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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 9. Отображено 9.
02-05-2023 дата публикации

Use method of silicon-phosphorus alloy for growth doping of heavily phosphorus-doped silicon single crystal

Номер: CN116043319A
Автор: SHEN YIJUN, PAN JINPING, XIAO SHIHAO, YANG GUOLIANG, WANG WEILING, ZHANG LI'AN, RAO WEIXING, ZHENG HUANXIN, ZHAO LIANG, FENG XIAOJUAN
Принадлежит:

The invention relates to the technical field of czochralski silicon single crystal growth, in particular to a use method of a silicon-phosphorus alloy for growth doping of a heavily phosphorus-doped silicon single crystal. The method includes: designing a novel quartz boat; preparing a specific weight of silicon-phosphorus alloy with high phosphorus content; the silicon-phosphorus alloy and the novel quartz boat are cleaned together and then placed in the center of the bottom of a quartz crucible; placing the novel quartz boat in the center of the hot area; heating the hot area to a set temperature and keeping the constant temperature for a period of time; and raising the temperature until melting is completed. According to the design, the silicon-phosphorus alloy and the quartz boat can be directly used for growth doping of the heavily phosphorus-doped silicon single crystal together, and the silicon-phosphorus alloy and the quartz boat do not need to be separated; the weight of the required ...

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Номер записи: 1
22-08-2023 дата публикации

Casting device for low-pressure casting

Номер: CN116618613A
Автор: ZHANG LIAN
Принадлежит:

The casting device comprises a supporting column, a first limiting sliding sleeve is slidably connected to the outer surface of the bottom end of the supporting column, a placing platform is fixed to the top end of the first limiting sliding sleeve, a hydraulic cylinder is fixed to the bottom end of the placing platform, and a crucible is fixed to the top end of the placing platform; an extrusion column is fixed to the end, away from the crucible, of the containing platform, a liquid rising pipe penetrates through and is fixed to the interior of the crucible, an air inlet pipe penetrates through and is fixed to the left side of the top end of the crucible, and an air outlet pipe penetrates through and is fixed to the right side of the top end of the crucible; the device comprises a hydraulic cylinder, a placing platform, an extrusion column, a left mounting plate, a right mounting plate, a liquid lifting opening and a plugging block; and through the design of a second rack and a second ...

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Номер записи: 2
14-07-2023 дата публикации

Method for removing metal contamination of monocrystalline silicon wafer and decontamination equipment

Номер: CN116435226A
Автор: ZHANG QINGXU, RAO WEIXING, PAN JINPING, XIAO SHIHAO, SHEN YIJUN, WU XIONGJIE, ZHANG LI'AN, BAI CHAO, YU TIANWEI
Принадлежит:

The invention discloses a method for removing metal contamination of a monocrystalline silicon wafer and decontamination equipment, and particularly relates to the field of semiconductor monocrystalline silicon wafer substrate manufacturing. The device comprises a heat treatment furnace, a controller is fixedly installed outside one end of the heat treatment furnace, and a furnace body carrier boat is fixedly arranged in the heat treatment furnace; a quartz carrier boat is movably arranged above the furnace body carrier boat, a silicon wafer is movably loaded above the quartz carrier boat, a heating plate is fixedly mounted on the surface of the heat treatment furnace, and one end, far away from the controller, of the heat treatment furnace is communicated with an integrated regulating valve; one end of the integrated regulating valve is communicated with a vacuum pump, a first solution evaporator, a second solution evaporator and a tail gas collecting mechanism, and one end of the first ...

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Номер записи: 3
25-07-2023 дата публикации

Method and device for removing oxidation film on edge of silicon wafer

Номер: CN116487250A
Автор: ZHANG QINGXU, SHEN YIJUN, XIAO SHIHAO, WU XIONGJIE, RAO WEIXING, ZHANG LI'AN, DAI MINGMING, XU JIAJUN, PAN JINPING
Принадлежит:

The invention discloses a method and device for removing an oxide film on the edge of a silicon wafer, and belongs to the field of semiconductor silicon wafer production, the method for removing the oxide film on the edge of the silicon wafer is applied to a silicon dioxide film back sealing semiconductor silicon wafer, and a back sealing semiconductor silicon wafer substrate comprises a monocrystalline silicon wafer substrate and a silicon dioxide film. The silicon dioxide film grows on the back surface of a monocrystalline silicon wafer substrate through chemical vapor deposition, and the method comprises the following steps: A, firstly preparing an acid-resistant porous material, then preparing a chemical etching solution in a chemical etching tank, injecting a certain amount of the etching solution into the porous material through a metering pump, and carrying out chemical vapor deposition; and after injection is completed, standing for a certain time to enable the interior of the porous ...

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Номер записи: 4
22-06-2016 дата публикации

Disappear feeding ball of lost pattern casting bottom surface shrinkage porosite shrinkage cavity residue of prevention

Номер: CN0205324638U
Автор: ZHANG LI'AN
Принадлежит:

... 一种预防消失模铸造底面缩松缩孔残渣的补缩球，其特征在于：包括补缩球体、补缩通道、固定座、内芯、观察孔、刻度条、滤网、活性炭、液量监控条、提示装置，所述补缩球体连接有补缩通道，所述补缩球体内部分别安装有内芯和液量监控条，所述补缩球体上开设有观察孔，本实用新型增加了内芯的结构，这样配合补缩球体上的观察孔和刻度条，便于把握金属液冲型的程度，增加了液面检测条，若液面在设定时间内没有发生变化，说明铸件已经完成补缩，节约了人力和时间，滤网和活性炭可以对金属液中的残渣和杂质进行过滤吸附，提高了铸件成品的质量，补缩通道通过固定座与模型连接，避免了金属液冲型过程中补缩通道发生的倾斜、脱落等情况，提升了加工效率。 ...

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Номер записи: 5
04-04-2023 дата публикации

Automatic shakeout machine for casting

Номер: CN115889735A
Автор: ZHANG LI'AN, WEI MINGJUN
Принадлежит:

The automatic shakeout machine for casting comprises a material box, a supporting seat and a vibration motor, a protection box is arranged at the upper end of the material box, a mounting plate is fixedly mounted at the lower end of the protection box, oval blocks are welded to the positions, close to the left edge and the right edge, of the lower end of the mounting plate, and a rotating shaft rod is arranged below the mounting plate; and a plurality of hexagonal seats are mounted on the outer side wall of the rotating shaft rod at equal intervals. According to the device, the accumulation phenomenon can be prevented, castings accumulated on the upper portion can be overturned to the lower portion so that the castings can be vibrated comprehensively, the separation speed of the castings and molding sand can be increased, then the castings can be further machined, the separation effect of the castings and the molding sand can be improved, the molding sand adhering to the castings can be ...

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Номер записи: 6
23-06-2023 дата публикации

Method for preparing seed crystal by using silicon single crystals with different crystal orientations

Номер: CN116277546A
Автор: PAN JINPING, XIAO SHIHAO, SHEN YIJUN, RAO WEIXING, ZHANG LI'AN, CHENG FURONG, FENG XIAOJUAN, ZHAO LIANG, SU WENXIA, XIAO YINPING
Принадлежит:

The invention relates to the technical field of seed crystal processing, in particular to a method for preparing a seed crystal from silicon single crystals with different crystal orientations. 111gt, 111gt; cutting the silicon single crystal rod to obtain sections, and carrying out cylindrical grinding on the outer surface to obtain the section of a cylindrical structure; 111gt, 111gt; a crystal orientation silicon single crystal ingot; s2, performing result matching; 111gt, 111gt; performing X-ray orientation on the side surface of the crystal orientation silicon single crystal ingot, and determining lt; 110gt, 110gt; drawing a line on the end surface of the silicon single crystal ingot as a mark; s3, enabling the result to be 1t; 110gt, 110gt; the crystal orientation is upward and will be lt; 111gt, 111gt; a crystal orientation silicon single crystal ingot is horizontally placed on a special shelf, the special shelf comprises a frame, a bracket, a bolt and an adjusting nut, and the special ...

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Номер записи: 7
04-04-2023 дата публикации

Casting device for aluminum alloy casting of new energy automobile

Номер: CN115889666A
Автор: ZHANG LI'AN
Принадлежит:

The invention discloses a casting device for an aluminum alloy casting of a new energy automobile, and relates to the technical field of casting fixing. The casting device for the aluminum alloy casting of the new energy automobile comprises a cross rod, a clamping device is arranged on the right side of the cross rod, and a stabilizing device is arranged in a first sliding block; firstly, an automobile casting is placed between a first sliding block and a second sliding block, a first hydraulic rod is extruded, a third hydraulic rod slides towards the bottom side to drive the second sliding block on the right side to slide towards the interior of a base, and therefore the casting is clamped; when a first sliding block slides to the bottom to clamp a casting, the casting extrudes a first pressing block, the first pressing block slides in the first sliding block, a fourth bottom gear is driven by bottom teeth to rotate to drive a second bottom multi-section rod to rotate towards the left ...

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Номер записи: 8
25-08-2023 дата публикации

Back-sealed silicon wafer structure and preparation method thereof

Номер: CN116646237A
Автор: ZHANG QINGXU, XIAO SHIHAO, WU XIONGJIE, RAO WEIXING, SHEN YIJUN, ZHANG LIAN, YU TIANWEI, LIU WEI, PAN JINPING
Принадлежит:

The invention discloses a back-sealed silicon wafer structure and a preparation method thereof, and particularly relates to the field of back-sealed silicon wafer preparation, the back-sealed silicon wafer structure comprises a first component and a second component, and the first component and the second component each comprise a monocrystalline silicon substrate, a low-temperature oxidation film and a polycrystalline silicon film. The polysilicon film includes any one or more of a first deposition layer, a second deposition layer, a third deposition layer, a fourth deposition layer, a fifth deposition layer, and a sixth deposition layer. The back sealing device has the beneficial effects that the back sealing efficiencies of the two structures are different, and can be selected according to the requirements of different products; when the film layer exposed on the outer layer is the polycrystalline silicon film, the back-sealed silicon wafer capable of enhancing the gettering effect is ...

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Номер записи: 9