Surface electron emission device and display unit having the same

표면전자 방출소자 및 그를 구비한 디스플레이 장치에 관해 개시되어 있다. 개시된 표면전자 방출소자는 순차적으로 적층된 하부전극, 절연층 및 상부전극와, 상기 상부전극 상에 형성된 나노 구조층을 구비하는 것을 특징으로 한다. A surface electron emitting device and a display device having the same are disclosed. The disclosed surface electron emission device is characterized by having a lower electrode, an insulating layer and an upper electrode sequentially stacked, and a nano structure layer formed on the upper electrode.

Thin-film electron source and display device using the same

METHOD AND DEVICE FOR TRANSMITTING IMAGES ON A SCREEN

METHOD AND DEVICE FOR TRANSMITTING IMAGES ON A SCREEN

L'INVENTION CONCERNE UN PROCEDE ET UN DISPOSITIF POUR TRANSMETTRE DES IMAGES SUR UN ECRAN 13, 14, COMPORTANT DES CENTRES LUMINEUX EXCITES PAR DES RAYONS CATHODIQUES 12, COMMANDES EN FONCTION DE L'IMAGE A TRANSMETTRE 19. LE PROBLEME RESOLU CONSISTE A OBTENIR UNE IMAGE DE QUALITE ELEVEE AVEC UNE UNITE DE CONSTRUCTION COMPACTE. LE PROCEDE EST CARACTERISE EN CE QU'ON EMET UN CHAMP D'ELECTRONS 12 AU MOYEN D'UNE CATHODE 10 A EFFET DE CHAMP A FILM MINCE PRESENTANT A SA SURFACE DES POINTES CATHODIQUES 15 REGULIEREMENT REPARTIES ET ASSOCIEES AUX DIFFERENTS POINTS D'IMAGE 35, CES POINTES ETANT COMMANDEES SEPAREMENT. L'INVENTION EST APPLICABLE AUX APPAREILS DE TELEVISION COMPACTS ET DANS LA TECHNIQUE DE COMMANDE ET DE CONTROLE. THE INVENTION CONCERNS A METHOD AND A DEVICE FOR TRANSMITTING IMAGES ON A SCREEN 13, 14, INCLUDING LUMINOUS CENTERS EXCITED BY CATHODIC RAYS 12, COMMANDS ACCORDING TO THE IMAGE TO BE TRANSMITTED 19. THE PROBLEM SOLVED CONSISTS OF OBTAINING AN IMAGE HIGH QUALITY WITH A COMPACT CONSTRUCTION UNIT. THE PROCESS IS CHARACTERIZED IN THAT WE EMIT A FIELD OF ELECTRONS 12 BY MEANS OF A THIN FILM FIELD EFFECT CATHODE 10 PRESENTING ON ITS SURFACE CATHODIC POINTS 15 REGULARLY DISTRIBUTED AND ASSOCIATED WITH THE VARIOUS IMAGE POINTS 35, THESE TIPS ARE ORDERED SEPARATELY. THE INVENTION IS APPLICABLE TO COMPACT TELEVISION APPARATUS AND IN CONTROL AND CONTROL TECHNOLOGY.

Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, and electron-beam curing device

The present invention provides an electron emitting element which has good energy efficiency and which is capable of controlling a value of current flowing in an electron acceleration layer and an amount of emitted electrons by adjusting a resistance value of the electron acceleration layer and an amount of generated ballistic electrons. An electron emitting element 1 includes an electron acceleration layer 4 including a fine particle layer containing insulating fine particles. In the electron emitting element 1, Ie=α·R−0.67 where Ie [A/cm2] is electron emission current per unit area during the voltage application and R is element resistance [Ω·cm2] per unit area, the element resistance being obtained by dividing (a) a voltage applied between the electrode substrate 2 and the thin-film electrode 3 during the voltage application by (b) current in element per unit area which current flows between the electrode substrate 2 and the thin-film electrode 3 during the voltage application, and where α is not less than 2.0×10−6, and the electron emission current Ie is not less than 1.0×10−9.

Image transferring method and apparatus

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Emitter and method of making

An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Field emission source array, method for producing the same, and its use

本发明提供能够使表面电极的所希望的区域发射出电子的场发射型电子源及其制造方法,场发射型电子源10具备作为导电性基板的p型硅基板1、形成于p型硅基板1内的主表面侧的带状的作为扩散层的n型区域8、形成于n型区域8上,从n型区域注入的电子发生漂移的、氧化的多孔多晶硅构成的强电场漂移层6、形成于强电场漂移层6之间的多晶硅层3,以及在与n型区域8交叉的方向上形成带状,跨越强电场漂移层6上面及多晶硅层3上面形成的导电性薄膜构成的表面电极7。适当选择施加电压的n型区域8和表面电极7,能够使得施加电压的表面电极7中只有与施加电压的n型区域8交叉的区域发射出电子,所以能够使表面电极7的所希望的区域发射出电子。

Electron source device and display

一种电子源装置，包含由绝缘体构成、具有配置在与主面垂直方向的多个微细孔的多孔层(例如，多孔氧化铝层)；以及配置在该多孔层的两侧的第1和第2导电层，将第2导电层作为阳极、在和第1导电层之间加上直流电压时的电流密度I/S在1μA/cm 2 以上。式中，S表示第1导电层和第2导电层以及多孔层的重叠部分的面积。由于可以获得一种高电子发射能力、廉价且即使在低真空度下也具有长寿命的电子源装置，因此能实现高发光效率、高可靠性的显示装置。

High emission low voltage electron emitter

An electron emitter has an emitter made of a dielectric material, and an upper electrode and a lower electrode to which a drive voltage is applied to emit electrons. The upper electrode is formed on a first surface of the substance serving as the emitter, and the lower electrode is formed on a second surface of the substance serving as the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. The upper electrode has a surface which faces the emitter in peripheral portions of the through regions and which is spaced from the emitter.

Electron emitter

An electron emitter (10A) has an emitter (12) made of a dielectric material, and an upper electrode (14) and a lower electrode (16) to which a drive voltage (Va) is applied to emit electrons. The upper electrode (14) is formed on a first surface of the emitter (12), and the lower electrode (16) is formed on a second surface of the emitter (12). The upper electrode (14) has a plurality of through regions (20) through which the emitter (12) is exposed. The upper electrode (14) has a surface which faces the emitter (12) in peripheral portions (26) of the through regions (20) and which is spaced from the emitter (12).

Electron emission device and electron emission display

An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked with each other, the first electrode includes a carbon nanotube layer, a number of holes defines in the semiconductor layer, and a portion of the carbon nanotube layer suspended on the number of holes.

Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, and electron-beam curing device

The present invention provides an electron emitting element which has good energy efficiency and which is capable of controlling a value of current flowing in an electron acceleration layer and an amount of emitted electrons by adjusting a resistance value of the electron acceleration layer and an amount of generated ballistic electrons. An electron emitting element 1 includes an electron acceleration layer 4 including a fine particle layer containing insulating fine particles. In the electron emitting element 1, Ie=α·R −0.67 where Ie [A/cm 2 ] is electron emission current per unit area during the voltage application and R is element resistance [Ω·cm 2 ] per unit area, the element resistance being obtained by dividing (a) a voltage applied between the electrode substrate 2 and the thin-film electrode 3 during the voltage application by (b) current in element per unit area which current flows between the electrode substrate 2 and the thin-film electrode 3 during the voltage application, and where α is not less than 2.0×10 −6 , and the electron emission current Ie is not less than 1.0×10 −9 .

Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device

An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9≦y≦75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.

NETWORK OF ELECTRONIC SOURCES BY FIELD ISSUANCE AND MANUFACTURING PROCEDURE OF THE SAME.

Una red de fuentes (10) electrónicas por emisión de campo que comprende un substrato eléctricamente conductor (1) que tiene una capa eléctricamente conductora (8) situada sobre una de las superficies principales de dicho substrato conductor; una capa de deriva de campo eléctrico intenso (6) formada sobre la citada capa conductora (8) de dicho substrato eléctricamente conductor (1), y electrodos de superficie (7) de una película delgada eléctricamente conductora formada sobre la capa de deriva de campo eléctrico intenso (6), en la que se inyectan electrones desde dicho substrato eléctricamente conductor (1) en la citada capa de deriva de campo eléctrico intenso (6) y son derivados y descargados a través de la citada película conductora delgada cuando se aplica, durante la actuación de la red, una tensión a través de dicha película conductora delgada y de dicha capa conductora (8) del citado substrato eléctricamente conductor (1), sirviendo la citada película conductora delgada como electrodo positivo, en la que dicha capa conductora (8) está formada por una pluralidad de bandas que se extienden en paralelo unas con otras a intervalos predeterminados sobre dicho substrato conductor (1), y la citada película conductora delgada (7) está formada por una pluralidad de bandas que se extienden en paralelo unas con otras a intervalos predeterminados de una manera que se enfrentan a, y que cruzan sobre, las bandas de dicha capa conductora (8) a través de la citada capa de deriva de campo eléctrico intenso (6), y en la que dicha capa de deriva de campo eléctrico intenso (6) es una capa semiconductora policristalina porosa (3) que ha sido sometida a oxidación o nitración, con regiones de dicha capa de deriva de campo eléctrico intenso (6) que están retenidas entre la citada capa conductora (8) y la citada película conductora delgada en puntos de intersección de las bandas de dicha capa conductora (8) y de dicha película conductora delgada, formando con ello una pluralidad de ...

Electron emitter

A dielectric-film-type electron emitter includes an emitter section (12), a first electrode (14), and a second electrode (16). The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

Flat screen layout

Electron emission source

本发明涉及一种电子发射源，其包括：依次层叠设置的一第一电极，一半导体层，一绝缘层以及一第二电极，其中，所述电子发射源还包括设置于所述半导体层与所述绝缘层之间的一电子收集层，所述电子收集层为一导电层。

Electron source device and display

An electron source device includes a porous layer (for example, porous alumina layer) which is composed of an insulator and has many microscopic holes provided in a direction perpendicular to a main surface, and first and second conductor layers placed on both sides of the porous layer, and is characterized in that the current density I/S is 1 µA/cm 2 or higher when a direct-current voltage is applied between the second conductor layer and the fist conductor layer while using the second conductor layer as an anode. In this case, S represents the overlapping area of the first conductor layer, the second conductor layer and the porous layer. Consequently, an electron source device having a high electron emission ability and a long life even when the degree of vacuum is low can be obtained at low cost, and hence, a display having a high luminous efficiency and high reliability can be realized.

Electron-optical terminal image device based on a cold cathode

A cold cathode (3) in the form of a solid thin film component is the basis for electron-optical terminal image devices. The thin-film structure consists of a base electrode (5), e.g. in the form of a bundle of parallel strips, an insulating film (6), a semiconductor film (7) and a covering electrode (8), e.g. also a bundle of parallel strips but running perpendicularly to the base electrode (5) bundle. This set of layers borne on a substrate plate (4), is in an evacuated casing (2) and is opposite a fluorescent screen (12) or a light emitter (15), the metallised coating (11) of which forms the counter-pole for the electron acceleration chamber (9). The main applications of such electron-optical terminal image devices are embodiments as matrix-addressed flat displays, image converters or write/read lines.

Electron emitter

Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate (11); an emitter section (12) formed of a dielectric material; a first electrode (14) formed on the top surface of the emitter section; and a second electrode (16) formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.

Electron-optical terminal image device based on a cold cathode

A cold cathode (3) in the form of a solid thin film component is the basis for electron-optical terminal image devices. The thin-film structure is made up of a base electrode (5), e.g., in the form of a bundle of parallel strips, an insulating film (6), a semiconductor film (7) and a covering electrode (8), e.g., also a bundle of parallel strips but running perpendicularly to the base electrode (5) bundle. This set of layers borne on a substrate plate (4), is in an evacuated casing (2) and is opposite a fluorescent screen (12) or a light emitter (15), the metalized coating (11) of which forms the counter-pole for the electron acceleration chamber (9). The main applications of such electron-optical terminal image devices are embodiments as matrix-addressed flat displays, image converters or write/read lines.

Electron emission element and electron emission element manufacturing method

An electron emission element (10A) includes an emitter (12) formed by a dielectric body, an upper electrode (14) and a lower electrode (16) to which a drive voltage Va for emitting electrons is applied. The upper electrode (14) is formed by scale-shaped conductive particles on the upper surface (12a) of the emitter (12) and has a plurality of openings (20). The portion of the upper electrode (14) opposing to the emitter (12) in the circumferential portion (26) of the openings (20) is apart from the emitter (12). Moreover, a circumferential portion (26) of the openings (20) has an acute angle shape, in a cross sectional view, toward the inner brim (26b) of the openings (20) as the tip end of the circumferential portion (26), i.e., a shape in which electric lines of force are concentrated. With the aforementioned configuration, it is possible to increase the electron emission amount as compared to the conventional electron emission element.

Electric field emission type electron source

전자를 안정되게 고효율로 방출할 수 있는 저가의 전계 방사형 전자원(電子源) 및 그 제조 방법을 제공한다. n형 실리콘 기판(1, 101)의 주 표면측에 강전계 드리프트(drift)부 (6, 106)가 형성되고, 강전계 드리프트부(6, 106)상에 금박막으로 이루어진 표면 전극(7, 107)이 형성된다. 또, n형 실리콘 기판(1, 101)의 뒷면에는 오믹(ohmic)전극(2, 102)이 형성된다. 이 전계 방사형 전자원(11, 110)에서는 표면 전극 (7, 107)을 진공중에 배치하고, 표면 전극(7,107)을 오믹 전극(2, 102)에 대해 양극(+)으로 하여 직류 전압을 인가함으로써, n형 실리콘 기판(1, 101)에서 주입된 전자가 강전계 드리프트부(6, 106)를 드리프트하여 표면 전극(7, 107)을 통해 방출된다. 강전계 드리프트부(106)는, 도전성 기판인 n형 실리콘 기판(101)의 두께 방향으로 직교하는 단면이 망목상(網目狀)으로 형성되어 상기 전자가 드리프트되는 드리프트부(161)와, 망목 내에 채워지며 드리프트부(161)보다도 열전도성이 좋은 방열부(162)로 이루어진다. Provided are a low-cost field emission electron source capable of stably emitting electrons stably and with high efficiency and a method of manufacturing the same. Strong field drift portions 6 and 106 are formed on the main surface side of the n-type silicon substrates 1 and 101, and surface electrodes 7 made of a gold thin film on the strong field drift portions 6 and 106 are formed. 107 is formed. In addition, ohmic electrodes 2 and 102 are formed on the back surfaces of the n-type silicon substrates 1 and 101. In the field emission electron sources 11 and 110, the surface electrodes 7 and 107 are disposed in a vacuum, and the surface electrodes 7 and 107 are the anodes (+) with respect to the ohmic electrodes 2 and 102 to apply a DC voltage. The electrons injected from the n-type silicon substrates 1 and 101 drift the strong electric field drift portions 6 and 106 and are emitted through the surface electrodes 7 and 107. The strong electric field drift portion 106 is formed in a mesh shape with a cross section orthogonal to the thickness direction of the n-type silicon substrate 101 serving as the conductive substrate, and the electrons drift, and in the mesh. Filled and made of a heat dissipation unit 162 having better thermal conductivity than the drift unit 161.

Electron emitter

An electron emitter has an emitter made of a dielectric material, and an upper electrode and a lower electrode to which a drive voltage is applied to emit electrons. The upper electrode is formed on a first surface of the substance serving as the emitter, and the lower electrode is formed on a second surface of the substance serving as the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. The upper electrode has a surface which faces the emitter in peripheral portions of the through regions and which is spaced from the emitter.

Emitter and method of making

Electron emitter

Electron emission device, method for making thereof, and display

本發明涉及一種電子發射裝置，其包括複數間隔設置的電子發射單元，所述電子發射單元包括一第一電極、一絕緣層及一第二電極，所述絕緣層層疊設置在所述第一電極和第二電極之間，所述第一電極為所述電子發射源的電子發射端，所述第一電極為一奈米碳管複合結構，該奈米碳管複合結構包括一奈米碳管層及一半導體層複合層疊設置，所述半導體層位於所述奈米碳管層與所述絕緣層之間。本發明涉及一種電子發射裝置的製備方法及採用上述電子發射裝置的顯示器。

Dielectric device

A dielectric device of higher performance is provided. An electron emitter to which the dielectric device of the present invention is applied includes an emitter formed by a dielectric, and an upper electrode and a lower electrode to which a drive voltage is applied for the purpose of electron emission. The emitter includes an upper layer formed from plural dielectric particles, and a lower layer formed from plural dielectric particles, below the upper layer. The upper layer and/or lower layer are formed by aerosol deposition.

Electron emission device and electron emission display

An electron emission device includes a number of electron emission units, wherein each of the number of electron emission units includes a first electrode, an insulating layer, and a second electrode stacked in that sequence, wherein the first electrode is a carbon nanotube composite structure having a carbon nanotube layer and a semiconductor layer stacked together, and the semiconductor layer is sandwiched between the carbon nanotube layer and the insulating layer, the first electrodes in the number of electron emission units are spaced apart from each other, and the second electrodes in the number of electron emission units are spaced apart from each other.

Field emission-type electron source

A lower electrode ( 2 ) and surface electrode ( 7 ) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate ( 1 ) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer ( 3 ) is formed on the lower electrode ( 2 ), An electron transit layer ( 6 ) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer ( 3 ). The electron transit layer ( 6 ) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode ( 2 ) and the surface electrode ( 7 ) such that the surface electrode ( 7 ) has a higher potential, electrons are injected from the lower electrode ( 2 ) toward the surface electrode ( 7 ), and emitted through the surface electrode ( 7 ) through the electron transit layer ( 6 ).

Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, electron-beam curing device, and method for producing electron emitting element

An electron emitting element of the present invention includes an electron acceleration layer that includes insulating fine particles but does not include conductive fine particles, the electron acceleration layer being provided between an electrode substrate and a thin-film electrode. This electron emitting element accelerates electrons in the electron acceleration layer and emits the electrons from the thin-film electrode, when a voltage is applied between the electrode substrate and the thin-film electrode. Accordingly, the electron emitting element of the present invention makes dielectric breakdown hard to occur. Further, this electron emitting element is produced easily at low cost and capable of emitting a steady and sufficient amount of electrons.

Electron emitter

A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

Flat panel display device utilizing electron emission devices

A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.

Electron emitter

An electron emitter 10 A has an emitter 12 made of a dielectric material and an upper electrode 14 and a lower electrode 16 for being supplied with a drive voltage Va for emitting electrons. The upper electrode 14 is disposed on an upper surface of the emitter, and the lower electrode 16 is disposed on a lower surface of the emitter 12. The upper electrode 14 has a plurality of through regions 20 through which the emitter 12 is exposed. Each of the through regions 20 of the upper electrode 14 has a peripheral portion 26 having a surface facing the emitter 12 and spaced from the emitter 12.

Feldemissionselektronenquellenmatrix und deren herstellungsverfahren

電子放出装置及びその駆動方法

ディスプレイ、撮像素子、平面光源などに用いられ、経時変化を抑制できる電子放出装置の駆動方法を提供する。電子放出装置の駆動方法は、各々が、珪素又は珪素を主成分とする混合物若しくはその化合物からなる電子供給層、電子供給層上に形成された絶縁体層、及び絶縁体層上に形成された金属薄膜電極からなり、封着された複数の電子放出素子を有する電子放出装置の駆動方法であって、電子供給層及び金属薄膜電極間に電力を供給して電子放出素子から電子を放出せしめる駆動ステップと、駆動ステップ後に、電子供給層及び金属薄膜電極間に流れる素子電流の印加電圧に関する微分値に不連続が生じる印加電圧値以上の再活性化電圧を印加する再活性化ステップと、を含む。

Ionisationsdetektor und Detektionsverfahren

In mindestens einer Ausführungsform umfasst der Ionisationsdetektor (1):- eine Gate-Isolator-Substrat-Elektronen-Emissionsstruktur, GIS-EE (2), die dazu eingerichtet ist, niederenergetische Elektronen (e) zu emittieren,- einen Probenraum (3), der für mindestens ein zu detektierendes Gas (4) eingerichtet ist und der an die GIS-EE (2) angrenzt, und- eine Messeinheit (5), die für eine Detektion oder Selektion von geladenen Teilchen (e, i) eingerichtet ist, wobei die geladenen Teilchen (e, i) auf die emittierten Elektronen (e) zurückgehen und/oder die emittierten Elektronen (e) umfassen.

Electron emitting element

This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

電子發射裝置及電子發射顯示器

本發明涉及一種電子發射裝置，其包括複數條形第一電極及條形第二電極交叉且間隔設置，所述複數條形第一電極相互間隔並沿第一方向延伸，所述複數條形第二電極相互間隔並沿第二方向延伸，位於交叉位置處的條形第一電極與條形第二電極之間形成一電子發射單元，每一電子發射單元包括依次層疊設置的一半導體層及一絕緣層，所述條行第一電極為一奈米碳管層，所述半導體層包括複數孔洞，所述條形奈米碳管層覆蓋所述複數孔洞，對應孔洞位置處的條形奈米碳管層懸空設置。

Feldemissionselektronenquelle

电子发射元件及其制造方法、使用电子发射元件的各装置

提供一种电子发射元件、电子发射装置、自发光设备、图像显示装置、送风装置、冷却装置、带电装置、图像形成装置、电子线硬化装置及电子发射元件的制造方法。本发明的电子发射元件在电极基板和薄膜电极之间具有电子加速层，该电子加速层含有绝缘体微粒且不含导电微粒。该电子发射元件，在电极基板和薄膜电极之间施加电压时，通过电子加速层使电子加速，从薄膜电极发射电子。从而，本发明的电子发射元件难以产生绝缘破坏，可以容易且廉价地制造，可以进行稳定且良好的量的电子发射。

电子发射元件及其制造方法、使用电子发射元件的各装置

提供一种电子发射元件、电子发射装置、自发光设备、图像显示装置、送风装置、冷却装置、带电装置、图像形成装置、电子线硬化装置及电子发射元件的制造方法。本发明的电子发射元件在电极基板和薄膜电极之间具有电子加速层，该电子加速层含有绝缘体微粒且不含导电微粒。该电子发射元件，在电极基板和薄膜电极之间施加电压时，通过电子加速层使电子加速，从薄膜电极发射电子。从而，本发明的电子发射元件难以产生绝缘破坏，可以容易且廉价地制造，可以进行稳定且良好的量的电子发射。

전계방사형 전자원

글라스 기판, 세라믹 기판 등의 절연성 기판으로 이루어진 기판(1)의 한 쪽 주표면에 층형상의 도전성 탄화물층으로 이루어진 하부전극(2)이 형성되어 있다. 하부전극(2) 위에, 도프되지 않은 다결정 실리콘층(3)이 형성되어 있다. 다결정 실리콘층(3) 위에, 산화된 다공질다결정 실리콘층으로 이루어진 전자통과층(6)이 형성되어 있다. 전자통과층(6)은 다결정 실리콘과 이 다결정 실리콘의 입계(粒界) 부근에 존재하는 다수의 나노 결정 실리콘이 혼재하는 복합 나노 결정층으로 이루어진다. 하부전극(2)과 표면전극(7) 사이에, 표면전극(7)이 고전위가 되도록 전압이 인가될 때, 전자 e-가 전자통과층(6)내를 하부전극(2)에서 표면전극(7)을 향해 통과하고, 표면전극(7)을 통해 외부로 방출된다.

電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、および電子放出素子の製造方法

【課題】適度な電圧の印加により十分な電子放出量が得られる電子放出素子を提供する。 【解決手段】この発明によれば、第１電極と、第１電極上に形成され、絶縁体微粒子で構成された絶縁体微粒子層と、前記絶縁体微粒子層上に形成された第２電極と、を備え、前記絶縁体微粒子層は、第２電極側の表面に前記絶縁体微粒子層の層厚よりも深さが小さい凹部が形成され、第１電極と第２電極との間に電圧が印加されると、第１電極から供給される電子を前記絶縁体微粒子層で加速させて第２電極から放出させる電子放出素子が提供される。 【選択図】図１

電子發射源及其製備方法

本發明涉及一種電子發射源，包括：一第一電極、一絕緣層及一第二電極，所述絕緣層層疊設置在所述第一電極和第二電極之間，所述第一電極為所述電子發射源的電子發射端，其中，所述第一電極為一奈米碳管複合結構，該奈米碳管複合結構包括一奈米碳管層及一半導體層複合層疊設置，所述半導體層位於所述奈米碳管層與所述絕緣層之間。本發明還提供一種電子發射源的製備方法。

電界放出源及びその製造方法

电子发射元件及其制造方法、使用电子发射元件的各装置

提供一种电子发射元件、电子发射装置、自发光设备、图像显示装置、送风装置、冷却装置、带电装置、图像形成装置、电子线硬化装置及电子发射元件的制造方法。本发明的电子发射元件中，设在电极基板和薄膜电极之间的电子加速层有含有绝缘性微粒的微粒层构成，该微粒层中含有碱性分散剂。从而，可以提供一种没有绝缘体层内的绝缘破坏的问题且可以廉价地制造的电子发射元件。

電子放出素子

Electron emitting element

This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

電子放出素子

【課題】優れた電子放出特性及び優れた寿命特性を有する電子放出素子を提供する。【解決手段】本発明の電子放出素子は、下部電極と、下部電極に対向する表面電極と、下部電極と表面電極との間に配置された抵抗層と、下部電極と表面電極との間に配置された絶縁層とを備え、抵抗層は、導電性微粒子を分散状態で有する絶縁性樹脂層であり、絶縁層は、電子放出領域を定めるための周縁領域と、周縁領域により定められた電子放出領域と重なるように配置された放出制御領域とを有し、放出制御領域は、線形状の絶縁層から構成される又は複数のドット形状の絶縁層から構成される又は線形状の絶縁層と複数のドット形状の絶縁層の両方から構成され、周縁領域により定められた電子放出領域の面積中の放出制御領域の面積のパーセンテージは、２％以上６０％以下であることを特徴とする。【選択図】図２

電子放出素子およびその製造方法

本開示では、第１の電極１と、絶縁膜からなる電子加速層６と、第２の電極３と、被覆膜７とが、順に積層されてなる積層構造を備え、上記第２の電極は、電子を透過し、表面から電子を放出する電極であり、上記被覆膜は、電子を透過する膜であり、かつ上記第２電極とは異なる材質の保護膜であり、電子放出面５を構成することを特徴とする、電子放出素子１０を提供する。

Ionization Detector and Detection Method

In an embodiment an ionization detector includes a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons, a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE and a measuring unit configured to detect and/or select charged particles, wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons.

Ionisationsdetektor und Detektionsverfahren

In mindestens einer Ausführungsform umfasst der Ionisationsdetektor (1):- eine Gate-Isolator-Substrat-Elektronen-Emissionsstruktur, GIS-EE (2), die dazu eingerichtet ist, niederenergetische Elektronen (e) zu emittieren,- einen Probenraum (3), der für mindestens ein zu detektierendes Gas (4) eingerichtet ist und der an die GIS-EE (2) angrenzt, und- eine Messeinheit (5), die für eine Detektion oder Selektion von geladenen Teilchen (e, i) eingerichtet ist, wobei die geladenen Teilchen (e, i) auf die emittierten Elektronen (e) zurückgehen und/oder die emittierten Elektronen (e) umfassen.

电子发射装置、其制备方法及显示器

本发明涉及一种电子发射装置，其包括多个条形第一电极以及多个条形第二电极交叉且间隔设置，所述多个条形第一电极相互间隔并沿一第一方向延伸，所述多个条形第二电极相互间隔并沿一第二方向延伸，位于交叉位置处的条形第一电极与条形第二电极之间设置一绝缘层，所述条形第一电极为一碳纳米管复合结构，所述碳纳米管复合结构包括一碳纳米管层及一半导体层复合层叠设置，所述半导体层设置于所述碳纳米管层与所述绝缘层之间。本发明涉及一种电子发射装置的制备方法以及采用上述电子发射装置的显示器。

電子放出素子、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置

【課題】薄膜電極を適度な厚みまで薄くでき、電子放出量の向上を図ることのできる電子放出素子を提供する。 【解決手段】電子放出素子１は、電極基板２と薄膜電極３との間に電子加速層４を備え、電子加速層４は、絶縁体微粒子５と、絶縁体微粒子５より平均粒径の小さい導電微粒子６および塩基性分散剤６０の少なくとも一方と、を含んでおり、電子加速層４の表面粗さは、中心線平均粗さ（Ｒａ）で０．２μｍ以下となっている。さらに、薄膜電極３の層厚は、１００ｎｍ以下となっている。 【選択図】図１

Flache bildschirmanordnung

Image display device

An object of the invention is to provide a thin-film cathode having a base electrode, an upper electrode and an electron accelerator disposed therebetween and made of an insulator or a semiconductor, wherein a diode current rises with a lower threshold voltage that that in the background art, so that a diode current required for electron emission can be secured with a low voltage, and to obtain an image display device long in life and low in power consumption. Platinum-group metal (Group VIII), noble metal belonging to Group Ib, or a laminated film, a mixed film or an alloy film of those materials containing an alkali metal oxide, an alkaline earth metal compound or a compound of transition metal belonging to Group III to VII from the interface with an electron accelerator to the surface is used as an upper electrode.

电子发射元件和用于制造该电子发射元件的方法

本发明提供一种电子发射元件和用于制造该电子发射元件的方法。该电子发射元件，包括：第一电极；绝缘精细颗粒层，其形成在所述第一电极上并由第一绝缘精细颗粒以及大于第一绝缘精细颗粒的第二绝缘精细颗粒组成，所述绝缘精细颗粒层的表面具有由第二绝缘精细颗粒形成的凸部；以及第二电极，其形成在所述绝缘精细颗粒层上，其中，当在第一电极与第二电极之间施加电压时，从第一电极提供的电子在绝缘精细颗粒层中被加速，以经由所述凸部从第二电极发射出。

电子发射元件、使用所述元件的设备和用于制造所述元件的方法

本发明提供一种电子发射元件，其包括：第一电极；绝缘细粒层，其形成在第一电极上并且由绝缘细粒构成；以及第二电极，其形成在绝缘细粒层上，其中绝缘细粒层设置有在其表面中形成的凹陷，该表面面对第二电极，每个凹陷具有的深度小于绝缘细粒层的厚度，并且当电压施加在第一电极与第二电极之间时，从第一电极提供的电子在绝缘细粒层中加速，从而经过第二电极而发射。

电子发射元件及其制造方法

本发明提供一种电子发射元件及其制造方法。该电子发射元件，包括：第一电极；绝缘层，其形成在所述第一电极上并且具有贯通孔的开口；第二电极，其形成在所述绝缘层上，所述第二电极被布置成使得至少覆盖所述开口，并且经由所述开口而面向所述第一电极；以及，精细颗粒层，其布置在所述第一电极和所述第二电极之间，所述精细颗粒层由绝缘精细颗粒和导电精细颗粒构成，其中，所述绝缘层被布置在所述第一电极和所述精细颗粒层之间或在所述第二电极和所述精细颗粒层之间，当在所述第一电极和所述第二电极之间施加电压时，电子从所述第一电极发射，并且在所述精细颗粒层中被加速，以通过所述第二电极。

电子发射元件及其制造方法

本发明提供一种电子发射元件及其制造方法。该电子发射元件，包括：第一电极；绝缘层，其形成在所述第一电极上并且具有贯通孔的开口；第二电极，其形成在所述绝缘层上，所述第二电极被布置成使得至少覆盖所述开口，并且经由所述开口而面向所述第一电极；以及，精细颗粒层，其布置在所述第一电极和所述第二电极之间，所述精细颗粒层由绝缘精细颗粒和导电精细颗粒构成，其中，所述绝缘层被布置在所述第一电极和所述精细颗粒层之间或在所述第二电极和所述精细颗粒层之间，当在所述第一电极和所述第二电极之间施加电压时，电子从所述第一电极发射，并且在所述精细颗粒层中被加速，以通过所述第二电极。

Electron emitting element and method for manufacturing same

Provided in the present disclosure is an electron emitting element 10 including a laminated structure in which a first electrode 1, an electron accelerating layer 6 made of an insulation film, a second electrode 3, and a cover film 7 are laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface 5.

Electron emitting element and method for manufacturing same

Provided in the present disclosure is an electron emitting element 10 including a laminated structure in which a first electrode 1 , an electron accelerating layer 6 made of an insulation film, a second electrode 3 , and a cover film 7 are laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface 5.

Gassensor mit einer elektronenemitterstruktur

電子放出素子およびその製造方法

電子放出素子およびその製造方法

【課題】 十分な電子が放出されるとともに絶縁は各破壊が生じにくい電子放出素子を提供する。 【解決手段】この発明によれば、第１電極と、第１電極上に形成され、第１絶縁体微粒子と第１絶縁体微粒子よりも大きい第２絶縁体微粒子とにより構成され、その表面に第２絶縁体微粒子で形成された凸部が配置された絶縁体微粒子層と、前記絶縁体微粒子層上に形成された第２電極と、を備え、第１電極と第２電極との間に電圧が印加されると、第１電極から供給される電子を前記絶縁体微粒子層で加速させて前記凸部を介して第２電極から放出させるように構成されることを特徴とする電子放出素子が提供される。 【選択図】図１

电子发射元件及其制造方法

本公开提供一种电子发射元件(10)，其特征在于，所述电子发射元件具备将第一电极(1)、由绝缘膜构成的电子加速层(6)、第二电极(3)以及被覆膜(7)依次层叠而成的层叠结构，上述第二电极为供电子透过并从表面发射电子的电极，上述被覆膜为供电子透过的膜，并且是材质与上述第二电极不同的保护膜，构成电子发射面(5)。

電子放出素子及びその製造方法

【課題】 消費電力が抑制され、電子放出の効率が高い電子放出素子を提供する。 【解決手段】この発明によれば、第１電極と、第１電極上に形成され、絶縁性微粒子で構成された絶縁性微粒子層と、前記絶縁性微粒子層上に形成された第２電極とを備え、前記絶縁性微粒子が単分散微粒子であり、第１電極と第２電極との間 に電 圧を印加し、第１電極から放出される電子を前記絶縁性微粒子層で加速させて第２電極から放出させるように構成したことを特徴とする電子放出素子が提供される。 【選択図】図１

Electron emitting element and method for manufacturing same

Electron Emission Device, and Driving Method Thereof

Provided is a method of driving an electron emission apparatus used in displays, imaging devices, flat-surface light sources and the like which can restrain a change with time. The method drives the electron emission apparatus including a plurality of electron emission devices each having an electron supply layer formed of silicon, a silicon-based mixture or a compound thereof, an insulator layer formed on the electron supply layer and a thin film metal electrode formed on the insulator layer, the plurality of electron emission devices being sealed and comprises: a driving step for supplying power between the electron supply layer and the thin film metal electrode to cause electrons to be emitted from the electron emission device and a reactivating step for applying a reactivating voltage at a level equal to or higher than an applied voltage value which causes discontinuity in differential value of the device current flowing between the electron supply layer and the thin film metal electrode with respect to the applied voltage after the driving step.

Electron emitting element and method for manufacturing same

Provided in the present disclosure is an electron emitting element 10 including a laminated structure in which a first electrode 1, an electron accelerating layer 6 made of an insulation film, a second electrode 3, and a cover film 7 are laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface 5.

电子发射元件及其生成方法

本发明提供了一种电子发射元件，该电子发射元件包括：第一电极；形成于第一电极上的且由绝缘精细颗粒构成的绝缘精细颗粒层；以及形成于绝缘精细颗粒层上的第二电极，其中绝缘精细颗粒是单分散精细颗粒，并且当在第一电极与第二电极之间施加电压时，电子被从第一电极释放到绝缘精细颗粒层中并且通过绝缘精细颗粒层被加速，以从第二电极发射。

电子发射元件、使用所述元件的设备和用于制造所述元件的方法

本发明提供一种电子发射元件，其包括：第一电极；绝缘细粒层，其形成在第一电极上并且由绝缘细粒构成；以及第二电极，其形成在绝缘细粒层上，其中绝缘细粒层设置有在其表面中形成的凹陷，该表面面对第二电极，每个凹陷具有的深度小于绝缘细粒层的厚度，并且当电压施加在第一电极与第二电极之间时，从第一电极提供的电子在绝缘细粒层中加速，从而经过第二电极而发射。

電子放出素子、電子放出素子を用いた表示装置及び電子放出素子の製造方法

【課題】電子放出素子の電子放出の効率を向上させるとともに素子の損傷を防止する。 【解決手段】非結晶質の電子供給層（４）と、電子供給層（４）上に形成された絶縁体層（５）と、絶縁体層（５）上に形成された上部電極（６）とを有し、電子供給層（４）と上部電極（６）間に電界が印加されたときに電子を放出する電子放出素子であって、 上部電極（６）と絶縁体層（５）が切り欠かれ電子供給層（４）が露出した凹部（７）と、上部電極（６）と凹部（７）上を覆って電子供給層（４）の露出面（４ａ）の縁部分（４ｃ）に接触し、さらに電子供給層（４）の露出面（４ａ）の内側部分（４ｂ）上で隆起して電子供給層（４）との間に空洞（８ｂ）を有するドーム形状（８ａ）となっている炭素層（８）とを有する。 【選択図】図３

電子放出素子、電子放出素子を用いた表示装置及び電子放出素子の製造方法

Tunneling emitter with nanohole openings

電子エミッタ構造体、当該電子エミッタ構造体を備える装置および自由電子を生成する方法

電子エミッタ構造体は、ａ）第１の側と第２の側とを有する、金属の混合物からなる大気安定性の電子放出層と、ｂ）調整可能な電界において、電子放出層から解放された電子を加速する加速区間を備える、電子放出層の第１の側にある電子加速構造体とを含んでおり、この加速区間は１０ｎｍ～１μｍの範囲の長さｌを有している。外部光電効果エミッタ、粒子収集装置、トンネル－面エミッタ、半導体ベースのダイレクトエミッタおよびこれを備える液体イオナイザ、これを用いて自由電子を生成する方法およびこれを用いて粒子を収集する方法も開示されている。

電子エミッタ構造体、当該電子エミッタ構造体を備える装置および自由電子を生成する方法

Elektronenemitterstruktur, vorrichtungen mit dieser elektronenemitterstruktur und verfahren zum erzeugen von freien elektronen

Elektronenemitterstruktur, umfassend: a) eine atmosphärenstabile Elektronenemissionsschicht aus einem Gemisch von Metallen mit einer ersten Seite und einer zweiten Seite; und b) eine Elektronenbeschleunigungsstruktur auf der ersten Seite der Elektronenemissionsschicht mit einer Beschleunigungsstrecke zur Beschleunigung von aus der Elektronenemissionsschicht herausgelösten Elektronen in einem einstellbaren elektrischen Feld, wobei die Beschleunigungsstrecke die eine Länge 1 in einem Bereich von 10 nm bis 1 μm aufweist, sowie einen Äußerer-Photoeffekt-Emitter, eine Partikelsammelvorrichtung, einen Tunnel-Flächenemitter, einen halbleiterbasierten Direktemitter und einen Flüssigkeitsionisator mit derselben, ein Verfahren zum Erzeugen von freien Elektronen mittels derselben und ein Verfahren zum Sammeln von Partikeln mittels derselben.

電子發射源

電子發射裝置、其製備方法及顯示器

电子发射装置、其制备方法及显示器

本发明涉及一种电子发射装置，其包括多个间隔设置的电子发射单元，所述电子发射单元包括一第一电极、一绝缘层以及一第二电极，所述绝缘层层叠设置在所述第一电极和第二电极之间，所述第一电极为所述电子发射源的电子发射端，所述第一电极为一碳纳米管复合结构，该碳纳米管复合结构包括一碳纳米管层及一半导体层复合层叠设置，所述半导体层位于所述碳纳米管层与所述绝缘层之间。本发明涉及一种电子发射装置的制备方法以及采用上述电子发射装置的显示器。

電子發射裝置、其製備方法及顯示器

电子发射元件及其生成方法

本发明提供了一种电子发射元件，该电子发射元件包括：第一电极；形成于第一电极上的且由绝缘精细颗粒构成的绝缘精细颗粒层；以及形成于绝缘精细颗粒层上的第二电极，其中绝缘精细颗粒是单分散精细颗粒，并且当在第一电极与第二电极之间施加电压时，电子被从第一电极释放到绝缘精细颗粒层中并且通过绝缘精细颗粒层被加速，以从第二电极发射。

Field emission display

A display having hot electron type electron sources displaying an image by a line sequential scanning scheme is provided to prevent poor brightness uniformity along scan lines. The hot electron type electron source is provided with a top electrode bus line serving as a scan line and a bottom electrode bus line serving as a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. As a result, high quality image without poor brightness uniformity can be obtained.

Flat panel display device utilizing electron emission devices

A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.

Cold cathode fluorescent display panels

Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, electron-beam curing device, and method for producing electron emitting element

An electron emitting element of the present invention includes an electron acceleration layer between an electrode substrate and a thin-film electrode. The electron acceleration layer includes a binder component in which insulating fine particles and conductive fine particles are dispersed. Therefore, the electron emitting element of the present invention is capable of preventing degradation of the electron acceleration layer and can efficiently and steadily emit electrons not only in vacuum but also under the atmospheric pressure. Further, the electron emitting element of the present invention can be formed so as to have an improved mechanical strength.

冷陰極型フラットパネルディスプレイ

薄膜型電子源アレイの上部電極（１３）への給電線となる上部配線電極（１６）の下に、第二層間絶縁層（１５）を形成して短絡不良を防止する。さらに、電子放出部を第二層間絶縁層（１５）で制限することにより、電子加速層（１２）と第一層間絶縁層（１４）の境界に偏在する欠陥を被覆して、経時的な絶縁破壊不良を抑止する。

电子发射装置及显示器

本发明涉及一种电子发射装置，其包括多个电子发射单元间隔设置，所述电子发射单元包括依次层叠设置的一第一电极，一半导体层，一绝缘层以及一第二电极，其中，所述电子发射单元还包括设置于所述半导体层与所述绝缘层之间的一电子收集层，所述电子收集层为一导电层，任意相邻的电子发射单元中的第一电极相互间隔，任意相邻的电子发射单元中的第二电极相互间隔。本发明还提供一种电子发射显示器。

Electron Emitting Device, Display Apparatus Using Electron Emitting Device, and Method of Manufacturing Electron Emitting Device

[PROBLEMS] To provide an electron emitting layer with improved efficiency of electron emission and prevented damage of the device. [SOLVING MEANS] An electron emitting device including an amorphous electron supply layer 4, an insulating layer 5 formed on the electron supply layer 4, and an electrode 6 formed on the insulating layer 5, the electron emitting device emitting electrons when an electric field is applied between the electron supply layer 4 and the electrode 6, wherein the electron emitting device includes a concave portion 7 provided by notching the electrode 6 and the insulating layer 5 to expose the electron supply layer 4, and a carbon layer 8 covering the electrode 6 and the concave portion 7 except for an inner portion 4 b of an exposed surface 4 a of the electron supply layer 4 and being in contact with an edge portion 4 c of the exposed surface 4 a of the electron supply layer 4.

Electron emission element, display employing electron emission element, and method for fabricating electron emission element

[PROBLEMS] To provide an electron emitting layer with improved efficiency of electron emission and prevented damage of the device. [SOLVING MEANS] An electron emitting device including an amorphous electron supply layer 4, an insulating layer 5 formed on the electron supply layer 4, and an electrode 6 formed on the insulating layer 5, the electron emitting device emitting electrons when an electric field is applied between the electron supply layer 4 and the electrode 6, wherein the electron emitting device includes a concave portion 7 provided by notching the electrode 6 and the insulating layer 5 to expose the electron supply layer 4, and a carbon layer 8 covering the electrode 6 and the concave portion 7 except for an inner portion 4b of an exposed surface 4a of the electron supply layer 4 and being in contact with an edge portion 4c of the exposed surface 4a of the electron supply layer 4.

電子放出素子、電子放出素子を用いた表示装置及び電子放出素子の製造方法

電子放出素子の電子放出の効率を向上させるとともに素子の損傷を防止する。非結晶質の電子供給層（４）と、電子供給層（４）上に形成された絶縁体層（５）と、絶縁体層（５）上に形成された上部電極（６）とを有し、電子供給層（４）と上部電極（６）間に電界が印加されたときに電子を放出する電子放出素子であって、上部電極（６）と絶縁体層（５）が切り欠かれ電子供給層（４）が露出した凹部（７）と、上部電極（６）と凹部（７）上を電子供給層（４）の露出面（４ａ）の内側部分（４ｂ）を除いて覆い電子供給層（４）の露出面（４ａ）の縁部分（４ｃ）に接触する炭素層（８）とを有する。

Electron emitter structure, external photoelectric effect emitter, particle collecting device, tunnel surface emitter, semiconductor-based direct emitter and liquid ioniser comprising same, gas sensor comprising an emitter or emitter structure, method for generating free electrons, and method for collecting particles

An electron emitter structure includes an electron emission layer which is arranged to have a first side and a second side, and an electron accelerating structure which is arranged on the first side of the electron emission layer. The electron emission layer has a mixture of metals so as to be atmospherically stable. The electron accelerating structure has at least one electrode which is electrically insulated from the electron accelerating structure so as to form an acceleration path which allows electrons which are released from the electron emission layer to be selectively accelerated upon generation of an adjustable electric field. The acceleration path has a length l of from 10 nm to 1 μm.

场致发射型电子源

一种场致发射型电子源及其制造方法,在n型硅基板主表面侧形成强电场漂移单元,在该单元上形成金薄膜构成的表面电极。在n型硅基板背面形成欧姆电极。表面电极配置在真空中,且相对欧姆电极作为正极,通过施加直流电压,从n型硅基板注入的电子在强电场漂移单元漂移经表面电极发射。强电场漂移单元由与作为基板的n型硅基板的厚度方向垂直的剖面呈网孔状的电子进行漂移的漂移单元和填满在网孔中导热性比漂移单元好的散热单元构成。

Fuente de electrones por emision por efecto de campo.

Se facilita una fuente de electrones en emisión de campo a bajo coste en la que los electrones se pueden emitir con alta estabilidad y alta eficiencia, y un procedimiento para producir la misma. En la fuente de emisión de electrones en campo, se forma una parte de deriva de campo eléctrico fuerte 106 en el sustrato de silicio de tipo n sobre la superficie principal del mismo y se forma un electrodo de superficie 107 hecho de una película delgada de oro sobre la parte de deriva de campo eléctrico fuerte 106. Y el electrodo óhmico 2 se forma sobre la superficie posterior del sustrato de silicio de tipo n 101. En esta fuente de electrones de emisión de campo 110, cuando el electrodo de superficie 107 está colocado en el vacío y se aplica una tensión continua al electrodo de superficie 107 que tiene una polaridad positiva con respecto al sustrato de silicio de tipo n 101 (electrodo óhmico 2) los electrones inyectados desde el sustrato de silicio de tipo n se conducen en la parte de deriva de campo eléctrico fuerte 106 y se emiten a través del electrodo superficial 107. La parte de deriva de campo eléctrico fuerte 106 comprende una región de deriva 161 que tiene una sección de cruce en la estructura de malla en ángulos rectos respecto a la dirección de grosor del sustrato de silicio de tipo n 1, que es un sustrato eléctricamente conductor, y una región de radiación de calor 162 que se rellena en los huecos de la malla y que tiene una conducción de calor más alta que la región de deriva 161.

전계 방사형 전자원

전자를 안정되게 고효율로 방출할 수 있는 저가의 전계 방사형 전자원(電子源) 및 그 제조 방법을 제공한다. n형 실리콘 기판(1, 101)의 주 표면측에 강전계 드리프트(drift)부 (6, 106)가 형성되고, 강전계 드리프트부(6, 106)상에 금박막으로 이루어진 표면 전극(7, 107)이 형성된다. 또, n형 실리콘 기판(1, 101)의 뒷면에는 오믹(ohmic)전극(2, 102)이 형성된다. 이 전계 방사형 전자원(11, 110)에서는 표면 전극 (7, 107)을 진공중에 배치하고, 표면 전극(7,107)을 오믹 전극(2, 102)에 대해 양극(+)으로 하여 직류 전압을 인가함으로써, n형 실리콘 기판(1, 101)에서 주입된 전자가 강전계 드리프트부(6, 106)를 드리프트하여 표면 전극(7, 107)을 통해 방출된다. 강전계 드리프트부(106)는, 도전성 기판인 n형 실리콘 기판(101)의 두께 방향으로 직교하는 단면이 망목상(網目狀)으로 형성되어 상기 전자가 드리프트되는 드리프트부(161)와, 망목 내에 채워지며 드리프트부(161)보다도 열전도성이 좋은 방열부(162)로 이루어진다.

Electron emission element and electron emission element manufacturing method

An electron emission element (10A) includes an emitter (12) formed by a dielectric body, an upper electrode (14) and a lower electrode (16) to which a drive voltage Va for emitting electrons is applied. The upper electrode (14) is formed by scale-shaped conductive particles on the upper surface (12a) of the emitter (12) and has a plurality of openings (20). The portion of the upper electrode (14) opposing to the emitter (12) in the circumferential portion (26) of the openings (20) is apart from the emitter (12). Moreover, a circumferential portion (26) of the openings (20) has an acute angle shape, in a cross sectional view, toward the inner brim (26b) of the openings (20) as the tip end of the circumferential portion (26), i.e., a shape in which electric lines of force are concentrated. With the aforementioned configuration, it is possible to increase the electron emission amount as compared to the conventional electron emission element.

電界放出源及び電界放出装置

【課題】本発明は、電界放出源に関する。 【解決手段】本発明の電界放出源は第一電極と、半導体層と、絶縁層と、第二電極と、を含み、絶縁層、半導体層及び第一電極は第二電極の一方の表面に順に積層され、第一電極は前記電界放出源の電子放出端であり、第一電極はカーボンナノチューブ層であり、半導体層は間隔のあいた複数の孔を有し、複数の孔と対応する第一電極の部分は懸架される。 【選択図】図１