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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 40668. Отображено 100.

12-01-2012 дата публикации

Light emitting apparatus, and method for manufacturing the same, and lighting system

Номер: US20120007123A1

Автор: Bum Chul Cho

Принадлежит: Bum Chul Cho

A light emitting apparatus includes: a substrate including a first conductive type impurity; a first heatsink and a second heatsink on a first region and a second region of the substrate; second conductive type impurity regions on the substrate and electrically connected to the first heatsink and the second heatsink, respectively; a first electrode electrically connected to the first heatsink on the substrate; a second electrode electrically connected to the second heatsink on the substrate; and a light emitting device electrically connected to the first electrode and the second electrode on the substrate.

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Номер записи: 1

12-01-2012 дата публикации

Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same

Номер: US20120009697A1

Автор: Hyun Wook Shim, Jong Sun Maeng, Sung Tae Kim, Young Sun Kim

Принадлежит: Hyun Wook Shim, Jong Sun Maeng, Sung Tae Kim, Young Sun Kim

A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

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Номер записи: 2

12-01-2012 дата публикации

Techniques of Forming Ohmic Contacts on GaN Light Emitting Diodes

Номер: US20120009705A1

Автор: Andrew J. Felker, Nicholas Andrew Vickers

Принадлежит: Soraa Inc

A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.

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Номер записи: 3

26-01-2012 дата публикации

Phosphor member, method of manufacturing phosphor member, and illuminating device

Номер: US20120018761A1

Автор: Mika Honda

Принадлежит: Konica Minolta Opto Inc

In the present invention, provided is a phosphor member capable of improving a yield and an extraction rate, in addition to high environmental tolerance, high heat resistance, high durability and a high color rendering property, by which variations of color and an amount of light are reduced, and also provided are a method of manufacturing the phosphor member and an illuminating device. Disclosed is a phosphor member prepared separately from an LED light source constituting a white illuminating device, wherein the phosphor member possesses phosphor particles and an inorganic layer having been subjected to coating and a heat treatment.

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Номер записи: 4

02-02-2012 дата публикации

Package of light emitting device and method of manufacturing the same

Номер: US20120025240A1

Автор: Shen-Bo Lin

Принадлежит: Advanced Optoelectronic Technology Inc

A method of manufacturing a package of light emitting device includes the following steps: providing a light emitting element and positioning the light emitting element at a bottom of a reflecting cup; providing phosphors and a compound of epoxy resin and silicone, and mixing the phosphors and the compound of epoxy resin and silicone to obtain a mixture by a process of kneading; and encapsulating the light emitting element with the mixture to form an encapsulant received in the reflecting cup.

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Номер записи: 5

02-02-2012 дата публикации

Led package and method for manufacturing the same

Номер: US20120025243A1

Автор: Shen-Bo Lin

Принадлежит: Advanced Optoelectronic Technology Inc

An LED package includes a substrate, an LED chip, a bounding dam, and a first encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The LED chip is mounted on the first surface of the substrate. The bounding dam is formed on the first surface of the substrate and surrounds the LED chip. The bounding dam and the substrate cooperatively define a receiving space. The bounding dam is made of thermoset resin. The first encapsulation is formed in the receiving space and encloses the LED chip.

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Номер записи: 6

02-02-2012 дата публикации

Semiconductor light-emitting device

Номер: US20120025251A1

Автор: Takuya Kazama

Принадлежит: Stanley Electric Co Ltd

A semiconductor light-emitting device includes a reflective electrode on a support; a first cladding layer; a light-emitting layer; a second cladding layer having a terrace structure formed of recesses and protrusions, a light-extracting structure having projections and depressions being formed on top surfaces of the protrusions and bottom surfaces of the recesses; and surface electrodes on the top surfaces of the protrusions. The second cladding layer has a stacked structure, which includes a first current-spreading layer, a first light-extracting layer on the first current-spreading layer and having the light-extracting structure on the bottom surfaces of the recesses, a second current-spreading layer on the first light-extracting layer, and a second light-extracting layer on the second current-spreading layer and having the light-extracting structure on the top surfaces of the protrusions, and the first and second light-extracting layer have lower light absorptance and higher resistance than the first and second current-spreading layer.

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Номер записи: 7

02-02-2012 дата публикации

Semiconductor device

Номер: US20120025260A1

Автор: Kenichi Ito, Shigehisa Oonakahara, Tooru Aoyagi, Yuu Hasegawa

Принадлежит: Panasonic Corp

A semiconductor device includes a lead frame, a first semiconductor element mounted on the lead frame, a frame-like member formed on the lead frame, surrounding the first semiconductor element, and a protective resin filling a space surrounded by the frame-like member. The lead frame has an external terminal protruding outside the frame-like member. The external terminal has a barrier portion which is located at an end portion thereof protruding from the frame-like member and rises from a top surface of the external terminal.

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Номер записи: 8

09-02-2012 дата публикации

White led device and manufacturing method thereof

Номер: US20120032217A1

Автор: Jui-Kang Yen

Принадлежит: SemiLEDs Optoelectronics Co Ltd

The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.

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Номер записи: 9

09-02-2012 дата публикации

Packaged light emitting diodes including phosphor coating and phosphor coating systems

Номер: US20120032220A1

Автор: Mitchell Jackson, Nathaniel O. Cannon

Принадлежит: Cree Inc

Light emitting structures are disclosed that can include a semiconductor light emitting diode (LED) that includes a p-n junction active layer. A first layer can include a binder material having a thickness that is less than about 1000 μm, wherein the first layer is directly on the LED. A second layer can include phosphor particles, where the second layer can have a thickness that is less than about 1000 μm and can be directly on the first layer so that the first layer is between the LED and the second layer.

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Номер записи: 10

23-02-2012 дата публикации

Light-emitting diode

Номер: US20120043524A1

Автор: Eiji Fujii, Hiroyuki Tanaka, Nobuaki Nagao, Takahiro Hamada

Принадлежит: Panasonic Corp

An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

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Номер записи: 11

23-02-2012 дата публикации

Light-emitting devices with substrate coated with optically denser material

Номер: US20120043568A1

Автор: Chunhui Yan, Jianping Zhang

Принадлежит: INVENLUX CORP

A light-emitting device includes a transparent substrate with a light emitting structure formed on one side of the substrate and a transparent layer formed on the opposing side of the substrate. The refractive index of the transparent layer is greater than the refractive index of the substrate. A light-emitting device includes a package cup having a reflective sidewall and a light emission surface and a light emitting diode (LED) embedded in the package cup. The LED comprises a transparent substrate and a transparent layer formed on the substrate. The reflective sidewall has a first portion in a central area of the package cup and a second portion in a peripheral area of the package cup, the first portion reflects light emitted from the transparent layer to the second portion and, then, the second portion further reflects the light received from the first portion to the light emission surface of the package cup.

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Номер записи: 12

23-02-2012 дата публикации

Light emitting device and manufacturing method thereof

Номер: US20120043573A1

Автор: Aoi Okada, Iwao Mitsuishi, Keiko Albessard, Masahiro Kato, Naotoshi Matsuda, Shinya Nunoue, Yumi Fukuda

Принадлежит: Toshiba Corp

A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 μm or more. (M 1−x1 Eu x1 ) 3−y Si 13−z Al 3+z O 2+u N 21−w (1) (In the equation ( 1 ), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0<x1<1, −0.1<y<0.3, −3<z≦1, −3<u−w≦1.5)

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Номер записи: 13

01-03-2012 дата публикации

High-brightness light emitting diode

Номер: US20120049234A1

Автор: Chih-ching Cheng

Принадлежит: Huga Optotech Inc

A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, a trench penetrating the second semiconductor layer and the active layer thereby exposing a portion of the first semiconductor layer, an first electrode disposed at the bottom of the trench, an insulating layer covering the trench and the first electrode, and a second electrode disposed overlying the insulating layer in parallel with the first electrode, wherein the second electrode overlaps with the first electrode.

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Номер записи: 14

01-03-2012 дата публикации

Solid state lighting devices with improved contacts and associated methods of manufacturing

Номер: US20120049756A1

Автор: Martin F. Schubert

Принадлежит: Micron Technology Inc

Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

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Номер записи: 15

08-03-2012 дата публикации

Semiconductor device

Номер: US20120056153A1

Автор: Eiji Muramoto, Maki Sugai, Shinji Saito, Shinya Nunoue

Принадлежит: Toshiba Corp

A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

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Номер записи: 16

08-03-2012 дата публикации

Semiconductor light emitting device and method for manufacturing same

Номер: US20120056232A1

Автор: Akira Fujimoto, Eishi TSUTSUMI, Koji Asakawa, Masaaki Ogawa, Ryota Kitagawa, Shinji Nunotani, Takanobu Kamakura

Принадлежит: Toshiba Corp

A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

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Номер записи: 17

15-03-2012 дата публикации

Semiconductor light emitting device and manufacturing method thereof

Номер: US20120061642A1

Автор: SATOSHI Tanaka

Принадлежит: Stanley Electric Co Ltd

A semiconductor light emitting device which includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The semiconductor light emitting device comprises a first transparent electrode made of metal oxide transparent conductor provided on a surface of the p-type semiconductor layer; a second transparent electrode made of a metal oxide transparent conductor provided on the surface of the p-type semiconductor layer and electrically connected to the first transparent electrode; and a p-side electrode pad made of metal provided on a surface of the second transparent electrode. The second transparent electrode is higher in contact resistance with the p-type semiconductor layer than the first transparent electrode.

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Номер записи: 18

15-03-2012 дата публикации

Light emitting device and manufacturing method of light emitting device

Номер: US20120061703A1

Автор: Mitsuhiro Kobayashi

Принадлежит: Toshiba Corp

A light emitting device may include a base provided with a recess portion in a side surface thereof, a light emitting element mounted on a main surface of the base, a first resin body filled in an inside of the recess portion, and covering at least the main surface and the light emitting element, a second resin body covering an outside of the first resin body from the main surface side to at least a position of the lowermost end of the recess portion in a direction orthogonal to the main surface, and phosphor, provided in the second resin body, for absorbing light emitted from the light emitting element and then emitting light having a different wavelength.

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Номер записи: 19

15-03-2012 дата публикации

Semiconductor light-emitting device manufacturing method and semiconductor light-emitting device

Номер: US20120061715A1

Автор: Ji-Hao Liang, Tatsuma Saito

Принадлежит: Stanley Electric Co Ltd

There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers.

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Номер записи: 20

22-03-2012 дата публикации

Micro-structure phosphor coating

Номер: US20120068208A1

Автор: Chi Xiang Tseng, Hsiao-Wen Lee

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An optical emitter includes micro-structure phosphor coating on a light-emitting diode die mounted on a package substrate. The micro-structures are transferred onto a micro-structure phosphor coating precursor by patterning and curing the precursor or by curing the precursor through a mold. The micro-structures are half spheroids, three-sided pyramids, or six-sided pyramids.

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Номер записи: 21

29-03-2012 дата публикации

Re-emitting semiconductor construction with enhanced extraction efficiency

Номер: US20120074381A1

Автор: Catherine A. Leatherdale, Michael A. Haase, Terry L. Smith, Yasha Yi, Zhaohui Yang

Принадлежит: 3M Innovative Properties Co

A stack of semiconductor layers ( 310 ) forms a re-emitting semiconductor construction (RSC). The stack ( 310 ) includes an active region ( 316 ) that converts light at a first wavelength to light at a second wavelength, the active region ( 316 ) including at least one potential well. The stack ( 310 ) also includes an inactive region ( 318 ) extending from an outer surface of the stack to the active region. Depressions ( 326 ) are formed in the stack ( 310 ) that extend from the outer surface into the inactive region ( 318 ). An average depression depth is at least 50% of a thickness of the inactive region. Alternatively, the average depression depth is at least 50% of a nearest potential well distance. Still other alternative characterizations of the depressions ( 326 ) are also disclosed. The depressions ( 326 ) may have at least a 40% packing density in plan view. The depressions ( 326 ) may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.

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Номер записи: 22

29-03-2012 дата публикации

Lead frame structure, a packaging structure and a lighting unit thereof

Номер: US20120074451A1

Автор: Chen-Hsiu Lin

Принадлежит: Lite On Technology Corp, Silitek Electronic Guangzhou Co Ltd

A lead frame structure, a packaging structure and a lighting unit are disclosed. The lead frame structure includes at least two first lead frame units having a space therebetween, and the two first lead frame units are arranged in an opposite manner. Each the first lead frame unit has a first conducting portion, a second conducting portion, and a first connection portion between the first and the second conducting portions. Moreover, the first connection portion has at least two grooves on a surface thereof.

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Номер записи: 23

05-04-2012 дата публикации

Light emitting diode package and method of making the same

Номер: US20120080693A1

Автор: HUNG-YI LIN, Kuan-Jui Huang, She-Fen Tien, Yen-Ting Kung

Принадлежит: Touch Micro System Technology Inc

The light emitting diode package of the present invention uses photosensitive materials to form phosphor encapsulations or a phosphor layer, which can be fabricated by means of semiconductor processes in batch. Also, the concentration of phosphors in individual regions can be accurately and easily controlled by a laser printing process or by light-through holes. Accordingly, the optic effects of light emitting diode packages can be accurately adjusted.

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Номер записи: 24

05-04-2012 дата публикации

Led encapsulation process and shield structure made thereby

Номер: US20120081000A1

Автор: Chien-yuan Chen, Yi-Sheng Chen

Принадлежит: Power Data Communications Co Ltd

The present invention discloses an LED encapsulation process and a shield structure made thereby. Firstly, a first encapsulation layer is provided, phosphor powder is uniformly disposed on a surface of the first encapsulation layer, and a second encapsulation layer is disposed on the phosphor powder to fully cover the first encapsulation layer so that the phosphor powder is sandwiched between the two encapsulation layers to ensure its arrangement position. Finally, the aforementioned members are heated and stamped to form one piece which is cut into a required shield shape.

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Номер записи: 25

12-04-2012 дата публикации

Light-emitting diode device and manufacturing method thereof

Номер: US20120086029A1

Автор: Chang-Hsin Chu, Kuo-Hui Yu

Принадлежит: Chi Mei Lighting Technology Corp

A light-emitting diode (LED) device includes a substrate and an epitaxial layer which is disposed on a surface of the substrate. A depression is disposed to a sidewall of the LED device, and a reflective layer is disposed to on least one portion of the depression. By the reflective layer disposed to the depression of the sidewall of the LED device, the light loss caused by the interface of the substrate and the epitaxial layer can be reduced, the light absorbed by the substrate can be decreased, and the angle of the light exiting from the LED device can be adjusted. A manufacturing method of the LED device is also disclosed.

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Номер записи: 26

12-04-2012 дата публикации

Led package, and mold and method of manufacturing the same

Номер: US20120086031A1

Автор: Chih-Hsun Ke, Shiun-Wei Chan

Принадлежит: Advanced Optoelectronic Technology Inc

The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package.

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Номер записи: 27

12-04-2012 дата публикации

Wavelength conversion component

Номер: US20120087105A1

Автор: Bing Dai, Charles Edwards, Gang Wang, James Caruso, Xianglong Yuan

Принадлежит: Intematix Corp

A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component comprises a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. In addition, the color appearance of the lighting apparatus in its OFF state can be improved by implementing the light diffusing layer in combination with the wavelength conversion layer. Moreover, significant reductions can be achieved in the amount phosphor materials required to implement phosphor-based LED devices.

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Номер записи: 28

19-04-2012 дата публикации

Light-emitting device and method for manufacturing the same

Номер: US20120091481A1

Автор: Kazutoshi Kamibayashi, Shigenobu Sekine, Yoshiharu Kuwana, Yurina SEKINE

Принадлежит: Napra Co Ltd

A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The first through electrode passes through the substrate part with one end connected to an opposing end of the first vertical conductor, while the second through electrode passes through the substrate part with one end connected to an opposing end of the second vertical conductor. The opposing ends of the first and second vertical conductors are projected from a surface of the insulating layer and connected to the ends of the first and second through electrode inside the support substrate.

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Номер записи: 29

26-04-2012 дата публикации

Light emitting diode package

Номер: US20120098000A1

Автор: Jian-Shihn Tsang

Принадлежит: Hon Hai Precision Industry Co Ltd

An exemplary light emitting package includes a base, an LED chip mounted on the base, an encapsulant layer encapsulating the LED chip and a phosphor layer located above and separated from the LED chip. The phosphor layer includes a phosphor scattered portion and a clear portion without phosphor therein. An area of the phosphor scattered portion is smaller than the light emitting area of the encapsulant layer from which light emitted upwardly from the LED chip leaves the encapsulant layer.

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Номер записи: 30

26-04-2012 дата публикации

Optoelectronic semiconductor component and method for producing an inorganic optoelectronic semiconductor component

Номер: US20120098016A1

Автор: Lutz Höppel, Norwin von Malm

Принадлежит: OSRAM Opto Semiconductors GmbH

An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer.

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Номер записи: 31

26-04-2012 дата публикации

Efficient led-based illumination modules with high color rendering index

Номер: US20120099290A1

Автор: Gerard Harbers, Raghuram L.V. Petluri

Принадлежит: Xicato Inc

An illumination module includes a light mixing cavity with an interior surface area and window that are physically separated from an LED. A portion of the window is coated with a first wavelength converting material and a portion of the interior surface area is coated with a second wavelength converting material. The window may be coated with LuAG:Ce. The window may also be coated with a third wavelength converting material with a peak emission wavelength between 615-655 nm where the spectral response of light emitted from the window is within 20% of a blackbody radiator at the same CCT. The LED may emit a light that is converted by the light mixing cavity with a color conversion efficiency ratio greater than 130 lm/W where the light mixing cavity includes two photo-luminescent materials with a peak emission wavelengths between 508-528 nm and 615-655 nm.

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Номер записи: 32

26-04-2012 дата публикации

Method for distributing phosphor particulates on led chip

Номер: US20120100646A1

Автор: Chih-Hsun Ke, Shiun-Wei Chan

Принадлежит: Advanced Optoelectronic Technology Inc

A method for distributing phosphor particulates on an LED chip, includes steps of: providing a substrate having an LED chip mounted thereon; dispensing an adhesive on the chip, wherein the adhesive have positively charged phosphor particulates doped therein; providing an upper mold and a lower mold for producing an electric field through the adhesive and moving the upper mold to press the adhesive, wherein the phosphor particulates are driven by the electric field to move to a top face of the chip; and curing the adhesive and removing the upper mold and the lower mold.

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Номер записи: 33

24-05-2012 дата публикации

Heat sinking element and method of treating a heat sinking element

Номер: US20120125577A1

Автор: Cheng-Chuan Wang, Chia-Ying Yen, Hsin-Hwa Chen

Принадлежит: Industrial Technology Research Institute ITRI

A heat sinking element and a method of treating a heat sinking element are provided. The heat sinking element includes a metal substrate. The metal substrate is mainly composed of aluminium. A surface of the metal substrate has a plurality of micro-nano holes and a diameter of the micro-nano holes is smaller than 300 nm. The method of treating a heat sinking element includes performing an oxidation process and an etching process on the metal substrate so as to form the plurality of micro-nano holes.

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Номер записи: 34

31-05-2012 дата публикации

Arrangement for emitting mixed light

Номер: US20120134134A1

Автор: Hans-Helmut Bechtel, Matthias Wendt, Peter J. Schmidt

Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

An arrangement for emitting mixed light including a primary and secondary radiation with at least one first electroluminescent light-source for emitting first primary radiation, at least one second electroluminescent light-source for emitting second primary radiation, and a light-converting element for absorbing at least one of the primary radiations and re-emitting the secondary radiation. The light-converting element is arranged so that the entire proportion of primary radiation in the mixed light passes through the light-converting element. The light-converting element is a ceramic light-converting material whose microstructure is selected to be such that the color point of the mixed light of primary and second radiation is substantially independent of the angle of viewing.

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Номер записи: 35

07-06-2012 дата публикации

Solid-state light emitting devices and signage with photoluminescence wavelength conversion and photoluminescent compositions therefor

Номер: US20120138874A1

Автор: Bing Dai, Charles Edwards, Jonathan Melman, Xianglong Yuan

Принадлежит: Intematix Corp

A photoluminescent composition (“phosphor ink”) comprises a suspension of particles of at least one blue light (380 nm to 480 nm) excitable phosphor material in a light transmissive liquid binder in which the weight loading of at least one phosphor material to binder material is in a range 40% to 75%. The binder can be U.V. curable, thermally curable, solvent based or a combination thereof and comprise a polymer resin; a monomer resin, an acrylic, a silicone or a fluorinated polymer. The composition can further comprise particles of a light reflective material suspended in the liquid binder. Photoluminescence wavelength conversion components; solid-state light emitting devices; light emitting signage surfaces and light emitting signage utilizing the composition are disclosed.

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Номер записи: 36

14-06-2012 дата публикации

Method for Manufacturing Heat Dissipation Bulk of Semiconductor Device

Номер: US20120149138A1

Автор: Chun-Liang Lin, Kuan-Chun Chen, Yan-Kuin Su

Принадлежит: National Cheng Kung University NCKU

A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.

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Номер записи: 37

28-06-2012 дата публикации

Lens, optoelectronic component comprising a lens and method for producing a lens

Номер: US20120162783A1

Автор: Bert Braune, Thomas Bemmerl, Ulrich Streppel

Принадлежит: OSRAM Opto Semiconductors GmbH

A lens includes a main body and a potting material. The main body includes a first major face, a second major face and at least one cavity arranged on the first major face. The potting material is arranged in the cavity and includes at least one diffuser which scatters radiation of at least one wavelength range.

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Номер записи: 38

28-06-2012 дата публикации

Method and apparatus for depositing phosphor on semiconductor-light emitting device

Номер: US20120164759A1

Автор: Cheol-jun Yoo, Seong-Jae Hong

Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method and apparatus for depositing a phosphor using transfer molding. The method includes: forming a plurality of light-emitting devices on a wafer and rearranging the light-emitting devices on a carrier substrate according to luminance characteristics of the plurality of light-emitting devices by examining the luminance characteristics of the plurality of light-emitting devices; depositing the phosphor on the rearranged light-emitting devices using transfer molding; and separating the light-emitting devices on the carrier substrate.

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Номер записи: 39

05-07-2012 дата публикации

Lead frame for optical semiconductor device, method of producing the same, and optical semiconductor device

Номер: US20120168810A1

Автор: Kazuhiro Koseki, Shin Kikuchi, Yoshiaki Kobayashi

Принадлежит: Furukawa Electric Co Ltd

A lead frame for an optical semiconductor device, having: a layer 2 composed of silver or a silver alloy formed on an electrically-conductive substrate 1 ; a metal oxide layer 3 of a metal other than silver as an outer layer of the layer composed of silver or a silver alloy, wherein the metal oxide layer 3 is colorless and transparent or silver gray in color, and has a thickness thereof from 0.001 to 0.2 μm; a method of producing the same; and an optical semiconductor device utilizing the same.

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Номер записи: 40

05-07-2012 дата публикации

Solid element device and method for manufacturing the same

Номер: US20120171789A1

Автор: Hideaki Kato, Hiroki Watanabe, Kazuya Aida, Koichi Ota, Kunihiro Hadame, Masaaki Ohtsuka, Mitsuhiro Inoue, Naruhito Sawanobori, Ryoichi Tohmon, Satoshi Wada, Yoshinobu Suehiro, Yoshinori Yamamoto

Принадлежит: Sumita Optical Glass Manufacturing Co Ltd, Toyoda Gosei Co Ltd

A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

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Номер записи: 41

12-07-2012 дата публикации

Light emitting device

Номер: US20120175591A1

Автор: Jeong Soon Yim

Принадлежит: Yim Jeong Soon

A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substrate and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer.

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Номер записи: 42

12-07-2012 дата публикации

Led light disposed on a flexible substrate and connected with a printed 3d conductor

Номер: US20120175667A1

Автор: Aaron J. Golle, John Golle, Walter J. Paciorek

Принадлежит: Heilux LLC

An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface.

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Номер записи: 43

19-07-2012 дата публикации

Led with remote phosphor layer and reflective submount

Номер: US20120181565A1

Автор: Aurelien J. F. David, Mark Butterworth, Rafael I. Aldaz, Serge J. Bierhuizen

Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.

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Номер записи: 44

19-07-2012 дата публикации

Adhesive film for light emitting device and method of manufacturing led package using the same

Номер: US20120181571A1

Автор: II Woo Park, Kyu Jin Lee, Na Na Park

Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided is an adhesive film for an LED chip, including: a double-sided adhesive layer having the LED chip adhered to an upper surface thereof and a lead frame adhered to a lower surface thereof; an ultraviolet (UV) cured layer adhered to one surface of the double-sided adhesive layer; and upper and lower cover layers respectively adhered to faces exposed to the exterior of the double-sided adhesive layer and the UV cured layer.

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Номер записи: 45

26-07-2012 дата публикации

Laminating encapsulant film containing phosphor over leds

Номер: US20120187427A1

Автор: Haryanto Chandra

Принадлежит: Philips Lumileds Lighing Co LLC

A process is described for wavelength conversion of LED light using phosphors. LED dies are tested for correlated color temperature (CCT), and binned according to their color emission. The LEDs in each_bin are mounted on a single submount to form an array of LEDs. Various thin sheets of a flexible encapsulant (e.g., silicone) infused with one or more phosphors are preformed, where each sheet has different color conversion properties. An appropriate sheet is placed over an array of LED mounted on a submount, and the LEDs are energized. The resulting light is measured for CCT. If the CCT is acceptable, the phosphor sheet is permanently laminated onto the LEDs and submount. By selecting a different phosphor sheet for each bin of LEDs, the resulting CCT is very uniform across all bins.

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Номер записи: 46

26-07-2012 дата публикации

Light emitting diode device and manufacturing method thereof

Номер: US20120187436A1

Автор: Hsin-Chiang Lin, Pin-Chuan Chen, Wen-Liang Tseng

Принадлежит: Advanced Optoelectronic Technology Inc

A light emitting diode (LED) device includes a substrate, a supporting member, an electrode layer, an LED chip and an encapsulant. The substrate has a first surface and a second surface. The substrate defines a hole extending through the first surface and the second surface. The supporting member is attached to the second surface of the substrate and covers the hole. The supporting member and the substrate cooperatively define a cavity. The electrode layer is arranged on the first surface of the substrate and an inner surface of the cavity. The encapsulant is arranged on the electrode layer and covers the LED chip.

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Номер записи: 47

02-08-2012 дата публикации

Structures and substrates for mounting optical elements and methods and devices for providing the same background

Номер: US20120193659A1

Автор: Matthew Donofrio, Peter S. Andrews

Принадлежит: Cree Inc

Methods are disclosed including generating a substrate surface topography that includes a mounting portion that is higher than a relief portion that defines a perimeter of the mounting portion.

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Номер записи: 48

16-08-2012 дата публикации

Light emitting diode with nanostructures and method of making the same

Номер: US20120205692A1

Автор: Alistair Paul Curd, Valerie Berryman-Bousquet, Wei-Sin TAN

Принадлежит: Individual

A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.

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Номер записи: 49

16-08-2012 дата публикации

Light-Emitting Diode Package Device and Method for Making the Same

Номер: US20120205703A1

Автор: Po-Jen Su

Принадлежит: GENESIS PHOTONICS INC

A light-emitting diode package device includes: a base unit defining a packaging space; a light-emitting diode die that is disposed inside the packaging space to electrically connect to the base unit and that is capable of emitting light; and an encapsulant that is filled in the packaging space to encapsulate the light-emitting diode die and that includes an upper surface to be exposed to external environment, and a plurality of microstructures formed on the upper surface.

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Номер записи: 50

16-08-2012 дата публикации

Phosphor distribution in led lamps using centrifugal force

Номер: US20120206039A1

Автор: Christopher P. Hussell, David T. Emerson

Принадлежит: Cree Inc

A method of manufacturing an LED lamp is disclosed. The method includes admixing an uncured curable liquid resin and a phosphor, dispensing the uncured admixture on an LED chip, centrifuging the chip and the admixture to disperse the phosphor particles in the uncured resin, and curing the resin while the phosphor particles remain distributed.

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Номер записи: 51

30-08-2012 дата публикации

Light-emitting diode element and light-emitting diode device

Номер: US20120217527A1

Автор: Hisataka Ito, Sadahito Misumi, Yasushi Inoue

Принадлежит: Nitto Denko Corp

A light-emitting diode element includes an optical semiconductor layer, an electrode unit to be connected to the optical semiconductor layer, and an encapsulating resin layer that encapsulates the optical semiconductor layer and the electrode unit, the encapsulating resin layer containing a light reflection component.

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Номер записи: 52

06-09-2012 дата публикации

Tunable remote phosphor constructs

Номер: US20120224363A1

Автор: Antony P. Van de Ven

Принадлежит: Individual

A solid state lighting comprising: at least one LED element positioned on a top surface of a substrate or a submount; and a polygonal structure comprising a plurality of edges forming a plurality of facets configured to receive light from the at least one LED element, the polygonal structure comprising a wavelength converting material, wherein the wavelength converting material is remotely positioned from the at least one LED element.

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Номер записи: 53

20-09-2012 дата публикации

Light emitting element and method for manufacturing same

Номер: US20120235117A1

Автор: Katsuhiro Tomioka, Takashi Fukui

Принадлежит: Hokkaido University NUC

Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.

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Номер записи: 54

20-09-2012 дата публикации

Semiconductor light-emitting device and manufacturing method

Номер: US20120235169A1

Автор: Kosaburo ITO, Toshihiro Seko

Принадлежит: Stanley Electric Co Ltd

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer. A wavelength-converted light that is emitted can have a high light-emitting efficiency and a high contrast between a light-emitting and non-light-emitting surface from a small light-emitting surface.

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Номер записи: 55

20-09-2012 дата публикации

Led mesa sidewall isolation by ion implantation

Номер: US20120238046A1

Автор: Atul Gupta, San Yu

Принадлежит: Varian Semiconductor Equipment Associates Inc

A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.

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Номер записи: 56

20-09-2012 дата публикации

Light emitting device including semiconductor nanocrystals

Номер: US20120238047A1

Автор: Alexi Arango, Jean-Michel Caruge, Jonathan E. Halpert, Jonathan Steckel, Moungi G. Bawendi, Seth Coe-Sullivan, Vladimir Bulovic

Принадлежит: Massachusetts Institute of Technology

A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

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Номер записи: 57

27-09-2012 дата публикации

Semiconductor light emitting device and method for manufacturing same

Номер: US20120241792A1

Автор: Akihiro Kojima, Akiya Kimura, Hideo Nishiuchi, Kazuhito Higuchi, Susumu Obata, Toshiya Nakayama, Yoshiaki Sugizaki, Yosuke Akimoto

Принадлежит: Toshiba Corp

According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

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Номер записи: 58

27-09-2012 дата публикации

Methods of fabricating light emitting diode devices

Номер: US20120244652A1

Автор: Ching-Wen Hsiao, Chyi Shyuan Chern, Fu-Wen LIU, Hsin-Hsien Wu, Kuang-Huan Hsu, Yung-Chang Chen

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An embodiment of the disclosure includes a method of fabricating a plurality of light emitting diode devices. A plurality of LED dies is provided. The LED dies are bonded to a carrier substrate. A patterned mask layer comprising a plurality of openings is formed on the carrier substrate. Each one of the plurality of LED dies is exposed through one of the plurality of the openings respectively. Each of the plurality of openings is filled with a phosphor. The phosphor is cured. The phosphor and the patterned mask layer are polished to thin the phosphor covering each of the plurality of LED dies. The patterned mask layer is removed after polishing the phosphor.

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Номер записи: 59

04-10-2012 дата публикации

Semiconductor light-emitting structure

Номер: US20120248405A1

Автор: Chih-Ping Hsu, Der-Wei Tu, Po-Hung Lai, Tai-Chun Wang, Wei-Chih Wen

Принадлежит: Huga Optotech Inc

A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.

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Номер записи: 60

04-10-2012 дата публикации

Light emitting diode device and producing method thereof

Номер: US20120248484A1

Автор: Hisataka Ito, Satoshi Sato, Yasunari Ooyabu, Yuki Shinbori

Принадлежит: Nitto Denko Corp

A method for producing a light emitting diode device includes the steps of preparing a base board; allowing a light semiconductor layer where an electrode portion is provided at one side in a thickness direction to be disposed in opposed relation to the base board, and the electrode portion to be electrically connected to a terminal, so that the light semiconductor layer is flip-chip mounted on the base board; forming an encapsulating resin layer containing a light reflecting component at the other side of the base board so as to cover the light semiconductor layer and the electrode portion; removing the other side portion of the encapsulating resin layer so as to expose the light semiconductor layer; and forming a phosphor layer formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer.

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Номер записи: 61

11-10-2012 дата публикации

Led package structure for increasing the light uniforming effect

Номер: US20120256198A1

Автор: Chia-Lung Hsueh, Chih-Wei Hsieh, Chin-Kai Huang, Dawson Liu, Shih-Min Wu

Принадлежит: Lustrous Tech Ltd

A LED package structure for increasing the light uniforming effect includes a substrate unit, a light emitting unit, a first package unit, and a second package unit. The substrate unit includes at least one substrate body. The light emitting unit includes at least one light emitting element disposed on the at least one substrate body and electrically connected to the at least one substrate body. The first package unit includes a first package resin body formed on the at least one substrate body to cover the at least one light emitting element. The second package unit includes a second package resin body formed on the at least one substrate body to cover the first package resin body. The second package resin body is a light uniforming resin body having a light diffusing material mixed therein, and the second package resin body has an exposed light uniforming surface formed thereon.

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Номер записи: 62

18-10-2012 дата публикации

Led wavelength-converting structure including a thin film structure

Номер: US20120261688A1

Автор: Adam M. Scotch, Darshan KUNDALIYA, Madis Raukas, Yi Zheng

Принадлежит: Osram Sylvania Inc

A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.

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Номер записи: 63

18-10-2012 дата публикации

Wafer Level Packaging of Electronic Devices

Номер: US20120261697A1

Автор: Israel Petronius, Mordehai MARGALIT

Принадлежит: VIAGAN Ltd

Aspects of the invention include an electronic device comprising a first contact point; a metal pad disposed to provide electrical connection to the first contact point; a substrate comprising a first face and a second face opposing the first face of the substrate, the first face of the substrate adjacent a face of the electronic device; and a VIA passing through the substrate from the second face of the substrate to the metal pad, the VIA exhibiting: a pass through extending through the substrate from the first face to the second face; a metal layer disposed within the pass through arranged to provide electrical connectivity to the metal pad from an area adjacent the second face of the substrate; and an electrically insulating first passivation layer disposed between the metal layer and the substrate arranged to provide electrical insulation between the substrate and the metal layer.

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Номер записи: 64

18-10-2012 дата публикации

Phosphor reflecting sheet, light emitting diode device, and producing method thereof

Номер: US20120261700A1

Автор: Hisataka Ito, Toshiki Naito, Tsutomu Nishioka, Yasunari Ooyabu

Принадлежит: Nitto Denko Corp

A phosphor reflecting sheet provides a phosphor layer on one side in a thickness direction of a light emitting diode element and provides a reflecting resin layer at the side of the light emitting diode element. The phosphor reflecting sheet includes the phosphor layer and the reflecting resin layer provided on one surface in the thickness direction of the phosphor layer. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be disposed in opposed relation to the side surface of the light emitting diode element.

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Номер записи: 65

25-10-2012 дата публикации

Semiconductor light emitting device with light extraction structures

Номер: US20120267668A1

Автор: Aurelien J.F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, Jr.

Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV, Philips Lumileds Lighing Co LLC

Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

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Номер записи: 66

01-11-2012 дата публикации

Light emitting diode chip and method of manufacturing the same

Номер: US20120273830A1

Автор: Chia-Hung Huang, Po-Min Tu, Shih-Cheng Huang, Shun-Kuei Yang

Принадлежит: Advanced Optoelectronic Technology Inc

An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.

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Номер записи: 67

08-11-2012 дата публикации

Package carrier and method of manufacturing the same

Номер: US20120279962A1

Автор: Shih-Hao Sun

Принадлежит: Subtron Technology Co Ltd

A method of manufacturing a package carrier is provided. An insulation cover is provided. The insulation cover has an inner surface and an outer surface opposite to each other, a plurality of openings, and a containing space. A patterned metal layer is foamed on the outer surface of the insulation cover. A surface treatment layer is formed on the patterned metal layer. A heat dissipation element is formed in the containing space of the insulation cover and structurally connected to the insulation cover. A thermal-conductive layer is formed on a surface of the heat dissipation element, and a portion of the thermal-conductive layer is exposed by the openings of the insulation cover.

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Номер записи: 68

15-11-2012 дата публикации

White led lighting device, and optical lens

Номер: US20120286314A1

Автор: Fumiaki Koizumi, Yoshinori Shinohara

Принадлежит: Nitto Optical Co Ltd

Disclosed are a white LED lighting device and an optical lens used in it. The white LED lighting device comprises a white LED and an optical lens. The white LED includes: a LED chip which emits blue light: and a fluorescent material which is excited by emission light of the LED chip and converts a wavelength into fluorescence of a complementary color of blue. The optical lens is formed with a scattering light guide which is given uniform scattering power in terms of a volume. The scattering light guide includes scattering particles for the scattering efficiency in a short wavelength range of light to be higher than that in a long wavelength range of light.

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Номер записи: 69

29-11-2012 дата публикации

Systems and Methods Providing Semiconductor Light Emitters

Номер: US20120299019A1

Автор: Chih-Hsuan Sun, Tien-Ming Lin, Wei-Yu Yeh

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board.

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Номер записи: 70

06-12-2012 дата публикации

Vacuum tray and method of manufacturing light emitting device using the same

Номер: US20120309119A1

Автор: Jae Sung You, Jong Sup Song, Tae Gyu Kim

Принадлежит: SAMSUNG ELECTRONICS CO LTD

There is provided a vacuum tray including a pocket part; a seating part being stepped downwardly from a bottom surface of the pocket part and having a light emitting device seated therein; and a cavity part being stepped downwardly from edges of the seating part and having an electrode terminal of the light emitting device accommodated therein. The pocket part may include a plurality of pocket parts having a matrix structure, such that the plurality of pocket parts are arranged in columns and rows.

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Номер записи: 71

27-12-2012 дата публикации

Led module and manufacturing method thereof

Номер: US20120326195A1

Автор: Won Sang Lee, Young Keun Kim

Принадлежит: Daewon Innost Co Ltd

There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror and connecting an LED to the second mirror; and depositing a fluorescent material so as to fill a space formed by the first mirror and the second mirror.

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Номер записи: 72

27-12-2012 дата публикации

Led encapsulation resin body, led device, and method for manufacturing led device

Номер: US20120326197A1

Автор: Seigo Shiraishi, Takashi Ohbayashi

Принадлежит: Panasonic Corp

An LED encapsulation resin body disclosed in the present application includes: a phosphor; a heat resistance material arranged on, or in the vicinity of, a surface of the phosphor; and a silicone resin in which the phosphor with the heat resistance material arranged thereon is dispersed.

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Номер записи: 73

03-01-2013 дата публикации

Light emitting device and lighting system with the same

Номер: US20130001615A1

Автор: Shin Kim

Принадлежит: LG Innotek Co Ltd

Embodiments provide a light emitting device including a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a metal filter of an irregular pattern on the light emitting structure, and openings between the irregular patterns in the metal filter.

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Номер записи: 74

10-01-2013 дата публикации

Light emitting device and method for manufacturing same

Номер: US20130009190A1

Автор: Yuhichi Memida

Принадлежит: Individual

A light emitting device comprises: a light emitting element ( 20 ); a first metal board ( 11 ) that includes a mount portion ( 111 ) on which the light emitting element ( 20 ) is mounted and a reflection portion ( 112 ) which is formed outside the mount portion ( 111 ) to reflect light from the light emitting element ( 20 ); a second metal board ( 12 ) that is electrically connected to the light emitting element ( 20 ) via a wire ( 50 ); a metal plated layer ( 15 ) that is formed on a surface of the metal boards ( 11 ), ( 12 ); and a seal resin ( 40 ) that is formed on the metal boards ( 11 ), ( 12 ) to seal at least the light emitting element ( 20 ); wherein at least the reflection portion ( 112 ) is provided with a protection layer ( 35 ) which is lower than the seal resin ( 40 ) in gas permeability, is transparent or has a reflectance near the metal plated layer ( 15 ).

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Номер записи: 75

10-01-2013 дата публикации

Semiconductor device

Номер: US20130009292A1

Автор: Hitoshi Kawasaki

Принадлежит: Toshiba Corp

According to an embodiment, a semiconductor device includes a first frame, a semiconductor element fixed to the first frame, a second frame, a third frame and a resin package. The second frame faces the first frame and is away from the first frame, the second frame being electrically connected to the semiconductor element via a metal wire. The resin package covers the semiconductor element, the first frame, and the second frame. The first frame and the second frame are exposed in one major surface of the resin package. The third frame juxtaposed to one of the first frame and the second frame, the third frame being continuously exposed from the major surface of the resin package to a side surface in contact with the major surface.

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Номер записи: 76

17-01-2013 дата публикации

Method for manufacturing light emitting diode

Номер: US20130017632A1

Автор: Pin-Chuan Chen

Принадлежит: Advanced Optoelectronic Technology Inc

A method for manufacturing LEDs (light emitting diodes) includes steps: providing a substrate; attaching an adhesive layer on the substrate; forming a blocking layer on the adhesive layer, the blocking layer having a plurality of first holes and second holes alternating with and spaced from the first holes; forming a conductive layer including first leads and second leads in the first holes and the second holes; removing the blocking layer; forming a housing layer on the adhesive layer, the housing layer having a plurality of cavities to expose the first leads and second leads; fixing chips on the first leads and electrically connecting the chips with the first and second leads; forming encapsulants in the cavities to seal the chips; and removing the substrate and adhesive layer from the housing layer and the conductive layer.

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Номер записи: 77

24-01-2013 дата публикации

Package and Manufacturing Method of the Same

Номер: US20130020109A1

Автор: Deok Ki Hwang, Jae Chung Lim, Young Ju Han

Принадлежит: LG Innotek Co Ltd

Provided are a package including a first conductive layer on a patterned layer, an insulating layer on the patterned layer burying the first conductive layer, a second conductive layer on an outer surface of the insulating layer, and a third conductive layer in the insulating layer electrically connecting the first conductive layer with the second conductive layer. A substrate is formed by printing or coating a paste- or ink-type insulator and conductor on a patterned layer formed on a sapphire wafer. No void is created between the substrate and LED chip, thus enhancing attachment strength. The ceramic-containing insulator is cured at a low temperature, thereby minimizing contraction of and damage to the wafer when the ceramic is fired. Printing methods utilizing viscous paste or ink solves problems with co-planarity of substrate that occur in existing wafer-to-wafer bonding processes and renders several steps of the existing substrate manufacturing process unnecessary.

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Номер записи: 78

24-01-2013 дата публикации

Light emitting device

Номер: US20130020601A1

Автор: Hisayoshi Daicho, Ken Kato, Kiminori Enomoto, Tatsuya Matsuura

Принадлежит: Koito Manufacturing Co Ltd

A light emitting device is configured to achieve a white color by mixing light from respective phosphors. The light emitting device includes: a light emitting element for emitting ultraviolet or short-wavelength visible light having a peak wavelength in a wavelength range of 380 to 420 nm; a first phosphor excited by the ultraviolet or short-wavelength visible light to emit visible light having a peak wavelength in a wavelength range of 560 nm to 600 nm; a second phosphor excited by the ultraviolet or short-wavelength visible light to emit visible light having a complementary relationship with visible light emitted by the first phosphor; and a light transmitting member which is a light transmitting layer for covering the light emitting element, and has the first phosphor and the second phosphor dispersed therein.

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Номер записи: 79

24-01-2013 дата публикации

Substrate For Integrated Modules

Номер: US20130023072A1

Автор: Hagit Avsian, Moshe Kriman

Принадлежит: DigitalOptics Corp East

A method of fabricating a plurality of components using wafer-level processing can include bonding first and second wafer-level substrates together to form a substrate assembly, such that first surfaces of the first and second substrates confront one another, the first substrate having first electrically conductive elements exposed at the first surface thereof, forming second electrically conductive elements contacting the first conductive elements, and processing the second substrate into individual substrate elements. The second conductive elements can extend through a thickness of the first substrate and can be exposed at a second surface thereof opposite the first surface. The processing can include trimming material to produce the substrate elements at least some of which have respective different controlled thicknesses between first surfaces adjacent the first substrate and second surfaces opposite therefrom.

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Номер записи: 80

07-02-2013 дата публикации

Optoelectronic Component and Method for Producing an Optoelectronic Component

Номер: US20130032820A1

Автор: Ralph Wirth

Принадлежит: Individual

The invention concerns an optoelectronic component ( 1 ) for mixing electromagnetic radiation having different wavelengths, more particularly in the far field. At least one first semiconductor chip ( 3 ) for emitting electromagnetic radiation in a first spectral range is provided on a carrier ( 2 ). Furthermore, at least one second semiconductor chip ( 4, 4 a, 4 b ) for emitting electromagnetic radiation in a second spectral range is provided on the carrier ( 2 ). The first and the second spectral ranges differ from one another. The at least one first semiconductor chip ( 3 ) and the at least one second semiconductor chip ( 4, 4 a, 4 b ) are arranged in a single package. The at least one first semiconductor chip ( 3 ) is optically isolated from the at least one second semiconductor chip ( 4, 4 a, 4 b ) by a barrier ( 5 ). The at least one first semiconductor chip ( 3 ) and the at least one second semiconductor chip ( 4, 4 a, 4 b ) are in each case arranged centosymmetrically about a common center o(Z) of symmetry.

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Номер записи: 81

07-02-2013 дата публикации

Distributed current blocking structures for light emitting diodes

Номер: US20130032847A1

Автор: Chao-Kun Lin, Chih-Wei Chuang

Принадлежит: Bridgelux Inc

An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

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Номер записи: 82

07-02-2013 дата публикации

Light emitting device

Номер: US20130033870A1

Автор: Koji Tasumi, Yoshinobu Suehiro

Принадлежит: Toyoda Gosei Co Ltd

A light emitting device, comprises an element mounting substrate with a circuit pattern at least on an element mounting surface of the element mounting substrate, a light emitting element mounted on the element mounting surface of the element mounting substrate and connected with the circuit pattern, a sealing member that seals the light emitting element and is bonded on the element mounting surface, and a coating layer that covers the element mounting side of the element mounting substrate inside the sealing member, wherein the coating layer has its refractive index smaller than that of the sealing member.

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Номер записи: 83

07-02-2013 дата публикации

Manufacturing method of led package structure

Номер: US20130034920A1

Автор: Chao-Hsiung Chang, Chih-Hsun Ke, Ming-Ta Tsai

Принадлежит: Advanced Optoelectronic Technology Inc

A method for manufacturing a plurality of holders each being for an LED package structure includes steps: providing a base, pluralities of through holes being defined in the base to divide the base into a plurality of basic units; etching the base to form a dam at an upper surface of each of the basic units of the base; forming a first electrical portion and a second electrical portion on each basic unit of the base, the first electrical portion and the second electrical portion being separated and insulated from each other by the dam; providing a plurality of reflective cups each on a corresponding basic unit of the base, each of the reflective cups surrounding the corresponding dam; and cutting the base into the plurality of basic units along the through holes to form the plurality of holders.

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Номер записи: 84

14-02-2013 дата публикации

Light-emitting device and manufacturing method for light-emitting device

Номер: US20130038246A1

Автор: Haruaki Sasano

Принадлежит: Nichia Corp

A light-emitting device includes: a substrate; the metal film at the mounting region on the substrate; a light-emitting part including a plurality of light-emitting elements disposed on the metal film; metal members formed on the substrate, respectively including pad parts and wiring parts, forming a positive electrode and a negative electrode configured to apply a voltage to the light-emitting element through the wiring parts, respectively; and a plating wire connected to the metal film, extended to a side face of the substrate. The metal film and the metal members are independently disposed. The wiring part of the positive electrode and the wiring part of the negative electrode are formed at a circumference of the mounting region. The metal members are formed apart from the circumferential edge of the substrate on the side of the mounting region of the substrate.

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Номер записи: 85

14-02-2013 дата публикации

Nitride-based semiconductor device and method for fabricating the same

Номер: US20130040411A1

Автор: Naomi Anzue, Toshiya Yokogawa

Принадлежит: Panasonic Corp

A method includes the step of preparing a GaN-based substrate 10, the step of forming on the substrate a nitride-based semiconductor multilayer structure including a p-type Al d Ga e N layer (p-type semiconductor region) 26, the p-type Al d Ga e N layer 26 being made of an Al x In y Ga z N semiconductor (x+y+z=1, x≧0, y≧0, z≧0), and a principal surface of the p-type Al d Ga e N layer 26 being an m-plane, the step of forming a metal layer 28 which contains at least one of Mg and Zn on the principal surface of the p-type Al d Ga e N layer 26 and performing a heat treatment, the step of removing the metal layer 28, and the step of forming a p-type electrode on the principal surface of the p-type Al d Ga e N layer 26, wherein the heat treatment causes a N concentration to be higher than a Ga concentration in the p-type Al d Ga e N layer 26.

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Номер записи: 86

21-02-2013 дата публикации

Light emitting device and method for manufacturing the same

Номер: US20130043502A1

Автор: Hiroki Utatsu, Kenichi Koya, Michio Miyawaki, Tadaaki Ikeda

Принадлежит: Panasonic Corp

A light emitting device 10 includes a light emitting element 11 , a package 13 in which the light emitting element 11 is accommodated, and a sealing member 14 configured to seal the light emitting element 11 . The package 13 includes a base 13 B configured to hold the light emitting element 11 and a frame part 13 A vertically standing on the base 13 B so as to surround the light emitting element 11 . The sealing member 14 is embedded in a region surrounded by the frame part 13 A. The frame part 13 A includes a protruding wall 15 upwardly protruding from an upper end surface 132 a of the frame part 13 A and provided so as to surround the light emitting element 11.

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Номер записи: 87

21-02-2013 дата публикации

Wavelength conversion structure, manufacturing method thereof, and light-emitting device comprising the wavelength conversion structure

Номер: US20130043786A1

Автор: Min-Hsun Hsieh, Ming-Chi Hsu, Steve Meng-Yuan Hong, Yi-Jui Huang

Принадлежит: Epistar Corp

A wavelength conversion structure comprises a first phosphor layer and a second phosphor layer formed on the first phosphor layer, wherein the first phosphor layer comprises a plurality of first phosphor particles, and the second phosphor layer comprises a plurality of second phosphor particles. The average particle size of the second phosphor particles is not equal to that of the first phosphor particles.

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Номер записи: 88

21-02-2013 дата публикации

Light emitting diode manufacturing method

Номер: US20130045552A1

Автор: Allen S. Bulick, Binghe Gu, Garo Khanarian, John R. Ell, John W. Lyons, Paul J. Popa, Weijun Zhou

Принадлежит: Rohm and Haas Electronic Materials LLC

A method of making a light emitting diode (LED) having an optical element is provided, comprising: providing a curable liquid polysiloxane/TiO 2 composite, which exhibits a refractive index of >1.61 to 1.7 and which is a liquid at room temperature and atmospheric pressure; providing a semiconductor light emitting diode die having a face, wherein the semiconductor light emitting diode die emits light through the face; contacting the semiconductor light emitting diode die with the curable liquid polysiloxane/TiO 2 composite; and, curing the curable liquid polysiloxane/TiO 2 composite to form an optical element; wherein at least a portion of the optical element is adjacent to the face.

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Номер записи: 89

28-02-2013 дата публикации

Method for sealing light engine module with flip-chip light emitting diode

Номер: US20130048192A1

Автор: Jessie Lee

Принадлежит: PROVISION LIGHTING CO Ltd

The sealing method is to firstly form a circuit layout with electrode contacts on a circuit board and flip-chip light emitting diodes (FCLEDs) are electrically connected to the electrode contacts by adhesive material. After the adhesive material is solidified, a plastic ring is attached to the circuit board to surround the LEDs and cycle dispensing is used to coat fluorescent-powder gel within plastic ring on the exposed sides of the LEDs and on the surface of the circuit board between neighboring LEDs. Then, vacuum de-aerating and baking is conducted and a light engine module is formed. In the present invention, the lateral light from the LEDs forms a light extension area where the coated fluorescent-powder gel there is activated and extended planar light is as such produced. The present invention is therefore able to increase lighting efficiency, light projection angle, light brightness, and uniformity.

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Номер записи: 90

14-03-2013 дата публикации

Overlay circuit structure for interconnecting light emitting semiconductors

Номер: US20130062630A1

Автор: Arun Virupaksha Gowda, Donald Paul Cunningham, Shakti Singh Chauhan

Принадлежит: General Electric Co

A system and method for packaging light emitting semiconductors (LESs) is disclosed. An LES device is provided that includes a heatsink and an array of LES chips mounted on the heatsink and electrically connected thereto, with each LES chip comprising connection pads and a light emitting area configured to emit light therefrom responsive to a received electrical power. The LES device also includes a flexible interconnect structure positioned on and electrically connected to each LES chip to provide for controlLES operation of the array of LES chips, with the flexible interconnect structure further including a flexible dielectric film configured to conform to a shape of the heatsink and a metal interconnect structure formed on the flexible dielectric film and that extends through vias formed in the flexible dielectric film so as to be electrically connected to the connection pads of the LES chips.

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Номер записи: 91

14-03-2013 дата публикации

Method for fabricating light emitting diode (led) devices having output with selected characteristics

Номер: US20130062639A1

Автор: Jui-Kang Yen, Trung Tri Doan

Принадлежит: SemiLEDs Optoelectronics Co Ltd

A method for fabricating a light emitting diode (LED) device includes the steps of forming (or providing) a plurality of LED dice, forming a plurality of wavelength conversions layers, and then evaluating at least one electromagnetic radiation emission characteristic of each LED die and at least one color characteristic of each wavelength conversion layer. The method also includes the steps of comparing the evaluated characteristic of each LED die and the evaluated characteristic of each wavelength conversion layer to a database, selecting a selected LED die and a selected wavelength conversion layer based on the evaluating and comparing steps, and then attaching the selected wavelength conversion layer to the selected LED die.

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Номер записи: 92

14-03-2013 дата публикации

High thermal conductivity and low degradation die attach with dual adhesive

Номер: US20130062655A1

Автор: Bit Tie Chan, Keat Chuan Ng, Kheng Leng Tan

Принадлежит: Avago Technologies ECBU IP Singapore Pte Ltd

A package for a light source, a semiconductor device, and methods of manufacturing the same are disclosed. In particular, a Light Emitting Diode (LED) dice is attached to a bonding pad of the light source package by two discrete types of different adhesives. One of the adhesives may be curable under exposure to Ultraviolet (UV) light and the other adhesive may be cured under thermal radiation, but is stable when exposed to UV light.

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Номер записи: 93

14-03-2013 дата публикации

Method and system for fabricating light emitting diode (led) dice with wavelength conversion layers having controlled color characteristics

Номер: US20130065327A1

Автор: Georg Soerensen, Jui-Kang Yen, Mark Ewing Tuttle

Принадлежит: SemiLEDs Optoelectronics Co Ltd

A method for fabricating light emitting diode (LED) dice includes the steps of coating a transparent substrate with a wavelength conversion material, continuously evaluating a correlated color temperature (CCT) of the output electromagnetic radiation produced by the wavelength conversion material and comparing the correlated color temperature (CCT) to a target correlated color temperature (CCT), and controlling the coating step responsive to feedback from the evaluating and comparing step to adjust the correlated color temperature (CCT) to achieve the target correlated color temperature (CCT). A system for fabricating light emitting diode (LED) dice includes a coating system, a monitoring system, and a control system configured to control the coating system to adjust the correlated color temperature (CCT) of the wavelength conversion material on the transparent substrate to achieve the target correlated color temperature (CCT).

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Номер записи: 94

21-03-2013 дата публикации

Nitride semiconductor device

Номер: US20130072010A1

Автор: Giichi Marutsuki, Kentaro Watanabe, Shunsuke Minato

Принадлежит: Nichia Corp

A nitride semiconductor device includes a silicon substrate, a nitride semiconductor layer formed on the silicon substrate, and metal electrodes formed in contact with the silicon substrate. The metal electrodes has first metal layers which are formed in a shape of discrete islands and in contact with the silicon substrate, and second metal layers which are in contact with the silicon substrate exposed among the islands of the first metal layers and are formed to cover the first metal layers. Further, the second metal layers are made of a metal capable of forming ohmic contact with silicon, and the first metal layers are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer.

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Номер записи: 95

04-04-2013 дата публикации

Light Emitting Diode Packaging Structure and Method of Fabricating the Same

Номер: US20130082292A1

Автор: Chien-Hung Ho, Shen-Li Hsiao, Shih-Long Wei

Принадлежит: Viking Tech Corp

A method of fabricating alight emitting diode packaging structure provides a metallized ceramic heat dissipation substrate and a reflector layer, and the metallized ceramic heat dissipation substrate is bonded with the reflector layer through an adhesive. The reflector layer has an opening for a surface of the metallized ceramic heat dissipation substrate to be exposed therefrom. The reflector layer may be formed with ceramic or polymer plastic material, to enhance the refractory property and the reliability of the package structure. In addition, the packaging structure of the present invention may make use of existing packaging machine for subsequent electronic component packaging, without increasing the fabrication cost.

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Номер записи: 96

04-04-2013 дата публикации

Led light disposed on a flexible substrate and connected with a printed 3d conductor

Номер: US20130082298A1

Автор: Aaron J. Golle, John Golle, Walter J. Paciorek

Принадлежит: Heilux LLC

An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface.

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Номер записи: 97

11-04-2013 дата публикации

Light emitting device and light unit having the same

Номер: US20130087817A1

Автор: Joong In An, Sung Min Kong

Принадлежит: LG Innotek Co Ltd

A light emitting device includes a body having a first recess; a barrier section having a second recess and a third recess, protruding upward over a bottom surface of the first recess, and dividing the bottom surface of the first recess into a first region and a second region; a first light emitting diode disposed in the first region; a second light emitting diode disposed in the second region; a first lead electrode disposed in the first region; a second lead electrode disposed in the second region; a first wire electrically connecting the first lead electrode to the second light emitting diode through the second recess; and a second wire electrically connecting the second lead electrode to the first light emitting diode through the third recess.

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Номер записи: 98

18-04-2013 дата публикации

Optoelectronic Component and Method for Producing an Optoelectronic Component and a Compound Structure

Номер: US20130092966A1

Автор: Albert Schneider, Harald Jaeger, Michael Zitzlsperger

Принадлежит: OSRAM Opto Semiconductors GmbH

An optoelectronic component includes a housing. At least one semiconductor chip is arranged in the housing. The semiconductor chip includes an active layer suitable for producing or detecting electromagnetic radiation. A casting compound at least partially surrounds the semiconductor chip. Reflective particles are embedded in the casting compound.

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Номер записи: 99

18-04-2013 дата публикации

Thick window layer led manufacture

Номер: US20130095581A1

Автор: Ching-Hua Chiu, Hung-Wen Huang, Jung-Tang Chu, Yea-Chen Lee

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

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Номер записи: 100