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Применить Всего найдено 11. Отображено 11.
28-07-2023 дата публикации

RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116500862A
Автор: HATAKEYAMA JUN, FUKUSHIMA MASAHIRO
Принадлежит:

The invention relates to a resist material and a pattern forming method. The present invention addresses the problem of providing a resist material having high sensitivity and improved LWR and CDU, and a pattern forming method using the same. [Solution] A resist material containing an acid generator containing a sulfonium salt represented by formula (1).

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Номер записи: 1
30-05-2023 дата публикации

Conductive polymer composition, covering product, and pattern forming method

Номер: CN116178948A
Автор: NAGASAWA TAKAYUKI, HATAKEYAMA JUN
Принадлежит:

The purpose of the present invention is to provide an electroconductive polymer composition which can be suitably used for filtering, has good flat film-forming properties on an electron beam resist, exhibits excellent antistatic performance even in an electron beam drawing process, and minimizes the influence of acid diffused by the film. The antistatic film for electron beam resist drawing also has excellent peelability. The conductive polymer composition contains (A) a polyaniline-based conductive polymer having a repeating unit represented by general formula (1), and (B) a polymer having a structure represented by general formula (2). In formula (1), R1-R4 each represents a hydrogen atom, an acidic group, a hydroxyl group, an alkoxy group, a carboxyl group, a nitro group, a halogen atom, or a hydrocarbon group. In formula (2), R5 and R6 each independently represent a hydrogen atom, a linear or branched cyclic alkyl group having 1-10 carbon atoms, or a hydrocarbon group containing a ...

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Номер записи: 2
08-08-2023 дата публикации

RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116560186A
Автор: HATAKEYAMA JUN, FUKUSHIMA MASAHIRO
Принадлежит:

The invention relates to a resist material and a pattern forming method. The present invention addresses the problem of providing a resist material having high sensitivity and improved LWR and CDU, and a pattern forming method using the same. The resist material contains a base polymer including a repeating unit (a) having a salt structure composed of a sulfonic acid anion bonded to a polymer main chain and a sulfonium cation represented by formula (1).

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Номер записи: 3
26-05-2023 дата публикации

POSITIVE RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116165845A
Автор: HATAKEYAMA JUN, KIKUCHI SHUN, OYAMA KOSUKE
Принадлежит:

The invention relates to a positive resist material and a pattern forming method. The present invention addresses the problem of providing: a positive resist material which has controlled acid diffusion, has superior resolution, edge roughness, and small dimensional variation than known positive resist materials, and which has a good pattern shape after exposure; and a pattern forming method. [Solution] A positive resist material containing a base polymer in which the terminal is terminated with an ammonium salt of an iodine atom-containing acid having a thioether group attached thereto.

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Номер записи: 4
26-05-2023 дата публикации

POSITIVE RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116165846A
Автор: HATAKEYAMA JUN, KIKUCHI SHUN, OYAMA KOSUKE
Принадлежит:

The invention relates to a positive resist material and a pattern forming method. The present invention addresses the problem of providing: a positive resist material which has controlled acid diffusion, has superior resolution, edge roughness, and small dimensional variation than known positive resist materials, and which has a good pattern shape after exposure; and a pattern forming method. [Solution] A positive resist material containing a base polymer, the terminal of which is terminated with a salt comprising an ammonium cation linked to a thioether group and an anion containing a fluorine atom.

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Номер записи: 5
28-07-2023 дата публикации

RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116500860A
Автор: HATAKEYAMA JUN, FUKUSHIMA MASAHIRO
Принадлежит:

The invention relates to a resist material and a pattern forming method. The present invention addresses the problem of providing a resist material having high sensitivity and improved LWR and CDU, and a pattern forming method using the same. [Solution] A resist material containing an acid generator containing a sulfonium salt represented by formula (1). In the formula, RAL is a cyclic secondary or tertiary ester type acid labile group having a predetermined aromatic group.

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Номер записи: 6
08-08-2023 дата публикации

RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116560190A
Автор: HATAKEYAMA JUN, FUKUSHIMA MASAHIRO
Принадлежит:

The invention relates to a resist material and a pattern forming method. The present invention addresses the problem of providing a resist material having high sensitivity and improved LWR and CDU, and a pattern forming method using the same. The resist material contains a base polymer including a repeating unit (a) having a salt structure composed of a sulfonic acid anion bonded to a polymer main chain and a sulfonium cation represented by formula (1).

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Номер записи: 7
30-06-2023 дата публикации

CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

Номер: CN116360217A
Автор: MASUNAGA KEIICHI, HATAKEYAMA JUN, WATANABE SATOSHI, FUNATSU AKIYUKI, KOTAKE MASAAKI, FUKUSHIMA MASAHIRO
Принадлежит:

The invention relates to a chemically amplified positive resist composition and a resist pattern forming method. Provided is a chemically amplified positive resist composition capable of forming a resist film having extremely high resolution, low LER, excellent rectangularity, and capable of forming a pattern in which the influence of a development load is suppressed. The invention relates to a chemically amplified positive resist composition, which comprises a base polymer, the base polymer contains a polymer including a unit containing a phenolic hydroxyl group, a unit in which the phenolic hydroxyl group is protected by an acid-labile group, and a unit in which the carboxyl group is protected by an acid-labile group. Or a polymer comprising a unit containing a phenolic hydroxyl group and a unit in which the phenolic hydroxyl group is protected by an acid-labile group, or a polymer comprising a unit containing a phenolic hydroxyl group and a unit in which the carboxyl group is protected ...

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Номер записи: 8
19-05-2023 дата публикации

POSITIVE RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116136647A
Автор: HATAKEYAMA JUN, OYAMA KOSUKE, KIKUCHI SHUN
Принадлежит:

The invention relates to a positive resist material and a pattern forming method. The present invention addresses the problem of providing: a positive resist material which has controlled acid diffusion, has superior resolution, edge roughness, and small dimensional variation than known positive resist materials, and which has a good pattern shape after exposure; and a pattern forming method. [Solution] A positive resist material containing a base polymer, the terminal of which is terminated with a sulfonium salt containing a carboxylic acid anion linked to a thioether group.

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Номер записи: 9
28-07-2023 дата публикации

RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116500861A
Автор: HATAKEYAMA JUN, FUKUSHIMA MASAHIRO
Принадлежит:

The invention relates to a resist material and a pattern forming method. The present invention addresses the problem of providing a resist material having high sensitivity and improved LWR and CDU, and a pattern forming method using the same. [Solution] A resist material containing an acid generator containing a sulfonium salt represented by formula (1).

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Номер записи: 10
19-05-2023 дата публикации

POSITIVE RESIST MATERIAL AND PATTERN FORMING METHOD

Номер: CN116136648A
Автор: HATAKEYAMA JUN
Принадлежит:

The invention relates to a positive resist material and a pattern forming method. The present invention addresses the problem of providing: a positive resist material which has controlled acid diffusion, has superior resolution, edge roughness, and small dimensional variation than known positive resist materials, and which has a good pattern shape after exposure; and a pattern forming method. [Solution] A positive resist material containing a base polymer, the ends of which are blocked by a group represented by any one of formulae (a)-1 to (a)-3.

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Номер записи: 11