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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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05-01-2012 дата публикации

Magnetic storage element and magnetic memory

Номер: US20120001281A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Yutaka Higo
Принадлежит: Sony Corp

Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.

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Номер записи: 1
05-01-2012 дата публикации

CPP-Type Magnetoresistive Element Including Spacer Layer

Номер: US20120002330A1
Автор: Hironobu Matsuzawa, Yoshihiro Tsuchiya
Принадлежит: TDK Corp

An MR element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and second ferromagnetic layers. The spacer layer includes a nonmagnetic metal layer, a first oxide semiconductor layer, and a second oxide semiconductor layer that are stacked in this order. The nonmagnetic metal layer is made of Cu, and has a thickness in the range of 0.3 to 1.5 nm. The first oxide semiconductor layer is made of a Ga oxide semiconductor, and has a thickness in the range of 0.5 to 2.0 nm. The second oxide semiconductor layer is made of a Zn oxide semiconductor, and has a thickness in the range of 0.1 to 1.0 nm.

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Номер записи: 2
05-01-2012 дата публикации

Storage apparatus

Номер: US20120002466A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Yutaka Higo
Принадлежит: Sony Corp

Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device.

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Номер записи: 3
06-06-2019 дата публикации

Конструкция преобразователя магнитного поля на основе наноструктур, обладающих гигантским магниторезистивным эффектом

Номер: RU0000189844U1
Автор: Владимир Викторович Амеличев, Дмитрий Андреевич Жуков, Дмитрий Валентинович Костюк, Дмитрий Вячеславович Васильев, Евгений Павлович Орлов, Петр Алексеевич Беляков, Юрий Владимирович Казаков
Принадлежит: Российская Федерация, от имени которой выступает Федеральное государственное казенное учреждение "Войсковая часть 68240"

Полезная модель относится к микроэлектронике и может быть использована в конструкциях датчиков магнитного поля и магнитополупроводниковых микросистем.Конструкция преобразователя магнитного поля на основе наноструктур, обладающих гигантским магниторезистивным эффектом, содержит кристалл 1 и четыре магниторезистора, выполненных на поверхности кристалла, соединенных слоем алюминия в мостовую схему Уинстона с расположением активных плеч 2 между двумя концентраторами магнитного поля 3 из магнитомягкого материала и опорных плеч 4, расположенных под экранами 5. Концентраторы магнитного поля 3 размещены в заглублениях 6, выполненных в кристалле 1. Вдоль концентраторов магнитного поля 3 размещены экраны 5, выполненные из магнитомягкого материала. На обратной стороне кристалла 1 дополнительно установлен магнит 7 с расположением полюсов магнита под концентраторами магнитного поля 3. Магниторезисторы выполнены из многослойных тонкопленочных наноструктур с гигантским магниторезистивным эффектом.Технический результат, получаемый при реализации заявляемой полезной модели, выражается в обеспечении возможности определения направления вектора магнитного поля за счет формирования нечетной выходной характеристики преобразователя магнитного поля с сохранением чувствительности преобразователя магнитного поля без увеличения энергопотребления. 1 з.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 189 844 U1 (51) МПК H01L 43/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 43/00 (2018.08) (21)(22) Заявка: 2018139669, 08.11.2018 (24) Дата начала отсчета срока действия патента: Дата регистрации: 06.06.2019 (73) Патентообладатель(и): Российская Федерация, от имени которой выступает федеральное государственное казенное учреждение "Войсковая часть 68240" (RU) (45) Опубликовано: 06.06.2019 Бюл. № 16 Адрес для переписки: 107031, Москва, Войсковая часть 1125 1 8 9 8 4 4 R U 2568148 C1, 10.11.2015. RU 2636141 C1, 20.11.2017. ...

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Номер записи: 4
19-01-2012 дата публикации

Magnetic memory

Номер: US20120012955A1
Автор: Hiroyuki Yamamoto, Jun Hayakawa, Katsuya Miura, Kenchi Ito
Принадлежит: HITACHI LTD

Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression M s 2 (t/w)>|J ex |>(2k B TΔ)/S, in which k B is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and M s are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and J ex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.

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Номер записи: 5
16-02-2012 дата публикации

Magnetic tunneling junction device and its manufacturing method

Номер: US20120038011A1
Автор: Yoshihisa Iba
Принадлежит: Fujitsu Semiconductor Ltd

A magnetic pinned layer is formed over a substrate. An insulating film is formed over the magnetic pinned layer. A recess is formed in and through the insulating film. A tunneling insulating film is formed over a bottom of the recess. A first magnetic free layer is formed over the bottom of the recess via the tunneling insulating film. A second magnetic free layer is formed over the insulating film and made of a same material as the first magnetic free layer. A non-magnetic film is formed on sidewalls of the recess, extending from the first magnetic free layer to the second magnetic free layer and made of oxide of the material of the first magnetic free layer. An upper electrode is disposed over the first magnetic free layer, non-magnetic film and second magnetic free layer, and electrically connected to the first magnetic free layer and second magnetic free layer.

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Номер записи: 6
16-02-2012 дата публикации

Method to fabricate thin metal via interconnects on copper wires in mram devices

Номер: US20120040531A1
Автор: Guomin Mao
Принадлежит: MagIC Technologies Inc

A scheme for forming a thin metal interconnect is disclosed that minimizes etch residues and provides a wet clean treatment for via openings. A single layer interlayer dielectric (ILD), BARC, and photoresist layer are successively formed on a substrate having a copper layer that is coplanar with a dielectric layer. In one embodiment, the ILD is silicon nitride with 100 to 600 Angstrom thickness. After a via opening is formed in a photoresist layer above the copper layer, a first RIE process including BARC main etch and BARC over etch steps is performed. Then a second RIE step transfers the opening through the ILD to uncover the copper layer. Photoresist and BARC are stripped with oxygen plasma and a low DC bias. Wet cleaning may involve a first ST250 treatment, ultrasonic water treatment, and then a third ST250 treatment. A bottom electrode layer may be deposited in the via opening.

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Номер записи: 7
08-03-2012 дата публикации

Semiconductor memory device and manufacturing method thereof

Номер: US20120056253A1
Автор: Hiroyuki Kanaya, Masayoshi IWAYAMA
Принадлежит: Toshiba Corp

A semiconductor memory device according to the present embodiment includes a semiconductor substrate, a select transistor, a lower electrode, a magnetic tunnel junction element, a first protection film, an upper electrode, and a second protection film. The select transistor is formed on the semiconductor substrate. The lower electrode is electrically connected to one diffusion layer of the select transistor. The magnetic tunnel junction element is provided on the lower electrode. The first protection film is provided on a side surface of the magnetic tunnel junction element. The upper electrode is provided on the magnetic tunnel junction element and the first protection film. The second protection film is provided on side surfaces of the upper electrode, the first protection film, and the lower electrode.

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Номер записи: 8
15-03-2012 дата публикации

Storage element and memory device

Номер: US20120061780A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Yutaka Higo
Принадлежит: Sony Corp

Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer.

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Номер записи: 9
15-03-2012 дата публикации

Memory element and memory device

Номер: US20120063221A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Yutaka Higo
Принадлежит: Sony Corp

There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.

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Номер записи: 10
15-03-2012 дата публикации

Memory element and memory device

Номер: US20120063222A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Yutaka Higo
Принадлежит: Sony Corp

There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and a Ta film is formed in such a manner that comes into contact with a face, which is opposite to the insulating layer side, of the magnetization-fixed layer.

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Номер записи: 11
22-03-2012 дата публикации

Non-uniform switching based non-volatile magnetic based memory

Номер: US20120068236A1
Автор: Mahmud Assar, Parviz Keshtbod, Petro Estakhri, Rajiv Yadav Ranjan
Принадлежит: Avalanche Technology Inc

A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

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Номер записи: 12
22-03-2012 дата публикации

Spin torque transfer memory cell structures and methods

Номер: US20120069646A1
Автор: Gurtej S. Sandhu, Stephen J. Kramer
Принадлежит: Micron Technology Inc

Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material and a multiferroic material in contact with the ferromagnetic storage material, wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are located between a first electrode and a second electrode.

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Номер записи: 13
29-03-2012 дата публикации

Spin-valve or tunnel-junction radio-frequency oscillator, process for adjusting the frequency of such an oscillator and network consisting of a plurality of such oscillators

Номер: US20120075031A1
Автор: Bernard Dieny, Liliana Prejbeanu, Marie-Claire Cyrille, Ursula Ebels
Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA, Institut Polytechnique de Grenoble

A radio-frequency oscillator incorporates a magnetoresistive device within which an electron current is able to flow. The device includes a stack including: a magnetic trapped layer, the magnetization of which is of substantially fixed direction; a magnetic free layer; and a non-magnetic intermediate layer-interposed between the free layer and the trapped layer. The oscillator also includes a mechanism capable of making an electron current flow in the layers constituting the stack and in a direction perpendicular to the plane which contains the layers. At least the free layer is devoid of any material at its center. The electron current density flowing through the stack is capable of generating a magnetization in the free layer in a micromagnetic configuration in the shape of a skewed vortex flowing in the free layer around the center of the free layer.

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Номер записи: 14
05-04-2012 дата публикации

Semiconductor storage device

Номер: US20120081952A1
Автор: Kenchi Ito, Kiyoo Itoh, Riichiro Takemura, Takayuki Kawahara
Принадлежит: HITACHI LTD

To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is supplied with a current required for writing. In this manner, even when the same information is sequentially written on the memory cell, since the currents in the two directions are caused to flow in pairs in the tunnel magnetoresistive element of the memory cell each time information is rewritten, deterioration of a film that forms the tunnel magnetoresistive element can be suppressed. Therefore, reliability of the SPRAM can be improved.

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Номер записи: 15
03-05-2012 дата публикации

High speed low power magnetic devices based on current induced spin-momentum transfer

Номер: US20120103792A1
Автор: Andrew Kent, Daniel L. Stein, Jean-Marc Beaujour
Принадлежит: New York University NYU

A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The mapetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially nonzero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.

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Номер записи: 16
03-05-2012 дата публикации

Magnetic tunnel junction cells having perpendicular anisotropy and enhancement layer

Номер: US20120104522A1
Автор: Wonjoon Jung, Yuankai Zheng, Zheng Gao
Принадлежит: SEAGATE TECHNOLOGY LLC

A magnetic tunnel junction cell that includes a ferromagnetic free layer; an enhancement layer having a thickness of at least about 15 Å; an oxide barrier layer; and a ferromagnetic reference layer, wherein the enhancement layer and the oxide barrier layer are positioned between the ferromagnetic reference layer and ferromagnetic free layer and the oxide barrier layer is positioned adjacent the ferromagnetic reference layer, and wherein the ferromagnetic free layer, the ferromagnetic reference layer, and the enhancement layer all have magnetization orientations that are out-of-plane

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Номер записи: 17
24-05-2012 дата публикации

Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same

Номер: US20120127603A1
Автор: Chando Park, Chang-Man Park, Liubo Hong, Richard Hsiao, Sangmun Oh, Zheng Gao
Принадлежит: Hitachi Global Storage Technologies Netherlands BV

According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.

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Номер записи: 18
31-05-2012 дата публикации

Method of Fabricating Semiconductor Device and Apparatus for Fabricating the Same

Номер: US20120135544A1
Автор: Heeju Shin, Jangeun Lee, Junho Jeong, Sechung Oh, Woojin Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference pattern which are stacked on the substrate, performing a magnetic thermal treatment process on the magnetic memory patterns, and forming a passivation layer on the magnetic memory patterns. The magnetic thermal treatment process and the forming of the passivation layer are simultaneously performed in one reactor.

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Номер записи: 19
07-06-2012 дата публикации

Magnetoresistive effect element and method of manufacturing magnetoresistive effect element

Номер: US20120139019A1
Автор: Yoshihisa Iba
Принадлежит: Fujitsu Semiconductor Ltd

A method of manufacturing a magnetoresistive effect element includes forming a first electrode above a substrate, forming a metal layer of a metal material above the first electrode, forming a first magnetic layer above the metal layer, forming a tunnel insulating film above the first magnetic layer, forming a second magnetic layer above the tunnel insulating film, forming a second electrode layer above the second magnetic layer, patterning the second electrode layer, patterning the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer, while depositing sputtered particles of the metal film on side walls of the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer to form a sidewall metal layer, and oxidizing the sidewall metal layer to form an insulative sidewall metal oxide layer.

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Номер записи: 20
28-06-2012 дата публикации

Magnetic tunnel junction device

Номер: US20120161262A1
Автор: Shinji Yuasa
Принадлежит: JAPAN SCIENCE AND TECHNOLOGY AGENCY, National Institute of Advanced Industrial Science and Technology AIST

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

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Номер записи: 21
28-06-2012 дата публикации

Current perpendicular to plane (CPP) magnetoresistive sensor having dual composition hard bias layer

Номер: US20120161263A1
Автор: Alexander M. Zeltser, Stefan Maat
Принадлежит: Individual

A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has a dual composition hard bias layer structure that is used to longitudinally bias the sensor's free ferromagnetic layer. The dual composition hard bias layer structure is composed of first layer of CoPt, having high anisotropy compared to the second layer. The second layer, composed of CoFe, has a higher magnetization compared to the first layer. The resulting dual hard bias layer structure exhibits high values of coercivity and squareness while maintaining a reduced sensor thickness compared to sensors of the prior art.

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Номер записи: 22
05-07-2012 дата публикации

Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories

Номер: US20120170362A1
Автор: David Druist, Dmytro Apalkov, Steven M. Watts, Vladimir Nikitin
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.

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Номер записи: 23
12-07-2012 дата публикации

Storage element and storage device

Номер: US20120175716A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Tetsuya Asayama, Yutaka Higo
Принадлежит: Sony Corp

A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, the storage layer is directly provided with a layer at a side opposite to the insulating layer, and this layer includes a conductive oxide.

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Номер записи: 24
09-08-2012 дата публикации

Mtj film and method for manufacturing the same

Номер: US20120199470A1
Автор: Eiji Kariyada, Kaoru Mori, Katsumi Suemitsu, Norikazu Ohshima
Принадлежит: Renesas Electronics Corp

A method for manufacturing an MTJ film includes forming a first ferromagnetic layer; forming a tunnel barrier layer over the first ferromagnetic layer; and forming a second ferromagnetic layer over the tunnel barrier layer. The first ferromagnetic layer is a Co/Ni stacked film having perpendicular magnetic anisotropy. The step for forming a tunnel barrier layer includes repeating unit film formation treatment n times (n is an integer of 2 or more). The unit film formation treatment includes the steps of: depositing an Mg film by a sputtering method; and oxidizing the deposited Mg film. A film thickness of the deposited Mg film in the first unit film formation treatment is 0.3 nm or more and 0.5 nm or less. A film thickness of the deposited Mg film in the second unit film formation treatment or later is 0.1 nm or more and 0.45 nm or less.

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Номер записи: 25
16-08-2012 дата публикации

Magnetic tunnel junction device

Номер: US20120205762A1
Автор: Akihiro Odagawa, Akio Matsushita, Nozomu Matsukawa
Принадлежит: Panasonic Corp

The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.

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Номер записи: 26
16-08-2012 дата публикации

Non-volatile magnetic memory with low switching current and high thermal stability

Номер: US20120205763A1
Автор: Parviz Keshtbod, Rajiv Yadav Ranjan
Принадлежит: Avalanche Technology Inc

A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.

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Номер записи: 27
23-08-2012 дата публикации

Magnetic memory and manufacturing method thereof

Номер: US20120211811A1
Автор: Eiji Kariyada, Kiyokazu Nagahara
Принадлежит: Renesas Electronics Corp

A magnetic memory has a magnetic recording layer, a reference layer connected via a non-magnetic layer to the magnetic recording layer, first and second magnetization pinning layers disposed below the magnetic recording layer. The magnetic recording layer and the reference layer have a perpendicular magnetic anisotropy. The magnetic recording layer has a magnetization reversal region having a reversible magnetization and overlapping the difference layer, a first magnetization pinned region connected to a first boundary of the magnetization reversal region with the direction of the magnetization being fixed in a first direction, and a second magnetization pinned region connected to a second boundary of the magnetization reversal region with the direction of magnetization being fixed in a second direction anti-parallel to the first direction. The first and the second magnetization pinning layers fix the magnetization of the first and the second magnetization pinned regions.

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Номер записи: 28
23-08-2012 дата публикации

Method of producing nanopatterned articles, and articles produced thereby

Номер: US20120211871A1
Автор: Soojin Park, Thomas P. Russell, Ting Xu
Принадлежит: Individual

A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media.

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Номер записи: 29
30-08-2012 дата публикации

Magnetic tunnel junction having coherent tunneling structure

Номер: US20120217598A1
Автор: Konstantin Nikolaev, Taras Pokhil, Victor Sapazhnikov, Xilin Peng, Yonghua Chen
Принадлежит: SEAGATE TECHNOLOGY LLC

A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

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Номер записи: 30
13-09-2012 дата публикации

Magnetic memory

Номер: US20120230091A1
Автор: Eiji Kitagawa, Hiroaki Yoda, Hisanori Aikawa, Jyunichi OZEKI, Masahiko Nakayama, Masatoshi Yoshikawa, Minoru Amano, Naoharu Shimomura, Satoshi Yanagi, Shigeki Takahashi
Принадлежит: Individual

According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.

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Номер записи: 31
18-10-2012 дата публикации

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

Номер: US20120261776A1
Автор: Dmytro Apalkov, Kiseok Moon, Steven M. Watts, Vladimir Nikitin, Xueti Tang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

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Номер записи: 32
18-10-2012 дата публикации

Magnetic random access memory (mram) with enhanced magnetic stiffness and method of making same

Номер: US20120264234A1
Автор: Yiming Huai, Yuchen Zhou
Принадлежит: Avalanche Technology Inc

A spin toque transfer magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B). Annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer. Cooling down of the STTMRAM element to a second temperature that is lower than the first temperature is performed and a third free sub-layer is directly deposited on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

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Номер записи: 33
01-11-2012 дата публикации

Magnetic random access memory and method of manufacturing the same

Номер: US20120273844A1
Автор: Masayoshi IWAYAMA, Yoshiaki Asao
Принадлежит: Toshiba Corp

According to one embodiment, a magnetic random access memory includes a first gate electrode and a second gate electrode arranged at a predetermined pitch in a first direction, and extending in a second direction perpendicular to the first direction, a first magnetoresistive element formed above a portion between the first gate electrode and the second gate electrode, an electrode layer formed in a position higher than the first magnetoresistive element, and formed to have a distance which is a half of the pitch from the first magnetoresistive element in the first direction, an interconnection formed in a position higher than the electrode layer, and extending in the first direction, and a first via which connects the first magnetoresistive element and the interconnection, and the electrode layer and the interconnection, by using one conductive layer.

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Номер записи: 34
15-11-2012 дата публикации

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Номер: US20120286382A1
Автор: Guenole Jan, Ru Ying Tong, Witold Kula, Yu Jen Wang
Принадлежит: MagIC Technologies Inc

A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

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Номер записи: 35
15-11-2012 дата публикации

Storage element and storage device

Номер: US20120287696A1
Автор: Hiroyuki Ohmori, Hiroyuki Uchida, Kazuhiro Bessho, Kazutaka Yamane, Masanori Hosomi, Tetsuya Asayama, Yutaka Higo
Принадлежит: Sony Corp

A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information

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Номер записи: 36
15-11-2012 дата публикации

Manufacturing method of magneto-resistive element

Номер: US20120288963A1
Автор: Kazumasa Nishimura
Принадлежит: Canon Anelva Corp

The present invention provides a manufacturing method of a magneto-resistive element capable of obtaining a higher MR ratio, in a method of forming a metal oxide layer (e.g., MgO layer) by oxidation treatment of a metal layer (e.g., Mg layer). An embodiment of the present invention includes the steps of; providing a substrate having a first ferromagnetic layer; fabricating a tunnel barrier layer on the first ferromagnetic layer; and forming a second ferromagnetic layer on the tunnel barrier layer. The step of fabricating the tunnel barrier layer includes; the steps of; depositing a first metal layer on the first ferromagnetic layer; oxidizing the first metal layer; depositing a second metal layer on the oxidized first metal layer; and performing heating treatment on the oxidized first metal layer and the second metal layer at a temperature at which the second metal layer boils.

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Номер записи: 37
22-11-2012 дата публикации

Magnetoresistance sensor with built-in self-test and device configuring ability and method for manufacturing same

Номер: US20120293164A1
Автор: Fu-Tai Liou, Ta-Yung WONG, Tai-Lang TANG, Wei-Tung Peng
Принадлежит: Voltafield Technology Corp

A magnetoresistance sensor includes a multifunctional circuit structure having the functionality of built-in self-testing and/or device configuration. The magnetoresistance sensor further includes a substrate having a first dielectric layer formed thereon and a magnetoresistance structure. The multifunctional circuit structure is disposed on the dielectric layer and includes a winding structure for generating a magnetic field for testing and configuring the magnetoresistance sensor. The magnetoresistance structure is disposed on the multifunctional circuit structure, wherein a topmost layer of the magnetoresistance structure includes a magnetoresistance layer, and the magnetoresistance structure generates electrical resistance variance corresponding to the generated magnetic field for testing and configuring the magnetoresistance sensor. A method for manufacturing the magnetoresistance sensor is also provided.

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Номер записи: 38
22-11-2012 дата публикации

Spin torque transfer memory cell structures and methods

Номер: US20120294077A1
Автор: Gurtej S. Sandhu, Jun Liu
Принадлежит: Micron Technology Inc

Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise an annular STT stack including a nonmagnetic material between a first ferromagnetic material and a second ferromagnetic material and a soft magnetic material surrounding at least a portion of the annular STT stack.

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Номер записи: 39
22-11-2012 дата публикации

Bipolar spin-transfer switching

Номер: US20120294078A1
Автор: Andrew Kent, Daniel Bedau, Huanlong Liu
Принадлежит: New York University NYU

Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to the free layer to achieve large spin-transfer torques and ultra-fast energy efficient switching. OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer, exhibit improved performance over prior art devices. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy less than 450 fJ and may be reliably observed at room temperature with 0.7 V amplitude pulses of 500 ps duration.

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Номер записи: 40
22-11-2012 дата публикации

Magnetic random access memory (mram) with enhanced magnetic stiffness and method of making same

Номер: US20120295370A1
Автор: Yiming Huai, Yuchen Zhou
Принадлежит: Avalanche Technology Inc

A STTMRAM element has a free sub-layer with enhanced internal stiffness. A first free sub-layer is made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, with an amount greater than the amount of B in the first free sub-layer. The STTMRAM element is cooled to a second temperature that is lower than the first temperature and a third free sub-layer is deposited directly on top of the second free layer, with the third free sub-layer being made partially of boron B. The amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

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Номер записи: 41
29-11-2012 дата публикации

Method and system for fabricating a narrow line structure in a magnetic recording head

Номер: US20120298621A1
Автор: Wei Gao
Принадлежит: Western Digital Fremont LLC

A method for fabricating a structure in magnetic recording head is described. First and second hard mask layers are provided on the layer(s) for the structure. A BARC layer and photoresist mask having a pattern are provided on the second hard mask layer. The pattern includes a line corresponding to the structure. The pattern is transferred to the BARC layer and the second hard mask layer in a single etch using an etch chemistry. At least the second hard mask layer is trimmed using substantially the same first etch chemistry. A mask including a hard mask line corresponding to the line and less than thirty nanometers wide is thus formed. The pattern of the second hard mask is transferred to the first hard mask layer. The pattern of the first hard mask layer is transferred to the layer(s) such that the structure has substantially the width.

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Номер записи: 42
29-11-2012 дата публикации

Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory

Номер: US20120299137A1
Автор: Daniel C. Worledge
Принадлежит: International Business Machines Corp

A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel junction (MTJ) stack.

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Номер записи: 43
06-12-2012 дата публикации

Vialess memory structure and method of manufacturing same

Номер: US20120306033A1
Автор: Jing Zhang, Kimihiro Satoh, Yiming Huai
Принадлежит: Avalanche Technology Inc

A method of manufacturing a magnetic memory cell, including a magnetic tunnel junction (MTJ), includes using silicon nitride layer and silicon oxide layer to form a trench for depositing copper to be employed for connecting the MTJ to other circuitry without the use of a via.

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Номер записи: 44
20-12-2012 дата публикации

Magnetoresistive Element and Magnetic Memory

Номер: US20120320666A1
Автор: Fumihiro Matsukura, Hideo Ohno, Hiroyuki Yamamoto, Katsuya Miura, Masaki Endoh, Shoji Ikeda, Shun Kanai
Принадлежит: HITACHI LTD, Tohoku University NUC

There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3 d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.

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Номер записи: 45
27-12-2012 дата публикации

Semiconductor memory device

Номер: US20120326251A1
Автор: Daisuke Ikeno, Koji Yamakawa, Yasuyuki Sonoda
Принадлежит: Toshiba Corp

According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the non-magnetic layer, and an insulating film buried between the magneto-resistance elements adjacent to each other, a powder made of a metallic material or a magnetic material being dispersed in the insulating film.

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Номер записи: 46
03-01-2013 дата публикации

Magnetoresistive element and method of manufacturing the same

Номер: US20130001652A1
Автор: Hideaki Harakawa, Jyunichi OZEKI, Keiji Hosotani, Masatoshi Yoshikawa, Satoshi Seto, Tatsuya Kishi
Принадлежит: Individual

According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B 4 C, Al 2 O 3 and AlN.

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Номер записи: 47
03-01-2013 дата публикации

Magnetoresistive element and manufacturing method of the same

Номер: US20130001716A1
Автор: Daisuke Ikeno, Katsuaki Natori, Koji Yamakawa, Tadashi Kai
Принадлежит: Toshiba Corp

In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second diffusion prevention layer on the second interfacial magnetic layer, a second magnetic layer on the second diffusion prevention layer, and an upper electrode layer on the second magnetic layer. The ratio of a crystal-oriented part to the other part in the second interfacial magnetic layer is higher than the ratio of a crystal-oriented part to the other part in the first interfacial magnetic layer.

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Номер записи: 48
10-01-2013 дата публикации

Method And System For Providing A Magnetic Junction Using Half Metallic Ferromagnets

Номер: US20130009260A1
Автор: Alexey Vasilyevitch Khvalkovskiy, Dmytro Apalkov, Mohamad Towfik Krounbi, Vladimir Nikitin, Xueti Tang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.

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Номер записи: 49
17-01-2013 дата публикации

Die-Sized Atomic Magnetometer and Method of Forming the Magnetometer

Номер: US20130015850A1
Автор: Paul Mawson, Peter J. Hopper, Philipp Lindorfer, Roozbeh Parsa, Steven Hunt, William French
Принадлежит: National Semiconductor Corp

The cost and size of an atomic magnetometer are reduced by attaching together a first die which integrates together a vapor cell, top and side photo detectors, and processing electronics, a second die which integrates together an optics package and a heater for the vapor cell, and a third die which integrates together a VCSEL, a heater for the VCSEL, and control electronics.

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Номер записи: 50
07-02-2013 дата публикации

Hybrid Film for Protecting MTJ Stacks of MRAM

Номер: US20130032908A1
Автор: Bang-Tai Tang, Cheng-Yuan Tsai
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form a MTJ stack, and forming a first dielectric cap layer over a top surface and on a sidewall of the MTJ stack. The step of patterning and the step of forming the first dielectric cap layer are in-situ formed in a same vacuum environment. A second dielectric cap layer is formed over and contacting the first dielectric cap layer.

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Номер записи: 51
07-02-2013 дата публикации

Magnetic memory device and method of manufacturing the same

Номер: US20130032910A1
Автор: Dong Ha JUNG, Guk Cheon Kim, Ki Seon Park
Принадлежит: Hynix Semiconductor Inc

A magnetic memory device includes a first fixing layer, a first tunnel barrier coupled to the first fixing layer, a free layer coupled to the first tunnel barrier and having a stacked structure including a first ferromagnetic layer, an oxide tunnel spacer, and a second ferromagnetic layer, a second tunnel barrier coupled to the free layer, and a second fixing layer coupled to the second tunnel barrier.

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Номер записи: 52
14-02-2013 дата публикации

Magnetic random access memory

Номер: US20130037862A1
Автор: Eiji Kitagawa, Naoharu Shimomura, Tsuneo Inaba
Принадлежит: Toshiba Corp

According to one embodiment, a magnetic random access memory includes a plurality of magnetoresistance elements. The plurality of magnetoresistance elements each include a recording layer having magnetic anisotropy perpendicular to a film surface, and a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization direction, and a first nonmagnetic layer formed between the recording layer and the reference layer. The recording layer is physically separated for each of the plurality of magnetoresistance elements. The reference layer and the first nonmagnetic layer continuously extend over the plurality of magnetoresistance elements.

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Номер записи: 53
21-02-2013 дата публикации

Magnetic tunnel junction for MRAM applications

Номер: US20130043471A1
Автор: Chyu-Jiuh Torng, Wei Cao, Witold Kula
Принадлежит: MagIC Technologies Inc

Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

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Номер записи: 54
28-02-2013 дата публикации

Magnetoresistive random access memory (mram) device and fabrication methods thereof

Номер: US20130049144A1
Автор: Bang-Tai Tang, Cheng-Yuan Tsai
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form an MTJ cell, and forming a dielectric cap layer over a top surface and on a sidewall of the MTJ cell. The step of patterning and the step of forming the dielectric cap layer are in-situ formed in a same vacuum environment. A plasma treatment is performed on the dielectric cap layer to transform the dielectric cap layer into a treated dielectric cap layer, whereby the treated dielectric cap layer improves protection from H 2 O or O 2 , and thus degradation.

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Номер записи: 55
07-03-2013 дата публикации

Memory device and method for manufacturing the same

Номер: US20130058162A1
Автор: Susumu Shuto, Takaya Yamanaka
Принадлежит: Toshiba Corp

According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a memory region; and a conductive region. The transistor controls a conduction of each of a current in a first direction flowing between the first line and the second line and a current in a second direction opposite to the first direction. The memory region has a first magnetic tunnel junction element which is connected between the first line and one end of the transistor, a magnetization direction of which becomes parallel when a current not less than a first parallel threshold value flows in the first direction, and the magnetization direction of which becomes antiparallel when a current not less than a first antiparallel threshold value flows in the second direction. The conductive region is connected between the second line and the other end of the transistor.

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Номер записи: 56
14-03-2013 дата публикации

Spin transfer torque random access memory

Номер: US20130062674A1
Автор: Chung-Lin Huang, Ron Fu Chu, Tzung Han Lee
Принадлежит: Inotera Memories Inc

A spin transfer torque random access memory includes a substance unit, a source line unit, an insulation unit, a transistor unit, a MTJ unit, and a bit line unit. The substance unit includes a substance layer. The source line unit includes a plurality of source lines formed inside the substance layer. The transistor unit includes a plurality of transistors respectively disposed on the source lines. Each transistor includes a source region formed on each corresponding source line, a drain region formed above the source region, a channel region formed between the source region and the drain region, and a surrounding gate region surrounding the source region, the drain region, and the channel region. The MTJ unit includes a plurality of MTJ structures respectively disposed on the transistors. The bit line unit includes at least one bit line disposed on the MTJ unit.

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Номер записи: 57
21-03-2013 дата публикации

Nonvolatile memory device

Номер: US20130070522A1
Автор: Daisuke Saida, Junichi Ito, Minoru Amano, Tazumi Nagasawa, Yuichi Ohsawa
Принадлежит: Toshiba Corp

According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.

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Номер записи: 58
21-03-2013 дата публикации

Magnetic random access memory (mram) with enhanced magnetic stiffness and method of making same

Номер: US20130071954A1
Автор: Yiming Huai, Yuchen Zhou
Принадлежит: Avalanche Technology Inc

A spin toque transfer magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B). Annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer. Cooling down of the STTMRAM element to a second temperature that is lower than the first temperature is performed and a third free sub-layer is directly deposited on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

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Номер записи: 59
28-03-2013 дата публикации

Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

Номер: US20130075845A1
Автор: Kangho Lee, Seung H. Kang, Wei-Chuan Chen, Xiaochun Zhu
Принадлежит: Qualcomm Inc

Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier, A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

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Номер записи: 60
28-03-2013 дата публикации

Magnetic memory

Номер: US20130075846A1
Автор: Eiji Kariyada, Katsumi Suemitsu
Принадлежит: Renesas Electronics Corp

A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.

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Номер записи: 61
28-03-2013 дата публикации

Magnetic memory

Номер: US20130075847A1
Автор: Hiroaki Honjou
Принадлежит: NEC Corp

A magnetic memory has: a pinning layer being a perpendicular magnetic film whose magnetization direction is fixed; an underlayer formed on the pinning layer; and a data storage layer being a perpendicular magnetic film formed on the underlayer. The data storage layer has: a magnetization free region whose magnetization direction is reversible; and a magnetization fixed region magnetically coupled with the pinning layer through the underlayer. A magnetization direction of the magnetization fixed region is fixed by the magnetic coupling. The underlayer has a magnetic underlayer made of a magnetic material.

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Номер записи: 62
28-03-2013 дата публикации

Spin torque transfer memory cell structures and methods

Номер: US20130077378A1
Автор: Gurtej S. Sandhu, Stephen J. Kramer
Принадлежит: Micron Technology Inc

Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.

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Номер записи: 63
04-04-2013 дата публикации

Magnetization switching through magnonic spin transfer torque

Номер: US20130082798A1
Автор: Peng Yan, Xiangrong Wang, Xiansi Wang
Принадлежит: Hong Kong University of Science and Technology HKUST

The subject application describes systems and methods that drive magnetization switching through magnonic spin transfer torque. A spin current is provided to a first magnetic layer with a first magnetic state. The spin current facilitates magnetization switching via a magnonic spin transfer torque in a second magnetic layer with a second magnetic state that is separated from the first magnetic layer by an interface. Alternatively, a spin current is provided to a first magnetic domain with a first magnetic state. The spin current facilitates domain wall propagation via a magnonic spin transfer torque. The domain wall is between the first magnetic domain and a second magnetic domain in a second magnetic state.

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Номер записи: 64
04-04-2013 дата публикации

Self-reference magnetic random access memory (mram) cell comprising ferrimagnetic layers

Номер: US20130083593A1
Автор: Ioan Lucian Prejbeanu, Lucien Lombard
Принадлежит: CROCUS TECHNOLOGY SA

MRAM cell comprising a magnetic tunnel junction comprising a storage layer having a net storage magnetization being adjustable when the magnetic tunnel junction is at a high temperature threshold and being pinned at a low temperature threshold; a sense layer having a reversible sense magnetization; and a tunnel barrier layer between the sense and storage layers; at least one of the storage and sense layer comprising a ferrimagnetic 3d-4f amorphous alloy material comprising a sub-lattice of 3d transition metals atoms providing a first magnetization and a sub-lattice of 4f rare-earth atoms providing a second magnetization, such that at a compensation temperature of said at least one of the storage layer and the sense layer, the first magnetization and the second magnetization are substantially equal. The disclosed MRAM cell can be written and read using a small writing and reading field, respectively.

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Номер записи: 65
11-04-2013 дата публикации

Non-volatile magnetic memory element with graded layer

Номер: US20130087869A1
Автор: Parviz Keshtbod, Rajiv Yadav Ranjan, Roger Klas Malmhall
Принадлежит: Avalanche Technology Inc

A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

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Номер записи: 66
18-04-2013 дата публикации

Oscillator element and method for producing the oscillator element

Номер: US20130093529A1
Автор: Hiroki Maehara
Принадлежит: Canon Anelva Corp

An oscillator element according to one embodiment of the present invention includes a magnetoresistive element having a magnetization free layer, magnetization fixed layer, and a tunnel barrier layer. Provided on the magnetization free layer are a protection layer and an electrode having a point contact section where the electrode is partially in electrical contact with the protection layers. An interlayer insulating film is provided between the electrode and the protection layer. The area of the interface between the magnetization free layer and the tunnel barrier layer is larger than the surface area of the point contact section. Moreover, a portion of the protection layer in contact with the interlayer insulating film has a smaller thickness in a surface normal direction than the portion of the protection layer in contact with the electrode.

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Номер записи: 67
25-04-2013 дата публикации

Novel Magnetic Tunnel Junction Device And Its Fabricating Method

Номер: US20130099335A1
Автор: Guoqiang Yu, Min-Hwa Chi, Xiufeng Han
Принадлежит: Semiconductor Manufacturing International Beijing Corp

Using a damascene process, a cup-shaped MTJ device is formed in an opening within a dielectric layer. A passivation layer is formed on the top surfaces of the sidewalls of the cup-shaped MTJ device to enclose the top of the sidewalls, thereby reducing magnetic flux leakage. Accordingly, the MTJ device may be fabricated using the same equipment that are compatible with and commonly used in CMOS technologies/processes.

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Номер записи: 68
25-04-2013 дата публикации

Magnetic tunnel junction device and its fabricating method

Номер: US20130099336A1
Автор: Chi Min-Hwa, MIENO FUMITAKE
Принадлежит: Semiconductor Manufacturing International Beijing Corp

The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and may be avoided. In some embodiments, a spacer is formed between a first portion and a second portion of the MTJ to prevent the tunnel insulating layer of the MTJ from being damaged in subsequent processes, greatly increasing product yield thereby. In other embodiments, signal quality may be improved and magnetic flux leakage may be reduced through the improved cup-shaped MTJ structure of this invention.

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Номер записи: 69
25-04-2013 дата публикации

Magnetic nano-multilayers for magnetic sensors and manufacturing method thereof

Номер: US20130099780A1
Автор: Houfang Liu, Qinli Ma, Xiufeng Han
Принадлежит: Institute of Physics of CAS

The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes—sequentially from one end to the other end—a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily.

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Номер записи: 70
23-05-2013 дата публикации

Semiconductor device and method for manufacturing the same

Номер: US20130130407A1
Автор: Wensheng Wang
Принадлежит: FUJITSU SEMICONDUCTOR LIMITED

A semiconductor device includes a capacitor, the capacitor includes a lower electrode, which includes platinum, provided above a semiconductor substrate; a first ferroelectric film, which includes lead zirconate titanate added with La, provided on the lower electrode; a second ferroelectric film, which includes lead zirconate titanate added with La, Ca, and Sr, provided directly on the first ferroelectric film, the second ferroelectric film having a thickness smaller than that of the first ferroelectric film and includes amounts of Ca and Sr greater than amounts of Ca and Sr that may be present in the first ferroelectric film; and an upper electrode, which includes a conductive oxide, provided on the second ferroelectric film.

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Номер записи: 71
06-06-2013 дата публикации

Magnetic memory device and magnetic memory

Номер: US20130140660A1
Автор: Kiyokazu Nagahara, Nobuyuki Ishiwata, Norikazu Ohshima, Shunsuke Fukami, Tetsuhiro Suzuki
Принадлежит: NEC Corp

In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.

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Номер записи: 72
13-06-2013 дата публикации

Perovskite manganese oxide thin film

Номер: US20130149556A1
Автор: Yasushi Ogimoto
Принадлежит: Fuji Electric Co Ltd

An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an (m 10 ) orientation where 19≧m≧2. When m is 2 the perovskite manganese oxide thin film has a ( 210 ) orientation. The invention provides a perovskite manganese oxide thin film having a transition temperature at room temperature or above, which is higher than that of the bulk oxide, by exploiting the substrate strain and the symmetry of the crystal lattice.

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Номер записи: 73
20-06-2013 дата публикации

Method of making device

Номер: US20130154037A1
Автор: Joydeep Guha
Принадлежит: Lam Research Corp

A method for forming MRAM (magnetoresistive random access memory) devices is provided. A bottom electrode assembly is formed. A magnetic junction assembly is formed, comprising, depositing a magnetic junction assembly layer over the bottom electrode assembly, forming a patterned mask over the magnetic junction assembly layer, etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps, gap filling the magnetic junction assembly, and planarizing the magnetic junction assembly. A top electrode assembly is formed.

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Номер записи: 74
20-06-2013 дата публикации

Magnetic memory device and reading method of magnetic memory device

Номер: US20130155761A1
Автор: Masaki Aoki
Принадлежит: Fujitsu Ltd

A magnetic memory device including a multivalued magnetic memory cell whose electric resistances become first to fourth resistance value when first to fourth information are respectively stored, a first reference cell larger than the first resistance value and smaller than the second resistance value, a second reference cell larger than the second resistance value and smaller than the third resistance value, a third reference cell larger than the third resistance value and smaller than the fourth resistance value, and a read circuit including first to third comparators comparing a signal corresponding to the resistance of the magnetic memory cell and respective signals corresponding to the resistances of the first to third reference cells.

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Номер записи: 75
11-07-2013 дата публикации

Magnetic structures, methods of forming the same and memory devices including a magnetic structure

Номер: US20130175646A1
Автор: Kwang-Seok Kim, Sung-Chul Lee
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.

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Номер записи: 76
25-07-2013 дата публикации

Magnetic device, and method for reading from and writing to said device

Номер: US20130188421A1
Автор: Bernard Dieny
Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

A magnetic device includes a reference layer, the magnetization direction of which is fixed, and a storage layer, the magnetization direction of which is variable. In a write mode, the magnetization direction of the storage layer is changed so as to store a “1” or a “0” in the storage layer. In a reading mode, the resistance of the magnetic device is measured so as to know what is stored in the storage layer. The magnetic device also includes a control layer, the magnetization direction of which is variable. The magnetization direction of the control layer is controlled so as to increase the effectiveness of the spin-transfer torque in the event writing to the storage layer is desired, and to decrease the effectiveness of the spin-transfer torque in the event reading the information contained in the storage layer, without modifying the information, is desired.

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Номер записи: 77
01-08-2013 дата публикации

High current capable access device for three-dimensional solid-state memory

Номер: US20130194855A1
Автор: Luiz M. Franca-Neto
Принадлежит: Individual

The present invention generally relates to three-dimensional arrangement of memory cells and methods of addressing those cells. The memory cells can be arranged in a 3D orientation such that macro cells that are in the middle of the 3D arrangement can be addressed without the need for overhead wiring or by utilizing a minimal amount of overhead wiring. An individual macro cell within a memory cell can be addressed by applying three separate currents to the macro cell. A first current is applied to the memory cell directly. A second current is applied to the source electrode of the MESFET, and a third current is applied to the gate electrode of the MESFET to permit the current to travel through the channel of the MESFET to the drain electrode which is coupled to the memory element.

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Номер записи: 78
29-08-2013 дата публикации

Magentic memory with a domain wall

Номер: US20130223141A1
Автор: Parviz Keshtbod, Rajiv Yadav Ranjan, Roger Klaus Malmhall
Принадлежит: Avalanche Technology Inc

A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.

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Номер записи: 79
12-09-2013 дата публикации

Magnetic device

Номер: US20130234267A1
Автор: Hyung-joon Kwon, Ki-Joon Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A magnetic body structure including: a magnetic layer pattern; and a conductive pattern including a metallic glass alloy and covering at least a portion of the magnetic body structure.

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Номер записи: 80
12-09-2013 дата публикации

Magnetic memory cell and method of manufacturing the same

Номер: US20130234268A1
Автор: Eiji Kariyada, Katsumi Suemitsu
Принадлежит: Renesas Electronics Corp

The present invention suppresses short circuits of a magnetic memory cell and a deterioration of the characteristics of a magnetic layer. A magnetic memory cell includes: a data storage layer; a tunnel barrier layer formed on the data storage layer; a reference layer formed on the tunnel barrier layer so as to cover a part of the tunnel barrier layer; and a metallic oxide layer formed on the tunnel barrier layer without covering the reference layer. The metallic oxide layer contains an oxide of a material of a contact part of the reference layer with the tunnel barrier layer.

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Номер записи: 81
03-10-2013 дата публикации

Semiconductor memory devices

Номер: US20130256778A1
Автор: Jae-Hwang Sim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor memory device includes a substrate including a cell region and a peripheral region, word lines on the substrate of the cell region, each of the word lines including a charge storing part and a control gate electrode sequentially stacked, and a peripheral gate pattern on the substrate of the peripheral region. Each of the control gate electrode and the peripheral gate pattern includes a high-carbon semiconductor pattern and a low-carbon semiconductor pattern, the low-carbon semiconductor pattern being on the high-carbon semiconductor pattern.

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Номер записи: 82
03-10-2013 дата публикации

High capaciy low cost multi-state magnetic memory

Номер: US20130258763A1
Автор: Parviz Keshtbod, Rajiv Yadav Ranjan, Roger Klas Malmhall
Принадлежит: Avalanche Technology Inc

One embodiment of the present invention includes a multi-state current-switching magnetic memory element includes a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.

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Номер записи: 83
24-10-2013 дата публикации

Manufacturing apparatus

Номер: US20130277207A1
Автор: Koji Tsunekawa
Принадлежит: Canon Anelva Corp

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

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Номер записи: 84
24-10-2013 дата публикации

Thin-film Magnetoresistance Sensing Element, Combination Thereof, and Electronic Device Coupled to the Combination

Номер: US20130277781A1
Автор: James Geza Deak, Songsheng Xue
Принадлежит: James Geza Deak, Songsheng Xue

A thin film magnetoresistive sensor for detecting a magnetic field components perpendicular and parallel to the plane of the sensor substrate is disclosed. The sensing element comprises a free layer ( 30 ), a reference layer ( 10; 11 ), and a spacer layer ( 20; 21 ) between the free layer and the reference layer. The easy-axis magnetization, which is inherent to the material of the free layer ( 30 ), is arranged to be perpendicular to the plane of the sensor substrate. The magnetization direction of the reference layer ( 10; 11 ) is confined to a direction parallel to the substrate plane. The reference layer consists of a ferromagnetic layer exchange coupled to an antiferromagnetic layer, or consists of a ferromagnetic layer having a higher coercive force than that of the free layer. The spacer layer ( 20; 21 ) is composed of an insulating material or a conductive material. The magnetoresistive sensor further includes an array of aforementioned sensing elements coupled to an electronic device in order to provide three-axis sensing.

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Номер записи: 85
24-10-2013 дата публикации

Arrangements For An Integrated Sensor

Номер: US20130277782A1
Автор: Michael C. Doogue, Vijay Mangtani, William P. Taylor
Принадлежит: Allegro Microsystems LLC

An integrated circuit can have a first substrate supporting a magnetic field sensing element and a second substrate supporting another magnetic field sensing element. The first and second substrates can be arranged in a variety of configurations. Another integrated circuit can have a first magnetic field sensing element and second different magnetic field sensing element disposed on surfaces thereof.

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Номер записи: 86
24-10-2013 дата публикации

Hierarchical memory magnetoresistive random-access memory (mram) architecture

Номер: US20130279244A1
Автор: Seung H. Kang, Xiaochun Zhu
Принадлежит: Qualcomm Inc

A hierarchical memory magnetoresistive random-access memory architecture is disclosed. In a particular embodiment, an apparatus includes a first magnetoresistive random-access memory (MRAM) device corresponding to a first level in a hierarchical memory system. The apparatus includes a second MRAM device corresponding to a second level in the hierarchical memory system. The first MRAM device has a first access latency and includes a first magnetic tunnel junction (MTJ) device having a first physical configuration. The second MRAM device has a second access latency and includes a second WI device having a second physical configuration. The first access latency is less than the second access latency.

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Номер записи: 87
31-10-2013 дата публикации

Magnetic memory and method of fabrication

Номер: US20130285177A1
Автор: Alexander C. Kontos, John J. Hautala, Simon Ruffell, Steven Sherman
Принадлежит: Varian Semiconductor Equipment Associates Inc

In one embodiment a magnetic memory includes a memory device base and a plurality of memory cells disposed on the memory cell base, where each memory cell includes a layer stack comprising a plurality of magnetic and electrically conductive layers arranged in a stack of layers common to each other memory cell. The magnetic memory further includes an implanted matrix disposed between the memory cells and surrounding each memory cell, where the implanted matrix includes component material of the layer stack of each memory cell inter mixed with implanted species, where the implanted matrix comprises a non-conducting material and a non-magnetic material, wherein each memory cell is electrically and magnetically isolated from each other memory cell.

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Номер записи: 88
31-10-2013 дата публикации

Embedded Magnetic Random Access Memory (MRAM)

Номер: US20130288396A1
Автор: Ebrahim Abedifard, Parviz Keshtbod
Принадлежит: Avalanche Technology Inc

A magnetic random access memory (MRAM) cell includes an embedded MRAM and an access transistor. The embedded MRAM is formed on a number of metal-interposed-in-interlayer dielectric (ILD) layers, which each include metal dispersed there through and are formed on top of the access transistor. A magneto tunnel junction (MTJ) is formed on top of a metal formed in the ILD layers that is in close proximity to a bit line. An MTJ mask is used to pattern the MTJ and is etched to expose the MTJ. Ultimately, metal is formed on top of the bit line and extended to contact the MTJ.

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Номер записи: 89
19-12-2013 дата публикации

Single-Package Bridge-Type Magnetic-Field Angle Sensor

Номер: US20130334634A1
Автор: Insik Jin, James Geza Deak, Songsheng Xue, Weifeng Shen, Xiaofeng Lei, Xiaojun Zhang
Принадлежит: Insik Jin, James Geza Deak, Songsheng Xue, Weifeng Shen, Xiaofeng Lei, Xiaojun Zhang

A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.

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Номер записи: 90
26-12-2013 дата публикации

Devices including tantalum alloy layers

Номер: US20130341743A1
Автор: Eric Walter Singleton, Jae-Young Yi, Liwen Tan
Принадлежит: SEAGATE TECHNOLOGY LLC

A device that includes a sensor stack, the sensor stack including a reference layer, a free layer and a barrier layer positioned between the reference layer and the free layer; a seed layer; and a cap layer, wherein the sensor stack is positioned between the seed layer and the cap layer, and wherein at least one of the seed layer or the cap layer includes TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof.

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Номер записи: 91
26-12-2013 дата публикации

Magnetic Field Measurement Apparatus

Номер: US20130341745A1
Автор: Ryuzo KAWABATA, Seiichi Suzuki, Taro Osabe
Принадлежит: HITACHI LTD

A light pumping magnetic measurement apparatus configured to suppress an influence on a magnetic field from a heater and facilitate reduction in size and integration of a gas cell when heating the gas cell in order to improve a sensitivity of detection of the magnetic field is provided. This measurement apparatus includes a first glass substrate, a substrate 102 having a thermal conductivity higher than glass, and a second glass substrate laminated in this order. At least one portion of a through hole formed on the substrate 102 having a thermal conductivity higher than the glass and penetrating therethrough when viewed in cross section constitutes a void 111 hermetically sealed by the first glass substrate and the second glass substrate, the void is filled with alkali metal gas generated by an alkali metal solid substance or liquid 112 , and a flow channel (through hole) 113 connected to inlet-outlet ports 114 provided on the laminated substrate is formed in the vicinity of the void 111 of a substrate 103 , so that the temperature of the alkali metal gas may be adjusted by causing the fluid to flow to the flow channel (through hole).

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Номер записи: 92
26-12-2013 дата публикации

Redeposition Control in MRAM Fabrication Process

Номер: US20130341801A1
Автор: Dong Ha JUNG, Ebrahim Abedifard, Jing Zhang, Kimihiro Satoh, Parviz Keshtbod, Yiming Huai
Принадлежит: Individual

Methods and structures are described to reduce metallic redeposition material in the memory cells, such as MTJ cells, during pillar etching. One embodiment forms metal studs on top of the landing pads in a dielectric layer that otherwise covers the exposed metal surfaces on the wafer. Another embodiment patterns the MTJ and bottom electrode separately. The bottom electrode mask then covers metal under the bottom electrode. Another embodiment divides the pillar etching process into two phases. The first phase etches down to the lower magnetic layer, then the sidewalls of the barrier layer are covered with a dielectric material which is then vertically etched. The second phase of the etching then patterns the remaining layers. Another embodiment uses a hard mask above the top electrode to etch the MTJ pillar until near the end point of the bottom electrode, deposits a dielectric, then vertically etches the remaining bottom electrode.

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Номер записи: 93
02-01-2014 дата публикации

Applications for nanopillar structures

Номер: US20140001432A1
Автор: Mark D. Hall, Mehul D. Shroff
Принадлежит: FREESCALE SEMICONDUCTOR INC

A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask. A second nanocluster layer is formed on the substrate. A second region of the hard mask overlying a second region of the substrate is etched to create a second pattern in the hard mask. The substrate is then etched through the hard mask to form a first set of nanopillars in the first region of the substrate and a second set of nanopillars in the second region of the substrate. By varying the nanocluster deposition steps between the first and second layers of nanoclusters, the first and second sets of nanopillars will exhibit different characteristics.

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Номер записи: 94
09-01-2014 дата публикации

Magnetic memory

Номер: US20140010004A1
Автор: Tetsuhiro Suzuki
Принадлежит: Renesas Electronics Corp

A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.

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Номер записи: 95
16-01-2014 дата публикации

Stt mram magnetic tunnel junction architecture and integration

Номер: US20140015080A1
Автор: Kangho Lee, Seung H. Kang, Shiqun Gu, Xia Li, Xiaochun Zhu
Принадлежит: Qualcomm Inc

A magnetic tunnel junction (MTJ) device for a magnetic random access memory (MRAM) includes a first conductive interconnect communicating with at least one control device and a first electrode coupling to the first conductive interconnect through a via opening formed in a dielectric passivation barrier using a first mask. The device has an MTJ stack for storing data, coupled to the first electrode. A portion of the MTJ stack has lateral dimensions based upon a second mask. The portion defined by the second mask is over the contact via. A second electrode is coupled to the MTJ stack and also has a lateral dimension defined by the second mask. The first electrode and a portion of the MTJ stack are defined by a third mask. A second conductive interconnect is coupled to the second electrode and at least one other control device.

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Номер записи: 96
23-01-2014 дата публикации

Magnentic resistance memory apparatus having multi levels and method of driving the same

Номер: US20140021567A1
Автор: Won Joon Choi
Принадлежит: SK hynix Inc

A magnetic resistance memory apparatus capable of implementing various levels and a method of driving the same are provided. The magnetic resistance memory apparatus includes a first magnetic device that includes a fixed layer having a fixed magnetization direction, a tunnel layer disposed on the fixed layer, and a first free layer disposed on the tunnel layer having a variable magnetization direction, and a second magnetic device disposed on the first magnetic device including a plurality of free layers insulated with a spacer layer interposed.

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Номер записи: 97
23-01-2014 дата публикации

Magnentic resistance memory apparatus having multi levels and method of driving the same

Номер: US20140022838A1
Автор: Won Joon Choi
Принадлежит: SK hynix Inc

A magnetic resistance memory apparatus capable of implementing various levels and a method of driving the same are provided. The magnetic resistance memory apparatus includes a first magnetic device that includes a fixed layer having a fixed magnetization direction, a tunnel layer disposed on the fixed layer, and a first free layer disposed on the tunnel layer having a variable magnetization direction, and a second magnetic device disposed on the first magnetic device including a plurality of free layers insulated with a spacer layer interposed.

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Номер записи: 98
23-01-2014 дата публикации

Magnetoresistance effect device and method of production of the same

Номер: US20140024140A1
Автор: David D. DJAYAPRAWIRA, Hiroki Maehara, Koji Tsunekawa, Motonobu Nagai, Naoki Watanabe, Shinji Yamagata, Shinji Yuasa
Принадлежит: Canon Anelva Corp, National Institute of Advanced Industrial Science and Technology AIST

A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

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Номер записи: 99
30-01-2014 дата публикации

Access transistor with a buried gate

Номер: US20140027830A1
Автор: Ebrahim Abedifard, Kimihiro Satoh
Принадлежит: Avalanche Technology Inc

A magnetic memory cell is formed including a magneto tunnel junction (MTJ) and an access transistor, which is used to access the MTJ in operation. The access transistor, which is formed on a silicon substrate, includes a gate, drain and source with the gate position substantially perpendicular to the plane of the silicon substrate thereby burying the gate and allowing more surface area on the silicon substrate for formation of additional memory cells.

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Номер записи: 100