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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 11. Отображено 11.
04-07-2019 дата публикации

CHEMICAL MECHANICAL POLISHING SOLUTION

Номер: WO2019129107A1
Автор: PAN, Yijun, JIN, Jianfen, ZHANG, Jian, YAO, Ying, SONG, Kai, CAI, Xinyuan, YANG, Junya, BIAN, Pengcheng, LI, Heng
Принадлежит:

Disclosed is a chemical mechanical polishing solution. The polishing solution comprises abrasive particles, a water-soluble polymer, and a nonionic surfactant; the nonionic surfactant is polyvinylpyrrolidone. The polishing solution of the present invention has excellent stability, and can significantly change a polysilicon removal rate under alkaline conditions, thereby achieving adjustment to a selection ratio of polysilicon to silicon oxide and improving the polysilicon planarization efficiency.

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Номер записи: 1
04-07-2019 дата публикации

CHEMICAL-MECHANICAL POLISHING LIQUID

Номер: WO2019129105A1
Автор: YANG, Junya, JIN, Jianfen, SONG, Kai, MA, Jian, WANG, Guohao, CAI, Xinyuan, LI, Heng, HUANG, Yueyue, ZHOU, Wenting
Принадлежит:

Disclosed is a chemical-mechanical polishing liquid, comprising silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant and a sulfonate anionic surfactant. By using the polishing liquid disclosed in the present invention, the removal rate of copper can be improved while also reducing the removal rate of tantalum, and the phenomena of dish-shaped recessions and dielectric layer corrosion occurring on polished copper wires are improved.

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Номер записи: 2
06-07-2017 дата публикации

CHEMICAL MECHANICAL POLISHING SLURRY AND APPLICATION THEREOF

Номер: WO2017114309A1
Автор: YAO, Ying, JING, Jianfen, CAI, Xinyuan, QIU, Tengfei, YANG, Junya
Принадлежит:

Disclosed in the present invention are a chemical mechanical polishing slurry and an application thereof, the polishing slurry comprising: (a) grinding particles, (b) aminosilane coupling agent, (c) azole compound, (d) complexing agent, (e) organic phosphoric acid, (f) oxidizing agent, and (g) water. The chemical mechanical polishing slurry of the present invention is used for polishing through-silicon vias (TSV) and IC blocking layers, and is capable of meeting the requirements with respect to polishing rates and selection ratio for various materials. The polishing slurry has a strong correcting ability for a surface of a silicon wafer device, can achieve rapid planarization, and prevent local and overall corrosion that occurs in the metal polishing process, thus improving work efficiency and reducing production cost.

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Номер записи: 3
05-07-2018 дата публикации

CHEM-MECHANICAL POLISHING LIQUID FOR BARRIER LAYER

Номер: WO2018120808A1
Автор: YAO, Ying, PAN, Yijun, JING, Jianfen, DU, Lingxi, CAI, Xinyuan, SONG, Kai, YANG, Junya, ZHANG, Jian, WANG, Chunmei, WANG, Yuchun
Принадлежит:

Provided is a chem-mechanical polishing liquid for planarization of a barrier layer, comprising abrasive particles, an azole compound, a complexing agent, a nonionic surfactant and an oxygenant, wherein the nonionic surfactant is a block polyether compound. The chem-mechanical polishing liquid has a high removal rate for barrier materials and dielectric materials, and a adjustable removal rate for low dielectric materials and copper under mild conditions, and can control well the generation of dish down, dielectric layer corrosion and metallic corrosion, and decrease surface pollutants, and the polished wafer is characterized by excellent morphology.

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Номер записи: 4
05-07-2018 дата публикации

CHEMICAL-MECHANICAL POLISHING LIQUID FOR FLATTENING BARRIER LAYER

Номер: WO2018120809A1
Автор: PAN, Yijun, JING, Jianfen, YAO, Ying, DU, Lingxi, YANG, Junya, ZHANG, Jian, CAI, Xinyuan, SONG, Kai, WANG, Yuchun
Принадлежит:

The present invention provides a chemical-mechanical polishing liquid for flattening a barrier layer, comprising: abrasive particles, an azole compound, a complexing agent, a nonionic surfactant, and an oxidizing agent. The nonionic surfactant is polyethyleneglycol. The chemical-mechanical polishing liquid has high removal rate for barrier layer and dielectric layer materials under a mild condition, has adjustable removal rate for low dielectric materials and copper, can effectively control generation of dishing, dielectric layer erosion, and metal erosion in the polishing process, can reduce surface contaminants, and therefore has excellent market application prospect.

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Номер записи: 5
14-07-2023 дата публикации

Chemical mechanical polishing solution and application thereof

Номер: CN116426219A
Автор: YANG JUNYA, JING JIANFEN, ZHENG SHANSHAN, CAI XINYUAN, LI JINLIN, WANG XI, TANG HAOJIE, WANG GUOHAO, YANG ZHENG, WANG MIAOMIAO
Принадлежит:

The invention provides a chemical mechanical polishing solution and a use method thereof. Specifically, the chemical mechanical polishing liquid comprises grinding particles, a complexing agent, a corrosion inhibitor, a carboxylic ester compound, a metal surface defect improving agent and an oxidizing agent. The chemical mechanical polishing solution can be applied to polishing of metal copper interconnection, has a high metal copper removal rate and a low tantalum removal rate, thus has a high copper/tantalum removal rate selection ratio, can improve dish-shaped recesses and dielectric layer erosion of polished copper wires, and improves the copper/tantalum removal rate selection ratio. And the surface roughness and the surface defect number of the polished copper are reduced.

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Номер записи: 6
04-07-2019 дата публикации

CHEMICAL MECHANICAL POLISHING SOLUTION

Номер: WO2019129103A1
Автор: MA, Jian, JIN, Jianfen, YANG, Junya, SONG, Kai, CAI, Xinyuan, WANG, Guohao, YAO, Ying, BIAN, Pengcheng
Принадлежит:

Disclosed is a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, and at least one polyacrylic acid anionic surfactant. The chemical mechanical polishing solution in the present invention can increase the removal rate of copper and decrease the removal rate of tantalum, and reduce dishing and dielectric layer erosion of a polished copper wire.

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Номер записи: 7
05-07-2018 дата публикации

CHEMICAL MECHANICAL POLISHING LIQUID USED FOR PLANARIZING BARRIER LAYER

Номер: WO2018120812A1
Автор: CAI, Xinyuan, YAO, Ying, JING, Jianfen, PAN, Yijun, DU, Lingxi, SONG, Kai, ZHANG, Jian, YANG, Junya, WANG, Yuchun
Принадлежит:

A chemical mechanical polishing liquid used for planarizing a barrier layer and a use thereof, the polishing liquid comprising silicon dioxide particles, an azole compound, a complexing agent, a siloxane surfactant, and an oxidizing agent. The chemical mechanical polishing liquid can satisfy the polishing rate and selection ratio requirements of various materials during the barrier layer polishing process, has a high correction capacity in respect of surface defects of semiconductor devices, and is capable of achieving planarizing quickly, enhancing work efficiency, and lowering product cost.

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Номер записи: 8
05-07-2018 дата публикации

CHEMICAL MECHANICAL POLISHING LIQUID AND APPLICATIONS THEREOF

Номер: WO2018120807A1
Автор: ZHANG, Jian, JING, Jianfen, YANG, Junya, SONG, Kai, CAI, Xinyuan, YAO, Ying, PAN, Yijun, DU, Lingxi, WANG, Chunmei, WANG, Yuchun
Принадлежит:

A chemical mechanical polishing liquid comprising abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, and at least one polyacrylic anionic surfactant. Also disclosed are applications of the chemical mechanical polishing liquid in polishing copper metal.

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Номер записи: 9
05-07-2018 дата публикации

CHEMICAL-MECHANICAL POLISHING SOLUTION AND APPLICATION THEREOF

Номер: WO2018120811A1
Автор: YANG, Junya, JING, Jianfen, ZHANG, Jian, SONG, Kai, CAI, Xinyuan, YAO, Ying, PAN, Yijun, DU, Lingxi, WANG, Chunmei
Принадлежит:

A chemical-mechanical polishing solution, comprising abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant, and at least one sulphonate anionic surfactant. The polishing solution can be used for polishing copper metal. The present invention improves the effect of the polishing solution on the polishing selection ratio of copper to a tantalum barrier layer and, when used for polishing wafers, can improve dielectric layer corrosion and dishing of polished copper wire, without defects such as copper residue and corrosion after polishing.

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Номер записи: 10
30-06-2023 дата публикации

Chemical mechanical polishing solution and application thereof

Номер: CN116355534A
Автор: MA JIAN, JING JIANFEN, LI YUN, YANG JUNYA, ZHOU JINGYU, SONG KAI, LU HONGYI, WANG TUO, LIU TIANQI, YANG ZHENG
Принадлежит:

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises grinding particles, a complexing agent, an alkanolamide surfactant, an azole corrosion inhibitor and an oxidizing agent, the average particle size of the grinding particles is 40-140 nm; the complexing agent is an aminocarboxylic compound and a salt thereof. The polishing solution has the advantages that (1) the polishing solution is high in copper removal rate and low in tantalum removal rate, so that the polishing solution has a relatively high copper/tantalum removal rate selection ratio; and 2) the polishing solution can improve the dish-shaped recess and dielectric layer erosion of the polished copper wire.

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Номер записи: 11