Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 874. Отображено 100.
12-01-2012 дата публикации

Integrated RF Front End with Stacked Transistor Switch

Номер: US20120007679A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits. 1. An integrated RF Power Amplifier (PA) circuit , comprising:{'b': 1', '1, 'a) an input node to accept an input signal with respect to a reference voltage Vref, coupled to a gate G of a first insulated-gate FET M;'}{'b': 2', '1', '1', '2', '1, 'b) a plurality of additional insulated-gate FETs M to Mn having a same polarity as M and coupled in series with M to form a control circuit configured to control conduction between the reference voltage and an output drive node, wherein FETs M to Mn are each enslaved to M; and'}c) an output coupling capacitor coupling the output drive node to an output load node.21. The integrated circuit of claim 1 , further comprising (d) an output power control input node coupled to a power controlling insulated-gate FET that is coupled in series connection with M.3. The integrated circuit of claim 2 , wherein the power controlling FET is disposed between the reference voltage ...

Подробнее
Номер записи: 1
03-05-2012 дата публикации

Method, System, and Apparatus for RF and DC Switching

Номер: US20120105127A1
Автор: Fleming Lam, Mark L. Burgener
Принадлежит: Peregrine Semiconductor Corp

Embodiments of RF and DC switching are described generally herein. Other embodiments may be described and claimed.

Подробнее
Номер записи: 2
05-07-2012 дата публикации

Method and Apparatus for Use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink

Номер: US20120169398A1
Автор: Christopher N. Brindle, Clint L. Kemerling, Dylan J. Kelly, George P. Imthurn, Mark L. Burgener, Michael A. Stuber, Robert B. Welstand
Принадлежит: Peregrine Semiconductor Corp

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOT MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Подробнее
Номер записи: 3
04-10-2012 дата публикации

Integrated RF Front End with Stacked Transistor Switch

Номер: US20120252384A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. 1. An RF front-end circuit , comprising:a) an RF signal amplifier configured to receive a transmit signal having frequency content and phasing that is substantially suitable for transmitting, and to amplify such signal to establish an amplified transmit signal;b) an RF power amplifier (PA) circuit having an input node coupled to an input signal derived from the amplified transmit signal, the RF PA configured to amplify such input signal to generate a power amplified transmit signal having a power amplifier output characteristic impedance, and including a regulator circuit configured to controllably constrain an amplitude of the power amplified transmit signal;c) a matching, coupling and filtering network configured to condition the power amplified transmit signal by blocking DC components, changing the characteristic impedance of the signal, and rejecting unwanted frequencies, to establish an antenna-matched transmit signal;d) an antenna switch configured to controllably couple the antenna-matched transmit signal to an antenna connection node, or to decouple the antenna connection node from the transmit signal and couple the antenna connection ...

Подробнее
Номер записи: 4
06-12-2012 дата публикации

Method for enhancing soil growth using bio-char

Номер: US20120304719A1
Автор: Mark L. Jarand, Michael Cheiky, Ronald A. Sills
Принадлежит: Cool Planet Energy Systems Inc

A method is described for rendering char from a biomass fractionator apparatus (BMF char) suitable for addition to soil in high concentrations, the method relying on multiple processes comprising removing detrimental hydrocarbons from BMF char, removing adsorbed gases from BMF char, introducing microorganisms to the BMF char, and adjusting sail pH.

Подробнее
Номер записи: 5
30-05-2013 дата публикации

Method And System For Detecting And Removing EEG Artifacts

Номер: US20130138356A1
Автор: Mark L. Scheuer, Nicolas Nierenberg, Scott B. Wilson
Принадлежит: Persyst Development Corp

A method and system for detecting and removing EEG artifacts is disclosed herein. Each source of a plurality of sources for an EEG signal is separated for a selected artifact type. Each source of the plurality of sources is reconstituted into a recorded montage and an optimal reference montage for recognizing the selected artifact type of each source. The sources with artifacts are removed and the remaining sources are reconstituted into a filtered montage for the EEG signal.

Подробнее
Номер записи: 6
04-07-2013 дата публикации

Catalyst compositions for the polymerization of olefins

Номер: US20130172497A1
Автор: Mark L. Hlavinka, QING Yang, Youlu Yu
Принадлежит: Chevron Phillips Chemical Co LP

Catalyst compositions containing N,N-bis[2-hydroxidebenzyl]amine transition metal compounds are disclosed. Methods for making these transition metal compounds and for using such compounds in catalyst compositions for the polymerization of olefins also are provided.

Подробнее
Номер записи: 7
26-09-2013 дата публикации

Apparatus and method for axially transferring fluids to a plurality of components

Номер: US20130248029A1
Автор: James A. Raszkowski, James A. Redelman, Mark L. Anderson
Принадлежит: Individual

An apparatus for axially transferring fluid may comprise an elongated shaft defining a first fluid passageway axially therethrough and a second fluid passageway from an outer surface thereof to the first fluid passageway. An elongated tube member defines an outer surface that is received within the first fluid passageway and a third fluid passageway axially therethrough. A plurality of axial channels are defined between the tube member and the first fluid passageway or along the tube member separately from the third fluid passageway. At least one of the plurality of axial channels define a first opening near one end thereof that receives fluid from a source of fluid and a second opening axially spaced apart from the first opening and that aligns with the second fluid passageway such that fluid may be transferred by the at least one fluid passageway from the source of fluid through the second fluid passageway.

Подробнее
Номер записи: 8
07-11-2013 дата публикации

Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink

Номер: US20130293280A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. 1. An RF switch , comprising:a first RF port;a second RF port;a first switch transistor grouping coupled to the first RF port and to the second RF port and comprising a first plurality of switch NMOSFETs arranged in a stacked configuration;a first shunt transistor grouping coupled to the first RF port and to ground and comprising a first plurality of shunt NMOSFETs arranged in a stacked configuration,wherein at least one of the first plurality of shunt NMOSFETs comprises a first gate, a first source, a first drain, a first body, and a first accumulated charge sink (ACS) coupled to the first body,wherein a first ACS bias voltage is applied to the first ACS,wherein the first ACS is in electrical communication with the first body and is configured so that when the at least one shunt NMOSFET of the first plurality of shunt NMOSFETs is operated in an off-state (non-conducting state), the first ACS bias voltage is substantially negative with respect to ground to substantially prevent ...

Подробнее
Номер записи: 9
27-02-2014 дата публикации

Low Noise Charge Pump Method and Apparatus

Номер: US20140055194A1
Автор: Burgener Mark L., Cable James S., Kelly Dylan J.
Принадлежит: PEREGRINE SEMICONDUCTOR CORPORATION

A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures. 1a) a transfer capacitor;b) a plurality of transfer capacitor coupling switches, each switchable between a conducting state and a nonconducting state under control of at least one charge pump clock output; and i) circuitry configured as an active current limit to limit a rate of rise of voltage at the driver section output, and', 'ii) circuitry configured as an active current limit to limit a rate of fall of voltage at the driver section output;, 'c) a charge pump clock generating circuit including a ring oscillator comprising an odd number of not more than three inverting driver sections cascaded sequentially in a ring such that each driver section has an output coupled to a next driver section input, wherein a first driver section is next after a last driver section and one of the driver section outputs constitutes a particular charge pump clock output controlling at least one of the transfer capacitor coupling switches, and wherein each driver section includes'}d) wherein the plurality of transfer capacitor coupling switches are coupled to the transfer capacitor, and are controlled so as to couple the transfer capacitor to a voltage source during periodic first times, and to couple the transfer capacitor to ...

Подробнее
Номер записи: 10
03-04-2014 дата публикации

Catalyst Compositions Containing Transition Metal Complexes With Thiolate Ligands

Номер: US20140094577A1
Автор: Mark L. Hlavinka
Принадлежит: Chevron Phillips Chemical Co LP

The present invention discloses catalyst compositions employing transition metal complexes with a thiolate ligand. Methods for making these transition metal complexes and for using such compounds in catalyst compositions for the polymerization of olefins also are provided.

Подробнее
Номер записи: 11
04-01-2018 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20180006628A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. A filter module for providing a pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA); anda capacitor module coupled in parallel to the AWR, the capacitor module configured to modify the transduction of the electrical signal by the AWR.2. A filter module for providing a tunable pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA);a first capacitor module coupled in parallel to the AWR, the first capacitor module configured to modify the transduction of the electrical signal by the AWR; anda second capacitor module coupled in series to the AWR and the first capacitor module, the second capacitor module configured to modify the transduction of the electrical signal by the AWR.3. The filter module of claim 1 , wherein the capacitor modifies at least one of the AFA and RFA.4. The filter module of claim 2 , wherein the first capacitor module or the second capacitor module or a combination thereof modifies at least one of the RFA and AFA.5. The filter module of claim 1 , wherein the capacitor module is a variable capacitor.6. The filter module of claim 2 , wherein at least one of the first capacitor module and the second capacitor module are variable capacitors.7. A filter module for providing a switchable pass-band and a tunable rejection band claim 2 , the filter module comprising:an acoustic wave resonator (AWR), the AWR having a ...

Подробнее
Номер записи: 12
09-01-2020 дата публикации

Integrated RF Front End with Stacked Transistor Switch

Номер: US20200014417A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits. 1. A module comprising: at least one integrated RF Power Amplifier (PA) circuit; an input node to accept an input signal with respect to a reference voltage, the input node connected to a first gate of a first MOSFET, wherein a source of the first MOSFET is connected to the reference voltage;', 'one or more MOSFETs connected in series with the first MOSFET to form a transistor stack, wherein the first MOSFET comprises a bottom transistor of the transistor stack, and the one or more MOSFETs comprise intermediate transistors and/or a top transistor of the transistor stack, wherein the transistor stack is configured to control conduction between the reference voltage and an output drive node, and wherein the output drive node is connected to a drain of the top transistor of the transistor stack; and', 'one or more predominantly capacitive elements connected directly between a corresponding gate of the one or ...

Подробнее
Номер записи: 13
21-01-2016 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20160020750A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

Подробнее
Номер записи: 14
17-02-2022 дата публикации

Method for application of biochar in turf grass and landscaping environments

Номер: US20220048831A1
Автор: Brian Buege, Han Suk Kim, Mark L. Jarand, Neil Christopher Wahlgren, Ranko Bontchev, Richard W. Wilson, Timothy Alan THOMPSON, Vern S. Traxler
Принадлежит: Carbon Technology Holdings LLC

The present invention relates to a method for applying biochar to turf and landscape to allow the turf and landscape to be effectively maintained under reduced water and/or reduced fertilizer applications.

Подробнее
Номер записи: 15
30-01-2020 дата публикации

Method and apparatus for use in improving linearity of mosfets using an accumulated charge sink

Номер: US20200036377A1
Автор: Christopher N. Brindle, Clint L. Kemerling, Dylan J. Kelly, George IMTHURN, Mark L. Burgener, Michael A. Stuber, Robert B. Welstand
Принадлежит: PSemi Corp

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Подробнее
Номер записи: 16
30-01-2020 дата публикации

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USING AN ACCUMULATED CHARGE SINK

Номер: US20200036378A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. 1. (canceled)2. A method of operating a communication device including an RF module that further includes at least one integrated circuit chip , the method comprising:controlling a silicon on insulator (SOI) N-type metal oxide semiconductor (NMOS) field effect transistor (FET) stack to either an OFF state or an ON state, the SOI NMOS FET stack, comprising a plurality of NMOS FET transistors, being implemented on the at least one integrated circuit chip of the RF module; andelectrically biasing a body of at least one NMOS FET transistor of the plurality of NMOS FET transistors of the SOI NMOS FET stack with a bias voltage substantially more negative than ground during at least a portion of the OFF state of the at least one NMOS FET transistor.3. The method of claim 2 , wherein the method further comprises generating the bias voltage substantially more negative than ground on the at least one integrated circuit chip.4. The method of claim 2 , and further comprising:removing or ...

Подробнее
Номер записи: 17
21-02-2019 дата публикации

Switch Circuit and Method of Switching Radio Frequency Signals

Номер: US20190058470A1
Автор: James S. Cable, Mark L. Burgener
Принадлежит: PSemi Corp, RF Micro Devices Inc

An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

Подробнее
Номер записи: 18
01-03-2018 дата публикации

Switch Circuit and Method of Switching Radio Frequency Signals

Номер: US20180062645A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. 1. (canceled)2. An RF switching circuit comprising:(a) a switch transistor grouping having a first switch node and a second switch node.(b) a shunt transistor grouping having a first shunt node coupled with the second switch node and a second shunt node coupled with a reference voltage;(c) a control logic configured to output a first control signal and a second control signal; and(d) a negative voltage generator coupled with the control logic, the negative voltage generator being configured to generate a negative power supply voltage with respect to the reference voltage;wherein:(i) the switch transistor grouping has a control switch node configured to receive the first control signal;(ii) the shunt transistor grouping has a control shunt node configured to receive the second control signal; and(iii) the RF switching circuit is fabricated as a monolithic integrated circuit.3. The RF switching circuit of claim 2 , wherein the first control signal and the second control ...

Подробнее
Номер записи: 19
27-02-2020 дата публикации

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USING AN ACCUMULATED CHARGE SINK

Номер: US20200067504A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. 1. (canceled)2. A method of operating at least one integrated circuit chip , the method comprising:inputting an input RF signal and one or more control signals to the at least one integrated circuit chip;outputting an output RF signal from the at least one integrated circuit chip;controlling, based at least in part on the one or more control signals, a silicon on insulator (SOI) N-type metal oxide semiconductor (NMOS) field effect transistor (FET) stack to either an OFF state or an ON state, the SOI NMOS FET stack, comprising a plurality of NMOS FET transistors, being implemented in the at least one integrated circuit chip; andelectrically biasing, based at least in part on the one or more control signals, a body of at least one NMOS FET transistor of the plurality of NMOS FET transistors of the SOI NMOS FET stack with a bias voltage substantially more negative than ground during at least a portion of the OFF state of the at least one NMOS FET transistor.3. The method of claim 2 , ...

Подробнее
Номер записи: 20
23-03-2017 дата публикации

Method And System For Detecting And Removing EEG Artifacts

Номер: US20170079593A1
Автор: Mark L. Scheuer, Nicolas Nierenberg, Scott B. Wilson
Принадлежит: Persyst Development Corp

A method and system for detecting and removing EEG artifacts is disclosed herein. Each source of a plurality of sources for an EEG signal is separated for a selected artifact type. Each source of the plurality of sources is reconstituted into a recorded montage and an optimal reference montage for recognizing the selected artifact type of each source. The sources with artifacts are removed and the remaining sources are reconstituted into a filtered montage for the EEG signal.

Подробнее
Номер записи: 21
05-03-2020 дата публикации

SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS

Номер: US20200076427A1
Автор: Benton Robert H., Burgener Mark L., Cable James S.
Принадлежит:

A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression. 142.-. (canceled)43. An apparatus comprising:a communication device, wherein the communication device includes at least one integrated circuit chip comprising a silicon on insulator (SOI) substrate, wherein the SOI substrate comprises at least a thin film silicon layer less than 150 nm;wherein the at least one integrated circuit chip includes: an RF circuit, an integrated digital control logic circuit to provide one or more control signals to the RF circuit, and a negative voltage generator circuit that comprises a charge pump to generate a negative voltage with respect to a reference voltage;the RF circuit comprising: a switch transistor grouping ...

Подробнее
Номер записи: 22
05-03-2020 дата публикации

SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS

Номер: US20200076428A1
Автор: Benton Robert H., Burgener Mark L., Cable James S.
Принадлежит:

A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression. 142.-. (canceled)43. A method of operating an RF circuit in which at least one integrated circuit chip comprises the RF circuit , wherein the RF circuit includes a switch transistor grouping comprising a first plurality of N-type metal oxide semiconductor field effect transistors (NMOSFETs) arranged in a first stacked configuration , the switch transistor grouping via a switch transistor grouping control signal either to pass or to not pass an RF signal between a first RF node and a second RF node , the second RF node being coupled to the first RF node , and a shunt transistor grouping comprising a second plurality of NMOSFET transistors arranged ...

Подробнее
Номер записи: 23
22-03-2018 дата публикации

Method and Apparatus for use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink

Номер: US20180083614A1
Автор: Alexander Dribisnky, Christopher N. Brindle, Clint L. Kemerling, Dylan J. Kelly, George IMTHURN, Mark L. Burgener, Michael A. Stuber, Robert B. Welstand, Tae Youn Kim
Принадлежит: PSemi Corp

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Подробнее
Номер записи: 24
14-03-2019 дата публикации

Integrated RF Front End with Stacked Transistor Switch

Номер: US20190081655A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits. 1. A multiple-MOSFET stack circuit for controlling conduction between a drive output node Vdrive and a reference voltage node Vref under control of an input signal applied between an input signal node and Vref , the circuit comprising:{'sub': N', 'N', 'N', 'N', 'N, 'a. a series transistor stack of J MOSFETs M, N being an integer between 1 and J and J being an integer 2 or greater, each MOSFET Mhaving a source S, a gate Gand a drain D,'}{'sub': 1', '1, 'b. an input signal node connected to the gate Gof a signal-input MOSFET Mof the MOSFET stack;'}{'sub': N', '(N+1)', '(N+1), 'c. for 0 Подробнее

Номер записи: 25
25-03-2021 дата публикации

Method of treating or ameliorating metabolic disorders using binding proteins for gastric inhibitory peptide receptor (gipr) in combination with glp-1 agonists

Номер: US20210087286A1
Автор: Aiko Umeda, Darren L. BATES, David J. Lloyd, Donghui SHI, Irwin Chen, Mark L. Michaels, Pavel Bondarenko, Todd Hager, Xiaoshan MIN, Zhulun Wang
Принадлежит: AMGEN INC

Methods of treating metabolic diseases and disorders using an antigen binding protein specific for the GIPR polypeptide are provided. In various embodiments the metabolic disease or disorder is type 2 diabetes, obesity, dyslipidemia, elevated glucose levels, elevated insulin levels and diabetic nephropathy. In certain embodiments the antigen binding protein is administered in combination with a GLP-1 receptor agonist.

Подробнее
Номер записи: 26
19-06-2014 дата публикации

Method and Apparatus Improving Gate Oxide Reliability by Controlling Accumulated Charge

Номер: US20140167834A1
Автор: Brindle Christopher N., Burgener Mark L., Dribinsky Alexander, Imthurn George P., Kelly Dylan J., Kemerling Clint L., Kim Tae Youn, Stuber Michael A., Welstand Robert B.
Принадлежит: PEREGRINE SEMICONDUCTOR CORPORATION

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body. 1. A circuit , comprising:a) a semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) operating in an accumulated charge regime; andb) a means for accumulated charge control (ACC) operatively coupled to the SOI MOSFET, wherein the means for ACC comprises a control circuit operatively coupled to a gate of the SOI MOSFET, wherein the control circuit applies a voltage pulse to the gate that switches the SOI MOSFET from the accumulated charge regime to a non-accumulated charge regime for a selected interval.2. The circuit of claim 1 , wherein the SOI MOSFET comprises an N MOSFET.3. The circuit of claim 1 , wherein the SOI MOSFET comprises a P MOSFET.4. The circuit of claim 1 , wherein the SOI ...

Подробнее
Номер записи: 27
21-03-2019 дата публикации

Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink

Номер: US20190089348A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. 1. (canceled)2. An RF switch circuit for switching RF signals , comprising:(A) a first RF port;(B) a second RF port; and(C) a pass transistor grouping having a first node coupled to the first RF port and a second node coupled to the second RF port, the pass transistor grouping comprising one or more first accumulated charge control N-type MOSFETs (ACC N-MOSFETs); and [ (i) a first gate, a first drain, a first source and a first gate oxide layer, where the first gate oxide layer is positioned between the first gate and a first body; and', '(ii) a first accumulated charge sink (ACS) region connected to the first body;, '(a) each first ACC N-MOSFET of the one or more first ACC N-MOSFETs comprises, '(b) in a first pass state, the pass transistor grouping is configured to be enabled, there-by connecting the first RF port with the second RF port;', '(c) in a second pass state, the pass transistor grouping is configured to be disabled, thereby isolating the first RF port from the second ...

Подробнее
Номер записи: 28
26-06-2014 дата публикации

INTEGRATED RF FRONT END WITH STACKED TRANSISTOR SWITCH

Номер: US20140179249A1
Автор: Burgener Mark L., Cable James S.
Принадлежит: PEREGRINE SEMICONDUCTOR CORPORATION

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits. 1a) an RF signal amplifier adapted to receive a transmit signal having frequency content that is substantially suitable for transmitting, and to amplify such signal to establish an amplified transmit signal;b) an RF power amplifier (PA) circuit having an input node coupled to an input signal derivative from the amplified transmit signal, the RF PA configured to amplify such input signal to generate a power amplified transmit signal having a power amplifier output characteristic impedance, and including a regulator circuit configured to controllably constrain an amplitude of the power amplified transmit signal;c) a matching, coupling and filtering network configured to condition the power amplified transmit signal by blocking DC components, changing the characteristic impedance of the signal, and rejecting unwanted frequencies, to establish an antenna-matched transmit signal;d) an antenna switch configured ...

Подробнее
Номер записи: 29
26-06-2014 дата публикации

Switch Circuit and Method of Switching Radio Frequency Signals

Номер: US20140179374A1
Автор: Burgener Mark L., Cable James S.
Принадлежит: PEREGRINE SEMICONDUCTOR CORPORATION

An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. 1. A circuit , comprising:a) a first RF port configured to output or receive a first RF signal;b) a second RF port configured to output or receive a second RF signal;c) a switch transistor grouping having a first node coupled to the first RF port and a second node coupled to the second RF port, wherein the switch transistor grouping has a control node configured to be coupled to a first switch control signal (SW); andd) a shunt transistor grouping having a first node coupled to the first RF port and a second node coupled to ground, wherein the shunt transistor grouping has a control node configured to be coupled to a second switch control signal (SW_).2. The circuit of claim 1 , wherein the switch transistor grouping comprises a single MOSFET claim 1 , and wherein the shunt transistor grouping comprises a single MOSFET.3. The circuit of claim 1 , wherein the switch transistor grouping comprises a plurality of MOSFETs arranged in a stacked configuration claim 1 , and ...

Подробнее
Номер записи: 30
01-04-2021 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20210099151A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. (canceled)2. A tunable resonator module comprising a variable capacitor coupled in parallel with a resonator module including one or more resonators and one or more switches to switch in or switch out corresponding one or more resonators: [ [ i) is a function of a fixed resonant frequency of each resonators of the one or more resonators; and', 'ii) is to be modulated by closing and/or opening switches of the one or more switches to bypass and/or include resonators of the one or more resonators, and, 'a1) a passband of the tunable resonator module, 'a2) a stopband of the tunable resonator module is to be modulated by varying the variable capacitor; and/or, 'A) series configuration wherein, [ i) is a function of a fixed resonant frequency of each resonator of the one or more resonators; and', 'ii) is to be modulated by closing and/or opening switches of the one or more switches to bypass and/or include resonators of the one or more resonators;, 'b1) a stopband of the tunable resonator module, iii) is a function of the fixed anti-resonant frequency of each resonators of the one or more resonators, and', 'vi) is to be modulated by the variable capacitor., 'b2) a passband of the tunable resonator module], 'B) shunt configuration wherein], 'wherein the tunable resonator module is implementable in a3. The tunable resonator module of claim 2 , wherein the one or more switches are controlled by one or more switch control signals.4. A tunable resonator module system comprising a plurality of tunable resonator modules according to .5. The tunable resonator ...

Подробнее
Номер записи: 31
28-03-2019 дата публикации

Low Noise Charge Pump Method and Apparatus

Номер: US20190097612A1
Автор: Burgener Mark L., Cable James S., Kelly Dylan J.
Принадлежит:

A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures. 1. (canceled)2. A charge pump clock generating circuit configured to generate a clock signal for a capacitive charge pump comprising at least one transfer capacitor having an input terminal and an output terminal , and a plurality of transfer capacitor coupling switches , each coupled to the clock signal and to one of the input terminal or output terminal of a corresponding one of the at least one transfer capacitor , each transfer capacitor coupling switch being switchable between a conducting state and a non-conducting state under control of the coupled clock signal , the charge pump clock generating circuit including:(a) a ring oscillator comprising an odd number of inverting driver sections cascaded sequentially in a ring such that each driver section has an output coupled to a next driver section input, wherein a first driver section is next after a last driver section and the output of the last driver section constitutes the clock signal; and wherein the plurality of transfer capacitor coupling switches are controlled by the coupled clock signal so as to couple the input terminal of the corresponding transfer capacitor to a voltage source during periodic first times, and to couple the output terminal of ...

Подробнее
Номер записи: 32
23-04-2015 дата публикации

User Interface For Artifact Removal In An EEG

Номер: US20150112223A1
Автор: Mark L. Scheuer, Nicolas Nierenberg, Scott B. Wilson
Принадлежит: Persyst Development Corp

A method and system for a user interface for artifact removal in an EEG is disclosed herein. The invention allows an operator to select a plurality of artifacts to be automatically removed from an EEG recording using a user interface. The operator pushes a button on the user interface to apply a plurality of filters to remove the plurality of artifacts from the EEG and generate a clean EEG for viewing.

Подробнее
Номер записи: 33
21-04-2016 дата публикации

Compositions of low-k dielectric sols containing nonmetallic catalysts

Номер: US20160111275A1
Автор: Mark L.F. Phillips, Travis Savage
Принадлежит: SBA Materials Inc

A sol composition for producing a porous low-k dielectric material is provided. The composition can include at least one silicate ester, a polar solvent, water, an acid catalyst for silicate ester hydrolysis, an amphiphilic block copolymer surfactant, and a nonmetallic catalyst that reduces dielectric constant in the produced material. The composition can further include a metallic ion at a lower parts-per-million concentration than the nonmetallic catalyst, and/or the composition can further include a cosolvent. A method of preparing a thin film on a substrate using the sol composition is also provided.

Подробнее
Номер записи: 34
10-07-2014 дата публикации

Method And System To Calculate qEEG

Номер: US20140194768A1
Автор: Mark L. Scheuer, Nicolas Nierenberg, Scott B. Wilson
Принадлежит: Persyst Development Corp

A system and method for calculating a quantitative EEG is disclosed herein. The present invention achieves a level of artifact reduction that the QEEG is now practical on a continuous monitoring basis since artifact reduction is continuously applied to an EEG recording.

Подробнее
Номер записи: 35
05-05-2016 дата публикации

User Interface For Artifact Removal In An EEG

Номер: US20160120478A1
Автор: Mark L. Scheuer, Nicolas Nierenberg, Scott B. Wilson
Принадлежит: Persyst Development Corp

A method and system for a user interface for artifact removal in an EEG is disclosed herein. The invention allows an operator to select a plurality of artifacts to be automatically removed from an EEG recording using a user interface. The operator pushes a button on the user interface to apply a plurality of filters to remove the plurality of artifacts from the EEG and generate a clean EEG for viewing.

Подробнее
Номер записи: 36
09-06-2022 дата публикации

METHOD AND APPARATUS IMPROVING GATE OXIDE RELIABILITY BY CONTROLLING ACCUMULATED CHARGE

Номер: US20220181497A1
Автор: Brindle Christopher N., Burgener Mark L., Dribinsky Alexander, Imthurn George P., Kelly Dylan J., Kemerling Clint L., KIM Tae-Youn, Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body. 1a) an NMOSFET having a floating body, a gate, a source, a drain, and a gate oxide layer between the gate and the body, wherein, but for an accumulated charge control structure, accumulated charge accumulates within the body in a region proximate to the gate oxide when the NMOSFET is selectively biased to operate in an accumulated charge regime; andb) an accumulated charge control structure comprising an accumulated charge sink (ACS) coupled to the body of the NMOSFET;wherein when the NMOSFET is selectively biased to operate in the accumulated charge regime, an ACS bias voltage (VACS) sufficiently negative with respect to ground, the source, and the drain is applied to the ACS to reduce, remove, or otherwise control the ...

Подробнее
Номер записи: 37
27-04-2017 дата публикации

Level Shifter

Номер: US20170117883A1
Автор: Abesingha Buddhika, Burgener Mark L., Green Merlin, Reedy Ronald Eugene, Swonger James W.
Принадлежит:

Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors. 155.-. (canceled)56. A level shifter configured to control a high voltage device capable of withstanding a voltage higher than a first voltage (VIN) , comprising:{'b': 2', '2, 'a circuital arrangement comprising transistor devices, each transistor device configured to withstand a second voltage (Vdd) substantially lower than the first voltage, the circuital arrangement configured to operate between a first switching voltage (SW) and a second switching voltage (Vdd+SW);'}a first supply terminal of the circuital arrangement, configured to carry the first switching voltage, the first switching voltage switching between a reference voltage and the first voltage;a second supply terminal of the circuital arrangement, configured to carry the second switching voltage as a function of the first switching voltage, the second switching voltage substantially corresponding to a sum of the first switching voltage and the second voltage;an input terminal of the circuital arrangement, the input terminal configured to receive a first and a second input timing control signals for controlling the high voltage device, the first and second input timing control signals configured to be ...

Подробнее
Номер записи: 38
09-04-2020 дата публикации

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USING AN ACCUMULATED CHARGE SINK

Номер: US20200112305A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. 1. (canceled)2. A device comprising: at least one integrated circuit chip;the at least one integrated circuit chip including a plurality of N-type metal oxide semiconductor field effect transistors (NMOSFETs) arranged in a stack;wherein at least one NMOSFET transistor of the plurality includes a source, a gate, a drain and a body;wherein the at least one NMOSFET transistor is further included in an electrical configuration within the at least one integrated circuit chip, the electrical configuration to at least control the at least one NMOSFET transistor to either an ON state or an OFF state based at least on one or more control signals; andwherein the electrical configuration is at least further to electrically bias the body of the at least one NMOSFET transistor to a DC voltage level substantially more negative than ground at least in a portion of the OFF state of the at least one NMOSFET transistor.3. The device of claim 2 , wherein the electrical configuration claim 2 , at ...

Подробнее
Номер записи: 39
16-04-2020 дата публикации

Effects of catalyst concentration and solid activator on nickel-mediated olefin/carbon dioxide coupling to acrylates

Номер: US20200115309A1
Автор: Mark L. Hlavinka, Pasquale Iacono
Принадлежит: Chevron Phillips Chemical Co LP

This disclosure provides for routes of synthesis of acrylic acid and other α,β-unsaturated carboxylic acids and their salts, including catalytic methods. For example, there is provided a process for producing an α,β-unsaturated carboxylic acid or a salt thereof, the process comprising: (1) contacting in any order, a group 8-11 transition metal precursor, an olefin, carbon dioxide, a diluent, and a metal-treated chemically-modified solid oxide such as a sulfur oxoacid anion-modified solid oxide, a phosphorus oxoacid anion-modified solid oxide, or a halide ion-modified solid oxide, to provide a reaction mixture; and (2) applying reaction conditions to the reaction mixture suitable to produce the α,β-unsaturated carboxylic acid or the salt thereof. Methods of regenerating the metal-treated chemically-modified solid oxide are described.

Подробнее
Номер записи: 40
03-05-2018 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20180123563A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. A filter module for providing a pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA); anda capacitor module coupled in parallel to the AWR, the capacitor module configured to modify the transduction of the electrical signal by the AWR.2. A filter module for providing a tunable pass-band and a tunable rejection band , comprising:an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA);a first capacitor module coupled in parallel to the AWR, the first capacitor module configured to modify the transduction of the electrical signal by the AWR; anda second capacitor module coupled in series to the AWR and the first capacitor module, the second capacitor module configured to modify the transduction of the electrical signal by the AWR.3. The filter module of claim 1 , wherein the capacitor modifies at least one of the AFA and RFA.4. The filter module of claim 2 , wherein the first capacitor module or the second capacitor module or a combination thereof modifies at least one of the RFA and AFA.5. The filter module of claim 1 , wherein the capacitor module is a variable capacitor.6. The filter module of claim 2 , wherein at least one of the first capacitor module and the second capacitor module are variable capacitors.7. A filter module for providing a switchable pass-band and a tunable rejection band claim 2 , the filter module comprising:an acoustic wave resonator (AWR), the AWR having a ...

Подробнее
Номер записи: 41
10-05-2018 дата публикации

Dual Catalyst System for Producing LLDPE Copolymers with a Narrow Molecular Weight Distribution and Improved Processability

Номер: US20180127526A1
Автор: Chung Ching Tso, Deloris R. GAGAN, Mark L. Hlavinka, Randy S. Muninger, Yongwoo Inn
Принадлежит: Chevron Phillips Chemical Co LP

Disclosed herein are ethylene-based polymers generally characterized by a Mw ranging from 70,000 to 200,000 g/mol, a ratio of Mz/Mw ranging from 1.8 to 20, an IB parameter ranging from 0.92 to 1.05, and an ATREF profile characterized by one large peak. These polymers have the dart impact, tear strength, and optical properties of a metallocene-catalyzed LLDPE, but with improved processability, melt strength, and bubble stability, and can be used in blown film and other end-use applications.

Подробнее
Номер записи: 42
18-05-2017 дата публикации

Biochar suspended solution

Номер: US20170137332A1
Автор: Daren Einar DAUGAARD, Han Suk Kim, Mark L. Jarand, Michael William Metier, Timothy Alan THOMPSON
Принадлежит: Cool Planet Energy Systems Inc

A method is provided for producing a biochar solution. The method comprises the steps of collecting biochar particles, dispersing the biochar particles in a liquid solution and adding a stabilizing agent to keep the biochar in flowable suspension. The stabilizing agent may be added to the liquid solution or to the biochar prior to placing the biochar in solution.

Подробнее
Номер записи: 43
03-06-2021 дата публикации

SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS

Номер: US20210167773A1
Автор: Benton Robert H., Burgener Mark L., Cable James S.
Принадлежит:

A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression. 142-. (canceled)43. A method of fabricating an RF switch circuit comprising:fabricating an integrated circuit (IC) that includes the RF switch circuit;wherein the fabricating includes forming at least a plurality of respective N-type metal oxide semiconductor field effect transistors (NMOSFETs) in a silicon layer over a substrate and further includes forming metal oxide semiconductor field effect transistors in the silicon layer for a negative voltage generator comprising a charge pump and for a digital control logic circuit;wherein the fabricating further includes fabricating one or more layers of metallization over the silicon layer;wherein the ...

Подробнее
Номер записи: 44
16-06-2016 дата публикации

Novel Polymer Compositions and Methods of Making and Using Same

Номер: US20160168290A1
Автор: Mark L. Hlavinka, Paul J. DesLauriers, QING Yang, William B. Beaulieu
Принадлежит: Chevron Phillips Chemical Co LP

A polymer reactor-blend comprising at least a first component having a polydispersity index of greater than about 20 and is present in an amount of from about 1 wt. % to about 99 wt. % based on the total weight of the polymer and a second component having a polydispersity index of less than about 20 and is present in an amount of from about 1 wt. % to about 99 wt. % based on the total weight of the polymer wherein a molecular weight distribution of the second component lies within a molecular weight distribution of the first component.

Подробнее
Номер записи: 45
14-05-2020 дата публикации

Switch circuit and method of switching radio frequency signals

Номер: US20200153430A1
Автор: James S. Cable, Mark L. Burgener, Robert H. Benton
Принадлежит: PSemi Corp

A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

Подробнее
Номер записи: 46
24-06-2021 дата публикации

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USING AN ACCUMULATED CHARGE SINK

Номер: US20210194478A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. 1. (canceled)2. A method of fabricating at least one N-type metal oxide semiconductor field effect transistor (NMOSFET) comprising:fabricating an integrated circuit (IC) that includes the at least one NMOSFET, the at least one NMOSFET being fabricated over a silicon on insulator (SOI) substrate;wherein the fabricating includes forming a source, a drain, a gate and a body for the at least one NMOSFET;wherein the fabricating further includes fabricating the at least one NMOSFET in an electrical configuration of the IC, the electrical configuration fabricated at least to control the NMOSFET to either an OFF state or an ON state, the electrical configuration further fabricated at least to electrically bias the body at least in a portion of the OFF state of the at least one NMOSFET to have a DC voltage level substantially more negative than a lowest voltage level of the following: ground, a DC voltage level of the source, and a DC voltage level of the drain.3. The method of claim 2 , ...

Подробнее
Номер записи: 47
16-06-2016 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20160173057A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. An improvement to an unmatched impedance in a system between an input load and an output load , the improvement including:an acoustic wave module (AWD) coupled between the input load and output load,the AWD operating characteristics reducing the impedance mismatch between the input load and the output load.2. The improvement to an unmatched impedance system of claim 1 , the AWD operating characteristics further desirably filtering the signal produced by the input load.3. The improvement to an unmatched impedance system of claim 1 , the input load producing a radio frequency (RF) signal.4. The improvement to an unmatched impedance system of claim 1 , wherein the AWD is serially coupled between the input load and the output load.5. The improvement to an unmatched impedance system of claim 1 , the AWD operating characteristics reducing the impedance mismatch between the input load and the output load about a limited range of frequencies.6. The improvement to an unmatched impedance system of claim 1 , the AWD operating characteristics including a resonant frequency and an anti-resonant frequency and the AWD reducing the impedance mismatch between the input load and the output load about the resonant frequency.7. The improvement to an unmatched impedance system of claim 6 , wherein the AWD operating characteristics reduces the real and imaginary impedance mismatch between the input load and the output load.8. The improvement to an unmatched impedance system of claim 1 , further including one of a pre-impedance matching module (IMM) coupled between the ...

Подробнее
Номер записи: 48
29-09-2022 дата публикации

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USING AN ACCUMULATED CHARGE SINK

Номер: US20220311432A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FIT performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. 1. A method comprising:controlling a first switch circuit to set the first switch circuit to be in either a first state or a second state, wherein the first switch circuit comprises a first transistor; andelectrically biasing a body of the first transistor with a bias signal during at least a portion of a duration when the first switch circuit is in the second state to control accumulated charge in the body.2. The method of claim 1 , wherein the bias signal comprises a bias voltage that is substantially more negative than ground.3. The method of claim 1 , wherein the accumulated charge is associated with carriers having a polarity opposite a polarity of carriers in a drain and a source of the first transistor when the first transistor is operated in an on state.4. The method of claim 1 , further comprising selectively connecting claim 1 , by the first switch circuit claim 1 , a first port to a second port based on a state of the first switch circuit.5. The method of claim 4 , ...

Подробнее
Номер записи: 49
09-07-2015 дата публикации

Chromium (III) Catalyst Systems With Activator-Supports

Номер: US20150191554A1
Автор: Kathy S. Collins, Mark L. Hlavinka, Max P. McDaniel
Принадлежит: Chevron Phillips Chemical Co LP

Methods for preparing supported chromium catalysts containing a chromium (III) compound and an activator-support are disclosed. These supported chromium catalysts can be used in catalyst compositions for the polymerization of olefins to produce polymers having low levels of long chain branching, and with greater sensitivity to the presence of hydrogen during polymerization.

Подробнее
Номер записи: 50
30-06-2016 дата публикации

Low Noise Charge Pump Method and Apparatus

Номер: US20160191022A1
Автор: Dylan J. Kelly, James S. Cable, Mark L. Burgener
Принадлежит: Peregrine Semiconductor Corp

A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

Подробнее
Номер записи: 51
30-06-2016 дата публикации

Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink

Номер: US20160191040A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. 1a) an NMOSFET having a floating body, a gate, a source, a drain and a gate oxide layer between the gate and the body, wherein the NMOSFET is selectively biased to operate in an accumulated charge regime, and wherein, but for an accumulated charge control structure, accumulated charge accumulates within the body in a region proximate to the gate oxide when the NMOSFET is biased to operate in the accumulated charge regime; andb) the accumulated charge control structure comprising an accumulated charge sink (ACS) coupled to the body of the NMOSFET, wherein when the NMOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS to remove or otherwise control the accumulated charge;. An accumulated charge control (ACC) NMOSFET (ACC NMOSFET), adapted to process RF signals, and adapted to control nonlinear response of RF signals processed by the ACC NMOSFET, comprising: This application is a continuation application of co-pending and commonly ...

Подробнее
Номер записи: 52
30-06-2016 дата публикации

Switch Circuit and Method of Switching Radio Frequency Signals

Номер: US20160191051A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. 1(a) a first port configured to receive a first RF signal;(b) a second port configured to receive a second RF signal;(c) an RF common port;(d) a first switch transistor grouping having a first node coupled to the first port and a second node coupled to the RF common port, wherein the first switch transistor grouping has a control node configured to receive a switch control signal (SW);(e) a second switch transistor grouping having a first node coupled to the second port and a second node coupled to the RF common port, wherein the second switch transistor grouping has a control node configured to receive an inverse (SW_) of the switch control signal (SW);(f) a first shunt transistor grouping having a first node coupled to the second port and a second node coupled to ground, wherein the first shunt transistor grouping has a control node configured to receive the switch control signal (SW); and(g) a second shunt transistor grouping having a first node coupled to the first ...

Подробнее
Номер записи: 53
16-10-2014 дата публикации

Integrated RF Front End with Stacked Transistor Switch

Номер: US20140306767A1
Автор: Burgener Mark L., Cable James S.
Принадлежит: PEREGRINE SEMICONDUCTOR CORPORATION

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits. 1a) an input node to accept an input signal with respect to a reference voltage Vref, coupled to a gate G1 of a first insulated-gate FEET M1;b) a plurality of additional insulated-gate FETs M2 to Mn having a same polarity as M1 and coupled in series with M1 to form a control circuit configured to control conduction between the reference voltage and an output drive node, wherein FETs M2 to Mn are each enslaved to M1; andc) an output coupling capacitor coupling the output drive node to an output load node.. An integrated RF Power Amplifier (PA) circuit, comprising: This is a continuation of copending and commonly assigned U.S. patent application Ser. No. 12/903,848 filed Oct. 13, 2010 and entitled “Integrated RF Front End with Stacked Transistor Switch”, which is a divisional of and commonly assigned U.S. patent application Ser. No. 11/501,125 filed Aug. 7, 2006 and entitled “Integrated RF Front End with ...

Подробнее
Номер записи: 54
11-08-2016 дата публикации

Methods for the Production of Alpha,Beta-Unsaturated Carboxylic Acids and Salts Thereof

Номер: US20160229782A1
Автор: Mark L. Hlavinka, Max P. McDaniel, Pasquale Iacono
Принадлежит: Chevron Phillips Chemical Co LP

Processes for producing an α,β-unsaturated carboxylic acid, such as acrylic acid, or a salt thereof, using treated solid oxides are disclosed. The treated solid oxides can be calcined solid oxides, metal-treated solid oxides, or metal-treated chemically-modified solid oxides, illustrative examples of which can include sodium-treated alumina, calcium-treated alumina, zinc-treated alumina, sodium-treated sulfated alumina, sodium-treated fluorided silica-coated alumina, and similar materials.

Подробнее
Номер записи: 55
30-10-2014 дата публикации

Use of Metallocene Compounds for Cancer Treatment

Номер: US20140323437A1
Автор: Mandi Michelle Murph, Mark L. Hlavinka, QING Yang
Принадлежит: Chevron Phillips Chemical Co LP

Metallocene compounds and pharmaceutical compositions containing these metallocene compounds are disclosed and described. Methods of treating cancer employing such metallocene compounds and pharmaceutical compositions also are provided.

Подробнее
Номер записи: 56
16-08-2018 дата публикации

Bispecific-fc molecules

Номер: US20180230220A1
Автор: Luis G. Borges, Mark L. Michaels, Patrick A. Baeuerle, WEI Yan
Принадлежит: AMGEN INC

Described herein is a bispecific molecule containing an Fc polypeptide chain and immunoglobulin variable regions. Also provided are pharmaceutical formulations comprising such molecules, nucleic acids encoding such molecules, host cells containing such nucleic acids, methods of making such molecules, and methods of using such molecules.

Подробнее
Номер записи: 57
17-08-2017 дата публикации

Method and Apparatus Improving Gate Oxide Reliability by Controlling Accumulated Charge

Номер: US20170236946A1
Автор: Brindle Christopher N., Burgener Mark L., Dribinsky Alexander, Imthurn George P., Kelly Dylan J., Kemerling Clint L., Kim Tae Youn, Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body. 1a) an NMOSFET having a floating body, a gate, a source, a drain, and a gate oxide layer between the gate and the body, wherein, but for an accumulated charge control structure, accumulated charge accumulates within the body in a region proximate to the gate oxide when the NMOSFET is selectively biased to operate in an accumulated charge regime; andb) an accumulated charge control structure comprising an accumulated charge sink (ACS) coupled to the body of the NMOSFET;wherein when the NMOSFET is selectively biased to operate in the accumulated charge regime, an ACS bias voltage (VACS) sufficiently negative with respect to ground, the source, and the drain is applied to the ACS to reduce, remove, or otherwise control the ...

Подробнее
Номер записи: 58
17-08-2017 дата публикации

Integrated RF Front End with Stacked Transistor Switch

Номер: US20170237462A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.

Подробнее
Номер записи: 59
23-07-2020 дата публикации

Heater bundle for adaptive control and method of reducing current leakage

Номер: US20200232677A1
Автор: Louis P. Steinhauser, Mark D. EVERLY, Mark L. G. Hoven, Michael W. Ruhr, Richard T. Williams
Принадлежит: Watlow Electric Manufacturing Co

A heater system includes a heater bundle. The heater bundle includes a plurality of heater assemblies. Each heater assembly includes a plurality of heater units and an insulating material, and each heater unit defines at least one independently controlled heating zone. The heater bundle includes power conductors electrically connected to each of the independently controlled heating zones in each of the heater units. The heater bundle includes a power supply device configured to modulate power to each of the independently controlled heater zones of the heater units through the power conductors. A voltage is selectively supplied to each of the independently controlled heating zones such that a reduced number of independently controlled heating zones receives the voltage at a time or at least a subset of the independently controlled heating zones receive a reduced voltage at all times.

Подробнее
Номер записи: 60
20-11-2014 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20140340173A1
Автор: Burgener Mark L., Cable James S.
Принадлежит: PEREGRINE SEMICONDUCTOR CORPORATION

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. An impedance matched system , including:an input load;an output load; andan impedance matching module (IMM) coupled between the input load and output load, the IMM including an acoustic wave module (AWM),wherein the IMM modifies the impedance between the input load and the output load.2. The impedance matched system of claim 1 , the IMM further filtering the signal produced by the input load.3. The impedance matched system of claim 1 , the input load producing a radio frequency (RF) signal.4. The impedance matched system of claim 3 , the output load including an RF antenna.5. The impedance matched system of claim 1 , the IMM modifying the impedance between the input load and the output load about a limited range of frequencies.6. The impedance matched system of claim 1 , the AWM having a resonate frequency and an anti-resonate frequency and the IMM modifying the impedance between the input load and the output load about the AWM resonate frequency.7. The impedance matched system of claim 6 , wherein the IMM modifies the real and imaginary impedance between the input load and the output load.8. The impedance matched system of claim 1 , the IMM further including one of a pre-IMM coupled between the input load and the AWM and a post-IMM coupled between the AWM and the output load claim 1 , the one of a pre-IMM and the post-IMM including an active element.9. The impedance matched system of claim 8 , wherein the AWM filter has a resonate frequency and an anti-resonate frequency and the combination of the AWM and one of a pre-IMM and the post-IMM modifies ...

Подробнее
Номер записи: 61
30-07-2020 дата публикации

Chromium (III) Catalyst Systems With Activator-Supports

Номер: US20200239605A1
Автор: Kathy S. CLEAR, Mark L. Hlavinka, Max P. McDaniel
Принадлежит: Chevron Phillips Chemical Co LP

Methods for preparing supported chromium catalysts containing a chromium (III) compound and an activator-support are disclosed. These supported chromium catalysts can be used in catalyst compositions for the polymerization of olefins to produce polymers having low levels of long chain branching, and with greater sensitivity to the presence of hydrogen during polymerization.

Подробнее
Номер записи: 62
22-09-2016 дата публикации

Level Shifter

Номер: US20160277008A1
Автор: Abesingha Buddhika, Burgener Mark L., Green Merlin, Reedy Ronald Eugene, Swonger James W.
Принадлежит:

Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors. 1. A level shifter configured to control a high voltage device capable of withstanding a voltage higher than a first voltage , comprising:a circuital arrangement comprising transistor devices, each transistor device configured to withstand a second voltage substantially lower than the first voltage;a first supply terminal of the circuital arrangement, configured to carry a first switching voltage, the first switching voltage switching between a reference voltage and a voltage higher than the first voltage;a second supply terminal of the circuital arrangement, configured to carry a second switching voltage as a function of the first switching voltage, the second switching voltage substantially corresponding to a sum of the first switching voltage and the second voltage;an input terminal of the circuital arrangement, the input terminal configured to receive input timing control signals for controlling the high voltage device, the timing control signals configured to be coupled to the transistor devices of the circuital arrangement by way of a non-galvanic coupling; andan output terminal of the circuital arrangement, the output terminal configured to provide an output ...

Подробнее
Номер записи: 63
13-08-2020 дата публикации

Low Noise Charge Pump Method and Apparatus

Номер: US20200259484A1
Автор: Burgener Mark L., Cable James S., Kelly Dylan J.
Принадлежит:

A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures. 2. The invention of claim 1 , wherein the resulting di/dt of charging and discharging currents is limited by limiting a speed with which the plurality of transfer capacitor coupling switches are turned on or off.3. The invention of claim 1 , wherein each of the plurality of transfer capacitor coupling switches has a transconductance claim 1 , and limiting the rate of voltage change dv/dt limits claim 1 , in conjunction with the transconductance of each of the plurality of transfer capacitor coupling switches claim 1 , the resulting di/dt of charging and discharging currents in the capacitive charge pump.4. An RF switch including:(a) at least one switching device requiring a gate bias voltage; (1) at least one transfer capacitor having an input terminal and an output terminal; and', '(2) a plurality of transfer capacitor coupling switches, each coupled to one of the input terminal or output terminal of a corresponding one of the at least one transfer capacitor, each transfer capacitor coupling switch being switchable between a conducting state and a non-conducting state; and, '(b) a capacitive charge pump coupled to at least one of the at least one switching device and configured to output the gate bias voltage ...

Подробнее
Номер записи: 64
10-09-2020 дата публикации

Dual-purpose heater and fluid flow measurement system

Номер: US20200284179A1
Автор: Cal Swanson, David P. Culbertson, Jemes N. PRADUN, Jeremy J. QUANDT, Jeremy OHSE, Mark D. EVERLY, Mark L. G. Hoven, Sanhong Zhang
Принадлежит: Watlow Electric Manufacturing Co

A control system for use in a fluid flow application includes a heater and a control device. The heater has at least one resistive heating element and the heater is operable to heat fluid. The control device determines at least one flow characteristic of a fluid flow based on a heat loss of the at least one resistive heating element and determines a mass flow rate of the fluid based on the at least one flow characteristic and a property of the at least one resistive heating element. And the property of the at least one resistive heating element includes a change in resistance of the at least one resistive heating element under a given heat flux density.

Подробнее
Номер записи: 65
17-09-2020 дата публикации

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USING AN ACCUMULATED CHARGE SINK

Номер: US20200295751A1
Автор: Brindle Christopher N., Burgener Mark L., Imthurn George, Kelly Dylan J., Kemerling Clint L., Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Подробнее
Номер записи: 66
22-10-2020 дата публикации

METHOD AND APPARATUS IMPROVING GATE OXIDE RELIABILITY BY CONTROLLING ACCUMULATED CHARGE

Номер: US20200335633A1
Автор: Brindle Christopher N., Burgener Mark L., Dribinsky Alexander, Imthurn George P., Kelly Dylan J., Kemerling Clint L., KIM Tae-Youn, Stuber Michael A., Welstand Robert B.
Принадлежит:

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body. 139-. (canceled)40. An RF module comprising: at least one integrated circuit chip;the at least one integrated circuit chip included in the RF module and further including at least one field effect transistor, the at least one field effect transistor including a gate, a drain, a source, and a body;wherein the at least one field effect transistor comprises an N-type metal oxide semiconductor (NMOS) field effect transistor in which the thickness of the gate oxide is less than approximately 8.2 nm;wherein, during at least a portion of an off state, the body of the at least one field effect transistor is to be electrically biased to have a voltage level substantially more negative than the lowest voltage level of the following: ...

Подробнее
Номер записи: 67
31-12-2015 дата публикации

Higher Density Polyolefins With Improved Stress Crack Resistance

Номер: US20150376312A1
Автор: Ashish Sukhadia, Errun Ding, Guylaine St. Jean, Lili Cui, Mark L. Hlavinka, Paul DesLauriers, QING Yang, Richard M. Buck, Yongwoo Inn
Принадлежит: Chevron Phillips Chemical Co LP

Disclosed herein are polymerization processes for the production of olefin polymers. These polymerization processes can employ a catalyst system containing two or three metallocene components, resulting in ethylene-based copolymers that can have a medium density and improved stress crack resistance.

Подробнее
Номер записи: 68
26-11-2020 дата публикации

Integrated RF Front End with Stacked Transistor Switch

Номер: US20200373962A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits. 1 an input node to accept an input signal with respect to a reference voltage, the input node connected to a first gate of a first MOSFET, wherein a source of the first MOSFET is connected to the reference voltage;', 'one or more MOSFETs connected in series with the first MOSFET to form a transistor stack, wherein the first MOSFET comprises a bottom transistor of the transistor stack, and the one or more MOSFETs comprise intermediate transistors and/or a top transistor of the transistor stack, wherein the transistor stack is configured to control conduction between the reference voltage and an output drive node, and wherein the output drive node is connected to a drain of the top transistor of the transistor stack; and', 'one or more predominantly capacitive elements connected directly between a corresponding gate of the one or more MOSFETs and the reference voltage., 'wherein the at least one integrated RF ...

Подробнее
Номер записи: 69
17-12-2020 дата публикации

Techniques for sentiment analysis of data using a convolutional neural network and a co-occurrence network

Номер: US20200394478A1
Автор: Mark L. Kreider, Michael Malak
Принадлежит: Oracle International Corp

Techniques are provided for performing sentiment analysis on words in a first data set. An example embodiment includes generating a word embedding model including a first plurality of features. A value indicating sentiment for the words in the first data set can be determined using a convolutional neural network (CNN). A second plurality of features are generated based on bigrams identified in the data set. The bigrams can be generated using a co-occurrence graph. The model is updated to include the second plurality of features, and sentiment analysis can be performed on a second data set using the updated model.

Подробнее
Номер записи: 70
26-12-2019 дата публикации

Method, System, and Apparatus for Resonator Circuits and Modulating Resonators

Номер: US20190393853A1
Автор: Burgener Mark L., Cable James S.
Принадлежит:

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed. 1. A filter module , including: a first acoustic wave resonator (AWR);', {'b': 1', '1, 'a first switch coupled serially to the first AWR wherein the first AWR is inoperative when the first switch is opened and active when the first switch is closed, the first AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA);'}, 'a second AWR;', 'a second switch coupled serially to the second AWR,', (a) the second AWR is inoperative when the second switch is opened and active when the second switch is closed;', '(b) a combination of the first switch and first AWR is coupled in parallel to a combination of the second switch and second AWR;', {'b': 2', '2', '1', '2, '(c) the second AWR has a resonate frequency (RFA) and an anti-resonate frequency (AFA), wherein the RFA and RFA are offset in frequency; and'}], 'wherein, {'b': 1', '2, 'a first variable capacitor coupled in parallel with the combination of the first switch and the first AWR, the first variable capacitor configured to vary at least one of the AFA and the AFA thereby configuring the first switchable pass-band and tunable rejection band filter module; and'}, [{'b': 3', '3, 'a third AWR, the third AWR coupled to the first AWR and the second AWR, the third AWR configured to filter electrical signals and having a resonate frequency (RFA) and an anti-resonate frequency (AFA); and'}, {'b': '3', 'a second variable capacitor configured to vary the AFA thereby configuring the tunable filter module.'}], 'a tunable filter module, comprising], 'a first switchable pass-band and tunable rejection ...

Подробнее
Номер записи: 71
01-03-2016 дата публикации

Polymers with improved toughness and ESCR for large-part blow molding applications

Номер: US9273170B2
Автор: Daniel G. Hert, John R. Rathman, Mark L. Hlavinka, QING Yang, Steven J. Secora, William M. Whitte, Yongwoo Inn
Принадлежит: Chevron Phillips Chemical Co LP

Disclosed herein are ethylene-based polymers having a density greater than 0.945 g/cm 3 , a high load melt index less than 25 g/10 min, a peak molecular weight ranging from 52,000 to 132,000 g/mol, and an environmental stress crack resistance of at least 250 hours. These polymers have the processability of chromium-based resins, but with improved impact strength and stress crack resistance, and can be used in large-part blow molding applications.

Подробнее
Номер записи: 72
18-05-2010 дата публикации

Low noise charge pump method and apparatus

Номер: US7719343B2
Автор: Dylan Kelly, James S. Cable, Mark L. Burgener
Принадлежит: Peregrine Semiconductor Corp

A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

Подробнее
Номер записи: 73
19-06-2018 дата публикации

Dual catalyst system for producing LLDPE copolymers with a narrow molecular weight distribution and improved processability

Номер: US10000594B2
Автор: Chung Ching Tso, Deloris R. GAGAN, Mark L. Hlavinka, Randy S. Muninger, Yongwoo Inn
Принадлежит: Chevron Phillips Chemical Co LP

Disclosed herein are ethylene-based polymers generally characterized by a Mw ranging from 70,000 to 200,000 g/mol, a ratio of Mz/Mw ranging from 1.8 to 20, an IB parameter ranging from 0.92 to 1.05, and an ATREF profile characterized by one large peak. These polymers have the dart impact, tear strength, and optical properties of a metallocene-catalyzed LLDPE, but with improved processability, melt strength, and bubble stability, and can be used in blown film and other end-use applications.

Подробнее
Номер записи: 74
13-07-2021 дата публикации

Dual catalyst system for producing LLDPE copolymers with a narrow molecular weight distribution and improved processability

Номер: US11059921B2
Автор: Chung Ching Tso, Deloris R. GAGAN, Mark L. Hlavinka, Randy S. Muninger, Yongwoo Inn
Принадлежит: Chevron Phillips Chemical Co LP

Disclosed herein are ethylene-based polymers generally characterized by a Mw ranging from 70,000 to 200,000 g/mol, a ratio of Mz/Mw ranging from 1.8 to 20, an IB parameter ranging from 0.92 to 1.05, and an ATREF profile characterized by one large peak. These polymers have the dart impact, tear strength, and optical properties of a metallocene-catalyzed LLDPE, but with improved processability, melt strength, and bubble stability, and can be used in blown film and other end-use applications.

Подробнее
Номер записи: 75
15-10-2019 дата публикации

Dual catalyst system for producing LLDPE copolymers with a narrow molecular weight distribution and improved processability

Номер: US10442881B2
Автор: Chung Ching Tso, Deloris R. GAGAN, Mark L. Hlavinka, Randy S. Muninger, Yongwoo Inn
Принадлежит: Chevron Phillips Chemical Co LP

Disclosed herein are ethylene-based polymers generally characterized by a Mw ranging from 70,000 to 200,000 g/mol, a ratio of Mz/Mw ranging from 1.8 to 20, an 1B parameter ranging from 0.92 to 1.05, and an ATREF profile characterized by one large peak. These polymers have the dart impact, tear strength, and optical properties of a metallocene-catalyzed LLDPE, but with improved processability, melt strength, and bubble stability, and can be used in blown film and other end-use applications.

Подробнее
Номер записи: 76
04-11-2014 дата публикации

Catalyst compositions and methods of making and using same

Номер: US8877672B2
Автор: Mark L. Hlavinka, QING Yang
Принадлежит: Chevron Phillips Chemical Co LP

A catalyst composition comprising (i) a metal salt complex prepared from an imine phenol compound characterized by Structure 1: wherein O and N represent oxygen and nitrogen respectively; R comprises a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; R 2 and R 3 are each independently hydrogen, a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; and Q is a donor group; and (ii) a metallocene complex.

Подробнее
Номер записи: 77
25-11-2014 дата публикации

Catalyst compositions and methods of making and using same

Номер: US8895679B2
Автор: Mark L. Hlavinka
Принадлежит: Chevron Phillips Chemical Co LP

An imine phenol compound having Structure I: wherein O and N represent oxygen and nitrogen respectively; R comprises a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; R 2 and R 3 can each independently be hydrogen, a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; and Q is a donor group. A method comprising contacting a catalyst composition with a monomer under conditions suitable for the formation of a polymer wherein the catalyst composition comprises a metal salt complex of an imine (bis)phenolate compound, a solid oxide, and an optional metal alkyl and wherein the metal salt complex of an imine (bis)phenolate compound has Structure XIV where M is titanium, zirconium, or hafnium; OE t2 is ethoxide, R comprises a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; and R 2 comprises hydrogen, a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group.

Подробнее
Номер записи: 78
20-01-2015 дата публикации

Catalyst compositions and methods of making and using same

Номер: US8937139B2
Автор: Guylaine St. Jean, Mark L. Hlavinka, QING Yang
Принадлежит: Chevron Phillips Chemical Co LP

An ethylene polymer having (i) a density defined by equation (1) ρ> a−b Log M   (1) where ρ is a density of the polymer in g/cc, log M is a log weight average molecular weight of the polymer, a is about 1.0407, and b is about 0.0145; and (ii) a polydispersity index of greater than about 5.

Подробнее
Номер записи: 79
19-05-2015 дата публикации

Polymer compositions and methods of making and using same

Номер: US9034991B2
Автор: Mark L. Hlavinka, Paul J. DesLauriers, QING Yang, William B. Beaulieu
Принадлежит: Chevron Phillips Chemical Co LP

A polymer reactor-blend comprising at least a first component having a polydispersity index of greater than about 20 and is present in an amount of from about 1 wt. % to about 99 wt. % based on the total weight of the polymer and a second component having a polydispersity index of less than about 20 and is present in an amount of from about 1 wt. % to about 99 wt. % based on the total weight of the polymer wherein a molecular weight distribution of the second component lies within a molecular weight distribution of the first component.

Подробнее
Номер записи: 80
15-03-2016 дата публикации

Polymer compositions having improved barrier properties

Номер: US9284391B2
Автор: Brooke A. GILL, Deloris R. GAGAN, Guylaine St. Jean, Mark L. Hlavinka, QING Yang
Принадлежит: Chevron Phillips Chemical Co LP

A polymer having a melt index of from about 0.5 g/10 min to about 4.0 g/10 min and a density of equal to or greater than 0.96 g/cc which when formed into a 1-mil film displays a moisture vapor transmission rate ranging from equal to or greater than about 0 to equal to or about 20% greater than X where X=k 1 {−61.95377+39.52785(M z /M w )−8.16974(M z /M w ) 2 +0.55114(M z /M w ) 3 }+k 2 {−114.01555(τ)+37.68575(M z /M w )(τ)−2.89177(M z /M w ) 2 (τ)}+k 3 {120.37572(τ) 2 −25.91177(M z /M w )(τ) 2 }+k 4 {18.03254(τ) 3 } when M w is from about 100 kg/mol to about 180 kg/moL; M z is from about 300 kg/mol to about 1000 kg/mol; τ is from about 0.01 S to about 0.35 s; k 1 is 1 g/100 in 2 ·day; k 2 is 1 g/100 in 2 ·day·s; k 3 is 1 g/100 in 2 ·day·s 2 ; and k 4 is 1 g/100 in 2 ·day·s 3 .

Подробнее
Номер записи: 81
02-05-2017 дата публикации

Polymer compositions and methods of making and using same

Номер: US9637573B2
Автор: Mark L. Hlavinka, Paul J. DesLauriers, QING Yang, William B. Beaulieu
Принадлежит: Chevron Phillips Chemical Co LP

A polymer reactor-blend comprising at least a first component having a polydispersity index of greater than about 20 and is present in an amount of from about 1 wt. % to about 99 wt. % based on the total weight of the polymer and a second component having a polydispersity index of less than about 20 and is present in an amount of from about 1 wt. % to about 99 wt. % based on the total weight of the polymer wherein a molecular weight distribution of the second component lies within a molecular weight distribution of the first component.

Подробнее
Номер записи: 82
19-07-2016 дата публикации

Polymer compositions and methods of making and using same

Номер: US9394385B2
Автор: Mark L. Hlavinka, Paul J. DesLauriers, QING Yang, William B. Beaulieu
Принадлежит: Chevron Phillips Chemical Co LP

A polymer reactor-blend comprising at least a first component having a polydispersity index of greater than about 20 and is present in an amount of from about 1 wt. % to about 99 wt. % based on the total weight of the polymer and a second component having a polydispersity index of less than about 20 and is present in an amount of from about 1 wt. % to about 99 wt. % based on the total weight of the polymer wherein a molecular weight distribution of the second component lies within a molecular weight distribution of the first component.

Подробнее
Номер записи: 83
13-09-2012 дата публикации

Catalyst compositions containing transition metal complexes with thiolate ligands

Номер: WO2012122349A1
Автор: Mark L HLAVINKA
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

The present invention discloses catalyst compositions employing transition metal complexes with a thiolate ligand. Methods for making these transition metal complexes and for using such compounds in catalyst compositions for the polymerization of olefins also are provided.

Подробнее
Номер записи: 84
07-03-2013 дата публикации

Polymer compositions having improved barrier properties

Номер: WO2013033690A1
Автор: Brooke A GILL, Deloris R GAGAN, Guylaine St Jean, Mark L HLAVINKA, QING Yang
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

A polymer having a melt index of from about 0.5 g/10 min to about 4.0 g/10 min and a density of equal to or greater than 0.96 g/cc which when formed into a 1-mil film displays a moisture vapor transmission rate ranging from equal to or greater than about 0 to equal to or about 20% greater than X where X = k 1 {-61.95377 + 39.52785(M Z /M W ) - 8.16974(M Z /M W ) 2 + 0.55114(M Z /M W ) 3 } + k 2 {-114.01555( Ƭ ) + 37.68575(M Z /M W )( Ƭ ) - 2.89177(M Z /M W ) 2 ( Ƭ )} + k 3 { 120.37572( Ƭ ) 2 - 25.91177(M Z /M W )( Ƭ ) 2 } + k 4 { 18.03254( Ƭ ) 3 } when M W is from about 100 kg/mol to about 180 kg/moL; M Z is from about 300 kg/mol to about 1000 kg/mol; Ƭ is from about 0.01S to about 0.35s; k 1 is 1 g/100in 2 ∙day; k 2 is 1 g/100in 2 ∙day∙s; k 3 is 1 g/100in 2 ∙day∙s 2 ; and k 4 is 1 g/100in 2 ∙day∙s 3 .

Подробнее
Номер записи: 85
07-03-2013 дата публикации

Polymer compositions having improved barrier properties

Номер: WO2013033689A1
Автор: Brooke A GILL, Guylaine St Jean, Mark L HLAVINKA, QING Yang
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

A unimodal polymer having a melt index of from about 0.5 g/10 min to about 4 g/10 min, a density of equal to or greater than about 0.945 g/cc which when formed into a film displays a moisture vapor transmission rate of less than about 0.55 g-mil/100 in 2 in 24 hours as determined in accordance with ASTM F 1249. A unimodal polymer having a melt index of from about 0.5 g/10 min to about 4 g/10 min, a density of equal to or greater than about 0.945 g/cc which when formed into a film displays a moisture vapor transmission rate of less than about 0.44 g-mil/100 in 2 in 24 hours as determined in accordance with ASTM F 1249.

Подробнее
Номер записи: 86
04-07-2013 дата публикации

Catalyst compositions containing n, n-bis [2-hydroxidebenzyl] amine transition metal compounds for the polymerization of olefins

Номер: WO2013101476A1
Автор: Mark L HLAVINKA, QING Yang, Youlu Yu
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

Catalyst compositions containing N,N-bis[2-hydroxidebenzyl]amine transition metal compounds are disclosed. Methods for making these transition metal compounds and for using such compounds in catalyst compositions for the polymerization of olefins also are provided. wherein: M is Ti, Zr, or Hf; X 1 and X 2 independently are a monoanionic ligand; each R B and R C independently is a halide, a C 1 to C 36 hydrocarbyl group, a C 1 to C 36 halogenated hydrocarbyl group, a C 1 to C 36 hydrocarboxy group, or a C 1 to C 36 hydrocarbylsilyl group, wherein p and q independently are 0, 1, 2, 3, or 4; and R A is a C 1 to C 36 hydrocarbyl group or C 1 to C 36 halogenated hydrocarbyl group.

Подробнее
Номер записи: 87
01-05-2014 дата публикации

Novel catalyst compositions and method of making and using the same for the polymerizsation of olefin, high density polyethylene

Номер: WO2014066618A1
Автор: Guylaine St Jean, Mark L HLAVINKA, QING Yang
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

An ethylene polymer having (i) a density defined by equation (1) ρ > a - b Log M (1) where ρ is a density of the polymer in g/cc, log M is a log weight average molecular weight of the polymer, a is about 1.0407, and b is about 0.0145; and (ii) a polydispersity index of greater than about 5.

Подробнее
Номер записи: 88
01-05-2014 дата публикации

Novel catalyst compositions and methods of making and using same

Номер: WO2014066602A1
Автор: Mark L HLAVINKA
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

An imine phenol compound having Structure I: wherein O and N represent oxygen and nitrogen respectively; R comprises a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; R 2 and R 3 can each independently be hydrogen, a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; and Q is a donor group. A method comprising contacting a catalyst composition with a monomer under conditions suitable for the formation of a polymer wherein the catalyst composition comprises a metal salt complex of an imine (bis) phenolate compound, a solid oxide, and an optional metal alkyl and wherein the metal salt complex of an imine (bis) phenolate compound has Structure XIV where M is titanium, zirconium, or hafnium; OE t2 is ethoxide, R comprises a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; and R 2 comprises hydrogen, a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group.

Подробнее
Номер записи: 89
07-08-2014 дата публикации

Novel polymer compositions and methods of making and using same

Номер: WO2014120540A1
Автор: Mark L HLAVINKA, Paul J. DesLauriers, QING Yang, William B. Beaulieu
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

A polymer reactor-blend comprising at least a first component having a polydispersity index of greater than about 20 and is present in an amount of from about 1 wt.% to about 99 wt.% based on the total weight of the polymer and a second component having a polydispersity index of less than about 20 and is present in an amount of from about 1 wt.% to about 99 wt.% based on the total weight of the polymer wherein a molecular weight distribution of the second component lies within a molecular weight distribution of the first component.

Подробнее
Номер записи: 90
07-08-2014 дата публикации

Catalyst compositions and methods of making and using same

Номер: WO2014120548A1
Автор: Mark L HLAVINKA, QING Yang
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

A catalyst composition comprising (i) a metal salt complex of an imine bis(phenol) compound characterized by Structure (1). Wherein O and N represent oxygen and nitrogen respectively; R comprises a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; R 2 and R 3 can each independently be hydrogen, a halogen, a hydrocarbyl group, or a substituted hydrocarbyl group; and Q is a donor group; and (ii) a metallocene complex.

Подробнее
Номер записи: 91
12-03-2015 дата публикации

Higher density polyolefins with improved stress crack resistance

Номер: WO2015034816A2
Автор: Ashish M Sukhadia, Errun Ding, Guylaine St Jean, Lili Cui, Mark L HLAVINKA, Paul J. DesLauriers, QING Yang, Richard M Buck, Yongwoo Inn
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

Disclosed herein are polymerization processes for the production of olefin polymers. These polymerization processes can employ a catalyst system containing two or three metallocene components, resulting in ethylene-based copolymers that can have a medium density and improved stress crack resistance.

Подробнее
Номер записи: 92
16-07-2015 дата публикации

Chromium (iii) catalyst systems with activator-supports

Номер: WO2015105738A2
Автор: Kathy S Collins, Mark L HLAVINKA, Max P Mcdaniel
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

Methods for preparing supported chromium catalysts containing a chromium (III) compound and an activator-support are disclosed. These supported chromium catalysts can be used in catalyst compositions for the polymerization of olefins to produce polymers having low levels of long chain branching, and with greater sensitivity to the presence of hydrogen during polymerization.

Подробнее
Номер записи: 93
17-09-2015 дата публикации

Polymers with improved toughness and escr for large-part blow molding applications

Номер: WO2015138673A1
Автор: Daniel G HERT, John R RATHMAN, Mark L HLAVINKA, QING Yang, Steven J. Secora, William M WHITTE, Yongwoo Inn
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

Disclosed herein are ethylene-based polymers having a density greater than 0.945 g/cm3, a high load melt index less than 25 g/10 min, a peak molecular weight ranging from 52,000 to 132,000 g/mol, and an environmental stress crack resistance of at least 250 hours. These polymers have the processability of chromium-based resins, but with improved impact strength and stress crack resistance, and can be used in large-part blow molding applications.

Подробнее
Номер записи: 94
12-11-2015 дата публикации

High performance moisture barrier films at lower densities

Номер: WO2015171588A1
Автор: Deloris R GAGAN, Guylaine St Jean, Mark L HLAVINKA, QING Yang
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

A metallocene-catalyzed polyethylene copolymer having a zero shear viscosity ( η ° ) of from about 1X10 2 Pa-s to about 5X10 3 Pa-s and a ratio of a z-average molecular weight to a number average molecular weight (M z /M n ) of from about 4 to about 15, and when tested in accordance with ASTM F1249 displays a moisture vapor transmission rate of less than or equal to about 0.9 g-mil/100 in 2 /day. A metallocene-catalyzed polyethylene copolymer which when tested in accordance with ASTM F1249 has a moisture vapor transmission rate (MVTR) that is decreased by at least 5% when compared to an MVTR determined in accordance with ASTM F1249 of an otherwise similar metallocene-catalyzed polyethylene homopolymer.

Подробнее
Номер записи: 95
19-11-2015 дата публикации

Synthesis of aryl coupled bis phenoxides and their use in olefin polymerization catalyst systems with activator-supports

Номер: WO2015175636A1
Автор: Mark L HLAVINKA
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

Disclosed herein are methods of making bis(phenol) ligand compounds and transition metal bis(phenolate) compounds. The transition metal bis(phenolate) compounds can be used as components in catalyst systems for the polymerization of olefins.

Подробнее
Номер записи: 96
15-11-2016 дата публикации

Polymers with improved ESCR for blow molding applications

Номер: US9493589B1
Автор: Jeff F Greco, Jim B ASKEW, Mark L. Hlavinka, QING Yang, Vivek Rohatgi
Принадлежит: Chevron Phillips Chemical Co LP

Disclosed herein are ethylene-based polymers generally characterized by a density greater than 0.954 g/cm 3 , high load melt index ranging from 10 to 45 g/10 min, a ratio of high load melt index to melt index ranging from 175 to 600, a rheological slope parameter ranging from 0.15 to 0.30, and an ESCR in 10% igepal exceeding 800 hours. These polymers have the beneficial processability and die swell features of chromium-based resins, but with improved stiffness and stress crack resistance, and can be used in blow molding and other end-use applications.

Подробнее
Номер записи: 97
16-03-2017 дата публикации

Methods for controlling die swell in dual catalyst olefin polymerization systems

Номер: WO2017044376A1
Автор: Jeffrey F GRECO, Jim B ASKEW, Mark L HLAVINKA, QING Yang, Vivek ROHATI
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

Methods for controlling the die swell of an olefin polymer produced using a dual catalyst system are disclosed. The die swell of the olefin polymer can be increased or decreased as a function of the catalyst weight ratio and the reactant molar ratio used during the olefin polymerization process.

Подробнее
Номер записи: 98
24-10-2019 дата публикации

Methods of preparing a catalyst utilizing hydrated reagents

Номер: WO2019204076A1
Автор: Eric D. SCHWERDTFEGER, Jeremy M. Praetorius, Kathy S. CLEAR, Mark L. Hlavinka, Max P. McDaniel, Mitchell D. Refvik
Принадлежит: CHEVRON PHILLIPS CHEMICAL COMPANY LP

A pre-catalyst composition comprising a) a silica support comprising silica wherein an amount of silica ranges from about 70 wt. % to about 95 wt. % based upon a total weight of the silica support, b) a chromium-containing compound wherein an amount of chromium ranges from about 0.1 wt. % to about 5 wt. % based upon the amount of silica, c) a titanium-containing compound wherein an amount of titanium ranges from about 0.1 wt. % to about 20 wt. % based upon the amount of silica, d) a carboxylic acid wherein an equivalent molar ratio of titanium-containing compound to carboxylic acid ranges from about 1:1 to about 1:10, and e) a nitrogen-containing compound with a molecular formula containing at least one nitrogen atom wherein an equivalent molar ratio of titanium-containing compound to nitrogen-containing compound ranges from about 1:0.5 to about 1:10.

Подробнее
Номер записи: 99
28-07-2020 дата публикации

Methods of preparing a catalyst utilizing hydrated reagents

Номер: US10722874B2
Автор: Eric D. SCHWERDTFEGER, Jeremy M. Praetorius, Kathy S. CLEAR, Mark L. Hlavinka, Max P. McDaniel, Mitchell D. Refvik
Принадлежит: Chevron Phillips Chemical Co LP

A method comprising a) contacting a solvent, a carboxylic acid, and a peroxide-containing compound to form an acidic mixture wherein a weight ratio of solvent to carboxylic acid in the acidic mixture is from about 1:1 to about 100:1; b) contacting a titanium-containing compound and the acidic mixture to form a solubilized titanium mixture wherein an equivalent molar ratio of titanium-containing compound to carboxylic acid in the solubilized titanium mixture is from about 1:1 to about 1:4 and an equivalent molar ratio of titanium-containing compound to peroxide-containing compound in the solubilized titanium mixture is from about 1:1 to about 1:20; and c) contacting a chromium-silica support comprising from about 0.1 wt. % to about 20 wt. % water and the solubilized titanium mixture to form an addition product and drying the addition product by heating to a temperature in a range of from about 50° C. to about 150° C. and maintaining the temperature in the range of from about 50° C. to about 150° C. for a time period of from about 30 minutes to about 6 hours to form a pre-catalyst.

Подробнее
Номер записи: 100