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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 6124. Отображено 100.
05-01-2012 дата публикации

Charged particle apparatus, scanning electron microscope, and sample inspection method

Номер: US20120004879A1
Автор: Atsuko Fukada, Muneyuki Fukuda, Noritsugu Takahashi, Tomoyasu Shojo
Принадлежит: Hitachi High Technologies Corp

An object of the invention is to be able to select easily and quickly inspection recipes which are appropriate to samples from any number of inspection recipes. A calculating device displays a plurality of inspection recipes on the GUI. An inspection recipe includes settings for controlling charged particle columns which irradiate charged particles on samples with a plurality of characteristics. Plural inspection recipes are arranged and displayed on a coordinate system which is specified by a plurality of axes having characteristic values (robustness variable of charge up, throughput of defect inspection, and accuracy of defect inspection) which have mutually trade-off relationships.

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Номер записи: 1
29-03-2012 дата публикации

Methods for discretized processing and process sequence integration of regions of a substrate

Номер: US20120074096A1
Автор: Alexander Gorer, David E. Lazovsky, Thomas R. Boussie, Tony P. Chiang
Принадлежит: Individual

The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

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Номер записи: 2
12-04-2012 дата публикации

Ion Beam Sample Preparation Apparatus and Methods

Номер: US20120085923A1
Автор: John Andrew Hunt, Steven Thomas Coyle
Принадлежит: Gatan Inc

Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. Additionally, apparatus kits are disclosed that enable the use of the same shields in the observation of prepared samples.

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Номер записи: 3
24-05-2012 дата публикации

Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process

Номер: US20120126147A1
Автор: Sarko Cherekdjian
Принадлежит: Corning Inc

Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.

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Номер записи: 4
07-06-2012 дата публикации

Electron beam column and methods of using same

Номер: US20120138791A1
Автор: Carmela MORENO, Liqun Han, Marian Mankos, Rex Runyon, Xinrong Jiang
Принадлежит: KLA Tencor Corp

In one embodiment, a first vacuum chamber of an electron beam column has an opening which is positioned along an optical axis so as to pass a primary electron beam that travels down the column. A source that emits electrons is positioned within the first vacuum chamber. A beam-limiting aperture is configured to pass a limited angular range of the emitted electrons. A magnetic immersion lens is positioned outside of the first vacuum chamber and is configured to immerse the electron source in a magnetic field so as to focus the emitted electrons into the primary electron beam. An objective lens is configured to focus the primary electron beam onto a beam spot on a substrate surface so as to produce scattered electrons from the beam spot. Controllable deflectors are configured to scan the beam spot over an area of the substrate surface. Other features and embodiments are also disclosed.

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Номер записи: 5
19-07-2012 дата публикации

High-Vacuum Variable Aperture Mechanism And Method Of Using Same

Номер: US20120181444A1
Автор: Mohammed Tahmassebpur
Принадлежит: KLA Tencor Corp

A novel technique is disclosed for varying a size of an aperture within a vacuum chamber. A drive mechanism within the vacuum chamber is used to adjust a partial horizontal overlap between at least two blades, wherein a perimeter of the aperture opening is defined by edges of said blades. In one embodiment, a variable aperture mechanism includes first and second blades attached to a first support, and third and fourth blades attached to a second support. The first blade is spaced vertically above the second blade on the first support; a second support, and the fourth blade is spaced vertically above the third blade on the second support. There is a partial horizontal overlap between the first and third blades and between the fourth and second blades, and the aperture opening has a perimeter defined by edges of the four blades. Other embodiments are also disclosed.

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Номер записи: 6
26-07-2012 дата публикации

Transmission Electron Microscope

Номер: US20120187293A1
Автор: Hidetaka Sawada, Naoya Shibata, Wataru Inami
Принадлежит: Jeol Ltd, University of Tokyo NUC

A scanning transmission electron microscope using optical fibers as optical guiding media. The microscope obtains a high-angle scattering image or a dark-field image from electrons transmitted through a specimen. A scintillator converts electrons transmitted through the specimen into optical signals. The optical fibers couple outputs from the scintillator to the photodetector segments. The connections of the fibers with the photodetector segments are formed into arbitrary shapes.

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Номер записи: 7
06-09-2012 дата публикации

Electron beam source system and method

Номер: US20120223245A1
Автор: Jan P. Bennett, John Bennett, Mark Troll
Принадлежит: Individual

An embodiment includes an electron beam source system having a first electron beam source unit with a substrate having a substrate-top end and a substrate-bottom end; and a first lens coupled to the substrate-bottom end defining a first aperture and having a lens-top end and a lens-bottom end. Further embodiments comprise an electron-emission region at the substrate-bottom end and aligned with the first aperture, the electron-emission region being operable to emit one or more electrons due to one or more photons contacting the electron-emission region, which may include passing through the substrate and into the electron-emission region, wherein the electron-emission region comprises a first doped portion of the substrate.

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Номер записи: 8
25-10-2012 дата публикации

Detection apparatus and operating method

Номер: US20120266700A1
Автор: Chengda ZHU, Kiyoung Kwon, Zhen Wei
Принадлежит: BOE Technology Group Co Ltd, Hefei BOE Optoelectronics Technology Co Ltd

The disclosed technology provides a detection apparatus and its operating method. The disclosed technology provides a detection apparatus, comprising: a test chamber, an exchange chamber, and a communicating mechanism, which is provided between the test chamber and the exchange chamber and capable of rendering the test chamber and the exchange chamber separated from or communicated with each other; wherein transmission devices are positioned within the test chamber and the exchange chamber, respectively, and the transmission devices are adapted to convey a probe frame from the test chamber to the exchange chamber or from the exchange chamber to the test chamber.

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Номер записи: 9
03-01-2013 дата публикации

System and method for producing a mass analyzed ion beam for high throughput operation

Номер: US20130001414A1
Автор: Bon-Woong Koo, Frank Sinclair, Svetlana Radovanov, Victor M. Benveniste
Принадлежит: Varian Semiconductor Equipment Associates Inc

A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.

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Номер записи: 10
10-01-2013 дата публикации

Image generating method and device using scanning charged particle microscope, sample observation method, and observing device

Номер: US20130010100A1
Автор: Atsushi Miyamoto, Go Kotaki, Kenji Nakahira, Takashi Hiroi
Принадлежит: Hitachi High Technologies Corp

In a process of acquiring an image of semiconductor patterns by using a scanning electron microscope (SEM), this invention provides an image generating method and device that allows a high-resolution SEM image to be produced while suppressing damages caused by SEM imaging to a sample as a result of irradiation of an electron beam. A plurality of areas having similarly shaped patterns (similar areas) are extracted from a low-resolution SEM image which has been imaged while suppressing the irradiation energy of electron beam. From the image data of the extracted areas a single high resolution image of the patterns is generated by image restoration processing. Further, the method of this invention also uses design data in determining the similar areas and the SEM imaging position and imaging range for performing the image restoration processing.

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Номер записи: 11
17-01-2013 дата публикации

Plasma nitriding method and plasma nitriding apparatus

Номер: US20130017690A1
Автор: Daisuke Tamura, Hideyuki Noguchi, Kazuyoshi Yamazaki, Koichi Takatsuki, Tomohiro Saito
Принадлежит: Tokyo Electron Ltd

In a plasma nitriding method, a processing gas containing nitrogen gas and rare gas is introduced into a processing chamber of a plasma processing apparatus by setting a flow rate thereof as a total flow rate [mL/min(sccm)] of the processing gas per 1 L volume of the processing chamber within a range from 1.5 (mL/min)/L to 13 (mL/min)/L. Further, a nitriding process is performed on oxygen-containing films of target objects to be processed by generating a nitrogen-containing plasma in the processing chamber and while exchanging the target objects.

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Номер записи: 12
24-01-2013 дата публикации

Plasma nitriding method

Номер: US20130022760A1
Автор: Masaki Sano, Toshinori Debari
Принадлежит: Tokyo Electron Ltd

A plasma nitriding method includes performing a high nitrogen-dose plasma nitriding process on an object having an oxide film by introducing a processing gas containing a nitrogen gas into a processing chamber of a plasma processing apparatus and generating a plasma containing a high nitrogen dose; and performing a low nitrogen-dose plasma nitriding process on the object by generating a plasma containing a low nitrogen dose. After the performing the high nitrogen-dose plasma nitriding process is completed, a plasma seasoning process is performed in the chamber by generating a nitrogen plasma containing a trace amount of oxygen by introducing a rare gas, a nitrogen gas and an oxygen gas into the chamber and setting a pressure in the chamber in a range from about 532 Pa to 833 Pa and a volume flow rate ratio of the oxygen gas in all the gases in a range from about 1.5% to 5%.

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Номер записи: 13
07-02-2013 дата публикации

Gasket with positioning feature for clamped monolithic showerhead electrode

Номер: US20130034967A1
Автор: Gautam Bhattacharyya, Gregory R. Bettencourt, Sandy Chao, Simon Gosselin Eng.
Принадлежит: Individual

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

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Номер записи: 14
14-02-2013 дата публикации

Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies

Номер: US20130037755A1
Автор: Stanford R. Ovshinsky
Принадлежит: Stanford R. Ovshinsky

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon.

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Номер записи: 15
18-04-2013 дата публикации

Target positioning device, method for driving a target positioning device, and a lithography system comprising such a target positioning device

Номер: US20130094008A1
Автор: Jerry Johannes Martinus Peijster
Принадлежит: Mapper Lithopraphy IP BV

A target positioning device, in particular for a lithography system, comprising a carrier for carrying a target, and a stage for carrying and moving the carrier along a first direction (X). The stage comprising two X-stage bases, both arranged on top of a common base plate, each X-stage base carries an X-stage carriage, and a Y-beam comprising a Y-stage for carrying said carrier and moving the carrier said carrier in a second direction (Y). The Y-beam bridges the space between the X-stage carriages and is connected to the X-stage carriages via a flexible coupling. The device further comprises two motors each for driving a corresponding X-stage carriage along its corresponding X-stage base. The two motors are arranged at least substantially below the stage. Each motor of said two motors is coupled to an eccentric cam or crank which is connected to the corresponding X-stage carriage via a crank shaft.

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Номер записи: 16
27-06-2013 дата публикации

Pattern Dimension Measurement Method Using Electron Microscope, Pattern Dimension Measurement System, and Method for Monitoring Changes in Electron Microscope Equipment Over Time

Номер: US20130166240A1
Автор: Chie Shishido, Katsuhiro Sasada, Maki Tanaka
Принадлежит: Hitachi High Technologies Corp

Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.

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Номер записи: 17
25-07-2013 дата публикации

Photocathode high-frequency electron-gun cavity apparatus

Номер: US20130187541A1
Автор: Junji Urakawa, Nobuhiro Terunuma, Toshikazu Takatomi
Принадлежит: Inter University Research Institute Corp High Energy Accelerator Research Organization

A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity ( 1 ), a photocathode ( 8, 15 ), a laser entering port ( 9 ), a high-frequency power input coupler port ( 10 ), and a high-frequency resonant tuner ( 16 ). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell ( 5 ) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.

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Номер записи: 18
01-08-2013 дата публикации

Systems and Methods for Investigating a Characteristic of a Material Using Electron Microscopy

Номер: US20130193321A1
Автор: Lisa H. Chan, Mathew M. Nowell, Peter A. de Kloe, Stuart I. Wright, Tera Lynn Nylese
Принадлежит: Edax Inc

Various embodiments of the present invention provide systems and methods for determining an characteristic of a material. The characteristics may include, but are not limited to, crystallographic and chemical composition characteristics of a material.

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Номер записи: 19
08-08-2013 дата публикации

Three-dimensional mapping using scanning electron microscope images

Номер: US20130200255A1
Автор: Ishai Schwarzband, Yakov Weinberg
Принадлежит: Applied Materials Israel Ltd

A method includes irradiating a surface of a sample, which is made-up of multiple types of materials, with a beam of primary electrons. Emitted electrons emitted from the irradiated sample are detected using multiple detectors that are positioned at respective different positions relative to the sample, so as to produce respective detector outputs. Calibration factors are computed to compensate for variations in emitted electron yield among the types of the materials, by identifying, for each material type, one or more horizontal regions on the surface that are made-up of the material type, and computing a calibration factor for the material type based on at least one of the detector outputs at the identified horizontal regions. The calibration factors are applied to the detector outputs. A three-dimensional topographical model of the surface is calculated based on the detector outputs to which the calibration factors are applied.

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Номер записи: 20
22-08-2013 дата публикации

Charged particle detector

Номер: US20130214156A1
Автор: Eric Kneedler, Jonathan H. Orloff
Принадлежит: FEI Co

A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

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Номер записи: 21
22-08-2013 дата публикации

Liquid metal ion source and secondary ion mass spectrometric method and use thereof

Номер: US20130216427A1
Автор: Andreas Duetting, Felix Kollmer, Peter Hoerster
Принадлежит: ION TOF Tech GmbH

A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

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Номер записи: 22
26-09-2013 дата публикации

Sample analyzing apparatus and sample analyzing method

Номер: US20130248706A1
Автор: Haruko Akutsu
Принадлежит: Individual

In accordance with an embodiment, a sample analyzing apparatus includes a charged beam generating unit, a detecting unit, and an analyzing unit. The charged beam generating unit is configured to generate a charged beam and apply the charged beam to a sample. The detecting unit is configured to detect charged particles and then output a signal, the charged particles being generated from the sample by the application of the charged beam in a manner depending on a three-dimensional structure and material characteristics of the sample. The analyzing unit is configured to process the signal to analyze the sample.

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Номер записи: 23
26-09-2013 дата публикации

Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer

Номер: US20130250293A1
Автор: Anthony Graupera, Doug Kinion, Mark W. Utlaut, N. William Parker, Philip Brundage, Sean Kellogg, Shouyin Zhang
Принадлежит: FEI Co

A method and apparatus for actively monitoring conditions of a plasma source for adjustment and control of the source and to detect the presence of unwanted contaminant species in a plasma reaction chamber. Preferred embodiments include a spectrometer used to quantify components of the plasma. A system controller is provided that uses feedback loops based on spectral analysis of the plasma to regulate the ion composition of the plasma source. The system also provides endpointing means based on spectral analysis to determine when cleaning of the plasma source is completed.

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Номер записи: 24
21-11-2013 дата публикации

Method and apparatus for cleaning residue from an ion source component

Номер: US20130305989A1
Автор: Aseem K. Srivastava, Glen R. Gilchrist, William F. Divergilio
Принадлежит: Axcelis Technologies Inc

Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed.

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Номер записи: 25
16-01-2014 дата публикации

Charged particle multi-beamlet lithography system with modulation device

Номер: US20140014850A1
Автор: Alexander Hendrik Vincent van Veen, Marco Jan-Jaco Wieland, Remco Jager, Stijn Willem Herman Karel Steenbrink
Принадлежит: Mapper Lithopraphy IP BV

The invention relates to a charged particle lithography system for patterning a target. The lithography system has a beam generator for generating a plurality of charged particle beamlets, a beam stop array with a beam-blocking surface provided with an array of apertures; and a modulation device for modulating the beamlets by deflection. The modulation device has a substrate provided with a plurality of modulators arranged in arrays, each modulator being provided with electrodes extending on opposing sides of a corresponding aperture. The modulators are arranged in groups for directing a group of beamlets towards a single aperture in the beam stop array. Individual modulators within each group have an orientation such that a passing beamlet, if blocking is desired, is directed to a blocking position onto the beam stop array. Beamlet blocking positions for different beamlets are substantially homogeneously spread around the corresponding single aperture in the beam stop array.

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Номер записи: 26
30-01-2014 дата публикации

Apparatus and method for investigating an object

Номер: US20140027512A1
Автор: Christof Baur, Gabriel Baralia, Klaus Edinger, Michael Budach, Thorsten Hofmann
Принадлежит: Carl Zeiss SMS GmbH

The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope and at least one scanning probe microscope with a probe, wherein the scanning particle microscope and the at least one scanning probe microscope are spaced with respect to each other in a common vacuum chamber so that a distance between the optical axis of the scanning particle microscope and the measuring point of the scanning probe microscope in the direction perpendicular to the optical axis of the scanning particle microscope is larger than the maximum field of view of both the scanning probe microscope and the scanning particle microscope, wherein the method comprises the step of determining the distance between the measuring point of the scanning probe microscope and the optical axis of the scanning particle microscope.

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Номер записи: 27
13-02-2014 дата публикации

Sample holding apparatus for electron microscope, and electron microscope apparatus

Номер: US20140042318A1
Автор: Akira Watabe, Toshie Yaguchi, Yusuke Ominami
Принадлежит: Hitachi High Technologies Corp

A sample holding apparatus for electron microscope includes: a sample holding assembly including an assembly of three components of an upper diaphragm holding part, a sample holding plate and a lower diaphragm holding part; and a holding part that holds the sample holding assembly replaceably. The sample holding assembly includes a cell defined between a diaphragm of the upper diaphragm holding part and a diaphragm of the lower diaphragm holding part, and a flow channel connected to the cell, in which a sample mounted at a protrusion of the sample holding plate is placed. The diaphragm of the upper diaphragm holding part, the sample and the diaphragm of the lower diaphragm holding part are disposed along an optical axis of an electron beam.

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Номер записи: 28
10-04-2014 дата публикации

In-column detector for particle-optical column

Номер: US20140097341A1
Автор: Bohuslav Sed'a, Lubomír Tuma, Petr Hlavenka, Petr Sytar, Radek Ceska
Принадлежит: FEI Co

The invention relates to an in-column back-scattered electron detector, the detector placed in a combined electrostatic/magnetic objective lens for a SEM. The detector is formed as a charged particle sensitive surface, preferably a scintillator disk that acts as one of the electrode faces forming the electrostatic focusing field. The photons generated in the scintillator are detected by a photon detector, such as a photo-diode or a multi-pixel photon detector. The objective lens may be equipped with another electron detector for detecting secondary electrons that are kept closer to the axis. A light guide may be used to offer electrical insulation between the photon detector and the scintillator.

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Номер записи: 29
04-01-2018 дата публикации

SYSTEM AND METHOD FOR PERFORMING NANO BEAM DIFFRACTION ANALYSIS

Номер: US20180005798A1
Автор: BERGENDAHL Marc Adam, Demarest James John, Penny Christopher J., Quon Roger Allen, Waskiewicz Christopher Joseph
Принадлежит:

A system for performing nano beam diffraction (NBD) analysis, includes a focused ion beam (FIB) device for preparing a transmission electron microscopy (TEM) sample, a broad beam ion mill for milling the TEM sample to remove a surface portion of the TEM sample, and a strain analyzer for performing NBD analysis on the milled TEM sample to acquire diffraction data. 1. A system for performing nano beam diffraction (NBD) analysis , comprising:a focused ion beam (FIB) device for preparing a transmission electron microscopy (TEM) sample;a broad beam ion mill for milling the TEM sample to remove a surface portion of the TEM sample; anda strain analyzer for performing NBD analysis on the milled TEM sample to acquire diffraction data.2. The system of claim 1 , wherein the milling of the TEM sample exposes an underlying surface of the TEM sample claim 1 , and the strain analyzer uses a TEM camera image resolution of at least 4000×4000 pixels to acquire the diffraction data on the underlying surface.3. The system of claim 1 , wherein the surface portion removed by the broad beam ion mill comprises a portion of the surface of the TEM sample which has been damaged by the FIB device.4. The system of claim 1 , wherein the TEM sample comprises a parallel-sided sample claim 1 , and the broad beam ion mill removes a surface portion from two parallel sides of the parallel-sided sample.5. The system of claim 1 , wherein the removed surface portion comprises a thickness in a range from 1 nm to 45 nm.6. The system of claim 1 , wherein the surface portion comprises at least 10% of a thickness of the TEM sample.7. The system of claim 1 , wherein the diffraction data comprises a sensitivity which is less than 0.1%.8. The system of claim 1 , wherein the diffraction data comprises strain measurement data.9. The system of claim 1 , wherein the TEM sample is extracted from a semiconductor structure.10. The system of claim 9 , wherein the semiconductor structure comprises one of a semiconductor ...

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Номер записи: 30
04-01-2018 дата публикации

SELECTIVE ATOMIC LAYER DEPOSITION WITH POST-DOSE TREATMENT

Номер: US20180005814A1
Автор: Karim Ishtak, KUMAR Purushottam, LaVoie Adrien, Pasquale Frank L., Qian Jun, van Schravendijk Bart J.
Принадлежит:

Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation. 1. A method of processing a patterned substrate in a process chamber , the method comprising:(a) providing the patterned substrate having one or more features;(b) exposing the patterned substrate to a silicon-containing precursor under conditions allowing the silicon-containing precursor to adsorb onto surfaces of the one or more features, thereby forming an adsorbed layer of the silicon-containing precursor over the patterned substrate;(c) before exposing the patterned substrate to a reactant to form a silicon-containing film and after exposing the patterned substrate to the silicon-containing precursor, performing a post-dose treatment operation to preferentially remove the adsorbed layer at tops of the one or more features; and(d) exposing the patterned substrate to the reactant and igniting a first plasma to form the silicon-containing film over the patterned substrate.2. The method of claim 1 , wherein performing the post-dose treatment operation comprises exposing the patterned substrate to a gas selected from the group consisting of nitrogen claim 1 , argon claim 1 , hydrogen claim 1 , ammonia claim 1 , helium claim 1 , and CH claim 1 , wherein x is an integer between and including 1-5 and y is an integer between and including 4-16.3. The method of claim 2 , wherein performing the post-dose treatment operation further comprises igniting a second plasma at a plasma power less than about 6 kW.4. The method of claim 3 , wherein performing the post- ...

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Номер записи: 31
07-01-2021 дата публикации

Charged particle beam application apparatus

Номер: US20210005417A1
Автор: Akira Ikegami, Momoyo Enyama, Takashi Dobashi, Yasuhiro Shirasaki, Yuta Kawamoto
Принадлежит: Hitachi High Tech Corp

A charged particle beam application apparatus includes a beam separator. The beam separator includes a first magnetic pole, a second magnetic pole facing the first magnetic pole, a first electrode and a second electrode that extend along an optical axis of a primary beam and are arranged in a first direction perpendicular to the optical axis, on a first surface of the first magnetic pole which faces the second magnetic pole, and a third electrode and a fourth electrode that extend along the optical axis and face the first electrode and the second electrode, respectively, on a second surface of the second magnetic pole which faces the first magnetic pole.

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Номер записи: 32
07-01-2021 дата публикации

Conductive beam optic containing internal heating element

Номер: US20210005421A1
Автор: Scott E. Peitzsch
Принадлежит: Applied Materials Inc

Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.

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Номер записи: 33
02-01-2020 дата публикации

Characterization of regions with different crystallinity in materials

Номер: US20200006034A1
Автор: Andreas Schulze, Wilfried Vandervorst
Принадлежит: Interuniversitair Microelektronica Centrum vzw IMEC

A method of characterizing a region in a sample under study, and related systems, is disclosed. In once aspect, the sample under study comprises a first region having first crystalline properties and a second region having second crystalline properties. The method comprises irradiating the sample under study with an electron beam, the average relative angle between the electron beam and the sample under study being selected so that a contribution in the backscattered or forward scattered signal of the first region is distinguishable from that of the second region. The method further comprises detecting the backscattered or forward scattered electrons, and deriving a characteristic of the first and/or the second region from the detected backscattered or forward scattered electrons. The instantaneous relative angle between the electron beam and the sample under study is modulated with a predetermined modulation frequency during the irradiating the sample under study with an electron beam. Detecting the backscattered or forward scattered electrons is performed at the predetermined modulation frequency.

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Номер записи: 34
03-01-2019 дата публикации

APPARATUS AND TECHNIQUES FOR ANISOTROPIC SUBSTRATE ETCHING

Номер: US20190006587A1
Автор: Gilchrist Glen F. R., Liang Shurong, Pervaiz Raees, Rockwell Tyler, Starks Kenneth
Принадлежит: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate. 1. A method , comprising:generating a plasma in a plasma chamber, the plasma comprising an etchant species; andextracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, the pulsed ion beam comprising an ON portion and an OFF portion,wherein during the OFF portion the substrate is not biased with respect to the plasma chamber, andwherein a duration of the OFF portion is less than a transit time of the etchant species from the plasma chamber to the substrate.2. The method of claim 1 , wherein the plasma is generated by providing RF power to the plasma chamber claim 1 , the method further comprising adjusting a level of RF power of the plasma in concert with the pulsed ion beam claim 1 , wherein the plasma comprises a first RF power level during the ON portion and a second RF power level during the OFF portion claim 1 , wherein the first RF power level is higher than the second RF power level.3. The method of claim 2 , wherein the second RF power level is adequate to sustain the plasma.4. The method of claim 1 , wherein the etchant species is a thermal neutral species.5. The method of claim 1 , wherein the etchant species comprises at least one of chlorine neutrals and chlorine ions.6. The method of claim 1 , comprising:setting a separation between the plasma chamber and the substrate, wherein the transit time of the etchant species is proportional to the separation; andsetting the duration of the OFF portion to be less than the ...

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Номер записи: 35
08-01-2015 дата публикации

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

Номер: US20150008332A1
Автор: Groholski Alexander, Hill Raymond, Huang Weijie, IV John A., McVey Shawn, Notte, Rahman FHM-Faridur
Принадлежит:

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip. 1. A gas field ion source , comprising:a gun housing,an electrically conductive gun can base attached to the gun housing,an inner tube mounted to the gun can base, the inner tube comprising an electrically isolating material,an electrically conductive tip attached to the inner tube,an outer tube mounted to the gun can base, the outer tube comprising an electrically isolating material, andan extractor electrode attached to the outer tube, the extractor electrode having an opening for the passage of ions generated in proximity to the electrically conductive tip.2. The gas field ion source of claim 1 , further comprising a gas supply comprising a terminating tube attached to the gun can base.3. The gas field ion source of claim 2 , wherein the gas supply is configured to supply a first gas in a first mode of operation of the gas field ion source claim 2 , the gas supply is configured to supply a second gas in a second mode of operation claim 2 , and the first gas is different from the second gas.4. The gas field ion source of claim 2 , further comprising a vacuum pump operatively connected to the outer housing claim 2 , wherein the vacuum pump is configured to evacuate gas out of the outer housing.5. The gas field ion source of claim 1 , further comprising a thermal conductor connected to gun can base claim 1 , wherein the thermal conductor is thermally connected to a cooling ...

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Номер записи: 36
27-01-2022 дата публикации

Charged Particle Beam Apparatus and Setting Assisting Method

Номер: US20220028653A1
Автор: Kuwahara Hirofumi, Miyahara Takenori, Sakata Takahide, Timischl Felix, Watakabe Kazutaka
Принадлежит:

A reference image is generated based on an illumination condition and element information of a specimen. The reference image includes a figure indicating a characteristic X-ray generation range, a numerical value indicating a characteristic X-ray generation depth, or the like. The reference image changes with a change of an accelerating voltage, a tilt angle, or an element forming the specimen. The reference image may include a figure indicating a landing electron scattering range, a figure indicating a back-scattered electron generation range, or the like. 1. A charged particle beam apparatus comprising:a measurement unit configured to illuminate a charged particle beam onto a specimen, and that detects a signal emitted from the specimen;a reference image generator configured to generate a reference image including a figure simulating a signal generation range in the specimen and a numerical value indicating a size of the signal generation range, based on an illumination condition and specimen information for the generation of the reference image; anda display configured to display a graphical user interface image including the reference image when an actual illumination condition of the charged particle beam is set.2. The charged particle beam apparatus according to claim 1 , further comprising:an acquisition unit configured to acquire, as the illumination condition for the generation of the reference image, an illumination condition which is already set for the measurement unit; anda receiver configured to receive, as the illumination condition for the generation of the reference image, an illumination condition which is input through the graphical user interface image.3. The charged particle beam apparatus according to claim 1 , further comprising:an application unit configured to apply, to the measurement unit, as the illumination condition for the generation of the reference image, an illumination condition which is input through the graphical user interface ...

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Номер записи: 37
12-01-2017 дата публикации

LOW-PRESSURE PLASMA SYSTEM WITH SEQUENTIAL CONTROL PROCESS

Номер: US20170011888A1
Автор: Diener Christof-Herbert
Принадлежит:

The low pressure plasma system includes a treatment chamber which is pumped out in a first process step by means of a pump. In a second process step a gas supply valve is opened in order to achieve a defined gas composition in the treatment chamber at low pressure. In a third process step a plasma generator is switched on in order to ignite a plasma in the treatment chamber. In a fourth process step a flushing valve can be opened in order to flush the treatment chamber. In a fifth process step the treatment chamber can be ventilated by way of a ventilation valve. The sequential switching element can be a rotary switch and include a zero switching position where the low pressure plasma system is off. The sequential switching element renders possible a simple embodiment of the low pressure plasma system and its intuitive operation. 1. A low pressure plasma system comprises:a treatment chamber that can be at least in part evacuated, a gas supply valve, a plasma generator and a controller;wherein the controller comprises a vacuum electric circuit, a gas supply electric circuit and a plasma electric circuit;wherein the vacuum electric circuit controls a pump which can be connected to the low pressure plasma system and/or a pump valve of the low pressure plasma system;wherein the gas supply electric circuit controls the gas supply valve;wherein the plasma electric circuit controls the plasma generator;wherein the controller comprises a sequential switching element having switching positions that follow one another for setting process steps that follow one another;wherein the sequential switching element is embodied so as in each switching position to interrupt and to close respectively the vacuum electric circuit, the gas supply electric circuit and the plasma electric circuit by a plurality of switches that are electrically isolated from one another;wherein the sequential switching element comprises a first switching position in which the vacuum electric circuit is ...

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Номер записи: 38
15-01-2015 дата публикации

Charged particle beam device

Номер: US20150014529A1
Автор: Isamu Sekihara, Satoshi Tomimatsu, Terutaka Nanri
Принадлежит: Hitachi High Technologies Corp

Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle θ formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.

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Номер записи: 39
15-01-2015 дата публикации

CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD

Номер: US20150014549A1
Автор: YASHIMA Jun
Принадлежит: NuFlare Technology, Inc.

A charged particle beam writing apparatus includes first and second transmission units to perform first and second transmission processing, where, in the first transmission processing, while one of the units performs data transmission processing, the other unit inputs processing data for N processing regions more than pre-set, data-converted, n processing regions, and while one of the units performs data input processing, the other transmits processing data for (N-n) processing regions in order, and in the second transmission processing, processing data for remaining n processing regions are transmitted in order after the first transmission processing, where one of the units starts inputting the processing data while the other performs the first transmission processing, and does not input processing data for a new processing region after starting the second transmission processing. 1. A charged particle beam writing apparatus comprising:a plurality of conversion processing units configured to perform data conversion processing in parallel for writing data, for each processing region obtained by virtually dividing a writing region of a target object into a plurality of processing regions;first and second transmission units configured to perform a first transmission processing and a second transmission processing, where, in the first transmission processing, while one of the first and second transmission units is performing data transmission processing, an other one of the first and second transmission units inputs processing data for N processing regions more than pre-set n processing regions for which the data conversion processing has been performed, and while one of the first and second transmission units is performing data input processing, an other one of the first and second transmission units transmits processing data for (N-n) processing regions in order, and in the second transmission processing, processing data for remaining n processing regions are ...

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Номер записи: 40
14-01-2016 дата публикации

System and Method for Protection of Vacuum Seals in Plasma Processing Systems

Номер: US20160013025A1
Автор: Nagorny Vladimir, Parks Steven, Zucker Martin
Принадлежит: MATTSON TECHNOLOGY, INC.

Systems and methods for protecting vacuum seals in a plasma processing system are provided. The processing system can include a vacuum chamber defining a sidewall and an inductive coil wrapped around at least a portion of the sidewall. A vacuum seal can be positioned between the sidewall of the vacuum chamber and a heat sink. A thermally conductive bridge can be coupled between the sidewall and heat sink. Further, the thermally conductive bridge can be positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from the sidewall or any heat source to the heat sink so that the heat path bypasses the vacuum seal. 1. A plasma processing system , comprising:a vacuum chamber defining a sidewall;a vacuum seal coupling the sidewall of the vacuum chamber to a heat sink; anda thermally conductive bridge coupled between the sidewall and the heat sink;wherein the thermally conductive bridge is positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from a heat source to the heat sink so that the heat path bypasses the vacuum seal.2. The plasma processing system of claim 1 , wherein the bridge is flexible and conformable to the shape of the vacuum seal and vacuum chamber.3. The plasma processing system of claim 2 , wherein the bridge is elastic so that a contact to the heat source and to the heat sink can be made by compressing the bridge in at least one direction.4. The plasma processing system of claim 3 , wherein the bridge comprises a first component for making contact with the heat source and a second component for making contact with the heat sink.5. The plasma processing system of claim 1 , wherein the bridge comprises a heat conducting component and elastic component coupled to the heat conducting component.6. The plasma processing system of claim 1 , wherein the heat path conducts through at least a portion of the sidewall.7. The plasma processing system of ...

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Номер записи: 41
14-01-2016 дата публикации

SYSTEM AND APPARATUS TO FACILITATE PHYSICAL VAPOR DEPOSITION TO MODIFY NON-METAL FILMS ON SEMICONDUCTOR SUBSTRATES

Номер: US20160013035A1
Автор: Kim Jin Hyun, Nam Michael, Park Jae Yeol, Park Jonggu
Принадлежит: Semicat, Inc.

Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film. 1a chamber including an outer concentric region and an inner concentric region each positioned concentrically relative to a centerline passing through a first portion of the chamber and a second portion of the chamber, the chamber configured to facilitate plasma processing in a plasma processing region bounded by the inner concentric region to modify a semiconductor layer of a non-metal material located in the second portion of the chamber;a center magnetic field generator positioned at the first portion of the chamber and configured to confront the semiconductor layer along the centerline;a first set of magnetic field generators disposed in the outer region about the centerline; anda second set of magnetic field generators disposed in the inner region about the centerline,wherein subsets of the first set of magnetic field generators and the second set of magnetic field generators are disposed at different distances from the center magnetic field generator.. A plasma implementation system comprising: This application is a continuation of copending U.S. Nonprovisional application Ser. No. 12/551,356, filed Aug. 31, 2009 with Attorney Docket No. SEM-002 and entitled, “SYSTEM AND APPARATUS TO FACILITATE PHYSICAL VAPOR DEPOSITION TO MODIFY NON-METAL FILMS ON SEMICONDUCTOR SUBSTRATES;” U.S. Nonprovisional application Ser. No. 12/551,356 is related to U.S. Nonprovisional application Ser. No. 12/551,379, filed Aug. 31, 2009 with Attorney Docket No. SEM-003 and entitled, “METHODS TO FABRICATE NON-METAL FILMS ON SEMICONDUCTOR SUBSTRATES USING PHYSICAL VAPOR DEPOSITION ...

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Номер записи: 42
14-01-2016 дата публикации

OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20160013109A1
Автор: Jun Chung-Sam, KO Woo-Seok, LEE Sang-Kil, YANG Yu-Sin, YUN Seong-Jin
Принадлежит:

An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern. 110.-. (canceled)11. A method of manufacturing a semiconductor device , the method comprising:preparing a multi-layered structure of an upper pattern and a lower pattern, the lower pattern being formed by a first semiconductor process, the upper pattern being formed by a second semiconductor process;irradiating an electron beam onto the multi-layered structure to obtain an actual image of the upper and lower patterns;obtaining a first image representing the upper pattern and a second image representing the lower pattern from the actual image;matching each of the first and second images and a design image of the first and second patterns to determine an overlay between the upper pattern and the lower pattern; andcompensating at least one of the first and second semiconductor processes based on the overlay measurement.12. The method as claimed in claim 11 , wherein obtaining the actual image comprises detecting secondary electrons emitting from an upper layer in which the upper pattern is formed and detecting backscattered electrons emitting from a lower layer in which the lower pattern is formed.13. The method as claimed in claim 11 , wherein obtaining the first image and the second image from the actual ...

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Номер записи: 43
11-01-2018 дата публикации

MULTI MODE SYSTEM WITH A DISPERSION X-RAY DETECTOR

Номер: US20180012728A1
Автор: Litman Alon, Vinnitsky Efim
Принадлежит: Applied Materials Israel Ltd.

A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position. 114.-. (canceled)15. A charged particle beam system , comprising:a controller;a movable stage configured to support a specimen;charged particle beam optics having a charged particle beam optics tip configured to output a primary charged particle beam;a detector comprising a detector tip that includes an aperture, the detector also including an amplifier and a conduit, the conduit surrounding a conductor that is coupled between a sensor element of the detector and the amplifier, wherein the conduit comprises an upper portion, a lower portion positioned below the upper portion and extending substantially parallel to the upper portion, and an intermediate portion coupled between the upper portion and the lower portion; anda detector motion module configured to move the detector between a first position and a second position;wherein, when the detector is positioned at the first position and the movable stage supports the specimen, the detector tip is positioned between the charged particle beam ...

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Номер записи: 44
11-01-2018 дата публикации

CHARGED-PARTICLE BEAM EXPOSURE METHOD AND CHARGED-PARTICLE BEAM CORRECTION METHOD

Номер: US20180012730A1
Автор: BAE SUKJONG, LEE MyoungSoo, Shin Inkyun
Принадлежит:

A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample. 1. A charged-particle beam correctionmethod for use in the manufacturing of electronic devices , comprising:moving a stage on which a target sample is disposed;an exposure process of irradiating the target sample with the charged-particle beam while the stage is moving; andcontrolling the charged-particle beam to impart a direction drift thereto depending on a direction in which the stage is moving,wherein the controlling comprises a correction process including correcting for an error in the direction drift in accordance with the direction in which the stage is moving.2. The method of claim 1 , wherein the moving of the stage comprises moving the stage along a direction parallel to a surface of the target sample irradiated with the charged-particle beam claim 1 , andthe correcting for an error in the direction drift comprises:obtaining a direction drift value when the stage moves along the direction; andrevising a value of drift, measured while the stage is moving along the direction, using the direction drift value.3. The method of claim 1 , wherein the moving of the stage comprises moving the stage along a first direction parallel to a surface of the target sample irradiated with the charged-particle beam and a second direction reverse with respect to the first direction claim 1 , andthe correcting for an error in the direction drift comprises: ...

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Номер записи: 45
10-01-2019 дата публикации

DEVICE PROCESSING METHOD AND DEVICE PROCESSING APPARATUS

Номер: US20190013179A1
Автор: Kawamura Tetsufumi, MACHIDA Shuntaro, RYUZAKI Daisuke, SAGAWA Misuzu, SUGII Nobuyuki, WATANABE Kazuki, WATANABE Keiji
Принадлежит: Hitachi, Ltd.

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate. 1. A device processing method comprising steps of:fabricating a first structure using an ion beam under a first condition in a first region on a substrate;measuring a size of the first structure which is fabricated;comparing the measurement result with design data;determining a second condition from the comparison result; andfabricating a second structure using the ion beam under the second condition in a second region on the substrate.2. The device processing method according to claim 1 , whereinthe second structure is a structure constituting an MEMS, and is fabricated on the MEMS in the middle of manufacturing in the second region.3. The device processing method according to claim 1 , whereinthe step of measuring the size of the first structure includes exposing a cross section of the first structure by etching using the ion beam and performing size measurement of the first structure using the cross section.4. The device processing method according to claim 1 , whereinthe step of measuring the size of the first structure includes performing the size measurement of the first structure using an SEM or an SIM.5. The device processing method according to claim 1 , whereinthe design data includes size data of an MEMS structure and an allowable range of the size data, andthe step of comparing the measurement result with the design data includes automatically ...

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Номер записи: 46
14-01-2021 дата публикации

MULTI-BEAM WRITING METHOD AND MULTI-BEAM WRITING APPARATUS

Номер: US20210013003A1
Автор: MATSUMOTO Hiroshi
Принадлежит: NuFlare Technology, Inc.

In one embodiment, a multi-beam writing method includes forming a beam array of a multi-beam, assigning sub-beam arrays to each of a plurality of sub-stripe regions, the sub-stripe regions being obtained by dividing a region on the substrate, and the sub-beam arrays being obtained by dividing the beam array, calculating an irradiation time modulation rate being used for each beam belonging to each of the sub-beam arrays, calculating a weight for each of the sub-beam arrays based on the irradiation time modulation rate for each of the beams belonging to a group of the sub-beam arrays, and assigning the calculated weight to the sub-beam array, and performing multiple writing on each of the sub-stripe regions by performing writing on each of the sub-stripe regions with the sub-beam arrays, based on the weight assigned to the sub-beam array and the irradiation time modulation rate of the beam belonging to the sub-beam array. 1. A multi-beam writing method comprising:forming a beam array of a multi-beam for scanning a region on a substrate and performing multiple writing;assigning sub-beam arrays to be used for writing to each of a plurality of sub-stripe regions for each time of the writing in the multiple writing, the sub-stripe regions being obtained by dividing a region on the substrate into regions smaller than or equal to a width of the beam array, and the sub-beam arrays being obtained by dividing the beam array;calculating an irradiation time modulation rate being used for each beam belonging to each of the sub-beam arrays;calculating a weight for each of the sub-beam arrays based on the irradiation time modulation rate for each of the beams belonging to a group of the sub-beam arrays, and assigning the calculated weight to the sub-beam array, the group of the sub-beam arrays corresponding to a group of the sub-stripe regions overlapped each other on the substrate; andperforming multiple writing on each of the sub-stripe regions by performing writing on each of ...

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Номер записи: 47
09-01-2020 дата публикации

CHARGED PARTICLE BEAM APPARATUS, OBSERVATION METHOD USING CHARGED PARTICLE BEAM APPARATUS, AND PROGRAM

Номер: US20200013583A1
Автор: Chiba Hiroyuki, Hoshino Yoshinobu, Kawamata Shigeru
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

A charged particle beam apparatus includes: an optical system that irradiates a sample mounted on a sample stage with a charged particle beam; at least one detector that detects a signal generated from the sample; an imaging device that acquires an observation image; a mechanism for changing observation positions in the sample which has at least one of a stage that moves the sample stage and a deflector that changes the charged particle beam's irradiation position; a display unit that displays an operation screen provided with an observation image displaying portion that displays the observation image and an observation position displaying portion that displays an observation position of the observation image; and a controller that controls display processing of the operation screen. The controller superimposes and displays on the observation position displaying portion a plurality of observation position images at different magnifications, based on the observation images' magnifications and coordinates. 1. A charged particle beam apparatus comprising:an optical system that irradiates a sample mounted on a sample stage with a charged particle beam;an imaging device that acquires an image by irradiating the sample with the charged particle beam; anda controller that controls at least one of a stage that moves the sample stage and a deflector that changes an irradiation position of the charged particle beam to change an area of the image to be captured so as to output the image acquired by the imaging device to a display unit,wherein the controller outputs:a first image acquired by the imaging device at a first magnification to a first region of the display unit;a second image acquired in a past by the imaging device at a second magnification lower than the first magnification to a second region of the display unit; andthe first image at higher resolution than that of the second image by superimposing it on the second image based on the irradiation position, when the ...

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Номер записи: 48
19-01-2017 дата публикации

Nano-Patterned System And Magnetic-Field Applying Device Thereof

Номер: US20170018395A1
Автор: Chaohui Guo, Guoqiang Yu, PENG Guo, Xiangqian Zhou, Xiaoyu Sun, Xiufeng Han
Принадлежит: Institute of Physics of CAS

A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.

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Номер записи: 49
16-01-2020 дата публикации

Coating arrangement and method

Номер: US20200017953A1
Автор: Deus Carsten
Принадлежит:

In accordance with various embodiments, a coating arrangement may comprise: an electron beam gun for providing an electron beam; a beam trap for trapping the electron beam; a control device for driving the electron beam gun and/or the beam trap, wherein the control device is configured to switch over the driving between a plurality of configurations, of which: in a first configuration, the electron beam is directed onto the beam trap; and in a second configuration, the electron beam is directed past the beam trap. 1. A coating arrangement , comprising:an electron beam gun for providing an electron beam;a beam trap for trapping the electron beam;a control device for driving the electron beam gun and/or the beam trap,wherein the control device is configured to switch over the driving between a plurality of configurations, of which:in a first configuration, the electron beam is directed onto the beam trap; andin a second configuration, the electron beam is directed past the beam trap.2. The coating arrangement as claimed in claim 1 ,wherein the beam trap comprises a heat exchanger and/or remains in a solid state of matter up to a temperature, wherein the temperature is greater than 1000° C.3. The coating arrangement as claimed in claims 1 ,wherein the beam trap provides a reflection coefficient and an absorption coefficient for electrons, wherein the reflection coefficient is greater than the absorption coefficient.4. The coating arrangement as claimed in claim 1 ,wherein an averaged spatial power density provided by the electron beam is greater in the second configuration than in the first configuration.5. The coating arrangement as claimed claim 1 ,wherein, in the first configuration, the electron beam irradiates a surface of the beam trap, wherein an angle of incidence of the electron beam with respect to the surface is greater than 45°.6. The coating arrangement as claimed in claim 1 ,wherein the beam trap is mounted displaceably between two positions relative to ...

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Номер записи: 50
03-02-2022 дата публикации

System and method for residual gas analysis

Номер: US20220037137A1
Автор: Yen-Liang Chen
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

The present disclosure provides embodiments of a system and method for detecting processing chamber condition. The embodiments include performing a wafer-less processing step in a processing chamber to determine the condition of the chamber walls. Based on an analysis of the residual gas resulting from the wafer-less processing step, an operator or a processing controller can determine whether the chamber walls have deteriorated to such an extent as to be cleaned.

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Номер записи: 51
18-01-2018 дата публикации

SUBSTRATE PROCESSING CHAMBER COMPONENT ASSEMBLY WITH PLASMA RESISTANT SEAL

Номер: US20180019104A1
Автор: "OMALLEY Anthony", BABAYAN Steven E., Dhindsa Rajinder, Doan Khoi, Firouzdor Vahid, Lee Changhun, YOUSIF IMAD
Принадлежит:

Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component. 1. A semiconductor processing chamber component assembly , comprising:a first semiconductor processing chamber component;a second semiconductor processing chamber component; and a first surface configured for exposure to a plasma processing region;', 'a second surface opposite the first side;', 'a first sealing surface extending between the first side and the second side, the first sealing surface contacting the first semiconductor processing chamber component; and', 'a second sealing surface extending between the first side and the second side, the second sealing surface contacting the second semiconductor processing chamber component., 'a sealing member having a body formed substantially from polytetrafluoroethylene (PTFE) and providing a seal between the first and second semiconductor processing chamber components, the body comprising2. The semiconductor processing chamber component assembly of claim 1 , wherein the body includes a first ...

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Номер записи: 52
22-01-2015 дата публикации

PLASMA PROCESSING APPARATUS AND OPERATIONAL METHOD THEREOF

Номер: US20150021294A1
Автор: HIROTA Kosa, INOUE Satomi, Nakamoto Shigeru, TOGAMI Masahito, Usui Tatehito
Принадлежит:

A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission. 1. A plasma processing apparatus , comprising:a processing chamber which is disposed inside a vacuum vessel;a detector which is configured to detect a change in an intensity of light emission from plasma formed inside the processing chamber; andan adjusting unit which is configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, whereinthe detector detects a signal of the intensity of light emission at a plurality of time instants before an arbitrary time instant during processing, and whereinthe adjusting unit removes a component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects a component of a short temporal change of the intensity of light emission, and further adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.2. The plasma processing apparatus according to claim 1 , wherein the adjusting ...

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Номер записи: 53
17-01-2019 дата публикации

PLASMON-EXCITED ELECTRON BEAM ARRAY FOR COMPLEMENTARY PATTERNING

Номер: US20190019648A1
Автор: PAN Liang, Xu Xianfan
Принадлежит: PURDUE RESEARCH FOUNDATION

A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses. 1. A system comprising:a light source configured to provide a plurality of light beams;a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to produce a plurality of corresponding electron emissions onto a wafer substrate, wherein the plasmonic lenses are configured to receive light beams from the light source, and wherein an entirety of each plasmonic lens of the plurality of plasmonic lenses comprise a metal layer.2. The system of claim 1 , further comprising a plurality of electrostatic microlenses configured to focus the electron emissions into corresponding electron beams for focusing on the wafer substrate.3. The system of claim 1 , further comprising a light source modulator connected to the light source.4. The system of claim 1 , further comprising a digital micro mirror which captures light from the light source and projects the light beamlets on the plasmonic lenses.5. The system of claim 1 , further comprising a positioning platform claim 1 , the positioning platform connected between the first substrate and the wafer substrate claim 1 , the positioning device configured to move the wafer substrate in relation to the first substrate.6. The system of claim 5 , wherein the positioning platform is a spinning positioning system.7. The system of claim 5 , wherein the positioning platform is a linear translation positioning system.8. The system of claim 2 , wherein ...

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Номер записи: 54
17-01-2019 дата публикации

IMAGING SYSTEM AND IMAGING METHOD

Номер: US20190019651A1
Автор: MARUYAMA Kotaro
Принадлежит:

An imaging system having a scanning electron microscope capable of rapidly obtaining clear images of inspection targets at different heights is disclosed. The imaging system includes a computer having a memory storing design data including two-dimensional design information of each of layers of a three-dimensional multilayer structure constituting a surface of the specimen, the design data further including height information of each of the layers. The computer is configured to: read the two-dimensional design information and the height information from the memory; calculate a height of an image acquisition position on the specimen from the two-dimensional design information and the height information; and instruct the scanning electron microscope to focus the electron beam on the image acquisition position based on the calculated height of the image acquisition position. 1. An imaging system comprising:a scanning electron microscope configured to generate an image of a specimen by detecting secondary electrons and backscattered electrons emitted from the specimen while scanning the specimen with an electron beam;a computer having a memory storing design data including two-dimensional design information of each of layers of a three-dimensional multilayer structure constituting a surface of the specimen, the design data further including height information of each of the layers, the computer is configured to:read the two-dimensional design information and the height information from the memory;calculate a height of an image acquisition position on the specimen from the two-dimensional design information and the height information; andinstruct the scanning electron microscope to focus the electron beam on the image acquisition position based on the calculated height of the image acquisition position.2. The imaging system according to claim 1 , wherein the computer is configured to calculate a distribution of surface heights of the specimen from the two-dimensional ...

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Номер записи: 55
16-01-2020 дата публикации

Systems and methods for using multimodal imaging to determine structure and atomic composition of specimens

Номер: US20200020507A1
Автор: Peter V. Liddicoat
Принадлежит: Atomnaut Inc

An imaging system that selectively alternates between a first, non-destructive imaging mode and a second, destructive imaging mode to analyze a specimen so as to determine an atomic structure and composition of the specimen is provided. The field ionization mode can be used to acquire first images of ionized atoms of an imaging gas present in a chamber having the specimen disposed therein, and the field evaporation mode can be used to acquire second images of ionized specimen atoms evaporated from a surface of the specimen with the imaging gas remaining in the chamber. The first and second image data can be analyzed in real time, during the specimen analysis, and results can be used to dynamically adjust operating parameters of the imaging system.

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Номер записи: 56
28-01-2016 дата публикации

Ion Beam Sample Preparation and Coating Apparatus and Methods

Номер: US20160024645A1
Автор: John Andrew Hunt, Michael Patrick Hassel-Shearer, Steven Thomas Coyle, Thijs C. HOSMAN
Принадлежит: Gatan Inc

Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder.

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Номер записи: 57
16-01-2020 дата публикации

Method and apparatus for directing a neutral beam

Номер: US20200022247A1
Автор: Sean R. Kirkpatrick, Son T. CHAU
Принадлежит: Exogenesis Corp

The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.

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Номер записи: 58
26-01-2017 дата публикации

Electron Microscope

Номер: US20170025244A1
Автор: Yamazaki Kazuya
Принадлежит:

There is provided an electron microscope capable of easily achieving power saving. The electron microscope () includes a controller () for switching the mode of operation of the microscope from a first mode where electron lenses () are activated to a second mode where the electron lenses () are not activated. During this operation for making a switch from the first mode to the second mode, the controller () performs the steps of: closing a first vacuum gate valve (), opening a second vacuum gate valve (), and vacuum pumping the interior of the electron optical column () of the microscope by the second vacuum pumping unit (); then controlling a heating section () to heat an adsorptive member (); then opening the first vacuum gate valve (), closing the second vacuum gate valve (), and vacuum pumping the interior of the electron optical column () by the first vacuum pumping unit (); and turning off the electron lenses (). 1. An electron microscope comprising:an electron beam source;electron lenses disposed in an electron optical column;a cooling section disposed in the electron optical column and operative to cool an adsorptive member to thereby adsorb contaminant materials that contaminate a sample;a heating section for heating the adsorptive member;a detector disposed in a detection chamber and operative to detect an electron beam transmitted through the sample;a first vacuum pumping unit connected into the electron optical column via a first vacuum gate valve;a second vacuum pumping unit connected into the detection chamber and also connected into the electron optical column via a second vacuum gate valve, the second vacuum pumping unit being capable of operating at pressures higher than pressures at which the first vacuum pumping unit can operate; anda controller for performing an operation to switch the mode of operation of the electron microscope from a first mode where the electron lenses are excited to a second mode where the electron lenses are not excited; ...

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Номер записи: 59
25-01-2018 дата публикации

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Номер: US20180025890A1
Автор: ANWAR Suhail, CHOI Soo Young, HOU LI, Kim Ki Woon, KURITA Shinichi, PARK Beom Soo, TINER Robin L., WANG Qunhua, WHITE John M., WON Tae Kyung
Принадлежит:

Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support. 1. A method of depositing a thin film on a substrate , comprising:placing a substrate on a substrate support that is mounted in a processing region of a processing chamber;flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side; andcreating a plasma between the downstream side of the diffuser plate and the substrate support.2. The method of claim 1 , wherein each of the gas passages comprise a hollow cathode cavity in fluid communication with the downstream side.3. The method of claim 2 , wherein a volume claim 2 , a surface area claim 2 , or a density of each of the gas passages varies across the diffuser plate to obtain a desired thin film thickness and property uniformity.4. The method of claim 1 , wherein the diffuser plate is rectangular.5. The method of claim 1 , wherein the diffuser plate size is at least 1 claim 1 ,200 claim 1 ,000 mm.6. The method of claim 1 , wherein each of the gas passages comprise:an orifice hole having a first diameter; anda hollow cathode cavity that is downstream of and in fluid ...

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Номер записи: 60
25-01-2018 дата публикации

HOLLOW CATHODE PLASMA SOURCE

Номер: US20180025892A1
Автор: BIQUET Thomas, CHAMBERS John, MASCHWITZ Peter, WIAME Hughes
Принадлежит:

The present invention relates to a hollow cathode plasma source and to methods for surface treating or coating using such a plasma source, comprising first and second electrodes (), each electrode comprising an elongated cavity (), wherein dimensions for at least one of the following parameters is selected so as to ensure high electron density and/or low amount of sputtering of plasma source cavity surfaces, those parameters being cavity cross section shape, cavity cross section area cavity distance (), and outlet nozzle width (). 1. A hollow cathode plasma source comprising a first electrode and a second electrode each electrode comprising an elongated cavity ,wherein the cathodes extend substantially parallel to each otherwherein the first and second electrodes are both provided with a gas inlet for the plasma forming gas and with a gas outlet which leads to an outlet nozzle which is directed towards a substrate "wherein at least one of the following parameter's dimension is selected", 'wherein first and second electrodes are electrically connected to a power source supplying the electrodes with alternatingly opposing voltages'}i. the cavity cross section is of rectangular, rounded rectangular or circular shape or of a shape intermediary of these shapes,{'sup': 2', '2, 'claim-text': iii. the cavity distance is comprised between 85 mm and 160 mm,', 'iv. the outlet nozzle width is comprised between 1 mm and 25 mm., 'ii. the cavity cross section area is comprised between 500 mmand 4000 mm,'}2. The hollow cathode plasma source according to claim 1 , wherein at least two of the parameter's dimensions i. to iv. are selected.3. The hollow cathode plasma source according to claim 1 , wherein all of the parameter's dimensions i. to iv. are selected.4. The hollow cathode plasma source according to claim 1 , wherein the cavity cross section shape is circular.5. The hollow cathode plasma source according to claim 1 , wherein the cavity cross section area is comprised between ...

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Номер записи: 61
04-02-2016 дата публикации

Deposition Tool for Combinatorial Thin Film Material Libraries

Номер: US20160030909A1
Автор: DEDUYTSCHE Davy, DETAVERNIER Christophe
Принадлежит: Universiteit Gent

A system for combinatorial deposition of a thin layer on a substrate is described. The system comprises at least one deposition material source holder and a substrate holder. The system also comprises a rotatable positioning system for subsequently positioning the at least one substrate in parallel and in non-parallel configuration with at least one deposition material source. The system comprises at least one mask holder arranged for positioning a mask between at least one of the target holder and the positioning system, for allowing variation of the material flux across the at least one substrate when the combinatorial deposition is performed. The mask holder is in a fixed arrangement with respect to the at least one deposition material source holder during the combinatorial depositing. 116-. (canceled)17. A system for combinatorial depositing of a thin film having a varying composition and/or a varying thickness on at least one substrate , the system comprisingat least one deposition material source holder arranged so as to carry a deposition material source,a substrate holder adapted for carrying at least one substrate,a rotatable positioning system having a rotation axis for relatively moving the substrate holder and the at least one deposition material source holder with respect to each other for subsequently positioning the at least one substrate in a parallel configuration in front of at least one of the at least one deposition material source and in a non-parallel configuration non parallel with the at least one of the at least one deposition material source during the combinatorial deposition, andat least one mask holder arranged for positioning a mask between at least one of the at least one deposition material source holder and the substrate holder, for allowing variation of the material flux across the at least one substrate when the combinatorial deposition is performed, and the at least one mask holder being in a fixed arrangement with respect to the ...

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Номер записи: 62
23-01-2020 дата публикации

TOMOGRAPHY-ASSISTED TEM PREP WITH REQUESTED INTERVENTION AUTOMATION WORKFLOW

Номер: US20200027692A1
Автор: Alvis Roger Louis, Clark Greg, Landin Trevan R.
Принадлежит: FEI COMPANY

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed. 1. A method comprising:milling a layer of material from one major lateral side of a workpiece, the workpiece including two major lateral sides;acquiring an image at each tilt orientation of a small-angle tilt series, the small-angle tilt series including a plurality of tilt orientations;identifying one or more features in each of the images;applying metrology to determine respective depths of the one or more features from at least one of the major lateral sides;requesting an operator intervention in the process by (I) displaying prepared images with measured depths displayed and identified, (II) displaying measured thickness of the workpiece lamella, and (III) presenting a limited choice intervention menu with a first option to mill away a layer on the same major lateral side of the workpiece previously milled and a second option to flip the workpiece and then mill away a layer on the opposing major lateral side of the workpiece;receiving an operator choice through the limited choice intervention menu; andbased on the operator choice, either flipping the lamella or presenting the previously milled major lateral side of the workpiece lamella toward the ion beam, milling a layer of material from the presented side of the workpiece.2. The method of claim 1 , wherein the small-angle tilt series includes no more than two projections.3. The method of claim 1 , wherein the images are STEM projections.4. The method of claim 3 , wherein identifying one or more features in each of the images includes:aligning the STEM projections; anddetermining ...

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Номер записи: 63
23-01-2020 дата публикации

SYSTEM AND METHOD FOR BARE WAFER INSPECTION

Номер: US20200027693A1
Автор: Fang Wei, Wang Joe
Принадлежит:

A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates. 1. A defect review tool comprising: acquire, via an optical imaging tool, coordinates of defects on a bare wafer;', 'set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects on the bare wafer;', 'determine a position on the hare wafer of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scan of the bare wafer;', 'adjust the coordinates of the defects based on the determined positions of the subset of the defects; and', 'set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates., 'a controller in communication with an electron-beam inspection tool, the controller having circuitry to2. The defect review tool of claim 1 , wherein the first size is larger than the second size.3. The defect review tool of claim 1 , wherein the bare wafer is an un-patterned wafer.4. The defect review tool of claim 1 , wherein the controller having circuitry to adjust the coordinates of the defects based on the determined positions of the subset of the defects includes the controller having circuitry to:determine a transformation relationship for the coordinates of he ...

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Номер записи: 64
23-01-2020 дата публикации

METHOD AND APPARATUS FOR CHARGED PARTICLE DETECTION

Номер: US20200027694A1
Автор: Chen Zhongwei, DONG Zhonghua, REN Weiming, Wang Yongxin
Принадлежит:

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value. 1. A detection system comprising:a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements; and determine, based on the set of intensity gradients, at least one boundary of a beam spot; and', 'determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot., 'a beam spot processing module configured to2. A detection system comprising: acquire a set of intensity signals from a plurality of electron sensing elements;', 'determine, based on the set of intensity signals, at least one boundary of a beam spot; and', 'determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot., 'a beam spot processing module configured to3. The detection system of claim 1 , wherein the beam spot processing module is further configured to:determine an intensity value of the beam spot based on electron intensity data ...

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Номер записи: 65
23-01-2020 дата публикации

METHOD FOR OPERATING A PLURALITY OF FIB-SEM SYSTEMS

Номер: US20200027696A1
Автор: Biberger Josef, Pulwey Ralph
Принадлежит:

Processes may be performed with a plurality of FIB-SEM systems. A first process group includes recording an image with the electron beam column, depositing material with supply of a process gas, and performing ion beam etching. A second process group includes performing a sample exchange, exchanging a reservoir of a gas source for the process gas, and verifying an image that was recorded with the electron beam column. The processes of the second group are prioritized. The FIB-SEM systems are actuated to work through processes contained in process lists. If in a plurality of FIB-SEM systems processes of the second group are to be performed simultaneously, an instruction based on the prioritization is output to the user. 1. A method for operating a plurality of FIB-SEM systems , wherein each of the FIB-SEM systems comprises an electron beam column for directing an electron beam onto a work region and an ion beam column for directing an ion beam onto the work region;wherein each of the FIB-SEM systems is configured such that they can be used to perform at least a plurality of predefined processes, wherein the plurality of predefined processes comprises at least one first group of processes that the FIB-SEM system can perform automatically without the assistance of the user and comprises a second group of processes that the FIB-SEM system must perform with the assistance of the user,wherein the first group of processes comprises at leastrecording an image with the electron beam column,depositing material with supply of a process gas, andperforming ion beam etching, performing a sample exchange,', 'exchanging a reservoir of a gas source for the process gas, and', 'verifying an image that was recorded with the electron beam column,, 'and the second group of processes comprises at least'}wherein the method comprises:prioritizing the processes of the second group;maintaining a process list for each of the FIB-SEM systems, wherein each process list contains a plurality of ...

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Номер записи: 66
28-01-2021 дата публикации

Scanning electron microscopy system and pattern depth measurement method

Номер: US20210027983A1
Автор: Akira Hamaguchi, Mayuka Osaki, Takahiro Nishihata, Takuma Yamamoto, Yusuke Iida
Принадлежит: Hitachi High Tech Corp

A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

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Номер записи: 67
28-01-2021 дата публикации

SHUTTER MECHANISM AND SUBSTRATE PROCESSING APPARATUS

Номер: US20210027994A1
Автор: MOTEGI Suguru, SASAKI Nobutaka
Принадлежит: TOKYO ELECTRON LIMITED

A shutter mechanism for opening and closing an opening of a cylindrical chamber of a substrate processing apparatus is provided. The shutter mechanism includes a valve body having a circumferential length of at least half of an inner circumference of the chamber, and two or more elevating mechanisms connected to a lower portion of the valve body and configured to vertically move the valve body. 1. A shutter mechanism for opening and closing an opening of a cylindrical chamber of a substrate processing apparatus , the shutter mechanism comprising:a valve body having a circumferential length of at least half of an inner circumference of the chamber; andtwo or more elevating mechanisms connected to a lower portion of the valve body and configured to vertically move the valve body.2. The shutter mechanism of claim 1 , wherein the valve body has an annular shape.3. The shutter mechanism of claim 1 , wherein the two or more elevating mechanisms include three or more elevating mechanisms.4. The shutter mechanism of claim 2 , wherein the two or more elevating mechanisms include three or more elevating mechanisms.5. The shutter mechanism of claim 1 , wherein the elevating mechanisms are arranged at equal intervals.6. The shutter mechanism of claim 2 , wherein the elevating mechanisms are arranged at equal intervals.7. The shutter mechanism of claim 3 , wherein the elevating mechanisms are arranged at equal intervals.8. The shutter mechanism of claim 1 , wherein the valve body has a conductive member on a conductive surface thereof to be in contact with an upper member disposed along an upper inner wall of the chamber.9. The shutter mechanism of claim 2 , wherein the valve body has a conductive member on a conductive surface thereof to be in contact with an upper member disposed along an upper inner wall of the chamber.10. The shutter mechanism of claim 3 , wherein the valve body has a conductive member on a conductive surface thereof to be in contact with an upper member ...

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Номер записи: 68
01-05-2014 дата публикации

Automated Mineral Classification

Номер: US20140117231A1
Автор: Michael Buhot, Michael James Owen
Принадлежит: FEI Co

The present invention discloses a combination of two existing approaches for mineral analysis and makes use of the Similarity Metric Invention, that allows mineral definitions to be described in theoretical compositional terms, meaning that users are not required to find examples of each mineral, or adjust rules. This system allows untrained operators to use it, as opposed to previous systems, which required extensive training and expertise.

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Номер записи: 69
17-02-2022 дата публикации

PATTERN FORMATION METHOD AND TEMPLATE MANUFACTURING METHOD

Номер: US20220051871A1
Автор: SEKI Ryota
Принадлежит:

According to one embodiment, a pattern formation method includes placing an imprint resist film on a substrate, then imprinting a pattern in the imprint resist film. The pattern has a first loop section in a first end portion and a second loop section in a second end portion. After the imprint resist film has been patterned, it is selectively irradiated between the first loop section and the second loop section. The imprint resist film is then etched under conditions leaving the selectively irradiated portion of the imprint resist film and removing the unirradiated portion of the imprint resist film. 1. A pattern formation method , comprising:placing an imprint resist film on a substrate;imprinting a pattern in the imprint resist film, the pattern having a first loop section in a first end portion and a second loop section in a second end portion;selectively irradiating the patterned imprint resist film between the first loop section and the second loop section; andetching the imprint resist film under conditions leaving the selectively irradiated portion of the imprint resist film and removing the unirradiated portion of the imprint resist film.2. The pattern formation method according to claim 1 , wherein the selective irradiation is performed with an electron beam.3. The pattern formation method according to claim 1 , wherein a region of the imprint resist film corresponding to an alignment mark is also selectively irradiating before the etching.4. The pattern formation method according to claim 1 , wherein the pattern is formed on an imprint template by a side wall transfer process.5. The pattern formation method according to claim 1 , wherein the substrate is quartz.6. The pattern formation method according to claim 1 , wherein the substrate is an imprint template including a mesa structure.7. The pattern formation method according to claim 1 , further comprising:after the etching of the imprint resist film, etching a hard mask layer on the substrate using the ...

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Номер записи: 70
31-01-2019 дата публикации

NANO VACUUM TUBE

Номер: US20190035598A1
Автор: CHANG Hsien-Yu, LU Nai-Cheng
Принадлежит:

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure. 1. A semiconductor device , comprising:a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another;a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; andat least one photodetector formed within a bottom portion of the tube-like structure.2. The device of claim 1 , wherein the photodetector includes a p-n junction diode.3. The device of claim 1 , wherein the at least one photodetector comprises at least four photodetectors each formed within the bottom portion of the tube-like structure.4. The device of claim 3 , wherein the at least four photodetectors are formed as a ring-like structure.5. The device of claim 1 , wherein the photodetector includes a semiconductor layer that is either p-type doped or n-type doped claim 1 , and the semiconductor layer has an exposed surface.6. The device of claim 5 , wherein the exposed surface of the semiconductor layer is substantially coplanar with a bottom surface of the tube-like structure.7. The device of claim 1 , wherein the cap conductor layer is formed of tungsten and the plurality of conductor layers are formed of copper.8. A method of forming a semiconductor device claim 1 , comprising:providing a substrate overlaid by a first sacrificial layer;forming one or more photodetectors in a bottom dielectric layer that is disposed over the first sacrificial layer; ...

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Номер записи: 71
31-01-2019 дата публикации

System and Method for Performing Nano Beam Diffraction Analysis

Номер: US20190035599A1
Автор: BERGENDAHL Marc Adam, Demarest James John, Penny Christopher J., Quon Roger Allen, Waskiewicz Christopher Joseph
Принадлежит:

A system for performing diffraction analysis, includes a mill for removing a surface portion of a sample, and an analyzer for performing diffraction analysis on the milled sample. 1. A system for performing diffraction analysis , comprising:a mill for removing a surface portion of a sample; andan analyzer for performing diffraction analysis on the milled sample.2. The system of claim 1 , further comprising:a focused ion beam (FIB) device for preparing the sample, the mill removing a surface portion of the prepared sample.3. The system of claim 2 , wherein the diffraction analysis comprises nano beam diffraction (NBD) analysis claim 2 , the sample comprises a transmission electron microscopy (TEM) sample claim 2 , the mill comprises a broad beam ion mill for milling the prepared sample claim 2 , and the analyzer comprises a strain analyzer.4. The system of claim 3 , wherein the analyzer performs the NBD analysis on the milled sample to acquire diffraction data.5. The system of claim 4 , wherein the milling of the TEM sample exposes an underlying surface of the TEM sample claim 4 , and the strain analyzer uses a TEM camera image resolution of at least 4000×4000 pixels to acquire the diffraction data on the underlying surface.6. The system of claim 4 , wherein the surface portion removed by the broad beam ion mill comprises a portion of the surface of the TEM sample which has been damaged by the FIB device.7. The system of claim 4 , wherein the TEM sample comprises a parallel-sided sample claim 4 , and the broad beam ion mill removes a surface portion from two parallel sides of the parallel-sided sample.8. The system of claim 4 , wherein the surface portion comprises a thickness in a range from 1 nm to 45 nm.9. The system of claim 4 , wherein the surface portion comprises at least 10% of a thickness of the TEM sample claim 4 , andwherein the diffraction data comprises a sensitivity which is less than 0.1%.10. The system of claim 4 , wherein the structure comprises one ...

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Номер записи: 72
31-01-2019 дата публикации

METHODS AND DEVICES FOR EXAMINING AN ELECTRICALLY CHARGED SPECIMEN SURFACE

Номер: US20190035601A1
Автор: Boese Markus, Budach Michael, SCHINDLER Bernd, Schnell Michael
Принадлежит:

A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface. 1. (canceled)2. A method for examining a specimen surface with a charged particle beam of a scanning particle microscope , the specimen surface having an electrical potential distribution of an electrostatic charge , the method comprising the steps of:a. determining the electrical potential distribution of the electrostatic charge of at least one first partial region of the specimen surface;b. correcting at least one setting of the scanning particle microscope on the basis of the potential distribution of the electrostatic charge determined in step a. to process at least one second partial region of the specimen surface with the charged particle beam; and/orc. scanning at least one first partial region of the specimen surface with the charged particle beam of the scanning particle microscope; andd. correcting by use of the potential distribution of the electrostatic charge determined in step a. an image of the scanning particle micro-scope generated from the scanning data of the at least one second partial region, the correction of an image of the scanning particle micro-scope generated from the scanning data comprising correcting a critical dimension and/or a positioning error of a structural element of a photomask, a structural element of a photoresist arranged on a wafer and/or a structural element of a component on a wafer.3. The method according to claim 2 , also comprising the step of: determining ...

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Номер записи: 73
31-01-2019 дата публикации

ION BEAM ETCHING APPARATUS

Номер: US20190035610A1
Автор: JI You Jin, KIM Doo San, KIM Ki Hyun, KIM Ki Seok, LEE Won Oh, MUN Mu Kyeom, OH Ji Soo, OH Jong Sik, Park Jin Woo, SUNG Da In, YANG Kyung Chae, YEOM Geun Young
Принадлежит: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively. 1. An ion-beam etching apparatus , comprising:a plasma chamber configured to generate plasma from process gas in the plasma chamber;at least one plasma valve coupled to the plasma chamber;an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source;an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched;at least one etching valve coupled to the etching chamber; andat least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.2. The apparatus of claim 1 , wherein the at least one exhausting pump is connected to the plasma chamber and ...

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Номер записи: 74
30-01-2020 дата публикации

Vacuum condition processing apparatus, system and method for specimen observation

Номер: US20200035443A1
Автор: PENG Wang, Shuai Li, Wei He
Принадлежит: Focus eBeam Technology Beijing Co Ltd

A vacuum condition processing apparatus is provided, the top of which is connected to an external charged particle beam generating device, and the apparatus includes: a suction cup in contact with the specimen to be observed or the stage holding the specimen, a first gas controlling device connected to an external gas supplying system, and a second gas controlling device connected to an external pumping system; a window is deployed at the top of the apparatus, through which the particle beam can go into the apparatus; the first gas controlling device is arranged to connect the gas supplying system and the suction cup; the second gas controlling device is arranged to connect the gas pumping system and the suction cup. Also disclosed is a specimen observation system and method.

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Номер записи: 75
30-01-2020 дата публикации

Remote Capacitively Coupled Plasma Source With Improved Ion Blocker

Номер: US20200035467A1
Автор: Balasubramanian Ganesh, Hassan Vinayak Vishwanath, Kumar Bhaskar, Shah Vivek B.
Принадлежит:

Apparatus and methods for generating a flow of radicals are provided. An ion blocker is positioned a distance from a faceplate of a remote plasma source. The ion blocker has openings to allow the plasma to flow through. The ion blocker is polarized relative to a showerhead positioned on an opposite side of the ion blocker so that there are substantially no plasma gas ions passing through the showerhead. 1. A gas distribution apparatus comprising:a remote plasma source having a faceplate;an ion blocker having a back surface facing the faceplate and a front surface defining a thickness, the back surface of the ion blocker spaced a distance from the faceplate to form a gap, the ion blocker comprising a plurality of openings extending through the thickness;a showerhead having a back surface and a front surface, the back surface of the showerhead facing and spaced from the front surface of the ion blocker, the showerhead comprising a plurality of apertures to allow radicals from the remote plasma source to flow through the showerhead; anda voltage regulator connected to the ion blocker and the showerhead to polarize the ion blocker relative to the showerhead.2. The gas distribution apparatus of claim 1 , wherein the ion blocker is polarized relative to the showerhead so that there are substantially no plasma gas ions passing through the showerhead.3. The gas distribution apparatus of claim 1 , wherein the showerhead is a dual channel showerhead having a first gas channel and a second gas channel.4. The gas distribution apparatus of claim 3 , wherein the first gas channel of the dual channel showerhead is in fluid communication with the gap between the ion blocker and the faceplate so that the plurality of apertures in the showerhead comprises a first plurality of apertures that extend from the front surface to the back surface of the showerhead.5. The gas distribution apparatus of claim 4 , wherein the second gas channel of the dual channel showerhead is in fluid ...

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Номер записи: 76
12-02-2015 дата публикации

Material inspection apparatus

Номер: US20150041652A1
Автор: Haruko Akutsu
Принадлежит: Toshiba Corp

A material inspection apparatus according to the present embodiment includes a sample mount capable of mounting a sample. A detector detects an ion desorbed from the sample. A voltage generator applies a voltage to the sample. An optical system irradiates a laser beam onto the sample at a tilt angle with respect to a perpendicular direction to an end surface of a tip end of the sample. The tilt angle is equal to or smaller than a Brewster angle.

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Номер записи: 77
12-02-2015 дата публикации

CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD

Номер: US20150041684A1
Автор: KATO Yasuo, MATSUMOTO Hiroshi
Принадлежит: NuFlare Technology, Inc.

A charged particle beam writing apparatus includes an area density calculation unit to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included, a fogging correction dose coefficient calculation unit to calculate a fogging correction dose coefficient for correcting a dimension variation due to a fogging effect by using the pattern area density weighted using the dose modulation value having been input from the outside, a dose calculation unit to calculates a dose of a charged particle beam by using the fogging correction dose coefficient and the dose modulation value, and a writing unit to write a pattern on a target object with the charged particle beam of the dose. 1. A charged particle beam writing apparatus comprising:an area density calculation unit configured to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included;a fogging correction dose coefficient calculation unit configured to calculate a fogging correction dose coefficient for correcting a dimension variation due to a fogging effect by using the pattern area density weighted using the dose modulation value having been input from the outside;a dose calculation unit configured to calculates a dose of a charged particle beam by using the fogging correction dose coefficient and the dose modulation value; anda writing unit configured to write a pattern on a target object with the charged particle beam of the dose.2. The apparatus according to claim 1 , wherein the dose modulation value is defined for each figure pattern.3. The apparatus according to claim 1 , wherein the area density calculation unit calculates the pattern area density having been weighted claim 1 , for ...

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Номер записи: 78
09-02-2017 дата публикации

Range-Based Real-Time Scanning Electron Microscope Non-Visual Binner

Номер: US20170040142A1
Автор: JAIN Arpit, Kumar Roy Hemanta, Lobo Arun, Moreau Olivier, Yati Arpit
Принадлежит:

A technique to identify non-visual defects, such as SEM non-visual defects (SNVs), includes generating an image of a layer of a wafer, evaluating at least one attribute of the image using a classifier, and identifying the non-visual defects on the layer of the wafer. A controller can be configured to identify the non-visual defects using the classifier. This controller can communicate with a defect review tool, such as a scanning electron microscope (SEM). 1. A system comprising:a defect review tool, wherein the defect review tool has a stage configured to clamp a wafer; anda controller configured to communicate with the defect review tool, wherein the controller is configured to identify a non-visual defect on a layer of the wafer using a classifier.2. The system of claim 1 , wherein the controller comprises a processor configured to communicate with the defect review tool claim 1 , a storage device in electronic communication with the processor containing the classifier claim 1 , and a communication port in electronic communication with the processor for communicating with the defect review tool.3. The system of claim 1 , wherein the controller identifies a non-visual defect by using the classifier to filter at least one of topographical defects claim 1 , intensity attributes claim 1 , or energy attributes.4. The system of claim 1 , wherein the defect review tool is a scanning electron microscope (SEM).5. The system of claim 1 , wherein the non-visual defect is an SEM non-visual defect (SNV).6. A method comprising:generating, using a defect review tool, an image of a layer on a wafer;evaluating, using a processor, at least one attribute of the image using a classifier; andidentifying, using the processor, a non-visual defect on the layer of the wafer using the classifier.7. The method of claim 6 , further comprising defining claim 6 , using the processor claim 6 , an upper limit and lower limit for non-visual defects claim 6 , wherein the non-visual defect that is ...

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Номер записи: 79
09-02-2017 дата публикации

ROLL-TO-ROLL HYBRID PLASMA MODULAR COATING SYSTEM

Номер: US20170040150A1
Автор: Ai Chi-Fong, Chen Jiun-Shen, Hsieh Cheng-Chang, Lin Deng-Lain, Tsai Wen-Fa, Tseng Ching-Pei
Принадлежит:

The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material. 1. A roll-to-roll hybrid plasma modular coating system , comprising:at least one arc plasma processing unit, each formed with a first chamber and an arc plasma source for producing arc plasma that is housed inside the first chamber;at least one magnetron sputtering plasma processing unit, each formed with a second chamber and a magnetron sputtering plasma source for producing magnetron sputtering plasma that is housed inside the second chamber;a metallic film, disposed in the arc plasma processing unit to avoid deposition of target material on a wall in the deposition chamber; andat least one substrate feeding unit, for feeding a substrate, formed with a third chamber;whereas the at least one arc plasma processing unit, the at least one magnetron sputtering plasma processing unit and the at least one substrate feeding unit are connected in series to be used for depositing at least one thin layer by arc plasma deposition or at least one thin layer by magnetron sputtering plasma on a web substrate during the feeding of the web substrate.2. The roll-to-roll hybrid plasma modular ...

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Номер записи: 80
24-02-2022 дата публикации

Multiple electron beam writing apparatus and multiple electron beam writing method

Номер: US20220059310A1
Автор: Kota Iwasaki, Taku Yamada
Принадлежит: Nuflare Technology Inc

A multiple electron beam writing apparatus includes an excitation light source to emit an excitation light, a multi-lens array to divide the excitation light into a plurality of lights, a photoemissive surface to receive the plurality of lights incident through its upper side, and emit multiple photoelectron beams from its back side, a blanking aperture array mechanism to provide, by deflecting each beam of the multiple photoelectron beams, an individual blanking control which individually switches each beam between ON and OFF, an electron optical system to include an electron lens, and to irradiate, using the electron lens, a target object with the multiple photoelectron beams having been controlled to be beam ON, and a control circuit to interconnect, for each shot of the multiple photoelectron beams, a timing of switching the excitation light between emission and non-emission with a timing of switching the each beam between ON and OFF.

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Номер записи: 81
24-02-2022 дата публикации

PRINTED CIRCUIT BOARD FOR SEALING VACUUM SYSTEM

Номер: US20220059311A1
Автор: Bex Jan, Brookhuis Robert Anton, CORNELISSEN Lidewij Elisa, HENDRIX Ronny, LAI Rui-Ling, STEPANENKO Nickolay, Wang Yongxin
Принадлежит:

Detector modules, systems and methods for detecting signal beams are disclosed using a detector module and a support comprising a feedthrough. 1. A system for sealing a vacuum system configured to provide an atmospheric environment and a vacuum chamber environment , the system comprising:{'claim-text': ['a first side for exposing to the atmospheric environment, and', 'a second side for exposing to the vacuum chamber environment and for covering an aperture in the vacuum chamber environment, wherein the second side is opposite to the first side;'], '#text': 'a printed circuit board (PCB) comprising:'}a rigid body on the first side of the PCB;a device connected to the second side of the PCB and positioned on a portion of the PCB that covers the aperture; andwherein the PCB is configured to provide an interface between the device and the rigid body.2. The system of claim 1 , wherein the PCB comprises SiN or alumina.3. The system of claim 1 , wherein the PCB comprises a plurality of layers.4. The system of claim 3 , wherein each layer comprises at least one of a via or a trace.5. The system of claim 4 , wherein the via does not extend through an entire length of the PCB.6. The system of claim 1 , wherein the PCB comprises a material configured to reduce a thermal resistance between the device and the PCB.7. The system of claim 1 , wherein the PCB comprises a material having a coefficient of thermal expansion that is substantially similar to a coefficient of thermal expansion of the device.8. The system of claim 1 , wherein the interface is configured to provide a thermal connection between the rigid body and the device.9. The system of claim 1 , wherein the rigid body is further configured to provide mechanical support to the PCB.10. The system of claim 1 , wherein the PCB provides a hermetic seal to the vacuum chamber environment.11. The system of claim 1 , wherein the rigid body comprises a cooling system.12. The system of claim 1 , further comprising a flexure for ...

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Номер записи: 82
19-02-2015 дата публикации

SEALING GROOVE METHODS FOR SEMICONDUCTOR EQUIPMENT

Номер: US20150047786A1
Автор: Liang Qiwei, LUBOMIRSKY DMITRY
Принадлежит:

In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes a first portion having a full dovetail profile and at least on a second portion having a half dovetail profile. 1. A surface having a sealing groove , comprising: 'a first portion having a full dovetail profile and at least on a second portion having a half dovetail non-continuous profile.', 'a surface having a sealing groove formed therein, the sealing groove configured to accept an elastomeric seal, the sealing groove comprising2. The surface of claim 1 , wherein the full dovetail profile forms tabs extending radially inward from an outer wall of the sealing groove.3. The surface of claim 1 , wherein the full dovetail profile forms tabs extending radially outward from an inner wall of the sealing groove.4. The surface of claim 1 , wherein the full dovetail profile forms tabs extending radially outward from an inner wall of the sealing groove and radially inward from an outer wall of the sealing groove.5. The surface of claim 1 , wherein a wall of the dovetails is at a 60 degree angle from a bottom surface of the dovetails.6. The surface of claim 1 , wherein a narrow portion of the full dovetail profile has an opening of 4.58 mm and a narrow portion of the half dovetail non-continuous profile has an opening of 5.71 mm.7. The surface of claim 2 , wherein the tabs are along the outer wall of the sealing groove at 12 equally spaced locations.8. The surface of claim 2 , wherein a transition in the outer wall to and from the tabs has a radius of 1 mm.9. A vacuum processing chamber claim 2 , comprising:a chamber body includes a bottom, and side walls, a lid assembly moveable between an open and a closed position; and 'a first portion having a full dovetail profile and at least on a second portion having a half dovetail profile.', 'a sealing groove formed on a surface in one of the lid assembly and the chamber ...

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Номер записи: 83
19-02-2015 дата публикации

SCANNING ION MICROSCOPE AND SECONDARY PARTICLE CONTROL METHOD

Номер: US20150048247A1
Автор: Kawanami Yoshimi, Ose Yoichi
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image. 1. A scanning ion microscope comprising:an ion source;a specimen stage configured to hold a specimen;an ion optical system configured to cause ions emitted from the ion source converge on the specimen and make deflection of the converged ions to a given position on the specimen;an ion controller configured to control the ion optical system;a secondary particle detector configured to detect a secondary particle emitted from the specimen; andan image processing unit configured to form an image in which by a signal from the secondary particle detector corresponds to the deflection of the converged ions, and store the image in a storage unit and displays the image on a display unit; wherein the scanning ion microscope further comprises:a support member, which is electrically-conductive, configured to support a thin film which is irradiated with the ions, is disposed between the ion optical system and the specimen; anda potential control unit configured to control a first electric potential, which is an electric potential of the support member.2. The scanning ion microscope according to claim 1 , further comprising an electrode potential control unit configured to control a second electric potential claim 1 , which is an electric potential of an electrode that is disposed between the thin film and the specimen claim 1 , the electrode ...

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Номер записи: 84
19-02-2015 дата публикации

DETECTING ARCING USING PROCESSING CHAMBER DATA

Номер: US20150048862A1
Автор: CHEN Chunsheng, ILIOPOULOS Ilias, Na Shuo, YANCY Kelby
Принадлежит:

A method and apparatus for detecting substrate arcing and breakage within a processing chamber is provided. A controller monitors chamber data, e.g., parameters such as RF signals, voltages, and other electrical parameters, during operation of the processing chamber, and analyzes the chamber data for abnormal spikes and trends. Using such data mining and analysis, the controller can detect broken substrates without relying on glass presence sensors on robots, but rather based on the chamber data. 1. A method for operating a processing chamber , the method comprising:generating a threshold value associated with a first chamber parameter according to historical chamber data obtained during processing of prior substrates in the processing chamber;receiving the first chamber parameter during processing of a first substrate according to a stage of a recipe; anddetermining at least one of a breakage exists in the first substrate or arcing has occurred in the processing chamber while processing the first substrate in response to determining the first chamber parameter exceeds the threshold value.2. The method of claim 1 , further comprising:generating a time-weighted average of the historical chamber data for the first chamber parameter, wherein the threshold value associated with the first chamber parameter comprises an amount of deviation from the time-weighted average.3. The method of claim 1 , further comprising:responsive to determining the first chamber parameter exceeds the threshold value, halting operations of the processing chamber and one or more tools operatively connected to the processing chamber.4. The method of claim 1 , further comprising:responsive to determining the first chamber parameter exceeds the threshold value, halting operations of the processing chamber only.5. The method of claim 1 , further comprising:responsive to determining the first chamber parameter exceeds the threshold value, transmitting an alert to a user.6. The method of claim 1 , ...

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Номер записи: 85
07-02-2019 дата публикации

CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD, AND PATTERN FORMING METHOD

Номер: US20190043692A1
Автор: Ito Rumi
Принадлежит: NuFlare Technology, Inc.

In one embodiment, a charged particle beam writing apparatus includes an estimator calculating an estimated value of a process parameter of a processing device at a scheduled timing at which a substrate as an object of pattern correction is processed in the processing device from a history of the process parameter of the processing device which performs a process after pattern writing, a predictor predicting dimension distribution of a pattern formed on the substrate by the processing device performing the process with the estimated value, a corrector correcting a design dimension based on the predicted dimension distribution, and a writer irradiating the substrate with a charged particle beam and writing the pattern based on the dimension corrected by the corrector. 1. A charged particle beam writing apparatus comprising:an estimator calculating an estimated value of a process parameter of a processing device at a scheduled timing at which a substrate as an object of pattern correction is processed in the processing device from a history of the process parameter of the processing device which performs a process after pattern writing;a predictor predicting dimension distribution of a pattern formed on the substrate by the processing device performing the process with the estimated value;a corrector correcting a design dimension based on the predicted dimension distribution; anda writer irradiating the substrate with a charged particle beam and writing the pattern based on the dimension corrected by the corrector.2. The apparatus according to claim 1 , further comprising a determinator comparing an actual process parameter in the processing device processing the substrate where the pattern is written at the scheduled timing and the estimated value claim 1 , and determining whether a dimensional variation caused by the processing device is occurred in the pattern on the substrate processed in the processing device based on a result of the comparison.3. The apparatus ...

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Номер записи: 86
06-02-2020 дата публикации

Normal-incident in-situ process monitor sensor

Номер: US20200043710A1
Автор: Ching Ling Meng, Hanyou Chu, Holger Tuitje, Qiang Zhao, Xinkang Tian
Принадлежит: Tokyo Electron Ltd

An apparatus, a system, and a method for in-situ etching monitoring in a plasma processing chamber are provided. The apparatus includes a continuous wave broadband light source to generate incident light beam, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector, and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property of the substrate or structures formed thereupon based on reference light beam and the reflected light beam that are processed to suppress the background light, and control an etch process based on the determined property.

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Номер записи: 87
26-02-2015 дата публикации

Pattern formation method, mask for pattern formation, method for manufacturing mask, and pattern formation apparatus

Номер: US20150053867A1
Автор: Ryoichi Inanami, Shinichi Ito, Takashi Sato
Принадлежит: Toshiba Corp

According to one embodiment, a pattern formation method includes: preparing a mask pattern for interference, a photoelectric conversion unit, and a processing object, the mask pattern for interference being periodically arranged a plurality of light transmissive portions, the photoelectric conversion unit being disposed apart from the mask pattern for interference; applying light to the mask pattern for interference to produce Talbot interference based on transmitted light of the light transmitted through the light transmissive portions; applying interference light produced by the Talbot interference to the photoelectric conversion unit to cause the photoelectric conversion unit to emit electrons based on the interference light; and forming a pattern by applying the electrons to the processing object.

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Номер записи: 88
14-02-2019 дата публикации

PLASMA TREATMENT DEVICE AND STRUCTURE OF REACTION VESSEL FOR PLASMA TREATMENT

Номер: US20190048468A1
Автор: MINOWA Hiroyuki, SHEK Lung Kei Amos, Yoshimura Toshiaki
Принадлежит:

The present invention improves the in-plane uniformity of film formation via a plasma treatment. It is provided a plasma treatment device constituted so that process gas introduced between an electrode plate and a shower plate is exhausted toward a counter electrode through a plurality of small holes formed in the shower plate, the plasma treatment device comprising a diffuser plate having a plurality of small holes, the diffuser plate being arranged substantially parallel with the shower plate, wherein the process gas is introduced between the electrode plate and the diffuser plate, passes through the plural small holes of the diffuser plate, reaches the shower plate and flows out from the plural small holes of the shower plate toward the electrode plate, and wherein within the small holes formed in the diffuser plate and the small holes formed in the shower plate, the small holes formed in a plate which exists more downstream along a flowing direction of the process gas are made in smaller diameters and an aperture ratio of each plate is made smaller in a plate which exists more upstream along the flowing direction of the process gas. 1. A plasma treatment device with an electrode plate having a main electrode plate , a diffuser plate and a shower plate , the plasma treatment device being constituted so that process gas introduced between the main electrode plate and the shower plate is exhausted toward a counter electrode through a plurality of first small holes formed in the shower plate ,the plasma treatment device comprising the diffuser plate having a plurality of second small holes, the diffuser plate being arranged substantially parallel with the shower plate,wherein the process gas is introduced between the main electrode plate and the diffuser plate, passes through the second plural small holes of the diffuser plate, reaches the shower plate and flows out from the first plural small holes of the shower plate toward the electrode plate, andwherein within ...

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Номер записи: 89
03-03-2022 дата публикации

APPARATUS FOR MULTIPLE CHARGED-PARTICLE BEAMS

Номер: US20220068587A1
Автор: REN Yan
Принадлежит:

Systems and methods of observing a sample in a multi-beam apparatus are disclosed. The multi-beam apparatus may include an electron source configured to generate a primary electron beam, a pre-current limiting aperture array comprising a plurality of apertures and configured to form a plurality of beamlets from the primary electron beam, each of the plurality of beamlets having an associated beam current, a condenser lens configured to collimate each of the plurality of beamlets, a beam-limiting unit configured to modify the associated beam current of each of the plurality of beamlets, and a sector magnet unit configured to direct each of the plurality of beamlets to form a crossover within or at least near an objective lens that is configured to focus each of the plurality of beamlets onto a surface of the sample and to form a plurality of probe spots thereon.

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Номер записи: 90
03-03-2022 дата публикации

CHARGED PARTICLE SOURCE

Номер: US20220068589A1
Автор: Li Shuai
Принадлежит:

This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

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Номер записи: 91
03-03-2022 дата публикации

SYSTEM AND METHOD FOR BARE WAFER INSPECTION

Номер: US20220068592A1
Автор: Fang Wei, Wang Joe
Принадлежит:

A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

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Номер записи: 92
03-03-2022 дата публикации

Pedestal Support Design for Precise Chamber Matching and Process Control

Номер: US20220068608A1
Автор: Baluja Sanjeev, KRISHNA Gopu, Polyak Alexander S.
Принадлежит: Applied Materials, Inc.

Process chambers and methods for calibrating components of a processing chamber while the chamber volume is under vacuum are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A support plate is positioned under the chamber floor to accommodate for deflection of the chamber floor due to vacuum conditions within the chamber volume. A bellows assembly extending from the chamber floor to the support plate maintains vacuum conditions within the chamber.

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Номер записи: 93
03-03-2022 дата публикации

Method and device for controlling a thickness of a protective film on a substrate

Номер: US20220068645A1
Автор: Takayuki Katsunuma
Принадлежит: Tokyo Electron Ltd

A method of forming a film on a substrate that includes an etching layer and a mask formed on the etching layer. The method comprises (a) exposing the substrate, in a reaction chamber, to a precursor to dispose precursor particles on at least a sidewall of a recess in the etching layer; (b) supplying an inhibitor gas and a modification gas to the reaction chamber to generate a plasma; and (c) modifying the precursor particles on the sidewall into a protective film while the inhibitor gas and the modification gas are supplied in the reaction chamber.

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Номер записи: 94
25-02-2016 дата публикации

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Номер: US20160056019A1
Автор: ANWAR Suhail, CHOI Soo Young, HOU LI, Kim Ki Woon, KURITA Shinichi, PARK Beom Soo, TINER Robin L., WANG Qunhua, WHITE John M., WON Tae Kyung
Принадлежит:

Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties. 1. A gas distribution plate assembly for a plasma processing chamber , comprising:a diffuser plate element having an edge, a center, a concave upstream side and a downstream side; and an orifice hole having a first diameter; and', 'a hollow cathode cavity that is downstream of the orifice hole and is at the downstream side, the hollow cathode cavity having a cone or cylinder shape and a second diameter at the downstream side that is greater than the first diameter, the second diameters or the depths or a combination of both of the cones or cylinders increases from the center to ...

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Номер записи: 95
25-02-2016 дата публикации

METHOD FOR VOID-FREE COBALT GAP FILL

Номер: US20160056077A1
Автор: Danek Michal, Humayun Raashina, Lai Chiukin Steven, Na Jeong-Seok, Tarafdar Raihan
Принадлежит:

Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors. Methods may also involve using a remote plasma source to generate the nitrogen-based plasma. Methods also involve annealing the substrate. 1. A method of processing a semiconductor substrates , the method comprising:(a) providing a substrate having one or more features, each feature comprising a feature opening;(b) selectively inhibiting cobalt nucleation on surfaces of the one or more features that are at or near the feature openings such that there is a differential inhibition profile in each feature; and(c) exposing the substrate to a cobalt-containing precursor to partially fill the one or more features,wherein selectively inhibiting cobalt nucleation further comprises exposing the substrate to plasma generated from a nitrogen-containing gas in a remote plasma source.2. The method of claim 1 , further comprising depositing cobalt in the one or more features in accordance with the differential inhibition profile.3. The method of claim 1 , further comprising repeating (b) and (c) in two or more cycles to deposit cobalt into the one or more features.4. The method of claim 1 , further comprising annealing the substrate after partially filling the one or more features.5. The method of claim 3 , further comprising annealing the substrate after partially filling the one or more ...

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Номер записи: 96
14-02-2019 дата публикации

METHOD OF ANALYZING SURFACE MODIFICATION OF A SPECIMEN IN A CHARGED-PARTICLE MICROSCOPE

Номер: US20190051492A1
Автор: Boughorbel Faysal, Korkmaz Emine, Potocek Pavel, van den Boogaard Mathijs Petrus Wilhelmus
Принадлежит: FEI COMPANY

Producing and storing a first image, of a first, initial surface of the specimen; 1. A method comprising:acquiring, with a charged particle microscope, a first image of a first surface of a sample;modifying, with the charged particle microscope, the first surface to produce a modified surface;acquiring, with the charged particle microscope, a second image of the modified surface;determining a level of similarity between the first and second images;comparing the level of similarity to first and second thresholds; andbased on the level of similarity being above the first threshold, performing a first modification of the modified surface, andbased on the level of similarity being below the second threshold, performing a second modification of the modified surface, the second modification different than the first modification.2. The method of claim 1 , wherein determining a level of similarity between the first and second images comprises:performing a comparison of the first and second images using a mathematical image similarity metric to form a primary figure of merit, wherein the primary figure of merit quantifies the level of similarity of the first and second images.3. The method of claim 2 , wherein the image similarity metric is selected from the group comprising SSIM claim 2 , MSE claim 2 , PSNR claim 2 , MIR claim 2 , and combinations and hybrids hereof.4. The method of claim 2 , wherein performing the comparison of the first and second images includes performing a pixel-wise comparison.5. The method of claim 1 , wherein the level of similarity in conjunction with the first and second threshold is used to at least determine one of the following scenarios:the modification of the first surface failed to modify said first surface;the modification of the first surface insufficiently modified the first surface; andthe second surface is corrupted relative to the first surface.6. The method of claim 1 , wherein the charged particle microscope includes one of the ...

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Номер записи: 97
22-02-2018 дата публикации

Microscopy imaging method and system

Номер: US20180053627A1
Автор: Ken Guillaume Lagarec, Michael William Phaneuf
Принадлежит: Fibics Inc

Notches or chevrons with known angles relative to each other are formed on a surface of the sample, where each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

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Номер записи: 98
05-03-2015 дата публикации

APPARATUS OF PLURAL CHARGED PARTICLE BEAMS WITH MULTI-AXIS MAGNETIC LENS

Номер: US20150060662A1
Автор: Chen Zhongwei, Hu Xuerang, Liu Xuedong, REN Weiming
Принадлежит:

An apparatus of plural charged particle beams with multi-axis magnetic lens is provided to perform multi-functions of observing a specimen surface, such as high-throughput inspection and high-resolution review of interested features thereof and charge-up control for enhancing image contrast and image resolution. In the apparatus, two or more sub-columns are formed and each of the sub-columns performs one of the multi-functions. Basically the sub-columns take normal illumination to get high image resolutions, but one or more may take oblique illuminations to get high image contrasts. 1. An apparatus of plural charged particle beams , comprising:a specimen stage, which sustains a specimen thereon; andmultiple sub-columns, which are placed above an observed surface of said specimen and respectively perform one of multiple functions for observing said observed surface,wherein a first function of said multiple functions is high-throughput inspection of interested features on said observed surface, and a second function of said multiple functions is high-resolution review of said interested features on said observed surface, a gun unit, which comprises a charged particle source and a condenser lens to provide a primary charged particle beam along an optical axis of said each sub-column; and', 'an imaging system, which comprises a beam-limit aperture, an objective lens, a deflection scanning device and a first charged-particle detector, wherein said beam-limit aperture and said objective lens are aligned with said optical axis, said beam-limit aperture limits a current of said primary charged particle beam to a desired value, said objective lens focuses said primary charged particle beam onto said observed surface, said first charged-particle detector detects secondary charged particles emitted from said observed surface where said primary charged particle beam impinges, and said deflection scanning device deflects said primary charged particle beam to scan said observed ...

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Номер записи: 99
05-03-2015 дата публикации

System and Method for Controlling Charge-up in an Electron Beam Apparatus

Номер: US20150060665A1
Автор: Chen Zhongwei, REN Weiming
Принадлежит:

The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface. 1. A method for eliminating positive charges on a surface of a sample in a scanning electron microscope , comprising:providing an electrostatic extraction field on said surface during a period of line-scanning;providing an electrostatic reflection field above said surface during a period of beam-retracing immediately next to said period of line-scanning; wherein, on said surface, a path of said primary electron beam during said period of beam-retracing covers a path of said primary electron beam during said period of line-scanning,', 'wherein said electrostatic reflection field reflects a desired amount of secondary electrons emitted from said surface back to said surface to neutralize positive charges on said surface to reach a charge balance thereon., 'providing a primary electron beam of said scanning electron microscope to said surface during said period of beam-retracing,'}2. A method for eliminating positive charges on a surface of a sample in a scanning electron microscope , comprising:providing an electrostatic extraction field on said surface and an electrostatic reflection field above said surface simultaneously,wherein said electrostatic reflection field reflects a desired amount of secondary electrons emitted from said surface back to said surface to neutralize positive charges on said surface to reach a charge balance thereon. This application ...

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Номер записи: 100