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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 3341. Отображено 100.
29-03-2012 дата публикации

Adapter Ring For Silicon Electrode

Номер: US20120073752A1
Автор: Terry Parde
Принадлежит: SunEdison Inc

Methods and systems are provided for retrofitting wafer etching systems. The methods and systems use an adapter ring to retrofit wafer etching systems designed for use with multiple piece electrodes such that single piece electrodes can be used in the etching systems. A portion of the adapter ring is disposed in a receptacle formed in a thermal coupled plate in the wafer etching system. Another portion of the adapter ring is positioned in a channel formed in an upper electrode.

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Номер записи: 1
26-04-2012 дата публикации

Substrate support with symmetrical feed structure

Номер: US20120097332A1
Автор: Anchel Sheyner, Andrew Nguyen, Douglas A. Buchberger, Jr., Xiaoping Zhou, Xing Lin
Принадлежит: Applied Materials Inc

Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

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Номер записи: 2
28-06-2012 дата публикации

Variable-Density Plasma Processing of Semiconductor Substrates

Номер: US20120164834A1
Автор: Douglas Keil, Edward Augustyniak, Kevin Jennings, Mohamed Sabri, Sunil Kapoor
Принадлежит: Novellus Systems Inc

Methods and hardware for generating variable-density plasmas are described. For example, in one embodiment, a process station comprises a showerhead including a showerhead electrode and a substrate holder including a mesa configured to support a substrate, wherein the substrate holder is disposed beneath the showerhead. The substrate holder includes an inner electrode disposed in an inner region of the substrate holder and an outer electrode being disposed in an outer region of the substrate holder. The process station further comprises a plasma generator configured to generate a plasma in a plasma region disposed between the showerhead and the substrate holder, and a controller configured to control the plasma generator, the inner electrode, the outer electrode, and the showerhead electrode to effect a greater plasma density in an outer portion of the plasma region than in an inner portion of the plasma region.

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Номер записи: 3
19-07-2012 дата публикации

Semiconductor processing system and methods using capacitively coupled plasma

Номер: US20120180954A1
Автор: Dmitry Lubomirsky, Jang-Gyoo Yang, Kien N. Chuc, Matthew L. Miller, Qiwei Liang, Shankar Venkataraman, Xinglong Chen
Принадлежит: Applied Materials Inc

Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

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Номер записи: 4
04-10-2012 дата публикации

Ceiling electrode plate and substrate processing apparatus

Номер: US20120247672A1
Автор: Yoshiyuki Kobayashi
Принадлежит: Tokyo Electron Ltd

In a plasma processing apparatus, a ceiling electrode plate provided to face a substrate holding stage via a process space contacts and is supported by an electrode support by interposing a cooling plate, and a heat-transfer sheet is provided in a contact surface between the ceiling electrode plate and the cooling plate. The heat-transfer sheet has thermal conductivity of 0.5 to 2.0 W/m·K. The heat-transfer sheet is provided of a heat-resistant adhesive agent or a rubber including silicon, or the heat-transfer sheet is formed of a ceramic filler including oxide, nitride, or carbide. The ceramic filler of 25 to 60 volume % is contained in the heat-resistant adhesive agent or the rubber. A thickness of the heat-transfer sheet is in a range between 30 and 80 μm, and the heat-transfer sheet is not provided in a predetermined area around gas holes of the ceiling electrode plate.

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Номер записи: 5
02-05-2013 дата публикации

Mixed Acid Cleaning Assemblies

Номер: US20130104942A1
Автор: Armen Avoyan, Cliff La Croix, Hong Shih, John Daugherty
Принадлежит: Lam Research Corp

In one embodiment, a cleaning assembly may include a modular electrode sealing housing, an acid injection inlet, and a fluid injection inlet. The modular electrode sealing housing may include a high pressure closure member that contains a first cleaning volume and a low pressure closure member that contains a second cleaning volume. The acid injection inlet can be in fluid communication with the first cleaning volume of the high pressure closure member. The fluid injection inlet can be in fluid communication with the second cleaning volume of the low pressure closure member. During normal operation, a showerhead electrode can be sealed within the modular electrode sealing housing such that the first cleaning volume is located on a first side and the second cleaning volume is located on a second side of the showerhead electrode.

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Номер записи: 6
27-06-2013 дата публикации

Plasma cvd apparatus, method for forming thin film and semiconductor device

Номер: US20130160711A1
Автор: Hideharu Nobutoki, Naoki Yasuda, Teruhiko Kumada
Принадлежит: Individual

A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

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Номер записи: 7
07-11-2013 дата публикации

Capacitively coupled plasma source with rf coupled grounded electrode

Номер: US20130292057A1
Автор: Kartik Ramaswamy, Steven Lane
Принадлежит: Applied Materials Inc

An overhead RF coupling chamber couples RF power to a ceiling electrode of a plasma reactor chamber, the RF coupling chamber having a resonant annular volume defined by coaxial cylindrical conductors, one of which is coupled to an RF power source, the chamber ceiling having an annular gap around the electrode, and the resonant annular volume being aligned with the annular gap so that the resonant annular volume opens into the interior of the main chamber, thereby enhancing the electrical length of the RF coupling chamber.

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Номер записи: 8
09-01-2014 дата публикации

Plasma System, Chuck and Method of Making a Semiconductor Device

Номер: US20140011356A1
Автор: Manfred Engelhardt
Принадлежит: INFINEON TECHNOLOGIES AG

A chuck, a system including a chuck and a method for making a semiconductor device are disclosed. In one embodiment the chuck includes a first conductive region configured to be capacitively coupled to a first RF power generator, a second conductive region configured to be capacitively coupled to a second RF power generator and an insulation region that electrically insulates the first conductive region from the second conductive region.

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Номер записи: 9
01-01-2015 дата публикации

PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM

Номер: US20150001181A1
Автор: Fukasawa Kimihiro, Kanaya Kazuhiro, Ogi Tatsuya, Ozawa Wataru
Принадлежит:

Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed. 1. A plasma processing method using a parallel flat-panel type plasma processing apparatus having a processing chamber provided with a first electrode and a second electrode where a placing table serves as the first electrode configured to place a substrate , and a high-frequency power is applied between the first and second electrodes to convert a processing gas into plasma thereby performing a plasma processing for the substrate , the method comprising:setting the temperature of the second electrode in the plasma processing;compensating the set temperature of the second electrode set in the setting process to become lower than the set temperature of the second electrode according to a used time elapsed after starting using a new second electrode; andcontrolling a temperature adjusting mechanism for adjusting the temperature of the second electrode based on the set temperature of the second electrode set in the setting process and the compensated temperature of the second electrode compensated in the compensating process.2. The plasma processing method of ...

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Номер записи: 10
06-01-2022 дата публикации

CONTROL METHOD FOR MULTI-ZONE ACTIVE-MATRIX TEMPERATURE CONTROL IN PLASMA PROCESSING APPARATUS

Номер: US20220005677A1
Автор: Ni Tuqiang, Rin Sha, Wu Dee, Zuo Rason
Принадлежит:

Method for multi-zone temperature control system having temperature control matrix and gate driver; N*M temperature control modules form N-row M-column matrix, power supply line, and power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate being connected with the power supply line, and the power return line through the temperature control unit, respectively. In the temperature control matrix, one ends, which are connected with a power return line, of the temperature control units of temperature control modules in a same row or same column are serially connected, and connected with the power supply line; one ends, which are connected with the power supply line at same row or same column are serially connected, and connected with the power supply line. 1. A method of temperature control for a multi-zone active-matrix temperature control system , wherein , the multi-zone active-matrix temperature control system comprises a temperature control matrix and a gate driver; the temperature control matrix comprises: temperature control modules forming a matrix , a power supply line , and a power return line; each temperature control module comprises: a heater; a semiconductor switch with a gate electrode connected to the gate driver , the semiconductor switch further including other two electrodes first electrode being connected to the power supply line , and second electrode connected to the power return line through the heater , respectively , selectively connect said two electrodes according to the signal on gate electrode ,the temperature control method comprising:supplying power, by the power supply line, to the temperature control modules in a temperature adjusting zone;turning on the semiconductor switches corresponding to the temperature adjusting zone by the ...

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Номер записи: 11
04-01-2018 дата публикации

FLEXIBLE SENSOR

Номер: US20180004318A1
Автор: AHMED Khaled, Majhi Prashant
Принадлежит:

Systems, apparatuses, and/or methods to manufacture and/or implement a sensor film, a composite electrode, and/or a computing device such as a flexible device. The sensor film may include a random network of metal lines and graphene interconnecting the metal lines. The composite electrode may be formed from the sensor film. In addition, the composite electrode may include a first portion including a metal layer in a graphene layer, wherein the metal layer is randomly located in the graphene layer, and a second portion excluding the metal layer and including the graphene layer. The sensor film may be patterned to include any composite electrode configuration, such as an antenna electrode configuration, a touch electrode configuration, and so on. Thus, the flexible device may include a flexible touch screen. 1. A sensor film comprising:a random network of metal lines, andgranphene interconnecting the metal lines.2. The sensor film of claim 1 , further including a flexible substrate attached to the sensor film.3. The sensor film of claim 1 , further including a composite electrode from the sensor film comprising:a first portion including a metal layer in a graphene layer, anda second portion excluding the metal layer and including the graphene layer.4. The sensor film of claim 3 , wherein one or more of the sensor film or the composite electrode is to provide a sheet resistance of about 1 ohm/square to about 10 ohm/square and a transmittance of at least about 90%.5. A composite electrode comprising:a first portion including a metal layer in a graphene layer, wherein the metal layer is randomly located in the graphene layer, anda second portion excluding the metal layer and including the graphene layer.6. The composite electrode of claim 5 , wherein the metal layer includes a transition metal.7. The composite electrode of claim 5 , wherein the graphene layer includes single-layer graphene claim 5 , bi-layer graphene claim 5 , tri-layer graphene claim 5 , few-layer ...

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Номер записи: 12
05-01-2017 дата публикации

POWER DELIVERY SYSTEMS AND MANUFACTURING EQUIPMENT INCLUDING A VARIABLE VACUUM CAPACITOR

Номер: US20170004925A1
Автор: Abrecht Mike, Bigler Walter, Jäggi Philipp, MlLDNER Mark, TANNER Roger
Принадлежит: Comet AG

A variable vacuum capacitor includes two pairs of electrodes ganged together in series such that no moving parts are required to connect electrically to any static pans. Two sets, or gangs, of movable electrodes are connected mechanically and electrically together such that they move together and such that they require no electrical connection to any other part of the device. The ganged arrangement means that the device can be constructed with a smaller diameter, but without significantly increasing the overall length of the device. The variable vacuum capacitor may be a component of e.g., a power delivery system for a plasma process, a power delivery system for surface treatment, semi-conductor manufacturing equipment, photovoltaic manufacturing equipment, and flat panel manufacturing equipment. 1. A power delivery system for a plasma process , comprising: a vacuum enclosure,', 'a first variable electrode assembly comprising one or more first static electrodes and one or more first mobile electrodes,', 'a second variable electrode assembly comprising one or more second static electrodes and one or more second mobile electrodes,', 'a first electrical connection terminal for providing an electrical connection to the one or more first static capacitor electrodes,', 'a second electrical connection terminal for providing an electrical connection to the one or more second static capacitor electrodes,', 'displacement means for displacing the first and/or second mobile electrodes relative to the first and/or second static electrodes respectively, along an axis of the vacuum capacitor,', 'wherein, in the variable vacuum capacitor,', 'the first and second electrode assemblies are ganged along the axis such that the first mobile electrode assembly is offset along the axis by a gang offset distance from the second electrode assembly, and', 'the variable vacuum capacitor comprises mobile electrode linkage means for providing a kinematic linkage between the one or more first ...

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Номер записи: 13
05-01-2017 дата публикации

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Номер: US20170004956A1
Автор: Ishida Katsuhiro, Kondo Takashi, KUBOTA Toru, Yasuda Kenta
Принадлежит:

A plasma processing method according to an aspect includes: preparing a plasma processing apparatus including: a chamber; a lower electrode; an upper electrode; a focus ring surrounding a peripheral edge of the lower electrode; and an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode; placing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring; introducing process gas into the chamber; generating plasma of the process gas by applying high-frequency power across the upper electrode and the lower electrode; and leveling an interface of a plasma sheath on an upper portion of the substrate with that on an upper portion of the focus ring by generating a magnetic field by supplying a current to the annular coil. 1. A plasma processing method comprising: a chamber;', 'a lower electrode disposed in the chamber;', 'an upper electrode disposed in the chamber and facing the lower electrode;', 'a focus ring disposed in the chamber and surrounding a peripheral edge of the lower electrode; and', 'an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode;, 'preparing a plasma processing apparatus, the plasma processing apparatus comprisingplacing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring;introducing process gas into the chamber;applying high-frequency power across the upper electrode and the lower electrode to generate plasma of the process gas; andgenerating a magnetic field by supplying a current to the annular coil to level an interface of a plasma sheath on an upper portion of the substrate with the interface of the plasma sheath on an upper portion of the focus ring.2. The plasma processing method according to claim 1 ,wherein the leveling of the interface of the plasma sheath reduces the ...

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Номер записи: 14
07-01-2021 дата публикации

SUPPORT UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME

Номер: US20210005419A1
Автор: HAN YU DONG, Kim Hyeon Gyu, KIM Seon Ok, SON HYOUNGKYU
Принадлежит: SEMES CO., LTD.

A support unit provided in an apparatus for treating a substrate using plasma includes a dielectric plate on which the substrate is placed, an electrode plate disposed under the dielectric plate, a power supply rod that applies power to the electrode plate, and a flange that has a shape surrounding the power supply rod and that is spaced apart from the power supply rod. 1. A support unit provided in an apparatus for treating a substrate using plasma , the support unit comprising:a dielectric plate on which the substrate is placed;an electrode plate disposed under the dielectric plate;a power supply rod configured to apply power to the electrode plate; anda flange having a shape surrounding the power supply rod, the flange being spaced apart from the power supply rod.2. The support unit of claim 1 , wherein the flange is grounded.3. The support unit of claim 2 , wherein the flange is provided to surround part of the power supply rod and is moved in an up-down direction by a lifting member.4. The support unit of claim 3 , wherein the lifting member includes:a cylinder including a cam shaft movable in a first direction; anda roller shaft configured to make contact with the cam shaft, the roller shaft being movable in a second direction different from the first direction by movement of the cam shaft.5. The support unit of claim 4 , wherein the flange is coupled with the roller shaft.6. The support unit of claim 3 , wherein the lifting member includes:a rack connected with an actuator, the rack being movable in a first direction; anda pinion engaged with the rack, the pinion being movable in a second direction different from the first direction by movement of the rack.7. The support unit of claim 6 , wherein the lifting member further includes a lifting shaft connected to the pinion and extending in the second direction claim 6 , andwherein the flange is connected with the lifting shaft.8. The support unit of claim 6 , wherein the rack has a shape upwardly inclined with ...

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Номер записи: 15
04-01-2018 дата публикации

SYSTEM AND METHOD FOR SUBSTRATE SUPPORT FEED-FORWARD TEMPERATURE CONTROL BASED ON RF POWER

Номер: US20180005857A1
Автор: PAPE Eric A., Tian Siyuan, Zaninovich Jorge Jose, Zhang Tao
Принадлежит:

A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal. 1. A temperature controller for a substrate support in a substrate processing system , the temperature controller comprising:a first interface configured to receive a bias power signal and a plasma signal, wherein the bias power signal indicates a bias radio frequency (RF) power level of a first RF generator for the substrate support, and wherein the plasma signal indicates a plasma RF power level of a second RF generator;a second interface configured to receive a temperature signal, wherein the temperature signal indicates a temperature of the substrate support;a compensation controller configured to generate (i) a first compensation value based on a bias feed-forward transfer function and the bias RF power level, and (ii) a second compensation value based on a plasma feed-forward transfer function and the plasma RF power level;a first summer configured to generate an error signal based on a set point temperature and the temperature of the substrate support;a second controller configured to generate a control signal based on the ...

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Номер записи: 16
02-01-2020 дата публикации

DRY ETCHING DEVICE AND ELECTRODE THEREOF

Номер: US20200006040A1
Автор: WEN Chun-Bin
Принадлежит:

A dry etching device and an electrode thereof are disclosed in this application. The electrode of a dry etching device includes: an electrode plate, a surface of the electrode plate including a component-disposing area and an edge area surrounding the component-disposing area; a barrier ring, disposed in the edge area, and located on a periphery of the component-disposing area; and spacers, disposed on an outer side of the electrode plate, and abutting a periphery of the barrier ring, where the spacer has a plurality of through holes. 1. An electrode of a dry etching device , comprising:an electrode plate, a surface of the electrode plate comprising a component-disposing area and an edge area surrounding the component-disposing area;a barrier ring, disposed in the edge area, and located on a periphery of the component-disposing area; andspacers, disposed on an outer side of the electrode plate, and abutting a periphery of the barrier ring, wherein the spacer has a plurality of through holes.2. The electrode of a dry etching device according to claim 1 , wherein the spacers are disposed on the periphery of the barrier ring in a manner of equal intervals claim 1 , unequal intervals claim 1 , partially equal intervals or no interval.3. The electrode of a dry etching device according to claim 1 , wherein the plurality of through holes is evenly claim 1 , unevenly claim 1 , or partially evenly provided on the spacer.4. The electrode of a dry etching device according to claim 1 , wherein the plurality of through holes has a same shape and size.5. The electrode of a dry etching device according to claim 1 , wherein the plurality of through holes has different shapes and sizes.6. The electrode of a dry etching device according to claim 1 , wherein the plurality of through holes has partially same shapes and sizes.7. A dry etching apparatus claim 1 , comprising:a chamber;a base, disposed inside the chamber;a first electrode, disposed on the base, and a surface of the first ...

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Номер записи: 17
20-01-2022 дата публикации

PLASMA GENERATING DEVICE

Номер: US20220020564A1
Автор: CHANG CHIA-CHIANG
Принадлежит: AP PLASMA CORPORATION

A plasma generating device includes a plasma sprinkler head and an outer housing, wherein the plasma sprinkler head includes a case and a plasma generating assembly disposed on the case and having a plasma nozzle. The plasma nozzle is located on a side of the case. The outer housing is disposed on the case and is located around the plasma nozzle. In this way, when the plasma nozzle sprays the plasma, the plasma generating device of the present invention could effectively avoid introducing too much external air to affect a quality of the plasma. 1. A plasma generating device , comprising:a plasma sprinkler head comprising a case and a plasma generating assembly, wherein the plasma generating assembly is disposed on the case and has a plasma nozzle located on a side of the case; andan outer housing disposed on the case and located around the plasma nozzle.2. The plasma generating device as claimed in claim 1 , wherein the outer housing has an open end; at least a part of the plasma nozzle is located between the open end and the case.3. The plasma generating device as claimed in claim 2 , wherein the plasma nozzle has an output port located between the open end and the case.4. The plasma generating device as claimed in claim 2 , wherein the plasma nozzle has an output port protruding out of the open end.5. The plasma generating device as claimed in claim 2 , wherein the outer housing has a surrounding wall surrounding around the plasma nozzle and having the open end; the surrounding wall has at least one vent located between the open end and the case.6. The plasma generating device as claimed in claim 1 , wherein the outer housing is movably disposed on the case.7. The plasma generating device as claimed in claim 6 , further comprising at least one engaging members claim 6 , wherein the case has at least one engaging hole adapted to be engaged with at least one engaging member; the outer housing has at least one displacement adjusting structure having a plurality of ...

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Номер записи: 18
20-01-2022 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20220020569A1
Автор: Hirayama Masaki
Принадлежит:

In an example of an embodiment, a plasma processing apparatus includes a processing container, a stage, an upper electrode, an inlet, and a waveguide device. The stage is provided within the processing container. The upper electrode is provided above the stage, to interpose a space within the processing container. The inlet is configured to introduce high-frequency waves. The high-frequency waves are VHF waves or UHF waves. The inlet is provided at an end of the space in the lateral direction, and extends in a circumferential direction around a central axis of the processing container. The waveguide device is configured to supply high-frequency waves to the inlet. The waveguide device includes a resonator that provides a waveguide. The waveguide of the resonator extends in the circumferential direction around the central axis and extends in the direction in which the central axis extends to be connected to the inlet. 110-. (canceled)11. A plasma processing apparatus comprising:a processing container;a stage provided within the processing container;an upper electrode provided above the stage, to interpose a space within the processing container;an inlet configured to introduce high-frequency waves that are VHF waves or UHF waves, the inlet being provided at an end of the space in a lateral direction and extending in a circumferential direction around a central axis of the processing container; anda waveguide device configured to supply the high-frequency waves to the inlet,wherein the waveguide device includes a resonator that provides a waveguide, andthe waveguide of the resonator extends in the circumferential direction around the central axis and extends in a direction in which the central axis extends to be connected to the inlet.12. The plasma processing apparatus of claim 11 , wherein the waveguide has a tubular shape.13. The plasma processing apparatus of claim 12 , wherein the waveguide includes one end and another end in the direction in which the central ...

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Номер записи: 19
14-01-2021 дата публикации

Control system for plasma chamber having controllable valve

Номер: US20210010137A1
Автор: Chin-Hsiang Lin, Yen-Shuo Su, Ying Xiao
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A control system for a plasma treatment apparatus includes a wafer treatment device. The wafer treatment device includes a vapor chamber and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes. The upper electrode assembly includes an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle. The at least one gas nozzle is separated from the gate distribution plate by a gap. The control system includes a measurement device configured to measure a thickness profile of a wafer. The control system includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal.

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Номер записи: 20
12-01-2017 дата публикации

Plasma processing device

Номер: US20170011890A1
Автор: Kenetsu Yokogawa, Masaru Izawa, Tooru Aramaki
Принадлежит: Hitachi High Technologies Corp

A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

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Номер записи: 21
14-01-2016 дата публикации

PLASMA PROCESSING APPARATUS AND UPPER ELECTRODE ASSEMBLY

Номер: US20160013026A1
Автор: CHUNG Jun Young, MATSUURA Shin
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes supporting members, connecting members and a sliding member. Each of the supporting members is partially disposed in a disc-shaped cooling plate and configured to support an upper electrode in a direction of gravity. Each of the connecting members is partially disposed in the cooling plate and extends in a diametrical direction of the cooling plate to be engaged with the corresponding supporting member. The sliding member is configured to slide the connecting members inward in the diametrical direction of the cooling plate, thereby pushing upward the supporting member and lifting the upper electrode to the cooling plate. 1. A plasma processing apparatus comprising:supporting members each of which is partially disposed in a disc-shaped cooling plate and configured to support an upper electrode in a direction of gravity;connecting members each of which is partially disposed in the cooling plate and extends in a diametrical direction of the cooling plate to be engaged with the corresponding supporting member; anda sliding member configured to slide the connecting members inward in the diametrical direction of the cooling plate, thereby pushing upward the supporting members and lifting the upper electrode to the cooling plate.2. The plasma processing apparatus of claim 1 , wherein the sliding member rotates on an outer periphery of the cooling plate claim 1 , thereby sliding the connecting members.3. The plasma processing apparatus of claim 1 , wherein each of the connecting members has a hook part to be engaged with the corresponding supporting member claim 1 , the hook part having an upper inclined surface.4. The plasma processing apparatus of claim 1 , wherein each of the connecting members has a shaft and a ball cam.5. The plasma processing apparatus of claim 3 , wherein the supporting member has an opening through which the hook part of the connecting member passes.6. The plasma processing apparatus of claim 5 , wherein the ...

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Номер записи: 22
11-01-2018 дата публикации

Plasma Processing Apparatus and Plasma Processing Method

Номер: US20180012768A1
Автор: Akio Ul, Itsuko Sakai, Yosuke Sato
Принадлежит: Toshiba Corp

A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing pat introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.

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Номер записи: 23
14-01-2021 дата публикации

PLASMA PROCESSING APPARATUS AND METHOD FOR RELEASING SAMPLE

Номер: US20210013060A1
Автор: Ishiguro Masaki, Sumiya Masahiro
Принадлежит:

The invention provides a plasma processing apparatus which includes a processing chamber, a radio frequency power source to supply a radio frequency power for plasma generation, a sample stage equipped with an electrostatic chuck electrode of a sample, a DC power source to apply a DC voltage to the electrode, and a control unit to change the DC voltage from a predetermined value to almost 0 V when a predetermined time elapses since the supplying of the radio frequency power is stopped. The predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V. The predetermined time is a time defined on the basis of a time when charged particles generated by the plasma processing disappear or a time when an afterglow discharge disappears. 1. A method for releasing a sample from a sample stage , in which the sample electrostatically adsorbed to the sample stage is subjected to a plasma processing and then released from the sample stage after the plasma processing , comprising:changing a DC voltage applied to an electrode for the electrostatic adsorption from a predetermined value to almost 0 V after a predetermined time elapses since supplying of a radio frequency power to generate plasma is stopped,wherein the predetermined time is a time defined on the basis of a time when charged particles generated by the plasma after the sample is subjected to the plasma processing disappear or a time when an afterglow discharge disappears, andwherein the predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V.2. The method for releasing the sample according to claim 1 ,wherein, in a case where the number of electrodes is two, the DC voltage is applied to each of the electrodes such that an average value of a DC voltage applied to one electrode and a DC voltage applied to the other electrode becomes the predetermined value.3. ...

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Номер записи: 24
03-02-2022 дата публикации

Gas supply unit and substrate processing apparatus including the gas supply unit

Номер: US20220033968A1
Автор: Dae Youn Kim, Hyun Soo JANG, Jeong Ho Lee, Yong Gyu Han, Young Hoon Kim
Принадлежит: ASM IP Holding BV

A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

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Номер записи: 25
21-01-2016 дата публикации

Plasma generation device, method of controlling characteristic of plasma, and substrate processing device using same

Номер: US20160020073A1
Автор: Han Saem Lee, Hee Sun Chae, Hyun Jun Kim, Jeong Hee CHO, Jong Sik LEE
Принадлежит: PSK Inc

Provided are a plasma generation device, a method of controlling a characteristic of plasma, and a substrate processing device using the same. The plasma generation device includes a first radio frequency (RF) power supply supplying a first RF signal; a chamber supplying a space in which plasma is generated; a plasma source installed at the chamber, wherein the plasma source receives the first RF signal and generates plasma; a second RF power supply supplying a second RF signal; a direct current (DC) bias power supply supplying a DC bias signal; and an electrode arranged in the chamber, wherein the electrode receives an overlap signal obtained by overlapping the second RF signal and the DC bias signal and controls a characteristic of the plasma.

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Номер записи: 26
18-01-2018 дата публикации

PLASMA EQUIPMENT FOR TREATING POWDER

Номер: US20180019105A1
Автор: Jeong Hyun Young, Jung Yong Ho, Seok Dong Chan
Принадлежит:

A powder plasma processing apparatus is disclosed. The powder plasma processing apparatus is a powder plasma processing apparatus of a circular surface discharge plasma module, and the apparatus includes a plate-like electrode layer serving as an external surface of the circular surface discharge plasma module, an insulating layer disposed on an internal surface of the plate-like electrode layer, and a plasma generating electrode disposed on the insulating layer, wherein the circular surface discharge plasma module rotates, an alternating voltage is applied to the plasma generating electrode and the plate-like electrode layer to generate plasma around the plasma generating electrode, and a powder for plasma processing is processed by the plasma within the circular surface discharge plasma module. 17-. (canceled)8. A method of processing a powder using a powder surface processing apparatus of a rotary cylindrical surface discharge plasma module: a plate-like electrode layer serving as an external surface of the cylindrical surface discharge plasma module;', 'an insulating layer disposed on an internal surface of the plate-like electrode layer; and', 'a plurality of plasma generating electrodes in the form of a bar which are disposed on the insulating layer at intervals,', 'wherein the cylindrical surface discharge plasma module is configured to rotate and the plate-like electrode layer, insulating layer, and plurality of plasma generating electrodes are configured to rotate with the cylindrical surface discharge plasma module, the cylindrical surface discharge plasma module is configured to apply an alternating voltage to the plurality of plasma generating electrodes and the plate-like electrode layer to generate plasma around the plurality of plasma generating electrodes, and the cylindrical surface discharge plasma module is configured to position a powder on the plasma generating electrodes and treat the surface of the powder by the generated plasma,', 'wherein ...

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Номер записи: 27
18-01-2018 дата публикации

Non-Thermal Soft Plasma Cleaning

Номер: US20180019106A1
Автор: CHAN Chia Sern
Принадлежит:

The present invention provides a Soft Plasma Cleaning (SPC) system () including a Guided Soft-Plasma Cleaning (G-SPC) (). The SPC system is a non-thermal, low temperature process and operable at atmosphere pressure, in both air and liquid medium. In an embodiment, a feedstock gas () is supplied to provide a discharging fluid () in the cleaning chamber (). A plasma guiding and amplifying component () guides and expands the discharging fluid to cover a large ablation area over the workpiece (), thereby also suppressing ion and electron bombardment damage or etching. The plasma guiding and amplifying component () may be formed with dielectric plates or tubes () with each dielectric having an aperture (a). The electric field and ion energy in the cleaning chamber can be additionally controlled via a floating electrode (), so as to suppress plasma damage during SPC. 1. A non-thermal soft plasma cleaning system comprising:a cleaning chamber containing fluid at atmospheric pressure;an electrode disposed in the cleaning chamber, wherein the electrode is connected to a power generator through a power matching unit; anda dielectric member disposed adjacent to the electrode to guide or direct a plasma generated between the electrode and a workpiece to reach the workpiece in a sweeping direction;wherein the workpiece is cleaned by the plasma without causing any plasma damage.2. The non-thermal soft plasma cleaning system according to claim 1 , wherein the dielectric member has an aperture claim 1 , so that the plasma goes through the aperture to reach the workpiece in said sweeping direction.3. The non-thermal soft plasma cleaning system according to claim 1 , wherein the fluid in the cleaning chamber is air or a gas; further comprising a feedstock gas to combine with the plasma into a discharging fluid flow claim 1 , to guide the plasma to the workpiece claim 1 , and to expand a cleaning area claim 1 , so as to with the feedstock gas adding plasma species into the plasma.4. ...

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Номер записи: 28
25-01-2018 дата публикации

Plasma Process and Reactor for the Thermochemical Treatment of the Surface of Metallic Pieces

Номер: US20180023185A1
Автор: BERNARDELLI Euclides Alexandre, BINDER Cristiano, BINDER Roberto, HAMMES Gisele, KLEIN Aloisio Nelmo, LAMIM Thiago De Souza
Принадлежит:

The reactor (R) has a reaction chamber (RC) provided with a support (S) for metallic pieces and with a system of an anode, connected to a ground, and of a cathode system connected to the support (S) and to a pulsating DC power supply. In the reaction chamber (RC), heated and supplied with a gas load, is formed, by means of an electric discharge in the cathode, a gas plasma. A liquid or gas precursor is admitted in at least one tubular cracking chamber associated with a high voltage energy source. It may be provided at least one tubular sputtering chamber associated with an electric power supply receiving a solid precursor. A potential difference is applied between the anode and one and/or other of said tubular chambers, to release the alloy elements to be ionically bombarded against the metallic pieces, either simultaneously or individually and in any order. 1. A process for the thermochemical treatment of the surface of metallic pieces , in a plasma reactor (R) having a reaction chamber (RC) provided with:a support (S) carrying the metallic pieces; a system of anode and cathode having one of its electrodes associated with a pulsating DC power supply;an inlet of ionizable gas load; an inlet of liquid or gas precursor; and an outlet for exhaustion of gas load, characterized in that it comprises the steps of:a) connecting the anode to a first electrode and to a ground and connecting the cathode to the support (S), operating as the other electrode of the system of anode and cathode, and to a negative potential of the pulsating DC power supply;b) statically positioning the metallic pieces on the support (S) associated with the cathode in the interior of the reaction chamber (RC);c) surrounding the support (S) and the metallic pieces with an ionizable gas load supplied to the reaction chamber (RC) through the inlet;d) heating the interior of the reaction chamber (RC) to a working temperature;e) applying to the cathode, associated with the support (S) and with the ...

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Номер записи: 29
26-01-2017 дата публикации

Plasma processing apparatus

Номер: US20170025255A1
Автор: Kenetsu Yokogawa, Takumi Tandou
Принадлежит: Hitachi High Technologies Corp

A sample stage includes a metallic electrode block to which high-frequency power is supplied from a high-frequency power supply, a dielectric heat generation layer which is disposed on a top surface of the electrode block and in which a film-like heater receiving power and generating heat is disposed, a conductor layer which is disposed to cover the heat generation layer, a ring-like conductive layer which is disposed to surround the heat generation layer at an outer circumferential side of the heat generation layer and contacts the conductor layer and the electrode block, and an electrostatic adsorption layer which is disposed to cover the conductor layer and electrostatically adsorbs a sample. The conductor layer and the ring-like conductive layer have dimensions more than a skin depth of a current of the high-frequency power and the electrode block is maintained at a predetermined potential during processing of the sample.

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Номер записи: 30
26-01-2017 дата публикации

Method and Apparatus for Plasma Dicing a Semi-conductor Wafer

Номер: US20170025311A1
Автор: Grivna Gordon M., Johnson Chris, Johnson David, Martinez Linnell, Pays-Volard David, Westerman Russell
Принадлежит: Plasma-Therm LLC

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. 1. A method for plasma dicing a substrate , the method comprising:providing a process chamber having a wall;providing a plasma source adjacent to the wall of the process chamber;providing a work piece support within the process chamber;providing an electrostatic chuck within said work piece support, said electrostatic chuck having a seal band, and at least one clamping electrode;placing a work piece onto said work piece support, said work piece having a support film, a frame and the substrate, wherein the substrate does not overlap said seal band, and wherein the support film overlaps said seal band;generating a plasma using the plasma source; andetching said work piece using the generated plasma while said work piece is electrostatically clamped and while a portion of the support film outside a periphery of the substrate is electrostatically clamped.2. The method according to further comprising said clamping electrode overlapping a portion of the substrate.3. The method according to further comprising said clamping electrode completely overlapping the substrate.4. The method according to further comprising said clamping electrode overlapping a portion of said seal band.5. The method according to further comprising said clamping electrode completely overlapping said seal band.6. The ...

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Номер записи: 31
28-01-2016 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20160027615A1
Автор: IKENAGA Kazuyuki, Ishiguro Masaki, SHIRAYONE Shigeru, Sumiya Masahiro, TAMURA Tomoyuki
Принадлежит:

A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge. 1. A plasma processing apparatus , comprising:a plasma processing chamber in which plasma processing of a sample is carried out by using plasma;a radio frequency power source which supplies a radio frequency power for generating the plasma;a sample stage which is disposed in the plasma processing chamber and on which the sample is mounted;an electrode which is arranged inside the sample stage and electrostatically chucks the sample on the sample stage;a DC power source which applies a DC voltage to the electrode; anda control device which controls the DC power source so that a value calculated as a value of the DC voltage for reducing an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber in a case where the plasma does not exist is applied to the electrode.2. A plasma processing apparatus , comprising:a plasma processing chamber in which plasma processing of a sample is carried out by using plasma;a radio frequency power source which supplies a radio frequency power for generating the plasma;a sample stage which is disposed in the plasma processing chamber and on which the sample is mounted;an electrode which is arranged inside the sample stage and electrostatically chucks the sample on the sample stage;a DC power source ...

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Номер записи: 32
29-01-2015 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20150027635A1
Автор: HANAOKA Hidetoshi
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode. 1. A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma , the plasma processing apparatus comprising:a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode, provided within the processing chamber, configured to serve as a ground with respect to the DC voltage applied to the upper electrode; andan annular shield member provided outside the ground electrode,wherein a groove is formed into a downward recess with a first peripheral portion at an outer peripheral portion of the ground electrode,an upper end of the shield member is positioned above an upper end of the first peripheral portion of the ground electrode, anda protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.2. The plasma processing apparatus of claim 1 ,wherein in a plane view, a front end of ...

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Номер записи: 33
23-01-2020 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20200027688A1
Автор: Kaneko Shota, Kubota Shinji, Okunishi Naohiko, TAMURO Yosuke
Принадлежит:

A substrate processing apparatus includes a chamber, a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon, and a gas supply part to supply a gas into the chamber. A plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region is provided and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas. A plurality of electron energy control parts is correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other. 1. A substrate processing apparatus , comprising:a chamber;a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon;a gas supply part to supply a gas into the chamber;a plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas; anda plurality of electron energy control parts correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other.2. The substrate processing apparatus according to claim 1 , wherein the chamber includes a gas excitation section that contains the gas supply part claim 1 , the gas electron gun arrays and the electron energy control parts claim 1 , and a substrate processing section that contains the pedestal.3. The substrate processing apparatus according to claim 2 , wherein the gas supply part is provided in a side wall of the chamber.4. The substrate processing apparatus according to claim 2 , wherein the gas supply part is provided between the electron gun arrays adjacent to each other.5. The substrate processing apparatus according to claim 1 , wherein the electron ...

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Номер записи: 34
23-01-2020 дата публикации

Apparatuses and methods for avoiding electrical breakdown from rf terminal to adjacent non-rf terminal

Номер: US20200027700A1
Автор: Hyungjoon Kim, Karl Leeser, Sunil Kapoor, Vince Burkhart
Принадлежит: Lam Research Corp

An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.

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Номер записи: 35
01-02-2018 дата публикации

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Номер: US20180033618A1
Автор: Ogawa Jun, Yabe Kazuo
Принадлежит:

A substrate processing apparatus includes: a protrusion portion formed by a side peripheral wall of a processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating a substrate holder and performing a process; a gas discharge portion provided in the vertically elongated space, and configured to discharge a process gas into the processing space; an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; and a shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space. 1. A substrate processing apparatus which performs processing by loading a substrate holder holding a plurality of substrates in a shelf-like manner into a vertical processing container and supplying a process gas , comprising:a protrusion portion formed by a side peripheral wall of the processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating the substrate holder and performing a process;a gas discharge portion provided in the vertically elongated space, and configured to discharge the process gas into the processing space;an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; anda shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space.2. The apparatus of claim ...

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Номер записи: 36
17-02-2022 дата публикации

Plasma processing apparatus and power supply method

Номер: US20220051874A1
Автор: Atsuki KUSUNOKI
Принадлежит: Tokyo Electron Ltd

A plasma processing apparatus includes a process chamber; a mounting stage; first and second electrodes; first and second high frequency power sources;, wherein the first power source supplies a waveform of one of a first pulse wave having high and low levels of first high frequency power or a continuous wave in the first period, supplies a waveform of the other in the second period, and stepwise or continuously changes the low level of the first pulse wave in the transition period, wherein the second power source supplies a waveform of one of a second pulse wave having high and low levels of second high frequency power or a continuous wave in the first period, supplies a waveform of the other in the second period, and stepwise or continuously changes the low level of the second pulse wave in the transition period.

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Номер записи: 37
30-01-2020 дата публикации

Cooling structure and parallel plate etching apparatus

Номер: US20200035464A1
Автор: Keita KAMBARA, Ryo Sasaki
Принадлежит: Tokyo Electron Ltd

A cooling structure includes a cooling target member; a cooling plate including a cooling mechanism, the cooling plate being configured to cool the cooling target member; and a clamp configured to hold the cooling plate. The cooling plate includes a spherical portion having a spherical surface facing the cooling target member and having a center portion that bulges toward the cooling target member with respect to a peripheral edge portion, and a flat portion provided outside the spherical portion so that the spherical portion is thicker than the flat portion. The clamp is configured to apply at least a predetermined pressure only to the spherical portion through a surface of the cooling target member facing the cooling plate.

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Номер записи: 38
11-02-2016 дата публикации

System for Coordinating Pressure Pulses and RF Modulation in a Small Volume Confined Process Reactor

Номер: US20160042921A1
Автор: Dhindsa Rajinder, Singh Harmeet
Принадлежит:

A plasma processing system for processing semiconductor substrates is provided. The plasma processing system includes a plasma processing volume having a volume less than the processing chamber. The plasma processing volume is defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate. The conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process. 1. A plasma processing system comprising:a processing chamber;at least one gas source coupled to the processing chamber;a controller coupled to the processing chamber and the at least one gas source; a top electrode disposed within a top portion of the processing chamber;', 'a substrate support disposed opposite from the top electrode;', a surface of the top electrode;', 'a supporting surface of a substrate support opposing the surface of the top electrode; and', 'an outer perimeter defined by a plasma confinement structure,, 'a plasma processing volume having a volume less than a volume of the processing chamber, the plasma processing volume being defined by, 'the plasma confinement structure including at least one outlet port;', 'at least one RF source coupled to at least one of the substrate support or the top electrode; and', 'a conductance control structure movably disposed proximate to the at least one outlet port, wherein the conductance control structure restricts an outlet flow through the at least one outlet port when disposed in a first position to a first flow rate and wherein the conductance control ...

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Номер записи: 39
08-02-2018 дата публикации

PLASMA PROCESSING APPARATUS AND METHOD FOR RELEASING SAMPLE

Номер: US20180040491A1
Автор: Ishiguro Masaki, Sumiya Masahiro
Принадлежит:

The invention provides a plasma processing apparatus which includes a processing chamber, a radio frequency power source to supply a radio frequency power for plasma generation, a sample stage equipped with an electrostatic chuck electrode of a sample, a DC power source to apply a DC voltage to the electrode, and a control unit to change the DC voltage from a predetermined value to almost 0 V when a predetermined time elapses since the supplying of the radio frequency power is stopped. The predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V. The predetermined time is a time defined on the basis of a time when charged particles generated by the plasma processing disappear or a time when an afterglow discharge disappears. 1. A plasma processing apparatus , comprising:a processing chamber in which a sample is subjected to a plasma processing;a radio frequency power source that supplies a radio frequency power to generate plasma;a sample stage that includes an electrode to electrostatically adsorb the sample and is used to place the sample;a DC power source that applies a DC voltage to the electrode; anda control unit that changes the DC voltage from a predetermined value to almost 0 V when a predetermined time elapses since the supplying of the radio frequency power is stopped after the sample is subjected to the plasma processing,wherein the predetermined time is a time defined on the basis of a time when charged particles generated by the plasma after the sample is subjected to the plasma processing disappear or a time when an afterglow discharge disappears, andwherein the predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V.2. The plasma processing apparatus according to claim 1 ,wherein, in a case where the number of electrodes is two, the DC voltage is applied to each of the electrodes such ...

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Номер записи: 40
06-02-2020 дата публикации

SUBSTRATE PROCESSING APPARATUSES AND SUBSTRATE PROCESSING METHODS

Номер: US20200043719A1
Автор: Mori Yukihiro
Принадлежит: ASM IP HOLDING B.V.

Examples of a substrate processing apparatus include a stage, a driving unit for rotating the stage, an electrode facing only a part of an outer edge of the stage, a high-frequency power supply unit for supplying high-frequency power to the electrode, and a gas supply device for supplying gas to a gap between the electrode and the stage. 1. A substrate processing apparatus comprising:a stage;a driving unit for rotating the stage;an electrode facing only a part of an outer edge of the stage;a high-frequency power supply unit for supplying high-frequency power to the electrode;a gas supply device for supplying gas from above or below the stage without penetrating the electrode to a gap between the electrode and the stage; andan impedance adjusting electrode that faces the electrode and is grounded via a variable capacitor.2. The substrate processing apparatus according to claim 1 , further comprising:a mask block provided above the stage so as to be apart from the stage; anda purge gas supply device for supplying purge gas to a space between the stage and the mask block to generate a gas flow traveling radially relative to the stage.3. The substrate processing apparatus according to claim 1 , wherein the shape of the electrode is an arc-shape.4. (canceled)5. The substrate processing apparatus according to claim 1 , wherein the impedance adjusting electrode is provided above the stage.6. The substrate processing apparatus according to claim 1 , further comprising a measuring device provided above the stage.7. The substrate processing apparatus according to claim 6 , wherein the measuring device is a camera claim 6 , a thermometer or a film thickness measuring device.8. A substrate processing method comprising:placing, on a stage, a substrate having a larger diameter than the stage;rotating the stage while plasma is generated in a gap between an electrode facing only a part of an outer edge of the stage and the stage by supplying high-frequency power to the electrode ...

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Номер записи: 41
16-02-2017 дата публикации

Plasma Processing Apparatus

Номер: US20170047200A1
Автор: Baek Kye-hyun, Hong Jong-Seo, Kim Jin-Pyoung, Lee Hyung-Joo, TOMOYASU Masayuki
Принадлежит:

A plasma processing apparatus includes a chamber defining a process space, an upper electrode mounted in the chamber, the upper electrode including a first gas spray port located in a central region of the upper electrode and a second gas spray port located in a peripheral region of the upper electrode, a lower electrode located opposite the upper electrode across the process space, a first gas supply unit configured to supply a first process gas into the process space via the first gas spray port and the second gas spray port, a second gas supply unit configured to supply a second process gas into the process space via the second gas spray port, a sensor configured to sense a state of plasma in an edge portion of the process space, and a controller configured to control the second gas supply unit in response to an output signal of the sensor. 1. A plasma processing apparatus comprising:a chamber defining a process space in which plasma is processed;an upper electrode mounted in the chamber, the upper electrode including a first gas spray port located in a central region of the upper electrode and a second gas spray port located in a peripheral region of the upper electrode;a lower electrode located opposite the upper electrode across the process space;a first gas supply unit configured to supply a first process gas to the process space via the first gas spray port and the second gas spray port;a second gas supply unit configured to supply a second process gas to the process space via the second gas spray port;a sensor configured to sense a state of plasma in an edge portion of the process space; anda controller configured to control the second gas supply unit in response to an output signal of the sensor.2. The apparatus of claim 1 , further comprising a splitter configured to distribute the first process gas supplied by the first gas supply unit among the first gas spray port and the second gas spray port.3. The apparatus of claim 1 , wherein the sensor comprises ...

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Номер записи: 42
16-02-2017 дата публикации

Cover Plate, Plasma Treatment System Including the Same and Plasma Treatment Method of the Plasma Treatment System

Номер: US20170047235A1
Автор: Kim Hakyoung, SUN Jongwoo
Принадлежит:

A cover plate, a plasma treatment system, and a plasma treatment method therewith are disclosed. The plasma treatment system may include a window, an antenna electrode disposed on the window, and a cover plate disposed between the antenna electrode and the window to cover top and side surfaces of the window. 1. A plasma treatment system , comprising:a window;an antenna electrode disposed on the window; anda cover plate disposed between the antenna electrode and the window, the cover plate extending to a side surface of the window to cover a top surface and at least a portion of the side surface of the window.2. The plasma treatment system of claim 1 , wherein the window comprises a ceramic material claim 1 , andthe cover plate comprises a plastic material having thermal conductivity lower than that of the ceramic material.3. The plasma treatment system of claim 2 , wherein the cover plate comprises a plastic material with a thermal conductivity of about 0.8 W/mK or lower.4. The plasma treatment system of claim 2 , wherein the cover plate comprises polyether ether ketone.5. The plasma treatment system of claim 1 , wherein the cover plate comprises:a disk portion disposed on the window to have an opening partially exposing the window; anda lower edge end portion connected to an edge of a bottom surface of the disk portion to enclose at least a portion of the side surface of the window.6. The plasma treatment system of claim 5 , wherein the opening comprises:a circular hole provided at a center region of the disk portion; anda linear hole extending from the circular hole to an outer peripheral surface of the disk portion.7. The plasma treatment system of claim 6 , wherein the cover plate further comprises an upper edge end portion connected to an edge of a top surface of the disk portion to enclose the antenna electrode claim 6 , andthe upper edge end portion comprises a first upper bridge disposed on the linear hole.8. The plasma treatment system of claim 6 , wherein ...

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Номер записи: 43
18-02-2021 дата публикации

PLACING TABLE AND PLASMA PROCESSING APPARATUS

Номер: US20210051772A1
Автор: KITAGAWA Dai
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a placing table configured to place a workpiece thereon. The placing table includes: an electrostatic chuck configured to attract the workpiece; a support member configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region. The support member includes: an intermediate layer formed of a ceramic sintered compact and supported on the second region via an adhesive; a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; and a heater electrode provided within the thermally sprayed ceramic layer. The heater electrode is formed by the thermal spraying method. 1. A placing table configured to place a workpiece thereon , the placing table comprising:an electrostatic chuck configured to attract the workpiece;a support member configured to support a focus ring; anda metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region,wherein the support member includes:an intermediate layer formed of a ceramic sintered compact and supported on the second region via an adhesive;a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; anda heater electrode provided within the thermally sprayed ceramic layer, the heater electrode being formed by the thermal spraying method.2. The placing table according to claim 1 , wherein the first region and the second region are divided by a groove that extends in an annular shape between the first region and the second region.3. The placing table according to claim 1 , wherein a power feeding contact electrically connected to the heater electrode is provided in the intermediate layer claim 1 , and the power feeding contact is formed of a conductive ceramic material.4. ...

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Номер записи: 44
03-03-2022 дата публикации

VACUUM PROCESSING APPARATUS

Номер: US20220064799A1
Автор: ABE Yoichi, ETO Kenji, JIMBO Yosuke, MIYAYA Takehisa, Yamamoto Yoshiaki
Принадлежит:

A vacuum processing apparatus of the present is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered, and a space surrounded by the shower plate, the electrode flange, and the electrode frame is sealable. The electrode frame includes a frame-shaped upper plate surface portion, a vertical plate surface portion, and a lower plate surface portion. 1. A vacuum processing apparatus which performs plasma processing , the vacuum processing apparatus comprising:an electrode flange connected to a high-frequency power supply;a shower plate spaced apart from and facing the electrode flange and serving as a cathode together with the electrode flange;an insulating shield provided around the shower plate;a processing chamber in which a processing-target substrate is to be disposed in an opposite side of the shower plate opposite with respect to the electrode flange;an electrode frame attached to the shower plate side of the electrode flange; anda slide plate attached to a circumferential edge portion of the shower plate on the electrode frame side, whereinthe shower plate is formed to have a substantially rectangular outline,the electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered, and a space surrounded by the shower plate, the electrode flange, and the electrode frame is sealable, andthe electrode frame comprises:a frame-shaped upper plate surface portion attached to the electrode flange;a vertical plate surface portion provided to stand toward the shower plate from an entire outer circumference ...

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Номер записи: 45
25-02-2016 дата публикации

PLASMA UNIFORMITY CONTROL BY ARRAYS OF UNIT CELL PLASMAS

Номер: US20160053376A1
Автор: Cho Tae Seung, Godet Ludovic, Nam Sang Ki, Nemani Srinivas D.
Принадлежит:

The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells. 1. A process kit , comprising:a plate configured to be disposed in a plasma processing chamber;a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate; andan array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells.2. The process kit of claim 1 , wherein the plate is a showerhead assembly.3. The process kit of claim 1 , wherein the plate is a plasma profile control plate.4. The process kit of claim wherein the electrode assembly further includes a first electrode and a second electrode disposed parallel with the first electrode.5. The process kit of claim 4 , further comprising:a cavity defined between the first electrode and the second electrode, the cavity in fluid communication with at least one of the apertures.6. The process kit of claim 1 , wherein the power applied to each of the unit cell is individually controllable relative to the other unit cells.7. The process kit of claim 1 , further comprising:a showerhead assembly disposed adjacent the plate.8. The process kid of claim 7 , wherein the showerhead assembly comprises a plurality ...

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Номер записи: 46
03-03-2022 дата публикации

SAMPLE PREPARATION SYSTEM AND METHOD FOR ELECTRON MICROSCOPE OBSERVATION, PLASMA TREATMENT APPARATUS, SPUTTERING APPARATUS, AND TAPE FEEDING MECHANISM USED FOR SAMPLE PREPARATION

Номер: US20220068598A1
Автор: Goto Shuichi, Okano Hideyuki, SHIBATA Shinsuke, SHINDO Tomoko
Принадлежит:

Sample preparation system and method which enable electron microscope observation of a sample slice with simple structure and process are provided. The sample preparation system includes at least one of a plasma treatment apparatus and a sputtering apparatus, as well as a slice collecting apparatus. The plasma treatment apparatus is configured to feed a resin tape in a plasma irradiation area to irradiate the resin tape with plasma, thereby continuously hydrophilizing the resin tape. The sputtering apparatus is configured to feed the resin tape in a sputtering area to continuously perform sputtering on the resin tape, thereby imparting conductivity to the resin tape. The slice collecting apparatus is configured to serially collect slices cut out from a sample onto the resin tape having been subjected to plasma treatment or sputtering.

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Номер записи: 47
03-03-2022 дата публикации

FASTENING AUTOMATION APPARATUS FOR UPPER ELECTRODE

Номер: US20220068609A1
Автор: Jung Sungwook, Kim Joohee, KIM Jungwook, Kim Sungjin, Kim Sunho, LEE Hyunjung, Yoo Hosun
Принадлежит:

A fastening automation apparatus for an upper electrode of an etching facility includes a ring, and a plurality of fastening modules movably secured to the ring and configured to be movable in a radial direction on the ring. Each fastening module includes a first frame that is movable in a radial direction on the ring, a driving source installed below the first frame, a driving shaft that transmits a driving force from the driving source, a power transmission unit connected to the driving shaft, and a fastening bit connected to the power transmission unit and configured to be rotated. The plurality of fastening modules are configured to operate simultaneously to install the upper electrode in the etching facility. 1. A fastening apparatus , comprising:a ring; anda plurality of fastening modules movably secured to the ring, each fastening module configured to be movable in a radial direction on the ring,wherein each one of the plurality of fastening modules comprises a first frame that is movable in the radial direction, a driving source installed below the first frame, a driving shaft that is configured to transmit a driving force from the driving source; a power transmission unit connected to the driving shaft, and a fastening bit connected to the power transmission unit and configured to be rotated;wherein the plurality of fastening modules are configured to operate simultaneously to install an upper electrode of an etching facility in the etching facility.2. The fastening apparatus of claim 1 , further comprising a plurality of guide members installed on the ring claim 1 , wherein each guide member is configured to guide movement of a respective one of the plurality of fastening modules.3. The fastening apparatus of claim 2 , wherein each guide member comprises a linear motion (LM) guide.4. The fastening apparatus claim 1 , further comprising a second frame disposed above the ring and in which the power transmission unit is installed.5. The fastening apparatus of ...

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Номер записи: 48
03-03-2022 дата публикации

Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate

Номер: US20220068610A1
Автор: Adrian Herde, Edmund SCHÜNGEL, Silvio Gees
Принадлежит: EVATEC AG

In a vacuum treatment recipient, a plasma is generated between a first plasma electrode and a second plasma electrode so as to perform a vacuum plasma treatment of a substrate. To minimize at least one of the two plasma electrodes to be buried by a deposition of material resulting from the treatment process, that electrode is provided with a surface pattern of areas which do not contribute to the plasma electrode effect and of areas which are plasma electrode effective. The current path between the two electrodes is concentrated on the distinct areas which are plasma electrode effective, leading to an ongoing sputter- cleaning of these areas.

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Номер записи: 49
25-02-2016 дата публикации

Electric pressure systems for control of plasma properties and uniformity

Номер: US20160056018A1
Автор: Jianping Zhao, Lee Chen, Merritt Funk, Zhiying Chen
Принадлежит: Tokyo Electron Ltd

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

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Номер записи: 50
25-02-2016 дата публикации

Methods for Processing Substrates Using a Movable Plasma Confinement Structure

Номер: US20160056022A1
Автор: Eric Hudson
Принадлежит: Lam Research Corp

A method of processing a substrate is provided. The method includes loading a substrate in a processing chamber. The substrate is supported on a bottom electrode and the processing chamber includes a top electrode opposing the bottom electrode. The method includes placing a plasma containment structure over a selected portion of the surface of the substrate to define a plasma containment region of the selected portion of the surface of the substrate. Then, injecting at least one process gas into the plasma containment region and biasing the top electrode and the bottom electrode. The method further includes exhausting process byproducts from the plasma containment region and moving the plasma containment region relative to the substrate to selectively passes over the entire surface of the substrate.

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Номер записи: 51
14-02-2019 дата публикации

Plasma processing method and plasma processing apparatus

Номер: US20190051500A1
Автор: Masayuki Sawataishi, Takanori Eto
Принадлежит: Tokyo Electron Ltd

Both a conductive layer selectivity and a mask selectivity can be achieved. A plasma processing method includes supplying a processing gas containing at least a fluorocarbon-based gas or a hydrofluorocarbon-based gas and CO into a processing vessel in which a multilayered film having at least an oxide layer, a conductive layer provided under the oxide layer and a mask layer provided on a top surface of the oxide layer is disposed; and etching the multilayered film by generating plasma within the processing vessel into which the processing gas is supplied.

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Номер записи: 52
14-02-2019 дата публикации

Substrate support with symmetrical feed structure

Номер: US20190051551A1
Автор: Anchel Sheyner, Andrew Nguyen, Douglas A. Buchberger, Jr., Xiaoping Zhou, Xing Lin
Принадлежит: Applied Materials Inc

Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

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Номер записи: 53
22-02-2018 дата публикации

Low Electron Temperature Etch Chamber with Independent Control Over Plasma Density, Radical Composition Ion Energy for Atomic Precision Etching

Номер: US20180053631A1
Автор: Carducci James D., Collins Kenneth S., Dorf Leonid, Ramaswamy Kartik, Rauf Shahid, Regelman Olga, TAVASSOLI Hamid, ZHANG YING
Принадлежит:

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam. 18-. (canceled)9. A plasma reactor for processing a workpiece , comprising:an electron beam gun enclosure having a beam outlet opening at one end of said enclosure and enclosing an electron emission electrode at an opposite end of said enclosure, said electron emission electrode having an electron emission surface facing said beam outlet, said beam outlet and said electron emission electrode defining a beam propagation path between them;an RF power source and an RF power conductor coupled between said RF power source and said electron emission electrode; anda processing chamber having a beam entry port aligned with said beam outlet, a workpiece support in said processing chamber for supporting a workpiece in a plane parallel with said beam propagation path, and a gas distributor coupled to said processing chamber.10. The plasma reactor of wherein said RF power source comprises a first RF power generator and an impedance match coupled between said first RF power generator and said electron emission electrode.11. The plasma reactor of wherein said impedance match comprises a dual frequency impedance match claim 10 , said power source further comprising a second RF power generator having a frequency different from a frequency of said first RF power generator.12. The plasma reactor of wherein said first RF power generator produces a low frequency and said second RF power generator produces a high frequency.13. The plasma reactor of further comprising a gas supply having a feed path into said electron beam gun enclosure.14. The plasma reactor of further comprising an ion-blocking filter in said beam outlet opening claim 13 , said ion-blocking ...

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Номер записи: 54
23-02-2017 дата публикации

EDGE RING ASSEMBLY FOR IMPROVING FEATURE PROFILE TILTING AT EXTREME EDGE OF WAFER

Номер: US20170053820A1
Автор: Bosch William Frederick, Chung Patrick, Dorai Rajesh, Pandhumsoporn Tamarak, Richardson Brett C., Vetter James C.
Принадлежит:

An edge ring assembly is provided, including: an upper edge ring configured to surround an electrostatic chuck (ESC), the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface, the upper edge ring being disposed above the annular shelf; a lower inner edge ring disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower inner edge ring being defined from an electrically conductive material, the lower inner edge ring being electrically insulated from the ESC; a lower outer edge ring surrounding the inner edge ring, the lower outer edge ring being disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower outer edge ring being defined from an electrically insulating material. 1. An edge ring assembly for a plasma processing chamber , comprising:an upper edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to an RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface, the upper edge ring being disposed above the annular shelf, the upper edge ring being defined from an electrically insulating material;a lower inner edge ring disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower inner edge ring being defined from an electrically conductive material, the lower inner edge ring being electrically insulated from the ESC;a lower outer edge ring surrounding the inner edge ring, the lower outer edge ring being disposed below the upper edge ring in the annular step and disposed over the annular shelf, the lower outer edge ring being defined from an electrically insulating material.2. The edge ring assembly of claim 1 , wherein a ...

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Номер записи: 55
05-03-2015 дата публикации

System, Method and Apparatus for Coordinating Pressure Pulses and RF Modulation in a Small Volume Confined Process Reactor

Номер: US20150060404A1
Автор: Harmeet Singh, Rajinder Dhindsa
Принадлежит: Lam Research Corp

A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate, wherein the conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process.

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Номер записи: 56
10-03-2022 дата публикации

Apparatus and method for processing substrate using plasma

Номер: US20220076925A1
Автор: Dong Hun Kim, Dong Sub Oh, Du Ri Kim, Ji Hwan Lee, Joun Yaek Koo, Myoung Sub Noh, Seong Gil Lee, Wan Jae Park, Young Je UM
Принадлежит: Semes Co Ltd

A substrate processing apparatus and a substrate processing method using plasma capable of controlling an etch rate and/or uniformity according to a position of a substrate are provided. The substrate processing apparatus includes a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with the effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with the effluent of the plasma in the processing space.

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Номер записи: 57
03-03-2016 дата публикации

Ion beam etch without need for wafer tilt or rotation

Номер: US20160064232A1
Автор: Ivan L. Berry, III, Thorsten Lill
Принадлежит: Lam Research Corp

Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof.

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Номер записи: 58
03-03-2016 дата публикации

Ion injector and lens system for ion beam milling

Номер: US20160064260A1
Автор: Ivan L. Berry, III, Thorsten Lill
Принадлежит: Lam Research Corp

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.

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Номер записи: 59
20-02-2020 дата публикации

SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING ASSESSMENT IN PLASMA PROCESSING EQUIPMENT

Номер: US20200058516A1
Автор: Huang Jiayin, Ingle Nitin K., LUBOMIRSKY DMITRY, Park Soonam, Suarez Edwin C., Zhu Yufei
Принадлежит: Applied Materials, Inc.

In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma. 1. A plasma processing system , comprising two processing units , each of the two processing units comprising: a first planar electrode,', 'a second planar electrode defining apertures providing fluid access to a processing region of the processing unit, and', 'a ring shaped insulator disposed in contact with a periphery of the first electrode, and in contact with a periphery of the second electrode; and, 'a plasma generation region bounded bya power supply configured to supply electrical power across the first and second planar electrodes to ignite a plasma of source gases in the plasma generation region, to produce the plasma products;wherein:one of the first electrode, the second electrode or the insulator defines a port providing access for an optical signal from the plasma, the port being configured to limit interactions on the optical signal by the plasma products after passing through the second electrode.2. The plasma processing system of claim 1 , each of the two processing units further comprising:a planar diffuser between the second planar ...

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Номер записи: 60
02-03-2017 дата публикации

PLASMA ETCHING SYSTEMS AND METHODS WITH SECONDARY PLASMA INJECTION

Номер: US20170062184A1
Автор: LUBOMIRSKY DMITRY, Park Soonam, Tran Toan Q., Weng Zilu
Принадлежит: Applied Materials, Inc.

An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device. 1. An apparatus for plasma processing , comprising:a first plasma source that produces first plasma products;a first planar electrode comprising a first plate that defines a plurality of first apertures therethrough, a first side of the first planar electrode being disposed relative to the first plasma source such that the first plasma products pass away from the first plasma source through the plurality of first apertures to a second side of the first planar electrode;a gas distribution device comprising a second plate that defines a plurality of second apertures therethrough, a first side of the gas distribution device being disposed facing the second side of the first planar electrode, such that the first plasma products continue through the plurality of second apertures to a second side of the gas distribution device,a plasma blocking screen comprising a third plate that defines a plurality of fourth apertures therethrough, a first side of the plasma blocking screen being disposed facing the second side of the gas distribution device such that the first plasma ...

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Номер записи: 61
02-03-2017 дата публикации

PLASMA GENERATION APPARATUS

Номер: US20170062190A1
Автор: Cho Jung-Hyun, KIM TAE-HWA, LEE Jae-hyun, WON Bok-Yeon, YOON Jun-Ho
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A plasma generation apparatus is provided. The plasma generation apparatus includes a chamber defining a reaction space that can be isolated from an external environment, an upper electrode provided in an upper portion of the chamber, a lower electrode provided in a lower portion of the chamber, a sidewall electrode provided at a sidewall of the chamber, a radio frequency (RF) pulse power supplier configured to supply RF pulse power to at least one selected from the upper electrode and the lower electrode, and a direct current (DC) pulse power supplier configured to supply DC pulse power to the sidewall electrode. 1. A plasma generation apparatus comprising:a chamber defining a reaction space that is isolated from an external environment;an upper electrode provided in an upper portion of the chamber;a lower electrode provided in a lower portion of the chamber;a sidewall electrode provided at a sidewall of the chamber;a radio frequency (RF) pulse power supplier configured to supply RF pulse power to at least one from among the upper electrode and the lower electrode; anda direct current (DC) pulse power supplier configured to supply DC pulse power to the sidewall electrode.2. The plasma generation apparatus of claim 1 , wherein an on-time of the DC pulse power claim 1 , during which the DC pulse power is supplied to the sidewall electrode claim 1 , is substantially equal to an off-time of the RF pulse power claim 1 , during which the RF pulse power is not supplied to the upper electrode and the lower electrode.3. The plasma generation apparatus of claim 1 , wherein a first section of an on-time of the DC pulse power claim 1 , during which the DC pulse power is supplied to the sidewall electrode claim 1 , overlaps with an off-time of the RF pulse power claim 1 , during which the RF pulse power is not supplied to the upper electrode and the lower electrode claim 1 , and a second section of the on-time of the DC pulse power other than the first section overlaps with a ...

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Номер записи: 62
04-03-2021 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20210066052A1
Автор: EMURA Kazuya
Принадлежит: Kioxia Corporation

According to one embodiment, a plasma processing apparatus includes a processing container processing a substrate, a power supply supplying an electric power into the processing container to generate plasma, an upper electrode arranged inside the processing container, a substrate mounting table including a lower electrode opposed to the upper electrode, and placing the substrate thereon, an edge ring arranged at an outer peripheral portion of the substrate mounting table to surround an periphery of the substrate, and a drive mechanism driving at least part of the edge ring up and down. The edge ring includes a lower ring mounted on the outer peripheral portion of the substrate mounting table, an upper ring mounted on the lower ring to be movable up and down by the drive mechanism, and an auxiliary ring arranged at a lower surface of the upper ring to be movable up and down together with the upper ring, and including a surface facing a side to be opened to an inside of the processing container. 1. A plasma processing apparatus comprising:a processing container processing a substrate;a power supply supplying an electric power into the processing container to generate plasma;an upper electrode arranged inside the processing container;a substrate mounting table including a lower electrode opposed to the upper electrode, and placing the substrate thereon;an edge ring arranged at an outer peripheral portion of the substrate mounting table to surround an periphery of the substrate; anda drive mechanism driving at least part of the edge ring up and down,wherein the edge ring includesa lower ring mounted on the outer peripheral portion of the substrate mounting table,an upper ring mounted on the lower ring to be movable up and down by the drive mechanism, andan auxiliary ring arranged at a lower surface of the upper ring to be movable up and down together with the upper ring, and including a surface facing a side to be opened to an inside of the processing container.2. The ...

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Номер записи: 63
12-03-2015 дата публикации

Plasma processing apparatus

Номер: US20150068681A1
Автор: Makoto Satake, Tadayoshi Kawaguchi, Tsutomu Tetsuka
Принадлежит: Hitachi High Technologies Corp

A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane.

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Номер записи: 64
28-02-2019 дата публикации

Apparatus and Methods for Fertilizer Production

Номер: US20190062231A1
Автор: Winchell Michael E.
Принадлежит: Bio-Flex Labs, LLC

Systems and apparatuses for converting nitrogen gas, such as from ambient air, into fertilizer via interaction with a controlled plasma field using low energy inputs. Mechanisms and methods for cooling splitter apparatuses during production of fertilizer from nitrogen gas. Methods of producing fertilizer from nitrogen gas, such as ambient air, via a splitter creating a plasma output, and for collecting produced fertilizer. 1. A system for producing fertilizer comprising:a first electrode splitter configured to create a plasma output via electricity, the plasma output configured to split nitrogen,a gas input configured to deliver nitrogen to the plasma output,a collection vessel containing water, the collection vessel positioned to collect split nitrogen for recombination of split nitrogen into an aqueous nitric acid solution, anda cooling arrangement for preventing the first electrode from overheating.2. The system of claim 1 , wherein the cooling mechanism comprises the water in the collection vessel.3. The system of claim 1 , wherein the cooling arrangement comprises an input drip emitter for selectively introducing a flow of water into the vessel claim 1 , and an outlet for diverting aqueous nitric acid solution out of the collection vessel.4. The system of claim 1 , wherein the system is powered by conventional AC current.5. The system of claim 1 , further comprising a solar panel providing the system with electricity.6. A method of manufacturing fertilizer comprising:providing a splitter configured to split nitrogen gas via a plasma output,powering the splitter via electricity to create the plasma output,cooling the splitter during plasma output to prevent over-heating,providing a supply of gas containing nitrogen to the plasma output to thereby create split nitrogen,collecting the split nitrogen in a vessel containing water,allowing the collected output of split nitrogen to recombine into nitric acid in the water to form an aqueous nitric acid output, ...

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Номер записи: 65
11-03-2021 дата публикации

PLASMA PROCESSING APPARATUS, PROCESSING METHOD, AND UPPER ELECTRODE STRUCTURE

Номер: US20210074520A1
Автор: HANAOKA Hidetoshi, Ishibashi Junji, SASAKI Junichi, SHIHOMMATSU Kota
Принадлежит:

An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction. 1. An apparatus for plasma processing comprising:a chamber;a lower electrode on which a substrate is placed in the chamber;an edge ring disposed around the lower electrode;an upper electrode facing the lower electrode in the chamber;a member disposed around the upper electrode;a gas supply section configured to supply a process gas to a space between the member and the lower electrode; and the member includes an inner member, and an outer member positioned outside the inner member;', 'the outer member is disposed outside the edge ring in a radial direction; and', 'at least part of the outer member is movable in a vertical direction., 'a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas; wherein'}2. The apparatus according to claim 1 , wherein the outer member and the edge ring do not overlap with each other in a plan view.3. The apparatus according to claim 1 , wherein the outer member is electrically insulated from the inner member.4. The apparatus according to claim 1 , wherein the apparatus is configured to move the outer member upward as the edge ring abrades.5. The apparatus according to claim 1 , wherein the inner member ...

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Номер записи: 66
11-03-2021 дата публикации

ELECTROSTATIC CHUCK

Номер: US20210074521A1
Автор: MOMIYAMA Yutaka, Sasaki Hitoshi, SHIGEZUMI Tsukasa, SUZUKI Minoru
Принадлежит:

According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is less than an average electrical resistance of the first portion. 1. An electrostatic chuck , comprising:a ceramic dielectric substrate including a first major surface and a second major surface, the first major surface being configured to have an object placed thereon and clamped by the electrostatic chuck, the second major surface being at a side opposite to the first major surface;a base plate supporting the ceramic dielectric substrate;at least one first electrode layer provided inside the ceramic dielectric substrate and connected to a high frequency power supply from a side of the second major surface; andat least one second electrode layer provided inside the ceramic dielectric substrate and connected to a clamping power supply,the first electrode layer being provided between the first major surface and the second major surface in a Z-axis direction extending from the base plate toward the ceramic dielectric substrate,the second electrode layer being provided between the first electrode layer and the first major surface in the Z-axis direction,the first electrode layer including a first portion and second portion, the first portion being ...

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Номер записи: 67
11-03-2021 дата публикации

PLASMA PROCESSING APPARATUS, ELECTROSTATIC ATTRACTION METHOD, AND ELECTROSTATIC ATTRACTION PROGRAM

Номер: US20210074522A1
Автор: Matsuyama Shoichiro, Sasaki Yasuharu, Tamaru Naoki
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched. 1. A plasma processing apparatus comprising:a processing chamber configured to perform a plasma processing using plasma;a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion;a focus ring disposed on the focus ring placing portion;a first electrode and a second electrode both disposed inside the focus ring placing portion;a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; anda controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.2. The plasma processing apparatus according to claim 1 , wherein the controller is further configured to control the DC power source such that the respective polarities of the first DC voltage and the second DC voltage are switched before a migration of charge between the placing table and the focus ring is generated.3. The plasma processing apparatus according to claim 2 , wherein a switching period of the polarity is ...

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Номер записи: 68
15-03-2018 дата публикации

TUNABLE GROUND PLANES IN PLASMA CHAMBERS

Номер: US20180073142A9
Автор: "MSaad Hichem", AYOUB Mohamad, Bansal Amit, Du Bois Dale R., FODOR Mark A., JANAKIRAMAN Karthik, JUCO Eller Y., Nowak Thomas, Rocha-Alvarez Juan Carlos, Sivaramakrishnan Visweswaren
Принадлежит: Applied Materials, Inc.

An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls. 1. An apparatus for processing a substrate , comprising:a chamber comprising a chamber lid and chamber body that together define a processing volume, wherein the chamber body comprises a sidewall;a base plate coupled to the chamber lid;a showerhead assembly coupled to the base plate, the showerhead assembly comprising a faceplate electrically coupled to a radio frequency power source;a substrate support disposed within the chamber;a pumping channel formed in the sidewall and fluidly coupled to the processing volume by an exhaust port;a first electrode embedded within the substrate support, wherein the first electrode is substantially parallel to the faceplate and the first electrode is electrically coupled to a ground;a second electrode embedded within the sidewall and electrically coupled to a ground, wherein the exhaust port is formed through the second electrode; andan isolator that isolates the second electrode from the sidewall.2. The apparatus of claim 1 , wherein the first electrode is angled.3. The apparatus of claim 2 , wherein the chamber lid is connected to the chamber body by a hinge.4. The apparatus of claim 1 , wherein the substrate support further comprises a heating element.5. The apparatus of claim 1 , wherein the first electrode is non-planar.6. The apparatus of claim 1 , wherein the first electrode is connected to a first biasing circuit and the second electrode is connected to a second biasing circuit.7. The apparatus ...

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Номер записи: 69
15-03-2018 дата публикации

CONTROL SYSTEM FOR PLASMA CHAMBER HAVING CONTROLLABLE VALVE AND METHOD OF USING THE SAME

Номер: US20180073144A1
Автор: Lin Chin-Hsiang, SU Yen-Shuo, Xiao Ying
Принадлежит:

A control system for a plasma treatment apparatus includes a wafer treatment device. The wafer treatment device includes a vapor chamber and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes. The upper electrode assembly includes an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle. The at least one gas nozzle is separated from the gate distribution plate by a gap. The control system includes a measurement device configured to measure a thickness profile of a wafer. The control system includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal. 1. A control system for a plasma treatment apparatus comprising: a vapor chamber; and', a gas distribution plate having a plurality of holes in a bottom surface thereof; and', 'an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle, wherein the at least one gas nozzle is separated from the gate distribution plate by a gap;, 'an upper electrode assembly comprising], 'a wafer treatment device comprisinga measurement device configured to measure a thickness profile of a wafer; anda controller configured to generate a control signal,wherein the at least one controllable valve is configured to be adjusted based on the control signal.2. The control system of claim 1 , wherein the measurement device is configured to transmit the measured thickness profile to the controller.3. The control system of claim 2 , wherein the controller is configured to generate the control signal based on the measured thickness profile.4. The control system of claim ...

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Номер записи: 70
16-03-2017 дата публикации

Method of Charge Controlled Patterning During Reactive ION Etching

Номер: US20170076951A1
Автор: Dirahoui Bachir, Mahajan Sunit S., Wise Richard
Принадлежит:

A plasma processing apparatus for reactive ion etching a wafer includes a wafer chuck within a chamber and an electrode for creating a plasma within the chamber above the wafer chuck. There is provided on the wafer chuck a semiconductor wafer having a p− layer and an n+ layer. Both p− and n+ layers have exposed peripheral edges. Also provided is an anode comprising the plasma, a cathode comprising the wafer chuck, and a gate comprising the peripheral edge of the n+ layer. A coating layer is formed on a portion of the peripheral edge of the n+ layer. The coating layer reduces charge flow to a portion of the semiconductor wafer below the coating layer. 1. A plasma processing apparatus comprising:a wafer chuck within a chamber;an electrode for creating a plasma within the chamber above the wafer chuck;a semiconductor wafer between the wafer chuck and the electrode, the semiconductor wafer having a p− layer and, above the p− layer, a n+ layer, the p− layer and the n+ layer each having a peripheral edge;an anode comprising the plasma;a cathode comprising the wafer chuck;a gate comprising the peripheral edge of the n+ layer; anda coating layer on a portion of the peripheral edge of the n+ layer;wherein the coating layer reduces charge flow to a portion of the semiconductor wafer below the coating layer.2. The apparatus of claim 1 , further comprising a major portion of the n+ layer free of the coating layer.3. The apparatus of claim 1 , wherein the coating layer is an electrical non-conductor.4. The apparatus of claim 3 , wherein the coating layer is a polymer.5. The apparatus of claim 1 , wherein the coating layer is a resist.6. The apparatus of claim 1 , further comprising a bevel between a surface of the n+ layer and the n+ layer peripheral edge claim 1 , and wherein the coating layer extends along the bevel.7. The apparatus of claim 6 , wherein the coating layer extends along a portion of the surface of the n+ layer adjacent to the n+ layer peripheral edge.8. The ...

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Номер записи: 71
24-03-2022 дата публикации

SHOWERHEAD ASSEMBLY WITH RECURSIVE GAS CHANNELS

Номер: US20220093361A1
Автор: Franklin Timothy Joseph, WAKABAYASHI Reyn Tetsuro, WONG Carlaton
Принадлежит:

Embodiments of showerheads are provided herein. In some embodiments, a showerhead assembly includes a chill plate having a plurality of recursive gas paths and one or more cooling channels disposed therein, wherein each of the plurality of recursive gas paths is fluidly coupled to a single gas inlet extending to a first side of the chill plate and a plurality of gas outlets extending to a second side of the chill plate; and a heater plate coupled to the chill plate, wherein the heater plate includes a plurality of first gas distribution holes extending from a top surface thereof to a plurality of plenums disposed within the heater plate, the plurality of first gas distribution holes corresponding with the plurality of gas outlets of the chill plate, and a plurality of second gas distribution holes extending from the plurality of plenums to a lower surface of the heater plate. 1. A showerhead assembly for use in a substrate processing chamber , comprising:a chill plate having a plurality of recursive gas paths disposed therein that are fluidly independent from each other and one or more cooling channels disposed therein, wherein each of the plurality of recursive gas paths is fluidly coupled to a single gas inlet extending to a first side of the chill plate and a plurality of gas outlets extending to a second side of the chill plate; anda heater plate coupled to the chill plate, wherein the heater plate includes one or more heating elements disposed therein, a plurality of first gas distribution holes extending from a top surface thereof to a plurality of plenums that are fluidly independent disposed within the heater plate, the plurality of first gas distribution holes corresponding with the plurality of gas outlets of the chill plate, and a plurality of second gas distribution holes extending from the plurality of plenums to a lower surface of the heater plate.2. The showerhead assembly of claim 1 , further comprising an upper electrode coupled to the heater plate ...

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Номер записи: 72
26-03-2015 дата публикации

PLASMA PROCESSOR AND PLASMA PROCESSING METHOD

Номер: US20150083333A1
Автор: GONDAI Tadashi, HIGUCHI Kimihiro, KAYAMORI Satoshi, KIKUCHI Akihiro, OOHASHI Kaoru, SAKAMOTO Yuichiro, SHIBUYA Munehiro, SHIMA Shinya, UEDA Takehiro
Принадлежит: TOKYO ELECTRON LIMITED

An etching chamber incorporates a focus ring so as to surround a semiconductor wafer W provided on a lower electrode . The plasma processor is provided with an electric potential control DC power supply to control the electric potential of this focus ring , and so constituted that the lower electrode is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring . This constitution prevents surface arcing from developing along the surface of a substrate to be processed. 1. A plasma processing apparatus comprising:a processing chamber configured to accommodate a substrate to be processed and performing a plasma processing thereon;a susceptor installed inside the processing chamber to mount the substrate thereon, the susceptor serving as an electrode;a first path formed inside the susceptor to circulate a coolant therethrough, the first path includinga coolant inlet line,a coolant exhaust line extending vertically to exhaust the coolant, anda coolant circulating line connected to the coolant inlet line and the coolant exhaust line, the coolant inlet line introducing the coolant into the coolant circulating line; anda second path, formed inside the susceptor, includinga gas inlet portion configured to supply a cooling gas from a bottom of the susceptor,a gas storage being connected to the gas inlet portion and being configured to store the cooling gas,fine grooves formed on a mounting surface of the susceptor, andgas supply fine holes to supply the cooling gas from the gas storage to the fine grooves,wherein a temperature of the susceptor is controlled by circulating the coolant through the coolant circulating line and a temperature of the substrate to be processed is controlled by supplying the cooling gas from the gas storage to a backside of the substrate mounted on the susceptor through the gas supply fine holes, and the gas storage is formed under the coolant circulating line, andwherein dimensions of the gas storage are ...

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Номер записи: 73
26-03-2015 дата публикации

STRUCTURAL BODY AND ELECTRODE STRUCTURE

Номер: US20150084508A1
Автор: KONDO Yoshimasa, YOSHIOKA Kunihiko
Принадлежит:

A structural body is provided in fluid, perpendicular to a typical flow direction of the fluid. The structural body includes a cylindrical insulating body having at least one hollow portion and at least one conducting body positioned in the hollow portion of the insulating body. In a cross section of the insulating body having a normal line in an axial direction of the insulating body, the following relationship is satisfied: 3. The structural body according to claim 2 , wherein the insulating body has a plurality of the hollow portions containing a plurality of the conducting bodies claim 2 , respectively; andsame potential is applied to each of the conducting bodies.4. The structural body according to claim 3 , wherein a plurality of the conducting bodies are arranged in the typical flow direction claim 3 , and the Dcx represents a sum of lengths of the conducting bodies arranged in the typical flow direction.5. The structural body according to claim 3 , wherein a plurality of the conducting bodies are arranged in the direction perpendicular to the typical flow direction claim 3 , and the Dcy represents a maximum value of lengths of the conducting bodies arranged in the direction perpendicular to the typical flow direction.7. The structural body according to claim 1 , wherein in the cross section claim 1 , at least one of an upstream end and a downstream end of the insulating body with respect to flow of the fluid has a shape where a length perpendicular to the typical flow direction is decreased gradually toward a front end of the insulating body.8. The structural body according to claim 7 , wherein the at least one of the upstream end and the downstream end includes at least one tapered portion.10. The structural body according to claim 1 , wherein the insulating body has an upstream end and a downstream end with respect to flow of the fluid claim 1 , and at least the upstream end has a shape where a length in a direction perpendicular to the typical flow ...

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Номер записи: 74
18-03-2021 дата публикации

ELECTROSTATIC ATTRACTION METHOD AND PLASMA PROCESSING APPARATUS

Номер: US20210082671A1
Автор: IKEGAMI Masashi
Принадлежит: TOKYO ELECTRON LIMITED

An electrostatic attraction method is provided. In the electrostatic attraction method, voltages are applied to one or more electrodes disposed in a substrate support while reversing the polarities of the voltages for each process cycle for plasma treatment. The one or more electrodes are disposed in the substrate support at at least a position corresponding to a ring member placed on the substrate support to surround a substrate serving as a plasma treatment target placed on the substrate support. 1. An electrostatic attraction method comprising:applying voltages to one or more electrodes disposed in a substrate support while reversing polarities of the voltages for each process cycle for plasma treatment, wherein said one or more electrodes are disposed in the substrate support at at least a position corresponding to a ring member placed on the substrate support to surround a substrate serving as a plasma treatment target placed on the substrate support,wherein said each process cycle is a cycle of performing the plasma treatment on a predetermined number of substrates when the plasma treatment is performed consecutively on substrates while exchanging the substrates, and said each process cycle is a cycle of performing a set of the plasma treatment and post-treatment when the plasma treatment is performed and the post-treatment is subsequently performed on each of the substrates.2. The electrostatic attraction method of claim 1 , wherein said one or more electrodes include two or more electrodes disposed along a radial direction of the ring member.3. The electrostatic attraction method of claim 2 , wherein the polarities of the voltages applied to adjacent electrodes are different from each other.4. The electrostatic attraction method of claim 1 , wherein the post-treatment is dry cleaning performed in a state where no substrate is placed on the substrate support.5. The electrostatic attraction method of claim 4 , wherein the polarities of the voltages applied to ...

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Номер записи: 75
14-03-2019 дата публикации

BOTTOM AND SIDE PLASMA TUNING HAVING CLOSED LOOP CONTROL

Номер: US20190080916A1
Автор: AYOUB Mohamad A., Balasubramanian Ganesh, BANSAL Amit Kumar, Chen Jian J., Rocha-Alvarez Juan Carlos, Sankarakrishnan Ramprakash, ZHOU Jianhua
Принадлежит:

An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support. 1. A method for processing a substrate , comprising:disposing the substrate on a substrate support in a process chamber;forming a plasma in the process chamber; andcontrolling a density profile of the plasma in the process chamber by a process comprising controlling an impedance of a first ground pathway of the process chamber using a first variable impedance circuit.2. The method of claim 1 , wherein the first variable impedance circuit is coupled to a side wall of the process chamber.3. The method of claim 1 , wherein controlling the density profile of the plasma in the process chamber further comprises controlling an impedance of a second ground pathway of the process chamber using a second variable impedance circuit.4. The method of claim 3 , wherein the second variable impedance circuit is coupled to the substrate support.5. The method of claim 3 , wherein the impedance of the first ground pathway of the process chamber is controlled by adjusting a capacitance of the first variable impedance circuit and an impedance of the second ground pathway is controlled by adjusting a capacitance of the second variable impedance circuit.6. The method of claim 1 , wherein the first variable impedance circuit is coupled to an annular side wall electrode disposed between a side wall and a lid assembly of the process chamber.7. The method of claim 1 , wherein a third electrode is coupled to the substrate support ...

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Номер записи: 76
24-03-2016 дата публикации

PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

Номер: US20160086817A1
Автор: KITAGAITO Keiji, KOBAYASHI Fumiya, TOMURA Maju
Принадлежит:

A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step. 1. A plasma etching method for plasma-etching an object including a first film , a second film , a third film , and a patterned first mask , the method comprising:a first step of plasma-etching the first film using the first mask;a second step of etching the second film using the etched first film as a second mask:a third step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etched second film; anda fourth step of etching the silicon-containing film to expose a surface of the third film.2. The plasma etching method as claimed in claim 1 , wherein the silicon-containing gas includes one of silicon tetrachloride and silicon tetrafluoride claim 1 , and a reducing gas.3. The plasma etching method as claimed in claim 1 , whereinthe second film is an amorphous carbon layer film;the first film is an inorganic film formed on an upper side of the amorphous carbon layer film;in the first step, the inorganic film is plasma-etched using the first mask; andin the second step, the amorphous carbon layer film is etched with plasma of a process gas including an oxygen gas and a carbonyl sulfide gas by using etched inorganic film as the second mask.4. The plasma etching method as claimed in claim 3 , whereinthe third film is an oxide film formed on a lower side of the amorphous carbon layer film; andthe second step and the third step are repeated to expose the oxide film.5. The plasma etching method as claimed in claim 4 , further comprising:a fifth step of plasma-etching the oxide film using a third mask including the ...

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Номер записи: 77
02-04-2015 дата публикации

Novel electrodes for etch

Номер: US20150090401A1
Автор: AJAY Kumar, Amitabh Sabharwal, Banqiu Wu, Saravjeet Singh
Принадлежит: Individual

An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.

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Номер записи: 78
02-04-2015 дата публикации

Control of Impedance of RF Delivery Path

Номер: US20150091441A1
Автор: Alexei Marakhtanov, Ken Lucchesi, Luc Albarede, Rajinder Dhindsa
Принадлежит: Lam Research Corp

A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

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Номер записи: 79
31-03-2022 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20220102114A1
Автор: MATSUI Shun, Ohashi Naofumi
Принадлежит: KOKUSAI ELECTRIC CORPORATION

Described herein is a technique capable of uniformizing a quality of a film even when a processing environment changes. According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate into a process chamber; (b) supplying a gas to the substrate in the process chamber through a dispersion plate of a shower head while heating the dispersion plate by a shower head heater and exhausting the gas; (c) unloading the substrate; (d) measuring a temperature of the shower head before loading a subsequent substrate; and (e) comparing the temperature of the shower head after (d) with a pre-set temperature, and operating the shower head heater to control the temperature of the shower head to become close to the pre-set temperature when a difference between the temperature of the shower head and the pre-set temperature is greater than a predetermined value. 1. A method of manufacturing a semiconductor device , comprising:(a) loading a substrate into a process chamber;(b) supplying a gas to the substrate in the process chamber through a dispersion plate of a shower head provided upstream of the process chamber while heating the dispersion plate by a shower head heater and exhausting the gas from the process chamber;(c) unloading the substrate out of the process chamber;(d) measuring a temperature of the shower head before loading a subsequent substrate to be processed into the process chamber; and(e) comparing the temperature of the shower head after (d) with a pre-set temperature, and operating the shower head heater so as to control the temperature of the shower head to become close to the pre-set temperature when a difference between the temperature of the shower head and the pre-set temperature is greater than a predetermined value.2. The method of claim 1 , wherein the shower head heater heats the dispersion plate such that a temperature of an edge of the dispersion plate in (b) is higher than a ...

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Номер записи: 80
12-03-2020 дата публикации

Portable plasma device

Номер: US20200083023A1
Автор: Moo Hwan Kim, Yeon Sook Chang
Принадлежит: FEMTO SCIENCE INC

The present disclosure relates to a portable plasma device which is convenient to carry and has excellent performance and is capable of simply, uniformly, and locally treating an inner surface of a microstructure such as a microwell plate by easily adjusting a plasma flame.

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Номер записи: 81
12-03-2020 дата публикации

MULTI-LAYER PROTECTIVE COATING

Номер: US20200083024A1
Автор: Zong Jian
Принадлежит:

Methods and apparatus for preparing a protective coating are described. In one example aspect, an apparatus for preparing a protective coating includes a chamber, a substrate positioned within the chamber configured to hold at least a target object, an inlet pipe configured to direct a monomer vapor into the chamber, and one or more electrodes configured to perform a chemical vapor deposition process to produce a multi-layer coating. The chemical vapor deposition process comprises multiple cycles, each cycle comprising a pretreatment phase and a coating phase to produce a layer of the multi-layer coating. 1. An apparatus for preparing a protective coating , comprising:a chamber;a substrate positioned within the chamber configured to hold at least a target object;an inlet pipe configured to direct a monomer vapor into the chamber; andone or more electrodes configured to perform a chemical vapor deposition process to produce a multi-layer coating, wherein the chemical vapor deposition process comprises multiple cycles, each cycle comprising a pretreatment phase and a coating phase to produce a layer of the multi-layer coating, apply, in the pretreatment phase, a first type of a discharge at a first power level for a first time duration, and', 'apply, in the coating phase, a second type of a discharge at a second power level for a second time duration to produce a first layer of coating having a first density, the second power level being lower than the first power level, and, 'wherein the one or more electrodes are configured to, for a first cycle of the multiple cycles,'}wherein the one or more electrodes are further configured to adjust at least one of the second type of the discharge or the second power level in a second cycle of the multiple cycles to produce a second layer having a different density.2. The apparatus of claim 1 , wherein the one or more electrodes are further configured to adjust the second time duration in a third cycle of the multiple cycles to ...

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Номер записи: 82
12-03-2020 дата публикации

SUBSTRATE PROCESSING APPARATUS, PLURALITY OF ELECTRODES AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20200083067A1
Автор: Hara Daisuke, TAKEDA Tsuyoshi
Принадлежит: KOKUSAI ELECTRIC CORPORATION

There is provided a technique, which includes: a reaction tube configured to form a process chamber in which a substrate is processed; an electrode fixing jig installed outside the reaction tube and configured to fix at least two electrodes for forming plasma in the process chamber; and a heating device installed outside the electrode fixing jig and configured to heat the reaction tube, wherein the at least two electrodes include at least one electrode to which a predetermined potential is applied and at least one electrode to which a reference potential is applied, and wherein a surface area of the at least one electrode to which the predetermined potential is applied is two times or more than a surface area of the at least one electrode to which the reference potential is applied. 1. A substrate processing apparatus , comprising:a reaction tube configured to form a process chamber in which a substrate is processed;an electrode fixing jig installed outside the reaction tube and configured to fix at least two electrodes for forming plasma in the process chamber; anda heating device installed outside the electrode fixing jig and configured to heat the reaction tube,wherein the at least two electrodes include at least one electrode to which a predetermined potential is applied and at least one electrode to which a reference potential is applied, andwherein a surface area of the at least one electrode to which the predetermined potential is applied is two times or more than a surface area of the at least one electrode to which the reference potential is applied.2. The apparatus according to claim 1 , wherein the at least two electrodes are made of a nickel alloy material to which aluminum is added.3. The apparatus according to claim 1 , further comprising a spacer configured to separate the at least two electrodes from a surface of the electrode fixing jig by a predetermined distance claim 1 ,wherein the at least two electrodes include a bent portion, and the spacer is ...

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Номер записи: 83
29-03-2018 дата публикации

HEATING DEVICE

Номер: US20180087153A1
Автор: KURANO Jun, TANAKA Kazutaka
Принадлежит:

A heating device includes a holding member having a resistive heating element, a columnar support member joined to the holding member, power receiving electrodes connected to the resistive heating element, and an electrode terminal unit disposed in each of through holes in the columnar support member. Each of the electrode terminal units includes a first columnar member having one end portion connected to the power receiving electrode and the other end portion connected to a metal stranded wire, and a second columnar member having an end portion connected to the metal stranded wire. A columnar member assembly having a portion of the first columnar member and a portion of the second columnar member includes a general portion and a large-diameter portion. The distance between the large-diameter portion and an inner peripheral surface of the through hole is smaller than the distance between the general portion and the inner peripheral surface. 1. A heating device for heating an object , comprising:a holding member having a shape of a plate with first and second surfaces substantially orthogonal to a first direction, the holding member including a resistive heating element thereinside, the object being held on the first surface of the holding member;a columnar support member having a columnar shape extending in the first direction, the columnar support member joined to the second surface of the holding member, the columnar support member including a plurality of inner peripheral surfaces defining a plurality of through holes, each of the plurality of through holes opening at a second surface side of the holding member;a plurality of power receiving electrodes disposed on the second surface side of the holding member and electrically connected to the resistive heating element; anda plurality of electrode terminal units, each of the plurality of electrode terminal units disposed in one of the plurality of through holes and electrically connected to one of the plurality of ...

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Номер записи: 84
25-03-2021 дата публикации

Substrate processing apparatus and method of manufacturing semiconductor device

Номер: US20210090861A1
Автор: Nobuo Ishimaru
Принадлежит: Kokusai Electric Corp

Described herein is a technique capable of reducing a damage to a reaction tube and an electrode when processing a substrate using plasma as well as generating the plasma stably. According to one aspect thereof, there is provided a substrate processing apparatus including: a process chamber; a buffer chamber where a gas is circulated before being supplied to a substrate; a pair of discharge electrodes extending parallel to each other in the buffer chamber; and a pair of sheath tubes configured to cover the pair of the discharge electrodes to prevent them from being exposed to the gas. A metal cap, whose outer diameter is equal to that of the discharge electrode and whose front end is rounded, is provided at one end of one or each of the discharge electrodes other than the other end of the one or each of the discharge electrodes supplied with electric power.

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Номер записи: 85
25-03-2021 дата публикации

DIELECTRIC MEMBER, STRUCTURE, AND SUBSTRATE PROCESSING APPARATUS

Номер: US20210090864A1
Автор: TAIRA Takashi
Принадлежит:

A dielectric member that is attached to a lower surface of a stage is provided. The stage includes a base provided with a base channel through which a heat exchange medium passes. The dielectric member includes at least one first component including a passage that is connected to the base channel, and a second component surrounding the first component. 1. A dielectric member that is attached to a lower surface of a stage , the stage including a base provided with a base channel through which a heat exchange medium flows , the dielectric member comprising:at least one first component including a passage that is connected to the base channel; anda second component surrounding the first component.2. The dielectric member according to claim 1 , wherein the dielectric member is formed of ceramic.3. The dielectric member according to claim 1 , wherein the second component includes at least one opening in which the first component is disposed claim 1 , the opening being provided at a location away from a center of the second component.4. The dielectric member according to claim 1 , wherein the passage in the first component is provided with two passages.5. The dielectric member according to claim 2 , wherein the second component includes at least one opening in which the first component is disposed claim 2 , the opening being provided at a location away from a center of the second component.6. The dielectric member according to claim 5 , wherein the passage in the first component is provided with two passages.7. The dielectric member according to claim 2 , wherein the passage in the first component is provided with two passages.8. The dielectric member according to claim 3 , wherein the passage in the first component is provided with two passages.9. A structure comprising:a stage including a base, the base being provided with a base channel through which a heat exchange medium flows; and at least one first component including a passage that is connected to the base channel ...

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Номер записи: 86
21-03-2019 дата публикации

PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

Номер: US20190088497A1
Автор: KITAGAITO Keiji, KOBAYASHI Fumiya, TOMURA Maju
Принадлежит:

A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step. 1. A plasma etching method for plasma-etching an object including an etching target film and a patterned mask , the plasma etching method comprising:a first step of plasma-etching the etching target film using the mask; anda second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step, whereinas a result of the first step, a thickness of a top part of the side wall that is closer to the mask becomes less than a thickness of a bottom part of the side wall that is farther from the mask; andthe second step is performed such that a thickness of the silicon-containing film deposited on the top part of the side wall becomes greater than a thickness of the silicon-containing film deposited on the bottom part of the side wall.2. The plasma etching method as claimed in claim 1 , wherein the silicon-containing gas includesone of silicon tetrachloride and silicon tetrafluoride, anda reducing gas.3. The plasma etching method as claimed in claim 1 , whereinthe object includes an amorphous carbon layer film and a patterned inorganic film stacked on the amorphous carbon layer film; andthe first step includes etching the amorphous carbon layer film with plasma of a process gas including an oxygen gas and a carbonyl sulfide gas by using the mask including the inorganic film.4. The plasma etching method as claimed in claim 3 , whereinthe object also includes an oxide film formed on an opposite side of the amorphous carbon layer film from the inorganic film; andthe first step ...

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Номер записи: 87
21-03-2019 дата публикации

Substrate support with dual embedded electrodes

Номер: US20190088519A1
Автор: Jaeyong Cho, Philip Allan Kraus
Принадлежит: Applied Materials Inc

Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage to a substrate, and methods of biasing the substrate using the pulsed DC voltage, during plasma assisted or plasma enhanced semiconductor manufacturing processes.

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Номер записи: 88
21-03-2019 дата публикации

SYSTEM FOR COUPLING A VOLTAGE TO SPATIALLY SEGMENTED PORTIONS OF THE WAFER WITH VARIABLE VOLTAGE

Номер: US20190088522A1
Автор: Chua Thai Cheng, KRAUS Philip Allan, LINDLEY Roger Alan
Принадлежит:

The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of direct-current (“DC”) voltage through a switching system to electrodes disposed in the ESC substrate support. In some embodiments, the switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. In some embodiments, during processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved. 1. A substrate support assembly , comprising:a substrate support;a plurality of electrodes extending through the substrate support;a pair of switches, wherein each electrode of the plurality of electrodes is electrically connected to the pair of switches;at least one trim voltage source electrically connected between the pair of switches and at least one of the plurality of electrodes; anda chucking electrode planarly embedded in the substrate support.2. The substrate support assembly of claim 1 , wherein the plurality of electrodes is a plurality of conductive pins.3. The substrate support assembly of claim 1 , wherein an electrode of the plurality of electrodes comprises aluminum claim 1 , an aluminum alloy claim 1 , silicon carbide claim 1 , or combinations thereof.4. The substrate support assembly of claim 1 , wherein each switch of the pair of switches is a fast high-voltage transistor switch.5. The substrate support assembly of claim 1 , wherein at least a portion of the plurality of electrodes is arranged in a circular pattern.6. The substrate support assembly of claim 1 , further comprising a first voltage source ...

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Номер записи: 89
05-05-2022 дата публикации

Apparatuses and methods for avoiding electrical breakdown from rf terminal to adjacent non-rf terminal

Номер: US20220139670A1
Автор: Hyungjoon Kim, Karl Leeser, Sunil Kapoor, Vince Burkhart
Принадлежит: Lam Research Corp

An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.

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Номер записи: 90
05-05-2022 дата публикации

Macroscopic texturing for anodized and coated surfaces

Номер: US20220139677A1
Автор: Adrian Radocea, Gordon Wen-yin PENG, Mansa Rajagopalan, Nicolas Londono, Yu Jiang
Принадлежит: Lam Research Corp

A consumable part for a plasma processing chamber includes a plasma facing side. An engineered surface is formed into the plasma facing side of the consumable part. A plurality of raised features defines the engineered surface, wherein features are arranged in a predefined pattern, wherein each of the plurality of raised features includes a top region having an outer edge and a sidewall. A base surface of the engineered surface is configured to surround each of the plurality of raised features, such that a corresponding sidewall of a corresponding raised feature extends up at an angle from the base surface to a corresponding top region. The consumable part is configured to be installed in the plasma processing chamber. The consumable part is configured to be exposed to a plasma and byproducts of the plasma.

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Номер записи: 91
05-05-2022 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20220139678A1
Автор: IKENAGA Kazuyuki, Ishiguro Masaki, SHIRAYONE Shigeru, Sumiya Masahiro, TAMURA Tomoyuki
Принадлежит:

A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

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Номер записи: 92
30-03-2017 дата публикации

MOUNTING TABLE AND PLASMA PROCESSING APPARATUS

Номер: US20170092472A1
Автор: Koiwa Shingo, Koizumi Katsuyuki, KUDO Yasuhisa
Принадлежит:

A mounting table includes a cooling table, a power feed body, an electrostatic chuck, a first elastic member and a clamping member. The power feed body is connected to the cooling table to transmit a high frequency power. A base of the electrostatic chuck has conductivity. An attraction unit has an attraction electrode and a heater therein, and is fastened to the base by metal bonding. The first elastic member is provided between the cooling table and the base to allow the electrostatic chuck to be spaced apart from the cooling table. The first elastic member forms, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied. The clamping member is contacted with the cooling table and the base, and allows the base and the first elastic member to be interposed between the cooling table and the clamping member. 1. A mounting table , comprising:a cooling table made of a metal and provided with a flow path for a coolant;a power feed body connected to the cooling table, made of aluminum or an aluminum alloy and configured to transmit a high frequency power from a high frequency power supply, an electrostatic chuck comprising a conductive base provided on the cooling table; and an attraction unit made of ceramics, having therein an attraction electrode and a heater, which is provided on the base and fastened to the base by metal bonding;a first elastic member having insulating property, which is provided between the cooling table and the base, and is configured to allow the electrostatic chuck to be spaced apart from the cooling table and configured to form, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied between the cooling table and the base; anda clamping member, made of a metal and in contact with the cooling table and the base, allowing the base and the first elastic member to be interposed between the cooling table and the clamping member.2. The mounting table ...

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Номер записи: 93
30-03-2017 дата публикации

PLASMA PROCESSING METHOD

Номер: US20170092509A1
Автор: HONDA Masanobu, Watanabe Hikaru
Принадлежит:

A plasma etching method includes: mounting a target substrate on a first electrode which is provided to be parallel with a second electrode with a preset gap within a processing chamber, a base material of the second electrode containing silicon or SiC; generating plasma of a fluorocarbon-based etching gas in a processing space; applying a low frequency AC power or a high frequency AC power having a frequency, which an ion in the plasma is allowed to follow, to the second electrode; and increasing an effective voltage value of the AC power to enhance sputtering at the second electrode such that silicon sputtered from the base material reacts with fluorine radicals generated from the fluorocarbon-based etching gas to produce a reaction product of SiF, to irradiate electrons generated near the second electrode to the target substrate and to increase a plasma potential near a sidewall of the processing chamber. 1. A plasma etching method of forming a hole of a high aspect ratio in a silicon oxide film on a target substrate , the plasma etching method comprising:mounting and supporting the target substrate on a first electrode within a processing chamber in which the first electrode is provided to be parallel with a second electrode with a preset gap, a base material of the second electrode containing silicon or SiC;vacuum exhausting an inside of the processing chamber to a preset pressure;generating plasma of a fluorocarbon-based etching gas in a processing space between the first electrode and the second electrode by supplying the etching gas into the processing space and applying a first high frequency power to the first electrode;applying a low frequency AC power or a high frequency AC power having a frequency, which an ion in the plasma is allowed to follow, to the second electrode via a blocking capacitor; and{'sub': '4', 'increasing an effective voltage value of the AC power of the AC power supply to enhance sputtering at the second electrode by increasing an ...

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Номер записи: 94
26-06-2014 дата публикации

Electrode having heat sinks and coating device

Номер: US20140174919A1
Автор: Li-Ying Wang He
Принадлежит: Hon Hai Precision Industry Co Ltd

An electrode is made of conductive material, and includes a first surface, a second surface, and two opposite side surfaces. The second surface is opposite to the first surface. The two side surfaces are connected to the first surface and the second surface. A number of heat sinks are positioned on the second surface and the two first side surfaces, and are configured for exhausting heat generated by the electrode.

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Номер записи: 95
07-04-2016 дата публикации

WORKPIECE PROCESSING METHOD

Номер: US20160099131A1
Автор: HISAMATSU Toru, HONDA Masanobu, KIHARA Yoshihide
Принадлежит: TOKYO ELECTRON LIMITED

Disclosed is a method of processing a workpiece including a mask. The processing method includes: a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor; a second process of purging a space in the processing container; a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; and a fourth process of purging the space in the processing container. In the processing method, a sequence including the first to fourth processes is repeated. 1. A workpiece processing method including:a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor;a second process of purging a space in the processing container;a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; anda fourth process of purging the space in the processing container,wherein a sequence including the first process to the fourth process is repeated.2. The workpiece processing method of claim 1 , wherein claim 1 , in the first process claim 1 , the processing container is set to a high-pressure and low-power condition that a pressure therein is 13.33 Pa or more and a power of a high-frequency power source for plasma generation is 100 W or less.3. The workpiece processing method of claim 1 , wherein claim 1 , in the first process claim 1 , no bias power for drawing ions is applied to a pedestal that supports the workpiece.4. The workpiece processing method of claim 1 , wherein the silicon halide gas is SiClgas.5. The workpiece processing method of claim 1 , wherein the workpiece further includes an etching target layer claim 1 , an organic film formed on ...

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Номер записи: 96
05-04-2018 дата публикации

Dual-channel showerhead with improved profile

Номер: US20180096821A1
Автор: Dmitry Lubomirsky
Принадлежит: Applied Materials Inc

Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first showerhead and the processing region. The chambers may also include a second showerhead positioned within the chamber between the faceplate and the processing region of the semiconductor processing chamber. The second showerhead may include at least two plates coupled together to define a volume between the at least two plates. The at least two plates may at least partially define channels through the second showerhead, and each channel may be characterized by a first diameter at a first end of the channel and may be characterized by a plurality of ports at a second end of the channel.

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Номер записи: 97
05-04-2018 дата публикации

Plasma generating apparatus, plasma processing apparatus, and method of controlling plasma generating apparatus

Номер: US20180096826A1
Автор: Takeshi Kobayashi
Принадлежит: Tokyo Electron Ltd

A plasma generating apparatus according to the present disclosure includes: a high frequency power supply that generates a high frequency power; a plasma generation electrode connected to the high frequency power supply and formed by a hollow tube in which cooling water is distributed; a conductivity meter that measures conductivity of the cooling water inside the plasma generation electrode; and a controller that controls output of the high frequency power supply based on the conductivity of the cooling water measured by the conductivity meter.

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Номер записи: 98
28-03-2019 дата публикации

PLASMA PROCESSING METHOD

Номер: US20190096635A1
Автор: BANSE Takanori, MORIKITA Shinya, Okunishi Naohiko, TAKAYOSHI Joji, Yokota Akihiro
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet. 1. A plasma processing method for a workpiece in a plasma processing apparatus , the plasma processing apparatus including: a stage configured to provide a placing region for the workpiece, and', 'provided in the inner space, the center of the placing region being located on a central axis of the chamber body;', 'a lower electrode provided in the stage;', 'a gas supply unit configured to supply a first gas and a second gas to the inner space of the chamber body;', 'a first radio frequency power supply configured to supply first radio frequency waves;', 'a second radio frequency power supply electrically connected to the lower electrode and configured to supply second radio frequency waves having a frequency lower than a frequency of the first radio frequency waves; and', 'an electromagnet configured to form a magnetic field in the inner space of the chamber body,, 'a chamber body configured to provide an inner space;'}the plasma processing method comprising:providing the workpiece in the inner space of the chamber body;performing a first plasma processing on the workpiece by plasma generated from a first gas supplied to the inner space; andperforming a second plasma processing on the workpiece by plasma generated from a second gas supplied to the inner space,wherein power of the second radio frequency waves set in the second plasma processing is greater than power of the ...

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Номер записи: 99
14-04-2016 дата публикации

TEMPERATURE CONTROL SYSTEM AND TEMPERATURE CONTROL METHOD

Номер: US20160104605A1
Автор: Hiroki Tsutomu
Принадлежит:

There is provided a temperature control system, including: a stage configured to support a workpiece and provided with a heat exchange medium flow path formed within the stage, the heat exchange medium flow path including a first end and a second end; a first valve; a second valve; a first heat exchange medium supply device including a supply port which supplies a first heat exchange medium adjusted to have a first temperature and a recovery port; a second heat exchange medium supply device including a supply port which supplies a second heat exchange medium adjusted to have a second temperature higher than the first temperature and a recovery port; and a control device configured to control the first and second valves such that the first and second heat exchange mediums are alternately supplied to the first end of the heat exchange medium flow path. 1. A temperature control system , comprising:a stage configured to support a workpiece and provided with a heat exchange medium flow path formed within the stage, the heat exchange medium flow path including a first end and a second end, a heat exchange medium flowing from the first end to the second end of the heat exchange medium flow path;a first valve;a second valve;a first heat exchange medium supply device including a supply port which supplies a first heat exchange medium adjusted to have a first temperature and a recovery port, the supply port being connected to the first end of the heat exchange medium flow path through the first valve;a second heat exchange medium supply device including a supply port which supplies a second heat exchange medium adjusted to have a second temperature higher than the first temperature and a recovery port, the supply port of the second heat exchange medium supply device connected to the first end of the heat exchange medium flow path through the second valve; anda control device configured to control the first valve and the second valve such that the first heat exchange medium ...

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Номер записи: 100