03-01-2019 дата публикации
Номер: WO2019000532A1
Принадлежит:
Disclosed in the present application is an ionization chamber, applied to an ion implanting device. The ionization chamber comprises a chamber, gas supply tubes and filaments, the gas supply tubes and the filaments being located within the chamber, the gas supply tubes being bent to form closed frames, the filaments being accommodated in the frames, the filaments generating thermoelectrons when being powered on, the gas supply tubes being provided, at the sides facing the filaments, with gas outlet holes, and gas outlet holes being used for outputting an ion source gas, the ion source gas striking the thermoelectrons, so as to generate plasmas. The present application further discloses an ion implanting device and an ion implanting method. Due to the uniform collision between the ion source gas and the thermoelectrons, the concentration of the plasmas generated at various positions in the chamber is uniform, improving the effect of ion implantation, reducing the adjustment of the current ...
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