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Применить Всего найдено 7. Отображено 7.
29-01-2015 дата публикации

METHOD FOR MANUFACTURING INJECTION-ENHANCED INSULATED-GATE BIPOLAR TRANSISTOR

Номер: WO2015010618A1
Автор: WANG, Wanli, DENG, Xiaoshe, WANG, Genyi, HUANG, Xuan
Принадлежит:

A method for manufacturing an injection-enhanced insulated-gate bipolar transistor, comprising the following steps: an n-type substrate (12) is provided; a p-type doped layer (14) is formed on the n-type substrate (12); a hard layer (20) is formed on the p-type doped layer (14); a groove (40) extending to the n-type substrate (12) is formed by etching on the p-type doped layer (14); an n-type doped layer (50) is formed on the sidewalls and bottom of the groove (40); the hard layer (20) is removed; p-type impurities of the p-type doped layer (14) and n-type impurities of the n-type doped layer (50) are driven in together, where the p-type impurities are diffused to form a p-type base region (60), and the n-type impurities are diffused to form an n-type buffer layer (70); a gated oxide dielectric layer (80) is formed on the surface of the groove (40); and, a polysilicon layer (90) is deposited in the groove having formed therein the gate oxide dielectric layer (80). In the method for manufacturing ...

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Номер записи: 1
08-01-2015 дата публикации

METHOD FOR MANUFACTURING IGBT

Номер: WO2015000354A1
Автор: HUANG, Xuan, WANG, Wanli, WANG, Genyi
Принадлежит:

A method for manufacturing an insulated-gate bipolar transistor (IGBT), comprising: providing a substrate (10) having a first surface and a second surface; forming channels (14) that extend into the substrate (10) at intervals on the first surface of the substrate (10), where the type of electrical conductance of the channels (14) is different from the type of electrical conductance of the substrate (10); forming a drift region (15) on the first surface of the substrate (10); and, thinning the substrate (10) starting from the second surface of the substrate (10) until the channels (14) are exposed, where the channels (14) and the thinned substrate (10) are alternately arranged at intervals. In the manufacturing process, the need for additional dimension control for a sheet is obviated, the thickness of the sheet is sufficient in satisfying a requirement for component manufacturing and a requirement of an automatic transporting apparatus; the need for double-sided lithography of the substrate ...

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Номер записи: 2
08-01-2015 дата публикации

METHOD FOR MANUFACTURING IGBT

Номер: WO2015000355A1
Автор: HUANG, Xuan, WANG, Wanli, WANG, Genyi
Принадлежит:

A method for manufacturing an IGBT, comprising: providing a substrate having a first surface and a second surface and of a first or second type of electrical conductance; forming grooves at intervals on the first surface of the substrate; filling a semiconductor material of the second or first type of electrical conductance into the grooves to form channels, where the type of electrical conductance of the channels is different from the type of electrical conductance of the substrate; bonding on the first surface of the substrate to form a drift region of the second type of electrical conductance; forming a front-side structure of the IGBT on the basis of the drift region; thinning the substrate starting from the second surface of the substrate until the channels are exposed; and, forming a rear-side metal electrode on the channels and the thinned substrate. The method has no specific requirement with respect to sheet flow capacity, nor requires a double-sided exposure machine apparatus, ...

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Номер записи: 3
05-03-2015 дата публикации

REVERSE CONDUCTION INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MANUFACTURING METHOD

Номер: WO2015027961A1
Автор: WANG, Wanli, DENG, Xiaoshe, WANG, Genyi, RUI, Qiang
Принадлежит:

A reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method, comprising the following steps: providing a substrate having an IGBT structure formed on the front surface thereof; implanting P+ ions onto the back surface of the substrate; forming a channel on the back surface of the substrate through photolithography and etching processes; planarizing the back surface of the substrate through a laser scanning process to form P-type and N-type spacer structures; and forming a back surface collector by conducting a back metalizing process on the back surface of the substrate. Laser scanning process can process only the back surface structure requiring annealing, thus solve the problem of the front surface structure of the reverse conduction IGBT restricting back surface annealing to a low temperature, improving the P-type and N-type impurity activation efficiency in the back surface structure of the reverse conduction IGBT, and enhancing the performance of the reverse ...

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Номер записи: 4
05-03-2015 дата публикации

METHOD FOR MANUFACTURING INSULATED-GATE BIPOLAR TRANSISTOR

Номер: WO2015027920A1
Автор: HUANG, Xuan, WANG, Wanli, WANG, Genyi
Принадлежит:

A method for manufacturing an insulated-gate bipolar transistor comprises: providing a first conductive-type semiconductor chip, the semiconductor chip comprising a first surface and a second surface opposite the first surface, and injecting impurities on the first surface to form a first conductive-type or second conductive-type conductive layer; forming grooves at an interval on a surface of the first conductive-type or second conductive-type conductive layer; filling a second conductive-type or first conductive-type semiconductor material inside the grooves to form channels, the channels and the conductive layer being arranged at an interval and in an alternating manner; forming an oxidation layer on the conductive layer and channels; bonding a substrate semiconductor chip on the oxidation layer; thinning the semiconductor chip from the second surface, the thinned first conductive-type semiconductor chip serving as a drift region; forming a front-side structure of an insulated-gate bipolar ...

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Номер записи: 5
05-03-2015 дата публикации

METHOD FOR MANUFACTURING REVERSE-CONDUCTING FIELD-STOP INSULATED-GATE BIPOLAR TRANSISTOR

Номер: WO2015027850A1
Автор: HUANG, Xuan, WANG, Wanli, WANG, Genyi
Принадлежит:

A method for manufacturing a reverse-conducting FSIGBT comprises: providing a P-type silicon substrate (10); forming structures of multiple grooves (11) on a side of the substrate through photolithography and etching; filling N-type silicon inside the grooves (11), and forming a back PN junction structure on a surface of the substrate; fabricating, through an epitaxial process, an N-type field-stop layer (22) on the surface filled with the N-type silicon of the substrate; fabricating an N-type drift region (20) epitaxially on the field-stop layer (22); fabricating an IGBT front-side structure by using an IGBT front-side process; thinning the substrate to the back PN junction structure; and forming a back metal electrode (19) on a surface opposite the field-stop layer (22) of the back PN junction structure. The method is compatible with an existing conventional process, and does not require a dedicated chip conveyor device, thereby lowering a cost.

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Номер записи: 6
05-03-2015 дата публикации

METHOD FOR MANUFACTURING INSULATED-GATE BIPOLAR TRANSISTOR

Номер: WO2015027928A1
Автор: HUANG, Xuan, WANG, Wanli, WANG, Genyi
Принадлежит:

A method for manufacturing an insulated-gate bipolar transistor comprises: providing a first conductive-type semiconductor chip, the semiconductor chip comprising a first surface and a second surface opposite the first surface, and injecting impurities on the first surface of the semiconductor chip to form a first conductive-type or second conductive-type conductive layer; forming, inside the conductive layer at an interval, second conductive-type or first conductive-type channels extending into the conductive layer, the channels and the conductive layer being arranged at an interval and in an alternating manner and having different conductive types; forming an oxidation layer on the channels; bonding a substrate semiconductor chip on the oxidation layer; thinning the semiconductor chip from the second surface of the semiconductor chip, the thinned first conductive-type semiconductor chip serving as a drift region; forming a front-side structure of an insulated-gate bipolar transistor based ...

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Номер записи: 7