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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 21. Отображено 21.
16-04-2020 дата публикации

METHOD OF PRODUCING NITRIDE SEMICONDUCTOR FILM

Номер: WO2020075599A1
Автор: TAKAHASHI, Nobuaki, MIURA, Hitoshi, NEISHI, Koji, KATAYAMA, Ryuji, MORI, Yusuke, IMANISHI, Masayuki
Принадлежит:

This method of producing a nitride semiconductor film includes a step of intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and a step of depositing sputtered particles of the gallium nitride that has scattered from the target inside the vacuum chamber on a substrate that has a temperature of 560 to 650°C. The ratio of the nitrogen flow relative to the sum of the nitrogen flow and argon flow supplied to the vacuum chamber is 6 to 18%.

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Номер записи: 1
29-11-2012 дата публикации

ANTIFOGGING ARTICLE AND PROCESS FOR PRODUCING SAME

Номер: WO2012161330A1
Автор: MORI, Yusuke, KISHIKAWA, Noriko
Принадлежит:

Provided are an antifogging article which has excellent antifogging properties, is excellent in terms of marring resistance such as scratch resistance, and has a low initial haze, and a process for producing the antifogging article. The antifogging article comprises a base and a water-absorbing layer which has been disposed on a surface of the base and which contains a crosslinked resin having water-absorbing properties, and is characterized in that the water-absorbing layer contains fine metal oxide particles in an amount of 20-60 mass% of the whole amount and that the antifogging article has a haze of 1% or lower. The process, which is for producing an antifogging article that comprises a base and, disposed on a surface of the base, a water-absorbing layer comprising a water-absorbing crosslinked resin and fine metal oxide particles, the amount of the particles being 20-60 mass% of the amount of the whole layer, comprises: adding some of the amount of the fine metal oxide particles to ...

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Номер записи: 2
14-02-2019 дата публикации

METHOD FOR MANUFACTURING GALLIUM NITRIDE MICROCRYSTALLINE AGGREGATE, AND DEVICE FOR MANUFACTURING GALLIUM NITRIDE MICROCRYSTALLINE AGGREGATE

Номер: WO2019031501A1
Автор: NEISHI, Koji, MIURA, Hitoshi, MORI, Yusuke, IMADE, Mamoru, YOSHIMURA, Masashi, IMANISHI, Masayuki
Принадлежит:

A method for manufacturing a gallium nitride microcrystalline aggregate includes a gallium nitride microcrystal manufacturing step in which: an alkali metal and a nitrogen-containing gas are supplied into a raw-material melt, which contains gallium and a surface tension adjuster that adjusts the surface tension of the melt of gallium; and the gallium and the nitrogen-containing gas are reacted to manufacture gallium nitride microcrystals.

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Номер записи: 3
16-04-2015 дата публикации

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

Номер: WO2015053341A1
Автор: MORI Yusuke, IMADE Mamoru, YOSHIMURA Masashi, ISEMURA Masashi
Принадлежит:

Provided is a method for producing a group III nitride crystal, which exhibits excellent reactivity and operability, and wherein a by-product containing a halogen does not have an adverse effect on crystal formation. A method for producing a group III nitride crystal, which is characterized by comprising a group III nitride crystal production step for producing a group III nitride crystal by reacting a group III metal element, an oxidizing gas and a nitrogen-containing gas with each other.

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Номер записи: 4
14-01-2016 дата публикации

ANTIFOGGING FILM AND DOOR FOR REFRIGERATED SHOWCASE

Номер: WO2016006624A1
Автор: MORI Yusuke, ABE Keisuke, YONEDA Takashige
Принадлежит:

Provided is an antifogging film with which antifogging properties can be imparted to various articles, wherein the antifogging film has exceptional water absorbency, as well as exceptional resistance to peeling. This antifogging film is provided with a resin film, and a water absorbent layer arranged on one principal surface of the resin film, the water absorbent layer having an antifogging duration (T35) of at least 200 seconds in a steam test measured at 35°C by the following method. (Antifogging duration (T35) measurement method) A polyethylene terephthalate (PET) film 100 μm thick composed of a PET film having a water absorbent layer on one principal surface is adhered to one principal surface of a soda lime glass base, so that the water absorbent layer is exposed at the surface, and left to stand for one hour at 23°C, 50% RH. Next, an area 70 mm × 70 mm square on the surface of the water absorbent layer is placed in a sealed state above a hot water bath having a temperature of 35°C ...

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Номер записи: 5
31-10-2013 дата публикации

METHOD FOR PRODUCING GLASS SUBSTRATE WITH SILICON OXIDE FILM CONTAINING INORGANIC FINE PARTICLES

Номер: WO2013161827A1
Автор: KUWAHARA, Yuichi, MORI, Yusuke, ABE, Keisuke, YONEDA, Takashige
Принадлежит:

Provided is a method for producing a glass substrate with a silicon oxide film containing inorganic fine particles, wherein inorganic fine particles having a desired particle diameter can be used in accordance with objective optical characteristics and there is a wide range of choices for inorganic fine particles. A silicon oxide film (12) containing inorganic fine particles is formed by applying a coating liquid onto a glass substrate (10), said coating liquid containing inorganic fine particles (14), a hydrolysis product of an alkoxysilane, and water and/or a (poly)ethylene glycol; or alternatively, a silicon oxide film containing inorganic fine particles is formed by applying a coating liquid onto a glass ribbon when a glass substrate is produced by molding molten glass into the glass ribbon and slowly cooling and then cutting the glass ribbon, said coating liquid containing inorganic fine particles, a hydrolysis product of an alkoxysilane, and water and/or a (poly)ethylene glycol.

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Номер записи: 6
08-10-2015 дата публикации

ANTI-FOGGING ARTICLE AND MANUFACTURING METHOD THEREOF

Номер: WO2015152049A1
Автор: KODAIRA Hirokazu, SUGIHARA Yosuke, MORI Yusuke, YONEDA Takashige
Принадлежит:

An anti-fogging article with both excellent anti-fogging properties and wear resistance, and a manufacturing method thereof are provided. This anti-fogging article comprises a base body, a water absorbent resin layer which is arranged on the base body, and an overcoat layer which is arranged on the water absorbent resin layer and which includes silica particles and the hydrolysis condensate of an alkoxysilane compound. The overcoat layer has a film thickness of 20-350nm, and is formed from an overcoat composition which, for a total of 100 parts by mass of the silica particles and the alkoxysilane compound, contains 90-45 parts by mass of the alkoxysilane compound and 10-55 parts by mass of the silica particles.

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Номер записи: 7
08-03-2018 дата публикации

III NITRIDE MICROCRYSTAL AGGREGATE PRODUCTION METHOD, GALLIUM NITRIDE MICROCRYSTAL AGGREGATE PRODUCTION METHOD, III NITRIDE MICROCRYSTAL AGGREGATE, AND SPUTTERING TARGET

Номер: WO2018042705A1
Автор: TAKAHASHI, Nobuaki, NEISHI, Koji, MIURA, Hitoshi, MORI, Yusuke, IMADE, Mamoru, YOSHIMURA, Masashi
Принадлежит:

The purpose of the present invention is to provide: a III nitride microcrystal aggregate production method, whereby it becomes possible to produce a III nitride microcrystal aggregate that has a low oxygen impurity concentration and is reduced in the number of voids even when voids are not filled with metal gallium; and others. A first aspect of the III nitride microcrystal aggregate production method involves a III nitride microcrystal production step of reacting a Group-III element metal and/or a Group-III element compound with a nitrogen-containing gas in a metal melt containing at least the Group-III element metal and/or the Group-III element compound and an alkali metal and containing no seed crystal substrate to produce a III nitride microcrystal, wherein, in the III nitride microcrystal production step, the III nitride microcrystal is precipitated in such a state that the concentration of nitrogen, which comes from the nitrogen-containing gas dissolved in the metal melt, in a metal ...

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Номер записи: 8
18-10-2012 дата публикации

FUNCTIONAL ARTICLE, ARTICLE FOR TRANSPORT EQUIPMENT, ARTICLE FOR CONSTRUCTION, AND COMPOSITION FOR COATING

Номер: WO2012141150A1
Автор: MORI, Yusuke, KISHIKAWA, Noriko
Принадлежит:

Provided is a functional article having a water absorption layer having wear resistance as well as a water absorption function involved in condensation prevention, humidity control, fouling prevention, fogging prevention, icing prevention, and the like; also provided are an article for transport equipment and an article for construction provided with the same. Further provided is a composition for coating making it possible to form a water-absorbent coating having a water absorption function involved in condensation prevention, humidity control, fouling prevention, fogging prevention, icing prevention, and the like, and also having wear resistance. This functional article having a substrate as well as a water absorption layer provided to at least one surface of the substrate is characterized in that the water absorption layer contains a porous inorganic particulate and also an inorganic oxide serving as a binder component. This composition for coating contains a porous inorganic particulate ...

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Номер записи: 9
26-07-2012 дата публикации

TARGET MATERIAL CONVERSION METHOD, CRYSTAL MANUFACTURING METHOD, COMPOSITION MANUFACTURING METHOD, AND TARGET MATERIAL CONVERSION DEVICE

Номер: WO2012099180A1
Автор: MORI Yusuke, INOUE Tsuyoshi, TAKANO Kazufumi, MATSUMURA Hiroyoshi, ADACHI Hiroaki, SUGIYAMA Shigeru, MURAI Ryota, KURATA Masateru, YOSHIKAWA Hiroshi, HIRAO Mihoko, NAKAYAMA Satoshi, TAKAHASHI Yoshinori, MURAKAMI Satoshi
Принадлежит:

Provided are a target material conversion device, a composition manufacturing method, a crystal manufacturing method and a target material conversion method capable of easily and effectively increasing the concentration of a target material. This method, which converts a target material (103) in a first phase (101), formed from a solid phase or a liquid phase containing the target material (103), to a second phase (102), is characterised by comprising: an approximation step for bringing the first phase (101) and the second phase (102) close together; and a bubble disintegration step for generating bubbles in the vicinity of the boundary between the first phase (101) and the second phase (102) and causing the bubbles to disintegrate.

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Номер записи: 10
22-01-2015 дата публикации

ANTI-FOG ARTICLE

Номер: WO2015008672A1
Автор: SUGIHARA Yosuke, KODAIRA Hirokazu, MORI Yusuke, YONEDA Takashige
Принадлежит:

Provided is an anti-fog article having exceptional anti-fog performance and exceptionally consistent anti-fog performance. An anti-fog article provided with: a substrate; and a water-absorbing layer on the surface of at least a part of the substrate, said layer being mainly composed of a cross-linked resin obtained by reacting a polyepoxide and a curing agent, and containing a surfactant having an HLB of 6-18 as calculated using Griffin's method.

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Номер записи: 11
18-07-2013 дата публикации

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS, GROUP III NITRIDE CRYSTALS AND SEMICONDUCTOR DEVICE

Номер: WO2013105618A1
Автор: MORI Yusuke, IMADE Mamoru, YOSHIMURA Masashi, HIRAO Mihoko, IMANISHI Masayuki
Принадлежит:

Provided is a method for producing group III nitride crystals whereby group III nitride crystals having a large size and excellent quality with little defects can be produced. The method for producing group III nitride crystals (13) comprises: a seed crystal selection step for selecting multiple portions of a group III nitride crystal layer (11) as seed crystals for the formation and growth of the group III nitride crystals (13); a contact step for contacting the surface of the seed crystals with an alkali metal melt; and a crystal growth step for reacting a III group element with nitrogen in the alkali metal melt under a nitrogen-containing atmosphere to form the group III nitride crystals (13) and allow the growth thereof. In the aforesaid method for producing group III nitride crystals (13): the seed crystals are hexagonal crystals; in the seed crystal selection step, the seed crystals are positioned so as to almost avoid the overlap of the m-planes of the individual crystals having ...

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Номер записи: 12
23-03-2017 дата публикации

ANTIFOGGING PRODUCT AND VEHICLE GLASS

Номер: WO2017047524A1
Автор: KODAIRA Hirokazu, SUGIHARA Yosuke, MORI Yusuke
Принадлежит:

To provide an antifogging product and vehicle glass having a favorable appearance and satisfying favorable antifogging and peel resistance. An antifogging product provided with a transparent substrate and an antifogging layer provided on the transparent substrate as an epoxy resin cured product having constituent materials including silicon atoms and aluminum atoms, wherein the antifogging product is characterized in that, in the antifogging layer, the antifogging time (T35) in a 35℃ steam test measured using a specific method is 80 seconds or longer, the variance ΔH in the haze value after the taper abrasion test stipulated in JIS R3212 is 4.0% or less, and the variance ΔYI in yellowing defined in JIS K7373 after being held 500 hours at 100℃ is 3 or less.

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Номер записи: 13
06-05-2016 дата публикации

METHOD FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, GROUP III ELEMENT NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL

Номер: WO2016068181A1
Автор: MORI Yusuke, YOSHIMURA Masashi, IMADE Mamoru, ISEMURA Masashi, KOUKITU Akinori
Принадлежит:

Provided is a production method for growing a group III element nitride crystal using a -c plane-side surface as a crystal growth surface. The present invention is a method for producing a group III element nitride crystal, which comprises a vapor phase growth step for growing a group III element nitride crystal 12 by a vapor phase growth method on a crystal growth surface of a group III element nitride seed crystal 11. This method for producing a group III element nitride crystal is characterized in that: the vapor phase growth step is a step wherein the group III element nitride crystal 12 is grown by reacting a group III element metal, an oxidant and a nitrogen-containing gas with each other, or alternatively a step that includes a reduced product gas generation step wherein a reduced product gas of a group III element oxide is generated by reacting the group III element oxide and a reducing gas with each other and a crystal production step wherein the group III element nitride crystal ...

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Номер записи: 14
02-07-2015 дата публикации

ANTI-FOGGING ARTICLE AND METHOD FOR PRODUCING SAME, BASE-LAYER-FORMING COMPOSITION, AND ARTICLE FOR TRANSPORTATION EQUIPMENT

Номер: WO2015098741A1
Автор: MORI Yusuke, KODAIRA Hirokazu, YONEDA Takashige
Принадлежит:

Provided are: an anti-fogging article having an anti-fogging film which exhibits excellent anti-fogging properties, and also has excellent durability, and specifically, excellent chemical resistance and moisture resistance; an article for use in transportation equipment and equipped with the anti-fogging article; and a base-layer-forming composition having a sufficiently long pot life and used in order to obtain the anti-fogging article. An anti-fogging article having a substrate and an anti-fogging film positioned on at least part of the surface of the substrate, wherein: the anti-fogging film has, in order from the substrate side, a base layer comprising a low-water-absorbing base material, and a water-absorbing layer comprising a water-absorbing material having higher water absorbency than that of the base material; and the base material is obtained by using a base-layer-forming composition which contains (A) 100 parts by mass of a starting-material component for a first curing resin ...

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Номер записи: 15
08-10-2015 дата публикации

ANTI-FOGGING AGENT COMPOSITION, ANTI-FOGGING ARTICLE AND MANUFACTURING METHOD THEREOF

Номер: WO2015152050A1
Автор: KODAIRA Hirokazu, SUGIHARA Yosuke, MORI Yusuke, YONEDA Takashige
Принадлежит:

Provided is an anti-fogging agent composition with excellent anti-fogging properties and peel resistance, and an anti-fogging article obtained using the same. This anti-fogging agent composition contains a first resin with a 90% or higher dissolution rate in water, a second resin with a 50% or lower dissolution rate in water, an alkoxysilane compound and a curing agent. Further, this anti-fogging article is provided with a base body and, arranged in at least part of the region on the base body, a cured product of the aforementioned anti-fogging agent composition. Further, the manufacturing method of the anti-fogging article involves applying the anti-fogging agent composition to form an anti-fogging agent composition layer on the base body, and heat-treating the applied anti-fogging agent composition to form an anti-fogging layer.

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Номер записи: 16
11-09-2015 дата публикации

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND DEVICE FOR PRODUCING GROUP-III NITRIDE CRYSTAL

Номер: WO2015133379A1
Автор: MORI Yusuke, YOSHIMURA Masashi, IMADE Mamoru, ISEMURA Masashi, USUI Akira, SHIBATA Masatomo, YOSHIDA Takehiro
Принадлежит:

By means of a vapor phase growth method, the present invention produces a high-quality group-III nitride crystal that has few defects such as strain, dislocations, and warping and has a large size. This method for producing a group-III nitride crystal includes: a first step for group-III nitride crystal production that produces a first group-III nitride crystal (1003) by means of a liquid phase growth method; and a second step for group-III nitride crystal production that produces a second group-III nitride crystal (1004) on the first crystal (1003) by means of a vapor phase growth method. The method for producing a group-III nitride crystal is characterized in that in the first step for group-III nitride crystal production, the surfaces of a plurality of seed crystals (1003a) of a group-III nitride prepared ahead of time are contacted to an alkali metal melt, the group-III element and nitrogen are caused to react in the alkali metal melt in an atmosphere containing nitrogen, and by means ...

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Номер записи: 17
08-10-2015 дата публикации

ANTIFOGGING AGENT COMPOSITION, ANTIFOGGING ARTICLE, AND METHOD FOR PRODUCING SAME

Номер: WO2015152047A1
Автор: SUGIHARA Yosuke, KODAIRA Hirokazu, MORI Yusuke, YONEDA Takashige
Принадлежит:

Provided are an antifogging agent composition that makes it possible to form an antifogging layer having exceptional yellowing resistance and bleed resistance, and an antifogging article obtained using the same. The antifogging agent composition contains a water-soluble epoxy resin, an aluminum compound, and an alkoxysilane compound and/or a partially hydrolyzed condensate of an alkoxysilane compound. The antifogging article is provided with a substrate, and a resin layer having a saturated water absorption of 50 mg/cm3 or higher and a Martens hardness of 2 N/mm2 or higher, the resin layer being arranged on a region of at least part of the substrate.

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Номер записи: 18
11-09-2015 дата публикации

PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

Номер: WO2015133443A1
Автор: MORI Yusuke, YOSHIMURA Masashi, IMADE Mamoru, ISEMURA Masashi, OKAYAMA Yoshio
Принадлежит:

The purpose of the present invention is to produce, by vapor phase epitaxy, group III nitride crystals of large size, and of high quality containing negligible defects such as strain, dislocation, warpage, and the like. The production process is characterized by including a first group III nitride crystal production step for producing first group III nitride crystals (1003) by liquid phase epitaxy, and a second group III nitride crystal production step for reacting a group III elemental metal, an oxidant, and a nitrogen-containing gas by vapor phase epitaxy on the first crystals (1003), producing second group III nitride crystals (1004); wherein the first group III nitride crystal production step involves bringing the surfaces of a plurality of group III nitride seed crystals (1003a) prepared in advance into contact with an alkali metal melt, and in a nitrogen-containing environment, reacting a group III element and the nitrogen within the alkali metal melt to grow a plurality of group ...

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Номер записи: 19
09-09-2016 дата публикации

METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE

Номер: WO2016140074A1
Автор: MORI, Yusuke, YOSHIMURA, Masashi, IMADE, Mamoru, SHIBATA, Masatomo, YOSHIDA, Takehiro
Принадлежит:

Provided is a method for manufacturing a group-III nitride semiconductor crystal substrate, comprising performing homoepitaxial growth of a group-III nitride single crystal by a vapor-phase growth method on the principal surface of a group-III nitride single crystal grown as a see crystal substrate by a liquid-phase growth method, the method for manufacturing a group-III nitride semiconductor crystal substrate wherein the principal surface of the seed crystal substrate is a +C surface, and the concentration of oxygen atoms in the crystal in the vicinity of the principal surface of the seed crystal substrate is 1×1017 cm-3 or less throughout the entire in-plane area thereof.

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Номер записи: 20
20-06-2013 дата публикации

ANTIFOGGING ARTICLE, METHOD FOR PRODUCING SAME, COMPOSITION FOR FORMING WATER ABSORBENT LAYER, AND ARTICLE FOR TRANSPORTATION DEVICES

Номер: WO2013089165A1
Автор: KISHIKAWA Noriko, MORI Yusuke, YONEDA Takashige
Принадлежит:

Provided are: an antifogging article which has a water absorbent layer that has excellent antifogging properties, excellent durability such as wear resistance and moisture resistance, and excellent appearance; a method for producing the antifogging article; and an article for transportation devices, which is provided with the antifogging article. Also provided is a composition for forming a water absorbent layer for obtaining an antifogging article. An antifogging article which has a base and an antifogging film that is disposed on at least a part of the surface of the base. The antifogging film has a water absorbent layer that is formed on the base surface and is formed of a water absorbent material which has a saturation water absorption of 50 mg/cm3 or more. The water absorbent material is a material which mainly contains a first cured epoxy resin that is obtained by reacting a composition for forming a water absorbent layer, said composition containing a polyepoxide component, a polyaddition ...

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Номер записи: 21