ИНТЕЛЛЕКТУАЛЬНАЯ АВТОМАТИЧЕСКИ ЗАКРЫВАЮЩАЯСЯ ДВЕРЬ

Настоящее изобретение относится к автоматически закрывающейся двери для закрытия зоны (3), по меньшей мере, частично определенной рамой, причем указанная автоматически закрывающаяся дверь содержит:(A) моторизованный приводной механизм (10), предназначенный для перемещения переднего края (1L) створки (1) в первом направлении (α) для закрытия указанной зоны, определенной в указанной раме, и во втором направлении (β) для открытия указанной зоны;(B) ячейки (5) обнаружения на основе использования волн, предназначенные для обнаружения присутствия препятствия в зоне, определенной рамой; и/или(C) дополнительно или альтернативно, детектор (6) удара, предназначенный для обнаружения события удара, происшедшего с передним краем створки,(D) процессор (ЦП), запрограммированный на выполнение следующих операций:(a) при открытии зоны первый раз путем перемещения переднего края створки в указанном втором направлении (β) поддерживание зоны, открытой в течение времени открытия t1, после чего(b) закрытие створки ...

ИНТЕЛЛЕКТУАЛЬНАЯ АВТОМАТИЧЕСКИ ЗАКРЫВАЮЩАЯСЯ ДВЕРЬ

СВЕТОИЗЛУЧАЮЩЕЕ ДИОДНОЕ УСТРОЙСТВО СПЕЦИАЛЬНОЙ ФОРМЫ ДЛЯ УЛУЧШЕННОЙ ЭФФЕКТИВНОСТИ ИСПУСКАНИЯ СВЕТА

СПОСОБ НАНЕСЕНИЯ УСТРОЙСТВА ОСВЕЩЕНИЯ НА ПОВЕРХНОСТЬ И ПОВЕРХНОСТЬ ОСВЕЩЕНИЯ

Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Es wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterchips (1) angegeben, umfassend die folgenden Schritte: Bereitstellen einer Halbleiterschichtenfolge (10), Anordnen einer metallischen Spiegelschicht (21) an einer Oberseite der Halbleiterschichtenfolge (10), Anordnen einer Spiegelschutzschicht (3) zumindest an freiliegenden Seitenflächen (21c) der Spiegelschicht, teilweise Entfernen der Halbleiterschichtenfolge (10), wobei die Spiegelschicht (21) Öffnungen (23) zur Halbleiterschichtenfolge (10) hin aufweist, die in lateralen Richtungen (l) von der Spiegelschutzschicht (3) umrandet werden, das teilweise Entfernen der Halbleiterschichtenfolge (10) im Bereich der Öffnungen (23) der Spiegelschicht (21) erfolgt, das Anordnen der Spiegelschutzschicht (3) an den freiliegenden Seitenflächen (21c) der Spiegelschicht (21) selbstjustierend erfolgt.

Monolithische integrierte Photonik mit lateralem Bipolar und Bicmos

Nach einem Bilden eines ersten Grabens, der sich durch eine obere Halbleiterschicht und eine vergrabene Isolator-Schicht hindurch und in ein Handhabungssubstrat eines Halbleiter-auf-Isolator(SOI)-Substrats hinein erstreckt, wird innerhalb des ersten Grabens ein Stapel aus Material für einen dielektrischen Wellenleiter gebildet, der eine untere dielektrische Mantelschicht, eine Kernschicht sowie eine obere dielektrische Mantelschicht beinhaltet. Als nächstes wird in einem verbliebenen Teilbereich der oberen Halbleiterschicht wenigstens ein lateraler Bipolartransistor (BJT) gebildet, der aus einem pnp-BJT, einem npn-BJT oder einem Paar von komplementären pnp-BJT und npn-BJT bestehen kann. Nach einem Bilden eines zweiten Grabens, der sich durch den Stapel aus Material für den dielektrischen Wellenleiter hindurch erstreckt, um einen Teilbereich einer Bodenfläche des ersten Grabens wieder freizulegen, wird in dem zweiten Graben eine Laserdiode gebildet.

Strahlungsemittierender Halbleiterchip, optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip und Verfahren zur Beschichtung eines strahlungsemittierenden Halbleiterchips

Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Es wird ein optoelektronisches Halbleiterbauelement angegeben, dass einen Halbleiterkörper (10) mit einer auf einer Hauptfläche des Halbleiterkörpers (10) aufgebrachten Kontaktmetallisierung (20) und eine Schutzschicht (30), die den Halbleiterkörper (10) und die Kontaktmetallisierung (20) teilweise bedeckt, ein an den Halbleiterkörper (10) seitens der Hauptfläche stoffschlüssig angefügtes Substrat (40), eine Aussparung (50) und eine innerhalb der Aussparung (50) angeordnete Anschlussschicht (60) aufweist. Die Aussparung (50) und die Anschlussschicht (60) erstrecken sich von einer dem Halbleiterkörper (10) abgewandten Seite des Substrats (40) durch das Substrat (40) und die Schutzschicht (30) bis zu der Kontaktmetallisierung (20), und die Anschlussschicht (60) kontaktiert die Kontaktmetallisierung (20) elektrisch.

Konverterbauteil für eine optoelektronische Leuchtvorrichtung

Die Erfindung betrifft ein Konverterbauteil für eine optoelektronische Leuchtvorrichtung, umfassend: – einen Hilfsträger, wobei – ein Schichtenstapel umfassend eine Basisschicht und eine Konverterschicht auf einer Oberfläche des Hilfsträgers gebildet ist. Die Erfindung betrifft ferner ein Verfahren zum Herstellen eines Konverterbauteils sowie eine optoelektronische Leuchtvorrichtung.

BAUTEIL FÜR EIN DISPLAY UND VERFAHREN ZUR HERSTELLUNG EINES BAUTEILS

Es wird ein Bauteil (100) mit einem Träger (10) und einer Mehrzahl von Halbleiterchips (2) angegeben, bei dem der Träger eine einlagig ausgeführte und elektrisch leitfähige Trägerschicht (1) aufweist, wobei die Trägerschicht (1) strukturiert ausgebildet ist und eine Mehrzahl von Teilschichten (1A, 1B) aufweist. Die Trägerschicht weist eine Montagefläche (1M) auf, auf der die Halbleiterchips (2) angeordnet sind, wobei die Halbleiterchips (2) von der Trägerschicht (1) mechanisch getragen und mit den Teilschichten (1A, 1B) elektrisch leitend verbunden sind. Der Träger (10) weist eine gemeinsame Elektrode für Halbleiterchips (2) einer Gruppe aus mehreren Halbleiterchips (2) auf, wobei die gemeinsame Elektrode durch eine der Teilschichten (1A, 1B) oder durch mehrere miteinander im elektrischen Kontakt stehende Teilschichten (1A, 1B) der Trägerschicht (1) gebildet ist.Des Weiteren wird ein Verfahren zur Herstellung eines solchen Bauteils (100) angegeben.

An optical device and a method of fabricating an optical device

An optical device and a method of fabricating an optical device

An electro-optical device comprising: a photonic crystal structure with a quantum light emitting device situated at the defect site of the photonic crystal. An electrode is electrically contacted to only the defect part of the photonic crystal structure. The device may emit single photons or entangled photon pairs and can be used in quantum optical circuits for quantum computing applications.

Enchanced colour conversion and collimation of micro-led devices

Multicolour light emitting structure

Light emitting device, light emitting diode package, backlight unit, and liquid crystal display

SEMICONDUCTOR LIGHT EMISSION EQUIPMENT ON GALLIUM NITRIDE BASIS AND PROCEDURE FOR THE PRODUCTION OF THE SAME.

Light Emitting Diode, Method Of Manufacturing The Same, And Method Of Manufacturing Light Emitting Diode Module

Method Manufacturing Light Emitting Diode Having Supporting Lay7Er Attached To Temporary Adhesive

Method for preparing quantum dot colored film substrate and quantum dot colored film substrate

LIGHT EMITTING DIODE CHIP AND METHO FOR FABRICATNG SAME

OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES

SEMICONDUCTOR STRUCTURE WITH SWITCHABLE TRANSMISSION AREAS, METHOD OF MAKING SUCH A STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING SUCH A STRUCTURE

COLLIMATED LIGHT SOURCE, ITS MANUFACTURING METHOD AND ITS USE FOR THE DELIVERY OF SINGLE PHOTONS

L'invention porte sur une source de lumière collimatée, notamment une source de photons uniques. La source comprend une cavité en forme de pyramide inversée formée dans un substrat. Au moins une boîte quantique (Bq) apte à émettre de la lumière selon un front d'onde est agencée au niveau du sommet de la pyramide inversée et une structure à gradient d'indice (4) remplit la cavité. Cette structure présente un indice effectif qui décroit du centre de la base vers les flancs. De telle manière, le front d'onde de la lumière émise par l'au moins une boîte quantique est aplani. L'invention s'étend au procédé de fabrication d'une telle source, et à son utilisation pour l'émission d'une séquence de photons uniques.

GUIDED LIGHT SOURCE, ITS MANUFACTURING METHOD AND ITS USE FOR THE DELIVERY OF SINGLE PHOTONS

L'invention porte sur une source de lumière guidée (1) qui comprend : - au moins une boîte quantique (2) associée à un guide d'onde discoïde (3) de manière à assurer une propagation cylindrique d'un front d'onde émis par l'au moins une boite quantique dans le guide d'onde discoïde ; - un guide d'onde annulaire (5) entoure le guide d'onde discoïde et qui présente un réseau de couplage (T) formé sur sa périphérie intérieure pour recevoir ledit front d'onde en incidence normale ; - un guide d'onde de sortie (6) optiquement couplé au guide d'onde annulaire, dans lequel est guidé ledit front d'onde. L'invention s'étend au procédé de fabrication d'une telle source, et à son utilisation pour l'émission d'une séquence de photons uniques.

광원 장치

... (과제) LED 소자의 휘도 저하가 억제된 광원 장치의 제공. (해결 수단) 본 발명의 광원 장치(1)는 LED 소자가 실장되는 기판부와, LED 소자의 둘레를 둘러싸면서 LED 소자의 광 출사 방향으로 개구한 형태를 이루고, 내측에 LED 소자가 수용되는 둘레벽부와, LED 소자가 봉입되도록 둘레벽부의 내측에 충전되는 봉입 수지와, 둘레벽부로 둘러싸인 부분의 봉입 수지의 표면으로 이루어지고, LED 소자로부터 출사된 광을 봉입 수지의 외부로 출사시키는 광 출사면을 가지는 LED 패키지(22)와, LED 패키지를 수용하고, 질소 가스가 충전되는 수용실(3)과, 광 출사면을 덮도록 LED 패키지(22)의 표면에 형성되는 불소계 코팅막(21)을 가진다.

UV-경화성 실리콘 조성물 및 이를 함유하는 먼지 방지 코팅 조성물

... 자외선 조사 경화성 (UV-경화성) 실리콘 조성물의 제조 방법 및 그러한 방법에 의해 제조된 UV-경화성 실리콘 조성물이 각종 실시 형태로 제공된다. 그러한 UV-경화성 실리콘 조성물을 이용한 먼지 방지 코팅의 제조 방법 및 그러한 방법에 의해 제조된 그러한 UV-경화성 실리콘 조성물을 이용한 먼지 방지 코팅이 각종 실시 형태로 제공된다. UV-경화성 실리콘 조성물은 LED 패키지, 봉지재, 램프, 조명 기구, 광학 용품 등을 위한 실리콘계 용품의 코팅에 사용될 수 있으며, 먼지의 픽업을 실질적으로 감소하고/하거나 제거하고 실리콘계 용품의 광학 성질을 개선시킨다.

Display including nano-scale LED and method for manufacturing thereof

Light emitting device package

LIGHT EMITTING DIODE CHIP AND A MANUFACTURING METHOD THEREOF CAPABLE OF IMPROVING THE CURRENT DISTRIBUTION PERFORMANCE OF A LIGHT EMITTING CELL

PURPOSE: A light emitting diode chip and a manufacturing method thereof are provided to improve luminous efficiency in a package by transmitting light generated in an active layer and reflecting light whose wavelength is converted. CONSTITUTION: A light emitting structure(30) is located on the upper side of a substrate(21). A light emitting structure includes a first conductive semiconductor layer(25), a second conductive semiconductor layer(29), and an active layer(27). A buffer layer(23) is interposed between the substrate and the first conductive semiconductor layer. A transparent electrode layer(31) is located on a second conductive semiconductor layer. A first electrode pad(33) is located on the first conductive semiconductor layer. A bottom structure(43) is located on the lower side of the substrate. COPYRIGHT KIPO 2012 ...

LED MANUFACTURING METHOD, LED MANUFACTURING DEVICE, AND LED

Nitride semiconductor ultraviolet light emitting device and method for manufacturing same

A nitride semiconductor ultraviolet light emitting device 1 which is obtained by flip-chip mounting a nitride semiconductor ultraviolet light emitting element 10 on a base 30 and resin sealing the element with use of an amorphous fluororesin that has, as a terminal functional group, a perfluoroalkyl group, said nitride semiconductor ultraviolet light emitting element 10 comprising a sapphire substrate 11, a semiconductor multilayer part 12 that is composed of AlGaN semiconductors laminated on the surface of the sapphire substrate 11, an n electrode 13, a p electrode 14 and a backside coating layer 15 that is formed on the back surface of the sapphire substrate 11 and transmits ultraviolet light. The backside coating layer 15 has openings 16, through each of which a part of the back surface of the sapphire substrate 11 is exposed; and the openings 16 are uniformly dispersed or distributed on the back surface of the sapphire substrate. An opening 16 that is perpendicular to the back surface ...

Light-emitting device

A light-emitting device including a light-emitting unit, an electrode unit, and an insulating unit is provided. The light-emitting unit includes an illuminator and a packaging sealant. The illuminator generates an optical energy by way of electroluminescence, and the packaging sealant is formed on a part of a surface of the illuminator. The electrode unit includes a first electrode and a second electrode respectively formed on the surface of the illuminator on which no packaging sealant is formed. The insulating unit is formed on the surface of the light-emitting unit and includes a first insulating layer protruded between the first electrode and the second electrode. When the light-emitting device of the invention is electrically connected to an external circuit board using solder, the insulating unit effectively separates the elements to avoid the elements being short-circuited by the solder overflowing.

Substrate for semiconductor light-emitting element, semiconductor light-emitting element, and method of forming thereof

A method of forming a semiconductor light-emitting element includes a particle aligning step for aligning a plurality of particles M on a substrate S as a single layer, a particle etching step for providing spaces between the particles M by dry-etching the plurality of aligned particles M in a condition where the particles M are etched and the substrate S is not substantially etched, and a substrate etching step for forming unevenness on a surface X of the substrate S by dry-etching the substrate S using a plurality of particles M1after the particle etching step as etching masks.

Light emitting diode device and manufacturing method thereof

A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer having a bottom surface facing a top of the light emitting diode chip, and an interlayer having a first portion and a second portion. The first portion is between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer. The second portion extends from the first portion and connects a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface and a curved surface. The linear surface substantially aligns with a side surface of the wavelength conversion layer. The curved surface has one end connected to the linear surface and the other end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer.

Method of purifying color of a led wafer

LIGHT EMITTING LAMINATE AND METHOD OF MAKING THEREOF

A laminate capable of emitting light comprises a reflective layer. The reflective layer increases the amount of light output from the laminate. A lighting apparatus containing the improved laminate is also provided.

HIGHLY REFLECTIVE FLIP CHIP LED DIE

An LED die (40) includes an N-type layer (18), a P-type layer (22), and an active layer (20) epitaxially grown over a first surface of a transparent growth substrate (46). Light is emitted through a second surface of the substrate opposite the first surface and is wavelength converted by a phosphor layer (30). Openings (42, 44) are etched in the central areas (42) and along the edge (44) of the die to expose the first surface of the substrate (46). A highly reflective metal (50), such as silver, is deposited in the openings and insulated from the metal P-contact. The reflective metal may conduct current for the N- type layer by being electrically connected to an exposed side of the N-type layer along the inside edge of each opening. The reflective metal reflects downward light emitted by the phosphor layer to improve efficiency. The reflective areas provided by the reflective metal may form 10%-50% of the die area.

LED WAVELENGTH-CONVERTING PLATE WITH MICROLENSES

A wavelength-converting plate for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting plate includes microlenses deposited thereon. The microlenses may have an index of refraction different from the index of refraction of the wavelength-converting plate. The microlenses on the top surface of the plate increase lumen output in a direction normal to the top surface of a wavelength-converting plate.

METHOD OF OPTIMIZING THE QUANTUM EFFICIENCY OF A PHOTODIODE

A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer. The quantum efficiency of the photodiode is optimized by: determining, for the infrared wavelength, first thicknesses of the second layer corresponding to maximum absorptions of the photodiode, and selecting, from among the first thicknesses, a desired thickness, eoxD, so that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values.

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

There is provided a light emitting device including a light emitting element, a covering member for covering a side surface of the light emitting element, and a light-transmissive member disposed on upper surfaces in a light emitting direction of the light emitting element and the covering member and having an end face on substantially the same plane as an end face of the covering member, wherein the covering member has a recess portion or a convex portion on the upper surface, a light emitting surface of the light emitting element and an upper surface other than the recess portion or the convex portion of the covering member are arranged on substantially the same plane, and the light-transmissive member is provided in contact with the recess portion or the convex portion.

Light-emitting device with reflective layer

A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

Asymmetrically shaped light-emitting device, backlight module using the same, and method for manufacturing the same

An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.

Light-emitting diode and method of manufacturing the same

A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window.

Light emitting diode (LED) die module, LED element with the LED die module and method of manufacturing the LED die module

A light emitting diode (LED) die module includes an LED die and a guiding layer formed on the LED die. The guiding layer includes a first portion, a second portion and a third portion. The first portion and the second portion are positioned at two edges of the surface of the LED die opposite to each other. The third portion is connected between the first portion and the second portion and divides the surface into a first electrically connecting area and a second electrically connecting area. The first portion, the second portion and the third portion defines a first opening and a second opening. The first opening and the second opening face two opposite directions. The present disclose also provides an LED element with the LED die module and a method of manufacturing the LED die module.

LENS, LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LENS AND THE LIGHT EMITTING DEVICE

A lens includes a cover part and a light-shielding part. The cover part includes a lens part, a connection part extending downward from lateral sides of the lens part, and one or more flange parts each extending outward from a lower-end portion of the connection part. The lens part and the connection part define a recess having an opening facing downward. The flange parts extend outward from a periphery of the opening of the recess. The lens part, the flange parts, and the connection part are formed of a thermosetting first resin and continuous to one another. The light-shielding part covers outer lateral surface of the connection part and is formed of a thermosetting second resin having a greater light-absorptance or a greater light-reflectance than the thermosetting first resin. The flange parts have a greater thickness than the connection part.

Semiconductor chips and method for producing semiconductor chips

A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

LIGHT EMITTING PACKAGE HAVING A GUIDING MEMBER GUIDING AN OPTICAL MEMBER

A light emitting device package including a base including a top flat surface; an insulating layer on the base; a light emitting diode on the base; an optical member comprising a light transmissive material such that light emitted from the light emitting diode passes therethrough; a guiding member to guide the optical member, the guiding member having a ring shape; an electrical circuit layer electrically connected to the light emitting diode, the electrical circuit layer including an electrode portion and an extended portion, the electrode portion disposed inside the guiding member and electrically connected to the light emitting diode, the extended portion extended from the electrode portion to outside the guiding member; and an electrode layer on the electrode portion of the electrical circuit layer and electrically connected to the light emitting diode.

Light emitting device with LED stack for display and display apparatus having the same

A light emitting device for a display includes a substrate and first, second, and third LED sub-units, a first transparent electrode between the first and second LED sub-units and in ohmic contact with the first LED sub-unit, a second transparent electrode between the second and third LED sub-units and in ohmic contact with the second LED sub-unit, a third transparent electrode between the second transparent electrode and the third LED sub-unit and in ohmic contact with the third LED sub-unit, at least one current spreader connected to at least one of the first, second, and third LED sub-units, electrode pads disposed on the substrate, and through-hole vias formed through the substrate, in which at least one of the through-hole vias is formed through the substrate and the first and second LED sub-units.

Light emitting structure

A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

LED DBR structure with reduced photodegradation

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

Light emitting package having a guiding member guiding an optical member

A light emitting device package can include a base including a flat top surface; first and second electrical circuit layers on the flat top surface; a light emitting diode on a region of the flat top surface; an optical member to pass light; and a guiding member having a closed loop shape surrounding the region for guiding the optical member, in which the first and second electrical circuit layers respectively include first and second portions disposed between the flat top surface and a bottom surface of the guiding member, in which the first and second electrical circuit layers respectively include first and second extension portions that respectively extend from the first and second portions to locations outside of an outer edge of the guiding member in different directions.

Passivation for a semiconductor light emitting device

In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN INORGANIC OPTOELECTRONIC SEMICONDUCTOR COMPONENT

An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer.

LIGHT EMITTING DIODE DEVICE

An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

SEMICONDUCTOR LIGHT-EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME

A semiconductor light-emitting device includes a light-emitting pixel region and a pad region, and includes light-emitting structures, a partition wall structure, a passivation structure, and a fluorescent layer, positioned in the light-emitting pixel region, and a pad unit positioned in the pad region. The partition wall structure includes partition walls defining pixel spaces. The passivation structure surrounds the partition walls and includes a first passivation layer including a first insulating material and a second passivation layer including a second insulating material different from the first insulating material. The passivation structure includes a first portion on a top surface of the partition walls, a second portion on a sidewall of the partition walls, and a third portion between the light-emitting structures and the fluorescent layer. A first thickness of the first portion is less than or equal to a second thickness of the second portion.

Light emitting device and method of manufacturing same

A light emitting device includes a light emitting element, a light transmissive member, and a cover member. The light transmissive member is disposed on an upper face of the light emitting element. The cover member covers a lateral face of the light emitting element and a lateral face of the light transmissive member, and includes first and second cover members. The first cover member is disposed adjacent to the lateral face of the light emitting element and the lateral face of the light transmissive member, and contains a first light reflecting material and a fluorine-based first resin. The second cover member covers the first cover member, and contains a second light reflecting material and a second resin. A refractive index difference between the first light reflecting material and the first resin is larger than a refractive index difference between the second light reflecting material and the second resin.

Micro light emitting diode apparatus and method of fabricating micro light emitting diode apparatus

A micro light emitting diode (micro LED) apparatus. The micro LED apparatus includes a thin film transistor array substrate including a plurality of thin film transistors; an array of a plurality of micro LEDs on the thin film transistor array substrate, a respective one of the plurality of micro LEDs being connected to a respective one of the plurality of thin film transistors; and a plurality of microcavities respectively on a side of the plurality of micro LEDs away from the thin film transistor array substrate. The plurality of microcavities include a first microcavity having a first optical path length and a second microcavity having a second optical path length different from the first optical path length. The first microcavity is configured to allow a light of a first color to transmit there-through. The second microcavity is configured to allow a light of a second color to transmit there-through.

ENHANCED LIGHT OUTPUT FROM A LED CONTAINING LAMINATE

A laminate capable of emitting light comprises a reflective layer. The reflective layer increases the amount of light output from the laminate. A lighting apparatus containing the improved laminate is also provided.

LED PACKAGE

A LED package comprises an LED chip, a reflective structure which encloses the LED chip, a wavelength conversion structure placed on the LED chip, and an absorbing structure which encloses or is placed on the reflective structure.

METHOD FOR FABRICATING GRAPHENE LIGHT EMITTING TRANSISTOR

A method is provided for fabricating a graphene light emitting transistor. The method includes: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate and the gate electrode; forming a graphene oxide layer on the gate insulating layer; reducing two ends of the graphene oxide layer to respectively form a source electrode and a drain electrode made of graphene; forming a graphene quantum dot layer on an unreduced part of the graphene oxide layer, the source electrode, and the drain electrode; and forming a water and oxygen resistant layer on the graphene quantum dot layer.

OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

Optoelectronic device

An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.

ULTRA-DENSE ARRAY OF LEDS WITH HALF CAVITIES AND REFLECTIVE SIDEWALLS

In one approach, an LED array uses a combination of a half cavity and straight reflective sidewalls to improve the power distribution so that more light falls within the collection angle of the projection optics. From the bottom upwards, the LEDs in the array include a reflector, a thinner p-layer and a thicker n-layer. An active region (such as quantum wells) between the p-layer and the p-layer generates light. Without additional structures, the generated light would have an isotropic distribution and not much of the light would fall within the collection angle of the projection optics. However, the bottom reflector and p-layer form a half cavity for the light emitted from the active region. This alters the angular power distribution. Straight reflective sidewalls extending from the active region upwards into the n-layer further reflect light from the altered power distribution into the collection angle of the projection optics.

LED with stress-buffer layer under metallization layer

Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate. The patterned surface improves light extraction. The LED layers include a p-type layer and an n-type layer. The LED layers are etched to expose the n-type layer. One or more first metal layers are patterned to electrically contact the p-type layer and the n-type layer to form a p-metal contact and an n-metal contact. A dielectric polymer stress-buffer layer is spin-coated over the first metal layers to form a substantially planar surface over the first metal layers. The stress-buffer layer has openings exposing the p-metal contact and the n-metal contact. Metal solder pads are formed over the stress-buffer layer and electrically contact the p-metal contact and the n-metal contact through the openings in the stress-buffer layer. The stress-buffer layer acts as a buffer to accommodate differences in CTEs of the solder pads and underlying layers.

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

Flip-chip light emitting diode structure and manufacturing method thereof

The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are ...

METHOD FOR INTEGRATING A LIGHT EMITTING DEVICE

Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

Forming method of flip-chip light emitting diode structure

The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.

DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.

THREE-IN-ONE RGB MINI-LED MANUFACTURING METHOD

A three-in-one RGB mini-LED production method, in which a second electrical semiconductor layer (12), a multiple quantum well layer (13) and a first electrical semiconductor layer (11) are sequentially arranged on a substrate (10) at first; then depositing a plurality of mirrors (14) on the first electrical semiconductor layer (11); etching the first electrical semiconductor layer (11) and the multiple quantum well layer (13); depositing a whole layer of a protective layer (16); forming a first metal electrode (20) and a second metal electrode (30); forming a partition, an RGB quantum dot filter (44) is attached to the bottom of the substrate (10), and then cutting.

Volumenemitter und Verfahren zu dessen Herstellung

Es wird ein Volumenemitter (10) mit einem Träger (1) und einem auf dem Träger angeordneten Halbleiterkörper (2) angegeben, wobei der Halbleiterkörper im Betrieb des Volumenemitters zur Erzeugung elektromagnetischer Strahlung eingerichtet ist. Der Träger weist einen Grundkörper (1G) auf, der für die elektromagnetische Strahlung durchlässig ausgeführt ist. Der Grundkörper weist eine innere Öffnung (3) auf, deren Innenwände (3W) zur Reflexion und/oder zur Streuung der darauf auftreffenden elektromagnetischen Strahlung eingerichtet sind.Des Weiteren wird ein Verfahren zur Herstellung eines solchen Volumenemitters angegeben.

Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung

Es wird ein optoelektronischer Halbleiterchip (1) angegeben, umfassend ein Trägersubstrat (11), eine Halbleiterschichtenfolge (2), die eine Mesastruktur aufweist, eine zwischen dem Trägersubstrat (11) und der Halbleiterschichtenfolge (2) angeordnete Spiegelschicht (6), die Silber aufweist, eine dielektrische Verkapselungsschicht (8), welche zumindest teilweise zwischen der Halbleiterschichtenfolge (2) und dem Trägersubstrat (11) angeordnet ist, wobei die Verkapselungsschicht (8) seitlich neben der Spiegelschicht (6) angeordnet ist und sich in seitlicher Richtung bis in einen Bereich neben der Mesastruktur erstreckt, und eine dielektrische transparente Deckschicht (18), welche einen neben der Mesastruktur angeordneten Tei899l der Verkapselungsschicht (8) und die Halbleiterschichtenfolge (2) zumindest teilweise bedeckt. Weiterhin wird ein Verfahren zur Herstellung des optoelektronischen Halbleiterchips (1) angegeben.

Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

In einer Ausführungsform umfasst der optoelektronische Halbleiterchip (1) eine Halbleiterschichtenfolge (2) mit einer aktiven Schicht (22) zwischen einem ersten (21) und einem zweiten Halbleiterbereich (23) auf einem lichtdurchlässigen Substrat (3). Ein Kontaktgraben (4) erstreckt sich durch die aktive Schicht (22) bis in den ersten Halbleiterbereich (21). Eine erste und eine zweite elektrisch isolierende Spiegelschicht (51, 53) sind zur Reflexion von im Betrieb in der aktiven Schicht (22) erzeugter Strahlung eingerichtet. Ein metallischer Stromsteg (6) ist in dem Kontaktgraben (4) angebracht und zu einer Stromführung entlang des Kontaktgrabens (4) sowie zu einer Bestromung des ersten Halbleiterbereichs (21) vorgesehen. Die erste Spiegelschicht (51) reicht aus dem Kontaktgraben (4) heraus über die aktive Schicht (22) hinweg bis auf eine dem Substrat (3) abgewandte Seite des zweiten Halbleiterbereichs (23). Es ist eine Kontaktschicht (7) zur Stromeinprägung direkt in den ersten Halbleiterbereich ...

Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Es wird ein optoelektronischer Halbleiterchip angegeben, mit einem Halbleiterkörper (10), der einen n-leitenden Bereich (2), einen zur Erzeugung von elektromagnetischer Strahlung vorgesehenen aktiven Bereich (4) und einen p-leitenden Bereich (3) umfasst, einer ersten Spiegelschicht (21), die zur Reflexion der elektromagnetischen Strahlung vorgesehen ist, und einer Verkapselungsschichtenfolge (20), die mit einem elektrisch isolierenden Material gebildet ist, wobei die erste Spiegelschicht (21) an einer Unterseite des p-leitenden Bereichs (3) angeordnet ist, wobei die Verkapselungsschichtenfolge (20) den Halbleiterkörper (10) an seiner Außenfläche stellenweise bedeckt, sich die Verkapselungsschichtenfolge (20) an der Außenfläche des Halbleiterkörpers (10) vom aktiven Bereich (4) entlang dem p-leitenden Bereich (3) bis unterhalb der ersten Spiegelschicht (21) erstreckt und die Verkapselungsschichtenfolge (20) zumindest eine Verkapselungsschicht (12) umfasst, die eine ALD-Schicht ist oder aus ...

Leuchtdiodenchip

Es wird ein Leuchtdiodenchip angegeben, umfassend - einen Halbleiterkörper (1), der einen ersten (1A) und einen zweiten Bereich (1B) aufweist; - eine aktive Zone (2) innerhalb des Halbleiterkörpers (1), die im Betrieb des Leuchtdiodenchips (100) elekoppelfläche (11) emittiert, die zumindest stellenweise durch eine erste Hauptfläche (111) des Halbleiterkörpers (1) gebildet ist; - zumindest einen Graben (3) in dem Halbleiterkörper (1), wobei im Bereich des Grabens Teile des Halbleiterkörpers (1) entfernt sind, wobei - der zumindest eine Graben (3) zumindest bis zur aktiven Zone (2) reicht, - der zumindest eine Graben (3) den ersten Bereich (1A) in lateraler Richtung vollständig umgibt, und - der zweite Bereich (1B) den zumindest einen Graben (3) und den ersten Bereich (1A) in lateraler Richtung vollständig umgibt.

Verfahren zur Herstellung eines Anschlussbereichs eines optoelektronischen Halbleiterchips

OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND VERFAHREN ZUR HERSTELLUNG VON OPTOELEKTRONISCHEN HALBLEITERBAUTEILEN

In einer Ausführungsform umfasst das optoelektronische Halbleiterbauteil (1) eine Vielzahl von Halbleitersäulen (3). An Seitenflächen (37) sind die Halbleitersäulen (3) mindestens zum Teil von einer elektrischen Trennschicht (2) umgeben. Eine Bestromung der Halbleitersäulen (3) erfolgt über mindestens eine erste elektrische Kontaktfläche (41) und mindestens eine zweite elektrische Kontaktfläche (42). Ein erster Teil der Halbleitersäulen (3) ist als Emittersäulen (5) zur Strahlungserzeugung und ein zweiter Teil als nicht strahlende elektrische Kontaktsäulen (4) gestaltet. Die Kontaktsäulen (4) verlaufen durch die Trennschicht (2) hindurch, sodass alle Kontaktflächen (41, 42) auf der gleichen Seite der Trennschicht (2) liegen. Die Kontaktsäulen (4) sind je mit einer elektrisch ohmsch leitenden Außenschicht (43) versehen.

Enhanced light extraction

Light emitting device, light emitting diode package, backlight unit, and liquid crystal display

SILICONE COATED LIGHT-EMITTING DIODE

A silicone coated light-emitting diode and the method for making the silicone coated light-emitting diode.

Optoelectronic component and method for producing an optoelectronic component

Light emitting diode, method of manufacturing same, and method of manufacturing light emitting diode module

Method for color purification of light emitting diode (LED) wafer

Light-emitting device and method for manufacturing same

Manufacturing method of LED deep groove planarization for GaN

The manufacture of the semiconductor light emitting element

Semiconductor light-emitting element and manufacturing method thereof

The light-emitting diode and method of manufacturing the same and method of manufacturing the light-emitting diode module

OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES COMPRISING AT LEAST ONE ZENER DIODE

L'invention porte sur un dispositif optoélectronique (1) comportant des diodes électroluminescentes réalisées en un matériau comportant majoritairement un même composé semiconducteur et agencées de sorte que : - une pluralité de N diodes électroluminescentes (40), N>2, sont connectées en série et aptes à être polarisées en direct ; - au moins une diode électroluminescente (50) est connectée en parallèle à la pluralité des N diodes électroluminescentes (40), et apte à être polarisée en inverse formant ainsi une diode Zener ; - le nombre N desdites diodes électroluminescentes (40) connectées en série étant adapté de sorte que la somme des N tensions de seuil (Vs) soit inférieure à la tension de claquage (Vc) de la diode Zener.

OPTOELECTRONIC DEVICE

발광 디바이스 및 발광 디바이스 통합 방법

... 발광 디바이스들, 및 마이크로 LED 디바이스들을 발광 디바이스에 통합시키는 방법들이 기술된다. 실시예에서, 발광 디바이스는 뱅크 층 내의 반사 뱅크 구조체, 및 뱅크 층의 꼭대기에 있고 반사 뱅크 구조체보다 위에 위치된 전도성 라인을 포함한다. 마이크로 LED 디바이스는 반사 뱅크 구조체 내에 있으며, 패시베이션 층은 뱅크 층 위에 있고 반사 뱅크 구조체 내의 마이크로 LED 디바이스 주위에 측 방향으로 있다. 마이크로 LED 디바이스의 일부 및 뱅크 층의 꼭대기에 있는 전도성 라인은 패시베이션 층의 상부 표면 위에 돌출된다.

광전 반도체 칩

... 본 발명은 광전 반도체 칩에 관한 것으로, ALD-층인 캡슐화층(13)은 p-전도성 영역(3)을 등지는 면에서 제 1 미러층(21)을 완전히 커버하고, 부분적으로 제 1 미러층(21)과 직접 접촉한다.

METHOD OF MANUFACTURING NANO STURUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE

METHOD AND DEVICE FOR DISPENSING POWDER

A method for dispensing powder includes: providing a device for dispensing powder, the device including a framework, warps connected to the framework, a trough configured to receive powder, an actuating member configured to displace at least one of the framework and the trough, and an action source configured to allow the powder to be detached from the warps and dispensed on an object; supplying the powder to the warps and generating an electric field for the powder to carry an electric charge and become charged powder; and providing, by the action source, a force to at least one of the framework and the warps for the charged powder to be detached from the warps, the charged powder moving dependent on the electric field and being dispensed on the object. The warps have equal amounts of charged powder carried thereon, thereby allowing the charged powder to be evenly distributed. COPYRIGHT KIPO 2017 ...

고반사성 플립칩 LED 다이

LED 다이(40)는 투명한 성장 기판(46)의 제1 표면 위에 에피택셜 성장된 N형 층(18), P형 층(22), 및 활성층(20)을 포함한다. 제1 표면의 반대편에 있는 기판의 제2 표면을 통하여 광이 방출되고 인광체층(30)에 의해 파장 변환된다. 개구들(42, 44)이 중심 영역들(42)에 그리고 다이의 에지(44)를 따라 에칭되어 기판(46)의 제1 표면을 노출시킨다. 은과 같은 고반사성 금속(50)이 개구들에 퇴적되고 금속 P-접촉으로부터 절연된다. 반사성 금속은 각각의 개구의 내부 에지를 따라 N형 층의 노출된 면에 전기적으로 연결됨으로써 N형 층을 위한 전류를 전도할 수 있다. 반사성 금속은 인광체층에 의해 방출된 하향 광을 반사하여 효율을 개선한다. 반사성 금속에 의해 제공된 반사성 영역들은 다이 면적의 10%-50%를 형성할 수 있다.

Coating film, method for forming coating film, and light emitting diode device

A coating film is formed on a surface of a metal material which can prevent the surface of the metal material from discoloration due to corrosion, even under a heat treatment when producing or being used at outdoors over a long period of time, and is excellent in a wire bonding characteristic. Under atmospheric pressure, a hexamethyldisiloxane compound and nitrogen as a carrier gas are mixed and atomized in a nitrogen plasma gas for radicalizing and polymerizing the hexamethyldisiloxane compound, such that a polysiloxane film having a thickness of 4 nm to 14 nm is formed on the surface of the metal material, wherein the polysiloxane film contains polysiloxane having a main chain of -(Si-O-Si)n-.

Solid state lighting devices with improved contacts and associated methods of manufacturing

Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

Semiconductor light-emitting device manufacturing method and semiconductor light-emitting device

There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers.

Light-emitting diode device and manufacturing method thereof

A light-emitting diode (LED) device includes a substrate and an epitaxial layer which is disposed on a surface of the substrate. A depression is disposed to a sidewall of the LED device, and a reflective layer is disposed to on least one portion of the depression. By the reflective layer disposed to the depression of the sidewall of the LED device, the light loss caused by the interface of the substrate and the epitaxial layer can be reduced, the light absorbed by the substrate can be decreased, and the angle of the light exiting from the LED device can be adjusted. A manufacturing method of the LED device is also disclosed.

Led mesa sidewall isolation by ion implantation

A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.

Semiconductor light-emitting structure

A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.

Light-emitting device and manufacturing method for light-emitting device

A light-emitting device includes: a substrate; the metal film at the mounting region on the substrate; a light-emitting part including a plurality of light-emitting elements disposed on the metal film; metal members formed on the substrate, respectively including pad parts and wiring parts, forming a positive electrode and a negative electrode configured to apply a voltage to the light-emitting element through the wiring parts, respectively; and a plating wire connected to the metal film, extended to a side face of the substrate. The metal film and the metal members are independently disposed. The wiring part of the positive electrode and the wiring part of the negative electrode are formed at a circumference of the mounting region. The metal members are formed apart from the circumferential edge of the substrate on the side of the mounting region of the substrate.

Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip

A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer ( 2 ), arranging a p-conducting layer ( 4 ) on the n-conducting layer ( 2 ), arranging a metal layer sequence ( 5 ) on the p-conducting layer ( 4 ),arranging a mask ( 6 ) at that side of the metal layer sequence ( 5 ) which is remote from the p-conducting layer ( 4 ),in places removing the metal layer sequence ( 5 ) and uncovering the p-conducting layer ( 4 ) using the mask ( 6 ), and in places neutralizing or removing the uncovered regions ( 4 a ) of the p-conducting layer ( 4 ) as far as the n-conducting layer ( 2 ) using the mask ( 6 ), wherein the metal layer sequence ( 5 ) comprises at least one mirror layer ( 51 ) and a barrier layer ( 52 ), and the mirror layer ( 51 ) of the metal layer sequence ( 5 ) faces the p-conducting layer ( 4 ).

Light emitting package

The present invention discloses a light emitting package, including: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a screen member having an opening and disposed on the base adjacent to the light emitting device; and a lens covering the light emitting device, wherein a width of a cross-sectional shape of the screen member is larger than a height of the cross sectional shape of the screen member, wherein the lens is disposed on the screen member, and wherein the lens is connected to an uppermost surface of the screen member.

Light emitting devices having shielded silicon substrates

Light emitting devices comprise a light emitting component, such as a GaN LED having active material layers supported by a Silicon substrate, which can be a growth substrate, or attached. Phosphor(s) can be disposed relative to the light emitting component to absorb a primary emission, and produce a secondary emission that can be relatively tuned or selected so that their combination produces light of a desired spectrum, such as light appearing white. The Silicon substrate has exposed sidewalls, which can be angled, with respect to planar surfaces of the substrate, and a light reflecting material, such as a diffusely reflective material coats the sidewalls. The reflective material can be opaque to the primary and secondary emissions. If other exposed portions of the Silicon substrate exist and are exposed to primary or secondary light, these other exposed portions can be coated with such light reflecting material.

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT SOURCE MODULE

There is provided a semiconductor light emitting device including: a heat dissipation structure including one or more of materials among a metal, a ceramic, a semiconductor, and a resin; a flexible insulating layer directly in contact with the heat dissipation structure; a conductive layer laminated on the flexible insulating layer; and a light emitting device mounted on the conductive layer, wherein the light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, and the first electrode includes a plurality of conductive vias connected to the first conductivity-type semiconductor layer through the second conductivity-type semiconductor layer and the active layer.

Led device manufacturing method and fluorescent material-dispersed solution used in same

The present invention addresses the problem of providing an LED device having no color unevenness in light emission. In order to solve the problem, this LED device manufacturing method includes: a step of providing an LED chip-mounted package; a step of film-forming a fluorescent material layer by applying a fluorescent material-dispersed solution to a emission surface of the LED chip, said fluorescent material-dispersed solution containing a solvent, a fluorescent material, clay minerals and porous inorganic particles, and by drying the fluorescent material-dispersed solution; and a step of film-forming a wavelength conversion section by applying, to the fluorescent material layer, a precursor solution having a precursor of a light transmissive ceramic dispersed in a solvent, and by firing the layer, said wavelength conversion section being composed of a light transmissive ceramic layer having the fluorescent material, the clay minerals and the porous inorganic particles dispersed therein.

Light emitting diode, photodiode, displays, and method for forming the same

The present invention is related to solid state light emitting diodes (LEDs), photodetector/photovoltaic devices, displays, applications and methods for making the same. As demonstrated experimentally, the LEDs, as disclosed herein, have high light emission efficiency, high contrast, high brightness, low ambient light reflection, low light glare, and a tunable display viewing angle. The same LED disclosed here can be used as high efficiency displays and high efficiency photovoltaic device or photodetectors. This means that the same device, where used in array form, can be used as the display (LED operation mode) and power supply (photovoltaic device mode) and camera (photodetector and imaging mode).

LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit. 1. A light emitting device , comprising:a wavelength conversion layer having an upper surface and a lower surface opposite to each other;at least one light emitting unit having two electrode pads located on the same side of the light emitting unit, wherein the light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads;a reflective protecting element encapsulating the light emitting unit and a portion of the wavelength conversion layer, and exposing the two electrode pads of the light emitting unit and the lower surface of the wavelength conversion layer; anda light transmissible layer disposed on the wavelength conversion layer and located between the light emitting unit and the reflective protecting element.2. The light emitting device as claimed in claim 1 , wherein the light transmissible layer is further disposed between the wavelength conversion layer and the light emitting unit.3. The light emitting device as claimed in claim 1 , wherein the reflective protecting element comprises a reflective surface in contact with the light emitting unit.4. A light emitting device claim 1 , comprising:a wavelength conversion layer having an upper surface and a lower surface opposite to each other;at least one light emitting unit having two electrode pads ...

METHOD FOR MANUFACTURING INORGANIC LIGHT EMITTER

A method for manufacturing an inorganic light emitter, include arranging an inorganic light emitting element on one surface of a substrate; separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; and stacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter. 1. A method for manufacturing an inorganic light emitter , the method comprising:arranging an inorganic light emitting element on one surface of a substrate;separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; andstacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter.2. The method for manufacturing the inorganic light emitter according to claim 1 , wherein the oxygen concentration is set to be in a range of 22% to 30% at the separating.3. The method for manufacturing the inorganic light emitter according to claim 1 , whereinthe arranging includes forming the inorganic light emitting element above a formation substrate, andthe separating includes separating the inorganic light emitting element from the formation substrate by emitting the laser light to the inorganic light emitting element above the formation substrate.4. The method for manufacturing the inorganic light emitter according to claim 3 , wherein the separating includes transferring the ...

LIGHT EMITTING ELEMENT STRUCTURE AND METHOD OF FABRICATING A LIGHT EMITTING ELEMENT

Provided are a light-emitting diode structure and a light-emitting diode manufacturing method. The light-emitting diode manufacturing method comprises the operations of: 1. A method of fabricating a light-emitting element , the method comprising:preparing a lower substrate, which includes a substrate and a separation layer on the substrate;preparing at least one semiconductor rod on the separation layer;forming a rod structure, which includes a rod protecting layer on the separation layer to surround the at least one semiconductor rod;forming an auxiliary layer formed on at least part of the rod protecting layer;separating the rod structure from the lower substrate by removing the separation layer; andseparating the at least one semiconductor rod from the rod structure.2. The method of claim 1 , wherein claim 1 , in the separating the rod structure claim 1 , the separation layer is etched away by an etchant for separation claim 1 , andwherein the rod protecting layer does not react with the etchant for separation.3. The method of claim 2 , wherein the etchant for separation includes a material containing fluorine (F) claim 2 , andwherein the rod protecting layer includes an organic material that is insoluble in the etchant for separation.4. The method of claim 3 , wherein the forming the rod structure comprises forming the rod protecting layer by coating the at least one semiconductor rod with the organic material.5. The method of claim 4 , wherein the organic material of the rod protecting layer includes at least one of polymethyl methacrylate (PMMA) claim 4 , photoresist (PR) claim 4 , and poly-(3 claim 4 ,4-ethylenedioxy thiophene)polystyrene sulfonate (PEDOT:PSS).6. The method of claim 4 , wherein the separating the at least one semiconductor rod comprises removing the auxiliary layer from the rod protecting layer claim 4 , dissolving the organic material of the rod protecting layer in a solvent claim 4 , and removing the organic material dissolved in the ...

DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DEVICE

Discussed is a display device using a semiconductor light emitting device. In a display device including a plurality of semiconductor light emitting devices, each of the plurality of semiconductor light emitting devices includes a first conductive semiconductor layer, a second conductive semiconductor layer overlapped with the first conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode deposited on the first conductive semiconductor layer, and a second electrode deposited on the second conductive semiconductor layer, wherein the first electrode is extended toward an adjoining semiconductor light emitting device to be electrically connected to the adjoining semiconductor light emitting device. 1. A display device comprising a plurality of semiconductor light emitting devices , wherein each of the plurality of semiconductor light emitting devices comprises:an n-type semiconductor layer;a p-type semiconductor layer overlapped with the n-type semiconductor layer;an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer;an n-type electrode deposited on the n-type semiconductor layer; anda p-type electrode deposited on the p-type semiconductor layer,wherein the n-type electrode is formed as an electrode line extending toward an adjoining semiconductor light emitting device to be electrically connected to the adjoining semiconductor light emitting device, andwherein the electrode line is overlapped with one surface of an n-type semiconductor layer of the adjoining semiconductor light emitting device.2. The display device of claim 1 , wherein the plurality of semiconductor light emitting devices further comprises an insulating layer formed to cover the n-type electrode.3. The display device of claim 2 , wherein the insulating layer comprises a black or white insulator.4. The display device of claim 1 , wherein the ...

LED ELEMENT AND MANUFACTURING METHOD FOR SAME

An LED element capable of further improving the light extraction efficiency and a manufacturing method for the same are provided. 1. An LED element of a flip chip type , comprising:a sapphire substrate;a semiconductor lamination unit that is formed on a front surface of the sapphire substrate and that includes a light-emitting layer; anda reflection unit that is formed on the semiconductor lamination unit,wherein the front surface of the sapphire substrate forms a verticalized moth eye surface having a plurality of depression parts or projection parts whose period is greater than twice an optical wavelength of light emitted from the light-emitting layer and smaller than coherent length,wherein a back surface of the sapphire substrate forms a transmission moth eye surface having depression parts or projection parts whose period is smaller than twice the optical wavelength of light emitted from the light-emitting layer,wherein the verticalized moth eye surface reflects and transmits light being incident on the verticalized moth eye surface from a side of the semiconductor lamination unit, and is configured in such a manner that, in an angle region exceeding a critical angle, intensity distribution of light emitted by reflection from the verticalized moth eye surface on the side of the semiconductor lamination unit is inclined to direction closer to vertical direction with respect to an interface between the semiconductor lamination unit and the sapphire substrate, as compared with the intensity distribution of light being incident on the verticalized moth eye surface on the side of the semiconductor lamination unit, and that, in the angle region exceeding the critical angle, the intensity distribution of light emitted by transmission from the verticalized moth eye surface on a side of the sapphire substrate is inclined to direction closer to the vertical direction with respect to the interface, as compared with the intensity distribution of light being incident on the ...

OPTOELECTRONIC SEMICONDUCTOR CHIP ENCAPSULATED WITH AN ALD LAYER AND CORRESPONDING METHOD OF PRODUCTION

An optoelectronic semiconductor chip includes a semiconductor body including n-conducting and p-conducting regions, an active region generating electromagnetic radiation, a mirror layer reflecting the electromagnetic radiation, and an encapsulating layer sequence formed with an insulating material, wherein the mirror layer is arranged at an underside of the p-conducting region, the active region is arranged at a side of the p-conducting region facing away from the mirror layer, the n-conducting region is arranged at a side of the active region facing away from the p-conducting region, the encapsulation layer sequence covers the semiconductor body at the outer surface thereof in places, the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the mirror layer, and the encapsulation layer sequence includes at least one encapsulation layer which is an ALD layer or consists of an ALD layer. 112-. (canceled)13. An optoelectronic semiconductor chip comprising:a semiconductor body comprising an n-conducting region, an active region that generates electromagnetic radiation, and a p-conducting region;a first mirror layer that reflects the electromagnetic radiation; andan encapsulation layer sequence formed with an electrically insulating material, whereinthe first mirror layer is arranged at an underside of the p-conducting region;the active region is arranged at a side of the p-conducting region facing away from the first mirror layer;the n-conducting region is arranged at a side of the active region facing away from the p-conducting region;the encapsulation layer sequence covers the semiconductor body at the outer surface thereof in places;the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the first mirror layer; andthe encapsulation layer sequence comprises at least one ...

Optoelectronic Semiconductor Component and Method for Producing Optoelectronic Semiconductor Components

An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer. 116-. (canceled)17. An optoelectronic semiconductor component comprising:a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends;an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces; andat least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars,wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation,wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars,wherein the contact pillars extend through the isolation layer such that the first and second contact pads are located on the same side of the isolation layer, andwherein each contact pillars is coated with an electrically ohmically conductive outer layer.18. The optoelectronic semiconductor component according to claim 17 ,wherein each outer layer comprising metallic layers impermeable to the radiation generated, ...

PRINTABLE INORGANIC SEMICONDUCTOR STRUCTURES

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate. 125-. (canceled)26. A printable inorganic semiconductor structure comprising:a semiconductor element having a substrate side and a handle side opposite the substrate side;a first electrical contact on the handle side of the semiconductor element;a second electrical contact on the substrate side of the semiconductor element;an interlayer forming an anchor separated from and adjacent to the semiconductor element;a handle substrate adhered to the interlayer; anda tether bridging the substrate side of the semiconductor element to the anchor, thereby physically securing the semiconductor element to the anchor.27. (canceled)28. The structure of claim 26 , wherein the handle substrate is a wafer.29. The structure of claim 26 , wherein the sacrificial layer comprises a material selected from the group consisting of Si (1 1 1) claim 26 , InAlP claim 26 , InP claim 26 , GaAs claim 26 , InGaAs claim 26 , AlGaAs claim 26 , GaSb claim 26 , GaAlSb claim 26 , AlSb claim 26 , InSb claim 26 , InGaAlSbAs claim 26 , InAlSb claim 26 , and InGaP. ...

Light emitting diode device and manufacturing method thereof

An LED device includes: a first semiconductor layer of a first type; a second semiconductor layer of a second type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light; and a filter formed on the second semiconductor layer and configured to transmit light in the second wavelength band within the first wavelength band. The filter includes a defect layer, first refractive layers, and second refractive layers having a refractive index greater than a refractive index of the first refractive layers, the first refractive layers and the second refractive layers are formed alternately on one side and other side of the defect layer. A thickness of the defect layer is determined based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer.

Backplane led integration and functionalization structures

Display integration schemes are described for passivating LEDs and providing conductive terminal connections. In accordance with embodiments, a sidewall passivation layer is formed around the LEDs. The sidewall passivation layer may or may not be contained within a well structure. A top electrode layer is formed to electrically connect the LEDs to conductive terminal routing.

BROADBAND EFFICIENT GAN-BASED LED CHIP BASED ON SURFACE PLASMON EFFECT AND MANUFACTURING METHOD THEREFOR

A broadband efficient GaN-based LED chip based on a surface plasmon effect and a manufacturing method therefor. The broadband efficient GaN-based LED chip is of a flip-chip structure, and comprises, from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer connected to a surface of the p-GaN layer is provided with a micro-nano composite metal structure. A micro metal structure comprises alternating protrusion portions and recess portions; and a nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer. 1. A broadband efficient GaN-based LED chip based on a surface plasmon effect , the broadband efficient GaN-based LED chip is of a flip-chip structure , comprising from bottom to top in sequence , a substrate , a buffer layer , an unintentionally doped GaN layer , an n-GaN layer , a quantum well layer , an electron blocking layer , a p-GaN layer , a metallic reflecting mirror layer , a passivation layer , a p-electrode layer , and an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer contacted to a surface of the p-GaN layer is provided with a micro-nano composite metal structure.2. The broadband efficient GaN-based LED chip based on a surface plasmon effect according to claim 1 , wherein the micro-nano composite metal structure comprises a micro metal structure and a nano metal structure; both the micro metal structure and the nano metal structure are structures with alternating protrusion and recess claim 1 , and the nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer; the surface of the p-GaN layer is provided with a micro-nano composite ...

Led frame, manufacture method thereof and led device

An LED frame, a manufacture method thereof and an LED device are disclosed. A transparent insulating protection layer is prepared on the metal material layer of the surface of the LED frame by a process such as vapor deposition, sputtering, vacuum plating, etc., so that the metal material layer can be prevented from making contact with the external environment. The transparent insulating protection layer is a transparent inorganic material layer and the metal material layer is a silver layer or an aluminum layer.

ENHANCED LIGHT EXTRACTION

There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs. 1. A light emitting structure comprising:a light emitter capable of emitting electromagnetic radiation including in the visible spectrum;an integrated transparent electrically conductive layer located adjacent the light emitter through which the light may be transmitted;wherein the integrated transparent conductive layer is shaped in order to increase the amount of light capable of being extracted from the light emitting structure.2. A light emitting structure according to claim 1 , wherein the light emitting structure is a light emitting diode (LED) or a micro-LED.3. A light emitting structure according to claim 1 , wherein the light emitter is a quantum well region from which light is capable of being emitted; and wherein the quantum well region is about 0.05-0.2 microns thick or about 0.1 micron thick.4. (canceled)5. A light emitting structure according to claim 3 , wherein the quantum well region is made from InGaN/GaN; and wherein the light emitted from the light emitter has a wavelength of about 300-700 nm.6. (canceled)7. A light emitting structure according to claim 1 , wherein the integrated transparent conductive layer is in the form of a shaped cap which is formed with the rest of the light emitting structure during fabrication e.g. etching of the cap layer which has been deposited by electron beam evaporation or physical vapor deposition claim 1 , or a range of sputter deposition techniques or from a liquid phase technique or where the transparent conductive layer has been bonded under high pressure and temperature to the light emitting structure wherein optionally the cap has a dome shaped cross-section in one or two dimensions e.g. a round claim 1 , conical or sloped cross-section or ...

METHOD FOR MANUFACTURING A SEMICONDUCTOR ELEMENT

A method for manufacturing a semiconductor element includes: providing a nitride semiconductor layer; performing plasma treatment to at least part of a surface of the nitride semiconductor layer in an oxygen-containing atmosphere while applying bias power; after the performing of the plasma treatment, heat treating the nitride semiconductor layer in an oxygen-containing atmosphere; forming a protective film on a region of the surface of the nitride semiconductor layer where the plasma treatment was performed; and forming an electrode in a region of the surface of the nitride semiconductor layer where the protective film was not formed. 1. A method for manufacturing a semiconductor element , comprising:providing a nitride semiconductor layer;performing plasma treatment to at least part of a surface of the nitride semiconductor layer in an oxygen-containing atmosphere while applying bias power;after the performing of the plasma treatment, heat treating the nitride semiconductor layer in an oxygen-containing atmosphere;forming a protective film on a region of the surface of the nitride semiconductor layer where the plasma treatment was performed; andforming an electrode in a region of the surface of the nitride semiconductor layer where the protective film was not formed.2. The method for manufacturing a semiconductor element according to claim 1 , whereinthe heat treating of the nitride semiconductor layer is conducted in an atmosphere having an oxygen content of 0.01% to 2.0%.3. The method for manufacturing a semiconductor element according to claim 1 , whereinthe performing of the plasma treatment and the heat treating of the nitride semiconductor layer are conducted so that, after the heat treating, an area of the surface of the nitride semiconductor layer in which gallium and oxygen are bonded is larger in a region where the plasma treatment was performed than in a region that has not been subjected to the plasma treatment.4. The method for manufacturing a ...

LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

There is provided a light-emitting device comprising a light-emitting element. The light-emitting device of the present invention comprises an electrode part for the light-emitting element; a reflective layer provided on the electrode part; and the light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer, wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer, wherein the electrode part serves as a supporting layer for supporting the light-emitting element, and wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element. 1. A light-emitting device comprising a light-emitting element comprising:an electrode part for the light-emitting element;a reflective layer provided on the electrode part; andthe light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer,wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer,wherein the electrode part serves as a supporting layer for supporting the light-emitting element,wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element, andwherein the electrode part is provided as a wet plating layer, and the reflective layer is provided as a dry plating layer.2. (canceled)3. The light-emitting device according to claim 1 , wherein the electrode part is thicker than the light-emitting element.4. The light-emitting device according to claim 1 , further comprising a first insulating part provided around the electrode part and a second insulating part provided around the light-emitting ...

Method of Producing an Apparatus, Apparatus and Optoelectronic Component

A method for producing an apparatus, an apparatus and an optoelectronic component are disclosed. In an embodiment the method includes providing a carrier, depositing an amorphous ALD layer on the carrier using an ALD method and recrystallizing the amorphous ALD layer into a crystalline layer. 119-. (canceled)20. A method of producing an apparatus , the method comprising:providing a carrier;depositing an amorphous ALD layer on the carrier using an ALD method; andrecrystallizing the amorphous ALD layer into a crystalline layer.21. The method according to claim 20 , wherein the amorphous ALD layer comprises aluminum oxide.22. The method according claim 20 , wherein the amorphous ALD layer comprises aluminum oxide claim 20 , and wherein recrystallizing the amorphous ALD layer comprises recrystallizing the amorphous ALD layer to a crystalline γ-AlOOH layer.23. The method according to claim 20 , wherein the amorphous ALD layer has a thickness between 10 nanometers and 200 nanometers inclusive.24. The method according to claim 20 , wherein the amorphous ALD layer is recrystallized by exposure to a temperature and/or a humidity and/or a pressure.25. The method according to claim 24 , wherein the temperature and/or the humidity and/or the pressure varies.26. The method according to claim 20 , wherein the amorphous ALD layer is recrystallized by exposure to a temperature between 100° C. and 140° C. inclusive.27. The method according to claim 20 , wherein the amorphous ALD layer is recrystallized by exposure to a pressure between 1 mbar bar and 3.0 bar inclusive.28. The method according to claim 20 , wherein the amorphous ALD layer is recrystallized by exposure to a humidity in which a water content of a gaseous medium at least partly surrounding the amorphous ALD layer is between 50% and 100% relative humidity inclusive.29. The method according to claim 28 , wherein no water condenses on the amorphous ALD layer from the gaseous medium.30. The method according to claim 20 , ...

LIGHT-EMITTING ELEMENT, METHOD OF FABRICATING THE LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE

A light-emitting element, a method of fabricating a light-emitting element, and a display device comprising a light-emitting element are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and second semiconductor layer, an electrode layer disposed on the second semiconductor layer, an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer and an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer. 1. A light-emitting element comprising:a first semiconductor layer doped with an n-type dopant;a second semiconductor layer doped with a p-type dopant;a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer;an electrode layer disposed on the second semiconductor layer;an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer; andan insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.2. The light-emitting element of claim 1 , wherein the insulating structure includes:a bottom surface that contacts the electrode layer; andan inclined side surface that is inclined with respect to the bottom surface,wherein a diameter of the insulating structure decreases from the bottom surface to a top of the insulating structure.3. The light-emitting element of claim 2 , wherein a height of the insulating structure is in a range of about 500 nm to about 1 μm.4. The light-emitting element of claim 2 , wherein a maximum diameter of the insulating structure is in a range of about 100 nm to about 500 nm.5. The light-emitting element of claim 1 , ...

LIGHT-EMITTING ASSEMBLY, METHOD FOR MAKING SAME, AND ELECTRONIC DEVICE USING SAME

A light-emitting assembly with improved illumination includes a first substrate, a light guide layer, light emitters, a touch sensor, a first reflective layer, and a second reflective layer. The first substrate defines a light-transmitting area. The light emitters are in the light guide layer. The light emitters emit light to illuminate the light-transmitting area. The touch sensor is opposite to the light-transmitting area. The first reflective layer is between the first substrate and the light guide layer and defines an opening aligned with the light-transmitting area. The second reflective layer is on a side of the light guide layer away from the first substrate. An electronic device using the light-emitting assembly and a method for making the light-emitting assembly are also disclosed. 1. A light-emitting assembly , comprising:a first substrate defining a light-transmitting area, and a first surface configured for receiving touches;a light guide layer on a side of the first substrate away from the first surface;a plurality of light emitters in the light guide layer, the plurality of light emitters being configured to project light to illuminate the light-transmitting area;a touch sensor in the light guide layer and opposite to the light-transmitting area;a first reflective layer between the first substrate and the light guide layer, the first reflective layer comprising an opening aligned with the light-transmitting area; anda second reflective layer on a side of the light guide layer away from the first substrate.2. The light-emitting assembly of claim 1 , further comprising diffusion particles distributed in the light guide layer.3. The light-emitting assembly of claim 1 , further comprising a diffusion layer configured to diffuse and homogenize light emitted by the plurality of light emitters claim 1 , wherein the diffusion layer is on a side of the first reflective layer away from the first substrate claim 1 , or the diffusion layer is on a side of the ...

SURFACE TREATMENT OF A SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks. 1. A method comprising:roughening a light extracting surface of a semiconductor structure, the semiconductor structure comprising a light emitting layer; andafter said roughening, reducing the mean surface roughness of the light extracting surface.2. The method of wherein reducing the mean surface roughness of the light extracting surface comprises reducing the mean surface roughness by at least 10%.3. The method of wherein reducing the mean surface roughness of the light extracting surface comprises reducing the mean surface roughness by at least 30%.4. The method of wherein reducing the mean surface roughness of the light extracting surface comprises treating the surface with plasma.5. The method of further comprising:growing the semiconductor structure on a growth substrate;attaching the semiconductor structure to a mount; andremoving the growth substrate; wherein the light extracting surface is a surface revealed by removing the growth substrate.6. The method of wherein:roughening a light extracting surface of a semiconductor structure comprises forming a plurality of peaks on the surface; andreducing the mean surface roughness of the light extracting surface comprises flattening tops of at least a portion of the plurality of peaks.7. The method of further comprising disposing a wavelength converting material over the treated surface.8. A method comprising:roughening a light extracting surface of a semiconductor structure, the semiconductor structure comprising a light emitting layer, wherein said roughening forms surface features on the light extracting surface; andafter said roughening, reducing a height of the surface features.9. The method of wherein reducing a height of the surface features comprises reducing the height of the surface features by at least 20%.10. The method of wherein reducing ...

Method for Producing an Optoelectronic Semiconductor Component, and Optoelectronic Semiconductor Component

In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side.

Semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer.

LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface; providing a first laser to the LED wafer to cut through the semiconductor stack with a depth into the substrate; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips. 1. A method of manufacturing a light-emitting device , comprising:providing a light-emitting diode wafer, comprising a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface;providing a first laser to the light-emitting diode wafer to cut through the semiconductor stack with a depth into the substrate;providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; andproviding force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips.2. The method of claim 1 , wherein the textured area has a roughness (root mean squared) of ranges from 1 μm to 5 μm.3. The method of claim 1 , wherein a thickness of the substrate is not smaller than 150 μm.4. The method of claim 1 , wherein the second laser is a stealth dicing laser claim 1 , and the stealth dicing laser is repeatedly irradiated in the substrate for a number of cycles to form the plurality of textured areas on the same cross section of the substrate.5. The method of claim 4 , wherein a thickness of the substrate is not smaller than 150 μm claim 4 , and the number of cycles is not greater than a value rounded up to integer of (thickness of the substrate −100)μm/50.6. The method of claim 4 , wherein the repeated stealth dicing laser comprises:performing a first stealth dicing laser ...

LIGHT-EMITTING DIODE MODULE HAVING LIGHT-EMITTING DIODE JOINED THROUGH SOLDER PASTE AND LIGHT-EMITTING DIODE

Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module. 1. A light emitting diode module comprising:a printed circuit board; anda light emitting diode bonded to the printed circuit board, the light emitting diode comprising:a first conductive-type semiconductor layer;a plurality of mesas placed on the first conductive-type semiconductor layer and each including an active layer and a second conductive-type semiconductor layer;reflective electrode structures respectively placed on the mesas;an anti-diffusion reinforcing layer placed on each of the reflective electrode structures;a first electrode pad electrically connected to the first conductive-type semiconductor layer; anda second electrode pad electrically connected to the anti-diffusion reinforcing layer,wherein the first electrode pad and the second electrode pad are respectively bonded to corresponding pads on the printed circuit board via solder paste.2. The light emitting diode module according to claim 1 , wherein the light emitting diode further comprises a current spreading layer covering the plurality of mesas and the first conductive-type semiconductor layer claim 1 , including openings respectively placed in upper regions of the mesas and exposing the reflective electrode structures claim 1 , forming ohmic contact with the first ...

METHOD OF MAKING A LIGHT-EMITTING DEVICE

A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer. 1. A method of making a light emitting device , comprising steps of:providing a substrate;forming a light-emitting structure comprising an active layer on the substrate;forming a protective layer having a first thickness on the light-emitting structure;etching the protective layer such that the protective layer has a second thickness smaller than the first thickness; andpatterning the protective layer.2. The method of claim 1 , wherein the protective layer is formed on a top surface and a sidewall of the light-emitting structure.3. The method of claim 1 , wherein a difference between the first thickness and the second thickness is larger than 3000 Å.4. The method of claim 1 , further comprising applying a laser after forming the protective layer.5. The method of claim 4 , further comprising cutting the protective layer by the laser.6. The method of claim 4 , further comprising forming a trench in the substrate by the laser.7. The method of claim 1 , wherein the step of etching the protective layer comprises etching the protective layer by an acidic solution.8. The method of claim 1 , wherein the second thickness is between 3000-9700 Å.9. The method of claim 1 , further comprising:patterning the protective layer to form a patterned protective layer;forming a transparent conductive layer on the patterned protective layer and the light-emitting structure; andforming a first electrode on the transparent conductive layer.10. The method of claim 9 , wherein the first electrode is formed on the transparent conductive layer at a position corresponding to the patterned protective ...

Method for Manufacturing an Optoelectronic Component, and Optoelectronic Component

A method for manufacturing an optoelectronic component includes providing a growth substrate; applying a succession of semiconductor layers; structuring the succession of semiconductor layers; applying a sacrificial layer; depositing a metal layer; optionally planarizing using a dielectric material; forming a second terminal contact through the active region; applying a permanent support; and detaching the growth substrate and exposing the metal layer. 114-. (canceled)15. A method for producing an optoelectronic component , the method comprising:providing a growth substrate;applying a semiconductor layer sequence, the semiconductor layer sequence having an upper side and a lower side, the semiconductor layer sequence also having an n-doped semiconductor region, a p-doped semiconductor region and an active layer for generating radiation arranged between the n-doped and p-doped semiconductor regions, wherein the upper side faces away from the growth substrate and the lower side faces the growth substrate;structuring the semiconductor layer sequence from the upper side of the semiconductor layer sequence thereby producing side surfaces of the semiconductor layer sequence;applying a sacrificial layer on the side surfaces of the semiconductor layer sequence and on surfaces exposed during the structuring of the semiconductor layer sequence;depositing a metal layer for forming a first connection contact onto the upper side of the semiconductor layer sequence, onto the side surfaces of the semiconductor layer sequence and onto the sacrificial layer;forming a second connection contact through the active layer;applying a permanent carrier to the upper side of the semiconductor layer sequence;detaching the growth substrate; andexposing the metal layer.16. The method according to claim 15 , wherein the sacrificial layer is applied on the side surfaces of the semiconductor layer sequence and on surfaces exposed during the structuring of the semiconductor layer sequence in order ...

Dilute-Antimonide Group-II-Nitride Nanostructure Optoelectronic Devices

A nanostructure optoelectronic device, in accordance with aspects of the present technology, can include a group-III element semiconductor with a first type of doping, one or more quantum structures including a dilute-Antimonide group-III-Nitride disposed on the first type of doped group-III element semiconductor, and a group-III element semiconductor with a second type of doping disposed on the dilute-Antimonide group-III-Nitride. The concentration of the Antimony (Sb) can be adjusted to vary the energy bandgap of the dilute-Antimonide group-III-Nitride between 3.4 and 2.0 electron Volts (eV) 1. A nanowire comprising:a first portion including a group-III element semiconductor with a first type of doping;a second portion including one or more quantum structures including a dilute-Antimonide group-III-Nitride disposed on the first portion, anda third portion including a group-III element semiconductor with a second type of doping disposed on the second portion opposite the fast portion.2. The nanowire according to claim 1 , wherein the dilute-Antimonide group-III-Nitride comprises one percent (1%) or less Antimony (Sb).3. The nanowire according to claim 1 , wherein the group-III element semiconductor comprises Gallium (Ga).4. The nanowire according to claim 1 , wherein the group-III element semiconductor comprises Gallium Nitride (GaN).5. The nanowire according to claim 1 , wherein the one or more quantum structures comprises one or more set of quantum layers of Gallium Antimonide Nitride (GaSbN) and Gallium Nitride (GaN).6. The nanowire according to claim 5 , wherein the one or more quantum structures comprises one or more structures of one or more layers of quantum dots claim 5 , one or more layers of quantum disks claim 5 , one or more layers of quantum arch-shaped elements claim 5 , one or more layers of quantum wells claim 5 , and one or more layers of quantum dots within a quantum well.7. The nanowire according to claim 5 , wherein the Gallium Antimonide ...

Combining light-emitting elements of differing divergence on the same substrate

An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array. 1. An optoelectronic device , comprising:a semiconductor substrate; and a first plurality of first vertical-cavity surface-emitting lasers (VCSELs), which comprise first mesas having a first width and are configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array; and', 'a second plurality of second VCSELs, which comprise second mesas having a second width smaller than the first width and are configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array., 'a monolithic array of light-emitting elements formed on the substrate comprising epitaxial structures of multiple epitaxial layers, the light-emitting elements comprising2. The optoelectronic device according to claim 1 , wherein the first VCSELs have first optical apertures claim 1 , and the second VCSELs have second optical apertures claim 1 , which are smaller than the first optical apertures.3. The optoelectronic device according to claim 1 , wherein the monolithic array comprises an arrangement of mutually adjacent unit cells claim 1 , wherein each unit cell comprises a set of radiators capable of functioning as VCSELs claim 1 , and wherein in at least some of the unit cells at least one of the radiators is converted to an incoherent light-emitting ...

Method for Manufacturing a Radiation-Emitting Semiconductor Component and Radiation-Emitting Semiconductor Component

A method for manufacturing a radiation-emitting semiconductor device and radiation-emitting semiconductor device are disclosed. In an embodiment a method includes providing a radiation-emitting semiconductor chip having a first main surface including a radiation exit surface of the semiconductor chip, applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface, galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point, galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point, wherein a material of the first metallic layer and a material of the second metallic layer are different, and applying a casting compound between the contact points. 117-. (canceled)18. A method of manufacturing a radiation-emitting semiconductor device , the method comprising:providing a radiation-emitting semiconductor chip having a first main surface comprising a radiation exit surface of the semiconductor chip;applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface;galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point;galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point,wherein a material of the first metallic layer and a material of the second metallic layer are different; andapplying a casting compound between the contact points.19. The method according to the claim 18 ,applying a structured dielectric layer with openings to the seed layer before galvanically depositing the first metallic layer and/or the second metallic layer,wherein the material of the first metallic layer and/ ...

LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE

A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer. 1a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, the first conductive type semiconductor layer having exposed portions separated from one another and the second conductive type semiconductor layer and the active layer forming mesa structures;electrodes formed over the mesa structures;a first insulation layer formed over the electrodes and the mesa structures and including openings exposing portions of the electrodes; anda second insulation layer formed over the first insulation layer and including openings exposing portions of the first insulation layer and the electrodes,wherein the first insulation layer includes a distributed Bragg reflector (DBR),wherein the light emitting diode further comprises a first pad formed over the second insulation layer and electrically connected to a current spreading layer, and a second pad ...

Jetting a Highly Reflective Layer Onto an LED Assembly

A layer of Highly Reflective (HR) material is deposited by jetting microdots of the HR material in liquid form onto a substrate and then allowing the HR material to harden. In one example, the HR layer is the HR layer of a white LED assembly. The HR layer is jetted onto the substrate around LED dice of the assembly after die attach and wire bonding have been completed. The HR material can be made to flow laterally so that areas of the substrate under wire bonds are coated with HR material, so that HR material contacts side edges of the LED dice, and so that HR material contacts the inside side edge of a retaining ring. By jetting the HR material in this way, the amount of substrate that is not covered with HR material is reduced, thereby improving the light efficiency of the resulting LED assembly. 125- (canceled)26. An apparatus comprising:a substrate having an upper surface;a Light Emitting Diode (LED) die having a plurality of side edges, wherein the LED die is disposed on a first part of the upper surface of substrate; anda layer of highly reflective (HR) material disposed on a second part of the upper surface of the substrate such that the layer does not extend under the LED die and does not extend over the LED die but such that the layer contacts at least one of the side edges of the LED die.27. The apparatus of claim 26 , further comprising:a bond wire attached to the LED die, wherein the layer of HR material extends under the bond wire between the bond wire and the substrate.28. The apparatus of claim 26 , wherein the layer of HR material is more than 10 microns thick claim 26 , and wherein the HR material comprises titanium.29. The apparatus of claim 26 , wherein the HR material has a reflectivity of more than 85 percent.30. The apparatus of claim 26 , wherein the upper surface of the substrate forms a well claim 26 , wherein the LED die is disposed in the well claim 26 , and wherein at least a portion of the layer of HR material is disposed in the well.31. ...

METHOD FOR MANUFACTURING CIRCUIT BOARD, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE

A method for manufacturing a circuit board includes a first process, a second process, a third process, and a fourth process. The first process includes a step of providing a circuit and an electrode over a first surface of a first substrate. The second process includes a step of providing a reflective layer on the first surface side of the first substrate or a second surface side of a second substrate. The third process includes a step of attaching the first surface and the second surface to each other with a bonding layer therebetween to face each other so that the reflective layer overlaps with the electrode and the reflective layer surrounds part of the electrode. The fourth process includes a step of irradiating at least part of the reflective layer with laser light from a side opposite to the electrode.

Group iii nitride semiconductor light-emitting device and production method therefor

The Group III nitride semiconductor light-emitting device has an insulating multilayer film intervening between a second semiconductor layer and a transparent electrode. The insulating multilayer film serves as a distributed Bragg reflector and is formed in a region including a projection area obtained by projecting a p-electrode to the p-type contact layer. The insulating multilayer film has a first region and a second region, wherein the first region has a layer thickness greater than 95% of the maximum film thickness of the insulating multilayer film, and the second region has a layer thickness not greater than 95% of the maximum film thickness of the insulating multilayer film. The second surface of the insulating multilayer film in the second region has a slope having a dent portion denting toward the first surface of the insulating film.

Method of manufacturing light emitting element

A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

METHOD FOR FABRICATING PACKAGE STRUCTURE

A method for fabricating a package structure is provided. At least one light emitting component is sucked and adhered to a carrier. An encapsulating member encapsulates the light emitting component. A conductive component is connected to the light emitting component.

LED-Based Light Source Utilizing Asymmetric Conductors

A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material containing light scattering particles is used instead of expensive reflective cups to reflect light upwards that is emitted sideways from the LED dies. The diffusively reflective material is dispensed over the top surface of the substrate and contacts the side surfaces of the dies. The light scattering particles are spheres of titanium dioxide suspended in silicone. The light source is manufactured in a reel-to-reel process in which the asymmetric conductor material and the diffusively reflective material are cured simultaneously. A silicone layer of molded lenses including phosphor particles is also added over the mounted LED dies in the reel-to-reel process. 112-. (canceled)13. A method comprising:depositing an amount of asymmetric conductor material on a mounting substrate, wherein the asymmetric conductor material comprises deformable conducting particles suspended in a transparent carrier material;mounting a light emitting diode (LED) die onto the mounting substrate in a flip-chip manner over the deposited amount of asymmetric conductor material;dispensing a diffusively reflective material onto the mounting substrate adjacent to the mounted LED die such that the diffusively reflective material contacts the LED die, wherein the diffusively reflective material comprises light scattering particles suspended in the transparent carrier material;pressing the LED die against the mounting substrate such that some of the deformable conducting particles deform; andheating the transparent carrier material such that both the asymmetric conductor material and the diffusively reflective material cure to a hardened state.14. The method of claim 13 , ...

DISPLAY DEVICE USING SEMICONDUCTOR LIGHT-EMITTING ELEMENTS, AND METHOD FOR MANUFACTURING SAME

Discussed is a display device and a method for manufacturing same, specifically, to a display device using semiconductor light-emitting elements of a few micrometers to tens of micrometers in size, and includes substrate having a wiring electrode, and a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, wherein each of the plurality of light-emitting elements includes of a buffer layer and an oxide layer formed on the buffer layer, and the oxide layer includes of an oxide of the buffer layer. 1. A display device , comprising:a substrate having a wiring electrode; anda plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, a buffer layer; and', 'an oxide layer formed on the buffer layer, and, 'wherein each of the plurality of semiconductor light-emitting elements compriseswherein the oxide layer is made of an oxide of the buffer layer.2. The display device of claim 1 , wherein each of the plurality of semiconductor light-emitting element further comprises:a first conductive semiconductor layer formed on the wiring electrode;an active layer deposited on the first conductive semiconductor layer; anda second conductive semiconductor layer deposited on the active layer,wherein the buffer layer is deposited on the second conductive semiconductor layer.3. The display device of claim 2 , wherein the oxide layer is formed on a surface different from a surface in contact with the second conductive semiconductor layer among surfaces of the buffer layer.4. The display device of claim 3 , wherein the oxide layer is made of any one of gallium oxide claim 3 , silicon oxide claim 3 , aluminum oxide claim 3 , silicon carbide claim 3 , and titanium oxide.5. The display device of claim 3 , wherein the buffer layer comprises a plurality of nanopores claim 3 , andwherein the nanopores are formed on the surface in contact with the oxide layer among the surfaces of the buffer layer-laver.6. The ...

LIGHT-EMITTING ELEMENT, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE HAVING LIGHT-EMITTING ELEMENT

A light emitting element includes an emission stacked pattern and an insulating film. The emission stack pattern includes a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer. The insulating film surrounds an outer surface of the emission stacked pattern and has a non-uniform thickness. 1. A light emitting element comprising: a first conductive semiconductor layer;', 'an active layer disposed on the first conductive semiconductor layer; and', 'a second conductive semiconductor layer disposed on the active layer; and, 'an emission stacked pattern includingan insulating film surrounding an outer surface of the emission stacked pattern and having a non-uniform thickness.2. The light emitting element according to claim 1 , wherein a shape of the outer surface of the emission stacked pattern is different from a shape of an outer surface of the insulating film.3. The light emitting element according to claim 2 , whereinthe emission stacked pattern includes the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer that are sequentially stacked, the emission stacked pattern having a rod shape, andthe outer surface of the insulating film has an elliptical shape, a polygonal shape, or a shape having the elliptical shape and the polygonal shape.4. The light emitting element according to claim 3 , wherein the insulating film comprises at least one protrusion on the outer surface of the insulating film.5. The light emitting element according to claim 1 , wherein a shape of the outer surface of the emission stacked pattern is same as a shape of an outer surface of the insulating film.6. The light emitting element according to claim 5 , wherein the outer surface of the emission stacked pattern and the outer surface of the insulating film each have a polygonal shape.7. A method of manufacturing a light ...

LIGHT EMITTING COMPONENT

A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. 1. A light emitting component comprising:an epitaxial structure comprising a substrate, a first semiconductor layer disposed on the substrate, a light emitting layer and a second semiconductor layer disposed on the first semiconductor layer and exposed the first semiconductor layer;an adhesive layer disposed on the second semiconductor layer;a metal layer disposed on the adhesive layer and exposed the adhesive layer;a Bragg reflective layer covering metal layer, the exposed adhesive layer, a side surface of the second semiconductor layer and at least a portion of the exposed first semiconductor layer;a block layer, comprising a metal, covering at least a portion of the Bragg reflective layer and not configured for electrical conductivity;a first electrode electrically connected to the first semiconductor layer; anda second electrode electrically connected to the second semiconductor layer via the metal layer and the adhesive layer.2. The light emitting component of claim 1 , wherein a material of the metal layer is silver claim 1 , silver alloy claim 1 , aluminum ...

PROCESS FOR FABRICATING SEMICONDUCTOR NANOWIRES OR MICROWIRES HAVING INSULATED ROOTS

A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer. 1. A method of manufacturing an electronic device comprising a substrate and microwires or nanowires resting on the substrate , the method comprising the successive steps of:a) covering the microwires or nanowires with an insulating layer;b) covering the insulating layer with an opaque layer;c) depositing a first resist layer extending on the substrate between the wires;d) etching the first resist layer across a first thickness by photolithography;e) etching the first resist layer remaining after step d) across a second thickness by plasma etching;f) etching the portion of the opaque layer which is not covered with the first resist layer remaining after step e);g) etching the portion of the insulating layer which is not covered with the opaque layer;h) removing the first resist layer remaining after step e); andi) removing the opaque layer.2. The method of claim 1 , wherein the height of the microwires or nanowires is in the range from 250 nm to 50 μm.3. The method of claim 1 , wherein the maximum thickness of the first resist layer at step c) is greater than the height of the microwires or nanowires.4. The method of claim 1 , wherein the thickness of ...

LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF

A light emitting device includes first and second electrodes spaced apart from each other on a substrate, at least one bar-type LED having a first end on the first electrode and a second end on the second electrode, and an insulative support body between the substrate and the bar-type LED. The at least one bar-type LED has a length greater than a width. 1. A light emitting device , comprising:a substrate;first and second electrodes spaced apart from each other on the substrate;at least one bar-type LED having a first end on the first electrode and a second end on the second electrode, the at least one bar-type LED having a length greater than a width; andan insulative support body between the substrate and the bar-type LED.2. The light emitting device as claimed in claim 1 , wherein the bar-type LED has a cylindrical shape or polygonal column shape at a micro scale or nano scale.3. The light emitting device as claimed in claim 1 , wherein the bar-type LED includes a first conductive semiconductor layer doped with a first conductive dopant claim 1 , a second conductive semiconductor layer doped with a second conductive dopant claim 1 , and an active layer between the first and second conductive semiconductor layers.4. The light emitting device as claimed in claim 1 , wherein the insulative support body has a width corresponding to a diameter or width of the bar-type LED.5. The light emitting device as claimed in claim 1 , wherein a shortest length of the insulative support body is substantially equal to a distance between the first and second electrodes.6. The light emitting device as claimed in claim 1 , wherein the first electrode claim 1 , the second electrode claim 1 , and the insulative support body are on a same plane on the substrate and have substantially a same height.7. The light emitting device as claimed in claim 1 , wherein the insulative support body includes at least one of one or more organic layers or one or more inorganic layers.8. The light ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

Provided is a semiconductor light emitting device includes a semiconductor stacked layer having a light extraction surface perpendicular to a stacked surface of the semiconductor stacked layer , a light transmissive light guide member disposed on the semiconductor stacked layer , a light reflective member disposed on the light guide member , and a light reflective package which has an open portion corresponding to the light extraction surface and surrounds peripheral surfaces of the semiconductor stacked layer 1. A semiconductor light emitting device comprising:a semiconductor stacked layer having a top surface, a bottom surface and a plurality of peripheral surfaces;a growth substrate having a top surface, the growth substrate being disposed above the top surface of the semiconductor stacked layer;a wavelength conversion member having a bottom surface that is directly joined to the top surface of the growth substrate;a light reflective member disposed above the top surface of the wavelength conversion member; andelectrodes connected to the semiconductor stacked layer and disposed on the bottom surface of the semiconductor stacked layer;wherein a light extraction surface of the light emitting device is perpendicular to the top surface of the semiconductor stacked layer, andwherein the light emitting device further comprises a light reflective package that has an open portion corresponding to the light extraction surface and that surrounds at least a portion of the peripheral surfaces of the semiconductor stacked layer, the growth substrate and the electrodes.2. The semiconductor light emitting device according to claim 1 , wherein the light reflective package is integrated with an insulating member that electrically insulates electrodes connected to the semiconductor stacked layer.3. The semiconductor light emitting device according to claim 1 , wherein the light reflective member is formed of metal.4. The semiconductor light emitting device according to claim 1 , ...

SOLID STATE LIGHTING DEVICES WITH IMPROVED CONTACTS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile. 1. A solid state lighting (“SSL”) device , comprising:an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials;a first contact on the first semiconductor material; anda second contact on the second semiconductor material, the second contact including a conductive material encapsulating a plurality of pads of a contact material, the plurality of pads of the contact material being sized to spatially modulate a current density of the SSL structure.2. The SSL device of wherein the plurality of pads of the contact material extend partially from the second semiconductor material into the conductive material.3. The SSL device of wherein the plurality of pads of the contact material extend completely from the second semiconductor material to a conductive surface of the conductive material.4. The SSL device of wherein the plurality of pads of the contact material form an interface with the second semiconductor material having a first contact resistance.5. The SSL device of wherein the conductive material has a second contact resistance higher than the first contact resistance.6. ...

DISPLAY DEVICES AND METHODS FOR FORMING DISPLAY DEVICES

A display device is provided. The display device includes a thin-film transistor substrate, a conductive pad disposed on the thin-film transistor substrate, and an adhesion film disposed on the conductive pad. The adhesion film includes a plurality of conductive particles. The display device also includes a light-emitting component disposed on the adhesion film. The light-emitting component includes a connection feature. The display device also includes a protection layer partially surrounding the light-emitting component. The connection feature of the light-emitting component has a lower portion not surrounded by the protection layer. The adhesion film has a thickness of T, one of the plurality of conductive particles has a diameter of d, the lower portion of the connection feature has a thickness of t, and 0 Подробнее

SINGLE-SIDED LIGHT-EMITTING LED CHIPS AND FABRICATION METHOD THEREOF

Provided are a single-sided light-emitting LED chip and a fabrication method thereof. The single-sided light-emitting LED chip includes a highly reflective dielectric film and an LED including a substrate layer, an epitaxial layer, a cathode, and an anode. The LED has a substrate side, that is one surface of the substrate layer, and an electrode side opposite to each other, and the four sidewalls that respectively contacts the substrate side and the electrode side. The epitaxial layer is located on the other surface of the substrate layer; the cathode and the anode are located on a side of the epitaxial layer away from the substrate layer; and the four sidewalls of the LED are covered with the highly reflective dielectric film. The present invention simplifies the packaging process and improves the luminous efficiency of the packaged chip. 1. A single-sided light-emitting LED chip , comprising:an LED, comprising a substrate layer, an epitaxial layer, a cathode, and an anode; anda highly reflective dielectric film;wherein the LED has a substrate side and an electrode side opposite to each other, and four sidewalls; one surface of the substrate layer is the substrate side, and the epitaxial layer is located on the other surface of the substrate layer; and the cathode and the anode are located on a side of the epitaxial layer away from the substrate layer;the LED chip is of a conventional structure or a flip-chip structure; when the LED chip is of the conventional structure, a light-emitting side is the electrode side of the LED chip, and the substrate side of the LED chip is deposited with a highly reflective layer and/or the highly reflective dielectric film; and the four sidewalls of the LED chip is covered with the highly reflective dielectric film; andwhen the LED chip is of the flip-chip structure, the light-emitting side is the substrate side of the LED chip; the highly reflective layer is provided on the electrode side of the epitaxial layer away from the ...

LAMP USING SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

Discussed is a lamp and a lamp device, and more particularly, to a lamp using a semiconductor light-emitting device, and a method of manufacturing the lamp. The lamp includes a substrate; a plurality of semiconductor light-emitting devices disposed on the substrate; a flat layer formed between the plurality of semiconductor light-emitting devices; a spacer disposed between the substrate and the flat layer; and an air gap disposed between each semiconductor light-emitting device and the spacer. 1. A lamp , comprising:a substrate;a plurality of semiconductor light-emitting devices disposed on the substrate;a flat layer formed between the plurality of semiconductor light-emitting devices;a spacer disposed between the substrate and the flat layer; andan air gap disposed between each semiconductor light-emitting device and the spacer.2. The lamp of claim 1 , wherein the air gap surrounds a periphery of each of the plurality of semiconductor light-emitting devices.3. The lamp of claim 2 , further comprising:a wiring electrode disposed on the substrate; anda metal solder layer disposed between the wiring electrode and each semiconductor light-emitting device,wherein the air gap is disposed on the wiring electrode and surrounds a periphery of the metal solder layer.4. The lamp of claim 3 , wherein a part of each of the plurality of semiconductor light-emitting devices is surrounded by the flat layer claim 3 , andwherein another part of each of the plurality of semiconductor light-emitting devices is surrounded by the air gap.5. The lamp of claim 3 , wherein each of the plurality of semiconductor light-emitting devices is entirely surrounded by the flat layer claim 3 , andwherein the air gap surrounds the metal solder layer.6. The lamp of claim 1 , wherein the flat layer comprises:a first region that surrounds the plurality of the semiconductor light-emitting devices; anda second region that surrounds the first region, andwherein the air gap is disposed between the first ...

Methods for Manufacturing Isolated Deep Trench and High-Voltage LED Chip

A method for manufacturing a deep isolation trench () and a method for manufacturing a high-voltage LED chip. Steps of the method for manufacturing a deep isolation trench () are as follows: forming a mask layer () on a substrate (), and forming, in the mask layer, through etching, multiple windows () isolated from each other, the bottom of each window exposing the substrate; with epitaxial lateral overgrowth, forming an epitaxial structure () inside each window and a part of the mask layer around the window, respectively, each epitaxial structure having a trapezoidal cross section with a long bottom and a short top, and a gap between adjacent epitaxial structures forming a first deep trench (); etching each epitaxial structure, forming a first shoulder () and a second shoulder () at both sides of each epitaxial structure, respectively, and forming a deep isolation trench above the mask layer between the adjacent epitaxial structures. The method for manufacturing a high-voltage LED chip is capable of decreasing preparation cost of the deep isolation trench in the high-voltage LED chip, and increasing continuity and compactness interconnection performance of an insulation isolation dielectric layer and an interconnection electrode layer between deep isolation trenches within a high-voltage LED chip. 1. A method of forming deep isolation trenches , comprising the steps of:providing a substrate, forming a mask layer over a surface of the substrate and etching the mask layer to form therein a plurality of windows, wherein the plurality of windows are spaced from one another and each of the plurality of windows exposes the underlying substrate;performing an epitaxial lateral overgrowth process to form epitaxial structures, each filling, and covering a portion of the mask layer surrounding, a corresponding one of the plurality of windows, so that a first deep trench is formed between each pair of adjacent ones of the epitaxial structures, wherein each of the epitaxial ...

LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation. 1. A light-emitting device , comprising:a carrier; anda first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.2. The light-emitting device of claim 1 , wherein the first semiconductor structure comprises a first n-type semiconductor layer claim 1 , a first p-type semiconductor layer claim 1 , and the first MQW structure is between the first n-type semiconductor layer and the first p-type semiconductor layer; and the second semiconductor structure comprises a second n-type semiconductor layer claim 1 , a second p-type semiconductor layer claim 1 , and the second MQW structure is between the second n-type semiconductor layer and the second p-type semiconductor layer.3. The light-emitting device of claim 1 , further comprising a first top electrode formed on the first semiconductor structure claim 1 , a bottom electrode formed on the carrier claim 1 , and a third top electrode formed on the second semiconductor structure of the ...

OPTOELECTRONIC SEMICONDUCTOR ELEMENT, OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR ELEMENTS

An optoelectronic semiconductor element may include at least one LED chip which emits infrared radiation via a top side during operation. The radiation has a global intensity maximum at wavelengths between 800 nm and 1100 nm. The radiation has, at most 5% of the intensity of the intensity maximum at a limit wavelength of 750 nm. The radiation has a visible red light component. The semiconductor element may further include a filter element, which is arranged directly or indirectly on the top side of the LED chip and which has a transmissivity of at most 5% for the visible red light component of the LED chip, wherein the transmissivity of the filter element is at least 80%, at least in part, for wavelengths between the limit wavelength and 1100 nm, and a radiation exit surface provided for emitting the filtered radiation. 2. The semiconductor element as claimed in claim 1 ,wherein the filter element is a band-pass filter with a transmission maximum between 800 nm and 1100 nm and with a full width at half maximum of between 3 nm and 60 nm, wherein the filter element has a carrier substrate made of glass or silicon, and wherein a filter layer for filtering the radiation of the LED chip is provided on the carrier substrate.3. The semiconductor element as claimed in claim 1 ,wherein the filter element is a high-pass filter with a GaAs carrier substrate and an AlGaAs filter layer grown onto the carrier substrate, wherein the AlGaAs filter layer is provided for filtering the radiation of the LED chip.4. The semiconductor element as claimed in claim 2 ,wherein the filter element is applied onto the LED chip in such a way that the filter layer faces the LED chip such that the radiation exit surface is formed by the carrier substrate.5. The semiconductor element as claimed in claim 1 ,wherein the filter element is applied to the top side of the LED chip by a silicone adhesive.6. The semiconductor element as claimed in claim 1 ,wherein the filter element is a lacquer layer ...

MANUFACTURING METHOD OF A FLIP-CHIP LIGHT EMITTING DIODE PACKAGE MODULE

The instant disclosure relates to a flip-chip LED package module and a method of manufacturing thereof. The method of manufacturing flip-chip LED package module comprises the following steps. A plurality of LEDs is disposed on a carrier. A packaging process is forming a plurality of transparent lens corresponding to LEDs and binding each other by a wing portion. A separating process is proceeding to form a plurality of flip-chip LED structures without the carrier. A bonding process is proceeding to attach at least one flip-chip LED structure on the circuit board. 1. A method of manufacturing a flip-chip LED package module , comprising the following steps:disposing a plurality of LED chips on a carrier;a packaging process, forming a plurality of transparent packages connected with each other and respectively enclosing the LED chips;a separating process, separating the transparent packages from each other to form a plurality of single flip-chip LED structures without the carrier; anda bonding process, bonding at least a flip-chip LED structure to a circuit board and exposing a bottom surface of the transparent package of the flip-chip LED structure.2. The method according to claim 1 , wherein each of the LED chips has a surrounding lateral surface claim 1 , a first surface and a second surface opposite the first surface claim 1 , the surrounding lateral surface is adjacent to the first surface and the second surface claim 1 , the second surface has at least one pair of chip metalized pads claim 1 , the at least one pair of chip metalized pads has a gap; and the packaging process comprises enclosing the surrounding lateral surfaces claim 1 , the first surfaces and the second surfaces of the LED chips claim 1 , and filling the gaps by the transparent packages.3. The method according to claim 2 , wherein the packaging process comprises forming a flat bottom surface of the transparent packages coplanar with a contact point of each of the chip metalized pads and the upper ...

Packaging for Ultraviolet Optoelectronic Device

A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment. 1. A method of packaging a set of optoelectronic devices , the method comprising:obtaining a device package including the set of optoelectronic devices mounted on a first surface;placing an ultraviolet transparent polymer material adjacent to each optoelectronic device in the set of optoelectronic devices on the first surface; andprocessing the ultraviolet transparent polymer material to cause the transparent polymer material to adhere to at least a portion of the first surface such that the device package and the ultraviolet transparent polymer material seal a portion of each optoelectronic device in the set of optoelectronic devices located on the first surface from an ambient environment.2. The method of claim 1 , wherein the set of optoelectronic devices includes a plurality of optoelectronic devices claim 1 , and wherein the method further includes physically separating the device package between at least some of the plurality of optoelectronic devices claim 1 , wherein the portion of each optoelectronic device in the set of optoelectronic devices remains sealed from the ambient environment after the separating.3. The method of claim 1 , wherein the set of optoelectronic devices includes a plurality of optoelectronic devices claim 1 , and wherein the processing seals at least two of the plurality of optoelectronic devices within a single sealed area.4. The method of claim ...

Led element and method for producing same

An LED element includes a substrate, a semiconductor lamination part that includes a light-emitting layer formed on a front surface of the substrate, a reflecting portion formed on a back surface of the substrate, and an electrode formed on the semiconductor lamination part. The electrode includes a diffusion electrode layer formed on the semiconductor lamination part and a moth-eye layer which is formed on the diffusion electrode layer and of which the front surface forms the transmissive moth-eye surface having depression parts or projection parts formed with a period smaller than twice the optical wavelength of the light emitted from the light-emitting layer.

Light emitting diode chip and preparation method thereof

A method for preparing a light emitting diode chip, the method including: 1) providing a substrate; 2) growing an n-type semiconductor layer, an active layer and a p-type semiconductor layer on the substrate sequentially in that order; 3) forming a step including an upper horizontal end surface, a lower horizontal end surface and a step surface in the n-type semiconductor layer, the active layer and the p-type semiconductor layer; 4) growing a transparent conductive layer on the upper horizontal end surface, and forming an etching hole in the middle of the transparent conductive layer; 5) forming an N electrode on the lower horizontal end surface, and forming a P electrode in the etching hole; 6) growing a metal catalyst layer on the light emitting diode chip; and 7) forming a fluorinated graphene protective layer on the metal catalyst layer.

LIGHT EMITTING ELEMENT, DISPLAY DEVICE USING THE SAME, AND METHOD OF FABRICATING DISPLAY DEVICE

A light emitting device may include a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; an electrode layer disposed on the second semiconductor layer; a protective layer disposed on the electrode layer; and an insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer. 1. A light emitting device comprising:a first semiconductor layer;an active layer disposed on the first semiconductor layer;a second semiconductor layer disposed on the active layer;an electrode layer disposed on the second semiconductor layer;a protective layer disposed on the electrode layer; andan insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer.2. The light emitting device according to claim 1 , wherein the protective layer has a thickness equal to or less than a thickness of the insulating film.3. The light emitting device according to claim 1 , wherein the protective layer includes an insulating material having an etch rate equal to or higher than an etch rate of an insulating material for forming the insulating film.4. The light emitting device according to claim 1 , wherein the protective layer includes an organic photoresist material.5. The light emitting device according to claim 4 , wherein the protective layer includes at least one of polyimide and polyacrylate.6. The light emitting device according to claim 1 , whereinthe first semiconductor layer comprises an N-type semiconductor layer including an N-type dopant, andthe second semiconductor layer comprises a P-type ...

PHOSPHOR CONVERTER STRUCTURES FOR THIN FILM PACKAGES AND METHOD OF MANUFACTURE

Light emitting devices (LEDs) and methods of manufacturing LEDs are described. A method includes providing a layer of a wavelength converting material on a temporary tape. The wavelength converting material includes at least a binder or matrix material, particles of a non-luminescent material, and phosphor particles and has a concentration of 60%-90% by volume particles of the non-luminescent material and phosphor particles. The layer of the wavelength converting material is separated on the temporary tape to form multiple wavelength converting structures, which are provided on an array type frame. Heat and pressure are applied to the wavelength converting structures on the array type frame. 1. A light emitting device (LED) comprising:a light emitting semiconductor structure comprising a light-emitting active layer disposed between an n-layer and a p-layer; anda wavelength converting structure having a first surface in direct contact with the light emitting semiconductor structure, a second surface opposite the first surface, and a side surface connecting the first and second surfaces, the wavelength converting structure comprising a binder or matrix material, particles of a non-luminescent material, and phosphor particles, the wavelength converting structure having a concentration of greater than 60% by volume of the non-luminescent material and phosphor particles, the side surface of the wavelength converting structure having a roughness of less than 100 nm.2. The LED of claim 1 , wherein the first surface of the wavelength converting structure is in direct contact with the light emitting semiconductor structure without intervening adhesive.3. The LED of claim 1 , comprising a non-metallic claim 1 , thin-film reflector in direct contact with the side surface of the wavelength converting structure.4. The LED of claim 3 , wherein the light emitting semiconductor structure has a first surface claim 3 , a second surface opposite the first surface claim 3 , and a side ...

OPTOELECTRONIC MODULES INCLUDING AN OPTICAL EMITTER AND OPTICAL RECEIVER

An apparatus includes an optoelectronic module including a light emitting die and a light receiver die mounted on a PCB substrate. The optoelectronic module further includes an optical element on the light emitting die and an optical element on the light receiver die, the optical elements being composed of a first epoxy. A second epoxy laterally surrounds and is in contact with respective side surfaces of the light emitting die, the light receiver die and the optical elements, wherein the second epoxy provides an optical barrier between the light emitting die and the light receiver die. A method of manufacturing such modules is described as well. 1. A method comprising:replicating optical elements onto respective surfaces of a plurality of light emitting dies operable to emit light having a wavelength and onto respective surfaces of a plurality of light receiver dies operable to detect light having the wavelength, wherein the optical elements are composed of a first epoxy, and wherein the plurality of light emitting dies and the plurality of light receiver dies are mounted on a PCB wafer attached by a double-sided adhesive tape to a support glass;injecting a second epoxy using a vacuum injection molding technique, wherein the second epoxy is substantially opaque to light having the wavelength, and wherein the second epoxy is injected such that it laterally surrounds and is in contact with respective side surfaces of each of the plurality of light emitting dies, each of the plurality of light receiver dies and each of the optical elements;forming respective trenches in the second epoxy in regions separating duplex pairs of the light emitting dies and the light receiver dies from one another, wherein each duplex pair includes one of the light emitting dies and one of the light receiver dies, and wherein the trenches partially extend into the PCB wafer;detaching the double-sided adhesive tape and the support glass from the PCB wafer;separating the PCB wafer at ...

Semiconductor Device and Method

In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

Light Emitting Diode and Fabrication Method Thereof

A light-emitting diode includes: a light emitting epitaxial structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and having a first surface as a light emitting surface, and an opposing second surface; a conducting layer formed over the second surface and including a physical plating layer and a chemical plating layer, wherein the physical plating layer is adjacent to the light emitting epitaxial structure and has cracks, and the chemical plating layer fills the cracks in the physical plating layer; and a submount coupled to the light emitting epitaxial laminated layer through the conducting layer.

Optoelectronic Semiconductor Chip and Method for Manufacturing an Optoelectronic Semiconductor Chip

An optoelectronic semiconductor chip and a method for manufacturing an optoelectronic semiconductor chip are disclosed. In an embodiment the semiconductor chip includes a semiconductor body having a main surface and at least one side surface arranged transversely to the main surface, a contact layer arranged on the main surface of the semiconductor body and containing an electrically conductive material, a filter layer arranged on the contact layer and containing a dielectric material and a conductive layer arranged on the filter layer and containing an electrically conductive material, wherein a thickness of the conductive layer is greater than a thickness of the contact layer, wherein the contact layer and the conductive layer comprise a transparent electrically conductive oxide, and wherein the filter layer is multi-layered and comprises at least two sublayers which differ in their refractive index. 120-. (canceled)21. An optoelectronic semiconductor chip comprising:a semiconductor body having a main surface and at least one side surface arranged transversely to the main surface, the semiconductor body having an active zone for generating electromagnetic radiation and a part of the generated radiation passing through the main surface of the semiconductor body during operation;a contact layer arranged on the main surface of the semiconductor body and containing an electrically conductive material;a filter layer arranged on the contact layer and containing a dielectric material; anda conductive layer arranged on the filter layer and containing an electrically conductive material,wherein a thickness of the conductive layer is greater than a thickness of the contact layer,wherein the contact layer and the conductive layer comprise a transparent electrically conductive oxide, andwherein the filter layer is multi-layered and comprises at least two sublayers which differ in their refractive index.22. The optoelectronic semiconductor chip according to claim 21 , wherein ...

Optoelectronic Component and Method for Producing an Optoelectronic Component

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a component includes a semiconductor layer sequence having a first semiconductor layer, an active layer, a second semiconductor layer and a top side stacked in the recited order, a first contact layer arranged at the first semiconductor layer, a mirror layer arranged on the top side and a recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer, wherein the recess has a bottom surface in a region of the first semiconductor layer, wherein the mirror layer covers a portion of the recess in plan view, wherein the first contact layer is in direct electrical and mechanical contact with a contact pin, and wherein the contact pin extends from the first contact layer to the top side of the semiconductor layer sequence. 117-. (canceled)18. An optoelectronic component comprising:a semiconductor layer sequence having a first semiconductor layer, an active layer configured to emit or absorb electromagnetic radiation during operation, a second semiconductor layer and a top side stacked in the recited order;a first contact layer arranged at the first semiconductor layer, via which the first semiconductor layer is configured to be electrically contacted during operation;a mirror layer arranged on the top side, via which the second semiconductor layer is configured to be electrically contacted during operation; anda recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer and which opens into the first semiconductor layer,wherein the recess has a bottom surface in a region of the first semiconductor layer, the bottom surface being delimited in a lateral direction, parallel to the active layer, by at least one side wall running transversely to the active layer,wherein the bottom surface and the side ...

MANUFACTURING METHOD OF QUANTUM DOT STRUCTURE

The present disclosure discloses a manufacturing method of a quantum dot structure including: providing a quantum dot film layer on a substrate; providing a first protection film on the quantum dot film layer; providing a patterned array on the first protection film; providing a second protection film on the first protection film and the patterned array to obtain an intermediate body; and performing an annealing process on the intermediate body to obtain the quantum dot structure on the substrate. 1. A manufacturing method of a quantum dot structure , comprising:providing a quantum dot film layer on a substrate;providing a first protection film on the quantum dot film layer;providing a patterned array on the first protection film;providing a second protection film on the first protection film and the patterned array to obtain an intermediate body; andperforming an annealing process on the intermediate body to obtain the quantum dot structure on the substrate.2. The manufacturing method of claim 1 , wherein a material of the patterned array is selected from any one of TiO claim 1 , Al claim 1 , HfO claim 1 , SiNand SrTiO; and a thickness of the patterned array is 40 nm˜300 nm claim 1 , and a length and/or width of the patterned array is 10 nm˜10 μm.3. The manufacturing method of claim 1 , wherein materials of the first protection film and the second protection film each are SiO; and a thickness of the first protection film is 5 nm˜50 nm claim 1 , and a thickness of the second protection film is 50 nm˜300 nm.4. The manufacturing method of claim 1 , wherein an annealing temperature for performing an annealing process on the intermediate body is 550° C.˜1000° C. claim 1 , and annealing time is 30 s˜10 min.5. The manufacturing method of claim 1 , wherein a material of the quantum dot film layer is selected from any one of InAs claim 1 , InGaAs claim 1 , InGaAlAs claim 1 , InSb claim 1 , GaSb and InP; a growing temperature of the quantum dot film layer is 300° C.˜550° C.; ...

Method for Producing an Optoelectronic Component, and Optoelectronic Component

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

A display device and a manufacturing method thereof, wherein the display device includes a light emitting diode chip, including: a light emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; a second electrode which is electrically connected to the second conductive semiconductor layer; an insulation unit which is disposed to cover a part of the top surface of the second electrode and side surfaces of the light emitting structure; and a second fixed part which covers the top surface of the insulation unit and is electrically connected to the second electrode, and at least a part of which extends to the side surfaces of the light emitting structure. 1. A display apparatus , comprising a light emitting diode chip , wherein the light emitting diode chip comprises:a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers;a second electrode electrically connected to the second conductivity type semiconductor layer;an insulator disposed to cover a portion of an upper surface of the second electrode and side surfaces of the light emitting structure; anda second coupler covering an upper portion of the insulator, and electrically connected to the second electrode, at least a portion of the second coupler extending to the side surfaces of the light emitting structure.2. The display apparatus of claim 1 , wherein:the first conductivity type semiconductor layer of the light emitting structure is exposed to the outside; a first electrode electrically connected to the first conductivity type semiconductor layer; and', 'a first coupler electrically connected to the first electrode, at least a portion of the first coupler extending to the side surfaces of the ...

PROTECTION LAYER AND METHOD FOR MAKING THE SAME

A protection layer for use in fabrication of failure analysis (FA) sample is disclosed, which principally comprises a first thin film, a buffer thin film and a second thin film By forming the protection layer on a surface of a malfunction device die, a FA sample of the malfunction device die is obtained. As a result, in the case of treating the sample with a FIB thinning process, there are no cracks, distortion, and/or collapse resulted from inter-elemental isobaric interferences, stress effect or charge accumulation occurring on the surface layer of the malfunction device die because of the protection of the protection layer. On the other hand, this protection layer can also be applied to a microLED element or a VCSEL element, so as to make microLED element and the VCSEL element possess excellent stress withstanding capability. 1. A protection layer , comprising:a first thin film made of a first material;a second thin film made of a second material, being formed on the first thin film; anda buffer thin film, being formed between the first thin film and the second thin film;wherein both the first material and the second material are selected from the group of metal oxide, metal sulfide, metal selenide, metal nitride, and metal oxynitride, and the buffer thin film being made of a mixture or a compound of the first material and the second material.2. The protection layer of claim 1 , wherein a first metal element for constituting the first material has a first atom radius claim 1 , and a second metal element for constituting the second material having a second atom radius that is greater than the first atom radius.3. The protection layer of claim 1 , wherein the protection layer has an application that is selected from the group consisting of fabrication of failure analysis (FA) sample claim 1 , enhancement of yield of mass transfer process of microLED dies claim 1 , and being a surface passivation layer of a vertical cavity surface emitting laser (VCSEL).4. A ...

Embedded Lighting Features for Lighting Panels

Lighting panels and methods of manufacturing lighting panels are described. An example lighting panel includes a substrate that has a planar surface, electrically conductive traces printed onto the planar surface of the substrate, and light sources mounted onto the electrically conductive traces at mounting positions such that the electrically conductive traces form an electrical interconnection between selected ones of the electrically conductive traces and associated ones of the light sources. The lighting panel also includes a polymer sheet provided over the light sources, and a composite base upon which a stack-up of the substrate with the printed electrically conductive traces, the light sources, and the polymer sheet is applied. The light sources are embedded into the composite base and are also flush with a top surface of the stack-up, and the substrate is also embedded into the composite base underneath the light sources at the mounting positions. 1. A method of manufacturing a lighting panel , comprising:printing a plurality of electrically conductive traces onto a planar surface of a substrate;mounting a plurality of light sources onto the plurality of electrically conductive traces on the planar surface of the substrate at mounting positions such that the plurality of electrically conductive traces form an electrical interconnection between selected ones of the plurality of electrically conductive traces and associated ones of the plurality of light sources;providing a polymer sheet over the plurality of light sources;providing a stack-up of the substrate with the printed plurality of electrically conductive traces, the plurality of light sources mounted on the planar surface, and the polymer sheet onto a composite base; andapplying pressure and heat to the stack-up and the composite base to embed the plurality of light sources into the composite base so as to be flush with a top surface of the stack-up, and to embed the substrate into the composite base ...

LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window. 1. A light-emitting diode that outputs light from a light emission hole to the outside , comprising:a reflecting layer that consists of metal; anda compound semiconductor layer that sequentially includes an active layer and a contact layer; on a supporting substrate in this order,wherein a flat portion and a mesa structure portion including an inclined side surface and a top surface are provided in an upper part of the light-emitting diode,wherein at least a part of the flat portion and at least a part of the mesa structure portion are sequentially covered with a protective film and an electrode film,the mesa structure portion includes at least a portion of the active layer,the inclined side surface is formed by wet etching,a cross-sectional area of the mesa structure portion in a horizontal direction is continuously reduced toward the top surface,the protective film covers at least a part of the flat portion, the inclined side surface of the mesa structure portion, and a peripheral region of the top surface of the mesa structure portion and the ...

Nano-structured light-emitting device and methods for manufacturing the same

A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.

FLEXIBLE SILICON INFRARED EMITTER

An apparatus includes a flexible silicon (Si) substrate, such as a crystalline n-type substrate, and a heterostructure structure formed on the silicon substrate. The heterojunction structure includes a first layered structured deposited on a first side of the silicon substrate. The first layered structured includes a first amorphous intrinsic silicon layer, an amorphous n-type or p-type silicon layer, and a transparent conductive layer. The second layered structure includes a second amorphous intrinsic silicon layer, an amorphous p-type or n-type silicon layer, and a transparent conductive layer. The heterostructure structure is configured to operate as a photovoltaic cell and an infrared light emitting diode. 1. An apparatus configured to operate as a photovoltaic cell and a light emitting diode , the apparatus comprising:a flexible silicon substrate;a heterostructure formed on the silicon substrate, the heterostructure structure including:a first layered structure deposited on a first side of the silicon substrate, the first layered structure including a first passivation layer, a first amorphous silicon layer doped as one of n-type or p-type, and a first transparent conductive layer;a second layered structure deposited on a second side of the silicon substrate, the second layered structure including a second passivation layer, a second amorphous silicon layer doped as one of n-type or p-type, wherein the second amorphous silicone layer is doped to be an opposite type as the first amorphous silicon layer, and a second transparent conductive layer; andmetallization applied to the apparatus for conducting electricity.2. The apparatus of claim 1 , wherein the flexible silicon substrate may be doped n-type or p-type.3. The apparatus of claim 1 , wherein the first passivation layer and the second passivation layer are comprised of intrinsic hydrogenated amorphous silicon.4. The apparatus of claim 1 , wherein the first transparent conductive layer and the second ...

Light emitting device and the manufacturing method for same

A light emitting device includes a light emitting element to emit a first light having a first peak wavelength. A second wavelength converting member contains a second phosphor to convert the first light into a third light having a third peak wavelength longer than the first peak wavelength and shorter than a second peak wavelength. The second wavelength converting member includes a portion in which the second wavelength converting member has a first concentration of the second phosphor at a height of an upper surface of the light emitting element in a height direction and a second concentration of the second phosphor at a height of a lower surface of the light emitting element in the height direction. The second concentration is higher than the first concentration such that the second phosphor reflects the second light.

LIGHT EMITTING DEVICE PACKAGE WITH REFLECTIVE SIDE COATING

A light-emitting device is disclosed that includes a semiconductor structure having an active region disposed between an n-type layer and a p-type layer; a wavelength converter formed above the semiconductor structure; an insulating side coating formed around the semiconductor structure; and a reflective side coating formed around the wavelength converter above the insulating side coating, the reflective side coating having a top surface that is flush with a top surface of the wavelength converter. 1. A light-emitting device , comprising:a semiconductor structure having an active region disposed between an n-type layer and a p-type layer;a wavelength converter formed above the semiconductor structure;an insulating side coating formed around the semiconductor structure; anda reflective side coating formed around the wavelength converter above the insulating side coating, the reflective side coating having a top surface that is flush with a top surface of the wavelength converter.2. The light-emitting device of claim 1 , wherein the reflective side coating is arranged to lead away heat generated by the wavelength converter.3. The light-emitting device of claim 1 , wherein the reflective side coating has a thermal conductivity of at least 200 W/mK.4. The light-emitting device of claim 1 , wherein:the insulating side coating includes a first binder material filled with reflective particles, andthe reflective side coating includes a second binder material filled with a metal powder.5. The light-emitting device of claim 1 , wherein:the semiconductor structure includes one or more sides, andthe insulating side coating is arranged to surround the semiconductor structure and substantially cover the sides of the semiconductor structure.6. The light-emitting device of claim 1 , wherein the insulating side coating is arranged to insulate the semiconductor structure from the reflective side coating.7. The light-emitting device of claim 1 , wherein the reflective side coating ...

Method for Manufacturing an Optoelectronic Light Emitting Device

In an embodiment a method includes arranging a first semiconductor wafer above a carrier, wherein the first semiconductor wafer includes a plurality of first semiconductor optoelectronic components, separating a plurality of the first components from the first semiconductor wafer by laser radiation so that the first components fall onto the carrier and attaching the first components separated from the first semiconductor wafer to the carrier, wherein regions of the first semiconductor wafer between adjacent first components are thinned and the first components are covered with a passivation layer before the first components are separated from the first semiconductor wafer. 113.-. (canceled)14. A method for manufacturing an optoelectronic light emitting device , the method comprising:arranging a first semiconductor wafer above a carrier, wherein the first semiconductor wafer comprises a plurality of first semiconductor optoelectronic components;separating the first components from the first semiconductor wafer by laser radiation so that the first components fall onto the carrier; andattaching the first components separated from the first semiconductor wafer to the carrier,wherein regions of the first semiconductor wafer between adjacent first components are thinned and the first components are covered with a passivation layer before the first components are separated from the first semiconductor wafer.15. The method according to claim 14 , wherein the first optoelectronic semiconductor components are μLEDs.16. The method according to claim 14 , further comprising:placing solder bumps on the carrier;heating the solder bumps before separating the first components from the first semiconductor wafer; andfixing the first components fallen onto the carrier to the carrier by the heated solder bumps.17. The method according to claim 16 , wherein each first component comprises contact pads claim 16 , wherein the first semiconductor wafer is arranged above the carrier such ...

METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENTS AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENTS

A method of manufacturing a light-emitting element comprises providing a semiconductor structure on a substrate, the semiconductor structure emitting light having different wavelength bands from each other, measuring the light having the different wavelength bands from each other and defining wavelength regions, forming nanopatterns spaced apart from each other on the semiconductor structure, the nanopatterns having different diameters from each other, and etching the semiconductor structure to form element rods. 1. A method of manufacturing a light emitting element , the method comprising:providing a semiconductor structure on a substrate, the semiconductor structure emitting light having different wavelength bands from each other;measuring the light having the different wavelength bands from each other and defining wavelength regions;forming nanopatterns spaced apart from each other on the semiconductor structure, the nanopatterns having different diameters from each other; andetching the semiconductor structure to form element rods.2. The method of claim 1 , wherein the wavelength regions include:a first wavelength region emitting a first light having a first wavelength band;a second wavelength region emitting a second light having a second wavelength band shorter than the first wavelength band; anda third wavelength region emitting a third light having a third wavelength band shorter than the second wavelength band.3. The method of claim 2 , wherein the forming of the nanopatterns includes forming a nanopattern having a large diameter on a wavelength region as a wavelength band of light emitted from the wavelength region decreases.4. The method of claim 3 , wherein{'claim-text': ['a first nanopattern;', 'a second nanopattern having a larger diameter than a diameter of the first nanopattern; and', 'a third nanopattern having a larger diameter than a diameter of the second nanopattern, and'], '#text': 'the nanopatterns include:'}{'claim-text': ['forming the first ...

LIGHT-EMITTING ELEMENT, METHOD OF FABRICATING THE LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE

A light-emitting element includes a first semiconductor layer doped to have a first polarity, a second semiconductor layer doped to have a second polarity different from the first polarity, a light-emitting layer disposed between the first and second semiconductor layers, a shell layer formed on side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the shell layer including a divalent metal element, and an insulating film covering an outer surface of the shell layer and surrounding the side surface of the light-emitting layer. 1. A light-emitting element comprising:a first semiconductor layer doped to have a first polarity;a second semiconductor layer doped to have a second polarity different from the first polarity;a light-emitting layer disposed between the first and second semiconductor layers;a shell layer formed on a side surface of the first semiconductor layer, a side surface of the light-emitting layer, and a side surface of the second semiconductor layer, the shell layer including a divalent metal element; andan insulating film covering an outer surface of the shell layer and surrounding the side surface of the light-emitting layer.2. The light-emitting element of claim 1 , further comprising:an electrode layer disposed on the second semiconductor layer,wherein the insulating film surrounds the light-emitting layer, the second semiconductor layer, and at least part of the outer surface of the electrode layer.3. The light-emitting element of claim 2 , wherein the shell layer is disposed directly on the side surfaces of the first semiconductor layer claim 2 , the light-emitting layer claim 2 , and the second semiconductor layer to form a physical interface with at least the first semiconductor layer.4. The light-emitting element of claim 3 , wherein the shell layer includes at least one of ZnS claim 3 , ZnSe claim 3 , MgS claim 3 , MgSe claim 3 , ZnMgS claim 3 , and ZnMgSe.5. The light-emitting element ...

LIGHT-EMITTING DEVICE PACKAGE CAPABLE OF IMPLEMENTING SURFACE LIGHT SOURCE, LIGHT-EMITTING MODULE, AND MANUFACTURING METHOD THEREFOR

A surface light source slim module mounted to a vehicle includes: a substrate; a plurality of packages; a first reflective layer formed on top of the substrate and having a plurality of holes; a molding member, which is formed on top of the first reflective layer, covers the plurality of packages and the first reflective layer, and includes a front portion through which light is output and a rear portion facing the front portion; and a second reflective layer formed on top of the molding member. 1. A surface light source slim module comprising:a substrate extending from one side to another;a plurality of packages mounted on top of the substrate in a direction from one side to another;a first reflective layer formed on top of the substrate and having a plurality of holes;a molding member, which is formed on top of the first reflective layer, covers the plurality of packages and the first reflective layer, and comprises a front portion through which light is output and a rear portion facing the front portion; anda second reflective layer formed on top of the molding member, whereinthe first reflective layer and the second reflective layer reflect light output from the plurality of packages to be concentrated on the front portion of the molding member, and a direction in which light is output from the plurality of packages and a direction in which light is output to the front portion of the molding member are parallel to each other.2. The surface light source slim module of claim 1 , wherein the plurality of packages are side-view packages claim 1 , and a direction in which light is output from the side-view packages and the direction in which light is output to the front portion of the molding member are the same.3. The surface light source slim module of claim 1 , wherein the plurality of packages are arranged in the plurality of holes of the first reflective layer claim 1 , respectively.4. The surface light source slim module of claim 1 , wherein a depth of the ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR

A semiconductor light-emitting device comprises: an insulating base, a current diffusion layer, light-emitting structure layers and an insulating layer. The current diffusion layer includes: a first electrode connecting part, a second electrode connecting part, N contact parts and N+1 flat parts. N+1 light-emitting structure layers are correspondingly disposed on the N+1 flat parts, and each of the N+1 light-emitting structure layers includes: a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked on a corresponding flat part. N grooves are formed on a side of the second semiconductor layer away from the active layer, depth of the N grooves is less than the thickness of the second semiconductor layer, and the N contact parts correspond to the N grooves. 1. A semiconductor light-emitting device , comprising:an insulating base;a current diffusion layer arranged on the insulating base, the current diffusion layer comprising: a first electrode connecting part, a second electrode connecting part, N contact parts between the first electrode connecting part and the second electrode connecting part, and N+1 flat parts between the first electrode connecting part and one contact part of the N contact parts which is adjacent to the first electrode connecting part, among the N contact parts, and between the second electrode connecting part and one contact part of the N contact parts which is adjacent to the second electrode connecting part, and N being a natural number;N+1 light-emitting structure layers correspondingly disposed on the N+1 flat parts, each of the N+1 light-emitting structure layers comprising: a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked on a corresponding flat part, N grooves cooperating with the N contact parts being formed on a side of the second semiconductor layer away from the active layer, a depth of the N grooves is less than a thickness of the second ...

PRINTABLE INORGANIC SEMICONDUCTOR STRUCTURES

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate. 12-. (canceled)3. A method of making an inorganic semiconductor structure suitable for micro-transfer printing , comprising:providing a source substrate;forming a semiconductor layer on the source substrate, wherein the semiconductor layer has a first side and a second side opposite the first side and adjacent to the substrate;removing a portion of the semiconductor layer to form a cantilever extension;forming a first electrical contact on the semiconductor layer;form a second electrical contact on the cantilever extension;removing a portion of the semiconductor layer surrounding each pair of first and second electrical contact to form a trench surrounding a semiconductor element made from the semiconductor layer, the semiconductor element having a substrate side in contact with the source substrate and a handle side opposite the substrate side;providing a sacrificial layer covering the first and second electrical contacts and covering at least a portion of the handle side of the semiconductor element and filling a portion of ...

MANUFACTURING METHOD OF COLORFUL MICRO-LED, DISPLAY MODLUE AND TERMINALS

The present disclosure relates to a manufacturing method of colorful Micro-LEDs. The method includes: bringing the array of the blue-light Micro-LEDs into contact with a first-color photosensitive solution and a second-color photosensitive solution; turning on first preset blue-light Micro-LEDs and the second preset blue-light Micro-LEDs of the array for conducting polymerization on the first and the second preset blue-light Micro-LEDs to form at least one lens. After the lens are formed, the first preset blue-light Micro-LEDs emit the light beams of the first color, the second preset blue-light Micro-LEDs emit the light beams of the second color, and the remaining blue-light Micro-LEDs emit the blue light beams to constitute three colors so as to obtain the colorful Micro-LEDs. In addition, the present disclosure also relates to a display module having the above array of the Micro-LEDs, and a terminal including the display module. 1. A manufacturing method of colorful Micro-LEDs , comprising:providing a substrate, wherein one side of the substrate is configured with an array having a plurality of blue-light micro-LEDs;bringing the array of the blue-light Micro-LEDs into contact with a first-color photosensitive solution;turning on first preset blue-light Micro-LEDs of the array for conducting polymerization on the first preset blue-light Micro-LEDs to form at least one lens;bringing the array of the blue-light Micro-LEDs into contact with a second-color photosensitive solution;turning on second preset blue-light Micro-LEDs of the array for conducting the polymerization on the second preset blue-light Micro-LEDs to form the at least one lens.2. The manufacturing method as claimed in claim 1 , wherein:the first color and the second color are respectively red and green, red pixels are formed after the polymerization on the first preset blue-light Micro-LEDs is finished, and green pixels are formed after the polymerization on the second preset blue-light Micro-LEDs is ...

Method for Producing a Plurality of Optoelectronic Components, and Optoelectronic Component

A method for producing a plurality of optoelectronic components are disclosed. In an embodiment, the method includes providing a substrate, epitaxially applying a sacrificial layer on the substrate, wherein the sacrificial layer has a layer thickness greater than 300 nm and comprises AlGaAs with 0 Подробнее

DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6. 1. An apparatus , comprising:a substrate;a metal layer disposed on the substrate, wherein a first distance is between an upper surface of the metal layer and the substrate in a direction perpendicular to the substrate; anda light-emitting diode disposed on the metal layer, wherein the light-emitting diode comprises a light-emitting diode body and an electrode, the electrode is bonded to the metal layer, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface faces the substrate, and in the direction, a second distance is between the first surface and the second surface, wherein a ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.2. The apparatus of claim 1 , further comprising:a wavelength conversion layer disposed on the light-emitting diode; anda light-blocking pattern layer disposed adjacent to the wavelength ...

LIGHT EMITTING DIODE STRUCTURE AND METHOD OF MANUFACTURING THEREOF

A light emitting diode structure includes a semiconductor stack and a supporting breakpoint. The semiconductor stack includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer, and the second semiconductor layer has a type that is different from the first semiconductor layer. The supporting breakpoint is on the light emitting surface. The light emitting diode structure can be applied in wide color gamut (WCG) backlight module or ultra-thin backlight module. 1. A light emitting diode structure , comprising: a first semiconductor layer, wherein the first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture;', 'a light emitting layer disposed on the first semiconductor layer; and', 'a second semiconductor layer disposed on the light emitting layer, wherein the second semiconductor layer has a type that is different from the first semiconductor layer; and, 'a semiconductor stack comprisinga supporting breakpoint on the light emitting surface.2. The light emitting diode structure of claim 1 , wherein the first semiconductor layer comprises a first portion and a second portion claim 1 , the second portion is disposed on the first portion claim 1 , and a width of the first portion is greater than a width of the second portion.3. The light emitting diode structure of claim 1 , wherein the first semiconductor layer comprises a doped semiconductor layer and an undoped semiconductor layer claim 1 , the doped semiconductor layer is between the light emitting layer and the undoped semiconductor layer claim 1 , and the light emitting surface is on the undoped semiconductor layer.4. The light emitting diode structure ...

Optoelectronic Semiconductor Component, and Method for Producing an Optoelectronic Semiconductor Component

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body with a contact metallization located at a main surface of the semiconductor body, a protective layer partially covering the semiconductor body and the contact metallization, a substrate firmly bonded to the semiconductor body at the main surface, a recess and a terminal layer arranged within the recess, wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, and wherein the terminal layer electrically contacts the contact metallization and a connection layer located between the substrate and the semiconductor body, the connection layer including a first region and a second region, wherein the first region is bonded together with the second region without using a bonding agent. 115-. (canceled)16. An optoelectronic semiconductor component comprising:a semiconductor body with a contact metallization located at a main surface of the semiconductor body;a protective layer partially covering the semiconductor body and the contact metallization;a substrate firmly bonded to the semiconductor body at the main surface,a recess and a terminal layer arranged within the recess,wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, andwherein the terminal layer electrically contacts the contact metallization; anda connection layer located between the substrate and the semiconductor body, the connection layer comprising a first region and a second region,wherein the first region is bonded together with the second region without using a bonding agent.17. The optoelectronic semiconductor ...

GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR

The present invention provides a Group III nitride semiconductor light-emitting device which attains suitable light extraction to the outside by reflecting the light directed from a substrate to a semiconductor layer toward the substrate, and a production method therefor. The light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of dielectric multilayer films. The dielectric multilayer films are disposed on the first surface of the substrate. The first surface of the substrate has at least a bottom surface. The buffer layer is formed on at least a part of the bottom surface. The dielectric multilayer films have inclined planes inclined to the bottom surface. The n-type semiconductor layer is formed on the buffer layer and the inclined planes of the dielectric multilayer films. 1. A Group III nitride semiconductor light-emitting device comprising:a substrate having a first surface;a buffer layer disposed on at least a part of the first surface of the substrate;a first conduction type first semiconductor layer disposed on the buffer layer;a light-emitting layer disposed on the first semiconductor layer; anda second conduction type second semiconductor layer on the light-emitting layer;wherein a plurality of dielectric multilayer films are provided on the first surface side of the substrate;the first surface of the substrate has at least a flat surface;the buffer layer is formed on at least a part of the flat surface;each of the dielectric multilayer films has an inclined plane inclined to the flat surface; andthe first semiconductor layer is formed on the buffer layer and the inclined planes of the dielectric multilayer films.2. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the first surface of the substrate has a plurality of protrusions claim 1 , the dielectric multilayer films cover at least a part of the surfaces of ...

METHOD FOR STRUCTURING A NITRIDE LAYER, STRUCTURED DIELECTRIC LAYER, OPTOELECTRONIC COMPONENT, ETCHING METHOD FOR ETCHING LAYERS, AND AN ENVIRONMENT SENSOR

The invention relates to a method for structuring a nitride layer (), comprising the following steps: A) providing a nitride layer () formed with silicon nitride of a first type, B) defining regions () of said nitride layer () to be transformed, and C) inserting the nitride layer () into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer () regions () to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer () regions () remain at least 80% untransformed. 1. Method for patterning a nitride layer having the following steps:A) providing the nitride layer, which is formed with a silicon nitride of a first type,B) defining regions to be transformed of the nitride layer,C) introducing the nitride layer into a transformation chamber for the duration of a transformation period, wherein the transformation period is selected such that at least 80% of the regions to be transformed of the nitride layer are transformed into oxide regions, which are formed with a silicon oxide.2. Method according to claim 1 ,wherein remaining regions of the nitride layer remain at least 60%, preferably at least 80% untransformed.3. Method according to claim 1 ,wherein the process conditions for transformation in the transformation chamber during method step C) are selected as follows:temperature of at least 80° C. and at most 200° C.,pressure of at least 1 bar and at most 15 bar, and/orrelative humidity of at least 80% and at most 99%.4. Method according to claim 1 ,wherein in step A) the nitride layer is applied to a carrier in a deposition chamber by plasma-enhanced chemical vapor deposition (PECVD), wherein at least one of the deposition conditions in the deposition chamber is selected as follows:{'sub': 4', '2, 'SiHflow rate of at least 4.5% and at most 5.5% of the nitrogen (N) flow rate,'}{'sub': 3', '2, 'NHflow rate of at least 14. ...

Method for Producing a Semiconductor Body

A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. The method further includes applying a contact layer to the first mask layer and the bottom face of the at least one recess using a directional deposition method and applying a passivation layer to the side face of the at least one recess. 120-. (canceled)21. A method comprising:A) providing a semiconductor body;B) applying a first mask layer and a second mask layer to the semiconductor body, wherein the second mask layer is applied unpatterned to the semiconductor body and the first mask layer is applied patterned with at least one first mask opening to the second mask layer;C) forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening;D) applying a contact layer to the first mask layer and the bottom face of the at least one recess using a directional deposition method; andE) applying a passivation layer to the side face of the at least one recess.22. The method according to claim 21 , wherein the contact layer is applied by evaporation.23. The method according to claim 21 , wherein the contact layer comprises a metal and/or a transparent conductive oxide.24. The method according to claim 21 , wherein method step E ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME

A semiconductor light emitting device includes a semiconductor laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, the first conductive semiconductor layer and the active layer defining a first trench exposing a first portion of the first conductive semiconductor layer, and a second trench exposing a second portion of the first conductive semiconductor layer, a first finger electrode disposed in the exposed portion of the first conductive semiconductor layer in the first trench, an insulating layer disposed on an internal surface of the second trench, and a second finger electrode disposed on the insulating layer in the second trench and electrically connected to the second conductive semiconductor layer. 1. A semiconductor light emitting device comprising:a semiconductor laminate comprising a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first trench and a second trench penetrating through the second conductive semiconductor layer and the active layer to first and second portions of the first conductive semiconductor layer, respectively;a first finger electrode disposed on the first portion of the first conductive semiconductor layer in the first trench;an insulating layer disposed on an internal surface of the second trench; anda second finger electrode disposed on the insulating layer in the second trench and electrically connected to the second conductive semiconductor layer.2. The semiconductor light emitting device of claim 1 , further comprising a current spreading layer disposed on the second conductive semiconductor layer and electrically connected to the second finger electrode.3. The semiconductor light emitting device of claim 2 , ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor light emitting device is provided. The device includes a semiconductor stack, insulating layers, a current spreading layer, and first and second finger electrodes. The semiconductor stack includes a first and second conductivity-type semiconductor layers, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer. A first insulating layer is disposed on an inner sidewall of the trench. The current spreading layer is disposed on the second conductivity-type semiconductor layer. The first finger electrode is disposed on the exposed portion of the first conductivity-type semiconductor layer. The second insulating layer is disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode. The second finger electrode is disposed in the trench and connected to the current spreading layer. 1. A semiconductor light emitting device comprising:a semiconductor stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer;a first insulating layer disposed on an inner sidewall of the trench;a current spreading layer disposed on the second conductivity-type semiconductor layer;a first finger electrode disposed on the portion of the first conductivity-type semiconductor layer;a second insulating layer disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode; anda second finger electrode disposed in the trench and connected to the current spreading layer. ...

DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6. 1. A display apparatus , comprising:a substrate;a transistor disposed on the substrate;a metal layer disposed on the transistor and electrically connected to the transistor, wherein a first distance is between an upper surface of the metal layer and the substrate in a direction perpendicular to the substrate; anda light-emitting diode disposed on the metal layer, wherein the light-emitting diode comprises a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction, a second distance is between the first surface and the second surface, wherein a ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.2. The display ...

LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME

A light-emitting device includes a metal substrate, insulative portions, a plurality of LEDs, a support frame, and a light-transmissive encapsulation resin. The metal substrate includes electrode portions. The insulative portions separate the electrode portions from each other so that one serves as an anode and another serves as a cathode. The LEDs are positioned at a surface of the metal substrate. The LEDs each lie over a corresponding one of the insulative portions and are each electrically coupled to corresponding ones of the electrode portions. The support frame surrounds an outer perimeter of the metal substrate, and includes inner and outer wall portions. The inner wall portion is formed within a recessed groove along the outer perimeter of the metal substrate. The outer wall portion covers an outer perimeter surface of the metal substrate. The light-transmissive encapsulation resin encapsulates at least partially the LEDs. 110-. (canceled)11. A light-emitting device comprising:a metal substrate comprising electrode portions in a topside of the metal substrate;a first recessed groove along a perimeter of the topside of the metal substrate;insulative portions each separating corresponding ones of the electrode portions from each other so that one of the electrode portions serves as an anode and an other of the electrode portions serves as a cathode, the insulative portions each comprising an electrode separation groove extending through the metal substrate and an insulative resin filling the electrode separation groove and exposed to a backside of the metal substrate;a plurality of LEDs at the topside of the metal substrate, each of the LEDs straddling a corresponding one of the insulative portions and being electrically coupled to corresponding ones of the electrode portions;a support frame at the perimeter of the topside of the metal substrate, the support frame comprising an inner wall portion and an outer wall portion each being integral with the support ...