METHOD FOR PREPARING ANODE MATERIAL FOR LITHIUM-ION BATTERIES

A method for preparing an anode material for lithium-ion batteries, the method including: (1) mixing a raw residue from a biomass gasifier and an aqueous solution including a surfactant to yield a mixed solution, grinding the mixed solution to disperse the raw residue, washing the mixed solution using water to remove the surfactant, leaching the mixed solution, to yield a first intermediate residue; (2) adding hydrochloric acid to the first intermediate residue, stirring to remove impurities, filtering, and washing the residue to be neutral, to yield a second intermediate residue; (3) adding polyethyleneimine and ethanol to the second intermediate residue, shaking, washing away the polyethyleneimine and the ethanol, filtering, to yield a third intermediate residue; and (4) adding nitric acid to the third intermediate residue, fully stirring, washing away the nitric acid, filtering and drying, to yield the anode material for lithium-ion batteries. 1. A method for preparing an anode material for lithium-ion batteries , the method comprising:(1) mixing a raw residue from a biomass gasifier and an aqueous solution comprising a surfactant to yield a mixed solution, grinding the mixed solution to disperse the raw residue, washing the mixed solution using water to remove the surfactant, leaching the mixed solution, to yield a first intermediate residue;(2) adding hydrochloric acid to the first intermediate residue obtained in (1), stirring to remove impurities, filtering, and washing the residue to be neutral, to yield a second intermediate residue;(3) adding polyethyleneimine and ethanol to the second intermediate residue obtained in (2), shaking to disperse the second intermediate residue, washing away the polyethyleneimine and the ethanol, filtering, to yield a third intermediate residue; and(4) adding a 55-70% (by mass) aqueous solution of nitric acid to the third intermediate residue obtained in (3), stirring at a temperature of between 35° C. and 45° C., washing away ...

Method for preparing biomass-based polymer emulsion

A method for preparing biomass-based polymer emulsion. The method includes: 1) preparing cardanol-based polymerizable emulsifier; 2) preparing castor oil-based polyurethane prepolymer; and 3) preparing biomass-based polymer emulsion.

METHOD FOR PREPARING NANO SILICA AND NANO CALCIUM CARBONATE USING RICE HULL ASH AND FLUE GAS

A method for preparing nano silica and nano calcium carbonate using rice hull ash and flue gas. The method includes: 1) adding rice hull ash to a sodium hydroxide solution, to yield a first mixed solution; stirring and heating the first mixed solution; then filtering the first mixed solution to yield a first filtrate; 2) adding the first filtrate to a reaction still, and diluting the first filtrate; adding polyethylene glycol as a dispersant to the reaction solution; introducing flue gas to the reaction solution; filtering the reaction mixture to yield a first filter cake and a second filtrate; washing the first filter cake to a neural pH, slurrying and drying the first filter cake to yield nano silica; and 3) mixing the second filtrate and a washing solution collected from 2); adding a calcium hydroxide solution to the reaction still, to yield nano calcium carbonate. 1. A method for preparing nano silica and nano calcium carbonate using rice hull ash and flue gas , the method comprising:{'sub': 2,', '2, 'sup': '2', '1) adding rice hull ash from a biomass power plant to a sodium hydroxide solution having a concentration of between 10 and 20 wt. %, to yield a first mixed solution; stirring and heating the first mixed solution to a temperature of between 95 and 100° C. and allowing the first mixed solution to react for 3 to 4 hrs; then filtering the first mixed solution to yield a first filtrate; wherein the rice hull ash comprises between 80 and 90 wt. % of SiOa BET specific surface area thereof is between 40 and 100 m/g, and a crystal structure of SiOis amorphous;'}2) adding the first filtrate of 1) to a reaction still, and diluting the first filtrate using water so that a mass percentage concentration of silica of sodium silicate in a diluted reaction solution to be between 8 and 15%; heating the reaction still to 60 to 80° C., and adding polyethylene glycol as a dispersant of a non-ionic surfactant to the reaction solution to form a reaction mixture, wherein a ...

Method for producing nano silicon dioxide and nano calcium carbonate by using rice hull ash and flue gas of biomass power plant

Provided is a method for producing nano silicon dioxide and nano calcium carbonate by using rice hull ash and flue gas of a biomass power plant. The method comprises: adding the rice hull ash into a sodium hydroxide solution, fully reacting at the temperature of 95-100 °C for 3-4 hours, and performing filtration; adding water into a filtrate to dilute the filtrate, controlling sodium silicate in a system to be 8-15 wt% in silicon dioxide, heating to 60-80 °C, adding a dispersing agent, continuously feeding the flue gas of the biomass power plant under a normal pressure condition, stirring to react for 2-4 hours to obtain the nano silicon dioxide; mixing the filtrate and a washing liquid, adding a calcium hydroxide solution at the temperature of 50-70 °C, and stirring to react for 0.5-2 hours to obtain the nano calcium carbonate. The particle sizes of the silicon dioxide product and the calcium carbonate product which are obtained by the method are extremely small and can both reach the nano level.

Method for preparing negative electrode material of lithium-ion battery by using biomass gasification furnace filter residue

PROCEDURE FOR PREPARING BIOMASS BASED POLYMER EMULSION

Method for preparing negative electrode material of lithium-ion battery by using biomass gasification furnace filter residue

Disclosed is a method for preparing a negative electrode material of a lithium-ion battery by using a biomass gasification furnace filter residue. The method comprises: 1) mixing a biomass gasification furnace filter residue with a surface active agent and grinding the mixture, grinding the mixture adequately, removing the surface active agent in a water washing manner, carrying out the suction filtration, and obtaining the filter residue for standby use; 2) placing hydrochloric acid into the filter residue obtained in step 1), adequately removing impurities, and filtering and washing the filter residue to be neutral for standby use; 3) placing the filter residue obtained in step 2) into a mixed solution of polyethyleneimine and ethanol, carrying out the oscillation, washing the polyethyleneimine and the ethanol after the adequate oscillation, performing the filtering, and obtaining the filter residue for standby use; and 4) placing nitric acid having a mass fraction of 55% to 70% into the filter residue obtained in step 3), adequately stirring at the temperature of 35 to 45 degrees centigrade, carrying out the modification, washing the nitric acid, and filtering and drying to obtain a negative electrode material of a lithium-ion battery. The negative electrode material of the lithium-ion battery, which has a high capacity, a high primary efficiency and good cycling performance and is safe and pollution-free, is obtained; the process is simple in process flow, low in cost and applicable to the expanded production.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Conductive structure interconnects

Provided are devices with conductive contacts and methods for forming such devices. A method includes forming a lower conductive contact in a dielectric material and over a structure, wherein the lower conductive contact has opposite sidewalls that extend to and terminate at a top surface. The method also includes separating an upper portion of each sidewall from the dielectric material and locating a barrier material between the upper portion of each sidewall and the dielectric material. Further, the method includes forming an upper conductive contact over the lower conductive contact.

Semiconductor device structure and methods of forming the same

Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed in a PFET region and a second source/drain region disposed in an NFET region. The second source/drain region comprises a dipole region. The structure further includes a first silicide layer disposed on and in contact with the first source/drain region, a second silicide layer disposed on and in contact with the first silicide layer, and a third silicide layer disposed on and in contact with the dipole region of the second source/drain region. The first, second, and third silicide layers include different materials. The structure further includes a first conductive feature disposed over the first source/drain region, a second conductive feature disposed over the second source/drain region, and an interconnect structure disposed on the first and second conductive features.

Semiconductor device including conductive nitride feature and method of making the semiconductor device

A semiconductor device includes a semiconductor structure, a conductive nitride feature, a third dielectric feature, and a conductive line feature. The semiconductor structure includes a substrate, two source/drain regions disposed in the substrate, a first dielectric feature disposed over the substrate, a gate structure disposed in the first dielectric feature and between the source/drain regions, a second dielectric feature disposed over the first dielectric feature, and a contact feature disposed in the second dielectric feature and being connected to at least one of the source/drain regions and the gate structure. The conductive nitride feature includes metal nitride or alloy nitride, is disposed in the second dielectric feature, and is connected to the contact feature. The third dielectric feature is disposed over the second dielectric feature. The conductive feature is disposed in the third dielectric feature and is connected to the conductive nitride feature opposite to the contact feature.

Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device includes forming a conductive feature in a first dielectric layer; forming a second dielectric layer on the first dielectric layer; forming a trench that penetrates through the second dielectric layer, and terminates at the conductive feature; forming a contact layer in the trench and on the conductive feature; etching back the contact layer to form a first via contact feature in the trench, the first via contact feature being electrically connected to the conductive feature; and forming a second via contact feature on the first via contact feature in the trench.

Semiconductor Devices with a Nitrided Capping Layer

The present disclosure describes a semiconductor device with a nitrided capping layer and methods for forming the same. One method includes forming a first conductive structure in a first dielectric layer on a substrate, depositing a second dielectric layer on the first conductive structure and the first dielectric layer, and forming an opening in the second dielectric layer to expose the first conductive structure and a portion of the first dielectric layer. The method further includes forming a nitrided layer on a top portion of the first conductive structure, a top portion of the portion of the first dielectric layer, sidewalls of the opening, and a top portion of the second dielectric layer, and forming a second conductive structure in the opening, where the second conductive structure is in contact with the nitrided layer.

Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device

A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.