Apparatus

Ion irradiation of a target at very high and very low kinetic ion energies

WEAKENING FOCUSING EFFECT OF ACCELERATION-DECELERATION COLUMN OF ION IMPLANTER

Terminal lens

Provided herein are approaches for an accelerator/decelerator, an ion implantation system, and controlling an ion beam within an accelerator/decelerator. Specifically, a terminal lens is provided. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. The system further includes a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply. In an exemplary approach, the lens is electrically insulated from the terminal suppression electrode and independently driven, thus allowing for ...

CHARGED PARTICLE BEAM DEVICE WITH MULTI-SOURCE ARRAY

The present invention provides a charged particle beam device. The device comprises an emitter array (22) for emitting a plurality of charged particle beams (8). The plurality of charged particle beams are imaged with a lens (12). An electrode unit (14) is provided for accelerating the plurality of charged particle beams. The potential differences between a first potential of the emitter array, a second potential of the electrode unit, and a third potential of a specimen, are controlled by a first control unit (11) and a second control unit. Thereby, the second potential is capable of accelerating the plurality of charged particle beams with respect to the first potential, and the third potential is capable of decelerating the plurality of charged particle beams with respect to the second potential.

DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE

The present invention provides a drawing apparatus for performing drawing on a substrate with a plurality of charged particle beams, the apparatus including an aperture array member in which a plurality of first apertures, for generating the plurality of charged particle beams, is formed, and a generating device configured to individually generate electric potentials in a plurality of regions of the aperture array member, wherein each of the plurality of regions corresponds to at least one of the plurality of first apertures.

REDUCED IMPLANT VOLTAGE DURING ION IMPLANTATION

A method for ion implantation is disclosed which includes decreasing the implant energy level as the implant process is ongoing. In this way, either a box-like profile or a profile with higher retained dose can be achieved, enabling enhanced activation at the same junction depth. In one embodiment, the initial implant energy is used to implant about 25% of the dose. The implant energy level is then reduced and an additional 50% of the dose is implanted. The implant energy is subsequently decreased again and the remainder of the dose is implanted. The initial portion of the dose can optionally be performed at cold, such as cryogenic temperatures, to maximize amorphization of the substrate.

APPARATUS AND TECHNIQUES FOR GENERATING BUNCHED ION BEAM

An ion implantation system, including an ion source, and a buncher to receive a continuous ion beam from the ion source, and output a bunched ion beam. The buncher may include a drift tube assembly, having an alternating sequence of grounded drift tubes and AC drift tubes. The drift tube assembly may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes downstream to the first grounded drift tube, a second grounded drift tube, downstream to the at least two AC drift tubes. The ion implantation system may include an AC voltage assembly, coupled to the at least two AC drift tubes, and comprising at least two AC voltage sources, separately coupled to the at least two AC drift tubes. The ion implantation system may include a linear accelerator, comprising a plurality of acceleration stages, disposed downstream of the buncher.

Elektrostatische Linse mit Beschleunigung und Abbremsung zur variablen Fokussierung und Massenauflösung eines Ionenstrahls in einer Ionenimplantationsanlage

Vorrichtung zur Vermeidung von parasitären Schwingungen in Elektronenstrahlröhren

Vorrichtung zur Vermeidung von parasitären Schwingungen in Elektronenstrahlröhren, umfassend einen Strahltunnel (2) mit axial anliegenden statischen Magnetfeld sowie axial abwechselnd angeordneten Keramik- und Metallringen (12, 13). Die Aufgabe liegt darin, die Elektronenstrahlröhre so zu modifizieren, dass in dieser Störschwingungen unterdrückt oder deren Auswirkungen auf den Elektronenstrahl reduziert werden. Die Aufgabe wird dadurch gelöst, dass die Metallringe (13) jeweils Strukturen (16) am inneren Umfang (14) der Ringdurchbrüche (15) aufweisen.

EINRICHTUNG ZUR MESSUNG DER EMISSION VON RÖNTGENSTRAHLEN, DIE DURCH EIN OBJEKT ERZEUGT WERDEN, DAS EINEM ELEKTRONENSTRAHL AUSGESETZT IST

EINRICHTUNG ZUR MESSUNG DER EMISSION VON RÖNTGENSTRAHLEN, DIE DURCH EIN OBJEKT ERZEUGT WERDEN, DAS EINEM ELEKTRONENSTRAHL AUSGESETZT IST

MECHANISM FOR THE MEASUREMENT OF THE EMISSION OF X-RAY, THE BY AN OBJECT PRODUCES, WHICH IS EXPOSED TO AN ELECTRON-BEAM

Electron detectors

Uniformity control using ion beam blockers

An ion beam is generated and the energy of this ion beam is changed from a first energy to a second energy through, for example, acceleration or deceleration. A portion of the ion beam is blocked after the energy is changed and the ion beam is implanted into a workpiece. A plurality of blockers may be used to block the beam. Each blocker may be attached to a drive unit configured to translate one of the blockers in a first direction.

Method and apparatus for distance measurement

Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Bestimmung des Abstands (Z) einer zu untersuchenden Probe (12) von mindestens einem Referenzpunkt (19, 21). Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren und eine Vorrichtung anzugeben, die unabhängig von der Art der Probe arbeiten, wobei das Verfahren einfach durchzuführen sowie die Vorrichtung einfach ausgestaltet ist. Die Erfindung schlägt hierzu vor, einem ersten Potential einer Probe (12) ein Signal aufzumodulieren und der Probe (12) einen Primärteilchenstrahl zuzuführen, wobei aufgrund einer Wechselwirkung ein Sekundärteilchenstrahl erzeugt wird, dessen Teilchen das aufmodulierte Signal aufweisen. Die Teilchen des Sekundärteilchenstrahls sowie das dem Potential der Teilchen des Sekundärteilchenstrahls aufmodulierte Signal werden detektiert. Durch Vergleichen des detektierten aufmodulierten Signals mit einem Referenzsignal wird aus einer Relation zwischen dem Referenzsignal und dem detektierten aufmodulierten Signal ...

BESCHLEUNIGUNGS- UND ANALYSEVORRICHTUNG FÜR EINE IONENIMPLANTATIONSANLAGE

Verfahren und Vorrichtung zur Abstandsmessung

Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Bestimmung des Abstands (Z) einer zu untersuchenden Probe (12) von mindestens einem Referenzpunkt (19, 21). Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren und eine Vorrichtung anzugeben, die unabhängig von der Art der Probe arbeiten, wobei das Verfahren einfach durchzuführen sowie die Vorrichtung einfach ausgestaltet ist. Die Erfindung schlägt hierzu vor, einem ersten Potential einer Probe (12) ein Signal aufzumodulieren und der Probe (12) einen Primärteilchenstrahl zuzuführen, wobei aufgrund einer Wechselwirkung ein Sekundärteilchenstrahl erzeugt wird, dessen Teilchen das aufmodulierte Signal aufweisen. Die Teilchen des Sekundärteilchenstrahls sowie das dem Potential der Teilchen des Sekundärteilchenstrahls aufmodulierte Signal werden detektiert. Durch Vergleichen des detektierten aufmodulierten Signals mit einem Referenzsignal wird aus einer Relation zwischen dem Referenzsignal und dem detektierten aufmodulierten Signal ...

Masked ion beam lithography apparatus

A particle beam exposure apparatus 1 for irradiating a target 41 with a beam of energetic electrically charged particles 21 via a pattern definition means 102 with a plurality of apertures. The patterned beam 22 emerging from said stencil mask 102 is projected, and specifically demagnified, by means of a projection system 103 onto the target 41. The apparatus further comprises an acceleration/deceleration means 32 which generates a potential gradient orientated parallel to the path of the structured beam 22, and which is constant over at least a cross-section of said beam 22. The acceleration/deceleration means 32 may comprise a sequence of equally spaced ring-shaped electrodes (see 33 in figure 2), and be located after said projection system 31, or alternatively, immediately before or after the pattern definition means 102 (see figures 6, 7 and 8).

ACCELERATOR-DECELERATOR ELECTROSTATIC LENS FOR VARIABLY FOCUSING AND MASS RESOLVING AN ION BEAM IN AN ION IMPLANTER

An electrostatic triode lens (36) is provided for use in an ion implantation system (10). The lens includes a terminal electrode (37) and an adjustable| lens subassembly (40) comprising a suppression electrode (38) and a resolving electrode (39), each having matched curved surfaces (108,110). The len s subassembly is positioned near the terminal electrode where the beam has a minimal waist in a first (dispersive) plane. Such positioning minimizes the requ ired gaps between electrodes, and thus, helps minimize beam blow-up and the electron depletion region in the deceleration mode of operation. The suppression and resolving electrodes each have first and second portions (38A and 38B, 39A and 39B) separated by a gap (d38, d39). A movement mechanism (60, 62) simultaneously moves the first portions of the suppression and resolving electro des (38A, 39A.) toward and away from the second portions of the suppression and resolving electrodes (38B, 39B), respectively, to adjust the gaps (d38, d39 ...

Irradiation system with ion beam and method to enhance accuracy of irradiation

Ion implantation ion source, system and method

An ion source (1) for ion implantation system and a method of ion implantation employs a controllable broad, directional electron beam (32) to ionize process gas or vapor, such as decaborane, within an ionization volume (16) by primary electron impact, in CMOS manufacturing and the like. A controllable low-temperature vaporizer (2, 28) communicating via a high conductance path to the ionization chamber enables relatively gentle handling of feed materials, making possible novel use of numerous hydrides, dimer-containing compounds, and other temperature-sensitive materials. Isolation of the electron gun (12, 33, 34, Fig 4B, etc.) for producing the energetic electron beam and of a beam dump (11) to which the energetic beam is directed, as well as use of thermally conductive members and gas conduction for cooling the ionization chamber (5) and controlling the temperature of the vaporizer (2, 28), enable use of the system with large molecular species such as decaborane, and other temperature-sensitive ...

Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter

An electrostatic triode lens (36) is provided for use in an ion implantation system (10). The lens includes a terminal electrode (37) and an adjustable lens subassembly (40) comprising a suppression electrode (38) and a resolving electrode (39), each having matched curved surfaces (108, 110). The lens subassembly is positioned near the terminal electrode where the beam has a minimal waist in a first (dispersive) plane. Such positioning minimizes the required gaps between electrodes, and thus, helps minimize beam blow-up and the electron depletion region in the deceleration mode of operation. The suppression and resolving electrodes each have first and second portions (38A and 38B, 39A and 39B) separated by a gap (d38, d39). A movement mechanism (60, 62) simultaneously moves the first portions of the suppression and resolving electrodes (38A, 39A) toward and away from the second portions of the suppression and resolving electrodes (38B, 39B), respectively, to adjust the gaps (d38, d39) therebetween ...

CHARGED PARTICLE BEAM DEVICE

This charged particle beam device comprises: a charged particle source (101); an acceleration electrode (113); optical elements (106, 902, 903, 905) that adjust a primary charged particle beam (102); a temperature meter (901) that measures temperature changes in an objective lens (106); and a control device (128) that controls the acceleration electrode and the optical elements. The control device adjusts the optical elements when: (a) a first temperature change has been detected, when the acceleration voltage of the primary charged particle beam is greater than a prescribed value; and (b) when a second temperature change smaller than the first temperature change has been detected, when the acceleration voltage of the primary charged particle beam is no more than a prescribed value. As a result, it is possible to achieve both suppression of the impact on optical conditions when the acceleration voltage of the primary charged particle beam is changed, and increased device throughput.

Irradiation system ion beam and method to enhance accuracy of irradiation

The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

ENERGY FILTER FOR PROCESSING A POWER SEMICONDUCTOR DEVICE

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

ELECTRON BEAM EXPOSURE METHOD AND SYSTEM THEREFOR

A method of leading an electron beam (22) radiated from an electron emitter (14) through openings provided in a stencil mask (18) to a sensitive sample (12) and exposing it includes placing the electron beam under a low field intensity where the electron beam progresses at a slow speed until reaching the openings of the stencil mask and thereafter placing the electron beam having passed through the openings of the stencil mask under a high field intensity where the electron beam progresses at a high speed. An apparatus for electron beam projection lithography comprises an electron emitter, a stencil mask having openings for permitting the electron beam radiated from the electron emitter to pass through, a base (16) for supporting an exposure sample, and a device for placing the electron beam under a low field intensity as well as a high field generator for placing the electron beam under a high field intensity.

CHARGED PARTICLE APPARATUS AND METHOD

A charged particle device projects charged-particle beams along beampaths towards a sample location. The device comprises: a charged-particle lens assembly for manipulating the beams and a controller . The lens assembly comprises plates each having an aperture array for passage of beampaths. The plates are at different plate locations along the beampaths. The controller controls the charged-particle device such that charged particles of the beams have different energy values at the different plate locations along the beampaths. The lens assembly comprises a corrector comprising an individual correctors configured to perform aberration correction at respective apertures independently of each other. The corrector is associated with the plate at the plate location at which the energy value is smallest, the strength of an electric field adjacent to the plate is greatest and/or a ratio of the energy value to strength of an electric field adjacent to the plate is smallest.

Partikelstrahlgerät

DEVICE AND PROCEDURE FOR THE CONTROLLED MANUFACTURING OF SEMICONDUCTORS OF MEANS PARTICLE BEAMS

Irradiation system with ion beam and method to enhance accuracy of irradiation

The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Irradiation system with ion beam and automatic tuning system

CHARGED PARTICLE BEAM APPARATUS

Provided is a method for high-speed neutralizing of charge arising in the area of a sample irradiated by a charged particle beam without providing a new, separate device in a charged particle beam apparatus. At the stage following irradiation by the charged particle beam for measuring the sample and before carrying out the next measurement, the retarding voltage and/or acceleration voltage is adjusted and controlled such that neutralization is accomplished by the difference between the value for the retarding voltage and the value for the acceleration voltage being made less than that during measurements. The charge arising in the area of the sample irradiated by the charged particle beam can be neutralized without providing a separate device in the charged particle beam apparatus; therefore, neutralization is possible without lowering throughput.

DEVICE FOR PREVENTING PARASITIC OSCILLATIONS IN ELECTRON BEAM TUBES

The invention relates to a device for preventing parasitic oscillations in electron beam tubes, comprising a beam tunnel (2) having a static magnetic field present in an axial manner and ceramic and metal rings (12, 13) arranged in an alternating manner axially. The aim of the invention is to modify the electron beam tube such that spurious oscillations are suppressed or the effects thereof on the electron beam are reduced. This aim is achieved in that each metal ring (13) comprises structures (16) on the inner circumference (14) of the ring apertures (15).

IMAGING SYSTEM WITH MULTI-SOURCE ARRAY

The present invention provides a charged particle beam device. The device comprises an emitter array (22) for emitting a plurality of charged particle beams (8). The plurality of charged particle beams are imaged with a lens (12). An electrode unit (14) is provided for accelerating the plurality of charged particle beams. The potential differences between a first potential of the emitter array, a second potential of the electrode unit, and a third potential of a specimen, are controlled by a first control unit (11) and a second control unit. Thereby, the second potential is capable of accelerating the plurality of charged particle beams with respect to the first potential, and the third potential is capable of decelerating the plurality of charged particle beams with respect to the second potential.

Ion implantation ion source, system and method

Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large faction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing ...

Particle beam apparatus

A particle beam apparatus with a source for generating a primary particle beam, means for focussing the primary particle beam onto a specimen, a detection system for detecting particles released at the specimen, first means to accelerate the primary particle beam to a first energy, first means to decelerate the primary particle beam before the detection system from the first energy to a second lower energy, second means to accelerate the primary particle beam after the detection system from the second energy to a third higher energy and second means to decelerate the primary particle beam from the third energy to a final beam energy. The detection system further comprises a converter to convert particles released at the specimen into converted secondary particles which will be detected by the detector.

Charged particle beam system

A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector.

Apparatus and method for controlled particle beam manufacturing of semiconductors

PARTICLE OPTICAL DEVICE

PROBLEM TO BE SOLVED: To increase the number and density of primary electron beamlet spots formed at a time while maintaining a desired image forming resolution of an electron microscope device. SOLUTION: A particle optical device includes a charged particle source, and a porous plate arranged in a beam passage. The porous plate has a plurality of openings formed in a first prescribed array pattern, a plurality of charged particle beamlets are formed from a charged particle beam in the downstream, and by the plurality of the beamlets, a plurality of beamlet spots arranged in a second prescribed array pattern are formed on an image plane of the particle optical device. The particle optical device further includes particle optical elements in order to operate the charged particle beam and/or the plurality of the beamlets. The first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity, which is higher than the first ...

ION BEAM APPARATUS AND METHOD FOR ION IMPLANTATION

A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic ...

ION BEAM IRRADIATION APPARATUS

An apparatus is provided. The apparatus includes a beam current measuring device and a first electrode. The beam current measuring device is retractably movable into an ion beam trajectory so as to measure an ion beam current. The first electrode is disposed immediately upstream of the beam current measuring device in an ion beam transport channel. The first electrode serves both as a suppressor electrode for repelling secondary electrons released from the beam current measuring device, back toward the beam current measuring device, and as a beam optical element other than the suppressor electrode.

ION BEAM APPARATUS AND METHOD EMPLOYING MAGNETIC SCANNING

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially ...

Ion Implantation Method, Ion Implantation Apparatus and Semiconductor Device

An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

MULTI MODE SYSTEMS WITH RETRACTABLE DETECTORS

A method for evaluating a specimen includes positioning a detector in an inserted position in which a first distance between a tip of the detector and a plane extending along a surface of the specimen is less than a distance between the plane and a tip of charged particle beam optics. While maintaining the detector at the inserted position, the surface of the specimen is scanned by a primary beam that exits from the tip of the charged particle beam optics. The detector detects x-ray photons and/or charged particles emitted or reflected from the specimen as a result of scanning the specimen with the primary beam. After completion of the scanning, the detector is positioned at a retracted position in which a second distance between the tip of the detector and the plane exceeds a distance between the tip of the charged particle beam optics and the plane.

Energy filter for processing a power semiconductor device

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

APPARATUS AND METHOD FOR CONTROLLED PARTICLE BEAM MANUFACTURING

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

A particle-optical arrangement comprises at least one charged-particle source for generating at least one beam of charged particles; at least one multi-aperture plate arranged in a beam path of the at least one beam of charged particles, wherein the at least one multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the at least one beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the particle-optical arrangement by the plurality of charged-particle beamlets; and wherein a shape of at least one group of the apertures is an elliptical shape.

SAMPLE ANALYSIS DEVICE

PROBLEM TO BE SOLVED: To provide a sample analysis device which is suitable for the analysis of a thick sample and which can identify the material of the sample. SOLUTION: The sample analysis device comprises an irradiation system which irradiates charged particles to a wafer 18, having a recessed part partially on the surface; a rotation ellipse reflecting mirror 17 which collects luminescence obtained from the surface side of the sample, based on irradiation of the charged particles; a photodetector 33 which detects the luminescence led by the rotating ellipse reflecting mirror 17; a charged particle detector 25 which detects the charged particles reflected from the surface of the sample; and a signal processing part 24 which determines the shape of the sample, based on the detection signal of the charged particle detector 25 and identifies the material of the wafer 18, based on the detection signal of the photodetector 33. The irradiation system is controlled so as to irradiate the charged ...

LADUNGSTEILCHENSTRAHLGERÄT, VERBUNDLADUNGSTEILCHENSTRAHLGERÄT, UND STEUERVERFAHREN FÜR LADUNGSTEILCHENSTRAHLGERÄT

Bereitgestellt werden ein Ladungsteilchenstrahlgerät, ein Verbundladungsteilchenstrahlgerät und ein Steuerverfahren für ein Ladungsteilchenstrahlgerät, mit welchen, wenn eine Objektivlinse zwischen einem Beschleunigungsmodus und einem Verzögerungsmodus umgeschaltet wird oder eine Anlegespannung einer Verstärkerelektrode, welche die Objektivlinse bildet, verändert wird, es möglich ist, ein abgetastetes Bild einer Probenfläche ohne irgendeine Verzerrung und mit einem genauen Maß auf dem gleichen Niveau wie bei einem Bild vor dem Umschalten oder der Änderung zu erhalten. Das Ladungsteilchenstrahlgerät umfasst: eine Ladungsteilchenquelle, welche dafür ausgelegt ist, um Ladungsteilchen zu erzeugen; eine Vielzahl von Abtastelektroden, welche dafür ausgelegt sind, um elektrische Felder zum Ablenken von Ladungsteilchen zu erzeugen, welche durch Anlegen einer Beschleunigungsspannung an die Ladungsteilchenquelle und Anlegen einer Extraktionsspannung an eine Extraktionselektrode ausgestrahlt werden ...

DEVICE OF MEASUREMENT OF the EMISSION OF X-RAYS PRODUCED BY a SUBJECTED OBJECT has UNFAISCEAU Of ELECTRONS

CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND THE DEVICE MANUFACTURING METHOD TO SUPPRESS THE BLURRING OF THE CHARGED PARTICLE RAY BY COULOMB

PURPOSE: A charged particle beam lithography apparatus and device manufacturing method are provided not to generate the anisotropic aberration and to prevent the deterioration of the optical property of symmetrical magnetic doubilet lens. CONSTITUTION: The projection system comprises the symmetrical magnetic doubilet lens for generating the magnetic field and the electrostatic lens for generating the electric field overlapped in the magnetic field. The symmetrical magnetic doubilet lens is comprised of the magnetic field lens of the upper part and the electric field lens(12) of the lower part. The electrostatic lens comprises the first cylinder electrode(19) facing the image plane(11) from the object plane(10) and the second cylinder electrode(20) and the third cylinder electrode(21). © KIPO 2009 ...

Imaging system with multi source array

The present invention provides a charged particle beam device. The device comprises an emitter array (22) for emitting a plurality of charged particle beams (8). The plurality of charged particle beams are imaged with a lens (12). An electrode unit (14) is provided for accelerating the plurality of charged particle beams. The potential differences between a first potential of the emitter array, a second potential of the electrode unit, and a third potential of a specimen, are controlled by a first control unit (11) and a second control unit. Thereby, the second potential is capable of accelerating the plurality of charged particle beams with respect to the first potential, and the third potential is capable of decelerating the plurality of charged particle beams with respect to the second potential.

Multi-energy ion implantation

In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.

Anordnung zur Reduzierung der Raumladungswirkung in elektronen-spektroskopischen Geräten

Gegenstand der Erfindung ist eine Anordnung zur Reduzierung der Raumladungswirkung eines von einer Probenoberfläche (1) ermittelten Elektronenstrahls, umfassend eine oder mehrere Steuerelektroden (2) die dazu eingerichtet sind, im Bereich unmittelbar vor der Probenoberfläche ein retardierendes elektrisches Feld (7) zu erzeugen, um so eine möglichst schnelle Abtrennung des Untergrundes aus langsameren Elektronen (4) vom zu untersuchenden Signal der Primärelektronen (5) zu bewirken.

Teilchenstrahlgerät

CHARGED PARTICLE BEAM APPARATUS

PARTICLE-OPTICAL SYSTEMS, COMPONENTS AND ARRANGEMENTS

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher ...

Retarding field electron-optical apparatus

A method of noncontact testing and an electron optical system includes an electron source for producing a high energy electron beam, a retarding field objective lens system for receiving and focussing the high energy electron beam to produce a focussed low energy electron beam, and a magnetic deflector for deflecting the focussed low energy electron beam to the sample, thereby to expose the sample to the low energy electron beam, and simultaneously maintaining a predetermined spot size of the beam. The retarding field objective lens system includes a device for retarding electrons in the low energy electron beam directed to the sample and for accelerating electrons, emitted by the sample upon being irradiated by the low energy electron beam.

ENERGY FILTER ELEMENT FOR ION IMPLANTATION SYSTEMS FOR USE IN WAFER PRODUCTION

Beschrieben wird eine Implantationsvorrichtung, eine Implantationsanlage und ein Verfahren. Die Implantationsvorrichtung umfasst einen Filterrahmen und ein durch den Filterrahmen gehaltenes Filter, das dazu ausgebildet ist, von einem Ionenstrahl durchstrahlt zu werden.

ION BEAM IRRADIATION SYSTEM SUITABLE FOR SINGLE IRRADIATION TARGET ION IMPLANTATION AND METHOD TO ENHANCE ACCURACY OF IRRADIATION

PURPOSE: An ion beam irradiation system suitable for a single irradiation target ion implantation and a method to enhance the accuracy of irradiation are provided to achieve a high-current ion implantation with high accuracy by eliminating deviation in the ion beam. CONSTITUTION: An extraction electrode(2) is provided on an outlet side of an ion source(1). A mass analysis electromagnet device(3) is installed on the downstream side of the extraction electrode. A steering electromagnet(13) for a horizontal direction center trajectory correction, the vertically focusing DC quadrupole electromagnet(5), a horizontally focusing synchronized quadrupole electromagnet(8), a steering electromagnet(14) for a vertical direction center trajectory correction, a horizontally focusing synchronized quadrupole electromagnet(9), and a horizontally focusing DC quadrupole electromagnet(6) are installed on the downstream side of the mass analysis electromagnet device. An electron suppression electrode(26) is ...

Ion beam line

In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.

SAMPLE ANALYZING APPARATUS

A sample analyzing apparatus includes: an irradiation system which irradiates a charged particle onto a sample having a concave portion partially on a surface thereof; a light condensing reflecting mirror which condenses luminescence obtained from the surface based on the irradiation of the charged particle; a light detector which detects the luminescence guided to the light condensing reflecting mirror; a charged particle detector which detects the charged particle reflected from the surface of the sample as a reflection charged particle; and a signal processor which controls the irradiation system to irradiate the charged particle intermittently, which obtains a shape of the sample on the basis of a detection signal outputted from the charged particle detector, and which identifies a material of the sample on the basis of an attenuation characteristic of a detection signal outputted from the light detector in a period from a time point in which the intermittent irradiation of the charged ...

FOCUSED ION BEAM APPARATUS, AND CONTROL METHOD FOR FOCUSED ION BEAM APPARATUS

The focused ion beam apparatus includes: an ion source configured to generate ions; a first electrostatic lens configured to accelerate and focus the ions to form an ion beam; a beam booster electrode configured to accelerate the ion beam to a higher level; one or a plurality of electrodes, which are placed in the beam booster electrode, and are configured to electrostatically deflect the ion beam; a second electrostatic lens, which is provided between the one or plurality of electrodes and a sample table, and is configured to focus the ion beam applied with a voltage; and a processing unit configured to obtain a measurement condition, and set at least one of voltages to be applied to the one or plurality of electrodes or a voltage to be applied to each of the first electrostatic lens and the second electrostatic lens, based on the obtained measurement condition.

Charged particle beam system and method of operating the same

A method of operating a charged particle beam system, the method comprises extracting a particle beam from a source; performing a first accelerating of the particles of the beam; forming a plurality of particle beamlets from the beam after the performing of the first accelerating; performing a second accelerating of the particles of the beamlets; performing a first decelerating of the particles of the beamlets after the performing of the second accelerating; deflecting the beamlets in a direction oriented transverse to a direction of propagation of the particles of the beamlets after the performing of the first decelerating; performing a second decelerating of the particles of the beamlets after the deflecting of the beamlets; and allowing the particles of the beamlets to be incident on an object surface after the performing of the second decelerating.

Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

ELECTRON MICROSCOPE AND OBSERVATION METHOD

An electron microscope includes an electron gun for generating an electron beam, an accelerator for accelerating the electron beam to apply the electron beam to a sample, a spectroscope for selecting electrons having a specific energy out of the electron beam transmitted through the sample and losing an energy by an interaction with the sample, and a detector for detecting the electrons of the specific energy selected by the spectroscope and giving a transmission signal or a diffraction signal at a depth of the sample corresponding to a lost energy quantity of the electrons.

Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

A particle-optical component comprises at least one multi-aperture plate having a plurality of apertures formed therein, each for manipulating particles of a charged particle beamlet passing therethrough; wherein the multi-aperture plate comprises plural conductive layer portions arranged substantially in a single plane, wherein plural apertures are formed in each of the plural conductive layer portions, and wherein a resistant gap is formed between adjacent conductive layer portions.

PARTICLE-OPTICAL SYSTEMS AND ARRANGEMENTS AND PARTICLE-OPTICAL COMPONENTS FOR SUCH SYSTEMS AND ARRANGEMENTS

Ion implantation ion source, system and method

DEVICE OF MEASUREMENT OF THE EMISSION OF X-RAYS PRODUCED BY A SUBJECTED OBJECT HAS AN ELECTRON BEAM

La présente invention porte sur un dispositif de mesure de l'émission de rayons X produite par un objet, ou échantillon, soumis à un faisceau d'électrons. Le dispositif comporte au moins un sous-ensemble ou colonne électronique qui permet d'élaborer et de contrôler le faisceau d'électrons et un support permettant de positionner l'objet mesuré. Il comporte également des moyens d'analyse spectrale des rayons X émis par l'échantillon à analyser et des moyens optiques permettant de contrôler la position de l'échantillon par rapport au faisceau. L'énergie du faisceau créé, ainsi que l'intensité du courant d'électrons obtenu permettent de répondre aux exigences de sensibilité, de résolution et de précision demandée par les fabricants de semi-conducteurs. L'invention s'applique notamment au contrôle de fabrication de wafer de circuits intégrés.

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING THE SAME

A method of operating a charged particle beam system, the method comprises extracting a particle beam from a source; performing a first accelerating of the particles of the beam; forming a plurality of particle beamlets from the beam after the performing of the first accelerating; performing a second accelerating of the particles of the beamlets; performing a first decelerating of the particles of the beamlets after the performing of the second accelerating; deflecting the beamlets in a direction oriented transverse to a direction of propagation of the particles of the beamlets after the performing of the first decelerating; performing a second decelerating of the particles of the beamlets after the deflecting of the beamlets; and allowing the particles of the beamlets to be incident on an object surface after the performing of the second decelerating. 129-. (canceled)30. A method of operating a charged particle beam system , the method comprising:extracting a particle beam from a source;performing a first accelerating of particles of the particle beam;forming a plurality of particle beamlets from the particle beam after performing the first accelerating;performing a second accelerating of particles of the particle beamlets;performing a first decelerating of the particles of the particle beamlets after performing the second accelerating;deflecting the particle beamlets in a direction oriented transverse to a direction of propagation of the particles of the particle beamlets after performing the first decelerating;performing a second decelerating of the particles of the particle beamlets after deflecting the particle beamlets; andallowing the particles of the particle beamlets to be incident on an object surface after performing the second decelerating.31. The method of claim 30 , further comprising performing a first converging of the particle beam before deflecting the particle beamlets;wherein the first converging is performed before forming the plurality of ...

Ion source

In an ion source (1) for use with an ion implant device comprising: an ionization chamber (5) defined by a plurality of side walls defining an ionization volume (16), one (13) of said side walls including an ion extraction aperture (37) for enabling an ion beam to be extracted from said ionization chamber (16) along a predetermined axis defining an ion beam axis; and a gas source (2) in fluid communication with said ionization chamber (16); an electron source (12) for producing an electron beam for ionizing the gas in said ionization chamber (16); said electron source (12) has an emitter (33) external to the ionization volume (16) and one (13) of said sidewalls (13) includes an electron entrance aperture , said emitter (33) configured relative to said aperture to cause an electron beam (32) to be directed across the ionization chamber (16) and ionize said gas by direct electron impact ionization by energetic electrons ...

Techniques for reducing an electrical stress in an acceleration/deceleration system

CERAMIC STRUCTURE WITH INSULATING LAYER, CERAMIC STRUCTURE WITH METAL LAYER, CHARGED PARTICLE BEAM EMITTER, AND METHOD OF THE MANUFACTURING CERAMIC STRUCTURE WITH INSULATING LAYER

... [Problem] Disclosed is a ceramic body not prone to current leaks even when with application of high voltages. [Solution] The disclosed ceramic structure with insulating layer comprises a ceramic body (12) which contains an aluminum oxide crystalline phase and an aluminum titanate crystalline phase, and an insulating layer (15) which, provided on the surface of the ceramic body (12), contains silicon oxide as the main component. The ceramic body (12) has a first region (13a) provided with a first surface portion covered by the insulating layer (15) and a second region (13b) arranged outside of the first region (13a) and having a surface resistivity of 1x106-1x109Ω/□. The surface resistivity of the first region (13a) is higher than that of the second region (13b).

Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical to element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is ...

Ion implantation ion source, system and method

An ion source for an ion implantation system includes a vaporizer for producing a process gas; an electron source for generating an electron beam to ionize the process gas within a ionization chamber. The ionization chamber includes an extraction aperture for extracting an ion beam. The ion source, in accordance with the preset invention, is configured to be able to be retrofit into the design space of existing ion sources in, for example, Bernas source-based ion implanters.

Objective lens with large field deflection system and homogeneous large area secondary electron extraction field

A method of noncontact testing and an electron optical system includes an electron source for producing a high energy electron beam, a retarding field objective lens system for receiving and focussing the high energy electron beam to produce a focussed low energy electron beam, and a magnetic deflector for deflecting the focussed low energy electron beam to the sample, thereby to expose the sample to the low energy electron beam, and simultaneously maintaining a predetermined spot size of the beam. The retarding field objective lens system includes a device for retarding electrons in the low energy electron beam directed to the sample and for accelerating electrons, emitted by the sample upon being irradiated by the low energy electron beam.

Scanning electron microscope with objective lens below sample stage

An immersion objective lens is configured below a stage such that multiple detectors can be configured above sample for large beam current application, particularly for defect inspection. Central pole piece of the immersion objective lens thus can be provided that a magnetic monopole-like field can be provided for electron beam. Auger electron detector thus can be configured to analyze materials of sample in the defect inspection.

Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

A particle-optical arrangement, comprising: at least one charged-particle source 329 for generating at least one beam 309 of charged particles, at least one multi-aperture plate 313 having a plurality of apertures formed in the plate, wherein the plurality of apertures being arranged in a first pattern, wherein a plurality of charged-particle beamlets 3 is formed from the beam of charged particles downstream of the aperture plate; and a first focusing lens 303 providing a focusing field in a region between the charged-particle source and the multi-aperture plate; wherein the beam of charged particles is a divergent beam 311 in a region immediately upstream of the multi-aperture plate.

Ladungsteilchenstrahl-Vorrichtung und Mustermessvorrichtung

Ladungsteilchenstrahl-Vorrichtung, enthaltend eine Abtastungs-Ablenkvorrichtung (4, 1006) für eine Abtastung mit einem aus einer Ladungsteilchenquelle (1) emittierten Ladungsteilchenstrahl (2), einen Detektor (8, 1007) zum Erfassen des auf der Grundlage der Abtastung mit dem Ladungsteilchenstrahl (2) bezüglich einer Probe (6) erhaltenen Ladungsteilchens und eine Berechnungsvorrichtung (1009) zum Erzeugen einer Signalkurve auf der Grundlage einer Ausgabe des Detektors (8) und zum Berechnen einer auf der Probe (6) gebildeten Musterabmessung unter Verwendung der Signalkurve, wobei die Berechnungsvorrichtung (1009) einen sich auf ein auf der Probe (6) gebildetes Muster beziehenden Indexwert aus mindestens einem ersten, durch die Abtastung mit dem Ladungsteilchenstrahl (2) einer ersten Auftreffenergie erhaltenen Messergebnis und einem zweiten, durch die Abtastung mit dem Ladungsteilchenstrahl (2) einer zweiten Auftreffenergie erhaltenen Messergebnis berechnet, das erste Messergebnis und das ...

리본 이온빔의 에너지 변경 시스템 및 이온 주입 시스템

... 일부 국면에 있어서, 개시하는 이온 주입 시스템은 리본 이온빔을 발생시키기 위한 이온원과, 리본 이온빔의 세로 치수를 따른 전류 밀도를 조정하여 전류 밀도 프로파일이 원하는 균일성을 나타내는 것을 확실하게 하는 적어도 하나의 보정 장치를 포함한다. 이온 주입 시스템은, 이온빔을 성형하고 엔드 스테이션으로 유도하여 기판에 입사시키기 위한 분석 마그넷, 정전 편향기 및 집속 렌즈 등의 다른 요소를 더 포함할 수 있다. 일부 실시형태에 있어서, 본 개시는 기판의 직경보다 큰 세로 치수를 갖는 공칭상 1차원의 리본빔을 발생시켜, 이온이 기판에 고도의 세로 방향의 프로파일 균일성을 갖는 상태로 주입되는 것을 가능하게 한다.

PARTICLE-OPTICAL SYSTEMS AND ARRANGEMENTS AND PARTICLE-OPTICAL COMPONENTS FOR SUCH SYSTEMS AND ARRANGEMENTS

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity. 1. A particle-optical component comprising:at least one multi-aperture plate having a plurality of apertures formed therein, each for manipulating particles of a charged particle beamlet passing therethrough;wherein the multi-aperture plate comprises plural conductive layer portions arranged substantially in a single plane, wherein plural apertures are formed in each of the plural conductive layer portions, and wherein a resistant gap is formed between adjacent conductive layer portions.2. The particle-optical component according to claim 1 , wherein the component is configured such that adjacent conductive layer portions are at different electric potentials.3. The particle-optical component according to claim 1 , further comprising at least one voltage source for supplying predetermined voltages to the plural conductive layer portions.4. The particle-optical component according to claim 1 , further comprising at least one resistor electrically ...

Ion implantation ion source, system and method

Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx<+>; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx<+>; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing ...

Apparatus and method for controlled particle beam manufacturing

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Ladungsteilchenstrahl-Vorrichtung und Mustermessvorrichtung

Der Zweck der vorliegenden Erfindung ist, eine Ladungsteilchenstrahl-Vorrichtung bereitzustellen, welche fähig ist, die dreidimensionale Struktur einer Probe ohne Auswirkung auf die Ladung der Probe vorherzusagen. Die vorliegende Erfindung stellt eine Ladungsteilchenstrahl-Vorrichtung bereit, welche dadurch gekennzeichnet ist, dass man einen ersten Abstand (dt1) zwischen der Spitze und der Grundlinie einer ersten, auf der Grundlage einer Bestrahlung mit einem Ladungsteilchenstrahl einer ersten Auftreffenergie erhaltenen Signalkurve und einen zweiten Abstand (dt2) zwischen der Spitze und der Grundlinie einer zweiten, auf der Grundlage einer Bestrahlung mit einem Ladungsteilchenstrahl einer von der ersten Auftreffenergie verschiedenen zweiten Auftreffenergie erhaltenen Signalkurve erhält und den Abstand zwischen der Spitze und der Grundlinie bei einer von der ersten und der zweiten Auftreffenergie verschiedenen Auftreffenergie (zum Beispiel null) auf der Grundlage der Extrapolation des ersten ...

Ion irradiation of a target at very high and very low kinetic ion energies

Ion implantation system and method of in-situ plasma cleaning

Energy filter element for ion implantation systems for the use in the production of wafers

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.

Ion implantation systems

An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.

SYSTEMS AND METHODS FOR PARTICLE PULSE MODULATION

Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses. 1. A method for modulating a particle pulse , the method comprising:A) propagating the particle pulse at a velocity v along a first direction; andB) propagating an electromagnetic pulse along a second direction at an oblique angle θ with respect to the first direction in a laboratory frame of reference so as to cause the electromagnetic pulse to at least partially overlap with the particle pulse, the electromagnetic pulse having an intensity profile with a minimum along at least one line passing through a center of the electromagnetic pulse,wherein the oblique angle θ is based at least in part on the velocity v of the particle pulse.2. The method of claim 1 , wherein the oblique angle θ is substantially equal to arc tan(1/(γβ)) claim 1 , β=(v/c) claim 1 , γ=(1−β) claim 1 , and c is a speed of light in a vacuum.3. The method of claim 1 , wherein the particle pulse comprises at least one of a plurality of charged particles or a plurality of polarizable neutral particles.4. The method of claim 1 , wherein the electromagnetic pulse comprises a Hermite- ...

Ion beam apparatus and method employing magnetic scanning

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially ...

Ion beam irradiation system for ion implantation

Irradiation system that comprises a beam generation source (1), a mass analysis device (3), a beam transformer, a deflector (7) for scanning which swings the beam reciprocally, a beam parallelizing device (10,29), an acceleration/deceleration device (11,12), and an energy filtering device (18), and a hybrid angular energy filter (18) generating both electric and magnetic fields to ajust trajectories is provided as the energy filtering device, along with a pair of multi-surface energy slit units (19,19') each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

Partikelstrahlsystem und Verfahren zum Betreiben eines Partikelstrahlsystems

Die Erfindung betrifft ein Partikelstrahlsystem (1) und ein Verfahren zum Betreiben desselben. Das Partikelstrahlsystem (1) weist eine erste Partikelstrahlsäule (3) (z. B. Elektronenstrahlsäule) und eine zweite Partikelstrahlsäule (5) (z. B. Ionenstrahlsäule) auf. In einem ersten Betriebsmodus des Partikelstrahlsystems (1) ist eine Endkappe (61) mit einer darin angeordneten Öffnung (63) außerhalb eines Strahlgangs (22) eines ersten Partikelstrahls (21) (z. B. Elektronenstrahl) angeordnet und in einem zweiten Betriebsmodus des Partikelstrahlsystems (1) ist die Endkappe (61) so angeordnet, dass der Strahlengang (22) des ersten Partikelstrahls (21) die Öffnung (63) der Endkappe (61) durchsetzen kann und dass von dem Arbeitsbereich (53) ausgehende Sekundärpartikel die Öffnung (63) der Endkappe (61) durchsetzend zu einem Detektor (39) im Inneren der ersten Partikelstrahlsäule (3) gelangen können. Während das Partikelstrahlsystem (1) in dem ersten Betriebsmodus ist, wird ein Bild eines in dem ...

Microscope System, Method for Operating a Charged-Particle Microscope

A method of operating a charged-particle microscope, the method comprising: recording a first image of a first region of an object in a first setting; recording a second image of a second region of the object using the charged-particle microscope in a second setting; reading a third image of a third region using the charged-particle microscope, wherein the first and second regions are contained at least partially within the third region; displaying a representation of the first image at least partly within the displayed third image, wherein the representation of the first image includes a first indicator which is indicative of the first setting; displaying a representation of the second image at least partly within the displayed third image, wherein the representation of the second image includes a second indicator which is indicative of the second setting, and wherein the displayed second indicator is different from the displayed first indicator.

Photocathode high-frequency electron-gun cavity apparatus

A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity ( 1 ), a photocathode ( 8, 15 ), a laser entering port ( 9 ), a high-frequency power input coupler port ( 10 ), and a high-frequency resonant tuner ( 16 ). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell ( 5 ) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.

Charged particle detector

A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

Textured Silicon Liners In Substrate Processing Systems

Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

Ion Beam Line

In one aspect, an ion implantation system is disclosed, which comprises a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, and an electrostatic bend disposed downstream of the deceleration system for causing a deflection of the ion beam. The electrostatic bend includes three tandem electrode pairs for receiving the decelerated beam, where each electrode pair has an inner and an outer electrode spaced apart to allow passage of the ion beam therethrough. Each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the middle electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the middle electrode pair. 1. An ion implantation system , comprising:a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2,an electrostatic bend disposed downstream of said deceleration system for causing a deflection of the ion beam,said electrostatic bend comprising:a first electrode pair disposed downstream of the deceleration system for receiving said decelerated beam, said first electrode pair having an inner and an outer electrode spaced apart to allow passage of the ion beam therebetween,a second electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow the passage of the ion beam therebetween, andan end electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow the passage of the ion beam therebetween,wherein said electrode pairs are configured to be independently biased.2. The ion implantation system of claim 1 , wherein each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at ...

Conductive beam optic containing internal heating element

Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.

DETECTION SYSTEMS IN SEMICONDUCTOR METROLOGY TOOLS

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system , a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time. 1. A metrology tool , comprising:a particle generation system configured to remove a particle from a sample;a local electrode configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode;a particle capture device configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture;a position detector configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle; anda processor configured to identify the removed particle based on the flight time.2. The metrology tool of claim 1 , wherein the particle capture device is positioned between the sample and the local electrode to enclose a top portion of the sample claim 1 , a bottom portion of the local electrode claim 1 , and the region between the sample and the local electrode.3. The metrology tool of claim 2 , wherein the particle capture device is not in physical contact with the top portion and the bottom portion.4. ...

ENERGY FILTER ELEMENT FOR ION IMPLANTATION SYSTEMS FOR THE USE IN THE PRODUCTION OF WAFERS

A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam. 1implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device, the implantation device comprising a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, andwherein the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.. A method of doping a wafer, comprising: The present application is a Continuation of U.S. patent application Ser. No. 17/036,966, filed on Sep. 29, 2020, which is a Continuation of U.S. patent application Ser. No. 16/090,521, filed on Oct. 1, 2018, which is a 371 of International application PCT/EP2017/058018, filed April 4, 2017, which claims priority of DE 10 2016 106 119.0, filed Apr. 4, 2016. The priority of these applications is hereby claimed and these applications are incorporated herein by reference.The invention relates to an implantation arrangement comprising an energy filter (implantation filter) for ion implantation and its use and to an implantation method.By means of ion implantation, it is possible to achieve the doping or production of defect profiles, in any desired material such as semiconductor material (silicon, silicon carbide, gallium nitride) or optical material (LiNbO) with predefined depth profiles in the depth range of a few nanometers to several 100 micrometers. It is desirable in particular to produce depth profiles which are characterized by a wider depth distribution than that of a doping ...

IN-SITU PLASMA CLEANING OF PROCESS CHAMBER COMPONENTS

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component. 1. An ion implantation system , comprising:an ion source configured to form an ion beam;a beam-line component; anda gas source configured to supply a gas to the beam-line component,wherein the gas source is configured to etch a deposit residing on a surface of the beam-line component via a reaction of the deposit with the gas.2. The ion implantation system of claim 1 , wherein the gas source comprises an etchant gas.3. The ion implantation system of claim 1 , wherein the beam-line component is an electrostatic filter (EF).4. The ion implantation system of claim 1 , wherein the gas source is configured to supply the gas to a chamber portion of the beam-line component.5. The ion implantation system of claim 1 , wherein the gas comprises atomic or molecular species containing H claim 1 , He claim 1 , N claim 1 , O claim 1 , F claim 1 , Ne claim 1 , Cl claim 1 , Ar claim 1 , Kr claim 1 , and Xe claim 1 , or combinations thereof.6. The ion implantation system of claim 1 , wherein the gas comprises NF claim 1 , O claim 1 , a mixture of Ar and F claim 1 , or combinations thereof.7. The ion implantation system of claim 1 , the gas source is configured ...

HIGH-CURRENT ION IMPLANTER AND METHOD FOR CONTROLLING ION BEAM USING HIGH-CURRENT ION IMPLANTER

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens. 1. An ion implantation system , comprising:an electrostatic lens receiving an ion beam, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line; anda power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.2. The ion implantation system of claim 1 , further comprising a plasma flood gun positioned between the electrostatic lens and a wafer claim 1 , wherein the plasma flood gun and the wafer are oriented at an angle relative to the ion beam line.3. The ion implantation system of claim 2 , wherein the wafer is grounded claim 2 , and wherein a mass analyzer and a collimator along the ion beam line are at a positive potential.4. The ion implantation system of claim 3 , wherein the ...

METHOD OF MANUFACTURING A CHARGED PARTICLE DETECTOR

The invention relates to a method of manufacturing a charged particle detector, comprising the steps of providing a sensor device, such as an Active Pixel Sensor (APS). Said sensor device at least comprises a substrate layer and a sensitive layer. The method further comprises the step of providing a mechanical supporting layer and connecting said mechanical supporting layer to said sensor device. After connection, the sensitive layer is situated in between said substrate layer and said mechanical supporting layer. By connecting the mechanical supporting layer, it is possible to thin said substrate layer for forming said charged particle detector. The mechanical supporting layer forms part of the manufactured detector. The detector can be used in a charged particle microscope, such as a Transmission Electron Microscope for direct electron detection. 1. A method of manufacturing a charged particle detector , comprising the steps of:providing a sensor device, wherein said sensor device comprises a substrate layer, and a sensitive layer;providing a mechanical supporting layer and connecting said mechanical supporting layer to said sensor device in such a way that the sensitive layer is situated in between said substrate layer and said mechanical supporting layer;thinning said substrate layer for forming said charged particle detector.2. A method according to claim 1 , comprising the step of using an adhesive for connecting said mechanical supporting layer to said sensor device.3. A method according to claim 1 , comprising the step of connecting said mechanical supporting layer directly to said sensitive layer.4. A method according to claim 1 , wherein the sensor device comprises a passivation layer on top of said sensitive layer.5. A method according to claim 4 , comprising the step of connecting said mechanical supporting layer to said passivation layer.6. A method according to claim 1 , wherein said mechanical supporting layer comprises a low-Z material.7. A method ...

Method and apparatus for directing a neutral beam

The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.

ENERGY FILTER ELEMENT FOR ION IMPLANTATION SYSTEMS FOR THE USE IN THE PRODUCTION OF WAFERS

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate. 1. An implantation device for implanting ions in a target substrate , the device comprising:a filter frame,a filter held by the filter frame, the filter being configured to be irradiated by an ion beam passing through the filter, anda collimator structure, which is arranged on the filter or is arranged in the transmitted beam after the filter or is arranged on the target substrate.2. The implantation device of claim 1 , wherein the collimator structure is arranged on the filter claim 1 , and wherein the collimator structure is attached to the filter by the use of an adhesive or by bonding claim 1 , or wherein the collimator structure is formed integrally with the filter.3. The implantation device of claim 2 , wherein the collimator structure is arranged downstream from the filter with respect to a direction of the ion beam.4. The implantation device of claim 3 , wherein the collimator structure is arranged on a structured side of the filter.5. The implantation device of claim 1 , wherein the filter frame is held in a filter holder.6. The implantation device of claim 5 , wherein the collimator structure is arranged on the filter holder in the transmitted beam after the filter.7. The implantation device of claim 1 , wherein the collimator structure comprises a plurality of collimator units arranged in a predetermined pattern.8. The implantation device of claim 7 , wherein the collimator units form a lamellar structure or a lattice in a top view.9. The implantation device of claim 7 , wherein the collimator units are rectangular claim 7 , circular claim 7 , ...

METHODS, SYSTEMS AND APPARATUS FOR ACCELERATING LARGE PARTICLE BEAM CURRENTS

Systems and methods for accelerating large particle beam currents in an electrostatic particle accelerator are provided. A system may include a process ion source that is configured to emit ions, a particle accelerator and a target. The particle accelerator may include multiple conductive electrodes that are serially arranged to define a particle path between the process ion source and the target and multiple accelerator tubes arranged to further define the particle path between the process ion source, ones of the conductive electrodes and the target. 1. A system comprising:a process ion source that is configured to emit ions;a particle accelerator; anda target, a conductive electrode that includes an interior space and that is configured to be charged to a high-voltage electrical potential;', 'a first charging device that is configured to deliver a charging current to the conductive electrode to charge the conductive electrode to a given polarity and a given magnitude;', 'a second charging device that is configured to generate a voltage stabilizing current to the conductive electrode that corresponds to an ion current of the process ion source that is within the interior space of the conductive electrode; and', 'an accelerator tube positioned between the process ion source and the target and that includes a particle receiving end that is galvanically coupled to the conductive electrode and a particle exit end that is opposite the particle receiving end and that is galvanically coupled to a negative ion or electron source, and, 'wherein the particle accelerator compriseswherein the particle accelerator accelerates the ions emitted from the process ion source to produce accelerated ions that bombard the target.2. The system according to claim 1 , wherein the conductive electrode comprises a hollow metal shell claim 1 , andwherein the negative ion or electron source comprises an earth ground.3. The system according to claim 1 , wherein the accelerator tube comprises ...

Electron Beam Device

The present invention provides an electron beam device that achieves high spatial resolution and high luminance, while remaining insusceptible to the effects of external disturbance. The present invention relates to an electron beam device, wherein, between, e.g., an electron source for generating an electron beam and an objective lens for focusing the electron beam onto a sample, a high voltage beam tube is disposed close to the electron source and a low voltage beam tube is disposed close to the objective lens. This makes it possible to achieve high luminance while maintaining spatial resolution, even with an SEM that is provided with a type of objective lens that actively leaks a magnetic field onto a sample. 1. An electron beam device includingan electron source for generating an electron beam, andan objective lens for focusing the electron beam onto a sample, the device comprising:a first beam tube capable of setting a voltage close to the electron source, and a second beam tube capable of setting a voltage different from the first beam tube close to the objective lens between the electron source and an undersurface of the objective lens; andan input device capable of selecting a mode in which the voltage of the first beam tube becomes higher than the voltage of the second beam tube.2. The electron beam device according to claim 1 ,wherein the input device can select a mode in which the voltage of the first beam tube becomes the same as the voltage of the second beam tube.3. The electron beam device according to claim 1 ,wherein the objective lens is a semi-in-lens type lens or a single-pole lens type lens which leaks a magnetic field onto the sample's side.4. The electron beam device according to claim 3 ,wherein an out-lens type objective lens which does not leak the magnetic field onto the sample's side is provided in addition to the semi-in-lens type or the single-pole lens type objective lens.5. The electron beam device according to claim 4 ,wherein the ...

SCANNING ION MICROSCOPE AND SECONDARY PARTICLE CONTROL METHOD

The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image. 1. A scanning ion microscope comprising:an ion source;a specimen stage configured to hold a specimen;an ion optical system configured to cause ions emitted from the ion source converge on the specimen and make deflection of the converged ions to a given position on the specimen;an ion controller configured to control the ion optical system;a secondary particle detector configured to detect a secondary particle emitted from the specimen; andan image processing unit configured to form an image in which by a signal from the secondary particle detector corresponds to the deflection of the converged ions, and store the image in a storage unit and displays the image on a display unit; wherein the scanning ion microscope further comprises:a support member, which is electrically-conductive, configured to support a thin film which is irradiated with the ions, is disposed between the ion optical system and the specimen; anda potential control unit configured to control a first electric potential, which is an electric potential of the support member.2. The scanning ion microscope according to claim 1 , further comprising an electrode potential control unit configured to control a second electric potential claim 1 , which is an electric potential of an electrode that is disposed between the thin film and the specimen claim 1 , the electrode ...

CHARGED PARTICLE BEAM DEVICE AND POWER SUPPLY DEVICE

The invention provides a power supply device and a charged particle beam device capable of reducing noise generated between a plurality of voltages. The charged particle beam device includes a charged particle gun configured to emit a charged particle beam, a stage on which a sample is to be placed, and a power supply circuit configured to generate a first voltage and a second voltage that determine energy of the charged particle beam and supply the first voltage to the charged particle gun. The power supply circuit includes a first booster circuit configured to generate the first voltage, a second booster circuit configured to generate the second voltage, and a switching control circuit configured to perform switching control of the first booster circuit and the second booster circuit using common switch signals.

APPARATUS AND TECHNIQUES FOR DECELERATED ION BEAM WITH NO ENERGY CONTAMINATION

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage. 1. An ion implantation system , comprising:an ion source to generate an ion beam;a substrate stage disposed downstream of the ion source;a deceleration stage including a component to deflect the ion beam, the deceleration stage disposed between the ion source and substrate stage; anda gas source, the gas source to provide hydrogen gas or helium gas to the deceleration stage,wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.2. The ion implantation system of claim 1 , wherein the deceleration stage comprises a curved shape claim 1 , wherein the deceleration stage does not provide a line of sight path for the ion beam from an entrance to an exit of the deceleration stage.3. The ion implantation system of claim 1 , comprising a port to transport the hydrogen gas or the helium gas directly into the deceleration stage.4. The ion implantation of claim 1 , the deceleration stage comprising a partial pressure of hydrogen or helium of at least 5×10Torr.5. The ion implantation system of claim 1 , the gas source comprising a plurality of ports to provide hydrogen gas or helium gas to the ion beam claim 1 , wherein at least one port of the plurality of ports is disposed in the deceleration stage.6. The ion implantation system of claim 1 , the gas source comprising a local hydrogen generator.7. The ion implantation system of claim 6 , the gas source comprising an electrolytic hydrogen generator.8. The ion implantation system of claim 1 , ...

METHOD OF ENHANCING THE ENERGY AND BEAM CURRENT ON RF BASED IMPLANTER

Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece. 1. A high energy ion implantation system , comprising:an ion beam source configured to generate an ion beam comprising a plurality of ions along a beamline;a mass analyzer configured to mass analyze the ion beam;a first RF accelerator configured to receive the ion beam from the mass analyzer, wherein the plurality of ions are at an initial energy and an initial charge state, wherein the first RF accelerator is further configured to accelerate the plurality of ions to a first energy at the initial charge state;an electron stripper positioned downstream of the first RF accelerator and configured to receive the plurality of ions at the initial charge state and first energy and to convert the plurality of ions to a plurality of charge states at the first energy;a charge selector positioned downstream of the electron stripper and configured to select a final charge state at the first energy from the plurality of charge states of the plurality of ions;a second RF accelerator positioned downstream of the charge selector and configured to accelerate the plurality of ions to a final energy spectrum at the final charge state; anda final energy filter positioned downstream of the second RF accelerator and configured to purify the plurality of ...

ION IMPLANTATION APPARATUS, BEAM PARALLELIZING APPARATUS, AND ION IMPLANTATION METHOD

An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens. 1. An ion implantation apparatus comprising:a beam parallelizing unit comprising an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction; anda power supply unit configured to operate the beam parallelizing unit under one of a plurality of energy settings, whereinthe plurality of energy settings includes a first energy setting suitable for transport of a low energy ion beam, and a second energy setting suitable for transport of a high energy ion beam,the power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting and to generate a potential difference in at least the deceleration lens under the first energy setting, anda curvature of the deceleration lens is smaller than a curvature of the acceleration lens.2. The ion implantation apparatus according to claim 1 , whereinthe power supply unit applies a second acceleration voltage to the acceleration lens and applies no potential difference in the deceleration lens under the second energy setting ...

BIAS ELECTRODES FOR TANDEM ACCELERATOR

A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece. 1. A tandem accelerator , comprising:a plurality of input electrodes;a plurality of output electrodes;a terminal, disposed between an innermost electrode of the plurality of input electrodes and an innermost electrode of the plurality of output electrodes, the terminal biased at a first voltage;a stripper tube disposed in the terminal, having an inlet proximate the plurality of input electrodes, an outlet proximate the plurality of output electrodes, and an injection conduit for introduction of a stripper gas; anda first bias electrode disposed between the outlet of the stripper tube and the innermost electrode of the plurality of output electrodes, the first bias electrode biased at a second voltage, more positive than the first voltage.2. The tandem accelerator of claim 1 , wherein the first bias electrode is disposed within the terminal.3. The tandem accelerator of claim 1 , wherein the first bias electrode is disposed outside of the terminal.4. The tandem accelerator of claim 1 , wherein an outermost electrode of the plurality of input electrodes is grounded claim 1 , and each adjacent input electrode is ...

SCANNING ELECTRON MICROSCOPE WITH COMPOSITE DETECTION SYSTEM AND SPECIMEN DETECTION METHOD

A scanning electron microscope with a composite detection system and a specimen detection method. The scanning electron microscope includes a composite objective lens system including an immersion magnetic lens and an electro lens, configured to focus an initial electron beam to a specimen to form a convergent beam spot; a composite detection system located in the composite objective lens system; and a detection signal amplification and analysis system. A magnetic field of the immersion magnetic lens is immersed in the specimen; the electro lens is configured to decelerate the initial electron beam and focus the initial electron beam onto the specimen, and separate BSEs from a transmission path of an X-ray; the composite detection system is located below an inner pole piece of the immersion magnetic lens, is located above the control electrode, and includes an annular BSE detector and an annular X-ray detector that have a same axis center. 1. A scanning electron microscope with a composite detection system , comprising:a composite objective lens system comprising an immersion magnetic lens and an electro lens, and configured to focus an initial electron beam to a specimen to form a convergent beam spot;a composite detection system located in the composite objective lens system; anda detection signal amplification and analysis system, whereina magnetic field of the immersion magnetic lens is immersed in the specimen, and an opening direction of a pole piece is directed towards the specimen;the electro lens comprises the composite detection system, the specimen, a control electrode, and a voltage source, and is configured to decelerate the initial electron beam and focus the initial electron beam onto the specimen, and separate Back-scatter Electrons (BSEs) from a transmission path of an X-ray;the composite detection system is located below an inner pole piece of the immersion magnetic lens, is located above the control electrode, and comprises an annular BSE detector ...

Charged particle beam system and method of operating the same

A charged particle beam system comprises a particle beam source having a particle emitter at a first voltage, a first electrode downstream of the particle beam source at a second voltage, a multi-aperture plate downstream of the first electrode, a second electrode downstream of the multi-aperture plate at a third voltage, a third electrode downstream of the second electrode at a fourth voltage, a deflector downstream of the third electrode, an objective lens downstream of the deflector, a fourth electrode downstream of the deflector at a fifth voltage; and an object mount at a sixth voltage. Voltage differences between the first, second, third, fourth and fifth voltages have same and opposite signs.

Compensated Location Specific Processing Apparatus And Method

An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing. 1. An apparatus for processing a workpiece with a beam , comprising:a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam;a scanner for translating the workpiece through the particle beam;a scanner control circuit configured to control at least one scan property of the scanner; anda beam control circuit configured to control the beam flux of the particle beam according to a duty cycle for the particle beam;a control system including a controller coupled with the scanner control circuit and beam control circuit, the control system configured for processing parametric data associated with at least one attribute of at least a portion of the workpiece for use in corrective processing of the workpiece;the controller configured to instruct the scanner control circuit and instruct the beam control circuit in corrective processing of the workpiece to alter at least one workpiece attribute;the controller further configured to controllably vary the duty cycle through the beam control circuit for addressing a limitation in controlling a scan property of the scanner and thereby expand the dynamic range of the beam processing.2. The apparatus of claim 1 , wherein the particle beam includes a charged particle beam or an un-charged particle beam.3. The apparatus of claim 2 , where ...

Multi-energy ion implantation

In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.

ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source. 1. An ion implantation apparatus comprising:an ion source configured to generate an ion beam;a scanner configured to change an irradiation position with the ion beam on an irradiation target;a first electrode configured to accelerate an ion in the ion beam; anda controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.2. The apparatus of claim 1 , further comprising a plurality of second electrodes provided on a side of a subsequent stage of the first electrode and configured to accelerate the ion in the ion beam claim 1 ,wherein the controller changes the energy of the ion beam according to the irradiation position by controlling voltages to be applied to the plurality of second electrodes for each of the second electrodes.3. The apparatus of claim 2 , wherein the plurality of second electrodes are disposed to be adjacent to each other in a direction parallel to a front surface of the irradiation target.4. The apparatus of claim 2 , wherein the plurality of second electrodes are disposed to be shifted from each other in a direction parallel to a front surface of the irradiation target.5. The apparatus of claim 1 , further comprising a second electrode provided on a side of a subsequent stage of the first electrode and configured to accelerate the ion in the ...

Particle-Optical Systems and Arrangements and Particle-Optical Components for such Systems and Arrangements

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

Charged Particle Beam Device and Analysis Method

A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen. 1. A charged particle beam device comprising:a charged particle beam source;an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source;a bias voltage applying unit that applies a bias voltage to the specimen; andan analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.2. The charged particle beam device according to claim 1 , wherein the analysis unit obtains a difference between the first spectrum and the second spectrum and extracts a signal component of the secondary electrons based on the difference.3. The charged particle beam device according to claim 1 , further comprising a deflector that scans the specimen with the primary ...

Method and Apparatus to Eliminate Contaminant Particles from an Accelerated Neutral Atom Beam and Thereby Protect a Beam Target

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target. 1. In the method of ANAB processing of target substrate surfaces , the improvement comprising providing a contaminant particle elimination step in an ANAB process of deriving a neutral beam comprising energetic monomers from a GCIB , which has been subjected to a primary (first) ionization step and accelerated under conditions subject to entraining contaminant particles in the neutral beam and providing an assembly for deflecting or blocking contaminant particles therein , if any , such that no paths of the neutral beam to the target substrate surface to be processed exist other than through the assembly.2. The improved method of wherein the step of deflecting or blocking includes a secondary electron ionization step which is implemented without detrimentally influencing the primary ionization by employing positive offset voltages and a surrounding ground screen to prevent electrons from escaping.3. The improved method of wherein a retarding field is employed in the assembly to block ionized particles from travelling to the target substrate surface.4. The improved method of wherein an electrostatic deflector is employed in the assembly to remove ionized particles from the path to the target substrate surface.5. A method of processing a substrate target surface for one or more of etching claim 1 , smoothing planarization or other modification of the substrate target surface claim 1 , comprising the steps of:(a) forming gas cluster ions by a primary (first) ionization step in a reduced pressure ambient in a chamber,(b) accelerating the gas cluster ions to form an accelerated gas cluster ion beam (GCIB) along a beam path ...

Electron emission tube, electron irradiation device, and method of manufacturing electron emission tube

An electron emission tube includes a housing in which an internal space is provided and which keeps the internal space in vacuum, an electron source that is arranged on a first end side in one direction of the housing and that generates an electron, a gate valve that is arranged on a second end side in the one direction of the housing and that can switch the second end side between an open state and a blocked state, and a partition part that is placed between the electron source and the gate valve and that divides the internal space into a first region including the electron source and a second region including the gate valve. The partition part includes an electron-permeable membrane that transmits an electron.

Multi-electron-beam imaging apparatus with improved performance

A multi-electron beam imaging apparatus is disclosed herein. An example apparatus at least includes an electron source for producing a precursor electron beam, an aperture plate comprising an array of apertures for producing an array of electron beams from said precursor electron beam, an electron beam column for directing said array of electron beams onto a specimen, where the electron beam column is configured to have a length less than 300 mm, and where the electron beam column comprises a single individual beam crossover plane in which each of said electron beams forms an intermediate image of said electron source, and a single common beam crossover plane in which the electron beams in the array cross each other.

MEDIUM CURRENT RIBBON BEAM FOR ION IMPLANTATION

A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA. 1. A method of setting up a medium current ribbon beam for ion implantation , comprising:providing an ion source fed with a process gas and a support gas; andadjusting the ion source with a desired ratio of the process gas and the support gas to control the source plasma density of a process ion beam of the ion source.2. The method of setting up a medium current ribbon beam for ion implantation according to claim 1 , further comprising: adjusting the source plasma density to match a source extraction voltage and a source extraction gap.3. A method of setting up a medium current ribbon beam for ion implantation comprising:operating at least one current limiting device located downstream of an ion source to control the source plasma density of a process ion beam of the ion source.4. The method of setting up a medium current ribbon beam for ion implantation according to claim 3 , wherein the current limiting device operates by mechanically limiting passage of the process ion beam by means of a variable slit or aperture.5. The method of setting up a medium current ribbon beam for ion implantation according to claim 3 , further comprising: setting a mass analyzer to select the mass of process ions in the process ion beam.6. The method of setting up a medium current ribbon beam for ion implantation according ...

ELECTRODE ASSEMBLY HAVING PIERCE ELECTRODES FOR CONTROLLING SPACE CHARGE EFFECTS

An electrode assembly for accelerating or decelerating an ion beam is provided. In one example, the electrode assembly may include a pair of exit electrodes adjacent to an exit opening of the electrode assembly. The pair of exit electrodes may be positioned on opposite sides of a first plane aligned with a first dimension of the exit opening. A pair of pierce electrodes may be adjacent to the pair of exit electrodes. The pair of pierce electrodes may be positioned on opposite sides of a second plane aligned with a second dimension of the exit opening. The second dimension of the exit opening may be perpendicular to the first dimension of the exit opening. Each pierce electrode may include an angled surface positioned such that a dimension of the angled surface forms an angle of between 40 and 80 degrees with respect to the second plane. 1. An electrode assembly for accelerating or decelerating an ion beam , the electrode assembly comprising:a first ion beam path extending from a first opening of the electrode assembly to a second opening of the electrode assembly, wherein the first opening and the second opening are disposed on opposite sides of the electrode assembly;a pair of exit electrodes defining a portion of the first ion beam path adjacent to the second opening, the pair of exit electrodes positioned on opposite sides of a first plane aligned with a first dimension of the second opening; anda pair of pierce electrodes defining a portion of the first ion beam path adjacent to the pair of exit electrodes, the pair of pierce electrodes positioned on opposite sides of a second plane aligned with a second dimension of the second opening, wherein:the second dimension of the second opening is perpendicular to the first dimension of the second opening;each pierce electrode of the pair of pierce electrodes has an angled surface facing the first ion beam path; andthe angled surface of each pierce electrode is positioned such that a first dimension of the angled ...

CONTROLLING AN ION BEAM IN A WIDE BEAM CURRENT OPERATION RANGE

Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. The system further includes a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply. In an exemplary approach, the lens is electrically insulated from the terminal suppression electrode and independently driven, thus allowing for an increased beam current operation range. 1. An accelerator/decelerator to control an ion beam , the accelerator/decelerator comprising:a first electrode coupled to a terminal, the first electrode configured to conduct the ion beam through an aperture of the first electrode and to apply a first potential to the ion beam from a first voltage supply;a lens adjacent the first electrode, the lens coupled to the terminal and electrically insulated from the first electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply, the second potential applied independently from the first potential;a second electrode configured to receive the ion beam from the lens; anda third electrode assembly configured to receive the ion beam from the second electrode2. The accelerator/decelerator of claim 1 , further comprising a fourth electrode disposed between the lens and the second electrode.3. The accelerator/decelerator of claim 2 , wherein the fourth electrode is a terminal electrode.4. ...

Energy filter for use in the implantation of ions into a substrate

The energy filter for use in the implantation of ions into a substrate is micropatterned for establishing, in the substrate, a dopant depth profile and/or defect depth profile brought about by the implantation, and has two or more layers or layer sections which are arranged one after another in the height direction of the energy filter. The energy filter also has a plurality of cavities each of which arranged between at least two layers or layer sections, with interior walls bounding the cavities and joining the at least two layers or layer sections to one another.

Charged-Particle-Beam Device and Specimen Observation Method

An electron microscope has a large depth of focus in comparison with an optical microscope. Thus, information is superimposed on one image in the direction of depth. Therefore, it is necessary to accurately specify the three-dimensional position and density of a structure in a specimen so as to observe the three-dimensional structure of the interior of the specimen by using the electron microscope. Furthermore, a specimen that is observed with the optical microscope on a slide glass is not put into a TEM device of the related art. Thus, performing three-dimensional internal structure observation with the electron microscope on a location that is observed with the optical microscope requires very cumbersome preparation of the specimen. By controlling a vector parameter that defines the interrelationship between a primary charged particle beam and the specimen and by irradiation with the primary charged particle beam with a plurality of different vector parameters, images of transmitted charged particles of the specimen that correspond to each of the vector parameters are obtained. Irradiation with the primary charged particle beam is performed on the specimen that is arranged either directly or through a predetermined member on a detector which detects charged particles transmitted through or scattered by the interior of the specimen. 1. A charged particle beam device comprising:a charged particle optical lens tube that irradiates a specimen with a primary charged particle beam;a specimen stage in which a specimen base that retains the specimen is arranged in an attachable and detachable manner; anda control unit that controls a vector parameter which defines the interrelationship between the primary charged particle beam and the specimen,wherein the specimen base is configured to include a detector that detects charged particles which are transmitted through or scattered by the interior of the specimen, andby irradiation with the primary charged particle beam with a ...

Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Charged Particle Beam Device

When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way for focus adjustment is to use a change in magnetic field of an objective lens. However, since responsiveness of the change in magnetic field is poor, throughput reduces. A charged particle beam device includes: an electron source configured to generate a primary electron beam; an objective lens configured to focus the primary electron beam; a deflector configured to deflect the primary electron beam; a detector configured to detect a secondary electron or a reflection electron generated from a sample by irradiation of the primary electron beam; an electrode having a hole through which the primary electron beam passes; a voltage control power supply configured to apply a negative voltage to the electrode; and a retarding voltage control power supply configured to generate an electric field, which decelerates the primary electron beam, on the sample by applying the negative voltage to the sample, wherein the charged particle beam device performs focus adjustment while an offset between the voltage applied to the electrode and the voltage applied to the sample is being kept constant.

HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD

A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit. 1. A high energy ion implanter comprising:a high energy multistage linear acceleration unit;a beamline component arranged upstream or downstream of the high energy multistage linear acceleration unit to form a focus point of an ion beam; anda variable aperture device disposed at the focus point or a vicinity thereof to adjust a beam width of the ion beam in a direction perpendicular to a focusing direction of the ion beam at the focus point in order to control an implanting beam current.2. The high energy ion implanter according to claim 1 , wherein the beamline component is arranged so that the focus point is formed upstream of the high energy multistage linear acceleration unit claim 1 ,wherein the variable aperture device is disposed downstream of the beamline component so that the ion beam having the beam width adjusted in the direction perpendicular to the focusing direction as a result of passing through the variable aperture device is supplied to the high energy multistage linear acceleration unit.3. The high energy ion implanter according to claim 1 , wherein the beamline component is a mass analyzer comprising a mass analysis slit claim 1 , and the variable aperture device is disposed immediately downstream of the mass analysis slit.4. The high energy ion implanter according to claim 1 , further comprising a control device that adjusts the beam width in the direction perpendicular to the ...

Ion implanter and ion implantation method

Provided is an ion implanter including an ion source that generates ions, an extraction unit that generates an ion beam by extracting the ions from the ion source and accelerating the ions, a linear acceleration unit that accelerates the ion beam extracted and accelerated by the extraction unit, an electrostatic acceleration/deceleration unit that accelerates or decelerates the ion beam emitted from the linear acceleration unit, and an implantation processing chamber in which implantation process is performed by irradiating a workpiece with the ion beam emitted from the electrostatic acceleration/deceleration unit.

ION IMPLANTER AND ELECTROSTATIC QUADRUPOLE LENS DEVICE

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port. 1. An ion implanter comprising:a high energy multistage linear acceleration unit for accelerating an ion beam,wherein the high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline, a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction in which the beamline extends while the beamline is interposed between the plurality of lens electrodes facing each other, and disposed at an interval in a circumferential direction perpendicular to both the axial direction and the radial direction,', 'an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes, and including a beam incident port opening in the axial direction, and', 'a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes, and including a beam exiting port opening in the axial ...

Scanning Electron Microscope

This scanning electron microscope is provided with: a deceleration means that decelerates an electron beam () when the electron beam is passing through an objective lens; and a first detector () and a second detector () that are disposed between the electron beam and the objective lens and have a sensitive surface having an axially symmetric shape with respect to the optical axis of the electron beam. The first detector is provided at the sample side with respect to the second detector, and exclusively detects the signal electrons having a high energy that have passed through a retarding field energy filter (A). When the distance between the tip () at the sample side of the objective lens and the sensitive surface of the first detector is L and the distance between the tip at the sample side of the objective lens and the sensitive surface of the second detector is L, then L/L≦5/9. As a result, when performing low-acceleration observation using a deceleration method by means of a scanning electron microscope, it is possible to detect signal electrons without the effect of shading in a magnification range of a low magnification on the order of hundreds of times to a high magnification of at least 100,000×. Also, it is possible to highly efficiently detect backscattered electrons, of which the amount generated is less than that of secondary electrons. 1. A scanning electron microscope comprising:an electron source configured to generate an electronic beam acting as a probe;an aperture configured to limit a diameter of the electronic beam;a sample stand mounted with a sample to which the electronic beam is irradiated;an electron lens including an objective lens configured to converge the electronic beam to a surface of the sample;a deceleration means configured to decelerate the electronic beam having passed the objective lens as the electronic beam nears the sample;a deflector configured to scan the electronic beam on a sample; andat least two detectors configured to ...

Multi-beam system for high throughput ebi

A scanning charged particle beam device configured to image a specimen is described. The scanning charged particle beam device includes a source of charged particles, a condenser lens for influencing the charged particles, an aperture plate having at least two aperture openings to generate at least two primary beamlets of charged particles, at least two deflectors, wherein the at least two deflectors are multi-pole deflectors, a multi-pole deflector with an order of poles of 8 or higher, an objective lens, wherein the objective lens is a retarding field compound lens, a beam separator configured to separate the at least two primary beamlets from at least two signal beamlets, a beam bender, or a deflector or a mirror configured to deflect the at least two signal beamlets, wherein the beam bender is a hemispherical beam bender or beam bender having at least two curved electrodes, and at least two detector elements.

DRAWING APPARATUS, DRAWING METHOD, AND METHOD FOR FABRICATING ARTICLE

A drawing apparatus, and one or more methods, of the present invention include a data generation unit which generates drawing data representing amounts of irradiation of a beam to a plurality of unit regions on a substrate, and a beam controller which controls the beam based on a clock signal in a constant speed interval and in at least one of an acceleration interval and a deceleration interval of a stage driven while holding the substrate. The data generation unit generates drawing data based on driving data and a clock signal commonly used in the constant speed interval and in at least one of the acceleration interval and the deceleration interval. The beam controller draws a pattern on the substrate based on the drawing data. 1. A drawing apparatus comprising:a data generation unit configured to generate drawing data representing amounts of irradiation of a beam to a plurality of unit regions on a substrate; anda beam controller configured to control the irradiation of the beam based on a clock signal in a constant speed interval and in at least one of an acceleration interval and a deceleration interval of a stage which is driven while holding the substrate,wherein the data generation unit generates the drawing data based on driving data of the stage and the clock signal which is commonly used in the constant speed interval and in at least one of the acceleration interval and the deceleration interval, and the beam controller draws a pattern on the substrate using the drawing data.2. The drawing apparatus according to claim 1 , whereinthe irradiation amounts are represented by a combination of irradiation data and non-irradiation data, andthe data generation unit generates the drawing data using a larger amount of the non-irradiation data for the unit regions drawn in at least one of an acceleration interval and a deceleration interval than the non-irradiation data for the unit regions in the constant speed interval.3. The drawing apparatus according to claim 1 ...

CIRCULAR ACCELERATOR AND PARTICLE BEAM THERAPY APPARATUS

One embodiment of a particle circular accelerator includes: a beam deflector for beam injections, bending electromagnets that causes the beam injected from the beam deflector for beam injections to circulate so as to form a circulation orbit, orbit adjusting electromagnets for injected beams that shift the position of each injected beam relative to the center of the circulation orbit of the beam, quadrupole electromagnets and sextupole electromagnets that adjust their respective quantities of magnetic excitation at the time of a beam extraction so as to extract a beam in a resonant region off a stable reason of beams and a beam deflector for beam extractions that takes out the beam extracted from the resonant region to the outside. The circular accelerator injects beams from the inner side thereof and emits beams to the outer side thereof. 1. A circular accelerator comprising:a beam deflector for receiving beam injections and deflecting the beam;beam bending electromagnets for forming a circulation orbit by causing the beam injected from the beam deflector for beam injections to circulate;orbit adjusting electromagnets for adjusting orbit of an injected beam adapted to shift the position of each injected beam relative to center of the circulation orbit of the beam;beam extraction electromagnets adapted to adjust their respective quantities of magnetic excitation at time of extraction of a charged particle beam and operate to draw out a charged particle beam in a resonant region located off a stable region of charged particle beams; anda beam deflector for beam extractions adapted to draw out the beam extracted from the resonant region to outside;the circular accelerator being adapted to inject the beam from inner side and extract the beam to outer side of the circular accelerator.2. The circular accelerator according to claim 1 , further comprising:orbit adjusting electromagnets adapted to bring the orbit of a beam to be extracted closer to the outer side of the ...

Focused Ion Beam Low kV Enhancement

The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

Method for inspecting a specimen and charged particle multi-beam device

A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; correcting a field curvature with at least two electrodes, wherein the at least two electrodes include aperture openings; directing the primary charged particle beamlets with a lens towards an objective lens; guiding the primary charged particle beamlets through a deflector array arranged within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlets through a coma free point of the objective lens; and focusing the primary charged particle beamlets on separate locations on the specimen with the objective lens.

STRUCTURE ANALYSIS METHOD USING A SCANNING ELECTRON MICROSCOPE

A structure analysis method using a scanning electron microscope includes irradiating a sample with an electron beam having a first landing energy to obtain a first image at a first depth of the sample and accelerating the electron beam to have a second landing energy higher than the first landing energy to obtain a second image at a second depth of the sample. 1. A structure analysis method using a scanning electron microscope , comprising:irradiating a sample with an electron beam having a first landing energy to obtain a first image at a first depth of the sample; andaccelerating the electron beam to have a second landing energy higher than the first landing energy to obtain a second image at a second depth of the sample.2. The structure analysis method of claim 1 ,wherein the irradiating of the sample with the electron beam includes scanning the sample along two-dimensional coordinates.3. The structure analysis method of claim 2 ,wherein the first image is a frame unit image obtained at the first depth, and the second image is a frame unit image obtained at the second depth; andthe method further includes obtaining a three-dimensional image using the first and second images.4. The structure analysis method of claim 3 ,wherein the obtaining of the three-dimensional image includes laminating the first and second images to correspond to the first and second depths.5. The structure analysis method of claim 1 ,wherein the first and second images are images obtained by collecting electronic signals emitted from the sample by the electron beam applied to the sample.6. The structure analysis method of claim 5 ,wherein the first image is a dot unit image at the first depth, and the second image is a dot unit image at the second depth; andthe method further includes measuring a change of the electronic signals using the first and second images and analyzing a change of the material constituting the sample at the first and second depths.7. The structure analysis method of ...

ION IMPLANTER AND METHOD OF CONTROLLING ION IMPLANTER

A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution. 1. An ion implanter comprising:an ion beam generating unit that includes an ion source, an extraction electrode, and a mass analyzer, a mass analyzing magnet that applies a magnetic field to ions extracted from the ion source by the extraction electrode to deflect the ions,', 'a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and', 'a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies at least one of a magnetic field and an electric field to the ion beam directed toward the mass analyzing slit to adjust the convergence or divergence of a ion beam, and, 'wherein the mass analyzer includes'}the mass analyzer changes a focal point of the ion beam, which passes through the mass analyzing slit, in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.2. The ion implanter according to claim 1 ,wherein the mass analyzer defocuses the ion, which passes through the mass analyzing slit, with the lens device so that the focal point of the ion beam is present on a downstream side of the ...

ELECTOSTATIC FILTER AND METHOD FOR CONTROLLING ION BEAM PROPERTIES USING ELECTROSTATIC FILTER

An apparatus is provided. The apparatus may include a main chamber; an entrance tunnel having a propagation axis extending into the main chamber along a first direction; an exit tunnel, connected to the main chamber and defining an exit direction. The entrance tunnel and the exit tunnel may define a beam bend of at least 30 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit aperture, wherein the electrode assembly comprises a lower electrode, disposed on a first side of the beam path, and a plurality of electrodes, disposed on a second side of the beam path, the plurality of electrodes comprising at least five electrodes. 1. An apparatus , comprising:a main chamber;an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber along a first direction;an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend, the beam bend being at least 30 degrees therebetween; andan electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel,wherein the electrode assembly comprises a lower electrode, disposed on a first side of the beam path, and a plurality of electrodes, disposed on a second side of the beam path, the plurality of electrodes comprising at least five electrodes.2. The apparatus of claim 1 , further comprising a voltage assembly claim 1 , connected to the electrode assembly claim 1 , the voltage assembly arranged to change a set of potentials applied to the electrode assembly claim 1 , from a first configuration claim 1 , where no electrodes of the plurality of electrodes are set at ground potential claim 1 , to a second configuration where at least one electrode of the set of electrodes is set at ground potential.3. The apparatus of claim 2 , wherein in the second ...

Cold stripper for high energy ion implanter with tandem accelerator

A cold stripper for a high-energy ion implanter system is provided. The cold stripper including a stripper tube having a hollow cavity, a first aperture in the stripper tube to admit an ion beam of positively charged ions into the hollow cavity and a second aperture in the stripper tube to discharge the ion beam from the hollow cavity, a gas pump coupled to the hollow cavity to introduce a gas into the hollow cavity, one or more cooling passages in the stripper tube, and a coolant pump coupled to the one or more cooling passages to circulate a coolant through the one or more cooling passages.

Resonator coil having an asymmetrical profile

Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

Ion source and method for making same

An articles includes: an ion source configured to provide a first ion beam that has a first brightness; and a cooler configured to receive the first ion beam and to produce a second ion beam from the first ion beam, the second ion beam including a second brightness that is greater than the first brightness. A process for cooling includes receiving a first ion beam that includes a first brightness in a cooler, and the cooler includes a first mirror and a second mirror disposed opposingly to the first mirror; receiving a first laser beam in the cooler; receiving a second laser beam in the cooler; transmitting the first laser beam and the second laser beam through the first ion beam to decrease an emittance of the first ion beam; reflecting the first laser beam from the first mirror and the second laser beam from the second mirror; and transmitting, after being reflected, the first laser beam and the second laser beam through the first ion beam to cool the first ion beam and to decrease the emittance of the first ion beam to produce a second ion beam that includes a second brightness that is greater than the first brightness

Charged Particle Beam Device and Electrostatic Lens

To provide a charged particle beam device capable of preventing generation of geometric aberration by aligning axes of electrostatic lenses with high accuracy even when center holes of respective electrodes which constitute the electrostatic lens are not disposed coaxially. The charged particle beam device according to the invention includes an electrostatic lens disposed between an acceleration electrode and an objective lens, wherein at least one of the electrodes which constitutes the electrostatic lens is formed of a magnetic body, and two or more magnetic field generating elements are disposed along an outer periphery of the electrode. 1. A charged particle beam device which emits a charged particle beam to a sample , the charged particle beam device comprising:a charged particle source which emits the charged particle beam;an acceleration electrode which accelerates the charged particle beam emitted by the charged particle source;an objective lens which focuses the charged particle beam on the sample;an electrostatic lens which is disposed between the acceleration electrode and the objective lens; anda deflector which is disposed between the acceleration electrode and the electrostatic lens, whereinat least one of electrodes which constitutes the electrostatic lens is formed of a magnetic body, andthe charged particle beam device further comprising:a magnetic field generating element which is magnetically connected to the electrode and generates a magnetic field having a function of deflecting the charged particle beam, whereintwo or more magnetic field generating elements are disposed along an outer periphery of the electrode.2. The charged particle beam device according to claim 1 , whereinthe magnetic field generating element is magnetically connected to the electrode by being in contact with and attached to the electrode.3. The charged particle beam device according to claim 2 , whereinthe magnetic field generating element includes a magnetic bar attached ...

Charged Particle Beam Device, and Observation Method and Elemental Analysis Method Using the Same

A charged particle beam device capable of easily discriminating the energy of secondary charged particles is realized. The charged particle beam device includes a charged particle source, a sample stage on which a sample is placed, an objective lens that irradiates the sample with a charged particle beam from the charged particle source, a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam, a detector that detects the secondary charged particles deflected by the deflector, a sample voltage control unit that applies a positive voltage to the sample or the sample stage, and a deflection intensity control unit that controls the intensity with which the deflector deflects the secondary charged particles. 1. A charged particle beam device comprisinga charged particle source;a sample stage on which a sample is placed;an objective lens that irradiates the sample with a charged particle beam from the charged particle source;a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam;a detector that detects the secondary charged particles deflected by the deflector;a sample voltage control unit that applies a positive voltage to the sample or the sample stage; anda deflection intensity control unit that controls an intensity with which the deflector deflects the secondary charged particles.2. The charged particle beam device according to claim 1 , whereinthe detector detects the secondary charged particles in an energy range determined by the positive voltage applied to the sample or the sample stage by the sample voltage control unit and the intensity of deflecting the secondary charged particles controlled by the deflection intensity control unit.3. The charged particle beam device according to claim 2 , further comprising:an image formation control unit that forms an image based on the secondary charged particles detected by the detector.4. The ...

Particle beam system and method for operating a particle beam system

A particle beam system includes first and second particle beam columns. In a first operating mode, an end cap having an opening therein is outside a beam path of a first particle beam. In a second operating mode, the beam path of the first particle beam can extend through the opening of the end cap so that secondary particles coming from a work region can pass through the opening of the end cap to a detector in the interior of the first particle beam column. While the particle beam system is in the first operating mode, an image of an object arranged in the work region is recorded using the first particle beam column. While the particle beam system is in the second operating mode, the object is processed using a second particle beam.

Inspection Equipment

Inspection equipment frequency transforms a mirror electron image with respect to position coordinates, calculates a value of a frequency plane origin or a value at a vicinity of the frequency plane origin as a first measurement value, and calculates a second measurement value by totalizing values of image intensities in a certain area, the image intensities having been obtained through normalization by the origin value or origin-vicinity value and the frequency transform. The inspection equipment automatically controls the voltage of a wafer holder based on the first and second measurement values. 1. Inspection equipment , comprising:an irradiation optical system to irradiate an area including a field of view on a wafer with an electron beam emitted from an electron source;a voltage application unit to apply a controlled negative voltage to the wafer or a wafer holder holding the wafer;a mirror-electron imaging optical system to capture a mirror electron image by, with the voltage applied to the wafer or the wafer holder, having an image formed by electrons reflected from the wafer;a calculation unit that frequency-transforms the mirror electron image with respect to position coordinates and calculates a value of a frequency plane origin or a value at a vicinity of the frequency plane origin as a first measurement value and that also calculates a second measurement value by totalizing values of image intensities in a certain area the image intensities having been obtained through normalization by the origin value or origin-vicinity value and the frequency transform;a control unit that, based on the first measurement value and the second measurement value, outputs to the voltage application unit a signal to control the voltage applied by the voltage application unit; anda defect detection unit that detects a defect of the wafer using the mirror electron image obtained at the voltage controlled by the control unit.2. The inspection equipment according to claim 1 , ...

COMPENSATED LOCATION SPECIFIC PROCESSING APPARATUS AND METHOD

An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing. 1. An apparatus for processing a workpiece with a beam , comprising:a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam;a scanner for translating the workpiece through the particle beam;a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner; anda beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.2. The apparatus of claim 1 , wherein the particle beam includes a charged particle beam or an un-charged particle beam.3. The apparatus of claim 2 , where the particle beam includes a neutral beam claim 2 , a gas cluster beam claim 2 , a gas cluster ion beam claim 2 , an ion beam claim 2 , an electron beam claim 2 , or combinations thereof.4. The apparatus of claim 1 , wherein the vacuum chamber includes plural beam-lines for forming multiple particle beams.5. The apparatus of claim 1 , wherein the scan property includes a scan velocity claim 1 , a scan path claim 1 , a scan acceleration claim 1 , a scan location claim 1 , or any combination of two or more thereof.6. The apparatus of claim 1 , further comprising:a controller programmably configured to ...

HIGH-VOLTAGE ENERGY-DISPERSIVE SPECTROSCOPY USING A LOW-VOLTAGE SCANNING ELECTRON MICROSCOPE

A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus that includes a scanning electron microscope, an x-ray detector, and an auxiliary acceleration voltage source. The scanning electron microscope includes a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy. The auxiliary acceleration voltage source is to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy. At the final beam energy, the electron beam is capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy. 1. A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus , comprising:a scanning electron microscope comprising a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy;an x-ray detector; andan auxiliary acceleration voltage source to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy, the electron beam at the final beam energy capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy.2. The spectroscopy apparatus of claim 1 , in which the x-ray detector comprises a silicon drift detector.3. The spectroscopy apparatus of claim 2 , in which the silicon drift detector is part of a silicon drift detector die mounted on the layered electron beam column.4. The spectroscopy apparatus of claim 3 , in which the silicon drift detector die is mounted on a surface of the layered electron beam column facing the sample holder.5. The spectroscopy apparatus of claim 3 , in which:the layered electron beam column ...

ACCELERATOR SYSTEM FOR MINERAL COMPONENT ANALYSIS, SYSTEM AND METHOD FOR MINERAL COMPONENT ANALYSIS

The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray. 1. An accelerator system for mineral component analysis , comprising:an electron gun for generating an electron beam;an accelerating tube for accelerating the electron beam emitted by the electron gun to a predetermined energy;a composite target for receiving the electron beam to generate a radioactive ray on the composite target; anda shielding mechanism for shielding the radioactive ray.2. The accelerator system for mineral component analysis of further comprising:a microwave system for providing a microwave electromagnetic field to the accelerating tube to accelerate the electron beam to the predetermined energy.3. The accelerator system for mineral component analysis of claim 1 , wherein the predetermined energy of the electron beam after acceleration of the accelerating tube is 8.5 MeV-14 MeV claim 1 , and wherein an energy of the electron beam after acceleration of the accelerating tube is continuously adjustable.4. The accelerator system for mineral component analysis of claim 1 , wherein the radioactive ray produced by the composite target comprises X-ray.5. The accelerator system for mineral component analysis of claim 1 , whereinthe shielding mechanism comprises a first shielding layer and a second shielding layer;material of the first shielding layer is a lead material and a tungsten material, and material of the second shielding layer is a boron-containing polyethylene material.6. A system for mineral component analysis claim 1 , comprising: an ...

Charged Particle Beam Apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector ( and ) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit ( and ) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions. 1. A method of positioning a visual field at a desired position on a specimen by using a visual field movement deflector that changes an arrival position of a beam emitted from a charged particle source , the method comprising:deflecting the beam to a desired arrival position by using the visual field movement deflector;adjusting a deflection condition of the visual field movement deflector so as to cancel an inclination of an incident beam when the beam is deflected to the desired arrival position; andadjusting an aberration correction unit disposed between the charged particle source and the visual field movement deflector so as to cancel off-axis chromatic aberration generated according to an amount of visual field movement by the visual field movement deflector and off-axis chromatic aberration generated by setting the deflection condition of the visual field movement deflector so as to cancel the inclination of the incident beam.2. A charged particle beam apparatus comprising:an objective lens configured to focus a beam emitted from a charged particle source and irradiate a specimen;a visual field movement ...

Electron Beam 3D Printing Machine

An electron beam 3D printing machine ( 1 ), comprising a chamber ( 2 ) for generating and accelerating an electron beam and an operating chamber ( 3 ) in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber ( 2 ) for generating and accelerating an electron beam houses means ( 4 ) for generating an electron beam and means ( 6 ) for accelerating the generated electron beam, while the operating chamber ( 3 ) houses at least one platform ( 16 ) for depositing the metal powder, metal powder handling means ( 18 ) and electron beam deflection means ( 15 ). The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

Objective Lens System for Fast Scanning Large FOV

The device includes a beam source for generating an electron beam, a beam guiding tube passed through an objective lens, an objective lens for generating a magnetic field in the vicinity of the specimen to focus the particles of the particle beam on the specimen, a control electrode having a potential for providing a retarding field to the particle beam near the specimen to reduce the energy of the particle beam when the beam collides with the specimen, a deflection system including a plurality of deflection units situated along the optical axis for deflecting the particle beam to allow scanning on the specimen with large area, at least one of the deflection units located in the retarding field of the beam, the remainder of the deflection units located within the central bore of the objective lens, and a detection unit to capture secondary electron (SE) and backscattered electrons (BSE). 1. An objective system for focusing a charged particle beam , comprising:an objective lens for focusing the beam onto a specimen;a beam guiding tube through the objective for the beam;a deflection device arranged in the objective for deflecting the beam to a first distance; anda scanning deflection unit for deflecting the beam to a second distance less than the first distance.2. The system according to claim 1 , wherein the objective lens comprises a magnetic lens and an electrostatic lens claim 1 , the beam guiding tube is an electrode for controlling the kinetic energy of the beam claim 1 , and the deflection device comprises a first magnetic deflector for deflecting the beam and a second magnetic deflector for swinging the compound field of objective lens.3. The system according to claim 2 , wherein the electrostatic lens comprises a lower end of the beam guiding tube claim 2 , a control electrode disposed below the beam guiding tube claim 2 , and a stage.4. The system according to claim 3 , wherein the scanning deflection unit arranged in the objective lens comprises a third ...

Charged Particle Beam Device

Signal electrons with high energy that pass near an optical axis, for example, backscattered electrons or secondary electrons in a booster optical system, can be detected. Therefore, there is provided a charged particle beam device including: a charged particle beam source configured to generate a charged particle beam; an objective lens configured to focus the charged particle beam to a sample; and a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, in which a detection surface of the first charged particle detecting element is disposed on a center axis of the objective lens. 1. A charged particle beam device comprising:a charged particle beam source configured to generate a charged particle beam;an objective lens configured to focus the charged particle beam to a sample; anda first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, whereina detection surface of the first charged particle detecting element is disposed on an center axis of the objective lens.2. The charged particle beam device according to claim 1 , further comprising:a first charged particle beam aperture disposed on an optical axis of the charged particle beam and having an opening portion, whereinthe first charged particle detecting element is disposed on a center position of the opening portion of the first charged particle beam aperture.3. The charged particle beam device according to claim 2 , whereinthe first charged particle beam aperture is an annular aperture having a shielding portion that shields the charged particle beam on the center position of the opening portion, andthe first charged particle detecting element is disposed in ...

ELECTRON BEAM IRRADIATION DEVICE

An electron beam irradiation device that can irradiate an object in water with an electron beam is provided. An acceleration tube includes an acceleration space in which an electron beam generated by an electron gun is accelerated and an irradiation port through which the electron beam accelerated in the acceleration space can be irradiated to the outside. Hydrogen gas supply means can supply the acceleration space with hydrogen gas at a predetermined pressure. The hydrogen gas supplied to the acceleration space by the hydrogen gas supply means is emitted from the irradiation port and the electron beam irradiated from the irradiation port passes through the hydrogen gas emitted from the irradiation port 1. An electron beam irradiation device comprising:an electron gun that generates an electron beam;an acceleration tube including an acceleration space provided for accelerating the electron beam generated by the electron gun, and an irradiation port that can irradiate the electron beam accelerated in the acceleration space to the outside; andhydrogen gas supply means configured to supply the acceleration space with hydrogen gas at a predetermined pressure,wherein the hydrogen gas supplied to the acceleration space by the hydrogen gas supply means is emitted from the irradiation port, and the electron beam irradiated from the irradiation port passes through the hydrogen gas emitted from the irradiation port.2. The electron beam irradiation device according to claim 1 , wherein claim 1 , when the irradiation port is placed in water claim 1 , the hydrogen gas can be emitted toward an object placed at a predetermined position in the water and the object can be irradiated with the electron beam.3. The electron beam irradiation device according to claim 2 , further comprising:current generation means configured to generate a current,wherein the object is a liquid, a gas or plasma; andwherein a current generated by the current generation means traps the object at the ...

APPARATUS AND METHOD TO CONTROL ION BEAM CURRENT

An apparatus to control an ion beam for treating a substrate. The apparatus may include a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam, a ground electrode assembly disposed downstream of the fixed electrode. The ground electrode assembly may include a base and a ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position. 1. An apparatus to control an ion beam for treating a substrate , comprising:a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam;a ground electrode assembly disposed downstream of the fixed electrode, the ground electrode assembly comprising:a base; anda ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position.2. The apparatus of claim 1 , further comprising a drive component configured to move the ground electrode between the first position and second position responsive to user input.3. The apparatus of claim 1 , further comprising a plurality of support members affixed to the base claim 1 , wherein the ground electrode further comprises a plurality of sleeves circumferentially disposed around the plurality of support members claim 1 , ...

CHARGED PARTICLE BEAM DEVICE

The present invention prevents breakage of a chip by using a simple configuration even when an extraction-electrode power source cannot apply voltage to an extraction electrode due to a malfunction, etc. This charged particle beam device is provided with: a charged particle source; an extraction electrode that extracts charged particles from the charged particle source; an extraction-electrode power source that applies voltage to the extraction electrode; an accelerating electrode for accelerating the charged particles; an accelerating power source that applies voltage to the accelerating electrode; and a diode and a resistor which are connected in series between a middle stage of the accelerating power source and the output side of the extraction-electrode power source. 1. A charged particle beam device comprising:a charged particle source;an extraction electrode configured to extract a charged particle from the charged particle source;an extraction-electrode power source configured to apply a voltage to the extraction electrode;an acceleration electrode configured to accelerate the charged particle;an acceleration power source configured to apply a voltage to the acceleration electrode; anda diode and a resistor connected in series between a middle stage of the acceleration power source and an output side of the extraction-electrode power source.2. The charged particle beam device according to claim 1 , further comprising:a power source control unit configured to control the acceleration power source and the extraction-electrode power source; andan extraction-electrode power source node switch configured to disconnect the extraction-electrode power source from a circuit, whereinthe power source control unit turns off the extraction-electrode power source node switch when a generation of an abnormality in the extraction-electrode power source is detected.3. The charged particle beam device according to claim 2 , whereinthe power source control unit turns off the ...

Charged Particle Beam Device

A purpose of the present invention is to provide a charged particle beam device that suppresses an off-axis amount when a field of view moves, said move causing an aberration, and allows large field of view moves to be carried out. In order to achieve the above-mentioned purpose, this charged particle beam device is provided with an objective lens and deflectors for field of view moves, said deflectors deflecting a charged particle beam, and is further provided with an accelerating tube positioned between the objective lens and the deflectors for field of view moves, a power source that applies a voltage to the accelerating tube, and a control device that controls the voltage to be applied to the power source in response to the deflection conditions of the deflectors for field of view moves. 1] A charged particle beam device including an objective lens that focuses a charged particle beam emitted from a charged particle source and irradiates a sample with the charged particle beam , and a deflector for moving a field of view , which deflects the charged particle beam , the device comprising:an accelerating tube that is disposed between the deflector for moving the field of view and the objective lens;a power source that applies a voltage to the accelerating tube; anda control device that controls a voltage applied to the power source according to a deflection condition of the deflector for moving the field of view.2] The charged particle beam device according to claim 1 ,wherein the accelerating tube is disposed at the same height as a front focal position of the objective lens in an ideal optical axis direction of the charged particle beam.3] The charged particle beam device according to claim 1 ,wherein the control device has a first optical mode in which the field of view is not moved by the deflector for moving the field of view or image shift of a predetermined value or less is performed, and a second optical mode in which the field of view is moved by the ...

Aberration Correcting Device for an Electron Microscope and an Electron Microscope Comprising Such a Device

The invention relates to an aberration correcting device for correcting aberrations of focusing lenses in an electron microscope. The device comprises a first and a second electron mirror, each comprising an electron beam reflecting face. Between said mirrors an intermediate space is arranged. The intermediate space comprises an input side and an exit side. The first and second electron mirrors are arranged at opposite sides of the intermediate space, wherein the reflective face of the first and second mirror are arranged facing said intermediate space. The first mirror is arranged at the exit side and the second mirror is arranged at the input side of the intermediate space. In use, the first mirror receives the electron beam coming from the input side and reflects said beam via the intermediate space towards the second mirror. The second mirror receives the electron beam coming from the first mirror, and reflects the electron beam via the intermediate space towards the exit side. The incoming electron beam passes said second mirror at a position spaced apart from the reflection position on the second mirror. At least one of the electron mirrors is arranged to provide a correcting aberration to a reflected electron beam. 128.-. (canceled)29. An aberration correcting device for correcting aberrations of an electron beam in an electron microscope , wherein the aberration correcting device comprises:a first and a second electron mirror, each comprising an electron beam reflecting face,an intermediate space, wherein the intermediate space comprises a input side for inputting the electron beam into the intermediate space, and an exit side for exiting the electron beam out of the intermediate space,wherein the first and second electron mirror are arranged at opposite sides of the intermediate space, and wherein the reflective face of the first electron mirror and the reflective face of the second mirror are arranged to face said intermediate space,wherein the first ...

BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION

A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials. 1. A dopant gas composition comprising:{'sub': 2', '3, 'a boron-containing dopant gas composition comprising diborane (B2H6) at a level ranging from about 0.1%-10%, Hranging from about 5%-15% and the balance is BF, wherein said B2H6 is selected to have a ionization cross-section higher than that of said BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active boron ions;'}wherein said boron-containing dopant gas composition increases boron ion beam current and extends ion source life in comparison to a beam current generated from boron trifluoride (BF3).2. The dopant gas composition of claim 1 , wherein said B2H6 is at about 2-5% claim 1 , said H2 is at a level ranging from about 5-10% and the balance is BF3.3. The dopant composition of claim 1 , wherein said B2H6 claim 1 , said H2 and balance BF3 is supplied from a single storage and delivery source.4. The dopant composition of claim 1 , wherein said B2H6 and BF3 are supplied in separate storage and delivery sources so as to create the boron-containing dopant composition within a chamber of said ion source.5. The dopant composition of claim 1 , wherein said boron-containing gas composition ...

Low emission cladding and ion implanter

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12 C layer, the 12 C layer having an outer surface, facing the cavity.

LOW VOLTAGE SCANNING ELECTRON MICROSCOPE AND METHOD FOR SPECIMEN OBSERVATION

A low voltage scanning electron microscope is disclosed, which includes: an electron source configured to generate an electron beam; an electron beam accelerator configured to accelerate the electron beam; a compound objective lens configured to converge the electron beams accelerated by the electron beam accelerator; a deflection device arranged between the inner wall of the magnetic lens and the optical axis of the electron beam and configured to deflect the electron beam; a detection device comprising a first sub-detection device for receiving secondary and backscattered electrons from the specimen, a second sub-detection device for receiving backscattered electrons, and a control device for changing the trajectories of the secondary electrons and the backscattered electrons; an electrostatic lens comprising the second sub-detection device, a specimen stage, and a control electrode for reducing the moving speed of the electron beam and changing the moving directions of the secondary and the backscattered electrons. 1. A low voltage scanning electron microscope system , comprising: an electron source , an electron beam accelerator , a deflection device , a detection device , a compound objective lens comprising a magnetic lens and an electrostatic lens , wherein ,the electron source is configured to generate an electron beam;the electron beam accelerator is configured to accelerate the electron beam;the compound objective lens is configured to converge the electron beam accelerated by the electron beam accelerator;the deflection device is arranged between an inner wall of the magnetic lens and an optical axis of the electron beam and is configured to deflect the electron beam accelerated by the electron beam accelerator;the detection device comprises a first sub-detection device for receiving secondary electrons and backscattered electrons generated by applying the electron beam to impinge on a specimen, a second sub-detection device for receiving the ...

Charged Particle Beam Device and Method for Adjusting Position of Detector of Charged Particle Beam Device

In a charged particle beam device including a deceleration optical system, a change in a deceleration electric field and an axis shift due to a structure between an objective lens and a sample are prevented to reduce adverse effects on an irradiation system and detection system. The charged particle beam device includes an electron source, an objective lens configured to focus a probe electron beam from the electron source on the sample, an acceleration electrode configured to accelerate the probe electron beam, a first detector provided in the acceleration electrode, a deceleration electrode configured to form a deceleration electric field for the probe electron beam with the acceleration electrode, the probe electron beam being configured to pass through an opening of the deceleration electrode, and a second detector inserted between the deceleration electrode and the sample. The second detector includes an opening portion larger than the opening of the deceleration electrode, and a sensing surface is provided around the opening portion. 1. A charged particle beam device comprising:an electron source;an objective lens configured to focus a probe electron beam from the electron source on a sample;an acceleration electrode configured to accelerate the probe electron beam;a first detector provided in the acceleration electrode;a deceleration electrode configured to form a deceleration electric field for the probe electron beam with the acceleration electrode, the probe electron beam being configured to pass through an opening of the deceleration electrode; anda second detector inserted between the deceleration electrode and the sample, whereinthe second detector includes an opening portion larger than the opening of the deceleration electrode, and a sensing surface is provided around the opening portion.2. The charged particle beam device according to claim 1 , whereina minimum inner diameter of the second detector is equal to or greater than a sum of an opening ...

PARTICLE BEAM IRRADIATION APPARATUS AND PARTICLE BEAM THERAPY SYSTEM

A scanning power source that outputs the excitation current for a scanning electromagnet and an irradiation control apparatus that controls the scanning power source; the irradiation control apparatus is provided with a scanning electromagnet command value learning generator that evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, that updates the command value for the excitation current, when the result of the evaluation does not satisfy a predetermined condition, so as to perform the run-through, and that outputs to the scanning power source the command value for the excitation current such that its evaluation result has satisfied the predetermined condition. 118-. (canceled)19. A particle beam irradiation apparatus comprising:a scanning electromagnet that scans a charged particle beam accelerated by an accelerator and has a hysteresis;a scanning power source that outputs an excitation current for driving the scanning electromagnet; andan irradiation control apparatus that controls the scanning power source, wherein the irradiation control apparatus has a scanning electromagnet command value learning generator that (i) has a mathematical model for generating a command value for the excitation current, (ii) evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, and (iii) updates the mathematical model, based on the result of the evaluation, (iv) accumulates experiences in the run-through, and (v) outputs to the scanning power source the command value for the excitation current to be generated, based on the accumulated experiences of the run-through, by the mathematical model.20. The particle beam irradiation apparatus according to claim 19 , wherein the scanning electromagnet command value learning generator that includes ...

SCANNING ELECTRON MICROSCOPE AND ELECTRON TRAJECTORY ADJUSTMENT METHOD THEREFOR

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens primary electron acceleration means that accelerates primary electrons primary electron deceleration means that decelerates the primary electrons and irradiates them to a sample a secondary electron deflector that deflects secondary electrons from the sample to the outside of an optical axis of the primary electrons; a spectroscope that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope. 1. A scanning electron microscope comprising:an electron source;an objective lens that converges primary electrons emitted from the electron source on a sample;primary electron acceleration means that accelerates the primary electrons and passes them through the objective lens;primary electron deceleration means that decelerates the primary electrons and irradiates them to the sample;a secondary electron deflector that deflects secondary electrons from the sample, caused from the primary electrons converged with the objective lens, to the outside of an optical axis of the primary electrons;a spectroscope for dispersion of the secondary electrons;a detector that detects secondary electrons passed through the spectroscope; anda controller that controls application voltage to at least one of the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope, with a lens formed with the objective lens, the primary electron acceleration means and the primary electron deceleration means.2. ...

APPARATUS AND TECHNIQUES FOR DECELERATED ION BEAM WITH NO ENERGY CONTAMINATION

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage. 1. An ion implantation system , comprising:an ion source to generate an ion beam;a substrate stage disposed downstream of the ion source;a deceleration stage including a component to deflect the ion beam, the deceleration stage disposed between the ion source and substrate stage; anda hydrogen source to provide hydrogen gas to the deceleration stage,wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.2. The ion implantation system of claim 1 , wherein the deceleration stage comprises a curved shape claim 1 , wherein the deceleration stage does not provide a line of sight path for the ion beam from an entrance to an exit of the deceleration stage.3. The ion implantation system of claim 1 , comprising a hydrogen port to transport the hydrogen gas directly into the deceleration stage.4. The ion implantation of claim 1 , the deceleration stage comprising a partial pressure of hydrogen of at least 5×10Torr.5. The ion implantation system of claim 1 , the hydrogen source comprising a plurality of hydrogen ports to provide hydrogen to the ion beam claim 1 , wherein at least one hydrogen port is disposed in the deceleration stage.6. The ion implantation system of claim 1 , the hydrogen source comprising a local hydrogen generator.7. The ion implantation system of claim 6 , the hydrogen source comprising an electrolytic hydrogen generator.8. The method of claim 1 , wherein the ion beam comprises boron ions having an ion energy of 50 keV ...

Method and device for implanting ions in wafers

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.

DETECTION SYSTEMS IN SEMICONDUCTOR METROLOGY TOOLS

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time. 1. A charged particle detection system , comprising:a local electrode configured to produce an attractive electric field and to direct a charged particle from a sample towards an aperture of the local electrode; wherein the first type accelerator is configured to accelerate a first velocity of the charged particle exiting the local electrode to a second velocity higher than the first velocity, and', 'wherein the second type accelerator is configured to accelerate the second velocity of the charged particle exiting the first type accelerator to a third velocity higher than the second velocity;, 'an acceleration system comprising first and second type accelerators different from each other,'}a guide system configured to create a guide field and to alter a flight path direction of the charged particle; anda position detector configured to detect two-dimensional position coordinates of the removed particle and a flight time of the charged particle.2. The charged particle detection system of claim 1 , wherein the first type accelerator includes a linear accelerator configured to supply a DC ...

Composite charged particle beam apparatus and control method thereof

Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

Scanning Electron Microscope

When a high-performance retarding voltage applying power supply cannot be employed in terms of costs or device miniaturization, it is difficult to sufficiently adjust focus in a high acceleration region within a range of changing an applied voltage, and identify a point at which a focus evaluation value is maximum. To address the above problems, a scanning electron microscope is provided including: an objective lens configured to converge an electron beam emitted from an electron source; a current source configured to supply an excitation current to the objective lens; a negative-voltage applying power supply configured to form a decelerating electric field of the electron beam on a sample; a detector configured to detect charged particles generated when the electron beam is emitted to the sample; and a control device configured to calculate a focus evaluation value from an image formed according to an output of the detector. The control device calculates a focus evaluation value when an applied voltage is changed, determines whether to increase or decrease an excitation current according to an increase or a decrease of the focus evaluation value, and supplies the excitation current based on a result of the determination. 1. A scanning electron microscope comprising:an objective lens configured to converge an electron beam emitted from an electron source;a current source configured to supply an excitation current to the objective lens;a voltage power supply configured to apply negative-voltage on a sample;a detector configured to detect charged particles generated when the electron beam is emitted to the sample; anda control device configured to calculate a focus evaluation value from an image formed according to an output of the detector,wherein the control device is configured to evaluate focus evaluation values under a combination condition of a plurality of predetermined negative-voltages and a plurality of predetermined excitation currents and determine a ...

ION MILLING SYSTEM

To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun that includes a permanent magnet and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield for reducing a leakage magnetic field from the permanent magnet to the electron microscope column is provided. 1. An ion milling system comprising:an ion gun that includes a permanent magnet and that generates ions for processing a sample; anda scanning electron microscope that observes the sample, whereinthe ion milling system includes a magnetic shield that reduces a leakage magnetic field from the permanent magnet.2. The ion milling system according to claim 1 , whereinthe ion gun includes an accelerating electrode that accelerates the ions, andthe magnetic shield is the accelerating electrode configured with a ferromagnetic material.3. The ion milling system according to claim 2 , whereinthe ion gun includes an ion gun base that holds the permanent magnet and the accelerating electrode, anda ferromagnetic material is disposed on a surface, on a side of which the accelerating electrode is disposed, of the ion gun base.4. The ion milling system according to claim 1 , whereinthe ion gun includes an accelerating electrode that accelerates the ions; and an ion gun base that holds the permanent magnet and the accelerating electrode, andthe magnetic shield is configured with a ferromagnetic material with which an outer peripheral surface of the accelerating electrode and a surface, on a side of which the accelerating electrode is disposed, of the ion gun base are covered.5. The ion milling system according to claim 1 , whereinthe ion gun includes an accelerating electrode that accelerates the ions; and an ion gun base that holds the permanent magnet and the accelerating electrode, andthe magnetic ...

INSPECTION DEVICE

An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object. 1. A photoelectron generation device comprising:a photoelectron surface generating photoelectrons by being irradiated with a light from a light source;a lens extracting the photoelectrons generated from the photoelectron surface, and accelerating the extracted photoelectrons; anda numerical aperture being passed through by the accelerated photoelectrons;wherein the accelerated photoelectrons passing through the numerical aperture are irradiated to an inspection object as a primary beam.2. The photoelectron generation device according to whereinthe lens extracts the photoelectrons generated from the photoelectron surface in the opposite direction from the light source.3. The photoelectron generation device according to further comprising:a field aperture arranged between the light source and the photoelectron surface, and being passed through by the light.4. The photoelectron generation device according to whereinthe light is irradiated to the photoelectron surface from the lens side.5. The photoelectron generation device ...

MULTI-CELL DETECTOR FOR CHARGED PARTICLES

A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers. 1. A substrate comprising:a first layer including a first region of a first conductivity type;a second layer that includes a plurality of second regions of a second conductivity type and one or more third regions of the first conductivity type, wherein the plurality of second regions are partitioned from one another by the one or more third regions; andan intrinsic layer between the first layer and the second layer, wherein the first layer is configured to receive a plurality of secondary electron beams generated from a sample surface.2. The substrate of claim 1 , wherein the first conductivity type is p-type semiconductor and the second conductivity type is n-type semiconductor claim 1 , and wherein the plurality of second regions are spaced apart from the one or more third regions.3. The substrate of claim 1 , wherein the second layer further includes an intrinsic region separating each of the plurality of second regions from the one or more third regions of the second layer.4. The substrate of claim 1 , wherein each of the plurality of second regions is surrounded by the intrinsic region in the second layer.5. The substrate of claim 1 , wherein a width of the plurality of second regions is greater than a width of the one or more third regions.6. The substrate of claim 1 , wherein the intrinsic layer ...

Charged Particle Beam Apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector ( and ) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit ( and ) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

ION IMPLANTER AND ION IMPLANTATION METHOD

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments. 1. An ion implanter comprising:a plurality of devices which are disposed along a beamline along which an ion beam is transported;a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; anda control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.2. The ion implanter according to claim 1 , wherein the control device estimates a position of at least one of neutron ray sources in the beamline claim 1 , based on measurement values of the plurality of neutron ray measuring instruments.3. The ion implanter according to claim 1 , wherein the control device estimates intensity of a neutron ray which is emitted from at least one of neutron ray sources in the beamline claim 1 , based on measurement values of the plurality of neutron ray measuring instruments.4. The ion implanter according to claim 1 , wherein at least one of the plurality of neutron ray measuring instruments is disposed in the vicinity of at least one of a slit claim 1 , a beam monitor claim 1 , and a beam dump which are provided in the beamline.5. The ion implanter according to claim 1 , wherein the control device detects abnormality of at ...

Ion implanter

An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.

PARTICLE BEAM IRRADIATION SYSTEM

An irradiation apparatus attached to a rotary gantry includes a middle housing unit and a lower housing unit. Touch sensor apparatuses are attached to a middle housing unit, and touch sensor apparatuses are attached to a lower housing unit. The touch sensor apparatus includes a cover, a pair of cover support apparatuses for attaching the cover to a support member of the middle housing unit, and a sensor unit attached to each cover support apparatus. When the cover comes into contact with a bed and moves toward the support member during rotation of the irradiation apparatus, a link such as a cover support apparatus activates the sensor unit, and a contact signal is output. The touch sensor apparatuses also function in the same manner. 1. A particle beam irradiation system comprising:an accelerator accelerating an ion beam; andan irradiation apparatus guiding the ion beam emitted from the accelerator, whereinthe irradiation apparatus includes a touch sensor apparatus detecting a force applied from a direction crossing a center axis of the irradiation apparatus.2. The particle beam irradiation system according to claim 1 , wherein the irradiation apparatus is attached to a rotary gantry.3. The particle beam irradiation system according to claim 1 , wherein the touch sensor apparatus is disposed at a tip of the irradiation apparatus.4. The particle beam irradiation system according to claim 3 , wherein the touch sensor apparatus includes a round bar-shaped contact detection unit includes a round bar-shaped contact detection unit provided on an external periphery of the tip of the irradiation apparatus.5. The particle beam irradiation system according to claim 1 , comprising:a rotary gantry attached with the irradiation apparatus; anda first touch sensor apparatus of which side surface the irradiation apparatus is located at and which is the touch sensor apparatus.6. The particle beam irradiation system according to claim 5 , wherein the first touch sensor apparatus ...

Electron Microscope and Method of Controlling Same

There is provided an electron microscope in which a crossover position can be kept constant. The electron microscope () includes: an electron source () for emitting an electron beam; an acceleration tube () having acceleration electrodes (-) and operative to accelerate the electron beam; a first electrode () operative such that a lens action is produced between this first electrode () and the initial stage of acceleration electrode (); an accelerating voltage supply () for supplying an accelerating voltage to the acceleration tube (); a first electrode voltage supply () for supplying a voltage to the first electrode (); and a controller () for controlling the first electrode voltage supply (). The lens action produced between the first electrode () and the initial stage of acceleration electrode () forms a crossover (CO) of the electron beam. The controller () controls the first electrode voltage supply () such that, if the accelerating voltage is modified, the ratio between the voltage applied to the first electrode () and the voltage applied to the initial stage of acceleration electrode () is kept constant. 1. An electron microscope comprising:an electron source for emitting an electron beam;an acceleration tube which has plural stages of acceleration electrodes stacked one above the other and which is operative to accelerate the electron beam;a first electrode placed in a stage preceding the acceleration tube and operative such that a lens action is produced between this first electrode and the initial stage of acceleration electrode of the plural stages of acceleration electrodes;an accelerating voltage supply for supplying an accelerating voltage to the acceleration tube;a first electrode voltage supply for supplying a voltage to the first electrode; anda controller for controlling the first electrode voltage supply,wherein the lens action produced between the first electrode and the initial stage of acceleration electrode forms a crossover of the electron ...

Ion implantation apparatus

An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.

SCANNING TRANSMISSION ELECTRON MICROSCOPE WITH VARIABLE AXIS OBJECTIVE LENS AND DETECTIVE SYSTEM

The present invention provides a scanning transmission electron microscope (STEM). In the STEM, a specimen is sandwiched between a variable axis objective lens and a variable axis collection lens. The axis of the collection lens varies along with the variation of the objective lens axis in a coordinated manner. The STEM of the invention exhibits technical merits such as large scanning field, high image resolution across the entire scanning field, and high throughput, among others. 1. A scanning transmission electron microscope (STEM) comprising:an electron source for emitting a primary electron beam;a detector for receiving the electron beam, wherein a reference axis is defined by the straight line connecting the electron source and the detector;a specimen plane located between the electron source and the detector, wherein the reference axis is perpendicular to the specimen plane;a first redirector that redirects the electron beam to a path not in alignment with the reference axis;a lens module comprising a variable axis objective lens and a variable axis collection lens, between which is the specimen plane, wherein the variable axis objective lens is located between the electron source and the specimen plane for focusing the electron beam redirected by said first redirector to a focusing spot on the specimen plane, and wherein the variable axis collection lens is located between the specimen plane and the detector for collecting the electron beam that has passed through the specimen plane; anda second redirector that redirects the electron beam that has been collected by the variable axis collection lens back to a path in alignment with the reference axis, before the beam reaches the detector.2. The STEM according to claim 1 , wherein the focused beam passes through the focusing spot in a direction substantially parallel to the reference axis claim 1 , or substantially perpendicular to the specimen plane.3. The STEM according to claim 1 , wherein the variable axis ...

PLASMA SOURCE AND PLASMA PROCESSING APPARATUS

A plasma source which is capable of supplying a plasma processing space with plasma in a state where gas is sufficiently ionized is a device for supplying plasma to a plasma processing space in which a process using the plasma is performed, and includes: a plasma generation chamber; an opening that allows the plasma generation chamber to communicate with the plasma processing space; a radio-frequency antenna that is a coil of less than one turn provided in a position where a radio-frequency electromagnetic field having predetermined strength required to generate plasma is able to be generated in the plasma generation chamber; voltage application electrodes in a position close to the opening in the plasma generation chamber; and a gas supply unit (pipe) that supplies plasma source gas to a position closer to the side opposite to the opening than the voltage application electrodes in the plasma generation chamber.

ION IMPLANTER, ION BEAM IRRADIATED TARGET, AND ION IMPLANTATION METHOD

An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously. 1. An ion implanter , comprising:an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide;a beamline configured to support an ion beam irradiated target; anda controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.2. The ion implanter according to claim 1 ,{'sup': 11', '10, 'wherein the nonradioactive nuclide is B or B and the generated radioactive ray is a neutron ray.'}3. The ion implanter according to claim 1 , further comprising:an accelerator which can accelerate the ion beam generated by the ion source to an ultrahigh energy higher than or equal to at least 4 MeV.4. The ion implanter according to claim 1 ,wherein the controller includesa depth profile calculator which calculates an estimated depth profile of the nonradioactive nuclides accumulated in the ion beam irradiated target,a nuclear reaction rate calculator which calculates an estimated nuclear reaction rate based on an ion beam irradiation condition including an energy of the ion beam and an irradiation amount of the ion beam per unit time and based on the estimated depth profile of the nonradioactive nuclide, anda radiation dosage calculator which ...

INDIVIDUALLY SWITCHED FIELD EMISSION ARRAYS

An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements. 1. An electron beam apparatus comprising:a substrate; a current channel region disposed at a first end of the field emitter element proximate to the substrate;', 'a donor-doped region or an acceptor-doped region disposed at a second end of the field emitter element that is different from the first end; and', 'a field emitter tip disposed proximate to the second end of the field emitter element; and, 'a plurality of field emitter elements disposed over the substrate in at least one array, each field emitter element of the plurality of field emitter elements comprisingat least one extraction gate electrode disposed proximate to the plurality of field emitter elements, to apply a potential difference proximate to at least one field emitter tip of the plurality of field emitter elements, thereby accelerating the electrons emitted from the at least one field emitter tip in a direction away from the at least one field emitter tip.2. The apparatus of claim 1 , wherein each field emitter element of the plurality of field emitter elements has an aspect ratio of height to lateral dimension of about 5:1 claim 1 , about 10:1 claim 1 , about 50:1 claim 1 , about 100:1 claim 1 , about 200:1 claim 1 , about 500:1 claim 1 , about 800:1 claim 1 , about 1000:1 claim 1 , or about 5 claim 1 ,000:1.3. The apparatus of claim 1 , ...

Systems and Methods for Particle Pulse Modulation

Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses. 1. A method for modulating a particle pulse , the method comprising:A) propagating the particle pulse at a velocity v along a first direction, the particle pulse comprising at least one of a plurality of charged particles or a plurality of polarizable neutral particles;{'sub': '1', 'B) propagating a first electromagnetic pulse along a second direction at a first oblique angle θwith respect to the first direction in a laboratory frame of reference so as to cause the first electromagnetic pulse to at least partially overlap with the particle pulse; and'}{'sub': '2', 'C) propagating a second electromagnetic pulse along a third direction at a second oblique angle θwith respect to the first direction in the laboratory frame of reference so as to cause the second electromagnetic pulse to at least partially overlap with the particle pulse,'}{'sub': 2', '1, 'wherein the second oblique angle θis based at least in part on the first oblique angle θ.'}2. The method of claim 1 , wherein the second electromagnetic pulse propagates in a plane defined by the first ...

TRIPLE MODE ELECTROSTATIC COLLIMATOR

A system includes a first electrode to receive an ion beam, a second electrode to receive the ion beam after passing through the first electrode, the first and second electrode forming an upstream gap defined by a convex surface on one of the first or second electrode and concave surface on the other electrode, a third electrode to receive the ion beam after passing through the second electrode, wherein the second and third electrode form a downstream gap defined by a convex surface on one of the second or third electrode and concave surface on the other electrode, wherein the second electrode has either two concave surfaces or two convex surfaces; and a voltage supply system to independently supply voltage signals to the first, second and third electrode, that accelerate and decelerate the ion beam as it passes through the first, second, and third electrode. 1. A method of treating a diverging ion beam , comprising;accelerating and partially collimating the diverging ion beam between a first electrode and a second electrode to create an accelerated and partially collimated ion beam; anddecelerating the accelerated and partially collimated ion beam between the second electrode and a third electrode to generate a fully collimated ion beam.2. The method of claim 1 , wherein a ratio of ion velocity of the diverging ion beam to ion velocity of the collimated ion beam is between 0.5 and 2.0.3. The method of claim 1 , further comprising:providing the first electrode with a first concave surface on an exit side of the first electrode;providing the second electrode with a first convex surface opposite the exit side of the first electrode and a second convex surface on an exit side of the second electrode; andproviding the third electrode with a second concave surface facing the exit side of the second electrode.4. The method of claim 1 , wherein the diverging ion beam comprises a first diverging ion beam claim 1 , the method further comprising:accelerating a second ...

HIGH VOLTAGE POWER SUPPLY DEVICE AND CHARGED PARTICLE BEAM DEVICE

Even in a case where a disturbance is applied from an adjacently disposed power supply circuit or the like, in order to realize a reduction in ripple, a high-voltage power supply device is configured to include a drive circuit, a transformer that boosts an output voltage of the drive circuit, a boost circuit that further boosts a voltage boosted by the transformer, a shield that covers the transformer and the boost circuit, a filter circuit that filters, smoothes, and outputs a high voltage output from the boost circuit, and an impedance loop circuit configured by connection of a plurality of impedance elements into a loop shape. A grounding point of the boost circuit, a grounding point of the shield, and a grounding point of the filter circuit are configured to be grounded via the impedance loop circuit, and this is applied to a high-voltage power supply unit that applies a high voltage to an electron gun of a charged particle beam apparatus. 1. A charged particle beam apparatus comprising:a charged-particle optical system having a detector that detects secondary charged particles generated from a sample when the sample is irradiated and scanned with a charged particle beam emitted from an electron gun;a signal processing unit that receives and processes an output signal from the charged-particle optical system, which is obtained from detection of the secondary charged particles by the detector;a high-voltage power supply unit that applies a high voltage to the electron gun;a charged-particle optical system control unit that controls the charged-particle optical system; anda control unit that controls the signal processing unit, the high-voltage source unit, and the charged-particle optical system control unit,wherein the electron gun includes an emitter that releases charged particles, a suppressor electrode that shields thermal electrons released from the emitter, and an extraction electrode and an anode electrode that extract and accelerate charged particles ...

Scanning Electron Microscope

When a high-performance retarding voltage applying power supply cannot be employed in terms of costs or device miniaturization, it is difficult to sufficiently adjust focus in a high acceleration region within a range of changing an applied voltage, and identify a point at which a focus evaluation value is maximum. To address the above problems, the invention is directed to a scanning electron microscope including: an objective lens configured to converge an electron beam emitted from an electron source; a current source configured to supply an excitation current to the objective lens; a negative-voltage applying power supply configured to form a decelerating electric field of the electron beam on a sample; a detector configured to detect charged particles generated when the electron beam is emitted to the sample; and a control device configured to calculate a focus evaluation value from an image formed according to an output of the detector. The control device calculates a focus evaluation value when an applied voltage is changed, determines whether to increase or decrease an excitation current according to an increase or a decrease of the focus evaluation value, and supplies the excitation current based on a result of the determination. 1. A scanning electron microscope comprising:an objective lens configured to converge an electron beam emitted from an electron source;a current source configured to supply an excitation current to the objective lens;a negative-voltage applying power supply configured to form a decelerating electric field of the electron beam on a sample;a detector configured to detect charged particles generated when the electron beam is emitted to the sample; anda control device configured to calculate a focus evaluation value from an image formed according to an output of the detector, whereinthe control device calculates a focus evaluation value when an applied voltage is changed, determines whether to increase or decrease an excitation current ...