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Небесная энциклопедия

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Применить Всего найдено 6. Отображено 6.
10-01-2013 дата публикации

SOLAR CELL ELEMENT AND MANUFACTURING METHOD FOR SAME

Номер: WO2013006016A2
Принадлежит:

The present invention relates to a solar cell element and a manufacturing method for same. The solar cell element, according to the present invention, comprises: a substrate which transmits light; a first electrode, which is formed on the substrate and made of conductive and light-transmitting material, and which comprises a plurality of nano branch structures, each of which has a nano-scale tree branch shape; a photoactive layer, which is formed on the first electrode provided with an electron donor and an electron acceptor; and a second electrode, which is formed on the photoactive layer made of a conductive material. Tthe present invention can increase light pathways in the photoactive layer by having a plurality of nano branch structures, in which the first electrode effectively expands and scatters incident light, and thereby can improve the efficiency of the solar cell element by increasing the amount of light absorbed in the photoactive layer. Further, as the photoactive layer is ...

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12-01-2012 дата публикации

LIGHT-EMITTING DEVICE HAVING AN MGO PYRAMID STRUCTURE AND MANUFACTURING METHOD FOR SAME

Номер: WO2012005459A3
Принадлежит:

The present invention relates to a light-emitting device having a gallium nitride-based group III-V compound semiconductor and a manufacturing method for same. The light-emitting device having a gallium nitride-based group III-V compound semiconductor comprises: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index control layers which have refractive indices less than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, and the pyramid structure is formed on the surface of the second ...

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10-01-2013 дата публикации

SOLAR CELL ELEMENT AND MANUFACTURING METHOD FOR SAME

Номер: WO2013006016A3
Принадлежит:

The present invention relates to a solar cell element and a manufacturing method for same. The solar cell element, according to the present invention, comprises: a substrate which transmits light; a first electrode, which is formed on the substrate and made of conductive and light-transmitting material, and which comprises a plurality of nano branch structures, each of which has a nano-scale tree branch shape; a photoactive layer, which is formed on the first electrode provided with an electron donor and an electron acceptor; and a second electrode, which is formed on the photoactive layer made of a conductive material. Tthe present invention can increase light pathways in the photoactive layer by having a plurality of nano branch structures, in which the first electrode effectively expands and scatters incident light, and thereby can improve the efficiency of the solar cell element by increasing the amount of light absorbed in the photoactive layer. Further, as the photoactive layer is ...

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10-01-2013 дата публикации

SUBSTRATE FOR SOLAR CELL AND METHOD FOR MANUFACTURING SAME

Номер: WO2013006017A2
Принадлежит:

The present invention relates to a substrate for a solar cell and a method for manufacturing same. The substrate for a solar cell, according to the present invention, is with a substrate for a solar cell having an electrode and an active layer, and comprises a substrate member and a film on one side of the substrate member, wherein the film is made of a material having an anisotropic crystal structure, and has a plurality of concave and convex parts on the surface thereof, the concave and convex parts being spontaneously generated from surface energy differentials of the crystal face of the anisotropic crystal structure. Having the film on one surface of the substrate member by depositing a material having an anisotropic crystal structure, to the present invention enables a spontaneous formation of convex and concave parts on the surface of the film from the surface energy differentials of the crystal face of the anisotropic crystal structure, thereby scattering and expanding the incident ...

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12-01-2012 дата публикации

LIGHT-EMITTING DEVICE HAVING AN MGO PYRAMID STRUCTURE AND MANUFACTURING METHOD FOR SAME

Номер: WO2012005459A2
Принадлежит:

The present invention relates to a light-emitting device having a gallium nitride-based group III-V compound semiconductor and a manufacturing method for same. The light-emitting device having a gallium nitride-based group III-V compound semiconductor comprises: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index control layers which have refractive indices less than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, and the pyramid structure is formed on the surface of the second ...

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10-01-2013 дата публикации

SUBSTRATE FOR SOLAR CELL AND METHOD FOR MANUFACTURING SAME

Номер: WO2013006017A3
Принадлежит:

The present invention relates to a substrate for a solar cell and a method for manufacturing same. The substrate for a solar cell, according to the present invention, is with a substrate for a solar cell having an electrode and an active layer, and comprises a substrate member and a film on one side of the substrate member, wherein the film is made of a material having an anisotropic crystal structure, and has a plurality of concave and convex parts on the surface thereof, the concave and convex parts being spontaneously generated from surface energy differentials of the crystal face of the anisotropic crystal structure. Having the film on one surface of the substrate member by depositing a material having an anisotropic crystal structure, to the present invention enables a spontaneous formation of convex and concave parts on the surface of the film from the surface energy differentials of the crystal face of the anisotropic crystal structure, thereby scattering and expanding the incident ...

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