HIGH DIELECTRIC CONSTANT COMPOSITE MATERIAL AND APPLICATION THEREOF

Provided is a high dielectric constant composite material and a method for preparing an organic thin film transistor using the material as a dielectric layer. The method comprises: using a sol-gel method, hydrolyzing a terminal group-containing silane coupling agent to form a functional terminal group-containing silica sol, which is then cross-linked with an organic polymer to form a composite sol as a material of a dielectric layer of the organic thin film transistor; forming a film by a solution method such as spin coating, dip coating, inkjet printing, 3D printing, etc., and forming a dielectric layer after curing; then, preparing a semiconductor layer and an electrode layer respectively to prepare an organic thin film transistor device. The organic thin film transistor based on the composite dielectric material has a mobility of 5 cm2/V·s, which exceeds the mobility of thin film transistors with SiO2 as the dielectric layer, and the organic thin film transistor has a low threshold voltage ...