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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 4463. Отображено 100.
19-01-2012 дата публикации

Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system

Номер: US20120012458A1
Автор: Andreas Lopp, Juergen GRILLMAYER, Wolfgang Krock
Принадлежит: Applied Materials Inc

The disclosure relates to a magnet arrangement for a sputtering system, wherein the magnet arrangement is adapted for a rotatable target of a sputtering system and includes: a first magnet element extending along a first axis; a second magnet element being disposed around the first magnet element symmetrically to a first plane; wherein the second magnet element includes at least one magnet section intersecting the first plane; and wherein a magnetic axis of the at least one magnet section is inclined with respect to a second plane being orthogonal to the first axis. Further, the disclosure relates to a target backing tube for a rotatable target of a sputtering system, a cylindrical rotatable target for a sputtering system, and a sputtering

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Номер записи: 1
19-01-2012 дата публикации

Integrated anode and activated reactive gas source for use in a magnetron sputtering device

Номер: US20120012459A1
Автор: Georg J. Ockenfuss
Принадлежит: JDS Uniphase Corp

The invention relates to an integrated anode and activated reactive gas source for use in a magnetron sputtering device and a magnetron sputtering device incorporating the same. The integrated anode and activated reactive gas source comprises a vessel having an interior conductive surface, comprising the anode, and an insulated outer body isolated from the chamber walls of the coating chamber. The vessel has a single opening with a circumference smaller that that of the vessel in communication with the coating chamber. Sputtering gas and reactive gas are coupled through an input into the vessel and through the single opening into the coating chamber. A plasma is ignited by the high density of electrons coming from the cathode and returning to the power supply through the anode. A relatively low anode voltage is sufficient to maintain a plasma of activated reactive gas to form stoichiometric dielectric coatings.

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Номер записи: 2
09-02-2012 дата публикации

Reactive sputtering with multiple sputter sources

Номер: US20120031749A1
Автор: Hartmut Rohrmann, Kurt Ruhm, Martin Dubs
Принадлежит: OC OERLIKON BALZERS AG

The apparatus ( 1 ) for coating a substrate ( 14 ) by reactive sputtering comprises an axis ( 8 ), at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ) and a power supply connected to the targets ( 11,12 ), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate ( 14 ) by coating a substrate ( 14 ) by reactive sputtering in an apparatus ( 1 ) comprising an axis ( 8 ). The method comprises a) providing a substrate ( 14 ) to be coated; b) providing at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ); c) alternatively operating said targets ( 11,12 ) as cathode and anode during coating. Preferably, the targets ( 11,12 ) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

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Номер записи: 3
16-02-2012 дата публикации

Rotatable sputter target base, rotatable sputter target, coating installation, method of producing a rotatable sputter target, target base connection means, and method of connecting a rotatable target base device for sputtering installations to a target base support

Номер: US20120037503A1
Автор: Lothar Lippert, Oliver Heimel
Принадлежит: Applied Materials Inc

A rotatable target base device for sputtering installations is provided, wherein the target base device is adapted for receiving thereon a solid target cylinder, the rotatable target base device comprising a target base cylinder ( 4 ) having a lateral surface ( 3 ), a middle part ( 12 ), a first end region ( 7 ) and a second end region ( 9 ) opposite to the first end region, wherein at least one of the first and the second end regions has a maximum outer diameter substantially equal to or less than the outer diameter of the middle part.

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Номер записи: 4
21-06-2012 дата публикации

Method and apparatus to produce high density overcoats

Номер: US20120152726A1
Автор: Michael A. Russak, Quang N. Tran, Samuel D. HARKNESS IV, Terry Bluck
Принадлежит: Intevac Inc

A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

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Номер записи: 5
21-06-2012 дата публикации

High density plasma etchback process for advanced metallization applications

Номер: US20120152896A1
Автор: Chunming Zhou, Emery Kuo, Huatan Qiu, Karthik Colinjivadi, KieJin Park, Liqi Wu
Принадлежит: Novellus Systems Inc

A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.

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Номер записи: 6
28-06-2012 дата публикации

Sputtering apparatus

Номер: US20120160672A1
Автор: Tetsuya Endo
Принадлежит: Canon Anelva Corp

A sputtering apparatus includes a target electrode capable of mounting a target, a first support member which supports the target electrode, a magnet unit which forms a magnetic field on a surface of the target, a second support member which supports the magnet unit, and a force generation portion which is provided between the first support member and the second support member, and generates a second force in a direction opposite to a first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit, wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode.

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Номер записи: 7
02-08-2012 дата публикации

Method for determining process-specific data of a vacuum deposition process

Номер: US20120193219A1
Автор: Volker Linss
Принадлежит: VON ARDENNE ANLAGENTECHNIK GMBH

A method for determining process-specific data of a vacuum deposition process, in which a substrate is coated in a vacuum chamber by a material detached from a target connected to a magnetron, an optical emission spectrum being recorded and process-significant data of the vacuum deposition process being determined therefrom for further processing in measurement or regulating processes, is optimized to minimize errors in the determination of process-significant data. At least three intensities of spectral lines of at least two process materials are determined from the optical emission spectrum. From these, single and multiple intensities are mathematically correlated with and to one another and a process-significant datum, which is used in subsequent measurement or regulating processes, is determined from the relation results by a further mathematical relation.

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Номер записи: 8
02-05-2013 дата публикации

Film formation apparatus and film formation method

Номер: US20130105310A1
Автор: Hiroshi Tamagaki, Kenji Yamamoto, Satoshi Hirota
Принадлежит: Kobe Steel Ltd

A film formation apparatus of the present invention has two sputtering evaporation sources each of which includes an unbalanced magnetic field formation means formed by an inner pole magnet arranged on the inner side and an outer pole magnet arranged on the outer side of this inner pole magnet, the outer pole magnet having larger magnetic line density than the inner pole magnet, and a target arranged on a front surface of the unbalanced magnetic field formation means, and further has an AC power source for applying alternating current whose polarity is switched with a frequency of 10 kHz or more between the targets of the two sputtering evaporation sources so as to generate discharge between both the targets and perform film formation.

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Номер записи: 9
30-05-2013 дата публикации

Thin film manufacturing method, thin film manufacturing device, and liquid crystal display device manufacturing method

Номер: US20130134034A1
Автор: Hiroaki Yonekura, Hironobu Inoue
Принадлежит: Panasonic Liquid Crystal Display Co Ltd

Provided is a thin film manufacturing method which is capable of reducing foreign matters to be adhered to a substrate in number while lowering the arcing count. The thin film manufacturing method involves placing a magnet unit ( 5 ) which includes a first magnet ( 51 ) and a second magnet ( 52 ). The first magnet ( 51 ) has a first polarity on its top face which is opposed to a target ( 94 ). The second magnet ( 52 ) has a second polarity on its top face and is arranged around the first magnet ( 51 ). The method also involves reducing a closest distance between an edge ( 52 a ) of the magnet unit ( 5 ) and an edge ( 94 a ) of the target ( 94 ) in a Y-direction as an amount of the target ( 94 ) used increases.

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Номер записи: 10
13-06-2013 дата публикации

Apparatus and method for depositing hydrogen-free ta-c layers on workpieces and workpiece

Номер: US20130146443A1
Автор: Frank Papa, Ivan KOLEV, Roel Tietema, Ruud Jacobs
Принадлежит: HAUZER TECHNO COATING BV

An apparatus for the manufacture of at least substantially hydrogen-free ta-C layers on substrates, which includes a vacuum chamber, which is connectable to an inert gas source and a vacuum pump, a support device in the vacuum chamber, at least one graphite cathode having an associated magnet arrangement forming a magnetron that serves as a source of carbon material, a bias power supply for applying a negative bias voltage to the substrates on the support device, at least one cathode power supply for the cathode, which is connectable to the at least one graphite cathode and to an associated anode and which is designed to transmit high power pulse sequences spaced at intervals of time, with each high power pulse sequence comprising a series of high frequency DC pulses adapted to be supplied, optionally after a build-up phase, to the at least one graphite cathode.

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Номер записи: 11
08-08-2013 дата публикации

Sputtering sources for high-pressure sputtering with large targets and sputtering method

Номер: US20130199924A1
Автор: Mikhail Faley, Ulrich Poppe
Принадлежит: FORSCHUNGSZENTRUM JUELICH GMBH

A sputtering head comprises a receiving area for a sputtering target (target receptacle). The sputtering head comprises one or more magnetic field sources so as to generate a stray magnetic field. The magnetic north and the magnetic south of at least one magnetic field source, between which the stray field forms, are located 10 mm or less, preferably 5 mm or less, and particularly preferably approximately 1 mm apart. It was found that, notably when sputtering at a high sputtering gas pressure of 0.5 mbar or more, the degree of ionization of the sputtering plasma, and consequently also the ablation rate of the sputtering target, can be locally adjusted by such a locally effective magnetic field. This allows the thicknesses of the layers that are obtained to be more homogeneous over the surface of the substrate. Advantageously, the sputtering head additionally comprises a solid state insulator, which surrounds the base body comprising the target receptacle and the sputtering target (all connected to potential) and electrically insulates the same from the shield that spatially limits the material ablation to the sputtering target (connected to ground).

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Номер записи: 12
24-10-2013 дата публикации

Manufacturing apparatus

Номер: US20130277207A1
Автор: Koji Tsunekawa
Принадлежит: Canon Anelva Corp

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

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Номер записи: 13
05-12-2013 дата публикации

Magnetron sputtering system

Номер: US20130319855A1
Автор: Jinlei Li
Принадлежит: Shenzhen China Star Optoelectronics Technology Co Ltd

A magnetron sputtering system is disclosed in the present invention. A chamber includes a target holder, a substrate holder and a magnetic-field generating component. The magnetic-field generating component is configured to generate a magnetic field in a surrounding area of a substrate to be sputtered and deposited. The present invention can avoid the charged molecules and the cathode ions generated by the target hitting the to-be-sputtered/deposited substrate with higher energy. Therefore, it can avoid the damage of the to-be-sputtered/deposited substrate and decrease the stress of depositing the thin film on the substrate, as so to increase the yield of the products.

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Номер записи: 14
27-02-2014 дата публикации

Apparatus for cylindrical magnetron sputtering

Номер: US20140054168A1
Автор: John R. German, Klaus H.W. HARTIG
Принадлежит: Cardinal CG Co

A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect.

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Номер записи: 15
13-03-2014 дата публикации

Method for Modifying a Surface of a Substrate using Ion Bombardment

Номер: US20140072721A1
Автор: Fahland Matthias, Kleinhempel Ronny, Munzert Peter, Schoenberger Waldemar, Schulz Ulrike, Thielsch Roland
Принадлежит: SOUTHWALL EUROPE GMBH

A process is described for modification of a surface of a substrate by ion bombardment, in which the ions are produced by means of a magnetic field-assisted glow discharge in a process gas. The magnetic field-assisted glow discharge is produced by means of a magnetron having an electrode and at least one magnet for production of the magnetic field. The process gas has at least one electronegative constituent, such that negative ions are produced in the magnetic field-assisted glow discharge, and the negative ions which are produced at the surface of the electrode are accelerated in the direction of the substrate by an electrical voltage applied to the electrode. 114-. (canceled)15. A process for making a device , the process comprising:producing ions by means of a magnetic field-assisted glow discharge in a process gas; andmodifying a surface of a substrate by ion bombardment using the ions;wherein the magnetic field-assisted glow discharge is produced using a magnetron having an electrode and a magnet to produce the magnetic field;wherein the process gas has an electronegative constituent, such that negative ions are produced in the magnetic field-assisted glow discharge;wherein the negative ions that are produced at the surface of the electrode are accelerated toward the substrate by an electrical voltage applied to the electrode;wherein the negative ions that hit the substrate bring about the modification of the surface of the substrate; andwherein the ion bombardment produces a surface structure at the surface of the substrate that extends at least 50 nm deep into the substrate.16. The process according to claim 15 , wherein the electrical voltage has a frequency between 1 kHz and 250 kHz.17. The process according to claim 15 , wherein the electronegative constituent of the process gas is oxygen.18. The process according to claim 15 , wherein the electronegative constituent of the process gas is fluorine or chlorine.19. The process according to claim 15 , ...

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Номер записи: 16
27-03-2014 дата публикации

Racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering

Номер: US20140085024A1
Автор: Yoshihiko Kuriyama
Принадлежит: Hitachi Metals Ltd

A racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering having a linear portion and corner portions, which comprises a center magnetic pole member; a peripheral magnetic pole member surrounding the center magnetic pole member; pluralities of permanent magnets arranged between the center magnetic pole member and the peripheral magnetic pole member to have magnetic poles aligned in one direction; and a non-magnetic base member supporting them; permanent magnets arranged in at least the linear portion being inclined with their surfaces on the side of the center magnetic pole member lower, and with their outside magnetic pole surfaces not in contact with the peripheral magnetic pole member in lower portions; the distance between the center magnetic pole member and the target being the same as the distance between the peripheral magnetic pole member and the target, thereby generating a uniform magnetic field on a target surface.

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Номер записи: 17
01-01-2015 дата публикации

MANUFACTURING APPARATUS

Номер: US20150001068A1
Автор: TSUNEKAWA Koji
Принадлежит:

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

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Номер записи: 18
03-01-2019 дата публикации

SPUTTER DEVICES AND METHODS

Номер: US20190003039A1
Автор: Geisler Michael, Kress Markus, Portka Martin, Schwarz Florian Peter
Принадлежит:

Sputter devices comprise a vacuum supply, a gas supply, a substrate holding device, and sputter sources. Each sputter source is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point. The sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface. The source reference surface is parallel to the substrate reference surface. At least one of the sputter sources has a source distance deviating from zero. 1. A sputter device for sputtering deposition of a layer on a three-dimensionally shaped substrate surface of a substrate in a deposition area , the sputter device comprising in a deposition section of the sputter device:at least one vacuum supply for generation of a vacuum in the deposition section;a gas supply for introduction of process gas for the sputtering deposition in the deposition section;a substrate holding device for support of the substrate relative to a substrate reference surface of the substrate holding device; andsputter sources, each of which is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point, wherein the sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface, wherein the source reference surface is parallel to the substrate reference surface, wherein at least one of the sputter sources has a source distance deviating from zero, and wherein the source distance is measured between the source reference surface and the individual reference point of ...

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Номер записи: 19
04-01-2018 дата публикации

Film forming apparatus

Номер: US20180005800A1
Автор: Masato Kon
Принадлежит: Toppan Printing Co Ltd

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

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Номер записи: 20
08-01-2015 дата публикации

PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR

Номер: US20150007940A1
Автор: Funazaki Kazunori, KANEKO Kazushi, KATO Hideo
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components. 1. A plasma processing device which processes an object to be processed using plasma , the plasma processing device comprising:a processing container configured to perform a processing by the plasma therein; anda plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves, and the plasma generation mechanism being configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator,wherein the high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator, the signal having a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and having reduced different frequency components.2. The plasma processing device of claim 1 , wherein the high-frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high-frequency ...

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Номер записи: 21
08-01-2015 дата публикации

In-vacuum rotational device

Номер: US20150008120A1
Автор: Jonathan Price
Принадлежит: Gencoa Ltd

This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerisation, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control. This invention also relates to the arrangement of these devices as a singularity or a plurality of units. This invention also relates to the target construction which can be used in such device. This invention also relates to the use of these devices in different power modes such as DC, DC pulsed, RF, AC, AC dual, HIPIMS, or any other powering mode in order to generate a plasma, such as sputtering plasma, plasma arc, electron beam evaporation, plasma polymerization plasma, plasma treatment or any other plasma generated for the purpose of a process, for example, and not exclusively, as deposition process or surface treatment process, etc.

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Номер записи: 22
27-01-2022 дата публикации

ROTARY MAGNETRON SPUTTERING WITH INDIVIDUALLY ADJUSTABLE MAGNETIC FIELD

Номер: US20220028672A1
Автор: POLLE Alexander, WAGNER Dominik
Принадлежит:

A magnetron assembly for magnetron sputtering with rotary cathode systems is provided. The magnetron assembly comprises a plurality of magnets attached to a plurality of yokes and a plurality of driving modules, each comprising an actuating mechanism operatively coupled to at least one of the plurality of yokes. The plurality of driving modules are adapted for adjusting the position of the plurality of yokes individually. 116-. (canceled)17. A magnetron assembly for magnetron sputtering comprising:a plurality of magnets attached to a plurality of yokes; anda plurality of driving modules, the driving modules each comprising an actuating mechanism operatively coupled to at least one of the plurality of yokes; andwherein the plurality of driving modules are adapted for adjusting the position of the plurality of yokes individually.18. The magnetron assembly according to claim 17 , wherein the plurality of driving modules are attached along an elongated support bar and displace the yokes claim 17 , whereby the displacement has a component perpendicular to the elongated support bar.19. The magnetron assembly according to claim 17 , wherein each of the actuating mechanisms provided by the plurality of driving modules comprises at least one actuator which can be controlled separately from the other actuators.20. The magnetron assembly according to claim 19 , wherein each actuator comprises a stepper motor that displaces the respective yoke away from and/or toward an elongated support bar claim 19 , and at least one stopper defining a maximum and a minimum displacement of the yoke with respect to the elongated support bar.21. The magnetron assembly according to claim 17 , further comprising:a plurality of slave controllers connected to a master controller, wherein each of the slave controllers is in operative communication with a corresponding driving module.22. The magnetron assembly according to claim 21 ,wherein the master controller receives signals from outside the ...

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Номер записи: 23
27-01-2022 дата публикации

Method and system for adjustable coating using magnetron sputtering systems

Номер: US20220028673A1
Автор: Dominik Wagner
Принадлежит: Lnterpane Entwicklungs und Beratungsgesellschaft Mbh

A method and a system for adjustable coating on a substrate using a magnetron sputtering apparatus are provided. The method comprises the steps of providing a magnetron assembly which comprises a plurality of magnets attached to a plurality of yokes and a plurality of actuating mechanisms ( 208 ), each operatively coupled to at least one of the plurality of yokes. The method further comprises automatically determining individual positions of each of the plurality of yokes of the magnetron assembly on the basis of at least one parameter, and adjusting individually positions of each of the plurality of yokes of the magnetron assembly in accordance with the automatically determined individual positions.

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Номер записи: 24
12-01-2017 дата публикации

MAGNETRON AND MAGNETRON SPUTTERING DEVICE

Номер: US20170011894A1
Автор: BAI Zhimin, DING Peijun, Li Qiang, LV Feng, QIU Guoqing, WANG Hougong, Yang Yujie
Принадлежит: Beijing NMC Co., Ltd.

Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=aθn+b(cos θ)m+c(tan θ)k+d, 0<=n<=2, 0<=m<=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness. 2. The magnetron according to claim 1 , wherein the width of the gap gradually decreases or gradually increases from the spiral center to the spiral periphery.3. The magnetron according to claim 1 , wherein the width of the gap ranges from 10 mm to 60 mm.4. The magnetron according to claim 1 , wherein quantities of the spiral lines forming the inner magnetic pole and the outer magnetic pole are both three.5. (canceled)6. The magnetron according to claim 5 , wherein polar coordinate equations for the three spiral lines of the inner magnetic pole are claim 5 , respectively:{'br': None, 'i': 'r=', 'sup': 1.701', '1.244, '4.875×θ+1.46×(cos θ)−26.72, where 1.5π≦θ≦2.6π;'}{'br': None, 'i': 'r=', 'sup': 1.235', '1.362, '8.31×θ+10.84×(cos θ)+39.02, where 1.72π≦θ≦3.14π;'}{'br': None, 'i': 'r=', 'sup': 2', '1.695, '4.64×θ+35.84×(cos θ)−48.52, where 1.1π≦θ≦1.72π; and'} [{'br': None, 'i': 'r=', 'sup': 1.92', '1.56, '4.75×θ+1.25×(cos θ)+32.49, where 0.25≦θ≦2π;'}, {'br': None, 'i': 'r=', 'sup': 0.78', '1.12, '17.54×θ+5.45×(cos θ)+179.42, where 0 ...

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Номер записи: 25
15-01-2015 дата публикации

MAGNETIC FIELD GENERATION APPARATUS AND SPUTTERING APPARATUS

Номер: US20150014158A1
Автор: ABE ATSUHIRO, Hiratsuka Ryoichi, Sasaki Jun
Принадлежит:

Provided is a magnetic field generation apparatus including: two or more main magnetic pole portions configured to generate a main magnetic field; one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field; and a yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions. 1. A magnetic field generation apparatus , comprising:two or more main magnetic pole portions configured to generate a main magnetic field;one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field; anda yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions.2. The magnetic field generation apparatus according to claim 1 , wherein:the two or more main magnetic pole portions each include a plurality of second divisional magnets obtained by a division; andthe yoke portion includes two or more second yokes opposing the plurality of second divisional magnets in correspondence with the two or more main magnetic pole portions.3. The magnetic field generation apparatus according to claim 2 , further comprisinga generation portion that is a generation position of the main magnetic field,wherein:the two or more main magnetic pole portions include a first main magnetic pole portion having an N pole on the generation portion side and a second main magnetic pole portion having an S pole on the generation portion side;the one or more secondary magnetic pole portions include a first secondary magnetic pole portion that is provided in the vicinity of the second main magnetic pole portion between the ...

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Номер записи: 26
14-01-2016 дата публикации

Online Adjustable Magnet Bar

Номер: US20160013034A1
Автор: De Bosscher Wilmert, GOBIN Guy, VAN DE PUTTE Ivan
Принадлежит:

An end-block for rotatably carrying a sputtering target tube and for rotatably restraining a magnet bar inside the sputtering target tube includes a receptacle for receiving a magnet bar fitting. The receptacle comprises a first part of a signal connector arranged to receive a second part of a signal connector from the magnet bar fitting, and allow a signal connector between the end-block and the magnet bar to be formed. The end-block is adapted for providing protection means to the signal connector for protecting it from degradation, destruction or interference of a power and/or data signal transmitted between the end-block and the magnet bar, due to surrounding cooling fluid and/or surrounding high energy fields. The disclosure provides a corresponding magnet bar, and a method for adjusting a magnetic configuration of a magnet bar in a cylindrical sputtering apparatus. 125-. (canceled)26. An end-block for rotatably carrying a sputtering target tube and for restraining a magnet bar inside said sputtering target tube , said end-block comprising a receptacle for receiving a magnet bar fitting , wherein said receptacle comprises a first part of a signal connector arranged to receive a second part of a signal connector from said magnet bar fitting and allowing a signal connection between the end-block and the magnet bar to be formed , the end-block being adapted for providing protection means to the signal connector for protecting it from degradation , destruction or interference of a power and/or data signal transmitted between the end-block and the magnet bar due to surrounding cooling fluid and/or due to surrounding high energy fields.27. An end-block according to claim 26 , wherein the first part of the signal connector is adapted for transmitting an electrical power and/or data signal.28. An end-block according to claim 26 , wherein the protection means includes the first part of the signal connector comprising an electrically conductive and non-corroding material ...

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Номер записи: 27
11-01-2018 дата публикации

MAGNETRON PLASMA APPARATUS

Номер: US20180012738A9
Автор: BARANKOVA Hana, BARDOS Ladislav
Принадлежит:

A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas. 1. A magnetron plasma apparatus boosted by hollow cathode plasma for plasma processing on a substrate in a reactor , comprising a parallel plate hollow cathode with a slit wherein a hollow cathode effect can be excited , magnetron sputtering apparatus with a magnetron target , an electric power generator for generation of plasma and a magnetic system generating a magnetron magnetic field giving form to an erosion zone on the magnetron target surface and spatial shape of the magnetron plasma , whereinat least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm has an opening following an outer edge of a sputter erosion zone on magnetron target so that a magnetron magnetic field forms a perpendicular magnetic induction component inside a hollow cathode slit between said plates and;said pair of plates and is connected to a first electric power generator together with said target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in ...

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Номер записи: 28
03-02-2022 дата публикации

LOW PROFILE DEPOSITION RING FOR ENHANCED LIFE

Номер: US20220037128A1
Автор: CHAN Anthony Chih-Tung, Gunther David, SAVANDAIAH Kirankumar Neelasandra, Song Jiao, Wysok Irena H.
Принадлежит:

Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge. 1. A deposition ring for use in a process chamber , comprising:an annular body;an inner wall extending upward from an inner portion of the annular body; andan outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge;wherein an inner surface of the outer wall includes a vertical portion and a rounded portion extending from the vertical portion to a bottom surface of the large deposition cavity; andwherein an outer surface of the inner wall includes a vertical portion and a rounded portion extending from the vertical portion to the bottom surface of the large deposition cavity.2. The deposition ring of claim 1 , wherein the inner ledge is raised about 0.05 inches to about 0.15 inches with respect to the outer ledge.3. The deposition ring of claim 1 , wherein the width of the large deposition cavity is about 0.48 inches to about 0.55 inches.4. The deposition ring of claim 1 , wherein a height of the large deposition cavity from a bottom surface of the large deposition cavity to a top surface of the inner wall is about 0.05 inches to about 0.20 inches.5. The deposition ring of claim 1 , wherein a thickness of the annular body ...

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Номер записи: 29
03-02-2022 дата публикации

Deposition System With Multi-Cathode And Method Of Manufacture Thereof

Номер: US20220037136A1
Автор: Anantha K. Subramani, Ashish Goel, Chi Hong Ching, DEEPAK JADHAV, Hanbing Wu, Prashanth Kothnur
Принадлежит: Applied Materials Inc

A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

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Номер записи: 30
18-01-2018 дата публикации

Sputtering target with backside cooling grooves

Номер: US20180019108A1
Автор: Brian T. West, Jeonghoon Oh, Michael S. Cox
Принадлежит: Applied Materials Inc

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

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Номер записи: 31
22-01-2015 дата публикации

System and method for balancing consumption of targets in pulsed dual magnetron sputtering (dms) processes

Номер: US20150021167A1
Автор: David Christie
Принадлежит: Advanced Energy Industries Inc

A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

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Номер записи: 32
17-01-2019 дата публикации

CATHODE ASSEMBLY HAVING A DUAL POSITION MAGNETRON AND CENTRALLY FED COOLANT

Номер: US20190019658A1
Автор: Chih-Tung Chan Anthony, Prabhu Prashant, SAVANDAIAH Kirankumar, Song Jiao, Wysok Irena H.
Принадлежит:

Embodiments of a magnetron assembly and a processing system incorporating same are provided herein. In some embodiments, a magnetron assembly includes a body extending along a central axis of the magnetron assembly; a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; and a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets. 1. A magnetron assembly , comprising:a body extending along a central axis of the magnetron assembly;a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; anda rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets.2. The magnetron assembly of claim 1 , wherein the rotatable magnet assembly is configured to rotate about the central axis at a first distance from the central axis and a second distance from the central axis.3. The magnetron assembly of claim 2 , further comprising:a first sensor configured to detect when the rotatable magnet assembly is rotating at the first distance; anda second sensor configured to detect when the rotatable magnet assembly is rotating at the second distance.4. The magnetron assembly of claim 3 , wherein the rotatable magnet assembly further comprises:an indicating element detectable by the first and second sensors to determine whether the plurality of magnets are being rotated at the first distance or the second distance.5. The magnetron assembly of claim 1 , wherein the rotatable magnet assembly is configured to move vertically.6. The magnetron assembly of claim 5 , further comprising:a third sensor configured to determine if the rotatable magnet assembly is rotating and to determine a vertical position of the rotatable magnet assembly.7. The magnetron assembly of claim 1 , wherein the plurality of magnets are ...

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Номер записи: 33
21-01-2021 дата публикации

DEPOSITING APPARATUS

Номер: US20210020417A1
Автор: BYEON Jaeho, KIM Hyun-woo, LEE KWANYONG, NAM SANGMOK
Принадлежит:

A deposition apparatus, including: a substrate supporter, wherein a substrate is fixed to the substrate supporter; a target facing the substrate; a first magnet assembly disposed below the target and including a first magnet extending in a first direction and having a first length, and a second magnet at least partially surrounding the first magnet; and a second magnet assembly disposed below the target and spaced apart from the first magnet assembly in a second direction which is substantially perpendicular to the first direction, and including a first magnet extending in the first direction and having a second length greater than the first length, and a second magnet at least partially surrounding the first magnet, and wherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly have substantially the same length as each other in the first direction. 1. A deposition apparatus , comprising:a substrate supporter, wherein a substrate is fixed to the substrate supporter;a target facing the substrate;a first magnet assembly disposed below the target and including a first magnet extending in a first direction and having a first length, and a second magnet at least partially surrounding the first magnet; anda second magnet assembly disposed below the target and spaced apart from the first magnet assembly in a second direction which is substantially perpendicular to the first direction, and including a first magnet extending in the first direction and having a second length greater than the first length, and a second magnet at least partially surrounding the first magnet, andwherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly have substantially the same length as each other in the first direction.2. The deposition apparatus of claim 1 , wherein the first and second magnet assemblies reciprocate along the second direction.3. The deposition apparatus of claim 1 , wherein the ...

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Номер записи: 34
28-01-2016 дата публикации

PRODUCTION METHOD FOR TRANSPARENT CONDUCTIVE FILM

Номер: US20160024644A1
Автор: Machinaga Hironobu, Sasa Kazuaki, Yamamoto Yusuke
Принадлежит: NITTO DENKO CORPORATION

A method for producing a transparent conductive film includes: 1. A method for producing a transparent conductive film comprising an organic polymer film substrate and a transparent conductive coating provided on at least one surface of the organic polymer film substrate , the method comprising:the step (A) of forming a transparent conductive coating on at least one surface of an organic polymer film substrate in the presence of inert gas by RF superimposed DC sputtering deposition using an indium-based complex oxide target with a high horizontal magnetic field of 85 to 200 mT at a surface of the target in a roll-to-roll system, wherein the indium-based complex oxide target has a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), whereinthe transparent conductive coating has a thickness in the range of 10 to 40 nm, and{'sup': −4', '−4, 'the transparent conductive coating has a specific resistance of 1.3×10to 2.8×10Ω·cm.'}2. The method for producing the transparent conductive film according to claim 1 , wherein the transparent conductive coating is provided on the film substrate with an undercoat layer interposed therebetween.3. The method for producing the transparent conductive film according to claim 1 , wherein the indium-based complex oxide is an indium-tin complex oxide claim 1 , and the tetravalent metal element oxide is tin oxide.4. The method for producing the transparent conductive film according to claim 1 , wherein in the forming step (A) claim 1 , the high magnetic field RF superimposed DC sputtering deposition is performed with a ratio of RF power to DC power of 0.4 to 1.2 when an RF power source has a frequency of 10 to 20 MHz.5. The method for producing the transparent conductive film according to claim 1 , wherein in the forming step (A) claim 1 , the high magnetic ...

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Номер записи: 35
26-01-2017 дата публикации

SYSTEMS AND METHODS FOR SINGLE MAGNETRON SPUTTERING

Номер: US20170022604A1
Автор: CHRISTIE David, Larson Skip B.
Принадлежит:

A system and method for single magnetron sputtering are described. One example includes a system having a power supply, a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate. This example also has a datastore with uncoated anode characterization data and an anode sputtering adjustment system including an anode analysis component to generate a first health value. The first health value is indicative of whether the anode is coated with a dielectric material. This example also has an anode power controller to receive the first health value and provide an anode-energy-control signal to the pulse controller of the pulsed DC power supply to adjust a second anode sputtering energy relative to a first anode sputtering energy to eject at least a portion of the dielectric material from the anode. 1. A system for single magnetron sputtering comprising:a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate;a pulsed DC power supply coupled to the target and the anode, the pulsed power supply including a pulse controller to supply both a first target sputtering energy to the target with a first voltage polarity and a second target sputtering energy to the target with the first voltage polarity, the pulse controller configured to supply a first anode sputtering energy immediately following the first target sputtering energy with a second voltage polarity, and supply a second anode sputtering energy immediately following the second target sputtering energy with the second voltage polarity, wherein the second voltage polarity is opposite the first voltage polarity;an anode monitor system comprising a voltage monitor to detect a first anode voltage at a first process variable value;a datastore comprising uncoated anode characterization data derived from characteristics of an uncoated anode that is not coated with a dielectric material, the uncoated anode ...

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Номер записи: 36
28-01-2016 дата публикации

Magnetron sputtering gun assembly

Номер: US20160025871A1
Автор: Bo-Huei Liao, Chien-Nan Hsiao
Принадлежит: NATIONAL APPLIED RESEARCH LABORATORIES

A magnetron sputtering gun device used in vacuum for sputtering to form a thin film, which comprises a magnet copper seat, a magnetic element, a conductive element, a sputtering target, a target fixation assembly, a cylinder-shape protection mask, and a sputtering inclination assembly. By enhancing the magnet copper seat, the magnetron sputtering gun device is equipped with capability of increased film coating speed and increased compound ability between the thin film and the reaction gas. A ferromagnetic material may be coated. The magnet copper seat may be designed so that the sputtering target and strong magnets therewithin may be conveniently detached. In this structure, a cooling water tubing and the strong magnets are separated, lengthening a lifetime of the strong magnets and protecting the strong magnets from demagnetization. The sputtering inclination assembly may further increase a uniformity of the thin film thickness.

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Номер записи: 37
10-02-2022 дата публикации

Magnetically Enhanced High Density Plasma-Chemical Vapor Deposition Plasma Source For Depositing Diamond and Diamond-Like Films

Номер: US20220042168A1
Автор: Abraham Bassam Hanna
Принадлежит: IonQuest Corp.

A method of sputtering a layer on a substrate includes positioning an HEDP magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), wherein the PCN comprises at least one inductor and at least one capacitor; and adjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN. The substrate is operatively coupled to ground by a first diode, thereby attracting positively charged ions sputtered from the cathode target and plasma to the substrate. A corresponding apparatus and computer-readable medium are also disclosed. 1. A method of sputtering a layer on a substrate using a high-energy density plasma (HEDP) magnetron , the method comprising:positioning the HEDP magnetron in a vacuum with an anode, a cathode target, a magnet assembly, the substrate, and a feed gas;applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), the PCN comprising at least one inductor and at least one capacitor; andadjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN, the PCN converting the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HEDP magnetron with pulse current densities in a range of about 0.1 to 20 A/cm2, the asymmetric AC signal operatively coupled to the cathode target, the asymmetric AC signal ...

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Номер записи: 38
26-01-2017 дата публикации

DEPOSITION OF THICK MAGNETIZABLE FILMS FOR MAGNETIC DEVICES

Номер: US20170025258A1
Автор: Cerio Frank M., Hieronymi Robert Gabriel
Принадлежит:

A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)9. The sputtering tool of wherein the radially opposed regions are approximately sixty degrees in radial width.10. The sputtering tool of wherein in a first radial region the distance of the outer ring from the central axis reduces by approximately one-fourth.11. The sputtering tool of wherein in a second radial region the distance of the outer ring from the central axis reduces by approximately three-fourths.12. The sputtering tool of wherein in a second radial region the distance of the outer ring from the central axis reduces by approximately three-fourths.13. The sputtering tool of wherein in a first radial region the distance of the inner ring from the central axis reduces by approximately one third.14. The sputtering tool of wherein in a second radial region the inner ring diverges substantially to the central axis.15. The sputtering tool of wherein in a second radial region the inner ring diverges substantially to the central axis. The present invention is a divisional application that claims priority to U.S. Ser. No. 14/324,937 filed Jul. 7, 2014, which is a non-provisional application of U.S. Ser. No. 61/843,571, filed Jul. 8, 2013, all of which are incorporated herein ...

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Номер записи: 39
28-01-2016 дата публикации

CLOSED DRIFT MAGNETIC FIELD ION SOURCE APPARATUS CONTAINING SELF-CLEANING ANODE AND A PROCESS FOR SUBSTRATE MODIFICATION THEREWITH

Номер: US20160027608A1
Автор: Madocks John
Принадлежит:

A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided. 115-. (canceled)16. An apparatus for deposition of a film onto a surface of a substrate comprising:a first closed drift ion source having an electrically isolated first anode electrode and other components comprising ferromagnetic cathode poles and magnets that form a closed drift magnetic field, said other components being grounded or supporting an electrical float voltage;a power supply for selectively powering said first anode electrode with a charge bias with a positive charge bias duration and a negative charge bias duration; andan electron emitter supplying electrons to said first anode electrode when the first electrode charge bias is positive.17. The apparatus of wherein the closed drift magnetic field passes through at least one of said other components.18. The apparatus of wherein said electron emitter is a second closed drift ion source having a second anode electrode with a second electrode charge bias that is opposite the first electrode charge bias during ion formation and repeat ion formation to support a second closed drift ion source ...

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Номер записи: 40
29-01-2015 дата публикации

FACING TARGET SPUTTERING APPARATUS

Номер: US20150027883A1
Автор: Kim Hun, Kim Ou-Hyen, Lee Sun-Jin, Park Jin-Woo
Принадлежит:

A sputtering apparatus includes a plurality of targets arranged to face each other and a magnetic unit producing magnetic field. A space between the targets is disposed on a substrate on which a deposition is being made during a sputtering process. The magnetic unit includes at least two magnet members. The space between the targets is surrounded by a space between the at least two magnet members. Each of the magnet members includes at least one first magnet and at least one second magnet separated from each other with an interval. 1. A sputtering apparatus comprising:a plurality of targets arranged to face each other; anda magnetic member producing a magnetic field that is to be formed in a space between the plurality of targets, the magnetic member comprising a bar magnet and a cylindrical magnet.2. The sputtering apparatus of claim 1 , wherein the magnetic member has a shape of a polygonal frame claim 1 , and the bar magnet is arranged along each side of the polygonal frame and the cylindrical magnet is arranged at a vertex between the sides of the polygonal frame.3. The sputtering apparatus of claim 1 , wherein the magnetic member has a shape of a rectangular frame claim 1 , and the bar magnet is arranged along each of four sides of the rectangular frame and the cylindrical magnet is arranged at each of four vertices of the rectangular frame.4. The sputtering apparatus of claim 1 , wherein the bar magnet and the cylindrical magnet are separated from each other with an interval.5. The sputtering apparatus of claim 1 , wherein the magnetic member is arranged behind each of the plurality of targets facing each other.6. The sputtering apparatus of claim 5 , wherein the bar magnet and the cylindrical magnet are arranged surrounding an outer side of each of the plurality of the targets.7. The sputtering apparatus of claim 1 , wherein claim 1 , the magnetic member is arranges in a manner that when plasma is formed between the plurality of the targets claim 1 , ...

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Номер записи: 41
23-01-2020 дата публикации

PRE-CONDITIONED CHAMBER COMPONENTS

Номер: US20200024725A1
Автор: LU William M., SUN Lizhong, WEST Brian T.
Принадлежит:

Embodiments of the disclosure generally relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A film is provided on a portion of the features. The film includes a porosity of about 2% to about 3.5%. 1. A process kit for a plasma processing chamber , comprising: an array of features formed in a surface of the body that is exposed to a plasma when in use in the processing chamber, the features having an opening in the surface;', 'the features having a profile, the profile having a geometric centerline extending away from the top of the body through the opening, the geometric centerline forming an obtuse angle with the vertical centerline of the body; and', 'a film formed on portions of the features, wherein the film includes a porosity of about 2% to about 3.5%., 'a conductive body having an orientation when the body is in use in the processing chamber that defines a top of the body and a vertical centerline, the body having2. The process kit of claim 1 , wherein the features further comprise:an overhanging portion defined on a side of the opening closest the top of the body, wherein a greater portion of the profile resides above an imaginary line extending perpendicularly through the vertical centerline and intersecting a tip of the overhanging portion.3. The process kit of claim 1 , wherein the conductive body is one of a deposition ring claim 1 , a cover ring claim 1 , or a cylindrical shield.4. The process kit of claim 1 , wherein the film is comprised of a dielectric material.5. The process kit of claim 1 , wherein the conductive body is configured as ...

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Номер записи: 42
29-01-2015 дата публикации

Organic light emitting display apparatus using facing target sputtering apparatus and method of manufacturing the organic light emitting display apparatus

Номер: US20150028295A1
Автор: Su-Hyuk Choi
Принадлежит: Samsung Display Co Ltd

A method of manufacturing an organic light-emitting display apparatus includes preparing a deposition target in which an organic light-emitting portion is formed on a substrate, forming a pre-encapsulation layer for encapsulating the organic light-emitting portion by using a facing target sputtering apparatus, and forming an encapsulation layer by performing a plasma surface process on the pre-encapsulation layer by using the facing target sputtering apparatus. The facing target sputtering apparatus includes a chamber in which a mounting portion for accommodating the deposition target is provided, a gas supply portion facing the mounting portion and supplying gas to the chamber, a first target portion and a second target portion disposed in the chamber and facing each other, and an induced magnetic field coil surrounding the exterior of the chamber.

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Номер записи: 43
23-01-2020 дата публикации

Sputtering device

Номер: US20200027708A1
Автор: Daisuke Matsuo, Shigeaki Kishida
Принадлежит: Nissin Electric Co Ltd

The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2 ; target holding parts 4 for holding the targets T inside the vacuum chamber 2 ; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

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Номер записи: 44
28-01-2021 дата публикации

PULSED DC SPUTTERING SYSTEMS AND METHODS

Номер: US20210027998A1
Автор: Andosca, CHRISTIE David, Pelleymounter Douglas R., Ph.D. Robert George
Принадлежит:

Systems and methods for are disclosed. One method includes providing at least a first electrode, a second electrode, and a third electrode and using each of at least two, separate and different, target materials in connection with the three electrodes to enable sputtering. The method also includes applying a first voltage at the first electrode that alternates between positive and negative relative to the second electrode during each of multiple cycles and applying a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles. 1. A pulsed sputtering system comprising:first electrode, a second electrode, and a third electrode;at least two, separate and different, target materials, each of the target materials coupled to a corresponding one of the electrodes;a first power source coupled to the first electrode and the second electrode, wherein the first power source is configured to apply a first voltage at the first electrode that alternates between positive and negative relative to the second electrode during each of multiple cycles; anda second power source coupled to the third electrode and the second electrode, the second power source is configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles.2. The pulsed sputtering system of claim 1 , wherein the first electrode and the third electrode are each a part of a magnetron to form a first magnetron and a third magnetron wherein each of the first magnetron and the third magnetron is coupled to a corresponding one of the two separate and different target materials claim 1 , and wherein the second electrode is neither coupled to a target nor a part of a magnetron to operate as an anode.3. The pulsed sputtering system of claim 1 , wherein each of the three electrodes is a part of a magnetron to form a first magnetron ...

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Номер записи: 45
02-02-2017 дата публикации

HIGH POWER PULSE IONIZED PHYSICAL VAPOR DEPOSITION

Номер: US20170029936A1
Автор: Chistyakov Roman
Принадлежит: Zond, Inc.

Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-Ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target. 130-. (canceled)31. A method of magnetron sputtering , the method comprising:a) supplying feed gas to a vacuum chamber comprising a magnetron and substrate holder, the magnetron comprising a rotating magnet assembly, an anode, and sputtering target cathode;b) generating an unbalanced magnetic field with the rotating magnet assembly;c) generating a negative voltage pulse having a pulse voltage rise time and duration between the anode and the sputtering target cathode, the negative pulse having a high voltage level portion and a low voltage level portion, the negative voltage pulse low voltage level portion creating a weakly-ionized plasma and the high voltage level portion creating a strongly-ionized plasma from the weakly-ionized plasma during a duration of the negative voltage pulse while providing suppression breakdown conditions between the anode and the cathode assembly by controlling the high voltage level portion rise time and duration;d) positioning an additional magnet assembly to direct sputtered target material to the substrate during the pulse; ande) applying an RF bias voltage to the substrate holder, thereby attracting sputtered target material ions to the substrate.32. The method of further comprising ...

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Номер записи: 46
02-02-2017 дата публикации

Method of coating high aspect ratio features

Номер: US20170029937A1
Автор: Bassam Hanna Abraham, Roman Chistyakov
Принадлежит: Zond LLC

A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode inside the chamber. A magnet is positioned adjacent to cathode assembly. A platen that supports a substrate is positioned adjacent to the cathode assembly. An output of the power supply is electrically connected to the cathode assembly. The power supply generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge from the feed gas that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

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Номер записи: 47
02-02-2017 дата публикации

Sputter System for Uniform Sputtering

Номер: US20170029940A1
Автор: De Bosscher Wilmert, DEWILDE Niek, GOBIN Guy, VAN DE PUTTE Ivan
Принадлежит:

A sputter system for applying a coating on a substrate is described. The sputter system comprises at least two cylindrical sputter units for the joint sputtering of a single coating. Each sputter unit comprising an elongated magnet configuration and at least one elongated magnet configuration comprising a plurality of magnet structures and magnet structure control systems along the length direction of the elongated magnet configuration. At least one magnet structure is adjustable in position and/or shape by a magnet structure control system, while a sputter target is mounted on the sputter unit. 122-. (canceled)23. A sputter system for applying a coating on a substrate , the sputter system comprising:a substrate holder, upon which a substrate can be positioned, in such a way that the substrate is substantially stationary during the application of the coating;at least two cylindrical sputter units for the joint sputtering of a coating, each sputter unit comprising an elongated sputter magnet configuration;wherein at least one elongated magnet configuration comprises a plurality of magnet structures and magnet structure control systems along the length direction of the elongated magnet configuration, wherein at least one magnet structure is adjustable in position and/or shape by a magnet structure control system, while a sputter target is mounted on the sputter unit, in order to influence the homogeneity of the sputtered coating on the substrate.24. A sputter system according to claim 23 , wherein at least part of the elongated magnet configurations comprises a plurality of magnet structures and magnet structure control systems along the length direction of the elongated magnet configurations claim 23 , whereby a part of the magnet structure is remotely adjustable in position and/or shape by a magnet structure control system.25. A sputter system according to claim 23 , wherein the cylindrical sputter units are oriented substantially parallel with respect to each other ...

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Номер записи: 48
02-02-2017 дата публикации

HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS

Номер: US20170029941A1
Автор: ALLEN ADOLPH MILLER, Chang Mei, Cox Michael S., Gandikota Srinivas, GE ZHENBIN, GUNG TZA-JING, HAWRYLCHAK LARA, Liu Zhendong, Rasheed Muhammad M., SAVANDAIAH Kirankumar, TANG XIANMIN, Wang Rongjun, Xie Zhigang, YOUNG DONNY
Принадлежит:

Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber. 1. A plasma processing chamber , comprising:a target having a first surface that is in contact with a processing region and a second surface that is opposite the first surface;an RF power supply coupled to the target;a DC power supply coupled to the target;a substrate support having a substrate receiving surface; and{'sub': 1', '2', '1', '2, 'a center feed that is electrically coupled to the target, wherein the center feed includes a length (A), an inner diameter (D), and an outer diameter (D), wherein a surface area aspect ratio of the center feed is between about 0.001/mm and about 0.025/mm, wherein the surface area aspect ratio is calculated by A/(πDA+πDA).'}2. The plasma processing chamber of claim 1 , further comprising a magnetron disposed adjacent to the second surface of the target claim 1 , wherein the magnetron comprises:an outer pole comprising a plurality of magnets; andan inner pole comprising a plurality of magnets.3. The plasma ...

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Номер записи: 49
05-02-2015 дата публикации

Deposition of thick magnetizable films for magnetic devices

Номер: US20150034476A1
Автор: Frank M. Cerio, Robert Gabriel Hieronymi
Принадлежит: Veeco Instruments Inc

A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.

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Номер записи: 50
02-02-2017 дата публикации

INTEGRATED ANODE AND ACTIVATED REACTIVE GAS SOURCE FOR USE IN A MAGNETRON SPUTTERING DEVICE

Номер: US20170032946A1
Автор: OCKENFUSS Georg J.
Принадлежит: VIAVI SOLUTIONS INC.

The invention relates to an integrated anode and activated reactive gas source for use in a magnetron sputtering device and a magnetron sputtering device incorporating the same. The integrated anode and activated reactive gas source comprises a vessel having an interior conductive surface, comprising the anode, and an insulated outer body isolated from the chamber walls of the coating chamber. The vessel has a single opening with a circumference smaller that that of the vessel in communication with the coating chamber. Sputtering gas and reactive gas are coupled through an input into the vessel and through the single opening into the coating chamber. A plasma is ignited by the high density of electrons coming from the cathode and returning to the power supply through the anode. A relatively low anode voltage is sufficient to maintain a plasma of activated reactive gas to form stoichiometric dielectric coatings. 123-. (canceled)24. An integrated anode and activated reactive gas source , comprising a vessel including:an interior conductive surface of the vessel, electrically coupled to a positive output of a power supply, comprising the anode such that the anode is the preferred return path for electrons, an insulated outer surface of the vessel electrically isolated from the chamber walls;a single opening in communication with the coating chamber;a sputtering gas source coupled into the vessel; anda reactive gas source; andwherein the interior conductive surface is electrically insulated from the chamber walls by an insulating material.25. The integrated anode and activated reactive gas source defined in claim 24 , wherein the single opening is smaller than a circumference of the vessel to shield the interior conductive surface from most sputtered material.26. The integrated anode and activated reactive gas source defined in claim 24 , wherein the single opening is dimensioned to raise the pressure locally within the vessel higher than a pressure in the coating ...

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Номер записи: 51
31-01-2019 дата публикации

CATHODE FOR PLASMA TREATMENT APPARATUS

Номер: US20190032197A1
Автор: LEE Chan Yong, LEE Sang Yong
Принадлежит:

The present invention relates to a cathode for generating plasma so as to perform predetermined treatment for a material to be treated and, more specifically, to a cathode being capable of generating plasma in all directions in a range of 360° around the cathode. The present invention comprises: an electrode tube which is made from a conductive material and of which the inside is hollow; and a plurality of magnets provided inside the electrode tube, and aligned such that the same poles thereof face each other. 1. A cathode for a plasma treatment device , the cathode comprising:an electrode pipe formed of a conductive material to have a hollow center; anda plurality of magnets provided inside of the electrode pipe to be arranged to face same poles each other.2. The cathode according to claim 1 , wherein a through hole is formed at a center the magnets claim 1 , and the magnets arranged to generate a repulsive force against each other are fixed by a magnet fixing shaft passing through the through hole.3. The cathode according to claim 1 , wherein plasma of a donut shape is formed around the magnets.4. The cathode according to claim 1 , further comprising a moving means for moving the magnets to reciprocate.5. The cathode according to claim 4 , wherein the moving means moves the magnets to reciprocate at a stroke the same as a thickness of the magnet.6. A sputter cathode provided to generate plasma in a sputtering apparatus claim 4 , the sputter cathode comprising:an electrode pipe formed of a conductive material to have a hollow center;a plurality of magnets provided inside of the electrode pipe to be arranged to face same poles each other; anda target formed of a target material, in which the electrode pipe is installed.7. The sputter cathode according to claim 6 , further comprising a moving means for moving either the magnets or the target to reciprocate to uniformly consume the target.8. The sputter cathode according to claim 6 , wherein a through hole is formed ...

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Номер записи: 52
04-02-2016 дата публикации

HELMHOLTZ COIL ASSISTED PECVD CARBON SOURCE

Номер: US20160035546A1
Автор: Fan Zhaohui, Greenberg Thomas Larson, Ma Xiaoding, Platt Christopher Loren, Tanaka Samuel Lewis, Tong Chun Wai Joseph
Принадлежит:

The embodiments disclose an apparatus including at least two carbon source deposition tools for emitting electrons, at least two reflective polarity rear button permanent magnets integrated into the carbon source deposition tools for reflecting emitted electrons, and at least two paired polarity Helmholtz coils integrated into the carbon source deposition tools for forming uniform parallel magnetic field lines for confining the emitted electrons to uniformly deposit carbon onto the surfaces of a two-sided media disk. 1. An apparatus , comprising:at least two carbon source deposition tools for emitting electrons; andat least two paired polarity Helmholtz coils integrated into the carbon source deposition tools configured to form uniform parallel magnetic field lines for confining the emitted electrons to uniformly deposit carbon onto the surfaces of a two-sided media disk.2. The apparatus of claim 1 , further comprising a first paired polarity Helmholtz coil integrated into a first carbon source deposition tool.3. The apparatus of claim 1 , further comprising a second paired polarity Helmholtz coil integrated into a second carbon source deposition tool.4. The apparatus of claim 1 , further comprising a first electric current configured to connect to a first paired polarity Helmholtz coil and configured to form a first paired polarity Helmholtz coil current flow direction.5. The apparatus of claim 1 , further comprising a second electric current configured to connect to a second paired polarity Helmholtz coil and configured to form a second paired polarity Helmholtz coil current flow direction.6. The apparatus of claim 1 , further comprising a first and second paired polarity Helmholtz coil integrated into a first and second carbon source deposition tool configured to produce first and second uniform parallel magnetic field lines to confine and concentrate first and second emitted electrons into a deposition chamber.7. The apparatus of claim 1 , further comprising a ...

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Номер записи: 53
04-02-2016 дата публикации

MAGNETRON ASSEMBLY FOR PHYSICAL VAPOR DEPOSITION CHAMBER

Номер: US20160035547A1
Автор: ALLEN ADOLPH MILLER, Datta Brij, JOHANSON William, Kothnur Prashanth, LIU YU Y., Zhang Fuhong
Принадлежит:

Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis and rotatable about the central axis, a closed loop magnetic pole coupled to a first surface of the shunt plate and disposed 360 degrees along a peripheral edge of the shunt plate, and an open loop magnetic pole coupled at a the first surface of the shunt plate wherein the open loop magnetic pole comprises two rows of magnets disposed about the central axis. 1. A magnetron assembly , comprising:a shunt plate having a central axis and rotatable about the central axis;a closed loop magnetic pole coupled to a first surface of the shunt plate and disposed 360 degrees along a peripheral edge of the shunt plate; andan open loop magnetic pole coupled at a the first surface of the shunt plate wherein the open loop magnetic pole comprises two rows of magnets disposed about the central axis.2. The magnetron assembly of claim 1 , wherein a first polarity of a first of the two rows of magnets opposes a second polarity of a second of the two rows of magnets.3. The magnetron assembly of claim 1 , wherein each of the two rows of magnets includes a pole piece and a plurality of magnets disposed between the pole piece and the shunt plate.4. The magnetron assembly of claim 1 , wherein a distance between the two rows of magnets is about 0.5 inches to about 2 inches.5. The magnetron assembly of claim 1 , wherein the closed loop magnetic pole is formed by an inner concentric ring of magnets and an outer concentric ring of magnets.6. The magnetron assembly of claim 5 , wherein a first polarity of the inner concentric ring of magnets opposes a second polarity of the outer concentric ring of magnets.7. The magnetron assembly of claim 5 , wherein each of the inner concentric ring of magnets and the outer concentric ring of magnets is disposed axisymmetric about the central axis of the shunt plate.8. The magnetron assembly of claim 5 , ...

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Номер записи: 54
01-02-2018 дата публикации

SPUTTERING APPARATUS INCLUDING GAS DISTRIBUTION SYSTEM

Номер: US20180033595A1
Автор: Hartig Klaus
Принадлежит:

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight. 1. A method of using a magnetron sputtering apparatus that comprises a vacuum chamber having a controlled environment , the magnetron sputtering apparatus including a target comprising one or more sputterable materials , wherein the target includes a sputtering zone that is racetrack shaped and extends longitudinally along a longitudinal axis , the sputtering zone including two straightaway areas sandwiched between first and second turnaround areas , the magnetron sputtering apparatus further including a gas distribution system comprising a plurality of interfaces located along the longitudinal axis , wherein the plurality of interfaces comprises a plurality of first interfaces and a plurality of second interfaces , the first interfaces positioned at each of the first and second turnaround areas to supply a first gas mixture to both of the first and second turnaround areas , such that the first gas mixture controls sputtering rate at localized areas of both of the first and second turnaround areas , whereas the second interfaces are positioned at each ...

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Номер записи: 55
31-01-2019 дата публикации

SYSTEMS AND METHODS FOR UNIFORM TARGET EROSION MAGNETIC ASSEMBLIES

Номер: US20190035611A1
Автор: CHENG Wen-Cheng, CHUNG Chen-Fang, HE Ming-Jie, LO Szu-Hsien, Tsai Tsez-Chong, TSENG Shuen-Liang, YANG Shawn
Принадлежит:

In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber. 1. A system , comprising:a chamber; and an inner magnetic portion comprising first magnets; and', at least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and', 'the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber., 'an outer magnetic portion comprising second magnets, wherein], 'a magnetic assembly contained within the chamber, the magnetic assembly comprising2. The system of claim 1 , further comprising a target disposed within the target region claim 1 , wherein the magnetic assembly is configured to rotate around the axis to generate the electromagnetic field with the ions that sputters the target.3. The system of claim 2 , wherein the electromagnetic field is configured to erode the target along an even gradient over time that avoids target puncture.4. The system of claim 2 , wherein the electromagnetic field is configured to sputter the target without a peak or trough along a surface of the target.5. The system of claim 2 , wherein the inner magnetic portion and the outer magnetic portion is connected by a shunt plate and wherein the first magnets are disposed between the shunt plate and an inner plate.6. The system of claim 5 , wherein the second magnets are disposed between the shunt plate and an outer plate separate from the inner plate.7. The system of claim 1 , wherein the ...

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Номер записи: 56
11-02-2016 дата публикации

Multilayer solar selective coating for high temperature solar thermal applications

Номер: US20160040912A1
Автор: Barshilia Harish Chandra
Принадлежит: Council of Scientific and Industrial Research CSIR

A multilayer solar selective coating on metallic and non-metallic substrates suitable for high temperature solar thermal power applications. The optimized solar selective coating of the present invention on stainless steel substrate exhibits absorptance of 0.954 and emittance of 0.07. A five layer coating is deposited using the sputtering process, and includes tungsten (W), titanium aluminum nitride (TiAlN), titanium aluminum silicon nitride (TiAlSiN), titanium aluminum silicon oxy-nitride (TiAlSiON), and titanium aluminum silicon oxide (TiAlSiO) layers. The first layer (W) acts an infrared reflector, the second layer (TiAlN), the third layer (TiAlSiN) and the fourth layer (TiAlSiON) act as the absorber layer and the fifth layer (TiAlSiO) acts as the anti-reflection layer. The high-temperature solar selective coating exhibits average emittance of 0.10 at 400° C. on stainless steel substrate in the wavelength range of 2.5-25 μm, thus is suitable for applications in concentrating collectors like evacuated receiver tubes for solar thermal power generation.

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Номер записи: 57
08-02-2018 дата публикации

ENDBLOCK FOR ROTATABLE TARGET WITH ELECTRICAL CONNECTION BETWEEN COLLECTOR AND ROTOR AT PRESSURE LESS THAN ATMOSPHERIC PRESSURE

Номер: US20180037984A1
Автор: COMANS Guy, GALAN Gilbert, Schloremberg Marcel, USELDING Jean-Philippe
Принадлежит:

An endblock for a rotatable sputtering target, such as a rotatable magnetron sputtering target, is provided. A sputtering apparatus, including one or more such endblock(s), includes locating the electrical contact(s) (e.g., brush(es)) between the collector and rotor in the endblock(s) in an area under vacuum (as opposed to in an area at atmospheric pressure). 118-. (canceled)19. A method of making a coated article , the method comprising:sputtering a rotating target in a chamber at pressure less than atmospheric pressure to sputter-deposit a layer on a substrate, wherein the target is supported by an endblock, the endblock including a fixed conductive collector, a rotatable conductive rotor rotating with the sputtering target during said sputtering, an electrical power transfer structure located between the fixed conductive collector and the rotatable rotor for transferring electrical power from the collector to the rotor,providing the endblock in a position, so that during said sputtering the electrical power transfer structure, the rotor, and the collector are each located in the area under vacuum having pressure less than atmospheric pressure. Example embodiments of this invention relate to an endblock for a rotatable sputtering target such as a rotatable magnetron sputtering target. A sputtering apparatus design, including an endblock design, includes locating the electrical contact(s) (e.g., brush(es)) between the collector and rotor in an area under vacuum (as opposed to in an area at atmospheric pressure) which has been found to provide for significant advantages.Sputtering is known in the art as a technique for depositing layers or coatings onto substrates such as glass substrates. For example, a low-emissivity (low-E) coating can be deposited onto a glass substrate by successively sputter-depositing a plurality of different layers onto the substrate. As an example, a low-E coating may include the following layers in this order: glass substrate/SnO/ZnO/Ag/ ...

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Номер записи: 58
11-02-2016 дата публикации

SPUTTERING APPARATUS

Номер: US20160042928A1
Автор: HIGASHISAKA Ryuji, Yamada Satoshi
Принадлежит: CANON ANELVA CORPORATION

A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit. 1. A sputtering apparatus comprising:a vacuum chamber;a substrate holder configured to arrange a substrate at a predetermined position in the vacuum chamber;a target support member configured to arrange a target so as to make the target face the substrate arranged by the substrate holder;a cathode magnet arranged on a side of the target support member, which is opposite to a side of the substrate;a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member;a target moving unit configured to adjust a distance between the target support member and the substrate; anda control unit configured to control the target moving unit and the magnet moving unit.2. The sputtering apparatus according to claim 1 , wherein the control unit adjusts a distance between the cathode magnet and the target support member in accordance with a change in power value applied to the target support member.3. The apparatus according to claim 1 , wherein the control unit adjusts a distance between the target support member and the substrate in accordance with integrated power applied to the target support member.4. The sputtering apparatus according to claim 1 , the control unit adjusts a distance between the target support member and the substrate in accordance with a distance between the cathode magnet and the target support member.5. The sputtering apparatus according to claim 1 , further comprising a magnet ...

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Номер записи: 59
09-02-2017 дата публикации

ROLL-TO-ROLL HYBRID PLASMA MODULAR COATING SYSTEM

Номер: US20170040150A1
Автор: Ai Chi-Fong, Chen Jiun-Shen, Hsieh Cheng-Chang, Lin Deng-Lain, Tsai Wen-Fa, Tseng Ching-Pei
Принадлежит:

The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material. 1. A roll-to-roll hybrid plasma modular coating system , comprising:at least one arc plasma processing unit, each formed with a first chamber and an arc plasma source for producing arc plasma that is housed inside the first chamber;at least one magnetron sputtering plasma processing unit, each formed with a second chamber and a magnetron sputtering plasma source for producing magnetron sputtering plasma that is housed inside the second chamber;a metallic film, disposed in the arc plasma processing unit to avoid deposition of target material on a wall in the deposition chamber; andat least one substrate feeding unit, for feeding a substrate, formed with a third chamber;whereas the at least one arc plasma processing unit, the at least one magnetron sputtering plasma processing unit and the at least one substrate feeding unit are connected in series to be used for depositing at least one thin layer by arc plasma deposition or at least one thin layer by magnetron sputtering plasma on a web substrate during the feeding of the web substrate.2. The roll-to-roll hybrid plasma modular ...

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Номер записи: 60
19-02-2015 дата публикации

PLASMA PROCESSING APPARATUS AND HIGH FREQUENCY GENERATOR

Номер: US20150047974A1
Автор: Funazaki Kazunori, KANEKO Kazushi, KATO Hideo
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus () is provided with: a processing container (), in which processing is performed using plasma; a plasma generating mechanism (), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (), and which generates plasma in the processing container () using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism. 1. A plasma processing apparatus which processes an object to be processed using plasma , the plasma processing apparatus comprising:a processing container within which a plasma processing is performed;a plasma generating mechanism including a high frequency generator which includes a high frequency oscillator disposed outside the processing container to oscillate a high frequency wave, the plasma generating mechanism being configured to generate the plasma within the processing container using the high frequency wave generated by the high frequency generator;a determining mechanism configured to determine a state of the high frequency oscillator; anda notifying mechanism configured to perform notification of a determination result made by the determining mechanism.2. The plasma processing apparatus of claim 1 , wherein the determining mechanism includes a first determining section configured to determine the state of the high frequency oscillator based on a fundamental frequency component and a different frequency component which are oscillated from the high frequency oscillator.3. The plasma processing apparatus of claim 2 , wherein the first determining section includes a spectrum level detecting section configured to detect a spectrum level of the fundamental frequency component ...

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Номер записи: 61
19-02-2015 дата публикации

SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES

Номер: US20150047975A1
Автор: Cox Michael S., OH JEONGHOON, WEST Brian T.
Принадлежит:

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate. 1. A sputtering target for a sputtering chamber , the sputtering target comprising: a plurality of circular grooves which are spaced apart from one another; and', 'at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of the sputtering plate; and, 'a sputtering plate with a backside surface having radially inner, middle and outer regions, the backside surface havingan annular-shaped backing plate mounted to the sputtering plate, wherein the annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.2. The sputtering target of claim 1 , wherein the circular grooves are concentric grooves.3. The sputtering target of claim 2 , wherein the circular grooves comprises from about 20 to about 30 grooves.4. The sputtering target of claim 1 , wherein all of the circular grooves are located at the radially middle region of the backside surface.5. The sputtering target of claim 1 , wherein the backside surface has at least 8 arcuate channels.6. The sputtering target of claim 5 , wherein the arcuate channels are spaced apart from one another by an angle of from about 30 to about 90 degrees ...

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Номер записи: 62
16-02-2017 дата публикации

MAGNETRON SPUTTERING DEVICE AND METHOD USING THE SAME

Номер: US20170044659A1
Автор: Niu Ben, Sun Jianming, Wang Zhi, Zhou Xiang
Принадлежит:

The present invention relates to a magnetron sputtering device, which comprises at least two targets, each of which is used for placing a target material for sputtering a film forming area of a same substrate; and magnetic field generating devices corresponding to the targets respectively and used for generating magnetic fields for controlling the directions of target sputtering particles. The magnetron sputtering device comprises at least two targets, and the target materials of the at least two targets are different from each other in composition, so that the purpose of doping different elements can be achieved by adjusting the proportion of the two target materials; by controlling the magnetic fields generated by the magnetic field generating devices, the sputtering speed and direction of the target materials can be controlled. The present invention also relates to a method for forming a film on a substrate by magnetron sputtering. 1. A magnetron sputtering device , including:at least two targets, each of which is used for placing a target material for sputtering a film forming area of a same substrate; andmagnetic field generating devices corresponding to each of the targets respectively and used for generating magnetic fields for controlling the directions of target sputtering particles.2. The magnetron sputtering device of claim 1 , wherein the magnetic fields are variable magnetic fields claim 1 , and are achieved by moving the magnetic field generating devices.3. The magnetron sputtering device of claim 2 , wherein the magnetic fields are scanning magnetic fields.4. The magnetron sputtering device of claim 1 , wherein the target materials of the at least two targets are different from each other in material composition.5. The magnetron sputtering device of claim 1 , wherein it further includes rotating devices connected with the respective targets claim 1 , which are used for driving the targets to change the angles facing the substrate claim 1 , thus ...

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Номер записи: 63
15-02-2018 дата публикации

SPUTTERING TARGET HAVING REVERSE BOWNG TARGET GEOMETRY

Номер: US20180044778A1
Автор: BAILEY Robert S., Holcomb Melvin Kirk, Leybovich Alexander, Yan Junhai
Принадлежит:

Generally planar sputter targets having a reverse bow surface (i.e., convexity) facing the magnets in a magnetron assembly is provided. Methods of making Cu and Cu alloy targets are provided including an annealing step performed at temperatures of from 1100-1300 F for a period of about 1-2 hours. Targets made by the methods have increased grain sizes on the order of 30-90 microns. 1. A generally planar sputter target that has an initial reverse bow in the form of a convex surface exhibiting a percent bowing of greater than 0.04% , said reverse bow adapted for continued bowing during sputtering.2. A sputter target as recited in wherein said percent bowing is between about 0.04%-0.25%.3. A sputter target as recited in composed of Cu claim 1 , Al claim 1 , Ti claim 1 , or Ta claim 1 , or alloys of these elements.4. A sputter target as recited in wherein said sputter target comprises Cu or Cu alloy claim 3 , and wherein said sputter target is a monolithic sputter target.5. A sputter target as recited in in combination with a backing plate claim 3 , said sputter target and said backing plate bonded together via a mechanical interlocking bond.6. A sputter target adapted for reception in a sputtering chamber of the type having a substrate that is to be coated with material sputtered from said target claim 3 , and a magnet source proximate said target for producing a magnetic field within said chamber claim 3 , said sputter target having a sputter surface from which said material is sputtered onto said substrate and an opposing surface proximate said magnet source claim 3 , said opposing surface comprising a convex surface facing said magnet source.7. A sputter target as recited in wherein said target is a generally planar monolithic target.8. A sputter target as recited in wherein said sputter surface of said target comprises a generally concave shape.9. A sputter target as recited in wherein said convex surface has a percent bowing of greater than 0.04%.10. A sputter ...

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Номер записи: 64
15-02-2018 дата публикации

APPARATUS AND METHOD FOR SPUTTERING HARD COATINGS

Номер: US20180044780A1
Автор: Abraham Bassam Hanna, Chistyakov Roman
Принадлежит: ZOND, LLC

A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma. 113-. (canceled)14. A pulsed arc power supply comprising:a voltage source that generates a voltage at an output;an energy storage device that is electrically connected to the voltage source, the voltage source charging the energy storage device to store an energy;a switching device that is electrically connected to energy storage device, the switching device releasing the energy stored in the energy storage device when activated in the form of micro pulses;a transformer comprising a primary coil that is electrically coupled to the switching device and a secondary coil, the primary coil receiving the energy stored in the energy storage device when the switch is activated and transforming the received energy to the secondary coil in order to generate voltage oscillation where the micro pulses correspond to the voltage oscillation;a driving circuit that is electrically connected to the diodes, the driving circuit forming the shape of the voltage oscillations; andthe voltage oscillations generate and sustain arc discharge on the cathode.15. The pulsed arc power supply of claim 14 , including arc control circuit including an arc detection means that detects the onset of an arc discharge.16. The pulsed arc power supply of claim 15 , wherein the arc detection means sends a signal to a control device that deactivates drivers for the switching device for a period of time claim 15 , thereby reducing the ...

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Номер записи: 65
19-02-2015 дата публикации

ENCAPSULATED MAGNETRON

Номер: US20150048735A1
Автор: Cox Michael S., JOHNSON Roger M., WEST Brian T.
Принадлежит:

Embodiments of the present invention generally provide a magnetron that is encapsulated by a material that is tolerant of heat and water. In one embodiment, the entire magnetron is encapsulated. In another embodiment, the magnetron includes magnetic pole pieces, and the magnetic pole pieces are not covered by the encapsulating material. 1. A magnetron , comprising:a plurality of magnets, wherein each of the plurality of magnets has a first end and a second end;a first magnetic pole piece, wherein the first magnetic pole piece is coupled to the first end of the magnets;a second magnetic pole piece, wherein the second magnetic pole piece is coupled to the second end of the magnets; anda first encapsulating material covering the plurality of magnets.2. The magnetron of claim 1 , wherein the first encapsulating material is coupled to the first magnetic pole piece.3. The magnetron of claim 1 , wherein the first encapsulating material is selected from at least one of epoxies claim 1 , urethanes claim 1 , and rubber.4. The magnetron of claim 1 , wherein the second magnetic pole piece is surrounded by the first magnetic pole piece.5. The magnetron of claim 4 , wherein a gap is formed between the first magnetic pole piece and a second magnetic pole piece claim 4 , and a second encapsulating material is covering the gap.6. The magnetron of claim 5 , wherein the second encapsulating material comprises a same material as the first encapsulating material.7. The magnetron of claim 5 , further comprising a plurality of ridges disposed on the second encapsulating material.8. The magnetron of claim 7 , wherein the plurality of ridges are made of a same material as the first encapsulating material.9. A magnetron claim 7 , comprising:a plurality of magnets, wherein each of the plurality of magnets has a first end and a second end;a backing plate, wherein the backing plate is coupled to the first end of the magnets;a first magnetic pole piece, wherein the first magnetic pole piece is ...

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Номер записи: 66
07-02-2019 дата публикации

Inverted magnetron for processing of thin film materials

Номер: US20190043701A1
Автор: Quang N. Tran, Samuel D. Harkness, IV
Принадлежит: Hia Inc

A magnet pack has a permeable assembly with a first cutout for a center magnet and second cutouts for peripheral magnets surrounding the center magnet. A target is attached to the permeable assembly. A heatsink is attached to the target. Emanating magnetic fields from the magnet pack progress from an inner atmospheric side to a position substantially within a vacuum cavity. The emanating magnetic fields from the center magnet are substantially stronger than the emanating magnetic fields from the peripheral magnets.

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Номер записи: 67
06-02-2020 дата публикации

METHOD AND DEVICE FOR PROCESSING A SURFACE OF A SUBSTRATE BY MEANS OF A PARTICLE BEAM

Номер: US20200043699A1
Автор: Demmler Marcel, Dunger Thoralf, Nestler Matthias, Schulze Carsten, Tonert Thomas, Zeuner Michael
Принадлежит: SCIA SYSTEMS GMBH

This invention relates to a method and a device for processing a surface of a substrate by means of a particle beam. The method comprises the irradiation of the surface of the substrate, wherein, in a first area of the surface of the substrate, the surface of the substrate is processed with the particle beam, which strikes the surface of the substrate in an unpulsed manner; and wherein, in a second area of the surface of the substrate, the surface of the substrate is processed with the particle beam, which strikes the surface of the substrate in a pulsed manner. 1. A method for processing a surface of a substrate using a particle beam , the method comprising: wherein, in a first area of the surface of the substrate, the surface of the substrate is processed with the particle beam which strikes the surface of the substrate in an unpulsed manner; and', 'wherein in at least a second area of the surface of the substrate, the surface of the substrate is processed with the particle beam which strikes the surface of the substrate in a pulsed manner., 'irradiating the surface of the substrate with the particle beam,'}2. A method for processing a surface of a substrate using a particle beam , the method comprising: wherein, in a first area of the surface of the substrate, the surface of the substrate is processed with the particle beam, which, pulsed with a first duty cycle, strikes the surface of the substrate; and', 'wherein in at least a second area of the surface of the substrate, the surface of the substrate is processed with the particle beam with a second duty cycle in a pulsed manner, wherein the second duty cycle is different from the first duty cycle., 'irradiating the surface of the substrate with the particle beam,'}3. The method according to claim 1 , further comprising determining a number of pulsed and unpulsed processes for each surface area to be processed.4. The method according to claim 3 , wherein the determining the number of pulsed processes comprises ...

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Номер записи: 68
18-02-2021 дата публикации

MAGNETRON SPUTTERING DEVICE

Номер: US20210050192A1
Автор: Gaedike Bastian
Принадлежит:

A magnetron sputtering device comprising a substrate; a target which forms a cathode in a DC electric field and comprises an electrically conductive mixture for coating the substrate; an anode in the DC electric field; a reaction chamber in which the target and the substrate are arranged. The target is spaced apart from the substrate. The voltage source is configured to generate the DC electric field between the cathode and the anode. The mixture comprises a first material and a second material. The substrate comprises a third material. The first material is an electrically non-conductive solid. The second material is an electrically conductive solid. The third material is an electrically conductive solid. 1. A magnetron sputtering device comprising:a substrate;a sintered or hot-pressed target which forms a cathode in a DC electric field and comprises an electrically conductive mixture for coating the substrate;an anode in the DC electric field;a reaction chamber in which the target and the substrate are arranged, wherein the target is arranged spaced apart from the substrate; anda voltage source configured to generate the DC electric field between the cathode and the anode;wherein the mixture comprises a first material and a second material, wherein the first material is an electrically non-conductive solid, and wherein the second material is an electrically conductive solid selected from the group consisting of a boride, a carbide, a nitride, and mixtures thereof; andwherein the substrate comprises a third material which is an electrically conductive solid.2. The magnetron sputtering device according to claim 1 , wherein the first material has a first volumetric portion ΔVand the second material has a second volumetric portion ΔV claim 1 , wherein it applies: ΔV≥ΔV claim 1 , preferably ΔV≥1.5 ΔV.3. The magnetron sputtering device according to claim 1 , wherein the first material is a first inorganic solid.4. The magnetron sputtering device according to claim 1 , ...

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Номер записи: 69
18-02-2021 дата публикации

METHODS OF AND APPARATUS FOR MAGNETRON SPUTTERING

Номер: US20210050193A1
Автор: Bless Martin, Falub Claudiu Valentin, Rohrmann Hartmut
Принадлежит:

In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space. 167-. (canceled)68. A method of magnetron sputter-deposition or of manufacturing a substrate coated with a magnetron-sputter-deposited layer , comprising:{'b': 4', '40', '60', '1', '11', '9, 'providing in a vacuum enclosure (,,) a target of ferromagnetic material () having a sputter surface () and extending along a target plane ();'}{'b': 13', '15, 'providing a substrate () having a surface to be sputter coated () on a substrate holder;'}{'b': 11', '15, 'providing a reaction space (I) between said sputter surface () and said surface () to be sputter coated;'}{'sub': 'm', 'b': 20', '11', '22', '20', '11', '22', '1', '11, 'generating in said reaction space (I) a magnetron magnetic field (B), the magnetic field lines thereof, arcing between a first outer pole surface () of said sputter surface () and a first inner pole surface (), said first outer pole surface () forming a closed loop on said sputter surface () around said first inner pole surface (), seen in a direction (S) towards said sputter surface ();'}{'b': 32', '30, 'sub': 'a', 'generating in said reaction space (I)and between at least one second outer pole surface () and at least one second inner pole surface () located within said loop a further magnetic field (B);'}{'sub': m', 'a', 'r', 'r', 'm, 'b': 9', '9, 'generating in said reaction space (I), by superposition of said magnetron magnetic field (B), and said further magnetic field (B), a resultant magnetic field (B), the directional component of said resultant magnetic field (B), parallel to said target plane () at a locus in said reaction space (I) being larger than the directional component of said ...

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Номер записи: 70
18-02-2021 дата публикации

Heat-Transfer Roller for Sputtering and Method of Making the Same

Номер: US20210050196A1
Автор: Hiroshi Iwata, Ippei Sato, Keiichi Hashimoto, Naonori SHIBATA, Naoya Okada, Toshiyuki NEDU, Yuta TAKAKUWA
Принадлежит: Keihin Ramtech Co Ltd

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

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Номер записи: 71
16-02-2017 дата публикации

MAGNETRON PLASMA APPARATUS

Номер: US20170047204A1
Автор: BARANKOVA Hana, BARDOS Ladislav
Принадлежит:

A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas. 1. A magnetron plasma apparatus boosted by hollow cathode plasma for plasma processing on a substrate in a reactor , comprising a parallel plate hollow cathode with a slit wherein a hollow cathode effect can be excited , magnetron sputtering apparatus with a magnetron target , an electric power generator for generation of plasma and a magnetic system generating a magnetron magnetic field giving form to an erosion zone on the magnetron target surface and spatial shape of the magnetron plasma , whereinat least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm has an opening following an outer edge of a sputter erosion zone on magnetron target so that a magnetron magnetic field forms a perpendicular magnetic induction component inside a hollow cathode slit between said plates and;said pair of plates and is connected to a first electric power generator together with said target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in ...

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Номер записи: 72
16-02-2017 дата публикации

APPARATUS AND A METHOD FOR DEPOSITION OF MATERIAL TO FORM A COATING

Номер: US20170047205A1
Автор: Cooke Kevin, Sun Hailin, Teer Dennis, Teer Paul
Принадлежит:

Apparatus and a method for creation and maintenance of a closed field system in which magnetrons and/or magnet assemblies are provided in a form to create a magnetic field around an area in which a substrate to be coated is located. The method also relates to the steps of cleaning the substrates and applying an adhesive layer prior to the material which is to form the coating. 1. A magnetron sputter ion plating apparatus comprising;a chamber with a top and a bottom, at least one substrate to be coated, said at least one substrate mounted on a holder located in the chamber and magnetic field means located in the chamber, the magnetic field means comprising at least two magnetrons and/or magnet assemblies each having an inner portion and an outer portion of opposite polarity, the magnetrons or magnet assemblies arranged as a closed field such that the outer portion of at least one of the magnetrons or magnet assemblies has a first polarity and an adjacent magnetron or magnet assembly has an outer portion with opposite polarity so that magnetic field lines extend between said magnetrons and/or magnet assemblies and substantially prevent the escape of electrons from the system between the magnetrons and/or magnet assemblies, at least two magnetrons with outer portions having opposing polarities are provided with targets of the same material and said at least two magnetrons are initially operated simultaneously for a period of time to perform a cleaning action and then apply a layer of material deposited from the said targets of the same material onto the said at least one substrate wherein the chamber is provided with side walls, a top and a bottom, the said at least two magnetrons and/or magnet assemblies are located at the side walls of the chamber and arranged around the holder on which the at least one substrate is located, which has a central position such that the magnetrons and/or magnet assemblies are substantially equally angularly spaced in a polygon or ring ...

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Номер записи: 73
15-02-2018 дата публикации

CONTACT TYPE POWER FEEDING APPARATUS

Номер: US20180048104A1
Автор: Saitou Shuuji
Принадлежит: ULVAC, INC.

There is provided a contact type power feeding apparatus in which, even if a brush Br disposed in a space between the axis body and the cylinder body that are disposed concentric with each other wears out as a result of sliding, contact can be surely secured between the brush and the axis body as well as the cylinder body, thereby efficiently causing electric current to flow between the two. A brush Br has first brush pieces each having an inner wall surface to make surface-contact with an outer peripheral surface of the axis body; and second brush pieces each having an outer wall surface to make a surface-contact with an inner peripheral surface of the cylinder body. The brush is constituted by alternately arranging, in the circumferential direction, the first brush pieces and the second brush pieces in a state of keeping them in surface-contact with each other. The side wall surfaces of the first brush pieces and the second brush pieces are respectively formed into a tapered shape which is inclined relative to the radial direction. Coil springs are disposed between the second brush pieces that are adjacent to each other, in order to give a biasing force in a direction to move the second brush pieces away from each other. 1. A contact type power feeding apparatus comprising:a conductive axis body;a conductive cylinder body concentrically disposed in the circumference of the axis body;a brush disposed in a space between the axis body and the cylinder body so as to electrically conduct the axis body and the cylinder body while the axis body and the cylinder body rotate relative to each other;wherein the brush is constituted by: first brush pieces having inner wall surfaces in surface-contact with an outer peripheral surface of the axis body; and second brush pieces having an outer wall surface in surface-contact with an inner peripheral surface of the cylinder body such that the first brush pieces and the second brush pieces are disposed alternately in the ...

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Номер записи: 74
03-03-2022 дата публикации

SPUTTERING SYSTEM AND DEPOSITION METHOD

Номер: US20220064783A1
Автор: CHENG Leilei, Liu Jun, Liu Ning, SU Tongshang, WANG Dongfang, Wang Qinghe, YAN Liangchen
Принадлежит:

A sputtering system and a deposition method are provided. The sputtering system includes at least two sputtering chambers. Each of the at least two sputtering chambers includes a plurality of targets separated from each other and a plurality of target pedestals. Each of the plurality of targets is mounted on a corresponding target pedestal of the plurality of target pedestals, and a gap between two adjacent targets of the plurality of targets has a width sufficient to accommodate at least one of the plurality of targets.

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Номер записи: 75
03-03-2022 дата публикации

Bright Color Coatings for Electronic Devices

Номер: US20220066397A1
Автор: Brian S. Tryon, Jozef M. Matlak, Lijie Bao, Maruwada Sukanya Sharma, Shiva K. Mandepudi, Sonja R. POSTAK
Принадлежит: Apple Inc

An electronic device may include conductive structures such as conductive housing structures. A high-brightness, visible-light-reflecting coating may be formed on the conductive structures. The coating may have adhesion and transition layers and an uppermost coloring layer on the adhesion and transition layers. At least the uppermost coloring layer may be deposited using a high impulse magnetron sputtering (HiPIMS) process. The uppermost coloring layer may include a TiCrN film, a TiCrCN film, a TiCN film, or a metal nitride film that contains Ti, Zr, Hf, or Cr. The coating may exhibit a high-brightness gold color.

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Номер записи: 76
03-03-2022 дата публикации

Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate

Номер: US20220068610A1
Автор: Adrian Herde, Edmund SCHÜNGEL, Silvio Gees
Принадлежит: EVATEC AG

In a vacuum treatment recipient, a plasma is generated between a first plasma electrode and a second plasma electrode so as to perform a vacuum plasma treatment of a substrate. To minimize at least one of the two plasma electrodes to be buried by a deposition of material resulting from the treatment process, that electrode is provided with a surface pattern of areas which do not contribute to the plasma electrode effect and of areas which are plasma electrode effective. The current path between the two electrodes is concentrated on the distinct areas which are plasma electrode effective, leading to an ongoing sputter- cleaning of these areas.

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Номер записи: 77
03-03-2022 дата публикации

SYSTEMS AND METHODS FOR A MAGNETRON WITH A SEGMENTED TARGET CONFIGURATION

Номер: US20220068619A1
Автор: Choudhary Nitin, Correra Michael S., Forgey Christian K., Lariviere Marc-Andre, LI CHAO, Rios Reyes Juan M., Trang Brendan V.
Принадлежит: OEM Group, LLC

The present invention provides a magnetron system comprising a baseplate assembly that defines a housing portion and a power feedthrough. A magnet assembly and a segmented target assembly are disposed within the housing portion. The segmented target assembly has an inner target segment having a plurality of target tiles. A plurality of electrical contacts are in electrical communication with the power feedthrough, wherein each electrical contact of the plurality of electrical contacts electrically contacts a respective target tile of the plurality of target tiles such that power is delivered from each electrical contact of the plurality of electrical contacts to each respective target tile of the plurality of target tiles. 1. A magnetron system , comprising:a baseplate assembly defining a housing portion and a power feedthrough;a segmented target assembly having an inner target segment disposed within the housing portion, the inner target segment having a plurality of target tiles;a plurality of electrical contacts in electrical communication with the power feedthrough, wherein each electrical contact of the plurality of electrical contacts electrically contacts a respective target tile of the plurality of target tiles such that power is delivered from each electrical contact of the plurality of electrical contacts to each respective target tile of the plurality of target tiles; anda magnet assembly disposed within the housing portion.2. The system of claim 1 , wherein the segmented target assembly further comprising an outer target segment having a plurality of target tiles wherein the outer target segment surrounds the inner target segment.3. The system of claim 2 , wherein the magnet assembly further comprising:an outer magnet assembly comprising a first grouping of the plurality of magnet pairs; andan inner magnet assembly comprising a second grouping of the plurality of magnet pairs;wherein the outer magnet assembly surrounds the inner magnet assembly.4. The ...

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Номер записи: 78
03-03-2022 дата публикации

SYSTEMS AND METHODS FOR AN IMPROVED MAGNETRON ELECTROMAGNETIC ASSEMBLY

Номер: US20220068620A1
Автор: Choudhary Nitin, Correra Michael S., Forgey Christian K., Lariviere Marc-Andre, LI CHAO, Rios Reyes Juan M., Senseman William W., Trang Brendan V.
Принадлежит: OEM Group, LLC

The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.

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Номер записи: 79
13-02-2020 дата публикации

Film Forming Apparatus and Film Forming Method

Номер: US20200048759A1
Автор: SHINADA Masato, TOSHIMA Hiroyuki
Принадлежит:

There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part. 1. A film forming apparatus , comprising:a processing chamber having a processing space in which a film forming process is performed on a substrate;a substrate support part configured to support the substrate inside the processing chamber;at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; andat least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate,wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, anda portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.2. The apparatus of claim 1 , further comprising:a gas introduction part through which a sputtering gas is introduced into the processing chamber,wherein the at least one sputtering particle emission part includes a plurality of sputtering particle emission parts, each of the plurality of sputtering particle emission parts including a target holder configured to hold the target and a power source ...

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Номер записи: 80
23-02-2017 дата публикации

APPARTUS AND METHOD FOR PRODUCING SPUTTER-DEPOSITED COATINGS ON FLUIDIZED PARTICLE BEDS

Номер: US20170051392A1
Автор: Baechle Daniel M., WETZEL ERIC D.
Принадлежит: THE UNITED STATES GOVERNMENT AS REPRESENTED BY THE SECRETARY OF THE ARMY

A method and an apparatus for producing metal and ceramic coatings on a fluidized bed of particles or fibers are described. The method utilizes a unique apparatus to transfer vibratory motion through a wall of a deposition chamber in order to produce a fluidized bed of particle or fluidized bed of fibers inside the chamber. The method and apparatus are versatile, allowing particles of different shapes, sizes, materials and masses to be fluidized and coated. The fluidization process allows uniform and conformal coatings on particles and fibers. Coatings of pure metals, alloys, or ceramic materials can be produced. 122.-. (canceled)23. An apparatus for physical vapor deposition of a coating onto a plurality of particles or fibers , the apparatus comprising:a holder in a chamber,a vacuum for reducing the pressure inside the chamber,a means for generating vibration external to the chamber,a sealed, mechanical linkage that extends through a wall of the chamber that is connected to the holder through the wall of the chamber,and a means for depositing a metal coating or a ceramic coating onto a plurality of particles or fibers in the holder.2422. The apparatus of claim wherein the means for generating vibration is selected from the group consisting of electromagnetic and piezoelectric shakers.2522. The apparatus of claim wherein the sealed , mechanical linkage comprises a rotary feed-through that transmits the vibration that is generated external to the chamber by the means for generating vibration through a wall of the chamber to the holder inside of the chamber while maintaining reduced pressure inside of the chamber.2622. The apparatus of claim wherein the mechanical linkage comprises an angled metal or an angled composite rod.2722. The apparatus of claim wherein the mechanical linkage comprises a first rigid angled rod that is coupled to the means for generating vibrations , a first shaft coupler rigidly connecting first rigid angled rod to a vacuum-rated rotary motion ...

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Номер записи: 81
23-02-2017 дата публикации

Apparatus and method for coating inner wall of metal tube

Номер: US20170051393A1
Автор: Geun Hyuk LEE, In Seol SONG, Se Hoon AN, Seong Woo JANG, Seung Hee Han
Принадлежит: Korea Advanced Institute of Science and Technology KAIST

An apparatus and a method for coating an inner wall of a metal tube are provided. The apparatus for coating an inner wall of a metal tube includes mounting posts on which both end openings of a metal tube are mounted and configured to block the inside of the metal tube from the ambient air so that a pressure in the metal tube is adjustable by the vacuum exhaust and inflow of process gases, a sputtering target metal tube installed inside the metal tube coaxially with the metal tube, a pulse electromagnet installed around an outside perimeter of the metal tube coaxially with the metal tube to apply a pulse magnetic field in an axial direction of the metal tube, an electromagnetic pulse power supply unit configured to apply pulse power to the pulse electromagnet, and a sputtering pulse power supply unit configured to synchronize a negative high-voltage pulse with the pulse power applied to the pulse electromagnet and apply to the sputtering target metal tube.

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Номер записи: 82
25-02-2021 дата публикации

METHODS AND APPARATUS FOR DEPOSITING ALUMINUM BY PHYSICAL VAPOR DEPOSITION (PVD)

Номер: US20210057186A1
Автор: HOI Siew Kit, Wang Xinxin, YAOYING ZHONG
Принадлежит:

Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size. 1. A method of performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate comprising:depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; anddepositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.2. The method of claim 1 , wherein depositing a first aluminum layer is performed at a temperature below 350° C.3. The method of claim 1 , wherein depositing a first aluminum layer is performed a first gas pressure in an amount of less than 10 mTorr.4. The method of claim 1 , wherein depositing a first aluminum layer is performed at a first AC power in an amount of 600 W to 1200 W.5. The method of claim 1 , wherein depositing a first aluminum yer is performed at a first DC power in an amount of 4 kW to 60 kW.6. The method of claim 1 , wherein the first aluminum layer is deposited by exposing the substrate to aluminum and argon in a physical vapor deposition process.7. The method of claim 1 , wherein an aluminum material is formed using a physical vapor deposition process comprising an aluminum target.8. The method of claim 1 , wherein depositing aluminum atop the second aluminum layer to increase the second grain size is performed at a substrate temperature greater than ...

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Номер записи: 83
25-02-2021 дата публикации

SPUTTERING TARGET

Номер: US20210057196A1
Автор: KURODA Toshiaki, TAKIGAWA Mikio
Принадлежит: Sumitomo Chemical Company, Limited

A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering. 1a thickness of the ramp is 0.5 mm to 5 mm.. A sputtering target comprising a target material, wherein a sputtering face of the target material has a circular shape and a ramp, wherein the ramp has been provided so as to reduce a thickness of the target material, toward inner part of the sputtering face in the radial direction of the sputtering face, at a position in a range of 14% or more and less than 60% of a diameter of the sputtering face, and This application is a Divisional application of co-pending application Ser. No. 15/935,605, filed on Mar. 26, 2018, which claims the benefit under 35 U.S.C. § 119(a) to Patent Application No. 2017-064985, filed in Japan on Mar. 29, 2017 and Patent Application No. 2017-183878, filed in Japan on Sep. 25, 2017, all of which are hereby expressly incorporated by reference into the present application.The present invention relates to a sputtering target.Sputtering is a process in which an inert gas such as argon is introduced under vacuum and a high voltage is applied between a substrate and a target material to thereby collide the inert gas being plasmatized (or being ionized) with the target material and to sputter target atoms included in the target material, leading to deposition of the sputtered atoms on the substrate to form a thin film on the substrate.For example, there has generally been known magnetron sputtering in which a magnet is arranged on the back side of a sputtering face of the target material (i.e., face of a side where the inert gas made into plasma (or being ionized) is brought into collision in the target material), thereby enhancing a deposition rate.A sputtering target used in such sputtering typically has a plate shape, a cylindrical shape, or a disc shape. ...

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Номер записи: 84
13-02-2020 дата публикации

METHODS AND APPARATUS FOR PRODUCING LOW ANGLE DEPOSITIONS

Номер: US20200051794A1
Автор: BREZOCZKY Thomas, FORSTER JOHN, Guo Yang, HOUSHMAND FARZAD, Kothnur Prashanth, KRAUS PHILIP, MAZZOCCO JOHN JOSEPH, MEBARKI BENCHERKI, RAJA PRABURAM, SANSONI STEVEN V., SUBRAMANI ANANTHA K.
Принадлежит:

Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber. 1. A three dimensional (3D) magnetron for plasma deposition on a substrate , comprising:an inner pole piece with a top surface in a first plane; and a first portion and a second portion having top surfaces in the first plane, wherein the first portion and the second portion are positioned on opposite sides of the inner pole piece;', 'a third portion with a first end connected to a first end of the first portion and extending upward beyond the first plane in a perpendicular direction;', 'a fourth portion with a first end connected to a second end of the first portion and extending upward beyond the first plane in a perpendicular direction;', 'a fifth portion with a first end connected to a first end of the second portion and extending upward beyond the first plane in a perpendicular direction;', 'a sixth portion with a first end connected to a second end of the second portion and extending upward beyond the first plane in a perpendicular direction;', 'a seventh portion with a first end connected to a second end of the third portion and a second end connected to a second end of the fifth portion; and', 'an eighth portion with a first end connected to a second end of the fourth portion and a second end connected to a second end of the sixth portion., 'an outer pole piece, comprising2. The 3D magnetron of claim 1 , wherein an inner surface of the third ...

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Номер записи: 85
13-02-2020 дата публикации

COLLIMATOR FOR SELECTIVE PVD WITHOUT SCANNING

Номер: US20200051798A1
Автор: LEE JOUNG JOO, MEBARKI BENCHERKI, TANG XIANMIN
Принадлежит:

Collimator assemblies and process chambers for processing substrates including collimator assemblies are provided herein. In some embodiments, a collimator assembly may include a first cylindrical divider, a second cylindrical divider nested entirely within the first cylindrical divider, and a third cylindrical divider nested entirely within the second cylindrical divider, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. In some embodiments, a process chamber for processing substrates may include a magnetron source, a target supported by a target backing plate cathode disposed below the magnetron source, and a collimator assembly having a plurality of nested cylindrical dividers, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. 1. A collimator assembly , comprising:a first cylindrical divider; anda second cylindrical divider nested within the first cylindrical divider; anda third cylindrical divider nested within the second cylindrical divider,wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant.2. The collimator assembly of claim 1 , wherein the first claim 1 , second and third cylindrical dividers are not concentric and do not have the same central axis.3. The collimator assembly of claim 1 , wherein each of the first claim 1 , second and third cylindrical dividers has a first open end and an opposing second open end claim 1 , and wherein the second open end is angled with respect to the first open end such that a height of a wall of each cylindrical divider varies about its diameter.4. The collimator assembly of claim 1 , wherein each of the first claim 1 , second and third cylindrical dividers include a top opening and a bottom opening.5. The collimator assembly of claim 1 , ...

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Номер записи: 86
13-02-2020 дата публикации

SYSTEM AND METHOD FOR PARTICLE CONTROL IN MRAM PROCESSING

Номер: US20200051799A1
Автор: KUO Tsung-Han, WANG Po-Shu, WANG Wei-Ming
Принадлежит:

A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate. 1. A film deposition system comprising:a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; anda particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma,wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.2. The system of claim 1 , wherein the particle control unit comprises one of the following: at least one pair of electromagnetic coils and at least one pair of conductive electrodes.3. The system of claim 2 , wherein the at least one pair of electromagnetic coils and the at least one pair of conductive ...

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Номер записи: 87
05-03-2015 дата публикации

SPUTTERING SYSTEMS FOR LIQUID TARGET MATERIALS

Номер: US20150060262A1
Автор: Hollars Dennis R.
Принадлежит:

A sputtering system comprises a magnetron assembly for depositing liquid metal films on a substrate. The magnetron assembly comprises a horizontal planar magnetron with a liquid metal target, a cylindrical rotatable magnetron with a metal target and a set of one or more shields forming a chamber between the planar and the rotatable magnetron. 1. A sputtering system for depositing a film on a substrate , comprising: a rotatable magnetron adjacent to a horizontal magnetron; and', 'one or more shields forming a chamber between said rotatable magnetron and said horizontal magnetron,', 'wherein said horizontal magnetron is configured to contain a liquid target having a first material and provide a material flux having said first material directed towards said rotatable magnetron, and', 'wherein said rotatable magnetron is configured to rotate a solid target having a second material in relation to said horizontal magnetron and provide a material flux having said first and second materials directed towards a substrate in view of said rotatable magnetron., 'a magnetron assembly comprising2. The sputtering system of claim 1 , wherein said first material has a first melting point and said second material has a second melting point claim 1 , and wherein said first melting point is lower than said second melting point.3. The sputtering system of claim 1 , wherein said first material is gallium and said second material is indium.4. The sputtering system of claim 1 , wherein said rotatable magnetron is at least partly cylindrical in shape.5. The sputtering system of claim 1 , wherein said horizontal magnetron comprises a backing plate adjacent to a magnetron body claim 1 , and wherein said magnetron body includes one or more magnets and said backing plate is adapted to hold said liquid target.6. The sputtering system of claim 1 , wherein said rotatable magnetron comprises a support member adapted to rotate said solid target in relation to said horizontal magnetron.7. The ...

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Номер записи: 88
10-03-2022 дата публикации

FILM FORMING METHOD, FILM FORMING APPARATUS, AND PROGRAM

Номер: US20220074044A1
Автор: Hirata Toshiharu
Принадлежит:

There is provided a film forming method performed in a film forming apparatus having cathode units capable of installing a plurality of targets. The method comprises performing a film formation process using a first target between the first target and a second target that are disposed at the cathode units and are made of the same material, based on a recipe of the first target, receiving from a user, after a value for managing a lifespan of the first target has reached a predetermined threshold, selection of the second target to be used for the film forming process, and performing the film forming process using the selected second target based on a recipe in which setting of target-related control items of the recipe of the first target is converted for the selected second target. 1. A film forming method performed in a film forming apparatus having cathode units capable of installing a plurality of targets , comprising:performing a film formation process using a first target between the first target and a second target, based on a recipe of the first target, wherein the first and the second targets are disposed at the cathode units and are made of the same material;receiving from a user, after a value for managing a lifespan of the first target has reached a predetermined threshold, selection of the second target to be used for the film forming process; andperforming the film forming process using the selected second target based on a recipe in which setting of target-related control items of the recipe of the first target is converted for the selected second target.2. The film forming method of claim 1 , further comprising:receiving from the user, after a value for managing a lifespan of the second target selected by the user has reached the threshold, selection of another second target to be used for the film forming process among the second targets whose values for managing lifespans are smaller than the threshold; andperforming the film forming process using ...

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Номер записи: 89
01-03-2018 дата публикации

Method of Depositing Aluminum Oxide Film, Method of Forming the Same, and Sputtering Apparatus

Номер: US20180057929A1
Автор: IKEDA Yoshihiro, Miyaguchi Yuusuke, Nakamura Shinya, Suu Koukou
Принадлежит: ULVAC, INC.

There are provided a method of depositing an aluminum oxide film, a method of forming the same, and a sputtering apparatus, which are capable of depositing an aluminum oxide film that can be crystallized at a low-temperature annealing process. In the method of depositing an aluminum oxide film according to this invention, a target made of aluminum oxide and a substrate W to be processed are disposed inside a vacuum chamber, a rare gas is introduced into the vacuum chamber, and HF power is applied to the target to thereby deposit by sputtering the aluminum oxide film on the surface of the substrate, the pressure in the vacuum chamber during film deposition is set to a range of 1.6 through 2.1 Pa. 1. A method of depositing an aluminum oxide film comprising:disposing inside a vacuum chamber a target made of aluminum oxide and a substrate to be processed;introducing a rare gas into the vacuum chamber; andapplying RF power to the target in order to deposit by sputtering an aluminum oxide film on a surface of the substrate,characterized in that a pressure in the vacuum chamber during film deposition is set to a range of 1.6 through 2.1 Pa; andthat a temperature of the substrate during film deposition is set to a range of 450° C. through 550° C.2. (canceled)3. The method of depositing an aluminum oxide film according to claim 1 , wherein the RF power to be applied to the target is set to a range of 1 kW through 4 kW.4. A method of forming an aluminum oxide film comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'depositing an aluminum oxide film by using the method of depositing the aluminum oxide film according to ; and'}annealing the deposited aluminum oxide film at 800° C. through 850° C. in order to crystallize the aluminum oxide film.5. (canceled)6. A sputtering apparatus for carrying into effect the method of depositing an aluminum oxide film according to claim 1 , the apparatus comprising:a vacuum chamber in which a target made of aluminum oxide is ...

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Номер записи: 90
05-03-2015 дата публикации

TRANSPARENT BODY FOR USE IN A TOUCH PANEL AND ITS MANUFACTURING METHOD FOR APPARATUS

Номер: US20150062710A1
Автор: Grillmayer Jürgen, ZILBAUER Thomas Werner
Принадлежит: Applied Materials, Inc.

A process for manufacturing a transparent body for use in a touch screen panel is provided. The process includes: depositing a first transparent layer stack over a transparent substrate, wherein said first transparent layer stack includes at least a first dielectric film with a first refractive index, and a second dielectric film with a second refractive index different from the first refractive index, providing a structured transparent conductive film in a manner such that the first transparent layer stack and the transparent conductive film are disposed over the substrate in this order, and wherein the structured transparent conductive film has a sheet resistance of 100 Ohm/square or below, and depositing a second transparent layer stack over the transparent conductive film, wherein said second transparent layer stack includes at least a third dielectric film with a third refractive index, and a fourth dielectric film or a transparent adhesive with a fourth refractive index, wherein the first transparent layer stack, the structured transparent conductive film and the second transparent layer stack are provided in this order. 1. A process for manufacturing a transparent body for use in a touch screen panel , the process comprising:depositing a first transparent layer stack over a transparent substrate, wherein said first transparent layer stack includes at least a first dielectric film with a first refractive index, and a second dielectric film with a second refractive index different from the first refractive index; 'a layer stack, wherein the layer stack includes a third dielectric film with a gradient refractive index from a third refractive index to a fourth refractive index different from the third refractive index, and a layer stack, wherein the layer stack includes at least a third dielectric film with a third refractive index, and a fourth dielectric film or a transparent adhesive, respectively with a fourth refractive index different from the third ...

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Номер записи: 91
04-03-2021 дата публикации

METHOD AND CHAMBER FOR BACKSIDE PHYSICAL VAPOR DEPOSITION

Номер: US20210062325A1
Автор: CAO YONG, Che Xiaozhou, LAVAN Shane, RAMALINGAM Jothilingam, Zhou Chunming
Принадлежит:

A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber. 1. A method of depositing a backside film layer on a backside of a substrate , comprising: the front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and', 'a backside of the substrate faces a sputter target of the processing chamber;, 'loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, whereindepositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate; andapplying an RF bias to an electrode disposed within the substrate support while depositing the target material.2. The method of claim 1 , wherein the target material comprises silicon and a process gas used during the depositing comprises nitrogen-containing gas.3. The method of claim 2 , wherein the backside film layer comprises silicon nitride and has a thickness of between 0.1 μm and 1 μm.4. The method of claim 1 , wherein loading a substrate comprises positioning the substrate at a distance of between 1 mm and 3 mm spaced from the top surface of the substrate support and parallel to the top surface of the substrate support.5. The method of claim 1 , wherein loading a substrate comprises positioning the ...

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Номер записи: 92
05-03-2015 дата публикации

Deposition System And Method Of Forming A Metalloid-Containing Material Therewith

Номер: US20150064364A1
Автор: Nguyen Binh, Telgenhoff Michael
Принадлежит:

A method of forming a metalloid-containing material comprises the step of preparing a hydrometalloid compound in a low volume on-demand reactor. The method further comprises the step of feeding the hydrometalloid compound prepared in the microreactor to a deposition apparatus. Additionally, the method comprises the step of forming the metalloid-containing material from the hydrometalloid compound via the deposition apparatus. A deposition system for forming the metalloid-containing material comprises at least one low volume on-demand reactor coupled to and in fluid communication with a deposition apparatus. 1. A method of forming a metalloid-containing material with a deposition system which comprises at least one low volume on-demand reactor indirectly coupled to and in indirect fluid communication with a deposition apparatus , said method comprising the steps of:preparing a hydrometalloid compound in the low volume on-demand reactor;indirectly feeding the hydrometalloid compound prepared in the low volume on-demand reactor to the deposition apparatus; andforming the metalloid-containing material with the deposition apparatus.2. A method of forming a metalloid-containing material with a deposition system which comprises at least one low volume on-demand reactor coupled to and in fluid communication with a deposition apparatus , said method comprising the steps of:preparing a hydrometalloid compound in the low volume on-demand reactor from a precursor compound including at least one substituent other than hydrogen bonded to a metalloid atom;feeding the hydrometalloid compound prepared in the low volume on-demand reactor to the deposition apparatus; andforming the metalloid-containing material with the deposition apparatus.3. The method of wherein the deposition system further comprises at least one processing apparatus which is disposed between claim 1 , coupled to and in fluid communication with the low volume on-demand reactor and the deposition apparatus so as to ...

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Номер записи: 93
21-02-2019 дата публикации

Physical Vapor Deposition Chamber Particle Reduction Apparatus And Methods

Номер: US20190057849A1
Автор: Majeed A. Foad, Sanjay Bhat, Vibhu Jindal
Принадлежит: Applied Materials Inc

Physical vapor deposition processing chambers and methods of processing a substrate such as an EUV mask blank in a physical vapor deposition chamber are disclosed. An electric field and a magnetic field are utilized to deflect particles from a substrate being processed in the chamber.

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Номер записи: 94
21-02-2019 дата публикации

SPUTTERING GAP MEASUREMENT APPARATUS AND MAGNETRON SPUTTERING DEVICE

Номер: US20190057850A1
Автор: Kang Yingnan
Принадлежит:

A magnetron sputtering device in one embodiment of the present disclosure includes a support table supporting thereon a base substrate, and a floating mask arranged at a first side of the support table and substantially parallel to the support table. The sputtering gap measurement apparatus includes: a horizontal testing platform arranged on the support table during the measurement, a first edge of the horizontal testing platform being flush with an edge of the first side of the support table in the case that the horizontal testing platform is located at a first position; a first movement mechanism configured to control the horizontal testing platform to move in a direction close to the floating mask, the horizontal testing platform being in contact with the floating mask in the case that the horizontal testing platform has moved to a second position; and a distance measurement mechanism configured to measure a movement distance of the horizontal testing platform from the first position to the second position. 1. A sputtering gap measurement apparatus for a magnetron sputtering device , the magnetron sputtering device comprising a support table supporting thereon a base substrate and a floating mask arranged at a first side of the support table and substantially parallel to the support table , the sputtering gap measurement apparatus comprising:a horizontal testing platform arranged on the support table, a first edge of the horizontal testing platform being flush with an edge of the first side of the support table when the horizontal testing platform is located at a first position;a first movement mechanism configured to control the horizontal testing platform to move in a direction close to the floating mask, the horizontal testing platform being in contact with the floating mask when the horizontal testing platform has moved to a second position; anda distance measurement mechanism configured to measure a movement distance of the horizontal testing platform from ...

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Номер записи: 95
21-02-2019 дата публикации

Physical Vapor Deposition Processing Systems Target Cooling

Номер: US20190057851A1
Автор: Bhat Sanjay, Jindal Vibhu, Pandey Vishwas Kumar
Принадлежит:

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end. 1. A physical vapor deposition target assembly comprising:a source material;a backing plate having a front side and a back side, the backing plate configured to support the source material on a front side of the backing plate; anda cooling channel formed in the backing plate including an inlet end configured to be connected to a cooling fluid, an outlet end fluidly coupled to the inlet end, and the cooling channel comprising a plurality of arcs joined together by a plurality of bends between the inlet end and the outlet end, the backing plate configured to be to cool the source material during a physical vapor deposition process.2. The physical vapor deposition target assembly of claim 1 , further comprising a cooling tube that provides a closed cooling loop containing the cooling fluid claim 1 , the cooling tube disposed adjacent the cooling channel.3. The physical vapor deposition target assembly of claim 1 , the plurality of bends defining a flow pattern including a plurality of concentric arcs.4. The physical vapor deposition target assembly of claim 3 , the flow pattern comprising at least four arcs and five bends.5. The physical vapor deposition target assembly of claim 3 , the flow pattern comprising at least eight arcs and six bends.6. The physical vapor deposition target assembly of claim 3 , the flow pattern comprising a first pair of arcs and a second pair of arcs claim 3 , the inlet end fluidly connected to the first pair of arcs and second pair of arcs by a split connection claim 3 , and the outlet end fluidly connected to the first pair of arcs and second pair of arcs.7. The physical vapor deposition target assembly of claim 3 , the flow pattern comprising a first pair of arcs and a second pair of ...

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Номер записи: 96
03-03-2016 дата публикации

ION CONTROL FOR A PLASMA SOURCE

Номер: US20160064191A1
Автор: Morse Patrick Lawrence
Принадлежит:

One embodiment is directed to an apparatus including a plasma source and operation electronics coupled to the plasma source. The plasma source includes at least two electrodes configured to generate plasma. The operation electronics are configured to generate plasma with the at least two electrodes and apply an ion flux modification bias to the at least two electrodes. 1. An apparatus comprising:a plasma source including at least two electrodes configured to generate plasma; generate plasma with the at least two electrodes; and', 'apply an ion flux modification bias to the at least two electrodes., 'electronics coupled to the plasma source, the electronics configured to2. The apparatus of claim 1 , wherein apply an ion flux modification bias includes apply a positive voltage to the at least two electrodes concurrently.3. The apparatus of claim 1 , wherein apply an ion flux modification bias includes apply a negative voltage to the at least two electrodes concurrently.4. The apparatus of claim 1 , wherein generate plasma includes alternate a first of the at least two electrodes between being biased as a cathode and being biased as an anode claim 1 , and alternate a second of the at least two electrodes between being biased as an anode and being biased as a cathode claim 1 , wherein the second electrode is biased as an anode while the first electrode is biased as a cathode and the second electrode is biased as a cathode while the first electrode is biased as an anode.5. The apparatus of claim 1 , wherein the electronics are configured to apply one or more ion flux modification biases after generating plasma claim 1 , and to repeat generating plasma and applying one or more ion flux modification biases one or more times.6. The apparatus of claim 1 , wherein the electronics include a switching unit coupled to the at least two electrodes claim 1 , and one or more direct current power supplies coupled to the switching unit.7. The apparatus of claim 1 , comprising:one or ...

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Номер записи: 97
02-03-2017 дата публикации

FILM FORMING APPARATUS

Номер: US20170062192A1
Автор: ENDO Yuta, Kawata Takuya, OOTA Masashi, YAMANE Yasumasa
Принадлежит:

An oxide with high crystallinity is provided. An oxide having a crystal structure with few defects is provided. An oxide with a low density of defect states is provided. An oxide with a low impurity concentration is provided. A film forming apparatus capable of forming a film of the above-described oxide can be provided. The film forming apparatus includes a target holder, a substrate holder, a first power source, and a second power source. The target holder is electrically connected to the first power source, the substrate holder is electrically connected to the second power source, and the second power source is configured to apply a potential that is higher than a ground potential. 1. A film forming apparatus comprising:a target holder;a substrate holder;a first power source; anda second power source,wherein the target holder is electrically connected to the first power source,wherein the substrate holder is electrically connected to the second power source, andwherein the second power source is configured to apply a potential that is higher than a ground potential.2. The film forming apparatus according to claim 1 , wherein the potential is higher than a potential of plasma generated during film formation.3. The film forming apparatus according to claim 1 , wherein a maximum magnetic flux density in a direction perpendicular to a front surface of the target holder is more than or equal to 50 G and less than or equal to 150 G at a plane that is 30 mm away in a perpendicular direction from the front surface of the target holder.4. A film forming apparatus comprising:a target holder;a substrate holder;a first inlet; anda second inlet,wherein the first inlet is positioned closer to the target holder than to the substrate holder,wherein the second inlet is positioned closer to the substrate holder than to the target holder,wherein the first inlet is configured to introduce a first gas, andwherein the second inlet is configured to introduce a second gas.5. The film ...

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Номер записи: 98
02-03-2017 дата публикации

SPUTTER TARGET FOR FORMING A LAYER OF A PERPENDICULAR RECORDING MEDIUM BY MAGNETRON SPUTTERING

Номер: US20170062194A1
Автор: KOYAMA Kazunori, SAHADEVAN Ajeesh Mavolil, Singh Amarendra Kumar
Принадлежит:

A sputter target for forming a layer of a perpendicular recording medium by magnetron sputtering, wherein material composition of the sputter target is varied along a radius of the sputter target from a centre of the sputter target to an outer diameter of the sputter target. 1. A sputter target for forming a layer of a perpendicular recording medium by magnetron sputtering , wherein material composition of the sputter target is varied along a radius of the sputter target from a centre of the sputter target to an outer diameter of the sputter target.2. The sputter target of claim 1 , wherein material composition of the sputter target is varied by gradation of the material composition.3. The sputter target of claim 1 , wherein material composition of the sputter target is varied by providing a number of concentric regions in the sputter target wherein each concentric region has a different material composition from other concentric regions in the number of concentric regions.4. The sputter target of claim 3 , wherein the sputter target has a diameter of 170 mm claim 3 , a first region of the sputter target comprising its centre extends to a radius of 40 mm claim 3 , a second region adjacent to and beyond the first region extends from a radius of 40 mm to 60 mm claim 3 , and a remaining area of the sputter target beyond the second region forms a third region of the sputter target.5. The sputter target of claim 1 , wherein the layer comprises a recording layer and the sputter target comprises one of: a CoCrPtX-oxide and a CoCrPtX.6. The sputter target of claim 5 , wherein the sputter target comprises the CoCrPtX-oxide and proportion of the oxide in the sputter target ranges from 5% to 25%.7. The sputter target of claim 6 , wherein proportion of the oxide increases radially from a centre to an outer region of the sputter target.8. The sputter target of claim 6 , wherein proportion of the oxide decreases radially from a centre to an outer region of the sputter target.9100 ...

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Номер записи: 99
08-03-2018 дата публикации

Processing device and collimator

Номер: US20180067330A1
Автор: Masakatsu Takeuchi, Shiguma KATO, Takahiro Terada, Yasuhiro Aoyama, Yoshinori Tokuda
Принадлежит: Toshiba Corp

According to one embodiment, a processing device comprises a substance arrangement part, a generating source arrangement part, and a collimator. A substance is arranged on the substance arrangement part. The generating source arrangement part is arranged at a position separated away from the substance arrangement part. A particle generating source that is able to emit a particle to the substance is arranged on the generating source arrangement part. The collimator is configured to be arranged between the substance arrangement part and the generating source arrangement part. The collimator includes: a frame; and a first rectifying part that includes a plurality of first walls and a plurality of first through holes formed with the first walls and extending in a first direction from the generating source arrangement part toward the substance arrangement part, the collimator configured to be removably attached to the frame.

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Номер записи: 100