02-05-2023 дата публикации
Номер: CN116053209A
Принадлежит:
The invention relates to the field of semiconductors, in particular to a cutting method of a gallium nitride wafer and a packaging method of a gallium nitride power device. The front face of the gallium nitride wafer is grooved, so that a gallium nitride layer in a cutting channel is removed, then the gallium nitride wafer is semi-cut, a protective film with higher viscosity is used on the front face of the gallium nitride wafer, and then the back face of the gallium nitride wafer is thinned. According to the method, a part of stress of the gallium nitride wafer is released in advance during grooving, the problem that crystal grains fly away in the back thinning process of the gallium nitride wafer is avoided, the problem that the thinner the gallium nitride wafer is, the higher the risk of breakage during cutting is solved, the problems of edge breakage, warping and the like in a traditional process are also avoided, and the yield of the gallium nitride wafer is improved. Conditions are ...
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