AUTOMATIC DRIVING SIMULATOR AND MAP GENERATION METHOD FOR AUTOMATIC DRIVING SIMULATOR

The present invention generates, with good precision from a simulation map, an automatic driving map data necessary for automatic driving control. Provided is an automatic driving simulator for verifying the functions of an automatic driving ECU, the automatic driving simulator being configured from: a real time simulator that is provided with a model for simulating each function of portions besides the automatic driving ECU of a self-driving vehicle equipped with the automatic driving control ECU, and that provides signals from the model to the automatic driving ECU; and a computer that controls the model in the real time simulator. The computer provides signals from the model in the real time simulator to the automatic driving ECU, causes a self-driving vehicle to travel on virtual roads, acquires, from the model in the real time simulator, log data of when the self-driving vehicle was caused to automatically drive on virtual roads, and produces map data for automatic driving from the ...

VEHICLE CONTROL DEVICE

Provided is a vehicle control device that can more reliably avoid collisions between an obstacle and a vehicle, or reduce collision damage, by estimating the type and risk of an obstacle more accurately than a conventional vehicle control device. This vehicle control device 100 is mounted in a vehicle V, and comprises a three-dimensional object information generation unit 121, a damage degree map generation unit 122, and a travel control unit 123. The three-dimensional object information generation unit 121 detects objects around the vehicle V and generates three-dimensional object information on the basis of external information outputted from an external sensor V1 mounted on the vehicle V. The damage degree map generation unit 122 generates, on the basis of generated external information, information about a plurality of divided regions in which a designated region including the object is divided in each of the front-rear direction and the height direction, and sets a damage degree that ...

VEHICLE POSITION DETECTION DEVICE, AND PARAMETER SET CREATION DEVICE FOR VEHICLE POSITION DETECTION

In order to reduce improper vehicle behavior during autonomous driving, a vehicle position detection device is provided with: a satellite-derived position calculation unit 15 for receiving a satellite-derived position signal of a vehicle and calculating the satellite-derived position of the vehicle; an autonomous navigation position calculation unit 16 for receiving an autonomous navigation position signal of the vehicle and calculating the autonomous navigation position of the vehicle; a distance calculation unit 17 for calculating the position deviation between the satellite-derived position and the autonomous navigation position; a storage unit for storing a plurality of parameter sets in which a plurality of threshold values, which allow position deviations for each vehicle speed, is set for each vehicle characteristic; a selection unit 14 for selecting a parameter set corresponding to a vehicle characteristic from a plurality of parameter sets 11-13 stored in the storage unit; and ...

VEHICLE CONTROL DEVICE AND VEHICLE CONTROL METHOD

The present invention enables an autonomously driven vehicle to safely traverse a road having a narrow traversable width without coming face-to-face with an oncoming vehicle. A driving control unit, which controls the driving of a host vehicle on the basis of an external sensor which detects the environment external to the host vehicle as external information and an autonomous driving map in which a planned travel route of the host vehicle is set: detects an alternating traversing area in front of the host vehicle from the external information; sets, on the autonomous driving map, a plurality of spaces before and after the alternating traversing area as prescribed regions where the host vehicle or an oncoming vehicle can temporarily stop; determines spaces where the host vehicle and the oncoming vehicle can pass each other on the basis of the arrangement state of the spaces; sets the space where passing is possible that is closest to the host vehicle before the alternating traversing area ...

ENCAPSULATING SHEET, PRODUCTION METHOD THEREOF, OPTICAL SEMICONDUCTOR DEVICE AND ENCAPSULATED OPTICAL SEMICONDUCTOR ELEMENT

An encapsulating sheet formed from an encapsulating composition including: a silicone resin composition containing alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst; and an inorganic filler having a refraction of 1.50 or more and 1.60 or less and an average particle size of 10 μm or more and 50 μm or less. In the average composition formula (1) and the average composition formula (2), at least one of R 2 and R 3 includes a phenyl group. A product produced by reaction of the silicone resin composition is represented by the average composition formula (3) below. R 5 e SiO (4-e)/2   average composition formula (3): The phenyl group content in R 5 of the average composition formula (3) is 30 mol % or more and 55 mol % or less.

ENCAPSULATING SHEET

An encapsulating sheet, for encapsulating an optical semiconductor element, includes an embedding layer for embedding the optical semiconductor element and a gas barrier layer provided at one side in a thickness direction of the embedding layer, having a thickness of 50 μm or more and 1,000 μm or less, and for suppressing the passing of a gas in the thickness direction. 1. An encapsulating sheet , for encapsulating an optical semiconductor element , comprising:an embedding layer for embedding the optical semiconductor element anda gas barrier layer provided at one side in a thickness direction of the embedding layer, having a thickness of 50 μm or more and 1,000 μm or less, and for suppressing the passing of a gas in the thickness direction.2. The encapsulating sheet according to claim 1 , whereinthe ratio of the thickness of the gas barrier layer to that of the embedding layer is 0.10 or more and 1.00 or less.3. The encapsulating sheet according to claim 1 , whereinthe embedding layer is formed from a thermosetting resin in a B-stage state.4. The encapsulating sheet according to claim 1 , whereinthe gas barrier layer is exposed toward the one side in the thickness direction.5. The encapsulating sheet according to claim 1 , whereina covering layer that is disposed at the one side in the thickness direction with respect to the embedding layer and is exposed toward the one side in the thickness direction is further included andthe gas barrier layer is interposed between the embedding layer and the covering layer.6. The encapsulating sheet according to claim 5 , whereinthe covering layer is formed from a thermosetting resin in a C-stage state. The present application claims priority from Japanese Patent Application No. 2012-282903 filed on Dec. 26, 2012, the contents of which are hereby incorporated by reference into this application.1. Field of the InventionThe present invention relates to an encapsulating sheet, to be specific, to an encapsulating sheet used for ...

Manufacturing method for semiconductor device

A manufacturing method includes the step of forming a diced semiconductor wafer ( 10 ) including semiconductor chips ( 11 ) from a semiconductor wafer (W) typically on a dicing tape (T 1 ). The diced semiconductor wafer ( 10 ) on the dicing tape (T 1 ) is laminated with a sinter-bonding sheet ( 20 ). The semiconductor chips ( 11 ) each with a sinter-bonding material layer ( 21 ) derived from the sinter-bonding sheet ( 20 ) are picked up typically from the dicing tape (T 1 ). The semiconductor chips ( 11 ) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer ( 21 ) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers ( 21 ) lying between the temporarily secured semiconductor chips ( 11 ) and the substrate, to bond the semiconductor chips ( 11 ) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

THERMOSETTING SHEET AND DICING DIE BONDING FILM

A thermosetting sheet according to the present invention includes: a thermosetting resin; a volatile component; and conductive particles, in which a weight reduction ratio Wobtained when the thermosetting sheet under a nitrogen gas flow of 200 mL/min is heated from room temperature to 100° C. at a temperature rising rate of 10° C./min and then maintained at 100° C. for 30 minutes is 0.5 mass % or less, and a weight reduction ratio Wobtained when the thermosetting sheet under a nitrogen gas flow of 200 mL/min is heated from 100° C. to 200° C. at a temperature rising rate of 10° C./min and then maintained at 200° C. for 30 minutes is 2 mass % or more. 1. A thermosetting sheet comprising:a thermosetting resin;a volatile component; andconductive particles, wherein{'sub': '1', 'a weight reduction ratio Wobtained when the thermosetting sheet under a nitrogen gas flow of 200 mL/min is heated from room temperature to 100° C. at a temperature rising rate of 10° C./min and then maintained at 100° C. for 30 minutes is 0.5 mass % or less, and'}{'sub': '2', 'a weight reduction ratio Wobtained when the thermosetting sheet under a nitrogen gas flow of 200 mL/min is heated from 100° C. to 200° C. at a temperature rising rate of 10° C./min and then maintained at 200° C. for 30 minutes is 2 mass % or more.'}2. The thermosetting sheet according to claim 1 , whereinthe volatile component comprises one or more hydroxy groups and has a boiling point of 250° C. or more.3. The thermosetting sheet according to claim 1 , whereinthe volatile component is a terpene compound.4. The thermosetting sheet according to claim 1 , whereinthe conductive particles are sinterable metal particles.5. The thermosetting sheet according to claim 4 , whereinthe sinterable metal particles comprise aggregated nanoparticles in which sinterable metal nanoparticles are aggregated, anda mass ratio of the aggregated nanoparticles to a total mass of the sinterable metal particles is 50 mass % or more and 90 mass % or ...

Thermosetting sheet and dicing die bonding film

A thermosetting sheet according to the present invention includes, as essential components, a thermosetting resin and inorganic particles, and, as an optional component, a volatile component, in which a ratio of a packing ratio P2 of the inorganic particles in the thermosetting sheet after being cured to a packing ratio Pi of the inorganic particles in the thermosetting sheet before being cured is P2/P1≥1.3.

SINTER-BONDING COMPOSITION, SINTER-BONDING SHEET AND DICING TAPE WITH SINTER-BONDING SHEET

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 μm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 40% by mass and less than 80% by mass. The sinter-bonding sheet () has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet () and a dicing tape (). The dicing tape () has a lamination structure containing a base material () and an adhesive layer (), and the sinter-bonding sheet () is positioned on the adhesive layer () of the dicing tape (). 1. A sinter-bonding composition , comprising:sinterable particles containing an electroconductive metal,wherein:the particles have an average particle diameter of 2 μm or less, anda proportion of the particles having a particle diameter of 100 nm or less is not less than 40% by mass and less than 80% by mass.2. The sinter-bonding composition according to claim 1 ,wherein a content proportion of the sinterable particles is 90 to 98% by mass.3. The sinter-bonding composition according to claim 1 ,wherein a porosity thereof after sintering under conditions of 300° C., 40 MPa and 2.5 min is 10% or less.4. The sinter-bonding composition according to claim 1 ,wherein an elastic modulus thereof at 25° C. after sintering under conditions of 300° C., 40 MPa and 2.5 min as measured by a nanoindentation method is 60 GPa or more.5. The sinter-bonding composition according to claim 1 ,further comprising a thermally decomposable polymeric binder.6. The sinter-bonding composition according to claim 5 ,wherein a weight-average molecular weight of the thermally decomposable polymeric binder is 10,000 or more.7. The sinter-bonding composition according to claim 5 ,wherein the thermally decomposable polymeric binder is a polycarbonate resin and/or an acrylic resin ...

Manufacturing method for semiconductor device

A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.

Release sheet and release sheet-including silicone resin sheet

A release sheet includes a first moisture impermeable substrate layer and a water-containing layer laminated at one surface in a thickness direction of the first moisture impermeable substrate layer and containing water. The release sheet is used by covering a pressure-sensitive adhesive surface of a silicone resin sheet with the water-containing layer.

Manufacturing method for semiconductor device

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 μm and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.

Sheet for sintering bonding and sheet for sintering bonding with base material

To provide a sheet for sintering bonding and the same with a base material suited for lamination and integration and also suited for realizing satisfactory operational efficiency in a sintering process in a process of producing semiconductor devices that go through sintering bonding of semiconductor chips. A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In this sheet, the minimum load, reached during an unloading process in load-displacement measurement according to a nanoindentation method, is −100 to −30 μN. Alternatively, the ratio of the minimum load to a maximum load, reached during a load applying process in the above measurement, is −0.2 to −0.06. A sheet body X, a sheet for sintering bonding with a base material of the present invention, has a laminated structure comprising a base material B and the sheet 10.

Wound body of sheet for sintering bonding with base material

To provide a wound body of a sheet for sintering bonding with a base material that realizes a satisfactory operational efficiency in a process of producing a semiconductor device comprising sintering bonding portions of semiconductor chips and that also has both a satisfactory storage stability and a high storage efficiency. A wound body 1 according to the present invention has a form in which a sheet for sintering bonding with a base material X is wound around a winding core 2 into a roll shape, the sheet for sintering bonding with a base material X having a laminated structure comprising: a base material 11; and a sheet for sintering bonding 10, comprising an electrically conductive metal containing sinterable particle and a binder component.

Sheet for sintering bonding and sheet for sintering bonding with base material

To provide a sheet for sintering bonding and a sheet for sintering bonding with a base material that are suited for properly supplying a material for sintering bonding to a face planned to be bonded of a bonding object. A sheet for sintering bonding 10 according to the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In the sheet for sintering bonding 10 , the shear strength at 23° C., F (MPa), measured in accordance with a SAICAS method and the minimum load, f (μN), which is reached during an unloading process in load-displacement measurement in accordance with a nanoindentation method, satisfy 0.1≤F/f≤1. A sheet body X, which is a sheet for sintering bonding with a base material according to the present invention, has a laminated structure comprising a base material B and the sheet for sintering bonding 10.

Sheet for sintering bonding, sheet for sintering bonding with base material, and semiconductor chip with layer of material for sintering bonding

A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component, and upon subjecting the sheet to a pressurization treatment onto a silver plane of a 5 mm square Si chip under predetermined conditions, the ratio of the area of a layer of a material for sintering bonding transferred onto the silver plane to the silver plane area is 0.75 to 1. A sheet body X of the present invention has a laminated structure comprising a base material B and the sheet 10 . A semiconductor chip with a layer of a material for sintering bonding of the present invention comprises a semiconductor chip and a material layer derived from the sheet 10 on one face of the chip, and the ratio of the area of the material layer to the area of that face is 0.75 to 1.

SHEET FOR SINTERING BONDING AND SHEET FOR SINTERING BONDING WITH BASE MATERIAL

To provide a sheet for sintering bonding and a sheet for sintering bonding with a base material that are suited for being made with a good operational efficiency and that are also suited for realizing a satisfactory operational efficiency in a sintering process in a process of producing a semiconductor device that goes through sintering bonding of semiconductor chips. A sheet for sintering bonding of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component, and has a shear strength at 23° C. of 2 to 40 MPa measured in accordance with a SAICAS method. A sheet body X, which is a sheet for sintering bonding with a base material according to the present invention, has a laminated structure comprising a base material B and the sheet for sintering bonding

Sinter-bonding composition, sinter-bonding sheet and dicing tape with sinter-bonding sheet

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 μm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet ( 10 ) has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet ( 10 ) and a dicing tape ( 20 ). The dicing tape ( 20 ) has a lamination structure containing a base material ( 21 ) and an adhesive layer ( 22 ), and the sinter-bonding sheet ( 10 ) is positioned on the adhesive layer ( 22 ) of the dicing tape ( 20 ).

Laminate

The present invention is a laminate including a base sheet and a metal particle-containing layer laminated on the base sheet, and including metal particles. The base sheet has a contact surface in contact with the metal particle-containing layer, and a Young's modulus of the base sheet at 23 °C, which is obtained by measuring the contact surface using a nano-indentation method, is 0.01 to 10 GPa.

Thermosetting sheet and dicing die bonding film

A thermosetting sheet according to the present invention includes: a thermosetting resin; a volatile component; and conductive particles, in which a weight reduction ratio W₁ obtained when the thermosetting sheet under a nitrogen gas flow of 200 mL/min is heated from room temperature to 100 °C at a temperature rising rate of 10 °C/min and then maintained at 100 °C for 30 minutes is 0.5 mass % or less, and a weight reduction ratio W₂ obtained when the thermosetting sheet under a nitrogen gas flow of 200 mL/min is heated from 100 °C to 200 °C at a temperature rising rate of 10 °C/min and then maintained at 200 °C for 30 minutes is 2 mass % or more.

Semiconductor device and method for producing semiconductor device

The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.

Encapsulating sheet

An encapsulating sheet (1), for encapsulating an optical semiconductor element (5), includes an embedding layer (2) for embedding the optical semiconductor element and a gas barrier layer (3) provided at one side in a thickness direction of the embedding layer (2), having a thickness of 50 µm or more and 1,000 µm or less, and for suppressing the passing of a gas in the thickness direction.

Sinter-bonding composition, sinter-bonding sheet, and dicing tape with sinter-bonding sheet

【課題】高密度の焼結層による焼結接合を低負荷条件で実現するのに適した焼結接合用組成物、焼結接合用シート、および、焼結接合用シート付きのダイシングテープを提供する。【解決手段】本発明の焼結接合用組成物は、導電性金属含有の焼結性粒子を含む。この焼結性粒子の平均粒径は２μｍ以下であり、且つ、当該焼結性粒子における粒径１００ｎｍ以下の粒子の割合は８０質量％以上である。本発明の焼結接合用シート１０は、このような焼結接合用組成物のなす粘着層を備える。本発明の焼結接合用シート付きダイシングテープＸは、このような焼結接合用シート１０およびダイシングテープ２０を備える。ダイシングテープ２０は、基材２１と粘着剤層２２とを含む積層構造を有し、焼結接合用シート１０はダイシングテープ２０の粘着剤層２２上に位置する。【選択図】図５

Composition for sinter bonding, sheet for sinter bonding, and dicing tape with sheet for sinter bonding

The sinter-bonding composition according to the present invention contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 µm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 40% by mass and less than 80% by mass. The sinter-bonding sheet (10) according to the present invention has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) according to the present invention has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20). The sinter-bonding composition, the sinter-bonding sheet and the dicing tape with a sinter-bonding sheet according to the present invention are suitable for materializing sinter-bonding by a high-density sintered layer.

Fahrzeug-steuervorrichtung

Bereitgestellt wird eine Fahrzeug-Steuervorrichtung, geeignet zum zuverlässigeren Vermeiden einer Kollision zwischen einem Hindernis und einem Fahrzeug oder Reduzieren eines Kollisionsschadens durch genaueres Schätzen eines Typs und eines Risikos des Fahrzeugs als eine herkömmliche Fahrzeug-Steuervorrichtung. Eine Fahrzeug-Steuervorrichtung 100 ist eine in einem Fahrzeug V montierte Steuervorrichtung und umfasst eine Einheit 121 zum Erzeugen von dreidimensionalen Objektinformationen, eine Schadensgradkarten-Erzeugungseinheit 122 und eine Fahrsteuereinheit 123. Die Einheit 121 zum Erzeugen von dreidimensionalen Objektinformationen erfasst ein Objekt um das Fahrzeug V herum und erzeugt dreidimensionale Objektinformationen auf Basis von vom im Fahrzeug V montierten Außensensor V1 ausgegebenen Außenumgebungsinformationen. Die Schadensgradkarten-Erzeugungseinheit 122 erzeugt Informationen zu einer Vielzahl von durch Teilen eines das Objekt umfassenden Zielbereichs jeweils in einer Längsrichtung und einer Höhenrichtung auf Basis der erzeugten Außenumgebungsinformationen erhaltenen geteilten Bereichen und legt Schadensgrade jeweils für die Vielzahl von geteilten Bereichen entsprechend den Schadensgrößen zu einem Zeitpunkt der Kollision des Fahrzeugs V fest. Die

機能層−被覆層付光半導体素子の製造方法

【課題】被覆層の隙間の発生を抑制した機能層−被覆層付光半導体素子の製造方法を提供すること。【解決手段】機能層−反射層付素子１の製造方法は、光半導体素子２を、対向面２２と第１剥離基材３とが接触するように、第１剥離基材８の上に配置する第１工程、第１反射層４を、光半導体素子２の周側面２３に配置することにより、第１反射層−素子集合体１１を得る第２工程、第１反射層−素子集合体１１を、電極面２１が第２剥離基材８０に接触するように、第２剥離基材８０の上に転写し、かつ、第１反射層−素子集合体１１から第１剥離基材８を剥離する第３工程、複合機能層３を、複合機能層３と対向面２２とが接触するように、第１反射層−素子集合体１１の上に配置する第４工程、複合機能層３の一部を除去する第５工程、ならびに、第２反射層５を、複合機能層３の側面３２に配置する第６工程を備える。【選択図】図２

Vehicle position detection device and parameter set creation device for vehicle position detection

It is possible to reduce inadvertent vehicle behavior during autonomous driving. A vehicle position detection device includes: a satellite positioning position calculation unit 15 that receives a satellite positioning position signal of a vehicle and calculates a satellite positioning position of the vehicle; an autonomous navigation position calculation unit 16 that receives an autonomous navigation position signal of the vehicle and calculates an autonomous navigation position of the vehicle; a distance calculation unit 17 that calculates a positional difference between the satellite positioning position and the autonomous navigation position; a recording unit that stores a plurality of parameter sets in which a plurality of thresholds for allowing a positional difference for each speed of the vehicle are set per vehicle characteristic; a selection unit 14 that selects a parameter set according to the vehicle characteristic from a plurality of parameter sets 11 to 13 stored in the recording unit; and a determination unit 18 that outputs the satellite positioning position when the positional difference is within the threshold, and outputs the autonomous navigation position when the positional difference is out of the threshold.

焼結接合用シート、基材付き焼結接合用シート、および焼結接合用材料層付き半導体チップ

【課題】接合対象物間での焼結接合用材料のはみ出しを防止・抑制するのに適するとともに、形成される焼結層の接合強度を確保するのに適した、焼結接合用シートと基材付き焼結接合用シート、および、焼結接合用材料層付き半導体チップを、提供する。【解決手段】本発明の焼結接合用シート１０は、導電性金属含有焼結性粒子とバインダー成分を含み、５ｍｍ角のＳｉチップが有する銀平面に対する所定条件での加圧処理を経て銀平面上に転写される焼結接合用材料層の面積の、銀平面の面積に対する比率が、０.７５〜１である。本発明の基材付き焼結接合用シートであるシート体Ｘは、基材Ｂと焼結接合用シート１０を含む積層構造を有する。本発明の焼結接合用材料層付き半導体チップは、半導体チップと、その焼結接合予定面上の焼結接合用シート１０由来の焼結接合用材料層とを備え、焼結接合予定面の面積に対する焼結接合用材料層の面積の比率が０.７５〜１である。【選択図】図２

Manufacturing method for semiconductor device

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

Sheet for sintering bonding and sheet for sintering bonding with base material

To provide a sheet for sintering bonding and the same with a base material suited for lamination and integration and also suited for realizing satisfactory operational efficiency in a sintering process in a process of producing semiconductor devices that go through sintering bonding of semiconductor chips. A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In this sheet, the minimum load, reached during an unloading process in load-displacement measurement according to a nanoindentation method, is −100 to −30 μN. Alternatively, the ratio of the minimum load to a maximum load, reached during a load applying process in the above measurement, is −0.2 to −0.06. A sheet body X, a sheet for sintering bonding with a base material of the present invention, has a laminated structure comprising a base material B and the sheet 10.

Manufacturing method for semiconductor device

A manufacturing method includes the step of forming a diced semiconductor wafer ( 10 ) including semiconductor chips ( 11 ) from a semiconductor wafer (W) typically on a dicing tape (T 1 ). The diced semiconductor wafer ( 10 ) on the dicing tape (T 1 ) is laminated with a sinter-bonding sheet ( 20 ). The semiconductor chips ( 11 ) each with a sinter-bonding material layer ( 21 ) derived from the sinter-bonding sheet ( 20 ) are picked up typically from the dicing tape (T 1 ). The semiconductor chips ( 11 ) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer ( 21 ) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers ( 21 ) lying between the temporarily secured semiconductor chips ( 11 ) and the substrate, to bond the semiconductor chips ( 11 ) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

半導体装置製造方法

【課題】焼結性粒子含有の接合用材料を使用して接合される箇所を有する半導体装置の製造方法において、微小領域に対しても接合用材料の供給を効率よく正確に行うのに適した手法を提供する。【解決手段】本発明の半導体装置製造方法は、転写工程と仮固定工程と接合工程を含む。転写工程では、シート体Ｘにおける焼結性粒子含有の接合用シート１０の側を半導体素子モジュール２０における接合対象部２１に対して貼り合わせた後、接合用シート１０において接合対象部２１に圧着された箇所を接合用材料層１１として当該接合対象部２１上に残し且つ他の箇所を基材Ｂに伴わせつつ、基材Ｂの剥離を行う。仮固定工程では、接合用材料層１１付き接合対象部２１をその接合用材料層１１を介して基板に仮固定する。接合工程では、仮固定された接合対象部２１と基板との間に介在する接合用材料層１１から、加熱過程を経て接合層を形成して、接合対象部２１を基板に接合する。【選択図】図１

Method for producing a semiconductor device by consecutively sinter-bonding a plurality of semiconductor chips to a substrate upon application of pressure and heat and corresponding semiconductor device

A method for producing a semiconductor device includes a semiconductor chip mounting step of subsequently pressing a plurality of semiconductor chips (B1, B2) by a first pressing member (A) (e.g., a collet) to respectively bond the plurality of semiconductor chips (B1, B2) to a plurality of mounting areas (E1, E2) (e.g., die pads) provided on a substrate (D) (e.g., a lead frame), wherein the bonding is performed in a state where adhesive sheets (2) are respectively interposed between the plurality of semiconductor chips (B1, B2) and the plurality of mounting areas (E1, E2), wherein each of the adhesive sheets (2) includes sinterable metal particles that can be sintered by heating at a temperature of 400 °C or less, and the first pressing member (A) is heated to a temperature at which the sinterable metal particles can be sintered, for example, to a temperature of 250 °C or more, thereby subjecting the sinterable metal particles in the adhesive sheet (2) to a primary sintering. The substrate (D) may be mounted on a stage (H), and the primary sintering may be performed by heating the stage (H), in addition to the collet (A), to a temperature equal to or higher than the temperature at which the sinterable metal particles can be sintered. The method may further comprise performing, after the semiconductor chip mounting step, a secondary heating step of heating the substrate (D) with the plurality of semiconductor chips (B1, B2) mounted thereon to a temperature at which the sinterable metal particles can be sintered, thereby performing a secondary sintering, wherein, in the secondary heating step, the heating is performed while not pressing part or all of the plurality of semiconductor chips (B1, B2) onto the substrate (D) or, alternatively, while pressing part or all of the plurality of semiconductor chips (B1, B2) onto the substrate (D), for example, using a heating and pressing device (F) that includes two parallel flat plates configured to apply heat and located so ...

Vehicle control device

Provided is a vehicle control device capable of more reliably avoiding a collision between an obstacle and a vehicle or reducing a collision damage by more accurately estimating a type and a risk of the obstacle than a conventional vehicle control device. A vehicle control device 100 is a control device mounted on a vehicle V, and includes a three-dimensional object information generation unit 121 , a damage degree map generation unit 122 , and a travel control unit 123 . The three-dimensional object information generation unit 121 detects an object around the vehicle V and generates three-dimensional object information based on external environment information output from the external sensor V 1 mounted on the vehicle V. The damage degree map generation unit 122 generates information on a plurality of split regions obtained by splitting a target region including the object in each of a longitudinal direction and a height direction based on the generated external environment information, and sets damage degrees respectively to the plurality of split regions depending on magnitudes of damage at a time of collision of the vehicle V. The travel control unit 123 controls travel of the vehicle V to minimize a collision damage degree corresponding to the damage degree set in the split region.

機能層−被覆層付光半導体素子の製造方法

【課題】被覆層の隙間の発生を抑制した機能層−被覆層付光半導体素子の製造方法を提供すること。 【解決手段】機能層−反射層付素子１の製造方法は、下面２１、上面２２および周側面２３を有する光半導体素子２を、剥離基材８の上に、下面２１と剥離基材８とが接触するように、配置する第１工程、第１光反射層４を、光半導体素子２の周側面２３に配置する第２工程、複合機能層３を、光半導体素子２の上に、光半導体素子２を上下方向に投影したときに複合機能層３が光半導体素子２を含み、かつ複合機能層３が光半導体素子２よりも大きくなるように、配置する第３工程、ならびに、第２光反射層５を、複合機能層３の周側面３２に配置する第４工程を備える。 【選択図】図１

密封片材、密封光半導體元件之製造方法及光半導體裝置之製造方法

本發明之密封片材1具備用以密封光半導體元件15之密封層2。表示藉由對密封層2於頻率1Hz及升溫速度10℃/min之條件下進行動態黏彈性測定而獲得之儲存剪切彈性模數G'與溫度T之關係的曲線具有最小值。最小值下之溫度T處於60℃以上且200℃以下之範圍內。最小值下之儲存剪切彈性模數G'處於5Pa以上且1,000Pa以下之範圍內。

Laminate

Laminate

The present invention is a laminate including a base sheet and a metal particle-containing layer laminated on the base sheet, and including metal particles. The base sheet has a contact surface in contact with the metal particle-containing layer, and a Young's modulus of the base sheet at 23° C., which is obtained by measuring the contact surface using a nano-indentation method, is 0.01 to 10 GPa.

基材付き焼結接合用シートの巻回体

【課題】半導体チップ焼結接合箇所を含む半導体装置の製造過程において良好な作業効率を実現するとともに、良好な保存安定性と、高い保存効率とを兼ね備える、基材付き焼結接合用シートの巻回体を提供する。【解決手段】本発明の巻回体１は、基材１１と、導電性金属含有の焼結性粒子とバインダー成分とを含む焼結接合用シート１０と、を含む積層構造を有する基材付き焼結接合用シートＸが、巻き芯２に対してロール状に巻き取られた形態をなす。【選択図】図１

Ｉｃカード読み取り装置

(57)【要約】 【課題】ＩＣカードを媒体とする携帯用の端末装置にお いて、所有者のＩＣカードを識別する機能はなく、共通 ＩＣカードは全て受け付けていることで、個人端末装置 としての機能が共通端末として扱われる。 【解決手段】ＩＣカードからの取得情報で個人識別情報 を取り出し、個人識別情報を記録するメモリを設ける。 また、所有者のＩＣカードと一致しないと、端末装置の 受け付けを禁止する機能を設ける。

熱硬化性シート及びダイシングダイボンドフィルム

【課題】硬化後の放熱性が比較的高い熱硬化性シート及びダイシングダイボンドフィルムを提供する。 【解決手段】熱硬化性シートは、熱硬化性樹脂と、無機粒子とを必須成分として含み、かつ、揮発成分を任意成分として含む。硬化前の熱硬化性シート中における無機粒子の粒子充填率Ｐ １ に対する、硬化後の熱硬化性シート中における無機粒子の粒子充填率Ｐ ２ の比が、Ｐ ２ ／Ｐ １ ≧１．３である。 【選択図】なし

離型片材及附離型片材之聚矽氧樹脂片材

本發明之離型片材具備第1非透濕性基材層、及積層於第1非透濕性基材層之厚度方向之一面上且含有水之含水層。本發明係以利用含水層被覆聚矽氧樹脂片材之黏著面之方式使用。

離型片材及附離型片材之聚矽氧樹脂片材

枠部材および封止光半導体素子の製造方法

【課題】周囲の部材の汚染を防止することのできる枠部材およびそれを用いる封止光半導体素子の製造方法を提供すること。【解決手段】枠部材１は、封止層４３により光半導体素子４６を封止するために用いられ、第１空間１０が形成されるように構成される第１枠部２と、第１枠部２の外側に間隔を隔てて第１枠部２との間に第２空間１１が形成されるように配置され、第１枠部２を囲むように配置される第２枠部３と、第１枠部２と第２枠部３とを連結する連結部４とを備え、第１空間１０には、封止層４３および光半導体素子４６が配置され、第２空間１１は、封止層４３からの余剰の封止材料αを受け入れる。【選択図】図３

封止光半導体素子の製造方法

【課題】キャリアを再利用でき、かつ、支持層にアライメントマークを容易に形成することのできる、封止光半導体素子の製造方法を提供する。【解決手段】硬質のキャリア１０、合成樹脂からなる支持層２、および、素子集合体固定層３を備える仮固定部材３０を用意する工程（１）と、複数の光半導体素子１１が整列配置される素子集合体１６を素子集合体固定層３に仮固定する工程（２）と、封止層１２によって複数の光半導体素子１１を被覆する工程（３）と、封止層１２を切断する工程（４）と、封止素子集合体１９を素子集合体固定層３から剥離する工程（５）とを備える。支持層２には、アライメントマーク７を設けられる。工程（２）では、アライメントマーク７を基準にして、素子集合体１６を素子集合体固定層３に仮固定し、および／または、工程（４）では、アライメントマーク７を基準にして、封止層１２を切断する。【選択図】図１

密封光半導體元件之製造方法

本發明之密封光半導體元件之製造方法包括：步驟(1)，其係準備暫固定構件，該暫固定構件具備硬質之載體、支持於載體且包含合成樹脂之支持層、及支持於支持層之固定層；步驟(2)，其係將複數個光半導體元件整齊配置而成之元件集合體暫固定於固定層；步驟(3)，其係於步驟(2)之後，藉由密封層覆蓋複數個光半導體元件，而獲得具備元件集合體及密封層之密封元件集合體；步驟(4)，其係於步驟(3)之後，以使密封光半導體元件單片化之方式將密封層切斷；及步驟(5)，其係於步驟(4)之後，將密封元件集合體自固定層剝離。且於支持層設置有對準標記；於步驟(2)中，以對準標記為基準將元件集合體暫固定於固定層；及/或，於步驟(4)中，以對準標記為基準將密封層切斷。

半導体装置製造方法

【課題】半導体チップの焼結接合を経る半導体装置製造方法において、焼結接合用材料のロスを低減しつつ半導体チップへの焼結接合用材料の供給を効率よく行うのに適した手法を提供する。【解決手段】本製造方法は、基材Ｂと焼結接合用シート１０との積層構造を有するシート体Ｘにおける焼結接合用シート１０の側を、加工用テープＴ１上に並ぶ複数のチップＣ（半導体チップ）に対して貼り合わせた後、基材Ｂを焼結接合用シート１０から剥離する工程と、加工用テープＴ１上のチップＣを、焼結接合用シート１０において当該チップＣに密着している部分とともにピックアップして焼結接合用材料層付きチップＣを得る工程と、焼結接合用材料層付きチップＣをその焼結接合用材料層１１を介して基板に仮固定する工程と、仮固定されたチップＣと基板の間に介在する焼結接合用材料層１１から加熱過程を経て焼結層を形成して当該チップＣを基板に接合する工程とを含む。【選択図】図２

Manufacturing method for semiconductor device

A manufacturing method includes the step of laminating a sheet assembly (X) onto chips (C) arranged on a processing tape (T1), where the sheet assembly (X) has a multilayer structure including a base (B) and a sinter-bonding sheet (10) and is laminated so that the sinter-bonding sheet (10) faces the chips (C), and subsequently removing the base B from the sinter-bonding sheet (10). The chips (C) on the processing tape (T1) are picked up each with a portion of the sinter-bonding sheet (10) adhering to the chip (C), to give sinter-bonding material layer-associated chips (C). The sinter-bonding material layer-associated chips (C) are temporarily secured through the sinter-bonding material layer (11) to a substrate. The sinter-bonding material layers (11) lying between the temporarily secured chips (C) and the substrate are converted through a heating process into sintered layers, to bond the chips (C) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.

ディスプレイ装置

【課題】車載用のディスプレイ装置において、ユーザがディスプレイ装置にぶつかることを防止する。 【解決手段】画像を表示するディスプレイ１００と、ディスプレイ１００の表示面１２０が設置場所に対向している閉状態と該設置場所に対向していない開状態との間で、ディスプレイ１００を開閉駆動させる開閉駆動機構２００と、を有するディスプレイ装置に、開閉駆動機構２００の動作を制御する制御回路５００と、ディスプレイ１００から所定距離の範囲内への物体の接近を検出する人感センサ７００と、を設ける。制御回路５００は、ディスプレイ部１００が開状態において、人感センサ７００が物体の接近を検出すると、開閉駆動機構２００を制御し、ディスプレイ１００を該開状態から前記閉状態に動作させる。 【選択図】図１

框構件

框構件及密封光半導體元件之製造方法

本發明之框構件係用於藉由包含密封材料之密封層密封光半導體元件之框構件。框構件包含：第1框部，其係以形成第1空間之方式構成；第2框部，其係以隔開間隔而於與第1框部之間形成第2空間之方式配置於第1框部之外側，且以包圍第1框部之方式配置；及連結部，其連結第1框部與上述第2框部。於第1空間配置有密封層及光半導體元件。第2空間接收來自密封光半導體元件之密封層之過剩之密封材料。

Manufacturing method for semiconductor device

Composition for sinter bonding, sheet for sinter bonding, and dicing tape having sheet for sinter bonding

The sinter-bonding composition according to the present invention contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 µm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet (10) according to the present invention has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) according to the present invention has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20). The sinter-bonding composition, the sinter-bonding sheet and the dicing tape with a sinter-bonding sheet according to the present invention are suitable for materializing sinter-bonding by a high-density sintered layer under a low-loading condition.

Fahrzeugsteuerungsvorrichtung und fahrzeugsteuerungsverfahren

Die vorliegende Erfindung ermöglicht es einem autonom fahrenden Fahrzeug, eine Straße mit geringer Durchfahrtsbreite sicher zu befahren, ohne mit einem entgegenkommenden Fahrzeug zusammenzustoßen. Eine Fahrsteuereinheit, die das Fahren eines Trägerfahrzeugs steuert, basierend auf einem externen Sensor, der eine externe Umgebung des Trägerfahrzeugs als externe Information erfasst, und einer ersten Karte für autonomes Fahren, auf der eine geplante Fahrtroute des Trägerfahrzeugs festgelegt ist, erfasst einen Alternativpassierabschnitt vor dem Trägerfahrzeug aus der externen Information, legt vor und nach dem Alternativpassierabschnitt auf der ersten Karte für autonomes Fahren eine Vielzahl von Räumen als vorbestimmte Regionen fest, in denen das Trägerfahrzeug oder ein entgegenkommendes Fahrzeug vorübergehend anhalten kann, einen Raum bestimmt, in dem das Trägerfahrzeug an dem entgegenkommenden Fahrzeug vorbeifahren kann, basierend auf der Anordnung der Räume, als einen ersten Passierpunkt einen Raum festlegt, der dem Trägerfahrzeug jenseits des Alternativpassierabschnitts am nächsten ist und in dem Fahrzeuge aneinander vorbeifahren können, Zeiten berechnet, die das Trägerfahrzeug und das entgegenkommende Fahrzeug benötigen, um an dem ersten Passierpunkt anzukommen, in einem Fall, in dem das entgegenkommende Fahrzeug jenseits des

密封片材

本發明之密封片材係用以密封光半導體元件者，其具備：埋設層，其用以埋設光半導體元件；及阻氣層，其設置於埋設層之厚度方向一側，厚度為50 μm以上且1,000 μm以下，且用以抑制氣體通過厚度方向。

密封層被覆光半導體元件之製造方法及光半導體裝置之製造方法

密封層被覆光半導體元件之製造方法係包括光半導體元件、與被覆光半導體元件之密封層的密封層被覆光半導體元件之製造方法。密封層被覆光半導體元件之製造方法包括：準備包括平板狀之第1模具、與用以與第1模具對向配置之平板狀之第2模具的加壓機之步驟；將限制構件配置於加壓機之步驟，上述限制構件係用以限制超出對應密封層之設計厚度之加壓位置的加壓機之加壓方向上的第1模具及/或第2模具之移動；將包括剝離層與配置於剝離層之表面之B階段之密封層的密封構件於第1模具及第2模具之間以密封層面向第2模具的方式進行配置之步驟；將對應密封層之外形形狀之堰構件以向加壓方向投影時包圍密封層之方式進行配置之步驟；將包括基材、與配置於基材之表面之光半導體元件的元件構件於第1模具及第2模具之間且於對應密封構件之第2模具側以光半導體元件面向第1模具之方式進行配置的步驟；及使第1模具及第2模具靠近而使第1模具及/或第2模具位於加壓位置，而利用密封層被覆光半導體元件之步驟。

被覆層付光半導体素子および蛍光体層−被覆層付光半導体素子の製造方法

【課題】 光の取出効率に優れる被覆層付光半導体素子の製造方法、および、蛍光体層−被覆層付光半導体素子の製造方法を提供すること。【解決手段】この方法は、電極が設けられる第１下面１１、第１下面１１に対向する第１上面１２、および、第１下面１１と第１上面１２との周端縁を連結する第１側面１３を有する光半導体素子１と、光半導体素子１の第１側面１３に接触する光反射層２とを備える光反射層付光半導体素子１０の製造方法である。この方法は、光半導体素子１を用意する第１工程と、光反射層２を、光半導体素子１の第１側面１３に形成する第２工程と、第２工程において第１上面１２に付着する付着部分５を除去する第３工程とを備える。第２工程において第１上面１２に付着する付着部分５の厚みＴが、５０μｍ以下である。光反射層２の、ＪＩＳ Ｂ ０６０１（２００９）に従って測定される算術平均粗さＲａが、１０μｍ以下である。【選択図】図１

Sinter bonding sheet

A sinter bonding sheet includes a sinter bonding layer that includes sinterable particles containing a conductive metal, and an organic binder, in which the sinter bonding layer has a first adhesive surface for being adhered to an adherend and a second adhesive surface for being adhered to another adherend, and when the value of the minimum load reached during an unloading step in a load-displacement measurement according to the nanoindentation method to the first adhesive surface is b1, and the value of the minimum load reached during the unloading step in the load-displacement measurement according to the nanoindentation method to the second adhesive surface is b2, b1 satisfies -100 µN≤b1≤-35 µN and b2 satisfies -100 µN≤b2≤-35 µN.

Sinter bonding sheet

A sinter bonding sheet includes a sinter bonding layer that includes sinterable particles containing a conductive metal, and an organic binder, in which the sinter bonding layer has a first adhesive surface for being adhered to an adherend and a second adhesive surface for being adhered to another adherend, and when the value of the minimum load reached during an unloading step in a load-displacement measurement according to the nanoindentation method to the first adhesive surface is b1, and the value of the minimum load reached during the unloading step in the load-displacement measurement according to the nanoindentation method to the second adhesive surface is b2, b1 satisfies −100 μN≤b1≤−35 μN and b2 satisfies −100 μN≤b2≤−35 μN.