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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 25. Отображено 25.
04-04-2023 дата публикации

Hydrophobic photochromic cotton knitted fabric and preparation method thereof

Номер: CN115897250A
Автор: MENG JIAGUANG, ZHANG LAN, SUN ZHAOLING, XUE TAO, ZHI CHAO, CHENG YANTING, SONG QINGWEN, SONG YAO, WANG YONGZHEN, LIU YAMING, LIN YINGLEI
Принадлежит:

The invention discloses a hydrophobic photochromic cotton knitted fabric and a preparation method thereof, and belongs to the technical field of textile dyeing and finishing processes. The preparation method disclosed by the invention comprises the following processes: firstly, pretreating the cotton knitted fabric, then finishing the three-color photochromic microcapsule powder on the fabric by utilizing a padding method to prepare the photochromic cotton knitted fabric, and finally preparing the hydrophobic photochromic cotton knitted fabric by utilizing a hydrophobic finishing agent through a dipping method. The hydrophobic photochromic cotton knitted fabric prepared by the preparation method provided by the invention shows good photoresponsiveness and reversibility, has high sensitivity, excellent fatigue resistance and good hydrophobic performance after being irradiated by ultraviolet rays, and provides a theoretical basis for intelligent/multifunctional fabrics.

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Номер записи: 1
18-04-2023 дата публикации

V-shaped non-uniform ignition engine

Номер: CN115977799A
Автор: CHEN MING, LI JINCHENG, HAN LINGHAI, GUO CHAO, WU NAIPENG, ZHANG QIANG, ZHAO CHUAN, XIA CHUNYU, ZHOU CHAOYU, SONG QINGWEN
Принадлежит:

The invention belongs to the technical field of engines, and discloses a V-shaped non-uniform ignition engine which comprises a left column of air cylinders, a right column of air cylinders and a crankshaft, the V angle between the center line of the left column of air cylinders and the center line of the right column of air cylinders is alpha which is equal to 90 degrees, a plurality of crank pins are arranged on the crankshaft, and the crank pins are connected with the left column of air cylinders and the right column of air cylinders. The staggered corner between the connecting lines from the axis projection points of every two adjacent crank pins to the center line projection point of the main journal of the crankshaft is theta, the sum of the staggered corner and the V angle is smaller than the conventional ignition advance angle by 120 degrees, and by optimizing the design of the staggered corner of the crankshaft, the strength of the crankshaft is improved under the condition that ...

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Номер записи: 2
27-06-2023 дата публикации

Semiconductor device for improving anti-surge capability of SiC MOSFET

Номер: CN116344619A
Автор: HE YANJING, PEI BINGJIE, LAI JIANKUN, YUAN HAO, SONG QINGWEN, TANG XIAOYAN, GONG XIAOWU, ZHANG YUMING
Принадлежит:

The invention discloses a semiconductor device for improving the anti-surge capability of a SiC MOSFET, and relates to the field of silicon carbide power semiconductors, and the semiconductor device comprises a first cellular region which comprises a plurality of transistors arranged in an array, and each transistor comprises a body diode; the first diode region at least partially surrounds the first cellular region, and the first diode region comprises a plurality of diodes; wherein each diode comprises a first sub-diode and a second sub-diode which are arranged in parallel; the second cellular region at least partially surrounds the first diode region, and the second cellular region comprises a plurality of transistors arranged in an array; and a second diode region at least partially surrounding the second cellular region, the second diode comprising a plurality of diodes. The diodes in the first diode region and the second diode region can reduce the conduction voltage drop of the transistors ...

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Номер записи: 3
09-01-2020 дата публикации

VDMOSFET DEVICE HAVING U-TYPE SOURCE GROOVE AND INTEGRATING SCHOTTKY DIODE

Номер: WO2020006848A1
Автор: TANG, Xiaoyan, CHEN, Hui, ZHANG, Yuming, SONG, Qingwen, ZHANG, Yimeng
Принадлежит:

The present invention relates to the field of integrated circuits and disclosed thereby is a VDMOSFET device that has a U-type source groove and that integrates a Schottky diode, comprising a substrate (8); a drain electrode (9) that is disposed below the substrate (8); an N- drift region (7) that is disposed above the substrate (8); a source electrode (4) that is disposed above the N- drift region (7); an N+ source region (5) that is disposed in the N- drift region (7) at two sides of the source electrode (4); a P-type base region (6) that is disposed at the interior of the N- drift region (7); a gate source isolation layer (3) that is disposed above the N+ source region (5); a gate medium (2) and a gate electrode (10); the interface between the source electrode (4) and the N- drift region (7) is a Schottky contact. The device may improve the reliability of device performance and reduce the complexity and costs of design.

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Номер записи: 4
20-02-2014 дата публикации

PROCESS FOR PRODUCING BRA WITH REMOTE INFRARED, ANTI-BACTERIAL AND ANTI-MITE FUNCTIONS

Номер: WO2014026339A1
Автор: MENG, Jiaguang, WENG, Chuangjie, WENG, Hongguo, HUANG, Yanpei, SONG, Qingwen, FENG, Xiaoting
Принадлежит:

Disclosed is a process for producing a bra with remote infrared, anti-bacterial and anti-mite functions, comprising: a weaving process, a scouring and bleaching process, a colouring process, a water scrubbing process, a soft finishing process, a dehydrating process, a baking process, a shaping process and a cutting out and sewing up process for a material, wherein the yarn used for the material is a mixed spun yarn of remote infrared, anti-bacterial and anti-mite fibre with a fineness of 14.7 tex and cotton. The bra is comfortable to wear, and has functions such as healthcare, thermal insulation and environmental protection.

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Номер записи: 5
07-07-2023 дата публикации

Silicon carbide power device introduced into sheet-shaped P channel in cooperation with floating junction

Номер: CN116404034A
Автор: YUAN HAO, LI JINGYU, ZHAO HAOYUE, SONG QINGWEN, TANG XIAOYAN, ZHANG YUMING, HE XIAONING
Принадлежит:

The invention discloses a silicon carbide power device introduced into a sheet-shaped P channel in cooperation with a floating junction. The silicon carbide power device comprises an N-type silicon carbide substrate, an N-epitaxial layer superposed on the N-type silicon carbide substrate, and a P-type doped region formed by performing P-type doping on the surface of the N-epitaxial layer, wherein the N-epitaxial layer below the P-type doped region forms an active drift region of the silicon carbide power device; a plurality of floating junctions are arranged in the active drift region, and each floating junction is connected with a P-type doped region above the active drift region through a sheet-shaped P channel; the floating junction and the sheet-shaped P channel are both formed by performing multiple times of ion implantation on the growing N-epitaxial layer in the process of epitaxial growth of the N-epitaxial layer. The switching characteristic of the silicon carbide floating junction ...

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Номер записи: 6
05-05-2023 дата публикации

Three-color photochromic microcapsule and preparation method thereof

Номер: CN116064028A
Автор: MENG JIAGUANG, ZHANG LAN, SUN ZHAOLING, XUE TAO, ZHI CHAO, CHENG YANTING, SONG QINGWEN, SONG YAO, WANG YONGZHEN, LIU YAMING, LIN YINGLEI
Принадлежит:

The invention discloses a three-color photochromic microcapsule and a preparation method thereof, the microcapsule takes an organic photochromic material as a core material, a high polymer material such as polyurethane as a wall material and polyethylene glycol as a monomer of the wall material, the three materials are mixed to serve as an oil phase, the oil phase and a water phase are homogenized and emulsified to prepare an emulsion, a catalyst and a solvent are added into the emulsion, and the three materials are mixed to prepare the three-color photochromic microcapsule. And heating, adding a chain extender, reacting, centrifuging, cleaning, drying and grinding to obtain the three-color photochromic microcapsule disclosed by the invention. The three-color photochromic microcapsule prepared by the invention not only has sensitive light responsiveness and light reversibility, but also has certain light fatigue resistance, small average particle size, uniform distribution and excellent ...

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Номер записи: 7
05-05-2023 дата публикации

VDMOSFET device based on cross-shaped cellular layout

Номер: CN116072731A
Автор: HAN CHAO, GU XIAOJIE, TANG XIAOYAN, WANG DONG, WU YONG, SONG QINGWEN, TAO LI, CHEN XING, HUANG YONG
Принадлежит:

The invention discloses a VDMOSFET device based on a cross-shaped cellular layout. The VDMOSFET device comprises an N + substrate; the N-epitaxial layer drift region is positioned above the N + substrate; the P wells are embedded in two sides of the upper surface of the drift region of the N-epitaxial layer; the N + source region is embedded in the upper surface of the corresponding P well; the SiO2 gate oxide layer is located above the N-epitaxial layer drift region and covers part of the P well and the N + source region; the polysilicon gate is located above the SiO2 gate oxide layer and comprises a plurality of unit cells which are regularly arranged, and each unit cell is provided with a cross-shaped window penetrating through the upper surface and the lower surface; the interlayer dielectric layer is located outside the polysilicon gate and wraps the polysilicon gate; the source electrode is located above the P well, the N + source region and the interlayer dielectric layer; the source ...

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Номер записи: 8
18-07-2023 дата публикации

Columnar P-channel silicon carbide floating junction diode and preparation method thereof

Номер: CN116454138A
Автор: SONG QINGWEN, LI JINGYU, YUAN HAO, TANG XIAOYAN, ZHANG YUMING, WANG CHENYU, HE XIAONING
Принадлежит:

The invention relates to a columnar P-channel silicon carbide floating junction diode and a preparation method, the silicon carbide floating junction diode is of a cylindrical structure and comprises an N-type substrate, an active region N drift region, a terminal region, a plurality of P-type floating junctions, a P-type channel region and a plurality of P-type heavily doped regions, and the active region N drift region is located on the N-type substrate; the terminal region is formed in the active region N drift region and surrounds the plurality of P-type floating junctions and the plurality of P-type heavily doped regions; the plurality of P-type floating junctions are distributed in the N drift region of the active region and have the same depth; the P-type channel region is connected with a plurality of P-type floating junctions and extends to the surface of the active region N drift region from the interior of the active region N drift region; and the plurality of P-type heavily ...

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Номер записи: 9
28-07-2023 дата публикации

Super junction diode with transverse structure and preparation method thereof

Номер: CN116504816A
Автор: SONG QINGWEN, LIANG SHUXUAN, LI JINGYU, YUAN HAO, TANG XIAOYAN, ZHANG YUMING, HE XIAONING
Принадлежит:

The invention relates to a super junction diode with a transverse structure and a preparation method. The diode comprises an N + type substrate, an N type epitaxial layer, a Gaussian doped N region, at least two active region N columns, at least one active region P column, an N + region, an anode and a cathode, the N-type epitaxial layer is located on the surface of the N +-type substrate; the Gaussian doped N region is located in the surface layer of the N-type epitaxial layer; the at least two active region N columns and the at least one active region P column are alternately stacked on the surface of the N-type epitaxial layer, the active region N columns cover a part of the surface of the Gaussian doped N region, and the at least two active region N columns and the at least one active region P column form a super junction structure; the N + region is located on the surface of the N-type epitaxial layer, the side face of the N + region makes contact with the side face of the super junction ...

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Номер записи: 10
04-07-2023 дата публикации

SiC UMOSFET device integrated with HJD and preparation method thereof

Номер: CN116387362A
Автор: HE YANJING, FU HAOYU, YUAN HAO, SONG QINGWEN, TANG XIAOYAN, GONG XIAOWU, ZHANG YUMING
Принадлежит:

The invention relates to a SiC UMOSFET device integrated with an HJD and a preparation method of the SiC UMOSFET device. The SiC UMOSFET device comprises a metalized drain electrode, an N + substrate region, an N-epitaxial region, an N-csl region, a P-base region, a P + buried layer, two P + injection regions, an N + injection region, a P + PolySi region, a gate dielectric layer, an N-PolySi gate electrode and a metalized source electrode. Wherein the depth of the N-PolySi grid electrode is larger than the depth of the P-base region, the P + buried layer and the second P + injection region and is larger than the depth of the groove. Contact interfaces between the source electrode and the first P + injection region and between the source electrode and the N + injection region are in ohmic contact, and an interface between the P + PolySi region and the N-epitaxial region is in heterojunction contact. The heterojunction diode structure is integrated in the device, the utilization rate of the ...

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Номер записи: 11
30-06-2023 дата публикации

SiC VDMOSFET device integrated with HJD and preparation method thereof

Номер: CN116364778A
Автор: HE YANJING, FU HAOYU, YUAN HAO, SONG QINGWEN, TANG XIAOYAN, GONG XIAOWU, ZHANG YUMING
Принадлежит:

The invention relates to an HJD-integrated SiC VDMOSFET device and a preparation method thereof. The HJD-integrated SiC VDMOSFET device comprises a metalized drain, an N + substrate layer, an N-epitaxial layer, a P-base region, a P + injection region, an N + injection region, an N-doped region, a P + polycrystalline silicon region, a gate dielectric layer, an N + polycrystalline silicon gate and a metalized source. Wherein the depths of the P-base region, the P + injection region and the N-doped region are the same, the contact interface between the source electrode and the P + injection region, the contact interface between the N + injection region and the P + polycrystalline silicon region are ohmic contact, and the interface between the P + polycrystalline silicon region and the N-doped region is heterojunction contact. The heterojunction diode structure is integrated in the device, the utilization rate of the cellular area is improved, the gate capacitance is reduced while the turn-on ...

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Номер записи: 12
18-08-2023 дата публикации

Vehicle seat control method, device and equipment and medium

Номер: CN116605104A
Автор: WANG SHUANGLONG, YANG JIAN, WANG YANLONG, YAN TAO, SONG QINGWEN, SUN HUAN, WEI HONGLIANG, GENG ZHEN, WAN JILU, PEI DONGMING
Принадлежит:

The invention discloses a vehicle seat control method, device and equipment and a medium. The method comprises the steps that a vehicle seat control mode of a vehicle is determined; if the vehicle seat control mode is a driver state control mode, state data of a driver are obtained regularly, whether the driver is in an abnormal state or not is determined according to the state data, and a vehicle seat of the driver is controlled to execute corresponding abnormal processing operation; and if the vehicle seat control mode of the vehicle is the vehicle state control mode, driving state data of the vehicle are obtained regularly, whether the vehicle is in an abnormal driving state or not is determined according to the driving state data, and a vehicle seat of a driver is controlled to execute corresponding protection operation. According to the embodiment of the invention, whether the driver or the vehicle is abnormal or not can be automatically determined according to the data related to ...

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Номер записи: 13
11-08-2023 дата публикации

SiC UMOSFET with discontinuous P + shielding layer and preparation method thereof

Номер: CN116581161A
Автор: SONG QINGWEN, WANG CHENYU, LI JINGYU, YUAN HAO, TANG XIAOYAN, ZHANG YUMING, HE XIAONING, XIAO YUJIA
Принадлежит:

The invention relates to a SiC UMOSFET with a discontinuous P + shielding layer and a preparation method of the SiC UMOSFET. The UMOSFET comprises a substrate layer; the N-type drift layer is located on the upper surface of the substrate layer; the P-doped region is located in the surface layer of the N-type drift layer; the N + doped region is located in the surface layer of the P-doped region; the polygonal annular groove is located on the periphery of the N + doped region, and the depth of the polygonal annular groove is larger than the sum of the thicknesses of the N + doped region and the P-doped region; the plurality of shielding layers are respectively positioned at each corner of the polygonal annular groove; and the P + column is positioned in the middle of the N + doped region, penetrates through the N + doped region and the P-doped region, and extends into the N-type drift layer. The invention also provides a preparation method of the SiC UMOSFET with the discontinuous P + shielding ...

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Номер записи: 14
25-07-2023 дата публикации

Vehicle power output state detection method and storage medium

Номер: CN116476856A
Автор: WU TONG, YAN TAO, DIAO XU, XU NINGNING, SONG QINGWEN, HAO WEI, ZHANG WENTAO, DONG LIDONG, LIU ZEHUA, YANG HANG
Принадлежит:

The invention discloses a vehicle power output state detection method and a storage medium. The method is applied to the field of vehicle data processing and comprises the following steps: acquiring motion state parameters of a vehicle and working state parameters of a power device of the vehicle; determining a first output torque of the vehicle through a vehicle dynamics calculation method based on the motion state parameters; determining a second output torque of the vehicle based on the working state parameter; and the power output state of the vehicle is detected based on the first output torque and the second output torque, and a detection result is obtained. According to the invention, the technical problem of low detection accuracy of the power output state of the vehicle in the prior art is solved.

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Номер записи: 15
23-05-2023 дата публикации

Circuit for hysteresis current control to generate hysteresis window changing along with input and output

Номер: CN116156699A
Автор: ZHANG YIMENG, CHEN ZEHUA, ZHANG YUMING, TANG XIAOYAN, SONG QINGWEN, SUN LEJIA
Принадлежит:

The invention provides a circuit for generating a hysteresis window changing along with input and output under the control of hysteresis current, which comprises an input and output signal processing circuit and a hysteresis window generating circuit and is used for stabilizing the switching frequency of an LED (Light Emitting Diode) driver. The hysteresis window circuit generates a hysteresis window in a function relationship with input and output when the input and output voltage changes, so that the switching frequency is fixed, and the cost of EMI design is reduced. According to the invention, the frequency can be set at the required frequency to solve the crosstalk with other modules, the method can be widely applied to the LED drive controlled by the hysteresis current, the reliability of the driver is improved, and the method has wide application scenarios. In addition, the common-gate input operational amplifier is utilized, so that the sampling input voltage range is 7V-40V, the ...

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Номер записи: 16
23-06-2023 дата публикации

Single-particle-resistant SiC UMOSFET device

Номер: CN116314326A
Автор: TANG XIAOYAN, ZHANG NAN, SONG QINGWEN, YUAN HAO, TAO JINGWEN, ZHANG YUMING
Принадлежит:

The invention relates to an anti-single-particle SiC UMOSFET device, and the device comprises a substrate; the drain electrode is arranged below the substrate; the N-drift region is located above the substrate; the first P + region is located in the N-drift region; the second P + region is located in the N-drift region; the P-type base region is arranged in the N-drift region and located between the first P + region and the second P + region. The N + source region is positioned on the upper surfaces of the first P + region, the P-type base region and the second P + region; the gate groove penetrates through the N + source region and is adjacent to the P-type base region; the gate is located in the gate groove, and a gate medium is filled between the gate and the gate groove; the source electrode is arranged on the surface of the first source groove, the surface of the second source groove, two side surfaces of the N + source region and part of the upper surface of the N + source region; ...

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Номер записи: 17
07-04-2023 дата публикации

Emergency separation system and method for battery pack of electric vehicle, equipment and storage medium

Номер: CN115923521A
Автор: YANG JIAN, SONG QINGWEN, WANG SHUANGLONG, MI ZHUANG, YAN TAO, GUO YINGJUN, HAN YUNFENG, HE HONGWEI, ZHANG YANG, SHAO FUMING
Принадлежит:

The invention discloses an electric vehicle battery pack emergency separation system and method, equipment and a storage medium, belongs to the technical field of electric vehicle battery packs, and solves the problem that an existing technical scheme is lack of an electric vehicle battery pack emergency separation system. The system comprises a vehicle-mounted safety module, an intelligent driving module, a safety module and a separation module, the vehicle-mounted safety module monitors the conditions of the safety module and the battery pack in real time, and when the battery pack burns, the vehicle-mounted safety module sends a command to the intelligent driving module, and meanwhile, the vehicle-mounted safety module sends away warning information to surrounding vehicles and personnel; when the battery pack burns, the intelligent driving module controls the electric vehicle to run to a parking area; the safety module unlocks the separation module when the battery pack burns; the separation ...

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Номер записи: 18
15-08-2023 дата публикации

Intercooler pipeline leakage determination method and device, equipment and storage medium

Номер: CN116593092A
Автор: WEI HONGLIANG, ZHANG JIE, SONG QINGWEN, ZHANG CHENG, TAO DAN, SU BO, YU LEI, WANG SHUANGLONG, BAE DONG-MYUNG, NING YUSHEN
Принадлежит:

The embodiment of the invention provides an intercooler pipeline leakage determination method and device, equipment and a storage medium. The method comprises the following steps: acquiring a gas pressure value at an outlet and/or an inlet of an intercooler pipeline; an outlet humidity value of an outlet of the intercooler pipeline is obtained; and leakage information of the intercooler pipeline is determined according to the gas pressure value and/or the humidity value. According to the mode of determining the leakage information of the intercooler pipeline according to the gas pressure value and/or the humidity value, whether the intercooler pipeline leaks or not can be detected, and the accuracy of leakage detection of the intercooler pipeline can also be improved.

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Номер записи: 19
04-04-2023 дата публикации

Air inlet system of engine, control method and control device

Номер: CN115898723A
Автор: XU NINGNING, WU TONG, SONG QINGWEN, LIU ZEHUA, YANG HANG, ZHANG LIANG, DIAO XU, DONG LIDONG, YAN TAO
Принадлежит:

The embodiment of the invention provides an air inlet system of an engine, a control method, a control device, a storage medium and electronic equipment, the air inlet system comprises a main air inlet pipeline and a control unit, the main air inlet pipeline is connected with a plurality of air inlet branches connected in parallel, each air inlet branch is connected with at least one air cylinder in the engine, and the control unit is connected with the main air inlet pipeline. Each air inlet branch is provided with an air inlet intercooler, a communicating pipeline is arranged between the two air inlet branches, the communicating pipeline is provided with a valve for controlling connection and disconnection of the communicating pipeline, and the valve is connected with the control unit. According to the embodiment of the invention, the air inlet branches corresponding to the cylinders on the two sides can be selectively communicated or separated when the engine operates under different ...

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Номер записи: 20
25-07-2023 дата публикации

Silicon carbide power device using N-region to surround P + gradient ring and preparation method thereof

Номер: CN116487445A
Автор: YUAN HAO, XU LEILEI, ZHAO HAOYUE, SONG QINGWEN, TANG XIAOYAN, ZHANG YUMING, HE XIAONING
Принадлежит:

The invention discloses a silicon carbide power device with a P + gradient ring surrounded by an N-region. The silicon carbide power device comprises an ohmic contact cathode, an N + substrate layer, an N-type epitaxial region, the N-region, a terminal region oxide layer and a Schottky contact anode which are sequentially arranged from bottom to top, wherein the terminal region oxide layer and the Schottky contact anode are located on the N-region; a plurality of active region P + doped regions and a plurality of terminal region P + doped regions are arranged in the N-region; the doping ion concentration of the active region P + doping region and the doping ion concentration of the terminal region P + doping region are in Gaussian distribution. The doping concentration of the N-region is smaller than the doping concentration of the N-type epitaxial region. The invention also provides a preparation method of the silicon carbide power device using the N-region to surround the P + gradient ...

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Номер записи: 21
01-08-2023 дата публикации

Avalanche SiC-TVS device with Mesa groove terminal coupled with U-shaped planar junction

Номер: CN116525686A
Автор: HAN CHAO, YUAN GUANGAN, TANG XIAOYAN, SONG QINGWEN, WANG DONG, WU YONG, TAO LI, HUANG YU
Принадлежит:

The invention discloses an avalanche SiC-TVS device with a Mesa trench terminal coupled with a U-shaped planar junction, the avalanche SiC-TVS device comprises a SiC substrate, a SiC epitaxial layer, a negative electrode and a positive electrode, two sides of the SiC substrate are in a symmetrical step shape, the SiC substrate comprises a first upper surface, a second upper surface and a Mesa side edge located between the first upper surface and the second upper surface, the SiC epitaxial layer is located on the second upper surface, the negative electrode is located on the first upper surface, and the positive electrode is located on the second upper surface. The two sides of the SiC epitaxial layer are located on side wall extension lines between the first upper surface and the second upper surface 102 respectively, the SiC epitaxial layer comprises an N-region, a U-shaped plane PN junction and a P + region, the P + region is formed in the upper surface of the SiC epitaxial layer in an ...

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Номер записи: 22
15-08-2023 дата публикации

High-speed rail-to-rail self-bias voltage follower

Номер: CN116594459A
Автор: ZHANG YIMENG, CHU ZIYUAN, ZHANG YUMING, SUN LEJIA, TANG XIAOYAN, SONG QINGWEN
Принадлежит:

The invention relates to a high-speed rail-to-rail self-bias voltage follower which comprises a PMOS (P-channel Metal Oxide Semiconductor) input circuit, an NMOS (N-channel Metal Oxide Semiconductor) input circuit and a voltage clamping and mutual bias circuit. The high-speed rail-to-rail self-bias voltage follower can accurately track the change of the input voltage at a high speed to generate a rail-to-rail output signal, adopts a self-bias design to provide a bias voltage for an input circuit, does not need to additionally input the bias voltage, and reduces the complexity of voltage design. The voltage following circuit can be widely applied to a single-inductor bipolar output or isolated gate drive circuit with positive and negative voltages or a voltage track changing rapidly, and provides stable and accurate voltage following for the circuit.

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Номер записи: 23
02-05-2023 дата публикации

Bootstrap voltage recovery circuit based on PSM mode under typical BUCK

Номер: CN116054537A
Автор: ZHANG YIMENG, CHEN YANG, ZHANG YUMING, TANG XIAOYAN, SONG QINGWEN, SUN LEJIA
Принадлежит:

The invention provides a bootstrap voltage recovery circuit based on a PSM mode under typical BUCK. The bootstrap voltage recovery circuit comprises a BUCK circuit, the high-low end driving circuit is used for driving the high-low end power tube; the bootstrap circuit is used for raising the voltage of a high potential VBOOT; the voltage division feedback circuit is used for feeding back to the bootstrap voltage recovery circuit under the condition that the current of the output voltage changes so as to be used as a signal for starting the current source by the bootstrap voltage recovery circuit, and controlling the output voltage of the voltage division feedback circuit to change along with the change of the output voltage; and the bootstrap voltage recovery circuit uses VFB and VBOOT signals as trigger signals for turning on and turning off the current source. The 5V voltage difference with the VBOOT higher than the VSW is provided for normal work in a PSM mode by utilizing the principle ...

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Номер записи: 24
18-08-2023 дата публикации

Silicon carbide floating junction JBS design method based on charge balance

Номер: CN116611384A
Автор: SONG QINGWEN, LI JINGYU, YUAN HAO, TANG XIAOYAN, ZHANG YUMING, XU LEILEI
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The invention discloses a silicon carbide floating junction JBS design method based on charge balance, and the method comprises the steps: obtaining six electric field distribution types of a to-be-designed silicon carbide floating junction JBS according to a charge balance theory, the six electric field distribution types are respectively non-depletion non-punch-through type electric field distribution, non-depletion punch-through type electric field distribution, surface breakdown non-punch-through type electric field distribution, surface breakdown punch-through type electric field distribution, internal breakdown non-punch-through type electric field distribution and internal breakdown punch-through type electric field distribution; establishing reverse blocking analysis models corresponding to different electric field distribution types by using the six electric field distribution types; and obtaining the optimal device parameters of the silicon carbide floating junction JBS, which ...

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Номер записи: 25