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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 7. Отображено 7.
16-07-2020 дата публикации

HIGH-INTEGRATION LITHIUM NIOBATE/SILICON NITRIDE OPTICAL WAVEGUIDE INTEGRATED STRUCTURE AND PREPARATION METHOD THEREOF

Номер: WO2020143712A1
Автор: LI, Zhenyu, ZHU, Houbin, ZHANG, Xiuquan, ZHANG, Tao, LI, Yangyang
Принадлежит:

A high-integration lithium niobate/silicon nitride optical waveguide integrated structure and a preparation method thereof, comprising, from bottom to top, a silicon substrate layer (1), a separation layer, a fourth silicon oxide layer (4) and a lithium niobate thin film layer (5), a silicon nitride optical waveguide (6) being deposited on the fourth silicon oxide layer (4), and embedded in the separation layer, a thickness of the fourth silicon oxide layer (4) being 10-100 nm; a silicon oxide layer (4) tens of nanometers thick being present between the silicon nitride optical waveguide (6) and the lithium niobate thin film (5), said silicon oxide layer having controllable thickness, small deviation of thickness, flat surfaces and good uniformity, an optical signal being capable of achieving good coupling between the lithium niobate and the silicon nitride after preparation into a device, causing the prepared device to have high bandwidth and low loss, and the device to have good consistency ...

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Номер записи: 1
13-02-2020 дата публикации

MICRON-SCALE SINGLE-CRYSTAL THIN FILM

Номер: WO2020029069A1
Автор: ZHANG, Xiuquan, ZHU, Houbin, HU, Wen, LUO, Juting, HU, Hui, LI, Yangyang
Принадлежит:

Provided is a micron-scale single-crystal thin film. The micron-scale single-crystal thin film comprises: a substrate layer; and a micron single-crystal thin film layer, located on the substrate layer; a transition layer is provided between the substrate layer and the micron single-crystal thin film layer, and the transition layer comprises a first transition layer provided adjacent to the substrate layer and a second transition layer provided adjacent to the micron single-crystal thin film layer; and the transition layer comprises H and at least one plasma gas element used in plasma bonding of the substrate layer with the micron single-crystal thin film layer.

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Номер записи: 2
18-04-2019 дата публикации

NANO-SCALE SINGLE CRYSTAL THIN FILM

Номер: WO2019071978A1
Автор: HU, Hui, ZHU, Houbin, HU, Wen, LUO, Juting, ZHANG, Xiuquan, LI, Zhenyu, LI, Yangyang
Принадлежит:

Provided is a nano-scale single crystal thin film. The nano-scale single crystal thin film comprises a nano-scale single crystal thin film layer, a first transition layer, an isolation layer, a second transition layer and a substrate layer; the first transition layer is located between the nano-scale single crystal thin film layer and the isolation layer, while the second transition layer is located between the isolation layer and the substrate layer, the first transition layer comprising H elements of a certain concentration.

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Номер записи: 3
06-06-2023 дата публикации

Super-flat composite film and preparation method thereof

Номер: CN116230492A
Автор: HU HUI, HU WEN, LIU GUIYIN, ZHANG XIUQUAN, MENG YAO
Принадлежит:

According to the super-flat composite film and the preparation method thereof provided by the embodiment of the invention, the single-crystal injection sheet prepared based on an ion injection method is bonded with the substrate wafer to form the bonding body, and then the annealing treatment is performed on the bonding body, so that the film layer of the single-crystal injection sheet is transferred to the substrate wafer, and the super-flat composite film is obtained. And then sequentially carrying out wet etching and polishing treatment on the thin film layer. A single crystal wafer without ion implantation cannot be corroded, and can be corroded only after ion implantation, and after wet etching is adopted, the uniformity of a thin film layer is good, but the roughness is not high, so that polishing treatment is adopted for improving the roughness of the thin film layer, and the thickness of the thin film layer is reduced. The TTV of the film layer of the composite film can be reduced ...

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Номер записи: 4
29-08-2023 дата публикации

Preparation method of pyroelectric composite film

Номер: CN116669523A
Автор: HAN ZHIYONG, ZHANG XIUQUAN, LIU YAMING, ZHENG SHANSHAN, LIU GUIYIN
Принадлежит:

The invention discloses a preparation method of a pyroelectric composite film, and the method specifically comprises the steps: injecting stripping gas ions and conductive metal ions into one surface of a film wafer in sequence, and enabling a film layer, a damaged layer and a residual layer to be formed in the film wafer in sequence; bonding the thin film layer of the thin film wafer injection sheet with the isolation layer of the substrate wafer to obtain a bonding body; and carrying out heat treatment on the bonding body, stripping ions in a damaged layer to form a bubble separation layer, separating the film wafer into two parts, and taking the substrate wafer with the film layer as the pyroelectric composite film. The stripping ions are injected firstly, then the conductive metal ions are injected into the damage layer to form the thin film layer, the damage layer and the residual layer, under the action of ion injection and heat treatment, the stripping ions form a separation bubble ...

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Номер записи: 5
04-07-2023 дата публикации

Composite film and preparation method thereof

Номер: CN116390624A
Автор: LIU GUIYIN, ZHANG XIUQUAN, HU HUI, HU WEN
Принадлежит:

The invention provides a composite film and a preparation method thereof, and the preparation method comprises the steps: providing a substrate and a functional injection sheet, the functional injection sheet comprises a residual layer, an injection layer and a film layer which are stacked in sequence; performing first pattern cutting on the surface of at least one of the thin film layer and the substrate so as to form a cutting channel on at least one of the thin film layer and the substrate, and communicating the cutting channel with the outside; enabling bubbles generated in the bonding process to leave from the cutting channel, and obtaining a bonding body; and carrying out heat treatment on the bonding body, stripping the residual layer from the bonding body along the injection layer, and transferring the thin film layer to the substrate to obtain the composite thin film. According to the composite film, the substrate and/or the film layer are/is subjected to pattern cutting before ...

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Номер записи: 6
14-07-2023 дата публикации

Composite film and preparation method thereof

Номер: CN116435171A
Автор: YANG CHAO, LIU YAMING, HU WEN, HU HUI, ZHANG XIUQUAN, LIU GUIYIN
Принадлежит:

The embodiment of the invention provides a composite film and a preparation method thereof. The composite film comprises a substrate layer, a porous layer, an isolation layer and an active layer which are sequentially stacked. Wherein capturing holes for capturing free carriers are distributed in the porous layer, namely, the capturing holes can enrich the carriers, so that the attraction of the defects of the isolating layer to the carriers is resisted. Besides, since the isolation layer and the substrate layer are isolated by the porous layer, the defect of the isolation layer cannot attract free carriers in the substrate layer to gather on the interface, facing the substrate layer, of the isolation layer, and the problem that in the prior art, a surface parasitic conductance effect is generated on the contact interface of the substrate layer and the isolation layer is solved. The effective resistivity near a contact interface is improved, and the overall performance of the composite ...

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Номер записи: 7