Ion implantation system and ion implantation method using the same

According to the present invention, an ion implantation system capable of implanting ions into a large substrate and reducing a manufacturing cost, and an ion implantation method using the same may be provided. The ion implantation system includes a plurality of ion implantation assemblies arranged in a line, each ion implantation assembly to implant ions into a partial region of the substrate. This allows for a compact ion implantation system to implant ions into a very large substrate. The substrate moves through the ion implantation system in a first direction, turns around, and then moves back through the ion implantation system in a second and opposite direction, where ions are implanted into the substrate while the substrate is moving to in both directions. The path in the first direction can be spaced-apart from the path in the second direction to allow for two substrates to be processed simultaneously.

Inert Atmospheric Pressure Pre-Chill and Post-Heat

An ion implantation system provides ions to a workpiece positioned in a process environment of a process chamber on a sub-ambient temperature chuck. An intermediate chamber having an intermediate environment is in fluid communication with an external environment and has a cooling station and heating station for cooling and heating the workpiece. A load lock chamber is provided between the process chamber and intermediate chamber to isolate the process environment from the intermediate environment. A positive pressure source provides a dry gas within the intermediate chamber at dew point that is less than a dew point of the external environment to the intermediate chamber. The positive pressure source isolates the intermediate environment from the external environment via a flow of the dry gas from the intermediate chamber to the external environment.

Three Dimensional Metal Deposition Technique

A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.

Ion generation method and ion source

An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.

ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of BF. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use. 1. A method for enhancing operation of an ion implantation system , comprising providing for use in the ion implantation system a gas storage and dispensing vessel holding boron precursor comprising two or more boron atoms and at least one fluorine atom , wherein the boron precursor is isotopically-enriched in at least one boron isotope.2. The method of claim 1 , wherein the isotopically-enriched boron precursor comprises BF.3. The method of claim 2 , wherein said BFis isotopically enriched in B.4. The method of claim 2 , wherein said BFis isotopically enriched in B.5. The method of claim 1 , wherein the ion implantation system comprises a beamline ion implanter.6. The method of claim 5 , wherein enhancing operation of the ion implantation system comprises at least one of increased beam current claim 5 , increased ion source life claim 5 , reduced levels of deposits in the ion implantation system claim 5 , and reduced clogging of flow passages in the ion implantation system.7. The method of claim 1 , wherein the gas storage and dispensing vessel holds a storage medium for the boron precursor.8. The method of claim 7 , wherein the storage medium comprises material selected from the group consisting of physical adsorbents and ionic liquids.9. The method of claim 7 , wherein the storage medium comprises physical adsorbent.10. The method of claim 1 , wherein the gas storage and ...

METHODS FOR INCREASING BEAM CURRENT IN ION IMPLANTATION

The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source. 1. A method of increasing a beam current for implanting a non-carbon target ionic species , comprising the steps of:introducing a dopant source into an ion implanter from a delivery container;introducing an assistant species into the ion implanter from the delivery container, said assistant species comprising:(i) a lower ionization energy in comparison to an ionization energy of the dopant source;{'sup': '2', '(ii) a total ionization cross-section (TICS) greater than 2 Å;'}(iii) a ratio of bond dissociation energy (BDE) of a weakest bond of the assistant species to the lower ionization energy of the assistant species to be 0.2 or higher; and(iv) an absence of the non-carbon target ionic species;ionizing the assistant species to produce ions of the assistant species;the dopant source interacting with the assistant species whereby the dopant source undergoes assistant species ion-assisted ionization;forming a plasma containing ions;extracting a beam of the ions from the ion implanter;separating the ions to isolate non-carbon target ionic species;producing the beam current of the non-carbon target ionic species that is higher in comparison to that generated solely from the dopant source; andimplanting the non-carbon target ionic species into a substrate.2. The method of claim 1 , wherein the dopant source is in a concentration higher than that of the assistant species.3. The method of claim 1 , further comprising introducing a diluent gas into the ion implanter.4. The method of claim 1 , further comprising:operating at a predetermined arc ...

Annular cooling fluid passage for magnets

A magnet having an annular coolant fluid passage is generally described. Various examples provide a magnet including a first magnet and a second magnet disposed around an ion beam coupler with an aperture there through. The first and second magnets each including a metal core having a cavity therein, one or more conductive wire wraps disposed around the metal core, and an annular core element configured to be inserted into the cavity, wherein an annular coolant fluid passage is formed between the cavity and the annular core element. Furthermore, the annular core element may have a first diameter and a middle section having a second diameter, the second diameter being less than the first diameter. Other embodiments are disclosed and claimed.

METHODS, SYSTEMS AND APPARATUS FOR ACCELERATING LARGE PARTICLE BEAM CURRENTS

Systems and methods for accelerating large particle beam currents in an electrostatic particle accelerator are provided. A system may include a process ion source that is configured to emit ions, a particle accelerator and a target. The particle accelerator may include multiple conductive electrodes that are serially arranged to define a particle path between the process ion source and the target and multiple accelerator tubes arranged to further define the particle path between the process ion source, ones of the conductive electrodes and the target. 1. A system comprising:a process ion source that is configured to emit ions;a particle accelerator; anda target, a conductive electrode that includes an interior space and that is configured to be charged to a high-voltage electrical potential;', 'a first charging device that is configured to deliver a charging current to the conductive electrode to charge the conductive electrode to a given polarity and a given magnitude;', 'a second charging device that is configured to generate a voltage stabilizing current to the conductive electrode that corresponds to an ion current of the process ion source that is within the interior space of the conductive electrode; and', 'an accelerator tube positioned between the process ion source and the target and that includes a particle receiving end that is galvanically coupled to the conductive electrode and a particle exit end that is opposite the particle receiving end and that is galvanically coupled to a negative ion or electron source, and, 'wherein the particle accelerator compriseswherein the particle accelerator accelerates the ions emitted from the process ion source to produce accelerated ions that bombard the target.2. The system according to claim 1 , wherein the conductive electrode comprises a hollow metal shell claim 1 , andwherein the negative ion or electron source comprises an earth ground.3. The system according to claim 1 , wherein the accelerator tube comprises ...

STORAGE AND SUB-ATMOSPHERIC DELIVERY OF DOPANT COMPOSITIONS FOR CARBON ION IMPLANTATION

A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus. 1. A dopant gas composition for use in an ion implantation process , comprising:an inert diluent gas mixture comprising xenon (Xe) and hydrogen (H2), wherein the Xe and the H2 are contained in an effective amount, said effective amount being in a volume ratio of Xe:H2 from about 0.02 to about 0.20; and{'sub': '2', 'a carbon-based material contained in a volume ratio of (Xe+H):(carbon-based material) ranging from about 0.10 to about 0.30.'}2. The dopant gas composition of claim 1 , wherein the dopant gas composition is located upstream of an ion source chamber.3. The dopant gas composition of claim 1 , wherein the dopant gas composition is located in an ion source chamber.4. A method for dispensing a dopant gas composition for ion implantation comprising:introducing one or more carbon-containing dopant gases into an ion source chamber;introducing a diluent gas composition into the ion source chamber in a volume ratio of Xe:H2 from about 0.02 to about 0.20;ionizing the one or more carbon-containing dopant gas sources to produce carbon ions; andimplanting the carbon ions into a substrate.5. A method of preparing an inert diluent gas mixture suitable for use in ion implantation claim 1 , comprising:filling a sub-atmospheric delivery and storage device ...

IMPLANT MASKING AND ALIGNMENT

System and method to align a substrate under a shadow mask. A substrate holder has alignment mechanism, such as rollers, that is made to abut against an alignment straight edge. The substrate is then aligned with respect to the straight edge and is chucked to the substrate holder. The substrate holder is then transported into a vacuum processing chamber, wherein it is made to abut against a mask straight edge to which the shadow mask is attached and aligned to. Since the substrate was aligned to an alignment straight edge, and since the mask is aligned to the mask straight edge that is precisely aligned to the alignment straight edge, the substrate is perfectly aligned to the mask. 1. A system for aligning a substrate to a processing mask , comprising:a substrate holder having a holder alignment mechanism;a system guide configured to be engaged by the holder alignment mechanism to thereby orient the substrate holder to the system guide;a mask alignment mechanism attached to a processing chamber and aligned to the system guide, the mask alignment mechanism having mask attachment mechanism for attaching a processing mask in precise alignment to the mask alignment mechanism tracks positioned below the processing mask and configured to enable the substrate holder to place substrates below the mask when the holder alignment mechanism engages the mask alignment mechanism.2. The system of claim 1 , wherein the holder alignment mechanism comprises at least two rollers.3. The system of claim 2 , wherein the system guide comprises a straight edge configured to be engaged by the rollers.4. The system of claim 3 , wherein the mask alignment mechanism comprises a straight bar configured to be engaged by the rollers.5. The system of claim 4 , further comprising a carrier configured for traveling on the tracks and supporting the substrate holder.6. The system of claim 5 , wherein the substrate holder is configured to move in two degrees of freedom over the carrier.7. The system of ...

Method and device for spatial charged particle bunching

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

METHOD OF MANUFACTURING OPTICAL MEMBER

A manufacturing method of an optical member includes providing a raw member, disposing first ions and second ions in the raw member, and heat-treating the raw member with the first and second ions therein such that the first ions are reacted with the second ions in the raw member to form quantum dots in the raw member which forms the optical member. 1. A method of manufacturing an optical member , comprising:providing a raw member injecting first ions and second ions into the raw member; andheat-treating the raw member having the first ions and second ions therein to couple the first ions to the second ions within a portion of the raw member, the coupled ions forming quantum dots within the portion of the raw member to form the optical member.2. The method of claim 1 , wherein the injecting the first and second ions into the raw member comprises:accelerating the first ions to form a first ion beam;accelerating the second ions to form a second ion beam;irradiating the first ion beam to the raw member to inject the first ions into the raw member; andirradiating the second ion beam to the raw member to inject the second ions into the raw member.3. The method of claim 1 , wherein the heat-treating the raw member is performed by heating the raw member at a temperature equal to or greater than about 300 degrees Celsius and equal to or less than about 500 degrees Celsius.4. The method of claim 1 , whereinthe first and second ions are injected into the raw member through a side surface thereof corresponding to a light incident surface of the optical member, andthe injected first and second ions are disposed within a first area portion of the raw member, the first area portion defined from the side surface of the raw member, andthe injected first and second ions are not disposed within a second area portion of the raw member, the second area portion defined as a remaining area portion of the raw member except for the first area portion.5. The method of claim 1 , wherein the ...

IONIZATION VACUUM MEASURING CELL

The invention relates to an ionization vacuum measuring cell () comprising an evacuable housing () with a measurement connection for a vacuum to be measured at an end portion; a measurement chamber () in the housing (), said measurement chamber being fluidically connected to the measurement connection, wherein the measurement chamber () is designed as a replaceable component; and a first and a second electrode () in the measurement chamber (), said electrodes being substantially coaxial to an axis and being arranged at a distance from each other. The measuring cell further comprises an electrically insulating and vacuum-tight feedthrough () for an electric supply to the second electrode () and a magnetization assembly which is designed to generate a magnetic field in the ionization chamber. According to the invention, the measurement chamber (), in particular at least one of the electrodes (), comprises a magnetic material. 110. Ionization vacuum measuring cell () , comprising:{'b': '12', 'a) an evacuable housing () having a measuring connection for a vacuum to be measured at an end portion;'}{'b': 14', '12', '14, 'b) a measuring chamber () in the housing (), which is in fluid communication with the measuring connection, wherein the measuring chamber () is preferably designed as an exchangeable component;'}{'b': 16', '18', '14', '14', '16', '18', '16', '18, 'b) a first and a second electrode (, ) in the measuring chamber (), which are arranged substantially coaxially with respect to an axis and spaced from each other, whereby an ionization space is formed in the measuring chamber () between these two electrodes (, ), wherein the first electrode () preferably has a substantially cylindrical surface and the second electrode () is preferably rod-shaped and lies on the axis;'}{'b': 20', '18', '18, 'c) an electrically insulating and vacuum-tight feedthrough () for electrical supply to the second electrode (), comprising an electrical insulator, wherein the second ...

APPARATUS AND METHOD FOR GENERATING HIGH CURRENT NEGATIVE HYDROGEN ION BEAM

An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive Hgas; a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and an extraction assembly arranged to extract the H ions from the ion source chamber. 1. An apparatus to generate negative hydrogen ions , comprising:{'sub': '2', 'an ion source chamber having a gas inlet to receive Hgas;'}{'sub': 2', '2, 'a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas;'}{'sup': '−', 'sub': '2', 'a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and'}{'sup': '−', 'an extraction assembly arranged to extract the H ions from the ion source chamber, wherein the light source is embedded at least partially in a wall of the ion source chamber, or is disposed within the ion source chamber.'}2. The apparatus of claim 1 , the light source extending along a first side of the ion source chamber and along a second side of the ion source chamber.3. The apparatus of claim 1 , the low energy electron source extending along a third side of the ion source chamber and along a fourth side of the ion source chamber.4. The apparatus of claim 1 , the light source generating radiation having an energy of at least 1.5 eV.5. The apparatus of claim 1 , the light source comprising radiation having a photon energy of 1.5 eV to 5.0 eV.6. The apparatus of claim 1 , the light source comprising a light-emitting diode claim 1 , a laser claim 1 , or a broad spectrum light source generating photons having ...

CARBON MATERIALS FOR CARBON IMPLANTATION

A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CFOHwherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide. 122-. (canceled)23. A gas composition comprising:{'sub': 2', '2, 'a carbon-containing dopant material for implanting carbon ions into a substrate, wherein the carbon-containing dopant material is any one of CO, COor COF; and'}at least one additional gas.24. The gas composition of claim 23 , wherein the at least one additional gas comprises a gas selected from the group consisting of oxygen claim 23 , oxygen-containing gas claim 23 , fluorine-containing gas claim 23 , COF claim 23 , CO claim 23 , CO claim 23 , air claim 23 , hydrogen claim 23 , fluorine claim 23 , nitrogen claim 23 , argon claim 23 , xenon claim 23 , and helium.25. The gas composition of claim 23 , wherein the carbon-containing dopant material comprises at least one of CO and CO claim 23 , and wherein the additional gas or series of gases comprises one or more of F claim 23 , COF claim 23 , and CF.26. The gas composition of claim 23 , wherein the carbon-containing dopant material comprises CO.27. The gas composition of claim 23 , wherein the at least one additional gas comprises hydrogen.28. The gas composition of claim 23 , wherein the at least one additional gas comprises xenon and hydrogen.29. The gas composition of claim 23 , wherein the at least one additional gas comprises a fluorine-containing gas.30. The gas composition of claim 23 , wherein the carbon- ...

LIGHT BATH FOR PARTICLE SUPPRESSION

An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm. 1. An apparatus for reducing an amount of non-positively charged particles in an ion beam , comprising:a light source, disposed on one side of the ion beam and emitting light at a wavelength sufficiently short so as to ionize non-positively charged particles into positively charged particles; anda positively biased electrode downstream from the light source, to repel the positively charged particles, wherein the ion beam is directed toward a workpiece after exposure to the light source.2. The apparatus of claim 1 , wherein the wavelength is less than 250 nm.3. The apparatus of claim 1 , wherein the wavelength is less than 200 nm.4. The apparatus of claim 1 , further comprising a light sink to absorb light emitted by the light source.5. The apparatus of claim 4 , wherein the light sink is disposed on an opposite side of the ion beam from the light source.6. The apparatus of claim 1 , wherein the non-positively charged particles comprise neutral particles.7. The apparatus of claim 1 , wherein the non-positively charged particles comprise negatively charged particles.8. A beamline ion implantation system claim 1 , comprising:an ...

ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD

An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit. 1. An ion implantation apparatus comprising:a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform;a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction; anda control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer,wherein the control device includesa scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, anda beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.2. The ion implantation apparatus according to claim 1 ,wherein an upper limit change rate that is an upper limit value of a change in time of the scan waveform available for driving is determined in the beam scanner driving unit, andthe scan frequency adjusting unit determines the frequency of the scan waveform to be less than or equal to an upper limit scan frequency that is the frequency of the scan waveform in a case that a maximum change rate of the scan waveform for realizing the ...

CARBON MATERIALS FOR CARBON IMPLANTATION

A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CFOHwherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide. 1. A method of implanting carbon in a substrate from a carbon-containing dopant material , comprising:flowing a carbon-containing dopant material comprising a carbon-containing gas, and a fluorine-containing gas, into an ion implantation chamber; andionizing the carbon-containing dopant material to form ions comprising positive carbon ions.2. The method of claim 1 , wherein flowing comprises flowing additional gas or gases comprising a gas selected from the group consisting of oxygen claim 1 , an oxygen-containing gas that is different than COand CO claim 1 , air claim 1 , hydrogen claim 1 , nitrogen claim 1 , argon claim 1 , xenon claim 1 , and helium claim 1 , with the carbon-containing and fluorine-containing gasses.3. The method of claim 2 , wherein the additional gas or gases comprises hydrogen or helium.4. The method of claim 2 , wherein the additional gas or gases comprises inert gas selected from the group consisting of nitrogen claim 2 , argon claim 2 , xenon claim 2 , helium claim 2 , and combinations thereof.5. (canceled)6. The method of claim 1 , wherein the additional gas or gases comprises an oxygen-containing gas.7. (canceled)8. The method of claim 1 , wherein the fluorine-containing gas comprises COF.9. The method of claim 1 , wherein the carbon-containing gas comprises CO.10. The method of claim 1 , wherein the ...

TECHNIQUES AND APPARATUS FOR MANIPULATING AN ION BEAM

A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation; passing the ion beam through an aperture in a magnetic assembly; and generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation. 1. A method , comprising:generating an ion beam from an ion source, the ion beam having an initial direction of propagation;deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation;passing the ion beam through an aperture in a magnetic assembly; andgenerating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.2. The method of claim 1 , wherein the generating the quadrupole field comprises:providing a first current through a first coil disposed on a first side of the aperture, the first coil having a first coil axis extending along the second direction; andproviding a second current through a second coil disposed on a second side of the aperture, the second coil having a second coil axis extending along the second direction.3. The method of claim 2 , wherein the generating the dipole field comprises providing the first current to the first coil at a first magnitude and providing the second current at a second magnitude simultaneously to the providing the first current claim 2 , the second magnitude being different from the first magnitude.4. The method of claim 2 , wherein the magnetic assembly comprises a magnetic ...

DEVICE FOR MODULATING THE INTENSITY OF A PARTICLE BEAM FROM A CHARGED PARTICLE SOURCE

A device for modulating the intensity of a charged particle beam emitted along an axis, comprises 4×N consecutive deflection systems, with N=1 or 2, with the deflection systems being positioned along the axis of said particle beam, and being capable of deflecting the beam relative to the axis in the same direction, with alternating directions of deflection, for two consecutive systems, means for applying a force for deflecting the beam for each deflection system and for varying the applied force; two collimators each having a slot with an opening that increases in width from the center towards the periphery, located respectively between the first and second deflection systems and between the third and fourth deflection systems, with the opening of the slot of the first collimator facing towards one side of the emission axis of the beam, with the opening of the slot of the second collimator facing towards the opposite side of the emission axis of the beam. 1. A device for modulating the intensity of a charged particle beam emitted along an axis , comprising:4×N consecutive deflection systems, with N=1 or 2, with the deflection systems being positioned along the axis of said particle beam, and being capable of deflecting the beam relative to the axis in the same direction, with alternating directions of deflection, for two consecutive systems,means for applying a force for deflecting the beam for each deflection system and for varying the applied force,two collimators each having a slot with an opening that increases in width from the center towards the periphery, located respectively between the first and second deflection systems and between the third and fourth deflection systems, with the opening of the slot of the first collimator facing towards one side of the emission axis of the beam, with the opening of the slot of the second collimator facing towards the opposite side of the emission axis of the beam.2. The device according to claim 1 , wherein each of said ...

GRID, METHOD OF MANUFACTURING THE SAME, AND ION BEAM PROCESSING APPARATUS

A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers. 1. A plate-shaped grid provided with a hole , whereinthe grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, andthe hole is formed in the grid so as to cut off the carbon fibers.2. The grid according to claim 1 , wherein the carbon fibers included in the carbon-carbon composite are chopped carbon fibers.3. The grid according to claim 1 , wherein at least part of the carbon-carbon composite is coated with a different material from the carbon-carbon composite.4. An ion beam processing apparatus comprising:a plasma generating unit;a processing chamber; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a grid assembly including the grid according to and configured to extract ions from plasma generated by the plasma generating unit to the processing chamber.'}5. A method of manufacturing a grid comprising:preparing a plate-shaped carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the carbon-carbon composite; andforming a hole in the carbon-carbon composite so as to cut off the carbon fibers by using a processing tool configured to perform cutting by rotary motion. This application is a continuation application of International Application No. PCT/JP2015/005851, filed Nov. 25, 2015, which claims the benefit of Japanese Patent Application No. 2015-052363 filed Mar. 16, 2015. The contents of the aforementioned applications are incorporated herein by reference in their entireties.Field of the InventionThe present invention relates to a grid plate, a method of manufacturing the same, and an ion beam processing apparatus.Description of the Related ArtIon ...

ETCHING ALUMINUM NITRIDE OR ALUMINUM OXIDE TO GENERATE AN ALUMINUM ION BEAM

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

FRACTIONING DEVICE

A fractioning device for an ion implantation device with at least one fractioning wall, wherein the fractioning device is suitable for being inserted within a channel. The channel is configured to connect an ion source, which is at a first pressure p1 and a processing chamber, which is at a second pressure p2 in an ion implantation device. 1. A fractioning device for an ion implantation device comprising:at least one fractioning wall,wherein the fractioning device is suitable for being inserted within a channel, 'wherein the ion source is at a first pressure (p1) and the processing chamber is at a second pressure (p2), and', 'wherein the channel is configured to connect an ion source and a processing chamber,'}wherein an average transversal cross-sectional length of the fractioning device is at least 10% of an internal perimeter of the fractioning device.2. The fractioning device of claim 1 , wherein a length of the fractioning device is not more than 80% of the length of the channel.3. The fractioning device of claim 1 , wherein at least one valve is configured between the channel and the ion chamber.4. The fractioning device of claim 1 , wherein the fractioning device comprises two or more fractioning walls.5. The fractioning device of claim 4 , wherein the two or more fractioning walls intersect at least at one point.6. The fractioning device of claim 4 , wherein the two or more fractioning walls do not intersect.7. The fractioning device of claim 1 , wherein the fractioning device is placed at any distance from a center point of an internal section of the channel and/or placed at any height inside the channel.8. The fractioning device of claim 1 , wherein the fractioning device comprises a material selected from the group consisting of graphite claim 1 , stainless steel claim 1 , boron carbide claim 1 , silicon oxide claim 1 , silicon carbide claim 1 , silicon nitride claim 1 , aluminium carbide claim 1 , zirconium oxide claim 1 , zirconium carbide claim 1 , ...

Ion beam irradiation apparatus and substrate processing apparatus

Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.

ION IMPLANTATION SYSTEM AND PROCESS

Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening. 1. A method for implanting ions into a work piece using an ion implantation system comprising an ion source , an extraction manipulator , a magnetic analyzer , and an electrode assembly , the method comprising:generating an ion beam by using the extraction manipulator to extract ions from the ion source, wherein a cross-section of the ion beam has a long dimension and a short dimension orthogonal to the long dimension of the ion beam;directing the ion beam through the magnetic analyzer, the magnetic analyzer configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam;accelerating or decelerating the ion beam through the electrode assembly, wherein one or more entrance electrodes of the electrode assembly defines a first opening, wherein the electrode assembly is positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening, and wherein the ion beam converges in the x-direction to a minimum width along the x-direction that is positioned within ...

SYSTEM AND METHOD FOR IN-SITU BEAMLINE FILM STABILIZATION OR REMOVAL IN THE AEF REGION

An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates and/or etches a film residing on the AEF by a reaction of the film with a gas. The gas can be an oxidizing gas or a fluorine-containing gas. The gas source can selectively supply the gas to the AEF region concurrent with a formation of the ion beam. The AEF is heated to assist in the passivation and/or etching of the film by the gas. The heat can originate from the ion beam, and/or from an auxiliary heater associated with the AEF. A manifold distributor can be operably coupled to the gas source and configured to supply the gas to one or more AEF electrodes. 1. An ion implantation system , comprising:an ion source configured form an ion beam;an angular energy filter (AEF) having an AEF region associated therewith; anda gas source configured to supply a gas to the AEF region, wherein the gas source is configured to passivate and/or etch a film residing on the AEF via a reaction of the film with the gas.2. The ion implantation system of claim 1 , wherein the gas source comprises one or more of an oxidizing gas source and a fluorine-containing gas source configured to selectively supply a respective oxidizing gas and fluorine-containing gas to the AEF region.3. The ion implantation system of claim 2 , wherein the fluorine-containing gas comprises one or more of NFand XeF4. The ion implantation system of claim 2 , wherein the oxidizing gas comprises one or more of air and water.5. The ion implantation system of claim 1 , wherein the gas source is configured to selectively supply the gas to the AEF region concurrent with a formation of the ion beam claim 1 , and wherein heat associated with the ion beam is configured to heat the AEF to assist in the passivation and/or etching of the film residing on the AEF.6. The ion implantation system of claim 1 , further comprising a manifold distributor associated with the AEF claim ...

MASS ANALYZING ELECTROMAGNET AND ION BEAM IRRADIATION APPARATUS

A mass analyzing electromagnet is provided. The mass analyzing electromagnet includes an analysis tube having an internal zone formed as a passage for the ion beam; and 1. A mass analyzing electromagnet comprising:an analysis tube comprising at least one shield member provided at a region of an inner wall surface of the analyzing tube, the at least one shield member intersecting with a direction perpendicular to a traveling direction of an ion beam and a mass-based separation direction of the ion beam, the at least one shield member configured to block a peripheral end of the ion beam,wherein the analysis tube has an internal zone formed as a passage for the ion beam, the mass analyzing electromagnet being configured to deflect the ion beam in a given direction to separate ions contained in the ion beam according to a difference in mass.2. The mass analyzing electromagnet as recited in claim 1 , wherein the shield member extends from the region of the inner wall surface of the analysis tube inclinedly in a direction opposite to the traveling direction of the ion beam.3. The mass analyzing electromagnet as recited in claim 1 , wherein the at least one shield member comprises a plurality of shield members claim 1 , and wherein the plurality of shield members are arranged in opposed relation to each other across the ion beam.4. The mass analyzing electromagnet as recited in claim 1 , wherein each of the at least one shield member comprises:a member body; anda catching portion extending from a distal end of the member body in a direction opposite to the traveling direction of the ion beam, in such a manner as to be bent from the distal end of the member body toward a given position in the region of the inner wall surface of the analysis tube at which the member body is mounted.5. The mass analyzing electromagnet as recited in claim 1 , wherein each of the at least one shield member comprises:a member body; anda sidewall portion provided along at least one of lateral ...

DIE STACK TEST ARCHITECTURE AND METHOD

A test control port (TCP) includes a state machine SM, an instruction register IR, data registers DRs, a gating circuit and a TDO MX. The SM inputs TCI signals and outputs control signals to the IR and to the DR. During instruction or data scans, the IR or DRs are enabled to input data from TDI and output data to the TDO MX and the top surface TDO signal. The bottom surface TCI inputs may be coupled to the top surface TCO signals via the gating circuit. The top surface TDI signal may be coupled to the bottom surface TDO signal via TDO MX. This allows concatenating or daisy-chaining the IR and DR of a TCP of a lower die with an IR and DR of a TCP of a die stacked on top of the lower die. 1. An integrated circuit die comprising:(a) a first surface including Parallel Test Input (PTI) contact points, a first Test Data input (TDI) contact point, a first Test Clock (TCK) contact point, a first Test Mode Select (TMS) contact points, a first Test Data Output (TDO) contact point, and first Parallel Test Input/Output (PTIO) contact points;(b) a second surface including PTO contact points, a second TDO contact point, a second TCK contact point, a second TMS contact point, a second TDI contact point, and second PTIO contact points;(c) state machine circuitry having inputs coupled to the first TCK contact point, and the first TMS contact point, and having an instruction register control output, and a data register control output;(d) an instruction register having a control input coupled to the instruction register control output, a serial input coupled to the first TDI contact point, a serial output coupled to the second TDO contact point, and having a control output;(e) a data register having a control input coupled to the data register control output, a control input coupled to the instruction register control output, a serial input coupled to the first TDI contact point, and a serial output coupled to the second TDO contact point; and(f) switching circuitry having inputs ...

Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD

A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit. 1. A beam current adjuster for an ion implanter comprising:a variable aperture device disposed at a focus point of an ion beam or a vicinity thereof to adjust a beam width of the ion beam in a direction perpendicular to a focusing direction of the ion beam at the focus point in order to control an implanting beam current.2. The beam current adjuster according to claim 1 , wherein the variable aperture device is disposed immediately downstream of a mass analysis slit.3. The beam current adjuster according to claim 2 , wherein the mass analysis slit includes a fixed slit.4. The beam current adjuster according to claim 2 , wherein a slit position and/or a slit width of the mass analysis slit is adjustable in the focusing direction.5. The beam current adjuster according to claim 1 , wherein the variable aperture device is disposed immediately upstream of a mass analysis slit.6. The beam current adjuster according to claim 5 , wherein the mass analysis slit includes a fixed slit.7. The beam current adjuster according to claim 5 , wherein a slit position and/or a slit width of the mass analysis slit is adjustable in the focusing direction.8. The beam current adjuster according to claim 1 , further comprising a beam current detector that may be arranged downstream of the variable aperture device to measure the implanting beam current claim 1 ,wherein the variable aperture device determines the implanting ...

DECELERATION APPARATUS FOR RIBBON AND SPOT BEAMS

A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions. 17-. (canceled)8. An electrode assembly for accelerating or decelerating an ion beam , the electrode assembly comprising:a plurality of electrodes configured to define a first ion beam path through the electrode assembly; the first pair of deflecting electrodes form an opening having a long dimension and a short dimension perpendicular to the long dimension;', 'the first pair of deflecting electrodes are positioned on opposite sides of a first plane aligned with the long dimension; and', 'the pair of deflecting electrodes are configured to deflect the ion beam by a first amount with respect to the first plane as the ion beam passes between the first pair of deflecting electrodes;, 'a first pair of deflecting electrodes of the plurality of electrodes defining a first portion of the first ion beam path, wherein the second pair of deflecting electrodes is positioned on opposite sides of a second plane that is parallel to the long dimension;', 'the second pair of deflecting electrodes are configured to deflect the ion beam by a second amount with respect to the second plane as the ion beam passes between the second pair of deflecting electrodes; and, 'a second pair of deflecting electrodes of the plurality of electrodes defining a second portion of the first ion beam path, wherein the first pair of auxiliary electrodes are positioned on opposite sides of a third plane that is perpendicular ...

Low profile extraction electrode assembly

A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of the main body, a plurality of spaced apart mounting legs extending from a second face of the main body opposite the first face, the plurality of spaced apart mounting legs extending from the second face offset from the plurality of spaced apart mounting legs extending from the first face in a direction orthogonal to an axis of the main body, the low profile extraction electrode assembly further comprising a ground electrode fastened to the mounting legs extending from the first face, and a suppression electrode fastened to the mounting legs extending from the second face, wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode.

MICROBOLOMETER DEVICES IN CMOS AND BiCMOS TECHNOLOGIES

A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material. 1. A method of forming a microbolometer unit cell , comprising:damaging a portion of a substrate to form a damaged region;forming infrared (IR) absorbing material on the damaged region; andisolating the IR absorbing material by forming a cavity underneath the IR absorbing material.2. The method of claim 1 , wherein the damaged region comprises an ion implantation process.3. The method of claim 2 , wherein the IR absorbing material is isolated from active devices claim 2 , which are protected during the ion implantation process.4. The method of claim 1 , wherein forming the cavity comprises forming a plurality of vent holes through the IR absorbing material and damaged region and removing portions of the substrate underneath the damaged region.5. The method of claim 1 , further comprising forming an electrical connection to the IR absorbing material.6. The method of claim 5 , wherein the forming of the electrical connection is a wirebonding process.7. The method of claim 5 , wherein the forming of the electrical connection comprises forming a via structure and wiring layer in electrical contact with the IR absorbing material.8. The method of claim 7 , further comprising forming a wirebond to the wiring layer.9. The method of claim 1 , further comprising annealing the damaged region to form a single crystalline structure.10. The method of claim 1 , further comprising forming a cavity above the IR absorbing material claim 1 , the forming of the cavity above the IR absorbing material comprises:depositing a sacrificial material ...

Load Lock Device Having Optical Measuring Device for Acquiring Distance

The present disclosure provides a substrate processing apparatus including at least one input/output chamber. The load lock device includes a base, a guide rail, a platform and an optical measuring module. The guide rail is connected to the base. The platform, carrying a cassette for holding a batch of spaced substrates, is movably disposed on the guide rail. The optical measuring module is configured to acquire an actual moving distance traveled by the platform along the guide rail based on at least one optical signal reflected from the platform. 1. A substrate processing apparatus , comprising:a controller; and a base;', 'a guide rail connected to the base;', 'a platform, carrying a cassette for holding a batch of spaced substrates, the platform being movably disposed on the guide rail; and, 'at least one input/output chamber comprising a load lock device, the load lock device comprisingan optical measuring module configured to acquire an actual moving distance traveled by the platform along the guide rail based on at least one optical signal reflected from the platform, wherein the optical measuring module comprises a processor electrically coupled to the controller.2. The substrate processing apparatus of claim 1 , wherein the load lock device further comprises a motor electrically coupled to the processor and configured to move the platform upward and downward along the guide rail claim 1 , wherein the controller is configured to generate a preset moving distance for moving the platform claim 1 , wherein the preset moving distance is provided to the processor and eventually the motor claim 1 , and the processor is configured to compare a difference between the preset moving distance and the actual moving distance and issue an alarm if the difference is greater than a threshold.3. The substrate processing apparatus of claim 2 , wherein the optical measuring module further comprises a display for displaying the actual moving distance and a comparison result.4. ...

PHOSPHINE CO-GAS FOR CARBON IMPLANTS

Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber. 1. A process for implanting carbon into a substrate , the process comprising:ionizing a carbon oxide gas source and a co-gas comprising phosphine in an ion source chamber to produce carbon ions and phosphorous oxide; andimplanting the carbon ions into the substrate.2. The process of claim 1 , wherein the carbon oxide source comprises carbon suboxide claim 1 , carbon monoxide claim 1 , carbon dioxide claim 1 , a carbon containing gas and an oxygen gas mixture or combinations thereof.3. The process of claim 1 , wherein the ion source chamber comprises one or more components formed of or coated with lanthanum tungsten.4. The process of claim 1 , wherein the one or more components are selected from the group consisting of a cathode claim 1 , cathode shield claim 1 , a repeller claim 1 , a liner claim 1 , an arc slit claim 1 , a source chamber wall claim 1 , a liner claim 1 , aperture plates claim 1 , extraction electrodes claim 1 , and an arc chamber body.5. The process of claim 1 , wherein the phosphine relative to the carbon oxide gas is at a ratio such that formation of the phosphorous oxides is at about zero.6. The process of claim 3 , wherein the carbon oxide gas is carbon monoxide and reacts with the phosphine in accordance with reaction scheme I:{'br': None, 'sub': 3', '2', '3', '4', '10', '4', '6, 'sup': '+', '24CO+8PH+4LaW→22C+24OH+2CO+2LaO+4W+PO+PO.\u2003\u2003I.'}7. The process of claim 1 , wherein the lanthanated tungsten comprises lanthanum in an amount from 1 to 3% by weight.8. A process for implanting carbon ions into a workpiece ...

ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS

An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage. 1. An ion implantation method using an ion implantation apparatus including a high-energy multistage linear acceleration unit , the high-energy multistage linear acceleration unit including a plurality of stages of high-frequency resonators and operating in accordance with a high-frequency parameter determining voltage amplitudes , frequencies , and phases of the high-frequency resonators in each stage , the method comprising:measuring a beam energy of an ion beam that is generated by the high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter;adjusting a value of the high-frequency parameter based on the measured beam energy in order to acquire a target beam energy; andperforming ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter,wherein the tentative high-frequency parameter is determined in such a manner that a value different from the value of the high-frequency parameter for achieving a ...

Boron Implanting Using A Co-Gas

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used. 1. A method of implanting a workpiece , comprising:energizing a first source gas, comprising a processing species and fluorine, and neon in a chamber to form a plasma in the chamber; andextracting ions from the plasma and directing the ions toward the workpiece, wherein an amount of pure processing species ions extracted from the plasma as a percentage of all processing species-containing ions increases by at least 5%, as compared to a baseline when neon is not used.2. The method of claim 1 , further comprising:energizing a second source gas, comprising hydrogen and at least one of silicon and germanium, in the chamber to create ions from the second source gas; andextracting ions created from the second source gas from the plasma and directing the ions from the second source gas toward the workpiece.3. The method of claim 1 , wherein the ions are directed toward the workpiece without mass analysis.4. The method of claim 1 , wherein an amount of pure processing species ions extracted from the plasma as a percentage of all processing species-containing ions increases by at least 10% claim 1 , as compared to the baseline.5. The ...

Ion beam irradiation apparatus and program therefor

An ion beam irradiation apparatus includes modules for generating an ion beam according to a recipe, and a control device. The control device receives the recipe including a processing condition for new processing, reads, from a monitored value storage, a monitored value that indicates a state of a module during a last processing immediately before the new processing, inputs the processing condition and the monitored value to a trained machine learning algorithm and receives, as an output from the trained machine learning algorithm, an initial value for the module, and outputs the initial value to the module to set up the module for generating the ion beam.

APPARATUS AND METHOD TO CONTROL AN ION BEAM

An apparatus to control a ribbon ion beam. The apparatus may include a coil assembly comprising a plurality of electromagnetic coils configured to generate a magnetic field proximate the ribbon beam, the magnetic field extending in a first direction that forms a non-zero angle with respect to a direction of propagation of the ribbon ion beam; a current source assembly configured to supply current to the coil assembly; and a controller configured to control the current source assembly to send at least one dithering current signal to the coil assembly responsive to a beam current measurement of the ribbon ion beam, wherein the at least one dithering current signal generates a fluctuation in magnetic field strength of the magnetic field. 1. An apparatus to control a ribbon ion beam , comprising:a coil assembly comprising a plurality of electromagnetic coils configured to generate a magnetic field proximate the ribbon beam, the magnetic field extending in a first direction that forms a non-zero angle with respect to a direction of propagation of the ribbon ion beam;a current source assembly configured to supply current to the coil assembly; anda controller configured to control the current source assembly to send a plurality of dithering current signals to the coil assembly responsive to a beam current measurement of the ribbon ion beam, wherein the plurality of dithering current signals generate a fluctuation in magnetic field strength of the magnetic field, wherein a first dithering current signal applied to a first electromagnetic coil varies in at least one respect from a second dithering current signal applied to a second electromagnetic coil of the coil assembly.2. The apparatus of claim 1 , wherein the current source assembly comprises a plurality of current sources that are configured to individually supply current to the respective plurality of electromagnetic coils.3. The apparatus of claim 2 , wherein the controller is configured to direct the current source ...

Laser-Induced Borane Production for Ion Implantation

Systems and methods for the production of laser induced high mass molecular borane is disclosed for an ion implantation system. The system comprises a laser, a diborane gas source, a heated interaction chamber for generating a high mass molecular borane, a transport system for transferring the high mass molecular borane, and an ion source chamber for generating an ion beam in an ion beam path for implantation of a workpiece. The transport system comprises at least a first and a second flow control component at least a first heated chamber, wherein the first heated chamber is disposed between the first and second flow control components, and wherein the first heated chamber is configured to condense the high mass molecular borane. The laser comprises a CO 2 laser configured to irradiate the diborane source gas at a wavelength of about 10.6 μm at a R-16 (973 cm −1 ) line of excitation.

Adjustable Mass Resolving Aperture

Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

ION IMPLANTER

A technique disclosed in the present specification relates to an ion implanter capable of preventing a semiconductor substrate from being damaged by an abnormal electric discharge through a simple method. The ion implanter of this technique includes an ion irradiation unit configured to irradiate a surface of a semiconductor substrate with ions. The ion implanter also includes at least one electrode (needle electrode, annular electrode) disposed in a position in the vicinity of at least one of back and side surfaces of an end of the semiconductor substrate. The position is dischargeable to and from the semiconductor substrate. The at least one electrode (needle electrode, annular electrode) is spaced apart from the semiconductor substrate. 1. An ion implanter comprising:an ion irradiation unit configured to irradiate a front surface of a semiconductor substrate with an ion; andat least one electrode disposed in a position in a vicinity of at least one of back and side surfaces of an end of said semiconductor substrate, said position being electrically dischargeable to and from said semiconductor substrate, said at least one electrode being spaced apart from said semiconductor substrate.2. The ion implanter according to claim 1 , wherein a distance between said at least one electrode and said semiconductor substrate is 4.4 mm or less.3. The ion implanter according to claim 1 , wherein said at least one electrode comprises a plurality of electrodes arranged in a direction crossing a direction from said at least one electrode toward said semiconductor substrate.4. The ion implanter according to claim 1 , wherein said at least one electrode is disposed around at least a part of said semiconductor substrate in a plan view.5. The ion implanter according to claim 1 , wherein said at least one electrode has a pointed end toward said semiconductor substrate. Field of the InventionA technique disclosed in the specification relates to ion implanters, and relates to, for ...

ION BEAM GENERATOR, ION IMPLANTATION APPARATUS INCLUDING AN ION BEAM GENERATOR AND METHOD OF USING AN ION BEAM GENERATOR

An ion beam generator includes a plurality of arc chambers, wherein each arc chamber of the plurality of arc chamber is integral with every arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of extraction slits, wherein each extraction slit of the plurality of extraction slits is configured to extract ions from a corresponding arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of arc slits, wherein each arc slit of the plurality of arc slits is configured to provide an ion path between a corresponding extraction slit of the plurality of extraction slits and the corresponding arc chamber of the plurality of arc chambers. 1. An ion beam generator comprising:a plurality of arc chambers, wherein each arc chamber of the plurality of arc chambers is integral with every arc chamber of the plurality of arc chambers;a plurality of extraction slits, wherein each extraction slit of the plurality of extraction slits is configured to extract ions from a corresponding arc chamber of the plurality of arc chambers; anda plurality of arc slits, wherein each arc slit of the plurality of arc slits is configured to provide an ion path between a corresponding extraction slit of the plurality of extraction slits and the corresponding arc chamber of the plurality of arc chambers.2. The ion beam generator of claim 1 , wherein a first arc chamber of the plurality of arc chambers is independently operable with respect to a second arc chamber of the plurality of arc chambers.3. The ion beam generator of claim 1 , wherein the plurality of extraction slits is configured to combine extracted ions to form a single ion beam.4. The ion beam generator of claim 1 , further comprising a plurality of electrodes claim 1 , wherein each electrode of the plurality of electrodes is in a corresponding arc chamber of the plurality of arc chambers.5. The ion beam generator of claim 4 , wherein each electrode of the ...

METHODS FOR ATOM INCORPORATION INTO MATERIALS USING A PLASMA AFTERGLOW

There are provided non-destructive methods for incorporating an atom such as N into a material such as graphene. The methods can comprise subjecting a gas comprising the atom to conditions to obtain a flowing plasma afterglow then exposing the material to the flowing plasma afterglow. There are also provided materials such as N-doped graphene produced by such methods. 1. A method for atom incorporation into a material , comprising:subjecting a gas comprising said atom to conditions to obtain a flowing plasma afterglow; andexposing said material to said flowing plasma afterglow.2. The method of claim 1 , wherein said gas is subjected to an electromagnetic field in the microwave regime to obtain a high-density plasma with a flowing plasma afterglow.3. The method of claim 2 , wherein said electromagnetic field claim 2 , has a frequency of about 433 MHz to about 3 GHz.45-. (canceled)6. The method of claim 1 , wherein said atom incorporated into said material is N claim 1 , O claim 1 , B claim 1 , H or mixtures thereof and said gas comprises N claim 1 , O claim 1 , BH claim 1 , Hor mixtures thereof claim 1 , respectively.7. The method of claim 1 , wherein said atom incorporated into said material is a mixture of N and O and said gas consists essentially of a mixture of Nand O.8. The method of claim 1 , wherein said atom incorporated into said material is N and said gas consists essentially of N.911-. (canceled)12. The method of claim 1 , wherein said method is carried out at a total gas pressure of from about 1 Torr to about 20 Torr.13. (canceled)14. The method of claim 1 , wherein said flowing plasma afterglow is a late afterglow.15. The method of claim 1 , wherein said flowing plasma afterglow has a positive ion density of about 10cmto about 10cm.1622-. (canceled)23. The method of claim 1 , wherein said material comprises graphene claim 1 , a nanomaterial claim 1 , a metal surface claim 1 , a crystal surface claim 1 , a polymer or a combination thereof.24. (canceled)25 ...

SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS WITH BEAM DECELARATION

An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system. 1. An ion implantation system comprising:an ion source from which an ion beam is extracted;an analyzer magnet configured to mass analyze the extracted beam and selectively output a mass analyzed beam along one of a first axis that intersects a workpiece at a nominal angle of incidence and a second axis that intersects the workpiece at an adjusted angle of incidence, wherein the adjusted angle of incidence differs from the nominal angle of incidence;a deflecting element configured to selectively deflect the mass analyzed beam along the second axis in one of a drift mode and a decel mode;a moveable mass resolving slit for directing the ion beam; andan end station configured to support the workpiece that is to be implanted with ions from the mass analyzed beam.2. The system of claim 1 , wherein the aperture assembly further comprises:a resolving plate comprising the plurality of different resolving apertures; andan actuator operably coupled to the resolving plate, and configured to position one of the plurality of different resolving apertures in an exit beam path of the mass analyzer based on one or more of the selected beam envelope and selected mass resolution ...

METHODS AND ASSEMBLIES USING FLOURINE CONTAINING AND INERT GASSES FOR PLASMA FLOOD GUN (PFG) OPERATION

A gas supply assembly is described for delivery of gas to a plasma flood gun which includes an inert gas and a fluorine-containing gas, wherein the assembly is configured to deliver a volume of the fluorine-containing gas to the flood gun that is not greater than 10% of a total volume of the fluorine-containing and inert gasses. The fluorine-containing gas can generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun. In combination with the gas amounts, the assembly and methods can use gas flow rates to optimize the cleaning effect and reduce filament material loss from the plasma flood gun during use. 1. A gas supply assembly for delivery of gas to a plasma flood gun (PFG) , comprising:a fluid supply package configured to deliver inert gas to a PFG for generating inert gas plasma including electrons for modulating surface charge of a substrate in ion implantation operation; anda fluorine-containing gas in mixture with the inert gas, or in a separate gas supply package configured to deliver the fluorine-containing gas concurrently or sequentially with respect to delivery of inert gas to the PFG,wherein the assembly is configured to deliver a volume of the fluorine-containing gas that is not greater than 10% of a total volume of the fluorine-containing and inert gasses.2. The gas supply assembly of configured to deliver a volume of the fluorine-containing gas in the range of 0.5 to 5% of the total volume of the fluorine-containing and inert gasses.3. The gas supply assembly of configured to deliver a volume of the fluorine-containing gas in the range of 0.75 to 4% of the total volume of the fluorine-containing and inert gasses.4. The gas supply assembly of configured to deliver a volume of the fluorine-containing gas in the range of 1 to 3% of the total volume of the fluorine-containing and inert gasses.5. The gas supply assembly of configured to ...

ION IMPLANTATION DEVICE

The disclosed ion implantation apparatus has a vacuum chamber a roller electrode having a portion of an outer circumferential part on which a film is wound, voltage application unit for applying a voltage to the roller electrode, and. a gas introduction unit having a. gas supply outlet for supplying an ion implantation gas into the vacuum chamber, wherein the gas introduction unit and a gas discharge outlet are disposed, so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween. 1. An ion implantation apparatus comprises:a vacuum chamber,a roller electrode having a portion ox an outer circumferential part on which a film is wound,voltage application means for applying a voltage to the roller electrode,a gas introduction unit having a gas supply outlet for supplying an ion implantation gas into the vacuum chamber, anda gas discharge outlet for discharging the gas present in the gas introduction unit and in the vacuum chamber,wherein the gas introduction unit and the gas discharge outlet are disposed so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween.2. An ion implantation apparatus according to claim 1 , wherein the gas introduction unit is provided with a plurality of gas supply outlets.3. An ion implantation apparatus according to claim 2 , wherein the gas supply outlets are disposed so as to be separated from one another and be opposite a peripheral portion of an axial end of the roller electrode.4. An ion implantation apparatus according to claim 1 , which has a flow straightening member disposed between the roller electrode and the inner wall of the vacuum chamber claim 1 , along the direction of gas flow from the gas supply outlets to the gas discharge outlet.5. An ion implantation apparatus according to claim 4 , wherein claim 4 , the flow straightening member is formed of a conductive metal.6. An ion implantation ...

METHOD AND ION IMPLANTER FOR LOW TEMPERATURE IMPLANTATION

A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP. 1. A method for a low temperature implantation , comprising:pre-cooling a workpiece to a first temperature to meet a recipe of the low temperature implantation;implanting the workpiece according to the recipe; andpost-heating the workpiece in a load lock to a second temperature higher than the first temperature before being returned to a FOUP.2. The method as claimed in claim 1 , wherein the first temperature is significantly lower than a room temperature claim 1 , while the second temperature is equal to or higher than a dew point at the moment starting to pass the workpiece from a vacuum condition to an ambient condition.3. The method as claimed in claim 2 , wherein the first temperature is equal to or lower than −40° C.4. The method as claimed in claim 1 , wherein the step for pre-cooling the workpiece comprises chilling an ESC by a chiller via a coolant line connected therebetween before transferring the workpiece to a process chamber for the recipe.5. The method as claimed in claim 1 , wherein the step for pre-cooling the workpiece is treated in a cooling chamber ...

INSULATION STRUCTURE OF HIGH VOLTAGE ELECTRODES FOR ION IMPLANTATION APPARATUS

An insulation structure of high voltage electrodes includes an insulator having an exposed surface and a conductor portion, which includes a joint region in contact with the insulator, and a heat-resistant portion provided, along at least part of an edge of the joint region, in such a manner as to be adjacent to the exposed surface of the insulator. The heat-resistant portion is formed of an electrically conductive material whose melting point is higher than that of the conductor portion. The heat-resistant portion may be so provided as to have a gap between the insulator and the exposed surface. 1. An insulation structure of high voltage electrodes for an ion implantation apparatus , the insulation structure comprising:two conductor portions that are electrodes; andan insulator provided between the two conductor portions,wherein the two conductor portions are individually connected to the insulator,wherein the insulator has an exposed surface to a vacuum space,wherein each of the two conductor portions includes a conductor body having a joint region having contact with the insulator, an exposed region to the vacuum space, and a boundary zone lying between the joint region and the exposed region,wherein at least one of the two conductor portions has at least one conductor element disposed on the conductor body, andwherein the conductor element is provided on at least part of the boundary zone in such a manner as to be adjacent to the exposed surface of the insulator, and the conductor element is formed of a conductive material whose melting point is higher than that of the conductor portion.2. The insulation structure of high voltage electrodes according to claim 1 , wherein the conductor element is arranged such that the conductor element has a gap between the conductor element and the exposed surface of the insulator.3. The insulation structure of high voltage electrodes according to claim 1 , wherein the insulator has an opposing part opposite to the boundary ...

Using Wafer Geometry to Improve Scanner Correction Effectiveness for Overlay Control

Systems and methods for providing improved scanner corrections are disclosed. Scanner corrections provided in accordance with the present disclosure may be referred to as wafer geometry aware scanner corrections. More specifically, wafer geometry and/or wafer shape signature information are utilized to improve scanner corrections. By removing the wafer geometry as one of the error sources that may affect the overlay accuracy, better scanner corrections can be obtained because one less contributing factor needs to be modeled. 1. A system , comprising:an overlay metrology tool configured to collect a raw overlay signature from at least one wafer;a measurement device configured to collect wafer geometry data from the at least one wafer; andan analyzer in communication with the overlay metrology tool and the measurement device, the analyzer configured to provide a wafer geometry aware scanner correction for the at least one wafer based on the raw overlay signatures and wafer geometry data collected.2. The system of claim 1 , wherein the analyzer is configured to:obtain a shape signature of the at least one wafer based on the wafer geometry data collected for the at least one wafer; andremove the shape signature from the raw overlay signature of the at least one wafer prior to providing the wafer geometry aware scanner correction.3. The system of claim 2 , wherein the analyzer utilizes a correction per exposure technique to remove the shape signature from the raw overlay signature to obtain an intermediate overlay signature for the at least one wafer.4. The system of claim 2 , wherein the analyzer is configured to:identify a particular wafer geometry group out of a plurality of wafer geometry groups that best matches wafer geometry of the at least one wafer; andapply at least one scanner correction value associated with the particular wafer geometry group to the at least one wafer.5. The system of claim 2 , wherein the at least one wafer includes a set of wafers claim 2 ...

Marking plastic-based products

Methods of marking plastic-based products and marked plastic-based products are provided. Some methods include irradiating the product to alter the functionalization of the plastic. In general, the present disclosure features methods of marking substrates, e.g., substrates including plastics, such as plastic-based products, such as polymer banknotes. Such plastics can be rigid or flexible, e.g., elastomeric. Such plastics can be thermoplastic or thermosets. In some cases, the products are marked by irradiating plastic-based materials, e.g., sheet materials, under conditions that alter characteristics of the irradiated plastic.

ION SOURCES, SYSTEMS AND METHODS

Ion sources, systems and methods are disclosed. 120.-. (canceled)21. A method , comprising:generating an ion beam by interacting a gas with a gas field ion source;using the ion beam to determine information about a lithography mask, the ion beam having a spot size of 10 nm or less at a surface of the semiconductor article; andrepairing the lithography mask based on the information.22. The method of claim 21 , wherein the information is selected from the group consisting of topographical information about a surface of the lithography mask claim 21 , material constituent information of a surface of the lithography mask claim 21 , material constituent information about a sub-surface region of the lithography mask claim 21 , crystalline information about the lithography mask claim 21 , voltage contrast information about a surface of the lithography mask claim 21 , voltage contrast information about a sub-surface region of the lithography mask claim 21 , magnetic information about the lithography mask claim 21 , and optical information about the lithography mask.23. The method of claim 21 , wherein the ion beam interacts with the lithography mask to cause particles to leave the mask claim 21 , the particle being selected from the group consisting of secondary electrons claim 21 , Auger electrons claim 21 , secondary ions claim 21 , secondary neutral particles claim 21 , primary neutral particles claim 21 , scattered ions and photons.24. The method of claim 21 , wherein repairing the lithography mask comprises adding material to the mask.25. The method of claim 24 , wherein repairing the lithography mask comprises removing material from the mask.26. The method of claim 21 , wherein repairing the lithography mask comprises removing material from the mask.27. The method of claim 21 , further comprising using the mask in a lithography process.28. The method of claim 27 , wherein the lithography process comprises fabricating a semiconductor article.29. The method of claim 21 ...

ION IMPLANTATION APPARATUS AND METHOD OF CONTROLLING ION IMPLANTATION APPARATUS

In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member. 1. An ion implantation apparatus comprising:an interruption member that interrupts an ion beam in the middle of a beam line;a plasma shower device that is provided at the downstream side of the interruption member in the beam line; anda control unit that causes the interruption member to interrupt the ion beam during an ignition start period of the plasma shower device.2. The ion implantation apparatus according to claim 1 , further comprising:at least one high-voltage electric field type electrode,wherein the interruption member is provided at the upstream side of the electrode in the beam line.3. The ion implantation apparatus according to claim 1 , further comprising:a gas supply unit that supplies a source gas to the plasma shower device,wherein the control unit starts the supply of the source gas from the gas supply unit after the ion beam is interrupted by the interruption member.4. The ion implantation apparatus according to claim 3 ,Wherein, after the gas supply unit starts to supply the source gas at a first flow rate, the control unit continues the supply of the source gas from the gas supply unit at a second flow rate smaller than the first flow rate.5. The ion implantation apparatus according to claim 1 ,wherein the control unit cancels the interruption of the ion ...

Cylindrical Shaped Arc Chamber For Indirectly Heated Cathode Ion Source

An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species. 1. An indirectly heated cathode (IHC) ion source , comprising:a cylindrical housing having a first open end and a second open end opposite the first open end, wherein the cylindrical housing is metal;a cathode disposed in the first open end of the cylindrical housing, such that a front surface of the cathode is disposed in the cylindrical housing; anda repeller proximate the second open end, wherein the cylindrical housing, the cathode and the repeller define an arc chamber.2. The IHC ion source of claim 1 , wherein an inner diameter of the cylindrical housing is greater than an outer diameter of the cathode at all locations along a central axis of the cylindrical housing.3. The IHC ion source of claim 2 , wherein a radial spacing exists between the cathode and the cylindrical housing.4. The IHC ion source of claim 3 , wherein feedgas in the arc chamber escapes through the radial spacing.5. The IHC ion source of claim 2 , wherein a distance between the outer diameter of the cathode and the inner diameter of the cylindrical housing is less than 1 mm.6. The IHC ion source of claim 1 , wherein an outer diameter of the repeller is less than an inner diameter of the cylindrical housing such that the repeller is disposed in the second open end.7. The ...

SCAN AND CORRECTOR MAGNET DESIGNS FOR HIGH THROUGHPUT SCANNED BEAM ION IMPLANTER

An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece. 1. An ion implantation system , comprising:an ion source configured to form an ion beam;a mass analyzer configured to mass analyze the ion beam;a power source configured to provide a scan waveform;a scanner configured to selectively scan the ion beam along a scan path based on the scan waveform, therein defining a scanned ion beam; anda corrector apparatus configured to transport the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece, wherein one or more of the scanner and corrector apparatus are configured to provide the scanned ion beam having a flux that increases from a first beam flux associated with a central region of the workpiece to a second beam flux associated with an edge of the workpiece.2. The ion implantation system of claim 1 , wherein the corrector apparatus comprises a plurality of magnetic poles configured to define a non-uniform flux profile of the scanned ion beam at the workpiece.3. The ion implantation system of claim 2 , wherein the non-uniform flux profile is generally defined by the first beam flux associated with the edge of the workpiece and the second beam flux associated with the central region of the workpiece.4. The ion implantation system of claim 3 , wherein the ...

Dual Cathode Ion Source

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller. 1. An ion source , comprising:a first end wall and a second end wall;chamber walls connected to the first end wall and the second end wall to define an ion source chamber, wherein one of the chamber walls comprises an extraction aperture, wherein a ribbon ion beam is extracted through the extraction aperture;a first cathode disposed proximate the first end wall;a first filament disposed between the first end wall and the first cathode;a first bias power supply to bias the first cathode relative to the first filament;a first filament power supply to supply a first current to the first filament;a second cathode disposed proximate the second end wall;a second filament disposed between the second end wall and the second cathode;a second bias power supply, different from the first bias power supply, to bias the second cathode relative to the second filament; anda second filament power supply to supply a second current to the second filament.2. The ion source of claim 1 , wherein an output of the first bias power supply is different from an output of the second bias power supply claim 1 , so as to change a uniformity of the ribbon ion beam extracted through the extraction aperture.3. The ion source of claim 1 , further comprising a controller to ...

METHOD AND APPARATUS FOR THREE DIMENSIONAL ION IMPLANTATION

A scan system for processing a substrate with an ion beam may include a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis. 1. A scan system for processing a substrate with an ion beam , comprising:a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; anda scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis.2. The scan system of claim 1 , wherein the scanner deflects the ribbon beam through a range of angles about a third axis that is perpendicular to a substrate plane defined by the substrate claim 1 , wherein the ribbon beam impacts the substrate over an ion angular distribution about the third axis.3. The scan system of claim 1 , wherein the scanner comprises a first scan plate and a second scan plate claim 1 , wherein the ribbon beam is transmitted between the first scan plate and second scan plate.4. The scan system of claim 3 , wherein the scan power supply comprises a first power supply to apply a first waveform to the first scan plate and a second power supply to apply a second waveform to the second scan plate claim 3 , wherein the first and second waveform generate the deflecting field as an oscillating deflecting field.5. The scan system of claim 4 , wherein the scan power supply is configured to output a signal to adjust at least one of: a first amplitude of the first waveform and a second amplitude of the second ...

HIGH-ENERGY ION IMPLANTER, BEAM COLLIMATOR, AND BEAM COLLIMATION METHOD

A beam collimator includes a plurality of lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator. Each of the plurality of lens units forms a bow-shaped curved gap and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap. A vacant space is provided between one lens unit of the plurality of lens units and a lens unit that is adjacent to the lens unit. The vacant space is directed in a transverse direction of the collimated beam in a cross section that is perpendicular to the reference trajectory. An inner field containing the reference trajectory is connected to an outer field of the plurality of lens units through the vacant space. 1. A beam collimator of an ion implanter , comprising:a plurality of acceleration and/or deceleration lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator; anda vacuum container that surrounds the plurality of lens units,wherein each of the plurality of lens units forms a bow-shaped curved gap defined by at least two electrode sections and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap,wherein an electrode section on one side of one lens unit of the plurality of lens units and an electrode section on the other side of a lens unit adjacent to the lens unit are formed to have the same potential, andwherein a vacant space is provided between one lens unit of the plurality of lens units and a lens unit adjacent to the lens unit, the vacant space being directed in a direction that perpendicularly intersects a beam collimation plane on the reference trajectory, and an inner field containing the ...

MAGNETIC FIELD FLUCTUATION FOR BEAM SMOOTHING

The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time. 125-. (canceled)26. A method of shaping an ion beam , the method comprising: a laminated core;', 'a plurality of separately driven electromagnets wrapped around the laminated core; and', 'one or more separately driven auxiliary electromagnets wrapped around the laminated core and positioned on an end of the multipole magnet;, 'subjecting an ion beam to a magnetic field generated by a set of multipole magnets to shape an ion beam profile of the ion beam, wherein each multipole magnet of the set of multipole magnets comprisesgenerating a plurality of direct current (DC) drive signals to drive the plurality of electromagnets of each of the set of multipole magnets to generate a quadrupole magnetic field; andgenerating one or more alternating current (AC) drive signals to drive the one or more auxiliary electromagnets of each of the set of multipole magnets to generate a fluctuating magnetic field;wherein the fluctuating magnetic field causes the ion beam profile shape to change continuously to smooth a time-averaged ion beam profile of the ion beam.27. The method of claim 26 , wherein the fluctuating magnetic field is strongest near a center of the set of ...

ENERGY FILTER FOR PROCESSING A POWER SEMICONDUCTOR DEVICE

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure. 1. An implantation ion energy filter comprising:an energy filter body having a structure, wherein the energy filter body is configured to receive implantation ions and to output received implantation ions such that the output implantation ions exhibit a reduced energy as compared to their energy when entering the energy filter body; andwhere the energy filter body is made of an energy filter body material comprising a glass.2. The implantation ion energy filter of claim 1 , wherein the glass does not include silicon dioxide.3. The implantation ion energy filter of claim 1 , wherein the glass comprises at least one ofborosilicate glass,a soda-lime glass,a float glass,a quartz glass,a porcelain,a polymer thermoplastic,a polymer glass,an acrylic glass,polycarbonate,polyethylene terephthalate,a silica doped with at least one dopant, the at least one dopant being selected from a group containing boron, sodium, calcium, potassium and aluminum, zinc, copper, magnesium, germanium,a polymer,polynorbornene,polystyrene,polycarbonate,polyimide, andbenzocyclobutene. This Utility patent application is a divisional application of U.S. Ser. No. 15/602,761 filed May 23, 2017 and claims priority to German Patent Application No. 10 2016 110 429.9, filed Jun. 6, 2016, both of which are incorporated herein by reference.This specification refers to embodiments of an implantation ion energy filter, to embodiments of a method of producing an implantation ion energy filter and to embodiments of processing a power semiconductor device. In particular, this specification is directed to embodiments of an implantation ion energy ...

REFLECTANCE REDUCTION OF SUBSTRATE FOR TRANSMITTING INFRARED LIGHT

Substrates that can act as optical elements for transmitting infrared light and that have low reflectance for infrared light and the assembly of such substrates with a source of infrared light and/or with an infrared-sensitive optical component. The substrates are suitable for cover glasses and optical elements, such as lenses, prisms, or mirrors to be used with infrared light. Ions are implanted into a substrate in order to reduce its reflectance of infrared light. 1. A method of implanting ions to decrease an infrared reflectance in a wavelength range between 800 nm and 3 μm of a substrate for transmitting infrared light , comprising:a. selecting the ions from a mixture of single charge and multicharge ions from ions selected from ions of the group consisting of N, O, He, Ne, Ar, and Kr; and{'sup': 16', '2', '17', '2, 'b. implanting the substrate with a dosage between 10ions/cmand 2×10ions/cm, and an acceleration voltage AV between 5.5 kV and 450 kV.'}2. The method of claim 1 , wherein the ions are implanted in the substrate with a dosage comprised between 10ions/cmand 1.5×10ions/cm.3. The method of claim 1 , wherein the substrate is chosen among the the group consisting of sapphire claim 1 , fused silica claim 1 , and glass.4. The method of claim 3 , wherein the substrate is chosen among the group consisting of soda-lime-silica glass claim 3 , alumina-silicate glass and boro-silicate glass.5. The method of claim 4 , wherein the substrate is a soda-lime glass substrate comprising a content claim 4 , expressed as the total weight of glass percentages:a. total iron (expressed as Fe2O3) 0.002 to 0.06%, andb. Cr2O3 0.0001 to 0.06%.6. The method of claim 1 , wherein the substrate is a plano-optic substrate.7. The method of claim 1 , wherein an average reference reflectance of the substrate in the wavelength range between 800 nm and 3 μm is reduced by at least 1%.8. The method of claim 1 , wherein a reference reflectance of the substrate presents a minimum claim 1 , at ...

Platen support structure

A platen support structure adapted to thermally insulate a heated platen portion from a cold base plate while providing substantially leak-free gas transport therebetween and while allowing thermal expansion and contraction of the platen portion. Various examples provide of the support structure provide a tubular flexure having an internal gas conduit, a platen portion mounting tab connected to the flexure and having an internal gas input slot that is in fluid communication with the internal gas conduit of the flexure, the platen portion mounting tab being adapted for connection to a platen portion of a platen, and a base plate mounting tab connected to the flexure and having an internal gas output slot that is in fluid communication with the internal gas conduit of the flexure, the base plate mounting tab being adapted for connection to a base plate of the platen.

Adjustable Mass Resolving Aperture

Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION

A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials. 1. A dopant gas composition comprising:{'sub': 2', '3, 'a boron-containing dopant gas composition comprising diborane (B2H6) at a level ranging from about 0.1%-10%, Hranging from about 5%-15% and the balance is BF, wherein said B2H6 is selected to have a ionization cross-section higher than that of said BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active boron ions;'}wherein said boron-containing dopant gas composition increases boron ion beam current and extends ion source life in comparison to a beam current generated from boron trifluoride (BF3).2. The dopant gas composition of claim 1 , wherein said B2H6 is at about 2-5% claim 1 , said H2 is at a level ranging from about 5-10% and the balance is BF3.3. The dopant composition of claim 1 , wherein said B2H6 claim 1 , said H2 and balance BF3 is supplied from a single storage and delivery source.4. The dopant composition of claim 1 , wherein said B2H6 and BF3 are supplied in separate storage and delivery sources so as to create the boron-containing dopant composition within a chamber of said ion source.5. The dopant composition of claim 1 , wherein said boron-containing gas composition ...

BIPOLAR WAFER CHARGE MONITOR SYSTEM AND ION IMPLANTATION SYSTEM COMPRISING SAME

A charge monitor having a Langmuir probe is provided, wherein a positive and negative charge rectifier are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively. A positive current integrator is operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage. A negative current integrator is operably coupled to the negative charge rectifier, wherein the negative current integrator is biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage based, at least in part, on the negative threshold voltage. A positive charge counter and a negative charge counter are configured to respectively receive the output from the positive current integrator and negative current integrator in order to provide a respective cumulative positive charge value and cumulative negative charge value associated with the respective positive charge and negative charge. 1. A charge monitor for an ion implantation system , the charge monitor comprising:a Langmuir probe;a positive charge rectifier operably coupled to the Langmuir probe and configured to pass only a positive charge therethrough;a positive current integrator operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage;a positive charge counter configured to receive the output from the positive current integrator and to provide a cumulative positive charge value associated with the positive charge;a negative charge rectifier operably coupled to the Langmuir probe and configured ...

High-Throughput System and Method for Post-Implantation Single Wafer Warm-Up

A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.

Magnetic scanning system for ion implanters

A compact electromagnetic system is disclosed that is capable of scanning an ion beam in two orthogonal directions (e.g., for semiconductor doping or hydrogen induced exfoliation). In particular, according to embodiments of the compact electromagnetic system, the steel yoke, pole pieces, and excitation coils for both the X and Y axis have been integrated into a common structure.

ION IMPLANTATION APPARATUS AND MEASUREMENT DEVICE

A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction. 1. An ion implantation apparatus comprising:a beamline device configured to transport an ion beam with which a wafer is irradiated; anda measurement device configured to measure angle information on the ion beam,wherein the measurement device includes a plurality of slits through which a part of the ion beam passes, a beam current measurement unit provided at a position away from the plurality of slits in a beam traveling direction, and a measurement control unit,wherein the beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction,wherein the plurality of slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction, andwherein the measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement ...

Tapered upper electrode for uniformity control in plasma processing

An upper electrode for use in a substrate processing system includes a lower surface. The lower surface includes a first portion and a second portion and is plasma-facing. The first portion includes a first surface region that has a first thickness. The second portion includes a second surface region that has a varying thickness such that the second portion transitions from a second thickness to the first thickness.

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SAME

A method for manufacturing a semiconductor device includes introducing a group III element to a part of a substrate containing silicon and carbon; introducing oxygen into the part of the substrate; and heating the substrate after introducing the Group III element and the oxygen. 1. A method for manufacturing a semiconductor device , the method comprising:introducing a group III element to a part of a substrate containing silicon and carbon;introducing oxygen into the part of the substrate; andheating the substrate after introducing the Group III element and the oxygen.2. The method according to claim 1 , wherein the group III element is aluminum or boron.3. The method according to claim 1 , wherein a dose amount of the oxygen is not less than 0.1 times and not more than 1 time a dose amount of the group III element.4. The method according to claim 1 , wherein the introducing the Group III element and the introducing the oxygen are performed under heating the substrate in a temperature range of not less than 250° C. and not more than 500° C.5. The method according to claim 1 , wherein a heating temperature in the heating substrate is not less than 1700° C. and not more than 1900° C.6. The method according to claim 1 , further comprising:forming a conductive member on the part of the substrate with an ohmic connection between the conductive member and the part of the substrate.7. A method for manufacturing a semiconductor device claim 1 , the method comprising:introducing a group V element to a part of a substrate containing silicon and carbon;introducing oxygen into the part of the substrate; andheating the substrate after introducing the group V element and the oxygen.8. The method according to claim 7 , wherein a heating temperature in the heating substrate is not less than 1700° C. and not more than 1900° C.9. The method according to claim 7 , further comprising:forming a conductive member on the part of the substrate with an ohmic connection between the ...

Technique For Temperature Measurement And Calibration Of Semiconductor Workpieces Using Infrared

An improved system and method of measuring the temperature of a workpiece in a processing chamber is disclosed. Because silicon has very low emissivity in the infrared band, a coating is disposed on at least a portion of the workpiece. This coating may be graphite or any other material that can be readily applied, and has a relatively constant emissivity over temperature in the infrared spectrum. In one embodiment, a coating of graphite is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. This technique can be used to calibrate a processing chamber, validate operating conditions within the processing chamber, or to develop a manufacturing process. 1. A processing system , comprising:a platen;a calibration workpiece disposed on said platen;an IR camera using a range of wavelengths in an infrared spectrum to determine a temperature of said calibration workpiece; anda coating disposed on a portion of an upper surface of said calibration workpiece, said coating having a nearly constant emissivity over a range of temperatures at said range of wavelengths.2. The processing system of claim 1 , wherein said range of temperatures is between 0° C. and 600° C.3. The processing system of claim 1 , wherein said coating comprises carbon.4. The processing system of claim 1 , wherein said coating is applied along a diameter of said upper surface.5. The processing system of claim 1 , wherein said coating is applied on an entirety of said upper surface.6. The processing system of claim 1 , wherein said range of wavelengths is between 1.0 μm and 14.0 μm.7. A method for calibrating a workpiece process claim 1 , comprising:maintaining a heated platen in a process chamber at an elevated temperature greater than 100° C.;introducing a calibration workpiece to said process chamber, said calibration workpiece comprises a coating on a portion of its upper surface, said coating having a nearly constant ...

Method and device for implanting ions in wafers

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.

METHOD OF MIXING UPSTREAM AND DOWNSTREAM CURRENT MEASUREMENTS FOR INFERENCE OF THE BEAM CURRENT AT THE BEND OF AN OPTICAL ELEMENT FOR REALTIME DOSE CONTROL

An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current. 1. An ion implantation system , comprising:an ion source configured to form an ion beam;a mass analyzer configured to mass analyze the ion beam;a bending element downstream of the mass analyzer;a first measurement apparatus positioned downstream of the bending element and configured to determine a first ion beam current of the ion beam;a second measurement apparatus positioned upstream of the bending element and configured to determine a second ion beam current of the ion beam;a workpiece scanning apparatus configured to scan a workpiece through the ion beam; anda controller configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current, wherein the determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.2. The ion implantation system of claim 1 , wherein one or more of the first measurement apparatus and second measurement apparatus comprise one or more of a faraday claim 1 , a terminal return current measurement apparatus claim 1 , and an energy filter ...

Method and apparatus for neutral beam processing based on gas cluster ion beam technology

A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.

DOPANT COMPOSITIONS FOR ION IMPLANTATION

The present invention relates to an improved composition for ion implantation. The composition comprises a dopant source and an assistant species wherein the assistant species in combination with the dopant gas produces a beam current of the desired dopant ion. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition. 2. The composition of claim 1 , wherein the non-carbon target ionic species creates the ion beam current at a level higher than that generated solely from the dopant source.3. The composition of claim 1 , wherein the non-carbon target ionic species creates the ion beam current at level equal to that generated solely from the dopant source.4. The composition of claim 1 , wherein any atom of the dopant source or the assistant species is isotopically enriched greater than natural abundance levels.5. The composition of claim 1 , wherein the assistant species further comprises the lower ionization energy to be at least 5% lower than the ionization energy of the dopant source.6. The composition of claim 1 , wherein the assistant species further comprises the ratio of BDE of the weakest bond of the assistant species to the lower ionization energy of the assistant species to be 0.25 or higher.7. The composition of claim 1 , wherein the assistant species further comprises the ratio of BDE of the weakest bond of the assistant species to the lower ionization energy of the assistant species to be 0.3 or higher.8. The composition of claim 1 , further comprising the TICS to be greater than 3 Å.9. The composition of claim 1 , further comprising the TICS to be greater than 4 Å.10. The composition of claim 1 , further comprising the TICS to be greater than 5 Å.11. The composition of claim 1 , wherein the assistant species further comprises the ratio of BDE of the weakest bond of the assistant ...

ION IMPLANTER AND ION IMPLANTATION METHOD

A beamline unit of an ion implanter includes a steering electromagnet, a beam scanner, and a beam collimator. The beamline unit contains a reference trajectory of an ion beam. The steering electromagnet deflects the ion beam in an x direction perpendicular to a z direction. The beam scanner deflects the ion beam in the x direction in a reciprocating manner to scan the ion beam. The beam collimator includes a collimating lens that collimates the scanned ion beam in the z direction along the reference trajectory, and the collimating lens has a focus at a scan origin of the beam scanner. A controller corrects a deflection angle in the x direction in the steering electromagnet so that an actual trajectory of the deflected ion beam intersects with the reference trajectory at the scan origin on an xz plane. 1. An ion implanter comprising: a beam deflector capable of deflecting an ion beam in an x direction;', 'a beam scanner disposed downstream of the beam deflector and capable of deflecting the ion beam in the x direction in a reciprocating manner to scan the ion beam; and', 'a beam collimator disposed downstream of the beam scanner and comprising a collimating lens that collimates the scanned ion beam in a z direction, the collimating lens having a focus at a scan origin of the beam scanner,', 'wherein the beamline unit contains a reference trajectory of the ion beam, the z direction represents a direction along the reference trajectory, and the x direction represents a direction perpendicular to the z direction; and, 'a beamline unit comprisinga controller that controls at least the beam deflector of the beamline unit,wherein the controller corrects an x-direction deflection angle in the beam deflector so that an actual trajectory of the ion beam deflected by the beam deflector intersects with the reference trajectory at the scan origin on an xz plane.2. The ion implanter according to claim 1 , wherein the beamline unit comprises a beamline upstream part claim 1 , a ...

ION IMPLANTATION APPARATUS AND MEASUREMENT DEVICE

An ion implantation apparatus includes a first angle measuring instrument configured to measure angle information on an ion beam in a first direction, a second angle measuring instrument configured to measure angle information on the ion beam in a second direction, a relative movement mechanism configured to change relative positions of the first angle measuring instrument and the second angle measuring instrument with respect to the ion beam in a predetermined relative movement direction, and a control device configured to calculate angle information on the ion beam in a third direction perpendicular to both a beam traveling direction and the relative movement direction based on the angle information on the ion beam in the first direction measured by the first angle measuring instrument and the angle information on the ion beam in the second direction measured by the second angle measuring instrument. 1. An ion implantation apparatus comprising:a beamline device configured to transport an ion beam with which a wafer is irradiated;a first angle measuring instrument configured to measure angle information on the ion beam in a first direction perpendicular to a beam traveling direction;a second angle measuring instrument configured to measure angle information on the ion beam in a second direction perpendicular to the beam traveling direction and crossing the first direction;a relative movement mechanism configured to change relative positions of the first angle measuring instrument and the second angle measuring instrument with respect to the ion beam in a predetermined relative movement direction perpendicular to the beam traveling direction and not perpendicular to both the first direction and the second direction; anda control device configured to calculate angle information on the ion beam in a third direction perpendicular to both the beam traveling direction and the relative movement direction based on the angle information on the ion beam in the first ...

Ion Source With Biased Extraction Plate

An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.

Dual Cathode Ion Source

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

Angular Scanning Using Angular Energy Filter

An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

ION IMPLANTER PROVIDED WITH A PLURALITY OF PLASMA SOURCE BODIES

The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS, CS free from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI-BCS, BCI-BCS per source body CS, CS 1123411221234. An ion implanter comprising an enclosure (ENV) having arranged therein a substrate carrier (PPS) connected to a substrate power supply (ALT) via a high voltage electrical passage (PET) , the enclosure (ENV) being provided with pump means (PP , PS) , said enclosure (ENV) also having at least two cylindrical source bodies (CS , CS , CS , CS) free from any obstacle and arranged facing said substrate carrier (PPS); the ion implanter being characterized in that it includes at least one confinement coil (BCI-BCS , BCI-BCS) per source body (CS , CS , CS , CS).212341234. An ion implanter according to claim 1 , characterized in that each of said source bodies (CS claim 1 , CS claim 1 , CS claim 1 , CS) is provided with an external radiofrequency antenna (ANT claim 1 , ANT claim 1 , ANT claim 1 , ANT).31234. An ion implanter according to claim 1 , characterized in that it includes a common radiofrequency generator (RF) for all of said antennas (ANT claim 1 , ANT claim 1 , ANT claim 1 , ANT).41234. An ion implanter according to claim 3 , characterized in that it includes a single tuning box (BA) arranged between said radiofrequency generator (RF) and said antennas (ANT claim 3 , ANT claim 3 , ANT claim 3 , ANT).5. An ion implanter according to claim 3 , characterized in that it includes claim 3 , downstream from said radiofrequency generator (RF) claim 3 , a tuning box (BA) followed by a separator (SEP).612341234. An ion implanter according to ...

IN-SITU WAFER TEMPERATURE MEASUREMENT AND CONTROL

A thermal chuck selectively retains a workpiece on a clamping surface. The thermal chuck has one or more heaters to selectively heat the clamping surface and the workpiece. A thermal monitoring device determines a temperature of a surface of the workpiece when the workpiece resides on the clamping surface, defining one or more measured temperatures. A controller selectively energizes the one or more heaters based on the one or more measured temperatures. The thermal monitoring device may be one or more of a thermocouple or RTD in selective contact with the surface of the workpiece and an emissivity sensor or pyrometer not in contact with the surface. The thermal chuck can be part of an ion implantation system configured to implant ions into the workpiece. The controller can be further configured to control the heaters based on the measured temperatures. 1. A thermal chuck system , comprising:a thermal chuck apparatus configured to selectively retain a workpiece on a clamping surface thereof, wherein the thermal chuck apparatus comprises one or more heaters configured to selectively heat the clamping surface, thereby selectively heating the workpiece;a thermal monitoring device configured to determine a temperature of a surface of the workpiece when the workpiece resides on the clamping surface, therein defining a measured temperature; anda controller configured to selectively energize the one or more heaters based on the measured temperature.2. The thermal chuck system of claim 1 , wherein the thermal monitoring device comprises one or more direct contact thermal devices configured to directly contact a surface of the workpiece.3. The thermal chuck system of claim 2 , wherein the one or more direct contact thermal devices comprise one or more of a thermocouple (TC) and a resistance temperature detector (RTD).4. The thermal chuck system of claim 2 , wherein each of the one or more direct contact thermal devices comprises a respective pair of redundant thermal devices ...

ION IMPLANTATION APPARATUS

An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode. 1. An ion implantation apparatus including a scanning unit , the scanning unit comprising:a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction perpendicular to the reference trajectory, anda downstream electrode device disposed downstream of the scanning electrode device and provided with openings through which the ion beam scanned in the horizontal direction passes,wherein the scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween, andthe downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central ...

Ion implantation apparatus

An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.

ION SOURCE AND ION IMPLANTATION APPARATUS

An ion source for improving beam transport efficiency regarding a ribbon beam is provided. The plasma generation container is formed with a beam extraction port at an end thereof. The shielding member plugs the beam extraction port and comprises three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array. 1. An ion source comprising:a plasma generation container formed with a beam extraction port at an end thereof; anda shielding member plugging the beam extraction port and comprising three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array.2. The ion source as recited in claim 1 , further comprising a plurality of electrodes for extracting the ribbon beam from the plasma generation container claim 1 ,3. The ion source as recited in claim 2 , wherein the shielding member is clamped between the plasma generation container and an electrode of the plurality of electrodes that is disposed closest to the plasma generation container.3. The ion source as recited in claim 2 , wherein an electrode of the plurality of electrodes that is disposed closest to the plasma generation container additionally serves as the shielding member.4. An ion implantation apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the ion source as recited in ; and'}a current ...

LOW PROFILE EXTRACTION ELECTRODE ASSEMBLY

A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of the main body, a plurality of spaced apart mounting legs extending from a second face of the main body opposite the first face, the plurality of spaced apart mounting legs extending from the second face offset from the plurality of spaced apart mounting legs extending from the first face in a direction orthogonal to an axis of the main body, the low profile extraction electrode assembly further comprising a ground electrode fastened to the mounting legs extending from the first face, and a suppression electrode fastened to the mounting legs extending from the second face, wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode. 1. A low profile extraction electrode assembly comprising:an insulator;a ground electrode fastened to a first side of the insulator; anda suppression electrode fastened to a second side of the insulator opposite the first side; a main body;', 'a mounting leg extending from a first face of the main body and fastened to the ground electrode; and', 'a mounting leg extending from a second face of the main body and fastened to the suppression electrode;', 'wherein the mounting leg extending from the second face of the main body is offset from the mounting leg extending from the first face of the main body in a direction orthogonal to an axis of the main body., 'wherein the insulator comprises2. The low profile extraction electrode assembly of claim 1 , wherein the mounting leg extending from the first face of the main body comprises a plurality of spaced apart mounting legs extending from the first face of the main body claim 1 , the mounting leg extending from the second face of the main body comprises a plurality of spaced apart mounting legs extending from the second ...

BEAM IRRADIATION APPARATUS AND BEAM IRRADIATION METHOD

Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target. 1. A beam irradiation apparatus that is configured to irradiate a processed object with a charged particle beam , comprising:a beam scanner that is configured such that the charged particle beam is reciprocatively scanned in a predetermined scanning direction;a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; anda data processor that calculates an effective irradiation emittance of the charged particle beam using results measured by the measurement device,wherein the measurement device measures a time dependent value for angular distribution of the charged particle beam for a period during which the charged particle beam to be reciprocatively scanned in the scanning direction passes over the region of the measurement target and is incident into the measurement device,the data processor transforms time information included in the time depending value for the angular distribution measured by the ...

ION IMPLANTATION APPARATUS AND CONTROL METHOD FOR ION IMPLANTATION APPARATUS

Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port. 1. An ion implantation apparatus comprising:a vacuum processing chamber in which an ion implantation process for a wafer is performed;one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber;an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber;an intermediate conveyance mechanism that is disposed in the intermediate conveyance chamber and performs wafer conveyance between the load lock chamber and the intermediate conveyance chamber and wafer conveyance between the intermediate conveyance chamber and the vacuum processing chamber;a load lock chamber-intermediate conveyance chamber communication mechanism that includes a load lock chamber-intermediate conveyance chamber communication port for communication between the load lock chamber and the intermediate conveyance chamber and a gate valve capable of sealing the load lock chamber-intermediate conveyance chamber communication port; andan intermediate conveyance chamber- ...

ENERGY FILTER FOR PROCESSING A POWER SEMICONDUCTOR DEVICE

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure. 1. A method of producing an implantation ion energy filter , comprising:creating a preform having a first structure;providing an energy filter body material; andstructuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.2. The method of claim 1 , wherein the second structure is complementary to the first structure.3. The method of claim 1 , wherein structuring the energy filter body material includes carrying out an imprint step using the preform as a stamp.4. The method of claim 3 , wherein the imprint step includes an embossing step.5. The method of claim 1 , wherein structuring the energy filter body material includes carrying out at least one of casting processing step and a molding processing step.6. The method of claim 1 , wherein a plurality of energy filter bodies claim 1 , each of which having the second structure claim 1 , are established by using the same preform.7. The method of claim 1 , wherein the energy filter body material comprises a glass and structuring the energy filter body material includes warming up the energy filter body material to a temperature of at least 90% of a glass-transition temperature of the energy filter body material.8. The method of claim 1 , wherein creating the preform comprises processing a base layer by carrying out at least one of an etch processing step and a mechanical processing step claim 1 , wherein the processed base layer forms the preform.9. The method of claim 1 , wherein the preform is made of a material comprising at least one of a semiconductor claim 1 , a ceramic ...

Superjunction Structure in a Power Semiconductor Device

A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.

STRUCTURES INCLUDING ION BEAM-MIXED LITHIUM ION BATTERY ELECTRODES, METHODS OF MAKING, AND METHODS OF USE THEREOF

Embodiments of the present disclosure provide for a structure, methods of making the structure, methods of using the structure, and the like. In an embodiment, the structure includes a film having one or more areas of the film being ion beam-mixed. In a particular embodiment, the structure includes a germanium film having one or more areas of the germanium film being ion beam-mixed. 1. A structure , comprising:a film disposed on the substrate, wherein one or more areas of the film have been ion beam-mixed to form an ion beam-mixed film.2. The structure of claim 1 , wherein the film is selected from the group consisting of: a germanium film claim 1 , a silicon film claim 1 , a germanium-silicon film claim 1 , sulfur film claim 1 , sulfur compound based film claim 1 , vandium based oxide film claim 1 , a MFfilm claim 1 , where M=Fe claim 1 , Cu claim 1 , Na claim 1 , x is 1 to 3.3. The structure of claim 1 , wherein the film is a germanium film.4. The structure of claim 3 , wherein the germanium film has a thickness of about 100 nm to 2000 nm.5. The structure of claim 3 , wherein the ion beam-mixed film is an ion beam-mixed germanium film.6. The structure of claim 5 , wherein the ion beam-mixed germanium film has a thickness of about 0.01 μm and 10 μm.7. The structure of claim 6 , wherein the substrate is a material selected from: Ni foil and Ni/Fe foil.8. The structure of claim 1 , wherein the substrate is a material selected from: Al claim 1 , Ni claim 1 , Fe claim 1 , Cu claim 1 , stainless steel claim 1 , a non-lithiating material claim 1 , and a combination thereof.9. A method of making a structure claim 1 , comprising:providing a structure having a film disposed on a substrate; andforming an ion beam-mixed film by subjecting the film to ion beam implantation.10. The method of claim 9 , wherein the film is selected from the group consisting of: a germanium film claim 9 , a silicon film claim 9 , and a germanium-silicon film.11. The method of claim 10 , wherein ...

COMPACT HIGH ENERGY ION IMPLANTATION SYSTEM

An apparatus may include an ion source, arranged to generate an ion beam at a first ion energy. The apparatus may further include a DC accelerator column, disposed downstream of the ion source, and arranged to accelerate the ion beam to a second ion energy, the second ion energy being greater than the first ion energy. The apparatus may include a linear accelerator, disposed downstream of the DC accelerator column, the linear accelerator arranged to accelerate the ion beam to a third ion energy, greater than the second ion energy. 1. An apparatus , comprising:an ion source and extraction system, arranged to generate an ion beam at a first ion energy;a DC accelerator column, disposed downstream of the ion source, and arranged to accelerate the ion beam to a second ion energy, the second ion energy being greater than the first ion energy; anda linear accelerator, disposed downstream of the DC accelerator column, the linear accelerator arranged to accelerate the ion beam to a third ion energy, greater than the second ion energy.2. The apparatus of claim 1 , wherein the linear accelerator comprises at least one triple gap accelerator stage.3. The apparatus of claim 2 , wherein the linear accelerator comprises at least three triple gap accelerator stages.4. The apparatus of claim 1 , wherein the linear accelerator comprises at least one accelerator stage claim 1 , comprising a resonator claim 1 , and a high frequency generator claim 1 , coupled to the resonator claim 1 , the high frequency generator producing a signal having a frequency greater than 20 MHz.5. The apparatus of claim 4 , wherein the signal comprises a frequency of 40 MHz.6. The apparatus of claim 1 , the linear accelerator further comprising a buncher claim 1 , disposed between the DC accelerator column and the linear accelerator.7. The apparatus of claim 1 , wherein the linear accelerator comprises a plurality of accelerator stages claim 1 , wherein at least one accelerator stage is coupled to a first ...

Ion implantation method and ion implanter for performing the same

The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.

Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions

A method of manufacturing a semiconductor device is described, wherein clusters of N- and P-type dopants are implanted to form the transistor structures in CMOS devices. For example, As 4 H x + clusters and either B 10 H x − or B 10 H x + clusters are used as sources of As and B doping, respectively, during the implants. An ion implantation system is described for the implantation of cluster ions into semiconductor substrates for semiconductor device manufacturing. A method of producing higher-order cluster ions of As, P, and B is presented, and a novel electron-impact ion source is described which favors the formation of cluster ions of both positive and negative charge states. The use of cluster ion implantation, and even more so the implantation of negative cluster ions, can significantly reduce or eliminate wafer charging, thus increasing device yields. A method of manufacturing a semiconductor device is further described, comprising the steps of: providing a supply of dopant atoms or molecules into an ionization chamber, combining the dopant atoms or molecules into clusters containing a plurality of dopant atoms, ionizing the dopant clusters into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ion by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant clusters contain n dopant atoms where n can be 2, 3, 4 or any integer number. This method provides the advantages of increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy. This is an effective method for making shallow transistor junctions, where it is desired to implant with a low energy per dopant atom.

Methods for cleaning ion implanter components

A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.

Sorbent-based gas storage and delivery system for dispensing of high-purity gas, and apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing same

A sorbent-based gas storage and dispensing system, including a storage and dispensing vessel containing a solid-phase physical sorbent medium having a sorbate gas physically adsorbed thereon. A chemisorbent material is provided in the vessel to chemisorb the impurities for gas phase removal thereof in the storage and dispensing vessel. Desorbed sorbate gas is discharged from the storage and dispensing vessel by a dispensing assembly coupled to the vessel. The chemisorbent may be provided in a capsule including an impurity-permeable, but sorbate gas-impermeable membrane, and installed in the vessel at the time of sorbent material loading. Semiconductor manufacturing processes and products manufactured by such processes are described.

離子佈植設備及離子佈植方法

Wafer Positioning Method and Apparatus

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

Ceramic coating and ion beam mixing device to improve corrosion resistance at high temperature and method of modifying interface of thin film using same

본 발명은 고온 내 부식성 향상을 위한 세라믹 코팅 및 이온빔 믹싱 장치 및 이를 이용한 박막의 계면을 개질하는 방법에 관한 것으로, 본 발명에 따라 상기 코팅 및 이온 빔 믹싱 장치를 이용하여 공정을 한 시편은 접합성이 향상되고 모재를 강화시켜 고온에서의 열응력에 대한 저항뿐만 아니라 수소생산을 위한 황산분해기에 사용될 소재의 고온 부식 저항성이 크게 향상될 수 있다. The present invention relates to a ceramic coating and ion beam mixing device for improving the corrosion resistance at high temperature, and a method for modifying the interface of a thin film using the same, and the specimens processed using the coating and ion beam mixing device according to the present invention has a bondability By improving and strengthening the base material, the high temperature corrosion resistance of the material to be used in the sulfuric acid cracker for hydrogen production as well as the resistance to thermal stress at high temperatures can be greatly improved. 코팅 및 이온빔 믹싱, 박막 계면 개질 Coating and ion beam mixing, thin film interface modification

Method and apparatus for improving beam stability in high current gas cluster ion beam processing system