Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 12. Отображено 12.
09-05-2023 дата публикации

Preparation method of electroluminescent device, electroluminescent device and display device

Номер: CN116096198A
Автор: AO ZITONG, ZHANG JIANXIN, YAN YIRAN, HONG JIATING, YANG FAN, MO XINDI
Принадлежит:

The invention discloses a preparation method of an electroluminescent device, the electroluminescent device and a display device, and the method comprises the steps: carrying out the secondary thermal annealing treatment of a functional layer of the electroluminescent device, thereby removing the internal stress of the functional layer, improving the problem that the functional layer is liable to crack, and improving the yield and photoelectric performance of the device.

Подробнее
Номер записи: 1
30-05-2023 дата публикации

Thin film treatment method

Номер: CN116193939A
Автор: MO XINDI, ZHANG JIANXIN, YAN YIRAN, AO ZITONG, YANG FAN, MA SONG
Принадлежит:

The embodiment of the invention discloses a thin film processing method, and relates to the technical field of display, and the method comprises the following steps: providing an electron transport film layer taking a metal oxide as an electron transport material; and carrying out annealing treatment on the electron transport film layer by using pulsed light in a first inert gas environment with the oxygen content of 25-40ppm. According to the thin film processing method provided by the invention, the annealing treatment of the electron transport layer is carried out by adopting the pulsed light in the inert gas environment with the specific oxygen content, so that the problem of unbalanced charge injection in the electron transport layer is solved.

Подробнее
Номер записи: 2
28-07-2023 дата публикации

Fault monitoring method and system for power grid distribution line

Номер: CN116505665A
Автор: FAN WEIXING, ZHANG LIJUAN, WANG HUA, ZHANG YOURAN, WANG LIANGYU, XU TING, YANG BOTING, WANG JIAYU, YAN YIRAN
Принадлежит:

The invention discloses a fault monitoring method and system for a power distribution line of a power grid, and relates to the field of power grid monitoring, and the method comprises the steps: carrying out the neighborhood network element node analysis of N network element nodes of a topological structure of a power distribution network, and generating N network element sets; outputting m accompanying risk indexes representing the fault decision error risk identifier; performing power distribution network data monitoring according to the power distribution network topological structure, and outputting a power distribution network monitoring data set; based on the m accompanying risk indexes, Bayesian decision making is carried out on the power distribution network monitoring data set, and a fault risk level based on abnormal network element nodes is output; and generating an early warning signal based on the abnormal network element node according to the fault risk level. The technical ...

Подробнее
Номер записи: 3
14-07-2023 дата публикации

Compound, light-emitting device, preparation method of light-emitting device and display device

Номер: CN116425711A
Автор: AO ZITONG, YAN YIRAN, HONG JIATING, YANG FAN, MO XINDI, MA SONG
Принадлежит:

The invention discloses a compound, a light-emitting device, a preparation method of the light-emitting device and a display device. The compound is obtained by coordination connection of coumarin and/or a coumarin derivative and a nano metal oxide. The preparation method of the light-emitting device comprises the step of preparing an electron transport layer, in the process of preparing the electron transport layer, firstly preparing an electron transport material layer, the material of which comprises the compound, and then processing the electron transport material layer by adopting a first illumination condition to obtain an electron transport precursor layer, the upper-layer functional film is prepared on one side of the electron transmission precursor layer, after the upper-layer functional film is prepared, the electron transmission precursor layer is processed under the second illumination condition to obtain the electron transmission layer, and the method has the advantages of ...

Подробнее
Номер записи: 4
02-05-2023 дата публикации

Compound, electroluminescent device, preparation method of electroluminescent device and display device

Номер: CN116041335A
Автор: AO ZITONG, ZHANG JIANXIN, YAN YIRAN, HONG JIATING, YANG FAN, MO XINDI
Принадлежит:

The invention discloses a compound, an electroluminescent device, a preparation method of the electroluminescent device and a display device, the compound comprises Ar, a coumarin group and a linking group B for linking the Ar and the coumarin group, and the Ar is selected from a structural unit comprising aryl and/or heteroaryl; the preparation method of the electroluminescent device comprises the step of preparing a hole transport layer, in the process of preparing the hole transport layer, a hole transport material layer is prepared firstly, the material of the hole transport material layer comprises the compound, then the hole transport material layer is processed under a first illumination condition to enable the hole transport material to form a cross-linked structure, and the hole transport material layer is processed under a second illumination condition to form a cross-linked structure. And preparing an upper-layer functional film on one side of the hole transport material layer ...

Подробнее
Номер записи: 5
28-04-2023 дата публикации

Light emitting device

Номер: CN116033785A
Автор: AO ZITONG, ZHANG JIANXIN, YAN YIRAN, YANG FAN, MO XINDI, HONG JIATING
Принадлежит:

The invention discloses a light emitting device. The light emitting device includes: a substrate; the light emitting diode is arranged on the substrate, and the light emitting diode comprises a first electrode layer, a first functional layer and a second electrode layer which are sequentially arranged on the substrate; the first heat dissipation layer is arranged on the substrate; the light-emitting device is provided with a light-emitting area and a non-light-emitting area; the light-emitting diode is correspondingly arranged in the light-emitting area, and the first heat dissipation layer is located in the non-light-emitting area. According to the light-emitting device, on the premise that the performance of the device is not affected, the accumulation rate of Joule heat can be greatly reduced, and the working life of the device during long-time current driving can be prolonged.

Подробнее
Номер записи: 6
26-05-2023 дата публикации

Electroluminescent device, preparation method thereof and photoelectric device

Номер: CN116171063A
Автор: AO ZITONG, YAN YIRAN, HONG JIATING, YANG FAN, MO XINDI, MA SONG
Принадлежит:

The invention discloses an electroluminescent device and a preparation method thereof, and a photoelectric device, the materials of at least two functional layers are doped with a photo-crosslinking agent, the two functional layers are arranged adjacently, on one hand, the photo-crosslinking agent can be combined with the materials of the functional layers through chemical bonds, and on the other hand, the photo-crosslinking agent can be combined with the materials of the functional layers through chemical bonds. In addition, a cross-linked structure can be formed between the photo-crosslinking agents, so that the adjacent functional layers are attached more firmly, the conditions of film layer cracking and overall film layer falling in the use process of the flexible device are avoided, and the problem that the device is prone to failure is solved.

Подробнее
Номер записи: 7
30-05-2023 дата публикации

Nanoparticle and composition, light-emitting diode and display device comprising same

Номер: CN116193952A
Автор: MA SONG, YAN YIRAN, AO ZITONG, YANG FAN, MO XINDI
Принадлежит:

The invention discloses a nanoparticle which comprises a quantum dot and a diphenylphosphine ligand connected to the surface of the quantum dot, Se is arranged on the surface of the quantum dot, the diphenylphosphine ligand and the Se are connected through a coordination bond, and in the nanoparticle, the mass ratio of the diphenylphosphine ligand to the quantum dot ranges from 0.08: 1 to 0.2: 1. Strong chemical bonding can be formed between the diphenylphosphine ligand in the nanoparticle and Se on the surface of the quantum dot to cover Se, so that non-radiative relaxation caused by exposed Se is avoided, the light stability of the nanoparticle is effectively improved, the efficiency of a light-emitting diode comprising the nanoparticle is effectively improved, and the service life of the light-emitting diode is effectively prolonged. In addition, the invention also discloses a composition comprising the nanoparticles, a light-emitting diode comprising the nanoparticles and a display ...

Подробнее
Номер записи: 8
18-08-2023 дата публикации

Preparation method of photoelectric device, photoelectric device and display device

Номер: CN116615050A
Автор: AO ZITONG, ZHANG JIANXIN, YAN YIRAN, HONG JIATING
Принадлежит:

The invention relates to a preparation method of a photoelectric device, the photoelectric device and a display device. The preparation method comprises the following steps: providing the photoelectric device with a top electrode layer; electromagnetic induction heating treatment is carried out on the top electrode layer to obtain the corresponding photoelectric device, the top electrode layer of the photoelectric device generally contains metal elements, at the moment, due to electromagnetic induction heating, high-frequency alternating current generally exists in electromagnetic induction heating, eddy current can be generated in metal, and therefore the photoelectric device is formed. And meanwhile, the top electrode layer usually has certain magnetic conductivity, and further generates heat due to the loss of a hysteresis phenomenon, so that the roughness of the top electrode layer is reduced through the heat generated in the process, and the resistance of the top electrode layer is ...

Подробнее
Номер записи: 9
11-07-2023 дата публикации

Photocatalytic material, preparation method, hydrogen production method and application

Номер: CN116408106A
Автор: MA SONG, YAN YIRAN, AO ZITONG, YANG FAN, MO XINDI
Принадлежит:

The invention discloses a photocatalytic material, a preparation method, a hydrogen production method and application. The photocatalytic material comprises a CdS nano material and an aniline long-chain polymer, and the aniline long-chain polymer is combined on the surface of the CdS nano material. An aniline long-chain polymer is added on the surface of a CdS nano material, and the aniline long-chain polymer is coordinated with an S vacancy in CdS or is physically adsorbed on a CdS photocatalyst through Van der Waals force to form a long-chain ligand. After absorbing visible light, CdS generates photo-induced electron-hole pairs, due to the fact that aniline long-chain polymers have excellent hole transmission capacity, holes are efficiently conducted through a long-chain structure to be separated from electrons, the probability of compounding of the photo-induced electron-hole pairs is reduced, H < + > in water can capture more electrons, and therefore the efficiency of hydrogen production ...

Подробнее
Номер записи: 10
02-06-2023 дата публикации

Photoelectric device processing method and photoelectric device

Номер: CN116209331A
Автор: AO ZITONG, ZHANG JIANXIN, YAN YIRAN, HONG JIATING, YANG FAN, MO XINDI
Принадлежит:

According to the photoelectric device processing method and the photoelectric device provided by the invention, residual organic matters and impurities on the surface of a film layer of the photoelectric device in the preparation process are removed by using liquid and/or solid carbon dioxide, and the organic matters can be taken away after the liquid and solid carbon dioxide volatilizes without extra impurity residues; and the film-forming property of the prepared film layer is improved, so that the performance of the device is improved.

Подробнее
Номер записи: 11
18-08-2023 дата публикации

Thin film, preparation method of photoelectric device, photoelectric device and display device

Номер: CN116615046A
Автор: AO ZITONG, ZHANG JIANXIN, YAN YIRAN, HONG JIATING
Принадлежит:

The invention discloses a thin film, a preparation method of a photoelectric device, the photoelectric device and a display device. The preparation method of the photoelectric device comprises the following steps: uniformly mixing a carboxyl-containing NPB precursor and an amino-containing cross-linking agent to obtain a mixed solution; a substrate is provided, a top electrode, a light-emitting layer and a bottom electrode which are sequentially arranged in a stacked mode from top to bottom are formed on the substrate, and a sealing film is prepared on the top electrode of the substrate through mixed liquid. A cross-linking reaction is carried out on a carboxyl-containing NPB precursor and an amino-containing cross-linking agent, an NPB thin film with a cross-linking structure is formed on a top electrode of a substrate, and the NPB thin film with the cross-linking structure has a body type molecular structure and is better in solvent resistance and water and oxygen resistance; according ...

Подробнее
Номер записи: 12