25-04-2023 дата публикации
Номер: CN116013980A
Принадлежит:
The invention provides a power semiconductor device which comprises a first P-type region, a first N-type region, a second P-type region and a second N-type region which are sequentially arranged from bottom to top, the second N-type region is embedded into the second P-type region, the top surface of the second N-type region is coplanar with the top surface of the second P-type region, and the top surface of the second N-type region is coplanar with the top surface of the second N-type region. The second P-type region comprises a P base region and a first sub-base region, a second sub-base region and a third sub-base region which are located above the P base region, the second sub-base region is located below the second N-type region and does not exceed the second N-type region in the horizontal direction, the third sub-base region surrounds the second sub-base region, the first sub-base region surrounds the third sub-base region, and the second sub-base region surrounds the third sub-base ...
Подробнее