Crucible for silicon suitable for producing semiconductors

A crucible for producing a silicon suitable for producing a semiconductor includes a plurality of components and at least one unclosed joint gap.

Support Ring For Supporting A Semiconductor Wafer Composed Of Monocrystalline Silicon During A Thermal Treatment, Method For The Thermal Treatment of Such A Semiconductor Wafer, and Thermally Treated Semiconductor Wafer Composed of Monocrystalline Silicon

A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

Vitreous silica crucible

The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm −1 and 606 cm −1 , respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.

Vitreous silica crucible

The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible and the generation of cracks. According to the present invention, a vitreous silica crucible is provided for pulling a silicon single crystal having a wall, the wall including a non-doped inner surface layer made of natural vitreous silica or synthetic vitreous silica, a mineralizing element-maldistributed vitreous silica layer containing dispersed island regions each containing a mineralizing element, and wherein the vitreous silica of the island regions and the vitreous silica of a surrounding region of the island regions is a combination of mineralizing element-doped natural vitreous silica and non-doped synthetic vitreous silica, or a combination of mineralizing element-doped synthetic vitreous silica and non-doped natural vitreous silica, and the inner surface layer is made of vitreous silica of a different kind from that of the island region.

Composite crucible, method of manufacturing the same, and method of manufacturing silicon crystal

The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, and can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the same. The composite crucible 10 is characterized in the use of mullite (3Al 2 O 3 .2SiO 2 ) as the basic material of the crucible. The composite crucible 10 has the crucible body 11 made of mullite material whose main component is alumina and silica, and a transparent vitreous silica layer 12 formed on the inner surface of the crucible body 11 . The thickness of the transparent vitreous silica layer 12 is smaller than that of the crucible body 11 . The crucible body 11 can be formed by the slip casting method, and the transparent vitreous silica layer 12 can be formed by the thermal spraying method.

Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same

The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11 a provided on the crucible upper portion, and a second opaque vitreous silica portion 11 b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11 b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11 a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11 a is wider than that of the second opaque vitreous silica portion 11 b, and the material silica powder for the first opaque vitreous silica portion 11 a includes more fine powder than that for the second opaque vitreous silica portion 11 b.

Enclosure for controlling the environment of optical crystals

An enclosure that maintains the environment of one or more optical crystals and allows efficient frequency conversion for light at wavelengths at or below 400 nm with minimal stress being placed on the crystals in the presence of varying temperatures. Efficient conversion may include multiple crystals of the same or different materials. Multiple frequency conversion steps may also be employed within a single enclosure. Materials that have been processed specifically to provide increased lifetimes, stability, and damage thresholds over designs previously available are employed. The enclosure allows pre-exposure processing of the crystal(s) such as baking at high temperatures and allowing real time measurement of crystal properties.

Method and device for producing silicon blocks

A method for producing silicon blocks comprises providing a crucible for receiving a silicon melt, with a base and a plurality of side walls connected to the base, attaching nuclei at least on an inner side of the base of the crucible, the nuclei having a melt temperature, which is greater than the melt temperature of silicon, filling the crucible with the silicon melt, solidifying the silicon melt beginning on the nuclei and removing the solidified silicon from the crucible.

Halogen assisted physical vapor transport method for silicon carbide growth

A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.

Template for three-dimensional thin-film solar cell manufacturing and methods of use

A template 100 for three-dimensional thin-film solar cell substrate formation for use in three-dimensional thin-film solar cells. The template 100 comprises a substrate which comprises a plurality of posts 102 and a plurality of trenches 104 between said plurality of posts 102 . The template 100 forms an environment for three-dimensional thin-film solar cell substrate formation.

Production method, production vessel and member for nitride crystal

To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.

Apparatus and method for extracting a silicon ingot

Provided are an apparatus and method of extracting a silicon ingot. The apparatus for extracting a silicon ingot includes a chamber in which a silicon source material introduced into a cold crucible is melted, a primary extraction apparatus vertically movably installed in the chamber and configured to solidify the molten silicon to extract the silicon ingot, a movable apparatus configured to horizontally move the primary extraction apparatus, and a secondary extraction apparatus vertically movably installed under the chamber and configured to extract the silicon ingot in a state in which the primary extraction apparatus is moved to one side. Therefore, as the height of the extraction apparatus is reduced, manufacturing cost of equipment can be reduced and installation space of the extraction apparatus can also be reduced.

Vitreous silica crucible and method of manufacturing the same

Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion.

Crucibles made with the cold form process

A crucible for growing crystals, the crucible being formed from Molybdenum and Rhenium. A crucible for growing crystals, the crucible being formed from a metal selected from Group V of the Periodic Table of the Elements. A crucible for growing crystals, the crucible comprising a body and a layer formed on at least a portion of the body, the layer being formed out of Molybdenum.

Templated growth of porous or non-porous castings

A method of forming a templated casting involves incorporating a liquid feedstock into the channels of a honeycomb substrate to form a feedstock-laden substrate, and directionally solidifying the liquid feedstock within the channels.

Ribbon crystal string for increasing wafer yield

A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body.

Apparatus and method for detecting specific object pattern from image

A face area is detected from an image captured by an image pickup device, pixel values of the image are adjusted based on information concerning the detected face area, a person area is detected from the adjusted image, and the detected face area is integrated with the detected person area. With this configuration, it is possible to accurately detect an object even in a case, for example, where the brightness is varied.

Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal grown using the ammonothermal method

Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method.

Bulk Growth Grain Controlled Directional Solidification Device and Method

A solidification system is provided and includes a crucible, heater, insulation, movable insulation, and radiation regulator. The crucible is configured to retain a volume of silicon. The heater is to heat the crucible. The heater being configured to provide sufficient heat to melt the volume of silicon. The insulation is to reduce heat loss from a first portion of the crucible. The movable insulation to regulate heat loss from a second portion of the crucible. The radiation regulator is to regulate radiant heat loss over the second portion of the crucible. The radiation regulator is configured to modulate a size of an opening in the radiation regular through which radiant heat dissipates from.

Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

Method and an apparatus for growing a silicon single crystal from a melt

Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.

Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon

A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod.

Weir method for improved single crystal growth in a continuous czochralski process

A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber.

Apparatus for manufacturing silicon substrate

There is disclosed an apparatus for manufacturing a silicon substrate including a crucible part, a molding part extended from an outlet of the crucible part, the molding part comprising a molding space where a silicon substrate is formed, and a dummy bar inserted in the molding space from a predetermined portion of the molding part, wherein the dummy bar is formed of a single-crystalline material.

Graphite heater

A graphite heater includes a main body, and a plurality of support portions. The main body includes a tubular portion and a plurality of terminal portions. The plurality of terminal portions extend outward along a central axis of the tubular portion. Each of the plurality of terminal portions has a first planar surface facing the central axis or facing an opposite side of the central axis. The plurality of support portions are each joined to each of the plurality of terminal portions. Each of the plurality of support portions has a second planar surface. The first planar surface and the second planar surface are joined through a carbon-based adhesion layer.

Crystal growth system and method for lead-contained compositions using batch auto-feeding

This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

Temperature-controlled purge gate valve for chemical vapor deposition chamber

The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl 3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

Silica glass crucible, method for manufacturing same, and method for manufacturing silicon single crystal

A method for manufacturing a silica glass crucible, includes: preparing a crucible base material that is made of silica glass and has a crucible shape; fabricating a synthetic silica glass material based on a direct method or a soot method; processing the synthetic silica glass material into the crucible shape without being pulverized; and bonding an inner wall of the crucible base material and an outer wall of the synthetic silica glass material processed into the crucible shape through a silica powder by performing a heat treatment. As a result, it is possible to provide the silica glass crucible that can avoid occurrence of dislocations of silicon single crystal at the time of manufacturing the silicon single crystal, has high heat-resisting properties, and can suppress a reduction in productivity and yield ratio, the manufacturing method thereof, and the method for manufacturing silicon single crystal using such a silica glass crucible.

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE

A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.

Crucible and method for producing a silicon block

A crucible for producing a silicon block comprises a crucible wall surrounding an interior and an opening for filling silicon melt into the interior, wherein the crucible wall comprises at least one doping means for providing dopant for the silicon melt.

Plane orientation of crystalline structures

Systems and method for creating crystalline parts having a desired primary and secondary crystallographic orientations are provided. One embodiment may take the form of a method of manufacturing a part having a crystalline structure. The method includes melting aluminum oxide and drawing the melted aluminum oxide up a slit. Additionally, the method includes orienting the seed crystal relative to a growth apparatus such that a crystalline structure grows having a desired primary plane and a desired secondary plane orientation. Moreover, the method includes pulling the crystal as it forms to create a ribbon shaped crystalline structure and cutting a part from the crystalline structure.

Crystal growth apparatus and manufacturing method of group iii nitride crystal

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

METHOD OF MAKING A SAPPHIRE COMPONENT

Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well. 1. A method of making a sapphire component , the method comprising machining a sapphire single crystal having a length , a width and a thickness , wherein the length>width>thickness , the width is not less than 28 cm , and the thickness is not less than 0.5 cm into the sapphire component.2. The method of claim 1 , wherein machining the sapphire single crystal comprises grinding the sapphire single crystal.3. The method of claim 1 , wherein machining the sapphire single crystal comprises lapping the sapphire single crystal.4. The method of claim 1 , wherein machining the sapphire single crystal comprises polishing the sapphire single crystal.5. The method of claim 1 , wherein machining the sapphire single crystal comprises removing bulk material from the sapphire single crystal.6. The method of claim 1 , wherein machining the sapphire single crystal comprises machining the sapphire single crystal into an optical component.7. The method of claim 1 , wherein machining the sapphire single crystal comprises machining the sapphire single crystal into an optical window.8. The method of claim 7 , wherein the optical window is machined into a geometric configuration for an infrared and laser guidance system claim 7 , a military sensing and targeting system claim 7 , or an infrared and visible wavelength vision system.9. The method of claim 1 , wherein the sapphire single crystal is transparent in the infrared and visible ...

Seed crystal holder, crystal growing device, and crystal growing method

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Unseeded silicon carbide single crystals

High volumes of relatively large, single crystals of silicon carbide are grown in a reactor from a point source, i.e., unseeded growth. The crystals may be grown colorless or near colorless and may be processed for many uses, including use as a diamond substitute for jewelry, as an optical element such as a watch face or a lens, or for other desired end uses.

Reactor designs for use in ammonothermal growth of group-iii nitride crystals

Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

Method and apparatus for fabricating free-standing group iii nitride crystals

The method for fabricating a free-standing group III nitride plate ( 6 ) comprises the steps of growing at a growth temperature within a growth reactor ( 7 ) a first group III nitride layer ( 2 ) on a foreign growth substrate ( 1 ); growing at the growth temperature within the growth reactor ( 7 ) a second group III nitride layer ( 5 ) on the first group III nitride layer ( 2 ); and separating by laser lift-off the second group III nitride layer ( 5 ) from the growth substrate ( 1 ) so as to form a free-standing group III nitride plate ( 6 ). According to the present invention, the step of separating the second group III nitride layer ( 5 ) from the growth substrate ( 6 ) is performed at the growth temperature and within the growth reactor ( 7 ), and the method further comprises a step of treating the first group III nitride layer ( 1 ) by laser treatment at the growth temperature within the growth reactor ( 7 ) so as to provide stress relaxation areas ( 4 ) in the first group III nitride layer ( 2 ).

CONCENTRIC FLOWER REACTOR

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber 1. A method of fabricating semiconductor nanowires comprising:providing a first gas stream to a first reaction chamber, wherein the first gas stream comprises a first precursor for fabricating the semiconductor nanowires;providing a second gas stream to the first reaction chamber, wherein the second gas stream forms a sheath separating the first gas stream from a wall of the first reaction chamber;providing nanowire growth catalyst particles;adding a first dopant gas having a first conductivity type to the first gas stream to grow semiconductor nanowires of the first conductivity type in a gas phase in the first reaction chamber; andadding a second dopant gas having a second conductivity type after the step of adding the first dopant gas to form a p-n or p-i-n junction in the semiconductor nanowires;{'sub': x', '1-x, 'wherein the semiconductor nanowires comprise single crystal Si, Ge, or SiGesemiconductor nanowires, wherein 0≤x≤1.'}2. The method of claim 1 , wherein the nanowire growth catalyst particles are provided from an aerosol in at least one of the first gas stream or the second gas stream.3. The method of claim 2 , wherein:the nanowire growth catalyst particles are provided from an aerosol in the first gas stream; andthe first gas stream containing the catalyst particles flows sequentially through one or more reaction zones of the first reaction chamber such that the semiconductor nanowires grow from the catalyst particles and the semiconductor nanowires grown after passage through the reaction zones are carried by the first gas stream surrounded the second gas stream sheath.4. The method ...

CRYSTAL GROWING SYSTEMS AND CRUCIBLES FOR ENHANCING HEAT TRANSFER TO A MELT

A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. 1. A system for growing an ingot from a melt , the system comprising:an outer crucible defining an outer cavity for containing the melt;an inner crucible located within the outer cavity, the inner crucible having a central longitudinal axis, the inner crucible including a second sidewall and a second base extending radially inward from the second sidewall and having an opening therein, the opening in the second base, the second crucible, and the outer crucible concentric with the central longitudinal axis; anda first, annular weir separating the outer crucible from the inner crucible, the first weir separate from the inner crucible and the outer crucible.2. The system of claim 1 , wherein the opening has a first diameter claim 1 , the first weir has a second diameter claim 1 , the second sidewall has a third diameter claim 1 , the third diameter being greater than the first and second diameters.3. The system of claim 1 , wherein the opening is defined by an annular rim tapered with respect to the central longitudinal axis claim 1 , the rim being substantially aligned with the first weir.4. The system of claim 1 , wherein the first weir has a plurality of first weir passageways extending therethrough to permit the melt to flow between an outer melt zone and an inner melt zone.5. The system of claim 4 , further comprising a second claim 4 , annular weir positioned radially outward from the first weir and supporting the inner crucible along the second base claim 4 , the second weir having a plurality of second weir passageways extending ...

ADVANCED CRUCIBLE SUPPORT AND THERMAL DISTRIBUTION MANAGEMENT

An advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes a plurality of spaced crown features disposed on the support base plate. The crown features receive and vertically support the crucible and are spaced to support the crucible and to allow heat flow between the plurality of crown features. In doing so, a top surface of spaced crown features are in direct contact with the crucible. 1. An apparatus , comprising:a crucible;a support base plate; anda plurality of spaced crown features disposed on the support base plate, the crown features configured to receive and vertically support the crucible, the plurality of spaced crown features spaced to support the crucible and to allow heat flow between the plurality of spaced crown features, wherein a top surface of the plurality of spaced crown features are in direct contact with the crucible.2. The apparatus as in claim 1 , further comprising:an aperture in the support base plate configured to receive a heat exchanger.3. The apparatus as in claim 2 , whereinthe recessed cavity is contained within an interior space defined by the plurality of spaced crown features and surrounding the aperture; andthe insulation surrounds a portion of the heat exchanger.4. The apparatus as in claim 3 , further comprising:a sheet covering the insulation on a side of the insulation facing the crucible, wherein a gap is formed between the low emissivity sheet and a bottom surface of the crucible, and the sheet is configured to reflect radiation back to the bottom surface of the crucible within the gap.5. The apparatus as in claim 1 , wherein each of the spaced crown features include:a replaceable shim on each of the plurality of crown features.6. The apparatus as in claim 1 , wherein the support base plate defines a plurality of slotted ...

Holder, crystal growing method, and crystal growing apparatus

A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.

Heat Shield For Improved Continuous Czochralski Process

An apparatus for growing ingots by the Czochralski method is described. The ingots are drawn from a melt/crystal interface in a quantity of molten silicon replenished by crystalline feedstock. The apparatus includes a crucible configured to hold the molten silicon and a weir supported in the crucible. The weir is configured to separate the molten silicon into an inner growth region from an outer region configured to receive the crystalline feedstock. The weir includes a sidewall extending vertically and a top wall. An annular heat shield is disposed on the top wall of the weir that covers at least about 70% of the outer region.

Film forming apparatus and film forming method

According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

DEVICE AND METHOD FOR PRESSURE-DRIVEN PLUG TRANSPORT AND REACTION

The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid. 115.-. (canceled)16. A system comprising:a microfluidic device comprising a substrate having a plurality of traps in fluidic communication with a channel, each trap comprises an opening along a side of the channel shaped and/or sized to accommodate a partition of a sample fluid within; anda detector to detect, monitor, or analyze each partition of sample fluid retained within a corresponding trap, the detector to detect emissions from one or more detectable markers associated with a target molecule in response to the occurrence of a polymerase-chain reaction (PCR) reaction in one or more partitions of sample fluid.17. The system of claim 16 , further comprising a plurality of partitions of sample fluid positioned within the plurality of traps in response to flow of an immiscible fluid through the channel.18. The system of claim 17 , wherein each of the plurality of partitions of sample fluid is at least partially surrounded by the immiscible fluid.19. The system of claim 18 , wherein each of the plurality of partitions of sample fluid is separated from one another and retained within a respective trap via the immiscible fluid positioned over the opening of each trap.20. The system of claim 17 , wherein the immiscible fluid is an oil.21. The system of claim 16 , wherein the target molecule is a biological molecule.22. The system of claim 21 , wherein the sample fluid comprises at least one biological molecule and one or more chemical reagents for conducting a biological reaction with the at least one biological molecule resulting in the formation of a reaction product upon undergoing the PCR reaction.23. The system of claim 22 , wherein the detector measures at least one property associated with a partition of sample fluid based on detection of emissions from the one or more ...

Method for forming group iii/v conformal layers on silicon substrates

A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.

METHODS FOR GROWING A CRYSTAL INGOT WITH REDUCED DISLOCATIONS FROM A CRUCIBLE

Methods for growing a reduced dislocation crystal ingot in an ingot growing system are disclosed. The system has a first crucible with a first base and a first sidewall extending upward from the first base to define an outer cavity. The method includes placing a weir in the outer cavity, placing a second crucible on the weir, placing feedstock material into the outer cavity, and melting the feedstock material to allow movement of the melt from the outer cavity inward of an intermediate cavity and into an inner cavity. 1. A method for growing a crystal ingot from a melt in a crystal growing system , the system including a first crucible having a first base and a first sidewall extending upward from the first base , the first crucible defining an outer cavity inward of the first wall , the first base having a top surface , the method comprising:placing a weir along the top surface of the first base to inhibit movement of the melt from a location outward of the weir to a location inward of the weir;placing a second crucible within the outer cavity at a location on top of the weir, the second crucible having a second base and a second sidewall forming an outer cavity, the second base having a crucible passageway extending therethrough, the crucible passageway located inward of the weir, the weir forming an intermediate cavity inward of the weir and between the first crucible and the second crucible, the weir contacting at least one of the first base of the first crucible and the second base of the second crucible continuously around a circumference of the weir;placing feedstock material into the outer cavity;melting the feedstock material to form the melt to allow movement of the melt from the outer cavity inward of the intermediate cavity and into the inner cavity.2. The method of claim 1 , further comprising the steps of lowering a seed crystal into the melt and raising the seed crystal with a growing crystal ingot out of the melt.3. The method of claim 2 , wherein ...

Methods and Apparatuses for Manufacturing Geometric Multicrystalline Cast Silicon and Geometric Multicrystalline Cast Silicon Bodies for Photovoltaics

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

APPARATUS FOR PRODUCING BULK SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A sublimation furnace for forming silicon carbide comprising a furnace shell , at least one heating element positioned outside the furnace shell , and a hot zone positioned inside the furnace shell surrounded by insulation , the hot zone comprising:a) a crucible having an upper region and a lower region;b) a crucible cover sealing the crucible;c) a substantially solid silicon carbide precursor positioned in the lower region of the crucible; (1) a silicon carbide seed having a top surface and a bottom surface, the top surface exposed to the upper region of the crucible, the bottom surface facing the substantially solid silicon carbide precursor, wherein the bottom surface faces the lower region of the crucible, and', '(2) a seed holder having an upper section and a lower section that hold the silicon carbide seed therebetween, the seed holder comprising a plurality of vapor release openings formed around a center axis of the seed holder in at least one of the upper and lower sections of the seed holder; and, 'd) a seed module disposed in the upper region of the crucible, the seed module comprisinge) a vapor release ring at least partially disposed above the upper section of the seed holder, the vapor release ring comprising one or more holes that align with one or ...

RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS

In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design. 1. An RF choke assembly , comprising:a gas feed tube; anda ferrite element coupled to and at least partially surrounding the gas feed tube.2. The assembly of claim 1 , wherein the ferrite element comprises a plurality of cylinders.3. The assembly of claim 2 , wherein the plurality of cylinders are spaced apart.4. An apparatus claim 2 , comprising:an RF power source;a gas source;a remote plasma source; and a gas feed tube; and', 'a ferrite element coupled to the gas feed tube., 'an RF choke assembly coupled between the RF power source and the remote plasma source, the RF choke assembly comprising5. The apparatus of claim 4 , wherein the remote plasma source is upstream from the RF choke assembly.6. The apparatus of claim 4 , further comprising: a load capacitor;', 'a tuning capacitor; and', 'an impedance of the RF choke assembly., 'a Pi network coupled to the RF choke assembly, the Pi network comprising7. The apparatus of claim 4 , further comprising: a load capacitor;', 'a tuning capacitor; and', 'the impedance of the RF choke assembly., 'a reverse L-type matching network coupled to the RF choke assembly, the reverse L-type matching network comprising8. The apparatus of claim 7 , wherein the ...

SINGLE CRYSTAL INGOTS WITH REDUCED DISLOCATION DEFECTS AND METHODS FOR PRODUCING SUCH INGOTS

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput. 1. A high purity single crystal ingot characterized by reduced dislocation defects and more uniform resistivity or conductivity axially and radially made by the process comprising:growing the single crystal ingot from a seed crystal held at a crystal/melt interface in a wide diameter, low aspect ratio crucible for preventing formation of convection currents and minimizing oxygen in the melt, wherein said crucible includes a weir surrounding the crystal;melting crystalline feedstock and providing dopant such that static thermal conditions are maintained at the crystal/melt interface during replenishment of the melt in the crucible; andseparately controlling a plurality of heaters disposed beneath the crucible for establishing controllable thermal zones across the melt, such that a uniform thermal distribution and is maintained across the radius of the growing ingot.2. The high purity single crystal ingot as set forth in wherein melting crystalline feedstock and providing dopant is ...

Semiconductor device and semiconductor device production system

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process

A doping and multi-chamber method and apparatus for the growth of material, directed toward Solid Phase Epitaxy (SPE) process, is disclosed. Different variations and features of this method and process are examined. The advantages of this method are the high throughput and the reduced operational cost of the production for semiconductor material and devices, such as III-V material (e.g. GaAs) and solar cell devices. It can be applied to many systems and devices/materials.

Method for growing group iii-nitride crystals in supercritical ammonia using an autoclave

A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

Method of manufacturing composite crucible

A method of manufacturing a composite crucible includes: supplying mullite material powder to an upper region of a mold, and supplying second silica powder to a lower region provided below the upper region while rotating the mold; supplying third silica powder on an inner surface side of a layer made of the mullite material powder and the second silica powder; heating and fusing the mullite material powder, the second silica powder, and the third silica powder to form an opaque vitreous silica layer provided on the outer surface of the crucible, a transparent vitreous silica layer provided on an inner surface side of the crucible, and a mullite reinforcement layer provided on the outer surface side of an upper end portion of the crucible.

PULLING A SEMICONDUCTOR SINGLE CRYSTAL ACCORDING TO THE CZOCHRALSKI METHOD AND SILICA GLASS CRUCIBLE SUITABLE THEREFOR

In a known method for pulling a semiconductor single crystal according to the Czochralski method, a semiconductor melt is produced in a silica glass crucible and the semiconductor single crystal is pulled from said melt. The inner wall of the silica glass crucible and the exposed melt surface are in contact with one another and with a respective melt atmosphere in the region of a contact zone running radially around the crucible inner wall, and primary oscillations of the melt are triggered in said contact zone. On this basis, in order to provide a method characterised by reduced melt vibrations and in particular by a simple, short accretion process, according to the invention primary oscillations are triggered which differ from one another in their frequency. 131-. (canceled)32. A quartz glass crucible configured for use in for pulling a semiconductor single crystal according to the Czochralski method , said crucible comprising:an inner wall of the crucible having a circumferentially extending contact zone that has a variation in an at least one physical, chemical or corporeal characteristic thereof,wherein said the characteristic which that varies along the circumferentially extending contact zone is the an internal structure,{'sub': max', 'min, 'wherein the internal structure is defined as a bubble content of quartz glass of the inner wall of the crucible, said bubble content being determined over a measurement length of 1 cm, the bubble content varying between a maximum value Pand a minimum value Palong the circumferentially extending contact zone.'}33. The quartz glass crucible according to wherein the characteristic has a first state and a second state claim 32 , and the variation of the characteristic along the circumferentially extending contact zone is such that the characteristic changes step by step or gradually from the first state to the second state.34. The quartz glass crucible according to claim 33 , wherein the stepwise or gradual change from the ...

Crucible for producing compound crystal, apparatus for producing compound crystal, and method for producing compound crystal using crucible

A crucible for use in producing a compound crystal in which a pre-treated product is made by melting a powdery or granular compound raw material and then cooling and solidifying it in a pre-treatment furnace, and the compound crystal is grown by melting the pre-treated product and then cooling and solidifying it in a crystal growing furnace, the crucible comprising: a first member having a bottom portion and a cylindrical portion; and a hollow cylindrical second member that is capable to be connected to the cylindrical portion and to be separated therefrom, wherein: in a state in which the first member and the second member are connected together, a large capacity crucible for manufacture of the pre-treated product is formed; and in a state in which the first member and the second member are separated from one another, a small capacity crucible for crystal growth is formed.

Carbon crucible and method of manufacturing same

A carbon crucible ( 1 ) has a structure including a straight trunk portion ( 9 ) and a tray portion ( 10 ) vertically separated from each other. The straight trunk portion ( 9 ) is made of a carbon fiber-reinforced carbon composite material and the tray portion ( 10 ) is made of graphite. An upper end face of the tray portion ( 9 ) is provided with a step portion ( 11 ) having an outer circumference-side region that is higher relative to an inner circumference-side region thereof. The straight trunk portion ( 9 ) is fitted to the step portion ( 11 ), and in the straight trunk portion ( 9 ) and the step portion ( 9 ) that are fitted to each other, a gap is provided between an inner circumferential surface ( 11 a ) of the step portion ( 11 ) and an outer circumferential surface ( 9 a ) of the straight trunk portion ( 9 ). The gap is preferably from 0.1% to 1.0% of the diameter of the straight trunk portion.

SINGLE CRYSTAL INGOTS WITH REDUCED DISLOCATION DEFECTS AND METHODS FOR PRODUCING SUCH INGOTS

An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput. 1. A process for producing a high purity single crystal silicon ingot characterized by reduced dislocation defects and more uniform resistivity or conductivity axially and radially , the process comprising:growing the single crystal silicon ingot from a seed crystal held at a crystal/melt interface in a wide diameter, low aspect ratio crucible having a ratio of diameter to height of at least 4:1 for preventing formation of convection currents and minimizing oxygen in the melt, the crucible not being raised or lowered during growth of the single crystal silicon ingot, wherein said crucible includes:an outer sidewall; anda weir disposed interior to the crucible sidewall and surrounding the crystal, the weir being closer to the ingot than to the sidewall during growth of the ingot;melting crystalline feedstock and providing dopant such that static thermal conditions are maintained at the crystal/melt interface during replenishment of the melt in the crucible; andseparately controlling a ...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film. 1an insulating film having a rectangular or stripe pattern depression portion and projection portion; anda thin film transistor having a channel formation region that is placed between center and edge of the depression portion of the insulating film,wherein the channel formation region extends along a longitudinal direction of the rectangular or stripe pattern depression portion and projection portion.. A semiconductor device comprising: The present invention relates to a semiconductor device constructed by a semiconductor film that has a crystal structure, and more specifically, to a semiconductor device using a thin film transistor whose active layer is formed of a crystalline semiconductor film obtained through crystal growth on an insulating surface. The present invention also relates to a semiconductor device product ion system using laser light.In recent years, techniques for forming TFTs on a substrate have made great advancements and applications of TFTs to active matrix type semiconductor display devices are being developed. In particular, TFTs formed of polycrystalline semiconductor films ( ...

Float zone silicon wafer manufacturing system and related process

The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.

Method for crystal growth in a cell in direct thermal contact with the ambient environment

A crystal growing cell which has computerized temperature control and agitation means to inhibit crystal nucleation. The temperature is controlled semi-actively, i.e., by monitoring the temperature with a thermistor and balancing ambient heat loss with heat added to the system by heating resistors or heating elements. When the chemical is completely dissolved by heating the mixture to a temperature above the saturation temperature, the temperature is lowered. At the saturation temperature the temperature is initially reduced slowly to avoid crystal nucleation. The saturation temperature of the initial solution is selected to be at an intermediate temperature which is high enough that the amount of dissolved material is large enough to produce a large crystal or large crystal clusters, yet not so high that the solubility curve has a large slope and therefore requires a high degree of temperature control to avoid crystal nucleation in the solution.

Czochralski crucible for controlling oxygen and related methods

A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.

SEED CRYSTAL HOLDER, CRYSTAL GROWING DEVICE, AND CRYSTAL GROWING METHOD

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view. 1. A seed crystal holder for growing a crystal by a solution method , comprising:a seed crystal made of silicon carbide;a holding member above the seed crystal;a bonding agent configured to fix the seed crystal and the holding member; anda sheet member made of carbon which is interposed in the bonding agent in a thickness direction,wherein the sheet member comprises a through hole in the thickness direction, and an inside of the through hole is filled with a part of the bonding agent.2. The seed crystal holder according to claim 1 ,wherein the sheet member has an outer periphery larger than an outer periphery of the holding member in a plan view.3. The seed crystal holder according to claim 1 ,wherein the bonding agent comprises a cavity constituted with the seed crystal.4. The seed crystal holder according to claim 3 ,wherein the bonding agent further comprises a pore thereinside, and the cavity is larger than the pore, the pore being located between the sheet member and the holding member.5. The seed crystal holder according to claim 1 ,wherein the sheet member further comprises a plurality of through holes, and the number of the plurality of through holes increases as going to a center of the sheet member from an outer circumference.6. The seed crystal holder according to claim 1 ,wherein a part of the bonding agent covers a side surface of the sheet member.7. The seed crystal holder according to claim 1 ,wherein the sheet member includes carbon particles and silicon as a component.8. The seed ...

Method of manufacturing a pressure vessel for growing single crystals

An object of the present invention is to manufacture single crystals of high quality on an industrial production scale by preventing impurities from being mixed in single crystals when the single crystals are produced by the solvothermal method. A pressure vessel body 1, in which a supercritical state is maintained, is made of heat resistant alloy, a portion of the pressure vessel body is open, a corrosion-resistant mechanical lining 5 is provided on an inner face of the pressure vessel and on an entire outer circumferential edge of the opening, and the opening is sealed by an airtight mating face formed out of a corrosion-resistant mechanical lining, which is formed on the outer circumferential edge of the opening, and by an airtight mating face of the corrosion-resistant mechanical lining cover 6 on an inner face of the cover 3 through a corrosion-resistant gasket member. Since the pressure vessel body and the inner face of the cover are covered with the corrosion-resistant mechanical lining, corrosion can be prevented. The corrosion-resistant mechanical lining ensures the sealing property on the airtight mating face between the pressure vessel body and the cover and further effectively prevents corrosion in the airtight sealing portion and it becomes possible to repeatedly open and close the airtight sealing portion.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film. 1. (canceled)2. A display device comprising:a surface comprising a first projection and a first depression;a polycrystalline semiconductor film over the surface;a gate insulating film over the polycrystalline semiconductor film;a gate electrode over the gate insulating film;an insulating film over the gate electrode; andan electrode electrically connected to the polycrystalline semiconductor film,wherein a surface of the polycrystalline semiconductor film comprises a second projection and a second depression, andwherein the gate electrode and the first projection of the surface overlap each other.3. The display device according to claim 2 ,wherein the polycrystalline semiconductor film is in contact with an insulating material at the first projection of the surface.4. The display device according to claim 2 ,wherein the electrode is connected to the polycrystalline semiconductor film through a hole provided in the insulating film and the gate insulating film.5. The display device according to claim 2 ,wherein the polycrystalline semiconductor film comprises a first region and a second region,wherein the ...

System and method for forming a silicon wafer

An apparatus for forming a crystalline ribbon from molten silicon having a silicon ribbon support. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A controller configured to control the removal of heat from the melted ribbon of material in a direction substantially perpendicular to the surface of the molten silicon to effect crystal growth.

RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS

In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design. 1. An RF choke assembly , comprising:a gas feed tube; anda ferrite element coupled to and at least partially surrounding the gas feed tube.2. The assembly of claim 1 , wherein the ferrite element comprises a plurality of ferrite disks.3. The assembly of claim 2 , wherein the plurality of ferrite disks are spaced apart.4. The assembly of claim 1 , wherein the ferrite element comprises a plurality of cylinders.5. The assembly of claim 4 , wherein the plurality of cylinders are spaced apart.6. The assembly of claim 1 , wherein the ferrite element comprises a plurality of ferrite rods.7. The assembly of claim 6 , wherein the plurality of ferrite rods are spaced apart.8. An apparatus claim 6 , comprising:an RF power source;a gas source;a remote plasma source; and a gas feed tube; and', 'a ferrite element coupled to the gas feed tube., 'an RF choke assembly coupled between the RF power source and the remote plasma source, the RF choke assembly comprising9. The apparatus of claim 8 , wherein the remote plasma source is upstream from the RF choke assembly.10. The apparatus of claim 8 , further comprising: a load capacitor;', 'a tuning capacitor; and', 'an impedance of the RF choke assembly., 'a Pi ...

METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT

An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface. 1. A method for growing a crystalline sheet from a melt , the method comprising:providing a first cold block proximate a melt surface, the first cold block having an opening on a lower surface thereof that confronts the melt surface and defines a first cold area having a width in a first direction, the first cold area operable to provide localized cooling of a first region of the melt surface proximate the first cold block;determining that a crystalline layer attached to a crystalline seed has formed on the melt;pulling the crystalline seed along a path in a second direction perpendicular to the first direction so as to form a ribbon extending in the second directing and having a width in the first direction; andproviding a second cold block proximate the melt surface, the second cold block located downstream from the first cold block along the path and having an opening on a lower surface thereof that confronts the melt surface and defines a second cold area having a width in the first direction that increases from the first width to a second width, the second cold area operable to provide localized cooling of a second region of the melt surface proximate the first second block;wherein a vertical distance between the ...

RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS

In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design. 1. An RF choke assembly , comprising:a gas feed tube; anda ferrite element coupled to and at least partially surrounding the gas feed tube.2. The assembly of claim 1 , wherein the ferrite element comprises a plurality of ferrite disks.3. The assembly of claim 2 , wherein the plurality of ferrite disks are spaced apart.4. The assembly of claim 1 , wherein the ferrite element comprises a plurality of cylinders.5. The assembly of claim 4 , wherein the plurality of cylinders are spaced apart.6. The assembly of claim 1 , wherein the ferrite element comprises a plurality of ferrite rods.7. The assembly of claim 6 , wherein the plurality of ferrite rods are spaced apart.8. An apparatus claim 6 , comprising:an RF power source;a gas source;a remote plasma source; and a gas feed tube; and', 'a ferrite element coupled to the gas feed tube., 'an RF choke assembly coupled between the RF power source and the remote plasma source, the RF choke assembly comprising9. The apparatus of claim 8 , wherein the remote plasma source is upstream from the RF choke assembly.10. The apparatus of claim 8 , further comprising: a load capacitor;', 'a tuning capacitor; and', 'an impedance of the RF choke assembly., 'a Pi ...

Passivation of Nonlinear Optical Crystals

The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

Mono-crystalline silicon growth method

A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base. After solidifying a liquid surface of a silicon melt in the crucible to form a crystal, the heating power of the heating module is successively reduced to appropriately adjust the temperature around the crucible to effectively control a temperature gradient of a thermal field around the crucible, so as to form a mono-crystalline silicon ingot by solidifying the silicon melt.

MELT FIXTURE AND A SAPPHIRE COMPONENT

Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well. 1. A melt fixture comprising:a crucible;a die open to and extending along a length of the crucible; anda plurality of thermal shields overlying the crucible and adjacent to the die, the thermal shields having a stepped configuration.2. The melt fixture of claim 1 , wherein thermal shields include a first shield set positioned along a first lateral side of the die claim 1 , and a second shield set positioned along an opposite claim 1 , second lateral side the die.3. The melt fixture of claim 2 , wherein each of the first and second shield sets is generally symmetrical about a vertical central axis corresponding to midpoint of the die.4. The melt fixture of claim 1 , further comprising an afterheater disposed above the die and configured to receive an as-formed crystal sheet claim 1 , wherein the afterheater has a lower compartment and an upper compartment separated from each other by an isolation structure.5. The melt fixture of claim 1 , wherein thermal shields are substantially parallel to one another.6. The melt fixture of claim 5 , further comprising shield pins to hold the thermal shields in place.7. The melt fixture of claim 1 , wherein the thermal shields provide a static temperature gradient along the die.8. The melt fixture of claim 7 , wherein the thermal shields provide a temperature profile along the length of the die such that the temperature profile has a maximum temperature at about a midpoint of the die ...

METHOD OF MAKING LARGE SURFACE AREA FILAMENTS FOR THE PRODUCTION OF POLYSILICON IN A CVD REACTOR

The bulk polysilicon deposition rate of a Siemens method CVD reactor system having a power supply configured for deposition on a solid rod silicon filament of a specified diameter and length is increased by installing a high surface area silicon filament in the CVD reactor in lieu of the specified solid rod filament, the high surface area filament being dimensionally configured such that it can be used in place of the solid rod filament without reconfiguring or replacing the reactor power supply. The high surface area filament can be tubular, flat, or shaped with radial fins. Existing reactors thereby require only adaptation or replacement of filament supports to be adapted for use of the high surface area filament. The high surface area filament can be grown from silicon melt using the EFG method, so as to maintain a cross-sectional shape within a tolerance of +/−10%. 1. A CVD reactor for bulk production of polysilicon comprising:a base plate system configured with filament supports;an enclosure attachable to said base plate system so as to form a deposition chamber;a power supply adjusted and configured for use with a solid rod silicon filament having a specified solid rod diameter, a specified solid rod length, and a specified solid rod surface area;at least one high surface area silicon filament disposed within said chamber on said filament supports, said high surface area silicon filament having a length substantially equal to the solid rod length and a surface area greater than the solid rod surface area, while also being usable in the CVD reactor without reconfiguring or replacing the power supply of the CVD reactor;electrical feedthroughs in said base plate system, said electrical feedthroughs being adapted for connection of the power supply to both ends of said high surface area silicon filament;a gas inlet in said base plate system connectable to a source of silicon-containing gas; anda gas outlet in said base plate system whereby gas may be released from ...

Device for growing a flat single crystal from a seed crystal in a crystallisation solution and process for manufacturing this single crystal

A device for growing a flat single crystal from a seed in a crystallization solution. A support element has a support face; a blocking element comprising a blocking face, positioned at a predefined distance from the support face to block the growth of the single crystal in a direction perpendicular to the support face; a seed protection member, configured to protect the seed during a crystallization solution treatment phase and to free a growth zone positioned between the support face and the blocking face during a rotation of the support element; the blocking element comprises a holding member that cooperates with the protection member, the holding member being movable between a first position where it holds the protection member against the support face during the treatment phase and a second position where the holding member is separated from the protection member and participates in the formation of the blocking face.

Method for making barium-doped crucible and crucible made thereby

Making a barium-doped silica crucible includes forming a crucible by introducing into a rotating crucible mold bulk silica grains to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced into the crucible. Residual heat or additional heat at least partially melts the inner silica grain, allowing the barium-doped silica layer to fuse to the wall of the crucible to form a glossy inner layer. Next, at least a part of the barium-doped silica layer is roughened. Also described are the crucible made thereby as well as silicon ingots made using the crucibles as described herein.

High pressure reactor for supercritical ammonia

A high-pressure cylindrical reactor suitable for a high-pressure process using supercritical ammonia to form bulk crystals of group III nitride or transition metal nitride is disclosed. In one instance, the reactor has a reactor body and lid formed of precipitation hardenable Ni—Cr superalloy and is sealed by a gasket made of Ni-based metal. Ni content of the gasket is greater than Ni content of both the reactor body and lid. The gasket is tapered so that its thickest part is at or near the gasket's inner radius or circumference, and the thinnest part of the gasket is more than 0.2 inch thick and is at or near the gasket's outer radius or circumference. The gasket's surfaces are compressed at 60,000 psi or higher. This construction provides a consistent seal of the reactor for repeated use.

Mono-crystalline silicon growth apparatus

A mono-crystalline silicon growth apparatus is provided. The mono-crystalline silicon growth apparatus includes a furnace, a support base disposed in the furnace, a crucible disposed on the support base, and a heating module. The support base and the crucible do not rotate relative to the heating module, and an axial direction is defined to be along a central axis of the crucible. The heating module is disposed at an outer periphery of the support base and includes a first heating unit, a second heating unit, and a third heating unit. The first heating unit, the second heating unit, and the third heating unit are respectively disposed at positions with different heights corresponding to the axial direction.

Multi-Heater System For Growing High Quality Diamond And A Method For Growing The Same

Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

TECHNIQUE FOR CONTROLLING TEMPERATURE UNIFORMITY IN CRYSTAL GROWTH APPARATUS

A method of producing a crystalline material is provided that may include providing a crystal growth apparatus comprising a chamber, a hot zone, and a muffle. The hot zone may be disposed within the chamber and include at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, the method may include providing a muffle that surrounds at least two sides of the crucible to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section. 1. A method of producing a crystalline material comprising:providing a crystal growth apparatus comprising a chamber, and a hot zone within the chamber, the hot zone comprising at least one heating element, at least one heat removal system, a crucible containing at least solid feedstock, and a muffle surrounding the crucible, wherein the muffle is thicker in each of a plurality of corners thereof than in each of a plurality of sides thereof;orientating the muffle such that at least one corner of the plurality of corners of the muffle is positioned between a center of one side of the crucible and the heating element;heating the solid feedstock in the crucible with the heating system to form a liquid feedstock melt;uniformly applying heat from the heat zone to the feedstock from top to bottom through the muffle to control the temperature uniformity being applied to the solid feedstock; andcooling the heated feedstock to produce a crystalline material.2. The method of claim 1 , wherein the crystal growth apparatus is a directional solidification furnace.3. The method of claim 1 , wherein the heat removal system comprises a heat exchanger positioned beneath the crucible.4. The method of claim 1 , further comprising forming the feedstock into boule having a square or rectangular shape cross section.5. The method of claim 1 , wherein the muffle includes a cover.6. The method ...

METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES

Pillared particles of silicon or silicon-comprising material and a method of fabricating the same are disclosed. These particles may be used to create both a composite anode structure with a polymer binder, a conductive additive and a metal foil current collector, and an electrode structure. The structure of the particles overcomes the problems of charge/discharge capacity loss. 1. A particle comprising a particle core and a plurality of elongate structures coating one or more surfaces of the particle , each extending outwardly from the particle core from a first end to a second end , wherein each of the plurality of elongate structures is attached to the core at the first end of the elongate structure and the second end of the elongate structure is an unattached free end , and wherein the elongate structures are formed from silicon.2. A particle as claimed in claim 1 , wherein the fraction of the surface area of the particle core occupied by the elongate structures is in the range of 0.10 to 0.50.3. A particle as claimed in claim 2 , wherein the particle has a diameter of at least 0.5 μm and the elongate structures have an aspect ratio of greater than 20:1.4. A particle as claimed in wherein the particles have a first dimension in the range of 10 μm to 1 mm.5. A particle as claimed in claim 1 , wherein the elongate structures have a diameter in the range of 0.08 to 0.70 microns.6. A particle as claimed in in which the elongate structures have a length from the first end to the second end in the range of 4 to 100 microns.7. A particle as claimed in claim 1 , wherein the elongate structures are formed from n-type silicon claim 1 , p-type silicon claim 1 , or metallurgical grade silicon.8. A particle as claimed in wherein the elongate structures have a silicon purity of 90.00 to 99.95% by mass.9. A particle as claimed in in which the plurality of elongate structures coat one or more surfaces of each particle.10. A particle as claimed in claim 1 , wherein in each of ...

Crystal growth apparatus and thermal insulation cover of the same

A crystal growth apparatus includes a crucible, a heating device, a thermal insulation cover, and a driving device. The crucible contains materials to be melted, wherein the heating device heats the crucible to melt the materials; the thermal insulation cover is provided upon the materials, wherein the thermal insulation cover includes a main body, which has a bottom surface facing an interior of the crucible, and a insulating member being provided at the main body; the driving device moves the thermal insulation cover towards or away from the materials, whereby, the thermal insulation cover effectively blocks heat conduction and heat convection, which prevents thermal energy from escaping out of the crucible.

FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. 1. A manufacturing apparatus for a ferroelectric crystal film , comprising:a first apparatus forming a ferroelectric seed crystal film having an orientation in a predetermined face over a substrate in epitaxial growth by a sputtering method;a second apparatus performing coating to form an amorphous film including ferroelectric material over said ferroelectric seed crystal film by a spin-coat coating method; anda third apparatus heating said ferroelectric seed crystal film and said amorphous film in an oxygen atmosphere to oxidize and crystallize said amorphous film, and thereby forming a ferroelectric coated-and-sintered crystal film.2. The manufacturing apparatus for a ferroelectric crystal film according to claim 1 , whereinsaid ferroelectric coated-and-sintered crystal film has an orientation in the same face as said predetermined face.3. The manufacturing apparatus for a ferroelectric crystal film according to claim 1 , wherein{'sub': 3', '3, 'each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a Pb(Zr, Ti)Ofilm or a (Pb, A) (Zr, Ti)Ofilm and A is configured with at least one kind selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La.'}4. The manufacturing apparatus for a ferroelectric crystal film according to claim 3 , wherein{'sub': 3', '3, 'claim-text': {'br': None, '60/40≤Zr/Ti≤40/60\u2003\u2003(1)'}, 'a Zr/Ti ratio in the number of elements for said Pb(Zr, Ti)Ofilm or (Pb, A) (Zr, Ti)Ofilm satisfies the following formula (1).'}5. The manufacturing apparatus for a ferroelectric crystal film according to claim 3 , wherein{'sub': 3', '3, 'claim-text': [{'br': None, 'Pb/(Zr+Ti)<1.06\u2003\u2003(2)'}, {'br': None, '(Pb+A)/(Zr+Ti)≤1.35\u2003\u2003(3)'}], 'each ratio in the number of ...

Apparatus for controlling heat flow within a silicon melt

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

Method for cleaning exhaust passage for semiconductor crystal manufacturing device

Dust that is accumulated in an exhaust passage provided in a chamber, the exhaust passage for discharging gas in the chamber of a semiconductor crystal manufacturing device, is removed by being sucked from the outside of the chamber. Moreover, an opening and closing valve for cleaning that is detachably attached to an opening of the exhaust passage, the opening facing the chamber, is opened and closed intermittently in a suction state. Furthermore, the opening and closing valve for cleaning is driven by a valve driving unit. The dust accumulated in the exhaust passage is removed efficiently, whereby the time required to clean the exhaust passage is shortened and fluctuations of the pressure inside the chamber when a semiconductor crystal is manufactured are suppressed.

SOLAR MODULE STRUCTURES AND ASSEMBLY METHODS FOR THREE-DIMENSIONAL THIN-FILM SOLAR CELLS

A method for assembling a solar module structure comprises patterning a frontside and a backside of a double-sided printed circuit board coated with metallic foils according to desired frontside and backside interconnect layouts; applying a first coating layer to the rear side of a plurality of three-dimensional thin-film solar cells, each three-dimensional thin-film solar cell comprising: a three-dimensional thin-film solar cell substrate comprising emitter junction regions and doped base regions; emitter metallization and base metallization regions; the three-dimensional thin-film solar cell substrate comprising a plurality of single-aperture unit cells; placing the three-dimensional thin-film solar cells on the frontside of the double-sided printed circuit board; preparing a solar module assembly, comprising: a glass layer; a top encapsulant layer; the plurality of three-dimensional thin-film solar cells on the frontside of the double-sided printed circuit board; a rear encapsulant layer; a protective back plate; and sealing and packaging the solar module assembly. 1. A method for assembling a solar module structure , comprising:patterning a frontside and a backside of a double-sided printed circuit board coated with metallic foils according to desired frontside and backside interconnect layouts; a three-dimensional thin-film solar cell substrate comprising emitter junction regions and doped base regions;', 'emitter metallization regions; and', 'base metallization regions;', 'wherein said three-dimensional thin-film solar cell substrate comprises a plurality of single-aperture unit cells;, 'applying a first coating layer to the rear side of a plurality of three-dimensional thin-film solar cells, each three-dimensional thin-film solar cell comprisingplacing said plurality of three-dimensional thin-film solar cells on the frontside of said double-sided printed circuit board; a glass layer;', 'a top encapsulant layer;', 'said plurality of three-dimensional thin-film ...

APPARATUS AND A METHOD OF FORMING A SINGLE CRYSTAL SHEET

Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well. 113-. (canceled)14. A method of forming a sapphire single crystal sheet , the method comprising providing a melt in a crucible having a die; and drawing the sapphire single crystal sheet from the die , wherein the sapphire single crystal sheet has a length , a width , and a thickness , wherein the length>width>thickness , the width is not less than 15 cm , and the thickness is not less than 0.5 cm , and a thermal gradient along a length of the die is not greater than 0.6° C./cm.15. The method of claim 14 , wherein drawing the sapphire single crystal sheet comprises raising the seed crystal at a rate of 3 cm/hour to 30 cm/hour.16. The method of claim 14 , wherein the thermal gradient is no greater than 0.4° C./cm.17. The method of claim 14 , wherein the thermal gradient is no greater than 0.3° C./cm.18. The method of claim 14 , further comprising machining the sapphire single crystal sheet to form a machined sapphire component.19. The method of claim 18 , wherein machining comprises grinding claim 18 , lapping claim 18 , polishing claim 18 , or bulk material removal/shaping of the sapphire single crystal.20. The method of claim 19 , wherein machining the sapphire single crystal sheet comprises machining the sapphire single crystal sheet into an optical window.21. The method of claim 20 , wherein machining the sapphire single crystal sheet comprises machining the sapphire single crystal sheet into a geometric ...

Method of casting ingot and containing device of ingot casting furnace for containing materials of ingot

A method of casting an ingot includes the following steps: place solid silicon raw materials on a bottom of a containing device, wherein the containing device includes a container and a graphite layer provided on a surrounding wall and an inner bottom of the container, and the solid silicon raw materials are stacked upon the graphite layer on the inner bottom; heat the container to melt the solid silicon raw material into liquid state; cool the container from the bottom up till all of the silicon raw materials are crystallized and solidified. The solidified silicon raw materials become an ingot. Whereby, the graphite layer can effectively prevent impurities of the container from contaminating the ingot.

APPARATUS FOR CONTROLLING HEAT FLOW WITHIN A SILICON MELT

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt. 1. A method to process a melt comprising:providing the melt in a crucible, the melt having an exposed surface;providing heat through the melt to the exposed surface by heating a first side of the crucible opposite the exposed surface with a heater; andproviding within the crucible a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt, wherein the heat diffusion barrier assembly is disposed below the exposed surface, and wherein the heater is disposed to generate in the isolation region a first heat flow density at the exposed surface, and is arranged to generate in the outer region a second heat flow density at the exposed surface, less than the first heat flow density, wherein the heat diffusion barrier assembly comprises a first heat diffusion barrier and second heat diffusion barrier that are angled, wherein the isolation region is wider toward a bottom of the crucible, wherein top portions of the first and second heat diffusion barriers are free and unattached to other structures such that the melt is disposed between the first heat diffusion barrier and the second heat diffusion barrier at a top portion of the diffusion barrier assembly.2. The method of claim 1 , wherein the melt is a silicon melt claim 1 , and wherein at a top portion of the isolation region a heat flow is 30 W/cmto 40 W/cm.3. The method of claim 1 , wherein at ...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film. 1. A method for manufacturing a semiconductor device comprising:forming a semiconductor film over a surface;forming a polycrystalline semiconductor film by irradiating the semiconductor film with a laser light;forming a gate insulating film over the polycrystalline semiconductor film;forming a gate electrode over the gate insulating film;forming an insulating film over the gate electrode; andforming an electrode electrically connected to the polycrystalline semiconductor film,wherein the surface comprises a first projection and a first depression,wherein a surface of the polycrystalline semiconductor film comprises a second projection and a second depression, andwherein the gate electrode and the first projection of the surface overlap each other.2. The method according to claim 1 ,wherein the laser light is a continuous wave laser light.3. The method according to claim 1 ,wherein the semiconductor film is continuously formed over a silicon oxide film without exposure to the air.4. The method according to claim 1 ,wherein the polycrystalline semiconductor film is formed using a catalyst when crystallizing ...

Apparatus for producing group-iii nitride semiconductor crystal

An apparatus for producing a Group-III nitride semiconductor crystal includes a raw material reaction chamber, a raw material reactor which is provided in the raw material reaction chamber and generates a Group-III element-containing gas, a board-holding member configured to hold a board in the raw material reaction chamber, a raw material nozzle configured to spray the Group-III element-containing gas toward the board, a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center, a heater for heating the raw material reaction chamber, the raw material nozzle, the nitrogen source nozzle, and the board-holding member, and a rotation mechanism for rotating the board-holding member.

Three-Dimensional Semiconductor Template for Making High Efficiency Thin-Film Solar Cells

A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.

Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods

A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

Rotor-stator apparatus and process for the formation of particles

The present invention relates to the use of a high intensity, in-line rotor-stator apparatus to produce fine particles via antisolvent, reactive, salting out or rapid cooling precipitation and crystallization.

Quartz glass crucible and method of manufacturing the same

Ein bekannter Quarzglastiegel zum Kristallziehen weist eine Tiegelwandung auf, umfassend eine Außenschicht, die in einem äußeren Bereich mit einem Kristallisationspromotor versehen ist, der beim Aufheizen des Quarzglastiegels beim bestimmungsgemäßen Einsatz beim Kristallziehen eine Kristallisation von Quarzglas unter Bildung von Cristobalit bewirkt. Um ausgehend hiervor einen Quarzglastiegel mit langer Standzeit bereitzustellen wird vorgeschlagen, dass der Kristallisationspromotor eine in Quarzglas - zusätzlich zu Silicium - als Netzwerkbildner wirkende erste Komponente und eine in Quarzglas als Trennstellenbildner wirkende, alkalimetallfreie zweite Komponente enthält, und dass die besagten Komponenten in einem eine Schichtdicke von mehr als 0,2 mm aufweisenden Dotierungsbereich (8) der Außenschicht (6) enthalten und darin eingeschlossen sind. A known quartz glass crucible for crystal pulling has a crucible wall, comprising an outer layer which is provided in an outer region with a crystallization promoter which, when the quartz glass crucible is heated up and is used as intended in crystal pulling, causes crystallization of quartz glass to form cristobalite. In order to provide a quartz glass crucible with a long service life based on this, it is proposed that the crystallization promoter contains a first component which acts as a network former in quartz glass - in addition to silicon - and an alkali metal-free second component which acts as a separation point former in quartz glass, and that the said components all have a layer thickness of more than 0.2 mm doping region (8) of the outer layer (6) and are enclosed therein.

METHOD AND DEVICE FOR THE DRAWING OF MONOCRISTALLINE SILICON RODS

Method and appliance for pulling single crystals

The invention relates to a process for pulling single crystals from a melt of semiconductor material, in the course of which process a monocrystalline (single-crystal) seed crystal grows into a single crystal as a result of the seed crystal being dipped into the melt and being raised in a controlled manner in the direction perpendicular to the melt, while the melt forms a molten pool which is retained on a support body solely by the surface tension and by electromagnetic forces of an induction coil, the process being characterised in that during the growth of the single crystal the melt is replenished (recharged) with semiconductor material in solid or liquid form. The invention further relates to an appliance for carrying out the process.

Verfahren zur Züchtung eines Einkristalls.

Quartz glass crucible, its process of manufacture and use

A coated quartz glass crucible is provided which comprises: a quartz glass crucible; a glass layer formed on at least a part of the outer and/or inner surface of the quartz glass crucible; wherein the glass powder layer contains silica glass powder, the silica glass powder containing: more than 20 weight % of fine silica particles having a particle size of less than 10 µm; and coarse silica particles having a particle size of from 10 to 150 µm.

Chemical mechanical polishing of dual orientation polycrystalline materials

본 발명은 연마되는 다결정 표면의 결정면들 각각의 상대적인 산화율들에 대해 영향을 주도록 선택된 극성을 갖는 화학적 활성 슬러리를 사용하는 화학 기계적 연마(CMP) 방법에 관한 것이다. 슬러리 극성은 CMP 공정 동안 결정면들 각각으로부터의 재료 제거 속도들이 균형을 이루도록 제어된다. 목적하는 극성을 달성하기 위해 극성 용질을 기본 용매에 가할 수 있다. 텅스텐 필름에 대한 CMP 공정은 마모재, 산화제 및 물보다 극성이 작은 용질을 함유하는 수성 슬러리를 사용할 수 있다. 마모재는 콜로이드성 실리카일 수 있고 산화제는 과산화수소일 수 있으며 용질은 벤젠일 수 있다. The present invention relates to a chemical mechanical polishing (CMP) method using a chemically active slurry having a polarity selected to affect the relative oxidation rates of each of the crystal faces of the polycrystalline surface to be polished. Slurry polarity is controlled to balance the material removal rates from each of the crystal faces during the CMP process. Polar solutes may be added to the base solvent to achieve the desired polarity. The CMP process for tungsten films can use aqueous slurries containing abrasives, oxidants and solutes that are less polar than water. The wear material may be colloidal silica, the oxidant may be hydrogen peroxide and the solute may be benzene. 다결정성 재료, 화학 기계적 연마방법, 주요 캐리어 성분, 산화 성분, 극성 영향 성분 Polycrystalline Materials, Chemical Mechanical Polishing Methods, Main Carrier Components, Oxidation Components, Polar Influence Components

Semiconductor device manufacturing method and semiconductor device