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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 3410. Отображено 100.
04-10-2012 дата публикации

Method for producing electrostatic chuck and electrostatic chuck

Номер: US20120250212A1
Принадлежит: NGK Insulators Ltd

A method for producing an electrostatic chuck 10 includes the steps of (a) pouring a ceramic slurry containing a ceramic powder, a solvent, a dispersant, and a gelling agent into a first molding die 31 in which an electrostatic electrode precursor 24 is removably attached to an inner surface of the first molding die 31 , gelatinizing the ceramic slurry by causing a chemical reaction of the gelling agent, and then removing the first molding die 31 to prepare an embedded-electrode-containing ceramic molded body 41 X in which the electrostatic electrode precursor 24 is embedded in a first ceramic molded body 41 ; (b) preparing a second ceramic molded body 42 ; and (c) preparing a stacked calcined body 50 using the embedded-electrode-containing ceramic molded body 41 X and the second ceramic molded body 42 , and conducting hot-press firing of the stacked calcined body 50.

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10-01-2013 дата публикации

Materials for Electroadhesion and Electrolaminates

Номер: US20130010398A1
Принадлежит: SRI International Inc

An electroadhesive device includes an outer surface adapted to interface with a surface of a foreign substrate, a plurality of electrodes ( 18 ), and a semi-conductive insulation material ( 20 ) disposed adjacent to at least one of the electrodes ( 18 ). Each electrode ( 18 ) has a respective conductive volume and is configured to apply a voltage at a respective location of the outer surface, and the difference in voltage between applied voltages includes an electrostatic adhesion voltage that produces an electro-static force between the device and the substrate ( 16 ) that is suitable to maintain a current position of the device relative to the substrate ( 16 ). The insulation material ( 20 ) can be polyurethane or any other suitable material having a resistance of about 109 to 1012 ohms*m. The insulation material effectively operates to expand the conductive volume of the electrodes ( 18 ) when they are actuated.

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28-02-2013 дата публикации

Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment

Номер: US20130048217A1
Автор: Norio Shiraiwa
Принадлежит: Shinko Electric Industries Co Ltd

An electrostatic chuck includes, a chuck function portion including a plurality of chuck regions on which an attractable object is placed respectively, and a concave surface portion provided in an outer region of the chuck regions, and electrodes arranged in an inner part of the chuck function portion corresponding to the chuck regions and an inner part of the chuck function portion corresponding to the concave surface portion, respectively.

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21-03-2013 дата публикации

High Surface Resistivity Electrostatic Chuck

Номер: US20130070384A1
Принадлежит:

In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 10ohms per square. 1. An electrostatic chuck comprising:an electrode; and{'sup': 11', '16, 'a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of from about 1×10ohms/square to about 1×10ohms/square.'}24-. (canceled)5. An electrostatic chuck according to claim 1 , wherein the charge control layer comprises a surface resistivity of from about 1×10ohms/square to about 1×10ohms/square.6. An electrostatic chuck according to claim 1 , wherein the charge control layer comprises a surface resistivity of from about 1×10ohms/square to about 1×10ohms/square.7. An electrostatic chuck according to claim 1 , wherein the charge control layer comprises a polymer.8. An electrostatic chuck according to claim 7 , wherein the polymer comprises at least one of polyetherimide (PEI) claim 7 , polyimide and polyether ether ketone (PEEK).9. An electrostatic chuck according to claim 1 , wherein the charge control layer comprises at least one of silicon containing nitride claim 1 , silicon containing oxide claim 1 , silicon containing carbide claim 1 , non-stoichiometric silicon containing nitride claim 1 , non-stoichiometric silicon containing oxide claim 1 , non-stoichiometric silicon containing carbide claim 1 , carbon and a nitride compound of carbon.10. An electrostatic chuck according to claim 9 , wherein the charge control layer comprises at least one of SiON claim 9 , in which claim 9 , neglecting any hydrogen ...

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11-04-2013 дата публикации

ELECTROSTATIC CHUCK

Номер: US20130088808A1
Принадлежит: Applied Materials, Inc.

Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for retaining a substrate includes a base plate, a ceramic plate, supported by the base plate, having a substrate supporting surface, a first plurality of electrodes disposed within the ceramic plate having a first polarity, and a second plurality of electrodes disposed within the ceramic plate have a second polarity opposite from the first polarity, wherein the first and second plurality of electrodes are independently controllable to provide a desired chucking power and frequency. 1. An electrostatic chuck for retaining a substrate , comprising:a base plate;a ceramic plate, supported by the base plate, having a substrate supporting surface;a first plurality of electrodes disposed within the ceramic plate having a first polarity; anda second plurality of electrodes disposed within the ceramic plate have a second polarity opposite from the first polarity, wherein the first and second plurality of electrodes are independently controllable to provide a desired chucking power and frequency.2. The electrostatic chuck of claim 1 , wherein the first and second plurality of electrodes are disposed in a concentric pattern such that the first and second plurality of electrodes include a plurality of exterior electrodes disposed about a plurality of interior electrodes.3. The electrostatic chuck of claim 1 , wherein the first and second plurality of electrodes are disposed in four quadrants of the ceramic plate claim 1 , and wherein each quadrant of the ceramic plate includes one exterior electrode disposed radially outward of one interior electrode.4. The electrostatic chuck of claim 3 , wherein a polarity of respective adjacent electrodes is opposite of each other such that no two adjacent electrodes have the same polarity.5. The electrostatic chuck of claim 1 , wherein the first and second plurality of electrodes are alternately arranged in a radial pattern about the ...

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11-04-2013 дата публикации

ELECTROSTATIC CHUCK WITH TEMPERATURE CONTROL

Номер: US20130088809A1
Принадлежит: Applied Materials, Inc.

Embodiments of an apparatus for controlling a temperature of an electrostatic chuck in a process chamber are provided herein. In some embodiments, the apparatus includes an electrostatic chuck disposed in a process chamber, the electrostatic chuck including a ceramic plate having a substrate supporting surface, and a cooling assembly including a plurality of cooling plates disposed below the electrostatic chuck to adjust the cooling capacity of the electrostatic chuck. In some embodiments, the plurality of cooling plates includes an inner cooling plate configured to control a temperature of a center portion of the electrostatic chuck, and an outer cooling plate configured to control a temperature of an outer portion of the electrostatic chuck. In some embodiments, the plurality of cooling plates includes an upper cooling plate that contacts a bottom surface of the electrostatic chuck, and a lower cooling plate which contacts a bottom surface of the upper cooling plate. 1. Apparatus for controlling a temperature of an electrostatic chuck in a process chamber , comprising:an electrostatic chuck disposed in a process chamber, the electrostatic chuck including a ceramic plate having a substrate supporting surface; anda cooling assembly including a plurality of cooling plates disposed below the electrostatic chuck to adjust the cooling capacity of the electrostatic chuck.2. The apparatus of claim 1 , wherein the cooling assembly is engaged to the electrostatic chuck by one or more springs disposed between a bottom surface of the cooling assembly and a body of the process chamber.3. The apparatus of claim 1 , wherein each of the plurality of cooling plates includes one or more coolant channels configured to circulate a coolant therethrough.4. The apparatus of claim 3 , wherein the plurality of cooling plates includes an inner cooling plate configured to control a temperature of a center portion of the electrostatic chuck claim 3 , and an outer cooling plate configured to ...

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02-05-2013 дата публикации

SOLAR WAFER ELECTROSTATIC CHUCK

Номер: US20130105087A1
Принадлежит: INTEVAC, INC.

An electrostatic chuck is disclosed, which is especially suitable for fabrication of substrates at high throughput. The disclosed chuck may be used for fabricating large substrates or several smaller substrates simultaneously. For example, disclosed embodiments can be used for fabrication of multiple solar cells simultaneously, providing high throughput. An electrostatic chuck body is constructed using aluminum body having sufficient thermal mass to control temperature rise of the chuck, and anodizing the top surface of the body. A ceramic frame is provided around the chuck's body to protect it from plasma corrosion. If needed, conductive contacts are provided to apply voltage bias to the wafer. The contacts are exposed through the anodization. 1. An electrostatic chuck for plasma processing chamber , comprising:an aluminum chuck body having an anodized top surface;a ceramic frame provided around and bonded to the aluminum body;high voltage electrical contacts electrically connected to the aluminum body.2. The electrostatic chuck of claim 1 , further comprising a ceramic plate bonded to bottom surface of the aluminum body.3. The electrostatic chuck of claim 2 , wherein the ceramic plate made is integral with the ceramic frame claim 2 , thereby forming a tub claim 2 , and wherein the aluminum body is bonded inside the tub.4. The electrostatic chuck of claim 3 , wherein the top surface of the frame is flush with the anodized top surface.5. The electrostatic chuck of claim 2 , further comprising a base attached to bottom surface of the ceramic plate.6. The electrostatic chuck of claim 2 , further comprising an insulating plate attached to bottom surface of the ceramic plate claim 2 , and a base attached to bottom surface of the insulating plate.7. The electrostatic chuck of claim 6 , wherein the insulating plate is configured to vary capacitive coupling of RF power to the base.8. The electrostatic chuck of claim 6 , wherein the insulating plate has a non-uniform ...

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02-05-2013 дата публикации

Electrostatic chuck

Номер: US20130107415A1
Принадлежит: Applied Materials Inc

Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for supporting and retaining a substrate having a given width may include a dielectric member having a support surface configured to support a substrate having a given width; an electrode disposed within the dielectric member beneath the support surface and extending from a center of the dielectric member outward to an area beyond an outer periphery of the substrate as defined by the given width of the substrate; an RF power source coupled to the electrode; and a DC power source coupled to the electrode.

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16-05-2013 дата публикации

Electrostatic Chuck with Photo-Patternable Soft Protrusion Contact Surface

Номер: US20130120897A1
Принадлежит: ENTEGRIS, INC.

In accordance with an embodiment of the invention, there is provided a soft protrusion structure for an electrostatic chuck, which offers a non-abrasive contact surface for wafers, workpieces or other substrates, while also having improved manufacturability and compatibility with grounded surface platen designs. The soft protrusion structure comprises a photo-patternable polymer. 1. An electrostatic chuck comprising:a surface layer activated by a voltage in an electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a plurality of protrusions comprising a photo-patternable polymer and a charge control layer to which the plurality of polymer protrusions adhere, the plurality of polymer protrusions extending to a height above portions of the charge control layer surrounding the plurality of polymer protrusions to support the substrate upon the plurality of polymer protrusions during electrostatic clamping of the substrate.2. An electrostatic chuck according to claim 1 , wherein the photo-patternable polymer comprises a photo-patternable polymer that is liquid at room temperature prior to baking3. An electrostatic chuck according to claim 1 , wherein the photo-patternable polymer comprises a photo-patternable polymer that is solid at room temperature prior to baking.4. An electrostatic chuck according to claim 1 , wherein the photo-patternable polymer comprises an epoxy based photo-patternable polymer.5. An electrostatic chuck according to claim 1 , wherein the photo-patternable polymer comprises at least one of a polyimide based photo-patternable polymer and a benzocyclobutene based photo-patternable polymer.6. An electrostatic chuck according to claim 1 , wherein the charge control layer comprises silicon carbide.7. An electrostatic chuck according to claim 1 , wherein the charge control layer comprises diamond like carbon.8. An electrostatic chuck according to claim 1 , wherein the charge ...

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20-06-2013 дата публикации

DECHUCK CONTROL METHOD AND PLASMA PROCESSING APPARATUS

Номер: US20130153147A1
Принадлежит: TOKYO ELECTRON LIMITED

A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck. 1. A dechuck control method for dechucking a processing object from an electrostatic chuck that electrostatically attracts the processing object and includes a chuck electrode , the method comprising the steps of:performing a discharge process after a plasma process by introducing an inert gas into a processing chamber and maintaining a pressure within the processing chamber at a first pressure;monitoring at least one of a pressure of a heat transmitting gas supplied to a rear face of the processing object that is placed on the electrostatic chuck and a leakage flow rate of the heat transmitting gas leaking from the rear face of the processing object;obtaining an amount of residual electric charge of a surface of the electrostatic chuck and a polarity of the residual electric charge based on a monitoring result of the monitoring step, obtaining a voltage for supplying to the chuck electrode an electric charge that is of the same amount as the residual electric charge and of the opposite polarity with respect to the polarity of the residual electric ...

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20-06-2013 дата публикации

Process kit components for use with an extended and independent rf powered cathode substrate for extreme edge tunability

Номер: US20130154175A1
Принадлежит: Applied Materials Inc

Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

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20-06-2013 дата публикации

Extended and independent rf powered cathode substrate for extreme edge tunability

Номер: US20130155568A1
Принадлежит: Applied Materials Inc

Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.

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20-06-2013 дата публикации

High Conductivity Electrostatic Chuck

Номер: US20130155569A1
Принадлежит:

In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10to about 10ohms per square. 1. An electrostatic chuck , comprising:a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and{'sup': 8', '12, 'a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10to about 10ohms per square.'}2. An electrostatic chuck according to claim 1 , wherein the conductive path comprises a surface resistivity of less than about 10ohms per square.3. An electrostatic chuck according to claim 2 , wherein the conductive path comprises a surface resistivity in the range of from about 10ohms per square to about 10ohms per square.4. An electrostatic chuck according to claim 1 , wherein the conductive path comprises diamond-like carbon.5. An electrostatic chuck according to claim 4 , wherein the conductive path comprises doped diamond-like carbon.6. An electrostatic chuck according to claim 5 , wherein the conductive path comprises hydrogenated carbon doped with nitrogen.7. An electrostatic chuck according to claim 1 , wherein the conductive path comprises a coating of a thickness less than about 1 micron.8. An electrostatic chuck according to claim 1 , wherein the conductive path comprises a coating covering at least a portion of an outside edge of the electrostatic chuck.9. An electrostatic chuck according to claim 8 , wherein the conductive path wraps ...

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08-08-2013 дата публикации

ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK

Номер: US20130201598A1
Принадлежит: TOTO LTD.

An electrostatic chuck comprises: a dielectric substrate having a protrusion and a planar surface part. The protrusion is formed on a major surface of the dielectric substrate. An adsorption target material is mounted on the major surface. The planar surface part is formed in a periphery of the protrusion. The dielectric substrate is formed from a polycrystalline ceramics sintered body. A top face of the protrusion is a curved surface, and a first recess is formed in the top face to correspond to crystal grains that appear on the surface. The planar surface part has a flat part, and a second recess is formed in the flat part. A depth dimension of the first recess is greater than a depth dimension of the second recess. The electrostatic chuck can suppress the generation of particles and a method for manufacturing the electrostatic chuck is provided. 1. An electrostatic chuck , comprising a dielectric substrate having a protrusion and a planar surface , the protrusion being formed on a major surface of the dielectric substrate , an adsorption target material being mounted on the major surface , the planar surface part being formed in a periphery of the protrusion ,the dielectric substrate being formed from a polycrystalline ceramics sintered body, andan interference fringe space occupancy ratio on the major surface found by using a laser microscope is less than 1%.2. The electrostatic chuck according to claim 1 , wherein an average grain diameter of crystal grains of the polycrystalline ceramics sintered body is less than a height dimension of the protrusion.3. The electrostatic chuck according to claim 2 , wherein the average grain diameter is not more than 1.5 μm.4. The electrostatic chuck according to claim 2 , a standard deviation of a distribution of the grain diameter of the crystal grains is not more than 1 μm.5. The electrostatic chuck according to claim 1 , wherein the dielectric substrate is formed from a polycrystalline alumina sintered body and has a bulk ...

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19-09-2013 дата публикации

Electroadhesive Handling And Manipulation

Номер: US20130242455A1
Принадлежит: SRI INTERNATIONAL

An electroadhesive gripping system includes a shear gripper. The shear gripper can include an electroadhesive surface associated with one or more electrodes and a load-bearing structure coupled to the electroadhesive surface. A power supply can be configured to apply voltage to the one or more electrodes associated with the electroadhesive surface. A controller can be configured to cause a voltage to be applied, via the power supply, to the one or more electrodes associated with the electroadhesive surface to thereby cause the first shear gripper to adhere to an item situated proximate the electroadhesive surface. The controller can be configured to cause a shear force to be applied to the adhered item, via the load-bearing structure, that is sufficient to move the adhered item. 1. A system comprising:a first shear gripper including an electroadhesive surface associated with one or more electrodes and a load-bearing structure coupled to the electroadhesive surface;a power supply configured to electrically connect to the one or more electrodes associated with the electroadhesive surface; anda controller configured to (i) cause a voltage to be applied, via the power supply, to the one or more electrodes associated with the electroadhesive surface to thereby cause the first shear gripper to adhere to an item situated proximate the electroadhesive surface and (ii) cause a shear force to be applied to the adhered item, via the load-bearing structure, wherein the shear force is sufficient to move the adhered item.2. The system according to claim 1 , wherein the first shear gripper is configured to adhere to a sidewall of the item and to move the item in a direction substantially parallel to the sidewall via shear interaction between the electroadhesive surface and the sidewall.3. The system according to claim 1 , further comprising:a second shear gripper including an electroadhesive surface associated with one or more electrodes and a load-bearing structure coupled to the ...

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24-10-2013 дата публикации

Electrostatic chuck with advanced rf and temperature uniformity

Номер: US20130279066A1
Принадлежит: Individual

Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

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31-10-2013 дата публикации

HIGH TEMPERATURE ELECTROSTATIC CHUCK WITH REAL-TIME HEAT ZONE REGULATING CAPABILITY

Номер: US20130284374A1
Принадлежит:

Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end. 1. A dielectric chuck body for an electrostatic chuck , comprising:a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface;an electrode embedded in the substrate supporting plate; anda shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end, wherein the second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate, the shaft being hollow and having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.2. The dielectric chuck body of claim 1 , further comprising one or more heating elements embedded in the substrate supporting plate and configured to heat the substrate disposed on the top surface.3. The dielectric chuck body of claim 2 , wherein the one or more heating elements form two or more independent heating zones.4. The dielectric chuck body of claim 2 , further comprising connectors disposed in the central opening of the shaft claim 2 , wherein the ...

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31-10-2013 дата публикации

MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

Номер: US20130286533A1
Принадлежит: NGK Insulators, Ltd.

A member for a semiconductor manufacturing apparatus includes an electrostatic chuck , a cooling unit , a spacer (an O-ring , an outer periphery spacer , or the like) for securing a gap placed between the electrostatic chuck and the cooling unit , and a clamp ring placed on the upper surface of the outer periphery of the electrostatic chuck . The clamp ring is fastened to the cooling unit with screws . The screws are inserted into coil springs that prevent loosening, and are fastened to nuts . The coil springs are attached not to the clamp ring side but to the cooling unit side. 1. A member for a semiconductor manufacturing apparatus , including:an electrostatic chuck, a cooling unit, a spacer for securing a gap placed between the electrostatic chuck and the cooling unit, and a clamp ring placed on the upper surface of the outer periphery of the electrostatic chuck, the electrostatic chuck and the cooling unit are fixed to each other by fastening the clamp ring to the cooling unit with screws,wherein the screws are inserted into spring members that prevent loosening, and are tightened, and,the spring members are attached not to the clamp ring side but to the cooling unit side.2. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein the spring members are coil springs.3. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein the screw feet of the screws pass through the clamp ring and the cooling unit from the clamp ring side claim 1 , and after the screw feet pass through the cooling unit claim 1 , nuts are screwed on the screw feet claim 1 , with the spring members therebetween.4. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein heat-transfer gas is supplied to the gap.5. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein a dot-like outer periphery spacer is placed at a position where a gap outer peripheral part of the gap along the ...

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07-11-2013 дата публикации

Electroadhesive Conveying Surfaces

Номер: US20130294875A1
Принадлежит: SRI INTERNATIONAL

An electroadhesive gripping platform includes one or more electrodes. A power supply is configured to apply voltage to the one or more electrodes in the electroadhesive platform via one or more terminals. A controller is configured to operate the electroadhesive gripping platform to selectively adhere to items loaded thereon and thereby enhance traction control over such items. The controller can control the power supply to apply a voltage to the one or more electrodes in the electroadhesive platform to thereby cause the electroadhesive platform to adhere to an item disposed on the electroadhesive platform such that the item resists moving with respect to the electroadhesive platform. The controller can also control the voltage supply to reduce the voltage applied to the one or more terminals such that the item moves with respect to the electroadhesive platform. 1. A system comprising:an electroadhesive platform including one or more electrodes;a power supply configured to electrically connect to the one or more electrodes in the electroadhesive platform;a controller configured to: (i) control the power supply to apply a voltage to the one or more electrodes in the electroadhesive platform to thereby cause the electroadhesive platform to adhere to an item disposed on the electroadhesive platform such that the item resists moving with respect to the electroadhesive platform and (ii) control the voltage supply to reduce the voltage applied to the one or more electrodes such that the item moves with respect to the electroadhesive platform.2. The system according to claim 1 , wherein the electroadhesive platform includes a compliant electroadhesive gripping surface that is attracted to an exterior surface of the item responsive to the voltage being applied.3. The system according to claim 1 , wherein the applied voltage is sufficient to cause the item to substantially track a path of the electroadhesive platform while the electroadhesive platform is in motion.4. The ...

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21-11-2013 дата публикации

Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp

Номер: US20130308116A1
Принадлежит: Asml Holding Nv

An electrostatic clamp for use in a lithographic apparatus includes burls and an electrode surrounded by an insulator and/or a dielectric material between adjacent burls. In an embodiment, two or more layers of dielectric material are provided between adjacent burls and surround an electrode provided between adjacent burls. The electrostatic clamp may be used to clamp an object to an object support in a lithographic apparatus.

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21-11-2013 дата публикации

ELECTROSTATIC CHUCK AND METHOD FOR MANUFACTURING THE ELECTROSTATIC CHUCK

Номер: US20130308244A1
Автор: KAWAI Jiro, SHIRAIWA Norio
Принадлежит: SHINKO ELECTRIC INDUSTRIES CO., LTD.

An electrostatic chuck includes a pedestal part formed of metal and including a gas passage, an insulation substrate mounted on the pedestal part and including a first surface facing the pedestal part and a second surface on an opposite side of the first surface, the first surface including a first hole part communicating with the gas passage, the second surface including a second hole part having a bore diameter less than that of the first hole part and communicating with the first hole part, and an insulation flow part formed of an insulating material and including a first end provided in the first hole part and a second end provided in the gas passage. The insulation flow part is configured to allow a gas supplied from the gas passage to flow into the second hole part. 1. An electrostatic chuck comprising:a pedestal part formed of metal and connected to a high frequency power source, the pedestal part including a gas passage;an insulation substrate mounted on the pedestal part and including a first surface facing the pedestal part and a second surface on an opposite side of the first surface, the first surface including a first hole part communicating with the gas passage, the second surface including a second hole part having a bore diameter less than that of the first hole part and communicating with the first hole part; andan insulation flow part formed of an insulating material and including a first end provided in the first hole part and a second end provided in the gas passage;wherein the insulation flow part is configured to allow a gas supplied from the gas passage to flow into the second hole part.2. The electrostatic chuck as claimed in claim 1 ,wherein the gas passage includes an inlet into which the gas flows,wherein the second end of the insulation flow part is positioned at the inlet of the gas passage.3. The electrostatic chuck as claimed in claim 1 , wherein the insulation flow part is formed of a tubular member.4. The electrostatic chuck as ...

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26-12-2013 дата публикации

EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY

Номер: US20130340942A1
Принадлежит: LAM RESEARCH CORPORATION

A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance. 1. A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber comprising:a temperature controlled lower base plate, an upper plate, and a mounting groove surrounding a bond layer in the lower electrode assembly; andan edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance.2. The electrode assembly of claim 1 , wherein the concave surface is a single curved surface claim 1 , a single inclined surface oriented such that the band is widest at an upper end thereof and narrowest at a lower end thereof or a pair of converging inclined surfaces oriented such that the band is widest at upper and lower ends thereof and narrowest at a middle thereof.3. The electrode assembly of claim 1 , wherein the outer surface of the band includes a cylindrical surface of uniform diameter at an upper end of the band extending less than 1/10 of the height of the band.4. The electrode assembly of claim 1 , wherein the band has a height of 0.05 to 0.15 inch claim 1 , a width of 0.025 to 0.040 inch claim 1 , and inner diameter of 11.3 to 11.4 inches and each edge of the band is rounded with a radius of 0.001 to 0.010 inch.5. The electrode assembly of claim 1 , wherein the band has an upper annular surface claim 1 , a lower ...

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09-01-2014 дата публикации

Detachable generator device

Номер: US20140009861A1
Принадлежит: Creative Technology Corp

Provided is a detachable generator device which can change the installation location with ease and which can effectively use a solar cell to generate electric power. The detachable generator device includes: a film-like solar cell; and attaching/detaching means for allowing the film-like solar cell to be attached to and detached from an attachment object at an installation location. The attaching/detaching means includes an adhesive film having an attaching/detaching surface which develops Van der Waals force to enable repeated affixation, or an electrostatic chuck for forming an attaching/detaching surface by turning on/off a voltage source connected to an attraction electrode sandwiched between two insulating layers to freely develop electrostatic attraction on a surface of at least one of the insulating layers.

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06-02-2014 дата публикации

Mobile robotic manipulator system

Номер: US20140035306A1
Принадлежит: SRI International Inc

Robotic hands and finger modules include an under-actuated finger with multiple joints including a distal joint, an intermediate joint, and a proximal joint. A brake subsystem in communication with each of the joints selectively locks and unlocks the joints individually. A robotic hand can selectively lock the joints of a finger individually such that one or more joints are locked while one or more joints are unlocked. In addition, the finger module can drive a tendon coupled to the joints to flex the underactuated finger in a manner determined by which of the joints is locked and which of the joints is unlocked. A robotic hand can move an underactuated finger with its distal and proximal joints unlocked until the finger makes contact with an object, and lock the proximal joint, in response to contact made with the object, while the distal joint remains unlocked.

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06-02-2014 дата публикации

Vacuum Augmented Electroadhesive Device

Номер: US20140036404A1
Принадлежит: SRI INTERNATIONAL

An electroadhesive gripping system includes a vacuum-augmented gripper. The gripper can include an electroadhesive surface associated with one or more electrodes and a load-bearing backing structure coupled to the electroadhesive surface. The backing couples to the backside of the electroadhesive surface so as to at least partially define a shape of the electroadhesive surface. The backing is configured to flex between a curled shape and an uncurled shape. A spreading arm is configured to apply force to the backing so as to flex the backing from the curled shape to the uncurled shape. When positioned next to a substrate, the uncurling motion of the backing can cause the electroadhesive surface to become vacuum sealed to the substrate. A power supply can be configured to apply voltage to the electroadhesive surface. 1. A system comprising:an electroadhesive surface associated with one or more electrodes;a load-bearing backing coupled to a backside of the electroadhesive surface so as to at least partially define a shape thereof, wherein the backing is configured to flex from a curled shape to an uncurled shape, wherein the flexion induces a corresponding transition in the shape of the electroadhesive surface; anda power supply configured to apply a voltage to the one or more electrodes associated with the electroadhesive surface to thereby cause the electroadhesive surface to adhere to an item situated proximate to the electroadhesive surface.2. The system according to claim 1 , wherein the transition in shape of the electroadhesive surface includes transitioning from a first shape claim 1 , in which the backing has the curled shape claim 1 , to a second shape claim 1 , in which the backing has the uncurled shape claim 1 , wherein the first shape has a greater convex curvature than the second shape.3. The system according to claim 2 , wherein the backing is configured such that the transition from the first shape to the second shape claim 2 , by the electroadhesive ...

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27-02-2014 дата публикации

Electrostatic Carrier Tray

Номер: US20140055907A1
Автор: Smith Eryn
Принадлежит:

An electrostatic carrier tray is an apparatus that is used to temporarily grasp and to transport semiconductive coupons/wafers. The apparatus mainly includes a primary substrate, a plurality of electrostatics field generating circuits, a conformal coating, a structural backing, and a power-delivery and control system. The electrostatics field generating circuits are positioned on one side of the primary substrate, and the power delivery and control system is positioned on the other side of the primary substrate. The electrostatics field generating circuits are used to bond the semiconductive coupons/wafers to the apparatus. The structural backing is used to handle the apparatus while transporting the semiconductive coupons/wafers and is also used to protect the power-delivery and control system from physical damage. The conformal coating is superimposed onto the electrostatics field generating circuits and the primary substrate as a means of protection. 1. An electrostatic carrier tray comprises ,a primary substrate;a plurality of electrostatic field generating circuits;a conformal coating;a structural backing;a power-delivery and control system;said primary substrate comprises a first surface and a second surface;each of said plurality of electrostatic field generating circuits comprises a first antenna, a specified gap, and a second antenna;said power-delivery and control system comprises an electronic oscillator, an inductor, a piezoelectric transformer, a series voltage multiplier, a power indication circuit, and a portable direct current (DC) power source; andsaid power indication circuit comprises a plurality of light emitting diodes (LED), a press button switch, and a display driver.2. The electrostatic carrier tray as claimed in comprises claim 1 ,said first surface and said second surface being positioned opposite to each other on said primary substrate;said plurality of electrostatic field generating circuits being positioned onto and across said first ...

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06-03-2014 дата публикации

Substrate fixing device and method for manufacturing the same

Номер: US20140063680A1
Принадлежит: Samsung Display Co Ltd

In a substrate fixing device and a method form manufacturing the substrate fixing device, the substrate fixing device includes a lower electrode, a dielectric layer and a plurality of protrusions. The dielectric layer is disposed on the lower electrode. The protrusions are spaced apart from each other, and are protruded from the dielectric layer. Each of the protrusions includes an insulating layer disposed on the dielectric layer, and an upper layer disposed on the insulating layer and contacting a substrate.

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06-03-2014 дата публикации

Electroadhesive System for Capturing Objects

Номер: US20140064905A1
Принадлежит: SRI INTERNATIONAL

A “sticky boom” system facilitates physical control of foreign objects, such as those in a zero-gravity environment. The electroadhesive system includes an electrostatic adhesion pad that electrostatically and detachably adheres to a separate foreign object, as well as a boom coupled to the pad. The pad includes electrode(s) adapted to produce an electrostatic force between the pad and the object that maintains the position of the pad relative to the object. The boom provides control for positioning the pad relative to the object and also for movement of the pad and object combination when they are electrostatically adhered together. A sensing component detects when the pad is adhered to the foreign object, and a control mechanism coupled to the boom allows for control of the pad and object at a remote distance. Multiple foreign objects can be adhered simultaneously. Control can include location and/or rotational movement or deceleration of objects. 1. An electroadhesive system for manipulating an object in a zero-gravity environment , the system comprising:an electrostatic adhesion pad configured to adhere electrostatically and detachably to a surface of the object within the zero-gravity environment, wherein said electrostatic adhesion pad includes one or more electrodes adapted to produce collectively an electrostatic force between the pad and the object that is suitable to maintain a current position of the pad relative to the object; andan end effector adapted to be coupled to a boom at a first boom location to provide control for positioning of the pad with respect to the object and also for movement of the pad and object combination when the pad and object are electrostatically adhered together.2. The electroadhesive system of claim 1 , wherein said electrostatic adhesion pad includes a deformable surface adapted for interfacing with a surface of the object claim 1 , and wherein at least a portion of said deformable surface moves closer to the object surface ...

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13-03-2014 дата публикации

Mass transfer tool

Номер: US20140071580A1
Принадлежит: Individual

Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool includes an articulating transfer head assembly, a carrier substrate holder, and an actuator assembly to adjust a spatial relationship between the articulating transfer head assembly and the carrier substrate holder. The articulating transfer head assembly may include an electrostatic voltage source connection and a substrate supporting an array of electrostatic transfer heads.

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13-03-2014 дата публикации

ELECTROSTATIC CHUCK

Номер: US20140071582A1
Автор: Anada Kazuki, WADA Takuma
Принадлежит: TOTO LTD.

To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, a temperature control plate provided on the second major surface side; and a heater provided between the electrode layer and the temperature control plate, and the first dielectric layer and the second dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 mm of not less than 20%. 1. An electrostatic chuck , comprising: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted , and a second major surface on a side opposite the first major surface , the ceramic dielectric substrate being a polycrystalline ceramic sintered body; andan electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate,a temperature control plate provided on the second major surface side; anda heater provided between the electrode layer and the temperature control plate,the ceramic dielectric substrate including a first dielectric layer between the electrode layer and the first major surface, and a second dielectric layer between the electrode layer and the second major surface, andthe first dielectric layer and the second dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 mm of not less than 20%.2. The electrostatic chuck according to claim 1 , ...

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03-04-2014 дата публикации

Charged particle beam apparatus and electrostatic chuck apparatus

Номер: US20140091232A1
Принадлежит: Hitachi High Technologies Corp

To improve an apparatus reliability by applying a voltage suitable to a situation, a charged-particle-beam apparatus 1 of the present invention includes: a sample stage 25; an electrostatic chuck 30; and an electrostatic-chuck controlling unit 13, and generates an image of a sample 24 by irradiating the sample 24 held on the sample stage 25 by the electrostatic chuck 30 with an electron beam 16. The electrostatic-chuck controlling unit 13, when the electrostatic chuck 30 holds the sample 24, applies a preset initial voltage to a chuck electrode of the electrostatic chuck 30; determines whether or not the sample 24 is normally clamped to the electrostatic chuck 30; and increases the voltage applied to the chuck electrode until determining that the sample 24 is clamped normally to the electrostatic chuck 30 if determining that the sample 24 is not clamped normally to the electrostatic chuck 30.

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07-01-2016 дата публикации

MASS TRANSFER TOOL

Номер: US20160001450A1
Принадлежит:

Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool includes an articulating transfer head assembly, a carrier substrate holder, and an actuator assembly to adjust a spatial relationship between the articulating transfer head assembly and the carrier substrate holder. The articulating transfer head assembly may include an electrostatic voltage source connection and a substrate supporting an array of electrostatic transfer heads. 1. A mass transfer tool comprising:an articulating transfer head assembly including an electrostatic voltage source connection, the electrostatic voltage source connection to electrically connect with an array of electrostatic transfer heads;a carrier substrate holder; andan actuator assembly to adjust a spatial relationship between the articulating transfer head assembly and the carrier substrate holder.2. The mass transfer tool of claim 1 , wherein the articulating transfer head assembly includes a mounting surface claim 1 , the mounting surface to hold a substrate supporting the array of electrostatic transfer heads against the electrostatic voltage source connection.3. The mass transfer tool of claim 2 , wherein the electrostatic voltage source connection includes a resilient conductor to press against the substrate and to electrically connect the substrate with the electrostatic voltage source connection.4. The mass transfer tool of claim 2 , wherein the actuator assembly includes a first flexure coupled with the articulating transfer head assembly to constrain movement of the articulating transfer head assembly in a direction orthogonal to the mounting surface.5. The mass transfer tool of claim 4 , wherein the actuator assembly includes a second flexure coupled with the articulating transfer head assembly claim 4 , and wherein the second flexure includes a second flexing surface oriented substantially parallel to a first flexing surface of the first flexure. ...

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07-01-2021 дата публикации

ELECTROSTATIC CLUTCH FOR ACTIVE CONTROL OF FREE HINGE

Номер: US20210004060A1
Принадлежит:

A hinge mechanism includes an electrostatic clutch for providing active control of a relative angle between two planar components. The hinge mechanism includes two conductive components on opposite sides of a dielectric layer; a relative angle detection mechanism usable to determine a relative angle between the two planar components; and a voltage controller that selectively applies voltage to at least one of the two conductive components when the detected angle between the two planar components satisfies a locking condition, the applied voltage creating an electrostatic force that restricts movement of the two conductive components and fixedly support the two planar components at the detected angle of separation. 1. A system comprising:a hinge mechanism for providing active control of a relative angle between two planar components, the hinge mechanism including:two conductive components on opposite sides of a dielectric layer;a relative angle detection mechanism usable to determine a relative angle between the two planar components; anda voltage controller that selectively applies a voltage to at least one of the two conductive components when the determined relative angle between the two planar components satisfies a predefined condition, the applied voltage creating an electrostatic force that restricts relative movement of the two conductive components and fixedly supports the two planar components at the determined relative angle of separation.2. The system of claim 1 , further comprising:angled pins that separate a first portion of a first planar electronic device from a second portion of the first planar electronic device, the first portion of the first planar electronic device being configured to rotate relative to the second portion of the first planar electronic device about a hinge axis, wherein rotation of the first portion about the hinge axis rotates the angled pins to forcibly shift a position of the two conductive components relative to one another.3 ...

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04-01-2018 дата публикации

ELECTROSTATIC CHUCK

Номер: US20180005860A1
Принадлежит: SHINKO ELECTRIC INDUSTRIES CO., LTD.

An electrostatic chuck includes a dielectric layer and a conductive layer located inside the dielectric layer. The dielectric layer includes an upper surface and a plurality of protrusions protruding from the upper surface. Each of the protrusions includes a top portion that serves as an attraction surface on which a substrate is attracted. The dielectric layer includes a plurality of first dielectric portions and a second dielectric portion. The second dielectric portion surrounds each of the first dielectric portions in the upper surface of the dielectric layer. At least some of the first dielectric portions include the protrusions and are bonded to the conductive layer. Each of the first dielectric portions is formed from a material that differs from that of the second dielectric portion. 1. An electrostatic chuck comprising:a dielectric layer including an upper surface and a plurality of protrusions protruding from the upper surface; anda conductive layer located inside the dielectric layer, wherein:each of the protrusions includes a top portion that serves as an attraction surface on which a substrate is attracted; a plurality of first dielectric portions, wherein at least some of the first dielectric portions include the protrusions and are bonded to the conductive layer, and', 'a second dielectric portion that surrounds each of the first dielectric portions in the upper surface of the dielectric layer; and, 'the dielectric layer includes'}each of the first dielectric portions is formed from a material that differs from that of the second dielectric portion.2. The electrostatic chuck according to claim 1 , wherein each of the first dielectric portions has a volume resistivity that is higher than that of the second dielectric portion.3. The electrostatic chuck according to claim 1 , wherein each of the first dielectric portions has a content percentage of a ceramics that is higher than that of the second dielectric portion.4. The electrostatic chuck according ...

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07-01-2021 дата публикации

ELECTROSTATIC CHUCK AND PLASMA PROCESSING APPARATUS

Номер: US20210005432A1
Принадлежит: TOKYO ELECTRON LIMITED

An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer. 1. An electrostatic chuck , comprising:a member;a ceramic main body provided on the member and having an upper surface and a lower surface;a first electrode provided in the ceramic main body to generate an electrostatic attractive force between a substrate mounted on the upper surface and the ceramic main body; anda second electrode and a third electrode forming a bipolar electrode, provided in the ceramic main body, and provided between the first electrode and the member to generate an electrostatic attractive force between the ceramic main body and the member.2. The electrostatic chuck according to claim 1 , wherein the second electrode and the third electrode are film-shaped electrodes and have comb-tooth shapes.3. The electrostatic chuck according to claim 2 , wherein the second electrode and the third electrode are provided so that comb teeth of the second electrode and comb teeth of the third electrode are alternately arranged along one direction.4. A plasma processing apparatus claim 2 , comprising:a chamber main body that provides a chamber;{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'an electrostatic chuck defined in , provided in the chamber;'}a radio frequency power supply that is electrically connected to the member of the electrostatic chuck;a first DC power supply electrically ...

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07-01-2021 дата публикации

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE SUPPORT

Номер: US20210005495A1
Принадлежит: TOKYO ELECTRON LIMITED

An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period. 1. A plasma processing apparatus comprising:a plasma processing chamber;an electrostatic chuck disposed in the plasma processing chamber;an annular member disposed on the electrostatic chuck to surround a substrate on the electrostatic chuck;first and second electrostatic electrodes disposed in the electrostatic chuck and disposed below the annular member;at least one DC power source connected to at least one of the first and second electrostatic electrodes; and during a first period, a potential of the first electrostatic electrode is substantially identical to a potential of the second electrostatic electrode, and', 'during a second period, the annular member is attracted to the electrostatic chuck by a potential difference between the first and second electrostatic electrodes., 'a controller configured to control the at least one DC power source so that'}2. The plasma processing apparatus of claim 1 , wherein each of the first and second electrostatic electrodes is at least partially overlapped with the annular member from a top view perspective of the annular member.3. The plasma processing apparatus of claim 2 , wherein the first electrostatic electrode is an inner annular electrode claim 2 , and the second electrostatic electrode ...

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07-01-2021 дата публикации

ELECTROADHESION DEVICE HOLDER

Номер: US20210006181A1
Автор: Koci Denis
Принадлежит:

Disclosed embodiments include an electroadhesion device holder for securing devices to foreign objects and other target surfaces. In various embodiments, the electroadhesion device holder may be incorporated into a device case that removably attaches to a device. The device case may include an integrated power supply for providing power to an electroadhesion device. In various embodiments electroadhesion device holder may be attached directly to a device such as a smartphone or camera. By providing a powered, portable mechanism for securing devices to foreign objects, the electroadhesion device holder may provide a better perspective for viewing a device screen and increase the field of view of a camera. 1. An electroadhesion device holder comprising:a device case configured to attach to a device; and a compliant film comprising one or more electrodes disposed in an insulating material, the insulating material including a chemical adhesive applied to at least one side of the insulating material;', 'a power supply connected to the one or more electrodes;', 'a sensor integrated into the electroadhesion device, the sensor configured to collect sensor data measuring one or more characteristics of a foreign object; and', 'a digital switch in communication with the sensor, the digital switch configured to control an adjustable voltage output of the one or more electrodes based on the sensor data,, 'an electroadhesion device integrated into the device case, the electroadhesion device includingwherein the adjustable voltage output of the one or more electrodes generates an electroadhesive force that secures the electroadhesion device to the foreign object.2. The electroadhesion device holder of claim 1 , wherein the digital switch controls the adjustable voltage output by operating a voltage converter to generate the adjustable voltage output by converting a low voltage from the power supply into the voltage output.3. The electroadhesion device holder of claim 2 , wherein ...

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07-01-2021 дата публикации

ELECTROSTATIC CHUCK DEVICE

Номер: US20210006182A1
Автор: Maeta Shinichi
Принадлежит: Sumitomo Osaka Cement Co., Ltd.

According to an electrostatic chuck device of the present invention, a cross-sectional shape of a base body in a thickness direction is a convex curved surface or a concave curved surface that gradually curves from a center of one main surface toward an outer periphery of the one main surface, an annular projection portion is provided on a peripheral portion on the one main surface of the base body so as to go around the peripheral portion, a plurality of convex projection portions are provided in a region surrounded by the annular projection portion, a difference between a height of a top surface of the convex projection portion positioned at a center of the one main surface and a height of an upper surface of the annular projection portion is 1 μm or higher and 30 μm or lower, the convex projection portion has the top surface in contact with the plate-shaped sample, a side surface, and an R surface continuously connecting the top surface and the side surface, and a ratio of a diameter of the top surface to a diameter of a bottom surface is 0.75 or higher, and an angle formed by the top surface and the side surface of the convex projection portion is 90° or higher and 160° or lower. 1. An electrostatic chuck device for electrostatically attracting a plate-shaped sample to one main surface of a base body thereof ,wherein a cross-sectional shape of the base body in a thickness direction is a convex curved surface or a concave curved surface that gradually curves from a center of the one main surface toward an outer periphery of the one main surface,an annular projection portion having a substantially square vertical cross-section is provided on a peripheral portion on the one main surface so as to go around the peripheral portion,a plurality of convex projection portions having a circular transverse cross-section or a polygonal transverse cross-section and a substantially square vertical cross-section are provided in a region surrounded by the annular projection ...

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07-01-2021 дата публикации

HOLDING DEVICE

Номер: US20210007183A1
Автор: MIWA Kaname
Принадлежит: NGK SPARK PLUG CO., LTD.

A holding device including a plate-shaped member, a base member, a plurality of heater electrodes disposed in the plate-shaped member, a plurality of electricity supply terminals, a bonding portion, and insulating members. The holding device holds an object on the surface of the plate-shaped member. The plurality of electricity supply terminals disposed in the holding device include N individual electricity supply terminals (N is an integer of 2 or more) electrically connected to respective N heater electrodes of the plurality of heater electrodes, and a common electricity supply terminal electrically connected to all the N heater electrodes. The N individual electricity supply terminals are received in one terminal hole in which the common electricity supply terminal is not received and are insulated from one another by an insulating member. The common electricity supply terminal is received in another terminal hole in which the individual electricity supply terminals are not received. 1. A holding device comprising:a plate-shaped member having an approximately flat first surface approximately orthogonal to a first direction and a second surface opposite to the first surface;a base member having a third surface and a fourth surface opposite to the third surface, the base member being disposed such that the third surface faces the second surface of the plate-shaped member, the base member having a plurality of first through holes extending from the third surface to the fourth surface;a plurality of heater electrodes disposed in the plate-shaped member and each formed from a resistance heating element;a plurality of electricity supply terminals electrically connected to the respective heater electrodes;a bonding portion disposed between the second surface of the plate-shaped member and the third surface of the base member to bond the plate-shaped member and the base member together, the bonding portion having a plurality of second through holes which communicate with ...

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14-01-2016 дата публикации

BONDED ASSEMBLY WITH INTEGRATED TEMPERATURE SENSING IN BOND LAYER

Номер: US20160011060A1
Принадлежит:

An assembly, for example an electrostatic chuck, is provided including a substrate, an electrostatic chuck, a heating plate, and a bond layer comprising a phosphorescent material. In one form, an optical sensor is disposed proximate the bond layer to detect a temperature of the bond layer in the field of view of the optical sensor. The phosphorescent material is illuminated and the subsequent decay is observed by the optical sensor. From this information, the temperature of the electrostatic chuck and substrate is determined and heating elements may be adjusted by a controller. 1. An assembly comprising:a first member;a second member disposed proximate the first member;a bond layer disposed between the first member and the second member, the bond layer securing the second member to the first member and comprising a phosphorescent material; andat least one optical sensor disposed proximate the bond layer to detect a temperature of the bond layer in a field of view of the optical sensor.2. The assembly according to claim 1 , wherein the first member is an electrostatic chuck and the second member is a heating plate for use in a support assembly in semiconductor processing.3. The assembly according to claim 2 , wherein at least one heating element is embedded within the heating plate.4. The assembly according to claim 2 , wherein at least one heating element is secured to the heating plate.5. The assembly according to or further comprising a controller that receives and processes signals from the optical sensor to determine temperature in the bond layer according a decay rate of the phosphorescent material and controls the at least one heating element accordingly.6. The assembly according to further comprising a tuning layer disposed proximate the heating plate.7. The assembly according to claim 1 , wherein the optical sensor is arranged to observe a lower side of the bond layer.8. The assembly according to claim 1 , further comprising an aperture extending through the ...

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10-01-2019 дата публикации

Electrostatic chuck, substrate processing apparatus, and method of manufacturing semiconductor device using the same

Номер: US20190013222A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

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10-01-2019 дата публикации

Electrostatic chuck

Номер: US20190013231A1
Принадлежит: TOTO LTD

According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing an object to be processed and a second major surface on an opposite side of the first major surface, and a base plate provided on a side of the second major surface and supporting the ceramic dielectric substrate. The base plate includes a first communicating passage passing a medium which adjusts a temperature of the object to be processed. The first communicating passage has an upper surface, a side surface, and a lower surface. A ratio of variation of a maximum height Sz in the upper surface to a height of the first communicating passage is not more than 1%.

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14-01-2021 дата публикации

CERAMIC SUBSTRATE AND SUSCEPTOR

Номер: US20210013081A1
Принадлежит: Sumitomo Osaka Cement Co., Ltd.

A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate. 1. A ceramic substrate which is made of a dielectric material including silicon carbide particles as a forming material ,wherein the number of the silicon carbide particles per unit area on a surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.2. The ceramic substrate according to claim 1 , wherein an average particle diameter of the silicon carbide particles is 0.2 μm or less.3. A susceptor comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the ceramic substrate according to ,'}wherein a surface of the ceramic substrate is a mounting surface on which a plate-shaped sample is mounted.4. An electrostatic chuck device comprising: [{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the ceramic substrate according to as a mounting plate,'}, 'a supporting plate,', 'an electrostatic attraction electrode provided between the ceramic substrate and the supporting plate, and', 'an insulating material layer that insulates surroundings of the electrostatic attraction electrode;, 'an electrostatic chuck part which includes'}a temperature adjusting base part; andan adhesive layer provided between the electrostatic chuck part and the temperature adjusting base part.5. The ceramic substrate according to claim 1 , wherein the dielectric material includesaluminum oxide particles or yttrium oxide particles having an average crystal grain size of 5 μm or less, as a main phase, andsilicon carbide particles having an average particle diameter of 0.2 μm or less, as a sub-phase.6. The ceramic substrate according to claim 1 , wherein the ceramic substrate is formed by a ...

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10-01-2019 дата публикации

ELECTRO-ADHESION GRIPPERS WITH FRACTAL ELECTRODES

Номер: US20190013746A1
Автор: Heinz Alexander
Принадлежит:

Electro-adhesion grippers for holding workpieces, are disclosed as including a first electrode and a second electrode that mutually engage, in a plan view of the electrodes, wherein, at least in a sub-region, the first electrode and the second electrode correspond to the border lines of a two-dimensional fractal space-filling curve of a second or higher order, and wherein the border lines result from enclosing a shape of the space-filling curve on both sides on an auxiliary grid that is offset with respect to a grid of the space-filling curve by half a grid spacing in each grid direction. 1. An electroadhesion gripper for holding workpieces , comprising:a first electrode and a second electrode that mutually engage, in a plan view of the electrodes,wherein, at least in a sub-region, the first electrode and the second electrode correspond to border lines of a two-dimensional fractal space-filling curve of a second or higher order, andwherein the border lines result from enclosing a shape of the space-filling curve on both sides on an auxiliary grid that is offset with respect to a grid of the space-filling curve by half a grid spacing in each grid direction.2. The electroadhesion gripper of claim 1 , wherein the first electrode and the second electrode correspond to a first part and a second part of the border lines of the space-filling curve claim 1 , the first part and the second part of the border lines being separated from one another in a region of a starting point and in a region of an end point of the space-filling curve.3. The electroadhesion gripper of claim 1 , wherein the space-filling curve is of a third or higher order.4. The electroadhesion gripper of claim 3 , wherein the space-filling curve is of a fourth or higher order.5. The electroadhesion gripper of claim 1 , wherein the space-filling curve is a Hilbert curve.6. The electroadhesion gripper of claim 1 , wherein the electroadhesion gripper has exactly two electrodes.7. The electroadhesion gripper of ...

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09-01-2020 дата публикации

SAMPLE HOLDER

Номер: US20200013659A1
Автор: HORI Youhei
Принадлежит: KYOCERA CORPORATION

A sample holder includes an insulating substrate including a ceramic material and having a sample holding surface on one main surface thereof, a heat-generating resistor located on another main surface of the insulating substrate, a metal member facing the another main surface, and an adhesive layer covering the another main surface, the adhesive layer including a first layer which is in contact with the insulating substrate, and a second layer which is in contact with the metal member and having an elastic modulus that is smaller than an elastic modulus of the first layer, the second layer including a layered portion positioned between the first layer and the metal member, and an annular portion surrounding the first layer. 1. A sample holder , comprising:an insulating substrate comprising a ceramic material and having a sample holding surface on one main surface thereof;a heat-generating resistor located on another main surface of the insulating substrate;a metal member facing the another main surface; and, a first layer which is in contact with the insulating substrate, and', 'a second layer which is in contact with the metal member and having an elastic modulus that is smaller than an elastic modulus of the first layer, the second layer comprising a layered portion positioned between the first layer and the metal member, and an annular portion surrounding the first layer., 'an adhesive layer covering the another main surface, the adhesive layer comprising'}2. The sample holder according to claim 1 , wherein the annular portion surrounds an entirety of the first layer and is in contact with the another main surface of the insulating substrate.3. The sample holder according to claim 1 , wherein a thermal conductivity of the first layer is smaller than a thermal conductivity of the second layer.4. The sample holder according to claim 2 , wherein the second layer further comprises a meniscus portion claim 2 , the meniscus portion extending along the another main ...

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19-01-2017 дата публикации

MASS TRANSFER TOOL

Номер: US20170015006A1
Принадлежит:

Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool includes an articulating transfer head assembly, a carrier substrate holder, and an actuator assembly to adjust a spatial relationship between the articulating transfer head assembly and the carrier substrate holder. The articulating transfer head assembly may include an electrostatic voltage source connection and a substrate supporting an array of electrostatic transfer heads. 1. A mass transfer tool comprising: a carrier substrate holder; and', 'a receiving substrate holder;, 'a lower assembly includinga stage located over the lower assembly;an articulating transfer head assembly mounted on the stage; andan actuator assembly to adjust a spatial relationship of the articulating transfer head assembly in at least six degrees of freedom.2. The mass transfer tool of claim 1 , wherein the stage is movable within an x-y plane.3. The mass transfer tool of claim 2 , wherein the lower assembly further comprises an upward-viewing imaging device.4. The mass transfer tool of claim 3 , wherein the upward-viewing imaging device is fixed in place relative to the carrier substrate holder.5. The mass transfer tool of claim 3 , wherein the upward-viewing imaging device comprises a digital camera.6. The mass transfer tool of claim 1 , further comprising a first position sensor fixed relative to the transfer head assembly to detect a position of the carrier substrate holder.7. The mass transfer tool of claim 6 , further comprising a second position sensor fixed relative to the carrier substrate holder to detect a position of the articulating transfer head assembly.8. The mass transfer tool of claim 1 , further comprising a flexure to dampen force when contacting the articulating transfer head assembly with a workpiece.9. The mass transfer tool of claim 8 , further comprising a position sensor fixed relative to the transfer head assembly to sense a ...

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22-01-2015 дата публикации

Carrier device and ceramic member

Номер: US20150021944A1
Принадлежит: NGK Spark Plug Co Ltd

A ceramic member, in a carrier device, includes: a plurality of ceramic layers that have insulating properties and are integrally sintered; a clamping electrode formed on a first ceramic layer among the plurality of ceramic layers and inside of the plurality of ceramic layers, and configured to attract a dielectric material by electrostatic force; a power feed port configured to receive a supply of electric power to the clamping electrode from outside of the ceramic member; a land formed on a second ceramic layer, which is different from the first ceramic layer among the plurality of ceramic layers, and configured to receive electric power through the power feed port; and a via arranged to pass through at least one of the plurality of ceramic layers and provided as a conductive material to electrically connect the clamping electrode with the land.

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17-04-2014 дата публикации

Electrostatic chuck

Номер: US20140104743A1
Автор: Seong-Su Park
Принадлежит: Samsung Display Co Ltd

Provided is an electrostatic chuck capable of minimizing short circuits of electrodes due to scratches generated on a surface of the electrostatic chuck, and achieving stable absorption.

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17-04-2014 дата публикации

Conformable Electroadhesive Gripping System

Номер: US20140104744A1
Принадлежит: SRI INTERNATIONAL

An electroadhesive surface can include electrodes that are configured to induce an electrostatic attraction with nearby objects upon application of voltage to the electrodes. Systems described herein may also employ a load-bearing frame that is coupled to an electroadhesive gripping surface via an array of height-adjustable pins. Adjusting the pins changes the shape of the gripping surface, and may be used to conform to objects pressed against the gripping surface. Objects pressed against the gripping surface may cause one or more of the pins to retract by sliding within respective channels so as to cause the gripping surface to conform to the object. Some examples further include pin-locking mechanisms configured to secure the position of the pins within their respective channels and thereby fix the shape of the gripping surface after conforming to the object. 1. A system comprising:an electroadhesive surface associated with one or more electrodes;a load-bearing frame including a plurality of pins passing through a plurality of corresponding channels, wherein the pins are coupled to the electroadhesive surface so as to couple the load-bearing frame to the electroadhesive surface, and wherein the pins are configured to slide within their corresponding channels to thereby adjust a shape of the electroadhesive surface; anda power supply configured to apply a voltage to the one or more electrodes associated with the electroadhesive surface to thereby cause the electroadhesive surface to adhere to an item situated proximate to the electroadhesive surface.2. The system according to claim 1 , wherein each given pin of the plurality of pins includes a first end coupled to the electroadhesive surface and a second end having a retaining cuff configured to mechanically interfere with a portion of the load-bearing frame such that the interference defines a maximum extension of the given pin from its corresponding channel.3. The system according to claim 2 , further comprising ...

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17-01-2019 дата публикации

ELECTROSTATIC CHUCK DEVICE

Номер: US20190019714A1
Принадлежит:

An electrostatic chuck device includes: an electrostatic chuck part which incorporates an internal electrode for electrostatic attraction and has a placing surface on which a plate-like sample is placed; a base part which cools the electrostatic chuck part; and an adhesion layer which bonds the electrostatic chuck part and the base part to integrate the parts together, in which a first through-hole is provided in the electrostatic chuck part, a second through-hole that communicates with the first through-hole is provided in the base part, a tubular insulator is fixed in the second through-hole, an annular sealing member is sandwiched between the electrostatic chuck part and a distal end surface of the insulator, wherein the distal end surface is located on the electrostatic chuck part side of the insulator, and a tubular insulating wall member is located at the inner side of the sealing member in the radial direction. 1. An electrostatic chuck device comprising:an electrostatic chuck part which incorporates an internal electrode for electrostatic attraction and has a placing surface on which a plate-like sample is placed;a base part which cools the electrostatic chuck part; andan adhesion layer which bonds the electrostatic chuck part and the base part to integrate the parts together,wherein a first through-hole is provided in the electrostatic chuck part,a second through-hole that communicates with the first through-hole is provided in the base part,a tubular insulator is fixed in the second through-hole,an annular sealing member is sandwiched between the electrostatic chuck part and a distal end surface of the insulator, wherein the distal end surface is located on the electrostatic chuck part side of the insulator, anda tubular insulating wall member is located at the inner side of the sealing member in the radial direction.2. The electrostatic chuck device according to claim 1 , wherein the insulating wall member is integrally formed on the distal end surface of ...

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23-01-2020 дата публикации

SHAPE COMPLIANT ELECTROADHESIVE GRIPPER

Номер: US20200023527A1
Принадлежит:

Disclosed herein is a shape compliant electroadhesive gripper for picking up an atypical object. The shape compliant electroadhesive gripper comprises a body, and an electroadhesive module disposed on the body and including an electrorheological elastomer, wherein, when a voltage is not applied, a shape of the electroadhesive module is deformed according to a shape of an external object coming into contact with the electroadhesive module, and when the voltage is applied, rigidity of the electrorheological elastomer is increased to maintain the shape of the electroadhesive module, and when the voltage is applied to the electroadhesive module, electroadhesion is made due to an electrostatic force generated between the electrorheological elastomer and the adjacent external object. 1. A shape compliant electroadhesive gripper for picking up an atypical object , the shape compliant electroadhesive gripper comprising:a body; andan electroadhesive module disposed on the body and comprising an electrorheological elastomer,wherein, when a voltage is not applied, a shape of the electroadhesive module is deformed according to a shape of an external object coining into contact with the electroadhesive module, and when the voltage is applied, rigidity of the electrorheological elastomer is increased to maintain the shape of the electroadhesive module, andwhen the voltage is applied to the electroadhesive module, electroadhesion is made due to an electrostatic force generated between the electrorheological elastomer and the external object adjacent to the electrorheological elastomer.2. The shape compliant electroadhesive gripper of claim 1 , wherein the electrorheological elastomer of the electroadhesive module comprises a dielectric material responsive to an electric field claim 1 , and the dielectric material contains an inorganic material.3. The shape compliant electroadhesive gripper of claim 2 , wherein the inorganic material contained in the dielectric material comprises ...

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28-01-2016 дата публикации

SAMPLE LOADING DEVICE FOR ELECTROSTATIC LEVITATION APPARATUS

Номер: US20160028330A1
Принадлежит:

Sample loading device and electrostatic levitation apparatus. The electrostatic levitation apparatus includes a sample storage part including a rod-shaped sample standby part having an external diameter of a first diameter and a rod-shaped sample loading part having an external diameter of a second diameter and a sample cover part covering the sample standby part. The sample storage part has a loading bar inserting hole formed in its center. The loading bar inserting hole is formed through the sample standby part and is formed successively through a portion of the sample loading part. The sample standby part has sample storage vertical through-holes. The sample loading part has a single sample transfer vertical through-hole. The sample transfer vertical through-hole is formed on a surface where the sample storage vertical through-hole is viewed, penetrates the sample loading part, and is connected to the loading bar inserting hole. 1. A sample loading device comprising:a sample storage part including a cylindrical sample standby part having an external diameter of a first diameter and a cylindrical sample loading part having an external diameter of a second diameter; anda cylindrical sample cover part having an external diameter of the second diameter and covering the sample standby part,wherein the sample storage part has a loading bar inserting hole that is formed in its center in a lengthwise direction,the loading bar inserting hole is formed through the sample standby part and is formed successively through a portion of the sample loading part,the sample standby part has sample storage vertical through-holes that are formed at regular intervals in a lengthwise direction and penetrate in a direction perpendicular to the lengthwise direction,the sample loading part has a single sample transfer vertical through-hole, andthe sample transfer vertical through-hole is formed on a surface where the sample storage vertical through-hole is viewed, penetrates the sample ...

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28-01-2021 дата публикации

System and method for electrostatically chucking a substrate to a carrier

Номер: US20210028726A1
Принадлежит: Applied Materials Inc

A chucking station comprises a chuck, a power supply, and one or more pumping elements. The chuck comprises a plurality of first vacuum ports configured to interface with a surface of a substrate and a plurality of second vacuum ports configured to interface with a surface of a carrier. The chuck further comprises a first electrical pin configured to be in electrical communication with a first electrode of the carrier, and a second electrical pin configured to be in electrical communication with a second electrode of the carrier. The power supply is configured to apply a chucking voltage and a de-chucking voltage to the first and second electrical pins. The one or more pumping elements is coupled to the first and second vacuum ports and configured to generate a vacuum between the substrate and the chuck and a vacuum between the carrier and the chuck.

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01-05-2014 дата публикации

ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING APPARATUS

Номер: US20140116622A1
Автор: LEE Won Haeng
Принадлежит:

Provided is a substrate processing apparatus using plasma. The apparatus includes a chamber having a processing space therein, a substrate supporting assembly located in the chamber and including an electrostatic chuck supporting a substrate, a gas supplying unit supplying gases into the chamber, and a power source applying power for generating plasma from the gases supplied into the chamber. The electrostatic chuck includes a dielectric plate including an electrode adsorbing the substrate by using an electrostatic force, a body located below the dielectric plate and including a metallic plate to which a high frequency power source is connected, and a bonding unit located between the dielectric plate and the body and fastening the dielectric plate and the body. The bonding unit is formed as a multilayer structure. 1. A substrate processing apparatus comprising:a chamber having a processing space therein;a substrate supporting assembly located in the chamber and comprising an electrostatic chuck supporting a substrate;a gas supplying unit supplying gases into the chamber; anda power source applying power for generating plasma from the gases supplied into the chamber,wherein the electrostatic chuck comprises:a dielectric plate comprising an electrode adsorbing the substrate by using an electrostatic force;a body located below the dielectric plate and comprising a metallic plate to which a high frequency power source is connected; anda bonding unit located between the dielectric plate and the body and fastening the dielectric plate and the body,wherein the bonding unit is formed as a multilayer structure.2. The apparatus of claim 1 , wherein the multilayer structure comprises an acryl layer and a silicon layer.3. The apparatus of claim 2 , wherein the silicon layer is located above the acryl layer.4. The apparatus of claim 3 , wherein the multilayer structure further comprises a bonding intermediate layer provided between the silicon layer and the acryl layer to allow ...

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04-02-2016 дата публикации

Method of forming a composite substrate for layered heaters

Номер: US20160035602A1
Принадлежит: Watlow Electric Manufacturing Co

A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater having at least one functional layer to the heater substrate after the heater substrate is secured to the application substrate. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. The material of the functional layer is not capable of withstanding the elevated temperature of the thermal securing step.

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04-02-2016 дата публикации

CARRIER WAFER, METHOD FOR HOLDING A FLEXIBLE SUBSTRATE AND METHOD FOR THE MANUFACTURE OF A CARRIER WAFER

Номер: US20160035611A1
Принадлежит:

Carrier wafers are used to hold thin and ultra-thin substrates such as semiconductor components, for example. The carrier wafer of the invention has a plurality of electrodes insulated on all sides (floating electrodes). This plurality of floating electrodes, but at least 50 floating electrodes, are located next to one another with reference to the plane of the first surface of the carrier wafer. Each of these floating electrodes can be charged, for example by means of Fowler-Nordheim tunnels or by the injection of hot charge carriers, in particular of hot electrons or hot holes. Also provided are a method for holding a flexible substrate by means of a carrier wafer of this type and a method for the manufacture of a carrier wafer of this type. 1. A carrier wafer with a first flat surface for the electrostatic holding of a flexible substrate , comprising:a plurality of at least 50 floating electrodes insulated on all sides electrically insulated by means of one or more electrical insulation layers and located next to each other with respect to the plane of the first, flat surfaces, wherein for the floating electrodes at least one electrical line is provided as a feeder electrode and at least one electrical line is provided as a counter-electrode for the charging of the floating electrodes by means of Fowler-Nordheim tunnels or by the injection of hot charge carriers.2. The carrier wafer of claim 1 , wherein for each of the floating electrodes at least one of the insulation layers has an area located next to the electrode for the charging of the electrode.3. The carrier wafer of claim 1 , wherein at least one claim 1 , some or all of the areas for charging have a lower thickness than the insulation layer that is next to it and the surrounding areas.4. The carrier wafer of claim 2 , wherein at least one claim 2 , some or all of the areas for charging are connected with a structure for the generation of hot charge carriers or are located next to it.5. The carrier wafer ...

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04-02-2016 дата публикации

ELECTROSTATIC CHUCK DEVICE

Номер: US20160036355A1
Принадлежит:

Provided is an electrostatic chuck device in which the attachment of particles to the rear surface of a plate-like specimen can be further suppressed by suppressing the generation source of the particles and, furthermore, an effect of cooling the plate-like specimen using a cooling gas can be improved. The electrostatic chuck device is formed by including an electrostatic chuck portion in which an upper surface () of a ceramic plate-like body () is used as a placement surface on which a wafer is placed and an electrostatic adsorption electrode is provided inside the ceramic plate-like body () or on the rear surface thereof, multiple protrusions () are formed on the upper surface (), and multiple fine protrusions () are formed in regions () excluding the multiple protrusions () in the upper surface (). 1. An electrostatic chuck device formed by including an electrostatic chuck portion in which a first main surface of a ceramic plate-like body is used as a placement surface on which a plate-like specimen is placed and an electrostatic adsorption electrode is provided inside the ceramic plate-like body or on a second main surface thereof ,wherein multiple protrusions are formed on the first main surface, andmultiple fine protrusions or multiple fine recesses are formed in regions excluding the multiple protrusions on the first main surface.2. The electrostatic chuck device according to claim 1 , wherein the total occupancy area of the multiple fine protrusions or the multiple fine recesses in the regions excluding the multiple protrusions on the first main surface is in a range of 1% or more and 40% or less of an area of the regions.3. The electrostatic chuck device according to claim 1 , wherein the height of the fine protrusion or the depth of the fine recess is in a range of 10% or more and 100% or less of the height of the protrusion.4. The electrostatic chuck device according to claim 1 , wherein multiple second fine protrusions are formed on individual top end ...

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30-01-2020 дата публикации

ELECTROSTATIC CHUCK

Номер: US20200035538A1
Принадлежит:

According to one embodiment, an electrostatic chuck includes a ceramic dielectric, a base plate, a first electrode layer, and a second electrode layer. The ceramic dielectric substrate has a first major surface and a second major surface. The first electrode layer is provided between the first major surface and the second major surface. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer has a first surface and a second surface. A distance between the first surface and the first major surface is constant. A distance between the second surface and the first surface at an end portion of the first electrode layer is shorter than a distance between the second surface and the first surface at a central portion of the first electrode layer. 1. An electrostatic chuck , comprising:a ceramic dielectric substrate having a first major surface and a second major surface, an object to be chucked being placed on the first major surface, the second major surface being on a side opposite to the first major surface;a base plate supporting the ceramic dielectric substrate;at least one first electrode layer provided inside the ceramic dielectric substrate and connected to a high frequency power supply; andat least one second electrode layer provided inside the ceramic dielectric substrate and connected to a chucking power supply,the first electrode layer being provided between the first major surface and the second major surface in a Z-axis direction, the Z-axis direction being from the base plate toward the ceramic dielectric substrate,the second electrode layer being provided between the first electrode layer and the first major surface in the Z-axis direction,the first electrode layer having a first surface and a second surface and being supplied with power from the second surface side, the first surface being on the first major surface side, the second surface being on a side opposite to the first surface, ...

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04-02-2021 дата публикации

SEMICONDUCTOR SUBSTRATE SUPPORTS WITH IMPROVED HIGH TEMPERATURE CHUCKING

Номер: US20210035843A1
Принадлежит: Applied Materials, Inc.

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V. 1. A substrate support assembly comprising:an electrostatic chuck body defining a substrate support surface;a support stem coupled with the electrostatic chuck body;a heater embedded within the electrostatic chuck body; andan electrode embedded within the electrostatic chuck body between the heater and the substrate support surface, wherein the substrate support assembly is characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.2. The substrate support assembly of claim 1 , wherein the electrostatic chuck body defines a recessed pocket along the substrate support surface encompassing a central region of the electrostatic chuck body.3. The substrate support assembly of claim 2 , wherein the substrate support surface defines a recessed ledge extending radially inward from an outer radial edge of the recessed pocket.4. The substrate support assembly of claim 3 , wherein the electrostatic chuck body defines a plurality of protrusions extending from the substrate support surface within the recessed pocket.5. The substrate support assembly of claim 4 , wherein a distance between a radially outermost protrusion and in inner radial edge of the recessed ledge is maintained below or about 3 mm.6. ...

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08-02-2018 дата публикации

SUBSTRATE FIXING DEVICE

Номер: US20180040497A1
Принадлежит:

A substrate fixing device includes a baseplate, an electrostatic chuck, and an insulating layer interposed between the baseplate and the electrostatic chuck. The insulating layer includes a heating element formed of a first material and a wiring line connected in series to the heating element. The wiring line includes a first conductive layer formed of the first material and a second conductive layer joined onto the first conductive layer. The second conductive layer is formed of a second material having a resistivity lower than the resistivity of the first material. 1. A substrate fixing device , comprising:a baseplate;an electrostatic chuck; andan insulating layer interposed between the baseplate and the electrostatic chuck, a heating element formed of a first material; and', 'a wiring line connected in series to the heating element,', a first conductive layer formed of the first material; and', 'a second conductive layer joined onto the first conductive layer, the second conductive layer being formed of a second material having a resistivity lower than a resistivity of the first material., 'the wiring line including'}], 'the insulating layer including'}2. The substrate fixing device as claimed in claim 1 , further comprising:a power feed terminal configured to supply voltage to the heating element, the power feed terminal being connected to the heating element through the wiring line.3. The substrate fixing device as claimed in claim 2 , whereinthe heating element is independently disposed in each of a plurality of zones including a first zone and a second zone,the wiring line is disposed across the first zone and the second zone,the power feed terminal is disposed in the second zone, andthe heating element disposed in the first zone is connected to the power feed terminal through the wiring line.4. The substrate fixing device as claimed in claim 1 , wherein a layer thickness of the first conductive layer is smaller than or equal to a layer thickness of the ...

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15-02-2018 дата публикации

APPARATUS AND METHOD TO COAT GLASS SUBSTRATES WITH ELECTROSTATIC CHUCK AND VAN DER WAALS FORCES

Номер: US20180044784A1
Принадлежит:

A chucking apparatus and methods for coating a glass substrate using a vacuum deposition process are disclosed. In one or more embodiments, the chucking apparatus includes an ESC (ESC), a carrier disposed on the ESC, wherein the carrier comprises a first surface adjacent to the ESC and an opposing second surface for forming a Van der Waals bond with a third surface of a glass substrate, without application of a mechanical force on a fourth surface of the glass substrate opposing the third surface. In one or more embodiments, the method includes disposing a carrier and a glass substrate on an ESC, such that the carrier is between the glass substrate and the ESC to form a chucking assembly, forming a Van der Waals bond between the carrier and the glass substrate, and vacuum depositing a coating on the glass substrate. 1. A chucking apparatus for coating a glass substrate using a vacuum deposition process , the apparatus comprising:an electrostatic chuck (ESC);a carrier disposed on the ESC, wherein the carrier comprises a first surface adjacent to the ESC and an opposing second surface for forming a Van der Waals bond with a third surface of a glass substrate, without application of a mechanical force on a fourth surface of the glass substrate opposing the third surface.2. The apparatus of claim 1 , wherein the Van der Waals bond is formed without application of a mechanical force on the glass substrate.3. The apparatus of claim 1 , wherein the ESC is adapted to apply a clamping force in a range from about 3 gf/cmand 10 gf/cm.4. The chucking apparatus of claim 1 , wherein the glass substrate comprises a first coefficient of thermal expansion and the carrier comprises a second coefficient of thermal expansion that is within 10% of the first coefficient of thermal expansion.5. The chucking apparatus of claim 4 , wherein the first coefficient of thermal expansion and the second coefficient of thermal expansion are substantially equal.6. A method of vacuum depositing a ...

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18-02-2016 дата публикации

Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

Номер: US20160049323A1
Принадлежит: Applied Materials Inc

Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×10 7 ohm-cm to about 1×10 15 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

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03-03-2022 дата публикации

Bonding structure of e chuck to aluminum base configuration

Номер: US20220063236A1
Принадлежит: Applied Materials Inc

The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.

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16-02-2017 дата публикации

Electrostatic chuck with electrostatic fluid seal for containing backside gas

Номер: US20170047867A1
Принадлежит: Applied Materials Inc

In one embodiment, an electrostatic chuck is provided and includes a backing substrate, and a puck substrate disposed on the backing substrate, the puck substrate comprising a plurality of central chucking modules surrounded by a perimeter chucking module, the perimeter chucking module having a first electrode and a second electrode that are parallel to each other and substantially parallel to sides of the puck substrate.

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14-02-2019 дата публикации

ELECTROADHESIVE DEVICE, SYSTEM AND METHOD FOR GRIPPING

Номер: US20190047157A1
Принадлежит:

A device for electroadhesion and conversion of electrical energy into mechanical energy, for example electrostatic actuation, is provided, including a soft polymeric dielectric support having at least two sets of overlapping electrodes patterned respectively on the upper surface and bottom surface of the polymeric support, the electrodes of the two sets can be electrically activated through a power supply for providing voltage change suitable for electroadhesion, electrostatic actuation or both at the same time. 1. A device for converting between electrical energy and mechanical energy and for providing electrostatic adhesion , comprising:a soft dielectric polymeric support having an upper surface and a bottom surface;a first set of at least two adjacent electrodes operatively disposed on the upper surface of a first active area of the polymeric support; anda second set of at least two adjacent electrodes operatively disposed on the bottom surface of a first active area of the polymeric support,wherein the first set of electrodes and the second set of electrodes are overlapped along an axis.2. The device of claim 1 , further comprising a first deformable insulating layer operatively connected on the first set of electrodes and a second deformable insulating layer operatively connected below the second set of electrodes.3. The device of claim 1 , wherein the polymeric support is arranged in a manner which causes at least the first active area to deflect in response to a suitable applied voltage.4. The device of claim 1 , wherein the polymeric support is uniaxially and elastically pre-strained on at least the first active area.5. The device of claim 1 , wherein the electrodes in each set are parallel among them.6. The device of claim 1 , wherein the electrodes in each set are evenly disposed.7. The device of claim 1 , wherein the electrodes are compliant.8. The device of claim 1 , further comprising a circuitry configured to provide a voltage between adjacent ...

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25-02-2016 дата публикации

Conformable electroadhesive holding device

Номер: US20160056734A1
Принадлежит: GM GLOBAL TECHNOLOGY OPERATIONS LLC

A gripping device is described, and includes a holder including a base and a conformable jamming element having an electroadhesive element on a surface thereof and a controllable voltage source that is electrically connected to the electroadhesive element.

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22-02-2018 дата публикации

BIPOLAR ELECTROSTATIC CHUCK AND METHOD FOR USING THE SAME

Номер: US20180053676A1
Принадлежит:

Described herein are an electrostatic chuck and method for using the same. In one example, an electrostatic chuck is provided that includes a plurality of independently replaceable electrostatic chuck assemblies mounted in an array across a chuck body. The electrostatic chuck assemblies define a substrate support surface suitable for supporting a large area substrate. At least a first electrostatic chuck assembly of the plurality of electrostatic chuck assemblies is operable independent of an operation of a second electrostatic chuck assembly of the plurality of electrostatic chuck assemblies. In yet another example, a method for chucking a substrate is provided. 1. An electrostatic chuck comprising:a chuck body; anda plurality of independently replaceable electrostatic chuck assemblies mounted in an array across the chuck body to define a substrate support surface suitable for supporting a large area substrate, at least a first electrostatic chuck assembly of the plurality of electrostatic chuck assemblies operable independent of an operation of a second electrostatic chuck assembly of the plurality of electrostatic chuck assemblies.2. The electrostatic chuck of claim 1 , wherein each electrostatic chuck assembly has at least two electrodes arranged in a bi-polar configuration.3. The electrostatic chuck of claim 2 , wherein the two electrodes comprise interleaving electrodes fingers.4. The electrostatic chuck of claim 1 , wherein the first electrostatic chuck assembly is laterally spaced apart from the second electrostatic chuck assembly to form a gap therebetween.5. The electrostatic chuck of claim 4 , wherein the chuck body comprises:a port aligned with and configured to flow gas into the gap defined between the first and second electrostatic chuck assemblies.6. The electrostatic chuck of claim 1 , wherein the plurality of electrostatic chuck assemblies have gaps defined therebetween configured to flow gas across the substrate support surface.7. The electrostatic ...

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25-02-2021 дата публикации

ELECTROSTATIC CHUCK AND MANUFACTURING METHOD THEREFOR

Номер: US20210057257A1
Автор: CHO Saeng Hyun
Принадлежит:

The present invention relates to a method for manufacturing an electrostatic chuck comprising: a base member of a metal material; and a dielectric layer, formed on an upper surface of the base member, including an electrode layer to the inside of which a DC power is applied. According to the present invention, the dielectric layer is formed of a ceramic material by using at least one selected from among a plasma spraying method and a sol-gel method, and thus can be provided with low porosity to increase in lifespan, and with high permittivity to increase in adhesion force to a substrate. 1. An electrostatic chuck of a substrate processing apparatus that performs substrate processing in a state in which a mask (M) is in close contact with a top surface of a substrate (S) that is fixedly attracted to the electrostatic chuck , the electrostatic chuck comprising:a base member made of a metal; anda dielectric layer disposed on a top surface of the base member and having therein an electrode layer, to which DC power is applied, wherein an edge support portion configured to support a bottom surface of an edge of the substrate (S) is disposed on a top surface of the dielectric layer.2. The electrostatic chuck of claim 1 , further comprising a magnet configured to bring the mask (M) into close contact with a top surface of the substrate (S) by a magnetic force.3. The electrostatic chuck of claim 1 , wherein the mask (M) comprises a mask sheet having at least one opening formed in a preset pattern claim 1 , and an outer frame configured to support an edge of the mask sheet claim 1 , and the magnet brings the outer frame into close contact with the top surface of the substrate (S) by a magnetic force.4. The electrostatic chuck of claim 1 , wherein a carrier frame is additionally coupled to an edge of the electrostatic chuck so as to form a carrier that transfers the substrate (S) in a substrate processing system that performs substrate processing in a state in which the ...

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23-02-2017 дата публикации

TRANSFER HEAD ARRAY

Номер: US20170054390A1
Принадлежит:

A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer. 1. A transfer head array , comprising:a base substrate;an interlayer isolation layer disposed on the base substrate, wherein the interlayer isolation layer has a flat top surface facing away from the base substrate;a plurality of transfer heads arranged on the interlayer isolation layer; andat least one shielding layer disposed in the interlayer isolation layer.2. The transfer head array of claim 1 , wherein the shielding layer is positioned to shield at least a superfluous electric field from interfering with the transfer heads.3. The transfer head array of claim 1 , wherein at least one of the transfer heads has a picking surface for picking up at least one device; andwherein a vertical projection of the shielding layer on the base substrate at least partially overlaps with an area complementary to a vertical projection of the picking surface on the base substrate.4. The transfer head array of claim 1 , further comprising:a shielding electric potential provider configured to provide the shielding layer with an electric potential.5. The transfer head array of claim 4 , wherein the shielding electric potential provider comprises an alternating current (AC) power source.6. The transfer head array of claim 4 , wherein the shielding electric potential provider comprises a direct current (DC) power source.7. The transfer head array of claim 1 , wherein the shielding layer is made of a conductive material.8. The transfer head array of claim 1 , wherein the interlayer isolation layer has substantially the same thickness across at least adjacent two ...

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15-05-2014 дата публикации

ADDITIONAL FORCE AUGMENTED ELECTROADHESION

Номер: US20140133062A1
Принадлежит: SRI INTERNATIONAL

An electrostatic device or system includes electrode(s) adapted to produce an electrostatic attraction force and a base surface adapted to facilitate the application of the electrostatic attraction force and also a physical attraction force separate therefrom. The electrostatic and physical attraction forces can maintain a position of the electrostatic device relative to a foreign object via electroadhesion and/or via an additional manner that is separate from the electroadhesion. The physical attraction force can be a vacuum, van der Waals, and/or adhesive force, can be applied at less than all locations across the base surface, and may involve a one-time permanent attachment. The base surface can include a deformable surface portion that moves closer to the foreign object when the electrostatic or physical attraction force is applied. The physical attraction force can be sufficient to adhere the device to the object when the electrostatic attraction force is removed. 1. An electrostatic device , comprising:one or more electrodes adapted to produce collectively an electrostatic attraction force between the electrostatic device and a foreign object, wherein the electrostatic attraction force is suitable to facilitate maintaining a given position of the electrostatic device relative to the foreign object; anda base surface configured to interact with the foreign object, wherein the base surface facilitates the application of the electrostatic attraction force and also a separate physical attraction force between the electrostatic device and the foreign object, whereby the given position of the electrostatic device relative to the foreign object is maintained due to both the electrostatic attraction force and the separate physical attraction force.2. The electrostatic device of claim 1 , wherein the physical attraction force involves the use of a vacuum.3. The electrostatic device of claim 2 , wherein said base surface comprises a low durometer coating.4. The ...

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05-03-2015 дата публикации

Barrier Layer For Electrostatic Chucks

Номер: US20150062772A1

An electrostatic chuck for implanting ions at high temperatures is disclosed. The electrostatic chuck includes an insulating base, with electrically conductive electrodes disposed thereon. A dielectric top layer is disposed on the electrodes. A barrier layer is disposed on the dielectric top layer so as to be between the dielectric top layer and the workpiece. This barrier layer serves to inhibit the migration of particles from the dielectric top layer to the workpiece, which is clamped on the chuck. In some embodiments, a protective layer is applied on top of the barrier layer to prevent abrasion.

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02-03-2017 дата публикации

DIELECTRIC MATERIAL AND ELECTROSTATIC CHUCKING DEVICE

Номер: US20170057875A1
Принадлежит:

A dielectric material includes a composite sintered body in which conductive particles are dispersed in an insulating material, in which a dielectric constant at a frequency of 40 Hz is 10 or higher, and a difference between a maximum dielectric loss value and a minimum dielectric loss value at a frequency of 1 MHz in a surface of the composite sintered body is 0.002 or less. 1. A dielectric material , whereinthe dielectric material is a composite sintered body in which conductive particles are dispersed in an insulating material,a dielectric constant of the dielectric material at a frequency of 40 Hz is 10 or higher, anda difference between a maximum value and a minimum value of dielectric loss of the dielectric material wherein the dielectric loss is measured at a frequency of 1 MHz on the surface of the composite sintered body is 0.002 or less.2. The dielectric material according to claim 1 ,{'sup': '13', 'wherein a volume resistivity at 20° C. of the dielectric material is 10Ω·cm or higher, and'}a withstand voltage at 20° C. of the dielectric material is 5 kV/mm or higher.3. The dielectric material according to claim 1 ,{'sup': '13', 'wherein a volume resistivity at 120° C. of the dielectric material is 10Ω·cm or higher, and'}a withstand voltage at 20° C. of the dielectric material is 5 kV/mm or higher.4. The dielectric material according to claim 1 ,wherein a thermal conductivity of the dielectric material is 20 W/m·K or higher.5. The dielectric material according to claim 1 ,wherein dielectric loss at a frequency of 40 Hz of the dielectric material is 0.01 or higher and 0.05 or lower.6. An electrostatic chuck device comprisinga base having a main surface on which a plate-like sample is electrostatically attracted,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the base is formed of the dielectric material according to .'}7. The dielectric material according to claim 1 ,wherein the insulating material is an insulating ceramic.8. The dielectric ...

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10-03-2022 дата публикации

HANDLING AND PROCESSING DOUBLE-SIDED DEVICES ON FRAGILE SUBSTRATES

Номер: US20220077794A1
Принадлежит:

Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface. 1. An optical device fabrication method , comprising: 'disposing the first surface on a plurality of projections coupled to a body of the substrate support assembly to form pockets defined by adjacent projections, the one or more devices disposed on the first surface and the body;', 'retaining a first surface of an optical device substrate on a substrate support assembly, the first surface of the optical device substrate having one or more devices disposed thereon, the retaining the first surface on the substrate support assembly comprisingforcing a stamp to contact an imprint material disposed on a second surface of the optical device substrate opposing the first surface; andreleasing the stamp from portions of the second surface and pressurizing the pockets corresponding to the portions of the second surface, the pressurizing the pockets comprising flowing gas from a gas source to the pockets through pocket conduits in fluid communication with the gas source and the pockets.2. The optical device fabrication method of claim 1 , further comprising providing power to a chucking electrode disposed in each of the plurality of projections to retain the first surface of the optical device substrate ...

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29-05-2014 дата публикации

MOUNTING TABLE STRUCTURE AND METHOD OF HOLDING FOCUS RING

Номер: US20140146434A1
Автор: Uchida Yohei
Принадлежит: TOKYO ELECTRON LIMITED

A mounting table structure includes a sheet, having thermal conductivity, provided between a focus ring and a base member; a pressing member having a pressing surface that presses the focus ring toward the base member and contact surfaces, facing downward, arranged at a predetermined interval in a circumferential direction thereof; and a supporting member that is connected to the base member and has first and second contact surfaces. Further, the first contact surfaces and the second contact surfaces are arranged at the predetermined interval in the circumferential direction such that the second and first contact surfaces are alternately arranged. Moreover, the first contact surfaces are located at a position different from that of the second contact surfaces in a height direction, and the contact surfaces of the pressing member are protruded at a distance larger than distances of the first and second contact surfaces in the height direction. 1. A mounting table structure including an electrostatic chuck at a central region thereof and a base member that mounts thereon a focus ring along a periphery of the electrostatic chuck , the mounting table structure comprising:a sheet, having elasticity and thermal conductivity, provided between the focus ring and the base member;a pressing member provided along a periphery of the focus ring, and configured to press the focus ring toward the base member to contract the sheet; anda supporting member connected to the base member,wherein the pressing member includes a pressing surface that presses the focus ring toward the base member and a plurality of contact surfaces that face downward and are arranged at a predetermined interval in a circumferential direction thereof,the supporting member includes first contact surfaces and second contact surfaces,the first contact surfaces are arranged at the predetermined interval in the circumferential direction,the second contact surfaces are arranged at the predetermined interval in the ...

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10-03-2016 дата публикации

Electrostatic chuck assemblies capable of bidirectional flow of coolant and semiconductor fabricating apparatus having the same

Номер: US20160071755A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An electrostatic chuck assembly, including an electrostatic chuck on which a substrate is loaded; a channel that provides a flow passage for coolant in the electrostatic chuck, the channel having a first opening at a first end corresponding to a center of the substrate and a second opening at a second end corresponding to an edge of the substrate; and a valve box to control a flow direction of the coolant in the channel, the valve box including a first supply valve to control an introduction of the coolant into the first opening; a first return valve to control a drainage of the coolant from the second opening; a second supply valve to control an introduction of the coolant into the second opening; and a second return valve to control a drainage of the coolant from the first opening.

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08-03-2018 дата публикации

ELECTROSTATIC CHUCK DEVICE

Номер: US20180068883A1
Автор: ITO Tomomi, Miura Yukio
Принадлежит: Sumitomo Osaka Cement Co., Ltd.

Provided is an electrostatic chuck device which includes: an electrostatic chuck section having one main surface serving as a placing surface on which a plate-shaped sample is placed, and having a built-in internal electrode for electrostatic attraction; a first adhesion layer which contains spacers and a silicone adhesive and in which a layer thickness D is in a range of 3 to 25 μm and a ratio (φ/D) between the layer thickness D and an average particle diameter φof the spacers is in a range of 0.1 to 1.0; a plurality of heating members bonded to the surface on the side opposite to the placing surface of the electrostatic chuck section in a pattern having a gap with respect to one another by the first adhesion layer; a second adhesion layer which contains a silicone adhesive; and a base section having a function of cooling the electrostatic chuck section. 1. An electrostatic chuck device comprising:an electrostatic chuck section having one main surface serving as a placing surface on which a plate-shaped sample is placed, and having a built-in internal electrode for electrostatic attraction;{'sub': S', 'S, 'a first adhesion layer which contains spacers and a silicone adhesive and in which a layer thickness D is in a range of 3 to 25 μm and a ratio (φ/D) between the layer thickness D and an average particle diameter φof the spacers is in a range of 0.1 to 1.0;'}a plurality of heating members bonded to the surface on the side opposite to the placing surface of the electrostatic chuck section in a pattern having a gap with respect to one another by the first adhesion layer;a second adhesion layer which contains a silicone adhesive; anda base section having a function of cooling the electrostatic chuck section, in this order.2. The electrostatic chuck device according to claim 1 , wherein a content rate of the spacers having a particle diameter more than twice an average particle diameter in which a cumulative volume percentage in a particle size distribution of the ...

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12-06-2014 дата публикации

COMPLIANT MICRO DEVICE TRANSFER HEAD ARRAY WITH METAL ELECTRODES

Номер: US20140159324A1
Принадлежит: LUXVUE TECHNOLOGY CORPORATION

Compliant monopolar and bipolar micro device transfer head arrays and methods of formation from SOI substrates are described. In an embodiment, an array of compliant transfer heads are formed over a base substrate and deflectable toward the base substrate, and a patterned metal layer includes a metal interconnect layer electrically connected with an array of the metal electrodes in the array of compliant transfer heads. 1. A compliant micro device transfer head array , comprising:a base substrate; a lower insulating layer;', 'a spring layer over the lower insulating layer, wherein the spring layer includes a mesa structure protruding from a spring arm;', 'an upper insulating layer over the spring layer;', 'a metal electrode over the upper insulating layer and the mesa structure; and', 'a dielectric layer covering the metal electrode over the mesa structure; and, 'an array of compliant transfer heads formed over the base substrate and deflectable toward the base substrate, each compliant transfer head comprisinga patterned metal layer including a metal interconnect layer electrically connected with an array of the metal electrodes in the array of compliant transfer heads.2. The compliant micro device transfer head array of claim 1 , wherein the patterned metal layer further comprises an array of metal leads electrically connected with the array of metal electrodes.3. The compliant micro device transfer head array of claim 2 , wherein the array of compliant transfer heads extend from a first side of a support structure claim 2 , and further comprising a second array of compliant transfer heads that extend from a second side of the support structure opposite the first side.4. The compliant micro device transfer head array of claim 1 , wherein each compliant transfer head is deflectable into a cavity within the base substrate.5. The compliant micro device transfer head array of claim 4 , wherein the array of compliant transfer heads are deflectable into a first cavity ...

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24-03-2016 дата публикации

COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODES

Номер: US20160086837A1
Принадлежит:

A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes. 1. An electrostatic transfer head array comprising:a base substrate;an insulating layer on the base substrate: a first trace interconnect integrally formed with a first array of electrodes; and', 'a second trace interconnect integrally formed with a second array of electrodes;', 'wherein the first array of electrodes is electrically insulated from the second array of electrodes;, 'a device layer on the insulating layer, the device layer comprisingan array of dielectric joints between the first array of electrodes and the second array of electrodes;wherein the first trace interconnect and the second trace interconnect are parallel to one another, and the dielectric joints are perpendicular to the first trace interconnect and the second trace interconnect.2. The electrostatic transfer head array of claim 1 , wherein each electrode of the first array of electrodes and the second array of electrodes is deflectable toward the base substrate.3. The electrostatic transfer head array of claim 2 , further comprising a cavity in the base substrate claim 2 , and the first array of electrodes and the second array of electrodes are deflectable into the cavity.4. The electrostatic transfer head array of claim 2 , further comprising an array of cavities in the base substrate claim 2 , and the first array of electrodes and the second array of electrodes are deflectable into the array ...

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24-03-2016 дата публикации

System and method for electrostatic clamping of workpieces

Номер: US20160087557A1
Принадлежит: Axcelis Technologies Inc

A system and method for clamping a workpiece to an electrostatic clamp (ESC) comprises placing a first workpiece on a surface of the ESC and applying a first set of clamping parameters to the ESC, therein clamping the first workpiece to the surface of the ESC with a first clamping force. A degree of clamping of the workpiece to the ESC is determined and the application of the first set of clamping parameters to the ESC is halted based on a process recipe. A second set of clamping parameters is applied to the ESC after halting the application of the first set of clamping parameters to the ESC, and the workpiece is removed from the surface of the ESC concurrent with the application of the second set of clamping parameters to the ESC when the degree of clamping of the workpiece to the ESC is less than or approximately equal to a threshold clamping value. The second set of clamping parameters to the ESC is further halted after removing the workpiece from the surface of the ESC.

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31-03-2022 дата публикации

ELECTRODE-EMBEDDED MEMBER AND METHOD FOR MANUFACTURING SAME, ELECTROSTATIC CHUCK, AND CERAMIC HEATER

Номер: US20220102180A1
Автор: YABUHANA Masaki
Принадлежит:

An electrode-embedded member includes a ceramic-made substrate , an electrode , a connection member containing at least one of tungsten and molybdenum and embedded in the substrate in a state in which a first principal surface faces the electrode and is electrically connected to the electrode , and a hole portion extending from an outer surface of the substrate to a second principal surface of the connection member . A buffer member embedded in the substrate contains at least a ceramic material forming the substrate and a conductive material containing at least one of tungsten and molybdenum as a constituent element. The buffer member covers at least part of an edge of the connection member 1. An electrode-embedded member comprising:a ceramic-made substrate;an electrode embedded in the substrate;a connection member containing at least one of tungsten and molybdenum and having a first principal surface and a second principal surface, the connection member being embedded in the substrate in a state in which the first principal surface faces the electrode and the connection member is electrically connected to the electrode; anda hole portion extending from an outer surface of the substrate to the second principal surface of the connection member,the electrode-embedded member being characterized in thata buffer member is embedded in the substrate,the buffer member contains at least a ceramic material and at least one of tungsten and molybdenum, andthe buffer member covers at least part of an edge of the connection member.2. An electrode-embedded member according to claim 1 , wherein the buffer member contains at least a ceramic material forming the substrate and a conductive material containing at least one of tungsten and molybdenum as a constituent element.3. An electrode-embedded member according to claim 1 , further comprising an external metallic terminal connected to the connection member with part of the external metallic terminal inserted into the hole portion.4 ...

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21-03-2019 дата публикации

APPARATUS AND METHOD TO COAT GLASS SUBSTRATES WITH ELECTROSTATIC CHUCK AND VAN DER WAALS FORCES

Номер: US20190085443A1
Принадлежит:

A chucking apparatus and methods for coating a glass substrate using a vacuum deposition process are disclosed. In one or more embodiments, the chucking apparatus includes an ESC (ESC), a carrier disposed on the ESC, wherein the carrier comprises a first surface adjacent to the ESC and an opposing second surface for forming a Van der Waals bond with a third surface of a glass substrate, without application of a mechanical force on a fourth surface of the glass substrate opposing the third surface. In one or more embodiments, the method includes disposing a carrier and a glass substrate on an ESC, such that the carrier is between the glass substrate and the ESC to form a chucking assembly, forming a Van der Waals bond between the carrier and the glass substrate, and vacuum depositing a coating on the glass substrate. 1. A chucking apparatus for coating a glass substrate using a vacuum deposition process , the apparatus comprising:an electrostatic chuck (ESC);a carrier disposed on the ESC, wherein the carrier comprises a first surface adjacent to the ESC and an opposing second surface for forming a Van der Waals bond with a third surface of a glass substrate, without application of a mechanical force on a fourth surface of the glass substrate opposing the third surface, andwherein at least one of the second surface and third surface comprises a surface roughness Ra of from about 0.1 nm to less than 0.6 nm.2. The apparatus of claim 1 , wherein the Van der Waals bond is formed without application of a mechanical force on the glass substrate.3. The apparatus of claim 1 , wherein the ESC is adapted to apply a clamping force in a range from about 3 gf/cmand 10 gf/cm.4. The chucking apparatus of claim 1 , wherein the glass substrate comprises a first coefficient of thermal expansion and the carrier comprises a second coefficient of thermal expansion that is within 10% of the first coefficient of thermal expansion.5. The chucking apparatus of claim 4 , wherein the first ...

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19-06-2014 дата публикации

MICRO PICK UP ARRAY WITH INTEGRATED PIVOT MOUNT

Номер: US20140169927A1
Принадлежит: LUXVUE TECHNOLOGY CORPORATION

Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a micro pick up array structure allows the micro pick up array to automatically align with the carrier substrate. Deflection of the micro pick up array may be detected to control further movement of the micro pick up array. 1. A micro pick up array comprising:a base laterally around a pivot platform, and a beam between the pivot platform and the base, wherein the beam is coupled with the pivot platform at an inner pivot and coupled with the base at an outer pivot;an array of electrostatic transfer heads supported by the pivot platform.2. The micro pick up array of claim 1 , wherein the outer pivot is on a base edge and the inner pivot is on a pivot platform edge claim 1 , and wherein the base edge is orthogonal to the pivot platform edge.3. The micro pick up array of claim 2 , further comprising a second beam coupled with the base by a second outer pivot on a second base edge and coupled with the pivot platform by a second inner pivot on a second pivot platform edge.4. The micro pick up array of claim 2 , wherein the beam is laterally around the pivot platform and coupled with the pivot platform at a second inner pivot and coupled with the base at a second outer pivot.5. The micro pick up array of claim 4 , wherein the inner pivot is across the pivot platform from the second inner pivot claim 4 , and wherein the outer pivot is across the pivot platform from the second outer pivot.6. The micro pick up array of claim 1 , wherein the inner pivot and outer pivot comprise silicon.7. The micro pick up array of claim 1 , wherein each electrostatic transfer head includes a top surface having a surface area in a range of 1 to 10 claim 1 ,000 square micrometers.8. The micro pick up array of claim 1 , further comprising an operating voltage source contact on the base claim 1 , the operating voltage source contact in electrical connection with the array of electrostatic ...

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31-03-2016 дата публикации

Compliant electrostatic transfer head with defined cavity

Номер: US20160094160A1
Принадлежит: LuxVue Technology Corp

A compliant electrostatic transfer head and method of forming a compliant electrostatic transfer head are described. In an embodiment, a compliant electrostatic transfer head includes a base substrate, a cavity template layer on the base substrate, a first confinement layer between the base substrate and the cavity template layer, and a patterned device layer on the cavity template layer. The patterned device layer includes an electrode that is deflectable toward a cavity in the cavity template layer. In an embodiment, a second confinement layer is between the cavity template layer and the patterned device layer.

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31-03-2016 дата публикации

MICRO PICK UP ARRAY PIVOT MOUNT DESIGN FOR STRAIN AMPLIFICATION

Номер: US20160094161A1
Принадлежит:

Systems and methods for aligning a transfer head assembly with a substrate are disclosed. In an embodiment a pivot mount is used for generating a feedback signal in a closed-loop motion control system. In an embodiment, the pivot mount includes primary spring arms and secondary spring arms extending between a pivot platform and a base of the pivot mount. The secondary spring arms are characterized by a lower stiffness than the primary spring arms, and strain sensing elements are located along the secondary spring arms. 1. A pivot mount comprising:a pivot platform;a base;a primary spring arm fixed to the pivot platform at a primary inner root, fixed to the base at a primary outer root, and characterized by a corresponding primary axis length spanning between the primary outer root and primary inner root; anda secondary spring arm fixed to the pivot platform at a secondary inner root, fixed to the base at a secondary outer root, and characterized by a secondary axis length spanning between the secondary outer root and secondary inner root; anda strain sensing element along the secondary spring arm;wherein the secondary spring arm is characterized as having a lower stiffness than the primary spring arm.2. The pivot mount of claim 1 , wherein the primary axis length is greater than the secondary axis length.3. The pivot mount of claim 2 , wherein an average width of the primary spring arm along the primary axis length is wider than an average width of the secondary spring arm along the secondary axis length.4. The pivot mount of claim 3 , wherein an average thickness of the primary spring arm along the primary axis length is substantially equal to an average thickness of the secondary spring arm along the secondary axis length.5. The pivot mount of claim 3 , wherein the primary spring arm and the secondary spring arm are formed of a same material.6. The pivot mount of claim 3 , wherein the secondary spring arm includes a switch-back along the secondary axis length such ...

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21-03-2019 дата публикации

ELECTROSTATIC CHUCK DEVICE

Номер: US20190088517A1
Принадлежит:

An aspect of the present invention has an object to provide an electrostatic chuck device which is provided with a plurality of divided heaters and in which uniform temperature control of a zone which is heated by each heater can be performed with a simple configuration. An electrostatic chuck device according to an aspect of the present invention includes: an electrostatic chuck part which has a mounting surface on one principal surface thereof to mount a plate-shaped sample and has an electrode for electrostatic attraction; a temperature controlling base part which is provided at a side opposite to the mounting surface of the electrostatic chuck part and is configured to cool the electrostatic chuck part; a high frequency generating electrode which is provided in a layer between the electrostatic chuck part and the temperature controlling base part; a high frequency power source which is connected to the high frequency generating electrode; a first heater element which is configured with a plurality of main heaters which are provided in a layer between the high frequency generating electrode and the temperature controlling base part; and a guard electrode which is provided in a layer between the high frequency generating electrode and the first heater element. 1. An electrostatic chuck device comprising:an electrostatic chuck part which has a mounting surface on one principal surface thereof to mount a plate-shaped sample and has an electrode for electrostatic attraction;a temperature controlling base part which is provided at a side opposite to the mounting surface of the electrostatic chuck part and is configured to cool the electrostatic chuck part;a high frequency generating electrode which is provided in a layer between the electrostatic chuck part and the temperature controlling base part;a high frequency power source which is connected to the high frequency generating electrode;a first heater element which is configured with a plurality of main heaters ...

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09-04-2015 дата публикации

CHARGED PARTICLE BEAM APPARATUS

Номер: US20150097123A1
Принадлежит:

An object of the present invention is to provide a charged particle beam apparatus that effectively removes electrical charges from an electrostatic chuck. 1. A charged particle beam apparatus comprising:a charged particle source;an electrostatic chuck mechanism that holds the sample to be irradiated by the charged particle beam; anda sample chamber that maintains a space containing the electrostatic chuck mechanism in a vacuum state,wherein the charged particle beam apparatus further includes an ultraviolet light source to irradiate ultraviolet rays within the sample chamber, and an irradiation target member irradiated by the ultraviolet light and the irradiation target member is positioned perpendicular to the adsorption surface of the electrostatic chuck.2. The charged particle beam apparatus according to claim 1 , comprising:a sample stage that holds electrostatic chuck; anda control device that controls the sample stage and the ultraviolet light source,wherein the control device controls the ultraviolet light source so as to irradiate ultraviolet rays when the electrostatic chuck is mounted at a position below the irradiation target section.3. The charged particle beam apparatus according to claim 1 ,wherein the irradiation target member includes an irradiation target section irradiated by the ultraviolet rays, and a plurality of axially symmetrical apertures centered on the irradiation target section.4. The charged particle beam apparatus according to claim 3 ,wherein the irradiation target section includes an irradiation target surface larger than the irradiation range of the ultraviolet rays.5. The charged particle beam apparatus according to claim 1 , comprising:a control device that measures the electrical charge accumulated on the electrostatic chuck,wherein the control device implements electrical charge removal utilizing the ultraviolet light source when the measured result exceeds a specified value. The present invention relates to a charged particle ...

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05-05-2022 дата публикации

Chuck for plasma processing chamber

Номер: US20220139681A1
Принадлежит: Lam Research Corp

An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate.

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21-03-2019 дата публикации

SUBSTRATE SUPPORT WITH ELECTRICALLY FLOATING POWER SUPPLY

Номер: US20190090338A1
Принадлежит:

Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes. 1. A processing method , comprising:electrically coupling a first DC power source to a chucking electrode embedded in a substrate support assembly, the substrate support assembly comprising a substrate support formed of a dielectric material and a support base, wherein the substrate support assembly is disposed in a processing volume of a processing chamber;electrically coupling a second DC power source to a plurality of conductive elements disposed in the substrate support and extending from a substrate support surface thereof;electrically coupling a first DC power from the first DC power source to a reference voltage contact of the second DC power source;applying the first DC power from the first DC power source to the chucking electrode; andapplying a second DC power from the second DC power source to the plurality of conductive elements.2. The method of claim 1 , wherein applying the second DC power comprises pulsing the second DC power by operating a switch disposed between the second DC power source and the plurality of conductive elements.3. The method of claim 2 , wherein the support base is electrically conductive claim 2 , and wherein the plurality of conductive elements is electrically coupled to the support base.4. The method of claim 2 , wherein pulsing the second DC power comprises cyclically pulsing the second DC power at a frequency between about 10 Hz and about 100 kHz.5. The method of claim 4 , wherein a duty cycle of the cyclically pulsed second DC power is between about 10% and about 90%.6. The method of claim 2 , further comprising forming a plasma in the processing ...

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06-04-2017 дата публикации

Electrostatic chuck with thermal choke

Номер: US20170098566A1
Принадлежит: Lam Research Corp

Apparatuses, systems, and techniques for providing enhanced electrostatic chucks are provided. Such apparatuses, systems, and techniques may include, for example, a common RF and DC electrode in an electrostatic chuck, connection, at a location external to a semiconductor processing chamber, of a high-voltage DC power source and a high-voltage RF power source to a common conductive pathway leading to an electrostatic chuck in the interior of the semiconductor processing chamber, a very thin dielectric layer located on an upper surface of an electrostatic chuck, and/or an axial thermal choke that may be used to control heat flow within an electrostatic chuck.

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12-04-2018 дата публикации

SUBSTRATE SUPPORT UNIT, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND METHOD FOR CONTROLLING THE SAME

Номер: US20180102238A1
Принадлежит: SEMES CO., LTD.

A substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit that supports a substrate in the treatment space, a gas supply unit configured to supply a treatment gas into the treatment space, and a plasma source configured to generate plasma from the treatment gas. The support unit includes an electrostatic chuck, on which the substrate is positioned, a first ring surrounding a circumference of the substrate positioned on the electrostatic chuck, a second ring surrounding a circumference of the electrostatic chuck and formed of an insulation material, an insertion body disposed in the second ring and formed of a conductive material, and an impedance control unit configured to adjust an impedance of the insertion body. 1. A substrate treating apparatus comprising:a chamber having a treatment space in the interior thereof;a support unit that supports a substrate in the treatment space;a gas supply unit configured to supply a treatment gas into the treatment space; anda plasma source configured to generate plasma from the treatment gas,wherein the support unit comprises:an electrostatic chuck, on which the substrate is positioned;a first ring surrounding a circumference of the substrate positioned on the electrostatic chuck;a second ring surrounding a circumference of the electrostatic chuck and formed of an insulation material;an insertion body disposed in the second ring and formed of a conductive material; andan impedance control unit configured to adjust an impedance of the insertion body.2. The substrate treating apparatus of claim 1 , whereinthe support unit further comprises:a high frequency power source configured to provide RF power to an electrode provided in the electrostatic chuck, andwherein the impedance control unit controls coupling between the electrostatic chuck and the first ring by adjusting an impedance of the insertion body.3. The substrate treating apparatus of claim 2 , wherein the impedance ...

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23-04-2015 дата публикации

METHOD FOR FORMING AN ELECTROSTATIC CHUCK USING FILM PRINTING TECHNOLOGY

Номер: US20150109715A1
Автор: BROWN KARL M.
Принадлежит: Applied Materials, Inc.

In one embodiment, a method for forming an electrostatic chuck includes forming vias in a ceramic plate and printing a metal paste in the vias and curing the ceramic plate. The method includes printing the metal paste on a front surface of the ceramic plate and curing the ceramic plate, and printing the metal paste on a bottom surface of the ceramic plate and curing the ceramic plate to form one or more contact pads. The method also includes printing a dielectric film on the front surface of the ceramic plate and curing the ceramic plate. The method may further include printing one or more heating elements on a bottom surface of the ceramic plate and curing the ceramic plate, printing the dielectric film on the bottom, and bonding the ceramic plate to a backing plate. 1. A method for fabricating an electrostatic chuck comprising:forming vias in a ceramic plate;printing a metal paste in the vias and curing the ceramic plate;printing the metal paste on a front surface of the ceramic plate and curing the ceramic plate;printing the metal paste on a bottom surface of the ceramic plate and curing the ceramic plate to form one or more contact pads on the bottom surface of the ceramic plate; andprinting a dielectric film on the front surface of the ceramic plate and curing the ceramic plate.2. The method of claim 1 , wherein the printing the metal paste on the bottom surface of the ceramic plate further comprises:printing one or more heating elements on a bottom surface of the ceramic plate and curing the ceramic plate.3. The method of claim 2 , further comprising:printing the dielectric film on the bottom surface of the ceramic plate and curing the ceramic plate to encapsulate the one or more heating elements.4. The method of claim 1 , wherein the printing the metal paste on the front surface forms at least two electrodes on the front surface of the ceramic plate.5. The method of claim 4 , wherein the at least two electrodes form a Double O pattern claim 4 , an ...

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08-04-2021 дата публикации

Substrate support pedestal and plasma processing apparatus

Номер: US20210104385A1
Принадлежит: Tokyo Electron Ltd

There is provided a substrate support pedestal including: a first metallic member having a recess formed in an upper portion of the first metallic member; a second metallic member provided on the first metallic member and configured to seal the recess; a substrate support part provided on the second metallic member; and one or more thermoelectric elements disposed in the recess, wherein the recess is filled with a heat transfer medium.

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08-04-2021 дата публикации

Electrostatic chuck and method for manufacturing same

Номер: US20210104426A1
Принадлежит: Kyocera Corp

An electrostatic chuck includes an insulating base body including a predetermined surface, and an electrode inside the base body, which is layer shaped along the predetermined surface. An upper surface of the electrode facing a side where the predetermined surface is located and the base body are in contact. A gap which is rendered a vacuum or filled with a gas is interposed between a side surface of the electrode and the base body.

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19-04-2018 дата публикации

EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY

Номер: US20180106371A1
Принадлежит:

An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. When the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave. When the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance. The predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state. 1. An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber , the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly , the edge seal comprising: an annular upper surface,', 'an annular lower surface,', 'an inner surface, and', 'an outer surface,, 'an elastomeric band configured to be arranged within the groove, the elastomeric band having'} when the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave,', 'when the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance, and', 'the predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state., 'wherein,'}2. The edge seal of claim 1 , wherein the outer surface is (i) a single ...

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02-04-2020 дата публикации

MULTIPASS TRANSFER SURFACE FOR DYNAMIC ASSEMBLY

Номер: US20200102219A1
Принадлежит:

A method of manufacturing an intermediate transfer surface includes depositing an array of etch stops on a conductive surface, etching the conductive surface to form mesas of the conductive surface separated by gaps, and coating the mesas with a dielectric coating. A method of performing microassembly includes forming an assembly of particles on an assembly plane, providing an intermediate transfer surface having an array of electrodes, applying a bias to the intermediate transfer surface to form an electrostatic field between the assembly plane and the intermediate transfer surface, and moving the intermediate transfer surface towards the assembly surface until the electrostatic field strength is strong enough to cause transfer of the assembly to the intermediate transfer surface. 1. A method of manufacturing an intermediate transfer surface , comprising:depositing an array of etch stops on a conductive surface;etching the conductive surface to form mesas of the conductive surface separated by gaps; andcoating the mesas with a dielectric coating.2. The method as claimed in claim 1 , further comprising depositing dielectric into the gaps.3. The method as claimed in claim 2 , wherein depositing dielectric into the gaps comprises depositing enough dielectric to planarize the dielectric with the mesas.4. The method as claimed in claim 2 , wherein depositing dielectric into the gaps comprises depositing dielectric to leave gaps.5. The method as claimed in claim 1 , further comprising removing the etch stops;6. The method as claimed in claim 1 , further comprising connecting the mesas of the conductive surface to a voltage source.7. The method of claim 6 , wherein connecting the mesas to the voltage source comprises connecting the mesas to a single electrical connection.8. A method of performing microassembly claim 6 , comprising:forming an assembly of particles on an assembly plane;providing an intermediate transfer surface having an array of electrodes;applying a bias ...

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30-04-2015 дата публикации

Electrostatic chuck and method of manufacturing electrostatic chuck

Номер: US20150116889A1
Принадлежит: Tocalo Co Ltd

An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive.

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29-04-2021 дата публикации

ATTRACTING METHOD, MOUNTING TABLE, AND PLASMA PROCESSING APPARATUS

Номер: US20210126559A1
Автор: Matsuyama Shoichiro
Принадлежит:

A method of attracting an object to a mounting table is provided. The object is a substrate, an edge ring, or a combination of the substrate and the edge ring. The mounting table is provided with an electrostatic chuck including electrodes. After the object is placed on the electrostatic chuck, n-phase alternating current (AC) voltages (n≥2) are applied to the electrodes. Each phase voltage of the n-phase AC voltages has a phase different from each other, and the phase voltage of the n-phase AC voltages is applied based on a self-bias voltage of the object. 1. A method of attracting an object to a mounting table provided with an electrostatic chuck including electrodes , the method comprising:placing the object on the electrostatic chuck; and the object is a substrate, an edge ring, or a combination of the substrate and the edge ring, and', 'the phase voltage of the n-phase AC voltages is applied based on a self-bias voltage of the object., 'applying n-phase alternating current (AC) voltages (n≥2) to the electrodes, each phase voltage of the n-phase AC voltages having a phase different from each other; wherein'}2. The method according to claim 1 , wherein the phase voltage of the n-phase AC voltages is obtained by superimposing claim 1 , on an AC component claim 1 , negative direct-current (DC) voltage based on the self-bias voltage of the object.3. The method according to claim 2 , wherein the self-bias voltage is calculated in accordance with a condition of plasma processing.4. The method according to claim 2 , wherein the self-bias voltage is detected by a voltage detector configured to detect voltage of the object.5. A mounting table comprising:a base;an electrostatic chuck provided on the base;n number of electrodes (n≥2) provided inside the electrostatic chuck; anda power supply configured to apply n-phase alternating current (AC) voltages to the electrodes, each phase voltage of the n-phase AC voltages having a phase different from each other; whereinthe ...

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09-06-2022 дата публикации

Lamellar ceramic structure

Номер: US20220181126A1
Принадлежит: Lam Research Corp

In some examples, a substrate support assembly comprises a monolithic ceramic body, a heater element disposed within the monolithic ceramic body, and an RF antenna disposed within the monolithic ceramic body. One or more power lines supplies the heater element and the RF antenna. A lamellar structure is formed or included within the monolithic ceramic body, the lamellar structure including at least one layer having a thermal conductivity different than a thermal conductivity of the monolithic ceramic body.

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09-04-2020 дата публикации

Reflectometer to monitor substrate movement

Номер: US20200111696A1
Принадлежит: Lam Research Corp

Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.

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09-04-2020 дата публикации

Electrostatic chuck

Номер: US20200111697A1
Принадлежит: NGK Insulators Ltd

An electrostatic chuck has a structure in which an electrostatic electrode is embedded in a disk-like ceramic plate and attracts a wafer that is placed on the ceramic plate and that has a diameter smaller than that of the ceramic plate by Johnsen-Rahbek force. The electrostatic chuck includes an insulating film that has an electric resistance larger than that of the ceramic plate in an annular region of a front surface of the ceramic plate from an outer circumferential edge of the ceramic plate to the inside of an outer circumferential edge of the wafer that is placed on the ceramic plate.

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