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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 6. Отображено 6.
03-04-2014 дата публикации

DEVICE AND METHOD FOR DETECTING QUALITY OF MICROELECTRONIC PACKAGING TECHNOLOGY BASED ON PHOTO-THERMAL IMAGING

Номер: WO2014048015A1
Автор: LIU, Sheng, DAI, Yiquan, GAN, Zhiyin, WANG, Xiaoping
Принадлежит:

Provided is a device for detecting the quality of a microelectronic packaging technology based on photo-thermal imaging, comprising an image acquisition device, an operating platform, a control device and a data processing device; wherein the image acquisition device comprises a support beam (1), a translational electric motor (2), an imaging probe (4) and a light emitter (5); the translational electric motor (2) is fixed to the lower side of the beam, and the imaging probe is perpendicularly fixed to a moving block in the translational electric motor (2); the light emitter (5) is connected to the moving block through an adjustable connection piece, and by adjusting the adjustable connection piece, light emitted by the light emitter will enter the imaging probe (4) after being reflected by a sample (6); the data processing device is used for data processing of light images and thermal images obtained by the image acquisition device so as to obtain the correlation coefficient and a coefficient ...

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Номер записи: 1
30-05-2013 дата публикации

HYDRIDE VAPOR PHASE EPITAXY DEVICE

Номер: WO2013075390A1
Автор: GAN, Zhiyin
Принадлежит:

A hydride vapor phase epitaxy device comprises a vapor phase epitaxy reaction chamber. A gas input device (1) is disposed on an upper portion of the reaction chamber. A quartz boat (4) is disposed below the gas input device (1). A chip-carrying disk (6) is disposed on a lower portion of the reaction chamber. A heating device (5, 8) is disposed above and below the chip-carrying disk (6). The heating device (8) below the chip-carrying disk (6) is separated from a reaction region (11) by a chip-carrying disk support (9). The bottom of the reaction chamber is provided with a gas discharging port (10). The advantages of the present invention are: generation of a metal chloride and epitaxy growing of the material may be performed in one reaction chamber, thereby making the structure simple; the heating device above and below the chip-carrying disk can adjust the temperature gradient distribution in the reaction chamber, thereby improving the crystal quality of the material; the device has the ...

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Номер записи: 2
23-05-2023 дата публикации

Internal hot wall type molecular beam epitaxy cavity

Номер: CN116145244A
Автор: LIU SHENG, GAN ZHIYIN, SHEN QIAO, ZHI CHENGYANG, YAN HAN
Принадлежит:

The invention provides an internal hot wall type molecular beam epitaxy cavity. A telescopic transmission mechanism and a corrugated pipe are installed on the upper portion in the reaction cavity, a tray heating device and a tray support are installed on the telescopic transmission mechanism and the corrugated pipe, a quartz ring is installed on the lower portion of the reaction cavity, and a gas source injection opening, a vacuum extraction opening, a first source furnace and a second source furnace are installed in the quartz ring. And an infrared heating light source I and an infrared heating light source II are mounted on the side edge below the reaction cavity. The light source power of the first infrared heating light source and the second infrared heating light source is adjusted according to the molecular beam epitaxy growth material and the technological process to heat the quartz ring, and the quartz ring achieves uniform temperature in the circumferential space through rotation ...

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Номер записи: 3
23-05-2023 дата публикации

Multi-source online switching molecular beam epitaxy cavity and method

Номер: CN116145245A
Автор: LIU SHENG, GAN ZHIYIN, SHEN QIAO, ZHI CHENGYANG, YAN HAN
Принадлежит:

The invention provides a multi-source online switching molecular beam epitaxy cavity and method, and is characterized in that the multi-source online switching molecular beam epitaxy cavity comprises an upper cavity and a lower cavity, the upper cavity is respectively provided with a sample inlet, an upper vacuum extraction opening and a substrate bracket, and the lower cavity is respectively provided with a lower vacuum extraction opening, a source furnace bracket I and a source furnace bracket II; and a flat valve is arranged between the upper cavity and the lower cavity. When multi-layer multi-compound molecular beam epitaxial growth is carried out, the lower rotating shaft drives the source furnace bracket to rotate, so that a plurality of source furnaces are switched to be below the substrate on line, and the on-line switching of required reaction sources is realized. According to the invention, the problem of continuous growth of a multi-component multi-layer thin film in a conventional ...

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Номер записи: 4
18-08-2023 дата публикации

Laser processing system integrated with MBE device

Номер: CN116607209A
Автор: LIU SHENG, HIGASHIYOSHI, GAN ZHIYIN, SHEN QIAO, LEI CHENG, WENG YUEYUN, LU XIANGYU, LIU JIANHUI, ZHOU YIGANG
Принадлежит:

The laser processing system comprises an MBE growth chamber, a sample table, a light path mechanism, a heat insulation mechanism and a cooling mechanism, and an opening is formed in one side of the MBE growth chamber; the sample table is fixed in the MBE growth chamber and corresponds to the opening in position, and the sample table is used for placing a substrate sample material; the light path mechanism is oppositely arranged on one side of the MBE growth chamber, a light emitting end is arranged on the light path mechanism, one side of the light emitting end penetrates through an opening of the MBE growth chamber, extends into the MBE growth chamber and is oppositely spaced from the sample table, and the light path mechanism is connected with the opening of the MBE growth chamber in a sealed mode. And the sample is processed in a short distance by adopting a laser direct writing mode, so that the laser focusing capability is improved, and the precision and the quality of laser processing ...

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Номер записи: 5
23-05-2023 дата публикации

Molecular beam epitaxy device and method for in-situ preparation of patterned microstructure film

Номер: CN116145246A
Автор: LIU SHENG, GAN ZHIYIN, SHEN QIAO, ZHI CHENGYANG, YAN HAN
Принадлежит:

The invention provides a molecular beam epitaxy device and method for in-situ preparation of a graphic microstructure film. A grating lens, a plane super lens and a laser light source are installed at the bottom of a reaction cavity. In the molecular beam epitaxy process, a laser light source is changed into parallel light through a plane super lens, and then the parallel light forms a plane microstructure pattern through a grating lens and vertically irradiates the surface of a substrate. And the grating lens and the substrate synchronously rotate through the magnetic driving mechanism and the motor control system respectively. According to the invention, in-situ on-line regulation and control of graphical growth of the thin film can be realized.

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Номер записи: 6