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Применить Всего найдено 4. Отображено 4.
18-04-2023 дата публикации

Infrared detector based on PbS CQDs/ZnO-NWs composite structure and preparation method thereof

Номер: CN115985984A
Автор: TANG LIBIN, ZHONG HEFU, TIAN PIN, YU LIJING, ZUO WENBIN, JI RONGBIN
Принадлежит:

The invention discloses an infrared detector based on a PbS CQDs/ZnO-NWs composite structure and a preparation method of the infrared detector, and belongs to the field of preparation of infrared detectors. The infrared detector with the composite structure sequentially comprises a substrate, an anode layer, a PbS CQDs/ZnO-NWs composite layer and a cathode layer from bottom to top. The preparation method comprises the steps of cleaning the substrate, growing the ZnO-NWs array by a hydrothermal method, preparing the PbS CQDs layer by a spin-coating method, and carrying out thermal evaporation on the Al cathode layer. The device disclosed by the invention shows good sensitivity to infrared light and is excellent in performance.

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Номер записи: 1
11-08-2023 дата публикации

Ultraviolet-enhanced CMOS image sensor based on fluorescent down-conversion material Alq3 and preparation method thereof

Номер: CN116581134A
Автор: TANG LIBIN, LUO LEI, CAI YUHUA, ZUO WENBIN
Принадлежит:

The invention discloses an ultraviolet-enhanced CMOS image sensor based on a fluorescent down-conversion material Alq3 and a preparation method of the ultraviolet-enhanced CMOS image sensor, belongs to the technical field of ultraviolet photoelectric detection, and particularly relates to an ultraviolet-enhanced silicon-based CMOS image sensor based on a down-conversion nano material and a preparation method of the ultraviolet-enhanced silicon-based CMOS image sensor. According to the ultraviolet-enhanced silicon-based CMOS image sensor, a vacuum thermal evaporation method is adopted, a powdery down-conversion nanometer material Alq3 is plated on the photosensitive surface of a CMOS to form a layer of uniform film, direct coupling of the material and a device is achieved, ultraviolet light is absorbed through the down-conversion nanometer material, and visible light matched with the spectral response peak value of the CMOS is emitted. The ultraviolet response capability of the photoelectric ...

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Номер записи: 2
30-05-2023 дата публикации

Broadband PbS quantum dot-based photoelectric detector and preparation method thereof

Номер: CN116190486A
Автор: TANG LIBIN, YU LIJING, TIAN PIN, HAO QUN, ZHONG HEFU, ZUO WENBIN, SU RUNHONG, LI ZHIHUA, YANG MIN, MA QI, YU LIANJIE
Принадлежит:

The invention discloses a broadband PbS quantum dot-based photoelectric detector and a preparation method thereof, and belongs to the technical field of photoelectric detection. The detector comprises a substrate; the bismuth telluride (Bi2Te3) is formed on the substrate and is subjected to rapid annealing treatment; the PbS colloidal quantum dots are formed on the bismuth telluride (Bi2Te3); and the Al electrode is formed on the PbS colloidal quantum dots. In the preparation method of the photoelectric detector, bismuth telluride (Bi2Te3) grows through a magnetron sputtering method and is annealed in a rapid annealing furnace; the PbS colloidal quantum dot film is formed in a spin-coating mode, and ligand exchange is carried out in the spin-coating process; and after the Al electrode is masked, vapor deposition is carried out by using a physical vapor deposition (PVD) technology. According to the invention, the PbS CQDs have the characteristic of strong absorption, the Bi2Te3 material ...

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Номер записи: 3
30-05-2023 дата публикации

Energy level regulation and control PbS quantum dot photoelectric detector and preparation method thereof

Номер: CN116190485A
Автор: YU LIJING, TANG LIBIN, TIAN PIN, HAO QUN, ZHONG HEFU, ZUO WENBIN, LEI XIAOHONG, DENG GONGRONG, WANG JINGYU, HUANG JUNBO, FENG JIANGMIN, YUAN JUN, GONG XIAOXIA, SHI JINGMEI
Принадлежит:

The invention discloses an energy level regulation and control PbS quantum dot photoelectric detector and a preparation method thereof, and belongs to the technical field of photoelectricity. The detector comprises a substrate; the ITO transparent electrode layer is formed on the substrate; the AZO functional layer is formed on the ITO transparent electrode layer; the PbS colloidal quantum dots are formed on the AZO functional layer; the bismuth telluride (Bi2Te3) charge transport layer is formed on the PbS colloidal quantum dots; and the Al electrode is formed on the Bi2Te3 charge transport layer. According to the preparation method of the detector, the AZO functional layer is realized through a magnetic control method, the PbS quantum dot film is realized through multiple times of spin coating and ligand exchange, bismuth telluride (Bi2Te3) grows through a magnetron sputtering method, and the Al electrode layer is realized through a vacuum evaporation method. According to the detector ...

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Номер записи: 4