08-08-2023 дата публикации
Номер: CN116565095A
Принадлежит:
The invention provides a reversed polarity light emitting diode and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The light emitting diode comprises a substrate, a transparent conducting layer, a dielectric layer, an epitaxial layer and a first electrode, the transparent conducting layer, the dielectric layer and the epitaxial layer are sequentially stacked on the substrate, and the first electrode is located on the surface, away from the substrate, of the epitaxial layer; the surface, far away from the substrate, of the dielectric layer is provided with a first through hole exposing the transparent conductive layer, and at least part of the transparent conductive layer is located in the first through hole and connected with the epitaxial layer; the orthographic projection of the first electrode on the substrate and the orthographic projection of the first through hole on the substrate at least partially coincide. According to the embodiment ...
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