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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 5094. Отображено 100.
01-03-2012 дата публикации

Edge-emitting semiconductor laser

Номер: US20120051380A1
Автор: Marc Schillgalies, Stephan Lutgen, Uwe Strauss
Принадлежит: OSRAM Opto Semiconductors GmbH

The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body ( 10 ), which comprises a waveguide region ( 4 ), wherein the waveguide region ( 4 ) comprises a first waveguide layer ( 2 A), a second waveguide layer ( 2 B) and an active layer ( 3 ) arranged between the first waveguide layer ( 2 A) and the second waveguide layer ( 2 B) and serving for generating laser radiation ( 5 ), and the waveguide region ( 4 ) is arranged between a first cladding layer ( 1 A) and a second cladding layer ( 1 B) disposed downstream of the waveguide region ( 4 ) in the growth direction of the semiconductor body ( 10 ). The waveguide region ( 4 ) has a thickness d of 400 nm or less, and an emission angle of the laser radiation ( 5 ) emerging from the semiconductor body ( 10 ) in a direction parallel to the layer plane of the active layer ( 3 ) and the emission angle of the laser radiation ( 5 ) emerging from the semiconductor body ( 10 ) in a direction perpendicular to the layer plane of the active layer ( 3 ) differ from one another by less than a factor of 3.

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Номер записи: 1
19-04-2012 дата публикации

Multimode vertical-cavity surface-emitting laser arrays

Номер: US20120093189A1
Автор: David A. Fattal, Marco Fiorentino, Raymond G. Beausoleil
Принадлежит: Hewlett Packard Development Co LP

Various embodiments of the present invention are directed to monolithic VCSEL arrays where each VCSEL can be configured to lase at a different wavelength. In one embodiment, a monolithic surface-emitting laser array includes a reflective layer, a light-emitting layer ( 102 ), and a grating layer ( 112 ) configured with two or more non-periodic, sub-wavelength gratings. Each grating is configured to form a resonant cavity with the reflector, and each grating is configured with a grating pattern that shapes one or more internal cavity modes and shapes one or more external transverse modes emitted through the grating.

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Номер записи: 2
24-05-2012 дата публикации

Vertical cavity surface emitting laser with active carrier confinement

Номер: US20120128020A1
Автор: Philipp Henning Gerlach
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

It is an object of the present invention to improve the confinement of the carriers within a VCSEL. As a general concept of the invention, it is proposed to integrate a phototransistor layer structure into the layer stack of the VCSEL.

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Номер записи: 3
13-09-2012 дата публикации

Gan laser element

Номер: US20120230357A1
Автор: Shigetoshi Ito, Susumu Omi, Tomoki Ono, Toshiyuki Kawakami
Принадлежит: Sharp Corp

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

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Номер записи: 4
27-09-2012 дата публикации

Gain-clamped semiconductor optical amplifiers

Номер: US20120243075A1
Автор: M. Saif Islam, Nobuhiko Kobayashi, Philip J. Kuekes, Shih-Yuan Wang
Принадлежит: Individual

A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

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Номер записи: 5
10-01-2013 дата публикации

Method for producing semiconductor optical integrated device

Номер: US20130012002A1
Автор: Hirohiko Kobayashi, Kenji Hiratsuka, Kenji Koyama, Masaki Yanagisawa, Yoshihiro Yoneda
Принадлежит: Sumitomo Electric Industries Ltd

A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.

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Номер записи: 6
28-02-2013 дата публикации

Semiconductor Laser Device and a Method for Manufacturing a Semiconductor Laser Device

Номер: US20130051421A1
Автор: Silke Traut, Stephanie Saintenoy
Принадлежит: Individual

A semiconductor laser device formed on a semiconductor substrate, the device comprising: a passivation layer arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer deposited on the upper surface of the device by atomic layer deposition and an outer layer deposited on the inner layer, and comprising a material that is inert in the presence of water.

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Номер записи: 7
16-05-2013 дата публикации

Short light pulse generating device, terahertz wave generating device, camera, imaging device, and measuring device

Номер: US20130120584A1
Автор: Hitoshi Nakayama
Принадлежит: Seiko Epson Corp

A short light pulse generating device includes a light pulse generating part, a first pulse compressing part, a second pulse compressing part, and an amplifying part. The light pulse generating part is configured to generate light pulses, the light pulse generating part being a super luminescent diode. The first pulse compressing part is configured to perform pulse compression based on saturable absorption on the light pulses generated by the light pulse generating part. The second pulse compressing part is configured to perform pulse compression based on group velocity dispersion compensation on the light pulses that underwent the pulse compression by the first pulse compressing part. The amplifying part is provided between the first pulse compressing part and the second pulse compressing part, and configured to amplify the light pulses that underwent the pulse compression by the first pulse compressing part.

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Номер записи: 8
16-05-2013 дата публикации

Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits

Номер: US20130122617A1
Автор: James A. Lott, Nikolai Ledentsov, Vitaly Shchukin
Принадлежит: CONNECTOR OPTICS LLC

Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.

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Номер записи: 9
11-07-2013 дата публикации

Three-terminal vertical cavity surface emitting laser (vcsel) and a method for operating a three-terminal vcsel

Номер: US20130177036A1
Автор: Chung-Yi Su, Ramana M.V. Murty, Rashit Nabiev
Принадлежит: Avago Technologies General IP Singapore Pte Ltd

A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when its in the logical HIGH state.

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Номер записи: 10
05-09-2013 дата публикации

Methods for producing optoelectronic semiconductor components, and optoelectronic semiconductor lasers

Номер: US20130230067A1
Автор: Christoph Eichler, Sönke TAUTZ
Принадлежит: OSRAM Opto Semiconductors GmbH

A method for producing an optoelectronic semiconductor component includes: epitaxially growing a semiconductor layer sequence including an active layer on a growth substrate, shaping a front facet at the semiconductor layer sequence and the growth substrate, coating a part of the front facet with a light blocking layer for radiation generated in the finished semiconductor component, wherein the light blocking layer is produced by a directional coating method and the light blocking layer is structured during coating by shading by the growth substrate and/or by at least one dummy bar arranged at and/or alongside the growth substrate.

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Номер записи: 11
19-09-2013 дата публикации

Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus

Номер: US20130243023A1
Автор: Takashi Kondo
Принадлежит: Fuji Xerox Co Ltd

A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector.

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Номер записи: 12
24-10-2013 дата публикации

Addressable illuminator with eye-safety circuitry

Номер: US20130278151A1
Автор: Kevin L. Lear
Принадлежит: TRILUMINA CORPORATION

An addressable illuminator is disclosed consisting of multiple optical sources used in combination with an electrical circuit so that different combinations of the optical sources can be energized without exceeding eye-safety limits. Operation of multiple optical sources may be proximate, which is eye-safe, regardless of the number of or which ones of the optical sources are energized and regardless of the position of observers. An illuminator with multiple optical sources remains eye-safe when there are single-point electrical failures, such as short circuits, in the driving circuit. Monitoring or a feedback loop for the output power is not required or necessary to control the distance of an observer in order to be eye-safe.

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Номер записи: 13
31-10-2013 дата публикации

Method for forming a buried metal layer structure

Номер: US20130285067A1
Автор: Jean-Marc Bethoux, Pascal Guenard
Принадлежит: Soitec SA

The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy.

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Номер записи: 14
21-11-2013 дата публикации

Semiconductor light emitting device and light emitting apparatus

Номер: US20130308667A1
Автор: Hiroyuki HAGINO, Katsuya Samonji
Принадлежит: Panasonic Corp

A semiconductor light emitting device includes a nitride semiconductor layer, an insulating film, a first electrode, and a second electrode which are provided on a substrate. The nitride semiconductor layer includes a second cladding layer having a stripe-shaped ridge. The insulating film is provided on a portion of the second cladding layer including the at least one ridge. The first electrode is provided to contact the upper surface of the ridge. The second electrode is provided to contact the upper surface of the first electrode, the upper surface of the insulating film, and a portion of the second cladding layer exposed from the insulating film.

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Номер записи: 15
06-03-2014 дата публикации

Laser Light Source

Номер: US20140064311A1
Автор: Alfred Lell, Christoph Eichler, Dimitri Dini
Принадлежит: OSRAM Opto Semiconductors GmbH

A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.

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Номер записи: 16
06-01-2022 дата публикации

RESONANT OPTICAL CAVITY LIGHT EMITTING DEVICE

Номер: US20220005973A1
Автор: Atanackovic Petar
Принадлежит: Silanna UV Technologies Pte Ltd

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The reflector may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·λ/n. K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength. 1. A resonant optical cavity light emitting device comprising:a substrate that is optically transparent to a target emission deep ultraviolet wavelength (target wavelength);a first spacer region directly coupled to the substrate, the first spacer region being non-absorbing to the target wavelength, wherein at least a portion of the first spacer region comprises a first electrical polarity;a light emitting region on the first spacer region, the light emitting region being configured to emit the target wavelength;a second spacer region on the light emitting region, the second spacer region being non-absorbing to the target wavelength, wherein at least a portion of the second spacer region comprises a second electrical polarity opposite of the first electrical polarity; anda reflector coupled to the second spacer region, the reflector comprising a distributed Bragg reflector (DBR) that is reflective of the target wavelength, and wherein the reflector comprises aluminum-oxy-nitride, aluminum oxide, or magnesium fluoride;wherein the light emitting region is positioned at a separation distance from the reflector; andwherein the resonant optical cavity light emitting device has an optical cavity between the reflector and a first ...

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Номер записи: 17
06-01-2022 дата публикации

Self-Injection Locking Using Resonator On Silicon Based Chip

Номер: US20220006260A1
Автор: Antman Yair, Gaeta Alexander L., Ji Xingchen, Lipson Michal
Принадлежит:

Disclosed are devices, methods, and systems for controlling output of a laser. An example device can comprise a first portion comprising a gain element and a second portion comprising a silicon material. The second portion can comprise a waveguide configured to receive light from the gain element, an optical resonator configured to at least partially reflect light back to the gain element via the waveguide, and a first tuning element configured to tune a resonant frequency of the optical resonator. 1. A device , comprising:a first portion comprising a gain element; and a waveguide configured to receive light from the gain element;', 'an optical resonator configured to at least partially reflect light back to the gain element via the waveguide; and', 'a first tuning element configured to tune a resonant frequency of the optical resonator., 'a second portion comprising a silicon material, wherein the second portion comprises2. The device of claim 1 , wherein the optical resonator is tuned by the first tuning element to cause one or more of: (1) output of a single longitudinal mode by the gain element claim 1 , (2) output of a single transversal mode by the gain element claim 1 , (3) narrowing of a linewidth of a lasing mode of the gain element claim 1 , or (4) tuning a frequency of the gain element.3. The device of claim 1 , wherein the optical resonator comprises a ring resonator.4. The device of claim 1 , wherein the gain element comprises one or more of a Fabry-Perot laser claim 1 , a multimodal laser claim 1 , or a multimodal Fabry-Perot laser.5. The device of claim 1 , wherein one or more of the waveguide or the optical resonator comprises a dielectric material disposed on the silicon material claim 1 , and wherein the dielectric material comprises silicon nitride.6. The device of claim 1 , wherein the second portion comprises one or more of a chip claim 1 , an integrated circuit claim 1 , or a monolithically integrated portion.7. The device of claim 1 , wherein ...

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Номер записи: 18
06-01-2022 дата публикации

Semiconductor device and fabrication method

Номер: US20220006264A1
Автор: Alwyn Seeds, Huiyun Liu, Jiang Wu, Mengya LIAO, Mingchu TANG, Siming Chen
Принадлежит: UCL BUSINESS LTD

A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.

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Номер записи: 19
07-01-2016 дата публикации

SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS

Номер: US20160006214A1
Автор: Kondo Takashi, TAKEDA Kazutaka
Принадлежит: FUJI XEROX CO., LTD.

A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector on the substrate including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; an active region on or above the first reflector; a second semiconductor multilayer reflector on or above the active region including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; and a cavity extending region formed between the first reflector and the active region or between the second reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, including a conductive semiconductor material, and including an optical loss causing layer at at least one node of a standing wave of a selected longitudinal mode. 1a substrate;a first semiconductor multilayer reflector formed on the substrate, and including laminated pairs of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index;an active region formed on or above the first semiconductor multilayer reflector;a second semiconductor multilayer reflector formed on or above the active region, and including laminated pairs of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index; anda cavity extending region formed between the first semiconductor multilayer reflector and the active region or between the second semiconductor multilayer reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, and including a conductive semiconductor material,wherein the cavity extending region includes a first optical loss causing ...

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Номер записи: 20
04-01-2018 дата публикации

QUANTUM CASCADE LASER

Номер: US20180006434A1
Автор: YABUHARA Hidehiko
Принадлежит: KABUSHIKI KAISHA TOSHIBA

An active layer of a quantum cascade laser includes an active layer includes a plurality of emission regions and a plurality of injection regions. Each emission region includes an injection barrier layer, and an light-emitting quantum well layer that has at least two well layers, and that emits infrared light by undergoing an intersubband transition. Each injection region includes an extraction barrier layer, and a relaxation quantum well layer that creates an energy level for relaxing the energy of carriers from the each emission region. One of adjacent two well layers in the light-emitting quantum well layer of the each emission region on the side of the extraction barrier layer is deeper than a second well layer on the side of the injection barrier layer. The each emission region and the injection region are alternately stacked. 1. A quantum cascade laser comprising an active layer that includes:a plurality of emission regions, each emission region including an injection barrier layer, and an light-emitting quantum well layer that has at least two well layers, and that emits infrared light by undergoing an intersubband transition; anda plurality of injection regions, each injection region including an extraction barrier layer, and a relaxation quantum well layer that creates an energy level for relaxing the energy of carriers from the each emission region,one of adjacent two well layers in the light-emitting quantum well layer of the each emission region on the side of the extraction barrier layer being deeper than a second well layer on the side of the injection barrier layer,the each emission region and the each injection region being alternately stacked.2. The laser according to claim 1 , wherein the well layers in the light-emitting quantum well layer of the each emission region become deeper toward the extraction barrier layer.3. The laser according to claim 2 , further comprising a substrate on which an emission region and an injection region are ...

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Номер записи: 21
07-01-2021 дата публикации

Semiconductor laser

Номер: US20210006033A1
Автор: Alexander Tonkikh, Alvaro Gomez-Iglesias, Bruno Jentzsch, Stefan Illek
Принадлежит: OSRAM OLED GmbH

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

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Номер записи: 22
07-01-2021 дата публикации

LIGHT EMISSION DEVICE COMPRISING AT LEAST ONE VCSEL AND A SPREAD LENS

Номер: US20210006041A1
Автор: SCIANCALEPORE Corrado
Принадлежит: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

A light-emitting device includes a vertical-cavity surface-emitting laser, the resonant cavity of which is transverse multimode supporting transverse modes having rotational symmetry of order two about a main optical axis, and an index-contrast grating including a plurality of pads. The pads include: a central pad, a plurality of peripheral pads, which are periodically arranged along one or more lines that are concentric with respect to the central pad, and which are arranged so that the grating has, with respect to the main optical axis, a rotational symmetry of uneven order higher than or equal to three. 112-. (canceled)13. A device for emitting a light beam , comprising:a vertical-cavity surface-emitting laser comprising a resonant cavity that extends along a main optical axis and that is bounded by two mirrors a top mirror of which defines an emission surface,the resonant cavity being configured to support a plurality of transverse optical modes, including a fundamental transverse mode and transverse modes of higher order having a rotational symmetry of order two about the main optical axis;an index-contrast grating forming a diffusion lens, said grating being arranged on the emission surface and comprising a plurality of pads that are separate from one another and that are made of at least one material of a first refractive index, said pads being encircled by a medium of a second refractive index different from the first index, said pads including:a central pad, which is centered on the main optical axis, anda plurality of peripheral pads, which are periodically arranged along one or more lines that are concentric with respect to the central pad, and which are arranged so that the grating has, with respect to the main optical axis, a rotational symmetry of uneven order higher than or equal to three.14. The device as claimed in claim 13 , wherein claim 13 , for a concentric line said to be of rank 1 arranged facing the central pad claim 13 , a radial period is ...

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Номер записи: 23
07-01-2021 дата публикации

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE

Номер: US20210006042A1
Автор: ISHIBASHI Akihiko, Ohno Hiroshi, SUMI Tomoaki, TAKINO Junichi
Принадлежит:

A group-III nitride semiconductor laser device includes a GaN substrate, and an active layer provided on the GaN substrate, in which the GaN substrate has an oxygen concentration of 5×10cmor more, and an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength. 1. A group-III nitride semiconductor laser device , comprising:a GaN substrate; andan active layer provided on the GaN substrate,{'sup': 19', '−3, 'wherein the GaN substrate has an oxygen concentration of 5×10cmor more, and'}an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength.2. The group-III nitride semiconductor laser device of claim 1 ,{'sup': 2', '−3, 'wherein the GaN substrate has an oxygen concentration of 1×10cmor more.'}3. The group-III nitride semiconductor laser device of claim 1 ,{'sup': '−1', 'wherein the GaN substrate has a light absorption coefficient of 10 cmor more.'}4. The group-III nitride semiconductor laser device of claim 1 ,wherein the GaN substrate has an n-type electrical conductivity. The present disclosure relates to a group-III nitride semiconductor laser device.Group-III nitride crystals such as GaN are expected to be applied to next-generation optical devices such as a high-power light emitting diode (LED) for illumination, a laser display, and a laser diode (LD) for a laser processing machine, new-generation electronic devices such as a high-power transistor mounted on an electric vehicle (EV) and a plug-in hybrid vehicle (PHV), or the like. In order to improve performance of the optical and electronic devices using the group-III nitride crystals, it is desirable that a substrate as a base material is constituted with a high-quality group-III nitride single crystal ...

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Номер записи: 24
12-01-2017 дата публикации

AlGaInP-BASED SEMICONDUCTOR LASER

Номер: US20170012410A1
Автор: Haruki Fukai, Masato Hagimoto, Satoshi Kawanaka, Shinji Sasaki, Tsutomu KIYOSUMI
Принадлежит: Ushio Opto Semiconductors Inc

An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (Al x Ga 1-x ) 0.5 In 0.5 P, a composition of the n-type cladding layer is expressed as (Al xn Ga 1-xn ) 0.5 In 0.5 P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (Al xp Ga 1-xp ) 0.5 In 0.5 P (0.9<xp≦1), and xn and xp satisfy a relationship of xn<xp.

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Номер записи: 25
11-01-2018 дата публикации

MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL

Номер: US20180013265A1
Автор: Hsu Po Shan, McLaurin Melvin, Raring James W., Sztein Alexander
Принадлежит:

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch. 132.-. (canceled)33. A method for manufacturing a laser diode device , the method comprising:providing a gallium and nitrogen containing substrate having a surface region;forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, a p-type gallium and nitrogen containing region overlying the active region; and an interface region overlying the p-type gallium and nitrogen containing region;forming a plurality of dies by patterning the epitaxial material, each pair of adjacent dies being characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device;bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies;subjecting the release material of the bonded dies to an energy source to release the bonded dies from the gallium and nitrogen containing substrate and transfer ...

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Номер записи: 26
09-01-2020 дата публикации

Semiconductor Device and Method

Номер: US20200014169A1
Автор: An-Jhih Su, Chen-Hua Yu, Chia-Nan Yuan, Der-Chyang Yeh, Ming Shih Yeh, Shih-Guo Shen, Yu-Hung Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

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Номер записи: 27
09-01-2020 дата публикации

ARRAY OF LIGHT SOURCES COMPRISING MULTIPLE VCSELs

Номер: US20200014174A1
Автор: Engelen Rob Jacques Paul, Pfeffer Nicola Bettina, van der Sijde Arjen
Принадлежит: LUMILEDS LLC

The invention describes an array of light sources comprising multiple VCSELs arranged laterally to each other on top of a substrate, wherein each VCSEL comprises a light emitting area surrounded by an electrode structure which does not emit light, wherein a shielding layer is applied on top of at least the electrode structure only covering a surface (of the electrode structure facing towards an average light emitting direction of the VECSELs, the shielding layer is an opaque layer and being adapted to optically match the array in a switched-off state to an outer surface of a housing of a device, where the array of light sources is to be installed. The invention further describes the device comprising such an array and a method for manufacturing an array of light sources. 1. An array of light sources comprising; wherein each of the multiple VCSELs comprises a light emitting area surrounded by an electrode structure which does not emit light,', 'wherein a shielding layer is applied on top of at least the electrode structure only covering a surface of the electrode structure facing towards an average light emitting direction of the multiple VCSELs, and, 'multiple vertical cavity surface emitting laser (VCSELs) arranged laterally to each other on top of a substrate,'}the shielding layer an opaque layer and being adapted to optically match the array in a switched-off state, where no light is emitted, to a demanded appearance, preferably to an outer surface of a housing of a device where the array of light sources is to be installed.2. The array of light sources in accordance with claim 1 , wherein all visible surfaces of the electrode structure are coated by the shielding layer.3. The array of light sources in accordance with claim 1 , wherein the array of light sources comprise non-active areas between neighbored VCSELs of the multiple VCSELs claim 1 , where the shielding layer also covers the non-active areas.4. The array of light sources in accordance with claim 3 , ...

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Номер записи: 28
21-01-2016 дата публикации

SEMICONDUCTOR LASER ELEMENT

Номер: US20160020581A1
Автор: Hirose Kazuyoshi, Kurosaka Yoshitaka, Noda Susumu, Sugiyama Takahiro, Watanabe Akiyoshi
Принадлежит:

A semiconductor laser element is realized with high beam quality (index M<1). A diffraction grating of a diffraction grating layer extends along a principal surface and is provided on a p-side surface of the diffraction grating layer ; the refractive index of the diffraction grating layer periodically varies in directions extending along the principal surface , in the diffraction grating ; the diffraction grating has a plurality of holes ; the plurality of holes are provided in the p-side surface and arranged in translational symmetry along a square lattice R; the plurality of holes each have the same size and shape; each hole corresponds to a lattice point of the diffraction grating and is of a triangular prism shape; a shape of a bottom face of the hole is an approximate right triangle. 1. A semiconductor laser element comprising a semiconductor laminate ,wherein the semiconductor laminate comprisesa support substrate, a first cladding layer, an active layer, a diffraction grating layer, and a second cladding layer,wherein the first cladding layer, the active layer, the diffraction grating layer, and the second cladding layer are provided on a principal surface of the support substrate,wherein the active layer and the diffraction grating layer are provided between the first cladding layer and the second cladding layer,wherein the active layer generates light,wherein the second cladding layer has a conductivity type different from a conductivity type of the first cladding layer,wherein the diffraction grating layer has a diffraction grating,wherein the diffraction grating has a two-dimensional photonic crystal structure of square lattice arrangement,wherein the two-dimensional photonic crystal structure has a plurality of holes and extends along the principal surface,wherein the plurality of holes have an identical shape and are arranged along a square lattice of the diffraction grating,wherein the hole corresponds to a lattice point of the diffraction grating, ...

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Номер записи: 29
17-01-2019 дата публикации

LOW RESISTANCE VERTICAL CAVITY LIGHT SOURCE WITH PNPN BLOCKING

Номер: US20190020176A1
Автор: DEPPE DENNIS G.
Принадлежит:

A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source. 1. A semiconductor vertical resonant cavity light source , comprising:an upper p-type mirror (upper mirror) and a lower n-type mirror (low mirror);an active region for light generation between said upper mirror and said lower mirror;said light source including an inner mode confinement region and an outer current blocking region;said outer current blocking region comprising a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror,a conducting channel comprising acceptor impurities in said inner mode confinement region of said common epitaxial layer;wherein said outer current blocking region provides a PNPN current blocking region comprising said upper mirror, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, a second impurity doped region comprising acceptor impurities between said first ...

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Номер записи: 30
22-01-2015 дата публикации

Surface-emitting laser module, optical scanner device, and image forming apparatus

Номер: US20150023381A1
Автор: Kazuhiko Adachi, Kazuhiro Harasaka, Satoru Sugawara, Shunichi Sato, Toshihiro Ishii, Yoshihiro Ohba
Принадлежит: Ricoh Co Ltd

A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

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Номер записи: 31
25-01-2018 дата публикации

LASER COMPONENT

Номер: US20180026421A1
Автор: Enzmann Roland, Marfeld Jan, Schmid Hubert, Seidenfaden Jan, Tautz Soenke
Принадлежит:

A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip. 1. A laser component comprising:a housing;a laser chip arranged in the housing; anda conversion element for radiation conversion arranged in the housing, wherein the conversion element is irradiatable with laser radiation of the laser chip.2. The laser component according to claim 1 , wherein the conversion element comprises a phosphor layer.3. The laser component according to claim 2 , wherein the phosphor layer comprises a thermally conductive material with one phosphor or a plurality of phosphors embedded therein.4. The laser component according to claim 2 , wherein the conversion element comprises a thermally conductive layer that dissipates heat from the phosphor layer.5. The laser component according to claim 4 , wherein the thermally conductive layer is formed from one selected from the group consisting of metal claim 4 , ceramic claim 4 , diamond claim 4 , sapphire claim 4 , and matrix material with embedded carbon nanotubes.6. The laser component according to claim 4 , wherein the phosphor layer is partly concealed by the thermally conductive layer claim 4 , and the phosphor layer is irradiatable with laser radiation of the laser chip in a region in which the phosphor layer is not concealed by the thermally conductive layer.7. The laser component according to claim 4 , wherein the thermally ...

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Номер записи: 32
23-01-2020 дата публикации

Semiconductor device and fabrication method

Номер: US20200028317A1
Автор: Alwyn Seeds, Huiyun Liu, Jiang Wu, Mengya LIAO, Mingchu TANG, Siming Chen, Suguo Huo
Принадлежит: UCL BUSINESS LTD

Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.

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Номер записи: 33
05-02-2015 дата публикации

Semiconductor light emitting element

Номер: US20150034901A1
Автор: Akiyoshi Watanabe, Kazuyoshi Hirose, Susumu Noda, Takahiro Sugiyama, Yoshitaka Kurosaka
Принадлежит: Hamamatsu Photonics KK, KYOTO UNIVERSITY

A semiconductor light emitting element includes an electrode 8 , an active layer 3 , a photonic crystal layer 4 , and an electrode 9 . Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8 , the active layer 3 , the photonic crystal layer 4 , and the electrode 9 are stacked along the X-axis. The X-axis passes through a central part 8 a 2 of the opening 8 a when viewed from the axis line direction of the X-axis. The end 9 e 1 of the electrode 9 and the end 8 e 1 of the opening 8 a substantially coincide with each other when viewed from the axis line direction of the X-axis.

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Номер записи: 34
01-02-2018 дата публикации

TOOLING FOR COUPLING MULTIPLE ELECTRONIC CHIPS

Номер: US20180033754A1
Автор: Dugas Roger, Trezza John
Принадлежит:

A method for use with multiple chips, each respectively having a bonding surface including electrical contacts and a surface on a side opposite the bonding surface involves bringing a hardenable material located on a body into contact with the multiple chips, hardening the hardenable material so as to constrain at least a portion of each of the multiple chips, moving the multiple chips from a first location to a second location, applying a force to the body such that the hardened, hardenable material will uniformly transfer a vertical force, applied to the body, to the chips so as to bring, under pressure, a bonding surface of each individual chip into contact with a bonding surface of an element to which the individual chips will be bonded, at the second location, without causing damage to the individual chips, element, or bonding surface. 1. A method comprising:constraining a portion of multiple chips adjacent a hardened material such that the hardened material and the multiple chips behave as a rigid body;transferring a force from the hardened material on the rigid body to the multiple chips to bring, under pressure, a bonding surface of each individual chip into contact with a bonding surface of an element, without causing damage to the multiple chips or the bonding surface of the element; andremoving the hardened material from contact with the multiple chips.2. The method of claim 1 , further comprising moving the multiple chips constrained by the hardened material from a first location to a second location.3. The method of claim 1 , further comprising bonding each of the multiple chips to the element.4. The method of claim 1 , further comprising removing the rigid body using at least one of a chemical process claim 1 , a mechanical process claim 1 , or a chemical-mechanical process.5. The method of claim 1 , further comprising removing at least a portion of the hardened material through at least one of a chemical process claim 1 , a mechanical process claim 1 ...

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Номер записи: 35
01-02-2018 дата публикации

SINGLE LONGITUDINAL MODE LASER DIODE SYSTEM

Номер: US20180034239A1
Автор: Ban Vladimir Sinisa, Dolgy Sergei, Volodin Boris Leonidovich
Принадлежит: NECSEL INTELLECTUAL PROPERTY, INC.

A semiconductor laser diode system may include a single longitudinal mode laser diode and a feedback system that monitors and controls the emission characteristics of the laser diode. The laser diode may include a gain medium and an optical feedback device. The feedback system may include a wavelength discriminator, an optical detector, a microprocessor, and a laser controller. Such a semiconductor laser diode system may be used to produce laser light having coherence length, wavelength precision, and wavelength stability that is equivalent to that of a gas laser. Accordingly, such a semiconductor laser diode system may be used in place of a traditional gas laser. 1. A semiconductor laser diode system , comprising:a semiconductor laser source having a laser cavity;an optical feedback device, wherein the optical feedback device is a three-dimensional optical element having a Bragg grating recorded therein, and wherein the Bragg grating causes a narrowband portion of radiation emitted from the laser source to be fed back into the laser cavity, the optical feedback device being configured to cause the laser diode to achieve single longitudinal mode at a desired wavelength; anda feedback system that monitors emission characteristics of the laser diode, the feedback system comprising a processor that is configured to adjust one or more control characteristics of the laser diode to cause the laser diode to achieve and maintain a single longitudinal mode condition using only output power characteristics of the laser diode.2. The semiconductor laser diode system of claim 1 , wherein the Bragg grating causes the narrowband portion of the radiation emitted from the laser source to be fed back into the laser cavity as seed light at the desired wavelength.3. The semiconductor laser diode system of claim 1 , wherein the Bragg grating causes the narrowband portion of the radiation emitted from the laser source to be reflected back into the laser cavity as seed light at the ...

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Номер записи: 36
01-02-2018 дата публикации

MONOLITHIC DIODE LASER ARRANGEMENT AND METHOD FOR PRODUCING THE MONOLITHIC DIODE LASER

Номер: US20180034243A1
Автор: BIESENBACH JENS, FRIEDMANN PATRICK, GILLY JUERGEN, HILZENSAUER SASCHA, KELEMEN MARC
Принадлежит:

A monolithic diode laser arrangement contains a plurality of individual emitters which are arranged adjacent to one another on a common supporting substrate and which in each case have contact windows for electrical contact which are arranged on the respective individual emitters on a front face opposite the supporting substrate. A method for producing such a diode laser arrangement and a laser device having such a diode laser arrangement are further described. 1. A monolithic diode laser configuration , comprising:a common carrier substrate; and an epitaxial substrate; and', 'a multilayered epitaxial structure applied on said epitaxial substrate such that said epitaxial substrate is not completely covered by said multilayered epitaxial structure, said multilayered epitaxial structure having at least one p-doped cladding layer and at least one n-doped cladding layer, wherein said multilayered epitaxial structure having a p-type contact window for electrically contacting said p-doped cladding layer and disposed on a front side of said multilayered epitaxial structure and wherein said epitaxial substrate having an n-type contact window for electrically contacting said n-doped cladding layer and disposed on a front side on said epitaxial substrate in a region in which said epitaxial substrate is not covered by said multilayered epitaxial structure., 'a plurality of individual emitters disposed alongside one another on said common carrier substrate and each having contact windows for electrical contacting, said contact windows disposed at a front side of said individual emitters opposite said common carrier substrate, each of said individual emitters containing2. The monolithic diode laser configuration according to claim 1 , further comprising a bond plane claim 1 , said individual emitters are connected to said common carrier substrate indirectly via said bond plane disposed between said individual emitters and said common carrier substrate.3. The monolithic diode ...

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Номер записи: 37
31-01-2019 дата публикации

METHOD OF PRODUCING A PLURALITY OF LASER DIODES AND LASER DIODE

Номер: US20190036294A1
Автор: Gerhard Sven
Принадлежит:

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a compound, wherein the laser bars each include a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, and structuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed. 1. A method of producing a plurality of laser diodes comprising:providing a plurality of laser bars in a compound, wherein the laser bars each comprise a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, andstructuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed.2. The method according to claim 1 , wherein the laser diode elements are each formed on a first main surface with a contact region and a connection layer claim 1 , and the contact region is applied on a side of the connection layer remote from the semiconductor layer sequence claim 1 , and at least the contact regions or connection layers of two laser diode elements directly adjacent at a longitudinal separation line are ...

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Номер записи: 38
04-02-2021 дата публикации

Laser Chip Design

Номер: US20210036486A1
Автор: Cheng Ning, Effenberger Frank, LIU Xiang
Принадлежит:

A laser chip comprises a first lateral portion comprising a first metal stripe, a first lateral connector coupled to the first metal stripe, a second metal stripe, and a second lateral connector coupled to the second metal stripe; a second lateral portion coupled to the first lateral portion and comprising a first bonding pad coupled to the first lateral connector, and a second bonding pad coupled to the second lateral connector. A method of DFB laser chip fabrication, the method comprises depositing a first portion of a passivation layer; depositing a second metal stripe; depositing a second portion of the passivation layer; and depositing a first metal stripe. 1. A laser chip , comprising:a substrate including a top surface; a first lateral connector coupled to the first conductive trace at a first end and extending substantially laterally on the top surface from the first conductive trace; and', 'a first bonding pad formed on the top surface and on a second end of the first lateral connector, the first bonding pad located a first distance from the first conductive trace; and, 'a first conductive trace extending substantially longitudinally on the top surface of the substrate, the first conductive trace comprising a second lateral connector coupled to the second conductive trace at a first end and extending substantially laterally from the second conductive trace, the second lateral connector having a second end extending to the top surface of the substrate; and', 'a second bonding pad formed on a second end of the second lateral connector on the top surface of the substrate, the second bonding pad located the first distance from the first conductive trace;, 'a second conductive trace extending substantially longitudinally within the substrate, the second conductive trace being substantially parallel to the first conductive trace, and at least a portion of the second conductive trace is beneath the top surface, the second conductive trace comprisingthe first ...

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Номер записи: 39
08-02-2018 дата публикации

Mode Control in Vertical-Cavity Surface-Emitting Lasers

Номер: US20180041010A1
Автор: Benjamin Kesler, John Michael Dallesasse, Thomas O&#39;Brien, JR.
Принадлежит: University of Illinois

Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.

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Номер записи: 40
15-02-2018 дата публикации

METHOD OF PRODUCING AN ELECTRONIC COMPONENT

Номер: US20180048122A1
Автор: Hartauer Stefan, Mueller Jens, Rumbolz Christian, Stephan Christoph, Walter Robert
Принадлежит:

A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region. 117.-. (canceled)18. A method of producing an electronic component comprising:providing a surface comprising a first region and a second region adjoining the first region;arranging a sacrificial layer above the first region of the surface;arranging a passivation layer above the sacrificial layer and the second region of the surface;creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region; andremoving the sacrificial layer and the portions of the passivation layer that are arranged above the first region.19. The method according to claim 18 , wherein creating the opening in the passivation layer comprises:arranging a photoresist layer above the passivation layer;creating an opening in the photoresist layer above the first region of the surface;removing a part of the passivation layer that is arranged below the opening in the photoresist layer; andremoving the photoresist.20. The method according to claim 18 , wherein claim 18 , before arranging the sacrificial layer claim 18 , an electrically conductive layer is arranged above the first region of the surface or above the first region and the second region of the surface.21. The method according to claim 18 , wherein claim 18 , before arranging the ...

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Номер записи: 41
03-03-2022 дата публикации

Semiconductor laser element

Номер: US20220069547A1
Автор: Yoshio Nishimoto, Yuji Ishida, Yuki HIROKAWA
Принадлежит: ROHM CO LTD

A semiconductor laser element includes a semiconductor laminated structure that has a substrate, an n type cladding layer disposed at a front surface side of the substrate, an active layer disposed at an opposite side of the n type cladding layer to the substrate, and p type cladding layers disposed at an opposite side of the active layer to the n type cladding layer. The active layer includes a quantum well layer having a tensile strain for generating TM mode oscillation and the n type cladding layer and the p type cladding layers are respectively constituted of AlGaAs layers.

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Номер записи: 42
22-02-2018 дата публикации

ULTRA-LOW NOISE, HIGHLY STABLE SINGLE-MODE OPERATION, HIGH POWER, BRAGG GRATING BASED SEMICONDUCTOR LASER

Номер: US20180054040A1
Автор: MORTON Paul A.
Принадлежит:

A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection. 1. A laser comprising:a semiconductor gain chip;an external cavity; anda first thermally conductive baseplate;wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet, allowing light generated from the gain chip to be coupled with a first end of the external cavity;and a second part of the external cavity comprises a Bragg grating forming a second end of the laser cavity;wherein the external cavity comprising the Bragg grating is supported by the first thermally conductive baseplate;wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip;wherein the physical length of the Bragg grating is greater than 20 mm and occupies at least 75% of the physical length of the external cavity; andwherein the Bragg grating is apodized to control the sidemodes of the grating reflection.2. The laser of claim 1 , wherein the external cavity comprises an optical fiber.3. The laser of claim 2 , wherein the Bragg grating is a fiber Bragg grating (FBG) within the optical fiber.4. The laser of claim 1 , wherein the external cavity comprises a waveguide.5. The laser of claim ...

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Номер записи: 43
25-02-2021 дата публикации

NARROW BEAM DIVERGENCE SEMICONDUCTOR SOURCES

Номер: US20210057883A1
Автор: Ghosh Chuni, Seurin Jean-Francois, Van Leeuwen Robert
Принадлежит:

Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced. 1. A narrow beam divergence semiconductor source operable to generate a beam having a substantially narrow beam divergence , an emission wavelength , and a substantially uniform beam intensity , the narrow beam divergence semiconductor source comprising:an optical resonant cavity including a high reflection mirror having first and second sides, an extended length mirror having first and second sides, and an active region;the high reflection mirror and the extended length mirror being disposed on distal of the active region such that the first side of the high reflection mirror is coupled to a first side of the active region and the first side of the extended length mirror is coupled to a second side of the active region opposing the first; anda plurality of electrical contacts operable to direct electric current to the active region.2. The narrow beam divergence semiconductor source of claim 1 , wherein the extended length mirror and the high reflection mirror are operable to suppress one or more longitudinal and/or transverse modes such that one or more longitudinal and/or transverse modes lase.3. The narrow beam divergence semiconductor source of claim 2 , wherein only one longitudinal mode lases.4. The narrow beam divergence semiconductor source of claim 1 , wherein the extended length mirror has:an effective penetration depth extending a plurality of emission wavelength distances from the first side of the extended length mirror; anda relative refractive index difference.5. The narrow beam divergence semiconductor source of claim 4 , wherein the high reflection mirror has:an ...

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Номер записи: 44
25-02-2021 дата публикации

STRUCTURED LIGHT PROJECTION SYSTEM INCLUDING NARROW BEAM DIVERGENCE SEMICONDUCTOR SOURCES

Номер: US20210057888A1
Автор: Ghosh Chuni, Seurin Jean-Francois, Van Leeuwen Robert
Принадлежит:

Structured light projection system include narrow beam divergence semiconductor sources. The structured light projector system includes an array of narrow beam divergence semiconductor sources, and a projection lens operable to generate an image of the array of narrow beam divergence semiconductor source. Each narrow beam divergence semiconductor source can include an extended length mirror that helps suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced. 1. A structured light projector comprising:an array of narrow beam divergence semiconductor sources, each narrow beam divergence semiconductor source within the array being operable to generate a beam with a substantially narrow beam divergence and substantially uniform beam intensity;a plurality of electrical contacts operable to direct electric current to the array of narrow beam divergence semiconductor sources; anda projection lens operable to generate an image of the array of narrow beam divergence semiconductor source.2. The structured light projector of claim 1 , wherein each narrow beam divergence semiconductor source within the array of sources includes:an optical resonant cavity including a high reflection mirror having first and second sides, an extended length mirror having first and second sides, and an active region;the high reflection mirror and the extended length mirror being disposed on distal sides of the active region such that the first side of the high reflection mirror is coupled to a first side of the active region, and the first side of the extended length mirror is coupled to a second side of the active region opposing the first;the beam being having an emission wavelength; andthe plurality of electrical contacts being operable to direct electric current to the active region.3. The structured light projector of claim 2 , wherein the extended length mirror and the high reflection mirror within ...

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Номер записи: 45
13-02-2020 дата публикации

Method of manufacturing light emitting device

Номер: US20200052462A1
Автор: Shingo Tanisaka
Принадлежит: Nichia Corp

A method of manufacturing a light emitting device comprising: providing an element-structure wafer having a first substrate and a laser element structure on the first substrate, the laser element structure having ridges on a side opposite to the first substrate and raising layers respectively formed above the ridges; bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer; removing at least a portion of the first substrate to obtain a thinned bonded wafer; singulating the thinned bonded wafer to obtain a laser element with the second substrate; mounting the laser element with the second substrate on a heat dissipating member such that a laser element side of the laser element with the second substrate faces the heat dissipating member; and removing the second substrate from the laser element.

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Номер записи: 46
01-03-2018 дата публикации

LASER PACKAGE HAVING MULTIPLE EMITTERS CONFIGURED ON A SUPPORT MEMBER

Номер: US20180058640A1
Автор: GOUTAIN ERIC, HUANG HUA, Raring James W., RUDY PAUL
Принадлежит:

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate. 144.-. (canceled)45. A lighting system comprising:an apparatus comprising a white lighting device, a multi-colored lighting device, a flat panel device, a beam projector device, or a display device; a free space with a non-guided characteristic capable of transmitting the laser beam from each of the 1 to N laser diode devices;', 'an optical device configured to receive the laser beam from each of the 1 to N laser diode devices and to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration;', 'an output power characterizing the output beam, the output power being at least 0.5 W, at least 5 W, at least 50 W, at least 100 W, or at least 200 W;', 'a phosphor material optically coupled to the output beam;', 'a support member configured to transport thermal energy from the 1 to N laser diode devices to a heat sink;', 'a free space optics included in the optical device and configured to create one or more free space optical beams;', 'a thermal path from the 1 to N laser diode devices to the heat sink characterized by a thermal impedance; and', 'whereupon the output beam is characterized by an optical output power degradation of less than 20% in 500 hours when the 1 to N laser diode devices are operated at the output power and with a substantially constant input current at a base temperature of about 25 degrees Celsius., '1 to N laser diode devices configured to provide light for the apparatus, wherein N ranges from 2 to 50, at least one of the 1 to N laser diode devices comprises gallium and nitrogen, and each of the 1 to N laser diode devices is configured to ...

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Номер записи: 47
01-03-2018 дата публикации

SURFACE LIGHT EMITTING SEMICONDUCTOR LASER ELEMENT

Номер: US20180059344A1
Автор: Kuromizu Yuichi, Narui Hironobu, TANAKA Yoshiyuki, Watanabe Yoshiaki, Yamauchi Yoshinori
Принадлежит:

A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided. 114-. (canceled)15. A surface light-emitting semiconductor laser element comprising:a substrate;a lower reflector having a first-type semiconductor multi-layer structure disposed on the substrate;an active layer disposed on the lower reflector;a current confinement layer including a current injection region and an oxidation region disposed on the active layer;an upper reflector having a second-type semiconductor multi-layer structure disposed on the current confinement layer;a multi-layer structure disposed on the upper reflector, the multi-layer structure comprises a first layer defining a first opening, a second layer disposed on the first layer and defining a second opening, and a third layer disposed on the second layer and defining a third opening, wherein a step-wise shape is formed by the first layer, the second layer, and the third layer in a cross-section view; anda first electrode disposed on the multi-layer structure.16. The surface light-emitting semiconductor laser element of claim 15 ,wherein the first opening defined by the first layer has a first diameter in the cross- ...

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Номер записи: 48
10-03-2022 дата публикации

METHOD, SYSTEM AND APPARATUS FOR DIFFERENTIAL CURRENT INJECTION

Номер: US20220077657A1
Автор: Chen Zhigang, Kanskar Manoj
Принадлежит: nLIGHT, Inc.

A laser diode, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet, and a first contact layer electrically coupled to the waveguide and configured to vary an amount of current injected into the waveguide in the longitudinal direction so as to inject more current near the HR facet than at the PR facet. 1. A laser diode , comprising:a transverse waveguide including an active layer between an n-type semiconductor layer on an n-side of the transverse waveguide and a p-type semiconductor layer on a p-side of the transverse waveguide wherein the transverse waveguide is bounded on the n-side by a lower index n-cladding layer and on the p-side by a lower index p-cladding layer;a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet; anda first contact layer configured to vary an amount of current injected into the cavity in the longitudinal direction so as to inject more current at the first end than at the second end.2. The laser diode of claim 1 , wherein the first contact layer is disposed on an n-side of the transverse waveguide.3. The laser diode of claim 1 , wherein the first contact layer is disposed on p-side of the transverse waveguide.4. The laser diode of claim 1 , wherein the first contact layer comprises a substantially uniform thickness.5. The laser diode of claim 1 , wherein the first contact layer comprises a material ...

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Номер записи: 49
21-02-2019 дата публикации

DIODE LASER PACKAGES WITH FLARED LASER OSCILLATOR WAVEGUIDES

Номер: US20190058305A1
Автор: Hemenway David Martin, Kanskar Manoj
Принадлежит: nLIGHT, Inc.

A high brightness diode laser package includes a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions, a plurality of optical components situated to receive the laser beams from the plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship, and an optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package. 1. A high brightness diode laser package , comprising:a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions;a plurality of optical components situated to receive the laser beams from said plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship; andan optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package.2. The package of wherein said plurality of flared laser oscillator waveguides includes a first set of three or more of said flared laser oscillator waveguides arranged on a first stepped surface portion of said stepped surface at successive heights thereof such that a first set of beams is emitted parallel to each other and said first stepped surface portion in a first stepped configuration in a first emission direction;wherein said plurality of optical components includes a first set of optical components associated with said first set of three or more flared laser oscillator waveguides, said first set of optical components including fast-axis collimation optics and slow-axis collimation optics for collimating the respective fast and slow axes of the first set of beams and beam-turning optics coupled to each first set beam so as to provide each first set beam in a first set turn direction such that the first stepped configuration of beams becomes a first stacked ...

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Номер записи: 50
21-02-2019 дата публикации

Vertical cavity surface emitting laser

Номер: US20190058307A1
Автор: Philipp Henning Gerlach, Roger King
Принадлежит: Koninklijke Philips NV

The disclosure relates to a Vertical Cavity Surface Emitting Laser ( 100 ) comprising a first electrical contact ( 105 ), a substrate ( 110 ), a first Distributed Bragg Reflector ( 115 ), an active layer ( 120 ), a second Distributed Bragg Reflector ( 130 ) and a second electrical contact ( 135 ). The Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers ( 125 ) arranged below or above the active layer ( 120 ), wherein each of the current aperture layers ( 125 ) comprises one Al y Ga (1-y) As-layer, wherein a first current aperture layer ( 125 a ) of the at least two current aperture layers ( 125 ) is arranged nearer to the active layer ( 120 ) as a second current aperture layer (125 b ) of the at least two current aperture layers ( 125 ), wherein the first current aperture layer ( 125 a ) comprises a first current aperture ( 122 a ) with a bigger size as a second current aperture ( 122 b ) of the second current aperture layer ( 125 b ). The disclosure also relates to a method of manufacturing such a VCSEL ( 100 ).

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Номер записи: 51
03-03-2016 дата публикации

SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20160064902A1
Автор: MUGINO Yoichi, NISHIOKA Yoshito, NOMA Tsuguki
Принадлежит: ROHM CO., LTD.

A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer. 1. A semiconductor laser device comprising:an n-type clad layer;a first p-type clad layer;a ridge stripe including a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer;an n-side guide layer and a p-side guide layer which are interposed between the n-type clad layer and the first p-type clad layer;an active layer interposed between the n-side guide layer and the p-side guide layer; anda current-blocking layer formed on side surfaces of the ridge stripe,wherein a first ridge width of a surface of the second p-type clad layer existing on the same side as the first p-type clad layers is greater than or equal to 3.0 μm and less than or equal to 4.5 μm, and a second ridge width of a surface of the second p-type clad layer existing at the opposite side from the first p-type clad layer is greater than or equal to 2.0 μm,{'sub': x1', '(1-x1)', '0.51', '0.49, 'wherein the n-type clad layer, the first p-type clad layer and the second p-type clad layer are formed of a (AlGa)InP layer that has a composition where x1>0.7, and'}{'sub': x2', '(1-x2), 'wherein the n-side guide layer and the p-side guide layer is ...

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Номер записи: 52
02-03-2017 дата публикации

LIGHT EMITTING SEMICONDUCTOR DEVICES WITH GETTER LAYER

Номер: US20170063031A1
Автор: ENGELHARDT ANDREAS PETER, KOLB JOHANNA SOPHIE, Moench Holger, SCHEMMANN MARCEL FRANZ CHRISTIAN, Weichmann Ulrich
Принадлежит: KONINKLIJKE PHILIPS N.V.

The invention describes a light emitting semiconductor device () comprising a substrate (), a light emitting layer structure () and an AlGaAs getter layer () for reducing an impurity in the light emitting layer structure (), the light emitting layer structure () comprising an active layer () and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure () comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (). The AlGaAs getter layer () enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure () which may affect the lifetime of the light emitting semiconductor device (). The growth conditions are chosen out of the group Arsenic partial pressure, Oxygen partial pressure, deposition temperature, total deposition pressure and deposition rate of Aluminum. The invention further relates to a corresponding method of manufacturing such a light emitting semiconductor device (). 1. A light emitting semiconductor device comprising a substrate , a light emitting layer structure and an AlGaAs getter layer for reducing an impurity in the light emitting layer structure , the light emitting layer structure comprising an active layer and layers of varying Aluminum content , wherein a first concentration of the impurity within the AlGaAs getter layer is at least 50% higher than a second concentration of the impurity in the layers of the light emitting layer structure comprising Aluminum , wherein the AlGaAs getter layer comprises a sublayer in which an Aluminum content varies with less than 0.5%/nm between a first Aluminum content and a second Aluminum content.2. The light emitting semiconductor device according to claim 1 , wherein the impurity incorporated in the AlGaAs ...

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Номер записи: 53
04-03-2021 дата публикации

Semiconductor laser

Номер: US20210066886A1
Автор: Hideto Iki, Shinya Satou
Принадлежит: Sony Semiconductor Solutions Corp

A semiconductor laser includes a semiconductor layer including end faces and at least one of the end faces is configured as a light emission end face. The semiconductor layer includes a waveguide and a light window structure region. The waveguide has a first width and is extended between the end faces. The light window structure region includes an opening having a second width greater than the first width arranged along the waveguide and is formed continuously or intermittently from one to another of the end faces.

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Номер записи: 54
17-03-2022 дата публикации

Broadband Electro-Absorption Optical Modulator Using On-Chip RF Input Signal Termination

Номер: US20220082874A1
Автор: Andrei Kaikkonen, David Adams, Nicolae Chitica, Robert LEWÉN
Принадлежит: II VI Delaware Inc

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

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Номер записи: 55
10-03-2016 дата публикации

MODE-CONTROLLED LASER SYSTEM

Номер: US20160072256A1
Автор: Fattal David A., Fiorentino Marco, Sorin Wayne Victor, Tan Michael Renne Ty
Принадлежит:

A mode-controlled laser system includes an active region to generate optical energy in response to an electric signal. The system also includes a mirror to resonate the optical energy in an optical cavity. The system also includes a HCG mode control reflector arranged in the optical cavity to control the resonated optical energy into a substantially non-Gaussian intensity profile. The resonated optical energy can be emitted as an optical signal having the substantially non-Gaussian intensity profile. 1. A mode-controlled laser system comprising:an active region to generate optical energy in response to an electric signal;a mirror to resonate the optical energy in an optical cavity; anda high-contrast grating (HCG) mode control reflector arranged in the optical cavity to control the resonated optical energy into a substantially non-Gaussian intensity profile, such that the resonated optical energy is emitted as an optical signal having the substantially non-Gaussian intensity profile.2. The system of claim 1 , wherein the substantially planar HCG mode control reflector comprises a plurality of resonant structures that are defined by a gradient pattern across a surface of the HCG mode control reflector.3. The system of claim 2 , wherein the plurality of resonant structures are one of sub-wavelength in dimension or fabricated from a first material and are substantially surrounded by a second material claim 2 , wherein a difference between an index-of-refraction of the first material and an index-of-refraction of the second material is greater than or equal to one.4. The system of claim 2 , wherein the gradient pattern is defined as the plurality of resonant structures having variable dimensions defined by a gradient claim 2 , or the gradient pattern is defined as the plurality of resonant structures having approximately equal dimensions and populating the substantially planar HCG lens with a density that is defined by the gradient.5. The system of claim 2 , wherein the ...

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Номер записи: 56
10-03-2016 дата публикации

Semiconductor laser element, methods of manufacturing the same and semiconductor laser device

Номер: US20160072257A1
Автор: Susumu Harada, Yasuhiro Kawata
Принадлежит: Nichia Corp

A method of manufacturing a plurality of semiconductor laser elements having; preparing the semiconductor wafer; forming grooves that extend along second lines on a first main surface side of the semiconductor wafer, and forming a first texture pattern along second lines on a bottom surface of the grooves, the second lines being parallel to a cavity length direction; forming a second texture pattern along the second lines by covering at least part of the first texture pattern with a protective film; and splitting the semiconductor wafer along first lines, the first lines being parallel to a cavity width direction, and splitting along the second lines using a second main surface, which is an opposite side of the first main surface, of the semiconductor wafer as an origin.

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Номер записи: 57
08-03-2018 дата публикации

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер: US20180069375A1
Автор: Arakida Takahiro, Koda Rintaro, MASUI YUJI, Oki Tomoyuki, Yamauchi Yoshinori
Принадлежит:

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting device comprising:a light-emitting structure, at least an upper portion of the light-emitting structure has a columnar configuration;a surrounding structure surrounding the light-emitting structure;at least two connecting structures, each of the connecting structures being connected to the light-emitting structure and the surrounding structure, at least two gaps are disposed between the light-emitting structure and the surrounding structure, and each of the gaps are extending along a side surface of the columnar configuration of the light emitting structure;an upper electrode; anda compound-semiconductor surface consisting of compound semiconductor material; a light-emitting-structure active region having an active-region compositional layer configuration;', 'a light-emitting-structure first region disposed above a substrate of the light-emitting device and below the light-emitting-structure active region, the light-emitting structure first region having a first-region compositional layer configuration;', a first portion of the light-emitting-structure second region having a second ...

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Номер записи: 58
28-02-2019 дата публикации

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME

Номер: US20190067907A1
Автор: DE ZOYSA Menaka, Noda Susumu, TANAKA Yoshinori
Принадлежит:

A two-dimensional photonic crystal surface emitting laser has, in a plate-shaped base body, a two-dimensional photonic crystal layer in which modified refractive index region pairs are periodically arranged and an active layer provided on one side of the base body, each of the modified refractive index region pairs including a first modified refractive index region and a second modified refractive index region having refractive indexes different from a refractive index of the base body, wherein an area of a planar shape of the first modified refractive index region is larger than or equal to an area of a planar shape of the second modified refractive index region, and a thickness of the first modified refractive index region is smaller than a thickness of the second modified refractive index region. 1. A two-dimensional photonic crystal surface emitting laser having ,in a plate-shaped base body, a two-dimensional photonic crystal in which modified refractive index region pairs are periodically arranged and an active layer provided on one side of the base body, each of the modified refractive index region pair comprising a first modified refractive index region and a second modified refractive index region having refractive indexes different from a refractive index of the base body,wherein an area of a planar shape of the first modified refractive index region is larger than or equal to an area of a planar shape of the second modified refractive index region, andwherein a thickness of the first modified refractive index region is smaller than a thickness of the second modified refractive index region.2. The two-dimensional photonic crystal surface emitting laser according to claim 1 ,wherein the modified refractive index region pairs are arranged in a square lattice pattern having a period length “a” in an x direction parallel to the base body and a period length “a” in a y direction parallel to the base body and perpendicular to the x direction, andwherein a center ...

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Номер записи: 59
07-03-2019 дата публикации

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер: US20190074662A1
Автор: Arakida Takahiro, Koda Rintaro, MASUI YUJI, Oki Tomoyuki, Yamauchi Yoshinori
Принадлежит:

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting element comprising:a light-emitting structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the light-emitting structure, an upper surface of the light-emitting structure being a first portion of a semiconductor surface consisting of a compound semiconductor material, and at least an upper portion of the light-emitting structure has a columnar configuration;a surrounding structure disposed so as to surround the light-emitting structure,wherein the surrounding structure includes the same layer structure as a portion of the light-emitting structure in which the insulation region is provided, and an upper surface of the surrounding structure being a second portion of the semiconductor surface;a plurality of connecting ...

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Номер записи: 60
05-03-2020 дата публикации

Light emitter and projector

Номер: US20200076160A1
Автор: Takafumi Noda, Yoji Kitano
Принадлежит: Seiko Epson Corp

A light emitter includes a substrate, a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer, and a third semiconductor layer provided between the substrate and the first semiconductor layer and having the second conductivity type, in which the first semiconductor layer is provided between the third semiconductor layer and the light emitting layer, and the third semiconductor layer has a protruding/recessed structure.

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Номер записи: 61
05-03-2020 дата публикации

Techniques for vertical cavity surface emitting laser oxidation

Номер: US20200076162A1
Автор: Chen Yu Chen, Jhih-Bin CHEN, Ming Chyi Liu
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer while leaving a central region of the optically active layer un-oxidized. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.

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Номер записи: 62
05-03-2020 дата публикации

SEMICONDUCTOR LASERS AND PROCESSES FOR THE PLANARIZATION OF SEMICONDUCTOR LASERS

Номер: US20200076164A1
Автор: BOWKER Jason Daniel, DOW Ali Badar Alamin, GREEN Malcolm R.
Принадлежит:

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide. 1. A laser structure , comprising:a substrate;an active region arranged on the substrate;a waveguide arranged on the active region, the waveguide including a first surface and a second surface that join to form a first angle relative to the active region; anda material deposited on the first surface and the second surface of the waveguide.2. The laser structure of claim 1 , wherein the first angle is less than ninety degrees.3. The laser structure of claim 1 , wherein the waveguide further includes a third surface and a fourth surface that join to form a second angle relative to the active region claim 1 , and the material is deposited on the third surface and the fourth surface.4. The laser structure of claim 3 , wherein the second angle is less than ninety degrees.5. The laser structure of claim 1 , wherein the material is one of MgO claim 1 , MgF claim 1 , SiO claim 1 , or SiN.6. The laser structure of claim 1 , wherein the material has a dielectric constant below 10 in a frequency range up to 50 GHz.7. The laser structure of claim 1 , wherein the material is non-conducting.8. The laser structure of claim 1 , wherein the waveguide includes a fifth surface arranged between the first surface and the third surface claim 1 , and the laser structure further comprises:a first contact arranged on the fifth surface; anda second contact arranged on the substrate,wherein the first contact is configured to bias the laser structure by delivering electrical current to the laser structure.9. The laser structure of claim 1 , further comprising at least one facet.10. The laser structure of claim 9 , wherein the at least one facet is ...

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Номер записи: 63
12-06-2014 дата публикации

Semiconductor laser element

Номер: US20140161145A1
Автор: Takashi Miyoshi
Принадлежит: Nichia Corp

A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer.

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Номер записи: 64
18-03-2021 дата публикации

SURFACE-EMITTING SEMICONDUCTOR LASER AND SENSING MODULE

Номер: US20210083454A1
Автор: FURUSHIMA YUJI, MASUI YUJI, NAKATA HIDEHIKO
Принадлежит:

A surface-emitting semiconductor laser includes a first emission region that outputs first light, and a second emission region that is provided separately from the first emission region, includes a phase shift section, and outputs second light. A far field pattern of the first light and a far field pattern of the second light are different from each other. 1. A surface-emitting semiconductor laser comprising:a first emission region that outputs first light; anda second emission region that is provided separately from the first emission region, includes a phase shift section, and outputs second light,a far field pattern of the first light and a far field pattern of the second light being different from each other.2. The surface-emitting semiconductor laser according to claim 1 , wherein the first emission region and the second emission region each include a first light reflection layer claim 1 , a semiconductor layer claim 1 , and a second light reflection layer in the stated order.3. The surface-emitting semiconductor laser according to claim 2 , wherein reflectance on a side of the second light reflection layer differs between the phase shift section of the second emission region and another portion of the second emission region.4. The surface-emitting semiconductor laser according to claim 2 , wherein the phase shift section is provided in a middle portion of the second emission region.5. The surface-emitting semiconductor laser according to claim 2 , wherein reflectance of the phase shift section on a side of the second light reflection layer is lower than reflectance of another portion of the second emission region on the side of the second light reflection layer.6. The surface-emitting semiconductor laser according to claim 5 , whereinthe second emission region further includes a dielectric film stacked on the second light reflection layer,the dielectric film of the phase shift section has an optical film thickness of an odd multiple of one-fourth of a ...

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Номер записи: 65
18-03-2021 дата публикации

Vertical-cavity surface-emitting laser for near-field illumination of an eye

Номер: US20210083455A1
Автор: Andrew John Ouderkirk, Christopher Yuan Ting Liao, Gregory Olegovic Andreev, Karol Constantine Hatzilias, Paul Armen TCHERTCHIAN, Robin Sharma
Принадлежит: Facebook Technologies LLC

A vertical-cavity surface-emitting laser (VCSEL) includes a semiconductor substrate, a first reflector, a second reflector, a first electrical contact, a second electrical contact, and a through-hole via. The first reflector is disposed on a first side of the semiconductor substrate and the second reflector is disposed between the first reflector and an emission side of the VCSEL. The first and second electrical contacts are disposed on a second side of the semiconductor substrate, opposite the first side, for mounting the VCSEL to a transparent substrate. The through-hole via electrically connects the second electrical contact to the second reflector.

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Номер записи: 66
18-03-2021 дата публикации

Photonic circuit with hybrid iii-v on silicon active section with inverted silicon taper

Номер: US20210083456A1
Автор: Antonin GALLET, Théo Verolet
Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

A photonic circuit with a hybrid III-V on silicon or silicon-germanium active section, that comprises an amplifying medium with a III-V heterostructure ( 1 , QW, 2 ) and an optical wave guide. The wave guide comprises a coupling section ( 31 ) facing a central portion of the amplifying medium, a propagation section ( 34, 35 ) and a modal transition section ( 32, 33 ) arranged between the coupling section and the propagation section. In the modal transition section, the optical wave guide widens progressively from the propagation section towards the coupling section.

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Номер записи: 67
24-03-2016 дата публикации

ACTIVE REGION CONTAINING NANODOTS (ALSO REFERRED TO AS "QUANTUM DOTS") IN MOTHER CRYSTAL FORMED OF ZINC BLENDE-TYPE (ALSO REFERRED TO AS "CUBIC CRYSTAL-TYPE") AlyInxGal-y-xN CRYSTAL(Y . 0, X>0) GROWN ON Si SUBSTRATE, AND LIGHTEMITTING DEVICE USING THE SAME (LED AND LD)

Номер: US20160087153A1
Автор: HIRAI Muneyuki, NISHIMURA Suzuka, Terashima Kazutaka
Принадлежит:

A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blende-type BP layer formed on an Si substrate, an AlInGaN (y≧0, x>0) crystal as a mother crystal maintaining the zinc blende-type crystal structure and In dots having an In concentration higher than that of the AlInGaN (y≧0, x>0) crystal as the mother crystal. 1. A light emitting device , comprising:an Si substrate;a buffer layer formed on the Si substrate, the buffer layer containing a BP crystal;an n-type GaN-based crystal formed on the buffer layer containing the BP crystal; and{'sub': y', 'x', '1-y-x', 'y', 'x', '1-y-x', 'y', 'x', '1-y-x', 'y', 'x', '1-y-x', 'y', 'x', '1-y-x, 'an active region containing a zinc blende-type AlInGaN (y≧0, x>0) mother crystal formed on the n-type GaN-based crystal, and AlInGaN (y≧0, x>0) nanodots formed in the zinc blende-type AlInGaN (y≧0, x>0) mother crystal, the AlInGaN (y≧0, x>0) nanodots having an In concentration higher than that of the zinc blende-type AlInGaN (y≧0, x>0) mother crystal.'}2. The light emitting device according to claim 1 , wherein the n-type GaN-based crystal contains silicon incorporated thereto as an impurity.3. The light emitting device according to claim 2 , wherein the silicon is contained in the n-type GaN-based crystal at a concentration of 5×10/cmor higher and 5×10/cmor lower.4. The light emitting device according to claim 1 , wherein the Si substrate is a crystal substrate obtained as a result of being inclined at an angle in the range of 5 degrees or greater and 10 degrees or less from a (100) plane toward a (110) plane.5. The light emitting device according to claim 1 , wherein the Si substrate is a crystal substrate obtained as a result of being inclined at an angle in the range of 5 degrees or greater and 10 degrees or less from a (100) plane toward a (110) plane and being inclined at an angle in the range of 5 degrees or greater and 10 degrees or ...

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Номер записи: 68
31-03-2022 дата публикации

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Номер: US20220102935A1
Автор: Chen Siming, HUO Suguo, LIAO Mengya, LIU Huiyun, SEEDS Alwyn, TANG Mingchu, Wu Jiang
Принадлежит:

Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth. 1. A semiconductor device comprising:a silicon substrate;a germanium layer;a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; andat least one layer containing III-V compound quantum dots,wherein one or more facets are formed using focused ion beam etching such that an angle between a plane of the facet is normal to a plane of growth.2. A semiconductor device comprising:a silicon substrate;a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon;one or more InGaAs/GaAs strained layer superlattices; andat least one layer containing III-V compound quantum dots,wherein one or more facets are formed using focused ion beam etching such that an angle between a plane of the facet is normal to a plane of growth.3. The device of claim 1 , wherein ions of the focused ion beam include positive ions of He claim 1 , Ne claim 1 , and Ga.4. The device of claim 1 , wherein probe current is less or equal to 500 pA.5. The device of claim 1 , wherein step size is less or equal to 100 nm.6. The device of claim 1 , wherein dwell time is less or equal to 1 ms.7. The device of claim 1 , wherein the angle between the plane of the facet and the normal in the growth plane to an axis of a waveguide forming part of the device claim 1 , which is a facet angle claim 1 , is chosen to create cavity mirrors with different angles so that a facet reflectivity can be controlled in a reproducible and high yield way to create diverse semiconductor devices on silicon.8. The device of claim 7 , wherein the facet angle is a value ...

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Номер записи: 69
05-05-2022 дата публикации

SEMICONDUCTOR LASER DIODE

Номер: US20220140566A1
Автор: Reill Wolfgang
Принадлежит:

A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.

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Номер записи: 70
21-03-2019 дата публикации

OPTOELECTRONIC LIGHTING DEVICE, CARRIER FOR AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC LIGHTING SYSTEM

Номер: US20190089125A1
Автор: Eichler Christoph, Gerhard Sven
Принадлежит:

An optoelectronic lighting device includes an optoelectronic semiconductor chip including a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, the semiconductor layer sequence includes an active zone that generates electromagnetic radiation, and a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside. 130.-. (canceled)31. An optoelectronic lighting device , comprising:an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side,wherein a semiconductor layer sequence is formed between the top side and the underside,the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation, anda barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside.32. The optoelectronic lighting device according to claim 31 , wherein the barrier comprises one or a plurality of walls such that at least one at least partly laterally closed trough that receives the flowing bonding material is formed by the one or the plurality of walls and the one of the top side and the underside.33. The optoelectronic lighting device according to claim 32 , wherein two troughs are formed claim 32 , in each case claim 32 , an electrical contact for electrically contacting the semiconductor chip is arranged within the two troughs claim 32 , and the two troughs are separated from one another by one or a plurality of closed walls to prevent formation of a shunt through the flowing bonding material between the two electrical contacts.34. The optoelectronic lighting device according to claim 31 , wherein the barrier is formed at least partly by the semiconductor layer sequence.35. The optoelectronic lighting device according to claim 31 , wherein the ...

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Номер записи: 71
21-03-2019 дата публикации

RECONFIGURABLE EMITTER ARRAY

Номер: US20190089131A1
Автор: YUEN Albert
Принадлежит:

An emitter array may comprise a plurality of vertical-emitting devices. The plurality of vertical-emitting devices may be in a two-dimensional pattern of vertical-emitting devices. The emitter array may further comprise a plurality of electrical contacts on a surface of the emitter array. Each of the plurality of electrical contacts may be co-located with and electrically connected to a corresponding vertical-emitting device of the plurality of vertical-emitting devices. The plurality of electrical contacts may provide mechanical support over the plurality of vertical-emitting devices. The plurality of electrical contacts may extend to approximately a same height. A subset of the plurality of vertical-emitting devices may be powered via a corresponding subset of the plurality of electrical contacts. 1. A vertical cavity surface emitting laser (VCSEL) array , comprising: 'wherein the plurality of VCSELs are in a two-dimensional pattern of VCSELs;', 'a plurality of VCSELs,'} wherein an electrical contact, of the plurality of electrical contacts, is co-located with a corresponding VCSEL of the plurality of VCSELs,', 'wherein the plurality of electrical contacts provides mechanical support to an adjacent element over the plurality of VCSELs,', 'wherein the plurality of electrical contacts extends to approximately a same height,', 'wherein the plurality of electrical contacts has a height that is greater than other elements of the VCSEL array on a same surface as the plurality of electrical contacts; and, 'a plurality of electrical contacts on a surface of the VCSEL array,'} wherein one of the plurality of metal interconnects electrically connects one of the plurality of electrical contacts and one of the plurality of VCSELs that corresponds to the one of the plurality of electrical contacts,', 'wherein a subset of the plurality of VCSELs can be powered via a corresponding subset of the plurality of electrical contacts and a corresponding subset of the plurality of metal ...

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Номер записи: 72
01-04-2021 дата публикации

Light emitting device and projector

Номер: US20210096451A1
Автор: Yoshiki Nakashima
Принадлежит: Seiko Epson Corp

The light emitting device includes an excitation light source, and a light emitting light source, wherein the light emitting light source includes a substrate, a photonic crystal structure which is provided to the substrate and has a light emitting layer, and an electrode configured to inject an electrical current into the light emitting layer, the excitation light source irradiates the light emitting layer with excitation light, the light emitting layer generates light due to the electrical current injected from the electrode and the excitation light, and in the photonic crystal structure, the light emitted in the light emitting layer resonates in an in-plane direction of the substrate, and a laser beam is emitted in a normal direction of the substrate.

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Номер записи: 73
06-04-2017 дата публикации

Electro-Optic Modulator Device, Optical Device and Method of Making an Optical Device

Номер: US20170097527A1
Автор: Wan-Yu Lee, Ying-hao Kuo
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region.

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Номер записи: 74
01-04-2021 дата публикации

Wavelength tunable laser device and method for manufacturing the same

Номер: US20210098963A1
Автор: Hideki Yagi
Принадлежит: Sumitomo Electric Industries Ltd

A wavelength tunable laser device includes a substrate including silicon, the substrate having a waveguide, a first semiconductor element bonded to the substrate, the first semiconductor element including an active layer of a group III-V compound semiconductor, and a second semiconductor element bonded to the substrate, the second semiconductor element facing to the first semiconductor element in a direction along which light emitted from the first semiconductor element propagates, the second semiconductor element including a grating formed of a group III-V compound semiconductor. The grating selects a wavelength of light.

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Номер записи: 75
01-04-2021 дата публикации

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер: US20210098971A1
Автор: Arakida Takahiro, Koda Rintaro, MASUI YUJI, Oki Tomoyuki, Yamauchi Yoshinori
Принадлежит:

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting element comprising:a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure;a wall structure disposed so as to surround the mesa structure, the wall structure having the same layer structure as a portion of the mesa structure in which the insulation region is provided;at least one bridge structure connecting the mesa structure and the wall structure, the bridge structure having the same layer structure as the portion of the mesa structure in which the insulation region is provided;a first electrode electrically connected to the first compound semiconductor layer; anda second electrode disposed on a top face of the wall structure, the second electrode being electrically connected to the second ...

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Номер записи: 76
12-05-2022 дата публикации

Laser element

Номер: US20220149589A1
Автор: Hsin-Chan CHUNG, Shou-Lung Chen
Принадлежит: iReach Corp

A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.

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Номер записи: 77
23-04-2015 дата публикации

Semiconductor Laser with Cathode Metal Layer Disposed in Trench Region

Номер: US20150110145A1
Автор: Scott Eugene Olson
Принадлежит: SEAGATE TECHNOLOGY LLC

A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

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Номер записи: 78
08-04-2021 дата публикации

Light-emitting element and method of manufacturing the same

Номер: US20210104870A1
Автор: Hiroshi Nakajima, Jugo Mitomo, Masamichi Ito, Noriyuki Futagawa, Shoichiro Izumi, Susumu Sato, Tatsushi Hamaguchi
Принадлежит: Sony Corp

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21 a and a second surface 21 b that is opposed to the first surface 21 a , an active layer 23 that faces the second surface 21 b of the first compound semiconductor layer 21 , and a second compound semiconductor layer 22 including a first surface 22 a that faces the active layer 23 and a second surface 22 b that is opposed to the first surface 22 a are laminated; a first light reflection layer 41 that is provided on the first surface 21 a side of the first compound semiconductor layer 21 ; and a second light reflection layer 42 that is provided on the second surface 22 b side of the second compound semiconductor layer 22 . The first light reflection layer 41 includes a concave mirror portion 43 , and the second light reflection layer 42 has a flat shape.

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Номер записи: 79
26-03-2020 дата публикации

Manufacturable laser diode formed on c-plane gallium and nitrogen material

Номер: US20200099196A1
Автор: Alexander Sztein, James W. RARING, Melvin McLaurin, Po Shan Hsu
Принадлежит: Soraa Laser Diode Inc

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

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Номер записи: 80
21-04-2016 дата публикации

Thermal Compensation for Burst-Mode Laser Wavelength Drift

Номер: US20160111856A1
Автор: Hongbing Lei, Jianhe GAO, Jianmin Gong, Xuejin Yan
Принадлежит: FutureWei Technologies Inc

An apparatus comprising a burst-mode laser comprising an active layer and configured to emit an optical signal during a burst period, wherein a temperature change of the burst-mode laser causes the optical signal to shift in wavelength, and a heater thermally coupled to the active layer and configured to reduce a wavelength shift of the optical signal during the burst period by applying heat to the active layer based on timing of the burst period.

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Номер записи: 81
19-04-2018 дата публикации

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Номер: US20180109075A1
Автор: Hirose Kazuyoshi, Kurosaka Yoshitaka, NOMOTO Yoshiro, Sugiyama Takahiro, Takiguchi Yuu
Принадлежит: HAMAMATSU PHOTONICS K.K.

In a semiconductor light emitting element provided with an active layer , a pair of cladding layers between which the active layer is interposed, and a phase modulation layer optically coupled to the active layer , the phase modulation layer includes a base layer A and a plurality of different refractive index regions B having different refractive indices from the base layer A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0 Подробнее

Номер записи: 82
28-04-2016 дата публикации

Tunable laser with high thermal wavelength tuning efficiency

Номер: US20160118772A1
Автор: Hongmin Chen, Rongsheng Miao, Xiao Shen, Xuejin Yan, Zongrong Liu
Принадлежит: FutureWei Technologies Inc

A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.

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Номер записи: 83
26-04-2018 дата публикации

SEMICONDUCTOR LASER DEVICE, PHOTOELECTRIC CONVERTER, AND OPTICAL INFORMATION PROCESSING UNIT

Номер: US20180115138A1
Автор: Ootorii Hiizu
Принадлежит:

A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture. 110.-. (canceled)11. A surface emitting semiconductor device comprising:a semiconductor structure having a mesa structure, the semiconductor structure comprising an active layer and a DBR layer;a first electrode on a top surface of the mesa structure;a first insulating film on a side surface and the top surface of the mesa structure, and having a first aperture;a second insulating film on the side surface and the top surface of the mesa structure, the first insulating film being between the mesa structure and the second insulating film, the second insulating film having a second aperture;a first wiring on the second insulating film, the first wiring (a) having a length along a first direction equal to or longer than a radius of the mesa structure along the first direction, (b) being in the first aperture and the second aperture, (c) extending across opposite sides of the second aperture along the first direction in a first cross section, and (d) being electrically connected to the mesa structure through the first aperture and the second aperture; anda second wiring including:(e) a first portion electrically connected to the semiconductor structure at a first contact region and (f) a second portion electrically connected to the semiconductor ...

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Номер записи: 84
27-04-2017 дата публикации

Atomic oscillator

Номер: US20170117911A1
Автор: Tetsuo Nishida
Принадлежит: Seiko Epson Corp

An atomic oscillator includes a gas cell having alkali metal atoms sealed therein; alight source that irradiates the gas cell with light; and a light detecting unit that detects the quantity of light transmitted through the gas cell. The light source includes an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order, an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.

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Номер записи: 85
18-04-2019 дата публикации

Data center transmission systems

Номер: US20190115722A1
Автор: Michael Renne Ty Tan, Sagi Varghese Mathai, Wayne Victor Sorin
Принадлежит: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

In the examples provided herein, a data center transmission system includes a VCSEL (vertical-cavity surface-emitting laser) that lases in a single spatial mode with a side mode suppression ratio of at least 25 dB, where the VCSEL is formed on a substrate and lases at a wavelength transparent to the substrate, and further where an output of the VCSEL exits through the substrate. Also, the VCSEL is directly modulated. The system further includes an optical fiber having a first end to receive the output of the VCSEL for propagation along the optical fiber. The optical fiber supports a single spatial mode without supporting higher order spatial modes over a range of wavelengths between 1260 nm and 1360 nm. The system also includes a receiver to receive the directly modulated output of the VCSEL after propagation through the optical fiber.

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Номер записи: 86
09-04-2020 дата публикации

Semiconductor Laser Diode and Method for Manufacturing a Semiconductor Laser Diode

Номер: US20200112142A1
Автор: Lell Alfred, Taeger Sebastian
Принадлежит:

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence. 119-. (canceled)20. A semiconductor laser diode comprising:an epitaxially produced semiconductor layer sequence comprising at least one active layer; anda gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.21. The semiconductor laser diode according to claim 20 , wherein the passivation layer comprises at least one layer with AlGaN.22. The semiconductor laser diode according to claim 21 , wherein a composition of the AlGaN varies over a thickness of the passivation layer.23. The semiconductor laser diode according to claim 20 , wherein the passivation layer comprises a layer stack with at least one layer with GaN and at least one layer with AlN.24. The semiconductor laser diode according to claim 20 , wherein the passivation layer comprises at least two layers with the same material having different thicknesses.25. The semiconductor laser diode according to claim 20 , wherein the semiconductor layer sequence has a ridge waveguide structure with a ridge having ridge side surfaces claim 20 , and wherein the surface region comprises at least one ridge side surface.26. The semiconductor laser diode according to claim 25 , wherein the passivation layer at least partially planarizes the ridge waveguide structure.27. The semiconductor laser diode according to claim 25 , wherein the passivation layer comprises at least a first layer formed laterally beside the ridge waveguide structure and spaced apart from the ridge waveguide structure claim 25 , and wherein the first layer claim 25 , a trench between the first layer and the ridge waveguide structure claim 25 , and a ...

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Номер записи: 87
13-05-2021 дата публикации

Laser arrangement with reduced building height

Номер: US20210143611A1
Автор: Pascal Jean Henri Bloemen, Petrus Theodorus Jutte, Stephan Gronenborn
Принадлежит: Trumpf Photonic Components GmbH

A laser arrangement includes a laser array, and an optical arrangement. The laser array includes lasers in a first pattern emitting a same laser emission profile around a first optical axis with a divergence angle θ/2. The optical arrangement has a diffusor with an array of optical elements in a second pattern, with a second optical axis, and with an illumination pattern along a first illumination axis in a field-of-view if laser light is received within a defined range smaller than or equal to a range of angles between −/+θ with respect to the second optical axis. A row of lasers parallel to the first illumination axis has a pitch p. A row of m optical elements is parallel to the first axis. Each optical element has a diameter L, and contacts its neighbor. The n lasers and the m optical elements satisfy n*p=m*L with a deviation smaller than +/−5%.

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Номер записи: 88
13-05-2021 дата публикации

Vertical cavity surface emitting laser device

Номер: US20210143614A1
Автор: Chung-Yu HONG, gang-wei Fan, Yu-Chen Lin
Принадлежит: Lextar Electronics Corp

A VCSEL device includes an N-type metal substrate and laser-emitting units on the N-type metal substrate. Each laser-emitting unit includes an N-type contact layer in contact with the N-type metal substrate; an N-type Bragg reflector layer in contact with the N-type contact layer; a P-type Bragg reflector layer above the N-type Bragg reflector layer; an active emitter layer between the P-type Bragg reflector layer and the N-type Bragg reflector layer; a current restriction layer between the active emitter layer and the P-type Bragg reflector layer; a P-type contact layer in contact with the P-type Bragg reflector layer; and an insulation sidewall surrounding all edges of the N-type and P-type Bragg reflector layers, the N-type and P-type contact layers, the active emitter layer and the current restriction layer. A P-type metal substrate has through holes each aligned with a current restriction hole of a corresponding laser-emitting unit.

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Номер записи: 89
24-07-2014 дата публикации

Semiconductor laser device, photoelectric converter, and optical information processing unit

Номер: US20140203196A1
Автор: Hiizu Ootorii
Принадлежит: Sony Corp

A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

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Номер записи: 90
03-05-2018 дата публикации

Method, system and apparatus for higher order mode suppression

Номер: US20180123317A1
Автор: Manoj Kanskar, Zhigang Chen
Принадлежит: NLight Inc, NLight Photonics Corp

A laser diode vertical epitaxial structure, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide, a lateral waveguide that is orthogonal to the transverse waveguide, wherein the lateral waveguide is bounded in a longitudinal direction at a first end by a facet coated with a high reflector (HR) coating and at a second end by a facet coated with a partial reflector (PR) coating and a higher order mode suppression layer (HOMSL) disposed adjacent to at least one lateral side of the lateral waveguide and that extends in a longitudinal direction.

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Номер записи: 91
16-04-2020 дата публикации

METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICES WITH COMPONENTS ON BOTH SIDES OF A SEMICONDUCTOR LAYER

Номер: US20200116927A1
Автор: Chantre Alain, Cremer Sébastien
Принадлежит:

A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide. 1. A method of making an integrated circuit , comprising:providing a substrate comprising a carrier substrate, a buried insulating layer, and a semiconductor layer above the buried insulating layer, the buried insulating layer being above the carrier substrate, the semiconductor layer having a first side and an opposite second side contacting the buried insulating layer;forming a grating coupler in the semiconductor layer;forming a first insulating layer over the first side of the semiconductor layer;forming a mirror in the first insulating layer, the mirror overlapping with the grating coupler;after forming the mirror, removing the carrier substrate and the buried insulating layer to expose the second side of the semiconductor layer; andafter removing the carrier substrate and the buried insulating layer, forming a second insulating layer to cover the exposed second side of the semiconductor layer, wherein the integrated circuit comprising the grating coupler and the mirror forms part of a photonic integrated circuit.2. The method according to claim 1 , wherein the semiconductor layer comprises a silicon layer.3. The method according to claim 1 , further comprising forming a laser source in the second insulating layer.4. The method according to claim 3 , wherein forming the laser source comprises:forming a patterned semiconductor heterostructure over the second insulating layer; anddepositing an encapsulant material surrounding the patterned semiconductor heterostructure.5. The method according to ...

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Номер записи: 92
25-04-2019 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20190123515A1
Автор: FUKAGAI Kazuo
Принадлежит:

A semiconductor device includes a first pair of nitride semiconductor regions, and a current confinement region which includes a first portion, a second portion disposed on a side of the first portion, and a third portion disposed on another side of the first portion. A width of the second portion is larger than a width of the first portion, the width of the second portion is larger than a width between the first pair of nitride semiconductor regions, and both ends of the second portion are covered by the first pair of nitride semiconductor regions, respectively. 1. A semiconductor device comprising:a substrate;a first nitride semiconductor layer of a first conductivity type disposed above a main surface of the substrate;a second nitride semiconductor layer disposed above the first nitride semiconductor layer;a third nitride semiconductor layer of a second conductivity type, which is an opposite conductivity type to the first conductivity type, disposed above the second nitride semiconductor layer;two fourth nitride semiconductor layers which are disposed between the third nitride semiconductor layer and the second nitride semiconductor layer and are spaced apart from each other;a current confinement region which is a region between the two fourth nitride semiconductor layers;a first pair of nitride semiconductor regions of the first conductivity type disposed in the third nitride semiconductor layer to be spaced apart from each other; anda first side surface and a second side surface to which the second nitride semiconductor layer is exposed,wherein each of the first side surface and the second side surface extends in a first direction,the current confinement region extends in a second direction intersecting the first direction and includes a first portion, a second portion disposed on the first side surface on one side of the first portion, and a third portion disposed on the second side surface on the other side of the first portion,a width of the second portion ...

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Номер записи: 93
16-04-2020 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20200119225A1
Автор: CHEN Hsin-Kang, CHEN Shou-Lung, HSU TZU-CHIEH, HUANG Yi-Wen
Принадлежит:

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface. 1. A semiconductor device comprising: a first reflective structure;', 'a second reflective structure; and', 'a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface;, 'a semiconductor stack comprising'}a trench formed in the semiconductor stack;a current confinement layer in the second reflective structure;a first electrode on the first surface; anda second electrode on the first surface.2. The semiconductor device according to claim 1 , further comprising an insulating layer filling in the trench.3. The semiconductor device according to claim 1 , further comprising a substrate on which the semiconductor stack is.4. The semiconductor device according to claim 3 , further comprising an etching stop layer between the first electrode and the substrate.5. The semiconductor device according to claim 4 , further comprising a contact layer between the etching stop layer and substrate.6. The semiconductor device according to claim 5 , wherein the contact layer comprises a doped semiconductor.7. The semiconductor device according to claim 1 , wherein the semiconductor device is configured to emit a radiation to escape to the outside in a direction from the first surface toward the second surface.8. The semiconductor device ...

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Номер записи: 94
16-04-2020 дата публикации

RESONANT OPTICAL CAVITY LIGHT EMITTING DEVICE

Номер: US20200119226A1
Автор: Atanackovic Petar
Принадлежит: Silanna UV Technologies Pte Ltd

Resonant optical cavity light emitting devices are disclosed, where the device includes an opaque substrate, a first spacer region, a first reflective layer, a light emitting region, a second spacer region, and a second reflective layer. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The second reflective layer may have a metal composition comprising elemental aluminum and a thickness less than 15 nm. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·λ/n. K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength. 1. A resonant optical cavity light emitting device comprising:a substrate that is opaque to a target emission deep ultraviolet wavelength (target wavelength);a first reflective layer on the substrate, the first reflective layer being a distributed Bragg reflector (DBR) that has a reflectivity of greater than 90% for the target wavelength;a first spacer region coupled to the first reflective layer, the first spacer region being non-absorbing to the target wavelength, wherein at least a portion of the first spacer region comprises a first electrical polarity;a light emitting region on the first spacer region, the light emitting region being configured to emit the target wavelength;a second spacer region on the light emitting region, the second spacer region being non-absorbing to the target wavelength, wherein at least a portion of the second spacer region comprises a second electrical polarity opposite of the first electrical polarity; anda second reflective layer coupled to the second spacer region, the second reflective layer having a metal composition comprising elemental aluminum and having a thickness less ...

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Номер записи: 95
16-04-2020 дата публикации

TOPOLOGICAL INSULATOR LASER SYSTEM

Номер: US20200119524A1
Автор: BANDRES MOTOLA Miguel Angel, CHRISTODOULIDES Demetrios N., HARARI Gal, SEGEV Mordechai
Принадлежит:

A topological laser system is described. The laser system comprises an array of optical elements arranged in an array and coupled between them such that the array is configured for supporting one or more topological modes. The plurality of optical elements comprises optical elements carrying gain material configured for emitting optical radiation in response to pumping energy. The laser system further comprises a pumping unit configured to provide pumping of a group of the optical elements of the array within at least a portion of the spatial region corresponding with said topological mode; and at least one output port optically coupled to one or more of the optical elements associated with said topological mode. The at least one output ports is configured for extracting a portion of light intensity from said laser system. 1. A laser system comprising:an array of optical elements comprising optical elements comprising gain material, the optical elements of the array are optically coupled between them and are spatially arranged supporting at least one topological mode associated with certain spatial region of the array;a pumping unit configured to provide pumping of a group of the optical elements of the array within at least a portion of the spatial region corresponding with said topological mode; andat least one output port optically coupled to one or more of the optical elements associated with said topological mode, said at least one output ports being configured for extracting a portion of light intensity from said laser system.2. The laser system of claim 1 , wherein said array of optical elements is configured as a photonic crystal having a band structure associated with photonic states within said photonic crystal claim 1 , said band structure comprising one or more photonic states crossing a gap between bands of the photonic states; said one or more photonic states crossing said gap correspond with the at least one topological mode within the array.3. The ...

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Номер записи: 96
27-05-2021 дата публикации

ON-CHIP ULTRA-NARROW LINEWIDTH LASER AND METHOD FOR OBTAINING SINGLE-LONGITUDINAL MODE ULTRA-NARROW LINEWIDTH OPTICAL SIGNAL

Номер: US20210159658A1
Автор: Gao Lei, Huang Ligang, Yin Guolu, Zhu Tao
Принадлежит:

An on-chip ultra-narrow linewidth laser and a method for obtaining a single-longitudinal mode ultra-narrow linewidth optical signal are provided in the present invention. The on-chip ultra-narrow linewidth laser includes a laser generating gain unit for generating a broad-spectrum initial optical signal and performing wavelength filtering on the generated optical signal, and also includes a distributed scattering feedback unit for performing linewidth compression on the optical signal; the laser generating gain unit is connected with the distributed scattering feedback unit, so that the optical signal generated by the laser generating gain unit is subjected to wavelength filtering and then output to the light guide component of the distributed scattering feedback unit to scatter to form an optical signal with a narrower linewidth to achieve linewidth compression, and the optical signal returning along the original path and fed back to the optical signal of the laser generating gain unit is subjected to gain amplification and wavelength filtering once again, repeating until achieving a steady state so as to obtain a single-longitudinal mode ultra-narrow linewidth optical signal. The laser can obtain a steady single-longitudinal mode ultra-narrow linewidth optical signal, and is simple in structure and small in volume. 1. An on-chip ultra-narrow linewidth laser , comprising:{'b': '3', 'a laser generating gain unit () for generating a broad-spectrum initial optical signal and performing wavelength filtering on the generated optical signal; and'}{'b': '1', 'a distributed scattering feedback unit () for performing linewidth compression on the optical signal, wherein{'b': '1', 'claim-text': [{'b': 3', '1', '3', '1, 'the laser generating gain unit () is connected with the distributed scattering feedback unit (), so that the optical signal generated by the laser generating gain unit () is subjected to wavelength filtering and then output to the light guide component of the ...

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Номер записи: 97
10-05-2018 дата публикации

Tunable Waveguide Devices

Номер: US20180131159A1
Автор: Fred A. Kish, Jr., Jin Yan, John W. Osenbach, Mingzhi Lu, Peter W. Evans, Scott Corzine, Vikrant Lal
Принадлежит: Infinera Corp

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

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Номер записи: 98
11-05-2017 дата публикации

Semiconductor laser and method for manufacturing the same

Номер: US20170133820A1
Автор: Masafumi Minami, Motoshi KITAGAWA, Naohisa Tamada, Takahiro Ueno
Принадлежит: Mitsubishi Electric Corp

A method for manufacturing a semiconductor laser of the present invention includes a step of forming an insulating film on a surface of a grooved semiconductor substrate, a step of pasting an insulating sheet to a top surface of the insulating film so as to cover an opening of the groove and forming an insulating layer on the semiconductor substrate, a step of forming an opening of providing a first opening in the insulating layer so that a part corresponding to an electrode of the semiconductor substrate is exposed and a step of forming the electrode on a top surface of the insulating layer so as to fill the first opening.

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Номер записи: 99
02-05-2019 дата публикации

Edge-emitting Semiconductor Laser and Method for Operating a Semiconductor Laser

Номер: US20190131773A1
Автор: BACHMANN Alexander
Принадлежит:

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10and by at most 5×10. 1. An edge-emitting semiconductor laser comprising:an active zone within a semiconductor layer sequence; anda stress layer;wherein the active zone is configured to be energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence,wherein the semiconductor layer sequence has a constant thickness throughout in a region of the longitudinal strip so that the semiconductor laser is gain-guided so that a resonator is defined by an energization region of the active zone, and wherein the resonator is free from being defined by a strip waveguide;wherein a spacing between the stress layer and the active zone, in a direction longitudinal with respect to the growth direction, is at most 2 μm;wherein the longitudinal strip is free of the stress layer and the stress layer is disposed only in regions in which no input of current into the semiconductor layer sequence takes place; and{'sup': −4', '−3, 'wherein, as a result of the stress layer, the semiconductor layer sequence is mechanically stressed in a ...

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Номер записи: 100