ЭЛЕКТРОННЫЕ УСТРОЙСТВА

Изобретение относится к электронным устройствам, содержащим один или более органических слоев. Способ формирования электронного устройства включает формирование на несущей подложке множества электронно-функциональных элементов, образованных стопкой слоев, содержащей нижний проводящий слой, причем способ включает этап формирования между несущей подложкой и нижним проводящим слоем непроводящего слоя, который обеспечивает увеличение сцепления нижнего проводящего слоя с несущей подложкой, где непроводящий слой содержит нитридный слой, содержащий на поверхности раздела с нижним проводящим слоем менее 10 атомарных процентов кислорода. Изобретение позволяет повысить надежность электронных устройств. 2 н. и 15 з.п. ф-лы, 1 ил.

ПРОЗРАЧНЫЙ ЭЛЕКТРОД НА ПОДЛОЖКЕ ДЛЯ ОСИД

Verfahren zur Passivierung der organischen Elektrode einer organischen Solarzelle und organische Solarzelle

Verfahren zur Passivierung der anorganischen Elektrode einer auf der Basis photovoltaisch aktiver organischer Halbleiter aufgebauten Solarzelle, wobei die anorganische Elektrode vor der Passivierung einer Reinigungsvorbehandlung unterzogen wurde, dadurch gekennzeichnet, dass auf der anorganischen Elektrode in einem ersten Schritt im Vakuum ein Metallalkoholat aus der Dampfphase abgeschieden wird, dessen chemisch nicht gebundener Anteil anschließend durch Sublimieren wieder entfernt wird, und in einem zweiten Schritt eine sublimierende niedermolekulare, in der Dampfphase stabile Substanz aus der Gruppe der Phenole, Alkohole oder organischen Säuren über die Elektrode geleitet wird, wobei wiederum chemisch nicht gebundene Anteile durch Sublimieren entfernt werden, so dass auf der Oberfläche der Elektrode eine Monolage der Substanz verbleibt.

Verfahren zur Herstellung elektrolumineszierender Vorrichtungen

Verfahren zum Schneiden eines Elementes zum Formen einer gewünschten Struktur

ERZEUGUNG ELEKTRISCH LEITFÄHIGER SCHICHTEN DURCH FARBSTOFFDRUCK

Wäßrige Dispersionen von Polythienothiophenen mit fluorierten Ionenaustausch-Polymeren als Dotierstoffe.

Organic light emitting diode display panel and method of fabricating the same

Method for fabricating a thin film pattern

A method of fabricating a thin film pattern according to an embodiment of the present invention comprises forming an organic material pattern (115) on a substrate (102), forming a metal material (118a) of liquid phase on a substrate (102) provided with the organic material pattern (115), hardening the metal material (118a) of liquid phase, and removing the metal material (118a) located on the organic material pattern (115), allowing some metal material (118a) to be left at an area non-overlapped with the organic material pattern (115).

Display apparatus and multi display apparatus including the same

Display apparatus 10 has a first substrate 100, including pixels in a display portion, coupled to a second substrate 200, and a routing portion 400 on outer surfaces of the first and second substrates. The second substrate 200 has a metal pattern layer connected to the routing portion and a rear insulation layer comprising an isolation pattern area. The rear insulation layer may be inorganic and include a thicker non-isolation pattern area. A pad 110 may connect the routing portion and each outermost pixel of the first substrate 100 at the end of the display portion. Pad parts may be on an edge and rear of the second substrate 200, electrically connected by a link line. The display apparatus, without bezel, may reduce image discontinuity between adjacent modules of a lattice type multi-display. A panel support may include a plate with magnetised fastening members connected to the second substrate 200.

Top-emitting electroluminescent devices comprising bus bars

A top-emitting display apparatus is provided having a plurality of pixels, said apparatus comprising an anode formed on a substrate (1), a well-defining layer (2) , the thickness of said well-defining layer being insufficient for it to serve as a spacer for an evaporation mask, an organic electroluminescent layer (8) formed on the anode in each well of the well-defining layer (2) to form said plurality of pixels, a layer of metal (6) formed on the top surface of the well-defining layer (2) , and a transparent cathode layer (9) deposited such that it is formed both on the electroluminescent layer (8) and the layer of metal (6) on the top surface of the well-defining layer (2). A method for the manufacture of such an apparatus is also provided.

Inkjet printing of cross point passive matrix devices

Methods of manufacturing a cross-point device such as an organic ferroelectric memory array can use inkjet printing from solution in ambient conditions to deposit electrodes 200 and regions of functional material 150 such as ferroelectric material or semiconductor material between top 200 and bottom 100 electrodes at the intersections, thereby reducing the need for lithography and planarising techniques. In some embodiments, two or three sub-arrays of overlapping or interlacing crossed electrodes are formed, with areas of dielectric material (fig 4c; 160b, 160c) printed between sub-arrays of electrodes to electrically insulate the arrays from one another, so that regions of functional material which are part of adjacent cross-point arrays at least partially overlap on the same vertical level. Intersecting electrodes for each array may be at an angle to one another other than 90 degrees (see figs 9). A wetting layer may be deposited on the functional material prior to deposition of the electrodes ...

Method of semiconductor element application

Organic electronic device and method of manufacture

A method of forming an organic electronic device comprising the steps of: forming a surface modification layer comprising a partially fluorinated fullerene on at least part of a surface of at least one electrode of the device by depositing a solution comprising the partially fluorinated fullerene and at least one solvent onto the electrode surface; and forming an organic semiconductor layer comprising at least one organic semiconductor on the surface modification layer. The partially fluorinated fullerene is a partially fluorinated Buckminster fullerene, optionally a partially fluorinated C60.

Organic light emitting diode display panel and method of fabricating the same

An organic light emitting diode (OLED) display panel 140 comprises: an organic layer 324 positioned on a first electrode 320; a multilayer thin film 330 is positioned on the organic layer 324, the multilayer thin film 324 being formed of a first plurality of graphene layers and a second plurality of graphene layers, where the first plurality of graphene layers contains interlayer bonding 350 between two or more upper layers thereof. Also disclosed is a method of forming the above OLED display panel 140. The second plurality of graphene layer may not contain any interlayer bonding. The forming of the interlayer bonding 350 may be achieved by performing a hydrogen plasma treatment on the first plurality of graphene layers. The present invention seeks to provide improved moisture resistance in the multilayer film by restricting moisture paths between the graphene particles in the first plurality of graphene layers.

Conductivity variable composition, conductivity variable laminated body, and conductive pattern formed body

Conductive elements in organic electronic devices

Organic thin film transistors and method of making them

An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface- modification layers consist essentially of a partially fluorinated fullerene.

PRODUCTION OF ELECTRONIC ELEMENTS

POLYMERE PROCESS CONCERNED

MANUFACTURING PROCESS FOR AN ORGANIC ELECTRONIC CONSTRUCTION UNIT WITH HIGH-DISSOLVED STRUCTURING

DEVICE ON ORGANIC BASIS AND MANUFACTURING PROCESS FOR IT

PROCEDURE FOR THE PRODUCTION OF AN ELECTRODE LAYER SAMPLE IN AN ORGANIC FUNCTIONAL DEVICE

PROCEDURE FOR THE PRODUCTION OF AN ORGANIC TRANSISTOR WITH SELFADJUSTING GATE ELECTRODE

STRUCTURING OF ELECTRICAL FUNCTION LAYERS OF MEANS OF A TRANSFER FOIL AND STRUCTURING OF THE ADHESIVE

MANUFACTURING PROCESS OF ORGANIC RECTIFYING DIODES

MANUFACTURING METHOD OF ELECTRODES FROM CONDUCTIVE POLYMER

Coil-Coating-Verfahren

Es wird ein Coil-Coating-Verfahren zur mehrschichtigen Beschichtung eines sich im Banddurchlauf befindlichen endlosen unbeschichteten Metallbands (3), bei dem an einer Flachseite (4) des Metallbands (3) eine Konversionsschicht (5) gegebenenfalls erzeugt wird, nachfolgend auf diese Flachseite (4) mithilfe eines Walzenauftrags eine aushärtbare polymere Grundierung (9) zur Ausbildung einer elektrisch isolie- renden Grundierungsschicht (10) und auf diese Grundierungsschicht (10) mithilfe eines Walzenauftrags ein aushärtbarer polymerer Lack (11) zur Ausbildung einer elektrisch isolierenden Lackschicht (12) aufgebracht und gehärtet werden, wobei zwischen Grundierungsschicht (10) und Lackschicht (12) wenigstens eine zumin- dest elektrisch leitende Leiterbahn (15) zumindest bereichsweise aufgedruckt wird. Um die Reproduzierbarkeit des Coil-Coating-Verfahrens zu erhöhen, wird vorge- schlagen, dass an der vorgehärteten Grundierungsschicht (10) die Leiterbahn (15) bereichsweise aufgedruckt wird und ...

Flexible member having layer structure with metal layer

Die vorliegende Erfindung betrifft ein beschichtetes flexibles Bauteil enthaltend ein flexibles Substrat (100) und mindestens einen auf dem Substrat (100) unmittelbar oder über eine oder mehrere Zwischenschichten angeordneten Schichtaufbau, der eine metallische Lage (120; 170a; 170b) mit einer zu der einen Seite an die metallische Lage unmittelbar angrenzenden halbleitenden oder elektrisch isolierenden Lage (100; 110; 140; 150; 180) sowie zu der anderen Seite an die metallische Lage unmittelbar angrenzenden halbleitenden oder elektrisch isolierenden Lage (100; 110; 140; 150; 180) aufweist. Die metallische Lage (120; 170a; 170b) wird gebildet aus einer Einzelschicht aus MoX, oder aus einem Zweischichtsystem aus MoX in Kombination mit einer Cu-basierten Schicht oder aus MoX in Kombination mit einer Al-basierten Schicht, oder aus einem Dreischichtsystem aus zwei MoX-Schichten mit dazwischenliegender Cu-basierter Schicht oder aus zwei MoX-Schichten mit dazwischenliegender Al-basierter Schicht ...

PRODUCTION OF INTERLACED TWO-DIMENSIONAL ONE POLYMERS WITH an ASYMMETRY OF $G (A), $G (B) - LACTONEN

Method for preparing an organic film at the surface of a solid substratein non-electrochemical conditions, solid substrate thus formed and preparation kit

The present invention relates to a method for preparing an organic film at the surface of a solid substrate, comprising a step of contacting said surface with a liquid solution containing (i) at least one solvent, at least one adhesion primer in non-electrochemical conditions and for generating radicalar entities from the adhesion primer. The liquid solution may further include (iii) at least one monomer different from the adhesion primer and polymerisable in a radicalar manner. The present invention also relates to an electrically non-conductive solid substrate on which an organic film is grafted according to said method, and to a kit for preparing an essentially polymeric organic film at the surface of the solid substrate.

METHOD OF MAKING TRANSISTORS

ORGANIC SEMICONDUCTOR AND METHOD

Transparent conductors incorporating additives and related manufacturing methods

A transparent conductor includes a film of a conductive ceramic. Additives are at least partially incorporated into the film. The additives are at least one of electrically conductive and semiconducting, and at least one of the additives has an aspect ratio of at least 3.

STABILIZED SILVER NANOPARTICLES AND THEIR USE

A process comprising: reacting a silver compound with a reducing agent comprising a hydrazine compound in the presence of a thermally removable stabilizer in a reaction mixture comprising the silver compound, the reducing agent, the stabilizer, and an optional solvent, to form a plurality of silver-containing nanoparticles with molecules of the stabilizer on the surface of the silver-containing nanoparticles.

METHODS FOR FABRICATING ISOLATED MICRO- AND NANO- STRUCTURES USING SOFT OR IMPRINT LITHOGRAPHY

The presently disclosed subject matter describes the use of fluorinated elastomer-based materials, in particular perfluoropolyether (PFPE)-based materials, in high-resolution soft or imprint lithographic applications, such as micro- and nanoscale replica molding, and the first nano-contact molding of organic materials to generate high fidelity features using an elastomeric mold. Accordingly, the presently disclosed subject matter describes a method for producing free-standing, isolated nanostructures of any shape using soft or imprint lithography techniques.

SOLUTION PROCESSING

... ²²²A method for forming on a substrate an electronic device including an ²electrically conductive or semiconductive material in a plurality of regions, ²the operation of the device utilising current flow from a first region to a ²second region, the method comprising: forming a mixture by mixing the material ²with a liquid; forming on the substrate a confinement structure including a ²first zone in a first area of the substrate and a second zone in a second area ²of the substrate, the first zone having a greater repellence for the mixture ²than the second zone, and a third zone in a third area of the substrate spaced ²from the second area by the first area, the first zone having a greater ²repellence for the mixture than the third zone, and depositing the material on ²the substrate by applying the mixture over the substrate whereby the deposited ²material may be confined by the relative repellence of the first zone to ²spaced apart regions defining the said first and second regions of the ...

FABRICATION METHOD FOR LARGE AREA MECHANICALLY FLEXIBLE CIRCUITS AND DISPLAYS

A method of fabricating large area electronics is disclosed. The method comprises steps of: using a plotter to patterning a first conductive polymer such as PEDOT on a thin layer of anode such as PEDOT/PSS, spin-coating a second polymer such as MEH-PPV on top of the pattern; and evaporating a cathode such as Aluminium.

SOLUTION PROCESSING

A method for forming on a substrate an electronic device including an electrically conductive or semiconductive material in a plurality of regions, the operation of the device utilising current flow from a first region to a second region, the method comprising: forming a mixture by mixing the material with a liquid; forming on the substrate a confinement structure including a first zone in a first area of the substrate and a second zone in a second area of the substrate, the first zone having a greater repellence for the mixture than the second zone, and a third zone in a third area of the substrate spaced from the second area by the first area, the first zone having a greater repellence for the mixture than the third zone, and depositing the material on the substrate by applying the mixture over the substrate whereby the deposited material may be confined by the relative repellence of the first zone to spaced apart regions defining the said first and second regions of the device and being ...

METHOD OF FABRICATION OF ELECTRONIC DEVICES USING MICROFLUIDIC CHANNELS

A structure and method of using microfluidic channels to form an array of semiconductor devices is described. The microfluidic channels have been found to be particularly useful when formed in a self aligned process and used to interconnect a series of thin film transistor (TFT) devices.

ORGANIC SENSOR DEVICE AND ITS APPLICATIONS

The invention is characterised in that it has a layer of organic material sensitive to changes in pressure, voltage, deformation, gases and/or temper ature; wherein said organic layer consists of at least one conductive salt o r complex including a molecule A and a dopant D, said molecule A being an el ectron donor or acceptor organic molecule or macromolecule capable of formin g a conductive salt or complex, which without doping is not conductive, and with the presence of dopant D becomes a compound that is donor or acceptor o f electrons and capable of forming conductive salt or complex with the molec ule or macromolecule A; and a base substrate, in close contact with said lay er of organic material. The sensor device is useful in molecular electronics or plastic electronics, in particular, in the field of organic sensors. ...

CONNECTION METHOD FOR A FLEXIBLE ELECTRONIC DEVICE TO AN ELECTRICAL WIRE

L'invention concerne un procédé de raccordement d'un dispositif électronique organique flexible à un fil électrique (2), le procédé comportant les étapes de : - fourniture d'un dispositif électronique flexible, - fourniture d'un fil électrique (2), - fourniture d'un organe de contact (3) comportant au moins un élément conducteur (30) comprenant une face de contact (321), la face de contact (321) définissant une surface de contact, - incision du film barrière d'encapsulation définissant une surface d'incision présentant une dimension maximale et une dimension minimale, la dimension maximale de la surface d'incision étant strictement inférieure à la dimension maximale de la surface de contact, et - assemblage de l'élément conducteur (30) et de la bande conductrice (1) à travers l'incision pour assurer une conduction électronique entre l'élément conducteur (30) et l'électrode.

LIGHTING APPARATUS USING ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THEREOF

Semiconductor device and manufacturing method thereof

The present invention relates to a semiconductor device and a manufacturing method thereof. It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.

Sandwich-structured memory device and preparation method thereof

Preparation method and application of ultra-clean interface heterojunction

Vertical interconnect for organic electronic devices

A device (22) includes a plurality of organic electronic devices disposed on a substrate (24), wherein each of the organic electronic devices comprises a first electrode (26) and a second electrode (32). Furthermore, the device (22) includes an organic layer (28) disposed between the first and second electrodes (26, 32) of each of the plurality of organic electronic devices. Additionally, the device (22) includes an interconnect element (30), wherein the interconnect element (30) is configured to electrically couple the respective first and second electrodes (26, 32) of each of the plurality of organic electronic devices.

涉及聚合物的方法

... 本发明提供了一种使导电聚合物变成基本不导电的方法，其中使聚合物与电解液直接电接触。此外，使用至少两个与电源相连的电极将电压施加到所述聚合物上，每个电极独立地与所述聚合物和电解液之一电接触。通过电化学反应使该导电聚合物变成不导电，所述电化学反应随所述电压而发生在该聚合物和该电解液之间的界面上。 ...

制造有机场致发光显示板的方法

... 一种制作有机EL显示板的方法，所述显示板能在不采用荫罩并且还使有源EL单元不曝露于由光致抗蚀剂溶液或显影和洗提溶液产生的各种溶剂中的情况下形成象素的制作方法。该方法包括步骤：(1)在透明基片上依次形成第一电极层和绝缘层；(2)通过单束或多束激光束在预定区域中除去所述绝缘层；(3)在包括所述绝缘层在内的预定表面上，依次形成有机功能层和第二电极层；以及(4)一次或多次地重复步骤(2)和(3)。 ...

METHOD FOR PATTERNING A COATING ON A SURFACE AND DEVICE INCLUDING A PATTERNED COATING

MANUFACTORING PROCESS Of a DEVICE OLED

ELECTRONICS COMPONENT, MANUFACTORING PROCESS AND USE OF GRAPHENE IN AN ELECTRONICS COMPONENT

OLED SUPPORTED TRANSPARENT ELECTRODE

La présente invention concerne une électrode transparente supportée pour OLED, comprenant, successivement (i) un substrat transparent en verre minéral, (ii) une couche diffusante formée d'un émail haut indice contenant au moins 30 % en poids de Bi2O3, (iii) une couche barrière d'au moins un oxyde métallique diélectrique choisi dans le groupe constitué de Al2O3, SiO2, TiO2, ZrO2 et HfO2 déposée par ALD, (iv) une couche d'un oxyde conducteur transparent (TCO). Elle concerne également un procédé de fabrication d'une telle électrode et une OLED comprenant une telle électrode.

FABRICATING A GATE BY [...] SILVER

La présente invention concerne un procédé de fabrication d'une électrode pour OLED, comprenant les étapes successives suivantes : (a) dépôt, sur un substrat transparent, d'un film métallique constitué d'argent ou d'un alliage d'argent ayant une épaisseur comprise entre 35 et 70 nm, de préférence entre 45 et 65 nm ; (b) chauffage du substrat recouvert du film métallique à une température comprise entre 200 °C et 400 °C, pendant une durée au moins égale à 5 minutes, de préférence comprise entre 20 et 60 minutes, de manière à obtenir le démouillage du film métallique et la formation d'une grille métallique aléatoire sur le substrat transparent; (c) recouvrement du substrat transparent et de la grille métallique aléatoire avec une couche continue d'un matériau conducteur transparent.

METHOD OF SYNTHESIZING NANOCOMPOSITES TIO2 AND OF CARBON NANOSTRUCTURES.

L'invention concerne un composé nanocomposite comportant des nanoparticules de TiO2 fixées sur des nano structure s de carbone, caractérisé en ce qu'il comprend les étapes suivantes : d) Mélanger dans un premier liquide, pour former une suspension mère, des nanostructures de carbone et au moins un précurseur de TiO2, e) Nébuliser ladite suspension mère et la transporter par un flux gazeux dans une chambre de réaction, f) Réaliser une pyrolyse laser de ladite suspension mère dans ladite chambre de réaction pour simultanément former des nanoparticules de TiO2 et les greffer aux nanostructures.

ORGANIC LIGHT EMITTING DEVICE

evaporation apparatus for inorganic material layer of organic material display

Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same

금속 박막 기판 및 이의 제조방법

... 본 발명은 금속 박막 기판 및 이의 제조방법에 관한 것으로, 상세하게는 배향성을 가지는 기판; 및 상기 기판 상에 형성되는 금속박막;을 포함하되, 상기 금속 박막은 초기 성장 시에 상기 기판의 배향성에 상응하는 배향성을 갖도록 형성된 것을 특징으로 하는 금속 박막 기판에 관한 것으로, 본 발명에 의한 금속 박막 기판은 성장초기부터 2차원 연속 박막으로 성장되며 광투과율 및 전도성이 우수한 금속 박막을 제공하는 효과가 있다.

Organic thin film transistor and flat display apparatus comprising the same

ORGANIC THIN FILM TRANSISTOR AND METHOD OF MAKING THEM

적어도 1개의 벤조[C][1,2,5]티아디아졸-5,6-디카르보니트릴-단위를 포함하는 중합체의 제조

... 본 발명은 화학식 5의 화합물 (여기서, Y2는 I, Br, Cl 또는 O-S(O)2CF3임)을 S-공여자로 처리하여 화학식 4의 화합물 (여기서, Y2는 화학식 5의 화합물에 대하여 정의된 바와 같음)을 수득하는 단계 (v)를 포함하는, 화학식 1의 적어도 1개의 단위를 포함하는 중합체의 제조 방법, 화학식 4의 화합물의 제조 방법 및 화학식 4의 화합물을 제공한다.

SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE

CONDUCTIVE PATTERN AND DISPLAY DEVICE HAVING SAME

A conductive pattern for preventing reaction with an organic film may include an insulating film; a first conductive layer provided on the insulating film and including at least a first sub-conductive layer; and a second conductive layer provided between the insulating film and the first conductive layer. The second conductive layer may include metallic nitride. COPYRIGHT KIPO 2018 ...

DYE-SENSITIZED SOLAR CELL

ELECTRONIC DEVICE, MANUFACTURING DEVICE THEREOF, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

Provided is an electronic device including a conductive pattern with improved bending properties. A manufacturing device of the electronic device comprises: a stage for supporting a substrate; a target rotor arranged on the substrate, extended along one direction, and supplying different first and second deposition materials to the substrate; and a chamber for receiving the stage and the target rotor. The target rotor includes: a first target unit positioned in a first area extended along the one direction of the target rotor, and supplying the first deposition material; and a second target unit connected to the first target unit, positioned in a second area adjacent to the first area of the target rotor, and supplying the second deposition material. COPYRIGHT KIPO 2017 ...

SUBSTRATE IN WHICH TRANSPARENT CONDUCTIVE LAYER IS EMBEDDED, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE USING SAME

The present invention relates to a substrate in which a transparent conductive layer is embedded, a manufacturing method thereof, and an electronic device using the same. The transparent conductive layer composed of a metal nanowire is embedded in a flexible substrate to be used as a transparent electrode of the electronic device. The transparent conductive layer according to the present invention has high transmittance, high electrical conductivity, and high flexibility in comparison with conventional ITO. The transparent conductive layer is embedded in the substrate, thereby preventing an adhesion failure with the substrate and simplifying a process. COPYRIGHT KIPO 2018 (S110) Manufacturing a solution for a flexible substrate by adding a metal nanowire to a solvent (S120) Manufacturing a flexible substrate by coating the solution for a flexible substrate (S130) Forming a transparent conductive layer by depositing the metal nanowire in a lower part of the flexible substrate through a curing ...

유기 ＥＬ 패널 및 그 제조방법

... 본 발명에 따르면 발광휘도의 불균일을 억제한 좁은 외측영역의 유기 EL 패널을 제공할 수 있다. 외부전원으로부터 공통배선으로 급전되는 투광성의 제1 전극(20)과, 제2 전극(20)과 쌍을 이루는 제2 전극(60)과, 적어도 발광층을 갖는 유기층(50)을 제1 전극(20)과 제2 전극(60) 사이에 끼인 유기 EL 소자를 투광성의 지지기판(10)상에 설치하고, 유기 EL 소자를 기밀적으로 덮는 밀봉부재(70)를 설치하며, 제1 전극(20)상에 제1 전극(20)보다 저항률이 낮은 보조전극(30)을 형성하고, 밀봉부재(70) 중 적어도 일부에 홈부(74)를 설치하며, 홈부(74)에 도전성 재료로 이루어진 보조 도전부(90)를 배치한다.

BILAYER ANODE

There is provided a bilayer anode having two layers. The first layer includes conductive nanoparticles and the second layer includes a semiconductive material having a work function greater than 4.7 eV. © KIPO & WIPO 2008 ...

PHOTORESIST COMPOSITION FOR FORMING INSULATION FILM, INSULATION FILM FOR ORGANIC ELECTROLUMINESCENCE ELEMENT AND METHOD FOR ITS FORMATION

A photoresist composition for forming an insulation film which comprises (A) an alkali-soluble resin, (B) a qunonediazidosulfonic acid ester and (C) a thermosetting component, and can provide a film having a shape whose side faces are inclined in a skirt form which shape is suitable for an insulating film for an organic electroluminescence element; an insulating film for an organic electroluminescence element having roundish upper edge portions which is prepared by forming a resist film on a substrate using the photoresist composition and then subjecting the resist film to a heat treatment; and a method for forming an insulating film on a substrate by the photolithography which comprises using the photoresist composition. © KIPO & WIPO 2007 ...

ELECTRODE SUBSTRATE, THIN-FILM TRANSISTOR, DISPLAY, AND ITS PRODUCTION METHOD

Using a lower electrode as a photomask, a yophobic region having generally the same pattern as that of the lower electrode and a yophibic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the yophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method. © KIPO & WIPO 2007 ...

CONDUCTIVE POLYMER, POLYMER COMPOSITION, FILM AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING SAME

Disclosed are a conductive polymer, a conductive polymer composition, a conductive polymer organic film, and an organic photoelectric device including the same.

Method of producing a film

A method of producing a film (1) is described. The film may be suitable for use as a plasmon-active electrode in a photovoltaic device. The method comprises forming on a substrate (2) at least one binding layer (3), depositing a metallic layer (4) that binds to the binding layer, and heating the metallic layer so as to produce therein a plurality of apertures (5) each having a diameter of less than 300 nm, wherein the metallic layer after the heating has a sheet resistance of no more than twice the metallic layer before the heating.

Evaporation source, vacuum vapor deposition device and manufacturing method for organic electroluminescent display device

To provide an evaporation source, a vacuum vapor deposition device and a manufacturing method for organic electroluminescent display device for continuously forming film and capable of reducing thermal radiation, using a power-saving evaporation source, high speed forming a metal film, which is mainly made of aluminum material, corresponding to a large substrate. To utilize a ceramic crucible as an evaporation source, and arrange a heat reflective component by clamping a flange section, so as to effectively block heat flowing out along the flange section. Therefore, the present invention can effectively heat the crucible with little electricity, and prevent the flange section from temperature rise.

Method of fabricating an organic device

A method of fabricating an organic device is provided. A first layer is deposited over a substrate through a mask by a first process that results in the first layer having a first area of coverage. A second layer is then deposited over the substrate through the mask by a second process that results in the second layer having a second area of coverage that is different from the first area of coverage.

Organic electronic devices having two dimensional series interconnections

ORGANIC LIGHT EMITTING DIODES WITH STRUCTURED ELECTRODES

A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.

METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE

A highly reliable light-emitting device is provided. A light-emitting device in which problems due to a metal mask are prevented is provided. A light-emitting device in which a problem due to the resistance of an upper electrode layer of a light-emitting element is prevented is provided. An electrode layer is provided over a substrate in advance, and an EL layer and an upper electrode layer are formed in the same pattern without use of a metal mask so as to overlap with the electrode layer. After that, the electrode layer is electrically connected to the upper electrode layer. As a connection method, a laser light irradiation method, a method in which physical pressure is applied, a method in which heating is performed under the state where physical pressure is applied, or the like is used.

TRANSPARENT PLATE WITH TRANSPARENT CONDUCTIVE FILM AND ORGANIC ELECTROLUMINESCENT DEVICE

Disclosed is a transparent plate with a transparent conductive film used for organic electroluminescent devices, which is characterized by comprising a transparent plate main body and a transparent conductive film formed on the surface of the transparent plate main body. The transparent plate with a transparent conductive film is also characterized in that when the refractive index of the transparent conductive film is represented by n1 and the refractive index of the transparent plate main body is represented by n2, n1 and n2 satisfy the following formula (1): (1) , and the transparent conductive film has a visible light transmittance of not less than 80%, a volume resistivity of not more than 1 Ω cm and a surface roughness of not more than 100 nm.

EMBOSSING PRINTING FOR FABRICATION OF ORGANIC FIELD EFFECT TRANSISTORS AND ITS INTEGRATED DEVICES

A method of fabricating an organic field effect transistor (OFET) comprises forming at least one OFET structure by ultraviolet (UV) transfer embossing printing. In an example embodiment, the method includes providing ink material (102) on at least part of a patterned surface (100a, 100b) of a mold (100). The mold (100) is then contacted on a coating of ultraviolet (UV) curable resin (108) on a substrate (104) so as to insert at least part of the ink material (102) into the resin (108). The resin (108) is then irradiated with UV light, and the mold (100) is separated from the resin (108) so as to transfer the ink material (102) onto the substrate (104) to form at least one OFET structure.

DYE-SENSITIZED SOLAR CELL

Disclosed is a dye-sensitized solar cell characterized by comprising an electrode having, on one side thereof, a semiconductor layer loaded with a sensitizing dye, a counter electrode so arranged as to face the semiconductor layer, and a charge-transporting layer arranged between the electrode and the counter electrode. The dye-sensitized solar cell is also characterized in that at least one of the electrode and the counter electrode is composed of a transparent conductive film wherein an ITO film and an FTO film are laminated, and a part or all of the surface of the FTO film has a orthorhombic crystal structure.

METHOD FOR PRODUCTION OF A FILM

The invention relates to a film (66) with at least one electrical component and a method for production of such a film. An adhesive layer of a radiation-curing adhesive is applied to a base film (61). The adhesive is applied to the base film in the structured form of a pattern and/or is irradiated according to a pattern, such that the adhesive hardens in a structured form, according to the pattern. A transfer film (41) is applied to the adhesive layer, comprising a support film and an electrical functional layer. The support film (41) is removed from the base film, the adhesive layer and the film body, comprising the electrical functional layer, whereby the electrical functional layer remains on the base film (61) in a first region, structured in the form of a pattern and, in a second region, structured in the form of a pattern, the electrical functional layer remains on the support film and is removed with the support film from the base film (61).

ELECTRONIC DEVICES

A method for forming an electronic device in a multilayer structure comprising the steps of: defining a topographic profile in a laterally extending first layer; depositing at least one non-planarizing layer on top of the first layer such that the topographic profile of the surface of the or each non-planarizing layer conforms to that of the laterally extending first layer; and depositing a pattern of at least one additional layer onto the top-most non-planarizing layer, such that the lateral location of the additional layer is defined by the shape of the topographic profile of the non-planarizing layer, and whereby the additional layer is laterally aligned with the topographic profile in the first layer.

IN SITU PATTERNING OF ELECTROLYTE FOR MOLECULAR INFORMATION STORAGE DEVICES

This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a is provided that involves contacting a surface/electrode with a compound if formula: R-L2-M-L1-Z1 where Z1 is a surface attachment group; L1and L2 are independently linker or covalent bonds; M is an information storage molecule; and R is a protected or unprotected reactive site or group; where the contacting results in attachment of the redox-active moiety to the surface via the surface attachment group; and ii) contacting the surface-attached information storage molecule with an electrolyte having the formula: J-Q where J is a charged moiety (e.g., an electrolyte); and Q is a reactive group that is reactive with the reactive group (R) and attaches J to the information storage molecule thereby patterning the electrolyte on the surface.

IN SITU PATTERNING OF ELECTROLYTE FOR MOLECULAR INFORMATION STORAGE DEVICES

This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a is provided that involves contacting a surface/electrode with a compound if formula: R-L2-M-L1-Z1 where Z1 is a surface attachment group; L1and L2 are independently linker or covalent bonds; M is an information storage molecule; and R is a protected or unprotected reactive site or group; where the contacting results in attachment of the redox-active moiety to the surface via the surface attachment group; and ii) contacting the surface-attached information storage molecule with an electrolyte having the formula: J-Q where J is a charged moiety (e.g., an electrolyte); and Q is a reactive group that is reactive with the reactive group (R) and attaches J to the information storage molecule thereby patterning the electrolyte on the surface.

HIGHLY TRANSPARENT NON-METALLIC CATHODES

A novel class of low reflectivity, high transparency, non-metallic cathodes (1) useful for a wide range of electrically active, transparent organic devices is disclosed. As a representative embodiment, the highly transparent non-metallic cathode (1) of an OLED employes a thin film of copper phthalocyanine (CuPc) (6) capped with a film of low-power, radio-frequency sputtered indium-tin-oxide (ITO). The CuPc prevents damage to the underlying organic layers during the ITO sputtering process. Due to the low reflectivity of the non-metallic cathode, a non-antireflection-coated, non-metallic-cathode-containing TOLED is disclosed that is 85 % transmissive in the visible, emitting nearly identical amounts of light in the forward and back-scattered directions.

HIGHLY TRANSPARENT NON-METALLIC CATHODES

A novel class of low reflectivity, high transparency, non-metallic cathodes (1) useful for a wide range of electrically active, transparent organic devices is disclosed. As a representative embodiment, the highly transparent non-metallic cathode (1) of an OLED employes a thin film of copper phthalocyanine (CuPc) (6) capped with a film of low-power, radio-frequency sputtered indium-tin-oxide (ITO). The CuPc prevents damage to the underlying organic layers during the ITO sputtering process. Due to the low reflectivity of the non-metallic cathode, a non-antireflection-coated, non-metallic-cathode-containing TOLED is disclosed that is 85 % transmissive in the visible, emitting nearly identical amounts of light in the forward and back-scattered directions.

INKJET-FABRICATED INTEGRATED CIRCUITS

A method for forming an integrated circuit including at least two interconnected electronic switching devices, the method comprising forming at least part of the electronic switching devices by ink-jet printing.

PATTERNING METHOD

A method of patterning a flowable material on a surface, the method comprising providing the surface with at least one channel and at least one through- hole with at least two openings, wherein at least one of the openings is located in the surface adjacent to the at least one channel, such that when flowable material is deposited adjacent to another of the at least two openings, the material is directed into the at least one through-hole by the action of capillary forces and emerges at the opening adjacent to the at least one channel whereupon it is further directed along said channel.

Thin Film Transistor Sensor and Manufacturing Method Thereof

Provided are a thin film transistor sensor and a manufacturing method thereof. The thin film transistor sensor includes a first substrate and a second substrate opposite to each other, the first substrate includes a first flexible base substrate and a first gate electrode disposed on the first flexible base substrate, and the second substrate includes a second flexible base substrate and a second gate electrode 4 disposed on the second flexible base substrate; the second gate electrode is at least partially overlapped with and separated from the first gate electrode and configured to be electrically connected to the first gate electrode after the thin film transistor sensor is applied with a voltage, such that the thin film transistor sensor is turned on.

Electrically conducting organic polymer/nanoparticle composites and methods for use thereof

Compositions are provided comprising aqueous dispersions of electrically conducting organic polymers and a plurality of nanoparticles wherein pH can be adjusted for improved organic electronic device performance. Films deposited from invention compositions are useful as buffer layers in electroluminescent devices, such as organic light emitting diodes (OLEDs) and electrodes for thin film field effect transistors. Buffer layers containing nanoparticles may have a much lower conductivity than buffer layers without nanoparticles. In addition, when incorporated into an electroluminescent (EL) device, buffer layers according to the invention contribute to higher stress life of the EL device.

Anode for an organic electronic device

There is provided an anode for an organic electronic device. The anode is a conducting inorganic material having an oxidized surface layer. The surface layer is non-conductive and hole-transporting.

System for producing patterned deposition from compressed fluid in a partially opened deposition chamber

A system (10) produces patterned deposition on a substrate (14) from supercritical fluids. A delivery system (12) cooperates with a partial enclosure environment (30, 100, 200) retaining a movable substrate (14) for receiving precipitated functional material (44) along a fluid delivery path (13) from the delivery system (12). A shadow mask (22) is arranged in close proximity to the movable substrate (14) for forming the patterned deposition on the movable substrate (14).

Polymeric conductor donor and transfer method

The present invention relates to a donor laminate for transfer of a conductive layer comprising at least one electronically conductive polymer on to a receiver, wherein the receiver is a component of a device. The present invention also relates to methods pertinent to such transfers.

DISPLAY DEVICE

A display device according to embodiments includes: a display panel that includes a display area that includes a partition layer that includes a first opening through which light is emitted from an organic light emitting diode and a peripheral area around the display area; a touch electrode disposed on the display panel a touch electrode passivation layer that covers the touch electrode and includes a second opening that corresponds to the first opening; and a high refractive index layer that covers the touch electrode passivation layer and the second opening. The touch electrode passivation layer includes an open region formed in a portion that corresponds to the peripheral area, and the touch electrode passivation layer is not formed in the open region.

Method of integrating organic light emitting diode and organic field effect transistor

Provided is a method of integrating an organic light emitting diode (OLED) and an organic field effect transistor (OFET) including: preparing an organic field effect transistor including at least one first electrode and an organic semiconductor on a first substrate; preparing an organic light emitting diode including at least one second electrode and an organic emission layer on a second substrate; disposing the OFET and the OLED to make the first and second electrodes opposite to each other; inserting an insulating layer, to which a predetermined metal contact line for electrically connecting the first and second electrodes is securely fixed, between the OFET and the OLED; and adhering the OFET and the OLED to integrate them as one device, whereby it is possible to effectively perform active driving, to extend a lifetime due to a high aperture ratio, and to produce the device using a simple process at a low cost.

ORGANIC LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

An exemplary embodiment of the present invention provides a method for preparing an organic light-emitting device, comprising the steps of: 1) forming a spacer pattern on a first electrode formed on a substrate; 2) forming an organic material layer and a second electrode; 3) exposing the first electrode by forming an encapsulation thin film and then etching at least one portion of the encapsulation thin film; and 4) forming an auxiliary electrode which is electrically connected to the first electrode exposed in the step 3). The organic light-emitting device according to the exemplary embodiment of the present invention may solve problems of a voltage drop due to resistance of a transparent electrode in a longitudinal direction and of resultant brightness non-uniformity of the diode. 1. A method for preparing an organic light-emitting device , comprising the steps of:1) forming a spacer pattern on a first electrode formed on a substrate;2) forming an organic material layer and a second electrode;3) exposing the first electrode by forming an encapsulation thin film and etching at least one portion of the encapsulation thin film; and4) forming an auxiliary electrode which is electrically connected to the first electrode exposed in the step 3).2. The method for preparing an organic light-emitting device according to claim 1 , wherein the step 1) further comprises forming an insulation layer pattern on the substrate.3. The method for preparing an organic light-emitting device according to claim 1 , wherein the substrate in the step 1) is a glass substrate or a plastic substrate.4. The method for preparing an organic light-emitting device according to claim 1 , wherein the first electrode in the step 1) comprises one or more selected from the group consisting of metal claim 1 , metal oxide and an alloy thereof.5. The method for preparing an organic light-emitting device according to claim 4 , wherein the first electrode in the step 1) is formed by a PVD (physical vapor ...

Optoelectronic Device Having an Elastic Electrode

The present disclosure relates to an optoelectronic device, in particular to an arrangement for contacting an optoelectronic device. The optoelectronic device () includes an elastic electrode (). A method for forming the elastic electrode () is described. 1. An optoelectronic device comprising:a support;a conducting layer arranged on the support;an active layer connected to the conducting layer;an encapsulation capping, covering the active layer and attached to the support;a layer gap formed between the support and the encapsulation capping; andan elastic electrode arranged in the layer gap and contacting the conducting layer,whereby the portion of the elastic electrode which protrudes outside from the gap serves as external electric connection.2. The optoelectronic device of claim 1 , the elastic electrode comprising an elastomer.3. The optoelectronic device of claim 1 , the elastic electrode comprising conductive particles dispersed in an elastic matrix material.4. The optoelectronic device of claim 2 , the elastic electrode comprising an conductive elastomer.5. The optoelectronic device of claim 1 , the active area comprising an organic luminescent material.6. The optoelectronic device of claim 1 , comprising a light emitting surface defined by the support and/or the encapsulation capping.7. The optoelectronic device of claim 1 , the support being formed as a rigid support.8. The optoelectronic device of claim 1 , the encapsulation capping being attached by an attaching member to the support.9. The optoelectronic device of claim 8 , the attaching member comprising at least one of the following:a glue;a solder ball ora glass frit.10. A method of forming an electrode of an electronic panel device comprising:providing an electronic panel device having a conductive layer and a layer gap, the conductive layer reaching into the layer gap;applying an conductive elastomer in a liquid phase on the layer gap;curing the conductive elastomer.11. The method of comprising: ...

Method of Making a Flexible Optoelectronic Device Having Inverted Electrode Structure

A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer. 1. A method of making a flexible optoelectronic device having inverted electrode structure , comprising:providing a flexible plastic substrate having a cathode structure;forming an n-type oxide semiconductor layer on said cathode structure;forming an organic layer on said n-type oxide semiconductor layer; andforming an anode on said organic layer.2. The method of making a flexible optoelectronic device according to claim 1 , wherein the material of said n-type oxide semiconductor layer comprises at least one material or any combination selected from the group consisting of: tungsten oxide claim 1 , titanium oxide claim 1 , and zinc oxide.3. The method of making a flexible optoelectronic device according to claim 1 , wherein the forming method of said n-type oxide semiconductor layer comprises:providing a suspension having a plurality of micro/nano n-type transition metal oxide structures; andperforming a coating process for coating said suspension on the surface of said cathode structure for forming an n-type oxide semiconductor layer on said cathode structure, said n-type oxide semiconductor layer composed of stacked micro/nano n-type transition metal oxide structures, wherein said n-type oxide semiconductor layer is un-annealed.4. The method of making a flexible optoelectronic device according to claim 3 , wherein each ml of said suspension comprises 0.01-100 mg of said micro/nano n-type transition metal oxide structures.5. The method of making a flexible optoelectronic device ...

CONDUCTIVE ELEMENTS IN ORGANIC ELECTRONIC DEVICES

A technique comprising: forming a conductive element of an electronic device on a portion of the surface of a first organic layer, applying a second organic layer over said conductive element and said first organic layer, and then treating at least one of the first and second organic layers to increase the strength of adhesion between said first and second organic layers. Thereby the retention of said conductive element on said first organic layer is improved. 1. A method comprising: forming a conductive element of an electronic device on a portion of the surface of a first organic layer , applying a second organic layer over said conductive element and said first organic layer , and then treating at least one of the first and second organic layers to increase the strength of adhesion between said first and second organic layers and thereby improve the retention of said conductive element on said first organic layer.2. A method according to claim 1 , wherein said conductive element is a metal element.3. A method according to claim 2 , wherein forming said metal element includes patterning a deposit of metal through the direct absorption of laser energy and evaporation of metal at selected regions of said deposit.4. A method according to claim 2 , wherein said metal is a noble metal element.5. A method according to claim 4 , wherein said noble metal element is gold.6. A method according to claim 1 , wherein the conductive element forms part of a conductive pattern claim 1 , and wherein the density of coverage of the conductive pattern is no more than 90% for any 1 mm×1 mm unit area.7. A method according to claim 6 , wherein the conductive element forms part of a conductive pattern claim 6 , and wherein the density of coverage of the conductive pattern is no more than 50% for any 1 mm×1 mm unit area.8. A method according to claim 1 , wherein the second organic layer exhibits better chemical barrier properties than the first organic layer.9. A method according to claim ...

METHOD FOR MANUFACTURING AN OLED DEVICE

The subject of the invention is a process for manufacturing an organic light-emitting diode device comprising at least one electrode based on an electrically conductive thin-film multilayer deposited on a substrate, in which the deposition of said multilayer comprises the following steps: 1. A process for manufacturing an organic light-emitting diode device comprising an electrode comprising an electrically conductive thin-film multilayer deposited on a substrate , the process comprising:depositing a thin-film multilayer comprising a thin silver film between at least two thin films on one face of the substrate, to obtain a coated face on the substrate; andheat treating the coated face of the substrate with a source of laser radiation emitting a wavelength from 500 to 2000 nm, such that the sheet resistance of the multilayer decreases by at least 5%.2. The process of claim 1 , wherein claim 1 , prior to the heat treatment claim 1 , the multilayer comprises a thin film that at least partially absorbs the laser radiation such that the absorption of the multilayer at the wavelength of the laser radiation is such that the absorption of a clear glass substrate 4 mm in thickness coated with the multilayer at the wavelength of the laser radiation is greater than or equal to 10%.3. The process of claim 1 , wherein the temperature of the face of the substrate opposite the face treated by the source of laser radiation does not exceed 100° C. during the heat treatment.4. The process of claim 1 , wherein the heat treatment decreases the sheet resistance of the multilayer by at least 15%.5. The process of claim 1 , wherein the substrate comprises glass or a polymeric organic substance.6. The process of claim 5 , wherein the substrate comprises polyethylene terephthalate or polyethylene naphthalate.7. The process of claim 2 , wherein the thin film that at least partially absorbs the laser radiation is a metallic film deposited directly on top of the silver film or directly beneath ...

METHOD OF PREPARING TRANSPARENT CONDUCTING OXIDE FILMS

The present invention discloses a method of preparing a transparent conducting oxide (TCO) film comprising the steps of: applying surface modified TCO nanoparticles onto a surface of a substrate; and cross-linking the surface modified TCO nanoparticles. The present invention also provides a transparent conducting oxide film prepared according to the method. 1. A method of preparing a transparent conducting oxide (TCO) film , comprising:reacting TCO nanoparticles with at least one unsaturated moiety to provide surface modified TCO nanoparticles;applying the surface modified TCO nanoparticles onto a surface of a substrate; andcross-linking the surface modified TCO nanoparticles.2. (canceled)3. The method according to claim 1 , wherein the reacting comprises heating the TCO nanoparticles with the unsaturated moiety.4. The method according to claim 3 , wherein the heating is carried out at a temperature of 50-250° C.5. The method according to claim 1 , wherein the TCO nanoparticles comprise at least one dimension of size ≦200 nm.6. (canceled)7. The method according to claim 1 , wherein the unsaturated moiety is a moiety which comprises one or more pi-bond.8. The method according to claim 7 , wherein the unsaturated moiety is selected from the group consisting of: optionally substituted alkene claim 7 , alkyne and diene.10. The method according to claim 9 , wherein the aliphatic species is CH— claim 9 , the aromatic species is CH— claim 9 , or the halide is Cl.11. The method according to claim 9 , wherein each R1 and R2 is the same and is H.13. The method according to claim 12 , wherein the aliphatic species is CH— claim 12 , the aromatic species is CH— claim 12 , or the halide is Cl.14. The method according to claim 12 , wherein each R3 claim 12 , R4 claim 12 , R5 claim 12 , R6 claim 12 , R7 and R8 is the same and is H.15. The method according to claim 1 , wherein the unsaturated moiety is acetylene claim 1 , ethylene claim 1 , butadiene or a combination thereof.16. The ...

ELECTRODE BODY FOR SOLAR CELL, METHOD FOR PRODUCING THE ELECTRODE BODY, AND SOLAR CELL PROVIDED WITH THE ELECTRODE BODY

Disclosed is an electrode body for a solar cell, which is capable of being used as a component of both an organic thin-film solar cell and a dye-sensitized solar cell, and has excellent heat resistance. This electrode body for a solar cell is provided with a substrate with a conductive part at least on the surface and a conductive polymer layer located on the conductive part of the substrate, in which the conductive polymer layer includes: a polymer derived from at least one monomer selected from the group consisting of 3,4-disubstituted thiophenes; and an anion as a dopant to the polymer generated from at least one organic non-sulfonate compound having an anion with the molecular weight of 200 or more. Additionally, the density of the conductive polymer layer is in the range of 1.15 to 1.80 g/cm. The dense conductive polymer layer including the anion as a dopant exhibits excellent heat resistance. 114-. (canceled)15. An electrode body for a solar cell comprising a substrate with a conductive part at least on the surface and a conductive polymer layer located on the conductive part of the substrate , wherein the conductive polymer layer comprises:a polymer derived from at least one monomer selected from the group consisting of 3,4-disubstituted thiophenes; and{'sup': '3', 'an anion as a dopant to the polymer generated from at least one organic non-sulfonate compound having an anion with the molecular weight of 200 or more, and the density of the conductive polymer layer is within the range of 1.15 to 1.80 g/cm.'}16. The electrode body for a solar cell according to claim 15 , wherein the density of the conductive polymer layer is within the range of 1.60 to 1.80 g/cm.17. The electrode body for a solar cell according to claim 15 , wherein the thickness of the conductive polymer layer is within the range of 1 to 2000 nm.18. The electrode body for a solar cell according to claim 15 , wherein the organic non-sulfonate compound is at least one compound selected from the ...

ELECTRODE BODY FOR SOLAR CELL, METHOD FOR PRODUCING THE ELECTRODE BODY, AND SOLAR CELL PROVIDED WITH THE ELECTRODE BODY

Disclosed is an electrode body for a solar cell, which is capable of being used as a component of both an organic thin-film solar cell and a dye-sensitized solar cell, and has excellent heat resistance. This electrode body for a solar cell is provided with a substrate with a conductive part at least on the surface and a conductive polymer layer located on the conductive part of the substrate, in which the conductive polymer layer includes: a polymer which is obtained by polymerizing a monomer selected from the group consisting of 3,4-disubstituted thiophenes; and an anion as a dopant to the polymer generated from at least one organic non-sulfonate compound having an anion with the molecular weight of 200 or more. Since the anion of the organic non-sulfonate compound is included as a dopant in the conductive polymer layer, the heat resistance of the conductive polymer layer is improved. 112.-. (canceled)13. An electrode body for a solar cell comprising a substrate with a conductive part at least on the surface and a conductive polymer layer located on the conductive part of the substrate , wherein the conductive polymer layer comprises:a polymer derived from at least one monomer selected from the group consisting of 3,4-disubstituted thiophenes; andan anion as a dopant to the polymer generated from at least one organic non-sulfonate compound having an anion with the molecular weight of 200 or more.14. The electrode body for a solar cell according to claim 13 , wherein the organic non-sulfonate compound is at least one compound selected from the group consisting of borodisalicylic acid and borodisalicylic salts.16. The electrode body for a solar cell according to claim 15 , wherein the organic non-sulfonate compound is a salt of bis(pentafluoroethanesulfonyl)imidic acid.17. The electrode body for a solar cell according to claim 13 , wherein the monomer is 3 claim 13 ,4-ethylenedioxythiophene.18. The electrode body for a solar cell according to claim 13 , wherein the ...

Transparent conductive oxide thin film substrate, method of fabricating the same, and organic light-emitting device and photovoltaic cell having the same

A transparent conductive oxide thin film substrate that has a high level of surface flatness, a method of fabricating the same, and an OLED and photovoltaic cell having the same. The transparent conductive oxide thin film substrate that includes a base substrate, a first transparent conductive oxide thin film formed on the base substrate, the first transparent conductive oxide thin film being treated with a first dopant, and a second transparent conductive oxide thin film formed on the first transparent conductive oxide thin film. The second transparent conductive oxide thin film is treated with a second dopant at a higher concentration than the first dopant. The surface of the second transparent conductive oxide thin film is flatter than the surface of the first transparent conductive oxide thin film.

SOLUTION-PROCESSED TRANSITION METAL OXIDES

Embodiments may pertain to methods for preparing a transition metal oxide. 1. A method comprising:combining a peroxide with a solution of an alcohol-based solvent and a transition metal; and2. The method of claim 1 , wherein said peroxide comprises hydrogen peroxide.3. The method of claim 1 , wherein said alcohol-based solvent is ethanol.4. The method of claim 1 , wherein said solution comprises:an amount of said alcohol-based solvent to affect a rate of reaction of said transition metal with said peroxide in combination.5. The method of claim 1 , wherein said transition metal comprises one of the group consisting essentially of vanadium claim 1 , molybdenum claim 1 , tungsten.6. The method of claim 1 , further comprising:drying said solution of said peroxide and said transition metal to form an at least partially dried transition metal oxide.7. The method of claim 6 , further comprising:combining at least one water-free solvent with said at least partially dried transition metal oxide.8. The method of claim 6 , the said drying comprises:creating said at least partially dried transition metal oxide in a vacuum environment.9. The method of claim 6 , further comprising:dispersing said at least partially dried transition metal oxide into a water-free solvent.10. The method of claim 9 , further comprising:forming a transition metal oxide film.11. The method of claim 10 , said forming comprises:spin-coating said dispersed solution onto a substrate to form said transition metal oxide film.12. The method of claim 11 , further comprising:forming an organic device that includes said transition metal oxide film.13. The method of claim 12 , wherein said organic device comprises at least one of an organic light emitting diode claim 12 , an organic solar cell claim 12 , or an organic photodetector.14. The method of claim 10 , wherein said forming comprisesannealing said transition metal oxide film at a temperature approximately between approximately 60.0° C. and approximately ...

METHOD OF MANUFACTURING ORGANIC EL ELEMENT AND ORGANIC EL ELEMENT

A method of manufacturing an organic EL element includes: a first step of forming a lower electrode on a substrate; a second step of forming an organic functional layer on the lower electrode; and a third step of forming an upper electrode on the organic functional layer, wherein the third step includes: a first film-forming step of forming a thin film on the organic functional layer by magnetron sputtering, the thin film being formed of material of the upper electrode; and a second film-forming step of forming, after the first film-forming step, another thin film by a film-forming process different from the magnetron sputtering on the thin film formed in the first film-forming step, said another thin film being formed of the material of the upper electrode. 1. A method of manufacturing an organic EL element comprising:a first step of forming a lower electrode on a substrate;a second step of forming an organic functional layer on the lower electrode; anda third step of forming an upper electrode on the organic functional layer, wherein a first film-forming step of forming a thin film on the organic functional layer by magnetron sputtering, the thin film being formed of material of the upper electrode; and', 'a second film-forming step of forming, after the first film-forming step, another thin film by a film-forming process different from the magnetron sputtering on the thin film formed in the first film-forming step, said another thin film being formed of the material of the upper electrode., 'the third step includes2. The method of claim 1 , whereinthe film-forming process different from the magnetron sputtering is a process to form a thin film having a lower membrane stress than a thin film formed by the magnetron sputtering.3. The method of claim 2 , whereinthe film-forming process different from the magnetron sputtering is selected from a group consisting of facing target sputtering, resistance heating deposition, electron beam deposition, CVD, ion plating and ...

TRANSPARENT ELECTRODE, ELECTRONIC DEVICE, ORGANIC ELECTROLUMINESCENCE ELEMENT, AND METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENCE ELEMENTS

The present invention is made to provide a transparent electrode having both electrical conductivity and light transmissibility, and improve the performance of an electronic device and an organic electroluminescence element. A transparent electrode () includes a nitrogen-containing layer () and an electrode layer () formed adjacent to the nitrogen-containing layer (). The electrode layer () is formed using silver or an alloy having silver as a main component. The nitrogen-containing layer () is composed of a compound that satisfies Formulas (1) and (2).

PHASE-TRANSITION OPTICAL ISOMER COMPOUND, TRANSPARENT ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE TRANSPARENT ELECTROLUMINESCENT DISPLAY DEVICE

A phase-transition optical isomer compound is described, a transparent EL display device including the phase-transition optical isomer compound and a method of fabricating the EL display device, where a phase of the phase-transition optical isomer compound is transited by light irradiation and a second electrode of the EL display device is selectively deposited without a masking process. 3. The phase-transition optical isomer compound according to claim 1 , wherein a difference between a glass temperature in a rubbery phase of the phase-transition optical isomer compound and a glass temperature in a glassy phase of the phase-transition optical isomer compound is between about 100 to 300° C.4. The phase-transition optical isomer compound according to claim 1 , wherein each of R1 to R4 is independently selected from pyridyl and quinolinyl.5. The phase-transition optical isomer compound according to claim 1 , wherein the phase-transition optical isomer compound exhibits a rubbery phase when a visible light is irradiated claim 1 , andwherein the phase-transition optical isomer compound exhibits a glassy phase when a ultraviolet ray is irradiated.6. The phase-transition optical isomer compound according to claim 1 , wherein the phase-transition optical isomer compound has a lowest unoccupied molecular orbital level of −2.6 to −2.1 eV and a highest occupied molecular orbital level of −6.2 to −6.0 eV. This application is a divisional of co-pending U.S. patent application Ser. No. 16/210,151, filed on Dec. 5, 2018, which claims the benefit of Korean Patent Application No. 10-2017-0168574, filed in the Republic of Korea on Dec. 8, 2017. All of the above applications are hereby incorporated by reference in its entirety.The present disclosure relates to an electroluminescent display device, and more particularly, to a phase-transition optical isomer compound capable of selectively depositing a conductive material without a mask process, a transparent electroluminescent display ...

Planar Structure Solar Cell with Inorganic Hole Transporting Material

A method is provided for forming a planar structure solar cell. Generally, the method forms a transparent conductive electrode, with a planar layer of a first metal oxide adjacent to the transparent conductive electrode. For example, the first metal oxide may be an n-type metal oxide. A semiconductor absorber layer is formed adjacent to the first metal oxide, comprising organic and inorganic materials. A p-type semiconductor hole-transport material (HTM) layer is formed adjacent to the semiconductor absorber layer, and a metal electrode is formed. adjacent to the HTM layer. In one aspect, the HTM layer is an inorganic material such as a p-type metal oxide. Some explicit examples of HTM materials include stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, and stoichiometric and non-stoichiometric copper (I) oxide. Also provide are planar solar cell devices. 1. A planar structure solar cell comprising:a transparent substrate;a transparent conductive electrode overlying the transparent substrate;a first metal oxide having a planar top surface and a planar bottom surface overlying the transparent conductive electrode;a semiconductor absorber layer overlying the first metal oxide planar top surface, the semiconductor absorber layer formed from a single material comprising organic and inorganic components;a p-type inorganic semiconductor hole-transport material (HTM) layer overlying the semiconductor absorber layer; and,a metal electrode overlying the HTM layer.2. The solar cell of wherein the first metal oxide is an n-type metal oxide.3. (canceled)4. The solar cell of wherein the first metal oxide is selected from a group consisting of titanium oxide (TiO) claim 1 , tin oxide (SnO) claim 1 , zinc oxide (ZnO) claim 1 , niobium oxide (NbO) claim 1 , tantalum oxide (TaO) claim 1 , barium titanate (BaTiO) claim 1 , strontium titanate (SrTiO) claim 1 , ...

CONDUCTIVE THIN FILM, METHOD FOR PRODUCING SAME, AND ELECTRONIC ELEMENT COMPRISING SAME

Provided are a conductive thin film, a method for producing same, and an electronic element comprising same. The conductive thin film has excellent conductivity, allows the easy adjustment of a work function, also allows easy film formation, and thus can be advantageously used in various electronic elements, such as organic light-emitting devices and organic solar cells. 1. A conductive thin film comprising a conductive layer and a surface energy-tuning layer ,wherein the conductive layer comprises a conductive polymer and a first fluorine-based material,the surface energy-tuning layer comprises a second fluorine-based material but does not comprise the conductive polymer, andthe first fluorine-based material and the second fluorine-based material are the same or different from each other.2. The conductive thin film of claim 1 , wherein the conductive polymer comprises polythiophene claim 1 , polyaniline claim 1 , polypyrrole claim 1 , polystyrene claim 1 , polyethylenedioxythiophene claim 1 , polyacetylene claim 1 , polyphenylene claim 1 , polyphenylvinylene claim 1 , polycarbazole claim 1 , a copolymer comprising two or more different repeating units thereof claim 1 , a derivative thereof claim 1 , or a blend of two or more types thereof.3. The conductive thin film of claim 1 , wherein the conductive polymer comprises a self-doped conductive polymer doped with one or more types of an ionic group and a polymeric acid claim 1 ,the ionic group comprises an anionic group, and a cationic group disposed to counter the anionic group,{'sub': 3', '3', '3', '2, 'sup': 2−', '−', '−', '−', '−', '2−, 'the anionic group is selected from the group consisting of PO, SO, COO, I, CHCOO, and BO,'}the cationic group comprises one or more types among a metal ion and an organic ion,{'sup': +', '+', '+', '+2', '+2', '+3, 'the metal ion is selected from the group consisting of Na, K, Li, Mg, Zn, and Al, and'}{'sup': +', '+', '+', '+', '+', '+', '+', '+', '+, 'sub': 3', '2', 'n', '3', '4 ...

Organic electronic devices with multiple solution-processed layers

A method for fabricating an organic light emitting device stack involves depositing a first conductive electrode layer over a substrate; depositing a first set of one or more organic layers, wherein at least one of the first set of organic layers is a first emissive layer and one of the first set of organic layers is deposited by a solution-based process that utilizes a first solvent; depositing a first conductive interlayer by a dry deposition process; and depositing a second set of one or more organic layers, wherein at least one of the second set of organic layers is a second emissive layer and one of the second set of organic layers is deposited by a solution-based process that utilizes a second solvent, wherein all layers that precede the layer deposited using the second solvent are insoluble in the second solvent.

PHYSICAL UNCLONABLE FUNCTION (PUF) INCLUDING A PLURALITY OF NANOTUBES, AND METHOD OF FORMING THE PUF

A physical unclonable function (PUF) includes a first plurality of carbon nanotubes (CNTs) formed in a first direction, a second plurality of CNTs formed on the first plurality of CNTs in a second direction which is substantially perpendicular to the first direction, and a plurality of contacts connected at an end portion of the first plurality of CNTs and the second plurality of CNTs. 1. A physical unclonable function (PUF) comprising:a first plurality of carbon nanotubes (CNTs) formed in a first direction;a second plurality of CNTs formed on the first plurality of CNTs in a second direction which is substantially perpendicular to the first direction; anda plurality of contacts connected at an end portion of the first plurality of CNTs and the second plurality of CNTs.2. The PUF of claim 1 , wherein the first plurality of CNTs and the second plurality of CNTs comprise single-walled nanotubes (SWNT) including a diameter in a range of 0.6 nm to 3 nm claim 1 , and a length in a range from 10 nm to 10 μm.3. The PUF of claim 1 , wherein a pitch between the first plurality of CNTs is in a range from 5 nm to 10 nm claim 1 , and a pitch between the second plurality of CNTs is in a range from 5 nm to 200 nm.4. The PUF of claim 1 , wherein the first plurality of CNTs are substantially aligned in the first direction claim 1 , and the second plurality of CNTs are substantially aligned in the second direction.5. The PUF of claim 1 , wherein the first plurality of CNTs are formed in a first horizontal plane and the second plurality of CNTs are formed in a second horizontal plane which is substantially parallel to the first plane.6. The PUF of claim 1 , wherein a distance between a CNT of the first plurality of CNTs is less than 4 nm.7. The PUF of claim 1 , further comprising:a first alignment layer formed on a substrate, the first plurality of CNTs being formed on the first alignment layer.9. The PUF of claim 8 , wherein the plurality of contacts comprises:a first plurality of ...

TRANSPARENT CONDUCTIVE STRUCTURE AND FORMATION THEREOF

Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals to form a transparent conductive structure. 122-. (canceled)23. A method of fabricating a transparent conductive structure comprising one or more zinc oxide crystals , the method comprising:forming a patterned layer on previously deposited zinc oxide, wherein the patterned layer comprises one of a patterned template layer or a patterned mask layer;selective etching of the previously deposited zinc oxide if the patterned layer comprises the patterned mask layer; andselective depositing of zinc oxide by an aqueous solution type deposition if the patterned layer comprises the patterned template layer;wherein the selective etching or selective depositing to at least partially form one or more three dimensional geometric features to provide additional electrical-type and/or optical-type properties for the transparent conductive structure.24. The method of claim 23 , wherein the selective etching is substantially in accordance with a pattern of openings in the patterned mask layer exposing surface locations of the previously deposited zinc oxide.25. The method of claim 23 , wherein the selective depositing is substantially in accordance with a pattern of openings in the patterned template layer exposing surface locations of the previously deposited zinc oxide.26. The method of claim 23 , wherein the previously deposited zinc oxide is deposited by an aqueous solution type deposition.27. The method of claim 26 , wherein the deposition by an aqueous solution type deposition comprises seeding zinc oxide by nucleation followed by bulk deposition.28. The method of claim 23 , and further comprising:depositing more zinc oxide;forming another patterned layer on the more zinc oxide, wherein the another patterned layer comprises one of a patterned template layer or a patterned mask layer;selective etching of the more zinc oxide if the patterned layer comprises the patterned mask layer; ...

ORGANIC ELECTROLUMINESCENT DISPLAY PANEL, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

The present disclosure relates to an organic electroluminescent display panel, a method of manufacturing the same, and a display device that can alleviate or avoid the occurrence of pixel crosstalk problems due to lateral conduction of the charge generation layer. An organic electroluminescent display panel is provided which comprises: a substrate; an anode layer and a pixel defining layer over the substrate, the pixel defining layer defining pixel units, wherein a recess is provided in the pixel defining layer between adjacent pixel units; a stack of organic electroluminescent units over the anode layer and the pixel defining layer, the stack comprising at least two organic electroluminescent units and a charge generation layer disposed between organic electroluminescent units which are adjacent to each other; a cathode layer over the stack, wherein the corresponding charge generation layers of the adjacent pixel units are disconnected at the recesses, and wherein the cathode layer is continuous at the recess. 1. An organic electroluminescent display panel comprising:a substrate;an anode layer and a pixel defining layer over the substrate, the pixel defining layer defining pixel units, wherein a recess is provided in the pixel defining layer between adjacent pixel units;a stack of organic electroluminescent units over the anode layer and the pixel defining layer, the stack comprising at least two organic electroluminescent units and a charge generation layer disposed between organic electroluminescent units which are adjacent to each other; anda cathode layer over the stack;wherein corresponding charge generation layers of the adjacent pixel units are disconnected at the recesses, andwherein the cathode layer is continuous at the recess.2. The organic electroluminescent display panel according to claim 1 , wherein the recess between adjacent pixel units are shared by the adjacent pixel units.3. The organic electroluminescent display panel according to claim 1 , ...

DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

A display device includes: a base substrate; tight-emitting elements on the base substrate with a TFT layers intervening between the tight-emitting elements and the base substrate, to form a display area; a sealing film including a sequentially formed stack of a first inorganic film and a second inorganic film and provided so as to cover the light-emitting elements; and an insular non-display area in the display area, wherein the non-display area includes a frame-shaped inner circular wall protruding in a thickness direction of the base substrate and extending along a boundary between the non-display area and the display area, and the inner circular wall includes on a surface thereof an organic buffer layer interposed between the first inorganic film and the second inorganic film. 1. A display device comprising:a base substrate;light-emitting elements on the base substrate with a TFT layer intervening between the light-emitting elements and the base substrate, to form a display area;a sealing film including a sequentially formed stack of a first inorganic film and a second inorganic film and provided so as to cover the light-emitting elements; andan insular non-display area in the display area, whereinthe non-display area includes a frame-shaped inner circular wall protruding in a thickness direction of the base substrate and extending along a boundary between the non-display area and the display area, andthe inner circular wall includes on a surface thereof an organic buffer layer interposed between the first inorganic film and the second inorganic film.2. The display device according to claim 1 , whereinthe surface of the inner circular wall includes a first side face facing the display area and a second side face opposite the display area, andthe organic buffer layer is provided on the first side face and the second side face.3. The display device according to claim 2 , wherein the inner circular wall has a bottom face forming an angle of 70° to 150° with each of ...

OLED DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Each of sub-pixels includes an upper electrode layer, a lower electrode layer between the upper electrode layer and the substrate, an organic light-emitting layer between the lower electrode layer and the upper electrode layer, and an interlayer between the organic light-emitting layer and the lower electrode layer. The pixel defining layer is provided between the lower electrode layer and the interlayer. The convex structural part is provided between the substrate and the interlayer. The convex structural part has a third side wall on the side of the first sub-pixel and a fourth side wall on the side of the second sub-pixel. The first side wall, the second side wall, the third side wall, and the fourth side wall have forward tapered surfaces. 1. An OLED display device comprising:a substrate;a plurality of sub-pixels arrayed on the substrate;a pixel defining layer provided to surround each of the plurality of sub-pixels, the pixel defining layer having a groove formed between a first sub-pixel and a second sub-pixel for different colors adjacent to each other; anda convex structural part formed in the groove, the convex structural part being distant from a first side wall of the pixel defining layer in the groove on the side of the first sub-pixel and a second side wall of the pixel defining layer in the groove on the side of the second sub-pixel,wherein each of the plurality of sub-pixels includes an upper electrode layer, a lower electrode layer between the upper electrode layer and the substrate, an organic light-emitting layer between the lower electrode layer and the upper electrode layer, and an interlayer between the organic light-emitting layer and the lower electrode layer,wherein the pixel defining layer is provided between the lower electrode layer and the interlayer,wherein the convex structural part is provided between the substrate and the interlayer,wherein the convex structural part has a third side wall on the side of the first sub-pixel and a ...

METHOD FOR MANUFACTURING ORGANIC DEVICE, AND ROLL

In a method of manufacturing an organic device, a lead portions (A and B) having a gas barrier property are provided at one end and the other end in a longitudinal direction of a substrate (). The method includes a formation step (S, S, or S) of forming at least one of electrode layers ( and ) and an organic functional layer () on the substrate (), a winding step (S) of winding the substrate () in a roll shape after the formation step (S, S, or S), and a storage step (S) of storing the roll-shaped substrate () after the winding step (S). 1. A method of manufacturing an organic device using a belt-shaped flexible substrate in a continuous conveyance manner , in which a lead portion having a gas barrier property is provided at one end and the other end in a longitudinal direction of the substrate , the method comprising:a formation step of forming at least one of an electrode layer and an organic functional layer on the substrate;a winding step of winding the substrate in a roll shape after the formation step; anda storage step of storing the roll-shaped substrate after the winding step.2. The method of manufacturing an organic device according to claim 1 , wherein the electrode layer includes a first electrode layer and a second electrode layer claim 1 , andwherein the formation step includes forming the first electrode layer, the organic functional layer, and the second electrode layer on the substrate in this order.3. The method of manufacturing an organic device according to claim 1 , wherein a gas barrier layer is formed on at least one of a front surface and a rear surface of the substrate.4. The method of manufacturing an organic device according to claim 1 , wherein a gas barrier film or a metal foil is provided in the lead portion.5. The method of manufacturing an organic device according to claim 1 , wherein a length of the lead portion is greater than a length of an outer circumference of a roll which is formed by winding the substrate.6. The method of ...

ORGANIC RARE EARTH SOLID MICELLE, PREPARATION METHOD THEREFOR, AND METHOD FOR INCREASING PHOTOELECTRIC CONVERSION EFFICIENCY OF SOLAR BATTERY

Provided are an organic rare-earth solid micelle, a preparation method therefor, and a method for increasing the photoelectric conversion efficiency of a solar battery. A small organic conjugated ligand is taken as a first ligand, an amphiphilic diblock polymer is taken as a second ligand, and the first ligand and the second ligand are mixed and doped with a rare-earth chloride solution, and self-assembled to form an organic rare-earth solid micelle, whereby the fluorescence emission intensity and the fluorescence efficiency of the rare-earth element are improved. Next, the prepared organic rare-earth solid micelle is spin coated on an ITO layer of a solar battery, to prepare a solar battery with the organic rare-earth solid micelle. Therefore the sunlight absorption of a cell is increased, and the photoelectric conversion efficiency is improved. The preparation process is simple, low in cost, high in photoelectric conversion efficiency, and environmentally friendly. 1. A method for preparing an organic rare-earth solid micelle , comprising: taking a small organic conjugated ligand as a first ligand and an amphiphilic diblock polymer as a second ligand , mixing and doping the first ligand and the second ligand with a rare-earth chloride solution , and self-assembling to form an organic rare-earth solid micelle;wherein the amphiphilic diblock polymer is polymethyl methacrylate-b-polyacrylic acid (PMMA-b-PAA),the molar ratio of the small organic conjugated ligand:rare-earth chloride:amphiphilic diblock polymer is 3:1:1,wherein the small organic conjugated ligand:rare-earth chloride:amphiphilic diblock polymer are subjected to complexation reaction for 5-10 hrs in an oil bath at 50-70° C., to obtain a solution of an organic rare-earth solid micelle that is a complex having a size of 10-20 nm.2. (canceled)3. The preparation method according to claim 1 , wherein the polymethyl methacrylate-b-polyacrylic acid (PMMA-b-PAA) useful as the amphiphilic diblock polymer is ...

ELECTRODE, METHOD FOR MANUFACTURING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME

An electrode includes: a polymer layer including a non-conductive material; a conductive nanomaterial embedded in a top surface of the polymer layer; and a planarization layer on the polymer layer and on the conductive nanomaterial. The planarization layer includes a conductive material and a surfactant. 1. An electrode comprising:a polymer layer comprising a non-conductive material;a conductive nanomaterial embedded in the polymer layer; anda planarization layer comprising a conductive material and a surfactant on the polymer layer and on the conductive nanomaterial.2. The electrode of claim 1 , wherein the planarization layer comprises:polyethylenedioxythiophene:polystyrenesulfonate (PEDOT:PSS); anda fluorine-based surfactant.3. The electrode of claim 2 , wherein the conductive nanomaterial comprises a metal nanowire.4. The electrode of claim 3 , wherein the metal nanowire comprises at least one of silver (Ag) claim 3 , copper (Cu) claim 3 , gold (Au) claim 3 , platinum (Pt) claim 3 , palladium (Pd) claim 3 , chromium (Cr) claim 3 , nickel (Ni) claim 3 , and aluminum (Al).5. The electrode of claim 4 , wherein a volume of the conductive nanomaterial embedded in the polymer layer comprises about 0.05% to 20% of a total volume of the polymer layer.6. The electrode of claim 4 , wherein the polymer layer comprises at least one of polyimide (PI) claim 4 , polyethylene terephthalate (PET) claim 4 , polyethersulfone (PES) claim 4 , polyethylene naphthalate (PEN) claim 4 , polycarbonate (PC) claim 4 , polymethyl methacrylate (PMMA) claim 4 , polyvinyl alcohol (PVA) claim 4 , triacetyl cellulose (TAC) claim 4 , polystyrene (PS) claim 4 , polyether imide (PEI) claim 4 , polydimethylsiloxane (PDMS) claim 4 , a silicone resin claim 4 , a fluorine resin claim 4 , or an epoxy resin.7. A method of manufacturing an electrode comprising:forming a planarization layer comprising a conductive material and a surfactant on a substrate;coating a conductive nanomaterial on the ...

PHOTOELECTRODE AND METHOD FOR PREPARING THE SAME

The present invention relates to an photoelectrode and the preparation method thereof, wherein said photoelectrode comprises a substrate and a titania layer composed of a mesoporous titania bead having a diameter of 200-1000 nm, specific surface area of 50-100 m/g, porosity of 40-60%, pore radius of 5-20 nm, pore volume of 0.20-0.30 cm/g, and the titania comprised in the bead is anatase titania. 1. A method for preparing a photoelectrode , consisting of:(1) providing a transparent non-conductive plastic substrate covered by a transparent conductive film;{'sup': 2', '3, '(2) coating a mesoporous titania bead on said substrate to obtain a coated layer, in which said bead has a diameter of 200-1000 nm, specific surface area of 50-100 m/g, porosity of 40-60%, pore radius of 5-20 nm, pore volume of 0.20-0.30 cm/g, and the titania comprised in the bead is anatase titania; and'}(3) pressing the coated layer from step (2) under room temperature to obtain said photoelectrode; andoptionally, between step (1) and step (2), coating a titania nanoparticle on said substrate to obtain a titania nanoparticle layer, and said titania nanoparticle is not said mesoporous titania bead.2. The method according to claim 1 , wherein said transparent non-conductive substrate is a ITO claim 1 , FTO or TCO film.3. The method according to claim 1 , wherein said substrate is PEN or PET substrate.4. The method according to claim 1 , wherein said titania layer has a thickness of 5-10 μm.5. The method according to claim 1 , wherein said titania nanoparticle of the titania nanoparticle layer is P25 claim 1 , ST-01 claim 1 , ST-21 claim 1 , ST-31 claim 1 , TTO-55S or ST-30L.6. The method according to claim 1 , wherein said titania nanoparticle layer has a thickness of 3-5 μm.7. The method according to claim 1 , which is applied to manufacture a photoelectrode of a dye-sensitized solar cell. 1. Field of the InventionThe present invention relates to a photoelectrode and method for preparing the same.2. ...

Light-Emitting Panel, Light-Emitting Device Using the Light-Emitting Panel, and Method for Manufacturing the Light-Emitting Panel

To provide a light-emitting panel in which the occurrence of crosstalk is suppressed. To provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. The light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and an insulating partition which separates the two first electrodes. A portion with a thickness Asmaller than a thickness Aof a portion of the layer containing a light-emitting organic compound, which overlaps with a side surface of the partition, is included. The ratio (B/B) of a thickness Bof a portion of the second electrode, which overlaps with a side surface of the partition, to a thickness Bof a portion of the second electrode, which overlaps with the first electrode, is higher than the ratio (A/A). 1. (canceled)2. A light-emitting panel comprising:a first electrode over a substrate;an insulating layer covering partially a top surface of the first electrode;a layer containing a light-emitting compound covering the first electrode and the insulating layer; anda second electrode covering the layer containing the light-emitting compound,{'sub': 0', '1', '1', '0, 'wherein the layer containing the light-emitting compound includes a portion of a thickness Acovering the first electrode and a portion of a thickness Acovering a side surface of the insulating layer, the thickness Abeing smaller than the thickness A,'}{'sub': 0', '1', '1', '0', '1', '0, 'wherein the second electrode includes a portion of a thickness Bcovering the first electrode with the layer containing the light-emitting compound interposed therebetween, and a portion of a thickness Bcovering the side surface of the insulating layer with the layer containing the light-emitting compound interposed therebetween, a ratio B/Bbeing higher than a ratio A/A, and'}{'sub': '1', 'wherein a portion of the layer containing the light-emitting compound covering a top surface of the ...

SOLID JUNCTION-TYPE PHOTOVOLTAIC DEVICE AND METHOD FOR PRODUCING SAME

A solid junction-type photovoltaic device including: a substrate; a first conductive layer; a power generation layer including a perovskite layer; and a conductive material including a second conductive layer, which are laminated in this order, wherein the conductive material has a self-supporting property. 1. A solid junction-type photovoltaic device comprising: a substrate; a first conductive layer; a power generation layer comprising a perovskite layer; and a conductive material comprising a second conductive layer , which are laminated in this order ,wherein the conductive material has a self-supporting property.2. The solid junction-type photovoltaic device according to claim 1 , wherein the conductive material has a thickness of 1 μm or more.3. The solid junction-type photovoltaic device according to claim 1 , wherein the second conductive layer is a metal foil.4. The solid junction-type photovoltaic device according to claim 1 , wherein the conductive material is a laminate comprising the second conductive layer and a support.5. The solid junction type photovoltaic device according to claim 4 , wherein the second conductive layer comprises at least one member selected from the group consisting of a metal claim 4 , a metal oxide claim 4 , a carbon material claim 4 , and an organic polymer material.6. The solid junction-type photovoltaic device according claim 1 , wherein the power generation layer has at least one crack extending from its surface on a side of the conductive material toward the first conductive layer claim 1 , andthe conductive material adheres to the power generation layer and extends over the crack.7. A method for producing a solid junction-type photovoltaic device comprising: a first conductive layer; a power generation layer comprising a perovskite layer; and a conductive material comprising a second conductive layer claim 1 , which are laminated in this order claim 1 , the method comprising:a step of forming, on a substrate, the first ...

NANOPATCH GRAPHENE COMPOSITE AND METHOD OF MANUFACTURING THE SAME

Disclosed is a nanopatch graphene composite, which includes graphene including a defect and a nanopatch positioned on the defect, and is configured such that a nanopatch is formed through a self-assembling process on the surface of graphene, thus improving the mechanical properties and durability of the graphene composite. Also, a flexible organic transistor, including the nanopatch graphene composite of the invention, is transparent and has high mechanical durability, thus exhibiting device stability, and the molecular alignment of the organic semiconductor layer growing on the nanopatch graphene composite is induced so as to become favorable for charge injection, thereby increasing the performance of the device. 1. A nanopatch graphene composite , comprising:a graphene including a defect; anda nanopatch disposed on the defect.2. The nanopatch graphene composite of claim 1 , wherein the defect is at least one selected from the group consisting of a grain boundary claim 1 , a dot defect claim 1 , a line defect claim 1 , cracking claim 1 , folding claim 1 , and wrinkling.3. The nanopatch graphene composite of claim 2 , wherein the nanopatch includes a self-assembled monolayer (SAM).5. The nanopatch graphene composite of claim 4 , wherein the compound represented by Chemical Formula 1 is octadecyltrimethoxysilane (OTS).6. The nanopatch graphene composite of claim 1 , wherein the nanopatch suppresses or delays fracture of the graphene growing on the defect upon transforming the graphene.7. The nanopatch graphene composite of claim 1 , wherein the graphene is at least one selected from the group consisting of single-layer graphene claim 1 , double-layer graphene and multilayer graphene.8. An organic transistor claim 1 , comprising:a flexible substrate;a semiconductor layer on the flexible substrate; anda gate electrode, a source electrode and a drain electrode,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein at least one selected from the group consisting of ...

EFFICIENT INTERCONNECTING LAYER FOR TANDEM SOLAR CELLS

A tandem solar cell comprises a front subcell; a back subcell; and an interconnecting layer of Cr/MoObetween the front subcell and the back subcell and connecting the two subcells in series. The back subcell may be an isoindigo-based polymer. The front subcell may comprise a carbazole-thienyl-benzothiadiazole based polymer. The front subcell may comprise an isoindigo-based polymer. The isoindigo-based polymer is a repeating 2-thiophene-terminated polymer. A tandem solar cell comprises a substrate layer; a layer of PCDTBT:PCBM applied on the substrate layer; a bilayer of chromium and MoOapplied to the PCDTBT:PCBM layer; a layer of P(T3-il)-2:PCBM applied on the bilayer of chromium and MoO; and Ca and Al electrode layer on the top. 1. A tandem solar cell comprisinga front subcell;a back subcell; and{'sub': '3', 'an interconnecting layer of Cr/MoObetween the front subcell and the back subcell and connecting the two subcells in series.'}2. The tandem solar cell of claim 1 , wherein the back subcell comprises an isoindigo-based polymer.3. The tandem solar cell of claim 1 , wherein the front subcell comprises a carbazole-thienyl-benzothiadiazole based polymer.4. The tandem solar cell of claim 1 , wherein the front subcell comprises an isoindigo-based polymer.7. The tandem solar cell of claim 6 , wherein the substrate is a PEDOT:PSS coated ITO glass substrate.8. The tandem solar cell of claim 6 , wherein the layer of PCDTBT:PCBM is about 80-130 nm thick.9. The tandem solar cell of claim 6 , wherein the layer of PCDTBT:PCBM is about 80 nm thick.10. The tandem solar cell of claim 6 , wherein the bilayer of chromium and MoOcomprises thermally evaporated chromium and MoO.11. The tandem solar cell of claim 6 , wherein the bilayer of chromium and MoOcomprises a layer of chromium about 1-3 nm thick.12. The tandem solar cell of claim 6 , wherein the bilayer of chromium and MoOcomprises a layer of chromium about 2 nm thick.13. The tandem solar cell of claim 6 , wherein the bilayer ...

ELECTROLUMINESCENT DEVICE AND A LIGHT EMITTING SYSTEM

An electroluminescent device including an electrode, the electrode being ionically conductive; an electroluminescence layer positioned adjacent or in contact with the electrode, the electroluminescence layer being electrically coupled to the electrode; the electroluminescence layer receiving electrical energy from the electrode and illuminating in response to received electrical energy, and wherein the electrode and the electroluminescence layer are repairable such that the function of the electrode and the electroluminescence layer is restored after a deformation. 1. An electroluminescent device comprising:an electrode, the electrode being ionically conductivean electroluminescence layer positioned adjacent or in contact with the electrode, the electroluminescence layer being electrically coupled to the electrode,the electroluminescence layer receiving electrical energy from the electrode and illuminating in response to received electrical energy, and;wherein the electrode and the electroluminescence layer are repairable such that the function of the electrode and the electroluminescence layer is restored after a deformation.2. The electroluminescent device in accordance with claim 1 , wherein the electrode and the electroluminescence layer each are repairable such that the function of the electrode and the electroluminescence layer is restored even after being cut.3. The electroluminescent device in accordance with claim 1 , wherein the electroluminescence device comprises a first electrode claim 1 , a second electrode claim 1 , the electroluminescence layer being sandwiched between the first electrode and the second electrode and the electroluminescence layer arranged in electrical communication with the first electrode and the second electrode.4. The electroluminescent device in accordance with claim 1 , wherein the electroluminescence layer comprises a polymer and an electroluminescent material.5. The electroluminescent device in accordance with claim 4 , ...

METHOD FOR MANUFACTURING MOLECULAR MEMORY DEVICE

According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members. 115.-. (canceled)16. A method for manufacturing a molecular memory device , comprising:forming a first wiring layer including a plurality of first wirings extending in a first direction;forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction;forming a sacrificial film to cover the core member, the sacrificial film being formed from an insulating material different from the core member;forming a second wiring on a side surface of the core member;removing a portion of the sacrificial film located immediately below the second wiring;embedding a molecule serving as a memory material into a space between the first wiring and the second wiring after forming the second wiring and removing the portion of the sacrificial film, the portion of the sacrificial film being removed from the space; andembedding an insulating member in a space between the second wirings between the core members.17. The method according to claim 16 , further comprising:forming a spacer insulating ...

A METHOD OF PRODUCING A GRAPHENE LAYER

The present invention relates to a method of preparing an at least partially transparent and conductive layer () comprising graphene, the method comprising the steps of: (a) applying a dispersion comprising graphene oxide onto a substrate to form a layer comprising graphene oxide on the substrate, and (b) heating at least part of the layer obtained in step (a) by laser irradiation () at a laser output power of at least 0.036 W, thereby chemically reducing at least a part of the graphene oxide to graphene () and physically reducing the thickness of the layer by ablation. An advantage of the present invention is that it provides a simplified method of preparing a layer comprising graphene. The layer thus prepared has desirable transparency and conductivity. 1. A method of preparing an at least partially transparent and conductive layer comprising graphene , the method comprising the steps of:(a) applying a dispersion comprising graphene oxide onto a substrate to form a layer comprising graphene oxide on the substrate, wherein the thickness of the layer obtained in step (a) is at least 10 μm and{'sup': '2', '(b) heating at least part of the layer obtained in step (a) by laser irradiation at a laser output power of at least 0.036 W, thereby chemically reducing at least a part of the graphene oxide to graphene and physically reducing the thickness of the layer by ablation, wherein the heating in step (b) is adapted to provide an energy density of less than 6.4 J/mm.'}2. The method according to claim 1 , wherein the layer comprising graphene oxide is heated by laser irradiation at a laser output power of at least 0.04 W.3. The method according to claim 1 , wherein the layer comprising graphene oxide is heated by laser irradiation at a laser output power of at least 0.058 W.4. The method according to claim 1 , wherein the heating in step (b) is carried out at a beam speed 0.1 m/s or less.5. The method according to claim 1 , wherein the heating in step (b) is carried out at ...

Method of manufacturing a stacked organic light emitting diode, stacked oled device, and apparatus for manufacturing thereof

The invention is directed at a method of manufacturing a stacked organic light emitting diode—OLED—device. The method comprises the steps of providing a carrier and thrilling a first organic light emitting diode on the carrier by means of solution based depositing of consecutive diode layers of said first organic light emitting diode. The method further comprises forming one or more charge injection layers on the first organic light emitting diode and forming a second organic light emitting diode on the carrier by means of solution based depositing of consecutive diode layers of said second organic light emitting diode. The step of forming of the one or more charge injection layers comprises a step of performing atomic layer deposition for depositing at least one of the one or more charge injection layers. The invention further relates to an apparatus for manufacturing a stacked OLED and to a stacked OLED device.

SUBSTRATE IMPRINTED WITH A PATTERN FOR FORMING ISOLATED DEVICE REGIONS

An example provides a method for forming an apparatus including a substrate imprinted with a pattern for forming isolated device regions. A method may include imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions at a first level and a plurality of elevated regions at a second level, and depositing a first layer of conductive material over the patterned substrate with a plurality of breaks to form a plurality of bottom electrodes. The method may include depositing a layer of an active stack, with a second layer of conductive material, over the plurality of bottom electrodes to form a plurality of devices on the plurality of recessed regions isolated from each other by the plurality of elevated regions. 1. A method for making an electronic device , comprising:imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions and a plurality of elevated regions extending from the plurality of recessed regions;depositing a first layer of conductive material over the patterned substrate with a plurality of breaks to form a plurality of bottom electrodes; anddepositing a layer of an active stack, with a second layer of conductive material, over the plurality of bottom electrodes to form a plurality of devices on the plurality of recessed regions isolated from each other by the plurality of elevated regions.2. The method of claim 1 , further comprising bonding the plurality of devices onto another substrate.3. The method of claim 2 , wherein said bonding the plurality of devices comprises laminating the plurality of devices onto the other substrate using a conductive adhesive.4. The method of claim 1 , wherein said depositing the first layer of conductive material comprises depositing the first layer of conductive material at an angle with respect to a major surface of the patterned substrate.5. The method of claim 1 , wherein said ...

LIGHTING APPARATUS USING ORGANIC LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF

According to a lighting apparatus using an organic light-emitting diode and a manufacturing method thereof of the present disclosure, a current imbalance due to a short circuit is controlled using a transparent high-resistance conductive film as a positive electrode instead of indium tin oxide (ITO), and a decrease in luminance is prevented by decreasing resistance of a positive electrode of an emission region through a post treatment. According to the present disclosure, it is possible to solve the problem of lighting malfunction of an entire panel, caused by a short circuit due to a foreign substance, even without reducing an aperture ratio, and concurrently, it is possible to secure normal luminance as resistance of an emission region is decreased. 1. A lighting apparatus using an organic light-emitting diode , the lighting apparatus comprising:an auxiliary electrode disposed on a substrate;a first electrode of a non-emission region formed of a transparent conductive film and covering the auxiliary electrode, and a first electrode of an emission region disposed on each of side surfaces of the first electrode of the non-emission region;a first passivation layer disposed on an upper portion of the first electrode of the non-emission region;an organic light-emitting layer and a second electrode, disposed in a lighting part of the substrate on which the first passivation layer is disposed; anda metal film disposed in the lighting part of the substrate,wherein the first electrode of the non-emission region has a resistance value higher than that of indium tin oxide (ITO), and the first electrode of the emission region has a resistance value lower than that of the first electrode of the non-emission region.2. The lighting apparatus of claim 1 , wherein the first electrode of the non-emission region has a sheet resistance in a range of 10Ω/square to 10Ω/square.3. The lighting apparatus of claim 1 , wherein the first electrode of the emission region has a sheet ...

LIGHTING APPARATUS USING ORGANIC LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

According to a lighting apparatus using an organic light emitting diode of the present disclosure and a manufacturing method thereof, a transparent high resistance conductive layer is used for an anode instead of ITO to control the concentrated current due to the short and the anode of the emission area lowers the resistance through the post-treatment to suppress the lowering of luminance. Further, the auxiliary electrode is formed of a transparent nanowire and the first protective layer above the auxiliary electrode is removed to be utilized as an emission area, so that the aperture ratio is drastically improved. 1. A lighting apparatus using an organic light emitting diode , the lighting apparatus comprising:an auxiliary electrode formed of a transparent nanowire on a substrate;a first-first electrode formed of a transparent conductive layer and covering the auxiliary electrode;a second-first electrode disposed in an emission area divided by the auxiliary electrode;an organic light emitting layer and a second electrode disposed in an illuminating unit of the substrate including the first and second first electrodes; andan encapsulating unit disposed in the illuminating unit of the substrate,wherein the first-first electrode has a higher resistance than indium tin oxide (ITO) and the second-first electrode has a lower resistance than the first-first electrode.2. The lighting apparatus according to claim 1 , wherein the first-first electrode has a sheet resistance in a range of 108Ω/□ to 109 Ω/□.3. The lighting apparatus according to claim 1 , wherein the second-first electrode has a sheet resistance in a range of 103Ω/□ to 104 Ω/□.4. The lighting apparatus according to claim 1 , wherein the transparent conductive layer includes 1% to 10% of a conductive material claim 1 , 80% to 90% of a solvent claim 1 , 10% to 20% of a binder claim 1 , and approximately 1% of additives.5. The lighting apparatus according to claim 4 , wherein the conductive material includes a ...

SPECTRAL EMISSION MODIFICATION USING LOCALIZED SURFACE PLASMON OF METALLIC NANOPARTICLES

A method for engineering a line shape of emission spectrum of an organic emissive material in an electroluminescent device is disclosed in which a layer of plasmonic metallic nanostructures having a localized surface plasmonic resonance (LSPR) is provided in proximity to the emissive layer and the layer of plasmonic metallic nanostructures is greater than 2 nm but less than 100 nm from the emissive layer and the LSPR of the plasmonic metallic nanostructures matches the emission wavelength of the organic emissive material. An electroluminescent device incorporating the plasmonic metallic nanostructures is also disclosed.

ELECTRICALLY CONDUCTIVE POLYMERS

An electrically conductive film suited to use as a transparent anode, a method of forming the film, and an electronic device comprising the film are disclosed. The device includes a conductive polymer electrode defining first and second surfaces and having an electrical conductivity gradient between the first and second surfaces. A second electrode is spaced from the second surface by at least one organic material layer, such as a light emitting layer. 127-. (canceled)28. A method of forming an electronic device , comprising: a) depositing a second solution comprising a conductive polymer and a dopant on the first layer to form a second layer with a different conductivity than the first layer, and', 'b) irradiating the first layer to produce a conductivity gradient in the first layer; and, 'forming a first electrode, wherein the first electrode comprises a conductive polymer electrode defining first and second surfaces and having an electrical conductivity gradient between the first and second surfaces, wherein forming the first electrode comprises depositing a solution comprising a conductive polymer and a dopant to form a first layer, and thereafter performing at least one offorming at least one organic material layer intermediate the first electrode and a second electrode.29. The method of claim 28 , further comprising: prior to depositing the second solution claim 28 , heating the first layer to render the conductive polymer insoluble in the second solution. This is a continuation application of copending application Ser. No. 12/481,119 filed on Jun. 9, 2009, by Woohong Kim et al., titled “ELECTRICALLY CONDUCTIVE POLYMERS,” the entire contents of which is incorporated herein by reference.This disclosure relates to organic conducting films. It finds particular application in connection with an electrode formed from one or more electrically-conducting polymers and having two or more regions of different electrical conductivity. It is to be appreciated that the ...

ELECTRODES FORMED BY OXIDATIVE CHEMICAL VAPOR DEPOSITION AND RELATED METHODS AND DEVICES

The present invention generally relates to electrodes formed by oxidative chemical vapor deposition and related methods and devices. 1. A photovoltaic cell , comprising:a first electrode;a second electrode;a photoactive material positioned between the first electrode and the second electrode; anda substrate, wherein the second electrode is positioned between the photoactive material and the substrate,wherein the first electrode is formed by or formable by oxidative chemical vapor deposition.2. A photovoltaic cell , comprising:a first electrode;a second electrode;a photoactive material positioned between the first electrode and the second electrode; anda substrate, wherein the second electrode is positioned between the photoactive material and the substrate,wherein the first electrode is formed by or formable by polymerization of vapor phase precursors.3. A method of forming a photovoltaic cell , comprising:providing a substrate;depositing a second electrode on the substrate;optionally depositing a second electrode buffer material on the second electrode;depositing a photoactive material on the second electrode or the optionally deposited second electrode buffer material;optionally depositing a first electrode buffer material on the photoactive material; anddepositing, via oxidative chemical vapor deposition, a first electrode on the photoactive material or the optionally deposited first electrode buffer material.4. The photovoltaic cell as in claim 1 , wherein the first electrode comprises a conductive polymer.5. The photovoltaic cell as in claim 5 , wherein the conductive polymer comprises poly(3 claim 5 ,4-ethylenedioxythiophene).6. The method as in claim 3 , wherein the oxidative chemical vapor deposition comprises:providing a vapor-phase monomer species and a vapor-phase oxidizing agent to produce a vapor comprising a conductive polymer precursor; andcontacting the vapor with the surface of the photoactive material or optional first electrode buffer material to ...

X-RAY DETECTORS SUPPORTED ON A SUBSTRATE HAVING A SURROUNDING METAL BARRIER

An X-ray detector assembly includes a polymeric substrate having a lower surface and an upper surface, and an X-ray detector disposed on the upper surface of the substrate. The X-ray detector includes a thin-film-transistor array disposed on the substrate, an organic photodiode disposed on the thin-film-transistor array, and a scintillator disposed on the organic photodiode. A metal barrier extends substantially over an upper surface of the scintillator, substantially over peripherally-extending edges of the scintillator, the organic photodiode, and the thin-film-transistor array, and substantially over the lower surface of the substrate. 1. An X-ray detector assembly comprising:a polymeric substrate having a lower surface and an upper surface; a thin-film-transistor array disposed on said substrate;', 'an organic photodiode disposed on said thin-film-transistor array; and', 'a scintillator disposed on said organic photodiode; and, 'an X-ray detector disposed on said upper surface of said substrate, said X-ray detector comprisinga metal barrier extending substantially over an upper surface of said scintillator, substantially over peripherally-extending edges of said scintillator, said organic photodiode, and said thin-film-transistor array, and substantially over said lower surface of said substrate.2. The X-ray detector assembly of wherein said metal barrier extends continuously over the entire upper surface of said scintillator claim 1 , and the entire peripherally-extending edges of said scintillator claim 1 , said organic photodiode claim 1 , and said thin-film-transistor array.3. The X-ray detector assembly of wherein said metal barrier comprises a continuous monolithic metal barrier extending around the entire X-ray detector supported on said substrate.4. The X-ray detector assembly of wherein said metal barrier comprises metal coating.5. The X-ray detector assembly of wherein said metal barrier comprises a thickness of at least about 1 micrometer to about 1 ...

TRANSPARENT ELECTRODE, ELECTRONIC DEVICE, AND TRANSPARENT ELECTRODE MANUFACTURING METHOD

Provided is a transparent electrode having both sufficient conductivity and light transmittance, and also provided is an electronic device which improves performance by using said transparent electrode. Further provided is method of manufacturing said transparent electrode. This transparent electrode is provided with a nitrogen-containing layer and an electrode layer. The nitrogen-containing layer is formed at a deposition speed of 0.3 nm/s or greater, and is configured using a compound containing nitrogen atoms. Further, the electrode layer is provided adjacent to the nitrogen-containing layer, has a 12 nm or lower film thickness and a measurable sheet resistance, and is configured using silver or an alloy having silver as the main component. 1. A transparent electrode , comprising:a nitrogen-containing layer formed at a deposition speed of 0.3 nm/s or greater and constituted using a compound containing a nitrogen atom; andan electrode layer that is provided adjacent to the nitrogen-containing layer, that has a 12 nm or lower film thickness and has a measurable sheet resistance, and that is constituted using silver or an alloy having silver as the main component.2. The transparent electrode according to claim 1 , wherein the nitrogen-containing layer is formed at a deposition speed of 0.5 nm/s or greater.3. The transparent electrode claim 1 , comprising:a nitrogen-containing layer constituted using a compound containing nitrogen atoms; andan electrode layer that is provided adjacent to the nitrogen-containing layer within two minutes after the formation of the nitrogen-containing layer, that has a 12 nm or lower film thickness and has a measurable sheet resistance, and that is constituted using silver or an alloy having silver as the main component.4. The transparent electrode according to claim 3 , wherein the electrode layer is formed adjacent to the nitrogen-containing layer within one minute after the formation of the nitrogen-containing layer.5. An electronic ...

Field Effect Transistor and Method for Production Thereof

A vertical channel field-effect transistor is taught. The vertical channel field-effect transistor comprises a primary substrate and a secondary substrate. A bottom conducting layer is provided on the primary substrate. A top conducting layer is transferred from a secondary substrate to the primary substrate by using an insulating adhesive layer. The thickness of the insulating adhesive layer defines the channel length. The portion of the top conducting layer which is over the bottom conducting layer defines the maximum possible channel. At least one semiconducting layer is provided on and around a perimeter of at least a portion of the channel width. At least one insulating layer is provided on at least a portion of the at least one semiconducting layer. At least one gate conducting layer provided on at least a portion of the at least one insulating layer. 1. A vertical channel field-effect transistor , comprising:a bottom conducting layer provided on a primary substrate and comprising at least one first functional group;an adhesive layer provided on a top surface of the bottom conducting layer and comprising at least one third functional group;a top conducting layer provided on a top surface of the adhesive layer and comprising at least one second functional group, wherein a portion of the perimeter of the top conducting layer overlapping the bottom conducting layer defines a channel width of the vertical channel field-effect transistor;at least one semiconducting layer provided on at least a portion of the channel width such that the at least one semiconducting layer connects the bottom conducting layer and the top conducting layer;at least one insulating layer provided on at least a portion of the at least one semiconducting layer; andat least one gate conducting layer provided on at least a portion of the at least one insulating layer andbonds of some of the at least one third functional group with some of the at least one first functional group and with some ...

PHOTOVOLTAIC YARN AND A PRODUCTION METHOD

The present invention relates to a photovoltaic yarn and production method wherein electrical conduction is enabled by the photovoltaic yarn comprising a texturized yarn () with a cathode layer (), an active layer () and an anode layer () coating thereon, the photovoltaic yarn can generate electricity utilizing the solar light, and which is developed especially to be used in textile industry. 1. A photovoltaic yarn , comprising:at least one texturized yarn,at least one intermediate layer covering the texturized yarn to increase the adhesion strength of the yarn,at least one cathode layer comprising a gallium-indium alloy coats on the yarn by means of the intermediate layer,{'sub': 61', '71', '71, 'at least one active layer comprising an electron donor material selected from a group consisting of p-type poly (3-hexylthiophene) (P3HT), poly [N-9′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7″-di-2-thienyl-2′,1′,3′-benzothiadiazole)](PCDTBT), poly Poly [2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-enzothiadiazole)] (PCPDTBT), poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl}{3 -fluoro-2-[2-ethylhexyl) carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7) and semi conductive polymers and an electron acceptor material selected from a group consisting of n-type carbon-60 derived [6,6]-phenyl-C-butyric acid methyl ester (PCBM); (6,6)-phenyl C-butyric acid methyl ester (PCBM), 1′,1″,4′,4″-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2″,3″][5,6]fullerene-C60, C60 derivative, indene-C60 bisadduct (ICBA) and semi conductive polymers,'}at least one anode layer, wherein the anode layer is a mixture of polymers comprising poly (3,4-ethylenedioxythyophene) (PEDOT), polystyrenesulphonate (PSS), dimethyl sulfoxide (DMSO) and triton X-100.2. The photovoltaic yarn according to claim 1 , wherein the anode layer comprises poly(3 claim 1 ,4-ethylenedioxythyophene)(PEDOT) and polysturenesulphonate (PSS) claim 1 , wherein the anode ...

MANUFACTURING METHOD OF OLED DISPLAY PANEL AND OLED DISPLAY PANEL

The manufacturing method provided by this application comprises: providing a substrate on which a plurality of pixel defining layers are arranged at intervals; disposing a hole injection layer on the substrate; disposing a hole transport layer on the hole injection layer; disposing an organic light emitting layer on the hole transport layer; disposing an electron transport layer on the organic light emitting layer and the pixel defining layers; and disposing a cathode metal layer on the electron transport layer, wherein the cathode metal layer comprises a first area located above the pixel defining layers; and processing the cathode metal layer in the first area. 1. A manufacturing method of an organic light emitting diode (OLED) display panel , comprising following steps:providing a substrate on which a plurality of pixel defining layers are arranged at intervals;disposing a hole injection layer on the substrate, wherein the hole injection layer is arranged in gaps between the plurality of pixel defining layers;disposing a hole transport layer on the hole injection layer;disposing an organic light emitting layer on the hole transport layer;disposing an electron transport layer on the organic light emitting layer and the pixel defining layers;disposing a cathode metal layer on the electron transport layer, wherein the cathode metal layer comprises a first area located above the pixel defining layers and a second area located above the organic light emitting layer; andprocessing the cathode metal layer in the first area to reduce a conductivity of a cathode transport layer in the first area;wherein the step of disposing the electron transport layer on the organic light emitting layer and the pixel defining layers comprises:disposing the electron transport layer on the organic light emitting layer and the pixel defining layers by performing a vacuum evaporation process; andwherein the step of disposing the cathode metal layer on the electron transport layer comprises: ...

COMPOSITE TRANSPARENT ELECTRODE, OLED AND METHOD FOR MANUFACTURING THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE

A composite transparent electrode, an organic light-emitting diode and a method for manufacturing thereof, an array substrate and a display device. In the composite transparent electrode, a cover layer () is provided between a metal layer () and a transparent conducting oxide layer (), the transparent conducting oxide layer () is electrically connected to the metal layer (). The composite transparent electrode can reduce damages to the metal layer () or decrease pressure fall during a sputtering process. 1. An organic light-emitting diode , comprising a first electrode , a second electrode , and an organic light-emitting functional layer located between the first electrode and the second electrode , wherein the second electrode is a composite transparent electrode , the composite transparent electrode comprising:a metal layer;a transparent conducting oxide layer, wherein the transparent conducting oxide layer is located on a side of the metal layer away from the organic light-emitting functional layer; anda transparent cover layer located between the metal layer and the transparent conducting oxide layer,wherein the metal layer is electrically connected to the transparent conducting oxide layer.2. The organic light-emitting diode according to claim 1 , wherein the transparent cover layer has at least one first hole claim 1 , through which the metal layer is electrically connected to the transparent conducting oxide layer.3. The organic light-emitting diode according to claim 1 , wherein a material of the transparent cover layer comprises a metal oxide having a dielectric constant ε in a range of ε>10.4. The organic light-emitting diode according to claim 3 , wherein the transparent cover layer is insulated.5. The organic light-emitting diode according to claim 3 , wherein the metal oxide is selected from a group of GaO claim 3 , CaO and WO.6. The organic light-emitting diode according to claim 1 , wherein the transparent cover layer has a thickness in a range of 1 ...

DISPLAY APPARATUS, AND APPARATUS AND METHOD OF MANUFACTURING THE SAME

A display apparatus includes a substrate including first and display areas, wherein the first display area includes first and second pixel areas and a transmission area; a first pixel disposed in the first pixel area and including a first pixel electrode, a first counter electrode, and a first intermediate layer between the first electrode and the first counter electrode; and a second pixel disposed in the second pixel area and including a second pixel electrode, a second counter electrode, and a second intermediate layer between the second pixel electrode and the second counter electrode. The first and second counter electrodes are disposed in the first and second pixel areas, and the first and the second counter electrodes include a first contact area where the first and the second pixel areas are adjacent to each other. A method of manufacturing the display apparatus is provided. 1. A display apparatus comprising:a substrate comprising a first display area and a second display area, the first display area comprising a first pixel area, a second pixel area, and a transmission area;a first pixel disposed in the first pixel area, the first pixel comprising a first pixel electrode, a first counter electrode, and a first intermediate layer disposed between the first pixel electrode and the first counter electrode; anda second pixel disposed in the second pixel area, the second pixel comprising a second pixel electrode, a second counter electrode, and a second intermediate layer disposed between the second pixel electrode and the second counter electrode, whereinthe first counter electrode is disposed in the first pixel area,the second counter electrode is disposed in the second pixel area, andthe first counter electrode and the second counter electrode comprise a first contact area where the first pixel area and the second pixel area are adjacent to each other.2. The display apparatus of claim 1 , whereinthe first counter electrode and the second counter electrode are ...

NANOWIRE-BASED TRANSPARENT CONDUCTORS AND APPLICATIONS THEREOF

A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, patternable and is suitable as a transparent electrode in visual display devices such as touch screens, liquid crystal displays, plasma display panels and the like. 181.-. (canceled)82. A method for providing electromagnetic shielding , comprising:providing a composite comprising a plurality of metallic nanowires and a matrix material;applying the composite to a substrate; and{'sup': '8', 'forming a conductive layer comprising the plurality of metallic nanowires dispersed in the matrix material, the conductive layer having a surface conductivity of no more than 10Ω/square, wherein the conductive layer is configured to provide electromagnetic shielding.'}83. The method of claim 82 , wherein the conductive layer is optically clear.84. A transparent conductor claim 82 , comprising:a substrate; and a first region comprising nanowires embedded in a matrix; and', the second region has a higher resistivity than the first region, and', 'the first region and the second region have substantially the same optical properties., 'a second region comprising treated nanowires embedded in the matrix, wherein], 'a conductive layer comprising85. The transparent conductor of claim 84 , wherein the nanowires of the first region are metal nanowires.86. The transparent conductor of claim 85 , wherein the treated nanowires of the second region comprise oxidized metal nanowires.87. The transparent conductor of claim 85 , wherein the treated nanowires of the second region comprise sulfided metal nanowires.88. The transparent conductor of claim 84 , wherein the treated nanowires of the second region are shorter than the nanowires of the first region.89. The transparent conductor of claim 84 , wherein the second region is more resistive than the first region by ...

ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

An organic light emitting device includes an anode, the anode including a conductive polymer, a fluorine-containing organic material, and metal nanoparticles, a cathode facing the anode, and an emission layer between the anode and the cathode. 1. An organic light emitting device , comprising:an anode, the anode including a conductive polymer, a fluorine-containing organic material, and metal nanoparticles;a cathode facing the anode; andan emission layer between the anode and the cathode.2. The organic light emitting device as claimed in claim 1 , wherein concentration of the fluorine-containing organic material in the anode increases toward the emission layer.6. The organic light emitting device as claimed in claim 2 , wherein the fluorine-containing organic material is represented by the following Formula 4:{'br': None, 'sup': f', 'h', 'a, 'sub': n', 'm', 'r', 'p, 'X-M-M-M-(G)\u2003\u2003[Formula 4]'}wherein:X is a terminal group;{'sup': 'f', 'sub': '1-20', 'Mrepresents a unit derived from a fluorinated monomer obtained through condensation reaction of perfluoropolyether alcohol, polyisocyanate, and isocyanate reactive-non-fluorinated monomer, or a fluorinated Calkylene group;'}{'sup': 'h', 'Mrepresents a unit derived from a non-fluorinated monomer;'}{'sup': 'a', 'sub': 4', '5', '6, 'Mrepresents a unit having a silyl group represented by —Si(Y)(Y)(Y);'}{'sub': 4', '5', '6', '1', '20', '6', '30', '4', '5', '6, 'Y, Y, and Yare independently a halogen atom, a substituted or unsubstituted C-Calkyl group, a substituted or unsubstituted C-Caryl group, or a hydrolysable substituent, at least one of Y, Y, and Ybeing the hydrolysable substituent;'}G is an organic group including a chain transfer agent residue;n is a number from 1 to 100;m is a number from 1 to 100;r is a number from 1 to 100; andp is a number from 0 to 10.7. The organic light emitting device as claimed in claim 2 , wherein the conductive polymer includes one or more of polythiophene claim 2 , polyaniline ...

METHOD OF MANUFACTURING FILM FORMATION SUBSTRATE, AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE

A vapor deposition device () in accordance with the present invention includes: a vapor deposition source () which has a plurality of injection holes () from which vapor deposition particles are to be injected towards a film formation substrate (); a plurality of pipes (and ); a vapor deposition source crucible () for supplying the vapor deposition particles to the vapor deposition source (); and moving means for moving the film formation substrate () relative to the vapor deposition source (). The pipes (and ) are connected to first and second sides of the vapor deposition source () on one end side and the other end side, respectively, of a line of the injection holes (). 111-. (canceled)12. A method of manufacturing a film formation substrate on which vapor deposition particles have been deposited by forming a film on the film formation substrate , comprising the steps of:(a) while supplying, via a pipe, the vapor deposition particles to a vapor deposition source which has a plurality of injection holes arranged in one or more lines, injecting the vapor deposition particles from the plurality of injection holes towards the film formation substrate, the pipe being connected to a first side of the vapor deposition source on one end side of the one or more lines of the plurality of injection holes; and(b) after the step (a), while supplying, via a pipe, the vapor deposition particles to the vapor deposition source, injecting the vapor deposition particles from the plurality of injection holes towards the film formation substrate, the pipe being connected to a second side of the vapor deposition source on the other end side of the one or more lines of the plurality of injection holes,an introduction path for the vapor deposition particles being changed so that (i) during a time when the film formation substrate is scanned in a forth direction, in the step (a), the vapor deposition particles are supplied to the vapor deposition source via the pipe connected to the ...

PHOTORESIST COMPOSITION, PIXEL DEFINITION LAYER, DISPLAY SUBSTRATE AND METHOD FOR PREPARING THE SAME, AND DISPLAY DEVICE

The present disclosure provides a photoresist composition, a pixel definition layer, a display substrate and a method for preparing the same, and a display device. The photoresist composition includes: 5 to 25 wt % of polymethacrylate; 1 to 15 wt % of a lyophobic compound; 1 to 5 wt % of a temperature sensitive polymer; 0.5 to 2 wt % of a photoinitiator; and 0.1 to 1 wt % of a monomer. 1. A photoresist composition , comprising:5 to 25 wt % of polymethacrylate;1 to 15 wt % of a lyophobic compound;1 to 5 wt % of a temperature sensitive polymer;0.5 to 2 wt % of a photoinitiator; and0.1 to 1 wt % of a monomer.2. The photoresist composition of claim 1 , comprising:5 to 25 wt % of polymethacrylate;3 to 10 wt % of the lyophobic compound;3 to 5 wt % of the temperature sensitive polymer;0.5 to 2 wt % of the photoinitiator; and0.1 to 1 wt % of the monomer.3. The photoresist composition of claim 1 , wherein a mass ratio of the lyophobic compound to the temperature sensitive polymer is 1:1 to 3:1.4. The photoresist composition of claim 1 , wherein a mass ratio of the lyophobic compound to the temperature sensitive polymer is 1:1 to 2:1.5. The photoresist composition of claim 1 , further comprising:0.1 to 1 wt % of an additive and a balance of a solvent.6. The photoresist composition of claim 1 , wherein the temperature sensitive polymer is poly(N-isopropylacrylamide) or oligomeric polyethyleneglycol methyl ether methacrylate.7. The photoresist composition of claim 1 , wherein the lyophobic compound is fluorine-containing polymethyl methacrylate.8. The photoresist composition of claim 1 , wherein the photoinitiator is one or more of nitroaniline claim 1 , anthraquinone claim 1 , benzophenone claim 1 , and N-acetyl-4-nitronaphthylamine.9. The photoresist composition of claim 1 , wherein the monomer is one or more of dipentaerythritol pentaacrylate claim 1 , dipentaerythritol hexaacrylate claim 1 , polyurethane acrylate claim 1 , and ethoxylated pentaerythritol tetraacrylate.10. ...

DISPLAY HAVING A TRANSPARENT CONDUCTIVE OXIDE LAYER COMPRISING METAL DOPED ZINC OXIDE APPLIED BY SPUTTERING

The invention provides an alternative liquid crystal and light emitting display which include at least one Transparent Conductive Oxide layers which comprises a zinc oxide doped with a group III, IV, V, or transition metal dopant, and sputtered from a sputtering target. In a further embodiment, this Transparent Conductive Oxide layer can optionally include a layer of a patternable TCO, such as ITO. 1. A liquid crystal display having at least the following layers:a front polarizer, a transparent substrate of glass or plastic,a first transparent conductive oxide having a transmittance in the visible wavelength of at least 80% and comprising a layer of metal doped zinc oxide applied by sputtering,a liquid crystal alignment layer,a liquid crystal layer, anda second transparent conductive oxide layer including a pattern in the layer.2. A liquid crystal display as set forth in wherein the second transparent conductive oxide layer includes a pattern in the layer.3. A liquid crystal display as set forth in wherein the second transparent conductive comprises indium tin oxide.4. A liquid crystal display as set forth in wherein the first transparent conductive layer is from about 10 to about 2000 nm in thickness.5. A liquid crystal display as set forth in wherein the first transparent conductive layer is from about 50 to about 400 nm in thickness.6. A liquid crystal display as set forth in wherein the first transparent conductive layer is deposited using a sputtering target by magnetron sputtering or by pulsed laser deposition.7. A liquid crystal display as set forth in wherein the target comprises zinc oxide doped with a metal at a level of level of from 0.05% to 5%.8. A liquid crystal display as set forth in wherein the metal used for the doping comprises one or more of aluminum or gallium alone claim 1 , or in combination with each other claim 1 , and one or more of indium or silicon.9. A device having at least the following layers:a transparent substrate of glass or ...

ELECTRODE CONTACTS

A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings. 120-. (canceled)21. A device structure comprising:a material structure including atop surface and aside wall integral with and joining the top surface;at least one material layer deposited on the material structure, the at least one material layer being continuous on a first area of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall, the second portion of the sidewall located between the first area of the material structure and the first portion of the sidewall; anda second layer deposited on the at least one material layer, the second layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall and in the first area of the material structure, the at least one material layer comprising material different from a material of the second layer.22. The device structure of claim 21 , wherein the second layer comprises a first conductive layer and the material structure ...

Method for producing an electronic component and electronic component

A method for producing an electronic component with at least one first electrode zone ( 21 ) and one second electrode zone ( 23 ), which are separated from one another by an insulator ( 9 ) and each comprise at least one sublayer of a first electrically conductive material. Also disclosed is an electronic component, which may be produced using the disclosed method.

ORGANIC ELECTROLUMINESCENT DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

The present disclosure provides an organic electroluminescent display substrate and a manufacturing method thereof, and a display device. The organic electroluminescent display substrate includes a base substrate and a plurality of pixel units formed on the base substrate, the pixel unit including a light-emitting region and a non-light-emitting region. An organic electroluminescent structure is formed in the light-emitting region, the organic electroluminescent structure including a first electrode layer, an organic luminescent functional layer and a second electrode layer stacked on the base substrate, the second electrode layer including a first portion in the light-emitting region and a second portion in the non-light-emitting region, and a plurality of organic/inorganic material layers are provided between the second electrode layer and the base substrate, the plurality of organic/inorganic material layers including at least the organic luminescent functional layer in the light-emitting region and including a transparent material layer in the non-light-emitting regions of parts of pixel units. 1. An organic electroluminescent display substrate comprising a base substrate and a plurality of pixel units formed on the base substrate , the pixel unit comprising a light-emitting region and a non-light-emitting region , wherein ,an organic electroluminescent structure is formed in the light-emitting region, the organic electroluminescent structure comprising a first electrode layer, an organic luminescent functional layer and a second electrode layer stacked on the base substrate, the second electrode layer comprising a first portion in the light-emitting region and a second portion in the non-light-emitting region, and wherein,a plurality of organic/inorganic material layers are provided between the second electrode layer and the base substrate, the plurality of organic/inorganic material layers comprising at least the organic luminescent functional layer in the ...

TRANSPARENT SUPPORTED ELECTRODE FOR OLED

A supported transparent electrode for an OLED, includes, in succession: (i) a transparent substrate made of mineral glass; (ii) a scattering layer formed from a high-index enamel containing at least 30% by weight BiO; (iii) a barrier layer of at least one dielectric metal oxide chosen from the group consisting of AlO, TiO, ZrOand HfO, deposited by ALD; and (iv) a layer of a transparent conductive oxide (TCO). 1. Supported transparent electrode for an OLED , comprising , in succession:(i) a transparent substrate made of mineral glass;{'sub': 2', '3, '(ii) a scattering layer formed from a high-index enamel containing at least 30% by weight BiO;'}{'sub': 2', '3', '2', '2', '2, '(iii) a barrier layer of at least one dielectric metal oxide chosen from the group consisting of AlO, TiO, ZrOand HfO, deposited by ALD; and'}(iv) a layer of a transparent conductive oxide (TCO).2. The electrode according to claim 1 , wherein the barrier layer deposited by ALD comprises a plurality of AlOlayers in alternation with layers of oxides of higher indices (n>2) chosen from TiO claim 1 , ZrO claim 1 , and HfO.3. The electrode according to claim 1 , further comprising a metal grid under or over the TCO layer and making direct contact therewith.4. The electrode according to claim 1 , wherein the barrier layer deposited by ALD is comprised between 5 and 200 nm in thickness.5. The electrode according to claim 1 , wherein the high-index enamel forming the scattering layer contains elements that scatter light claim 1 , dispersed through the thickness of the layer.6. The electrode according to claim 1 , wherein the interface between the high-index enamel and the underlying transparent substrate made of mineral glass has a roughness profile with an arithmetic mean deviation Rat least equal to 0.1 μm.7. OLED comprising an electrode according to .8. Process for manufacturing a supported transparent electrode for an OLED according to claim 1 , comprising the following successive steps:{'sub': 2', ...

Organic light-emitting diode packaging structure, method for packaging organic light-emitting diode, and display device

The present disclosure provides an organic light-emitting diode packaging structure, a method for packaging an organic light-emitting diode and a display device. The packaging structure includes: a display area of an organic light-emitting diode arranged on a substrate; a cathode pattern arranged on the display area; a first inorganic blocking layer arranged on the cathode pattern; an organic buffer layer arranged on the first inorganic blocking layer, wherein the organic buffer layer is electrically connected at its edge to the cathode pattern in a peripheral area of the display area; and a second inorganic blocking layer, wherein the second inorganic blocking layer is connected directly at its edge to the substrate in the peripheral area of the display area, so as to cover all the other layers.

MANUFACTURING DEVICE AND MANUFACTURING METHOD OF LIGHT-EMITTING ELEMENT

Disclosed is a manufacturing apparatus of a light-emitting element including: a main transporting route extending in a first direction, the main transporting route comprising first and second transfer devices connected through a first transporting chamber; a sub-transporting route extending in a second direction intersecting the first direction, the sub-transporting route comprising a second transporting chamber connected to the first or second transfer device and a delivery chamber connected to the second transfer chamber; and a plurality of first treatment chambers connected to the delivery chamber. The main transporting route is configured to transfer a substrate to be treated in a horizontal state, and one of the plurality of treatment chambers is configured to hold the substrate in a vertical state during treatment. 1. A manufacturing apparatus of a light-emitting element , the manufacturing apparatus comprising:a main transporting route extending in a first direction, the main transporting route comprising first and second transfer devices connected through a first transporting chamber; a second transporting chamber connected to the first or second transfer device; and', 'a delivery chamber connected to the second transfer chamber; and, 'a sub-transporting route extending in a second direction intersecting the first direction, the sub-transporting route comprisinga plurality of first treatment chambers connected to the delivery chamber,wherein the main transporting route is configured to transfer a substrate to be treated in a horizontal state, andone of the plurality of treatment chambers is configured to hold the substrate in a vertical state during treatment.2. The manufacturing apparatus according to claim 1 ,wherein another one of the plurality of first treatment chambers is configured to hold the substrate in a horizontal state.3. The manufacturing apparatus according to claim 1 ,wherein the main transporting route has an unicursal shape.4. The ...

CATHODE BUFFER MATERIALS AND RELATED DEVICES AND METHODS

The present invention generally relates to cathode buffer materials and devices and methods comprising the cathode buffer materials. 1. An electromagnetic radiation absorbing and/or emitting device , comprising:a conductive polymer as a cathode buffer material, wherein the conductive polymer is formed by oxidative chemical vapor deposition.2. An electromagnetic radiation absorbing and/or emitting device , comprising:a conductive polymer as a cathode buffer material, wherein conductive polymer is formable by oxidative chemical vapor deposition.3. An electromagnetic radiation absorbing and/or emitting device , comprising:reduced poly(3,4-ethylenedioxythiophene) as a cathode buffer material.4. A method of forming an electromagnetic radiation absorbing and/or emitting device , comprising:providing a substrate associated with a cathode; anddepositing a cathode buffer material on at least a portion of the cathode via oxidative chemical vapor deposition, wherein the cathode buffer material comprises a conductive polymer.5. A method of forming an electromagnetic radiation absorbing and/or emitting device , comprising:providing a substrate associated with a cathode;depositing a cathode buffer material on at least a portion of the cathode, wherein the cathode buffer material comprises a conductive polymer; andexposing the cathode buffer material to a reducing agent, thereby reducing at least a portion of the conductive polymer.6. The method of claim 5 , wherein the cathode buffer material is deposited using oxidatvie chemical vapor deposition.7. The method or device as in any preceding claim claim 5 , wherein the oxidative chemical vapor deposition comprises:providing a vapor-phase monomer species and a vapor-phase oxidizing agent to produce a vapor comprising a conductive polymer precursor;contacting the vapor with the surface of a cathode to form the cathode buffer material.8. The method or device as in any preceding claim claim 5 , wherein the vapor-phase monomer species ...

ORGANIC ELECTROLUMINESCENCE PANEL AND METHOD FOR PRODUCING THE SAME

In an organic EL panel, a transparent conductive film, a functional layered body including at least one light-emitting layer, and an opposing electrode film are layered in this order on a substrate, and the light-emitting layer which overlaps the transparent conductive film and the opposing electrode film serves as a light-emitting portion. The organic EL panel has at least one auxiliary electrode that is formed on the substrate below the light-emitting portion and directly covered with the transparent conductive film. The transparent conductive film has a film thickness more than that of the auxiliary electrode and the side surface of the transparent conductive film is covered with the functional layered body. 1. An organic EL panel including a substrate , a transparent conductive film layered on the substrate , a functional layered body that is layered on the transparent conductive film and includes at least one light-emitting layer , and an opposing electrode film layered on the functional layered body , wherein the light-emitting layer that is disposed between the transparent conductive film and the opposing electrode film and overlaps the transparent conductive film and the opposing electrode film serves as a light-emitting portion , the organic EL panel comprising:at least one auxiliary electrode that is formed on the substrate below the light-emitting portion and directly covered with the transparent conductive film,wherein the transparent conductive film has a film thickness more than that of the one auxiliary electrode, anda side surface of the transparent conductive film is covered with the functional layered body.2. The organic EL panel according to claim 1 , wherein a layer in contact with the transparent conductive film in the functional layered body is formed by a wet coating method and has a film thickness more than that of the at least one auxiliary electrode.3. The organic EL panel according to claim 1 , wherein the transparent conductive film is ...

LIGHT EMITTING PHOTOTRANSISTOR

A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer. 1. A photonic conversion device , comprising:a photoactive layer;a porous conductor layer;a dielectric layer between the photoactive layer and the porous conductor layer;an electron transport layer in contact with the porous conductor layer; anda light emitting device in contact with the electron transport layer.2. The photonic conversion device of claim 1 , further comprising a first electrode in contact with the light emitting device and a second electrode in contact with the photoactive layer claim 1 , wherein the first electrode and second electrode are each electrically connected to the porous conductor layer through a respective bias voltage source.3. The photonic conversion device of claim 1 , wherein the porous conductor layer is transparent.4. The photonic conversion device of claim 1 , wherein the porous conductor layer includes a plurality of holes extending through the porous conductor layer.5. The photonic conversion device of claim 4 , wherein the transparent conductor is indium tin oxide (ITO).6. The photonic conversion device of claim 4 , wherein the plurality of holes each have a diameter between 0.1 μm and 10 μm.7. The photonic conversion device of claim 1 , wherein the electron transport layer comprises fullerene.8. The ...

METHOD FOR PRODUCING VAPOR DEPOSITION MASK, AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side. 1. A method for producing a vapor deposition mask that is formed by a metal mask provided with a slit , and a resin mask that is positioned on a front surface of the metal mask , and has openings corresponding to a pattern to be produced by vapor deposition arranged in a plurality of rows being stacked on each other , comprising the steps of:preparing a metal plate with a resin layer in which a resin layer is provided on one surface of the metal plate;forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer; andforming a resin mask by forming the openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows in the resin layer by emitting a laser from the metal mask side.2. The method for producing a vapor deposition mask according to claim 1 ,wherein the step of forming the metal mask with a resin layer isa step of forming a resist pattern by coating a surface where a resin layer is not provided, of the metal plate with the resin layer, with a resist material, masking the resist ...

Method for manufacturing diode

The present invention discloses a diode and a manufacturing method thereof and a display apparatus. The diode comprises a composite anode, a transparent metal oxide layer, a basic stack layer, and a composite cathode. The composite anode comprises a transparent anode layer and a first transparent metal layer. The first transparent metal layer is formed on the transparent anode layer. The transparent metal oxide layer is formed on the first transparent metal layer. The basic stack layer is formed on the transparent metal oxide layer. The composite cathode comprises two second transparent metal layers. The two second transparent metal layers are formed on the basic stack layer. Both transmittance and efficiency of the diode are significantly improved. The reliability of the diode is improved to elongate the lifetime of the diode.

CONDUCTOR AND METHOD OF MANUFACTURING THE SAME

A conductor includes (i) a substrate, (ii) a transparent conductive film formed on the substrate and including a silver nanowire, (iii) a metal film formed over the transparent conductive film such that at least a portion thereof overlaps the transparent conductive film, and (iv) a buffer film provided between the transparent conductive film and the metal film, the buffer film having adhesion to each of the transparent conductive film and the metal film, and not impeding conductivity between the transparent conductive film and the metal film. Preferably, the buffer film is formed of an organic material having respective functional groups capable of bonding to the transparent conductive film and the metal film. 1. A conductor comprising:a substrate;a transparent conductive film formed on the substrate, the transparent conductive film including a silver nanowire; anda metal film formed over the transparent conductive film such that at least a portion thereof overlaps the transparent conductive film; anda buffer film provided between the transparent conductive film and the metal film, the buffer film having adhesion to each of the transparent conductive film and the metal film, and not impeding conductivity between the transparent conductive film and the metal film.2. The conductor according to claim 1 , wherein the buffer film is formed of an organic material having respective functional groups capable of bonding to the transparent conductive film and the metal film.3. The conductor according to claim 2 , wherein the organic material is a triazine compound having an alkoxy group and a thiol group claim 2 , or having an alkoxy group and an azide group.5. The conductor according to claim 2 , wherein the organic material is treated by a heat treatment.6. The conductor according to claim 1 , wherein the metal film is formed of Cu.7. A method of manufacturing a conductor claim 1 , comprising:providing a substrate having a transparent conductive film including a silver ...

METHOD OF FABRICATING AN ORGANIC PHOTODIODE WITH DUAL ELECTRON BLOCKING LAYERS

Embodiments of forming an image sensor with an organic photodiode are provided. The organic photodiode uses dual electron-blocking layers formed next to the anode of the organic photodiode to reduce dark current. By using dual electron-blocking layers, the values of highest occupied molecular orbital (HOMO) for the neighboring anode layer and the organic electron-blocking layer are matched by one of the dual electron-blocking layers to form a photodiode with good performance. The values of the lowest occupied molecular orbital (LOMOs) of the dual electron-blocking layers are selected to be lower than the neighboring anode layer to reduce dark current. 1. A method of forming an organic photodiode , comprising:forming a first electrode layer;{'sub': 2', '5, 'depositing by physical vapor deposition (PVD) a first electron-blocking layer of VOover the first electrode layer;'}{'sub': '3', 'depositing a second electron-blocking layer using PVD over the first electron-blocking layer, wherein the second electron-blocking layer includes MoO;'}forming an organic P-type layer over the second electron-blocking layer;forming an organic active layer over the organic P-type layer;forming an organic N-type layer over the organic active layer;forming a hole-blocking layer over the organic N-type layer; andforming a second electrode layer over the hole-blocking layer.2. The method of claim 1 , wherein the organic active layer formed is a blend of materials used to form the organic hole-transport layer and the organic electron-transport layer claim 1 , wherein the blend forms bulk heterojunction.3. The method of claim 1 , wherein the second electron-blocking layer is deposited having a first thickness and the first electron-blocking layer is deposited having a second thickness claim 1 , the first thickness less than the second thickness.4. The method of claim 3 , wherein the second thickness is about 10 nm and the first thickness is about 2 nm.5. The method of claim 1 , further ...

ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

An organic light-emitting device includes a substrate, a bottom electrode on the substrate, an organic light-emitting layer on the bottom electrode, and a top electrode on the organic light-emitting layer, wherein the top electrode includes a first electrode part, a grid-shaped or plate-shaped second electrode part on the first electrode part, and an adhesive layer on the second electrode part. 1. An organic light-emitting device comprising:a substrate;a bottom electrode on the substrate;an organic light-emitting layer on the bottom electrode; anda top electrode on the organic light-emitting layer,wherein the top electrode comprises a first electrode part, a grid-shaped second electrode part on the first electrode part, and an adhesive layer on the second electrode part.2. The organic light-emitting device of claim 1 , wherein the first electrode part comprises graphene.3. The organic light-emitting device of claim 1 , wherein the first electrode part and the adhesive layer are spaced apart from each other in a direction perpendicular to a top surface of the first electrode part.4. The organic light-emitting device of claim 1 , wherein the second electrode part is surrounded by the adhesive layer claim 1 , anda bottom surface of the second electrode part is in contact with a top surface of the first electrode part.5. The organic light-emitting device of claim 1 , wherein the second electrode part comprises any one of a metal claim 1 , metal nanoparticles claim 1 , and metal nanowires.6. The organic light-emitting device of claim 1 , further comprising a conductive polymer between the first electrode part and the second electrode part.7. A method of manufacturing an organic light-emitting device claim 1 , the method comprising:providing a substrate;forming a bottom electrode on the substrate;forming an organic light-emitting layer on the bottom electrode; andtransferring a top electrode on the organic light-emitting layer,wherein the transferring of the top electrode ...

METHOD FOR MANUFACTURING ELECTRONIC ELEMENT INCLUDING TRANSPARENT CONDUCTIVE STRUCTURE

Provided is a method for manufacturing an electronic device including a transparent conductive structure, the method including preparing a transparent electrode in which, among a first region and a second region, the first region is selectively surface-modified, preparing a mixed composition including a first composition and a second composition having a different polarity from the first composition, and applying the mixed composition onto the transparent electrode, wherein the applied mixed composition is disposed in the surface modified first region, and the mixed composition disposed in the first region is phase-separated into a first composition layer and a second composition layer disposed on the first composition layer. 1. A method for manufacturing an electronic device including a transparent conductive structure , the method comprising:preparing a transparent electrode including a first region and a second region, the first region being selectively surface-modified;preparing a mixed composition including a first composition and a second composition having a different polarity from the first composition; andapplying the mixed composition onto the transparent electrode, whereinthe applied mixed composition is disposed in the surface modified first region, andthe mixed composition disposed in the first region is phase-separated into a first composition layer and a second composition layer disposed on the first composition layer.2. The method of claim 1 , wherein the preparation of the transparent electrode comprises:placing on the transparent electrode a mask having an opening formed therein, the mask being placed so as to cover the second region; andforming the first region by modifying the surface of the transparent electrode exposed by the opening of the mask.3. The method of claim 2 , wherein the modification of the surface of the transparent electrode comprises at least one of a plasma treatment claim 2 , an ozone treatment claim 2 , irradiation with ...

ELECTRODE CONTACTS

A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings. 120-. (canceled)21. A device comprising:a backplane;a first conductor layer on the backplane, the first conductor layer having a pattern with a plurality of edges;a semiconductor layer deposited on the first conductor layer; anda second conductor layer deposited on the semiconductor layer, the second conductor layer in contact with the first conductor layer on at least one of the plurality of edges, a resistance of the first conductor layer less than a resistance of the second conductor layer.22. The device of claim 21 , wherein the first conductor layer includes a plurality of strips.23. The device of claim 21 , wherein the first conductor layer includes a mesh structure having openings with the plurality of edges.24. The device of claim 21 , wherein the second conductor layer is transparent.25. The device of claim 21 , wherein the semiconductor layer comprises organic material forming part of one or more organic light emitting diodes.26. The device of claim 21 , wherein a thickness of the semiconductor layer is less than a thickness of the first conductor layer.27. The device of claim 26 , wherein claim 26 ...

Semiconductor elements and method for manufacturing the same

The present embodiments provide a semiconductor element comprising a first electrode, an active layer, a second electrode comprising a homogeneous metal layer, and further a barrier layer comprising a transparent metal oxide. The barrier layer is placed between the active layer and the second electrode. The present embodiments also provide a method for manufacturing said semiconductor element.

SUBSTRATE IMPRINTED WITH A PATTERN FOR FORMING ISOLATED DEVICE REGIONS

An example provides a method for forming an apparatus including a substrate imprinted with a pattern for forming isolated device regions. A method may include imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions at a first level and a plurality of elevated regions at a second level, and depositing a first layer of conductive material over the patterned substrate with a plurality of breaks to form a plurality of bottom electrodes. The method may include depositing a layer of an active stack, with a second layer of conductive material, over the plurality of bottom electrodes to form a plurality of devices on the plurality of recessed regions isolated from each other by the plurality of elevated regions. 1. A method for making an electronic device , comprising:imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions at a first level and a plurality of elevated regions at a second level;depositing a first layer of conductive material over the patterned substrate with a plurality of breaks to form a plurality of bottom electrodes; anddepositing a layer of an active stack, with a second layer of conductive material, over the plurality of bottom electrodes to form a plurality of devices on the plurality of recessed regions isolated from each other by the plurality of elevated regions.2. The method of claim 1 , further comprising bonding the plurality of devices onto another substrate.3. The method of claim 2 , wherein said bonding the plurality of devices comprises laminating the plurality of devices onto the other substrate using a conductive adhesive.4. The method of claim 1 , wherein said depositing the first layer of conductive material comprises depositing the first layer of conductive material at an angle with respect to a major surface of the patterned substrate.5. The method of claim 1 , wherein said depositing the ...

ORGANIC ELECTRONIC DEVICE AND METHOD OF MANUFACTURE

An organic electronic device (e.g. OLED, OPV, OES, OTFT) is disclosed. The organic electronic device includes a carrier substrate, a first electrode layer disposed on the carrier substrate, an organic active electronic region disposed on the first electrode layer, and an indium second electrode layer disposed and formed on the organic active electronic region by applying heat on an indium solid at a temperature between the melting temperature of indium and a threshold operating temperature of the organic layers to melt the indium solid on the organic active electronic region. The organic active electronic region includes one or more organic layers. A method of manufacturing an organic electronic device is also disclosed. 1. An organic electronic device , comprising:a carrier substrate;a first electrode layer disposed on the carrier substrate;an organic active electronic region disposed on said first electrode layer, said organic active electronic region comprising one or more organic layers; andan indium second electrode layer disposed on said organic active electronic region by applying heat on an indium solid at a temperature between a melting temperature of indium and a threshold operating temperature of at least one of said organic layers to substantially melt said indium solid onto the organic active electronic region, thereby forming said indium second electrode layer.2. The organic electronic device according to claim 1 , wherein said indium second electrode layer has a thickness greater than 1 micrometer (μm).3. The organic electronic device according to claim 1 , wherein said first electrode layer has a thickness between 80 nanometers (nm) and 200 nanometers (nm).4. The organic electronic device according to wherein said organic electronic device comprises at least one of:an organic photovoltaic device, wherein said organic active electronic region comprises a photoactive layer disposed on said first electrode layer;an organic light emitting diode device, ...

Non-Polar Solvents As An Adhesion Promoter Additive In PEDOT/PSS Dispersions

Described is a process for the preparation of a layered body, the process comprising the steps: I) providing a photoactive layer; II) superimposing the photoactive layer with a coating composition comprising a) an electrically conductive polymer, b) an organic solvent; and III) at least partially removing the organic solvent b) from the composition obtaining an electrically conductive layer superimposing the photoactive layer. Also described is a layered body obtained by this process, a layered body, an organic photovoltaic cell, a solar cell module, a composition, and the use of a composition. 1. A process for the production of a layered body , the process comprising the steps:I) providing a photoactive layer; a) an electrically conductive polymer,', 'b) an organic solvent) and, 'II) superimposing the photoactive layer with a coating composition comprising'}III) at least partially removing the organic solvent b) from the coating composition superimposed in process step II) to obtain an electrically conductive layer superimposed on the photoactive layer.2. The process of claim 1 , wherein the coating composition further comprises a surfactant c).3. The process of claim 2 , wherein the coating composition further comprises an adhesion promoter additive d) that is a further organic solvent which differs from component b) and component c) and is miscible with component b) claim 2 , wherein the photoactive layer is soluble in the adhesion promoter additive.4. The process of claim 1 , wherein the photoactive layer is a non-polar layer.5. The process of claim 1 , wherein the photoactive layer comprises hydrophobic compounds which are a mixture of poly-3-hexylthiophene and phenyl-C61-butyric acid-methyl ester (P3HT:PCBM).6. The process of claim 1 , wherein the electrically conductive polymer a) is a cationic polythiophene claim 1 , which is present in the form of ionic complexes of the cationic polythiophene and a polymeric anion as the counter-ion.7. The process of claim ...

ORGANIC EL ELEMENT AND METHOD FOR MANUFACTURING SAME

Provided is an organic EL element which has excellent luminous efficiency by improving the cathode. An organic EL element which is configured of a cathode, an anode and one or more organic compound layers provided between the electrodes, and wherein the cathode is formed of a transparent conductive film that is formed on a glass substrate and is configured from an indium oxide compound and an element having a high work function, so that the cathode has a high work function matched to the HOMO of an organic hole transport layer among the organic compound layers. Consequently, holes can be easily injected from the cathode to the organic hole transport layer, and the present invention is therefore suitable for manufacturing an organic EL element having excellent luminous efficiency. 1. An organic EL element comprising:a transparent substrate;a cathode formed on the transparent substrate;a one or more-layered organic compound layer formed on the cathode; andan anode formed on the organic compound layer,wherein the cathode is a transparent conductive film including an indium oxide compound and a noble metal element-containing conductive oxide.2. The organic EL element according to claim 1 ,wherein the transparent conductive film comprises:a first transparent conductive film being disposed on a side of the transparent substrate, including the indium oxide compound but not including the noble metal element; anda second transparent conductive film being disposed on a side of the organic compound layer and including the indium oxide compound and the noble metal element.3. The organic EL element according to claim 1 , wherein an addition amount of the noble metal element of the noble metal element-containing conductive oxide falls within a range larger than 0 at. % and smaller than 50 at. % in relation to a total amount of the noble metal element and an indium element of the indium oxide compound.4. The organic EL element according to claim 1 , wherein the noble metal element ...

Manufacturing method of a light emitting device

Disclosed is a manufacturing apparatus of a light-emitting element including: a main transporting route extending in a first direction, the main transporting route comprising first and second transfer devices connected through a first transporting chamber; a sub-transporting route extending in a second direction intersecting the first direction, the sub-transporting route comprising a second transporting chamber connected to the first or second transfer device and a delivery chamber connected to the second transfer chamber; and a plurality of first treatment chambers connected to the delivery chamber. The main transporting route is configured to transfer a substrate to be treated in a horizontal state, and one of the plurality of treatment chambers is configured to hold the substrate in a vertical state during treatment.

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A display device including a substrate, a source electrode and a drain electrode on the substrate, the source electrode and the drain electrode being spaced apart from each other, a first planarization layer on the source electrode and the drain electrode, a second planarization layer on the first planarization layer, and a first electrode on the second planarization layer. A step difference between a top of the first planarization layer and a top of the drain electrode is 100 Å or less. 1. A display device , comprising:a substrate;a source electrode and a drain electrode on the substrate, the source electrode and the drain electrode being spaced apart from each other;a first planarization layer on the source electrode and the drain electrode;a second planarization layer on the first planarization layer; anda first electrode on the second planarization layer,wherein a step difference between a top of the first planarization layer and a top of the drain electrode is 100 Å or less.2. The display device as claimed in claim 1 , wherein a step difference between highest and lowest portions in an upper surface of the first electrode is 70 nm or less.3. The display device as claimed in claim 1 , wherein the first planarization layer includes one or more selected from a polyimide claim 1 , a polyacryl claim 1 , and a polysiloxane.4. The display device as claimed in claim 1 , wherein the first planarization layer has a thickness of 0.8 μm.5. The display device as claimed in claim 1 , wherein the first planarization layer includes black pigment.6. The display device as claimed in claim 5 , wherein the black pigment includes black carbon.7. The display device as claimed in claim 1 , wherein the second planarization layer includes black pigment.8. A display device claim 1 , comprising:a substrate;a source electrode and a drain electrode on the substrate, the source electrode and the drain electrode being spaced apart from each other;a first planarization layer on the source ...

ELECTROLUMINESCENCE DEVICE AND MANUFACTURING METHOD THEREOF

Light emitted within an organic EL device is effectively utilized, and a pixel is provided for improving the extraction efficiency of the light. Light extraction is efficiency is improved without increasing a current by effectively utilizing guided wave light which is a cause of the loss of light emitted by an organic EL device. In order to achieve this, a stepped portion is arrange in an insulating layer provided over a lower layer of a first electrode including a light reflecting surface, and a peripheral area of the first electrode is formed so as to contact the stepped portion. The reflecting surface is formed curved towards a second electrode side in the peripheral area of the first electrode from the stepped portion, light guided through the organic EL layer is reflected by the reflecting surface and emitted from the second electrode side. 1. An electroluminescence device comprising:an insulating layer over a substrate;a first electrode including a light reflecting surface over the insulating layer;a bank layer covering a peripheral area of the first electrode;an electroluminescence layer over the first electrode;a second electrode having an optical transparency over the electroluminescence layer; andthe insulating layer including a stepped portion having a tilted surface curved towards the second electrode side in the peripheral area of the first electrode, and the peripheral area of the first electrode is provided along the tilted surface of the stepped portion.2. The electroluminescence device according to wherein a height of the stepped portion provided in the insulating layer is larger than a thickness of the electroluminescence layer.3. The electroluminescence device according to wherein a height of the stepped portion provided in the insulating layer is the same as the thickness or more of the bank layer.4. The electroluminescence device according to wherein a protruding part is provided over an upper side surface of the stepped portion provided in the ...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Embodiments of the present invention provide methods of fabricating features of a semiconductor device array, the method including patterning a dielectric layer deposited on a conductive carrier, wherein patterning comprises forming a trench pattern defining at least one device contact, electrodepositing metal into the patterned trenches, transferring the dielectric layer and the electrodeposited metal to a substrate and removing the conductive carrier, and the method further comprising lithographically fabricating one or more further features of the semiconductor device array overlying the dielectric layer and electrodeposited metal. 1. A method of fabricating features of a semiconductor device , the method comprising:patterning a dielectric layer deposited on a conductive carrier, wherein patterning comprises forming a trench pattern defining at least one device contact; electrodepositing metal into the patterned trenches;transferring the dielectric layer and the electrodeposited metal to a substrate and removing the conductive carrier; and the method further comprising:lithographically fabricating one or more further features of the semiconductor device overlying the dielectric layer and electrodeposited metal.2. The method of claim 1 , comprising lithographically fabricating the one or more further features prior to and/or subsequent to transferring the dielectric later and the electrodeposited metal to the substrate.3. The method of further comprising providing an adhesive layer between the substrate and the transferred dielectric layer and electrodeposited metal.4. The method of claim 1 , wherein patterning the dielectric layer further comprises photolithographically patterning the dielectric layer.5. The method of claim 1 , wherein the patterning the dielectric layer further comprises imprinting a pattern into the dielectric layer.6. The method of claim 1 , wherein the semiconductor device forms part of a semiconductor device array.7. The method of claim 6 , ...

CONDUCTIVE OXIDE FILM, DISPLAY DEVICE, AND METHOD FOR FORMING CONDUCTIVE OXIDE FILM

One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment. The conductive oxide film has a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film. 1. A method for forming a conductive oxide film comprising the steps of:forming a conductive oxide film over a substrate by a sputtering method at a substrate temperature of 200° C. or higher; andperforming nitrogen annealing treatment on the conductive oxide film.2. The method for forming a conductive oxide film according to claim 1 , wherein the step of forming the conductive oxide film is performed in an atmosphere including an argon gas.3. The method for forming a conductive oxide film according to claim 2 , wherein a percentage of the argon gas is more than or equal to 70%.4. The method for forming a conductive oxide film according to claim 1 , wherein a temperature in the nitrogen annealing treatment is higher than or equal to 350° C. 1. Field of the InventionThe present invention relates to a conductive oxide film, a display device, and a method for forming a conductive oxide film.The present invention relates to a conductive oxide film having a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film, and a method for forming the conductive oxide film. In addition, the present invention relates to a display device using such a conductive oxide film.2. Description of the Related ArtRecently, touch panels having a multi-touch function have widespread rapidly in accordance with the increasing demand for smartphones or tablet PCs. Transparent conductive oxide films are utilized in touch ...

PEROVSKITE SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

Provided is a perovskite solar cell including a substrate, a lower transparent electrode provided on the substrate, an upper transparent electrode provided on the lower transparent electrode, and a light absorption layer interposed between the lower transparent electrode and the upper transparent electrode, wherein the light absorption layer includes a perovskite material, and at least one of the lower transparent electrode or the upper transparent electrode includes a first color implementation layer, an intermediate layer, and a second color implementation layer, which are sequentially stacked, the first color implementation layer and the second color implementation layer each being a metal oxide layer containing a dopant. 1. A perovskite solar cell comprising:a substrate;a lower transparent electrode provided on the substrate;an upper transparent electrode provided on the lower transparent electrode; anda light absorption layer interposed between the lower transparent electrode and the upper transparent electrode;wherein the light absorption layer includes a perovskite material, andat least one of the lower transparent electrode or the upper transparent electrode includes a first color implementation layer, an intermediate layer, and a second color implementation layer, which are sequentially stacked,the first color implementation layer and the second color implementation layer each being a metal oxide layer containing a dopant.2. The perovskite solar cell of claim 1 , wherein the intermediate layer contains silver (Ag) claim 1 , gold (Au) claim 1 , aluminum (Al) claim 1 , copper (Cu) claim 1 , titanium (Ti) claim 1 , platinum (Pt) claim 1 , tungsten (W) claim 1 , nickel (Ni) claim 1 , and/or titanium nitride (TiN).3. The perovskite solar cell of claim 1 , wherein the dopant contains boron (B) claim 1 , aluminum (Al) claim 1 , gallium (Ga) claim 1 , indium (In) claim 1 , a lanthanide element claim 1 , and/or titanium (Ti).4. The perovskite solar cell of claim 1 , ...

METAL DEPOSITION USING ORGANIC VAPOR PHASE DEPOSITION (VPD) SYSTEM

A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film. 1. A method of depositing a film of a metallic material having a volatilization temperature higher than 350° C. from a source material , comprising:providing the source material in a vacuum deposition processing chamber, the vacuum deposition processing chamber having an internal pressure;providing a substrate in the vacuum deposition processing chamber, the substrate being maintained at a substrate temperature that is lower than the volatilization temperature and being spaced apart from, but in fluid communication with, said source material;reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals;volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; andtransporting said volatilized metal to said substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms said film.2. The ...

MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE

A manufacturing method of a thin film transistor array substrate is provided in the present disclosure. A third mask of the present disclosure is configured to perform a hydrophobic treatment on a surface of a photoresist to form a hydrophobic group. Presence of the hydrophobic group makes a solution type transparent metal and an OLED material not covered on the surface of the photoresist, thereby facilitating photoresist stripping, and promoting stripping efficiency and process efficiency. Existence of the photoresist makes the OLED material form a fixed pattern. One of the masks can be saved to lower product costs. 1. A manufacturing method of a thin film transistor array substrate , comprising:{'b': '110', 'a step S of using a first mask to form a gate electrode and a gate line of a thin film transistor on a surface of a substrate;'}{'b': '120', 'a step S of using a second mask to form an insulating layer of the gate electrode, an active layer, a source electrode, a drain electrode, and a passivation layer of the thin film transistor on the surface of the substrate;'}{'b': '130', 'a step S of coating a first photoresist layer on the passivation layer, wherein the first photoresist layer is exposed through a gray mask plate or a translucent mask plate to pattern the first photoresist layer to form a first photoresist region and a second photoresist region separate from each other;'}{'b': '140', 'a step S of removing portions of the passivation layer uncovered by the first photoresist region and the second photoresist region by an etching process to form a passivation layer via hole to expose the drain electrode;'}{'b': '150', 'claim-text': wherein the second photoresist region comprises a first photoresist sub-region and a second photoresist sub-region connected with each other, and a thickness of the first photoresist sub-region is less than a thickness of the second photoresist sub-region; and', {'b': '150', 'wherein the step S of performing the ashing treatment ...

PEDOT:PSS BASED ELECTRODE AND METHOD FOR MANUFACTURING THE SAME

The present disclosure provides a method for fabricating a PEDOT:PSS-based electrode, comprising the steps of: preparing a PEDOT:PSS thin film formed on a substrate; treating the thin film with a solution containing 75-100 vol % of sulfuric acid or a sulfuric acid derivative; separating the thin film from the solution and rinsing the separated thin film; and drying the rinsed thin film at a temperature between 60° C. and 160° C. The present disclosure also provides a PEDOT:PSS-based electrode fabricated by the method, and an organic electronic device including the electrode. 1. A method for fabricating a PEDOT:PSS-based electrode , comprising the steps of:preparing a PEDOT:PSS thin film formed on a substrate;treating the thin film with a solution containing 75-100 vol % of sulfuric acid or a sulfuric acid derivative;separating the thin film from the solution and rinsing the separated thin film; anddrying the rinsed thin film at a temperature between 60° C. and 160° C.2. The method of claim 1 , wherein the step of treating the thin film with the solution is performed for 1 minute or more.3. The method of claim 1 , wherein the step of separating the thin film from the solution and rinsing the separated thin film is performed to remove the sulfuric acid or sulfuric acid derivative attached to a surface of the PEDOT:PSS thin film or remove PSS separated from PEDOT:PSS.4. The method of claim 1 , wherein the step of separating the thin film from the solution and rinsing the separated thin film is performed using water.5. The method of claim 1 , wherein the step of treating the thin film with the solution is performed by immersing the thin film in the solution containing 75-100 vol % of the sulfuric acid or sulfuric acid derivative.6. The method of claim 1 , wherein the sulfuric acid or sulfuric acid derivative is selected from the group consisting of methansulfonic acid claim 1 , trifluoromethansulfonic acid claim 1 , sulfuric acid claim 1 , perchloric acid claim 1 , ...

Method for producing an organic component

According to the disclosure, a method for producing an organic component is provided. The method includes providing a carrier substrate; forming an electrically conductive layer on or above the carrier substrate; applying an electrical potential to the electrically conductive layer; and forming at least one organic, functional layer for forming the organic component on or above the electrically conductive layer at least partly during the process of applying the electrical potential to the electrically conductive layer. 1. A method for producing an organic component , the method comprising:providing a carrier substrate;forming an electrically conductive layer on or above the carrier substrate;applying an electrical potential to the electrically conductive layer; andforming at least one organic, functional layer for forming the organic component on or above the electrically conductive layer at least partly during the process of applying the electrical potential to the electrically conductive layer.2. The method as claimed in claim 1 ,wherein the electrically conductive layer is grounded during the process of applying the electrical potential.3. The method as claimed in claim 1 , further comprising:forming a first electrode; andforming a second electrode;wherein the at least one organic, functional layer is formed between the first electrode and the second electrode.4. The method as claimed in claim 3 ,wherein the electrically conductive layer is formed as part of the first electrode or forms the first electrode or is formed as part of the second electrode or forms the second electrode.5. The method as claimed in claim 3 ,wherein the first electrode and/or the second electrode are/isformed as transparent or translucent.6. The method as claimed in claim 3 , further comprising:forming an encapsulation on or above the second electrode.7. The method as claimed in claim 6 , further comprising:wherein the encapsulation is formed from a metal or the encapsulation is formed in ...

TUNNELING NANOTUBE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

A tunneling nanotube field effect transistor includes: an insulating layer disposed on a substrate; a gate electrode disposed on the insulating layer; a source electrode and a drain electrode disposed on the insulating layer on respective adjacent sides of the gate electrode; and a carbon nanotube extending through the gate electrode, wherein the carbon nanotube is supported by the source electrode, the gate electrode, and the drain electrode, wherein the carbon nanotube includes a first portion adjacent to the source electrode and a second portion adjacent to the drain electrode, and wherein the source electrode and the gate electrode are spaced apart by an exposed section of the first portion, and the drain electrode and the gate electrode are spaced apart by an exposed section of the second portion. 1. A method of manufacturing a tunneling nanotube field effect transistor , comprising:forming an insulating layer on a substrate;forming a carbon nanotube above the insulating layer, wherein a portion of the carbon nanotube is supported and surrounded by a gate electrode;performing doping on the carbon nanotube such that a first portion of the carbon nanotube adjacent to the gate electrode has a first conductivity type and a second portion of the carbon nanotube adjacent to the gate electrode has a second conductivity type different from the first conductivity type; andforming a source electrode on the first portion and a drain electrode on the second portion, wherein the source electrode and the gate electrode are spaced apart by an exposed section of the first portion, and the drain electrode and the gate electrode are spaced apart by an exposed section of the second portion.2. The method according to claim 1 , wherein forming the carbon nanotube above the insulating layer further comprises:forming a porous silicon layer on the insulating layer;forming a photoresist layer having an opening on the porous silicon layer;applying a metal catalyst solution to the porous ...

METHOD FOR PRODUCING VAPOR DEPOSITION MASK, AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side. 1. A method for producing a vapor deposition mask that is formed by a resin mask having openings corresponding to a pattern to be produced by vapor deposition , comprising the step of:providing a resin layer;forming the resin mask by forming the openings corresponding to a pattern to be produced by vapor deposition in the resin layer by emitting a laser.2. The method of producing a vapor deposition mask according to claim 1 ,wherein a thickness of the resin mask is within a range not less than about 3 μm and less than about 10 μm.3. The method of producing a vapor deposition mask according to claim 1 ,wherein a sectional shape of the resin mask is a shape including broadening toward a vapor deposition source side.4. The method of producing a vapor deposition mask according to claim 1 ,wherein a thermal expansion coefficient of the resin mask is not more than about 16 ppm/° C. This application is a continuation of U.S. application Ser. No. 16/532,911, filed Aug. 6, 2019, which is a continuation of U.S. application Ser. No. 16/223,625, filed Dec. 18, 2018, now abandoned, which is a continuation of U.S. application Ser. No. ...

METHODS FOR TAILORING ELECTRODE WORK FUNCTION USING INTERFACIAL MODIFIERS FOR USE IN ORGANIC ELECTRONICS

The present invention is directed to methods for tailoring the work function of electrodes in organic electronics using interfacial modifiers comprising functionalized semiconducting polymers and/or small molecules. 1. A method of tailoring the work function of an electrode to a desired work function value for use in an organic photovoltaic device comprising the steps of:a. selecting a first functionalized semiconducting polymer (FSP) for the electrode based on known work function values obtained from a library of established work function values for electrode/FSP pairs;b. coating the electrode with a first solution containing the selected FSP and rinsing to form a first half bi-layer;c. measuring the work function of the first half bilayer to obtain a first work function value;d. comparing the first work function value to the desired work function value;{'sup': '−', 'e. coating the first half bilayer with PEDOT:PSS to form a first bilayer;'}f. measuring the work function of the first bilayer to obtain a first bilayer work function value;g. repeating steps a-f until the desired work function value is obtained.2. The method as in wherein the functionalized semiconducting polymer (FSP) is P3(CNP)HT.3. The method as in wherein the functionalized semiconducting polymer (FSP) is P3(TBP)HT.4. The method as in wherein the functionalized semiconducting polymer (FSP) is P3PHT.5. The method as in wherein the number of bilayers is at least two having at least two different FSPs.6. The method as in wherein the FSPs are selected from P3(CNP)HT claim 5 , P3(TBP)HT and P3PHT.7. The method as in wherein the FSP is changed with each repetition of steps a-c.8. The method as in wherein the electrode includes a combination of at least one small molecule and at least one FSP.9. The method as in wherein the at least one small molecule is selected from one of the following: N claim 8 ,N′-Bis(2-(trimethylammonium)ethylene)perylene-3 claim 8 ,4 claim 8 ,9 claim 8 ,10-tetracarboxydiimide ...

ORGANIC-INORGANIC HYBRID JUNCTION DEVICE USING REDOX REACTION AND ORGANIC PHOTOVOLTAIC CELL OF USING THE SAME

Provided are an organic-inorganic hybrid junction device in which organic and inorganic materials are connected by junction, and a depletion layer is formed at a junction interface, and an organic photovoltaic cell using the same. A basic metal oxide solution is applied to a top surface of a P-doped organic layer. The basic metal oxide solution has N-type characteristics. An oxidation-reduction reaction occurs in response to the application of the basic metal oxide solution at a junction interface of the organic layer, and the metal oxide layer is simultaneously gelated. A free charge is removed from a surface region of the P-doped organic layer by the oxidation-reduction reaction at the interface, which is converted into a depletion region. According to the introduction of the depletion region, P-N junction occurs, and thus the device has a diode characteristic in an electrical aspect. Also, an organic photovoltaic cell including the organic layer, the depletion layer and the metal oxide layer is fabricated. 121-. (canceled)22. A method for manufacturing an organic-inorganic hybrid junction device , comprising:forming an organic layer on a substrate, wherein the organic layer is doped with a P-type dopant;forming a metal oxide layer on the organic layer by gelation of a basic metal oxide solution, wherein the metal oxide layer is doped with an N-type dopant; andforming a depletion layer by dedoping the organic layer at an interface between the organic layer and the metal oxide layer in response to an oxidation-reduction (redox) reaction of the organic layer and the basic metal oxide solution.23. The method according to claim 22 , wherein the organic layer includes a polymer selected from the group consisting of polyaniline- claim 22 , polypyrrol- claim 22 , polyacethylene- claim 22 , poly(3 claim 22 ,4-ethylenedioxythiophene (PEDOT)- claim 22 , poly(phenylene-vinylene) (PPV)- claim 22 , poly(fluorine)- claim 22 , poly(para-phenylene) (PPP)- claim 22 , poly(alkyl- ...

METHOD FOR MANUFACTURING TRANSPARENT CONDUCTOR, TRANSPARENT CONDUCTOR AND DEVICE FOR MANUFACTURING THE SAME, AND DEVICE FOR MANUFACTURING TRANSPARENT CONDUCTOR PRECURSOR

According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film. 18.-. (canceled)9. A transparent conductor comprising:a graphene film;a silver nanowire layer on the graphene film, the silver nanowire layer comprising a plurality of silver nanowires and having an opening; anda transparent resin layer on the silver nanowire layer, the transparent resin layer being in contact with the graphene film through the opening of the silver nanowire layer,wherein a peak height of G band in a Raman spectrum of the graphene film is larger than that of D band.10. The transparent conductor according to claim 9 , wherein the graphene film protrudes into the transparent resin layer at a portion that is in contact with the transparent resin layer claim 9 , the graphene film having a recess having a depth equal to or less than half a diameter of the silver nanowire.11. The transparent conductor according to claim 9 , wherein a copper content in the graphene film measured by XPS is 1 atomic % or less.12. The transparent conductor according to claim 9 , wherein the graphene film comprises graphene in which a part of carbon atoms are substituted with nitrogen atoms.1314.-. (canceled) This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2014-051797, filed Mar. 14, 2014; the entire contents of which are incorporated herein by reference.Embodiments described herein relate generally to methods of manufacturing ...

OLED SUBSTRATE AND FABRICATION METHOD THEREOF

The present invention provides an OLED substrate and a fabrication method thereof. The OLED substrate fabrication method of the present invention forms pixel areas of which shapes are each a first pattern that is made up of a rectangle and two semicircles that are respectively connected to two short edges of the rectangle or a second pattern that is made up of a rectangle having four corners that are each a round corner so as to improve homogeneity and consistency of film formation through inkjet printing in the pixel areas thereby enhancing lighting homogeneity and performance stability of an OLED device. The OLED substrate of the present invention is made to have uniform thickness for inkjet-printed films so as to achieve uniform lighting and stable performance of an OLED device. 1. An organic light emitting display (OLED) substrate fabrication method , comprising the following steps:providing a backing plate and forming a plurality of anodes that are spaced from each other on the backing plate;forming a pixel definition layer on the plurality of anodes and the backing plate, such that the pixel definition layer surrounds and delimits a plurality of pixel areas on the plurality of anodes, respectively, and the plurality of pixel areas each have a shape that comprises a first pattern or a second pattern, wherein the first pattern is made up of a rectangle and two semicircles respectively connected to two short edges of the rectangle and the second pattern is made up of a rectangle having four corners each comprising a rounded corner;forming a plurality of hole injection layers in the plurality of pixel areas to be respectively located on the plurality of anodes;forming a plurality of hole transportation layers on the plurality of hole injection layers, respectively;forming a plurality of light emission layers on the plurality of hole transportation layers, respectively;forming a plurality of electron transportation layers on the plurality of light emission layers, ...

TRANSISTOR ACOUSTIC SENSOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME, ACOUSTIC SENSOR AND PORTABLE DEVICE

The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved. 1. A transistor acoustic sensor element , comprising a gate , a gate insulating layer , a first electrode , an active layer and a second electrode arranged on a base substrate , wherein the active layer has a nanowire three-dimensional mesh structure which can vibrate under the action of sound signals so that the output current of the transistor acoustic sensor element changes correspondingly.2. The transistor acoustic sensor element according to claim 1 , wherein the active layer is arranged between the first electrode and the second electrode claim 1 , and the active layer is made of a polymer organic semiconductor material.3. The transistor acoustic sensor element according to claim 2 , wherein the material of the active layer is selected from P3HT claim 2 , PDQT claim 2 , PDVT-10 claim 2 , PPhTQ claim 2 , P(DPP4T-co-BDT) claim 2 , P3OT claim 2 , BAS-PPE claim 2 , TA-PPE claim 2 , PQT-12 or PBIBDF-BT.4. The transistor acoustic sensor element according to claim 1 , wherein the active layer substantially has a thickness of about 50-500 nm.5. The transistor acoustic sensor element according to claim 1 , wherein the active layer comprises a single sub-film or a plurality of sub-films.6. The transistor acoustic sensor ...

Transparent Conducting Oxide As Top-Electrode In Perovskite Solar Cell By Non-Sputtering Process

Techniques for forming a transparent conducting oxide (TCO) top contact using a low temperature process are provided. In one aspect of the invention, a method of forming a TCO on a substrate is provided. The method includes the steps of: generating a source gas of the TCO using e-beam evaporation; generating atomic oxygen using RF plasma; and contacting the substrate with the TCO source gas and the atomic oxygen under conditions sufficient to form the TCO on the substrate. A photovoltaic device is also provided which includes a bottom cell; and a perovskite-based top cell on the kesterite-based bottom cell. The perovskite-based top cell includes a top electrode formed from a TCO.

PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING THE SAME, MANUFACTURE DEVICE AND PRODUCTION LINE FOR PHOTOVOLTAIC CELL

The present invention provides a photovoltaic cell and a method of manufacturing the same, a manufacture device and a production line for a photovoltaic cell. The method of manufacturing a photovoltaic cell includes steps of: forming an anode layer on a substrate; forming, by spin coating, a donor-acceptor polymer mixed film layer on the substrate; and forming a cathode layer on the substrate. During the formation of the donor-acceptor polymer mixed film layer on the substrate by spin coating, a DC electric field is applied to the donor-acceptor polymer mixed film layer. By using the method, orientations of the molecules in the polymer chain of the donor-acceptor polymer mixed film layer tend to be consistent with each other under the effect of the DC electrical field, so that a transmission rate of carriers during the photoelectric conversion is increased, thereby improving the efficiency and the stability of the photovoltaic cell. 1. A method of manufacturing a photovoltaic cell , comprising steps of:forming an anode layer on a substrate;forming, by spin coating, a donor-acceptor polymer mixed film layer on the substrate; andforming a cathode layer on the substrate,wherein, during the formation of the donor-acceptor polymer mixed film layer on the substrate by spin coating, a direct current electric field is applied to the donor-acceptor polymer mixed film layer, which is being formed by spin coating.2. The method according to claim 1 , wherein the direct current electric field has a direction perpendicular and directing to the substrate.3. The method according to claim 2 , wherein the step of applying claim 2 , during the formation of the donor-acceptor polymer mixed film layer on the substrate by spin coating claim 2 , a direct current electric field to the donor-acceptor polymer mixed film layer being spin coated includes:connecting a positive electrode of a direct current power supply to a metal conductive sheet, the metal conductive sheet being a positive ...

Devices, Structures, Materials and Methods for Vertical Light Emitting Transistors and Light Emitting Displays

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs. 1. A vertical light emitting transistor , comprising:a light emitting cell comprised of a light emitting layer formed of at least one light emitting material, the light emitting layer having first and second sides in conductive relation to a conductive drain electrode and a conductive source electrode;at least one capacitor comprised of a dielectric layer formed of at least one dielectric material, the at least one dielectric layer having first and second sides in conductive relation to one of either the conductive source or drain electrodes, and a conductive gate electrode; andat least one substrate in supportive relation with each of said drain and gate electrodes;wherein the drain and source electrodes are the cathode and anode of the light emitting cell; andwherein at least the electrode disposed between the light emitting layer and the dielectric layer is a conductive porous electrode has sufficient open portions to exhibit a surface coverage of no greater than 50%, such that the dielectric layer ...

MANUFACTURING FLEXIBLE ORGANIC ELECTRONIC DEVICES

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system. 144-. (canceled)45. A system for depositing a material onto a moving substrate web , comprising: a system for moving the web;a cylinder comprising at least one opening therein through which the material within an interior of the cylinder may pass to exit the interior of the cylinder at less than atmospheric pressure; anda control system to rotate the cylinder in a controlled manner so that the material passes through the at least one opening to be deposited upon the moving web in a determined pattern.46. The method of claim 45 , wherein the material is deposited at a pressure between 10 to 10torr.47. The method of claim 45 , wherein the material is deposited at a pressure between 10to 10torr.48. The method of claim 45 , wherein a source of the material is positioned within the cylinder.49. The method of claim 45 , wherein an axis of the cylinder is generally perpendicular to a direction of motion of the web.50. The method of claim 45 , wherein microelectronic systems are formed on the web.51. The method of claim 50 , wherein the material is an organic material.52. The method of claim 50 , wherein the material is a conductive material.53. The method of claim 52 , wherein the determined pattern comprises bus lines over a transparent conductor on the web.54. A substrate web having a determined pattern formed by the process of:delivering the material into an interior of at least one cylinder, the cylinder comprising at least one opening therein through which the material may pass to exit the interior ...

ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF

Disclosed are an organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display capable of minimizing resistance increase of a second electrode and improving light extraction efficiency at the same time by forming a separate reflector, and a manufacturing method thereof. 1. A manufacturing method of an organic light emitting diode display , comprising:forming an insulating layer on a substrate;forming a first electrode on the insulating layer;forming a pixel defining layer so as to be overlapped with an end portion of the first electrode;forming a reflector on the pixel defining layer;forming a spacer on the reflector;forming an organic emission layer through the upper portion of the spacer and the first electrode; andforming a second electrode on the organic emission layer.2. The manufacturing method of claim 1 , wherein in the forming of the pixel defining layer claim 1 , an inflection point is formed at a contact point between the pixel defining layer and the reflector.3. The manufacturing method of claim 1 , wherein the spacer is formed to extend to the upper portion of the pixel defining layer to cover the reflector.4. The manufacturing method of claim 3 , wherein the reflector is formed to be disposed between the pixel defining layer and the spacer.5. The manufacturing method of claim 3 , wherein an inflection point is formed at a contact point between the pixel defining layer and the spacer.6. The manufacturing method of claim 3 , wherein a distance between the contact point between the reflector and the pixel defining layer and the contact point between the spacer and the pixel defining layer is between about 0.5 and about 3 μm.71. The manufacturing method of claim 1 , wherein the pixel defining layer has an inclined angle θ of about 30° to 75° to the first electrode at a contact point with the first electrode.82. The manufacturing method of claim 3 , wherein the spacer has an inclined ...

Graphene laminate and preparation method therefor

Disclosed is a graphene laminate including a first graphene layer, containing an electron-donating functional group, and a second graphene layer, disposed on the first graphene layer and configured to include graphene, wherein the second graphene layer is n-doped with the first graphene layer. Thereby, graphene is doped with amino-group-modified graphene, thus preventing the transparency of graphene from decreasing, and the extent of doping of graphene can be adjusted, and the doping effect can last a long time even without any protective layer.

ORGANIC LIGHT-EMITTING COMPONENT AND METHOD FOR PRODUCING AN ORGANIC LIGHT-EMITTING COMPONENT

In various embodiments, an organic light-emitting organic is provided. The organic light-emitting component may include a first electrode layer, an organic functional layer structure over the first electrode layer, and a second electrode layer over the organic functional layer structure. The second electrode layer and the organic functional layer structure are divided into subregions which are arranged laterally next to one another, which are respectively at least partially separated from one another. A plurality of the subregions are electrically connected to at least two neighboring subregions by at least two corresponding connecting elements with are formed by the second electrode layer and the organic functional layer structure. 1. An organic light-emitting component , comprising:a first electrode layer,an organic functional layer structure over the first electrode layer, anda second electrode layer over the organic functional layer structure,wherein the second electrode layer and the organic functional layer structure are divided into subregions which are arranged laterally next to one another, which are respectively at least partially separated from one another,wherein a plurality of the subregions are electrically connected to at least two neighboring subregions by at least two corresponding connecting elements which are formed by the second electrode layer and the organic functional layer structure, andwherein current distributor elements are arranged over the first electrode layer and at least partially under the organic functional layer structure, and wherein the current distributor elements and the subregions are configured and arranged with respect to one another in such a way that separating regions, in which the subregions are separated from one another, are arranged vertically over the current distributor elements.2. The organic light-emitting component as claimed in claim 1 , wherein a plurality of the subregions are connected to at least three ...

METHOD FOR FABRICATING LARGE METAL NANOFIBER ELECTRODE ARRAY USING ALIGNED METAL NANOFIBER

Disclosed is a largescale nanofiber electrode array using aligned metal nanofiber, which includes preparing a metal precursor/organic polymer complex solution, forming an aligned metal/polymer complex nanofiber pattern with a continuously connected shape on a substrate to by injecting the solution with an electric field aided robotic nozzle printer and moving the substrate, and performing thermal treatment on the complex nanofiber pattern to form an aligned nanofiber metal pattern. Accordingly, the position and direction of the metal nanofiber pattern can be accurately controlled, and the metal nanofiber pattern can be aligned in a desired direction. 1. A method of fabricating a large-area metal nanofiber electrode array using aligned metal nanofiber , the method comprising:a step of preparing a metal precursor/organic polymer complex solution by mixing a metal precursor and an organic polymer with distilled water or an organic solvent;a step of forming an aligned metal precursor/organic polymer complex nanofiber pattern with a continuously connected shape on a substrate by injecting the metal precursor/organic polymer complex solution into a nozzle of an electric field aided robotic nozzle printer and applying an electric field thereto and, accordingly, moving the substrate when a solidified nanofiber with a continuously connected shape is charged while perpendicularly discharging the metal precursor/organic polymer complex solution toward the substrate when the metal precursor/organic polymer complex solution forms a Taylor cone at an end of the nozzle; anda step of forming an aligned metal nanofiber pattern composed of metal nanograins by pyrolyzing the organic polymer through thermal treatment of the aligned metal precursor/organic polymer complex nanofiber pattern and reducing the metal precursor to metal nanograins.2. The method according to claim 1 , wherein claim 1 , in the step of preparing the metal precursor/organic polymer complex solution claim 1 , the ...

DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, DISPLAY APPARATUS, AND MASK

A display substrate has a plurality of sub-pixel regions used to display images and a non-sub-pixel region surrounding the sub-pixel regions. The display substrate includes a light-emitting device layer. The light-emitting device layer includes a first electrode layer. The first electrode includes a plurality of first electrodes electrically connected to each other and at least one hollowed-out region among part of adjacent first electrodes. The at least one hollowed-out region is located in the non-sub-pixel region. 1. A display substrate , having a plurality of sub-pixel regions used to display images and a non-sub-pixel region surrounding the sub-pixel regions; whereinthe display substrate comprises a light-emitting device layer, the light-emitting device layer includes a first electrode layer; the first electrode layer includes a plurality of first electrodes electrically connected to each other and at least one hollowed-out region among part of adjacent first electrodes; and the at least one hollowed-out region is located in the non-sub-pixel region.2. The display substrate according to claim 1 , whereinthe light-emitting device layer further includes a second electrode layer stacked with the first electrode layer, and the second electrode layer includes a plurality of second electrodes spaced apart from each other; anda region among at least part of adjacent second electrodes overlaps with the at least one hollowed-out region.3. The display substrate according to claim 1 , wherein each odd-numbered row of sub-pixel regions includes first color sub-pixel regions and second color sub-pixel regions, each even-numbered row of sub-pixel regions includes third color sub-pixel regions, and first electrodes corresponding to the third color sub-pixel regions in each even-numbered row of the sub-pixel regions are arranged alternately with hollowed-out regions along a row direction; or,', 'each even-numbered row of sub-pixel regions includes the first color sub-pixel ...

MASK ASSEMBLY, AND APPARATUS AND METHOD FOR MANUFACTURING DISPLAY APPARATUS INCLUDING THE MASK ASSEMBLY

A mask assembly includes a mask frame, a mask on the mask frame and including at least one opening through which a deposition material passes, and a stick on the mask frame and extending over the opening, wherein the stick includes a stick body portion connected to the mask frame and extending over the opening, and a protrusion protruding from the stick body portion toward the opening. 1. A mask assembly , comprising:a mask frame;a mask on the mask frame and including at least one opening through which a deposition material can pass; and a stick body portion connected to the mask frame and extending over the opening; and', 'a protrusion protruding from the stick body portion toward the opening., 'a stick on the mask frame and extending over the opening, the stick including2. The mask assembly as claimed in claim 1 , wherein the stick body portion and the protrusion are separable from each other.3. The mask assembly as claimed in claim 1 , wherein the protrusion includes:a connection portion connected to the stick body portion; anda shielding portion connected to the connection portion and configured to shield the deposition material.4. The mask assembly as claimed in claim 1 , wherein an end of the protrusion is arranged farther from a source claim 1 , which is configured to spray the deposition material claim 1 , than one side of the mask that faces the source.5. The mask assembly as claimed in claim 1 , wherein the mask and at least a portion of the stick include different materials from each other.6. The mask assembly as claimed in claim 1 , wherein at least a portion of the stick is a non-magnetic material.7. The mask assembly as claimed in claim 1 , wherein a hole is in a portion of the stick body portion that corresponds to the protrusion.8. The mask assembly as claimed in claim 1 , wherein the mask frame claim 1 , the stick claim 1 , and the mask are sequentially stacked.9. An apparatus for manufacturing a display apparatus claim 1 , the apparatus comprising: ...

SYSTEMS AND METHODS FOR ORGANIC SEMICONDUCTOR DEVICES WITH SPUTTERED CONTACT LAYERS

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer. 1. A method for fabricating an organic semiconductor device that includes an organic semiconductor active layer deposited on one or more backside device layers , the method comprising:applying a buffering transport layer over the organic semiconductor active layer of the organic semiconductor device;opening a plurality of scribes that extend into the buffering transport layer, the organic semiconductor active layer and the one or more backside device layers; andsputter-depositing a conductive material layer onto the buffering transport layer and into the plurality of scribes, wherein the conductive material layer within the plurality of scribes electrically connects the conductive material layer deposited onto the buffering transport layer on a first side of each of the plurality of scribes with a back contact layer within the one or more backside device layers on a second side of each of the plurality of scribes.2. The method of claim 1 , wherein the organic semiconductor active layer comprises either an organic bulk heterojunction structure or a bilayer structure.3. The method of claim 1 , wherein applying the buffering transport layer comprises applying to the organic semiconductor active layer either a transparent or semi- ...