25-07-2023 дата публикации
Номер: CN116487331A
Принадлежит:
The invention discloses a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate which comprises an array region and a peripheral region, and the peripheral region comprises a first region and a second region; forming a first laminated structure in the first region, and forming a second laminated structure in the array region and the second region; carrying out heat treatment on the substrate, so that atoms in the work function layer are diffused into the second dielectric layer, and the second dielectric layer and the first dielectric layer are subjected to interface interaction; removing the first laminated structure to the second dielectric layer, and removing the second laminated structure to the second dielectric layer; forming a fourth barrier layer and a second conductive layer on the first region and the second region; wherein the ratio of the content of metal elements to the content of non-metal elements in the first barrier ...
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