16-05-2023 дата публикации
Номер: CN116133376A
Принадлежит:
The invention provides a preparation method of a columnar capacitor array structure and a semiconductor structure, and the preparation method comprises the steps: adjusting the thickness of a mask layer in a peripheral region and the thickness of a mask layer in an array region to be the same through the filling of a photoresist layer before the mask layer is removed; therefore, the loss of the top supporting layer caused by the influence on the thickness of the top supporting layer due to different thicknesses of the mask layer is avoided. Besides, a third sacrificial layer and an auxiliary layer are further formed in the preparation method, so that double protection is performed on the top supporting layer, the top supporting layer is prevented from being thinned in the subsequent technological process, the supporting strength of the top supporting layer is increased, and the yield of the semiconductor device is improved. Therefore, the condition that the columnar capacitor is inclined ...
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