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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 63432. Отображено 100.
05-01-2012 дата публикации

Optoelectronic Semiconductor Component and Display Means

Номер: US20120001208A1
Принадлежит: Individual

In at least one embodiment, an optoelectronic semiconductor component includes at least two optoelectronic semiconductor chips, which are designed to emit electromagnetic radiation in mutually different wavelength ranges when in operation. The semiconductor chips are mounted on a mounting surface of a common carrier. Furthermore, the optoelectronic semiconductor component contains at least two non-rotationally symmetrical lens bodies, which are designed to shape the radiation into mutually different emission angles in two mutually orthogonal directions parallel to the mounting surface. One of the lens bodies is here associated with or arranged downstream of each of the semiconductor chips in an emission direction.

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12-01-2012 дата публикации

Light emitting module

Номер: US20120007076A1
Автор: Yun Min CHO
Принадлежит: LG Innotek Co Ltd

Disclosed is a light emitting module capable of representing improved heat radiation and improved light collection. there is provided a light emitting module. The light emitting module includes a metallic circuit board formed therein with a cavity, and a light emitting device package including a nitride insulating substrate attached in the cavity of the metallic circuit board, at least one pad part on the nitride insulating substrate, and at least one light emitting device attached on the pad part.

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12-01-2012 дата публикации

Light emitting device and method of manufacturing the same

Номер: US20120007120A1

Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.

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12-01-2012 дата публикации

Illumination device with remote luminescent material

Номер: US20120007130A1
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

The invention provides an illumination device comprising a light source and a transmissive arrangement. The light source is arranged to generate light source light and comprises a light emitting device (LED), arranged to generate LED light and a carrier comprising a first luminescent material. The carrier is in contact with the LED and the first luminescent material is arranged to convert at least part of the LED light into first luminescent material light. The transmissive arrangement of a second luminescent material is arranged remote from the light source and is arranged to convert at least part of the LED light or at least part of the first luminescent material light and/or at least part of the LED light. The invention overcomes current limitations of remote luminescent material systems in spot lighting. In addition, an extremely simple way of realizing light sources with various correlated colour temperatures is allowed, based on just a single type of white (or whitish) light source in combination with various (red-orange) remote luminescent materials.

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12-01-2012 дата публикации

Method of fabricating light emitting device

Номер: US20120009701A1
Автор: Yu-Sik Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of fabricating a light emitting device includes forming a plurality of light emitting elements on light emitting element mounting regions, respectively, of a substrate, forming lens supports on the light emitting element mounting regions, respectively, are raised relative to isolation regions of the substrate located between neighboring ones of the light emitting element mounting regions, and forming lenses covering the light emitting elements on the lens support patterns, respectively.

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12-01-2012 дата публикации

Method for manufacturing cured product of thermosetting resin composition and cured product obtained thereby

Номер: US20120010373A1
Автор: Mizuki Yamamoto
Принадлежит: Nitto Denko Corp

The present invention relates to a method for producing a cured product of a thermosetting resin composition, the method including: heating a thermosetting resin composition including the following ingredients (A) to (C) at a temperature of 100 to 200° C. for 1 to 60 minutes; and then further heating the thermosetting resin composition at a temperature of 220 to 350° C. for 10 to 6,000 minutes, thereby curing the thermosetting resin composition: (A) an allyletherified phenol resin; (B) an epoxy resin; and (C) a curing accelerator.

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26-01-2012 дата публикации

Phosphor member, method of manufacturing phosphor member, and illuminating device

Номер: US20120018761A1
Автор: Mika Honda
Принадлежит: Konica Minolta Opto Inc

In the present invention, provided is a phosphor member capable of improving a yield and an extraction rate, in addition to high environmental tolerance, high heat resistance, high durability and a high color rendering property, by which variations of color and an amount of light are reduced, and also provided are a method of manufacturing the phosphor member and an illuminating device. Disclosed is a phosphor member prepared separately from an LED light source constituting a white illuminating device, wherein the phosphor member possesses phosphor particles and an inorganic layer having been subjected to coating and a heat treatment.

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02-02-2012 дата публикации

Package of light emitting device and method of manufacturing the same

Номер: US20120025240A1
Автор: Shen-Bo Lin
Принадлежит: Advanced Optoelectronic Technology Inc

A method of manufacturing a package of light emitting device includes the following steps: providing a light emitting element and positioning the light emitting element at a bottom of a reflecting cup; providing phosphors and a compound of epoxy resin and silicone, and mixing the phosphors and the compound of epoxy resin and silicone to obtain a mixture by a process of kneading; and encapsulating the light emitting element with the mixture to form an encapsulant received in the reflecting cup.

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02-02-2012 дата публикации

Surface mounted led structure and packaging method of integrating functional circuits on a silicon

Номер: US20120025242A1
Принадлежит: Apt Electronics Co ltd

The present invention relates to a surface mounted LED structure of integrating functional circuits on a silicon substrate, comprising the silicon substrate and an LED chip. Said silicon substrate has an upper surface of planar structure without grooves. An oxide layer covers the upper surface of the silicon substrate, and metal electrode layers are arranged in the upper surface of the oxide layer. The upper surfaces of said metal electrode layers are arranged with metal bumps, and the LED chip is flip-chip mounted to the silicon substrate. Two conductive metal pads are arranged on the lower surface of said silicon substrate, said conductive metal pads are electrically connected to the metal electrode layers on the upper surface of the silicon substrate by a metal lead arranged on the side wall of the silicon substrate. A heat conduction metal pad is arranged on the corresponding lower, surface of the silicon substrate just below the LED chip. Peripheral functional circuits required by LED are integrated on the upper surface of said silicon substrate. The structure of the present invention has advantages of good heat dissipation effect and small volume, and direct integration of functional circuits such as protection and drive circuits etc. in the silicon substrate achieves large-scale production package of wafer level, reducing the cost of packaging and lighting fixture.

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02-02-2012 дата публикации

Led package and method for manufacturing the same

Номер: US20120025243A1
Автор: Shen-Bo Lin
Принадлежит: Advanced Optoelectronic Technology Inc

An LED package includes a substrate, an LED chip, a bounding dam, and a first encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The LED chip is mounted on the first surface of the substrate. The bounding dam is formed on the first surface of the substrate and surrounds the LED chip. The bounding dam and the substrate cooperatively define a receiving space. The bounding dam is made of thermoset resin. The first encapsulation is formed in the receiving space and encloses the LED chip.

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02-02-2012 дата публикации

Semiconductor light emitting device substrate strips and packaged semiconductor light emitting devices

Номер: US20120025254A1
Принадлежит: Cree Inc

Semiconductor light emitting device packaging methods include fabricating a substrate configured to mount a semiconductor light emitting device thereon. The substrate may include a cavity configured to mount the semiconductor light emitting device therein. The semiconductor light emitting device is mounted on the substrate and electrically connected to a contact portion of the substrate. The substrate is liquid injection molded to form an optical element bonded to the substrate over the semiconductor light emitting device. Liquid injection molding may be preceded by applying a soft resin on the electrically connected semiconductor light emitting device in the cavity. Semiconductor light emitting device substrate strips are also provided.

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02-02-2012 дата публикации

Color-temperature-tunable device

Номер: US20120025695A1
Принадлежит: Everlight Electronics Co Ltd

A color-temperature-tunable device comprises a first light emitting diode (LED) chip group comprising at least one first blue LED chip that emits a first light having a first peak wavelength, a second LED chip group comprising at least one second blue LED chip that emits a second light having a second peak wavelength different from the first peak wavelength, and a wavelength converting layer above at least a portion of the first LED chip group and a portion of the second LED chip group. The first LED chip group and the second LED chip group are driven by a first driving current and a second driving current, respectively.

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09-02-2012 дата публикации

Non-radiatively pumped wavelength converter

Номер: US20120032142A1
Принадлежит: 3M Innovative Properties Co

A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.

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09-02-2012 дата публикации

White led device and manufacturing method thereof

Номер: US20120032217A1
Автор: Jui-Kang Yen
Принадлежит: SemiLEDs Optoelectronics Co Ltd

The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.

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09-02-2012 дата публикации

Packaged light emitting diodes including phosphor coating and phosphor coating systems

Номер: US20120032220A1
Принадлежит: Cree Inc

Light emitting structures are disclosed that can include a semiconductor light emitting diode (LED) that includes a p-n junction active layer. A first layer can include a binder material having a thickness that is less than about 1000 μm, wherein the first layer is directly on the LED. A second layer can include phosphor particles, where the second layer can have a thickness that is less than about 1000 μm and can be directly on the first layer so that the first layer is between the LED and the second layer.

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09-02-2012 дата публикации

Light emitting apparatus and method for manufacturing thereof

Номер: US20120032578A1
Принадлежит: Sharp Corp

A light emitting apparatus includes a light emitting device emitting primary light and a wavelength conversion unit absorbing a part of the primary light to emit secondary light. The wavelength conversion unit includes a first wavelength conversion unit containing at least a nanocrystalline phosphor and a second wavelength conversion unit containing a rare-earth-activated phosphor or a transition-metal-element-activated phosphor. In the light emitting device, the first wavelength conversion unit and the second wavelength conversion unit are closely stacked in order.

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16-02-2012 дата публикации

Process for producing fluorescent substance and fluorescent substance produced thereby

Номер: US20120037849A1
Принадлежит: Toshiba Corp

The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a process for producing the fluorescent substance. This fluorescent substance is an oxynitride phosphor having a low paramagnetic defect density and comprising aluminum, silicon, either or both of oxygen and nitrogen, and a metal element M, provided that the metal element M is partly replaced with an emission center element R. That phosphor can be produced by the steps of: subjecting a mixture of starting materials to heat treatment under a nitrogen atmosphere so as to obtain an intermediate fired product, and then further subjecting the intermediate fired product to heat treatment under an atmosphere of nitrogen-hydrogen mixed gas.

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16-02-2012 дата публикации

Surface-modified silicate luminophores

Номер: US20120037850A1
Принадлежит: Litec LLL GmbH, Seoul Semiconductor Co Ltd

A surface-modified silicate luminophore includes a silicate luminophore and a coating includes at least one of (a) a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and (b) a combination of the fluorinated coating and at least one moisture barrier layer. The moisture barrier layer includes MgO, Al 2 O 3 , Y 2 O 3 , La 2 O 3 , Gd 2 O 3 , Lu 2 O 3 , and SiO 2 or the corresponding precursors, and the coating is disposed on the surface of the silicate luminophore.

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16-02-2012 дата публикации

Led package

Номер: US20120037936A1
Принадлежит: Foxsemicon Integrated Technology Inc

A LED package includes a substrate, at least one LED chip, a transparent adhesive and a lens. The at least one LED chip is mounted on the substrate. The transparent adhesive is filled between the LED chip and the lens. A number of through holes is regularly defined in an optical non-effective portion of the lens. The through holes are configured for increasing the air convection between inside and outside of the lens.

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16-02-2012 дата публикации

Light emitting diode

Номер: US20120037939A1
Автор: Youji Urano

A light emitting diode comprises a LED chip, a package in which the LED chip is housed, and a connection electrode electrically connected to an element electrode with which the LED chip is provided. The package is a laminated body comprising at least a submount substrate and a frame body, and the LED chip is fixedly-mounted on one surface of the submount substrate, and the frame body is laminated on the one surface of the submount substrate and is provided with a through-hole in which the LED chip is stored. The connection electrode is formed on at least either the one surface of the submount substrate or one surface of the frame body facing toward a light irradiation direction, while being exposed in the light irradiation direction. Therefore, the light emitting diode can improve both heat dissipation performance and density of LED placement together.

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16-02-2012 дата публикации

Light emitting device

Номер: US20120037944A1
Автор: Kenji Takine
Принадлежит: Nichia Corp

A light emitting device, which has: a light emitting element; a package that comprises a concavity for holding the light emitting element, and that has on its side wall where the concavity is integrally formed a light reflector for reflecting light from the light emitting element and a light transmitter for transmitting light from the light emitting element to the outside.

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23-02-2012 дата публикации

Light emitting device and manufacturing method thereof

Номер: US20120043573A1
Принадлежит: Toshiba Corp

A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 μm or more. (M 1−x1 Eu x1 ) 3−y Si 13−z Al 3+z O 2+u N 21−w   (1) (In the equation ( 1 ), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0<x1<1, −0.1<y<0.3, −3<z≦1, −3<u−w≦1.5)

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01-03-2012 дата публикации

Optoelectronic semiconductor bodies having a reflective layer system

Номер: US20120049228A1
Принадлежит: OSRAM Opto Semiconductors GmbH

An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semiconductor layer sequence ( 10 ). The first radiation-permeable layer ( 21 ) contains a first dielectric material. Between the first radiation-permeable layer ( 21 ) and the metal layer ( 23 ) there is disposed a second radiation-permeable layer ( 22 ) which contains an adhesion-improving material. The metal layer ( 23 ) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer ( 23 ) is improved in comparison with the adhesion on the first dielectric material.

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01-03-2012 дата публикации

Semiconductor light emitting device and vehicle light

Номер: US20120051075A1
Принадлежит: Stanley Electric Co Ltd

A vehicle light is provided which can form a light distribution pattern having a clear cut-off line. The vehicle light can include a semiconductor light emitting device as a light source. The semiconductor light emitting device can include a semiconductor light emitting element having a light emission surface thereof having a first end and a second end and at least one light extracting layer deposited on the light emission surface and including a wavelength conversion layer, and the light extracting layer includes an optical characteristic that can change from the first end to the second end in a direction parallel to the light emission surface so that the semiconductor light emitting device forms a luminance distribution with a maximum luminance at the first end and a minimum luminance at the second end.

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08-03-2012 дата публикации

Led package

Номер: US20120056233A1
Принадлежит: Advanced Optoelectronic Technology Inc

An LED package includes a base, an LED chip and an encapsulation. The LED chip is mounted on the base. The encapsulation encapsulates the LED chip. A heat dissipating plate is sandwiched between the LED chip and the base. The heat dissipating plate includes a first surface and a second surface. The LED chip is mounted on the first surface of the heat dissipating plate and has an interface engaging with the first surface of the heat dissipating plate. The first surface of the heat dissipating plate has an area greater than that of the interface. The second surface of the heat dissipating plate is attached to the base.

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08-03-2012 дата публикации

Light emitting device

Номер: US20120057339A1
Принадлежит: Toshiba Corp

A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

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15-03-2012 дата публикации

Light emitting device and manufacturing method of light emitting device

Номер: US20120061703A1
Автор: Mitsuhiro Kobayashi
Принадлежит: Toshiba Corp

A light emitting device may include a base provided with a recess portion in a side surface thereof, a light emitting element mounted on a main surface of the base, a first resin body filled in an inside of the recess portion, and covering at least the main surface and the light emitting element, a second resin body covering an outside of the first resin body from the main surface side to at least a position of the lowermost end of the recess portion in a direction orthogonal to the main surface, and phosphor, provided in the second resin body, for absorbing light emitted from the light emitting element and then emitting light having a different wavelength.

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15-03-2012 дата публикации

Red light-emitting flourescent substance and light-emitting device employing the same

Номер: US20120062106A1
Принадлежит: Toshiba Corp

The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M 1-x EC x ) a M 1 b AlO c N d   (1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M 1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0<x<0.2, 0.55<a<0.80, 2.10<b<3.90, 0<c≦0.25 and 4<d<5, respectively. This substance emits luminescence having a peak in the wavelength range of 620 to 670 nm when excited by light of 250 to 500 nm.

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15-03-2012 дата публикации

Light source device and display device provided with same

Номер: US20120063150A1
Автор: Hideto Takeuchi
Принадлежит: Individual

A light source device includes a circuit board having a LED mounted on a surface, a lens attached to the surface so as to diffuse light emitted from the LED, a reflecting sheet having a through hole in the inside of which the lens is disposed and reflecting light emitted from the LED at an opposite side of the surface, and a restricting member which is disposed at one of an edge of the through hole in the reflecting sheet and the lens, and restricts a deviation of the reflecting sheet in a direction departing from the surface.

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22-03-2012 дата публикации

Micro-structure phosphor coating

Номер: US20120068208A1

An optical emitter includes micro-structure phosphor coating on a light-emitting diode die mounted on a package substrate. The micro-structures are transferred onto a micro-structure phosphor coating precursor by patterning and curing the precursor or by curing the precursor through a mold. The micro-structures are half spheroids, three-sided pyramids, or six-sided pyramids.

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22-03-2012 дата публикации

Phosphor particle group and light emitting apparatus using the same

Номер: US20120068595A1
Принадлежит: Sharp Corp

Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a β-type SiAlON substantially represented by a general formula: EuaSibAlcOdNe, where 0.005≦a≦0.4, b+c=12, d+e=16, wherein 60% or more of the phosphor particle group is composed of the phosphor particles in which a value obtained by dividing a longer particle diameter by a shorter particle diameter is greater than 1.0 and not greater than 3.0. A high-efficiency and stable light emitting apparatus using a β-type SiAlON, which includes a light converter using the phosphor particle group, and a phosphor particle group therefor are also provided.

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22-03-2012 дата публикации

Dc-driven electroluminescence device and light emission method

Номер: US20120068620A1
Автор: Takuyoshi Ishimura
Принадлежит: Kobundo Printing Co Ltd

An inorganic electroluminescence device has a structure including a phosphor layer sandwiched between a first electrode and a second electrode; and a semiconductor structure in which N-type semiconductors and a P-type semiconductor, made of inorganic semiconductor materials, are joined to form an NPN type structure. The phosphor is made of an inorganic substance. The first electrode is to be a cathode and is formed on an insulating glass substrate. The second electrode is to be an anode and is disposed opposite the first electrode. The semiconductor structure is disposed between the cathode that is the first electrode and the phosphor layer.

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22-03-2012 дата публикации

Multi-chip led devices

Номер: US20120069564A1
Принадлежит: Cree Inc

Multi-chip LED devices are described. Embodiments of the present invention provide multi-chip LED devices with relatively high efficiency and good color rendering. The LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The optical element may be molded from silicone. The LED chips may be connected in parallel. In some embodiments, the LED device includes a submount, which may be made of a ceramic material such as alumina or aluminum nitride. Wire bonds can be connected to the LED chips so that all the wire bonds tend the outside of a group of LED chips. Various sizes and types of LED chips may be used, including vertical LED chips and sideview LED chips.

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22-03-2012 дата публикации

Method of making a light emitting device having a molded encapsulant

Номер: US20120070921A1
Принадлежит: 3M Innovative Properties Co

Disclosed herein is a method of making a light emitting device having an LED die and a molded encapsulant made by polymerizing at least two polymerizable compositions. The method includes: (a) providing an LED package having an LED die disposed in a reflecting cup, the reflecting cup filled with a first polymerizable composition such that the LED die is encapsulated; (b) providing a mold having a cavity filled with a second polymerizable composition; (c) contacting the first and second polymerizable compositions; (d) polymerizing the first and second polymerizable compositions to form first and second polymerized compositions, respectively, wherein the first and second polymerized compositions are bonded together; and (e) optionally separating the mold from the second polymerized composition. Light emitting devices prepared according to the method are also described.

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05-04-2012 дата публикации

Light emitting diode package and method of making the same

Номер: US20120080693A1
Принадлежит: Touch Micro System Technology Inc

The light emitting diode package of the present invention uses photosensitive materials to form phosphor encapsulations or a phosphor layer, which can be fabricated by means of semiconductor processes in batch. Also, the concentration of phosphors in individual regions can be accurately and easily controlled by a laser printing process or by light-through holes. Accordingly, the optic effects of light emitting diode packages can be accurately adjusted.

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05-04-2012 дата публикации

Led encapsulation process and shield structure made thereby

Номер: US20120081000A1
Принадлежит: Power Data Communications Co Ltd

The present invention discloses an LED encapsulation process and a shield structure made thereby. Firstly, a first encapsulation layer is provided, phosphor powder is uniformly disposed on a surface of the first encapsulation layer, and a second encapsulation layer is disposed on the phosphor powder to fully cover the first encapsulation layer so that the phosphor powder is sandwiched between the two encapsulation layers to ensure its arrangement position. Finally, the aforementioned members are heated and stamped to form one piece which is cut into a required shield shape.

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12-04-2012 дата публикации

Led package, and mold and method of manufacturing the same

Номер: US20120086031A1
Принадлежит: Advanced Optoelectronic Technology Inc

The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is disposed on the top of the first substrate to cover the wires and electrodes. A fluorescent layer is disposed on the top of the second substrate to cover the LED chip. The present disclosure also provides a mold and a method of manufacturing the LED package.

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12-04-2012 дата публикации

Wavelength conversion component

Номер: US20120087105A1
Принадлежит: Intematix Corp

A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component comprises a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. In addition, the color appearance of the lighting apparatus in its OFF state can be improved by implementing the light diffusing layer in combination with the wavelength conversion layer. Moreover, significant reductions can be achieved in the amount phosphor materials required to implement phosphor-based LED devices.

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19-04-2012 дата публикации

LED arrangement with an improved light yield and process for operating LED arrangement with an improved light yield

Номер: US20120092851A1
Автор: Juergen Czaniera
Принадлежит: Atmos Medizintechnik GmbH and Co KG

An LED arrangement ( 10, 20 ) has a luminescence-conversion layer ( 3, 23 ) which is positioned on an LED chip ( 2, 22 ) and onto which at least a portion of the light reflected by a reflector ( 6, 27 ) is guided in such a way that an image of the LED chip is mapped or copied onto the LED chip. A process for operating a LED arrangement is implemented by: producing light by means of a LED chip; reflecting a portion of the light produced by the LED chip; and coupling the light into an optical system which has an acceptance requirement, while only light that fulfills the acceptance requirement can be coupled into the optical system and the light is reflected onto a luminescence-conversion layer in such a way that an image of the LED chip is mapped onto the LED chip.

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26-04-2012 дата публикации

Light emitting diode package

Номер: US20120098000A1
Автор: Jian-Shihn Tsang
Принадлежит: Hon Hai Precision Industry Co Ltd

An exemplary light emitting package includes a base, an LED chip mounted on the base, an encapsulant layer encapsulating the LED chip and a phosphor layer located above and separated from the LED chip. The phosphor layer includes a phosphor scattered portion and a clear portion without phosphor therein. An area of the phosphor scattered portion is smaller than the light emitting area of the encapsulant layer from which light emitted upwardly from the LED chip leaves the encapsulant layer.

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26-04-2012 дата публикации

Optoelectronic semiconductor component

Номер: US20120098015A1
Автор: Gertrud Krauter
Принадлежит: OSRAM Opto Semiconductors GmbH

An optoelectronic semiconductor component includes a housing main body and at least one optoelectronic semiconductor chip mounted on the housing main body. In operation, the optoelectronic semiconductor chip emits primary radiation including an ultraviolet radiation fraction. The semiconductor component also includes a filter medium that absorbs the ultraviolet radiation fraction and is located at least in part between the semiconductor chip and the housing main body and/or between the semiconductor chip and an optical component.

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26-04-2012 дата публикации

Light emitting diode package and projection apparatus

Номер: US20120099085A1
Принадлежит: Young Optics Inc

A light emitting diode package including a carrier, at least one LED chip, and a light guide element. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and located above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side surface. The side surface connects the light transmissive body and the light incident surface. The reflective film is disposed on the side surface. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.

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26-04-2012 дата публикации

Efficient led-based illumination modules with high color rendering index

Номер: US20120099290A1
Принадлежит: Xicato Inc

An illumination module includes a light mixing cavity with an interior surface area and window that are physically separated from an LED. A portion of the window is coated with a first wavelength converting material and a portion of the interior surface area is coated with a second wavelength converting material. The window may be coated with LuAG:Ce. The window may also be coated with a third wavelength converting material with a peak emission wavelength between 615-655 nm where the spectral response of light emitted from the window is within 20% of a blackbody radiator at the same CCT. The LED may emit a light that is converted by the light mixing cavity with a color conversion efficiency ratio greater than 130 lm/W where the light mixing cavity includes two photo-luminescent materials with a peak emission wavelengths between 508-528 nm and 615-655 nm.

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26-04-2012 дата публикации

Method for distributing phosphor particulates on led chip

Номер: US20120100646A1
Принадлежит: Advanced Optoelectronic Technology Inc

A method for distributing phosphor particulates on an LED chip, includes steps of: providing a substrate having an LED chip mounted thereon; dispensing an adhesive on the chip, wherein the adhesive have positively charged phosphor particulates doped therein; providing an upper mold and a lower mold for producing an electric field through the adhesive and moving the upper mold to press the adhesive, wherein the phosphor particulates are driven by the electric field to move to a top face of the chip; and curing the adhesive and removing the upper mold and the lower mold.

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10-05-2012 дата публикации

Optical Device

Номер: US20120112165A1
Принадлежит: University of Southampton

An improved optoelectronic device is described, which employs optically responsive nanoparticles and utilises a non-radiative energy transfer mechanism. The nanoparticles are disposed on the sidewalls of one or more cavities, which extend from the surface of the device through the electronic structure and penetrate the energy transfer region. The nanoparticles are located in close spatial proximity to an energy transfer region, whereby energy is transferred non-radiatively to or from the electronic structure through non-contact dipole-dipole interaction. According to the mode of operation, the device can absorb light energy received from the device surface via the cavity and then transfer this non-radiatively or can transfer energy non-radiatively and then emit light energy towards the surface of the device via the cavity. As such, the deice finds application in light emitting devices, photovoltaic (solar) cells, displays, photodetectors, lasers and single photon devices.

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10-05-2012 дата публикации

Semiconductor light emitting device

Номер: US20120112227A1
Автор: Tomoichiro Toyama
Принадлежит: ROHM CO LTD

A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

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10-05-2012 дата публикации

Led lighting assembly

Номер: US20120112617A1
Автор: JongSoo HA

A LED lighting assembly includes a substrate defining a body and a central hole surrounded by the body, a conductive mass positioned in the central hole of the substrate, a LED chip defining a bottom attached to the conductive mass, and a shell mounted on the body and forming a room together with the body.

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10-05-2012 дата публикации

Batwing beam based led and backlight module using the same

Номер: US20120113621A1

A batwing beam is produced from an LED package having a primary LED lens by molding the LED lens directly over an LED on a package substrate. The LED lens includes a cavity over a center of the LED. The cavity surface reflects light from the LED through total internal reflection (TIR) or through a reflectivity gel coating. The cavity may be a cone or a pyramid.

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17-05-2012 дата публикации

Pixelated led

Номер: US20120119237A1
Принадлежит: 3M Innovative Properties Co

A pixelated light emitting diode (LED) and a method for pixelating an LED are described. The pixelated LED includes two or more monolithically integrated electroluminescent elements disposed adjacent each other on a substrate, wherein at least a portion of each electroluminescent element immediately adjacent the substrate includes an inverted truncated pyramidal shape. The method for pixelating an LED includes selectively removing material from the major surface of an LED to a depth below the emissive region, thereby forming an array of inverted truncated pyramid shapes. The efficiency of the pixelated LEDs can be improved by incorporating the truncated pyramidal shape. Additionally, the crosstalk between adjacent LED pixels can be reduced by incorporating the truncated pyramidal shape.

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17-05-2012 дата публикации

Light-emitting device

Номер: US20120119245A1
Автор: Tzer-Perng Chen
Принадлежит: Epistar Corp

Disclosed is a light-emitting device comprising: a carrier comprising: a first side and a second side; a semiconductor light-emitting stack layer on the first side of the carrier, the semiconductor light-emitting stack layer comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer ; and a first electrode structure electrically coupled to the second conductivity type semiconductor layer, the first electrode structure comprising: a main electrode surrounding the semiconductor light-emitting stack layer; an extending electrode extending from the main electrode onto the second conductivity type semiconductor layer; and an electrode pad coupling to the main electrode.

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24-05-2012 дата публикации

Light emitting device, manufacturing method thereof, and optical device

Номер: US20120126269A1
Автор: Yuki Tanuma
Принадлежит: ROHM CO LTD

The present invention provides a light emitting device which is capable of enhancing the radiant intensity on a single direction. The light emitting device comprises a substrate, a lens bonded to the substrate, and an LED chip bonded to the substrate and exposed in a gap clipped between the substrate and the lens, wherein the lens has a light output surface which bulges in a direction that is defined from the substrate toward the LED chip and is contained in a thickness direction of the substrate to transmit the light emitted from the LED chip.

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31-05-2012 дата публикации

Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same

Номер: US20120132857A1
Автор: Ronan P. Le Toquin
Принадлежит: Individual

Compounds of Formula I, which include both cerium and europium, may be useful as phosphors in solid state light emitting devices. Light emitting devices including such phosphors may emit warm white light.

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31-05-2012 дата публикации

Arrangement for emitting mixed light

Номер: US20120134134A1
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

An arrangement for emitting mixed light including a primary and secondary radiation with at least one first electroluminescent light-source for emitting first primary radiation, at least one second electroluminescent light-source for emitting second primary radiation, and a light-converting element for absorbing at least one of the primary radiations and re-emitting the secondary radiation. The light-converting element is arranged so that the entire proportion of primary radiation in the mixed light passes through the light-converting element. The light-converting element is a ceramic light-converting material whose microstructure is selected to be such that the color point of the mixed light of primary and second radiation is substantially independent of the angle of viewing.

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31-05-2012 дата публикации

Optoelectronic Module

Номер: US20120134147A1
Автор: Martin Moeck
Принадлежит: OSRAM GMBH

An optoelectronic module ( 1 ) having a reflector ( 4 ), which comprises an aperture ( 40 ) and a structured reflector surface ( 41 ), and having at least two connection carriers ( 3 ), on each of which there is arranged at least one component ( 2 ) provided for producing radiation. The connection carriers are arranged in the interior of the reflector. At least two components of the module exhibit different emission characteristics when the module is in operation, a main emission direction being assigned to each of the two components. The radiation emitted by the components in their respective main emission directions is deflected at least in part in the direction of the aperture by means of the structured reflector surface.

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07-06-2012 дата публикации

Solid-state light emitting devices and signage with photoluminescence wavelength conversion and photoluminescent compositions therefor

Номер: US20120138874A1
Принадлежит: Intematix Corp

A photoluminescent composition (“phosphor ink”) comprises a suspension of particles of at least one blue light (380 nm to 480 nm) excitable phosphor material in a light transmissive liquid binder in which the weight loading of at least one phosphor material to binder material is in a range 40% to 75%. The binder can be U.V. curable, thermally curable, solvent based or a combination thereof and comprise a polymer resin; a monomer resin, an acrylic, a silicone or a fluorinated polymer. The composition can further comprise particles of a light reflective material suspended in the liquid binder. Photoluminescence wavelength conversion components; solid-state light emitting devices; light emitting signage surfaces and light emitting signage utilizing the composition are disclosed.

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07-06-2012 дата публикации

Optoelectronic component

Номер: US20120139003A1

An optoelectronic component including a connection carrier including an electrically insulating film at a top side of the connection carrier, an optoelectronic semiconductor chip at the top side of the connection carrier, a cutout in the electrically insulating film which encloses the optoelectronic semiconductor chip, and a potting body surrounding the optoelectronic semiconductor chip, wherein a bottom area of the cutout is formed at least regionally by the electrically insulating film, the potting body extends at least regionally as far as an outer edge of the cutout facing the optoelectronic semiconductor chip, and the cutout is at least regionally free of the potting body.

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21-06-2012 дата публикации

Light emitting device having a transparent thermally conductive layer

Номер: US20120153316A1
Автор: Rene Helbing
Принадлежит: Bridgelux Inc

A light emitting device and method of producing the same is disclosed. The light emitting device includes a transparent thermally conductive layer, a phosphor layer provided on the transparent thermally conductive layer, wherein the phosphor layer is not enclosed within any layers not containing phosphor, and at least one light emitting semiconductor arranged to emit light toward the transparent thermally conductive layer and the phosphor layer.

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21-06-2012 дата публикации

Led module, led lamp, and illuminating apparatus

Номер: US20120155061A1
Принадлежит: Panasonic Corp

To constrain reductions in luminous efficacy while enhancing the color rendition index, the LED module includes a blue LED, at least one variety of phosphor particles excited by the outgoing light from the blue LED, and neodymium glass particles that include neodymium ions absorbing the outgoing light from the phosphor particles in a predetermined wavelength band.

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28-06-2012 дата публикации

Lens, optoelectronic component comprising a lens and method for producing a lens

Номер: US20120162783A1
Принадлежит: OSRAM Opto Semiconductors GmbH

A lens includes a main body and a potting material. The main body includes a first major face, a second major face and at least one cavity arranged on the first major face. The potting material is arranged in the cavity and includes at least one diffuser which scatters radiation of at least one wavelength range.

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28-06-2012 дата публикации

Light source with tunable cri

Номер: US20120162979A1

A light-emitting device with at least two light-emitting dies encapsulated with two different types of the wavelength-converting materials is disclosed. Each of the wavelength-converting materials is configured to produce a visible light from a narrow band light near UV region produced by the light-emitting dies, but with different correlated color temperatures (CCT) and different spectral contents. The combination of the two visible light forms the desired visible white light. The Color rendering index of the light-emitting device is tunable by adjusting the supply current to the light-emitting dies. In another embodiment, a light module with tunable CRI for an illumination system is disclosed.

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28-06-2012 дата публикации

Method and apparatus for depositing phosphor on semiconductor-light emitting device

Номер: US20120164759A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method and apparatus for depositing a phosphor using transfer molding. The method includes: forming a plurality of light-emitting devices on a wafer and rearranging the light-emitting devices on a carrier substrate according to luminance characteristics of the plurality of light-emitting devices by examining the luminance characteristics of the plurality of light-emitting devices; depositing the phosphor on the rearranged light-emitting devices using transfer molding; and separating the light-emitting devices on the carrier substrate.

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28-06-2012 дата публикации

Method of Manufacturing a Printable Composition of a Liquid or Gel Suspension of Diodes

Номер: US20120164796A1
Принадлежит: NthDegree Technologies Worldwide Inc

An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary method of making a liquid or gel suspension of diodes comprises: adding a viscosity modifier to a plurality of diodes in a first solvent; and mixing the plurality of diodes, the first solvent and the viscosity modifier to form the liquid or gel suspension of the plurality of diodes. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.

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05-07-2012 дата публикации

Solid element device and method for manufacturing the same

Номер: US20120171789A1

A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

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05-07-2012 дата публикации

Transparent silicone epoxy composition

Номер: US20120172505A1

A transparent silicone epoxy composition is provided. The transparent silicone epoxy composition comprises (a) at least an epoxy modified siloxane, (b) at least a silanol-containing siloxane and (c) a catalyst. Each epoxy modified siloxane molecule comprises at least two cycloaliphatic epoxy groups and epoxy modified siloxane in the transparent silicone epoxy composition is about 10˜89 weight percentage. Silanol-containing siloxane can be cross-linked with epoxy modified siloxane. Silanol-containing siloxane comprises at least two hydroxyl groups. Silanol-containing siloxane in the transparent silicone epoxy composition is about 89˜10 weight percentage. The catalyst in the transparent silicone epoxy composition is about 0.01˜1 weight percentage.

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12-07-2012 дата публикации

Light emitting diodes and method for manufacturing the same

Номер: US20120175628A1
Принадлежит: Advanced Optoelectronic Technology Inc

An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer.

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12-07-2012 дата публикации

Glued light core for light-emitting diode

Номер: US20120175671A1
Автор: Han-Ming Lee
Принадлежит: Individual

The present invention relates to an improved glued light core for a light-emitting diode (LED), which provides an optical lamp body integrally formed on an upper end of an LED lead frame. In particular, the optical lamp body is designed as a glued structure with minimal epoxy, to simplify a complicated packaging operation in a conventional manufacturing process, to directly fasten a crystal cup, a crystal cell and a conductive gold wire to the upper end of the lead frame by the epoxy, and to provide illumination comparable to that of general light core. Additionally, a light-emitting housing is made of polychloroprene or plastic resin which is able to be applied or injected outside the glued light core, such that a light source inside the glued light core emits light beams through the light-emitting housing to form collection or stray lights of a special light source with multiple variations. Thus, the manufacturing process and multiple applications of the LED can be greatly simplified.

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12-07-2012 дата публикации

Flash lens and flash module employing the same

Номер: US20120176801A1
Автор: Jae-Sung You
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A flash lens and a flash module. The flash lens includes a circular first incidence surface on which light emitted from a light source in a center direction is incident; a second incidence surface arranged to be tilted with respect to an optical axis and on which light emitted from the light source in a lateral direction is incident; a reflective surface that reflects light incident from the second incidence surface; a bottom surface that connects the second incidence surface and the reflective surface; and a circular emission surface that emits light transmitted through the first incidence surface and light reflected by the reflective surface. The flash module includes an LED chip; and the flash lens of claim 1 that is arranged above the LED chip.

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12-07-2012 дата публикации

Solventless one liquid type cyanate ester-epoxy composite resin composition

Номер: US20120178853A1
Автор: Ryo Ogawa, Shinsuke Yamada
Принадлежит: Adeka Corp

The present invention is a solventless one liquid type cyanate ester-epoxy resin composition having high thermal resistance as well as excellent storage stability and curing properties, which contains (A) cyanate ester, (B) epoxy resin, (C) guanidine compounds and (D) at least one kind of phenol compounds selected from a group consisting of phenol compounds represented by the following general formulae. In the general formulae, 1 is an integer selected from 0 to 4, R 1 represents an unsubstituted or fluorine-substituted monovalent hydrocarbon group. General formula:

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19-07-2012 дата публикации

Led with remote phosphor layer and reflective submount

Номер: US20120181565A1
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.

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19-07-2012 дата публикации

Luminescent Ceramic Composite Converter and Method of Making the Same

Номер: US20120181919A1
Автор: George C. Wei
Принадлежит: Osram Sylvania Inc

A luminescent converter for a light emitting element (e.g., LED) includes a transparent, sol-gel-derived ceramic matrix having particles of at least one type of phosphor embedded therein that change a wavelength of the input light to light that has a different wavelength. The ceramic matrix is 20-80% porous with a majority of the pores having a diameter in a range of 2-20 nm. A method of making this converter includes preparing a sol-gel ceramic matrix embedded with the particles of phosphor in the matrix, and drying the matrix at no more than 600° C. to form the converter.

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26-07-2012 дата публикации

(halo)silicate-based phosphor and manufacturing method of the same

Номер: US20120187338A1

Disclosed are a (halo)silicate-based phosphor and a manufacturing method of the same. More particularly, the disclosed phosphor is a novel (halo)silicate-based phosphor manufactured by using a (halo)silicate-based host material containing an alkaline earth metal, and europium as an activator.

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26-07-2012 дата публикации

Laminating encapsulant film containing phosphor over leds

Номер: US20120187427A1
Автор: Haryanto Chandra
Принадлежит: Philips Lumileds Lighing Co LLC

A process is described for wavelength conversion of LED light using phosphors. LED dies are tested for correlated color temperature (CCT), and binned according to their color emission. The LEDs in each_bin are mounted on a single submount to form an array of LEDs. Various thin sheets of a flexible encapsulant (e.g., silicone) infused with one or more phosphors are preformed, where each sheet has different color conversion properties. An appropriate sheet is placed over an array of LED mounted on a submount, and the LEDs are energized. The resulting light is measured for CCT. If the CCT is acceptable, the phosphor sheet is permanently laminated onto the LEDs and submount. By selecting a different phosphor sheet for each bin of LEDs, the resulting CCT is very uniform across all bins.

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26-07-2012 дата публикации

Light emitting diode device and manufacturing method thereof

Номер: US20120187436A1
Принадлежит: Advanced Optoelectronic Technology Inc

A light emitting diode (LED) device includes a substrate, a supporting member, an electrode layer, an LED chip and an encapsulant. The substrate has a first surface and a second surface. The substrate defines a hole extending through the first surface and the second surface. The supporting member is attached to the second surface of the substrate and covers the hole. The supporting member and the substrate cooperatively define a cavity. The electrode layer is arranged on the first surface of the substrate and an inner surface of the cavity. The encapsulant is arranged on the electrode layer and covers the LED chip.

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02-08-2012 дата публикации

Radiation-Emitting Semiconductor Component

Номер: US20120193657A1
Принадлежит: OSRAM Opto Semiconductors GmbH

A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently designed conversion elements. During operation of the light-emitting diode chips each of the emission regions is provided for generating electromagnetic primary radiation. Each emission region has an emission surface by which at least part of the primary radiation is decoupled from the light-emitting diode chip. The conversion elements are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation. The differently designed conversion elements are disposed downstream of different emission surfaces. An electric resistance element is connected in series or parallel to at least one of the emission regions.

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02-08-2012 дата публикации

Structures and substrates for mounting optical elements and methods and devices for providing the same background

Номер: US20120193659A1
Принадлежит: Cree Inc

Methods are disclosed including generating a substrate surface topography that includes a mounting portion that is higher than a relief portion that defines a perimeter of the mounting portion.

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16-08-2012 дата публикации

Light emitting diode comprising semiconductor nanocrystal complexes

Номер: US20120205621A1
Автор: Kwang-Ohk Cheon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a nanocrystal complex layer. The nanocrystal complex layer is deposited on top of the stability layer. A thickness of the stability layer is chosen to maximizes a power of a light output by the nanocrystal complex layer. The matrix material and the stability layer can be of the same type of material. Additional layers of matrix material can be deposited on top of the nanocrystal complex layer. These additional layers can comprise matrix material only or can comprise matrix material and semiconductor nanocrystals to form another nanocrystal complex layer.

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16-08-2012 дата публикации

Light-Emitting Diode Package Device and Method for Making the Same

Номер: US20120205703A1
Автор: Po-Jen Su
Принадлежит: GENESIS PHOTONICS INC

A light-emitting diode package device includes: a base unit defining a packaging space; a light-emitting diode die that is disposed inside the packaging space to electrically connect to the base unit and that is capable of emitting light; and an encapsulant that is filled in the packaging space to encapsulate the light-emitting diode die and that includes an upper surface to be exposed to external environment, and a plurality of microstructures formed on the upper surface.

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23-08-2012 дата публикации

Lighting Device

Номер: US20120211775A1
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A lighting device having a novel structure for integration of a plurality of light-emitting elements, and a manufacturing method thereof are provided. In the lighting device, a plurality of light-emitting elements is electrically connected to each other through plugs (connecting members) and a connection wiring for integration. The connection wiring is provided on a counter substrate and the plugs are provided over an element substrate or for the counter substrate. Such a connection structure enables an appropriate electrical connection between the plurality of light-emitting elements in the lighting device.

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23-08-2012 дата публикации

Light emitting device

Номер: US20120211781A1
Принадлежит: Seoul Semiconductor Co Ltd

The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor.

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23-08-2012 дата публикации

Optical device for semiconductor based lamp

Номер: US20120211790A1
Автор: Keh Shium Liu
Принадлежит: Pinecone Energies Inc Taiwan

An optical device for a semiconductor based lamp includes a base and a semiconductor based light-emitting device mounted on the base. A transparent body encapsulates the semiconductor based light-emitting device. A reflective surface is in contact with the transparent body and covers a predetermined region on a top of the transparent body. The reflective surface has an opening. At least a portion of the transparent body protrudes through the opening in the reflective surface. Light emitted from the semiconductor based light-emitting device transmits upwardly through the opening in the reflective surface.

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30-08-2012 дата публикации

Light-emitting diode element and light-emitting diode device

Номер: US20120217527A1
Принадлежит: Nitto Denko Corp

A light-emitting diode element includes an optical semiconductor layer, an electrode unit to be connected to the optical semiconductor layer, and an encapsulating resin layer that encapsulates the optical semiconductor layer and the electrode unit, the encapsulating resin layer containing a light reflection component.

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06-09-2012 дата публикации

Phosphor and led light emitting device using the same

Номер: US20120223352A1
Принадлежит: Toshiba Corp, Toshiba Materials Co Ltd

An LED light emitting device is provided that has high color rendering properties and is excellent color uniformity and, at the same time, can realize even luminescence unattainable by conventional techniques. A phosphor having a composition represented by formula: (Sr 2-X-Y-Z-ω Ba X Mg Y Mn Z Eu ω )SiO 4 wherein x, y, z, and u are respectively coefficients satisfying 0.1<x<1, 0<y<0.5, 0<z<0.1, y>z, and 0.01<ω<0.2. is provided. The phosphor is used in combination with ultraviolet and blue light emitting diodes having a luminescence peak wavelength of 360 to 470 nm to form an LED light emitting device.

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06-09-2012 дата публикации

Silicate phosphor, method of manufacturing silicate phosphor, and light-generating device having silicate phosphor

Номер: US20120223636A1

A silicate phosphor composition is provided having a γ-phase of an orthorhombic crystal structure whose space group is Pbnm 62, and whose composition is represented by the following chemical formula: Ca 2-x-y-z M x SiO 4 :y Ce 3+ ,z N(0≦ x <0.5,0< y ≦0.1,0≦ z <0.15) In the formula, M represents at least one member selected from the group consisting of Mg, Sr, Ba, Zn, Na, Al, Ga, Ge, P, As and Fe, and N represents at least one member selected from the group consisting of Eu 2+ , Mn 2+ , Tb 3+ , Yb 2+ and Tm 3+ . The silicate phosphor has a maximum absorbance for a wavelength of about 450 nm to about 475 nm corresponding to a main part of a blue excitation light, and has a great stability at a high temperature. As such the silicate phosphor may be used in combination with a blue light source to produce a white light.

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06-09-2012 дата публикации

Monolithic full-color led micro-display on an active matrix panel manufactured using flip-chip technology

Номер: US20120223875A1
Автор: Kei May Lau, Zhaojun Liu

A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using PMOS process, NMOS process, or CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the PMOS/NMOS/CMOS process can be eliminated.

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06-09-2012 дата публикации

Tunable remote phosphor constructs

Номер: US20120224363A1
Автор: Antony P. Van de Ven
Принадлежит: Individual

A solid state lighting comprising: at least one LED element positioned on a top surface of a substrate or a submount; and a polygonal structure comprising a plurality of edges forming a plurality of facets configured to receive light from the at least one LED element, the polygonal structure comprising a wavelength converting material, wherein the wavelength converting material is remotely positioned from the at least one LED element.

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20-09-2012 дата публикации

Semiconductor light-emitting device and manufacturing method

Номер: US20120235169A1
Принадлежит: Stanley Electric Co Ltd

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer. A wavelength-converted light that is emitted can have a high light-emitting efficiency and a high contrast between a light-emitting and non-light-emitting surface from a small light-emitting surface.

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20-09-2012 дата публикации

Power surface mount light emitting die package

Номер: US20120235199A1
Принадлежит: Individual

A light emitting die package is provided which includes a metal substrate having a first surface and a first conductive lead on the first surface. The first conductive lead is insulated from the substrate by an insulating film. The first conductive lead forms a mounting pad for mounting a light emitting device. The package includes a metal lead electrically connected to the first conductive lead and extending away from the first surface.

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27-09-2012 дата публикации

Optical illumination device

Номер: US20120241777A1
Принадлежит: LUXINTEC SL

The present invention relates to an optical lighting device comprising at least one light emitting diode configured for emitting said light with a trajectory, the device being capable of modifying said trajectory since it comprises an optical element comprising two faces each having a plurality of preferably rectangular lenses, each lens of one face being aligned with a lens of the other face.

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27-09-2012 дата публикации

Methods of fabricating light emitting diode devices

Номер: US20120244652A1

An embodiment of the disclosure includes a method of fabricating a plurality of light emitting diode devices. A plurality of LED dies is provided. The LED dies are bonded to a carrier substrate. A patterned mask layer comprising a plurality of openings is formed on the carrier substrate. Each one of the plurality of LED dies is exposed through one of the plurality of the openings respectively. Each of the plurality of openings is filled with a phosphor. The phosphor is cured. The phosphor and the patterned mask layer are polished to thin the phosphor covering each of the plurality of LED dies. The patterned mask layer is removed after polishing the phosphor.

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04-10-2012 дата публикации

Light emitting diode device and producing method thereof

Номер: US20120248484A1
Принадлежит: Nitto Denko Corp

A method for producing a light emitting diode device includes the steps of preparing a base board; allowing a light semiconductor layer where an electrode portion is provided at one side in a thickness direction to be disposed in opposed relation to the base board, and the electrode portion to be electrically connected to a terminal, so that the light semiconductor layer is flip-chip mounted on the base board; forming an encapsulating resin layer containing a light reflecting component at the other side of the base board so as to cover the light semiconductor layer and the electrode portion; removing the other side portion of the encapsulating resin layer so as to expose the light semiconductor layer; and forming a phosphor layer formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer.

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11-10-2012 дата публикации

Led package structure for increasing the light uniforming effect

Номер: US20120256198A1
Принадлежит: Lustrous Tech Ltd

A LED package structure for increasing the light uniforming effect includes a substrate unit, a light emitting unit, a first package unit, and a second package unit. The substrate unit includes at least one substrate body. The light emitting unit includes at least one light emitting element disposed on the at least one substrate body and electrically connected to the at least one substrate body. The first package unit includes a first package resin body formed on the at least one substrate body to cover the at least one light emitting element. The second package unit includes a second package resin body formed on the at least one substrate body to cover the first package resin body. The second package resin body is a light uniforming resin body having a light diffusing material mixed therein, and the second package resin body has an exposed light uniforming surface formed thereon.

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11-10-2012 дата публикации

Light-emitting diode package

Номер: US20120256217A1
Принадлежит: Himax Display Inc, Himax Technologies Ltd

A light-emitting diode (LED) package including a substrate, an LED chip, a polarizer, and a supporter is provided. The LED chip is disposed on the substrate. The polarizer is disposed above the LED chip. The supporter is disposed on the substrate for supporting the polarizer.

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11-10-2012 дата публикации

Light emitting device module and surface light source device

Номер: US20120256560A1
Автор: Sang Bok Yun
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light emitting device package includes a package body; a first light emitting device mounted on the package body and emitting light of a particular color; a second light emitting device mounted on the package body to be adjacent to the first light emitting device, adjusting an amount of light according to a current value applied thereto to thereby control a color temperature, and emitting orange light; and a resin part sealing the first and second light emitting devices and containing at least one or more types of phosphors.

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18-10-2012 дата публикации

Led wavelength-converting structure including a thin film structure

Номер: US20120261688A1
Принадлежит: Osram Sylvania Inc

A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.

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18-10-2012 дата публикации

Phosphor reflecting sheet, light emitting diode device, and producing method thereof

Номер: US20120261700A1
Принадлежит: Nitto Denko Corp

A phosphor reflecting sheet provides a phosphor layer on one side in a thickness direction of a light emitting diode element and provides a reflecting resin layer at the side of the light emitting diode element. The phosphor reflecting sheet includes the phosphor layer and the reflecting resin layer provided on one surface in the thickness direction of the phosphor layer. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be disposed in opposed relation to the side surface of the light emitting diode element.

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18-10-2012 дата публикации

Method and system for template assisted wafer bonding

Номер: US20120264256A1
Принадлежит: Skorpios Technologies Inc

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

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25-10-2012 дата публикации

Light-emitting diode die packages and illumination apparatuses using same

Номер: US20120267675A1
Автор: Yu-Nung Shen
Принадлежит: Evergrand Holdings Ltd

The present invention relates to an LED die package, which has a light-emitting diode die having a sapphire layer, a first doped layer doped with a p- or n-type dopant, and a second doped layer doped with a different dopant from that doped in the first doped layer. A surface of the sapphire layer opposite to the surface on which the first doped layer is disposed is formed with generally inverted-pyramidal-shaped recesses and overlaid with a phosphor powder layer. Each of the first and the second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is disposed and formed with exposure holes for exposing the electrodes. The exposure holes are each filled with an electrically conductive linker.

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25-10-2012 дата публикации

Light-emitting device, white light-emitting device, illuminator, and image display

Номер: US20120267997A1
Принадлежит: Mitsubishi Chemical Corp

To achieve a light-emitting device emitting light with high brightness, closer to natural light, and less color shift due to a small change in intensity of emitted light, in a light-emitting device including a light source emitting light by driving current and at least one wavelength-converting material absorbing at least part of the light from the light source and emitting light having a different wavelength, the color coordinate x 1 (17.5) and the color coordinate y 1 (17.5) of the light emitted at a driving current density of 17.5 A/cm 2 and the color coordinate x 1 (70) and the color coordinate y 1 (70) of the light emitted at a driving current density of 70 A/cm 2 satisfy the following Expressions (D) and (E): −0.006≦ x 1 (17.5)− x 1 (70)≦0.006  (D), −0.006≦ y 1 (17.5)− y 1 (70)≦0.006  (E).

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25-10-2012 дата публикации

Solid State Bidirectional Light Sheet for General Illumination

Номер: US20120268931A1
Принадлежит: QUARKSTAR LLC

A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate having conductors is then laminated over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. The light sheets may be formed to emit light from opposite surfaces of the light sheet, enabling it to be used in a hanging fixture to illuminate the ceiling as well as the floor. The light sheet provides a practical substitute for a standard 2×4 foot fluorescent ceiling fixture.

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01-11-2012 дата публикации

Light emitting device and illumination apparatus including same

Номер: US20120274203A1
Автор: Ryoji Yokotani
Принадлежит: Panasonic Corp

A light emitting device includes a solid-state light emitting element; and a wavelength converting member made of a transparent resin containing a fluorescent material, the transparent resin being coated on an output surface of the solid-state light emitting element. The wavelength converting member is formed to have a thickness larger in a vertical direction of the solid-state light emitting element than that in a lateral direction of the solid-state light emitting element in a cross section that is parallel to a light output direction of the solid-state light emitting element and have a zenith in the light output direction.

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