15-05-2014 дата публикации
Номер: US20140131795A1
An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain. 1. A transistor , comprising:a semiconductor substrate;a channel region recessed into said semiconductor substrate;a gate located over said channel region;a source/drain including a doped region adjacent said channel region;an oppositely doped well under said channel region and said doped region of said source/drain; anda channel extension, within said oppositely doped well, under at least a portion of said channel region.2. The transistor as recited in wherein said channel extension extends under a portion of said doped region of said source/drain by a channel extension length.3. The transistor as recited in wherein said channel extension is of like type to said oppositely doped well.4. The transistor as recited in wherein said channel extension has a doping concentration profile greater than a doping concentration profile of said oppositely doped well.5. The transistor as recited in wherein said channel extension has a doping concentration greater than a doping concentration profile of said channel region.6. The transistor as recited in further comprising another source/drain including a doped region adjacent an opposing side of said channel region.7. The transistor as recited in wherein said channel extension extends under at least a portion of said doped region of said ...
Подробнее