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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 2. Отображено 2.
23-06-2023 дата публикации

Method for screening high-hardness and high-entropy alloy through particle swarm optimization algorithm assisted machine learning

Номер: CN116312890A
Принадлежит:

The invention relates to a method for screening a high-hardness high-entropy alloy by using a particle swarm optimization algorithm to assist machine learning, which belongs to the technical field of metal materials, and comprises the following steps: acquiring hardness data and candidate features of a high-entropy alloy of an AlCoCrCuFeNi system, and establishing a component-hardness data set and a feature data set; the component-hardness data set is subjected to random oversampling, an SVM-rbf model is trained, PSO is used for optimizing the SVM-rbf model, and the high-entropy alloy component proportion with the high hardness value can be obtained; preliminarily screening candidate features of the feature data set by adopting GA (Genetic Algorithm); the screened features are analyzed, GA feature selection is used for an extended feature set, an optimized feature group is obtained, and the model prediction precision is improved; and establishing an RF hardness prediction model by utilizing ...

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07-04-2023 дата публикации

Beta-phase gallium oxide thin film and preparation and doping method thereof

Номер: CN115928014A
Принадлежит:

The invention belongs to the technical field of semiconductor films, and particularly relates to a beta-phase gallium oxide film and a preparation and doping method thereof. The preparation method provided by the invention comprises the following steps: evaporating a gallium oxide material on the surface of a substrate by adopting an electron beam to deposit a film; carrying out high-temperature annealing treatment on the obtained primary beta-phase gallium oxide thin film in air; or the gallium oxide material and the metal zinc particles are evaporated on the surface of the substrate through electron beams to be deposited, and the formed sandwich structure multilayer film is subjected to high-temperature annealing treatment in air to obtain the zinc-doped gallium oxide film. According to the preparation method provided by the invention, electron beam evaporation is adopted to coat the surface of the substrate, and then high-temperature annealing treatment is performed, so that the structures ...

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