Wiring board and fabricating method thereof, semiconductor device and fabricating method thereof, circuit board and electronic instrument

A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Formation of conductive circuit

本發明的課題為提供一種藉由印刷法，將矽橡膠成為印刷圖型之結構形成材料，方便得到與形成印刷電路之電極良好之接合性之導電性電路之形成方法。 本發明之解決手段係一種導電性電路之形成方法，其係藉由含有：(A)具有至少與2個矽原子鍵結之烯基之有機聚矽氧烷、(B)具有至少與2個矽原子鍵結之氫原子(SiH基)之有機聚矽氧烷、(C)導電性粒子、(D)選自碳黑、鋅華、錫氧化物、錫-銻系氧化物及SiC之觸變化劑、及(E)氫化矽烷化觸媒，且實質上未含有溶劑之液狀之加成硬化型導電性電路繪圖用油墨組成物，將具有特定之圖型之電路圖型印刷層印刷於金屬電極上，使其燒成而硬化，成為導電性電路的同時接合該導電性電路與金屬電極。

CONNECTION STRUCTURE

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

TRANSIENT LIQUID PHASE MATERIAL BONDING AND SEALING STRUCTURES AND METHODS OF FORMING SAME

A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

Semiconductor device, mounting circuit board, method of producing the same, and method of producing mounting structure using the same

The invention is intended for providing a semiconductor package structure which prevents degradation in characteristics of a semiconductor device and breakage of the interconnections when the semiconductor device is packaged on a circuit substrate. In the package structure having the semiconductor device mounted on the circuit substrate, bump electrodes of the semiconductor device are placed on input/output terminal electrodes of the circuit substrate and are electrically and mechanically connected thereto by bonding with conductive adhesive, and the semiconductor device is bonded and fixed to the circuit substrate by a resin film formed previously on a surface of the substrate. The structure does no damage to a semiconductor functional part and to interconnections, and allows mounting with a lower load in comparison with structures using conventional anisotropic conductive films and the like, so that heat-press bonding mounting with a high productivity and a low cost can be applied.

재료들의 소결 및 그를 이용하는 부착 방법들

... 멀티칩 및 플립(flip) 칩들을 포함하는 단일 구성요소들의 다이 부착을 위한 방법들은 소결 페이스트를 기판 상에 또는 다이의 뒷면 상에 프린팅하는 단계를 포함할 수 있다. 프린팅은 스텐실 프린팅, 스크린 프린팅, 또는 디스펜싱(dispensing) 프로세스를 포함할 수 있다. 페이스트는 다이싱(dicing) 이전에 전체 웨이퍼(wafer)의 뒷면 상에, 또는 개별적인 다이의 뒷면 상에 프린팅될 수 있다. 소결 막들이 또한, 제작되고 웨이퍼, 다이 또는 기판으로 이동될 수 있다. 후소결 단계는 처리량을 증가시킬 수 있다.

ENGINEERED POLYMER-BASED ELECTRONIC MATERIALS

Wire interconnect article and computing system comprising the same

A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

Magnetic contacts

Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with magnetic contacts, as well as corresponding fabrication methods and systems incorporating such magnetic contacts. A first IC substrate may have a first magnet coupled with a first electrical routing feature. A second IC substrate may have a second magnet coupled with a second electrical routing feature. The magnets may be embedded in the IC substrates and/or electrical routing features. The magnets may generate a magnetic field that extends across a gap between the first and second electrical routing features. Electrically conductive magnetic particles may be applied to one or both of the IC substrates to form a magnetic interconnect structure that extends across the gap. In some embodiments, magnetic contacts may be demagnetized by heating the magnets to a corresponding partial demagnetization temperature (PDT) or Curie temperature. Other embodiments may be described and/or claimed.

Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages

A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

SINTERING MATERIALS AND ATTACHMENT METHODS USING SAME

ELECTROMIGRATION-RESISTANT AND COMPLIANT WIRE INTERCONNECTS, NANO-SIZED SOLDER COMPOSITIONS, SYSTEMS MADE THEREOF, AND METHODS OF ASSEMBLING SOLDERED PACKAGES

Engineered polymer-based electronic materials

一種用於電子組裝製程的組成，組成包含分散於有機介質的填料，其中：有機介質包含聚合物；填料包含一或更多的石墨烯、官能化石墨烯、氧化石墨烯、多面體寡聚半矽氧烷、石墨、二維材料、氧化鋁、氧化鋅、氮化鋁、氮化硼、銀、奈米纖維、碳纖維、鑽石、奈米碳管、二氧化矽和金屬塗覆粒子，及組成按組成總重量計包含0.001-40重量%的填料。

재료들의 소결 및 그를 이용하는 부착 방법들

... 멀티칩 및 플립(flip) 칩들을 포함하는 단일 구성요소들의 다이 부착을 위한 방법들은 소결 페이스트를 기판 상에 또는 다이의 뒷면 상에 프린팅하는 단계를 포함할 수 있다. 프린팅은 스텐실 프린팅, 스크린 프린팅, 또는 디스펜싱(dispensing) 프로세스를 포함할 수 있다. 페이스트는 다이싱(dicing) 이전에 전체 웨이퍼(wafer)의 뒷면 상에, 또는 개별적인 다이의 뒷면 상에 프린팅될 수 있다. 소결 막들이 또한, 제작되고 웨이퍼, 다이 또는 기판으로 이동될 수 있다. 후소결 단계는 처리량을 증가시킬 수 있다.

ELECTRONIC COMPONENT MOUNTED STRUCTURE AND METHOD OF MANUFACTURING THE SAME

An electronic component mounted structure is constituted by connecting together via a conductive adhesive 2 the electrode terminals 1a of a first electronic component such as a semiconductor element 1 and the electrode terminals 6a (here, projecting electrodes formed thereon) of a second electronic component such as a circuit substrate 6, and filling a molding resin 4 into a gap between the semiconductor element 1 and the circuit substrate 6. The molding resin 4 is composed of a low elasticity layer 3 and a high elasticity layer having higher elasticity than the low elasticity layer, and the low elasticity layer 3 lies adjacent to the whole of the outer surface of the conductive adhesive 2.

Elastic conductive resin, and electronic device including elastic conductive bumps made of the elastic conductive resin

An electronic device includes an electronic part including at least one first electrode, a substrate including at least one second electrode, and at least one bump formed on the at least one first electrode and formed from an elastic conductive resin including a resin having rubbery elasticity, and an acicular conductive filler including a surface layer coated with one of gold, silver, nickel, and copper. The at least one first electrode and the at least one second electrode are electrically connected to each other by mechanically contacting the at least one bump with the at least one second electrode.

Sintering Materials and Attachment Methods Using Same

Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

TRANSIENT LIQUID PHASE MATERIAL BONDING AND SEALING STRUCTURES AND METHODS OF FORMING SAME

A bonding element includes a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

Engineered polymer-based electronic materials

Missing bump against galvanic corrosion by copper bump sidewall protection

Elastic electroconductive resin and electronic device

本发明涉及弹性导电树脂及电子装置。本发明的弹性导电树脂含有具有橡胶状弹性的树脂及针状导电充填物，用Au，Ag，Ni，Cu中之一包覆该针状充填物的表层，其中针状充填物的直径大于0.5μm且小于2μm、长度大于10μm且小于100μm。针状充填物的芯材可以是晶须。容易制作直径小、形状纵横比大的导电充填物，能实现弹性导电树脂的微细化。既能保持树脂的高弹性，且能以少的导电充填物含有量赋与树脂良好的导电性。本发明的电子装置通过使得弹性导电体形成为凸块状，对压缩力具有大的变形能力，且具有良好的导电性，使得该弹性导电凸块与电极机械接触，在预定变形量条件下，能降低加压力，因此，能扩大凸块高度偏差的允许范围。

Wiring board and fabricating method thereof, semiconductor device and fabricating method thereof, circuit board and electronic instrument

A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Wiring board and fabricating method thereof, semiconductor device and fabricating method thereof, circuit board and electronic instrument

A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Sintering materials and attachment methods using same

Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

Elastic conductive resin, and electronic device including elastic conductive bumps made of the elastic conductive resin

An electronic device includes an electronic part including at least one first electrode, a substrate including at least one second electrode, and at least one bump formed on the at least one first electrode and formed from an elastic conductive resin including a resin having rubbery elasticity, and an acicular conductive filler including a surface layer coated with one of gold, silver, nickel, and copper. The at least one first electrode and the at least one second electrode are electrically connected to each other by mechanically contacting the at least one bump with the at least one second electrode.

Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages

A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

Semiconductor device, mounting circuit board, method of producing the same, and method of producing mounting structure using the same

The invention is intended for providing a semiconductor package structure which prevents degradation in characteristics of a semiconductor device, and breakage of interconnections, when the semiconductor device is packaged on a circuit substrate. In the package structure having the semiconductor device mounted on the circuit substrate, bump electrodes of the semiconductor device are placed on input/output terminal electrodes of the circuit substrate and are electrically and mechanically connected thereto by bonding with a conductive adhesive, and the semiconductor device is bonded and fixed to the circuit substrate by a resin film formed previously on a surface of a main body of the circuit substrate. The structure does no damage to a semiconductor functional part and to interconnections, and allows mounting with a lower load as compared to structures using conventional anisotropic conductive films and the like.

Wire interconnect article and computing system comprising the same

ELECTROMIGRATION-RESISTANT AND COMPLIANT WIRE INTERCONNECTS, NANO-SIZED SOLDER COMPOSITIONS, SYSTEMS MADE THEREOF, AND METHODS OF ASSEMBLING SOLDERED PACKAGES

Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages

A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

MAGNETIC CONTACTS

Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with magnetic contacts, as well as corresponding fabrication methods and systems incorporating such magnetic contacts. A first IC substrate may have a first magnet coupled with a first electrical routing feature. A second IC substrate may have a second magnet coupled with a second electrical routing feature. The magnets may be embedded in the IC substrates and/or electrical routing features. The magnets may generate a magnetic field that extends across a gap between the first and second electrical routing features. Electrically conductive magnetic particles may be applied to one or both of the IC substrates to form a magnetic interconnect structure that extends across the gap. In some embodiments, magnetic contacts may be demagnetized by heating the magnets to a corresponding partial demagnetization temperature (PDT) or Curie temperature. Other embodiments may be described and/or claimed.

Magnetic contacts

Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with magnetic contacts, as well as corresponding fabrication methods and systems incorporating such magnetic contacts. A first IC substrate may have a first magnet coupled with a first electrical routing feature. A second IC substrate may have a second magnet coupled with a second electrical routing feature. The magnets may be embedded in the IC substrates and/or electrical routing features. The magnets may generate a magnetic field that extends across a gap between the first and second electrical routing features. Electrically conductive magnetic particles may be applied to one or both of the IC substrates to form a magnetic interconnect structure that extends across the gap. In some embodiments, magnetic contacts may be demagnetized by heating the magnets to a corresponding partial demagnetization temperature (PDT) or Curie temperature. Other embodiments may be described and/or claimed.

Method for mounting an electronic part on a substrate using a liquid containing metal particles

An electronic part mounting method, a semiconductor module, and a semiconductor device, which can reduce a mounting area and a device thickness. In an electronic part mounting method for bonding an electrode formed on a substrate and an electrode formed on an electronic part to each other, the method comprises the step of bonding both the electrodes through a metal layer made up of aggregated particles of at least one kind of metal. Then, the metal particles have an average particle size of 1 to 50 nm. Preferably, the metal particles form a metal layer having a thickness of 5 to 100 mum.

Wafer-level chip-scale package structure utilizing conductive polymer

本發明為有關整合型傳導聚合物焊球結構及形成此類整合型傳導聚合物焊球結構的方法。該整合型傳導聚合物焊球結構包括：濺鍍晶種層，塗敷至晶圓結構；一或多個傳導聚合物接墊結構，塗敷至在該晶圓結構上將會形成一或多個焊球結構的位置的該已濺鍍晶種層；電鍍層，塗敷至該一或多個傳導聚合物接墊結構的已曝露光阻層的部分；以及焊球，形成在各該電鍍層上，從而形成該一或多個焊球結構。

Engineered polymer-based electronic materials

MISSING BUMP PREVENTION FROM GALVANIC CORROSION BY COPPER BUMP SIDEWALL PROTECTION

Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a resist layer disposed on a conductive layer. The semiconductor package also has a bump disposed on the conductive layer. The bump has a top surface and one or more sidewalls. The semiconductor package further includes a surface finish disposed on the top surface and the one or more sidewalls of the bump. The semiconductor package may have the surface finish surround the top surface and sidewalls of the bumps to protect the bumps from Galvanic corrosion. The surface finish may include a nickel-palladium-gold (NiPdAu) surface finish. The semiconductor package may also have a seed disposed on a top surface of the resist layer, and a dielectric disposed on the seed. The dielectric may surround the sidewalls of the bump. The semiconductor package may include the seed to be an electroless copper seed.

WIRING BOARD AND ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND CIRCUIT BOARD AND ELECTRONIC APPARATUS

PROBLEM TO BE SOLVED: To provide a wiring board which can be provided easily with conductive material in its through hole, and its manufacturing method, to provide a semiconductor device and its manufacturing method, and to provide a circuit board and an electronic circuit apparatus. SOLUTION: The manufacturing method for a semiconductor device includes a step for providing conductive material 40 on the side of a first face 30 of the through hole 24 made in a semiconductor element 10, and fusing the conductive material 40 to flow in the through hole 24. The conductive material 40 is let flow in the through hole 24 on condition that the pressure on the side of the second face 32 opposite to the first face 30 is lowered than the pressure on the side of the first face 30 of the semiconductor element 10. COPYRIGHT: (C)2002,JPO ...

Solder and electrically conductive adhesive based interconnection for CZT crystal attach

A structure for minimizing resistance between a semi-insulating x-ray detector crystal and an electrically conducting substrate. Electrical contact pads are disposed on the detector crystal and on the substrate with an electrical interconnect between the contact pads formed from a conductive adhesive and washed solder in electrical and mechanical communication with the pads.

ENGINEERED POLYMER-BASED ELECTRONIC MATERIALS

Connection structure

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

Magnetic contacts

Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with magnetic contacts, as well as corresponding fabrication methods and systems incorporating such magnetic contacts. A first IC substrate may have a first magnet coupled with a first electrical routing feature. A second IC substrate may have a second magnet coupled with a second electrical routing feature. The magnets may be embedded in the IC substrates and/or electrical routing features. The magnets may generate a magnetic field that extends across a gap between the first and second electrical routing features. Electrically conductive magnetic particles may be applied to one or both of the IC substrates to form a magnetic interconnect structure that extends across the gap. In some embodiments, magnetic contacts may be demagnetized by heating the magnets to a corresponding partial demagnetization temperature (PDT) or Curie temperature. Other embodiments may be described and/or claimed.

Sintering materials and attachment methods using same

Transient liquid phase material bonding and sealing structures and methods of forming same

A bonding element includes a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

SEMICONDUCTOR PACKAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

Electrically-conductive paste for die-bonding and method for die-bonding with the electrically-conductive paste

To provide an electrically-conductive paste for die-bonding a semiconductor element or the like to a substrate, capable of inhibiting defect generation of voids which occur at a bonded area. The electrically-conductive paste is used for die-bonding, and comprises a metallic powder and an organic solvent. The metallic powder comprises: one or more kinds of metallic particles having a purity of 99.9 mass% or more and an average particle diameter of 0.01 m to 1.0 m and selected from a silver powder, a palladium powder or a copper powder; and a covering layer comprising gold covering at least a part of the metallic particles.

Circuit substrate for packaging semiconductor device, method for producing the same, and method for producing semiconductor device package structure using the same

The invention is intended for providing a semiconductor package structure which prevents degradation in characteristics of a semiconductor device, and breakage of interconnections, when the semiconductor device is packaged on a circuit substrate. In the package structure having the semiconductor device mounted on the circuit substrate, bump electrodes of the semiconductor device are placed on input/output terminal electrodes of the circuit substrate and are electrically and mechanically connected thereto by bonding with a conductive adhesive, and the semiconductor device is bonded and fixed to the circuit substrate by a resin film formed previously on a surface of a main body of the circuit substrate. The structure does no damage to a semiconductor functional part and to interconnections, and allows mounting with a lower load as compared to structures using conventional anisotropic conductive films and the like.

Wafer-level chip-scale package structure utilizing conductive polymer

本發明為有關整合型傳導聚合物焊球結構及形成此類整合型傳導聚合物焊球結構的方法。該整合型傳導聚合物焊球結構包括：濺鍍晶種層，塗敷至晶圓結構；一或多個傳導聚合物接墊結構，塗敷至在該晶圓結構上將會形成一或多個焊球結構的位置的該已濺鍍晶種層；電鍍層，塗敷至該一或多個傳導聚合物接墊結構的已曝露光阻層的部分；以及焊球，形成在各該電鍍層上，從而形成該一或多個焊球結構。

Engineered polymer-based electronic materials

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

ELASTIC ELECTRICAL CONDUCTIVE RESIN AND ELASTIC ELECTRICAL CONDUCTIVE JOINT STRUCTURE

PROBLEM TO BE SOLVED: To provide an elastic electrical conductor having high electrical conductivity as well as high deformability against compressive force which can reduce the filler content to obtain high conductivity by using a filler having a high aspect ratio (lengthwise to crosswise ratio), and further is contrived for an electrical conductive resin rich in elasticity. SOLUTION: With the elastic electrical conductive resin having rubbery elasticity, the filler to be mixed into a rubbery elastic resin is an electrical conductive filler whose surface of a needle-like filler is coated with Au, Ag, Ni or Cu, and furthermore the core material of the above needle-like filler is a whisker. By utilizing the whisker as the core material of the needle-like filler, the electrical conductive filler having a small diameter and a high aspect ratio can be easily prepared, and accordingly it is possible to render the elastic electrical conductive resin fine. COPYRIGHT: (C)2004,JPO ...

Connection structure

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

CONNECTION STRUCTURE

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

STRUCTURE OF PACKAGING ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT PACKAGING BODY

PROBLEM TO BE SOLVED: To form a simple packaging structure which can connect an electronic component under a low pressure force and can ensure a high connection reliability, and to provide an electronic component packaging body. SOLUTION: In the packaging structure, an electrode terminal 1a of a semiconductor element 1 having a multilayer wiring layer 1b composed of a micro wiring layer and a brittle insulating film of a low dielectric constant is connected to an electrode terminal 6a (here, a projecting electrode 5 formed thereon) of a circuit board 6 through a conductive bonding agent 2, to charge a sealing resin 4 between the semiconductor element 1 and the circuit board 6. A stress relaxation layer 3 is formed surrounding a connection part by the conductive bonding agent 2. COPYRIGHT: (C)2010,JPO&INPIT ...

METHOD FOR MOUNTING AN ELECTRONIC PART ON A SUBSTRATE USING A LIQUID CONTAINING METAL PARTICLES

An electronic part mounting method, a semiconductor module, and a semiconductor device, which can reduce a mounting area and a device thickness. In an electronic part mounting method for bonding an electrode formed on a substrate and an electrode formed on an electronic part to each other, the method comprises the step of bonding both the electrodes through a metal layer made up of aggregated particles of at least one kind of metal. Then, the metal particles have an average particle size of 1 to 50 nm. Preferably, the metal particles form a metal layer having a thickness of 5 to 100 mum.

CONNECTION STRUCTURE AND METHOD FOR MANUFACTURING CONNECTION STRUCTURE

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, ranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

Wiring board and fabricating method thereof, semiconductor device and fabricating method thereof, circuit board and electronic instrument

A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Engineered Polymer-Based Electronic Materials

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

Connection structure and method for manufacturing connection structure

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages

A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

CONDUCTIVE PASTE FOR DIE BONDING, AND DIE BONDING METHOD WITH THE CONDUCTIVE PASTE

The present invention provides a conductive paste for die bonding comprising a metal powder and an organic solvent, the metal powder comprising: one or more metal particles selected from a silver powder, a palladium powder, and a copper powder, the metal particles having a purity of 99.9% by mass or higher and an average particle size of 0.01 m to 1.0 m; and a coating layer made of gold covering at least part of the metal particles. The conductive paste according to the present invention can suppress the occurrence of defects such as voids in a bonded part when a semiconductor element or the like is die-bonded to a substrate.

ELASTIC CONDUCTIVE RESIN, AND ELECTRONIC DEVICE INCLUDING ELASTIC CONDUCTIVE BUMPS MADE OF THE ELASTIC CONDUCTIVE RESIN

An electronic device includes an electronic part including at least one first electrode, a substrate including at least one second electrode, and at least one bump formed on the at least one first electrode and formed from an elastic conductive resin including a resin having rubbery elasticity, and an acicular conductive filler including a surface layer coated with one of gold, silver, nickel, and copper. The at least one first electrode and the at least one second electrode are electrically connected to each other by mechanically contacting the at least one bump with the at least one second electrode.

Wafer-level chip-scale package structure utilizing conductive polymer

本发明涉及利用传导聚合物的晶圆级芯片尺度封装结构，其为整合型传导聚合物焊球结构及形成此类整合型传导聚合物焊球结构的方法。该整合型传导聚合物焊球结构包括：溅镀晶种层，涂敷至晶圆结构；一或多个传导聚合物接垫结构，涂敷至在该晶圆结构上将会形成一或多个焊球结构的位置的该已溅镀晶种层；电镀层，涂敷至该一或多个传导聚合物接垫结构的已曝露光阻层的部分；以及焊球，形成在各该电镀层上从而形成该一或多个焊球结构。

FORMATION OF CONDUCTIVE CIRCUIT

A conductive circuit is formed using a substantially solvent-free, liquid, addition curable, conductive circuit-forming ink composition comprising (A) an organopolysiloxane having at least two silicon-bonded alkenyl groups, (B) an organohydrogenpolysiloxane having at least two SiH groups, (C) conductive particles, (D) a thixotropic agent, and (E) a hydrosilylation catalyst. The ink composition is printed on a metal electrode to form a green circuit pattern layer, which is fired and cured for thereby forming a conductive circuit and bonding the conductive circuit to the metal electrode.

Wiring board and fabricating method thereof, semiconductor device and fabricating method thereof, circuit board and electronic instrument

A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Process for forming a wire interconnect article, methods of assembling and operating a microelectronic device package

MAGNETIC CONTACTS

Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with magnetic contacts, as well as corresponding fabrication methods and systems incorporating such magnetic contacts. A first IC substrate may have a first magnet coupled with a first electrical routing feature. A second IC substrate may have a second magnet coupled with a second electrical routing feature. The magnets may be embedded in the IC substrates and/or electrical routing features. The magnets may generate a magnetic field that extends across a gap between the first and second electrical routing features. Electrically conductive magnetic particles may be applied to one or both of the IC substrates to form a magnetic interconnect structure that extends across the gap. In some embodiments, magnetic contacts may be demagnetized by heating the magnets to a corresponding partial demagnetization temperature (PDT) or Curie temperature. Other embodiments may be described and/or claimed.

Wafer-level chip-scale package structure utilizing conductive polymer

An integrated conductive polymer-solder ball structure is provided. The integrated conductive polymer-solder ball structure comprises a sputter seed layer applied to a wafer structure, one or more conductive polymer pad structures applied to the sputtered seed layer at locations on the wafer structure where one or more solder ball structures will be formed, an electroplating layer applied to portions of the one or more conductive polymer pad structures where a photoresist layer has been exposed, and a solder ball formed on each of the electroplating layers thereby forming the one or more solder ball structures.

ELASTIC CONDUCTIVE RESIN, AND ELECTRONIC DEVICE INCLUDING ELASTIC CONDUCTIVE BUMPS MADE OF THE ELASTIC CONDUCTIVE RESIN

An electronic device includes an electronic part including at least one first electrode, a substrate including at least one second electrode, and at least one bump formed on the at least one first electrode and formed from an elastic conductive resin including a resin having rubbery elasticity, and an acicular conductive filler including a surface layer coated with one of gold, silver, nickel, and copper. The at least one first electrode and the at least one second electrode are electrically connected to each other by mechanically contacting the at least one bump with the at least one second electrode.

Semiconductor package device and method of manufacturing the same

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages

弹性导电树脂及电子装置

... 本发明涉及弹性导电树脂及电子装置。本发明的弹性导电树脂含有具有橡胶状弹性的树脂，以及针状导电充填物，用Au，Ag，Ni，Cu中之一包覆该针状充填物的表层。针状充填物的芯材可以是晶须。容易制作直径小、形状纵横比大的导电充填物，能实现弹性导电树脂的微细化。既能保持树脂的高弹性，且能以少的导电充填物含有量赋与树脂良好的导电性。本发明的电子装置通过使得弹性导电体形成为凸块状，对压缩力具有大的变形能力，且具有良好的导电性，使得该弹性导电凸块与电极机械接触，在预定变形量条件下，能降低加压力，因此，能扩大凸块高度偏差的允许范围。 ...

Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages

A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

BUMP FOR SEMICONDUCTOR ELEMENT

PURPOSE: To prevent cracks for the production of a reliable connection in a thermal contact bonding process by a method wherein a bump constituted of a conductive resin composite is not thinner than 5μm and irregularities on its surface are not lower than 1 μm. CONSTITUTION: A bump 1 for a semiconductor element on an aluminum pad is constituted of a conductive resin composite. The conductive resin composite may be a mixture of such a photosensitive resin as an epoxy, acrylate-based resin or imide resin equipped with an acrylate radical and one or more of conducting fine particles such as Ni fine particles, Ni fine particles plated with gold, fine particles of Au, Pd, and Rh. The diameter of a metal particle should be 0.2W2.0 μm on the average. Such a conductive resin composite will provide a coating on the entire surface of a silicon wafer 4 and viscosity and other conditions will be so set that the coating will be not less than 5μm thick. As for the upper limit of the thickness, 30 μm ...

MISSING BUMP PREVENTION FROM GALVANIC CORROSION BY COPPER BUMP SIDEWALL PROTECTION

Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a resist layer disposed on a conductive layer. The semiconductor package also has a bump disposed on the conductive layer. The bump has a top surface and one or more sidewalls. The semiconductor package further includes a surface finish disposed on the top surface and the one or more sidewalls of the bump. The semiconductor package may have the surface finish surround the top surface and sidewalls of the bumps to protect the bumps from Galvanic corrosion. The surface finish may include a nickel-palladium-gold (NiPdAu) surface finish. The semiconductor package may also have a seed disposed on a top surface of the resist layer, and a dielectric disposed on the seed. The dielectric may surround the sidewalls of the bump. The semiconductor package may include the seed to be an electroless copper seed. 1. A semiconductor package , comprising:a resist layer on a conductive layer;a bump on the conductive layer, wherein the bump has a top surface and one or more sidewalls; anda surface finish on the top surface and the one or more sidewalls of the bump.2. The semiconductor package of claim 1 , wherein the surface finish surrounds the top surface and the one or more sidewalls of the bump to protect the bump from corrosion.3. The semiconductor package of claim 1 , wherein the surface finish is a nickel-palladium-gold (NiPdAu) surface finish.4. The semiconductor package of claim 1 , further comprising:a seed on a top surface of the resist layer; anda dielectric on the seed, wherein the dielectric surrounds the one or more sidewalls of the bump.5. The semiconductor package of claim 4 , wherein the seed is an electroless copper seed.6. The semiconductor package of claim 4 , further comprising a gap opening formed between the dielectric and the one or more sidewalls of the bump claim 4 , wherein the one or more sidewalls of the bump are exposed by the ...

Electronic component packaging method, semiconductor module, and semiconductor device

本发明提供可实现缩小安装面积及薄形化的电子部件的安装方法、半导体模块及半导体器件。本发明的一个课题解决手段是将形成于基板上的电极和形成于电子部件上的电极进行接合的电子部件的安装方法，所述接合通过凝聚了至少一种金属粒子的金属层来进行接合。而且，所述金属粒子以平均粒径为1～50nm构成。另外，最好是构成其厚度为5～100μm的金属层。

Method for producing connection structure

Connection structure

一种连接结构体，包含：第1构件，其具有第1面；第1电极，其配置于第1面；第2构件，其具有与第1面对向的第2面；第2电极，其与第1电极对向、且配置于第2面；导电性粒子和第1树脂，配置于间隔开的复数个第1区域，间隔开的复数个第1区域是位于第1电极和第2电极之间的区域；以及第2树脂，配置于间隔开的复数个第1区域，且配置于作为位于第1电极和第2电极之间的区域的间隔开的复数个第1区域之间和周围的第2区域；其中：第1树脂在间隔开的复数个第1区域中与第1电极接触；第2树脂在间隔开的复数个第1区域中与第2电极接触；第2区域的第2树脂，比间隔开的复数个第1区域的第2树脂更厚；并且第1树脂与第2树脂的组成不同。

Conductive paste for die bonding, and die bonding method using conductive paste for die bonding

The present invention provides a conductive paste for die bonding comprising a metal powder and an organic solvent, the metal powder comprising: one or more metal particles selected from a silver powder, a palladium powder, and a copper powder, the metal particles having a purity of 99.9% by mass or higher and an average particle size of 0.01 µm to 1.0 µm; and a coating layer made of gold covering at least part of the metal particles. The conductive paste according to the present invention can suppress the occurrence of defects such as voids in a bonded part when a semiconductor element or the like is die-bonded to a substrate.

마이크로 범프 및 이의 제조 방법

본 발명은 반도체 소자와 기판을 접합시키는 마이크로 범프 및 이의 제조 방법에 관한 것으로서, 마이크로 단위의 반도체 소자을 기판에 쉽게 접합시킬 수 있으며, 마이크로 사이즈로 쉽게 대량생산이 가능한 마이크로 범프 및 이의 제조 방법에 관한 것이다.

焼結材料、及びそれを用いる接着方法

【課題】各種コンポーネントを接着（接合）するための方法を提供する。【解決手段】フリップチップなどのマルチチップ及び単一コンポーネントのダイ接着のための方法であって、基板の上又はダイの裏側に焼結ペーストをプリントすることを含むことができる。プリンティングは、ステンシルプリンティング、スクリーンプリンティング、又はディスペンシングプリンティングを含むことができる。ペーストは、ダイシングの前に全ウェハの裏側にプリントすることができる、又は個々のダイの裏側にプリントすることができる。また、焼結膜は、作成後、ウェハ、ダイ、又は基板に転写することができる。ポスト焼結工程は、スループットを上げることができる。【選択図】図３２

電子部品の製造方法、電子部品および電子機器

【課題】 電子部品と相手側基板とを確実に電気的接続することが可能な、電子部品の製造方法を提供する。 【解決手段】 電子部品の能動面にレジスト２０を形成する工程と、レジスト２０の表面にフッ素樹脂膜２１を形成する工程と、電極パッド４２の上方にレジスト２０の開口部を形成する工程と、開口部の内側にバンプ４４を形成する工程と、（ａ）バンプ４４の表面に導電性粒子５０を散布する工程と、（ｂ）導電性粒子５０を熱可塑性樹脂５２によりバンプ４４の表面に固着させる工程とを有し、（ｃ）レジスト２０の剥離にともなって熱可塑性樹脂５２が剥離されない構成とした。 【選択図】 図３

Engineered Polymer-Based Electronic Materials

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

焼結材料、及びそれを用いる接着方法

Sintering materials and attachment methods using same

Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

재료들의 소결 및 그를 이용하는 부착 방법들

멀티칩 및 플립(flip) 칩들을 포함하는 단일 구성요소들의 다이 부착을 위한 방법들은 소결 페이스트를 기판 상에 또는 다이의 뒷면 상에 프린팅하는 단계를 포함할 수 있다. 프린팅은 스텐실 프린팅, 스크린 프린팅, 또는 디스펜싱(dispensing) 프로세스를 포함할 수 있다. 페이스트는 다이싱(dicing) 이전에 전체 웨이퍼(wafer)의 뒷면 상에, 또는 개별적인 다이의 뒷면 상에 프린팅될 수 있다. 소결 막들이 또한, 제작되고 웨이퍼, 다이 또는 기판으로 이동될 수 있다. 후소결 단계는 처리량을 증가시킬 수 있다.

마이크로 범프 및 이의 제조 방법

본 발명은 반도체 소자와 기판을 접합시키는 마이크로 범프 및 이의 제조 방법에 관한 것으로서, 마이크로 단위의 반도체 소자을 기판에 쉽게 접합시킬 수 있으며, 마이크로 사이즈로 쉽게 대량생산이 가능한 마이크로 범프 및 이의 제조 방법에 관한 것이다.

微凸塊以及其製造方法

本發明是有關於一種將半導體元件與基板接合的微凸塊以及其製造方法，且是有關於一種可易於將微單位的半導體元件接合至基板並且可易於以微小大小實現大量生產的微凸塊以及其製造方法。

비아-라스트 프로세스를 이용하는 하이브리드 제조법

수정된 비아-라스트 프로세스를 이용한 하이브리드 제조법을 사용하여 제조된 마이크로전자 어셈블리가 개시된다. 제조 접근법은 원래 서로 다른 다이에 제공된 제1 및 제2 IC 구조물을 결합하지만, IC 구조물이 본딩된 후, 제1 및 제2 IC 구조물 사이의 본딩 인터페이스에 걸쳐 전기 전도성 재료와 결합할 비아의 적어도 일부를 채우는 하이브리드 제조법을 사용하는 것에 기초한다. 함께 본딩된 제1 및 제2 IC 구조물을 포함하는 결과적인 마이크로전자 어셈블리는, 제1 IC 구조물의 전체를 통과하여 제2 IC 구조물 내로 연장되는 비아를 가질 수 있고, 따라서 제1 IC 구조물의 하나 이상의 컴포넌트와 제2 IC 구조물의 컴포넌트 사이에 전기적 결합을 제공하며, 개별 비아 내의 전기 전도성 재료는 제1 IC 구조물과 제2 IC 구조물의 적어도 일부를 통과하여 연속적이다조.

连接结构体及连接结构体的制作方法

本发明的课题在于确保电极间的导电性，并且抑制邻接的电极彼此短路的情况。本发明的连接结构体的制作方法包括：在配置于第1构件的第1面上的第1电极之上配置导电性粒子与第1组合物，在所述第1面的所述第1电极与第1电极以外的区域之上配置第2组合物，将所述第1面与配置有第2电极的第2构件的第2面以所述第1电极与所述第2电极对向的方式进行配置，按压所述第1构件及所述第2构件，并且使所述第1组合物及所述第2组合物固化。

Connection structure

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

接続構造体および接続構造体の作製方法

【課題】電極間の導電性を確保するとともに、隣接する電極同士が短絡することを抑制すること。【解決手段】接続構造体の作製方法は、第１の部材の第１の面に配置された第１の電極の上に導電性粒子と第１の組成物とを配置し、前記第１の面の前記第１の電極と第１の電極以外の領域の上に第２の組成物を配置し、前記第１の面と、第２の電極が配置された第２の部材の第２の面とを、前記第１の電極と前記第２の電極が対向するように配置し、前記第１の部材および前記第２の部材を押圧し、前記第１の組成物及び前記第２の組成物を硬化させる、ことを含む。【選択図】図１

连接结构体及连接结构体的制作方法

本发明的课题在于确保电极间的导电性，并且抑制邻接的电极彼此短路的情况。本发明的连接结构体的制作方法包括：在配置于第1构件的第1面上的第1电极之上配置导电性粒子与第1组合物，在所述第1面的所述第1电极与第1电极以外的区域之上配置第2组合物，将所述第1面与配置有第2电极的第2构件的第2面以所述第1电极与所述第2电极对向的方式进行配置，按压所述第1构件及所述第2构件，并且使所述第1组合物及所述第2组合物固化。

Connection structure

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

连接结构体

一种连接结构体，包含：第1构件，其具有第1面；第1电极，其配置于第1面；第2构件，其具有与第1面对向的第2面；第2电极，其与第1电极对向、且配置于第2面；导电性粒子和第1树脂，配置于间隔开的复数个第1区域，间隔开的复数个第1区域是位于第1电极和第2电极之间的区域；以及第2树脂，配置于间隔开的复数个第1区域，且配置于作为位于第1电极和第2电极之间的区域的间隔开的复数个第1区域之间和周围的第2区域；其中：第1树脂在间隔开的复数个第1区域中与第1电极接触；第2树脂在间隔开的复数个第1区域中与第2电极接触；第2区域的第2树脂，比间隔开的复数个第1区域的第2树脂更厚；并且第1树脂与第2树脂的组成不同。

弹性导电树脂及电子装置

本发明涉及弹性导电树脂及电子装置。本发明的弹性导电树脂含有具有橡胶状弹性的树脂及针状导电充填物，用Au，Ag，Ni，Cu中之一包覆该针状充填物的表层，其中针状充填物的直径大于0.5μm且小于2μm、长度大于10μm且小于100μm。针状充填物的芯材可以是晶须。容易制作直径小、形状纵横比大的导电充填物，能实现弹性导电树脂的微细化。既能保持树脂的高弹性，且能以少的导电充填物含有量赋与树脂良好的导电性。本发明的电子装置通过使得弹性导电体形成为凸块状，对压缩力具有大的变形能力，且具有良好的导电性，使得该弹性导电凸块与电极机械接触，在预定变形量条件下，能降低加压力，因此，能扩大凸块高度偏差的允许范围。

半導体素子用バンプ

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

连接结构体及连接结构体的制作方法

本发明的课题在于确保电极间的导电性，并且抑制邻接的电极彼此短路的情况。本发明的连接结构体的制作方法包括：在配置于第1构件的第1面上的第1电极之上配置导电性粒子与第1组合物，在所述第1面的所述第1电极与第1电极以外的区域之上配置第2组合物，将所述第1面与配置有第2电极的第2构件的第2面以所述第1电极与所述第2电极对向的方式进行配置，按压所述第1构件及所述第2构件，并且使所述第1组合物及所述第2组合物固化。

通过铜凸块侧壁保护而防止受电偶腐蚀而缺失凸块

实施例包括半导体封装件和形成半导体封装件的方法。半导体封装件包括安置于导电层上的抗蚀层。半导体封装件还具有安置于导电层上的凸块。凸块具有顶面和一个或多个侧壁。半导体封装件还包括安置于凸块的顶面和一个或多个侧壁上的表面抛光剂。半导体封装件可以具有环绕凸块的顶面和侧壁以保护凸块免受电偶腐蚀的表面抛光剂。表面抛光剂可以包括镍‑钯‑金（NiPdAu）表面抛光剂。半导体封装件还可以具有安置于抗蚀层的顶面上的晶种和安置于晶种上的电介质。电介质可以环绕凸块的侧壁。半导体封装件可以包括作为无电镀的铜晶种的晶种。

半导体封装装置及其制造方法

本公开揭示一种半导体封装装置，其包含载体、第一电子组件，及在所述载体上的导电元件。所述第一电子组件在所述载体上方。所述导电元件在所述载体上且将所述第一电子组件电连接到所述载体。所述导电元件包含至少一个导电颗粒及覆盖所述导电颗粒的焊料材料，且所述导电颗粒包含金属芯、覆盖所述金属芯的阻挡层，以及覆盖所述阻挡层的金属层。