles but do not form a percolating network by interconnection between themselves.

Field grading members, cables having field grading members, and methods of making field grading members

A field grading composite body includes a polymeric matrix and a particulate filler distributed within the polymeric matrix. Particles of the particulate filler include a core formed from a semiconductor material, an oxide mixed layer deposited on the core, and conducting oxide layer. The conducting oxide layer deposited on the oxide mixed layer to provide an electrical percolation path through the polymeric matrix triggered by strength of an electric field extending through the field composite body. Conductors and methods of making field grading composite bodies for conductors are also described.

Multilayer Varistor and Method for Manufacturing a Multilayer Varistor

In an embodiment a method for manufacturing a multilayer varistor includes providing a first ceramic powder for producing a first ceramic material and at least one second ceramic powder for producing a second ceramic material, wherein the ceramic powders differ from each other in concentration of monovalent elements X by 50 ppm≤Δc(X)≤5000 ppm, wherein X=(Li, Na, K or Ag), and wherein Δc denotes a maximum concentration difference occurring between an active region and a near-surface region of the multilayer varistor, slicking of the ceramic powders and forming of green films, partially printing of a part of the green films with a metal paste to form inner electrodes, stacking printed and unprinted green films, laminating, decarbonizing and sintering the green films and applying outer electrodes. 132.-. (canceled)33. A method for manufacturing a multilayer varistor , the method comprising:{'sup': +', '+', '+', '+', '+', '+', '+, 'providing a first ceramic powder for producing a first ceramic material and at least one second ceramic powder for producing a second ceramic material, wherein the ceramic powders differ from each other in concentration of monovalent elements X by 50 ppm≤Δc(X)≤5000 ppm, wherein X=(Li, Na, K or Ag), and wherein Δc denotes a maximum concentration difference occurring between an active region and a near-surface region of the multilayer varistor;'}slicking of the ceramic powders and forming of green films;partially printing of a part of the green films with a metal paste to form inner electrodes;stacking printed and unprinted green films;laminating, decarbonizing and sintering the green films; andapplying outer electrodes.34. The method according to claim 33 , wherein partially printing comprises partially printing those green films with the metal paste which have a lower concentration of monovalent elements X than remaining green films.35. The method according to claim 33 , wherein the green films are stacked such that the second ceramic ...

Field control tape based on varistor

FIELD: electricity. ^ SUBSTANCE: particles of alloyed ZnO are produced by grinding of sintered ZnO unit, by means of grinding or crushing of calcinated granulated particles, or grinding of calcinated or sintered tape (tape-casting). Versions of realisation, inter alia, are related to hollow microvaristor particles of ZnO produced by granulation method, having lower average density and having diametres in the range of much lower than 90 micrometre; and to compounding of ZnO filler in binders used for tape impregnation. Produced tapes are flexible, preferably self-adhesive and have strong non-linear electric resistance. These tapes are useful for protection of areas with high voltage in electric components. ^ EFFECT: provision of stronger and more reliable non-linear electric resistance, simplified manufacturing of filler from ZnO and mixing with binder. ^ 25 cl РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 404 468 (13) C2 (51) МПК H01B 3/00 (2006.01) H01B 1/20 (2006.01) H01B 17/42 (2006.01) H01B 7/08 (2006.01) H01B 9/02 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (30) Конвенционный приоритет: 21.06.2005 EP 05405395.4 (73) Патентообладатель(и): АББ РИСЕРЧ ЛТД (CH) (43) Дата публикации заявки: 27.07.2009 2 4 0 4 4 6 8 (45) Опубликовано: 20.11.2010 Бюл. № 32 (56) Список документов, цитированных в отчете о поиске: ЕР 1118086 A1, 25.07.2001. RU 2168252 C2, 27.05.2001. RU 97100155 A, 20.01.1999. RU 2128378 C1, 27.03.1999. DE 2233204 C2, 09.06.1982. EP 0992042 A1, 12.04.2000. 2 4 0 4 4 6 8 R U (86) Заявка PCT: CH 2006/000315 (12.06.2006) C 2 C 2 (85) Дата перевода заявки PCT на национальную фазу: 21.01.2008 (87) Публикация PCT: WO 2006/136040 (28.12.2006) Адрес для переписки: 103735, Москва, ул.Ильинка, 5/2, ООО "Союзпатент", пат.пов. Ю.Б.Перегудовой, рег. № 1103 (54) ЛЕНТА УПРАВЛЕНИЯ ПОЛЕМ НА ОСНОВЕ ВАРИСТОРА (57) Реферат: Изобретение относится к ленте с нелинейными электрическими свойствами для ...

Electrical component, component arrangement, and a method for producing an electrical component and component arrangement

본 발명은 캐리어(9) 내에 매립하기 위한 전기 부품(1)에 관한 것이다. 이 부품은 - 세라믹 본체(2), - 상기 본체(2) 상에 제공되는 전기 절연성 패시베이션층(4) 및 - 하나 이상의 내부 전극(3)을 포함한다. 또한, 상기 부품(1)은 상기 내부 전극(3)과 연결되는 외부 전극(5)도 포함하며, 이 경우 상기 외부 전극(5)은 금속을 포함하는 제1 전극층(6) 및 이러한 제1 전극층 위에 배치되고, 구리를 포함하는 제2 전극층(7)을 구비한다. The invention relates to an electrical component 1 for embedding in a carrier 9. This part is -Ceramic body (2), -An electrically insulating passivation layer 4 provided on the body 2 and -It contains one or more internal electrodes (3). In addition, the component 1 also includes an external electrode 5 connected to the internal electrode 3, in which case the external electrode 5 is a first electrode layer 6 containing metal and such a first electrode layer The second electrode layer 7 is disposed thereon and contains copper.

Voltage-dependent nonlinear resistor

Series gap lightning arrester

一种串联间隙避雷器，包括绝缘体和设置在绝缘体内的至少两组串联间隙尖端放电组件，任一组串联间隙尖端放电组件螺旋式环绕所述绝缘体的主轴设置，且任意两组串联间隙尖端放电组件中，从属于其中一组串联间隙尖端放电组件的相邻两个导电体的间隙距离与从属于另一组串联间隙尖端放电组件的相邻两个导电体的间隙距离相等。它可以在兼顾避雷效果的条件下提高串联间隙避雷器的灭弧效果并降低其泄漏电流。

Chip type varistor and ceramic compositions for the same

본 발명은 칩형의 가변 저항기(바리스터)에 관한 것으로, 본 발명의 칩형의 바리스터는 정전용량이 작고, 전압비직선성이 높으며, 전압제어능력과 서지저항이 높다. 이 칩형의 바리스터는 SiC를 주성분으로 하고 Si, Bi, Pb, B, 및 Zn 중에서 선택된 적어도 2종의 원소들을 산화물의 형태로 함유하는 다수개의 세라믹층들; 적층체의 세라믹층들간에 삽입된 내부전극층; 및 적층체의 표면에 형성되고 내부전극층에 전기적으로 접속된 외부전극에 의해 형성된 적층체이다.

Materials and products using nanostructured non-stoichiometric substances

Nanoscale non-stoichiometric materials with unusual properties are disclosed. These materials offer a wide range of novel formulations for applications in catalysis, chemicals and fuels, electronics, electromagnetics, photonics, optics, sensors, electrochemical products, structural products, biomedical engineering, acoustics, composites, and other applications. Illustrative methods and processes are disclosed to highlight catalytic properties and electrical properties and to process these materials from powder or porous forms into dense forms and shapes. The invention includes a non-stoichiometric composition of a material, preferably in nanostructured form, for various applications including, but not limited to, methods to reduce the sintering temperature, the sintering time, or both.

Zinc oxide particles

经激光热解(300)生产的氧化锌纳米颗粒的收集。氧化锌纳米颗粒具有的平均粒径小于约95纳米并具有极窄的颗粒大小分布。激光热解法的特点是在反应室内产生反应剂料流，所述的反应剂料流包括锌前体和其它反应剂。锌前体是以气溶胶的形式输送的。

Crystallized glass compositions for coating oxide-based ceramics

The present invention relates to a zinc oxide varistor as a characteristic element of an arrestor for protecting a transmission and distribution line and peripheral devices thereof from surge voltage created by lightning, and more particularly a highly reliable zinc oxide varistor excellent in the non-linearity with respect to voltage, the discharge withstand current rating properties, and the life characteristics under voltage, a method of preparing the same, and PbO type crystallized glass for coating oxide ceramics employed for a zinc oxide varistor, etc. A zinc oxide varistor of the present invention comprises a sintered body (1) and a high resistive side layer (3) consisting of crystallized glass with high crystallinity containing the prescribed amount of SiO 2 , MoO 3 , WO 3 , TiO 2 , NiO, etc., formed on the sides of the sintered body (1) to enhance the strength and the insulating property thereof, thereby improving the non-linearity with respect to voltage, the discharge withstand current rating properties and the life characteristics under voltage. The crystallized glass composition for coating of the present invention comprises PbO as a main component and additives such as ZnO, B 2 O 3 , SiO 2 , MoO 3 , WO 3 , TiO 2 , and NiO to enhance the crystallinity and the insulating property thereof.

Method of coating for device of ZnO

The present invention relates to a coating method for enhancing side insulation performance of a ZnO device. According to the present invention, an insulating material is coated so that an outer layer which has wave forms and is thin is coated when a side of a ZnO device applied to an arrester is coated. The side of the outer layer which has wave forms and is thin is coated to prevent a peeling phenomenon with the ZnO device, wherein a coating thickness is thin and adhesion is strengthened, and further, secure a thermal shock prevention function. Moreover, a flashover distance is increased to significantly improve electrical safety.

METAL OXYD VARISTOR

ZnO Method of coating for device of ZnO

Voltage nonlinearity resistance and manufacture method thereof

1. 청구범위에 기재된 발명이 속하는 기술분야 1. TECHNICAL FIELD OF THE INVENTION 본 발명은 피뢰기에 내장되는 저항소자에 관한 것이다. The present invention relates to a resistance element embedded in an arrester. 2. 발명이 해결하고자 하는 기술적과제 2. The technical problem to be solved by the invention 본 발명의 전압비직선 저항체는 온도 및 서어지전류에 대하여 높은 안정성을 갖고 속류 및 번개서어지 등에 대하여 응답특성을 향상시키는데 그 목적이 있다. The voltage nonlinear resistor of the present invention has a high stability against temperature and surge current, and an object thereof is to improve response characteristics against rapid current and lightning surge. 3. 발명의 해결방법의 요지 3. Summary of Solution to Invention 본 발명은 산화아연을 주성분으로 하고 첨가물로서 비스무스산화물 0.1-5.0 mol%, 산화안티몬 0.1-5.0 mol%, 산화크롬 0.1-3.0 mol%, 탄산망간 0.1-5.0 mol%, 산화니켈 0.1-3.0 mol%, 산화코발트 0.1-5.0 mol%, 산화네오디움 0.001-3.0 mol%, 산화규소 0.1-3.0 mol%, 산화알루미늄 0.0001-0.01 mol%를 첨가하여서 되는 조성물을 소결하여 저항체로 사용함으로서 상기의 목적을 달성할 수 있다. The present invention is based on zinc oxide, the additive as bismuth oxide 0.1-5.0 mol%, antimony oxide 0.1-5.0 mol%, chromium oxide 0.1-3.0 mol%, manganese carbonate 0.1-5.0 mol%, nickel oxide 0.1-3.0 mol% The above object is achieved by sintering a composition obtained by adding 0.1-5.0 mol% of cobalt oxide, 0.001-3.0 mol% of neodymium oxide, 0.1-3.0 mol% of silicon oxide, and 0.0001-0.01 mol% of aluminum oxide to use as a resistor. can do. 4. 발명의 중요한 용도 4. Important uses of the invention 본 발명의 조성으로 이루어진 저항소자는 피뢰기, 피뢰기겸용 라인포스터 등에 내장되어 과전압을 방지한다. The resistive element made of the composition of the present invention is incorporated in a lightning arrester, a lightning arrester combined line poster, etc. to prevent overvoltage.

Manufacturing Methods of ZnO Varistors With High Surge Energy Capability

본 발명은 높은 서지에너지 내량을 갖는 ZnO 바리스터의 제조 방법을 제공한다. 본 발명은 산화 비스무스 분말, 산화 안티몬 분말, 철족 산화물 분말, 망간 산화물 및 알루미나 분말로 이루어지는 첨가제를 배합하는 단계; 상기 배합된 첨가제를 1차 분쇄하는 단계; 상기 분쇄된 첨가제에 산화 아연 분말을 혼합하여 바리스터 원료 조성물을 배합하는 단계; 상기 원료 조성물을 2차 분쇄하는 단계; 상기 원료 조성물을 성형하는 단계; 및 상기 성형된 성형체를 소결하는 단계를 포함하는 대용량 산화 아연 바리스터의 제조 방법을 제공한다. 본 발명에 따르면, 직격뢰 또는 고출력전자기펄스(HPEMP; High Power Electro-Magnetic Pulse)와 같은 높은 서지에너지 내량을 갖고 신뢰성 있는 산화아연 바리스터의 제조가 가능하게 된다. The present invention provides a method of manufacturing a ZnO varistor having a high surge energy tolerance. The present invention relates to a method for producing a composite oxide, comprising: blending an additive comprising bismuth oxide powder, antimony oxide powder, iron oxide powder, manganese oxide and alumina powder; Firstly pulverizing the blended additives; Mixing the powdered additive with zinc oxide powder to form a varistor raw material composition; Secondarily pulverizing the raw material composition; Molding the raw material composition; And sintering the molded body. The present invention also provides a method for producing a large-capacity zinc oxide varistor. According to the present invention, it is possible to manufacture a reliable zinc oxide varistor having a high surge energy capacity such as a direct-current lightning or high power electro-magnetic pulse (HPEMP).

Multilayer chip varistor

적층형 칩 배리스터(varistor)는 복수의 배리스터부가 소정의 방향을 따라 배치되어 있는 적층체, 및 복수의 단자전극을 구비한다. 각 배리스터부는 전압 비직선 특성을 발현하는 배리스터층, 및 배리스터층을 사이에 두도록 배치되는 복수의 내부전극을 갖는다. 각 단자전극은 적층체의 외표면 중 소정의 방향에 평행한 제 1 외표면에 배치되는 동시에, 복수의 내부전극 중 대응하는 내부전극에 각각 전기적으로 접속된다. 복수의 내부전극은 복수의 내부전극 중 서로 이웃하는 내부전극끼리에 있어서 서로 겹치는 제 1 전극부분과, 제 1 전극부분으로부터 제 1 외표면에 노출되도록 인출된 제 2 전극부분을 포함하고 있다. 복수의 단자전극은 대응하는 내부전극에 제 2 전극부분을 통해서 전기적으로 접속된다. The stacked chip varistor includes a laminate in which a plurality of varistor portions are arranged along a predetermined direction, and a plurality of terminal electrodes. Each varistor portion has a varistor layer that exhibits voltage nonlinearity characteristics, and a plurality of internal electrodes arranged to sandwich the varistor layer therebetween. Each terminal electrode is disposed on a first outer surface parallel to a predetermined direction of the outer surface of the laminate, and is electrically connected to a corresponding inner electrode of the plurality of inner electrodes, respectively. The plurality of inner electrodes include a first electrode portion overlapping each other among neighboring inner electrodes among the plurality of inner electrodes, and a second electrode portion drawn out from the first electrode portion to be exposed to the first outer surface. The plurality of terminal electrodes are electrically connected to the corresponding internal electrodes through the second electrode portions. 적층형 칩 배리스터, 배리스터 소체, 외부전극, 내부전극, 단자전극 Multilayer Chip Varistor, Varistor Element, External Electrode, Internal Electrode, Terminal Electrode

COATING MATERIAL WITH NONLINEAR RESISTANCE, TIRE AND STATOR WINDING

РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2015 134 535 A (51) МПК C09D 133/00 (2006.01) C09D 163/00 (2006.01) C09D 175/04 (2006.01) C09D 7/12 (2006.01) H01B 3/40 (2006.01) H01B 7/12 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА H01B 1/00 (2006.01) ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ H01B 1/20 (2006.01) H01C 7/10 (2006.01) (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2015134535, 17.01.2014 (71) Заявитель(и): КАБУСИКИ КАЙСЯ ТОСИБА (JP) Приоритет(ы): (30) Конвенционный приоритет: (43) Дата публикации заявки: 27.02.2017 Бюл. № 06 (86) Заявка PCT: JP 2014/000213 (17.01.2014) (87) Публикация заявки PCT: R U Адрес для переписки: 129090, Москва, ул. Б. Спасская, 25, стр. 3, ООО "Юридическая фирма Городисский и Партнеры" (54) МАТЕРИАЛ ПОКРЫТИЯ С НЕЛИНЕЙНЫМ СОПРОТИВЛЕНИЕМ, ШИНА И ОБМОТКА СТАТОРА (57) Формула изобретения 1. Материал покрытия с нелинейным сопротивлением, содержащий: полимерную матрицу, изготовленную из эпоксидной смолы, которую отверждают за счет добавления к смоле отвердителя; частицы, содержащиеся в диспергированном состоянии в полимерной матрице и изготовленные из спеченного материала, содержащего оксид цинка в качестве основного компонента; и полупроводящие вискеры, содержащиеся в диспергированном состоянии в полимерной матрице и изготовленные из оксида цинка, подвергнутого обработке титанатным аппретом с целью модификации поверхности. 2. Материал покрытия с нелинейным сопротивлением, содержащий: полимерную матрицу, изготовленную из акриловой смолы, эпоксидной смолы или полиуретана, которые отверждают за счет нагрева; частицы, содержащиеся в диспергированном состоянии в полимерной матрице и изготовленные из спеченного материала, содержащего оксид цинка в качестве основного компонента; и полупроводящие вискеры, содержащиеся в диспергированном состоянии в полимерной матрице и изготовленные из оксида цинка, подвергнутого обработке Стр.: 1 A 2 0 1 5 1 3 4 5 3 5 A WO 2014/112384 (24.07.2014) 2 0 1 5 1 3 4 5 3 5 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 18.08.2015 ...

Patent JPS50131095A

Chip varistor

Voltage limiting composition and method of fabricating the same

A voltage limiting composition, actually a nonlinear resistor, especially suitable for use in a gapless surge arrester is disclosed herein. This composition includes a predetermined amount of zinc oxide as its primary ingredient and one or more specifically selected additives. All of these constituents are combined and sintered so that the composition displays a nonlinear exponent alpha at least equal to about 35 over the current range of 1 ma to 5000 amps and such that its energy absorption capability is at least equal to about 50 joules/cm3.

Lightning arrester

본 고안의 목적은 가공선에 전력계통의 내부에서 발생하는 이상전압 및 뇌방전에 의한 이상전압으로 부터 계통에 설치된 전력기기들을 보호하기 위한 것으로, 방수 및 기밀유지가 용이하며, 절연 내압 특성을 향상시킬 수 있을 뿐만 아니라, 제조가 용이하고, 시공 설치가 간편하여, 제조코스트를 절감시킬 수 있는 피뢰기를 제공하는데 있다. The purpose of the present invention is to protect the power equipment installed in the system from the abnormal voltage generated from the inside of the power system and the abnormal voltage caused by the lightning discharge on the overhead line. In addition, it is possible to provide a lightning arrester that can be easily manufactured, easy to install, and can reduce manufacturing cost. 피뢰기 lightning arrester

Materials for varistor and manufacturing method thereof

내용없음

Varistor

배리스터는 전압 비직선 특성을 발현하는 자기 조성물과, 자기 조성물의 적어도 일부를 끼우도록 배치된 적어도 두개의 전극을 구비하고 있다. 자기 조성물은, 산화아연을 주성분으로서 포함하는 제1 상과, Ca와 Si의 산화물로 이루어진 제2 상이 혼재하여 이루어진 혼상을 포함하고 있다. The varistor has a magnetic composition that exhibits voltage nonlinearity characteristics and at least two electrodes arranged to sandwich at least a portion of the magnetic composition. The magnetic composition includes a mixed phase in which a first phase containing zinc oxide as a main component and a second phase composed of an oxide of Ca and Si are mixed. 배리스터, 전압 비직선 특성, 자기 조성물, 산화아연, 혼상 Varistor, voltage nonlinearity, magnetic composition, zinc oxide, mixed phase

Voltage nonlinear resistor and manufacturing method thereof

1. 청구범위에 기재된 발명이 속한 기술분야 본 발명은 피뢰기에 내장되는 저항소자에 관한 것이다. 2. 발명이 해결하고자 하는 기술적 과제 본 발명의 전압비직선 저항체는 온도 및 서어지전류에 대하여 높은 안정성을 갖고 속류 및 번개서어지등에 대하여 응답특성을 향상시키는데 그 목적이 있다. 3. 발명의 해결방법의 요지 본 발명은 산화아연을 주성분으로 하고 첨가물로서 비스무스산화물 0.1∼5.0㏖%, 산화안티몬 0.1∼5.0㏖%, 산화크롬 0.1∼3.0㏖%, 탄산망간 0.1∼5.0㏖%, 산화니켈 0.1∼3.0㏖%, 산화코발트 0.1∼5.0㏖%, 산화네오디움 0.001∼3.0㏖%, 산화규소 0.1∼3.0㏖%, 산화알루미늄 0.0001∼0.01㏖%를 첨가하여서 되는 조성물을 소결하여 저항체로 사용함으로서 상기의 목적을 달성할 수 있다. 4. 발명의 중요한 용도 본 발명의 조성으로 이루어진 저항소자는 피뢰기, 피뢰기겸용 라인포스터등에 내장되어 과전압을 방지한다.

Surge Protector for Signal Railroad

본 고안은 통신선로용 서지보호기에 관한 것으로서, 한 쌍의 접속단자와 한 개의 접지단자를 구비하고 상기 한 쌍의 접속 단자가 통신선로에 연결되어 정보신호는 통과시키고 서지성 전압 또는 이상/과전류를 제거하기 위한 어레스터와, 상기 어레스터의 한 쌍의 접속단자와 통신선로 사이에 게재되어 서지성 전압 또는 전류를 제거하는 바리스터를 포함하여 구성된 것을 특징으로 한다. The present invention relates to a surge protector for a communication line, comprising a pair of connection terminals and a ground terminal, and the pair of connection terminals are connected to the communication line to pass information signals and to prevent surge voltages or abnormal / overcurrents. An arrester for removing and a varistor placed between the pair of connection terminals and the communication line of the arrester to remove the surge voltage or current is characterized in that it comprises a. 본 고안에 의하면, 서지보호기 내의 반응 속도와 서지 에너지 내량을 높임으로써 통신선로를 통해 유입되는 서지성 전압 또는 이상/과전류를 완전히 차단하여 후단의 통신기기를 보다 안전하게 보호할 수 있다. According to the present invention, by increasing the reaction speed and the surge energy content in the surge protector, it is possible to completely block the surge voltage or the abnormal / overcurrent flowing through the communication line to more securely protect the communication device of the next stage. 서지보호기, 어레스터, 바리스터, 통신선로 Surge Protectors, Arrestors, Varistors, Communication Lines

Nano-dispersed powders and methods for their manufacture

Dispersed powders are disclosed that comprise fine nanoscale powders dispersed on coarser carrier powders. The composition of the dispersed fine powders may be oxides, carbides, nitrides, borides, chalcogenides, metals, and alloys. Fine powders discussed are of sizes less than 100 microns, preferably less than 10 micron, more preferably less than 1 micron, and most preferably less than 100 nanometers. Methods for producing such powders in high volume, low-cost, and reproducible quality are also outlined. Such powders are useful in various applications such as catalysts, sensor, electronic, electrical, photonic, thermal, biomedical, piezo, magnetic, catalytic and electrochemical products.

Nano-dispersed powders and methods for their manufacture

Dispersed powders are disclosed that comprise fine nanoscale powders (200) dispersed on coarser carrier powders (102). The composition of the dispersed fine powders may be oxides, carbides, nitrides, borides, chalcogenides, metals, and alloys. Fine powders discussed are of sizes less than 100 microns, preferably less than 10 micron, more preferably less than 1 micron, and most preferably less than 100 nanometers. Methods for producing such powders in high volume, low-cost, and reproducible quality are also outlined. Such powders are useful in various applications such as catalysis, sensor, electronic, electrical, photonic, thermal, biomedical, piezo, magnetic, catalytic and electrochemical products.

Nano-engineered phosphors and related nanotechnology

Dispersed phosphor powders are disclosed that comprise nanoscale powders dispersed on coarser carrier powders. The composition of the dispersed fine powders may be oxides, carbides, nitrides, borides, chalcogenides, metals, and alloys. Such powders are useful in various applications such as lamps, cathode ray tubes, field emission displays, plasma display panels, scintillators, X-ray detectors, IR detectors, UV detectors and laser detectors. Nano-dispersed phosphor powders can also be used in printing inks, or dispersed in plastics to prevent forgery and counterfeiting of currency, original works of art, passports, credit cards, bank checks, and other documents or products.

High volume manufacturing of nanoparticles and nano-dispersed particles at low cost

A method for economically producing nanoscale powders in general and nano-dispersed powders in particular at high throughputs. The composition of the powders produced may be oxides, carbides, nitrides, borides, chalcogenides, metals, and alloys.

Nanotechnology for inks and dopants

Novel inks and dopant materials and their applications are discussed. More specifically, the specifications teach the use of nanotechnology and nanostructured materials for developing novel ink and dopant-based products.

Conductive nanocomposite films

Methods for preparing low resistivity nanocomposite layers that simultaneously offer optical clarity, wear resistance and superior functional performance. Nanofillers and a substance having a polymer are mixed. Both low-loaded and highly-loaded nanocomposites are included. Nanoscale coated and un-coated fillers may be used. Nanocomposite films may be coated on substrates.

Nanostructured ion conducting solid electrolytes

Ion conducting solid electrolytes are constructed from nanoscale precursor material. Nanocrystalline powders are pressed into disc structures and sintered to the appropriate degree of densification. Metallic material is mixed with 0 to 65 vol % nanostructured electrolyte powders to form a cermet mix and then coated on each side of the disc and fitted with electrical leads. The electrical conductivity of a Ag/YSZ/Ag cell so assembled exhibited about an order of magnitude enhancement in oxygen ion conductivity. As an oxygen-sensing element in a standard O 2 /Ag/YSZ/Ag/N 2 set up, the nanocrystalline YSZ element exhibited commercially significant oxygen ion conductivity at low temperatures. The invention can be utilized to prepare nanostructured ion conducting solid electrolytes for a wide range of applications, including sensors, oxygen pumps, fuel cells, batteries, electrosynthesis reactors and catalytic membranes.

Polymer nanocomposite implants with enhanced transparency and mechanical properties for administration within humans or animals

Polymer nanocomposite implants with nanofillers and additives are described. The nanofillers described can be any composition with the preferred composition being those composing barium, bismuth, cerium, dysprosium, europium, gadolinium, hafnium, indium, lanthanum, neodymium, niobium, praseodymium, strontium, tantalum, tin, tungsten, ytterbium, yttrium, zinc, and zirconium. The additives can be of any composition with the preferred form being inorganic nanopowders comprising aluminum, calcium, gallium, iron, lithium, magnesium, silicon, sodium, strontium, titanium. Such nanocomposites are particularly useful as materials for biological use in applications such as drug delivery, biomed devices, bone or dental implants.

Thermal nanocomposites

Methods for preparing nanocomposites with thermal properties modified by powder size below 100 nanometers. Both low-loaded and highly-loaded nanocomposites are included. Nanoscale coated, un-coated, whisker type fillers are taught. Thermal nanocomposite layers may be prepared on substrates.

Nano-engineered phosphors and related nanotechnology

Dispersed phosphor powders are disclosed that comprise nanoscale powders dispersed on coarser carrier powders. The composition of the dispersed fine powders may be oxides, carbides, nitrides, borides, chalcogenides, metals, and alloys. Such powders are useful in various applications such as lamps, cathode ray tubes, field emission displays, plasma display panels, scintillators, X-ray detectors, IR detectors, UV detectors and laser detectors. Nano-dispersed phosphor powders can also be used in printing inks, or dispersed in plastics to prevent forgery and counterfeiting of currency, original works of art, passports, credit cards, bank checks, and other documents or products.

Nano-dispersed powders and methods for their manufacture

Dispersed powders are disclosed that comprise fine nanoscale powders (200) dispersed on coarser carrier powders (102). The composition of the dispersed fine powders may be oxides, carbides, nitrides, borides, chalcogenides, metals, and alloys. Fine powders discussed are of sizes less than 100 microns, preferably less than 10 micron, more preferably less than 1 micron, and most preferably less than 100 nanometers. Methods for producing such powders in high volume, low-cost, and reproducible quality are also outlined. Such powders are useful in various applications such as catalysis, sensor, electronic, electrical, photonic, thermal, biomedical, piezo, magnetic, catalytic and electrochemical products.

Shape engineering of nanoparticles

Methods for preparing high aspect ratio nanomaterials from spherical nanomaterials useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Inorganic dopants, inks and related nanotechnology

Ink compositions with modified properties result from using a powder size below 100 nanometers. Colored inks are illustrated. Nanoscale coated, uncoated, whisker inorganic fillers are included. The pigment nanopowders taught comprise one or more elements from the group actinium, aluminum, antimony, arsenic, barium, beryllium, bismuth, cadmium, calcium, cerium, cesium, chalcogenide, cobalt, copper, dysprosium, erbium, europium, gadolinium, gallium, gold, hafnium, hydrogen, indium, iridium, iron, lanthanum, lithium, magnesium, manganese, mendelevium, mercury, molybdenum, neodymium, neptunium, nickel, niobium, nitrogen, oxygen, osmium, palladium, platinum, potassium, praseodymium, promethium, protactinium, rhenium, rubidium, scandium, silver, sodium, strontium, tantalum, terbium, thallium, thorium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zinc, and zirconium.

Shape engineering of nanoparticles

Methods for preparing high aspect ratio nanomaterials from spherical nanomaterials useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Method of forming non-stoichiometric nanoscale powder comprising temperature-processing of a stoichiometric metal compound.

Nanotechnology methods for creating stoichiometric and non-stoichiometric substances with unusual combination of properties by lattice level composition engineering are described. The modified properties described include electrical conductivity, dielectric constant, dielectric strength, dielectric loss, polarization, permittivity, critical current, superconductivity, piezoelectricity, mean free path, curie temperature, critical magnetic field, permeability, coercive force, magnetostriction, magnetoresistance, hall coefficient, BHmax, critical temperature, melting point, boiling point, sublimation point, phase transformation condition, vapor pressure, anisotropy, adhesion, density, hardness, ductility, elasticity, porosity, strength, toughness, surface roughness, coefficient of thermal expansion, thermal conductivity, specific heat, latent heat, refractive index, absorptivity, emissivity, dispersivity, scattering, polarization, acidity, basicity, catalysis, reactivity, energy density, activation energy, free energy, entropy, frequency factor, bioactivity, biocompatibility, thermal coefficient of any property and pressure coefficient of any property.

Surface engineering of nanoparticles

Methods for modifying the surface characteristics of nanomaterials. These methods are useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Methods for modifying the surface area of nanomaterials

Methods for changing the surface area of nanomaterials to improve properties, processing and product manufacturing. These methods are useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Slurry processing of nanoscale materials into nanotechnology products

Methods for slurry processing of nanomaterials into products. These methods are useful for organic, inorganic, metallic, alloy, ceramic, conducting polymer, non-conducting polymer, ion conducting, non-metallic, ceramic-ceramic composite, ceramic-polymer composite, ceramic-metal composite, metal-polymer composite, polymer-polymer composite, metal-metal composite, processed materials including paper and fibers, and natural materials such as mica, dielectrics, ferrites, stoichiometric, non-stoichiometric, or a combination of one or more of these. These methods also allow the fabrication of a functionally graded products.

Shape engineering of nanoparticles

Methods for preparing high aspect ratio nanomaterials from spherical nanomaterials useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Surface functionalization of nanomaterials for improved processing into devices and products

Methods for functionalizing the surface of nanomaterials to improve processing and product manufacturing. These methods are useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Shape engineering of nanoparticles

Methods for preparing high aspect ratio nanomaterials from spherical nanomaterials useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Nanocrystalline-based varistors produced by intense mechanical milling

L'invention concerne de nouvelles varistances à base d'oxyde de zinc ainsi qu'une méthode de fabrication de celle-ci, dans laquelle on utilise comme produits de départ des poudres nanocristallines obtenues par broyage mécanique intense et on fait subir au mélange obtenu à partir de ces poudres nanocristalli nes un traitement de consolidation tel qu'un frittage, dans des conditions de tempér ature et de temps adéquatement choisies de façon à conserver la plus petite taille pos sible de grains de ZnO. Les varistances ainsi obtenues on une microstructure très fine , homogène et une taille moyenne des grains typiquement inférieure ou égale à 2 .m u.m, ce qui est cinq fois plus petit que la taille de grains des matériaux convention nels. Ces nouvelles varistances ont un plus grand nombre de joints de grain par unité de longueur et donc une tension de claquage beaucoup plus élevée. Cette tension typiquement supérieure à 10 kV/cm et peut atteindre 17 kV/cm ce qui est presqu'u n ordre de grandeur au dessus de la tension de claquage des varistances conventionnelles. Le coefficient de non-linéarité de la courbe de courant-tensio n est aussi amélioré. Il est supérieur à 20 et peut atteindre des valeurs aussi élevée s que 60. En outre, les courants de fuite en dessous de la tension de claquage des varistances ainsi produites, ont plus faibles. The invention relates to new varistors based on zinc oxide and to a method of manufacturing the same, in which nanocrystalline powders obtained by intense mechanical grinding are used as starting materials and the mixture obtained is subjected to starting from these nanocrystalline powders, a consolidation treatment such as sintering, under conditions of temperature and time suitably chosen so as to keep the smallest possible size of ZnO grains. The varistors thus obtained have a very fine, homogeneous microstructure and an average grain size typically less than or equal to 2 .mu.m, which is five times smaller than the ...

Surface functionalization of nanomaterials for improved processing into devices and products

Methods for functionalizing the surface of nanomaterials to improve processing and product manufacturing. These methods are useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Methods for modifying the surface area of nanomaterials

Methods for changing the surface area of nanomaterials to improve properties, processing and product manufacturing. These methods are useful for oxides, nitrides, carbides, borides, metals, alloys, chalcogenides, and other compositions.

Products comprising nano-precision engineered electronic components

Electronic devices prepared from nanoscale powders are described. Methods for utilizing nanoscale powders and related nanotechnology to prepare capacitors, inductors, resistors, thermistors, varistors, filters, arrays, interconnects, optical components, batteries, fuel cells, sensors and other products are discussed.

Color pigment nanotechnology

A pigment prepared using nanofillers with modified properties because of the powder size being below 100 nanometers. Blue, yellow and brown pigments are illustrated. Nanoscale coated, un-coated, nanorods type fillers are included. The pigment nanopowders taught comprise one or more elements from the group actinium, antimony, aluminum, arsenic, barium, beryllium, bismuth, cadmium, calcium, cerium, cesium, cobalt, copper, dysprosium, erbium, europium, gadolinium, gallium, gold, hafnium, hydrogen, indium, iridium, iron, lanthanum, lithium, magnesium, manganese, mendelevium, mercury, molybdenum, neodymium, neptunium, nickel, niobium, nitrogen, oxygen, osmium, palladium, platinum, potassium, praseodymium, promethium, protactinium, rhenium, rubidium, scandium, silver, sodium, strontium, sulfur, selenium, tantalum, terbium, thallium, thorium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zinc, and zirconium.

Integrated box-packed FDMOV composite assembly with air discharge structure

本发明提供一种具有空气放电结构的一体化盒装FDMOV复合组件，包括盒体、螺钉和FDMOV组件组成，所述FDMOV组件安装在所述盒体内，并通过螺钉固定在一起，所述FDMOV组件由绝缘固定板、上放电电极、绝缘环片、下放电电极、MOV芯片和引出电极片中的至少一种组件组成，本发明提供一种具有空气放电结构的一体化盒装FDMOV复合组件简单快捷、适合机械化，成本低廉、具有极大的经济使用价值。

A kind of Zinc-oxide piezoresistor and porcelain powder with positive temperature coefficient

本发明涉及电阻领域，尤其涉及一种具有正温度系数的氧化锌压敏电阻以及瓷粉。配方是一种宽梯度范围（150~320V/mm）的氧化锌压敏电阻专用瓷粉配方，组份及含量包括ZnO 88~98mol%、Bi 2 O 3 0.2~16.0mol%、Sb 2 O 3 0.1~10.0mol%、Co 3 O 4 0.2~6.0mol%、Ni 2 O 3 0.1~4.0mol%、MnCO 3 0.1~5.0mol%、B 2 O 3 0.1~10.0mol%.材料制备方法依次包括：“添加物预磨、与主料混料、细磨、喷雾干燥”得到瓷粉。瓷粉再经过“干压成型、排塑、烧结、被银、焊接、包封”制成压敏电阻器件。

VARISTOR CONTROLLED LIQUID CRYSTAL DISPLAY DEVICE

Fabrication of praseodymium-based zinc oxide varistors

본 발명은 프라세오디뮴계 산화아연 바리스터 및 그 제조방법에 관한 것으로, 산화아연(ZnO), 프라세오디뮴 산화물(Pr 6 O 11 ), 코발트 산화물(CoO), 크롬 산화물(Cr 2 O 3 )에, 에르븀 산화물(Er 2 O 3 )을 첨가하여 소결함으로써 미세구조적 밀도가 5.3g/㎤ 이상인 동시에 전기적 유전손실계수가 5.5% 이하인 바리스터를 제조하는 것으로써, 이 바리스터는 종래의 비스무스(Bi)계 바리스터와는 근본적으로 조성물이 다를 뿐만 아니라 바리스터 특성이 우위에 있고, 종래의 프라세오디뮴계와도 비교시 바리스터 특성이 우수할 뿐만 아니라 특성의 변화가 적은 차세대 바리스터를 제공하는 것을 특징으로 한다. The present invention relates to a praseodymium-based zinc oxide varistor and a method for manufacturing the same, to zinc oxide (ZnO), praseodymium oxide (Pr 6 O 11 ), cobalt oxide (CoO), chromium oxide (Cr 2 O 3 ), erbium oxide ( Er 2 O 3 ) is added and sintered to produce varistors having a fine structural density of 5.3 g / cm 3 or more and an electrical dielectric loss factor of 5.5% or less. This varistor is essentially different from conventional bismuth (Bi) varistors. Not only are the compositions different, but the varistor characteristics are superior, and compared to the conventional praseodymium-based, it is characterized by providing a next-generation varistor which is not only excellent in the varistor characteristics but also less changes in the characteristics.

ESD protection device and method thereof and mobile electronic device with the same

정전기보호소자, 그 제조 방법 및 이를 구비한 휴대용 전자장치가 제공된다. 본 발명의 일 실시예에 따른 정전기보호소자는 한 쌍의 하면전극, 한 쌍의 상면전극, 복수의 커패시터전극, 및 전극들의 쌍 각각을 연결하는 한 쌍의 연결부를 포함하는 유전체기판; 유전체기판과 병렬 연결되도록 유전체기판의 상면전극에 적층 결합되며 단일부품으로 이루어진 바리스터; 및 유전체기판의 상면 및 바리스터를 몰딩하는 몰딩부를 포함한다. 이에 의하면, 정전기에 대한 내성을 강화하고 커패시턴스 용량을 동시에 향상시키므로, 제품의 신뢰성을 향상시킬 수 있고, 제조공정을 단순화하고 다양한 용량에 따른 라인업이 용이하여 제조효율을 향상시키고 제조단가를 감소시킬 수 있으며, 바리스터 부품의 온도특성을 보완하여 전체 패키지의 온도특성을 안정화시킬 수 있으므로 제품의 신뢰성을 향상시킬 수 있다. Provided are an electrostatic protection device, a method for manufacturing the same, and a portable electronic device having the same. An electrostatic protection device according to an embodiment of the present invention includes: a dielectric substrate including a pair of bottom electrodes, a pair of top electrodes, a plurality of capacitor electrodes, and a pair of connecting portions connecting each pair of electrodes; a varistor laminated and coupled to the upper surface electrode of the dielectric substrate so as to be connected in parallel with the dielectric substrate and made of a single component; and a molding unit for molding the upper surface of the dielectric substrate and the varistor. According to this, since the resistance to static electricity is strengthened and the capacitance capacity is improved at the same time, the reliability of the product can be improved, the manufacturing process is simplified and the lineup according to various capacities is easy, so that the manufacturing efficiency can be improved and the manufacturing cost can be reduced. In addition, it is possible to stabilize the temperature characteristics of the entire package by supplementing the temperature characteristics of the varistor parts, so that the reliability of the product can be improved.

Barista

Zinc oxide varistor ceramics

FIELD: chemistry. SUBSTANCE: zinc oxide varistor ceramics comprises oxides of zinc, bismuth, antimony, cobalt and aluminum in a proportion, wt %: ZnO 85-95 , Bi 2 O 3 1.38-4.15, Sb 2 O 3 0.96-2.9, Al 2 O 3 1.66-4.95, Co 2 O 3 1-3. Bismuth, antimony, cobalt and aluminum oxides have the following ratio 1.0:0.7:1.2:0.72. The resulting varistor ceramics has breakdown voltage of 4.3-4.6 kV/mm, nonlinear coefficient of 47-53 and leakage current density of 0.6-7 mA/cm 2 . EFFECT: reduced eakage current density, while providing high electrical characteristics, the obtained high-voltage varistor ceramics is cheaper. 1 tbl, 4 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 612 423 C1 (51) МПК C04B 35/453 (2006.01) H01C 7/112 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ФОРМУЛА (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ 2016112511, 01.04.2016 (24) Дата начала отсчета срока действия патента: 01.04.2016 Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 01.04.2016 (45) Опубликовано: 09.03.2017 Бюл. № 7 (56) Список документов, цитированных в отчете о поиске: RU 2568444 C1, 20.11.2015. RU 2564430 C2, 27.09.2015. US 2009/0142590 A1, 04.06.2009. CN 0104671772 A, 03.06.2015. JP 57-053905 A, 31.03.1982. 2 6 1 2 4 2 3 Адрес для переписки: 184209, Мурманская обл., г. Апатиты, Академгородок, 26а, ФГБУН ИХТРЭМС КНЦ РАН , Патентный отдел, В.П. Ковалевскому (73) Патентообладатель(и): Федеральное государственное бюджетное учреждение науки Институт химии и технологии редких элементов и минерального сырья им. И.В. Тананаева Кольского научного центра Российской академии наук (ИХТРЭМС КНЦ РАН) (RU) R U 09.03.2017 (72) Автор(ы): Громов Олег Григорьевич (RU), Савельев Юрий Алексеевич (RU), Тихомирова Елена Львовна (RU), Локшин Эфроим Пинхусович (RU) 2 6 1 2 4 2 3 R U (57) Формула изобретения Оксидно-цинковая варисторная керамика, включающая оксиды цинка, висмута, сурьмы, алюминия и кобальта, отличающаяся тем, что керамика содержит оксидные компоненты в ...

Patent JPS5626122B2

Lightning arrester

본 발명은 전기적으로 병렬 접속하는 소자기둥이 증가하여도 설치면적을 축소할 수 있게 한 피뢰기를 제공하는 것이다. An object of the present invention is to provide a lightning arrester capable of reducing the installation area even when the number of device columns to be electrically connected in parallel increases. 밀폐용기 내에, 비직선 저항체로 이루어지는 소자기둥의 복수개를 배치하고, 각 소자기둥은 과전측 판형상 도체와 접지측 판형상 도체와의 사이에서 전기적으로 병렬로 접속한 피뢰기를 구성할 때, 과전측 판형상 도체(5)와 접지측 판형상 도체(6) 사이에, 과전측 판형상 도체(5)와 도너츠형상의 단간 접속도체(22a, 22b)에 의하여 전기적으로 접속하는 접지측으로부터 홀수번째의 중간 판형상 도체(15a)와, 접지측 판형상 도체(6)와 도너츠형상의 단간 접속도체(11a, 11b)에 의하여 전기적으로 접속하는 접지측으로부터 짝수번째의 중간 판형상 도체(15b)를 다단으로 배치한다. 접지측 판형상 도체(6)와 각 중간 판형상 도체와 상기 과전측 판형상 도체와의 사이의 각 단에는, 각각 복수개의 소자기둥(18a∼21a, 18b∼21b, …)를 배치한다. 과전측 판형상 도체(5)와 접지측으로부터 홀수번째의 중간 판형상 도체(15a) 사이와, 상기 접지측 판형상 도체(6)와 접지측으로부터 짝수번째의 중간 판형상 도체(l5b) 사이의 전기적 접속은, 각 중간 판형상 도체에 형성한 비접촉부에 위치시키는 단간 접속도체(11a, 11b)에 의하여 행하고 있다. When a plurality of element pillars made of a nonlinear resistor are disposed in a hermetically sealed container and each of the element pillars is constituted by an electric connection between the upper plate-shaped conductor and the ground-side plate-like conductor electrically connected in parallel, And an odd-numbered (grounded) conductor 5 is electrically connected between the plate-shaped conductor 5 and the ground-side plate-shaped conductor 6 by electrically connecting the plate-shaped conductor 5 and the donor- The middle plate-shaped conductor 15a and the even-numbered middle plate-shaped conductor 15b are electrically connected to each other by the donor-shaped interlayer connecting conductors 11a and 11b, . A plurality of element pillars (18a to 21a, 18b to 21b, ...) are disposed at the respective ends between the ground-side plate-shaped conductor (6), each of the intermediate plate-shaped conductors and the upper plate-shaped conductor. Between the grounding-side plate-like conductor 5 and the odd-numbered intermediate plate-shaped conductor 15a from the ground side and between the ground-side plate-like conductor ...

Lateral high-resistance additive for zinc oxide varistor, zinc oxide varistor produced using same, and process for producing said varistor

本发明提供一种具有包括放电耐电流量特性在内的、优异可靠性的氧化锌变阻器。为达到该目的，本发明将由换算为Fe 2 O 3 为1～40%(摩尔)的铁、换算为Bi 2 O 3 为0～20%(摩尔)以下的铋、其余为SiO 2 的原料粉末分散于聚乙烯醇等的水溶性粘结剂溶液中，涂布于氧化锌变阻器的成型体或煅烧件，在其侧面上形成形成以Zn 2 SiO 4 为主成分、以固溶有Fe的Zn 7 Sb 2 O 12 为副成分的高电阻层。

Pressure sensitive nonlinear resistor, method for producing pressure sensitive nonlinear resistor and lighting arrester

优异的压敏非线性电阻体、其避雷器及该电阻体制法。此电阻体是在以氧化锌为主成分且含氧化铋的组成料中，添加Y、Ho、Er、Yb中至少一种氧化物，按R 2 O 3 换算的量为0.05～1.0mol%。第一烧成步骤是在大气中进行，第二烧成步骤的降温过程则是在700～400℃之间按0～5℃/小时的降温梯度的退火过程或保温过程，此两过程都是在氧分压不低于50(体积)%的气氛中进行。

Method for producing sintered zinc oxide

Surge arrester and manufacturing method thereof

피뢰기는 산화아연을 포함하는 특성소자, 특성소자의 양단에 연결되는 내부 전극, 특성 소자와 내부 전극을 수납하는 파이프, 파이프의 내부 공극을 충진하는 컴파운드 및 파이프를 수납하여 파이프와 밀착되는 하우징을 포함한다. The arrester includes a characteristic element including zinc oxide, an internal electrode connected to both ends of the characteristic element, a pipe accommodating the characteristic element and the internal electrode, a compound filling the internal void of the pipe, and a housing accommodating the pipe to be in close contact with the pipe. do. 피뢰기, 파이프, 컴파운드, 하우징 Arrester, Pipe, Compound, Housing

Voltage non-linear resistance ceramic composition and voltage non-linear resistance element

온도 변동시의 용량 특성 변동이 작은 전압 비직선성 저항체 소자를 제공한다. 전압 비직선성 저항체 소자층(2)으로서는, ZnO를 주성분으로 한 소결체가 이용된다. 이 소결체에는, Pr, Co, Ca, 및 Cu 또는 Ni가, 각각, Pr이 0.05 내지 5.0 원자%, Co가 0.1 내지 20 원자%, Ca가 0.01 내지 5.0 원자%, 및 Cu 또는 Ni가 0.0005 내지 0.05 원자%의 범위로 첨가된다. 이들 범위의 경우에, 온도가 25℃인 경우를 기준으로 한 85℃에서의 용량 변화율을 10% 이하로 할 수 있다.