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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 10. Отображено 10.
28-07-2016 дата публикации

CHARGED PARTICLE BEAM DEVICE, CHARGED PARTICLE BEAM DEVICE OPTICAL ELEMENT, AND CHARGED PARTICLE BEAM DEVICE MEMBER PRODUCTION METHOD

Номер: WO2016117099A1
Автор: ICHIMURA Takashi, ITO Hiroyuki, KATO Shinichi, MURAKOSHI Hisaya, FUJIEDA Tadashi, MIYAKE Tatsuya
Принадлежит:

The objective of the invention is to provide a charged particle beam device, a charged particle beam device optical element, and a charged particle beam device member production method, whereby an improvement of performance of the charged particle beam device is achieved by forming the member with high precision. In order to achieve this objective, proposed is the charged particle beam device comprising an optical element for altering a charged particle beam emitted from a charged particle source, and a vacuum container containing the optical element, wherein the optical element contains an electrode or a voltage-applied member (102, 104) comprising a first glass containing vanadium, a second glass containing vanadium configuring at least one among the vacuum container and a support member (180) supporting the voltage-applied member (102, 104).

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Номер записи: 1
26-09-2013 дата публикации

SLIDE BEARING

Номер: WO2013140977A1
Автор: HIKITA Yasuhiro, KATO Shinichi, KIMURA Yuichiro, MURAKAMI Motoichi
Принадлежит:

A slide bearing (2) has a sliding surface (2a) that makes slidable contact with the external peripheral surface of a crank shaft (1) (rotating shaft), and an escape section (4) that recedes radially outward relative to the sliding surface (2a), the escape section (4) being formed in the circumferential direction at both axial end parts on the sliding surface (2a). The escape section (4) is provided with a flat section (4a) formed at an axial end part, and a tapered section (4b) formed so as to gradually descend from the flat section (4a) toward a boundary portion between the escape section (4) and the sliding surface (2a). After forming an eddy or becomes turbulent inside the tapered section (4b), a lubricant circulates along the tapered section (4b), whereby a high pressure region (W) produced by the flow of the lubricant is formed in the position of the flat section (4a). The temperature of the lubricant can be rapidly increased and leakage of the lubricant can be minimized.

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Номер записи: 2
03-05-2018 дата публикации

PEPTIDE INDUCING EGG RELEASE OR SPERM RELEASE

Номер: WO2018079861A1
Автор: YOSHIKUNI Michiyasu, KATO Shinichi, YAMANO Keisuke, FUJIWARA Atsushi
Принадлежит:

A heterodimer peptide exhibiting activity for inducing egg release or sperm release in an invertebrate belonging to Holothuroidea, and including: a peptide that includes an amino acid sequence represented by formula I, CCXXXCXXXXXXXXC (where, X is any amino acid residue other than a cysteine residue); and a peptide that includes an amino acid sequence represented by formula II, CXXXXXXXXXXXC (where, X is the same as above).

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Номер записи: 3
01-02-2018 дата публикации

HEAT TREATMENT METHOD AND HEAT TREATMENT DEVICE

Номер: WO2018020742A1
Автор: AOYAMA Takayuki, KATO Shinichi, FUSE Kazuhiko, KAWARAZAKI Hikaru, FURUKAWA Masashi, TANIMURA Hideaki, UEDA Akitsugu
Принадлежит:

In the present invention, a semiconductor wafer to be treated is heated to a first preliminary heating temperature between 100°C and 200°C with the interior of a chamber storing the semiconductor wafer in a state of reduced pressure that is lower than atmospheric pressure. Next, with the interior of the chamber restored to a pressure higher than when the pressure was reduced, preliminary heating is performed to raise the temperature of the semiconductor wafer to a second preliminary heating temperature between 500°C and 700°C, and then the surface of the semiconductor wafer is irradiated with flash light from a flash lamp. By heating the semiconductor wafer to the relatively low first preliminary heating temperature, very small amounts of moisture and such that had been adsorbed by the surface of the semiconductor wafer can be desorbed from said surface, and flash heat treatment can be performed in a state where oxygen originating from such adsorbed moisture and such has been eliminated ...

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Номер записи: 4
03-10-2013 дата публикации

SLIDING MEMBER AND METHOD FOR MANUFACTURING SLIDING MEMBER

Номер: WO2013146608A1
Автор: KODAMA Hayato, MATSUMOTO Shinji, KATO Shinichi, TOMIKAWA Takashi, HAYAKAWA Hiroaki, NAKANE Takanori
Принадлежит:

By means of a method for manufacturing a bearing (40) which is a sliding member according to one embodiment of the present invention, a bimetal sintered alloy (10) is formed by forming a sintered layer (11) by sintering a metal powder on the surface of a back plate (15), which is a plate-shaped metal member. Next, the sintered alloy (10) is formed into a cylindrical bushing (20), and the bushing (20) undergoes heat treatment. Next, the bushing (20) is press-fitted into a collar (30), which is a cylindrical metal member, to form the bearing (40).

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Номер записи: 5
05-03-2020 дата публикации

HEAT TREATMENT METHOD

Номер: WO2020044775A1
Автор: TANIMURA Hideaki, YAMADA Takahiro, KATO Shinichi
Принадлежит:

According to the present invention, a recessed portion is formed in the central section of the upper surface of a mounting plate formed of silicon carbide. A GaN substrate formed of gallium nitride is placed on the recessed portion of the mounting plate. When the GaN substrate is pre-heated by light emission from a halogen lamp, light emitted from the halogen lamp is absorbed in the mounting plate. The GaN substrate is indirectly pre-heated by heat conduction from the heated mounting plate. The GaN substrate heated by pre-heating can absorb flash light emitted from a flash lamp. Accordingly, the GaN substrate can be heated by flash light emission.

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Номер записи: 6
09-08-2018 дата публикации

SLIDE BEARING

Номер: WO2018143091A1
Автор: YAMAGUCHI, Sosuke, KATO, Shinichi
Принадлежит:

This slide bearing, which is formed into a cylindrical shape and which has an inner peripheral surface that slides over a shaft, has, in the inner peripheral surface, first grooves (20A, 20B) of which the extension direction has a circumferential direction component, and at least two second grooves (21A, 21B, 21C, 21D) which branch from the first grooves and of which the extension direction has an axial direction component at least within a range predetermined from the first grooves. A predetermined range of the second grooves, which begins at the distal ends on the sides opposite the first-groove sides, gradually decreases in width or depth toward the distal ends.

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Номер записи: 7
23-01-2014 дата публикации

METHOD FOR TREATING SUBSTRATE

Номер: WO2014013809A1
Автор: KATO Shinichi
Принадлежит:

According to this method, a silicon substrate which has a natural oxide film on the surface is heated in a hydrogen atmosphere, whereby both the reduction of silicon dioxide with hydrogen and the hydrogen termination of the silicon present in the neighborhood of the interface with the natural oxide film are conducted. Thus, a hydrogen-containing layer such that the hydrogen is bonded to silicon is formed in the substrate surface. A dopant fluid is fed onto the substrate surface in which the hydrogen-containing layer has been formed, whereby the hydrogen in the hydrogen-containing layer is replaced by the dopant. Thus, the dopant is introduced into the substrate surface. Since the hydrogen-containing layer formed by reducing the natural oxide film is relatively thick, the dopant can be uniformly introduced to a necessary depth of the substrate from the surface thereof. The substrate surface into which the dopant has been introduced is irradiated with a flash of light, whereby the dopant ...

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Номер записи: 8
28-07-2016 дата публикации

CHARGED PARTICLE BEAM DEVICE, AND METHOD OF MANUFACTURING COMPONENT FOR CHARGED PARTICLE BEAM DEVICE

Номер: WO2016117628A1
Автор: ICHIMURA Takashi, ITO Hiroyuki, KATO Shinichi, MURAKOSHI Hisaya, FUJIEDA Tadashi, MIYAKE Tatsuya, NAITOU Takashi, AOYAGI Takuya, TANIMOTO Kenji
Принадлежит:

The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers (161, 162, 163) formed on the surface on the interior space-side of the metal container, wherein the coating layers (161, 162, 163) are vanadium-containing glass, which is to say an amorphous substance. Coating vanadium glass onto walls of a space where it is desirable to form a high vacuum, for example walls in the vicinity of an electron source, reduces gas discharge in the vicinity of the electron source, and the getter effect of the coating layer induces localized evacuation and enables the formation of an extremely high vacuum, even in ...

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Номер записи: 9
02-01-2020 дата публикации

CHARGED PARTICLE BEAM GENERATION DEVICE AND CHARGED PARTICLE BEAM DEVICE

Номер: WO2020003428A1
Автор: MORITA Hiroshi, KATO Shinichi, ITO Hiroyuki
Принадлежит:

Provided are a charged particle beam generation device and a charged particle beam device that can improve insulation reliability as a result of reducing the high electric field generated around a connection section for a conductor. The charged particle beam generation device 100 has: a plug 151 that guides high voltage from outside to a charged particle source that is in a vacuum; and a socket 251 having the charged particle source attached thereto. An electric field reduction ring 161 that electrically connects to one of a plurality of conductors that guide high voltage is embedded inside the tip of the plug 151. The plurality of conductors that guide the high voltage are arranged so as to penetrate the electric field reduction ring 161.

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Номер записи: 10