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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 326. Отображено 100.
20-08-2002 дата публикации

УСТРОЙСТВО ДЛЯ ПРЕОБРАЗОВАНИЯ ТЕПЛОВОЙ ЭНЕРГИИ В МЕХАНИЧЕСКУЮ

Номер: RU0000024754U1

Устройство для преобразования тепловой энергии в механическую, состоящее из корпуса, содержащего область нагрева, с расположенным в ней постоянным магнитом, и область охлаждения, ротор, выполненный из отдельных ферромагнитных пластин, отличающееся тем, что пластины выполнены из никеля. (19) RU (11) 24 754 (13) U1 (51) МПК H01L 37/04 (2000.01) РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К СВИДЕТЕЛЬСТВУ (21), (22) Заявка: 2002106083/20 , 18.03.2002 (24) Дата начала отсчета срока действия патента: 18.03.2002 (46) Опубликовано: 20.08.2002 (57) Формула полезной модели Устройство для преобразования тепловой энергии в механическую, состоящее из корпуса, содержащего область нагрева, с расположенным в ней постоянным магнитом, и область охлаждения, ротор, выполненный из отдельных ферромагнитных пластин, отличающееся тем, что пластины выполнены из никеля. R U 2 4 7 5 4 (54) УСТРОЙСТВО ДЛЯ ПРЕОБРАЗОВАНИЯ ТЕПЛОВОЙ ЭНЕРГИИ В МЕХАНИЧЕСКУЮ Ñòðàíèöà: 1 U 1 U 1 (73) Патентообладатель(и): Государственное образовательное учреждение высшего профессионального образования Тюменский государственный нефтегазовый университет 2 4 7 5 4 (72) Автор(ы): Самойлова М.И., Перевозкин А.Ю., Чарков С.Т., Квашнин Г.Р., Квашнина Л.Г., Яркин А.В. R U Адрес для переписки: 625000, г. Тюмень, ул. Володарского, 38, ТюмГНГУ, патентно-информационный отдел (71) Заявитель(и): Государственное образовательное учреждение высшего профессионального образования Тюменский государственный нефтегазовый университет U 1 U 1 2 4 7 5 4 2 4 7 5 4 R U R U Ñòðàíèöà: 2 RU 24 754 U1 RU 24 754 U1 RU 24 754 U1 RU 24 754 U1 RU 24 754 U1

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10-09-2004 дата публикации

УСТРОЙСТВО ДЛЯ ФОРМИРОВАНИЯ НАНОСТРУКТУР

Номер: RU0000040537U1

Устройство для формирования наноструктур, содержащее неподвижное основание, установленный на нем пъезопривод с зондом, подложку, закрепленную на подложкодержателе с возможностью электрического взаимодействия с зондом и технологическими материалами, отличающееся тем, что подложка выполнена из материала, являющего несмачиваемым по отношению к технологическим материалам, необходимым для формирования наноструктуры, устройство снабжено ионным источником. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 40 537 (13) U1 (51) МПК H01L 37/02 (2000.01) B82B 3/00 (2000.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2004107373/22 , 16.03.2004 (24) Дата начала отсчета срока действия патента: 16.03.2004 (46) Опубликовано: 10.09.2004 4 0 5 3 7 R U Формула полезной модели Устройство для формирования наноструктур, содержащее неподвижное основание, установленный на нем пъезопривод с зондом, подложку, закрепленную на подложкодержателе с возможностью электрического взаимодействия с зондом и технологическими материалами, отличающееся тем, что подложка выполнена из материала, являющего несмачиваемым по отношению к технологическим материалам, необходимым для формирования наноструктуры, устройство снабжено ионным источником. Ñòðàíèöà: 1 U 1 U 1 (54) УСТРОЙСТВО ДЛЯ ФОРМИРОВАНИЯ НАНОСТРУКТУР 4 0 5 3 7 (73) Патентообладатель(и): Государственное образовательное учреждение высшего профессионального образования Московский государственный институт электроники и математики (технический университет) (RU) R U Адрес для переписки: 109028, Москва, Б. Трехсвятительский пер., 3/12, МГИЭМ, отдел охраны интеллектуальной собственности, пат.пов. Т.В. Григорьевой, рег.№ 34 (72) Автор(ы): Ивашов Е.Н. (RU), Пискарев Д.А. (RU) , Павлов А.Ю. (RU) , Степанов М.В. (RU) U 1 U 1 4 0 5 3 7 4 0 5 3 7 R U R U Ñòðàíèöà: 2 RU 5 10 15 20 25 30 35 40 45 50 40 537 U1 Полезная модель относится к области машиностроения, а конкретно к устройствам ...

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10-01-2009 дата публикации

АВТОНОМНЫЙ ТЕРМОЭЛЕКТРИЧЕСКИЙ ВОЗДУХООХЛАДИТЕЛЬНЫЙ АГРЕГАТ

Номер: RU0000079649U1

Автономный термоэлектрический воздухоохладительный агрегат, содержащий размещенные в нем посредством системы крепления наборы термоэлектрических модулей, каждый из которых установлен между горячей и холодной теплообменными пластинами, контактирующими соответственно с горячим и холодным радиаторами из гофрированной ленты с плоскими вершинами, поверх которых установлены прижимные пластины, а также вентиляторы горячей и холодной сторон, отличающийся тем, что он снабжен монтажным коробчатым основанием со сквозным вырезом и установленными на нем с размещением в упомянутом вырезе модульными секциями блока охлаждения с формирователями потоков горячего и холодного воздуха, а также введены горячий и холодный кожухи, установленные оппозитно друг другу на монтажном основании по обе стороны с возможностью образования с одной стоны упомянутого основания горячего воздуховода, а с другой стороны - холодного воздуховода, при этом каждая модульная секция блока охлаждения включает элемент системы крепления, выполненной в виде замкового блока прижима упомянутых радиаторов к теплообменным пластинам, состоящий из симметрично размещенных поверх радиаторов U-образно изогнутых скоб, например двух, каждая из которых на разомкнутых концах снабжена защелками, под которыми установлена замыкающая пластинчатая пружина с дугообразно изогнутой поверхностью, в центре выпуклой части которой выполнен контактирующий с прижимной пластиной выпуклый центрирующий элемент, а на приподнятых краях замыкающей пружины выполнены замковые вырезы с зацепами, контактирующими с защелками скоб, причем на монтажное коробчатое основание устанавливают модульные секции блока охлаждения в количестве, равном любому целому числу, а каждый из формирователей потоков горячего и холодного воздуха выполнен в виде крышки с отверстиями для установки вентиляторов и установлен на монтажном основании параллельно соответствующей модульной секции в горячем и холодном воздуховодах, в каждом из которых в соответствующем формирователе ...

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27-02-2011 дата публикации

НАНОТЕХНОЛОГИЧЕСКОЕ УСТРОЙСТВО ДЛЯ ВЫПОЛНЕНИЯ ОПЕРАЦИЙ

Номер: RU0000102430U1

1. Нанотехнологическое устройство для выполнения операций, содержащее неподвижную платформу, закрепленный на ней пьезосканер, на котором установлен источник излучения, подложкодержатель с установленной на нем подложкой, отличающееся тем, что на торце пьезосканера установлен источник рентгеновского излучения с фокусирующими линзами, выполненными в виде фокусирующих элементов - углеродных нанотрубок и фуллеренов, размещенных в свинцовой матрице, причем углеродные нанотрубки размещены в каналах свинцовой матрицы в количестве не менее десяти углеродных нанотрубок в одном канале, а фуллерены расположены внутри углеродных нанотрубок в количестве не менее 10 в одной углеродной нанотрубке. 2. Нанотехнологическое устройство для выполнения операций по п.1, отличающееся тем, что свинцовая матрица выполнена с диаметром d каждого канала, равным 1,5÷2 нм, длиной L каждого канала, равной 7,5÷8 мкм, и расстоянием D между каналами по осям не менее двух диаметров канала. 3. Нанотехнологическое устройство для выполнения операций по п.1, отличающееся тем, что каждая углеродная трубка имеет длину 750÷800 нм. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 102 430 (13) U1 (51) МПК H01L 37/02 (2006.01) B82B 1/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21)(22) Заявка: 2010119552/07, 17.05.2010 (24) Дата начала отсчета срока действия патента: 17.05.2010 (45) Опубликовано: 27.02.2011 1 0 2 4 3 0 R U Формула полезной модели 1. Нанотехнологическое устройство для выполнения операций, содержащее неподвижную платформу, закрепленный на ней пьезосканер, на котором установлен источник излучения, подложкодержатель с установленной на нем подложкой, отличающееся тем, что на торце пьезосканера установлен источник рентгеновского излучения с фокусирующими линзами, выполненными в виде фокусирующих элементов - углеродных нанотрубок и фуллеренов, размещенных в свинцовой матрице, причем углеродные нанотрубки размещены в каналах ...

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03-08-2018 дата публикации

Стенд для исследования термогенераторных модулей

Номер: RU0000182100U1

Устройство может быть использовано в качестве лабораторного оборудования в научных исследованиях и учебном процессе для снятия характеристик термогенераторных модулей и термоэлектрических генераторов и относится к области электротехники, а именно к стендам для исследования термогенераторных модулей. Устройство содержит источник тепловой энергии, термоэлектрический генераторный модуль, нагрузочное устройство, вольтметр, амперметр, при этом термоэлектрический генераторный модуль расположен между теплоприемником, оснащенным датчиком высоких температур, нагреваемым посредством регулировки величины факела пламени редуктором с манометром, и радиатором, оснащенным датчиком низких температур, охлаждаемым посредством вентилятора, притом оба датчика подключены к измерителю-регулятору технологическому, а величины термоЭДС и тока отслеживается по вольтметру и амперметру соответственно, соединяемым посредством щита управления с аккумулятором и переменным реостатом, а посредством проводов - с термогенераторным модулем. Технический результат заключается в повышении эффективности работы стенда, а также в расширении функциональных возможностей стенда. 1 ил. 182100 Ц ко РОССИЙСКАЯ ФЕДЕРАЦИЯ ВУ” 182 100” 94 ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ИЗВЕЩЕНИЯ К ПАТЕНТУ НА ПОЛЕЗНУЮ МОДЕЛЬ ММ9К Досрочное прекращение действия патента из-за неуплаты в установленный срок пошлины за поддержание патента в силе Дата прекращения действия патента: 22.08.2018 Дата внесения записи в Государственный реестр: 05.11.2019 Дата публикации и номер бюллетеня: 05.11.2019 Бюл. №31 Стр.: 1 ООС па ЕП

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18-08-2020 дата публикации

Термоэлектрический генератор

Номер: RU0000199132U1

Полезная модель относится к области термовольтаического преобразования тепловой энергии с использованием полупроводниковых пленочных структур. Термоэлектрический генератор содержит поликристаллический слой полупроводникового материала на основе сульфида самария, с монотонно изменяющимся содержанием самария в направлении, перпендикулярном поверхности слоя и токовые контакты, N (N>2) условно одинаковых слоев поликристаллического сульфида самария с градиентом концентрации самария в направлении, перпендикулярном плоскости токосъемных электродов, причем слои поликристаллического сульфида самария с градиентом концентрации самария сформированы в единый термовольтаический преобразователь таким образом, что та сторона, которая имеет меньшую концентрацию самария, соединяется через напыляемый токовый контакт со стороной слоя сульфида самария с большей концентрацией самария. Технический результат: создание устройства преобразующего тепловую энергию в электрическую, при этом не требующего градиента температуры для генерации термоЭДС и обладающего сравнительно высокими значениями вырабатываемой термоЭДС. 1 з.п. ф-лы, 2 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 199 132 U1 (51) МПК H01L 37/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 37/00 (2020.05) (21)(22) Заявка: 2020113529, 15.04.2020 (24) Дата начала отсчета срока действия патента: Дата регистрации: Адрес для переписки: 664074, Иркутская обл., г. Иркутск, ул. Лермонтова, 83, Иркутский национальный исследовательский технический университет (56) Список документов, цитированных в отчете о поиске: RU 2303834 C2, 27.07.2007. RU 2548062 C2, 10.04.2015. RU 2378742 C1, 10.01.2010. WO 2008155406 A3, 24.12.2008. 1 9 9 1 3 2 R U (54) Термоэлектрический генератор (57) Реферат: Полезная модель относится к области термовольтаического преобразования тепловой энергии с использованием полупроводниковых пленочных структур. Термоэлектрический генератор содержит ...

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28-03-2013 дата публикации

Electrocaloric Refrigerator and Multilayer Pyroelectric Energy Generator

Номер: US20130074900A1
Принадлежит: STC.UNM

In accordance with the invention, there are electrocaloric devices, pyroelectric devices and methods of forming them. A device which can be a pyroelectric energy generator or an electrocaloric cooling device, can include a first reservoir at a first temperature and a second reservoir at a second temperature, wherein the second temperature is higher than the first temperature. The device can also include a plurality of liquid crystal thermal switches disposed between the first reservoir and the second reservoir and one or more active layers disposed between the first reservoir and the second reservoir, such that each of the one or more active layers is sandwiched between two liquid crystal thermal switches. The device can further include one or more power supplies to apply voltage to the plurality of liquid crystal thermal switches and the one or more the active layers. 1. An electrocaloric cooling device , comprising:a plurality of electrocaloric layers configured to be disposed between a first reservoir at a first temperature and a second reservoir at a second temperature, wherein the second temperature is higher than the first temperature;a plurality of thermal switches, wherein the plurality of electrocaloric layers are separated from each other by one or more of the plurality of thermal switches; anda power source configured to supply power to the plurality of electrocaloric layers and the plurality of thermal switches, such that each of the plurality of electrocaloric layers is configured to perform a thermodynamic cycle so as to transfer heat from the first reservoir.2. The device of claim 1 , wherein the plurality of electrocaloric layers are thin film layers claim 1 , each having a thickness of between about 0.01 μM and about 5 μm.3. The device of claim 1 , wherein plurality of thermal switches are anisotropically thermally conductive.4. The device of claim 3 , wherein each of the plurality of thermal switches has a ratio of thermal conductivity between two ...

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16-05-2013 дата публикации

Thermal Airlflow Sensor

Номер: US20130119504A1
Принадлежит: Hitachi Automotive Systems, Ltd.

An object of the present invention is to provide a thermal airflow sensor that prevents moisture absorption by a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), and that reduces a measuring error. In order to attain the foregoing object, the thermal airflow sensor according to the present invention applies an ion implantation to a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), by using an atom or molecule selected from at least any one of silicon, oxygen, and an inert element such as argon or nitrogen, in order to increase a concentration of an atom contained in the silicon oxide film more than that before the ion implantation. 1. A thermal airflow sensor comprising: a semiconductor substrate; an electric insulator formed on the semiconductor substrate and including a resistance heating element , a resistance temperature detector , and a silicon oxide film; and a diaphragm formed by removing a part of the semiconductor substrate , the resistance heating element and the resistance temperature detector being formed on the diaphragm , and the silicon oxide film formed as the electric insulator being formed on the resistance heating element and the resistance temperature detector , whereinan ion implantation is applied to the silicon oxide film located on the uppermost layer in order to increase a concentration of an atom, contained in the silicon oxide film on at least a region covering the diaphragm, more than that of the silicon oxide film before the ion implantation.2. The thermal airflow sensor according to claim 1 , wherein an ion implantation layer is formed on at least a certain region on the surface of the silicon oxide film in the thickness direction.3. The thermal airflow sensor according to claim 2 , comprising: a thermal oxide film formed on the semiconductor substrate by thermally oxidizing silicon; the resistance heating element and the resistance temperature ...

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30-05-2013 дата публикации

AMORPHOUS SILICON SENSOR FOR SLIDER

Номер: US20130135975A1
Принадлежит: SEAGATE TECHNOLOGY LLC

An apparatus includes a slider including an air bearing surface and a waveguide configured to receive light from a light source, a sensor positioned to receive a portion of light emitted by the light source prior to the light exiting the slider at the air bearing surface, and a controller controlling the light source power in response to a characteristic of the sensor. 1. An apparatus comprising:a slider;a sensor disposed within the slider and configured from amorphous silicon.2. The apparatus as claimed in wherein the slider comprises a recording head.3. The apparatus as claimed in wherein the sensor is a photosensor.4. The apparatus as claimed in wherein the sensor is in juxtaposition with a waveguide.5. The apparatus as claimed in wherein the slider comprises a laser.6. The apparatus as claimed in wherein the slider is configured to perform heat assisted magnetic recording.7. The apparatus as claimed in wherein the photosensor comprises a resistivity that changes in response to light.8. The apparatus as claimed in wherein the photosensor is configured to produce a voltage in response to light.9. The apparatus as claimed in wherein the sensor is a solar cell.10. The apparatus as claimed in wherein the sensor is configured to monitor a characteristic of the laser.11. A method comprising:fabricating a slider with a sensor disposed within the slider configured from amorphous silicon.12. The method as claimed in and further comprising:forming a recording head in the slider.13. The method as claimed in and further comprising:fabricating the sensor as a photosensor.14. The method as claimed in and further comprising:fabricating the sensor so as to be in juxtaposition with a waveguide.15. The method as claimed in and further comprising:fabricating a laser in the slider.16. The method as claimed in and further comprising:fabricating the slider to be capable of performing heat assisted magnetic recording.17. The method as claimed in and further comprising:fabricating the ...

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13-06-2013 дата публикации

SYSTEM-IN-PACKAGE PLATFORM FOR ELECTRONIC-MICROFLUIDIC DEVICES

Номер: US20130149215A1
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS N.V.

The present invention relates to an integrated electronic-microfluidic device an integrated electronic-microfluidic device, comprising a semiconductor substrate () on a first () support, an electronic circuit () on a first semiconductor-substrate side of the semiconductor substrate, and a signal interface structure to an external device. The signal interface structure is arranged on the first semiconductor-substrate side and configured to receive electrical signals from the electronic circuit. A microfluidic structure () is formed in the semiconductor substrate, and is configured to confine a fluid and to allow a flow of the fluid to and from the microfluidic structure only on a second semiconductor-substrate side that is opposite to the first semiconductor-substrate side and faces away form the first support. The electronic-microfluidic device forms a flexible platform for the formation of various System-in-Package applications. It achieves a clear separation between electrical and wet-chemical interfaces. The claimed method for fabricating the device of the invention also allows a simple formation of thermally isolated microfluidic structures. 1. An assembly comprising an integrated electronic-microfluidic device that is mounted on a circuit board ,the integrated electronic-microfluidic device comprising:a semiconductor substrate on a first support;an electronic circuit on a first semiconductor-substrate side of the semiconductor substrate;a signal interface structure to an external device, the signal interface structure being arranged on the first semiconductor-substrate side and configured to receive electrical signals from the electronic circuit;a microfluidic structure formed in the semiconductor substrate, the microfluidic structure being configured to confine a fluid and to allow a flow of the fluid to and from the microfluidic structure only on a second semiconductor-substrate side that is opposite to the first semiconductor-substrate side and faces away ...

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18-07-2013 дата публикации

TUNNEL-EFFECT POWER CONVERTER

Номер: US20130180562A1
Принадлежит:

A tunnel-effect power converter including first and second electrodes having opposite surfaces, wherein the first electrode includes protrusions extending towards the second electrode. 1. A tunnel-effect power converter comprising first and second electrodes having opposite surfaces , wherein:the first electrode comprises protrusions extending towards the second electrode;the second electrode comprises protrusions extending towards the protrusions of the first electrode; andthe protrusions of the second electrode face the protrusions of the first electrode.2. The converter of claim 1 , comprising at least one third electrode claim 1 , the second and third electrodes having opposite surfaces.3. The converter of claim 2 , wherein the second electrode comprises protrusions extending towards the third electrode.4. The converter of claim 3 , wherein the third electrode comprises protrusions extending towards the protrusions of the second electrode.5. The converter of claim 1 , wherein said protrusions are point-shaped.6. The converter of claim 5 , wherein the points have a height ranging between 5 and 25 nm.7. The converter of claim 1 , wherein the minimum distance separating said opposite surfaces ranges between 1 and 30 nm.8. The converter of claim 1 , wherein said electrodes comprise silicon.9. The converter of claim 1 , wherein said surfaces are coated with a material from the group comprising cesium claim 1 , cesium oxides claim 1 , and potassium peroxide.10. A method for manufacturing the tunnel-effect power converter of claim comprising:forming resin or oxide islands masking regions of a single-crystal silicon layer;partially thinning the single-crystal silicon layer by means of a solution preferentially etching oblique crystal planes of said layer. This application claims the priority benefit of French patent application number 12/50497, filed on Jan. 18, 2012, which is hereby incorporated by reference to the maximum extent allowable by law.1. Technical FieldThe ...

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05-09-2013 дата публикации

POWER SEMICONDUCTOR MODULE WITH METHOD FOR MANUFACTURING A SINTERED POWER SEMICONDUCTOR MODULE

Номер: US20130228890A1
Автор: Eisele Ronald
Принадлежит:

Method of manufacturing sinterable electrical components for jointly sintering with active components, the components in planar shape being provided with at least one planar lower face meant for sintering, and an electrical contact area on the face opposite to the sintering face being available in the form of a metallic contact face, whose upper side is contactable by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting, the component being a temperature sensor, whose lower face is provided with a sinterable metallisation on a ceramic body, said ceramic body having two electrical contact faces for continued electrical connection. 1. A method of manufacturing a sintered power semiconductor module with a sinterable temperature sensor , with the steps:making the temperature sensor in a planar shape with at least one planar lower face meant for sintering, andmaking an electrical contact area on the face opposite to the sintering face, said contact area being contactable on the top side by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting or ultrasonic welding,whereinon the lower face of the temperature sensor a sinterable metallisation is applied on a ceramic body, conductor paths of Pt or Ni being formed in the middle of the ceramic body and two top side contact faces being formed laterally on the ceramic body as electrical contact areas.2. A method of manufacturing a sintered power semiconductor module with a sinterable temperature sensor , with the steps:making the temperature sensor in a planar shape with at least one planar lower face meant for sintering, andmaking an electrical contact area on the face opposite to the sintering face, said contact area being contactable on the top side by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting or ultrasonic welding,whereinon its lower face the ...

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03-10-2013 дата публикации

METHOD FOR MANUFACTURING DETECTING ELEMENT, METHOD FOR MANUFACTURING IMAGING DEVICE, DETECTING ELEMENT, IMAGING DEVICE, AND ELECTRONIC DEVICE

Номер: US20130256823A1
Автор: KUROKAWA Kenichi
Принадлежит: Seiko Epson Corporatiion

A detecting element has an absorbing section where a temperature rises according to an amount of electromagnetic waves which are absorbed and a detecting section where characteristics change according to an amount of heat which is transmitted from the absorbing section. A method for manufacturing the detecting element includes: forming the detecting section on a substrate; forming a protective film which covers the detecting section; forming a hollow space portion in a region which overlaps with the detecting section of the substrate in a planar view after the forming of the protective film; and forming the absorbing section by applying a liquid body, which contains a material constituting the absorbing section, in a region on the protective film on an opposite side from the detection section, which overlaps with the detecting section in a planar view, and solidifying the liquid body after the forming of the hollow space portion. 1. A method for manufacturing a detecting element , which has an absorbing section where a temperature rises according to an amount of electromagnetic waves which are absorbed and a detecting section where characteristics change according to an amount of heat which is transmitted from the absorbing section , the method comprising:forming the detecting section on a substrate;forming a protective film which covers the detecting section;forming a hollow space portion in a region which overlaps with the detecting section of the substrate in a planar view after the forming of the protective film; andforming the absorbing section by applying a liquid body, which contains a material constituting the absorbing section, in a region on the protective film on an opposite side from the detection section, which overlaps with the detecting section in a planar view, and solidifying the liquid body after the forming of the hollow space portion.2. The method for manufacturing the detecting element according to claim 1 , whereinthe forming of the absorbing ...

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03-10-2013 дата публикации

INTEGRATED CIRCUIT COMPRISING A GAS SENSOR

Номер: US20130256825A1
Принадлежит: NXP B.V.

An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element. 1. An integrated circuit comprising:a semiconductor substrate having a major surface;a metallization stack on the major surface;a trench in the metallization stack; anda thermal conductivity based gas sensor having, an electrically resistive sensor element located in the trench for exposure to a gas to be sensed;wherein the trench forms a barrier located for inhibiting a flow of the gas across the sensor element.2. (canceled)3. The integrated circuit of claim 1 , wherein the sensor element is formed in a metal level or via level of the metallization stack.4. The integrated circuit of claim 3 , wherein the sensor element is formed in a lower level of the metallization stack.5. The integrated circuit of any of claim 3 , wherein the gas sensor further comprises a heater element claim 3 , for heating the gas to be sensed claim 3 , and wherein the heater element is located in the trench with the sensor element.6. (canceled)7. An integrated circuit comprising:a semiconductor substrate having a major surface;a metallization stack on the major surface;a trench in the metallization stack; anda thermal conductivity based gas sensor having an electrically resistive sensor element located in the trench for exposure to a gas to be sensed;wherein the trench forms a barrier located for inhibiting a flow of the gas across the sensor element; and a patterned layer is located on the metallization stack, and wherein the trench and the patterned layer together form the barrier;wherein the sensor element is formed in a metal ...

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07-11-2013 дата публикации

Optically Transitioning Thermal Detector Structures

Номер: US20130292789A1
Автор: Beratan Howard
Принадлежит:

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature. 1. A thermal detector element comprising an optically transitioning thermal absorption structure , the thermal detector element being configured to sense radiation falling incident thereon by measuring at least one property of the thermal absorption structure that changes value with temperature , the thermal absorption structure being provided with one or more components that comprise at least one optically transitioning material.2. The thermal detector element of claim 1 , further comprising a substrate; and where the thermal absorption structure comprises a microbolometer pixel membrane structure configured to absorb radiation incident thereon claim 1 , the microbolometer pixel membrane structure being disposed in spaced relationship above the substrate to define a cavity therebetween.3. The thermal detector element of claim 2 , where the microbolometer pixel membrane structure comprises an electrically conductive thermally-electrically active layer and a radiation absorbing layer separate from the electrically conductive thermally-electrically active layer; where the substrate of the thermal detector element further comprises read out integrated circuitry (ROIC) electrically coupled to form a current path across at least a portion of the electrically conductive thermally-electrically active layer; and where the radiation absorbing layer comprises optically transitioning material.4. The thermal detector element of claim 3 , where the electrically conductive thermally-electrically active layer is disposed in a position between the optically transitioning radiation absorbing layer and the substrate.5. ...

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28-11-2013 дата публикации

THERMOELECTRIC CONVERTER ELEMENT, METHOD OF MANUFACTURING THERMOELECTRIC CONVERTER ELEMENT, AND THERMOELECTRIC CONVERSION METHOD

Номер: US20130312802A1
Принадлежит:

An object of the present invention is to provide a low-cost thermoelectric converter element having high productivity and excellent conversion efficiency. A thermoelectric converter element according to the present invention includes a substrate a magnetic film provided on the substrate with a certain magnetization direction A and formed of a polycrystalline magnetically insulating material, and an electrode provided on the magnetic film with a material exhibiting a spin-orbit interaction. When a temperature gradient is applied to the magnetic film a spin current is generated so as to flow from the magnetic film toward the electrode A current I is generated in a direction perpendicular to the magnetization direction A of the magnetic film by the inverse spin Hall effect in the electrode 1. A thermoelectric converter element comprising:a substrate;a magnetic film provided on the substrate with a certain magnetization direction and formed of a polycrystalline magnetically insulating material; andan electrode provided on the magnetic film with a material exhibiting a spin-orbit interaction.2. The thermoelectric converter element as recited in claim 1 , being configured so that claim 1 , when a temperature gradient is applied to the magnetic film claim 1 , a spin current is generated so as to flow from the magnetic film toward the electrode claim 1 , and a current is generated in a direction perpendicular to the magnetization direction of the magnetic film by an inverse spin Hall effect of the electrode.3. The thermoelectric converter element as recited in claim 1 , comprising a thermoelectromotive force output portion provided at two points on the electrode for outputting a thermoelectromotive force generated by the current as a potential difference between the two points.4. The thermoelectric converter element as recited in claim 1 , wherein the magnetization direction has a component in parallel to a film surface of the magnetic film claim 1 , and a spin current is ...

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05-12-2013 дата публикации

High Density Pyroelectric Thin Film Infrared Sensor Array and Method of Manufacture Thereof

Номер: US20130320481A1
Принадлежит: Bridge Semiconductor Corporation

A method of manufacturing a thermal sensor array comprises: (a) providing a first wafer comprising an integrated circuit; (b) providing a second wafer comprising a carrier substrate, a thermally sensitive layer, a first electrode and a second electrode; (c) applying a polymer to a bonding surface of at least one of the first wafer and the second wafer; (d) contacting the first wafer and the second wafer for a period of time and at a temperature and pressure sufficient to create a bond; (e) removing the carrier substrate; and (f) patterning and etching the thermally sensitive layer, the first electrode and the second electrode to create an array of pixels, wherein the first wafer and the second wafer are bonded without the need for fine alignment of the wafers. 1. A method of manufacturing a thermal sensing array comprising:(a) providing a first wafer comprising an integrated circuit;(b) providing a second wafer comprising a carrier substrate and a thermally sensitive layer sandwiched between a first electrode and a second electrode;(c) applying a polymer to a surface of at least one of the first wafer and the second wafer;(d) contacting the first wafer and the second wafer via the polymer for a period of time and at a temperature and pressure sufficient to create a bond;(e) removing the carrier substrate; and(f) patterning and etching the thermally sensitive layer, the first electrode, and the second electrode to create an array of pixels, wherein the first wafer and the second wafer are bonded without the need for fine alignment of the wafers.2. The method of claim 1 , wherein the polymer is parylene-C.3. The method of claim 1 , wherein the thermally sensitive layer is a pyroelectric material.4. The method of claim 3 , wherein the pyroelectric material is a thin film lead-based perovskite ferroelectric material.5. The method of claim 4 , wherein the lead-based perovskite ferroelectric material is lead zirconium titanate.6. The method of claim 5 , wherein the lead ...

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26-12-2013 дата публикации

ULTRASENSITIVE, SUPERFAST, AND MICROLITER-VOLUME DIFFERENTIAL SCANNING NANOCALORIMETER FOR DIRECT CHARACTIZATION OF BIOMOLECULAR INTERACTIONS

Номер: US20130344612A1
Автор: Zuo Lei
Принадлежит:

Disclosed is a differential scanning nanocalorimeter device, methods of fabricating such a device, and methods of use thereof. The nanocalorimeter contains thermal equilibrium areas for sample and reference liquids, with thermometers, compensation heater, and electric trace elements fabricated on a free-standing polymer diaphragm membrane. 1. A nanocalorimeter comprising: a polymer diaphragm with a plurality of thermal equilibrium areas , each thermal equilibrium area comprising at least one compensation heater and at least one microthermistor formed from a microthermistor trace sided by additional electrically conductive traces.2. The nanocalorimeter of claim 1 , wherein the polymer diaphragm is free-standing.3. The nanocalorimeter of claim 1 , wherein the polymer diaphragm comprises epoxy resin.4. The nanocalorimeter of claim 3 , wherein the epoxy resin is selected from SU-8 or a polyimide film.5. The nanocalorimeter of claim 1 , wherein the microthermistor trace comprises one or more of silicon carbide claim 1 , amorphous silicon carbide claim 1 , diamond claim 1 , amorphous germanium claim 1 , or silicon-germanium-boron alloy.6. The nanocalorimeter of claim 1 , wherein the additional electrically conductive traces are formed along either side of the microthermistor trace and comprise chromium claim 1 , gold claim 1 , or a chromium-gold alloy.7. The nanocalorimeter of claim 1 , comprising four microthermistors.8. The nanocalorimeter of claim 1 , wherein the polymer diaphragm further comprises a copper island formed on the underside of each thermal equilibrium area.9. The nanocalorimeter of claim 1 , wherein the epoxy resin is SU-8 with a thickness of about 20 μm.10. The nanocalorimeter of claim 1 , wherein the nanocalorimeter can measure thermal fluctuations of 10 μK or less.11. The nanocalorimeter of claim 1 , further comprising a cover made of polydimethylsiloxane (PDMS).12. A nanocalorimeter array comprising a plurality of nanocalorimeters according to .13. ...

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02-01-2020 дата публикации

METHOD OF FORMING OF A SEMI-TRANSPARENT DEVICE INTEGRATING A CAPACITOR STRUCTURE

Номер: US20200001327A1
Автор: LE RHUN Gwenaël

A method for producing an at least partially transparent device is provided, including producing, on a first substrate, first and second separation layers one against the other; producing, on the second separation layer, an at least partially transparent functional layer; making the functional layer integral with a second at least partially transparent substrate; forming a mechanical separation at an interface between the separation layers; removing the second separation layer; producing a first at least partially transparent electrode layer on the functional layer; where the materials of the stack are chosen such that the interface between the separation layers corresponds to that, among all the interfaces of the stack, having the lowest adherence force. 113.-. (canceled)14. A method for producing an at least partially transparent device , comprising:producing, on one face of a first substrate, first and second separation layers arranged one against the other and such that the first separation layer is arranged between the first substrate and the second separation layer;producing, on the second separation layer, at least one at least partially transparent functional layer;making the functional layer integral with a second at least partially transparent substrate, forming a stack of different materials;forming a mechanical separation at an interface between the first and the second separation layers, such that the first separation layer remains integral with the first substrate and that the second separation layer remains integral with the functional layer;removing the second separation layer;producing at least one first at least partially transparent electrode layer on the functional layer,wherein materials of the stack are chosen such that the interface between the first and the second separation layers corresponds to that having a lowest adherence force among all interfaces of the stack,{'sub': '2', 'wherein one of the first and the second separation layers ...

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01-01-2015 дата публикации

POWER-GENERATING SYSTEM

Номер: US20150001989A1
Принадлежит:

A power-generating system includes a heat source which is able to produce temporal temperature variation; a first device which is able to produce temporal temperature variation based on the temperature change of the heat source and in which polarization occurs; a second device for taking out a net generating power from the first device; a detection unit that detects the temperature of the first device; an electric field application unit that applies an electric field to the first device; and a control unit for activating the electric field application unit when the temperature detected by the detection unit is the Curie temperature of the first device or higher. 1. A power-generating system comprising:a heat source which is able to produce temporal temperature variation;a first device which is able to produce temporal temperature variation based on the temperature change of the heat source and in which polarization occurs,a second device for taking out a net generating power from the first device,a detection unit that detects the temperature of the first device,an electric field application unit that applies an electric field to the first device, anda control unit for activating the electric field application unit when the temperature detected by the detection unit is the Curie temperature of the first device or higher.2. A power-generating system comprising:a heat source which is able to produce temporal temperature variation; a matrix that is capable of polarization and', 'a dispersion material having a specific heat capacity that is lower than the specific heat capacity of the matrix, and', 'in which polarization occurs based on the temperature change of the heat source; and, 'a first device comprising'}a second device for taking out a net generating power from the first device.3. The power-generating system according to claim 2 , wherein the dispersion material is in a reduced state at 200 to 500° C. The present invention relates to a power-generating system. ...

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06-01-2022 дата публикации

METHOD AND APPARATUS FOR ETCHING TARGET OBJECT

Номер: US20220005700A1
Принадлежит:

A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas. 1. An apparatus for etching a processing target object , the apparatus comprising:a processing vessel;a gas supply unit;a plasma source; anda control unit configured to control the gas supply unit and the plasma source,wherein the control unit is further configured to perform processes comprising:a) preparing a processing target object having a first region as an etching target layer made of a first material containing silicon carbide and a second region as a mask containing silicon nitride;b) removing the first region by using the second region as a mask by repeating a sequence comprising:b-1) forming a layer containing nitrogen in the first region by exposing the processing target object to nitrogen containing plasma;b-2) after the forming of the layer, removing the layer by exposing the processing target object to fluorine containing plasma.2. The apparatus of claim 1 ,wherein the nitrogen containing plasma is generated from a nitrogen-containing gas.3. The apparatus of claim 1 ,{'sub': 2', '2', '2, 'wherein the nitrogen containing plasma is generated from a Ngas or a mixed gas containing a Ngas and an Ogas.'}4. The apparatus of claim 1 ,{'sub': 3', '2', '2, 'wherein the ...

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20-01-2022 дата публикации

MICROSYSTEM AND METHOD FOR MAKING A MICROSYSTEM

Номер: US20220018716A1
Автор: ECKART Lutz, PHAIR John
Принадлежит:

The invention relates to a microsystem () comprising a substrate (), a bottom electrode () arranged on the substrate (), a ferroelectric layer () arranged on the bottom electrode (), a top electrode () arranged on the ferroelectric layer () and an isolation layer () that is electrically isolating, that is arranged on the top electrode (), that extends from the top electrode () to the substrate () so that the isolation layer () covers the bottom electrode (), the ferroelectric layer () and the substrate () in a region around the complete circumference of the bottom electrode (), and the isolation layer () has the shape of a ring that confines in its centre a through hole () that is arranged in the region of the top electrode (). 1. A microsystem comprising a substrate , a bottom electrode arranged on the substrate , a ferroelectric layer arranged on the bottom electrode , a top electrode arranged on the ferroelectric layer and an isolation layer that is electrically isolating , that is arranged on the top electrode , that extends from the top electrode to the substrate so that the isolation layer covers the bottom electrode , the ferroelectric layer and the substrate in a region around the complete circumference of the top electrode , and the isolation layer has the shape of a ring that confines in its centre a through hole that is arranged in the region of the top electrode.2. A microsystem comprising a substrate , a bottom electrode arranged on the substrate , a ferroelectric layer arranged on the bottom electrode , a top electrode arranged on the ferroelectric layer and an isolation layer that is electrically isolating , that is arranged on the top electrode , that extends from the top electrode to the substrate so that the isolation layer covers the bottom electrode , the ferroelectric layer and the substrate in a region around essentially the complete circumference of the top electrode , and the isolation layer has the shape of a ring that confines in its centre ...

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21-01-2016 дата публикации

Superconducting thermal detector (bolometer) of terahertz (sub-millimeter wave) radiation

Номер: US20160018267A1
Принадлежит:

A superconducting thermal detector (bolometer) of THz (sub-millimeter) wave radiation based on sensing the change in the amplitude or phase of a resonator circuit, consisting of a capacitor (Csh) and a superconducting temperature dependent inductor where the said inductor is thermally isolated from the heat bath (chip substrate) by micro-suspensions. The bolometer design includes a thin film inductor located on the membrane, a single or/and multi-layered thin film capacitor, and a thin film absorber of incoming radiation. The bolometer design can also include a lithographic antenna with antenna termination and/or a back reflector beneath the membrane for optimal wavelength detection by the resonance circuit. The superconducting thermal detector (bolometer) and arrays of these detectors operate in a temperature range from 1 Kelvin to 10 Kelvin.

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17-04-2014 дата публикации

MULTI-STACK FILM BOLOMETER

Номер: US20140103210A1
Принадлежит: ROBERT BOSCH GMBH

A semiconductor device includes a substrate, suspension structures extending from the upper surface of the substrate, and an absorber stack attached to the substrate by the suspension structures. The suspension structures suspend the absorber stack over the substrate such that a gap is defined between the absorber stack and the substrate. The absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers. At least one of the metallization layers has a thickness of approximately 10 nm or less. 1. A semiconductor device comprising:a substrate having an upper surface that defines a sensing region;suspension structures extending from the upper surface of the substrate around the sensing region; andan absorber stack attached to the substrate by the suspension structures, the suspension structures suspending the absorber stack over the sensing region and spaced apart from the sensing region such that a gap is defined between the absorber stack and the sensing region,wherein the absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers, andwherein at least one of the metallization layers has a thickness of approximately 10 nm or less.2. The device of claim 1 , wherein each of the metallization layers has a thickness of approximately 10 nm or less.3. The device of claim 2 , wherein at least one of the metallization layers has a thickness of 5 nm or less.4. The device of claim 2 , wherein each of the metallization layers is formed of one of platinum claim 2 , titanium claim 2 , and titanium nitride.5. The device of claim 2 , wherein each of the metallization layers is deposited using an atomic layer (ALD) deposition process.6. The device of claim 2 , wherein each of the insulating layers has a thickness of 20 nm or less.7. The device of claim 6 , wherein at least one of the insulating layers has a thickness of 5 nm or less.8. The device of claim 6 , wherein each of the ...

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17-04-2014 дата публикации

Graphene-based films in sensor applications

Номер: US20140103298A1
Принадлежит: Stevens Institute of Technology

An environmental sensor comprises a graphene thin-film as an environmentally responsive material. Such graphene films exhibit negative temperature coefficients (NTC), resulting in rapid decreases in electrical resistance as temperature increases, as well as a much faster response time than any other NTC material reported in the literature. The graphene film is also mechanically stable under bending, and, therefore, can be adapted for use in a mechanical sensor or pressure sensor, because the electrical resistance of the graphene film changes upon deflection and/or changes in pressure. The electrical resistance of the graphene film also increases in response to increases in environmental humidity. The electrical resistance changes of the graphene film can also be used as a sensing mechanism for changes in chemical and biological parameters in the environment of the sensor.

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17-04-2014 дата публикации

INVERTED ORTHOGONAL SPIN TRANSFER LAYER STACK

Номер: US20140103472A1
Автор: Backes Dirk, KENT Andrew
Принадлежит: New York University

A magnetic device includes a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. The magnetic device also includes a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state. The magnetic device also has a first non-magnetic layer and a reference. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer. The magnetic device also includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device switches the variable magnetization vector. 1. A magnetic device comprising:a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction;a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state;a first non-magnetic layer spatially separating the pinned magnetic layer and the free magnetic layer;a reference magnetic layer having a second fixed magnetization vector with a second fixed magnetization direction; anda second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer, wherein a magnetic tunnel junction is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer, wherein application of a current pulse, having a selected amplitude and duration, through the magnetic device switches the variable magnetization vector, and wherein the magnetic tunnel junction is spatially located below the pinned magnetic layer.2. The magnetic device of claim 1 , wherein the ...

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03-02-2022 дата публикации

Portable power supply

Номер: US20220037576A1
Принадлежит: NEC Corp

A portable power supply according to the present invention is provided with a combustion device (20) and a heating container (30) that retains an object to be heated, wherein at least a part of a portion of the heating container, the portion being directly heated by the combustion device, is provided with a magnetic metal plate (32) that has spontaneous magnetization and that generates electromotive force due to an anomalous Nernst effect induced by the heating, and wherein electrodes (33a, 33b) for drawing power are provided. Thus, the heating container for generating electricity has a simple configuration, and furthermore the portable power supply is provided with both the heating container and the combustion device.

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16-01-2020 дата публикации

HEAT EXCHANGE DEVICE, HEAT EXCHANGE SYSTEM, AND HEAT EXCHANGE METHOD

Номер: US20200020842A1
Принадлежит: NEC Corporation

[Problem] To provide a heat exchange device with which efficient electric power generation can be performed while transfer of a heat amount is maintained. [Solution] A heat exchange device comprising a heat exchange section and a magnetic body The heat exchange section includes a first heat transmission interface in contact with a heat source, and a second heat transmission interface in contact with a heat bath having a temperature different from that of the heat source. The magnetic body is interposed between the first heat transmission interface and the second heat transmission interface of the heat exchange section and includes a magnetization component in a direction intersecting a heat flux produced between the first heat transmission interface and the second heat transmission interface

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25-01-2018 дата публикации

PYROELECTRIC INFRARED SENSOR DEVICE

Номер: US20180026173A1
Принадлежит:

A pyroelectric infrared sensor device comprising: a pyroelectric infrared sensor part (); and a cover member (). The pyroelectric infrared sensor part comprises: a pyroelectric element (); a housing () that the pyroelectric element is placed inside of and comprises an opening at a position facing a light receiving surface of the pyroelectric element; and an infrared transmission filter () that is located to cover the opening of the housing. The cover member covers at least a top surface of the pyroelectric infrared sensor part. The infrared transmission filter transmits light equal to or greater than a wavelength of 1 μm. The cover member has a property that a transmittance of infrared light having a wavelength of from 3 μm to 5.5 μm is equal to or greater than 10% and has a uniform material quality in an area corresponding to the top surface of the pyroelectric infrared sensor part. 1. A pyroelectric infrared sensor device comprising:a pyroelectric infrared sensor part; anda cover member, wherein a pyroelectric element;', 'a housing that the pyroelectric element is placed inside of and comprises an opening at a position facing a light receiving surface of the pyroelectric element; and', 'an infrared transmission filter that is located to cover the opening of the housing,, 'the pyroelectric infrared sensor part comprisesthe cover member covers at least a top surface of the pyroelectric infrared sensor part in a place where the cover member faces the infrared transmission filter of the pyroelectric infrared sensor part,the infrared transmission filter has a property to transmit light equal to or greater than a wavelength of 1 μm, andthe cover member has a property that a transmittance of infrared light having a wavelength of from 3 μm to 5.5 μm is equal to or greater than 10% and has a uniform material quality in an area corresponding to the top surface of the pyroelectric infrared sensor part.2. The pyroelectric infrared sensor device according to claim 1 , wherein ...

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23-01-2020 дата публикации

PYROELECTRIC DETECTION DEVICE WITH STRESSED SUSPENDED MEMBRANE

Номер: US20200025620A1

Pyroelectric detection device, comprising at least: 1. Pyroelectric detection device , comprising at least:a suspended membrane;a pyroelectric detection element located on the suspended membrane and comprising at least one portion of pyroelectric material located between first and second electrodes, the first electrode being located between said at least one portion of pyroelectric material and the suspended membrane;and in which the suspended membrane and the pyroelectric detection element are subjected to a higher compression stress than a limiting buckling stress of the suspended membrane and the pyroelectric detection element and together form a bistable structure.2. The pyroelectric detection device according to claim 1 , wherein the suspended membrane comprises at least one of the following materials: SiO claim 1 , Si claim 1 , SiN.3. The pyroelectric detection device according to claim 1 , also comprising a substrate in which at least one cavity is formed claim 1 , the suspended membrane comprising edges fixed to the substrate and at least one suspended part located facing said at least one cavity.4. The pyroelectric detection device according to claim 1 , wherein the pyroelectric detection element comprises a black body comprising at least one of the second electrode and a portion of material absorbing infrared radiation located on the second electrode.5. The pyroelectric detection device according to claim 4 , wherein the material absorbing infrared radiation comprises at least one of the following materials: TiN claim 4 , Ni—Cr claim 4 , Ni claim 4 , black metal such that platinum black or black gold.6. The pyroelectric detection device according to claim 1 , wherein the pyroelectric material corresponds to at least one of the following materials: PZT claim 1 , AlN claim 1 , KNN claim 1 , NBT-BT claim 1 , PMN-PT claim 1 , LTO claim 1 , LNO claim 1 , PVDF.7. The pyroelectric detection device according to claim 1 , wherein the first electrode comprises ...

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25-01-2018 дата публикации

Reciprocal Hall Effect Energy Generation Device

Номер: US20180026555A1
Автор: Levy George Samuel
Принадлежит:

When a magnetic field is applied parallel to a layer of thermoelectric material, and an electric field is applied perpendicular to the layer, electrical carriers in the layer follow cyclotron orbits interrupted by one of the layer's surfaces. These interrupted orbits produce a drift current along the layer and perpendicular to both fields. Therefore, the inputs are a magnetic field and an electric field, and the output is a current. The phenomenon differs from the classical Hall Effect in which the inputs are a magnetic field and a current and the output is a voltage. The output current produces electrical energy which can be used immediately, stored for later consumption, converted to another form or transmitted to another location. Layers can be stacked, each layer of the stack mutually reinforcing the electrical field in the adjacent stack layers. Stacked layers can be connected in series or parallel. 1. An energy generator comprising:a) a layer composed of semiconductor material, said layer holding electrical carriers;b) a means for producing a magnetic field parallel to said layer;c) a means for producing an electric field perpendicular to said layer, said means for producing an electric field being electrically insulated from said layer;d) said layer having two ends located along an axis in a plane of said layer and perpendicular to both said magnetic field and said electric field;e) electrodes in contact at each of said ends of said layera voltage being produced between said ends of said layer, said electrodes capturing an electrical current, said voltage and said current representing useful electrical energy to be used, stored, converted or transmitted.2. The energy generator of wherein said semiconductor material is a thermoelectric material.3. The energy generator of wherein said thermoelectric material as a ZT factor greater than 0.5.4. The energy generator of wherein said thermoelectric material as a ZT factor greater than 1.5. The energy generator of ...

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23-01-2020 дата публикации

ACTIVE THERMAL PATTERN SENSOR COMPRISING A PASSIVE MATRIX OF PIXELS

Номер: US20200026897A1
Принадлежит:

Thermal pattern sensor including a matrix of multiple rows and columns of pixels, each pixel comprising: a pyroelectric capacitor comprising a pyroelectric portion positioned between lower and upper electrodes, in which a first of these electrodes forms a readout electrode; and a heating element that is capable of heating the pyroelectric portion of said pixel; and in which: for each row of pixels, the heating elements are capable of heating the pyroelectric portion of the pixels of the row independently of the heating elements of the pixels of the other rows; and for each column of pixels, the readout electrodes of each pixel are electrically linked to one another and are formed by a first electrically conductive portion that makes contact with the pyroelectric portions of the pixels of the column, and that is separate from the first portions of the other columns. 113-. (canceled)14. A thermal pattern sensor comprising a matrix of several lines and columns of pixels , each pixel including at least:a pyroelectric capacitance formed by at least one portion of pyroelectric material arranged between a lower electrode and an upper electrode, in which a first of the lower and upper electrodes corresponds to a reading electrode of the pixel, anda heating element able to heat the portion of pyroelectric material of the pyroelectric capacitance of said pixel during a measurement of the thermal pattern by the pyroelectric capacitance of said pixel, and in which:for each line of pixels, the heating elements of the pixels of said line are configured to heat the portions of pyroelectric material of the pixels of said line independently of the heating elements of the pixels of the other lines, andfor each column of pixels, the reading electrodes of each pixel of said column are electrically connected together and formed by at least one first electrically conductive portion in contact with the portions of pyroelectric material of the pixels of said column and distinct from the ...

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23-01-2020 дата публикации

THERMOELECTRIC DEVICE UTILIZING NON-ZERO BERRY CURVATURE

Номер: US20200028060A1
Принадлежит:

Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field. 1. A thermoelectric device comprising:a thermoelectric element including a material having a non-zero Berry curvature.2. The thermoelectric device of wherein the thermoelectric element is configured to generate a voltage in response to being exposed to a temperature gradient.3. The thermoelectric device of wherein the thermoelectric element is configured to generate a temperature gradient in response to application of an electrical current.4. The thermoelectric device of wherein the non-zero Berry curvature is along an axis of the material orthogonal to a temperature gradient to which the thermoelectric element is exposed or the thermoelectric element generates.5. The thermoelectric device of wherein the thermoelectric element has a first side claim 1 , a second side located a first distance from the first side along a first dimension claim 1 , a third side that intersects the first and second sides claim 1 , and a fourth side located a second distance from the third side along a second dimension orthogonal to the first dimension and that intersects the first and second sides claim 1 , the thermoelectric device further comprising:a first thermal coupler configured to thermally couple the first side to a heat source; anda second thermal coupler configured to thermally couple the second side to a heat sink,wherein a voltage is ...

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05-02-2015 дата публикации

PYROELECTRIC ALUMINUM NITRIDE MEMS INFRARED SENSOR WITH SELECTIVE WAVELENGTH INFRARED ABSORBER

Номер: US20150035110A1
Принадлежит:

A MEMS sensor for detecting electromagnetic waves in a particular frequency range is provided. In a preferred embodiment, the MEMS sensor comprises a bottom substrate layer; a first electrode layer over the substrate layer; a pyroelectric layer over the first electrode layer; and a second electrode layer over the pyroelectric layer; wherein a top electrode layer is patterned with a periodic structure that has a periodicity less than or equal to target infrared wavelength. 1. A MEMS sensor comprising:a substrate layer;a first electrode layer adjacent the substrate layer;a pyroelectric layer adjacent the first electrode layer; anda second electrode layer adjacent the pyroelectric layer,wherein the second electrode layer is patterned with a periodic structure that has a periodicity less than or equal to 8 μm.2. The sensor of claim 1 , wherein the patterned periodic structure comprises a hole array structure.3. The sensor of claim 1 , wherein the patterned periodic structure comprises a stripe structure.4. The sensor of claim 1 , wherein the periodic structure has a periodicity less than or equal to a target infrared wavelength according to the equation P≦λ where P is periodicity and λ is target infrared wavelength.5. The sensor of claim 1 , wherein the sensor is comprised of at least two sensor elements and each of the two sensor elements has a periodic structure patterned with different periodicities.65. The sensors of through claims 1 , wherein the pyroelectric layer comprises a material selected from the group consisting of PZT claims 1 , ZnO claims 1 , PVDF claims 1 , AlN claims 1 , and c-axis oriented AlN.7. The sensor of claim 1 , wherein the first electrode layer has a thickness ranging from about 10 nm to about 1000 nm.8. The sensor of claim 1 , wherein the first electrode layer comprises Molybdenum.9. The sensor of claim 1 , wherein the pyroelectric layer comprises AlN.10. The sensor of claim 1 , wherein the pyroelectric layer has a thickness according to the ...

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04-02-2021 дата публикации

POLYMERS FOR CALORIC APPLICATIONS

Номер: US20210032384A1

Various embodiments disclosed relate to unsaturated polymers that exhibit electrocaloric properties. The polymers can be useful as heat transfer materials in heating and cooling applications. 2. The polymer of claim 1 , wherein at each occurrence R claim 1 , R claim 1 , R claim 1 , and Rare independently chosen from H claim 1 , F claim 1 , Cl claim 1 , and Br.3. The polymer of claim 1 , wherein at each occurrence R claim 1 , R claim 1 , R claim 1 , and Rare each independently chosen from H and F.4. The polymer of claim 1 , wherein the polymer is unbranchcd.5. The polymer of claim 1 , wherein the polymer comprises a co-polymer of at least one monomer selected from trifluoroethylene (TrFE) claim 1 , tetrafluoroethylene (TFE) claim 1 , fluoroethylene (FE) claim 1 , ethylene (ET) claim 1 , 1-chloro-1-fluoroethylen (CFE) claim 1 , chlorotrifluoroethylene (CTFE) claim 1 , chlorodifluoroethylene (CDFE) claim 1 , vinylidene chloride (VDC) claim 1 , tetrachloroethylene (TCE) claim 1 , tetrabromoethylene (TBE) claim 1 , tribromoethylene (TrBE) claim 1 , 1 claim 1 ,1-dibromoethylene (DBE) claim 1 , bromoethylene (BE) claim 1 , 1 claim 1 ,1-dibromo-2 claim 1 ,2-difluoroethylene (DBDFE) claim 1 , or 1 claim 1 ,1-dichloro-2 claim 1 ,2-dibromoethylene (DCDBE) claim 1 , or combinations thereof.6. The polymer of claim 5 , wherein the co-polymer comprises a terpolymer.7. The polymer of claim 1 , wherein the polymer exhibits an adiabatic temperature change of at least 1° C. when the polymer is exposed to an electric field.8. The polymer of claim 1 , wherein the polymer has a number average molecular (M) weight of between about 5 claim 1 ,000 g/mol and about 100 claim 1 ,000 g/mol.9. The polymer of claim 5 , wherein the polymer is a co-polymer of TrFE.10. A method of making the polymer of claim 1 , comprising:reacting a saturated precursor of the compound of Formula I with a base to form the polymer of Formula I.11. The method of claim 10 , wherein the base is an alkali metal hydroxide ...

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17-02-2022 дата публикации

Thermoelectric conversion element

Номер: US20220052247A1
Принадлежит: NEC Corp

A thermoelectric conversion element that has a power generation layer containing an iron-aluminum based magnetic alloy material containing equal to or more than 70 weight percent of iron and aluminum in total. The power generation layer generates an electromotive force, due to an anomalous Nernst effect that develops in the magnetic alloy material in response to a temperature gradient applied thereto, in a direction intersecting both the magnetization direction of the magnetic alloy material and the direction of the applied temperature gradient.

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30-01-2020 дата публикации

CONVERSION MATERIAL

Номер: US20200035895A1
Автор: Raccis Riccardo
Принадлежит:

The present invention provides a conversion material including a first phase providing a matrix and a second phase comprising a nanoscale or microscale material providing electron mobility. The conversion material converts heat from a single macroscopic reservoir into voltage. 1. A thermal energy to electrical energy conversion material comprising:a first phase providing a matrix; anda second phase comprising a nanoscale or microscale material providing electron mobility, the second phase comprising particles with an aspect ratio greater than 1,wherein the second phase provides electrical conducting channels throughout the conversion material wherein, andthe second phase comprises barbed tendrils, with a majority of the barbed tendrils pointing in one direction.2. The conversion material according to claim 1 , wherein the first phase comprises an insulator.3. The conversion material according to claim 1 , wherein the second phase comprises a semiconducting material or a conducting material.4. The conversion material according to claim 3 , wherein:the semiconducting material is selected from carbon nanotubes and graphene; andthe conducting material is selected from a material in which charge carriers move freely within a stationary structure.5. The conversion material according to claim 1 , wherein the first phase comprises a non-conductive polymer.6. The conversion material according to claim 1 , wherein the second phase comprises particles with a dimension of 100 μm or less.7. (canceled)8. The conversion material according to claim 5 , wherein the first phase comprises an acrylic polymer.9. A conversion element claim 5 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the conversion material according to ; and'}two electrodes connected to the conversion element.10. A conversion module claim 5 , comprising:{'claim-ref': {'@idref': 'CLM-00009', 'claim 9'}, 'the conversion element according to .'}11. A generator claim 9 , comprising: the conversion ...

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08-02-2018 дата публикации

Coherence Capacitor For Quantum Information Engine

Номер: US20180040799A1
Принадлежит:

System for storing and using energy quantum mechanically includes an electronic device that produces heat while operating. A quantum heat engine can be in thermal contact with and electrically connected to the electronic device. The heat produced by the electronic device can dissipate to the quantum heat engine. The quantum heat engine can induce a current to bias the electronic device. Methods for storing and using memory resource to convert heat into electrical work, coherence capacitors, methods for quantum energy storage, and quantum heat engines, are also disclosed. 1. A system for storing and using quantum energy , comprising:an electronic device that produces heat while operating;a quantum heat engine in thermal contact with the electronic device and electrically connected to the electronic device,wherein the heat produced by the electronic device dissipates to the quantum heat engine,wherein quantum heat engine generates an induced current to bias the electronic device.2. The system of claim 1 , wherein:the quantum heat engine comprises a quantum information engine and a coherence capacitor, the quantum information engine absorbing heat from its surroundings and using memory resources from the coherence capacitor to generate the induced current.3. The system of claim 2 , wherein:the the quantum information engine comprises a topological insulator having at least one edge, and the coherence capacitor comprises nuclei of atoms within the topological insulator, each nucleus of the nuclei having a spin direction, andthe topological insulator has a plurality of electrons along the at least one edge, each electron initially having a spin direction that is one of up-spin or down-spin corresponding to moving in a first direction or a second direction along the at least one edge, respectively,when one of the electrons having up-spin interacts with one of the nuclei having down-spin, the one of the nuclei flips to up-spin and the one of the electrons backscatters in ...

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24-02-2022 дата публикации

ADVANCED MULTI-LAYER ACTIVE MAGNETIC REGENERATOR SYSTEMS AND PROCESSES FOR MAGNETOCALORIC LIQUEFACTION

Номер: US20220057119A1
Принадлежит:

A process for liquefying a process gas that includes introducing a heat transfer fluid into an active magnetic regenerative refrigerator apparatus that comprises a single stage comprising dual multilayer regenerators located axially opposite to each other. 1. A system comprising:a first active magnetic regenerative regenerator comprising 2 to 16 successive layers, wherein each layer comprises an independently compositionally distinct magnetic refrigerant material having an independent Curie temperature and wherein the first layer of the first active magnetic regenerative regenerator has the highest Curie temperature and the last layer of the first active magnetic regenerative regenerator has the lowest Curie temperature;a second active magnetic regenerative regenerator comprising 2 to 16 successive layers, wherein each layer comprises an independently compositionally distinct magnetic refrigerant material having an independent Curie temperature and wherein the first layer of the second active magnetic regenerative regenerator has the lowest Curie temperature and the last layer of the second active magnetic regenerative regenerator has the highest Curie temperature;at least one conduit fluidly coupled between the lowest Curie temperature layer of the first active magnetic regenerative regenerator and the highest Curie temperature layer of the second active magnetic regenerative regenerator;a single bypass flow heat exchanger (a) fluidly coupled to the lowest Curie temperature layer of the first active magnetic regenerative regenerator and (b) fluidly coupled to a process gas source; andfor each layer of the first active magnetic regenerative regenerator and each layer of the second active magnetic regenerative regenerator, an independent fluid conduit between an outlet of each layer of the first active magnetic regenerative regenerator to an inlet of the corresponding Curie temperature layer of the second active magnetic regenerative regenerator, except for lowest ...

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15-02-2018 дата публикации

APPARATUS COMPRISING A SENSOR ARRANGEMENT AND ASSOCIATED FABRICATION METHODS

Номер: US20180047814A1
Автор: Allen Mark, White Richard
Принадлежит:

An apparatus comprising: a plurality of sensors () arranged in an array (), each sensor having a source electrode (), a drain electrode (), a gate electrode () and a channel, wherein the source electrode and drain electrode are elongate and the channel has a channel width defined by the longitudinal extent of the source and/or drain electrode and a channel length defined by the separation between the source and drain electrodes; a common conductive or semiconductive layer (), which may be made of graphene, comprising the channels of the sensors () and arranged to extend over the plurality of sensors of the array and configured to be in electrical contact with at least the source electrode and the drain electrode of each sensor; and wherein the source electrode or drain electrode of each sensor forms a substantially continuous sensor perimeter at least along the channel width, which substantially encloses the other electrode of each sensor to inhibit the flow of charge carriers beyond the sensor perimeter to inhibit crosstalk between sensors in the array. 1. An apparatus comprising:a plurality of electrode pairs arranged in an array, each electrode pair comprising a source electrode and a drain electrode; anda common conductive or semiconductive layer arranged to extend over the plurality of electrode pairs of the array and configured to be in electrical contact with the source electrode and the drain electrode of each electrode pair to create an array of sensors;wherein each sensor has a source electrode, a drain electrode and a channel formed by part of the common conductive or semiconductive layer, one of the source and the drain electrodes configured to receive a flow of charge carriers for injecting into the channel and the other configured to provide a current sink for said flow of charge carriers from the channel, wherein the source electrode and drain electrode are elongate and the channel has a channel width defined by the longitudinal extent of the source ...

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14-02-2019 дата публикации

Compositions, apparatus and methods for capacitive temperature sensing

Номер: US20190049318A1
Принадлежит: 3M Innovative Properties Co

A passive temperature-sensing apparatus, which includes a capacitive sensing element that includes a capacitive sensing composition that includes a ferroelectric ceramic material that exhibits a measurable electrical Curie temperature that is below 30 degrees C. The capacitive sensing composition exhibits a negative slope of capacitance versus temperature over the temperature range of from 30 degrees C. to 150 degrees C.

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25-02-2016 дата публикации

Micromechanical Sensor Device and Corresponding Production Method

Номер: US20160056365A1
Принадлежит:

A micromechanical sensor device and a corresponding production method include a substrate that has a front and a rear and a plurality of pillars that are formed on the front of the substrate. On each pillar, a respective sensor element is formed, which has a greater lateral extent than the associated pillar. A cavity is provided laterally to the pillars beneath the sensor elements. The sensor elements are laterally spaced apart from each other by respective separating troughs and make electrical contact with a respective associated rear contact via the respective associated pillar. 1. A micromechanical sensor device , comprising:a substrate having a front side and a rear side;a plurality of columns formed on the front side of the substrate;a respective sensor element formed on each column, said sensor element having a larger lateral extent than the associated column; anda cavity defined laterally with respect to the columns below the sensor elements,wherein the sensor elements are laterally spaced apart from one another by respective isolating trenches and are electrically contacted via the respective associated column at a respective associated rear-side contact.2. The micromechanical sensor device as claimed in claim 1 , wherein the sensor elements have a respective front-side contact and wherein the front-side contacts lie on a side of the sensor elements that faces away from the substrate.3. The micromechanical sensor device as claimed in claim 2 , wherein the substrate has an edge region with a ring contact that is led via a corresponding edge wall on the side of the sensor elements and is laterally spaced apart from the sensor elements by the respective isolating trenches.4. The micromechanical sensor device as claimed in claim 1 , wherein the sensor elements are infrared-sensitive and have a pyroelectric layer embedded between a first electrode layer and a second electrode layer.5. The micromechanical sensor device as claimed in claim 4 , wherein the sensor ...

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14-02-2019 дата публикации

APPARATUS AND METHOD FOR GENERATING ELECTRICAL ENERGY

Номер: US20190051809A1
Принадлежит:

An apparatus for generating electrical energy comprises an oscillating heat pipe for transferring heat between a heat source and a heat sink, and a pyroelectric generator for generating electricity from thermal fluctuations generated by the oscillating heat pipe as the oscillating heat pipe transfers heat between the heat source and the heat sink. 1. An apparatus for generating electrical energy , the apparatus comprising:an oscillating heat pipe for transferring heat between a heat source and a heat sink; anda pyroelectric generator for generating electricity from thermal fluctuations generated by the oscillating heat pipe as the oscillating heat pipe transfers heat between the heat source and the heat sink.2. An apparatus as claimed in claim 1 , wherein the oscillating heat pipe comprises a plurality of channel sections arranged between the heat source and the heat sink.3. An apparatus as claimed in claim 2 , wherein the plurality of channel sections are arranged substantially in parallel to one another in a generally orthogonal direction between the heat source and the heat sink claim 2 , and interconnected to form a common fluid carrying channel.4. An apparatus as claimed in claim 3 , wherein the plurality of channel sections are arranged in a common plane claim 3 , and wherein each outer channel section in the plane has a first end connected to a respective first end of its neighbouring channel section claim 3 , and a second end connected to a respective second end of the other outer channel section claim 3 , and wherein each inner channel section in the plane has a first end connected to a respective first end of a neighbouring channel section in a first orthogonal direction claim 3 , and a second end connected to a respective second end of a neighbouring channel section in a second orthogonal direction.5. An apparatus as claimed in claim 4 , wherein the first ends are located towards a heat source side of the oscillating heat pipe claim 4 , and the second ...

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23-02-2017 дата публикации

ELECTROCALORIC DEVICE

Номер: US20170054066A1

The present disclosure is drawn to electrocaloric devices, methods of making electrocaloric integrated circuits, and methods of thermally cycling integrated circuits. The electrocaloric device can include an electrocaloric material having a solid solution of two or more components of BNT, BKT, BZT, BMgT, or BNiT. The electrocaloric material can have an ergodic transition temperature within a range of 50 C to 300 C. The device can also include electrodes associated with the electrocaloric material, as well as an electrical source to add or reduce electrical field between the electrodes across the electrocaloric material to generate heating or cooling relative to the ergodic transition temperature of the electrocaloric material. 1. An electrocaloric device , comprising:an electrocaloric material comprising a solid solution of two or more components selected from the group consisting of BNT, BKT, BZT, BMgT, and BNiT, wherein the electrocaloric material has an ergodic transition temperature within a range of 50° C. to 300° C.;electrodes associated with the electrocaloric material; andan electrical source to add or reduce electrical field between the electrodes across the electrocaloric material to generate cooling relative to the ergodic transition temperature of the electrocaloric material.2. The electrocaloric device of claim 1 , wherein the electrocaloric device is part of a multilayer film stack or bulk device within an integrated circuit.3. The electrocaloric device of claim 2 , wherein the integrated circuit includes an electrical feature claim 2 , and the electrocaloric material is in thermal communication with the electrical feature for thermally cooling the electrical feature.4. The electrocaloric device of claim 3 , wherein the electrical feature also acts as one of the electrodes for the electrocaloric material.5. The electrocaloric device of claim 1 , further comprising an attachment mechanism or adhesive for attaching the electrocaloric device to an ...

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01-03-2018 дата публикации

METHOD FOR MANUFACTURING FERROELECTRIC THIN FILM DEVICE

Номер: US20180062068A1
Принадлежит: Sumitomo Chemical Company, Limited

There is provided a method for manufacturing a ferroelectric thin film device including: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate on the lower electrode film; a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; and a thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step. The predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M. 1. A method for manufacturing a ferroelectric thin film device , the method comprising:a lower electrode film formation step of forming a lower electrode film on a substrate, the substrate having an underside;{'sub': 1-x', 'x', '3, 'a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate (typical chemical formula of (KNa)NbO, 0.4≦x≦0.7) on the lower electrode film;'}a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; anda thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step, whereinthe predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M.2. The method for manufacturing a ferroelectric thin film device according to claim 1 ,wherein an amount of ...

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08-03-2018 дата публикации

SOLID STATE COOLING DEVICE

Номер: US20180066875A1
Принадлежит:

This invention relates to a cooling device which utilizes both thermoelectric and magnetocaloric mechanisms for enhanced cooling applications. Using high thermal conductivity magnetocaloric composites in conjunction with thermoelectric elements acting as thermal switches which are electrically coupled to a magnetization and demagnetization cycle enables the use of larger quantities of magnetocaloric material, and high efficiency solid state cooling can be achieved. Solid state cooling devices are useful for a variety of industrial applications which require cooling, such as, but not limited to cooling of microelectronic devices, cooling on space platforms, etc. 1. A cooling device comprising a hot side , a cold side , at least two thermoelectric layers , at least one magnetocaloric composite , and a magnetic field; whereinthe at least one magnetocaloric composite is positioned in between the at least two thermoelectric layers; and whereinthe at least one magnetocaloric composite comprises at least one magnetocaloric material and at least one thermally conductive material with thermal conductivity greater than 75 W/(m K) at an operating temperature of the cooling device, wherein the magnetocaloric material and the thermally conductive material are not the same;wherein the magnetic field enables the magnetocaloric effect of the magnetocaloric material in the magnetocaloric composite when at least one magnetization and demagnetization cycle is performed, wherein a change in temperature of the magnetocaloric material occurs when the magnetic field applied to the material is increased or decreased;wherein the at least one magnetization and demagnetization cycle comprises increasing the magnetic field force on the magnetocaloric material at a predefined magnetic field ramp-up speed, maintaining the increased magnetic field on the magnetocaloric material for a specified holding time, decreasing the magnetic field force on the magnetocaloric material at a predefined ramp- ...

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10-03-2016 дата публикации

THERMOELECTRIC CONVERSION ELEMENT

Номер: US20160072038A1
Автор: Kado Masaki, Yuasa Hiromi
Принадлежит:

A thermoelectric conversion element comprises: a substrate; an insulating ferromagnetic layer provided on the substrate and having a magnetization fixed in one direction; and a nonmagnetic metal layer provided on the ferromagnetic layer. The substrate is configured from an organic type material whose thermal conductivity is not less than 0.15 W/Km and not more than 1.5 W/Km, whose Young's modulus is not less than 0.2 Gpa and not more than 7 Gpa, and whose film thickness is 100 μm or less. 1. A thermoelectric conversion element , comprising:a substrate;an insulating ferromagnetic layer provided on the substrate and having a magnetization fixed in one direction; anda nonmagnetic metal layer provided on the ferromagnetic layer,the substrate being configured, from an organic type material whose thermal conductivity is not less than 0.15 W/Km and not more than 1.6 W/Km, whose Young's modulus is not less than 0.2 Gpa and not more than 7 Gpa, and whose film thickness is 100 μm or less.2. The element according to claim 1 , whereinthe film thickness of the substrate is 10 μm or less.3. The element according to claim 1 , whereina film thickness ratio of the substrate to the ferromagnetic layer is 1,000 or less.4. The element according to claim 1 , whereina film thickness ratio of the substrate to the ferromagnetic layer is 100 or less.5. The element according to claim 1 , whereinthe organic type material includes any of: a polyimide blend including simple substance or compound of a metal element; polytetrafluoroethylene; polyethylene; polypropylene; a polycarbonate; nylon; and a polyester.6. A thermoelectric conversion element claim 1 , comprising:a substrate;an insulating ferromagnetic layer provided on the substrate and having a magnetization fixed in one direction; anda nonmagnetic metal layer provided on the ferromagnetic layer,the substrate being configured from a glass type material whose thermal conductivity is not less than 0.6 W/Km and not more than 160 W/Km, whose ...

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11-03-2021 дата публикации

ELECTROCALORIC COOLING WITH ELECTROSTATIC ACTUATION

Номер: US20210071917A1
Принадлежит:

A solid-state heat transporting device including a heat transporting element whose uniformity of contact with one or multiple surfaces is controllable so that various amounts of heat may be transported to and from the one or multiple surfaces. The heat transporting element uses the electrocaloric effect to absorb and release the heat and the uniformity of contact is controlled using an electrostatic effect which may change the shape of the heat transporting element. In one embodiment, the heat transporting element is an electrostatically actuated P(VDF-TrFE-CFE) polymer stack achieving a high specific cooling power of 2.8 W/g and a COP of 13 (the highest reported coefficient of performance to date) when used as a cooling device. 1. A solid-state heat transporting device , comprising:a heat transporting element whose uniformity of contact with one or multiple surfaces is controllable so that various amounts of heat may be transported to and/or from the one or multiple surfaces.2. The device of claim 1 , wherein the heat transporting element comprises an electrocaloric material that absorbs or releases the heat as a function of an electric field applied across the electrocaloric material.3. The device of claim 1 , further comprising an electrode on the heat transporting element claim 1 , wherein the uniformity of contact is controlled using an electrostatic force generated between the one of the multiple surfaces and the heat transporting element when an electrostatic field is applied between the electrode and the one of the multiple surfaces.4. The device of claim 3 , wherein the electrostatic force changes a shape of the heat transporting element.5. The device of claim 1 , wherein the solid-state heat transporting device is conformable to a flat surface or a non-flat surface.6. The device of claim 1 , further comprising an electrode on the heat transporting element claim 1 , wherein the heat transporting element creates or eliminates thermal contact between two of ...

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17-03-2016 дата публикации

Surface Micro-Machined Infrared Sensor Using Highly Temperature Stable Interferometric Absorber

Номер: US20160079306A1
Принадлежит:

A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having a front side surface and a back side surface. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, wherein the thin-film absorber is substantially parallel to the reflector. 1. A method for manufacturing a surface machined infrared sensor package , comprising the steps of:providing a semiconductor substrate having a front side surface and a back side surface;defining a transistor on the substrate front side surface;implanting a reflector on the substrate front side surface;forming a sensor on the substrate front side surface adjacent to the reflector; anddepositing a thin-film absorber upon the sensor,wherein the thin-film absorber is substantially parallel to the reflector with the sensor disposed there between.2. The method of claim 1 , wherein the transistor is a CMOS transistor.3. The method of claim 1 , wherein a distance between the thin-film absorber and the reflector comprises approximately one quarter of a radiation wavelength detected by the sensor.4. The method of claim 1 , wherein the infrared sensor further comprises one of the group of a thermopile infrared sensor claim 1 , a diode-bolometer claim 1 , and a resistive microbolometer.5. The method of claim 4 , wherein the diode-bolometer is a lateral diode-bolometer.6. The method of claim 4 , wherein the diode-bolometer is a vertical diode-bolometer.7. The method of claim 1 , wherein the substrate does not include a substrate recess behind the sensor.8. The method of claim 1 , further comprising the step of releasing the front side surface of the infrared sensor.9. The method of claim 8 , wherein the step of releasing the front side surface of the infrared sensor further ...

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05-03-2020 дата публикации

RESISTIVE ELEMENT ARRAY CIRCUIT, RESISTIVE ELEMENT ARRAY CIRCUIT UNIT, AND INFRARED SENSOR

Номер: US20200072664A1
Принадлежит: TDK Corporation

A resistive element array circuit includes word lines, bit lines, resistive elements, a selector, a differential amplifier, and a ground terminal. The word lines are coupled to a power supply. The resistive elements are each disposed at an intersection of corresponding one of the word lines and corresponding one of the bit lines. The selector is configured to select one word line and one bit line. The differential amplifier includes a positive input terminal configured to be coupled to the selected one of the bit lines which is selected by the selector, a negative input terminal configured to be coupled to non-selected one of the bit lines which is not selected by the selector and to non-selected one of the word lines which is not selected by the selector, an output terminal being coupled to the negative input terminal. The ground terminal is coupled to the positive input terminal. 1. A resistive element array circuit comprising:a plurality of word lines extending in a first direction and arranged side by side in a second direction, and coupled to a power supply;a plurality of bit lines extending in the second direction and arranged side by side in the first direction;a plurality of resistive elements each disposed at an intersection of corresponding one of the word lines and corresponding one of the bit lines, and each coupled to the corresponding one of the word lines and the corresponding one of the bit lines;a selector configured to select one of the word lines and one of the bit lines;a differential amplifier that includes a positive input terminal, a negative input terminal, and an output terminal, the positive input terminal being configured to be coupled to the selected one of the bit lines which is selected by the selector, the negative input terminal being configured to be coupled to non-selected one of the bit lines which is not selected by the selector and to non-selected one of the word lines which is not selected by the selector, the output terminal ...

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12-06-2014 дата публикации

SEMICONDUCTOR CERAMIC AND SEMICONDUCTOR CERAMIC ELEMENT

Номер: US20140159191A1
Автор: Koto Kiyohiro
Принадлежит:

Provided is a semiconductor ceramic element constructed by using a semiconductor ceramic that generates metal-insulator transition at a temperature of actual use and has a sufficient strength to enable easy handling. The semiconductor ceramic element has an element main body having a semiconductor ceramic made of a perovskite-type or pyrochlore-type oxide containing a rare earth element, nickel, and titanium, in which a part of the nickel is present as metal nickel; and a pair of electrodes formed to interpose the element main body therebetween. This semiconductor ceramic element shows a sharp resistance change within a temperature range of actual use, and can be used advantageously as a temperature sensor. 1. A semiconductor ceramic comprising a perovskite or pyrochlore oxide containing a rare earth element , nickel , and titanium , wherein a part of said nickel is present as metal nickel.2. The semiconductor ceramic according to claim 1 , wherein at least a part of said metal nickel is dispersed in the semiconductor ceramic.3. The semiconductor ceramic according to claim 2 , wherein the oxide is a perovskite.4. The semiconductor ceramic according to claim 2 , wherein the oxide is a pyrochlore.5. The semiconductor ceramic according to claim 1 , wherein the oxide is a perovskite.6. The semiconductor ceramic according to claim 1 , wherein the oxide is a pyrochlore.7. A semiconductor ceramic element comprising:{'claim-ref': {'@idref': 'CLM-00006', 'claim 6'}, 'an element main body comprising a semiconductor ceramic according to ; and'}a pair of electrodes disposed to interpose at least a part of said element main body therebetween.8. The semiconductor ceramic element according to claim 7 , which is a temperature sensor adapted to sense a temperature in accordance with a resistance change generated in a temperature range of −25° C. to +85° C.9. A semiconductor ceramic element comprising:{'claim-ref': {'@idref': 'CLM-00005', 'claim 5'}, 'an element main body comprising ...

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22-03-2018 дата публикации

METHOD FOR MANUFACTURING FERROELECTRIC THIN FILM DEVICE

Номер: US20180082839A1
Принадлежит: Sumitomo Chemical Company, Limited

This method for manufacturing a ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate on the lower electrode film; an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; and an upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film. The upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold. 1. A method for manufacturing a ferroelectric thin film device , the method comprising:a lower electrode film formation step of forming a lower electrode film on a substrate;{'sub': 1-x', 'x', '3, 'a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate (typical chemical formula of (KNa)NbO, 0.4≦x≦0.7) on the lower electrode film;'}an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; andan upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film, whereinthe upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold.2. The method for manufacturing a ferroelectric thin film device according to claim 1 , whereinthe predetermined threshold is 1.0 after the rate of ...

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24-03-2016 дата публикации

METHODS TO IMPROVE THE MECHANICAL PERFORMANCE OF ELECTROCALORIC POLYMERS IN ELECTROCALORIC REFRIGERATORS

Номер: US20160087185A1
Автор: CHENG Ailan
Принадлежит:

A cooling device utilizing the polymer composite materials possessing high electrocaloric effect and high elastic modulus are disclosed. Especially methods to enhance mechanical properties and reduce creep of the polymer composites with insulation fibers of high elastic modulus while maintain high electrocaloric effect. 1. A cooling device comprising a refrigerant which includes an electrocaloric (EC) fluoropolymer composite , wherein the EC fluoropolymer composite has an elastic modulus higher than 0.5 GPa.2. The device of claim 1 , wherein the EC fluoropolymer composite comprises one or more EC fluoropolymers having high elastic modulus and insulation fibers which have an aspect ratio higher than 100.3. The device of claim 1 , wherein the EC fluoropolymer composite has an elastic modulus claim 1 , along one direction claim 1 , higher than 0.5 GPa in the temperature range from −10° C. to 50° C.4. The device of claim 1 , wherein the EC fluoropolymer composite comprises one or more EC fluoropolymers and insulating fibers which have elastic modulus higher than 20 GPa and an aspect ratio higher than 100.5. The device of claim 2 , wherein the insulation fiber are any one of glass fibers claim 2 , alumina fibers claim 2 , boron nitride (BN) claim 2 , polyethylene highly oriented fibers (PE) claim 2 , and Kevlar fibers.6. The device of claim 2 , wherein the EC fluoropolymer composite has a volume fraction of the insulation fiber of less than 10 volume percent but higher than 1 volume percent.7. The device of claim 1 , wherein the EC fluoropolymer composite includes an EC fluoropolymer having a dielectric constant higher than 15 at room temperature.8. The device of claim 7 , wherein the EC fluoropolymer has the formula of: P(VDF-R—R) alone or in combination with one or more of P(VDF-R) and/or P(VF-R) claim 7 , wherein VDF is vinylidene fluoride claim 7 , Ris selected from trifluoroethylene (TrFE) and/or tetrafluoroethylene (TFE) claim 7 , Ris selected from ...

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24-03-2016 дата публикации

SILICON SUBSTRATE HAVING FERROELECTRIC FILM ATTACHED THERETO

Номер: US20160087192A1
Принадлежит:

A residual stress in a PZT type ferroelectric film formed on a substrate body by a sol-gel process is −14 MPa to −31 MPa, and the ferroelectric film is crystal oriented in a (100) plane. 1. A ferroelectric film-attached silicon substrate which comprises a PZT type ferroelectric film formed on a substrate body by a sol-gel process , a residual stress of which being −14 MPa to −31 MPa , and the ferroelectric film being crystal oriented in a (100) plane.2. The ferroelectric film-attached silicon substrate according to claim 1 , wherein a thickness of the ferroelectric film is 860 nm or more and 10 claim 1 ,060 nm or less.3. The ferroelectric film-attached silicon substrate according to claim 1 , wherein a diameter of the substrate body is 4 inches or more and 8 inches or less.4. The ferroelectric film-attached silicon substrate according to claim 2 , wherein a diameter of the substrate body is 4 inches or more and 8 inches or less. The present invention relates to a silicon substrate in which a lead zirconate titanate (PZT) type ferroelectric film has been formed on a substrate body made of silicon by a sol-gel process. Incidentally, the present international application claims a priority of Japanese Patent Application No. 100967 (JP 2013-100967) filed on May 13, 2013, and the whole content of JP Application No. 2013-100967 is incorporated into this International Application by reference.A silicon substrate in which a ferroelectric film has been formed on this kind of substrate body by a sol-gel process has heretofore been used for a composite electronic component such as a thin film capacitor, a capacitor, IPD (Integrated Passive Device), etc. In the method for forming the ferroelectric film on the above-mentioned conventional substrate body by the sol-gel process, however, there are problems that shrinkage of the film is generated at the time of forming the ferroelectric film on the substrate body, and the silicon substrate is markedly warped after formation of the ...

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12-03-2020 дата публикации

MID AND FAR-INFRARED NANOCRYSTALS BASED PHOTODETECTORS WITH ENHANCED PERFORMANCES

Номер: US20200083469A1
Автор: LHUILLIER Emmanuel
Принадлежит:

Disclosed is a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein the metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and the chalcogen is selected from S, Se, Te or a mixture thereof; wherein the multiple inorganic ligands includes at least one inorganic ligands are selected from S, HS, Se, Te, OH, BF, PF, Cl, Br, I, AsSe, SbS, SbTe, SbSe, AsSor a mixture thereof; and wherein the absorption of the C—H bonds of the organic ligands relative to the absorption of metal chalcogenide nanocrystals is lower than 50%, preferably lower than 20%. 114-. (canceled)15. A plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands;wherein said metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and said chalcogen is selected from S, Se, Te or a mixture thereof;{'sup': 2−', '−', '2−', '2−', '−', '−', '−', '−', '−', '−, 'sub': 4', '6', '2', '3', '2', '3', '2', '3', '2', '3', '2', '3, 'wherein said multiple inorganic ligands comprise at least one inorganic ligand selected from S, HS, Se, Te, OH, BF, PF, Cl, Br, I, AsSe, SbS, SbTe, SbSe, AsSor a mixture thereof.'}16. The plurality of metal chalcogenide nanocrystals according to claim 15 , wherein the optical absorption of the organic ligands relative to the optical absorption of coated metal chalcogenide nanocrystals is lower than 50%.17. The plurality of metal chalcogenide nanocrystals according to claim 15 , wherein said plurality of metal chalcogenide nanocrystals exhibits an optical absorption feature in a range from 3 μm to 50 μm and a carrier mobility not less than 1 cmVs.18. The plurality of metal chalcogenide nanocrystals according to claim 15 , wherein said metal is selected from Hg or a mixture of Hg and at least one of Pb claim 15 , Sn claim 15 , Cd claim 15 , Bi claim 15 , Sb; and said chalcogen is selected from S claim 15 , Se claim 15 , Te or a mixture thereof; provided that said metal ...

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19-03-2020 дата публикации

CROSSLINKABLE COMPOSITIONS BASED ON ELECTROACTIVE FLUORINATED COPOLYMERS

Номер: US20200087526A1
Принадлежит: Arkema France

The invention relates to crosslinkable compositions based on electroactive fluorinated copolymers, to crosslinked films obtained from such compositions and also to a process for preparing these films. The invention also relates to the use of said films as a dielectric layer in various (opto)electronic devices: piezoelectric, ferroelectric or pyroelectric devices. 1. Crosslinkable composition consisting of:a) at least one electroactive fluorinated copolymer,b) at least one (meth)acrylic monomer which is bifunctional or polyfunctional in terms of reactive double bonds,c) at least one radical polymerization initiator,d) at least one organic solvent, ande) at least one additive chosen from the list: (meth)acrylic monomers which are monofunctional in terms of reactive double bonds, agents which modify surface tension, rheology, ageing resistance, adhesion or colour, fillers and nanofillers.2. Composition according to claim 1 , in which said electroactive fluorinated copolymer is a copolymer of general formula P(VDF-TrFE) claim 1 , in which VDF represents units derived from vinylidene fluoride and TrFE represents units derived from trifluoroethylene claim 1 , the VDF:TrFE molar ratio in the polymer ranging from 50:50 to 85:15.3. Composition according to claim 1 , in which said electroactive fluorinated copolymer is a terpolymer of general formula P(VDF-TrFE-X) claim 1 , in which VDF represents units derived from vinylidene fluoride claim 1 , TrFE represents units derived from trifluoroethylene claim 1 , and X represents units derived from a third monomer bearing at least one fluorine atom.4. Composition according to claim 3 , in which the molar proportion of X units in the polymer is from 0.1% to 15%.5. Composition according to claim 1 , in which said (meth)acrylic monomer which is bifunctional or polyfunctional in terms of reactive double bonds is a monomer or an oligomer containing at least two reactive double bonds of (meth)acrylic type or a bifunctional or ...

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07-04-2016 дата публикации

PYROELECTRIC MATERIAL, MANUFACTURING METHOD OF PYROELECTRIC MATERIAL, PYROELECTRIC ELEMENT, MANUFACTURING METHOD OF PYROELECTRIC ELEMENT, THERMOELECTRIC CONVERSION ELEMENT, MANUFACTURING METHOD OF THERMOELECTRIC CONVERSION ELEMENT, THERMAL PHOTODETECTOR, MANUFACTURING METHOD OF THERMAL PHOTODETECTOR, AND ELECTRONIC INSTRUMENT

Номер: US20160097682A1
Принадлежит:

A pyroelectric material is constituted with an oxide containing iron, manganese, bismuth, and lanthanum, in which a ratio of the number of the manganese atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of titanium atoms is equal to or greater than 1.0 at % and equal to or less than 2.0 at %, and a ratio of the number of the titanium atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of the titanium atoms is equal to or greater than 0 at % and equal to or less than 4.0 at %. 1. A pyroelectric material comprising an oxide containing iron , manganese , bismuth , and lanthanum ,wherein a ratio of the number of the manganese atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of titanium atoms is equal to or greater than 1.0 at % and equal to or less than 2.0 at %, anda ratio of the number of the titanium atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of the titanium atoms is equal to or greater than 0 at % and equal to or less than 4.0 at %.2. The pyroelectric material according to claim 1 ,wherein a ratio of the number of the lanthanum atoms to the sum of the number of the bismuth atoms and the number of the lanthanum atoms is equal to or greater than 10 at % and equal to or less than 20 at %.3. A manufacturing method of a pyroelectric material claim 1 , comprising heating a solution obtained by dissolving fatty acid metal salts in an organic solvent so as to manufacture a pyroelectric material constituted with an oxide containing iron claim 1 , manganese claim 1 , bismuth claim 1 , and lanthanum claim 1 ,wherein in the pyroelectric material, a ratio of the number of the manganese atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of titanium atoms is equal to or greater than 1.0 at % and equal to or less than 2.0 at %, and ...

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16-04-2015 дата публикации

Thermoelectric conversion element, thermoelectric conversion system and manufacturing method of thermoelectric conversion element

Номер: US20150101648A1
Принадлежит: NEC Corp

A thermoelectric conversion element includes a cable. The cable includes a first member extended in the axis direction of the cable, and a second member extended in the axis direction to cover at least a part of the outer face of the first member. One of the first and second members is a magnetic body. The other of the first and second members is a conductive body formed of material exhibiting a spin orbit coupling.

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16-04-2015 дата публикации

THERMAL POWER CELL AND APPARATUS BASED THEREON

Номер: US20150102702A1
Принадлежит:

Apparatus () comprising a device () with 210011030. Apparatus () according to claim 1 , characterized in that it further comprises a first inductor (L) which is coupled to said device () so as to form a first oscillator ().3100204022. Apparatus () according to claim 1 , wherein said electric oscillator circuitry () comprises a second oscillator () which comprises a capacitor (C) and a second inductor (L).410030403040. Apparatus () according to claim 3 , wherein said first oscillator () and said second oscillator () are coupled by means of conductive connections so that these two oscillators ( claim 3 , ) can be caused to jointly oscillate.51003040. Apparatus () according to claim 3 , wherein said first oscillator () and said second oscillator () are arranged in series.610030140212. Apparatus () according to claim 3 , wherein said first oscillator () has a first resonance frequency (f) and said second oscillator () has a second resonance frequency (f) claim 3 , and wherein said first resonance frequency (f) and said second resonance frequency (f) are different.710012. Apparatus () according to claim 6 , wherein the first resonance frequency (f) and the second resonance frequency (f) are both in the range between 5 kHz and 500 kHz.810012. Apparatus () according to claim 6 , wherein the difference of the resonance frequencies (f claim 6 , f) is between 5% and 0.1%.91003040. Apparatus () according to claim 3 , wherein said first oscillator () and said second oscillator () are caused to oscillate with a beat frequency between 10 and 100 times per second.1010013040. Apparatus () according to claim 3 , further comprising a transistor (T) being arranged between said first oscillator () and said second oscillator ().1110013040. Apparatus () according to claim 10 , wherein said transistor (T) can be switched so that current flows from said first oscillator () into said second oscillator ().12100133331. Apparatus () according to claim 10 , further comprising a supercapacitor ( ...

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12-05-2022 дата публикации

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH ELECTRIC POWER GENERATION FUNCTION

Номер: US20220149022A1
Принадлежит:

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an electric power generation function, which can prevent the circuit board from increasing in size. 1. A semiconductor integrated circuit device with an electric power generation function , comprising a semiconductor integrated circuit device and a thermoelectric element to convert thermal energy released from the semiconductor integrated circuit device into electrical energy ,wherein the semiconductor integrated circuit device includes a package to house a semiconductor integrated circuit chip,wherein the semiconductor integrated circuit chip has a lower surface opposing a circuit board and an upper surface opposing the lower surface,wherein the thermoelectric element includesa casing unit having a housing unit,a first electrode unit provided inside the housing unit,a second electrode unit provided inside the housing unit, separated from and opposing the first electrode unit in a first direction, and having a work function different from that of the first electrode unit, anda middle unit provided between the first electrode unit and the second electrode unit, and including a nanoparticle having a work function between the work function of the first electrode unit and the work function of the second electrode unit, in the housing unit, andwherein the casing unit is provided inside the semiconductor integrated circuit chip.2. The semiconductor integrated circuit device with the electric power generation function according to claim 1 , a first bonding wire, electrically connected with the first electrode unit, and leading the first electrode unit to outside of the housing unit, and', 'a second bonding wire, electrically connected with the second electrode unit, and leading the second electrode unit to outside of the housing unit, and', 'wherein a first electrical contact between the first electrode unit and the first bonding wire and a second electrical contact between the second electrode ...

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14-04-2016 дата публикации

Pyroelectric Sandwich Thermal Energy Harvesters

Номер: US20160104831A1
Принадлежит:

Systems, methods, and devices of the various embodiments provide pyroelectric sandwich thermal energy harvesters. In the various embodiment pyroelectric sandwich thermal energy harvesters, generated electrical energy may be stored in a super-capacitor/battery as soon as it is generated. The various embodiment pyroelectric sandwich thermal energy harvesters may harvest electrical energy from any environment where temperature variations occur. The various embodiment pyroelectric sandwich thermal energy harvesters may be power sources for space equipment and vehicles in space and/or on earth, as well as the for wireless sensor networks, such as health monitoring systems of oil pipes, aircraft, bridges, and buildings. 1. A pyroelectric sandwich thermal energy harvester , comprising:two electrode layers; anda pyroelectric layer sandwiched between the two electrode layers.2. The energy harvester of claim 1 , wherein the pyroelectric layer includes one or more of lithium tantalate claim 1 , zinc oxide claim 1 , lithium niobate claim 1 , and lead zirconium titanate.3. The energy harvester of claim 1 , wherein the pyroelectric layer is one of a polycrystalline ceramic claim 1 , a single crystal material claim 1 , an electroactive polymers claim 1 , and a nanocomposite.4. The energy harvester of claim 1 , further comprising two protective layers each on an outer layer of the two electrode layers claim 1 , respectively.5. The energy harvester of claim 4 , wherein a thermal expansion coefficient of the two protective layers is equal to claim 4 , or larger than claim 4 , a thermal expansion coefficient of the pyroelectric layer.6. A pyroelectric power generator claim 4 , comprising:a substrate; and two electrode layers; and', 'a pyroelectric layer sandwiched between the two electrode layers., 'at least one pyroelectric sandwich thermal energy harvester imbedded in the substrate, the pyroelectric sandwich thermal energy harvester comprising7. The pyroelectric power generator of ...

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03-07-2014 дата публикации

THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION METHOD

Номер: US20140182645A1
Принадлежит:

Provided is a thermoelectric conversion element capable of converting both a temperature gradient in an in-plane direction and a temperature gradient in a direction perpendicular to plane into electric power at the same time. The thermoelectric conversion element includes: a substrate; a magnetic film provided on the substrate and formed of a polycrystalline magnetic insulator material that is magnetizable in a predetermined direction having a component parallel to a film surface; and electrodes provided to the magnetic film and made of a material having a spin orbit interaction. The thermoelectric conversion element is configured to be capable of outputting a temperature gradient perpendicular to a surface of the magnetic film as a potential difference in a surface of one of the electrodes and outputting a temperature gradient parallel to the surface of the magnetic film as a potential difference between the electrodes. 1. A thermoelectric conversion element comprising:a magnetic film provided on a substrate and formed of a magnetic substance that is magnetizable in a predetermined direction having a component parallel to a film surface; anda plurality of electrodes provided to the magnetic film and made of a material having a spin orbit interaction, the plurality of electrodes being arranged along the predetermined direction,wherein the thermoelectric conversion element is configured to be capable of outputting a temperature gradient perpendicular to a surface of the magnetic film as a potential difference in any of surfaces of the plurality of electrodes and outputting a temperature gradient parallel to the surface of the magnetic film as a potential difference in any of the surfaces of the plurality of electrodes.2. A thermoelectric conversion element according to claim 1 , wherein the thermoelectric conversion element is configured so that claim 1 , when the temperature gradient is applied to the magnetic film claim 1 , a spin current flowing from the magnetic ...

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21-04-2016 дата публикации

Thermal oscillator

Номер: US20160112050A1
Принадлежит: International Business Machines Corp

A thermal oscillator ( 10 ) for creating an oscillating heat flux from a stationary spatial thermal gradient between a warm reservoir ( 20 ) and a cold reservoir ( 30 ) is provided. The thermal oscillator ( 10 ) includes a thermal conductor ( 11 ) which is connectable to the warm reservoir ( 20 ) or to the cold reservoir ( 30 ) and configured to conduct a heat flux from the warm reservoir ( 20 ) towards the cold reservoir ( 30 ), and a thermal switch ( 12 ) coupled to the thermal conductor ( 11 ) for receiving the heat flux and having a certain difference between two states (S 1 , S 2 ) of thermal conductance for providing thermal relaxation oscillations such that the oscillating heat flux is created from the received heat flux.

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26-04-2018 дата публикации

COMPOSITE THERMOELECTRIC MATERIAL AND ITS MANUFACTURING METHOD

Номер: US20180112081A1
Принадлежит:

A composite thermoelectric material includes: a thermoelectric material of an intermetallic compound series; and a film that is coated over the whole or a part of the surface of the thermoelectric material and contains aluminum phosphate (AlPO) as a main component. Such a composite thermoelectric material is obtained by: applying a coating liquid obtained by dispersing or dissolving aluminum phosphate (AlPO) into a solvent over the surface of a thermoelectric material; drying the coating liquid and obtaining a precursor film; and firing the thermoelectric material over which the precursor film is formed. 1. A composite thermoelectric material comprising:a thermoelectric material of an intermetallic compound series; and{'sub': '4', 'a film that is coated over the whole or a part of the surface of the thermoelectric material and contains aluminum phosphate (AlPO) as a main component.'}2. The composite thermoelectric material according to claim 1 , wherein the film is coated at least to a region where a temperature rises to 500° C. or more during usage over the surface of the thermoelectric material.3. The composite thermoelectric material according to claim 1 , wherein a content of the aluminum phosphate contained in the film is 80 wt % or more.4. The composite thermoelectric material according to claim 1 , wherein the thermoelectric material contains an easily-volatilizable element and/or an easily-oxidizable element.5. The composite thermoelectric material according to claim 1 , wherein the thermoelectric material contains at least one element selected from the group consisting of Sb claim 1 , Mg claim 1 , Ti claim 1 , Hf claim 1 , Zr claim 1 , Li claim 1 , Na claim 1 , Ca claim 1 , P claim 1 , S claim 1 , K claim 1 , Zn claim 1 , Se claim 1 , Sr claim 1 , Cd claim 1 , Te claim 1 , Eu claim 1 , Yb claim 1 , Ba claim 1 , Al claim 1 , and Mn.6. The composite thermoelectric material according to claim 1 , wherein the thermoelectric material includes an R(Fe claim 1 , ...

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09-04-2020 дата публикации

PYROELECTRIC DETECTION DEVICE WITH RIGID MEMBRANE

Номер: US20200109992A1

Pyroelectric detection device, including at least: 1. A pyroelectric detection device , including at least:a substrate;a membrane arranged on the substrate;a pyroelectric detection element arranged on the membrane or forming at least one part of the membrane, and including at least one portion of pyroelectric material arranged between first and second electrodes;a cavity passing through the substrate, emerging opposite a part of the membrane which forms a bottom wall of the cavity, and including side edges formed by the substrate;an element for stiffening the membrane arranged in the cavity, partially filling the cavity, made integral with the side edges of the cavity at at least two distinct anchoring regions, and arranged against the membrane.2. The pyroelectric detection device according to claim 1 , in which the stiffening element is formed at least by one or more portions of the substrate.3. The pyroelectric detection device according to claim 1 , in which the stiffening element comprises several distinct portions of elongated shape and extending into the cavity between the side edges along one or more directions.4. The pyroelectric detection device according to claim 1 , in which a ratio between the surface area of the part of the membrane forming the bottom wall of the cavity which is in contact with the stiffening element and the total surface area of the part of the membrane forming the bottom wall of the cavity is comprised between around 0.05 and 0.6.5. The pyroelectric detection device according to claim 1 , in which the pyroelectric detection element is arranged on the membrane which comprises at least one layer of material distinct from the pyroelectric detection element.6. The pyroelectric detection device according to claim 5 , in which the layer of material of the membrane comprises at least one of the following materials: SiO claim 5 , Si claim 5 , SiN.7. The pyroelectric detection device according to claim 1 , in which the membrane forms part of ...

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05-05-2016 дата публикации

VECTOR LIGHT SENSOR AND ARRAY THEREOF

Номер: US20160123801A1
Автор: Bahreyni Behraad
Принадлежит:

A vector light sensor (VLS) includes a substrate and a sensor structure. The substrate includes a major surface. The sensor structure includes a pyramid structure, light-sensitive areas, and electrical contacts. The pyramid structure forms at least a portion of a body of the sensor structure and has predefined angles between the major surface of the substrate and a plurality of sidewalls of the pyramid. The light-sensitive areas are formed on two or more of the plurality of sidewalls of the pyramid structure. The electrical contacts are electrically coupled to the light-sensitive areas. Information about the information about intensity and direction of an incident light beam can be extracted by comparing signals from two or more of the light-sensitive areas. 1. A vector light sensor (VLS) comprising:a substrate having a major surface; and a pyramid structure forming at least a portion of a body of the sensor structure, the pyramid structure having predefined angles between the major surface of the substrate and a plurality of sidewalls of the pyramid structure,', 'light-sensitive areas formed on two or more of the plurality of sidewalls of the pyramid structure, and', 'electrical contacts electrically coupled to the light-sensitive areas., 'a sensor structure comprising2. The VLS of claim 1 , wherein the pyramid structure is and inverted pyramid structure etched into the substrate.3. The VLS of claim 1 , wherein at least two of the plurality of sidewalls meet at a point.4. The VLS of claim 1 , further comprising:a flat surface on top of the pyramid structure, wherein the flat surface is substantially parallel to the major surface of the substrate.5. The VLS of claim 1 , wherein the pyramid has a polygon base.6. The VLS of claim 5 , wherein the polygon base is a square base.7. The VLS of claim 5 , wherein the polygon base is a triangular base.8. The VLS of claim 1 , wherein the light-sensitive areas comprise photoconductive materials.9. The VLS of claim 1 , wherein ...

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05-05-2016 дата публикации

VECTOR LIGHT SENSOR AND ARRAY THEREOF

Номер: US20160123803A1
Автор: Bahreyni Behraad
Принадлежит:

A vector light sensor (VLS) includes a substrate and a sensor structure. The substrate includes a major surface. The sensor structure includes a pyramid structure, light-sensitive areas, and electrical contacts. The pyramid structure forms at least a portion of a body of the sensor structure and has predefined angles between the major surface of the substrate and a plurality of sidewalls of the pyramid. The light-sensitive areas are formed on two or more of the plurality of sidewalls of the pyramid structure. The electrical contacts are electrically coupled to the light-sensitive areas. Information about the intensity and direction of an incident light beam can be extracted by comparing signals from two or more of the light-sensitive areas. One or two dimensional arrays of VLS may be fabricated and used, for example, as an image sensor. 1. A vector light sensor (VLS) comprising:a substrate having a major surface; and a pyramid structure forming at least a portion of a body of the sensor structure, the pyramid structure having predefined angles between the major surface of the substrate and a plurality of sidewalls of the pyramid structure,', 'light-sensitive areas formed on two or more of the plurality of sidewalls of the pyramid structure, and', 'electrical contacts electrically coupled to the light-sensitive areas., 'a sensor structure comprising2. The VLS of claim 1 , wherein the pyramid structure is an inverted pyramid structure etched into the substrate.3. The VLS of claim 1 , wherein at least two of the plurality of sidewalls meet at a point.4. The VLS of claim 1 , wherein at least two of the plurality of sidewalls meet at a line.5. The VLS of claim 1 , further comprising:a flat surface on top of the pyramid structure, wherein the flat surface is substantially parallel to the major surface of the substrate.6. The VLS of claim 1 , wherein the pyramid has a polygon base.7. The VLS of claim 6 , wherein the polygon base is a square base.8. The VLS of claim 6 , ...

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31-07-2014 дата публикации

THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE USING SAME

Номер: US20140209142A1
Принадлежит:

Provided is a thermoelectric conversion element having a greater Seebeck coefficient (S) than the conventional ones. In a thermoelectric conversion element: a nonmagnetic Heusler alloy film (), a ferromagnetic Heusler alloy film () and a nonmagnetic layer () are stacked in the named order; a pair of electrodes () are disposed for deriving, in accordance with a temperature gradient occurring in parallel to the direction of magnetization () of the ferromagnetic Heusler alloy film, an electromotive force occurring perpendicularly to the direction of magnetization of the ferromagnetic Heusler alloy film; a pair of electrodes () are disposed for deriving an electromotive force occurring in parallel to the direction of magnetization of the ferromagnetic Heusler alloy film; and the electromotive forces occurring due to an ordinary Seebeck effect and a spin Seebeck effect are simultaneously derived. 1. A thermoelectric conversion element in which a first non-magnetic film , a ferromagnetic film , and a second non-magnetic film are stacked in this order over a substrate , comprisinga first electrode pair formed over the second non-magnetic film for deriving a first electromotive force generated in a direction perpendicular to the direction of magnetization of the ferromagnetic film due to a temperature gradient parallel to the direction of magnetization of the ferromagnetic film; anda second electrode pair for deriving a second electromotive force generated in a direction parallel to the direction of magnetization of the ferromagnetic film.2. The thermoelectric conversion element according to claim 1 ,wherein the first non-magnetic film is a non-magnetic Heusler alloy film and the ferromagnetic film is a ferromagnetic Heusler alloy film.3. The thermoelectric conversion element according to claim 1 ,wherein the second non-magnetic film is in contact only with the first electrode pair.4. The thermoelectric conversion element according to claim 1 ,wherein an anti-ferromagnetic ...

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25-08-2022 дата публикации

PHOTOSENSOR, SENSOR UNIT, AND OBJECT DETECTION APPARATUS USING PHOTOSENSOR

Номер: US20220271211A1
Принадлежит:

A photothermal converter using a wavelength selective perfect absorber made of a low-loss metal material or dielectric and a heat detection sensor are combined to develop a sensor that efficiently converts light of a specific wavelength into heat and further electrically detects the heat. Here, since the wavelength selective perfect absorber of the present invention has a periodic structure, it has high directivity, and can also be used as a small motion sensor or a watching sensor using detection of thermal radiation. In addition, it can also be used as a high-precision small position sensor by being combined with a laser light source matching the resonance wavelength of the sensor. 1. A photosensor which is a sensor capable of detecting light , the photosensor comprising:an absorber having a surface formed of at least one of a metal and a dielectric and configured to absorb incident light; andmeans for detecting heat generated by absorption of light by the absorber, wherein the absorber absorbs light that is perpendicularly incident on a surface of the absorber and has a same wavelength as a resonance wavelength of the absorber,the surface of the absorber includes a plurality of raised portions that are raised,the surface of the absorber has a periodic structure in which the plurality of raised portions are arranged at a predetermined period such that a one-dimensional or two-dimensional lattice pattern is formed,in the one-dimensional lattice pattern,each of the plurality of raised portions is formed in an elongated manner and is arranged at a first period along a predetermined direction so as to be parallel to each other, widths of the raised portions are 0.3 to 0.7 times the first period, thicknesses of the raised portions are 0.05 to 0.2 times the first period, in the two-dimensional lattice pattern,each of the plurality of raised portions is arranged at a second period so as to be set out in a grid,widths of the raised portions are 0.3 to 0.7 times the second ...

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27-05-2021 дата публикации

SEMICONDUCTOR DEVICE AND ELECTRONIC COMPONENT

Номер: US20210159252A1

A semiconductor device capable of retaining a signal sensed by a sensor element is provided. The semiconductor device includes a sensor element, a first transistor, a second transistor, and a third transistor. One electrode of the sensor element is electrically connected to a first gate. The first gate is electrically connected to one of a source and a drain of the third transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. A semiconductor layer includes a metal oxide. 1. A semiconductor device comprising a sensor element , a first transistor , a second transistor , and a third transistor ,wherein the sensor element comprises a pair of electrodes,wherein the first transistor comprises a first gate and a second gate facing the first gate with a semiconductor layer therebetween,wherein one electrode of the sensor element is electrically connected to the first gate,wherein the first gate is electrically connected to one of a source and a drain of the third transistor,wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor, andwherein the semiconductor layer comprises a metal oxide.2. The semiconductor device according to claim 1 ,wherein the sensor element is a photoelectric conversion element, a piezoelectric element, or a heat sensitive element.3. A semiconductor device comprising a photodiode claim 1 , a first transistor claim 1 , and a second transistor claim 1 ,wherein the first transistor comprises a first gate and a second gate facing the first gate with a semiconductor layer therebetween,wherein one electrode of the photodiode is electrically connected to the first gate,wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor,wherein the other of the source and the drain of the first transistor is electrically connected to the other electrode of the photodiode, ...

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12-05-2016 дата публикации

THERMOELECTRIC GENERATION STRUCTURE FOR VEHICLE

Номер: US20160133818A1
Принадлежит:

A thermoelectric generation structure for a vehicle is provided. The structure includes an exhaust manifold into which exhaust gas is introduced and a cover that is disposed within the exhaust manifold and provided with a cooling water microchannel to perform cooling. A magnetic thermoelectric material is mounted between the cover and the exhaust manifold to generate electricity. Additionally, the magnetic thermoelectric material having an adjustable size and shape is used in the thermoelectric generation device by being mounted in the exhaust manifold of the vehicle to minimize the weight and volume to improve the marketability. The electricity is generated by the magnetic thermoelectric material using the spin seebeck phenomenon to improve the fuel efficiency. 1. A thermoelectric generation structure for a vehicle , comprising:an exhaust manifold into which exhaust gas is introduced;a cover disposed within the exhaust manifold and provided with a cooling water microchannel to perform cooling; anda magnetic thermoelectric material mounted between the cover and the exhaust manifold to generate electricity.2. The thermoelectric generation structure for a vehicle according to claim 1 , wherein the magnetic thermoelectric material and the cover are coupled by soldering.3. The thermoelectric generation structure for a vehicle according to claim 2 , wherein the magnetic thermoelectric material includes an electrode layer configured to generate electricity by being connected to a power supply unit of the vehicle.4. The thermoelectric generation structure for a vehicle according to claim 3 , wherein the electrode layer is mounted over the magnetic thermoelectric material.5. The thermoelectric generation structure for a vehicle according to claim 3 , wherein the electrode layer is mounted under the magnetic thermoelectric material.6. The thermoelectric generation structure for a vehicle according to claim 3 , wherein the electrode layer is mounted over the magnetic ...

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10-05-2018 дата публикации

Thermal Emitter for Energy Conversion Technical Field

Номер: US20180131310A1
Принадлежит:

A thermal emitter including a substrate and a grating arranged atop the substrate, the grating includes a plurality of equidistant structures having a cross-section with a trapezoid shape. Material of the substrate and the grating converts incoming heat into radiation. 1. A thermal emitter , comprising:a substrate; anda grating arranged atop the substrate, the grating includes a plurality of equidistant structures having a cross-section with a trapezoid shape, wherein material of the substrate and the grating converts incoming heat into radiation.2. The thermal emitter of claim 1 , wherein the material includes tungsten.3. The thermal emitter of claim 1 , further comprising:a dielectric layer arranged between the grating and the substrate.4. The thermal emitter of claim 3 , wherein the dielectric layer includes silicon dioxide.5. The thermal emitter of claim 1 , wherein geometric parameters of the structure are selected to excite multiple gap plasmon modes.6. The thermal emitter of claim 5 , wherein the geometric parameters includes one or combination of periodicity of the grating claim 5 , height of the grating claim 5 , and dimensions of the trapezoid shape.7. The thermal emitter of claim 1 , wherein the trapezoid shape has two parallel sides including a bottom side proximate to the substrate and a top side opposite to the bottom side claim 1 , wherein the width of the bottom side is greater than the width of the upper side.8. The thermal emitter of claim 7 , wherein the width of the bottom side is at least ten times greater than the width of the top side.9. The thermal emitter of claim 1 , wherein the trapezoid shape forms a rectangular trapezoid.10. The thermal emitter of claim 1 , wherein the equidistant structures in the grating are separated by grooves of triangular profile.11. The thermal emitter of claim 1 , wherein the equidistant structures in the grating are separated by grooves claim 1 , wherein the grooves have a trapezoid profile with two parallel ...

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03-06-2021 дата публикации

ELECTROCALORIC HEAT TRANSFER SYSTEM

Номер: US20210164705A1
Принадлежит:

A method of making an electrocaloric article is disclosed. The method includes mounting a supported electrocaloric film to a frame. The supported electrocaloric film includes an electrocaloric film and a first support film disposed on a first side of the electrocaloric film. An active area of the electrocaloric film is provided, which is not covered by the first support film on the first side of the electrocaloric film. Electrical connections are provided to electrodes disposed on opposing sides of the electrocaloric film in the active area. 1. A method of making an electrocaloric article , comprisingmounting a supported electrocaloric film to a frame, said supported electrocaloric film comprising an electrocaloric film and a first support film disposed on a first side of the electrocaloric film;providing an active area of the electrocaloric film not covered by the first support film on the first side of the electrocaloric film; andproviding electrical connections to electrodes disposed on opposing sides of the electrocaloric film in the active area.2. The method of claim 1 , wherein providing the active area of the electrocaloric film includes removing the first support film from the active area of the electrocaloric film.3. The method of claim 2 , further comprising removing the first support film from the electrocaloric film outside of the active area.4. The method of claim 2 , wherein the first support film is left in place at a peripheral portion of the electrocaloric film after attachment to the frame.5. The method of claim 1 , including comprising disposing a first of said electrodes on a surface of the first support film claim 1 , disposing said surface of the first support film on the active area of the electrocaloric film claim 1 , transferring the first electrode from the first support to the active area of the electrocaloric film claim 1 , and removing the first support film from the active area of the electrocaloric film.6. The method of claim 1 , ...

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17-05-2018 дата публикации

FINGERPRINT OR PALMPRINT SENSOR

Номер: US20180137325A1
Принадлежит:

The invention relates to a skin print sensor () comprising, on a supporting substrate, a plurality of elementary acquisition cells (), each of which includes: a reading node (SN); a first photoelectric or pyroelectric conversion element (PYR) having a first electrode that is connected to the reading node (SN) as well as a second electrode that is connected to a control node (CMD) of the cell; and a third electrode (EL) that is connected to the reading node (SN), is coated with a dielectric layer and is designed to form a capacitance along with the skin of a user; in each cell of said sensor, the control node (CMD) is designed to receive a control signal that initiates reading of a value on the reading node (SN), said value representing the capacitance formed between the third electrode (EL) and the user's skin. 1. A print sensor comprising , on a support substrate , a plurality of elementary acquisition cells , each cell comprising:a sense node;a first photoelectric or pyroelectric conversion element having a first electrode connected to the sense node and a second electrode connected to a control node of the cell; anda third electrode connected to the sense node, the third electrode being coated with a dielectric layer and being intended to form a capacitor with a user's skin,wherein, in each cell, the control is capable of receiving a control signal enabling to implement the reading out, from the sense node, of a value representative of the capacitance formed between the third electrode and the user's skin.2. The sensor of claim 1 , wherein claim 1 , in each cell claim 1 , the first element is a photoelectric conversion element.3. The sensor of claim 2 , wherein claim 2 , in each cell claim 2 , the first element is a photodiode having its anode connected to the control node and having its cathode connected to the sense node.4. The sensor of claim 2 , wherein each cell further comprises a pyroelectric conversion element connected between the control node and the ...

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17-05-2018 дата публикации

TECHNIQUES FOR TRANSFERRING THERMAL ENERGY STORED IN PHASE CHANGE MATERIAL

Номер: US20180138387A1
Принадлежит: Intel Corporation

Various embodiments are generally directed to an apparatus, method and other techniques to receive thermal energy from a source, convert phase change material () from an initial state to a secondary state in response to absorption of the thermal energy, and transfer the thermal energy from the phase change material () to a thermoelectric component (). In addition, various embodiments may include collecting, conducting and converting the thermal energy into electrical energy for use in powering one or more electronic components. 1. An apparatus , comprising:an enclosure defining an enclosed cavity;a phase change material disposed within the cavity, the phase change material operative to absorb thermal energy and change from an initial state of matter to a secondary state of matter in response to absorption of the thermal energy; anda thermal conductive material thermally coupled with the phase change material, the thermal conductive material operative to transfer the thermal energy from the phase change material to a thermoelectric component.2. The apparatus of claim 1 , the thermoelectric component to convert the thermal energy into electrical energy and either store the electrical energy in a battery component or provide the electrical energy to power at least one component.3. The apparatus of claim 1 , comprising:a printed circuit board including one or more components coupled by one or more traces, the one or more traces comprised of the thermal conductive material.4. The apparatus of claim 3 , the one or more components comprising at least one of a processing component claim 3 , a memory component claim 3 , a battery component claim 3 , and the thermoelectric component.5. The apparatus of claim 3 , the printed circuit board located within the cavity and at least a portion of the one or more components surrounded by the phase change material claim 3 , the phase change material operative to absorb thermal energy generated by the one or more components.6. The ...

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17-05-2018 дата публикации

THERMOELECTRIC MATERIAL STRUCTURE

Номер: US20180138388A1
Автор: JUANG Zhen-Yu, WANG Ho-Wei
Принадлежит:

A thermoelectric material structure includes a substrate, at least one spacing layer, and at least one two-dimensional (2D) material layer. The substrate has a surface. The 2D material layer and the spacing layer are overlapped and disposed on the surface of the substrate. The thermal conductivity of the 2D material layer along the direction perpendicular to the surface of the substrate is less than 10 W/mK. 1. A thermoelectric material structure , comprising:a substrate having a surface;at least a spacing layer, andat least a two-dimensional (2D) material layer, wherein the 2D material layer and the spacing layer are overlapped and disposed on the surface of the substrate, and a thermal conductivity of the 2D material layer along the direction perpendicular to the surface of the substrate is less than 10 W/mK.2. The thermoelectric material structure of claim 1 , wherein the spacing layer or the 2D material layer comprises an electric conductive material.3. The thermoelectric material structure of claim 1 , wherein the spacing layer is a layer made of a 2D material claim 1 , or a layer made of nanoparticles or nanostructures.4. The thermoelectric material structure of claim 1 , wherein the spacing layer is made of graphene claim 1 , reduced graphene oxide claim 1 , carbon-based and boron-based materials claim 1 , chalcogenides claim 1 , phosphorene claim 1 , silicene claim 1 , 2D materials claim 1 , thermoelectric materials claim 1 , C60 cluster nanoparticles claim 1 , conductive nanoparticles claim 1 , conductive nanocomposite particles claim 1 , or combinations thereof.5. The thermoelectric material structure of claim 4 , wherein the conductive nanoparticles comprise metal nanoparticles claim 4 , alloy nanoparticles claim 4 , metal oxide nanoparticles claim 4 , core-shell nanoparticles claim 4 , or semiconductor conductive nanoparticles.6. The thermoelectric material structure of claim 5 , wherein the core-shell nanoparticle has a metal core covered by an oxide ...

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18-05-2017 дата публикации

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20170141291A1

A method of manufacturing an electronic device including a film, including the steps of forming at least one layer of a solution including a solvent and a compound including a polymer selected from the group including poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)), poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (P(VDF-TrFE-CTFE)) and a mixture of these compounds, the molecular rate of chlorine in the copolymer being greater than or equal to 3%; and irradiating at least the layer with pulses of at least one ultraviolet radiation. 1. A method of manufacturing an electronic device comprising a film , comprising the steps of:forming at least one layer of a solution comprising a solvent and a compound comprising a polymer selected from the group comprising poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)), poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoro-ethylene) (P(VDF-TrFE-CTFE)), and a mixture of these compounds, the molecular rate of chlorine in the copolymer being greater than or equal to 3%; andirradiating at least the layer with pulses of at least one ultraviolet radiation.2. The method of claim 1 , wherein the ultraviolet radiation is emitted by a source claim 1 , wherein said layer comprises a surface exposed to ultraviolet radiation and wherein the distance between said surface and the source is in the range from 2 cm to 10 cm.3. The method of claim 1 , wherein the duration of each pulse is in the range from 500 μs to 2 ms.4. The method of claim 1 , wherein the energy fluence of the ultraviolet radiation is in the range from 10 J/cm2 to 25 J/cm.5. The method of claim 1 , wherein only a portion of layer is heated during the irradiation step.6. The method of claim 5 , wherein the irradiation step is followed by a step of thermal anneal of the rest of the layer at a temperature in the range from 80° C. to 120° C.7. The method of claim 1 , wherein the solvent has an ...

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14-08-2014 дата публикации

THERMOELECTRIC CONVERSION ELEMENT

Номер: US20140224293A1
Принадлежит: NEC Corporation

A thermoelectric conversion element includes: a magnetic layer; a conductive film formed on the magnetic layer and configured to generate an electromotive force in an in-plane direction by inverse spin-Hall effect; and two terminal sections formed to contact with the conductive film at two portions whose potentials are different to each other by the electromotive force. Each of the two terminal sections contacts with the conductive film in a continuous or discrete contact surface. A longitudinal direction of a minimum rectangle which encompasses the continuous or discrete contact surface of each of the two terminal sections intersects with the direction of the electromotive force. 1. A thermoelectric conversion element comprising:a magnetic layer;a conductive film formed on the magnetic layer and configured to generate an electromotive force in an in-plane direction by inverse spin-Hall effect; andtwo terminal sections formed to contact with the conductive film at two portions whose potentials are different to each other by the electromotive force,wherein each of the two terminal sections contacts with the conductive film in a continuous or discrete contact surface, anda longitudinal direction of a minimum rectangle which encompasses the continuous or discrete contact surface of each of the two terminal sections intersects with the direction of the electromotive force.2. The thermoelectric conversion element according to claim 1 , wherein at least one of the two terminal sections is a terminal film formed to contact with the conductive film.3. The thermoelectric conversion element according to claim 2 , wherein a sheet resistance of the terminal film is lower than a sheet resistance of the conductive film.4. The thermoelectric conversion element according to claim 1 , wherein at least one of the two terminal sections contacts with the conductive film in the discrete contact surface.5. The thermoelectric conversion element according to claim 1 , wherein the two ...

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14-08-2014 дата публикации

THERMOELECTRIC CONVERSION ELEMENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20140224294A1
Принадлежит: NEC Corporation

A thermoelectric conversion element of the present invention includes: a magnetic layer; and an electrode layer formed on the magnetic layer. The electrode layer includes: a first region, and a second region having lower spin current—electric current conversion efficiency and resistivity than those of the first region. 1. A thermoelectric conversion element comprising:a magnetic layer; andan electrode layer formed on said magnetic layer, a first region, and', 'a second region having lower spin current—electric current conversion efficiency and resistivity than those of said first region., 'wherein said electrode layer includes2. The thermoelectric conversion element according to claim 1 , further comprising:an external connection terminal formed in contact with said second region of said electrode layer.31. The thermoelectric conversion element according to claim 1 , wherein claim 1 , when a lamination direction between said magnetic layer and said electrode layer is a first direction claim 1 , said first region and said second region are distributed in said first direction.4. The thermoelectric conversion element according to claim 3 , wherein said first region is positioned between said magnetic layer and said second region claim 3 , in said first direction.5. The thermoelectric conversion element according to claim 3 , wherein said second region is positioned between said magnetic layer and said first region claim 3 , in said first direction.6. The thermoelectric conversion element according to claim 1 , wherein said first region and said second region are distributed in an in-plane direction of said electrode layer.7. The thermoelectric conversion element according to claim 1 , wherein said first region is a first electrode film claim 1 ,wherein said second region is a second electrode film made of material different from said first electrode film, andwherein a spin current—an electric current conversion efficiency and a sheet resistance of said second electrode ...

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26-05-2016 дата публикации

MICROBOLOMETER DEVICES IN CMOS AND BiCMOS TECHNOLOGIES

Номер: US20160146672A1
Принадлежит:

A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material. 1. A method of forming a microbolometer unit cell , comprising:damaging a portion of a substrate to form a damaged region;forming infrared (IR) absorbing material on the damaged region; andisolating the IR absorbing material by forming a cavity underneath the IR absorbing material.2. The method of claim 1 , wherein the damaged region comprises an ion implantation process.3. The method of claim 2 , wherein the IR absorbing material is isolated from active devices claim 2 , which are protected during the ion implantation process.4. The method of claim 1 , wherein forming the cavity comprises forming a plurality of vent holes through the IR absorbing material and damaged region and removing portions of the substrate underneath the damaged region.5. The method of claim 1 , further comprising forming an electrical connection to the IR absorbing material.6. The method of claim 5 , wherein the forming of the electrical connection is a wirebonding process.7. The method of claim 5 , wherein the forming of the electrical connection comprises forming a via structure and wiring layer in electrical contact with the IR absorbing material.8. The method of claim 7 , further comprising forming a wirebond to the wiring layer.9. The method of claim 1 , further comprising annealing the damaged region to form a single crystalline structure.10. The method of claim 1 , further comprising forming a cavity above the IR absorbing material claim 1 , the forming of the cavity above the IR absorbing material comprises:depositing a sacrificial material ...

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21-08-2014 дата публикации

THERMOELECTRIC CONVERSION ELEMENT AND METHOD OF MANUFACTURING THE SAME, AND HEAT RADIATION FIN

Номер: US20140230873A1
Принадлежит: NEC Corporation

A thermoelectric conversion element includes: a magnetic body having a magnetization; and an electromotive body formed of material exhibiting a spin orbit coupling and jointed to the magnetic body. The magnetic body has an upper joint surface jointed to the electromotive body. The upper joint surface has concavities and convexities. 1. A thermoelectric conversion element , comprising:a magnetic body having a magnetization; anda first electromotive body formed of material exhibiting a spin orbit coupling and jointed to said magnetic body,wherein said magnetic body has a first joint surface jointed to said first electromotive body, andwherein said first joint surface has concavities and convexities.2. The thermoelectric conversion element according to claim 1 , further comprising a supporting structure claim 1 ,wherein said magnetic body further has a second joint surface opposed to said first joint surface,wherein said second joint surface is directly or indirectly coupled to said supporting structure, andwherein said second joint surface has concavities and convexities.3. The thermoelectric conversion element according to claim 2 , further comprising a buffer layer inserted between said supporting structure and said magnetic body claim 2 ,wherein said second joint surface is jointed to said buffer layer.4. The thermoelectric conversion element according to claim 3 , wherein said buffer layer is formed of oxide material.5. The thermoelectric conversion element according to claim 2 , further comprising a second electromotive body inserted between said supporting structure and said magnetic body and formed of material exhibiting a spin orbit coupling claim 2 ,wherein said second joint surface is jointed to said second electromotive body.6. The thermoelectric conversion element according to claim 1 , wherein said magnetization of said magnetic body is directed in a first direction claim 1 ,wherein said first joint surface has a shape in which a plurality of unit faces ...

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21-08-2014 дата публикации

Layered product for magnetic element, thermoelectric conversion element having layered product, and method of manufacturing the same

Номер: US20140230876A1
Принадлежит: NEC Corp, Tohoku University NUC

A magnetic element according to the present invention is formed of a layered product having a magnetic insulator film formed on a substrate including a material having no crystal structure. The magnetic insulator film has a columnar crystal structure.

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04-06-2015 дата публикации

ELECTROCALORIC MATERIAL

Номер: US20150155467A1
Автор: Kaneko Yukihiro
Принадлежит:

Provided is an electrocaloric material formed of a crystal represented by the composition formula HfAlO(where 0.071≦x≦0.091 and y≠0). 1. An electrocaloric material formed of a crystal represented by the composition formula HfAlO(where 0.071≦x≦0.091 and y≠0).2. The electrocaloric material according to claim 1 , whereinthe value of y is not less than 1 and not more than 3.3. An electrocaloric element claim 1 , comprising:{'sub': 1-x', 'x', 'y, 'an electrocaloric material formed of a crystal represented by the composition formula HfAlO(where 0.071≦x≦0.091 and y≠0); and'}a pair of electrodes provided on the electrocaloric material.4. The electrocaloric element according to claim 3 , whereinthe value of y is not less than 1 and not more than 3.5. A heating-cooling device claim 3 , comprising:{'sub': 1-x', 'x', 'y, 'an electrocaloric material formed of a crystal represented by the composition formula HfAlO(where 0.071≦x≦0.091 and y≠0);'}a pair of electrodes provided on the electrocaloric material;a power supply part for applying an electric field between the pair of electrodes; anda control part for switching application of the electric field to the electrocaloric material between a first state that no electric field is applied to the electrocaloric material and a second state that an electric field is applied to the electrocaloric material.6. The heating-cooling device according to claim 5 , whereinthe value of y is not less than 1 and not more than 3.7. A method for heating and cooling an electrocaloric material claim 5 , the method comprising the steps of:{'sub': 1-x', 'x', 'y, '(a) applying an electric field to an electrocaloric material formed of a crystal represented by the composition formula HfAlO(where 0.071≦x≦0.091 and y≠0) to heat the electrocaloric material, and'}(b) stopping the application of the electric field to the electrocaloric material after the step (a) to cool the electrocaloric material.8. The method according to claim 7 , whereinthe value of y is ...

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15-09-2022 дата публикации

PROCESS FOR MANUFACTURING A DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION, COMPRISING A GETTER MATERIAL

Номер: US20220291044A1

A process for manufacturing a detection device having at least one thermal detector covered by a mineral sacrificial layer, at least one getter portion covered by a carbon-based sacrificial layer, and a thin encapsulation layer surrounding the thermal detector and the getter portion includes a making a through-opening extending through the mineral sacrificial layer and opening on the substrate. The carbon-based sacrificial layer is deposited so as to cover the getter portion located in the through-opening and to entirely fill the through-opening. 1. A process for fabricating a device for detecting electromagnetic radiation , comprising:producing, on a substrate, at least one thermal detector, which is covered by at least one mineral sacrificial layer made of a mineral material able to be removed by a first chemical etch;producing a through-aperture that extends through the mineral sacrificial layer and that opens onto the substrate;producing a getter segment made of a metal that has a gettering effect, the getter segment being placed on and in contact with the substrate and at a distance from the thermal detector in a plane parallel to the substrate the getter segment being located in the through-aperture, at a distance from a lateral border that is defined by the mineral sacrificial layer and that bounds the through-aperture in the plane parallel to the substrate;producing a carbon-containing sacrificial layer made of a carbon-containing material that is inert to the first chemical etch and that is able to be removed by a second chemical etch, so as to cover the getter segment and to surround it in the plane parallel to the substrate, and to completely fill the through-aperture;producing a thin encapsulation layer comprising: a top portion that rests on the mineral sacrificial layer and on the carbon-containing sacrificial layer; and a peripheral portion that extends through the mineral sacrificial layer and that surrounds the thermal detector and the getter ...

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16-05-2019 дата публикации

PVDF-TrFE Co-Polymer Having Improved Ferroelectric Properties, Methods of Making a PVDF-TrFE Co-Polymer Having Improved Ferroelectric Properties and Methods of Changing the End Group of a PVDF-TrFE Co-Polymer

Номер: US20190148126A1
Принадлежит: XEROX CORPORATION

A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or chemically dissimilar end group, such as an iodine, sulfate, aldehyde or carboxylic acid end group, may be transformed to a hydrogen, fluorine or chlorine atom. A method of making a PVDF-TrFE co-polymer is disclosed, including polymerizing a mixture of VDF and TrFE using an initiator, and transforming a bulky or chemically dissimilar end group to a hydrogen, fluorine or chlorine atom. A PVDF-TrFE co-polymer or other fluorinated alkene polymer is also disclosed. The co-polymer may be used as a ferroelectric, electromechanical, piezoelectric or dielectric material in an electronic device. 1. A method of forming an electronic device , comprising depositing a PVDF-TrFE co-polymer on a substrate as a ferroelectric , electromechanical , piezoelectric or dielectric material in the electronic device , wherein the PVDF-TrFE co-polymer has an end group selected from H , F and Cl.2. The method of claim 1 , wherein the PVDF-TrFE co-polymer has a formula X—(CHF)—(CHF)—X claim 1 , where Xis R claim 1 , H claim 1 , F or Cl claim 1 , R is a C-alkyl group that may contain from 1 to 2n+1 fluorine atoms claim 1 , Xis independently H claim 1 , F or Cl claim 1 , n is an integer of 1 to 6 claim 1 , p and q are integers of 2 or more claim 1 , and p+q>2000.3. The method of claim 2 , wherein the electronic device is a memory cell.4. The method of claim 1 , further comprising claim 1 , prior to depositing the PVDF-TrFE co-polymer on the substrate claim 1 , exchanging an iodine or hydroxyl end group on the PVDF-TrFE co-polymer with the end group selected from H claim 1 , F and Cl.5. The method of claim 4 , wherein the iodine or hydroxyl end group on PVDF-TrFE copolymer is the iodine end group claim 4 , the iodine end group is exchanged with the hydrogen end group claim 4 , and exchanging the iodine end group with the hydrogen end group comprises ...

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16-05-2019 дата публикации

METHOD FOR PRODUCING A STACK OF LAYERS FOR A MATRIX THERMAL SENSOR

Номер: US20190148618A1
Принадлежит:

A method produces a matrix of pixels of a thermal sensor, suitable for passive addressing. The matrix of pixels includes a layer including a first series of electrically conducting strips, forming charge collection macro-electrodes; a layer including a pyroelectric material; and a layer including a second series of electrically conducting strips, forming heating strips. The method includes a step of transfer of one on the other of a first and a second elementary stack, the first elementary stack including the first series of strips, and the second elementary stack including the second series of strips. This method makes it possible to relax the manufacturing constraints of the series of strips. 1. A method for producing a matrix of pixels for a thermal sensor , each pixel including a pyroelectric capacitance formed by a portion including a pyroelectric material arranged between a charge collection electrode and a reference electrode , and a heating element , the heating elements of the pixels of a same line of pixels being integrally formed together into a same heating strip , the charge collection electrodes of the pixels of a same column of pixels being integrally formed together into a same charge collection macro-electrode , and the matrix of pixels being constituted of a stack of layers comprising:a layer of charge collection electrodes, including a first series of electrically conducting strips parallel with each other, forming the charge collection macro-electrodes;a layer including a pyroelectric material, comprising the pyroelectric material portions of each of the pixels; anda heating layer, including a second series of electrically conducting strips parallel with each other, forming the heating strips, wherein the layer including a pyroelectric material is located between the layer of charge collection electrodes and the heating layer;the method comprising:transferring one on the other of a first and a second elementary stack, to form said stack of layers ...

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07-05-2020 дата публикации

REMOTE POWER TRANSMISSION TO AN AIRSHIP

Номер: US20200144866A1
Принадлежит:

A ground-, sea- or aircraft-based laser transmission system can be implemented to remotely and wirelessly transmit power to an airship to be stored in an energy storage device, such as a battery. The airship can include an energy collection system having a plurality of photovoltaic cells arranged in an array and electrically coupled to the energy storage system. The energy collection system can also include one or more control link components positioned adjacent the array of photovoltaic cells. The control link components are configured to establish a control link between the airship and a power transmission system. The plurality of photovoltaic cells are configured to transfer laser beam transmitted energy from the power transmission system to the energy storage system. 1. A system comprising: an outer casing having an exterior surface and containing a gas therein;', 'an energy storage system comprising one or more energy storage devices;', 'an energy distribution and control system electrically coupled to the energy storage system and configured to distribute power from the energy storage system to one or more systems of the airship; and', a laser tolerant layer,', 'an insulation layer,', 'a plurality of photovoltaic cells arranged in an array and electrically coupled to the energy storage system, and', 'one or more retroreflectors positioned adjacent the array of photovoltaic cells; and, 'an energy collection system coupled to the exterior surface of the outer casing, the energy collection system comprising], 'an airship comprising a plurality of power transmission lasers;', 'a beam control system for the plurality of power transmission lasers;', 'one or more control link lasers; and', establish a control link between the power transmission system and the airship via the one or more control link lasers and the retroreflectors of the airship, and', 'control the plurality of power transmission lasers to transmit power to the airship;, 'a controller configured to], ...

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07-06-2018 дата публикации

PATTERNED FOCAL PLANE ARRAYS OF CARBON NANOTUBE THIN FILM BOLOMETERS WITH HIGH TEMPERATURE COEFFICIENT OF RESISTANCE AND IMPROVED DETECTIVITY FOR INFRARED IMAGING

Номер: US20180156668A1
Принадлежит:

A method of preparation of focal plane arrays of infrared bolometers includes processing carbon nanotubes to increase a temperature coefficient of resistance (TCR), followed by patterning to form focal plane arrays for infrared imaging. 1. A method of processing carbon nanotubes for application in focal plane arrays for infrared bolometric detectors , comprising a physical processing step and a chemical functionalization step whereby a temperature coefficient of resistance (TCR) for the carbon nanotubes is increased.2. The method of claim 1 , including providing the physical processing step comprising one or more of ultrasonication claim 1 , shear mixing claim 1 , and annealing.3. The method of claim 1 , including providing the chemical functionalization step comprising one or more of: a diazonium reaction; non-covalent or covalent attachment of one or more functional groups selected from octadecylamine groups claim 1 , poly(m-aminobenzenesulfonic acid) groups claim 1 , polyethyleneglycol groups claim 1 , and amino phenyl functional groups; an organometallic complexation; a Diels-Alder reaction; a free radical reaction; a Birch reaction; a gas phase reaction; a carbene reaction; a nitrene reaction; and doping or compensation for a natural p-doped state of the carbon nanotubes.4. The method of claim 3 , including providing the diazonium chemistry functionalization step comprising reacting carbon nanotube material with a diazonium salt.5. The method of claim 4 , including selecting the diazonium salt from the group consisting of bromobenzene diazonium salt claim 4 , nitrophenyl diazonium salt claim 4 , and methoxy diazonium salt.6. The method of claim 3 , including conducting the diazonium reaction on a dispersion of carbon nanotubes in organic solvents.7. The method of claim 3 , including conducting the diazonium reaction on a carbon nanotube thin film.8. The method of claim 3 , including conducting the chemical functionalization step on a patterned carbon nanotube ...

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09-06-2016 дата публикации

INTEGRATED CIRCUIT COMPRISING A GAS SENSOR

Номер: US20160163766A1
Принадлежит:

An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element. 1. A method of making an integrated circuit , the method comprising:providing a semiconductor substrate having a major surface;forming a metallization stack on the major surface;forming a trench in the metallization stack; andforming a thermal conductivity based gas sensor having an electrically resistive sensor element located in the trench for exposure to a gas to be sensed,wherein the trench forms a barrier for inhibiting a flow of the gas across the sensor element.2. The method of claim 1 , wherein the sensor element is formed in a metal level or via level of the metallization stack.3. The method of claim 1 , wherein the sensor element is formed in a lower level of the metallization stack.4. The method of claim 1 , wherein a patterned layer is formed on the metallization stack claim 1 , and wherein the trench and the patterned layer together form the barrier.5. The method of claim 4 , wherein the patterned layer comprises a photoresist material.6. The method of claim 4 , wherein the depth of a cavity formed by the patterned layer is at least 10 μm.7. A method of making an integrated circuit claim 4 , the method comprising:providing a semiconductor substrate having a major surface;forming a trench in a metallization stack on the major surface; andforming a thermal conductivity based gas sensor having an electrically resistive sensor element located in the trench for exposure to a gas to be sensed;wherein the gas sensor further comprises a heater element for heating the gas to be sensed; wherein the heater ...

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14-05-2020 дата публикации

SEMICONDUCTOR SENSOR DEVICE AND SEMICONDUCTOR SENSOR DEVICE MANUFACTURING METHOD

Номер: US20200152695A1
Принадлежит: Mitsubishi Electric Corporation

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed. 1. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed , the semiconductor sensor device comprising:a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines;a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion; anda wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, whereinan upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.2. The semiconductor sensor device according to claim 1 , wherein a sectional form of the conductive member is of a U-form or a V-form having a bent portion claim 1 , and a leading end portion of the conductive member is of a form having roundness to an arc form.3. The semiconductor sensor device ...

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16-06-2016 дата публикации

ELECTRONIC DEVICES

Номер: US20160169988A1
Принадлежит:

We describe a method of detecting a voltage from a spin-current, the spin-current comprising a current having a spin predominantly aligned in a spin direction, the method comprising: flowing the spin current through a layer of organic material in a vertical direction through the layer; and detecting an electric field in a lateral direction in the layer of organic material. In a preferred embodiment the organic layer is anisotropic and has a higher electrical conductivity in the lateral direction than in the vertical direction. 1. A method of detecting an electrical signal from a spin-current , wherein said spin-current comprises a current having a spin predominantly aligned in a spin direction , the method comprising:flowing said spin current through a layer of organic material in a vertical direction through said layer; anddetecting a charge current or an electric field in a lateral direction in said layer of organic material.2. A method as claimed in further comprising generating said spin-current by flowing an electrical current through a magnetic material adjacent said layer of organic material.3. A method as claimed in further comprising generating said spin-current by exciting magnetic resonance in a magnetic material adjacent said layer of organic material using an oscillating drive signal.4. (canceled)5. A method as recited in wherein said layer of organic material has an anisotropic electrical conductivity claim 1 , having a higher conductivity in said lateral direction than in said vertical direction.6. (canceled)7. (canceled)8. A method as recited in wherein said layer of organic material includes a material to enhance spin-orbit coupling within said layer of organic material.9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. A method as claimed in wherein said charge current or said electric field is generated in said organic material using the Inverse Spin Hall Effect; and wherein said detection comprises detecting the Inverse Spin ...

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21-05-2020 дата публикации

Electrocaloric heat transfer system with patterned electrodes

Номер: US20200158385A1
Принадлежит: Carrier Corp

An electrocaloric module includes an electrocaloric element that includes an electrocaloric film, a first electrode on a first surface of the electrocaloric film, and a second electrode on a second surface of the electrocaloric film. A support is attached along an edge portion of the electrocaloric film, leaving a central portion of the electrocaloric film unsupported film. At least one of the first and second electrodes includes a patterned disposition of conductive material on the film surface. The electrocaloric module also includes a first thermal connection configured to connect to a first thermal flow path between the electrocaloric element and a heat sink, a second thermal connection configured to connect to a second thermal flow path between the electrocaloric element and a heat source, and a power connection connected to the first and second electrodes and configured to connect to a power source.

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21-06-2018 дата публикации

THERMOELECTRIC MODULE

Номер: US20180172324A1

A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode. 1. A thermoelectric module , comprising:a plurality of thermoelectric components having the same type of semiconductor material;a first electrode comprising a first parallel connection part and a first serial connection part, the plurality of thermoelectric components being electrically connected to the first parallel connection part and each of the plurality of thermoelectric components separated from one another, the first serial connection part configured for being electrically connected to other electrical components; anda second electrode, the plurality of thermoelectric components being electrically connected to the second electrode and located between the first parallel connection part and the second electrode.2. The thermoelectric module according to claim 1 , wherein the plurality of thermoelectric components is made of p-type semiconductor material or n-type semiconductor material.3. The thermoelectric module according to claim 1 , wherein the first parallel connection part has at least one buffering hole or at least one buffering notch claim 1 , and the at least one buffering hole or the at least one buffering notch is located between the plurality of thermoelectric components.4. The thermoelectric ...

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06-06-2019 дата публикации

ELECTROCALORIC HEAT TRANSFER SYSTEM

Номер: US20190170409A1
Принадлежит:

A heat transfer system is disclosed in which, an electrocaloric material includes a copolymer of a monomer mixture including (i) vinylidene fluoride, (ii) an addition polymerization monomer selected from tetrafluoroethylene, trifluoroethylene, or a monomer smaller than trifluoroethylene, and (iii) a halogenated addition polymerization monomer different than (ii) that is larger than vinylidene fluoride. The electrocaloric material also includes an additive selected from a nucleating agent having a polar surface charge, electrocalorically active solid particles, or a combination thereof. Electrodes are disposed on opposite surfaces of the electrocaloric material, and an electric power source is configured to provide voltage to the electrodes. The system also includes a first thermal flow path between the electrocaloric material and a heat sink, and a second thermal flow path between the electrocaloric material and a heat source. 1. A heat transfer system , comprising [ (i) vinylidene fluoride,', '(ii) an addition polymerization monomer selected from tetrafluoroethylene, trifluoroethylene, or a monomer smaller than trifluoroethylene, and', '(iii) a halogenated addition polymerization monomer different than (ii) that is larger than vinylidene fluoride, and, '(1) a copolymer of a monomer mixture comprising, '(2) an additive comprising a nucleating agent having a polar surface charge;, 'an electrocaloric material comprisingelectrodes disposed on opposite surfaces of the electrocaloric material; a first thermal flow path between the electrocaloric material and a heat sink; a second thermal flow path between the electrocaloric material and a heat source; and an electric power source configured to provide voltage to the electrodes.2. The heat transfer system of claim 1 , wherein the addition polymerization monomer (ii) comprises trifluoroethylene.3. The heat transfer system of claim 1 , wherein the addition polymerization monomer (iii) comprises chlorofluoroethylene or a ...

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28-05-2020 дата публикации

SUSPENDED-MEMBRANE THERMAL DETECTOR COMPRISING A DEFORMABLE ABSORBER

Номер: US20200166408A1

A thermal detector including a three-dimensional structure adapted for detecting electromagnetic radiation, suspended above and thermally insulated from a substrate, including a membrane and an absorber, the latter being formed on the basis of a shape-memory alloy and being adapted to have a flat detection configuration when its temperature is less than or equal to Tand a cooling curve configuration when its temperature is above an austenite start temperature A. 111-. (canceled)13. The thermal detector according to claim 12 , wherein the shape-memory alloy has a volume fraction χof the martensitic phase claim 12 , and has the flat detection configuration when the volume fraction χis greater than or equal to 0.95 claim 12 , and has the cooling curve configuration when the volume fraction χis less than 0.95.14. The thermal detector according to claim 12 , wherein the shape-memory alloy has a volume fraction χof the martensitic phase claim 12 , and has a volume fraction χless than or equal to 0.05 when its temperature is greater than or equal to an austenite finish temperature A claim 12 , said austenite finish temperature Abeing below a predetermined threshold temperature Tfor protection of the thermometric transducer.15. The thermal detector according to claim 12 , wherein the deformable absorber comprises a fixed part resting in contact with the membrane claim 12 , and a free part configured to deform as a function of the temperature of the deformable absorber and extending from the fixed part and spaced from the membrane.16. The thermal detector according to claim 12 , wherein the shape-memory alloy is a metal alloy based on NiTi.17. The thermal detector according to claim 12 , wherein the shape-memory alloy is a metal alloy selected from TiNiHfwith x>50 at % claim 12 , TiNiZrwith x>49 at % claim 12 , TiNiZrCuCowith x>10 at % claim 12 , TiNiPtwith x<25 at % claim 12 , TiNiPd claim 12 , TiNiCu claim 12 , TiNiCuwith x>7.5 at % claim 12 , or an alloy based on ...

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06-06-2019 дата публикации

THERMAL PATTERN SENSOR WITH PYROELECTRIC CAPACITANCE AND HARD PROTECTIVE LAYER

Номер: US20190172993A1
Принадлежит:

Thermal pattern sensor comprising several pixels arranged on a substrate, each pixel including at least: a pyroelectric capacitance formed by at least one portion of pyroelectric material arranged between at least one lower electrode and at least one upper electrode, with the lower electrode arranged between the substrate and the portion of pyroelectric material, a dielectric layer such that the upper electrode is arranged between the portion of pyroelectric material and the dielectric layer, a heating element including at least one deposition of electrically conductive particles and such that the dielectric layer is arranged between the upper electrode and the heating element, a protective layer arranged between the dielectric layer and the heating element and including at least one material of which the Shore A hardness is greater than or equal to around 60. 1. Thermal pattern sensor comprising several pixels arranged on a substrate , each pixel including at least:a pyroelectric capacitance formed by at least one portion of pyroelectric material arranged between at least one lower electrode and at least one upper electrode, with the lower electrode arranged between the substrate and the portion of pyroelectric material,a dielectric layer such that the upper electrode is arranged between the portion of pyroelectric material and the dielectric layer,a heating element including at least one deposition of electrically conductive particles and such that the dielectric layer is arranged between the upper electrode and the heating element,a protective layer arranged between the dielectric layer and the heating element and including at least one material of which the Shore A hardness is greater than or equal to around 60.2. Thermal pattern sensor according to claim 1 , in which the thickness of the protective layer is between around 100 nm and 600 nm.3. Thermal pattern sensor according to claim 1 , in which the protective layer comprises at least one cross-linkable ...

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06-06-2019 дата публикации

CAPTEUR DE MOTIF THERMIQUE A CAPACITE PYROELECTRIQUE

Номер: US20190172994A1
Автор: BENWADIH Mohammed
Принадлежит:

Thermal pattern sensor comprising several pixels located on a substrate, each pixel comprising a pyroelectric capacitance, the pyroelectric capacitance comprising, a layer of porous pyroelectric material located between a first electrically conducting electrode and a second electrically conducting electrode, particles made of a first material at least partially filling the pores of the layer of porous pyroelectric material, the first material being electrically insulating and having pyroelectric properties and a layer made of a second material being placed between the layer made of a pyroelectric material and the second electrode, the second material being electrically insulating and having pyroelectric properties. 123.-. (canceled)24. Thermal pattern sensor such as a fingerprint sensor , comprising several pixels located on a substrate , each pixel comprising a pyroelectric capacitor , the pyroelectric capacitor comprising a layer made of a porous pyroelectric material located between a first electrically conducting electrode and a second electrically conducting electrode ,wherein particles made of a first material at least partially fill the pores of the layer of porous pyroelectric material,the first material being electrically insulating and having pyroelectric properties, and wherein a layer made of a second material is placed between the layer made of a porous pyroelectric material and the second electrode,the second material being electrically insulating and having pyroelectric properties.25. Sensor according to claim 24 , wherein the first material and the second material are made of stoichiometric ZnO.26. Sensor according to claim 24 , wherein the first material and the second material are made of a mixture of Zn(OH)and stoichiometric ZnO.27. Sensor according to claim 24 , wherein the first material and the second material are made of a mixture of Zn(OH)and non-stoichiometric ZnO.28. Sensor according to claim 24 , wherein the first material and the second ...

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22-06-2017 дата публикации

ENHANCED LATERAL CAVITY ETCH

Номер: US20170178916A1
Принадлежит:

A cavity is formed in a semiconductor substrate wherein the width of the cavity is greater than the depth of the cavity and wherein the depth of the cavity is non uniform across the width of the cavity. The cavity may be formed under an electronic device in the semiconductor substrate. The cavity is formed in the substrate by performing a first cavity etch followed by repeated cycles of polymer deposition, cavity etch, and polymer removal. 1. A semiconductor device comprising a cavity in a substrate wherein the cavity is wider than it is deep and wherein a depth of the cavity is non-uniform across a width of the cavity.2. The semiconductor device of claim 1 , wherein the substrate is single crystal silicon.3. The semiconductor device of claim 1 , wherein the substrate is single crystal silicon germanium.4. The semiconductor device of claim 1 , wherein the cavity underlies an opening in an overlying masking layer.5. The semiconductor device of claim 4 , wherein the masking layer comprises a layer of silicon nitride overlying a layer of silicon dioxide.6. The semiconductor device of claim 1 , wherein the cavity is under an inductor.7. The semiconductor device of claim 1 , wherein the cavity is under a bolometer.8. The semiconductor device of claim 1 , wherein the cavity is under an electronic device that is sensitive to capacitive coupling to the substrate.9. A semiconductor device comprising:a silicon substrate without an etch stop layer within the silicon substrate;a cavity in the silicon substrate wherein the cavity is at least twice as wide as it is deep.10. The semiconductor device of claim 9 , wherein the silicon substrate is single crystal silicon.11. The semiconductor device of claim 9 , wherein the silicon substrate is single crystal silicon germanium.12. The semiconductor device of claim 9 , wherein the cavity is under an inductor.13. The semiconductor device of claim 9 , wherein the cavity is under a bolometer.14. The semiconductor device of claim 9 , ...

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13-06-2019 дата публикации

INFRARED SENSOR AND METHOD FOR COOLING BOLOMETER INFRARED RAY RECEIVER OF INFRARED SENSOR

Номер: US20190178718A1
Принадлежит:

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly. 1. An infrared sensor comprising:a base substrate including a recess;a bolometer infrared ray receiver; anda Peltier device, wherein a resistance variable layer in which resistance varies upon absorption of an infrared ray,', 'a bolometer first beam electrically connected to the resistance variable layer, and', 'a bolometer second beam electrically connected to the resistance variable layer,, 'the bolometer infrared ray receiver comprises'}the Peltier device is interposed between the bolometer infrared ray receiver and the recess,a front surface of the bolometer infrared ray receiver is irradiated with the infrared ray,the Peltier device comprises a Peltier first beam formed of a p-type semiconductor material, and a Peltier second beam formed of an n-type semiconductor material,the Peltier device is in contact with a back surface of the bolometer infrared ray receiver,one end of the bolometer first beam, one end of the bolometer second beam, one end of the Peltier first beam, and one end of the Peltier second beam ...

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13-06-2019 дата публикации

INFRARED PIXEL STRUCTURE, MANUFACTURING METHOD THEREOF AND HYBRID IMAGE DEVICE

Номер: US20190178721A1
Автор: KANG Xiaoxu
Принадлежит: SHANGHAI IC R&D CENTER., LTD.

The present invention provides an infrared pixel structure and a hybrid imaging device which use comb-shaped top plates and bottom plates to form capacitors. The upper electrode has a non-fixed end such that the infrared sensitive element in the upper electrode generates thermal stress and deforms when absorbing the infrared light, which changes the capacitance of the capacitors formed by the top plates and the bottom plates to achieve infrared detection and increase the device sensitivity. Furthermore, the infrared pixel structure can be used in an infrared light and visible light hybrid imaging device to achieve visible light imaging and infrared imaging in a same silicon substrate, so as to increase the imaging quality. 1. An infrared pixel structure formed on a silicon substrate , the infrared pixel structure comprises:a lower electrode disposed in the silicon substrate, the lower electrode comprises multiple bottom plates arranged in a first direction, and a bottom connector arranged in a second direction for connecting the bottom plates;an upper electrode disposed above the lower electrode, the upper electrode comprises multiple top plates arranged in the first direction and inter-arranged among the bottom plates, and a top connector arranged in the second direction for connecting the top plates; the top connector has a fixed end and a non-fixed end, the non-fixed end is capable of moving relative to the fixed end;an infrared-sensitive element provided on an upper surface of the top connector, for absorbing incident infrared light and producing thermal deformation to make the non-fixed end move relative to the fixed end and produce a relative displacement between the top plates and the bottom plates, so as to change capacitive signals of the top plates and the bottom plates to achieve infrared detection.2. The infrared pixel structure according to claim 1 , wherein the bottom connector is connected to a lead end of the lower electrode; the fixed end is a ...

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