Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus

A surface acoustic wave resonator which can realize favorable frequency-temperature characteristics and suppress frequency variations is provided. The surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|Ψ|≦49.57°), and an IDT that is provided on the quartz crystal substrate, includes a plurality of electrode fingers, and excites a stop band upper end mode surface acoustic wave, wherein inter-electrode finger grooves are provided between the electrode fingers in a plan view, and wherein if a line occupation rate of convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ηg, and a line occupation rate of the electrode fingers disposed on the convex portions is ηe, η g >η e and 0.59<η eff <0.73 are satisfied in a case where an effective line occupation rate ηeff of the IDT is an arithmetic mean of the line occupation rate ηg and the line occupation rate ηe.

Sealed surface acoustic wave element package

An electronic component includes: a semiconductor substrate having a first surface and a second surface opposing to the first surface; a trans-substrate conductive plug that penetrates the semiconductor substrate from the first surface to the second surface; an electronic element provided in the vicinity of the first surface of the semiconductor; and a sealing member that seals the electronic element between the sealing member and the first surface, wherein the electronic element is electrically connected to the trans-substrate conductive plug.

Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit

It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT.

Acoustic wave device

An acoustic wave device includes: a multilayer structure that has plural surfaces which principal surfaces of plural layers provide; a chip including an acoustic wave filter and mounted on a first surface; a resin unit sealing the chip; a wiring pattern that is formed on a second surface and electrically connected to at least one of resonators; a ground pattern that is formed on the second surface along a part of the wiring pattern, and is away from the wiring pattern; and an external terminal that is formed on a third surface and electrically connected to the wiring pattern and the ground pattern, the third surface being disposed on an opposite side of the first surface with respect to the second surface; wherein a part of the wiring pattern that comes closest to the ground pattern is substantially formed in parallel with the ground pattern.

Method of manufacturing boundary acoustic wave device

A method of manufacturing a boundary acoustic wave device includes the steps of forming an electrode on a first medium layer, forming a second medium layer so as to cover the electrode on the first medium layer, and forming a sound absorbing layer on an external surface of the second medium layer. The sound absorbing layer has an acoustic velocity of transverse waves that is lower than an acoustic velocity of transverse waves of the second medium layer.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a semiconductor substrate including a first face and a second face on a side opposite to the first face;a foundation layer formed on the first face of the semiconductor substrate;a first electrode formed on the foundation layer;a second electrode formed on the foundation layer;an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face of the semiconductor substrate, and the integrated circuit being electrically connected to the first electrode and the second electrode;a groove portion formed through the semiconductor substrate;an insulating film formed on a side wall of the groove portion;a conductive portion formed inside the groove portion on the insulating film and electrically connected to the second electrode;a first insulation layer formed on the foundation layer;a first interconnection formed on the first insulation layer, the first interconnection being electrically connected to the first electrode;a second insulation layer formed on the first interconnection and the first insulation layer;a second interconnection formed on the second insulation layer, the second interconnection being electrically connected to the first interconnection; anda third insulation layer formed on the second interconnection and the second insulation layer; ...

Saw-based electronic elements and filter devices

Aspects and examples provide electronic elements and filter devices configured to prevent deterioration of the propagation characteristics caused by input and output signals being electromagnetically coupled to an electric conductor side wall. In one example an electronic filter includes an element substrate having a top surface, a bottom surface, a side surface, and piezoelectric body. A circuit including a plurality of SAW resonators is formed on the top surface of the element substrate. The electronic filter further includes a sealing substrate having a top surface and a bottom surface, and a side wall including an electric conductor and formed to define a cavity between the top surface of the element substrate and the bottom surface of the sealing substrate, the side wall enclosing a periphery of the circuit and being connected to a ground potential of the circuit.

Wafer-Level Package and Method for Production Thereof

A hermetic wafer-level package composed of two piezoelectric wafers, preferably identical in terms of material, and a production method therefor are presented. The electrical and mechanical connection between the two wafers is accomplished with frame structures and pillars, the partial structures of which, distributed between two wafers, are wafer-bonded with the aid of connecting layers.

Electro acoustic rf filter with impedance element having improved performance and multiplexer component comprising the filter

An improved electro acoustic RF filter (FC) is provided. The RF filter comprises an electro acoustic resonator (EAR) connected between an input port and an output port, an impedance element and a damping and/or dissipation element (DE) in mechanical contact to the impedance element. The damping and/or dissipation element is provided and configured to remove acoustic energy from the impedance element which has a similar construction as the resonator on the same substrate. With such a construction an acoustically inactive impedance element (AIIE) is obtained.

Elastic wave device and manufacturing method therefor

An elastic wave device includes an interdigital transducer electrode and a wiring electrode made of metal and provided on a first main surface of a piezoelectric substrate. Via hole electrodes penetrate the piezoelectric substrate. Each via hole electrode is connected to an external connection terminal. A cover member defines a hollow space in which the interdigital transducer electrode is sealed, together with the first main surface of the piezoelectric substrate. A heat dissipating member is provided on the wiring electrode to extend from the wiring electrode toward the cover member and penetrate the cover member.

Package

Embodiments of the present packages comprise a package body that is made of an insulating material, has a front surface and a back surface, and has a rectangular shape in plan view, a metal layer that is formed along a peripheral portion of the front surface of the package body and that has a frame shape in plan view, a metal frame that is joined to the metal layer with a brazing material and has a frame shape in plan view. a pair of electrode pads that are formed on the front surface of the package body surrounded by the metal layer and configured to mount a crystal oscillator, and an opening portion of a cavity opened in a position that excludes the pair of electrode pads, wherein the metal layer, the pair of electrode pads, and the opening portion of the cavity are positioned in the same plane.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a semiconductor substrate including a first face and a second face on a side opposite to the first face;an external connection terminal formed on the first face of the semiconductor substrate;a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal;a second electrode formed on the first face of the semiconductor substrate;an integrated circuit formed on the first face, the integrated circuit being electrically connected to the first electrode and the second electrode;a rear face electrode formed on the second face of the semiconductor substrate;a groove portion formed in the semiconductor substrate, the groove portion having an inner wall;an insulating film formed on side walls of the groove portion; anda conductive portion formed inside the groove portion on the insulating portion and electrically connected to the second electrode and the rear face electrode;wherein the integrated circuit and the first electrode are electrically disposed between the second electrode and the external connection terminal.2. The device of claim 1 , wherein the semiconductor substrate is silicon.3. The device of claim 2 , wherein:the second electrode comprises a second electrode rear face facing the first face of the semiconductor substrate;the rear face electrode comprises a rear face ...

CIRCUIT MODULE

A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element. 1. A circuit module comprising:a mounting substrate including a conductor wiring;an elastic wave element provided in or on a main surface of the mounting substrate;an electric element provided in or on the main surface of the mounting substrate, the electric element being different from the elastic wave element; anda resin portion provided in or on the main surface of the mounting substrate to cover the elastic wave element and the electric element; whereinthe resin portion is an insulator;the elastic wave element and the electric element are connected to each other by the conductor wiring and are arranged adjacent to one another;a height of the elastic wave element is less than a height of the electric element;a thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than a thickness of the resin portion in a region in which the resin portion covers the electric element;the elastic wave element includes a piezoelectric substrate and an interdigital transducer (IDT) electrode provided in or on a main surface of the piezoelectric substrate; andthe main surface of the ...

Multi-Function Frequency Control Device

A single frequency control device incorporating a high frequency resonator, a low frequency resonator and a temperature sensing element, the latter thermally coupled closely to the said resonators to facilitate temperature sensing with higher resolution and accuracy. Additional benefits offered by the structure include smaller size and lower cost. 1. A frequency control device , constructed as a single component , comprising at least three thermally coupled elements: a first resonating element whose resonant frequency is within the HF band or higher , a second resonating element whose resonant frequency is within the LF band or lower , and a temperature sensing element , and which is arranged to use both an output of the said temperature sensing element and an output frequency of the said second resonating element in correcting for deviation in the output frequency of the said first resonating element or second resonating element due to temperature variations.2. A frequency control device according to arranged to determine the output frequency of the said second resonating element using the output frequency of the said first resonating element as a frequency measurement reference.3. A frequency control device as in wherein the said first resonating element and the said second resonating element are located in a common hermetically sealed cavity.4. A frequency control device as in wherein the said first resonating element and the said second resonating element are located in separate hermetically sealed cavities.5. A frequency control device as in wherein the temperature sensing element is located in a separate cavity.6. A frequency control device as in wherein the said first resonating element claim 1 , the said second resonating element claim 1 , and the temperature sensing element are located in a common hermetically sealed cavity.7. A frequency control device as in wherein the said single component comprises a multi-layer ceramic package.8. A frequency control ...

Method for manufacturing electronic device, cover body, electronic device, electronic apparatus, and moving object

A method for manufacturing an electronic device is provided, in which a base and a lid as a cover body are bonded together while forming an interior space between the base and the lid. The method includes: a step of preparing the lid including a groove communicating the interior space with the outside, the groove being in a back surface of the lid; a step of accommodating a gyro element as an electronic component in the interior space; a first bonding step of bonding the base and the lid together by seam welding at an area for bonding except for a portion corresponding to the groove; and a second bonding step of bonding the base and the lid by welding using a laser beam at a portion of the area for bonding, the portion including an end of the groove on the outside side, to thereby close the groove.

Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

Electronic device and module including the same

An electronic device includes a support layer is provided on a piezoelectric substrate and surrounds a functional element. A cover layer is located above the support layer, and faces the piezoelectric substrate. A protective layer seals the support layer and the cover layer. The support layer is provided on at least the outer periphery of the piezoelectric substrate, and defines a hollow portion within the outer periphery of the piezoelectric substrate. The protective layer includes a first portion above the hollow portion, a second portion above the support layer, and a curved surface that is convex in an opposite direction from the piezoelectric substrate.

Multilayer piezoelectric substrate

An acoustic wave device includes a layered substrate having a piezoelectric material layer bonded to a second material layer including a material having a higher thermal conductivity than the piezoelectric material layer, interdigital transducer electrodes disposed on a surface of the piezoelectric material layer, contact pads disposed on the piezoelectric material layer and in electrical contact with the interdigital transducer electrodes, external bond pads disposed on the second material layer, and conductive vias passing through the layered substrate and providing electrical contact between the contact pads and external bond pads.

Protective Cover for an Acoustic Wave Device and Fabrication Method Thereof

A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device. The fabrication method comprises: defining a sacrificial area on the acoustic wave device; forming a sacrificial layer on the sacrificial area; covering a metal covering layer on the sacrificial layer and connecting a bottom rim of the metal covering layer to the acoustic wave device and forming an opening between the bottom rim of the metal covering layer and the acoustic wave device; and removing the sacrificial layer to form a cavity between the metal covering layer and the resonant area by using a chemical solution, wherein the chemical solution enters from the opening between the metal covering layer and the acoustic wave device.

ELASTIC WAVE DEVICE AND ELECTRONIC COMPONENT

An elastic wave device includes a plate-shaped elastic wave element and a resin structure including a high elastic modulus resin portion and low elastic modulus resin portions. The low elastic modulus resin portions are provided in regions of side surfaces of an elastic wave element substrate, which extend from end portions at an IDT electrode formation surface side and do not reach a surface at a side opposite to an IDT electrode formation surface, and a remaining resin portion of a portion of the resin structure, which contacts with the side surfaces of the elastic wave element substrate, is the high elastic modulus resin portion. 1. An elastic wave device comprising:an elastic wave element including an elastic wave element substrate including an IDT electrode formation surface and an IDT electrode provided on the IDT electrode formation surface; anda resin structure including first and second main surfaces opposing each other and being embedded with the elastic wave element such that at least a portion of the IDT electrode formation surface is exposed at the first main surface side; whereinthe resin structure includes a high elastic modulus resin portion having a relatively high elastic modulus and a low elastic modulus resin portion having a relatively low elastic modulus;the low elastic modulus resin portion is provided in a region of a side surface of the elastic wave element substrate, which extends from an end portion at the IDT electrode formation surface side and does not reach a surface at a side opposite to the IDT electrode formation surface; anda remaining resin portion of a portion of the resin structure, which contacts with the side surface of the elastic wave element substrate, is the high elastic modulus resin portion.2. The elastic wave device according to claim 1 , wherein the IDT electrode formation surface of the elastic wave element substrate and the first main surface of the resin structure are flush with each other.3. The elastic wave device ...

ELASTIC WAVE DEVICE

An elastic wave device includes a support substrate, a film stack including a piezoelectric thin film, and an IDT electrode. The film stack is partially absent in a region outside a region where the IDT electrode is located in plan view. The elastic wave device further includes a support layer located on the support substrate in at least a portion of a region where the film stack is partially absent and surrounds a region where the film stack is located in plan view and a cover member located on the support layer. The cover member defines a hollow space facing the IDT electrode together with the piezoelectric thin film and the support layer. 1. An elastic wave device comprising:a support substrate;a film stack located on the support substrate, the film stack including a plurality of films including a piezoelectric thin film; andan IDT electrode located on one surface of the piezoelectric thin film; whereinthe film stack is partially absent in a region outside a region where the IDT electrode is located in plan view; and a support layer located on the support substrate in at least a portion of a region where the film stack is partially absent and surrounds a region where the film stack is located in plan view; and', 'a cover member located on the support layer, the cover member defining a hollow space facing the IDT electrode together with the piezoelectric thin film and the support layer., 'the elastic wave device further includes2. The elastic wave device according to claim 1 , wherein the piezoelectric thin film includes LiTaO.3. The elastic wave device according to claim 1 , further comprising:a first insulating layer that extends from at least a portion of the region where the film stack is absent onto the piezoelectric thin film; anda wiring electrode electrically connected to the IDT electrode, the wiring electrode extending from an upper surface of the piezoelectric thin film onto the first insulating layer to reach a portion of the first insulating layer ...

Elastic wave device and method for manufacturing the same

An elastic wave device includes a piezoelectric substrate, functional electrodes on the piezoelectric substrate, a support layer on the piezoelectric substrate with a frame shape surrounding the functional electrodes, a cover member on the support layer to seal an opening of the support layer, the cover member including a first main surface facing the support layer, and a second main surface opposite to the first main surface. Recesses are located in the cover member and are open to the second main surface. Via holes extend through the support layer and to bottom surfaces of the recesses of the cover member, the via holes each including an opening that is open to the bottom surface. The area of the opening of each of the via holes is not more than the area of the bottom surface of the corresponding recess of the cover member. First via conductor portions are provided in the via holes and second via conductor portions are provided in the recesses of the cover member.

Electronic part comprising acoustic wave device

An electronic component has a mounting board having a mounting surface, a SAW device mounted on the mounting surface, and a sealing part covering the SAW device and filled between the SAW device and the mounting surface. The SAW device has an element substrate, an excitation electrode provided on a major surface of the element substrate and a cover covering the excitation electrode. SAW device is mounted on the mounting surface so as to make top surfaces of the cover face the mounting surface. The sealing part contains a resin and insulating fillers having a coefficient of thermal expansion lower than that of the resin. The content of the fillers differs between an area (for example AR 1 ) including at least a portion of an area between the cover and the mounting surface and other areas (for example AR 2 and AR 3 ).

ELECTRONIC DEVICE

An electronic device includes a support substrate, a piezoelectric layer that is provided on the support substrate, a functional element including an electrode provided on a surface of the piezoelectric layer, a metallic frame body that is provided on the support substrate so as to surround the piezoelectric layer and the functional element in a plan view, a metallic lid that is provided on the frame body so as to form a space between the lid and the support substrate, and seals the functional element into the space, and a columnar body that is provided between the support substrate and the lid in the space. 1. An electronic device comprising:a support substrate;a piezoelectric layer that is provided on the support substrate;a functional element including an electrode provided on a surface of the piezoelectric layer;a metallic frame body that is provided on the support substrate so as to surround the piezoelectric layer and the functional element in a plan view;a metallic lid that is provided on the frame body so as to form a space between the lid and the support substrate, and seals the functional element into the space; anda columnar body that is provided between the support substrate and the lid in the space.2. The electronic device according to claim 1 , whereinthe piezoelectric layer has a through hole passing therethrough, andthe columnar body is provided between the support substrate and the lid in the through hole.3. The electronic device according to claim 2 , whereinthe height of the columnar body is larger than a distance from an upper surface of the support substrate to an upper surface of the electrode.4. The electronic device according to claim 2 , whereinthe columnar body is provided apart from the piezoelectric layer.5. The electronic device according to claim 2 , whereinone of end surfaces of the columnar body is in contact with the support substrate, and the other thereof is in contact with the lid.6. The electronic device according to claim 1 , ...

ELECTRONIC DEVICE COMPRISING AN OPTICAL CHIP AND METHOD OF FABRICATION

An electronic device includes a carrier substrate having a front face. An electronic chip is mounted on the front face of the carrier substrate and includes an optical component. An encapsulation cover is mounted on top of the front face of the carrier substrate and bounds a chamber within which the chip is situated. A front opening extends through the cover and is situated in front of the optical component. An optical element, designed to allow light to pass, is mounted within the chamber at a position which covers the front opening of the encapsulation cover. The optical element includes a central region designed to deviate the light and having an optical axis aligned with the front opening and the optical component. A positioning pattern is provided on the optical element to assist with mounting the optical element to the cover and mounting the cover to the carrier substrate. 1. An electronic device , comprising:a carrier substrate having a front mounting face;an electronic chip mounted on the front mounting face of the carrier substrate, the electronic chip having, in its front face, an optical component;an encapsulation cover mounted on top of the front face of the carrier substrate and which bounds a chamber within which the electronic chip is situated, the encapsulation cover having a front opening situated in front of the optical component of the electronic chip; andan optical element, designed to allow light to pass, which covers the front opening of the encapsulation cover and which is mounted to the encapsulation cover within said chamber;wherein the optical element includes a central region designed to deviate the light, said central region having an optical axis aligned with the front opening, and further having a positioning pattern.2. The device according to claim 1 , wherein the positioning pattern is visible through the front opening.3. The device according to claim 1 , wherein the optical element comprises a base wafer and a back layer claim 1 , ...

Elastic wave device

An elastic wave device includes a multilayer film stacked on a support substrate. A first support layer surrounds a region including interdigital transducer electrodes. A second support layer is disposed in the region surrounded by the first support layer. A cover is fixed on the first support layer and the second support layer so as to close a cavity defined by the first support layer. The multilayer film is partially disposed on the support substrate, and an insulating layer is disposed in at least a portion of a region in which the multilayer film is not disposed. At least one of the first support layer and the second support layer is disposed on the insulating layer.

POLYMER LID WAFER-LEVEL PACKAGE WITH AN ELECTRICALLY AND THERMALLY CONDUCTIVE PILLAR

An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening. 1. An apparatus , comprising:a device substrate having an upper surface;a frame layer having an upper surface, the frame layer being disposed over the upper surface of the device substrate, wherein a first opening exists in the frame layer;a seed layer disposed over the device substrate and substantially bounded by the first opening;a lid layer having an upper surface, the lid layer disposed over the upper surface of the frame layer, wherein a second opening exists in the lid layer, and the second opening is aligned with the first opening;an electrically and thermally conductive pillar disposed in the first opening and the second opening, the electrically and thermally conductive pillar having an upper surface that is beneath the upper surface of the lid layer; andan electrically and thermally conductive layer disposed over the upper surface of the electrically and thermally conductive pillar, and extending above the upper surface of the lid layer.2. The apparatus of claim 1 , wherein a portion of the seed layer is between a lower surface of the frame layer and the upper surface of the device substrate.3. The apparatus of claim 1 , wherein the electrically and thermally conductive pillar comprises a first material claim 1 , and the electrically and thermally conductive layer comprises ...

ACOUSTIC WAVE DEVICE, MULTIPLEXER, AND COMMUNICATION APPARATUS

A SAW device includes a piezoelectric substrate, a support substrate which is located on a lower surface of the piezoelectric substrate and has a smaller thermal expansion coefficient than that of the piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, a cover forming a space above the IDT electrode, and a plurality of first strip conductors which extend alongside each other on the cover and at least a part of which overlaps the space when viewed on a plane. 1. An acoustic wave device comprising;a piezoelectric substrate,a support substrate which is on a lower surface of the piezoelectric substrate and has a smaller thermal expansion coefficient than that of the piezoelectric substrate,an excitation electrode on the piezoelectric substrate,a cover forming a space above the excitation electrode, anda plurality of first strip conductors which extend alongside each other on the cover and at least a part of which overlaps the space when viewed on a plane.2. The acoustic wave device according to claim 1 , further comprising a first bus conductor which extends on the cover with a broader width than each of the plurality of first strip conductors claim 1 , whereinthe plurality of first strip conductors extend from the first bus conductor.3. The acoustic wave device according to claim 2 , further comprising a second bus conductor which extends alongside the first bus conductor and has a broader width than those of the plurality of first strip conductors claim 2 , whereinthe plurality of first strip conductors bridge the first bus conductor and the second bus conductor.4. The acoustic wave device according to claim 1 , further comprising one or more second strip conductors which intersect with the plurality of first strip conductors claim 1 , wherein{'b': 1', '2, 'the number of the one or more second strip conductors is less than / of the number of the plurality of first strip conductors.'}5. The acoustic wave device according to claim 4 , ...

Circuit member and mounting structure having hollow space, and method for producing the mounting structure

A circuit member including: an element having a functional region; a tabular cover disposed opposite to the functional region; and a rib formed to surround the functional region, for providing a space between the functional region and the cover. The cover includes a sheet S having a thickness of 100 μm or less. The sheet S has a tensile elastic modulus Es at 175° C. of 10 GPa or more. The tensile elastic modulus Es at 175° C. of the sheet S is preferably 20 GPa or more.

Acoustic wave device and method of fabricating the same

An acoustic wave device includes: a substrate; a functional element formed on the substrate and including an excitation electrode that excites an acoustic wave; a columnar electrode formed on the substrate and electrically connected to the excitation electrode; a metal frame body formed on the substrate and surrounding the functional element and the columnar electrode; and a ceramic substrate sealing the functional element in combination with the metal frame body, a first metal layer bonded to the columnar electrode and a second metal layer bonded to the metal frame body being formed on a surface of the ceramic substrate.

ELASTIC WAVE DEVICE

An elastic wave device includes a substrate, an elastic wave element, and an exterior resin layer. The substrate includes an outer electrode on one main surface thereof and a first mounting electrode on another main surface thereof. The elastic wave element includes a piezoelectric substrate, a transmission functional electrode, a reception functional electrode, and ground terminals on one main surface of the piezoelectric substrate, and the ground terminals are connected to the first mounting electrode. High-thermal-conductivity conductor layers are provided on another main surface of the piezoelectric substrate, conductor vias penetrate between both main surfaces of the piezoelectric substrate, and the high-thermal-conductivity conductor layers and the ground terminals are connected to each other by the conductor vias. 1. An elastic wave device comprising:a substrate; andat least one elastic wave element mounted on a first main surface of the substrate; whereinthe substrate includes an outer electrode on a second main surface thereof and a first mounting electrode on the first main surface thereof;the elastic wave element includes a piezoelectric substrate, and a ground terminal is provided on a first main surface of the piezoelectric substrate;the ground terminal is connected to the first mounting electrode;a high-thermal-conductivity conductor layer having a higher thermal conductivity than the piezoelectric substrate is provided on a second main surface of the piezoelectric substrate;a conductor via penetrates between the first and second main surfaces of the piezoelectric substrate; andthe high-thermal-conductivity conductor layer and the ground terminal are connected to each other by the conductor via.2. The elastic wave device according to claim 1 , whereinthe at least one elastic wave element is a duplexer or a multiplexer provided in or on the one piezoelectric substrate; anda transmission functional electrode and a reception functional electrode are ...

Acoustic wave device and method of manufacturing the same

An acoustic wave device includes a substrate, a support portion and a protective member. The substrate has an acoustic wave generator formed on a surface thereof. The support portion is disposed on the surface of the substrate, and includes an accommodating space configured to accommodate the acoustic wave generator. The protective member is coupled to the support portion and disposed to be spaced apart from the acoustic wave generator by a predetermined interval. The protective member is disposed in a seating groove formed in the support portion.

ELECTRONIC COMPONENT AND METHOD OF FABRICATING THE SAME

An electronic component includes: a substrate; a device chip including a functional element located on a lower surface thereof and mounted on an upper surface of the substrate so that the functional element faces the upper surface of the substrate across an air gap; a ring-shaped metal layer located on the upper surface of the substrate and surrounding the device chip in plan view, a side surface of the ring-shaped metal layer being located further in than a side surface of the substrate; a metal sealing portion surrounding the device chip in plan view and bonding with an upper surface of the ring-shaped metal layer, a side surface of the metal sealing portion being located further out than the side surface of the ring-shaped metal layer; and a metal film located on the side surface of the metal sealing portion and the side surface of the ring-shaped metal layer. 1. An electronic component comprising:a substrate;a device chip that includes a functional element located on a lower surface thereof and is mounted on an upper surface of the substrate so that the functional element faces the upper surface of the substrate across an air gap;a ring-shaped metal layer that is located on the upper surface of the substrate and surrounds the device chip in plan view, a side surface of the ring-shaped metal layer being located further in than a side surface of the substrate;a metal sealing portion that surrounds the device chip in plan view and bonds with an upper surface of the ring-shaped metal layer, a side surface of the metal sealing portion being located further out than the side surface of the ring-shaped metal layer; anda metal film located on the side surface of the metal sealing portion and the side surface of the ring-shaped metal layer.2. The electronic component according to claim 1 , wherein a distance between the side surface of the metal sealing portion and the side surface of the ring-shaped metal layer is greater than a film thickness of the metal film.3. The ...

METHOD OF PROVIDING PROTECTIVE CAVITY AND INTEGRATED PASSIVE COMPONENTS IN WAFER LEVEL CHIP SCALE PACKAGE USING A CARRIER WAFER

A wafer-level chip-scale package includes a polymeric body having a conductive via passing through the polymeric body and a piezoelectric substrate directly bonded to an upper end of the conductive via. The wafer-level chip-scale package further includes a cavity defined between a portion of the polymeric body and the piezoelectric substrate and a metal seal ring disposed in the body and having an upper end bonded to the piezoelectric substrate, the metal seal ring passing only partially through the body. 1. A wafer-level chip-scale package comprising:a polymeric body having a conductive via passing through the polymeric body;a piezoelectric substrate directly bonded to an upper end of the conductive via, the wafer-level chip-scale package having a cavity defined between a portion of the polymeric body and the piezoelectric substrate; anda metal seal ring disposed in the body and having an upper end bonded to the piezoelectric substrate, the metal seal ring passing only partially through the body.2. The wafer-level chip-scale package of further comprising a metal standoff disposed between one of the upper end of the conductive via and the piezoelectric substrate and the upper end of the seal ring and the piezoelectric substrate.3. The wafer-level chip-scale package of wherein the seal ring surrounds the cavity and hermetically seals the cavity.4. The wafer-level chip-scale package of further comprising a dielectric layer disposed on walls of the cavity and hermetically sealing the cavity.5. The wafer-level chip-scale package of further comprising a layer of nitride disposed on a lower end and side surfaces of the seal ring.6. The wafer-level chip-scale package of further comprising interdigital electrodes of an acoustic wave filter disposed on the piezoelectric substrate within the cavity.7. The wafer-level chip-scale package of further comprising a passive device disposed within the body.8. The wafer-level chip-scale package of wherein the passive device is ...

ELECTRONIC DEVICE AND MODULE INCLUDING THE SAME

An electronic device includes an insulation material layer provided on a first main surface of a piezoelectric substrate and surrounding a functional element, and a protective layer provided on the insulation material layer. The piezoelectric substrate and the insulation material layer define a hollow portion accommodating the functional element. The protective layer includes a first portion above the hollow portion, a second portion adjacent to the first portion at one end of the second portion, and a third portion adjacent to the second portion at another end of the second portion. A distance between the first main surface and a surface of the protective layer in the thickness direction is greatest at a location where the second portion is adjacent to or in a vicinity of the first portion, and the distance is shortest at a location where the second portion is adjacent to or in a vicinity of the third portion. 1. An electronic device , comprising:a piezoelectric substrate including a first main surface;a functional element provided on or above the first main surface;an insulation material layer provided on or above the first main surface and surrounding the functional element; anda protective layer provided on or above the insulation material layer; whereinthe piezoelectric substrate and the insulation material layer define a hollow portion that accommodates the functional element; a first portion above the hollow portion;', 'a second portion adjacent to the first portion at one end of the second portion; and', 'a third portion adjacent to the second portion at another end of the second portion; and, 'in a cross-sectional view in a direction perpendicular to a thickness direction of the piezoelectric substrate, the protective layer includesa distance between the first main surface and a surface of the protective layer in the thickness direction is greatest at a location where the second portion is adjacent to or in a vicinity of the first portion, and the distance ...

ACOUSTIC WAVE FILTER DEVICE

An acoustic wave filter device includes a filter disposed on a substrate, a wall member disposed on the substrate and surrounding the filter, a cap member disposed on the wall member and bounding an internal space with the wall member; and a support member disposed on the cap member. The support member is disposed above the internal space and includes a bump disposed on the cap member. 1. An acoustic wave filter device , comprising:a filter disposed on a substrate;a wall member disposed on the substrate and surrounding the filter;a cap member disposed on the wall member and bounding an internal space with the wall member; anda support member disposed on the cap member,wherein the support member is disposed above the internal space and comprises a bump disposed on the cap member.2. The acoustic wave filter device of claim 1 , wherein the cap member comprises a metal or an alloy claim 1 , and the support member is formed on an upper surface of the cap member.3. The acoustic wave filter device of claim 2 , wherein the support member is exposed through a passivation layer disposed on the cap member.4. The acoustic wave filter device of claim 1 , further comprising:an under-bump metal member disposed adjacent to the wall member; anda solder ball formed on the under-bump metal member.5. The acoustic wave filter device of claim 4 , wherein the solder ball protrudes to a height of or above the support member.6. The acoustic wave filter device of claim 4 , wherein a metal layer is disposed on the substrate and is electrically connected to the under-bump metal member.7. The acoustic wave filter device of claim 1 , wherein the cap member comprises one of a polymer and a material containing a polymer.8. The acoustic wave filter device of claim 1 , wherein a pad comprised of a metal is disposed on the cap member claim 1 , and the pad is disposed under the support member.9. The acoustic wave filter device of claim 1 , wherein the support member comprises a plurality of support ...

Acoustic wave device

Embodiments described herein may provide an acoustic wave device, a method of fabricating an acoustic wave device, and a system incorporating an acoustic wave device. The acoustic wave device may include a transducer disposed on a substrate, with a contact coupled with the transducer. The acoustic wave device may further include a wall layer and cap that define an enclosed opening around the transducer. A via may be disposed through the cap and wall layer over the contact, and a top metal may be disposed in the via. The top metal may form a pillar in the via and a pad on the cap above the via. The pillar may provide an electrical connection between the pad and the contact. In some embodiments, the acoustic wave device may be formed as a wafer-level package on a substrate wafer.

Electronic component module, and manufacturing method for electronic component module

An electronic component module includes an electronic component, a resin structure, a wiring portion, and a shield portion. The resin structure covers a second main surface and at least a portion of a side surface of the electronic component. The wiring portion is electrically connected to the electronic component. The shield portion includes a first conductor layer and a second conductor layer. The first conductor layer is spaced away from the electronic component between the electronic component and the resin structure, and has electrical conductivity. The second conductor layer is spaced away from the wiring portion between the wiring portion and the resin structure, and has electrical conductivity. In the shield portion, the first conductor layer and the second conductor layer are integrated.

Cavity structures

A cavity structure comprises a cavity substrate comprising a substrate surface, one or more cavity walls extending from the substrate surface, a cap disposed on the one or more cavity walls, and at least a portion of a module tether physically attached to the cavity substrate. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume, for example enclosing a vacuum, air, an added gas, or a liquid. The cavity structure can be a micro-transfer printable structure provided on a cavity structure source wafer. A plurality of cavity structures can be disposed on a destination substrate, for example by transfer printing, dry contact printing, or micro-transfer printing.

WAFER LEVEL PACKAGE AND METHOD OF MANUFACTURE

A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer. 1. A wafer level package , comprisinga functional wafer with a first surfacedevice structures connected to device pads arranged on the first surfacea cap wafer, having an inner and an outer surface, bonded with the inner surface to the first surface of the functional wafera frame structure surrounding the device structures and being arranged between functional wafer and cap waferconnection posts connecting the device pads on the first surface to inner cap pads on the inner surfaceelectrically conducting vias guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.2. The wafer level package of claim 1 ,wherein the functional wafer is a substrate wafer with a thin film functional layer on the first surfacewherein the cap wafer comprises the same material like the substrate waferwherein the thickness of the cap wafer is smaller than the thickness of the functional wafer.3. The wafer level package of claim 1 ,wherein the functional wafer is a silicon wafer with a thin film piezoelectric layer applied on the first surface thereofwherein the device structures are electrodes adapted for exciting acoustic waves in the piezoelectric layer.4. The wafer level package of claim 1 , comprisinga bridging line on the inner surface connecting two connection posts, ...

Surface acoustic wave device and composite module including same

A surface acoustic wave device includes a piezoelectric substrate including an interdigital transducer located on one principal surface thereof, an insulating layer arranged around the interdigital transducer, a cover layer arranged over the insulating layer and the interdigital transducer, and a columnar electrode penetrating through the insulating layer and the cover layer, and connected to the interdigital transducer through a connection wiring, wherein a buffer layer is arranged on the other principal surface of the piezoelectric substrate.

Acoustic wave filter device and package and method for manufacturing the same

An acoustic wave filter device includes a base having an acoustic wave filter part and a bonding part disposed thereon, the bonding part surrounding the acoustic wave filter part, and a cap having a bonding counterpart disposed thereon, the bonding counterpart being bonded to the bonding part of the base, and the bonding part includes a first bonding layer including gold, and the bonding counterpart includes a second bonding layer bonded to the first bonding layer and including tin.

COMPONENT WITH A THIN-LAYER COVERING AND METHOD FOR ITS PRODUCTION

A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M, M) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS). 2. The component according to claim 1 ,in which the wiring level (VE) comprises solderable connecting pads (AP) arranged on the planarization layer.3. The component according to a preceding claim claim 1 ,in which the thin-layer covering (DSA) comprises several partial layersin which the partial layers comprise a mechanically stable layer and a sealing layerin which the mechanically stable layer encloses above the carrier a cavity, in which at least a portion of the functional structure is enclosed.4. The component according to a preceding claim claim 1 , whereinthe functional structure (FS) is selected from: a MEMS structure, a micro-acoustic structure, an SAW structure, a BAN structure, or a GBAW structure.5. The component according to any of the preceding claims claim 1 , furthermore claim 1 , comprising a connecting face (AF) arranged externally to the thin-layer covering on the carrier (TR) and connected both to the functional structure (FS) and claim 1 , via a through-connection claim 1 , to the wiring level (VE).6. The component according to the preceding claim claim 1 , in which the connecting faces (AF) and the solderable connecting pads (AP) are present in different numbers and/or have a different distribution and/or are switched in the respective horizontal positions.7. The component according to any of the preceding claims claim 1 , furthermore claim 1 , comprising one or more circuit components on the planarization layer claim 1 , which circuit components are connected to the functional structure (FS) and selected from inductances claim 1 , capacitances claim 1 , ...

ELECTRONIC DEVICE

An electronic device includes: a first substrate including a first functional element located on an upper surface of the first substrate; a second substrate that is flip-chip mounted on the upper surface of the first substrate through a bump, and includes a second functional element located on a lower surface of the second substrate; and a sealing member that is located on the upper surface of the first substrate, surrounds the second substrate in plan view, is not located between the first substrate and the second substrate, seals the first functional element and the second functional element so that the first functional element and the second functional element are located across an air gap. 1. An electronic device comprising:a first substrate including a first functional element located on an upper surface of the first substrate;a second substrate that is flip-chip mounted on the upper surface of the first substrate through a bump, and includes a second functional element located on a lower surface of the second substrate; anda sealing member that is located on the upper surface of the first substrate, surrounds the second substrate in plan view, is not located between the first substrate and the second substrate, seals the first functional element and the second functional element so that the first functional element and the second functional element are located across an air gap.2. The electronic device according to claim 1 , wherein the first substrate and the second substrate have different linear thermal expansion coefficients.3. The electronic device according to claim 1 , wherein the first functional element includes an acoustic wave element.4. The electronic device according to claim 3 , wherein the second functional element includes an acoustic wave element.5. The electronic device according to claim 1 , wherein the sealing member is bonded to the upper surface of the first substrate claim 1 , and is not bonded to the second substrate.6. The electronic ...

DEVICE PACKAGING USING A RECYCLABLE CARRIER SUBSTRATE

According to various aspects and embodiments, a method for forming a packaged electronic device is provided. In accordance with one embodiment, the method comprises depositing a layer of temporary adhesive material on at least a portion of a surface of a first substrate having a coefficient of thermal expansion, depositing a layer of dielectric material on at least a portion of the layer of temporary adhesive material, forming at least one seal ring on at least a portion of the layer of dielectric material, providing a second substrate having a coefficient of thermal expansion that is substantially the same as the coefficient of thermal expansion of the first substrate, the second substrate having at least one bonding structure attached to a surface of the second substrate, and aligning the at least one seal ring to the at least one bonding structure and bonding the first substrate to the second substrate. 1. A method of forming a packaged electronic device , the method comprising:forming an electronic device on a first substrate;forming an inner seal ring and an outer seal ring on the first substrate around the electronic device, the inner seal ring including a binary alloy of two metal materials having a first ratio, the outer seal ring including the binary alloy of two metal materials having a second ratio that is different than the first ratio; andbonding a second substrate to the inner seal ring and to the outer seal ring.2. The method of further comprising:depositing a layer of polymeric temporary adhesive material on at least a portion of an upper surface of the first substrate; anddepositing a layer of dielectric material directly on at least a portion of an upper surface of the layer of polymeric temporary adhesive material.3. The method of wherein forming the inner seal ring and the outer seal ring on the first substrate includes forming the inner seal ring and the outer seal ring on at least a portion of an upper surface of the layer of dielectric ...

SWITCHABLE FILTERS AND DESIGN STRUCTURES

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes. 1. A filter comprising:a piezoelectric layer,a ground electrode on an underside of an insulator layera beam structure over the piezoelectric layer and surrounding the ground electrode.a signal wiring layer provided on the piezoelectric layer; andan actuator aligned with the beam structure.2. The filter of claim 1 , wherein claim 1 , upon actuation of the beam structure claim 1 , the signal electrode becomes interleaved with the ground electrode to form a SAW filter in the “on” state.3. The filter of claim 1 , wherein the beam structure and the ground electrode are both ground.4. The filter of claim 1 , wherein the ground electrode is a wiring layer.5. The filter of claim 4 , wherein the ground electrode is within an opening of the beam structure.6. The filter of claim 4 , wherein the ground electrode is suspended within the opening of the beam structure.7. The filter of claim 1 , wherein the beam structure is a MEMS beam structure.8. The filter of claim 1 , wherein claim 1 , upon actuation of the beam structure claim 1 , the signal electrode becomes interleaved with the ground electrode within a same plane.9. The filter of claim 1 , wherein beam structure is surrounded by an upper cavity and a lower cavity.10. The filter of claim 1 , wherein the piezoelectric layer is on insulator material.11. The filter of claim 1 , ...

Ceramic package, electronic component device, and method for manufacturing the electronic component device

A ceramic package includes a package body made of a ceramic and including a pair of surfaces, and side surfaces, disposed between four sides of one of the surfaces and four sides of the other surface; a cavity that has an opening in the surface of the package body; a metalizing layer disposed over the surface of the package body surrounding the opening of the cavity; and a metal frame joined to an upper surface of the metalizing layer with a brazing filler metal layer interposed therebetween. The surface surrounding the opening of the cavity includes pairs of opposing side portions and each side portion of at least one of the pairs has a recessed portion in a middle portion of the side portion and a pair of flat portions on respective sides of the recessed portion.

Multi-Function Frequency Control Device

A single frequency control device incorporating a high frequency resonator, a low frequency resonator and a temperature sensing element, the latter thermally coupled closely to the said resonators to facilitate temperature sensing with higher resolution and accuracy. Additional benefits offered by the structure include smaller size and lower cost.

Protective Cover for an Acoustic Wave Device and Fabrication Method Thereof

A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area on a surface of a substrate during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device, wherein at least one electrical device is provided on the surface of the substrate and the at least one electrical device includes a temperature sensor. The acoustic wave device protection structure comprising: a metal covering layer, having a concave surface and a bottom rim, the bottom rim connected to the acoustic wave device and forming at least one opening between the bottom rim and the acoustic wave device, and the concave surface covering over the resonant area to form a cavity between the concave surface and the resonant area.

VIBRATOR DEVICE, OSCILLATOR, ELECTRONIC DEVICE, AND VEHICLE

A vibrator device includes a circuit element, which has a first terminal and is a quadrangle in plan view, a vibrator, which is disposed on an active surface and is a quadrangle in plan view, a base, on which the circuit element is disposed and which has a second terminal, and a wire which connects the first terminal and the second terminal together. In plan view of the circuit element, at least one side of the vibrator is disposed along a direction where the one side intersects each of two adjacent sides of the circuit element, and the vibrator does not overlap the first terminal. 1. A vibrator device comprising:a circuit element that has a first terminal and is a quadrangle in plan view;a vibrator that is disposed on the circuit element and is a quadrangle in plan view;abase on which the circuit element is disposed and which has a second terminal; anda wire that connects the first terminal and the second terminal together,wherein in plan view of the circuit element, at least one side of the vibrator is disposed along a direction where the one side intersects each of two adjacent sides of the circuit element, and the vibrator does not overlap the first terminal.2. The vibrator device according to claim 1 ,wherein in the plan view, any one of corners of the vibrator is positioned outside the circuit element.3. The vibrator device according to claim 1 ,wherein in the plan view, any one of corners of the vibrator is in contact with an outline of the circuit element.4. The vibrator device according to claim 1 ,wherein when an area of the circuit element is set as M1 and an area of the vibrator is set as M2 in the plan view, 0.5≤M2/M1≤1 is satisfied.5. The vibrator device according to claim 1 ,wherein in the plan view, the plurality of second terminals are disposed on a perimeter of the circuit element and along each of four sides of the circuit element.6. The vibrator device according to claim 1 ,wherein the vibrator has a vibrator element and a vibrator element ...

ELECTRONIC COMPONENT HAVING A REINFORCED HOLLOWED STRUCTURE

Provide an electronic component that has a hollowed structure and is capable of suppressing the deformation of the hollowed structure due to the pressure during the module resin molding. The electronic component includes a device substrate a driver portion formed on one of the principle surfaces of the device substrate a protection portion configured to cover the driver portion so as to form a hollowed space around the driver portion an adhesion layer that is made of a resin and arranged above the protection portion and a reinforcing plate arranged on the adhesion layer wherein the reinforcing plate is a silicon substrate. 2. The electronic component according to claim 1 , whereinthe adhesion layer is a die-attach resin.3. An electronic component module claim 1 , comprising{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the electronic component according to mounted on a module substrate, and'}a resin layer formed by molding so as to cover the electronic component.4. An electronic component module claim 1 , comprising{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'the electronic component according to mounted on a module substrate, and'}a resin layer formed by molding so as to cover the electronic component.5. The electronic component module according to claim 3 , whereinthe electronic component and the module substrate are connected with a wire by wire bonding, anda portion or a whole of the wire is buried in the adhesion layer.6. The electronic component module according to claim 4 , whereinthe electronic component and the module substrate are connected with a wire by wire bonding, anda portion or a whole of the wire is buried in the adhesion layer. The present invention relates to electronic components with hollowed spaces and the like and electronic component modules incorporating such electronic components. The electronic components may be surface acoustic wave (SAW) devices, bulk acoustic wave (BAW) devices, and the like. Particularly, the present ...

ACOUSTIC WAVE DEVICE AND COMMUNICATION APPARATUS

The multiplexer includes a plurality of IDT electrodes on a substrate, an insulating cover located on the substrate so as to configure one or more spaces above the plurality of IDT electrodes, an antenna terminal, transmission terminal, and reception terminal which are all located on the substrate and pass through the cover, and a reinforcing layer which is located on the cover and is made of metal. By the plurality of IDT electrodes, a transmission filter located in a signal path connecting the antenna terminal and the transmission terminal and a receiving filter located in a signal path connecting the antenna terminal and the reception terminal. The reinforcing layer includes a first area part facing the transmission filter and a second area part which faces the receiving filter and is separated from the first area part. 1. An acoustic wave device comprising;a piezoelectric substrate comprising a first surface,a plurality of electrodes which are located on the first surface and excite acoustic waves, an insulating cover located on the first surface configuring one or more spaces above the plurality of electrodes,a common terminal, first terminal, and second terminal which are all located on the first surface and pass through the cover, anda reinforcing layer which is located on the cover, is made of metal, and is connected to the reference potential, wherein a first filter which is located in a first signal path connecting the common terminal and the first terminal and', 'a second filter which is located in a second signal path connecting the common terminal and the second terminal are configured, and, 'by the plurality of electrodes,'} a first area part which faces the first filter and the second filter and', 'a second area part which faces the second filter and is separated from the first area part., 'the reinforcing layer comprises'}2. The acoustic wave device according to claim 1 , further comprising a first reference potential terminal which is located on the ...

Elastic wave device

An elastic wave device includes a spacer layer on or above a support substrate and outside a piezoelectric film as seen in a plan view from a thickness direction of the support substrate. A cover layer is disposed on the spacer layer. A through electrode extends through the spacer layer and the cover layer and is electrically connected to the wiring electrode. The wiring electrode includes a first section overlapping the through electrode as seen in the plan view from the thickness direction, a second section overlapping the piezoelectric film as seen in the plan view from the thickness direction, and a step portion defining a step in the thickness direction between the first section and the second section. The spacer layer includes an end portion embedded in the cover layer.

MANUFACTURING METHOD OF MOUNTING STRUCTURE, AND LAMINATE SHEET THEREFOR

A manufacturing method of a mounting structure, the method including: a step of preparing a mounting member including a first circuit member and a plurality of second circuit members placed on the first circuit member, the mounting member having a space between the first circuit member and the second circuit member; a step of preparing a laminate sheet including a first thermal-conductive layer and a second thermal-conductive layer, the first thermal-conductive layer disposed at least on one outermost side; a disposing step of disposing the laminate sheet on the mounting member such that the first thermal-conductive layer faces the second circuit members; and a sealing step of pressing the laminate sheet against the first circuit member and heating the laminate sheet, to seal the second circuit members so as to maintain the space, and to cure the laminate sheet. The first thermal-conductive layer after curing has a coefficient of thermal conductivity in a thickness direction at room temperature being equal to or greater than that in a principal surface direction, and the second thermal-conductive layer after curing has a coefficient of thermal conductivity in a principal surface direction at room temperature being greater than that in a thickness direction. 1. A manufacturing method of a mounting structure , the method comprising:a step of preparing a mounting member including a first circuit member and a plurality of second circuit members placed on the first circuit member, the mounting member having a space between the first circuit member and the second circuit member;a step of preparing a laminate sheet including a first thermal-conductive layer and a second thermal-conductive layer, the first thermal-conductive layer disposed at least on one outermost side;a disposing step of disposing the laminate sheet on the mounting member such that the first thermal-conductive layer faces the second circuit members; anda sealing step of pressing the laminate sheet against ...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a semiconductor substrate including a first face and a second face on a side opposite to the first face;a foundation layer formed on the first face of the semiconductor substrate;a first electrode formed on the foundation layer;a second electrode formed on the foundation layer;an integrated circuit comprising at least two interconnected semiconductor devices, the at least two interconnected semiconductor devices formed on the first face, and the integrated circuit being electrically connected to the first electrode and the second electrode;a groove portion formed in the semiconductor substrate, the groove portion having an inner wall;an insulating film formed on side walls of the groove portion;a conductive portion formed inside the groove portion on the insulating film and electrically connected to the second electrode;a first insulation layer formed on the foundation layer;a first interconnection formed on the first insulation layer, the first interconnection being electrically connected to the first electrode;a second insulation layer formed on the first interconnection and the first insulation layer;a second interconnection formed on the second insulation layer, the second interconnection being electrically connected to the first interconnection; anda third insulation layer formed on the second interconnection and the second insulation layer; ...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. An electronic component comprising:a first silicon substrate including a first face and a second face on a side opposite to the first face;an integrated circuit formed on the first face;an external connection terminal formed on the first face of the silicon substrate;a first electrode formed on the first face of the silicon substrate and electrically connected to the external connection terminal and to the integrated circuit;a groove portion that has been etched through the silicon substrate;a conductive portion in the groove portion;an insulating film on the side walls of the groove portion that electrically insulates the conductive portion from the silicon substrate;a second electrode formed on the first face of the silicon substrate and electrically connected to the conductive portion and to the integrated circuit;a rear face insulating layer formed on the second face of the silicon substrate;a rear face electrode formed on the rear face insulating layer and electrically connected to the conductive portion;a second silicon substrate including a third face;an electronic element formed on the third face; anda terminal formed on the third face and electrically connecting the electronic element to the rear face electrode.2. The electronic component according to claim 1 , wherein the third face of the second silicon substrate faces the first silicon substrate.3. The ...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. An electronic component comprising:a first silicon substrate including a first face and a second face on a side opposite to the first face;an integrated circuit formed on the first face;an external connection terminal formed on the first face of the silicon substrate;a first electrode formed on the first face of the silicon substrate and electrically connected to the external connection terminal and to the integrated circuit;a groove portion that has been etched through the silicon substrate;a conductive portion in the groove portion, wherein in a plan view from above the first face and facing the first face, the external connection terminal is above at least a portion of the conductive portion;an insulating film on the side walls of the groove portion that electrically insulates the conductive portion from the silicon substrate;a second electrode formed on the first face of the silicon substrate and electrically connected to the conductive portion and to the integrated circuit;a rear face insulating layer formed on the second face of the silicon substrate;a rear face electrode formed on the rear face insulating layer and electrically connected to the conductive portion;a second silicon substrate including a third face;an electronic element formed on the third face; anda terminal formed on the third face and electrically connecting the electronic element to the rear ...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. An electronic component comprising:a first silicon substrate including a first face and a second face on a side opposite to the first face;an integrated circuit formed on the first face;an external connection terminal formed on the first face of the silicon substrate;a first electrode formed on the first face of the silicon substrate and electrically connected to the external connection terminal and to the integrated circuit;a groove portion that has been etched through the silicon substrate;a conductive portion in the groove portion, wherein in a plan view from above the first face and facing the first face, the external connection terminal is not above at least a portion of the conductive portion;an insulating film on the side walls of the groove portion that electrically insulates the conductive portion from the silicon substrate;a second electrode formed on the first face of the silicon substrate and electrically connected to the conductive portion and to the integrated circuit;a rear face insulating layer formed on the second face of the silicon substrate;a rear face electrode formed on the rear face insulating layer and electrically connected to the conductive portion;a second silicon substrate including a third face;an electronic element formed on the third face; anda terminal formed on the third face and electrically connecting the electronic element to the ...

ACOUSTIC WAVE FILTER, MULTIPLEXER, AND COMMUNICATION APPARATUS

An acoustic wave filter includes a first signal terminal X, an antenna terminal A, a ladder-type filter connected between the first signal terminal X and the antenna terminal A and including one or more serial resonators and one or more parallel resonators connected in a ladder shape, and a capacitor part and an inductor part which are connected in series between the first signal terminal X and a reference potential.

HIGH-FREQUENCY MODULE

In a high frequency module, in addition to a main transmission path in which a high-frequency signal propagates in first filter elements, a sub transmission path is defined by inductive coupling or capacitive coupling between a first inductor and a matching element or by inductive coupling between the first inductor and a second inductor. The sub transmission path has different amplitude characteristics and phase characteristics from those of the main transmission path depending on a degree of the inductive coupling or capacitive coupling, and transmission characteristics as a high-frequency module are adjustable by adjusting the amplitude characteristics and the phase characteristics of the sub transmission path. 1. A high-frequency module comprising:a first external connection terminal;a second external connection terminal;a filter section connected between the first external connection terminal and the second external connection terminal; anda matching element connected between the filter section and at least one of the first external connection terminal and the second external connection terminal; wherein a first connection terminal connected to the first external connection terminal;', 'a second connection terminal connected to the second external connection terminal;', 'a plurality of first filter elements connected in series between the first connection terminal and the second connection terminal; and', 'a first inductor; wherein, 'the filter section includesthe first inductor is inductively coupled or capacitively coupled to the matching element, and the first inductor is connected in parallel to a first filter element, among the plurality of the first filter elements, that is different from the first filter element connected to the matching element.2. A high-frequency module comprising:a first external connection terminal;a second external connection terminal;a filter section connected between the first external connection terminal and the second external ...

SURFACE ACOUSTIC WAVE DEVICE ASSEMBLY

A surface acoustic wave device assembly includes a collective board, first circuit portions provided on the collective board and respectively including first hot terminals and first ground terminals, a second circuit portion provided on the collective board and including second hot terminals and second ground terminals, and a power supply wiring provided on the collective board so as to surround the periphery of the first circuit portions and the second circuit portion. The first circuit portions include surface acoustic wave devices defining band pass filters. The second circuit portion defines a band pass filter. The first ground terminals and first hot terminals, and the second ground terminal are connected to the power supply wiring, the second hot terminals are not connected to the power supply wiring, and pass bands of the surface acoustic wave devices and a pass band of the band pass filter defined by the second circuit portion are the same or substantially the same. 1. A surface acoustic wave device assembly comprising:a collective board including a piezoelectric body;a plurality of first circuit portions provided on the collective board and respectively including IDT electrodes, and first hot terminals and first ground terminals connected to the IDT electrodes;a second circuit portion provided on the collective board and including a functional electrode, and a second hot terminal and a second ground terminal connected to the functional electrode; anda power supply wiring provided on the collective board so as to surround a periphery of the plurality of first circuit portions and the second circuit portion; whereinthe plurality of first circuit portions define surface acoustic wave devices as band pass filters and the second circuit portion define a band pass filter;the plurality of first ground terminals and the plurality of first hot terminals are connected to the power supply wiring, the second ground terminal is connected to the power supply wiring, and ...

METHOD OF PROVIDING PROTECTIVE CAVITY AND INTEGRATED PASSIVE COMPONENTS IN WAFER LEVEL CHIP SCALE PACKAGE USING A CARRIER WAFER

A wafer-level chip-scale package includes a body, a conductive via passing through the body, a contact bump formed at a lower portion of the body and in electrical connection with a lower end of the conductive via, a piezoelectric substrate directly bonded to an upper end of the conductive via, and a cavity defined between a portion of the body and the piezoelectric substrate. 1. A method of forming a wafer-level chip-scale package , the wafer-level chip-scale package including a device disposed on a piezoelectric substrate , the method comprising:forming a body of the package on a surface of a sacrificial wafer;forming conductive vias passing through the body;forming contact bumps in electrical connection with lower ends of the conductive vias at lower portions of the body;forming a metal seal ring within the body;removing the sacrificial semiconductor wafer from the body;forming a cavity within the body; andbonding a lower surface of the piezoelectric substrate directly to upper ends of the conductive vias and to the seal ring to position the device within the cavity with the piezoelectric substrate defining an upper wall of the cavity.2. The method of wherein forming the cavity in the body includes forming a metal layer on the surface of the sacrificial wafer prior to forming the body on the sacrificial wafer and removing the metal layer subsequent to forming the body on the surface of the sacrificial wafer.3. The method of wherein forming the device includes forming interdigital electrodes on a lower surface of the piezoelectric substrate.4. The method of further comprising forming a passive device within the body.5. The method of wherein forming the body includes depositing a first layer of polymeric material on the sacrificial wafer claim 1 , depositing a seal layer on the first layer of polymeric material claim 1 , and depositing a second layer of polymeric material on the seal layer.6. The method of wherein depositing the seal layer on the first layer of ...

SAW DEVICE AND METHOD FOR MANUFACTURING SAW DEVICE

A SAW device includes a SAW element, a conductor connected to the SAW element, an LT substrate including the SAW element, and a case for housing the LT substrate including the SAW element. The case includes a cover part, a lateral part, and a bottom part. The bottom part is including a sapphire substrate, the LT substrate is positioned on a first surface of the sapphire substrate, the first surface serving as an inner surface of the case, and a second surface opposite to the first surface serves as an outer surface of the case. The conductor includes a via conductor provided in a through-hole continuously penetrating through the sapphire substrate and the LT substrate. 1. A SAW device comprising:a SAW element;a conductor connected to the SAW element;an LT substrate including the SAW element; anda case for housing the LT substrate including the SAW element, whereinthe case includes a cover part, a lateral part, and a bottom part,the bottom part includes a sapphire substrate, the LT substrate is positioned on a first surface of the sapphire substrate, the first surface serving as an inner surface of the case, and a second surface opposite to the first surface serves as an outer surface of the case, andthe conductor includes a via conductor provided in a through-hole continuously penetrating through the sapphire substrate and the LT substrate.2. The SAW device according to claim 1 , whereinthe through-hole includes a first through-hole penetrating through the sapphire substrate, and an opening diameter of the first through-hole in the second surface is larger than an opening diameter of the first through-hole in the first surface.3. The SAW device according to claim 2 , whereinthe diameter of the first through-hole gradually increases with the distance from the first surface toward the second surface.4. The SAW device according to claim 1 , whereinthe first through-hole penetrating through the sapphire substrate has a center axis connected between a center of an ...

METHOD FOR MANUFACTURING HERMETIC SEALING LID MEMBER, HERMETIC SEALING LID MEMBER, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT HOUSING PACKAGE

This method for manufacturing a hermetic sealing lid member () includes forming a Ni plated metal plate () by forming a Ni plated layer () on a surface of a metal plate () having a corrosion resistance and forming the hermetic sealing lid member by punching the Ni plated metal plate. 1. A method for manufacturing a hermetic sealing lid member used for an electronic component housing package in which an electronic component is housed , comprising:forming a Ni plated metal plate by forming a Ni plated layer on a surface of a metal plate having a corrosion resistance; andforming the hermetic sealing lid member by punching the Ni plated metal plate.2. The method for manufacturing the hermetic sealing lid member according to claim 1 , further comprising slitting in which the metal plate or the Ni plated metal plate is cut into a plurality of the metal plates or a plurality of the Ni plated metal plates.3. The method for manufacturing the hermetic sealing lid member according to claim 2 , whereinthe slitting includes slitting the metal plate or the Ni plated metal plate such that the metal plate or the Ni plated metal plate on which the slitting has been performed has a width larger by a machining allowance of at least twice a thickness of the hermetic sealing lid member than a width of the hermetic sealing lid member.4. The method for manufacturing the hermetic sealing lid member according to claim 1 , whereinthe forming of the Ni plated metal plate includes forming the Ni plated layer on the surface of the metal plate by electrolytic Ni plating processing.5. The method for manufacturing the hermetic sealing lid member according to claim 1 , whereinthe forming of the Ni plated metal plate includes forming the Ni plated layer on both or one of an upper surface and a lower surface of the metal plate having the corrosion resistance, andthe forming of the hermetic sealing lid member by the punching includes forming, by the punching of the Ni plated metal plate, the hermetic ...

ELECTRONIC COMPONENT HOUSING PACKAGE, MULTI-PIECE WIRING SUBSTRATE, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT HOUSING PACKAGE

An electronic component housing package includes an insulating substrate having an upper surface including a mount for an electronic component, a frame-shaped metallized layer surrounding the mount on the upper surface of the insulating substrate, and a metal frame joined to the frame-shaped metallized layer with a brazing material. The frame-shaped metallized layer includes a first sloping portion sloping inwardly from an upper surface to an inner peripheral surface. The brazing material includes a fillet portion formed between an upper outer periphery of the frame-shaped metallized layer and the metal frame, and a filling portion formed between the first sloping portion and the metal frame. 1. An electronic component housing package , comprising:an insulating substrate having an upper surface including a mount for an electronic component;a frame-shaped metallized layer surrounding the mount on the upper surface of the insulating substrate; anda metal frame joined to the frame-shaped metallized layer with a brazing material,wherein the frame-shaped metallized layer includes a first sloping portion sloping inwardly from an upper surface to an inner peripheral surface, andthe brazing material includes a fillet portion formed between an upper outer periphery of the frame-shaped metallized layer and the metal frame, and a filling portion formed between the first sloping portion and the metal frame.2. The electronic component housing package according to claim 1 , whereinthe frame-shaped metallized layer includes, on an outer peripheral surface, a second sloping portion sloping outwardly from an upper end to a lower end of the outer peripheral surface, andthe brazing material covers the second sloping portion of the frame-shaped metallized layer.3. The electronic component housing package according to claim 1 , whereinthe second sloping portion of the frame-shaped metallized layer has a lower end in contact with an outer periphery of the upper surface of the insulating ...

Acoustic wave device, high-frequency front-end circuit, and communication device

An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer provided on the first main surface of the silicon support substrate and surrounding the piezoelectric layer, a cover layer provided on the support layer, a through-via electrode that extending through the silicon support substrate and the piezoelectric structure, and a first wiring electrode connected to the through-via electrode and electrically connected to the IDT electrode. The piezoelectric structure includes at least one layer having an insulating property, the at least one layer including the piezoelectric layer. The first wiring electrode is provided on the layer having an insulating property in the piezoelectric structure.

ELECTRONIC COMPONENT HOUSING PACKAGE, ELECTRONIC APPARATUS, AND ELECTRONIC MODULE

An electronic component housing package includes a base having a first principal face provided with a mounting section for mounting an electronic component; a frame having a second principal face, the frame being disposed on the base so as to surround the mounting section; a frame-shaped metallized layer disposed on the second principal face of the frame; and a side-surface conductor disposed on an inner side surface of the frame, the side-surface conductor connecting the frame-shaped metallized layer and a relay conductor formed on the first principal face, the side-surface conductor being covered with an insulating film from one end to the other end in a width direction of the side-surface conductor. 1. An electronic component housing package , comprising:a base provided with a mounting section for mounting an electronic component;a frame disposed on the base so as to surround the mounting section;a frame-shaped metallized layer disposed on the frame; anda side-surface conductor disposed on the frame, the side-surface conductor connecting the frame-shaped metallized layer and a relay conductor disposed on the base,part of the frame-shaped metallized layer being formed as an extended part on the frame,an insulating film covering the extended part.2. The electronic component housing package according to claim 1 ,wherein the insulating film covers the side-surface conductor.3. The electronic component housing package according to claim 2 ,wherein the insulating film covers the relay conductor.4. The electronic component housing package according to claim 1 ,wherein the insulating film continuously covers a region extending from the side-surface conductor to the relay conductor.5. The electronic component housing package according to claim 1 ,wherein the insulating film covers the side-surface conductor and the relay conductor so that no exposed part of the side-surface conductor and the relay conductor exists.6. An electronic apparatus claim 1 , comprising:{'claim- ...

HIGH-FREQUENCY MODULE

A high-frequency module includes a propagation path that has a simple structure and improves filter characteristics by causing an inductor and a matching network to electromagnetic field couple with each other such that attenuation characteristics outside of a frequency band of a transmission signal are improved without increasing the size of the high-frequency module. In addition, unintended electromagnetic field coupling between a first filter and the inductor is significantly reduced or prevented by a shield electrode. Therefore, unintended propagation of a high-frequency signal is significantly reduced or prevented. Therefore, the attenuation characteristics outside of the frequency band of transmission signal input to the transmission terminal are improved more effectively. 1. A high-frequency module comprising: a first terminal to which a first high-frequency signal is input;', 'a first filter through which the first high-frequency signal input to the first terminal passes;', 'a second terminal that outputs the first high-frequency signal that has passed through the first filter; and', 'a third terminal that is connected to the first filter;, 'a filter component includinga matching network that is connected to the second terminal;a module substrate on which the filter component is mounted;an inductor that adjusts characteristics of the first filter and is provided inside the module substrate, the inductor including a first end connected to the third terminal and a second end thereof connected to ground; anda shield electrode between the inductor and the filter component; whereinthe inductor and the matching network define a propagation path by electromagnetic field coupling with each other;the shield electrode is located to suppress electromagnetic field coupling between the inductor and the first filter; anda distance between the matching network and the first filter is larger than a distance between the matching network and the inductor.2. The high-frequency ...

SURFACE ACOUSTIC WAVE DEVICE

A surface acoustic wave device includes a piezoelectric substrate with an IDT electrode that excites a surface acoustic wave provided on a principal surface, a cover layer opposing the principal surface and that covers the IDT electrode, a support provided in a standing manner around the IDT electrode on the one principal surface, and that, with the cover layer separated from the IDT electrode, supports a piezoelectric-substrate-side surface of the cover layer, and a connector that is provided on the piezoelectric-substrate-side surface of the cover layer and that joins the cover layer and the support to each other. At least a portion of a cover-layer-side end portion of the support exists in the connector. A dimension of the connector in a normal direction to the one principal surface is less than a dimension of the support in the normal direction. 1. A surface acoustic wave device comprising:a piezoelectric substrate including one principal surface;an electrode provided on the one principal surface of the piezoelectric substrate and that excites a surface acoustic wave;a cover layer that is disposed at a location opposing the one principal surface and that covers the electrode;a support that is provided in a standing manner around the electrode on the one principal surface, and that, with the cover layer separated from the electrode, supports a piezoelectric-substrate-side surface of the cover layer; anda connector that is provided on the piezoelectric-substrate-side surface of the cover layer and that joins the cover layer and the support to each other; whereinat least a portion of a cover-layer-side end portion of the support exists in the connector; anda dimension of the connector in a normal direction to the one principal surface is less than a dimension of the support in the normal direction.2. The surface acoustic wave device according to claim 1 , wherein a Young's modulus of a material of the support is less than or equal to a Young's modulus of a material ...

SWITCHABLE FILTERS AND DESIGN STRUCTURES

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes. 1. A method comprising:determining a frequency of a filter or need to have the filter activated; andturning on one or more filters by actuating a MEMS beam by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes, in response to the determining.2. The method of claim 1 , wherein the filter is a SAW filter.3. The method of claim 1 , wherein the filter is a BAW filter.4. The method of claim 1 , wherein the MEMS beam is one of a cantilever beam and a bridge beam.5. The method of claim 1 , wherein the MEMS beam is positioned over the interleaved electrodes formed on an underlying insulator layer. The invention relates to semiconductor structures and methods of manufacture and, more particularly, to switchable and/or tunable filters, methods of manufacture and design structures.SAW (surface acoustic wave) filters play a key role in telecommunications. For example, SAW filters are widely used as bandpass and spectrum-shaping filters in mobile and wireless applications. Other applications for SAW filters include wide area networks (WAN), wireless local area network (WLAN) communications, cordless phones, pagers and satellite communications. SAW filters are preferable to conventional LC filters as they are much smaller, cheaper and more ...

SWITCHABLE FILTERS AND DESIGN STRUCTURES

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes. 1. A method performed in a computer-aided design system for generating a functional design model of a tunable filter structure , the method comprising:generating a functional representation of at least one filter comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate; andgenerating a function representation of a beam structure positioned to turn on the at least one filter by moving the MEMS beam such that electrodes become interleaved in contact with the at least one piezoelectric substrate or the at least one piezoelectric substrate becomes sandwiched between the electrodes.2. The method of claim 1 , wherein the functional representation of the beam structure is a MEMS beam with the interleaved electrodes formed within an opening thereof claim 1 , on a same level as the MEMS beam.3. The method of claim 2 , wherein the functional representation of the beam structure is positioned over the interleaved electrodes formed on an underlying insulator layer.4. The method of claim 2 , further comprising generating a functional representation of portions of the interleaved electrodes are formed on a same level as the beam structure and an underlying insulator layer.5. The method of claim 2 , wherein the functional representation of the at least one piezoelectric substrate is provided ...

Surface acoustic wave device

A surface acoustic wave device includes a piezoelectric substrate, functional elements on the piezoelectric substrate, a cover portion that opposes the piezoelectric substrate with a support layer interposed therebetween, and an input/output terminal on the cover portion. At least a portion of the functional elements includes an interdigital transducer electrode, and a surface acoustic wave resonator is defined by the piezoelectric substrate and the IDT electrode. The functional elements include a filter that passes a signal in a predetermined frequency band, and a cancel circuit which is connected in parallel to the filter and attenuates a signal outside the predetermined frequency band in signals output from the output terminal. A portion of a wiring pattern connecting a first functional element and a second functional element included in the plurality of functional elements is provided on the cover portion.

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side. 1. A device comprising:a silicon substrate including a first face and a second face on a side opposite to the first face;a first electrode formed on the first face of the silicon substrate;a second electrode formed on the first face of the silicon substrate;an integrated circuit being electrically connected to the first electrode and the second electrode;a rear face electrode formed on the second face of the silicon substrate;a groove portion formed in the silicon substrate;an insulating film formed on side walls of the groove portion;a conductive portion formed inside the groove portion on the insulating portion, the conductive portion being electrically connected to the second electrode and the rear face electrode;a second silicon substrate including a second silicon substrate first face and a second silicon substrate second face on a side opposite to the second semiconductor first face; andan electronic element formed on the first face of the second silicon substrate, the electronic element being electrically connected to the rear face electrode;wherein the integrated circuit is configured to apply a voltage to the electronic element via the second electrode and conductive portion; andwherein the first electrode, the integrated circuit, the second electrode, the conductive portion, the rear face electrode and the electronic element are electrically connected in that ...

Surface acoustic wave device package and method of manufacturing the same

The present invention relates to a surface acoustic wave device package and a method of manufacturing the same, and more specifically, to a method of manufacturing a miniaturized surface acoustic wave device package.

Acoustic wave device, acoustic wave device package, radio-frequency front-end circuit, and communication device

An acoustic wave device includes a silicon oxide film, a piezoelectric body, and an interdigital transducer electrode laminated on a support substrate made of silicon. Where a wave length that is determined by an electrode finger pitch of the interdigital transducer electrode is λ, a thickness of the support substrate is greater than or equal to about 3λ. An acoustic velocity of the first higher mode that propagates through the piezoelectric body is an acoustic velocity V si =(V 1 ) 1/2 of bulk waves that propagate in the support substrate, which is determined by V 1 out of solutions V 1 , V 2 , and V 3 of x derived from the mathematical expression Ax 3 +Bx 2 +Cx+D=0, or higher than V si .

Photosensitive resin composition, photosensitive film, rib pattern formation method, hollow structure and formation method for same, and electronic component

Disclosed is a photosensitive resin composition having excellent resistance to moist heat, excellent hollow structure maintenance and the cured product of which has a high modulus of elasticity at high temperature. Further disclosed are an electronic component, a hollow structure and a formation method for the same, a rib pattern formation method, and a photosensitive film using the composition. The disclosed photosensitive resin composition, which can be used as a cover material or a rib material for forming a hollow structure in an electronic component having a hollow structure, contains a photopolymerisable compound (A) having at least one ethylenically unsaturated group, and a photopolymerisation initiator (B). Also disclosed is a photosensitive film which can be obtained from the photosensitive resin composition. An acrylate compound or a methacrylate compound, specifically an acrylate compound or a methacrylate compound containing an amide group, or, an acrylate compound or a methacrylate compound containing an urethane bond is used for component (A).

电子器件及其制造方法、盖体、电子设备以及移动体

电子器件及其制造方法、盖体、电子设备以及移动体。本发明提供能够容易地进行腔体内的脱气和密封的电子器件的制造方法。该制造方法在底座（91）与作为盖体的盖（92）之间形成内部空间（14）的同时，接合底座和盖，该制造方法具有以下工序：准备盖的工序，其中，盖的背面（92b）具有将内部空间与外部连通的槽（94）；在内部空间（14）内收纳作为电子部件的陀螺元件（2）的工序；第1接合工序，通过缝焊来接合底座与盖的接合预定部位的除了与槽对应的部分以外的部位；以及第2接合工序，通过激光（98）的焊接来接合该接合预定部位的包含槽的外部侧的端部在内的部位，封闭槽。

感光性树脂组合物、感光性树脂片、中空结构的制造方法及电子部件

本发明的感光性树脂组合物为含有碱溶性聚酰亚胺(a)、含有不饱和键的化合物(b)、热交联性化合物(c)、具有下述通式(1)所示的结构并且具有光漂白性的光聚合引发剂(d‑1)、和具有下述通式(1)所示的结构并且波长405nm下的摩尔吸光系数为1000L/(mol·cm)以上的光聚合引发剂(d‑2)的感光性树脂组合物。(在通式(1)中，R 1 表示卤原子、羟基、羧基、硝基、氰基、‑NR 3 R 4 、碳原子数1～20的1价烃基、碳原子数1～20的酰基或碳原子数1～20的烷氧基，R 3 和R 4 各自独立地表示氢原子或碳原子数1～10的烷基。其中，烃基、酰基和烷氧基的氢原子的至少一部分可以被卤原子、羟基、羧基、硝基、氰基或‑NR 3 R 4 取代，烃基中、酰基中和烷氧基中的烃基可以被醚键、硫醚键、酯键、硫酯键、酰胺键或氨基甲酸酯键中断。R 2 表示碳原子数1～5的烷基。式中的＊是指在＊部分与相邻的基团结合。)进一步，本发明的感光性树脂组合物为含有碱溶性聚酰亚胺(a)、含有不饱和键的化合物(b)、热交联性化合物(c)、2种以上肟酯系光聚合引发剂(d)的感光性树脂组合物。本发明的感光性树脂组合物可以将中空结构体的盖部分高灵敏度并且良好地通过光刻进行图案形成。使用了本发明的感光性树脂组合物的感光性树脂片在具有中空结构体的电子部件的中空结构体的盖用途中是有用的。

弹性波装置

本发明提供一种难以产生压电薄膜的破裂或缺损，并且难以产生特性的恶化的弹性波装置。弹性波装置(1)在支撑基板(2)上设置多层膜(3)，多层膜(3)包含：压电薄膜(6)、和压电薄膜(6)以外的层，设置被设置在压电薄膜(6)的一面的IDT电极(7)，具备与IDT电极(7)电连接的外部连接端子，俯视下，在设置有IDT电极(7)的区域的外侧的区域，多层膜(3)被局部除去，在多层膜(3)被除去的区域的至少一部分，还具备设置在支撑基板(2)上的第1绝缘层(10、11)。

Pacage method for surface elastic wave element

Electronic component element and composite module including the same

電子部品素子において発熱した熱の放熱効果を向上させ、圧電基板に作用する収縮応力を緩和することにより、電子部品素子の特性が変化することを防止した電子部品素子を提供する。この発明にかかる電子部品素子は、圧電基板１２を含む。圧電基板１２の一方主面１２ａ上には櫛歯電極２０が形成される。櫛歯電極の周囲には支持層１４が形成される。支持層１４と櫛歯電極２０とを覆うようにカバー層１６が配置される。カバー層１６を貫通し、櫛歯電極にビアホール電極１８ａ，１８ｂが接続される。カバー層１４における櫛歯電極２０と対向する主面とは反対側の主面に凹凸部３０が形成される。 An electronic component element is provided in which the heat dissipation effect of heat generated in the electronic component element is improved and the contraction stress acting on the piezoelectric substrate is alleviated to prevent the characteristics of the electronic component element from changing. The electronic component element according to the present invention includes a piezoelectric substrate 12. A comb electrode 20 is formed on one main surface 12 a of the piezoelectric substrate 12. A support layer 14 is formed around the comb electrodes. The cover layer 16 is disposed so as to cover the support layer 14 and the comb electrode 20. Via hole electrodes 18a and 18b are connected to the comb electrodes through the cover layer 16. An uneven portion 30 is formed on the main surface of the cover layer 14 opposite to the main surface facing the comb electrode 20.

Surface acoustic wave filter device

Package structure of saw device or the like

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Surface acoustic wave device, package thereof and manufacturing method thereof

Surface acoustic wave device and branching filter

본 발명은 송수신용의 분파기에 사용되며, 상대측의 감쇠량이 큰 탄성표면파 장치 및 그것을 이용한 분파기를 제공하는 것을 목적으로 한다. SUMMARY OF THE INVENTION An object of the present invention is to provide a surface acoustic wave device having a large amount of attenuation on the other side and a splitter using the same, which is used in a splitter for transmitting and receiving. 본 발명의 구성에 따르면, 입출력용의 각 신호단자(17a, 17b)를 대각선상의 각 모서리부에 각각 갖는, 수신측의 탄성표면파 디바이스(22)를 형성한다. 입출력용의 각 신호단자(17h, 17i)를 한 변부 위의 각 단(모서리)부에 각각 갖는, 송신측의 탄성표면파 디바이스(23)를 형성한다. 회로기판(21) 위에 각 탄성표면파 디바이스(22, 23)를, 각 신호단자(17a, 17i)를 서로 근접시켜서, 안테나측의 배선 패턴(21a)에 접속해서 형성한다. According to the structure of this invention, the receiving surface acoustic wave device 22 which has each signal terminal 17a, 17b for input / output is formed in each corner part on a diagonal line. A surface acoustic wave device 23 on the transmission side is formed, each having signal terminals 17h and 17i for input / output, at each end (edge) on one side. The surface acoustic wave devices 22 and 23 are formed on the circuit board 21 by connecting the signal terminals 17a and 17i to each other and connecting them to the wiring pattern 21a on the antenna side.

High frequency module

Surface acoustic wave device

Disclosed is a surface acoustic wave device comprising a base substrate, first and second surface acoustic wave filters mounted on the surface of the base substrate, and a sealing body formed on the surface of the base substrate and covering the first and second surface acoustic wave filters. The first and second surface acoustic wave filters respectively have a first and a second piezoelectric substrate. The second piezoelectric substrate is separated from the first piezoelectric substrate by an air gap. This surface acoustic wave device is reduced in intermodulation between the surface acoustic wave filters.

A Stack Type Surface Acoustic Wave Package and Fabrication Method Thereof

적층형 표면탄성파 패키지를 제공한다. Provided is a laminated surface acoustic wave package. 본 발명은 복수의 전극이 형성된 제 1베어칩 ; 복수의 전극과 비어홀이 형성된 제 2베어칩 ; 상기 제 1베어칩의 전극과 상기 제 2베어칩의 전극이 서로 대향하도록 상기 제 2베어칩의 상부면에 상기 제 1베어칩을 전기적으로 연결하는 연결부 ; 및 상기 제 1,2베어칩사이의 동작면에 기밀공간을 형성하도록 상기 제 1,2베어칩상에 구비되는 밀봉부 ; 를 포함한다. The present invention is a first bare chip formed with a plurality of electrodes; A second bare chip having a plurality of electrodes and via holes formed therein; A connection part electrically connecting the first bare chip to an upper surface of the second bare chip such that an electrode of the first bare chip and an electrode of the second bare chip face each other; And a sealing part provided on the first and second bare chips to form an airtight space on an operation surface between the first and second bare chips. It includes. 본 발명에 의하면, 패키징시 외부의 열충격에 의한 변형을 방지하여 제품의 신뢰성을 높일 수 있고, 제품의 소형화추세에 맞추어 완제품의 사이즈를 최소화하고, 구성부품수및 재료비를 줄여 제조원가를 절감할 수 있다. According to the present invention, it is possible to increase the reliability of the product by preventing deformation due to external thermal shock during packaging, to minimize the size of the finished product in accordance with the trend of miniaturization of the product, and to reduce the manufacturing cost by reducing the number of components and materials costs . 표면탄성파, 베어칩, 압전단 결정, 금속댐, 수지필름, 금속층 Surface acoustic wave, bare chip, piezoelectric crystal, metal dam, resin film, metal layer

Surface acoustic wave filter device

본 발명의 탄성표면파 장치는 제 1 및 제 2의 2포트 탄성표면파 필터(100, 200)와, 단일한 인터디지털 변환기를 갖는 1포트 탄성표면파 필터(300)를 구비한 탄성표면파 소자가 외관용기(500)에 형성된 전극에 범프를 통하여 페이스 다운 본딩방식으로 접속되고, 여기에서 외관용기(500)는 1포트 탄성표면파 필터(300)와 대향하는 부분에 접지용 단자 전극의 개구부를 갖는 것을 특징으로 한다.

Sonic surface wave device and wave separator

本发明提供一种声表面波装置及使用它的分波器，在对角线上的各转角部上分别设置具有输入输出用的各信号端子(17a、17b)的接收侧的声表面波器件(22)。在一边部上的各端(转角)部上分别设置具有输入输出用的各信号端子(17h、17i)的发送侧的声表面波器件(23)。在电路基板(21)上设置各声表面波器件(22、23)，使各信号端子(17a、17i)相互接近并与天线侧的配线图形(21a)连接。这种声表面波装置用于发送接收用的分波器、并使相对侧的衰减量增大。

Acoustic wave device and its manufacturing method

本发明提供一种能够谋求更进一步的小型化的弹性波装置。弹性波装置(1)具备：压电基板(2)；功能电极(3)，设置在压电基板(2)上；支承层(5)，具有框状的形状，设置在压电基板(2)上，并设置为包围功能电极(3)；以及覆盖构件(6)，设置在支承层(5)上，并设置为对支承层(5)的开口部进行密封，覆盖构件(6)具有作为支承层(5)侧的主面的第一主面(6A)和第一主面(6A)的相反侧的第二主面(6B)。在覆盖构件(6)形成有在第二主面(6B)开口的凹部(6c)。形成有过孔(7)，形成为贯通支承层(5)，进而到达覆盖构件(6)的凹部(6c)的底面，并具有在该底面开口的开口部(7a)。过孔(7)的开口部(7a)的面积为覆盖构件(6)的凹部(6c)的底面的面积以下。还具备：第一过孔导体部(8a)，设置在过孔(7)；以及第二过孔导体部(8b)，设置在覆盖构件(6)的凹部(6c)。

Method of packaging surface acoustic wave device

본 발명은, 기판 상에 표면 탄성파(SAW) 필터 칩을 탑재하는 단계와, 상기 기판과 상기 SAW 필터 칩 사이의 공간에 언더필을 형성하는 단계와, 스프레이 방식을 이용하여 상기 SAW 필터 칩의 외곽부 전체에 금속차폐층을 형성하는 단계와, 상기 금속차폐층 상에 수지류로 몰딩하는 단계를 포함하는 SAW 필터 칩 패키지 제조방법을 제공한다. 본 발명에서는, 스프레이노즐을 이용하여 도전성 에폭시로 금속차폐층을 형성함으로써 스텝 커버리지 개선을 위한 휠렛형성공정을 생략할 수 있으며, 탑 몰딩방식을 이용하여 패키지의 제품외형을 형성함으로써 산화방지층 없이 단일한 층의 금속차폐층만을 형성하는 한편, 구조적으로 견고한 SAW 필터 패키지를 제조할 수 있는 잇점이 있다. According to the present invention, a surface acoustic wave (SAW) filter chip is mounted on a substrate, an underfill is formed in a space between the substrate and the SAW filter chip, and a spray method is used to form an outer portion of the SAW filter chip. It provides a SAW filter chip package manufacturing method comprising the step of forming a metal shielding layer on the whole, and molding the resin on the metal shielding layer. In the present invention, by forming a metal shielding layer with a conductive epoxy using a spray nozzle, it is possible to omit the wheellet forming process for improving step coverage, and by forming the product appearance of the package using the top molding method without a single layer without the antioxidant layer While only forming a layer of metal shielding layer, there is an advantage in producing a structurally robust SAW filter package.

Elastic wave device

電極指の線幅がばらついたとしても、減衰特性のばらつきが生じ難い弾性波装置を提供する。第１〜第３のＩＤＴ１１〜１３を有する縦結合共振子型弾性表面波フィルタ４と、弾性表面波共振子５からなる並列トラップとを備えている。圧電基板上において弾性表面波伝搬方向に直交する方向に延びる第２のＩＤＴ１２の中心軸に対して縦結合共振子型弾性表面波フィルタ４の両側が非対称とされており、弾性表面波共振子５のＩＤＴ１６のデューティー比をＤ０とし、第１〜第３のＩＤＴ１１〜１３のデューティー比をＤ１〜Ｄ３としたときに、デューティー比Ｄ０が、デューティー比Ｄ１〜Ｄ３のうちの最大のデューティー比と、最小のデューティー比との間の大きさである、弾性波装置１。 Provided is an elastic wave device in which variation in attenuation characteristics hardly occurs even if the line width of electrode fingers varies. A longitudinally coupled resonator type surface acoustic wave filter 4 having first to third IDTs 11 to 13 and a parallel trap including a surface acoustic wave resonator 5 are provided. Both sides of the longitudinally coupled resonator type surface acoustic wave filter 4 are asymmetric with respect to the central axis of the second IDT 12 extending in a direction orthogonal to the surface acoustic wave propagation direction on the piezoelectric substrate, and the surface acoustic wave resonator 5 When the duty ratio of the IDT 16 is D0 and the duty ratios of the first to third IDTs 11 to 13 are D1 to D3, the duty ratio D0 is the maximum duty ratio among the duty ratios D1 to D3 and the minimum The elastic wave device 1 having a size between the duty ratio of the elastic wave device 1.

Surface acoustic wave device

Acoustic wave device

본 발명은 압전소자 디바이스에 관한 것으로, 보다 상세하게는 기판, 상기 기판 상에 배치된 IDT, 상기 기판 상에 배치되고, 상기 IDT와 전기적으로 연결되는 접속 전극, 상기 기판 상에서 상기 IDT가 포함되는 중공부(cavity)가 발생하도록 상기 IDT 외곽에 형성되는 측벽, 상기 측벽의 상부에 형성되는 덮개, 상기 측벽 또는 상기 덮개를 관통하거나, 상기 측벽의 내주면 또는 외주면을 따라 형성되고, 상기 접속 전극과 전기적으로 연결되는 접속 단자 및 상기 덮개의 상부에서 상기 접속 단자와 중첩하지 않도록 형성되는 보강층을 포함하고, 상기 보강층의 면적은 상기 덮개의 면적의 50% 이하인 압전소자 디바이스에 관한 것이다. The present invention relates to a piezoelectric element device, and more particularly, to a piezoelectric element device that includes a substrate, an IDT disposed on the substrate, a connection electrode disposed on the substrate and electrically connected to the IDT, A side wall formed on the outer side of the IDT so as to generate a cavity, a cover formed on the side wall, a through hole penetrating the side wall or the cover, or formed along the inner circumferential surface or the outer circumferential surface of the side wall, And a reinforcing layer formed so as not to overlap with the connection terminal at an upper portion of the lid, wherein the area of the reinforcing layer is 50% or less of the area of the lid.

Electronic component, and electronic component module

모듈 수지 성형시의 압력에 의한 중공 구조의 변형을 억제하는 중공 구조를 갖는 전자 부품을 제공한다. 소자 기판(2)과, 소자 기판(2)의 한쪽 주면 상에 형성된 구동부(3)와, 구동부(3)의 주위에 중공 공간(8)을 형성하도록 구동부(3)를 덮는 보호부(4)와, 보호부(4) 상부에 배치된 수지로 이루어지는 접착층(10)과, 접착층(10) 상에 배치된 보강판(11)을 구비하고, 보강판(11)이 규소 기판인 구성으로 했다. An electronic component having a hollow structure for suppressing deformation of a hollow structure due to pressure at the time of module resin molding is provided. A protective portion 4 covering the driving portion 3 so as to form a hollow space 8 around the driving portion 3; a driving portion 3 formed on one principal surface of the element substrate 2; And a reinforcing plate 11 disposed on the adhesive layer 10 and the reinforcing plate 11 is a silicon substrate as shown in FIG.

ELECTRICAL COMPONENT, COMPONENT GROUP OR INTEGRATED CIRCUIT, THE ACTIVE PART OF WHICH IS BROUGHT UP ON A METAL CARRIER, AND METHOD FOR THE PRODUCTION THEREOF

Surface acoustic wave device

(57)【要約】 【課題】 弾性表面波装置に、簡単な構成で、外部電界 に対してシールド効果を持たせるようにする。 【解決手段】 弾性表面波素子１の第１の面上には、交 叉指状電極２と入出力電極３がアルミ薄膜により形成さ れている。第１の面の端面とその面に対向する第２の面 は、アルミ薄膜で覆われている。そして、さらにその外 側、および弾性表面波素子１の第１の面の端面は、１枚 の導電性フィルム３２により覆われ、導電性フィルム３ ２はプリント基板３６上に形成された接地電極３５に電 気的、および物理的に接続される。これにより、弾性表 面波素子１を外部電界に対してシールドすることができ る。

Surface acoustic wave device and method of manufacturing device

一种生产能够容易地提供密封性并适合于倒装片键合的小表面安装型声表面波器件的方法，包含以下步骤：将声表面波器件进行倒装片式键合，用作在移动通讯领域中处理大约几GHz高频的分支滤波器，在压电基片的前表面相对底部基片的状态下，从压电基片的后表面上侧放射第一密封微粒成分从而将第一密封成分粘合于压电基片的后表面，以及从压电基片的端部到底部基片悬挂第一密封成分以形成桥接，从而在第一密封成分上形成用于安装的第二密封成分。

Surface acoustic wave device