Trench embedding method and film-forming apparatus

A trench embedding method includes forming an oxidization barrier film on a trench; forming an expandable film on the oxidization barrier film; embedding an embedding material that contracts by being fired on the trench; and firing the embedding material, wherein the forming of the oxidization barrier film includes: forming a first seed layer on the trench by supplying an aminosilane-based gas; and forming a silicon nitride film on the first seed layer, wherein the forming of the expandable film includes: forming a second seed layer on the silicon nitride film by supplying an aminosilane-based gas; and forming a silicon film on the second seed layer.

PENDANT-TYPE POLYMERIC COMPOUND, COLOR CONVERSION FILM USING PENDANT-TYPE POLYMERIC COMPOUND, AND MULTICOLOR EMISSION ORGANIC EL DEVICE

The present invention provides green and red conversion films capable of keeping a sufficient intensity of converted light over a long period, and a multicolor emission organic EL device which exhibits light-emitting properties stably over a long period. The present invention includes a pendant-type polymeric compound characterized in that the pendant-type polymeric compound contains at least one repeating unit represented by a general formula (1) and at least one repeating unit represented by a general formula (2), (6) or (7), wherein n/(m+n)=1/100 to 100/100 provided that the molar ratio of (1):(2), (6) or (7) is m:n. 4. A film comprising the pendant-type polymeric compound according to .5. A color conversion film comprising the pendant-type polymeric compound according to .6. A color conversion film characterized by comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'claim-text': 'a low-molecular-weight dye compound.', 'the pendant-type polymeric compound according to ; and'}7. A color-converting light-emitting device characterized by comprising:an organic EL element; and{'claim-ref': {'@idref': 'CLM-00005', 'claim 5'}, 'the color conversion film according to .'} The present invention relates to a pendant-type polymeric compound which fluoresces in the form of a solid thin film is processable by a coating process, and has a high color-conversion efficiency. Moreover, the present invention relates to a color conversion film formed using the pendant-type polymeric compound. Furthermore, the present invention relates to a multicolor emission organic EL device formed using the color conversion film.Recently, with the advancement in optical technologies, organic fluorescent compounds have attracted attentions in a wide range of fields such as light-emitting materials for organic electroluminescence, dye lasers, and bioimaging. The organic fluorescent compounds are particularly applicable to a color conversion technique in which light at a desired wavelength ...

PROCESSING METHOD FOR FORMING STRUCTURE INCLUDING AMORPHOUS CARBON FILM

A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber. 1. A processing method for forming a structure including an amorphous carbon film by use of a hydrocarbon gas , the method comprising:placing a target substrate inside a reaction chamber, the target substrate including an underlying layer on which the structure is to be formed;then performing a preliminary treatment on a surface of the underlying layer by use of a silicon source gas serving as a preliminary treatment gas, the preliminary treatment supplying the preliminary treatment gas into the reaction chamber without supplying the hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber and setting the inside of the reaction chamber at a preliminary treatment temperature to activate the preliminary treatment gas only by heating at the preliminary treatment temperature; andthen performing main CVD (chemical vapor deposition) of forming an amorphous carbon film on the underlying layer, the main CVD supplying the hydrocarbon gas into the reaction chamber without supplying the preliminary treatment gas into the reaction chamber while exhausting gas from inside the reaction chamber and setting the inside of the reaction chamber at a main process temperature to activate the hydrocarbon gas ...

Method for cleaning thin film forming apparatus, thin film forming method, and thin film forming apparatus

A method for cleaning a thin film forming apparatus by removing extraneous matter attached to an interior of the thin film forming apparatus after supplying a treatment gas into a reaction chamber of the thin film forming apparatus and forming a thin film on an object to be processed, the method including: supplying a cleaning gas including fluorine gas, hydrogen fluoride gas, and chlorine gas into the reaction chamber heated to a predetermined temperature to remove the extraneous matter.

SOLID CATALYST FOR OLEFIN POLYMERIZATION AND PROCESS FOR PRODUCING OLEFIN POLYMER

A solid catalyst for olefin polymerization and a process for producing an olefin polymer are provided. The polymer has a small content of a component which is dissolved out into a low temperature organic solvent, such as a low-molecular weight component and an amorphous component. The solid catalyst is obtained by bringing a solid catalyst component for olefin polymerization containing a titanium atom, a magnesium atom, a halogen atom, and an aliphatic carboxylate; an organoaluminum compound; and a compound represented by formula (I) into contact with each other: 3. A process for producing an olefin polymer claim 1 , the process comprising a step of polymerizing an olefin in the presence of the solid catalyst for olefin polymerization according to .4. The process according to claim 3 , wherein the olefin comprises ethylene and an α-olefin.5. A process for producing an olefin polymer claim 2 , the process comprising a step of polymerizing an olefin in the presence of the solid catalyst for olefin polymerization according to .6. The process according to claim 5 , wherein the olefin comprises ethylene and an α-olefin. 1. Field of the InventionThe patent application claims the priority of the Paris Convention based on Japanese Patent Application No. 2011-205718 (filed on Sep. 21, 2011), and the entire content described in the aforementioned application is incorporated herein by reference.The present invention relates to a solid catalyst for olefin polymerization and a process for producing an olefin polymer.2. Description of the Related ArtConventionally, as a catalyst component for olefin polymerization, many solid catalyst components containing a titanium atom, a magnesium atom, a halogen atom, and an internal electron donor have been proposed. Catalysts using these solid catalyst components are desired to have a high polymerization activity in polymerization of an olefin and, at the same time, to give a polymer having a small content of a component which is dissolved ...

METHOD OF FORMING SEED LAYER AND METHOD OF FORMING SILICON-CONTAINING THIN FILM

Provided is a method of forming a seed layer for forming a thin film, which is capable of further improving a thickness uniformity of the thin film. The method of forming a seed layer that is a seed of the thin film on a base includes adsorbing at least silicon included in an aminosilane-based gas on the base, by using the aminosilane-based gas; and depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane on the base, on which at least the silicon included in the aminosilane-based gas is adsorbed, by using the higher-order silane-based gas having an order that is equal to or higher than the disilane. 1. A method of forming a seed layer that is a seed of a thin film on a base , the method comprising:adsorbing at least silicon included in an aminosilane-based gas on the base, by using the aminosilane-based gas; anddepositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane on the base, on which at least the silicon included in the aminosilane-based gas is adsorbed, by using the higher-order silane-based gas having an order that is equal to or higher than the disilane.2. The method of claim 1 , wherein the adsorption of the silicon in the adsorbing of at least silicon is performed by adsorbing silicon having a monatomic layer order by using an atomic layer deposition (ALD) method claim 1 , and the deposition of the silicon in the depositing of at least silicon is performed by using a chemical vapor deposition (CVD) method that silicon is deposited due to CVD reaction.3. The method of claim 1 , after the depositing of at least silicon claim 1 , further comprising:re-adsorbing at least the silicon included in the aminosilane-based gas on the base, on which at least the silicon included in the higher-order silane-based gas having an order that is equal to or higher than the disilane is deposited, by using the aminosilane-based gas; ...

COLOR CONVERSION FILTER

A color conversion filter contains at least one kind of squarylium dye that radiates fluorescence light, has a wavelength conversion capability, absorbs light in an unneeded wavelength region, radiates fluorescence light in a preferable wavelength region, and does not allow decrease in brightness, and thus is preferable for color conversion light-emitting devices, photoelectric conversion devices and the like. Specifically, the color conversion filter has an absorption having a high intensity in the range of 570 to 600 nm, and thus is preferable for use in a color conversion filter that radiates fluorescence light having a high intensity in the range of 600 to 780 nm. 15-. (canceled)7. A color conversion light-emitting device comprising a luminescent part and the color conversion filter according to .8. The color conversion light-emitting device according to claim 7 , wherein the luminescent part is an LED element.9. A photoelectric conversion device comprising a photoelectric conversion element and the color conversion filter according to . The present invention relates to a color conversion filter that contains a squarylium dye that radiates fluorescence light, and has a wavelength conversion capability. The color conversion filter is a color conversion filter that enables multicolor display with high definition, high brightness and high efficiency, and is also excellent in producibility. The color conversion filter of the present invention is useful for displaying displays such as liquid crystals, PDPs and organic ELs, image sensors, personal computers, word processors, audios, videos, car navigations, telephone sets, mobile terminals and industrial measurement devices and the like, for photoelectric conversion elements such as solar batteries, for illuminations such as fluorescent lamps, LEDs and EL illuminations, for dye lasers, for copy protection, and the like.Compounds having an absorption in the visible light region are used as optical elements in optical ...

DRIVING APPARATUS FOR OPENING AND CLOSING BODY FOR VEHICLE

A hypocycloid reducer for reducing rotation of a flat motor to output the speed-reduced rotation to a drum is provided between the drum and the flat motor a rotor shalt member which is rotated with the same rotation number as the flat motor is axially aligned with the drum is provided on the same side as the flat motor An output rotation body for outputting the speed-reduced rotation is axially aligned with the drum and provided on the same side as the drum. Since the rotor shaft member and the output rotation body are axially aligned with the drum, turning force can be transmitted bi-directionally between the rotor shaft member and the output rotation body Therefore, it is possible to eliminate an electromagnetic clutch to reduce the driving apparatus in size and weight, and since wires and control logic of the electromagnetic clutch are not needed for the driving apparatus, the driving apparatus can be reduced in production cost. 1. A driving apparatus for an opening and closing body for vehicle , for driving an opening and closing body provided to a vehicle body to open and close the opening and closing body , the driving apparatus comprising:a drum rotatably provided to one of the vehicle body and the opening and closing body, a wire member whose one end is wound on the drum, and whose the other end is connected to the other of the vehicle body and the opening and closing body;an electric motor for driving the drum so as to rotate the drum;a differential reducer provided between the drum and the electric motor, and adapted to reduce the rotation of the electric motor to output the speed-reduced rotation to the drum;an input member axially aligned with the drum, and provided on the same side of the differential reducer as the electric motor, the input member being rotated by the electric motor with the same rotation number as the electric motor; andan output member axially aligned with the drum, and provided on the same side of the differential reducer as the ...

Method of forming a laminated semiconductor film

According to some embodiments of the present disclosures, a method of forming a laminated semiconductor film is constituted by alternately laminating first and second semiconductor films on an underlying film of each of a plurality of substrates to be processed. The method includes performing a first operation of forming the first semiconductor film and a second operation of forming the second semiconductor film until a predetermined number of laminated films are obtained. In the method, a film forming temperature in the first operation and a film forming temperature in the second operation are set to be equal to each other, and temperatures between the first and second operations are set to be constant.

SCHIFF BASE TYPE COLOR CONVERSION LAYER, LIGHT ABSORBING LAYER, AND FILTER

Disclosed are a compound that emits fluorescence, particularly in its solid state, and is suited to provide a color converting material with various improved performance properties over prior art and a light emitter, a color conversion filter, a color conversion device, and a photoelectric device each containing the compound; particularly a Schiff base type compound of formula (I) and a coloring material, a color conversion layer, a light absorbing layer, a color conversion filter, a light absorbing filter, a color-converting light-emitting device, and a photoelectric device each containing the compound. 7. A color conversion filter comprising one or more color conversion layers at least one of which is the color conversion layer according to .8. A light absorbing filter comprising one or more light absorbing layers at least one of which is the light absorbing layer according to . This application is a division of application Ser. No. 13/055,937 filed on Jan. 26, 2011, which is a National Stage of PCT/JP2010/061153 filed on Jun. 30, 2010, which claims foreign priority to Japanese application No. 2009-179089 filed on Jul. 31, 2009. The entire contents of each of the above applications are herby incorporated by reference.This invention generally relates to a novel Schiff base type compound. The invention also relates to a coloring material, a color conversion layer, a light absorbing layer, a color conversion filter, a light absorbing filter, a color converting light emitting device, and a photoelectric device each containing the Schiff base type compound. More particularly, it relates to a color conversion filter useful in applications to: display devices, such as liquid crystal displays, PDPs, and organic electro luminescent displays; display panels of image sensors, personal computers, word processors, audio equipment, video equipment, car navigation systems, phones, personal digital assistants, and industrial instruments; lighting equipment, such as fluorescent ...

VIDEO TRANSMISSION DEVICE, VIDEO TRANSMISSION METHOD, VIDEO RECEIVING DEVICE, AND VIDEO RECEIVING METHOD

A video transmission device comprising: a reference signal generation unit which generates a reference signal based on time information; an imaging unit which images a video signal based on the reference signal generated by means of the reference signal generation unit; a compression unit which performs digital compression encoding of the video signal imaged by means of the imaging unit; a network processing unit which receives, from a network, time information and phase information about a reference signal in regard to the time information and, also, transmits the digital compression encoded video signal; and a control unit which controls the reference signal generation unit and the network processing unit. Here, the control unit modifies the phase of the reference signal generated with the reference signal generation unit in response to the time information and the phase signal received with the network processing unit. 1. A video transmission device , comprising:a reference signal generation unit which generates a reference signal based on time information;an imaging unit which images a video signal based on a reference signal generated by means of said reference signal generation unit;a compression unit which performs digital compression encoding of the video signal imaged by means of said imaging unit;a network processing unit which receives, from a network, time information and reference signal phase information in regard to said time information and, also, transmits said digital compression encoded video signal; anda control unit which controls said reference signal generation unit and said network processing unit; wherein:said control unit controls said reference signal generation unit to modify, in response to said time information and said phase signal, received with said network processing unit, the phase of said reference signal generated with said reference signal generation unit.2. The video transmission device according to claim 1 , wherein:said ...

IMPURITY DIFFUSION METHOD, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation ); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation ); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation ), wherein in the operation , an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas. 1. An impurity diffusion method for diffusing impurities into a thin film , the method comprising:transferring an object, on which the thin film is formed, into a processing chamber;raising a temperature of the object to a vapor diffusion temperature in the processing chamber; andsupplying an impurity-containing gas that contains the impurities into the processing chamber together with an inert gas and diffusing the impurities into the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature,wherein in the supplying of an impurity-containing gas, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film, is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.2. The method of claim 1 , wherein if the impurity diffusion acceleration gas additionally has a reducing operation claim 1 , in the raising of a temperature of the object claim 1 , the impurity diffusion acceleration gas is supplied together with the inert gas so as to reduce a native oxide film existing on a surface of the thin film formed on the object while raising the temperature of the object.3. The method of claim wherein in ...

METHOD AND APPARATUS FOR FORMING SILICON FILM

A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed. In the etching process, the silicon film formed in the first film forming process is etched. In the doping process, the silicon film etched in the etching process is doped with impurities containing boron. In the second film forming process, a silicon film doped with impurities containing boron is formed so as to embed the silicon film that is doped in the doping process. 1. A method of forming a silicon film on a groove provided on a surface of an object to be processed , the method comprising:a first silicon film forming process of forming a first silicon film doped with impurities including boron so as to embed the groove;an etching process of etching the first silicon film formed in the first silicon film forming process; anda second silicon film forming process of forming a second silicon film doped with impurities including boron so as to embed the first silicon film that is etched in the etching process.2. The method of claim 1 , wherein in the first silicon film forming process claim 1 , the first silicon film doped with impurities including boron is formed to have an opening with respect to the groove claim 1 , in the etching process claim 1 , the first silicon film is etched so as to enlarge the opening claim 1 , and in the second silicon film forming process claim 1 , the second silicon film doped with impurities including boron is formed to embed the opening.3. The method of claim 2 , wherein in the etching process claim 2 , the first silicon film is etched so that the opening is provided in a V-shape.4. The method of claim 1 , further comprising a doping process which dopes the first silicon film that is etched in the etching process with the ...

LIGHT-DIFFUSING RESIN COMPOSITION AND LIGHT-DIFFUSING SHEET USING SAME

Disclosed is a light-diffusing resin composition capable of realizing high color rendering properties and brightness when used in light-diffusing sheets, and a light-diffusing sheet and a light source unit using same. Provided are the light-diffusing resin composition including a binder resin (A) preferably in 1 to 80 mass %, a light-diffusing agent (B) preferably in 15 to 95 mass %, and a trimethine cyanine compound (C) represented by formula (I) preferably in 0.0001 to 5 mass %; and the light-diffusing sheet using the light-diffusing resin composition in a light-diffusing layer. The light source unit has the light-diffusing sheet and a light source, preferably a white LED. 2. The light-diffusing resin composition according to claim 1 , wherein the composition comprises 1 to 80% by mass of the binder resin (A) claim 1 , 15 to 95% by mass of the light-diffusing agent (B) claim 1 , and 0.0001 to 5% by mass of the trimethine cyanine compound (C) represented by the general formula (I).3. A light-diffusing sheet comprising a transparent substrate layer and a light-diffusing layer formed on at least one side of the substrate layer claim 1 , wherein the light-diffusing layer is made of the light-diffusing resin composition according to .4. A light source unit comprising a light-diffusing sheet according to and a light source.5. The light source unit according to claim 4 , wherein the light source is a white LED.6. A light-diffusing sheet comprising a transparent substrate layer and a light-diffusing layer formed on at least one side of the substrate layer claim 2 , wherein the light-diffusing layer is made of the light-diffusing resin composition according to . The present invention relates to a light-diffusing resin composition including a trimethine cyanine compound having a specific structure, and a light-diffusing sheet using the same. The light-diffusing resin composition and the light-diffusing sheet of the present invention are useful for display devices, such as ...

METHOD OF VAPOR-DIFFUSING IMPURITIES

A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption. 1. A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate , comprising:loading the target substrate and the dummy substrate in a substrate loading jig;accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus; andvapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig,wherein, when the vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.2. The method of claim 1 , wherein the loading claim 1 , the accommodating claim 1 , and the vapor-diffusing are performed on the target substrate and the dummy substrate in a batch processing unit claim 1 , and in a subsequent batch processing unit claim 1 , the loading claim 1 , the accommodating claim 1 , and the vapor-diffusing are performed on a subsequent target substrate and the dummy substrate from the batch processing unit.3. The method of claim 1 , wherein after vapor-diffusing the impurities claim 1 , an oxygen gas purge is performed.4. The method of claim 1 , wherein after vapor-diffusing the impurities ...

INFORMATION PROCESSING APPARATUS

An information processing device having a processor and memory, and including one or more accelerators and one or more storage devices, wherein: the information processing device has one network for connecting the processor, the accelerators, and the storage devices; the storage devices have an initialization interface for accepting an initialization instruction from the processor, and an I/O issuance interface for issuing an I/O command; and the processor notifies the accelerators of the address of the initialization interface or the address of the I/O issuance interface. 1. An information processing apparatus , comprising:a processor;a memory;at least one accelerator;at least one storage device; anda network configured to couple the processor, the at least one accelerator, and the at least one storage device to one another, an initial setting interface configured to receive an initialization instruction from the processor; and', 'an I/O interface configured to issue an I/O command, and, 'wherein the at least one storage device compriseswherein the processor is configured to notify the at least one accelerator of one of an address of the initial setting interface and an address of the I/O interface.2. The information processing apparatus according to claim 1 , a first I/O interface configured to receive an I/O command from the processor; and', 'at least one second I/O interface configured to receive an I/O command from the at least one accelerator, and, 'wherein the I/O interface compriseswherein the at least one storage device is capable of receiving the I/O command separately from the processor and the at least one accelerator.3. The information processing apparatus according to claim 1 ,wherein the processor is configured to issue a data processing command to the at least one accelerator for instruction to process data stored in the at least one storage device,wherein the at least one accelerator, which has received the data processing command, is configured to ...

FLASH MEMORY PACKAGE AND STORAGE SYSTEM INCLUDING FLASH MEMORY PACKAGE

A flash memory package has a controller and at least one memory including a flash memory. The controller stores received write data in a primary storage area, which is a partial storage area of the memory, sets the unit of storage area including the plurality of physical pages as the unit of collective transfer to perform collective transfer and, when a volume of data accumulated in the primary storage area is equal to or larger than the capacity of one unit of collective transfer of the flash memory, collectively transfers a volume of data corresponding to the capacity of at least one unit of collective transfer from the primary storage area to a secondary storage area, which is a partial storage area of the flash memory. 1. A flash memory package comprising: a controller; and at least one memory including a flash memory , whereinthe flash memory includes a plurality of physical blocks, each of the physical blocks is the unit of data erasure, the physical blocks each include a plurality of physical pages, and each of the physical pages is the unit of data write, andthe controller is configured to:store received write data in a primary storage area, which is a partial storage area of the memory;set the unit of storage area including the plurality of physical pages as the unit of collective transfer to perform collective transfer; andwhen a volume of data accumulated in the primary storage area is equal to or larger than a capacity of one unit of collective transfer of the flash memory, collectively transfer a volume of data corresponding to the capacity of at least one unit of collective transfer from the primary storage area to a secondary storage area, which is a partial storage area of the flash memory.2. The flash memory package according to claim 1 , further comprising:page management information including information indicating a relation between a position of a logical page and a logical block; andblock management information including information indicating ...

TOUCH SENSOR UNIT

First and second bridging portions (and ) is disposed so as to form a shock absorbing space () between the sensor accommodating portion () and the fixing portion (), and elastically deformed by external force, and the paired bridging portions (the shock absorbing space ()) is caused to function as a shock absorbing portion (). Furthermore, the sensor accommodating portion () is thinner than each pf the bridging portions (and ), after the sensor accommodating portion () is elastically deformed and a contact of a blockage is detected, the first and second bridging portions (and ) can be elastically deformed to absorb a shock. Therefore, it is possible to significantly reduce a load on the blockage in comparison with the conventional technique. Since the drive unit is reversely driven after shock absorption, it is possible to reduce the load on the drive unit and so forth, and to inhibit the occurrence of inconvenience such as burning. 1. A touch sensor unit for detection of contact with a blockage , comprising:a cable sensor having electrodes which are brought into electrical contact with each other by external force;a sensor accommodating portion in which the cable sensor is accommodated, and which is deformed by external force;a fixing portion integrally provided to the sensor accommodating portion, and fixed to a fixing object, anda pair of bridging portions disposed so as to form a space between the sensor accommodating portion and the fixing portion, and elastically deformed by external force,wherein the sensor accommodating portion has a thickness dimension along a direction crossing a longitudinal direction of the cable sensor, the thickness dimension being thinner than a thickness dimension of the bridging portions along the direction crossing the longitudinal direction of the cable sensor.2. The touch sensor unit according to claim 1 , whereinthe fixing object is an opening and closing body which opens and closes an opening portion, andthe fixing portion ...

STORAGE APPARATUS, DATA PROCESSING METHOD AND STORAGE SYSTEM

A management controller controls a data buffer and a flash controller, which controls I/O of data to and from flash memories, based on a search request. A data decompression engine includes a plurality of data decompression circuits for decompressing, in parallel, the compressed data transferred from the data buffer. A data search engine includes a plurality of data search circuits for searching, in parallel, data which satisfies search conditions among the respective data that were decompressed by the data decompression circuits, and transfers, to the search request source, the data obtained in the search performed by the data search circuits, wherein the flash controller reads, in parallel, a plurality of compressed data requested in the search request, and transfers the read compressed data to the data buffer, and the management controller transfers the compressed data to the data decompression engine when the compressed data is stored in the data buffer. 1. A storage apparatus , comprising:a plurality of flash memories which store a plurality of compressed data;a flash controller which controls I/O of data to and from the flash memories;a data buffer which temporarily stores the compressed data read from the flash memories by the flash controller;a management controller which controls I/O of data to and from the data buffer and controls activation of the flash controller based on a search request from a search request source;a data decompression engine which includes a plurality of data decompression circuits for sequentially inputting the compressed data transferred from the data buffer and decompressing, in parallel, each of the input compressed data; anda data search engine which includes a plurality of data search circuits for searching, in parallel, data which satisfies search conditions requested in the search request among the respective data that were decompressed by each of the data decompression circuits, and transfers, to the search request source, ...

STORAGE UNIT AND STORAGE DEVICE

A storage unit includes a plurality of storage devices that form a RAID group, that are coupled to the same bus, and that communicate with each other. Each of the plurality of storage devices includes a device controller and a storage medium. The plurality of storage devices store each of data and parities generated on the basis of the data, the data and the parities being included in RAID stripes. A first device controller of a first storage device included in the RAID group transmits, to the plurality of storage devices included in the RAID group other than the first storage device, an instruction to transfer the data and/or the parities included in the RAID stripes and restores the data or the parity corresponding to the first storage device of the RAID stripes on the basis of the transferred data and the transferred parities. 1. A storage unit comprising a plurality of storage devices forming a RAID group , coupled to a same bus , and configured to communicate with each other , whereineach of the plurality of storage devices includes a device controller and a storage medium that stores data,the plurality of storage devices are configured to store each of multiple pieces of data and parities generated on the basis of the multiple pieces of data, the multiple pieces of data and the parities being included in RAID stripes, anda first device controller of a first storage device included in the RAID group is configured to transmit, to the plurality of storage devices included in the RAID group other than the first storage device, an instruction to transfer the multiple pieces of data and/or the parities included in the RAID stripes and restore the data or the parity corresponding to the first storage device of the RAID stripes on the basis of the transferred multiple pieces of data and the transferred parities.2. The storage unit according to claim 1 , whereinthe device controller of each of the plurality of storage devices is configured to receive RAID configuration ...

ROLLER UNIT AND VEHICULAR OPENING-CLOSING BODY DRIVING DEVICE

A roller unit includes a base bracket () that supports a slide door, a cable holder () formed integrally with the base bracket () and that holds cable ends (and ) of cables ( and ), and a cable guide () detachably installed at the cable holder () and that guides the cables ( and ), wherein the cable guide () is formed to separate the cables ( and ) from the base bracket (), and a load applied to the cable guide () by tensile forces of the cables ( and ) is received by the cable holder () and the base bracket (). 1. A roller unit that slidably supports a slide door along a guide rail installed at a vehicle main body and to which other end of an opening cable and other end of a closing cable are connected , wherein one end of the opening cable and one end of the closing cable are connected to a driving device configured to automatically open and close the slide door , the roller unit comprising:a bracket installed over the guide rail and the slide door and that supports the slide door at an end portion thereof which is on an opposite side to the vehicle main body;a roller installed at an end portion of the bracket on a slide door side and that rolls in the guide rail;a cable holder formed integrally with the bracket at the end portion of the bracket on the slide door side and that holds the other ends of the opening cable and the closing cable; anda cable guide detachably installed at the cable holder and that guides the opening cable and the closing cable,wherein the cable guide is formed to separate the opening cable and the closing cable from the bracket, anda load applied to the cable guide by tensile forces of the opening cable and the closing cable is received by the cable holder and the bracket.2. The roller unit according to claim 1 , wherein the cable guide is disposed between the other end of the opening cable attached to the cable holder and the other end of the closing cable attached to the cable holder claim 1 , andthe opening cable and the closing cable ...

DYE FOR PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTRIC CONVERSION DEVICE

A photoelectric conversion device that includes a work electrode, an opposed electrode, and an electrolyte-containing layer. In the work electrode, a metal oxide semiconductor layer supporting a dye is provided. The dye contains a cyanine compound that has a methine chain, an indolenine skeleton bonded with both ends of the methine chain, and anchor groups introduced to a nitrogen atom included in the indolenine skeleton. Electron injection efficiency to the metal oxide semiconductor layer is improved, and the dye is hardly exfoliated from the metal oxide semiconductor layer. 3. The photoelectric conversion device according to claim 2 , wherein at least one of R9 and R10 shown in the Chemical formula (3) is an alkyl group with carbon atomicity from 6 to 25 both inclusive.5. The photoelectric conversion device according to claim 4 , wherein ring A and ring B shown in the Chemical formula (4) are a benzene ring having a methoxy group.6. The photoelectric conversion device according to claim 4 , wherein at least one of R9 claim 4 , R10 claim 4 , R12 claim 4 , and R13 shown in the Chemical formula (4) is an alkyl group with carbon atomicity from 6 to 25 both inclusive.7. The photoelectric conversion device according to claim 4 , wherein all of R9 claim 4 , R10 claim 4 , R12 claim 4 , and R13 shown in Chemical formula (4) is the alkyl group with carbon atomicity from 6 to 25 both inclusive.8. The photoelectric conversion device according to claim 1 , wherein Q is a linkage group in which a methine chain with carbon atomicity of 5 is a skeleton and a cyano group is introduced to a carbon atom as a center of the methine chain.9. The photoelectric conversion device according to claim 1 , wherein the anchor group is a group represented by —CH—CH—C(═O)—OH or a group represented by —CH—CH—C(═O)—O.10. The photoelectric conversion device according to claim 1 , wherein the support body is formed by electrolytic precipitation and contains zinc oxide (ZnO). This is a divisional of ...

Silicon Film Forming Method, Thin Film Forming Method and Cross-Sectional Shape Control Method

The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher. 1. A silicon film forming method for forming a silicon film on a workpiece having a processed surface , comprising:forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; andforming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer,wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.2. The method of claim 1 , wherein the seed layer is formed by having silicon adsorbed onto the processed surface without subjecting silicon to vapor phase growth on the processed surface claim 1 , and an adsorption density of the silicon is controlled by adjusting the process temperature of forming a seed layer is set within the range of 350 degrees C. or lower and the room temperature or higher.3. The method of claim 1 , wherein the process temperature of forming a seed layer is set within a range of less than 300 degrees C. and more than 200 degrees C.4. The method of claim 1 , wherein the process temperature of forming a seed layer is set within a range of less than 250±25 degrees C.5. The method of claim 1 ...

METHOD AND APPARATUS FOR FORMING SILICON FILM

Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the seed layer. 1. A method of forming a silicon film in a groove formed on a surface of an object to be processed , the method comprising:forming a first silicon layer on the surface of the object to be processed to embed the groove;doping impurities near a surface of the first silicon layer;forming a seed layer on the doped first silicon layer; andforming a second silicon layer containing impurities on the seed layer.2. The method of claim 1 , wherein in forming the first silicon layer claim 1 , the first silicon layer is formed to contain impurities by in-situ doping.3. The method of claim 1 , wherein in forming the first silicon layer claim 1 , the first silicon layer is formed to contain none of impurities.4. The method of claim 2 , further comprising etching the first silicon layer formed in the groove claim 2 , wherein in doping the impurities claim 2 , the impurities are doped near a surface of the etched first silicon layer.5. The method of claim 3 , further comprising etching the first silicon layer formed in the groove claim 3 , wherein in doping the impurities claim 3 , the impurities are doped near a surface of the etched first silicon layer.6. The method of claim 4 , wherein in forming the first silicon layer claim 4 , the first silicon layer is formed such that the groove of the object to be processed has an opening portion claim 4 ,in etching the first silicon layer, the first silicon layer formed in the groove is etched such that the opening portion of the groove is expanded, andin forming the second silicon layer, the second silicon layer is formed to be ...

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Processing apparatus

A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

METHOD OF FORMING GERMANIUM FILM AND APPARATUS THEREFOR

There is provided a method of forming a germanium (Ge) film on a surface of a target object, which includes: supplying an aminosilane-based gas into a processing chamber in which the target object is loaded; supplying a high-order silane-based gas of disilane or higher into the processing chamber; and supplying a Ge source gas into the processing chamber. A process temperature in supplying the Ge source gas is set to fall within a range from a temperature, at which the Ge source gas is thermally decomposed or higher, to 300 degrees C. or less. 1. A method of forming a germanium (Ge) film on a surface of a target object , comprising:supplying an aminosilane-based gas into a processing chamber in which the target object is loaded;supplying a high-order silane-based gas of disilane or higher into the processing chamber; andsupplying a Ge source gas into the processing chamber,wherein a process temperature in supplying the Ge source gas is set to fall within a range from a temperature, at which the Ge source gas is thermally decomposed or higher, to 300 degrees C. or less.2. The method of claim 1 , wherein claim 1 ,the supplying an aminosilane-based gas includes forming an aminosilane seed layer on the surface of the target object,the supplying a high-order silane-based gas includes forming a high-order silane seed layer on the aminosilane seed layer, andthe supplying a Ge source gas includes forming the Ge film on the high-order silane seed layer.3. The method of claim 1 , wherein the process temperature in the supplying a Ge source gas is set to fall within a range from a temperature claim 1 , at which the Ge source gas is thermally decomposed or higher claim 1 , to 275 degrees C. or less.4. The method of claim 2 , wherein a Ge concentration of the Ge thin film is controlled to fall within a range from more than 70% to 100% or less.5. The method of claim 2 , wherein a Ge concentration of the Ge film is controlled to fall within a range from more than 80% to 100% or ...

ENCODING METHOD AND ENCODING DEVICE

Reduction in power consumption is not considered in the prior art documents. Provided is an encoding method for encoding image information and having: a step in which image information is input; an analysis step in which the characteristics of the input image information are analyzed; a bit depth output step in which the bit depth for video encoding is determined and output; and an encoding step in which the bit depth output in the bit depth output step is used and the input image information is encoded. The encoding method is characterized by the output bit depth being switched in the bit depth output step, on the basis of the analysis results from the analysis step. 1. An encoding method comprising:a step in which an image information is inputted;an analysis step of analyzing a feature of the inputted image information;a bit-depth output step of determining and outputting a bit-depth with respect to video encoding; andan encoding step of performing an encoding process on the inputted image information using the bit-depth output in the bit-depth output step,wherein, in the bit-depth output step, a bit-depth to be output is switched based on an analysis result in the analysis step.2. The encoding method according to claim 1 , whereinin the bit-depth output step, the bit-depth to be output is switched from a first bit-depth to a second bit-depth when a region in which the amount of the feature analyzed in the analysis step is within a predetermined threshold value is changed from a first state to a second state.3. The encoding method according to claim 2 , whereinin the analysis step, the feature amount of the inputted image information is analyzed for each predetermined unit region,the first state is a state in which the number of continuous unit regions in which the feature amount analyzed in the analysis step is within the predetermined threshold value is equal to or larger than a predetermined number,the second state is a state in which the number of continuous ...

SILICON FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS

There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film. 110-. (canceled)11. A method of forming a silicon film , the method comprising:a film forming step of forming the silicon film on a base; andan etching step of reducing a film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film,wherein concave-convex portions are formed in a surface of the base, andwherein the etching step includes etching the silicon film formed on the concave-convex portions of the base in a conformal manner.12. The method of claim 11 , wherein the film thickness of the silicon film is a film thickness at which no pinhole is generated.13. The method of claim 11 , wherein the film forming step includes:a seed layer forming step of forming a seed layer on a surface of the base by supplying an aminosilane-based gas onto the base; anda first silicon film forming step of forming another silicon film on the seed layer by supplying an amino group-free silane-based gas onto the seed layer.14. The method of claim 13 , further comprising:a second silicon film forming step of supplying a higher-order silane-based gas than the amino group-free silane-based gas used in the first silicon film forming step to the seed layer between the seed layer forming step and the first silicon film forming step.15. The method of claim 11 , wherein the film forming step includes forming the silicon film on the concave-convex portions of the base in a conformal manner.16. The method of claim 11 , wherein the film forming step and the etching step are successively performed in a same processing chamber.17. The method of claim 11 , wherein the etching step is performed at a ...

APPARATUS FOR FORMING SILICON-CONTAINING THIN FILM

Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer. 1. An apparatus for forming a silicon-containing thin film , the apparatus comprising:a processing chamber in which a substrate having a base is disposed;a process gas supply mechanism which supplies gas used for a process into the processing chamber;a heating device which heats the substrate;an exhauster which evacuates the interior of the processing chamber; and forming a first seed layer on the base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas;', 'forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and', 'forming the silicon-containing thin film on the dual seed layer., 'a controller which is configured to control the process gas supplying mechanism, the heating device, and the exhauster to perform2. The apparatus of claim 1 , wherein the controller is configured to perform the adsorption of the ...

Image encoding apparatus

An image encoding apparatus is provided which realizes an encoding process at a high bit rate without degradation in image quality at boundary parts within a picture. The image encoding apparatus 1 includes: a plurality of entropy encoding sections 105 and 106 for generating bit streams by entropy-encoding intermediate data generated from syntax elements of image data; and an encoding control section 104 for supplying the intermediate data to any of the entropy encoding sections. The encoding control section 104 determines the entropy encoding section that performs an entropy encoding process by a frame in accordance with the processing status of each of the entropy encoding sections.

SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD

There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon. The film forming apparatus is provided separately from the etching apparatus, the etching apparatus performing, a first etching step in which the film including silicon is partway etched by using plasma; and a second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma, the film forming apparatus performing a film forming step in which the film including carbon is formed, without generating plasma, on the film including silicon on which the first etching step has been performed. 1. A substrate processing system comprising:an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon;a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon, wherein the film forming apparatus is provided separately from the etching apparatus;the etching apparatus performing:a first etching step in which the film including silicon is partway etched by using plasma; anda second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma,the film forming apparatus performing a film forming step in which the film including carbon is formed, without ...

Image Processing Device

An image processing device is an image processing device mounted on a vehicle. The image processing device includes: a captured image input part to which a plurality of captured images having different photographing sensitivities are input; a combined image input part to which a combined image with high gradation generated using the plurality of captured images is input; a feature information generation part that generates predetermined feature information using an input image; and a determination part that determines an image to be input to the feature information generation part as one of the combined image and the captured images on a basis of at least one of a state of the vehicle and a state around the vehicle. 1. An image processing device mounted on a vehicle , comprising:a captured image input part to which a plurality of captured images having different photographing sensitivities are input;a combined image input part to which a combined image with high gradation generated using the plurality of captured images is input;a feature information generation part that generates predetermined feature information using an input image; anda determination part that determines an image to be input to the feature information generation part as one of the combined image and the captured images on a basis of at least one of a state of the vehicle and a state around the vehicle.2. The image processing device according to claim 1 , wherein the feature information generated by the feature information generation part is at least one of distance information and motion vector information.3. The image processing device according to claim 1 , wherein the determination part further determines a frame rate of the image to be input to the feature information generation part on the basis of at least one of the state of the vehicle and the state around the vehicle.4. The image processing device according to claim 3 , wherein the determination part maintains the frame rate of the ...

FILM FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM

A film forming method of embedding a metal film in a recess, which is formed in a substrate and has an insulating film formed on a surface of the recess, includes: conformally forming a base film in the recess; etching the base film such that a surface of the insulating film formed on an upper portion of an inner wall of the recess is exposed and the base film remains on a bottom portion in the recess; and selectively growing the metal film on the base film remaining on the bottom portion in the recess. 1. A film forming method of embedding a metal film in a recess , which is formed in a substrate and has an insulating film formed on a surface of the recess , the method comprising:conformally forming a base film in the recess;etching the base film such that a surface of the insulating film formed on an upper portion of an inner wall of the recess is exposed and the base film remains on a bottom portion in the recess; andselectively growing the metal film on the base film remaining on the bottom portion in the recess.2. The film forming method of claim 1 , wherein the etching the base film is performed in a supply rate limiting state.3. The film forming method of claim 1 , wherein the selectively growing the metal film is performed by supplying a gas having an incubation time shorter for the base film than for the insulating film.4. The film forming method of claim 1 , wherein the conformally forming the base film claim 1 , the etching the base film claim 1 , and the selectively glowing the metal film are consecutively performed in the same processing container.5. The film forming method of claim 1 , wherein the conformally forming the base film claim 1 , the etching the base film claim 1 , and the selectively glowing the metal film are performed in separate processing containers claim 1 , which are connected to one another via a vacuum transfer chamber.6. The film forming method of claim 1 , wherein the conformally forming the base film is performed through an ...

CLEANING METHOD AND FILM FORMING METHOD

There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon. 1. A cleaning method of a film forming apparatus in which a process of forming a silicon film , a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed , comprising:etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.2. The cleaning method of claim 1 , wherein the act of etching away is performed whenever the film forming process is performed.3. The cleaning method of claim 1 , wherein the act of etching away is performed after the film forming process is performed plural times.4. The cleaning method of claim 1 , wherein in the act of etching away claim 1 , a wall surface of the processing container is heated to a temperature of 300 degrees C. or more and less than 700 degrees C.5. The cleaning method of claim 1 , wherein in the act of etching away claim 1 , a wall surface of the ...

Amorphous Silicon Crystallizing Method, Crystallized Silicon Film Forming Method, Semiconductor Device Manufacturing Method and Film Forming Apparatus

There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystalize silicones contained in at least the second amorphous silicon film. 1. A method of crystallizing amorphous silicones , comprising:forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; andperforming a crystallization treatment on the stacked structure to crystalize silicones contained in at least the second amorphous silicon film.2. The method of claim 1 , wherein the first amorphous silicon film is doped with an impurity for suppressing the crystallization of the first amorphous silicon film.3. The method of claim 2 , wherein the impurity includes at least one of carbon claim 2 , oxygen claim 2 , and nitrogen.4. The method of claim 1 , wherein crystal seeds are generated in an interfacial zone facing the first amorphous silicon film in the second amorphous silicon film claim 1 ,wherein a density of the crystal seeds is decreased by forming the stacked structure.5. The method of claim 4 , wherein a size of each of polycrystalline grains grown from the crystal seeds in the second amorphous silicon film is increased as the density of the crystal seeds decreases.6. The method of claim 1 , wherein the first amorphous silicon film has a thinner thickness than the second amorphous silicon film.7. The method of claim 1 , further comprising: after the silicones contained in the second amorphous silicon film are crystallized claim 1 , crystalizing silicones contained in the first amorphous silicon film.8. ...

Touch sensor unit and manufacturing method thereof

A first separator that prevents a pair of electrodes from short-circuiting each other is provided on end parts of the pair of electrodes in a longitudinal direction thereof, a first molded resin part that covers the first separator is provided on an end part of an insulation tube in a longitudinal direction thereof, a part of the first separator) on one side in a direction intersecting the longitudinal direction and another part of the first separator on the other side in the direction intersecting the longitudinal direction are each exposed to outside. When the first separator is embedded in the first molded resin part through insert molding, the first separator can be supported by a lower mold and an upper mold, portions of the first separator supported by the pair of molds at this time are portions exposed to outside.

ASPHALT MODIFIER, ASPHALT COMPOSITION, AND ASPHALT MIXTURE FOR ROAD PAVEMENT

An asphalt modifier comprising a polyolefin-based copolymer comprising an ethylene-derived monomer unit and a monomer unit having an epoxy group is disclosed. The content of the monomer unit having an epoxy group is 13% by mass or more based on the mass of the polyolefin-based copolymer. 1. An asphalt modifier comprising a polyolefin-based copolymer comprising an ethylene-derived monomer unit and a monomer unit having an epoxy group , wherein a content of the monomer unit having an epoxy group is 13% by mass or more based on the mass of the polyolefin-based copolymer.2. The asphalt modifier according to claim 1 , wherein a melt flow rate of the polyolefin-based copolymer is 300 g/10 min or less.3. The asphalt modifier according to claim 1 , further comprising a styrene butadiene styrene block copolymer.4. An asphalt composition claim 1 , the asphalt composition being a melt kneaded product of a raw material mixture comprising the asphalt modifier according to .5. The asphalt composition according to claim 4 , wherein a content of the polyolefin-based copolymer in the raw material mixture is 0.01 to 3% by mass based on the mass of the raw material mixture.6. An asphalt mixture for road pavement comprising the asphalt composition according to claim 4 , and an aggregate. The present invention relates to an asphalt modifier, an asphalt composition, and an asphalt mixture for road pavement.Asphalt is modified with a modifier containing a polyolefin-based resin in some cases in order to improve the heat resistance of asphalt and prevent stripping thereof (for example, Patent Literature 1). In the case of the asphalt compositions used in road pavement, prevention of the stripping of asphalt is important to reduce damage of roads derived from stripping. In addition, it is required that the asphalt composition should have high heat resistance (high softening point), because, in general, road surfaces reach high temperature (for example, 56° C. or more) in some cases.Patent ...

Film forming apparatus, film forming method and heat insulating member

There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.

STORAGE APPARATUS AND DATA PROCESSING METHOD THEREOF, AND STORAGE SYSTEM

A storage apparatus has a plurality of hardware engines which send and receive information to and from a controller, which, on the condition of acquiring a request command from a host, determines identifying information of the request command, executes data I/O processing to the storage device according to the request command when first identifying information has been added to the request command and when second identifying information has been added to the acquired request command, transfers the request command to the hardware engine, acquires the data requested by the hardware engine from the storage device and transfers the acquired data to the hardware engine. The hardware engine acquires and analyzes an add-on command from the host and according to the request command, requests the controller to transfer the data based on the analysis result, and thereafter executes processing to the data transferred by the controller according to the add-on command. 1. A storage apparatus , comprising:a plurality of storage devices which include at least a plurality of flash memories for storing data;a controller which sends and receives information to and from a host, which manages a request command and one or more add-on commands, and controls I/O of data to and from each of the storage devices; andone or more hardware engines which send and receive information to and from the host and the controller,wherein the controller:on the condition of acquiring the request command from the host, determines identifying information which has been added to the acquired request command and executes data I/O processing to the storage device according to the acquired request command when the controller determines that first identifying information has been added to the acquired request command, and, when the controller determines that second identifying information has been added to the acquired request command, transfers the acquired request command to one of the hardware engines based ...

BATCH-TYPE VERTICAL SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE HOLDER

A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber. 1. A batch-type vertical substrate processing apparatus , comprising:a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted;a heating device installed outside the processing chamber and configured to heat an interior of the processing chamber;a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction;a gas supply mechanism configured to supply a process gas into the processing subspaces; anda gas exhaust mechanism configured to exhaust the process gas from the processing subspaces,wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber.2. The apparatus of claim 1 , wherein the substrate holder includes a plurality of division plates configured to divide a holding part for holding the target ...

WORK SUPPORT SYSTEM AND WORK SUPPORT METHOD

A highly-reliable work report is prepared while reducing the worker's burdens. A work support system prepares a work report by using information including at least a video collected while conducting work. The work support system includes: a work completion recognition unit that judges a completion of the work from the information collected while conducting the work and recognizes completion time of day of the work; a video extraction unit that extracts a video upon completion of the work from the video, which are collected while conducting the work, with reference to the completion time of day of the work; a work recognition unit that recognizes a work item(s) of the work by using the extracted video upon completion of the work; and a work history generation unit that generates a work history of the work in the work report on the basis of recognition results by the work completion recognition unit and the work recognition unit 1. A work support system for preparing a work report by using information including at least a video collected while conducting work ,the work support system comprising:a work completion recognition unit that judges a completion of the work from the information and recognizes completion time of day of the work;a video extraction unit that extracts a video upon completion of the work from the video with reference to the completion time of day of the work;a work recognition unit that recognizes a work item or work items of the work by using the video upon completion of the work which is extracted by the video extraction unit; anda work history generation unit that generates a work history of the work in the work report on the basis of recognition results by the work completion recognition unit and the work recognition unit.2. The work support system according to claim 1 ,wherein the information collected while conducting the work includes the video and sound data; andwherein the work completion recognition unit judges the completion of the work ...

ANTIOXIDANT FOR THERMOPLASTIC RESIN AND THERMOPLASTIC RESIN COMPOSITION CONTAINING SAME

Disclosed is an antioxidant for a thermoplastic resin that provides an excellent oxidation-preventing effect to a thermoplastic resin and that has an excellent effect of preventing a change in color caused by nitrogen oxides. Specifically, a compound represented by any of General Formulae (2) to (4), particularly a compound in which Rin the formulae is an alkyl group having 1 to 8 carbon atoms whose terminal on an oxygen atom side is linked with —CO—O—, is used as the antioxidant for a thermoplastic resin. Details of General Formulae (2) to (4) are as described in the description. 2. The antioxidant for a thermoplastic resin according to claim 1 , the antioxidant being a compound in which Rin General Formulae (2) to (4) is an alkyl group having 1 to 8 carbon atoms whose terminal on an oxygen atom side is linked with —CO—O—.3. A thermoplastic resin composition obtained by adding 0.01 to 0.5 parts by mass of the antioxidant for a thermoplastic resin according to to 100 parts by mass of a thermoplastic resin.4. The thermoplastic resin composition according to claim 3 , wherein the thermoplastic resin is a polyolefin-based resin.5. A vehicle member formed from the thermoplastic resin composition according to .6. A thermoplastic resin composition obtained by adding 0.01 to 0.5 parts by mass of the antioxidant for a thermoplastic resin according to to 100 parts by mass of a thermoplastic resin.7. A vehicle member formed from the thermoplastic resin composition according to . The present invention relates to an antioxidant for stabilizing a thermoplastic resin that is easily oxidatively deteriorated at room temperature. More specifically, the present invention relates to providing a thermoplastic resin composition containing an antioxidant that has a structure in which a phenolic hydroxyl group is protected with a specific substituent, particularly with an alkyl carbonate group, and that has an excellent effect of preventing oxidation, particularly of a polyolefin-based ...

CONNECTOR AND CONNECTOR PAIR

A connector pair includes a first connector, and a second connector electrically connected to the first connector. The first connector includes a first electrical contact part provided with a graphene film on a metal base material. The second connector includes a second electrical contact part electrically connected to the first connector via the graphene film. A contact area between the first electrical contact part and the second electrical contact part is smaller than an area of the graphene film coating the metal base material. 1. A connector pair comprising:a first connector; anda second connector electrically connected to the first connector,wherein the first connector includes a first electrical contact part provided with a graphene film on a metal base material,the second connector includes a second electrical contact part electrically connected to the first connector via the graphene film, anda contact area between the first electrical contact part and the second electrical contact part is smaller than an area of the graphene film coating the metal base material.2. The connector pair according to claim 1 ,wherein the metal base material in the first electrical contact part includes an oxide film of a metal on a surface thereof.3. The connector pair according to claim 2 ,wherein the metal base material is copper, and the oxide film is cuprous oxide or copper oxide.4. The connector pair according to claim 1 ,wherein the graphene film is reduced graphene oxide.5. The connector pair according to claim 1 ,wherein the first electrical contact part further includes a conductive polymer film between the metal base material and the graphene film.6. A connector used as the first connector of the connector pair according to . This application claims priority from Japanese Patent Application No. 2020-010601 filed on Jan. 27, 2020, the entire contents of which are incorporated herein by reference.The present invention relates to a connector and a connector pair.A ...

CAULKING DIE, CAULKING TOOL, METHOD FOR MANUFACTURING CAULKING JOINT USING THEM

A caulking die according to an embodiment of the present invention includes an end surface being connected to each of an upper surface and a lower surface. The end surface includes a first protruded part including a first top portion, a recessed groove, and a second protruded part including a second top portion in sequential order from the lower surface side toward the upper surface side. A length of the second top portion is larger than a length of the first top portion, and a height of the second protruded part is larger than a height of the first protruded part in a cross-sectional view perpendicular to a width direction of the end surface. A caulking tool includes the caulking die. A method for manufacturing a caulking joint uses the caulking tool. 1. A caulking die , comprising:an upper surface;a lower surface; andan end surface being connected to each of the upper surface and the lower surface,wherein the end surface comprises a first protruded part including a first top portion, a recessed groove, and a second protruded part including a second top portion in sequential order from the lower surface side toward the upper surface side,wherein the first protruded part, the recessed groove, and the second protruded part extend along a width direction of the end surface, andwherein a length of the second top portion is larger than a length of the first top portion, and a height of the second protruded part on a basis of the end surface is larger than a height of the first protruded part on the basis of the end surface in a cross-sectional view perpendicular to the width direction.2. The caulking die according to claim 1 , wherein the first protruded part has a trapezoidal form in the cross-sectional view.3. The caulking die according to claim 1 , wherein the length of the first top portion is smaller than a length between the first top portion and the second top portion in the cross-sectional view.4. The caulking die according to claim 1 , further comprising an ...

METHOD OF ENCODING PICTURE AND PICTURE ENCODING DEVICE

A buffering delay can be reduced and moving picture encoding in low delay is performed while deterioration of picture quality is minimized. 1. A method of generating an encoded moving picture , the method comprising:a quantization parameter determination step of determining a quantization parameter;an encoding step of encoding a moving picture using the determined quantization parameter and generating an encoded bit; andan outputting step of outputting the encoded bit generated in the encoding step,wherein, in an encoded stream output in the outputting step in a predetermined section unit smaller than one frame, an amount of generated bits larger than a first amount of bits corresponding to a predetermined bitrate is tolerated, and in each section of the predetermined section unit, a difference between the amount of generated bits and the first amount of bits is a second amount of bits or less.2. The method of generating an encoded moving picture according to claim 1 , wherein the second amount of bits is a product of the predetermined bitrate and a predetermined delay time.3. The method of generating an encoded moving picture according to claim 2 , wherein X claim 2 , N claim 2 , Y claim 2 , and D of an encoded video to be transmitted satisfy a relationship of N Подробнее

POLYCARBONATE RESIN COMPOSITION AND MOLDED BODY OF SAME

Disclosed is a polycarbonate resin composition containing (a) an aromatic polycarbonate, (b) a polyester, and (c) a polymer having an epoxy group. The following requirements are satisfied. 1. A polycarbonate resin composition , comprising:(a) an aromatic polycarbonate;(b) a polyester; and(c) a polymer having an epoxy group,wherein the polycarbonate resin composition satisfies the following requirements:(1) a content of the (a) aromatic polycarbonate is 75% by mass or more based on a mass of the polycarbonate resin composition;(2) a mass ratio of a content of the (c) polymer having an epoxy group with respect to a content of the (b) polyester is 0.8 or more; and(3) a content of a sum of the (b) polyester and the (c) polymer having an epoxy group is 25 parts by mass or less with respect to 100 parts by mass of the (a) aromatic polycarbonate.2. The polycarbonate resin composition according to claim 1 , wherein the mass ratio of the content of the (c) polymer having an epoxy group with respect to the content of the (b) polyester is more than 2.0.3. The polycarbonate resin composition according to claim 1 , further containing (d) an ethylene-based polymer.4. The polycarbonate resin composition according to claim 3 , wherein a density of the (d) ethylene-based polymer is less than 0.930 g/cm.5. The polycarbonate resin composition according to claim 1 , wherein the (b) polyester comprises polybutylene terephthalate.6. The polycarbonate resin composition according to claim 1 , wherein the (b) polyester comprises polyethylene terephthalate.7. A molded body comprising the polycarbonate resin composition according to . The present invention relates to a polycarbonate resin composition and a molded body thereof.In order to improve the impact resistance of a resin composition containing an aromatic polycarbonate, for example, a copolymer composed mainly of an α-olefin and a glycidyl ester of an α,β-unsaturated acid may be incorporated into the resin composition (for example, ...

RESIN MODIFIER AND METHOD FOR PRODUCING SAME

Disclosed is a resin modifier containing a polymer comprising a monomer unit having an epoxy group. In a C NMR spectrum of the polymer measured in deuterated orthodichlorobenzene to which tetramethylsilane is added, a signal Xat a chemical shift of 69.4±0.5 ppm and a signal Xat a chemical shift of 75.1±0.5 ppm are observed when a chemical shift of a signal attributed to tetramethylsilane is taken as 0 ppm. 1. A resin modifier comprising a polymer containing a monomer unit having an epoxy group , wherein a signal at a chemical shift of 69.4±0.5 ppm and a signal at a chemical shift of 75.1±0.5 ppm are observed when a chemical shift of a signal attributed to tetramethylsilane is taken as 0 ppm in a C NMR spectrum of the polymer measured in deuterated orthodichlorobenzene to which tetramethylsilane is added.2. The resin modifier according to claim 1 , wherein a proportion of the monomer unit having an epoxy group in the polymer is 10% by mass or more based on a mass of the polymer.3. The resin modifier according to claim 1 , wherein the resin modifier is used for modifying a resin having an active hydrogen group.4. A method for producing the resin modifier according to claim 1 , comprising singly heating a polymer containing a monomer unit having an epoxy group to 220° C. or more.5. A resin composition comprising the resin modifier according to and a resin having an active hydrogen group. The present invention relates to a resin modifier and a method for producing the same.In order to improve various kinds of properties such as impact resistance and molding processability of various kinds of resins having reactive active hydrogen groups such as a carboxyl group, a compound having an epoxy group is used as a resin modifier in some cases. For example, Patent Literatures 1 and 2 disclose a combination of a polyester resin with a low molecular weight having a carboxyl group and a compound having an epoxy group as a binder, in which a metal salt of a carboxylic acid is used ...

Method for Crystallizing Group IV Semiconductor, and Film Forming Apparatus

A method for crystallizing a group IV semiconductor to form group IV semiconductor crystals on a process surface of a workpiece on which a process is performed, includes forming an additive-containing group IV semiconductor film on the process surface of the workpiece by supplying a group IV semiconductor precursor gas serving as a precursor of the group IV semiconductor and an additive gas which lowers a melting point of the group IV semiconductor and which includes an additive whose segregation coefficient is smaller than “1”, liquefying the additive-containing group IV semiconductor film, and solidifying the liquefied additive-containing group IV semiconductor film from the side of the process surface of the workpiece to form the group IV semiconductor crystals. 1. A method for crystallizing a group IV semiconductor to form group IV semiconductor crystals on a process surface of a workpiece on which a process is performed , the method comprising:forming an additive-containing group IV semiconductor film on the process surface of the workpiece by supplying a group IV semiconductor precursor gas serving as a precursor of the group IV semiconductor and an additive gas which lowers a melting point of the group IV semiconductor and which includes an additive whose segregation coefficient is smaller than “1”;liquefying the additive-containing group IV semiconductor film; andsolidifying the liquefied additive-containing group IV semiconductor film from the side of the process surface of the workpiece to form the group IV semiconductor crystals.2. The method of claim 1 , wherein the process surface includes the same crystals of the group IV semiconductor as the group IV semiconductor included in the group IV semiconductor precursor gas.3. The method of claim 1 , wherein liquefying the additive-containing group IV semiconductor film includes applying heat equal to the melting point of the additive-containing group IV semiconductor film or more and less than a melting ...

PULLEY APPARATUS

An object of the present invention is to provide a pulley apparatus which can be suppressed in shakiness without being deteriorated in workability in fitting the pulley apparatus to a vehicle body. The pulley apparatus has: a pulley case CA disposed on one side of a vehicle body panel making up the vehicle; a pulley disposed rotatable in the pulley case CA; and a cable guide disposed in the pulley case CA, wherein the cable guide comes in slide contact with a cable led from the same side as the guide rail in the vehicle body panel , and curves the cable along vehicle body panel to direct the cable to the pulley . As a result, when a load “F” is applied to the cable , the case body can be pressed against the vehicle body panel , thereby suppressing the shakiness of the pulley case CA. Furthermore, since the load presses the pulley case CA against the vehicle body panel , without providing the pulley case (fitting portion), it is possible to prevent an increase in size of the pulley case CA and deterioration of workability in fitting the pulley case CA to the vehicle body. 1. A pulley apparatus which makes up a slide door opening and closing mechanism for opening and closing a slide door disposed on one side of a vehicle , and changes the pulling direction of a cable which pulls the slide door , comprising:a pulley case disposed on one side of a vehicle body panel making up the vehicle;a pulley disposed rotatable in the pulley case, the pulley having a pulley groove into which the cable is guided in; anda cable guide disposed in the pulley case, the cable guide guiding the cable led from the other side to said one side of the vehicle body panel, in slide contact with the cable, and curving the cable along vehicle body panel to direct the cable to the pulley.2. The pulley apparatus according to claim 1 , whereinthe pulley is disposed in the pulley case such that the axial direction of the pulley matches the thickness direction of the vehicle body panel.3. The pulley ...

Film forming method

A method of forming a silicon film, a germanium film or a silicon germanium film on a target substrate having a fine recess formed on a surface of the target substrate by a chemical vapor deposition method includes placing the target substrate having the fine recess in a processing container, and supplying a film forming gas containing an element constituting a film to be formed and a chlorine-containing compound gas into the processing container. Adsorption of the film forming gas at an upper portion of the fine recess is selectively inhibited by the chlorine-containing compound gas.

WAVELENGTH-VARIABLE OPTICAL FILTER MODULE

A variable wavelength optical filter module according to the present invention includes a package, a variable wavelength optical filter, and a detector. The package includes a reflection part (reflecting faces) in the inside of the package. The variable wavelength optical filter is disposed in the inside of the package and includes a first reflecting plate and a second reflecting plate facing each other, with a clearance between the first reflecting plate and the second reflecting plate being variable. The detector is disposed in the inside of the package and detects a ray of light having passed through the variable wavelength optical filter. Then, the variable wavelength optical filter and the detector are disposed on the opposite side to the reflection part (reflecting faces). The ray of the light incident into the inside of the package via the variable wavelength optical filter enters the detector via the reflection part (reflecting faces). 1. A variable wavelength optical filter module , comprising: 'a reflection part in an inside of the package;', 'a package including'} 'a first reflecting plate and a second reflecting plate facing each other with a variable clearance therebetween; and', 'a variable wavelength optical filter disposed in the inside of the package and including'}a detector disposed in the inside of the package, for detecting a ray of light passing through the variable wavelength optical filter,wherein the variable wavelength optical filter and the detector are disposed on an opposite side to the reflection part, andthe ray of the light incident into the inside of the package via the variable wavelength optical filter enters the detector via the reflection part.2. The variable wavelength optical filter module according to claim 1 ,wherein the package includes a first region and a second region,the variable wavelength optical filter and the detector are disposed in the first region, andthe reflection part is formed in the second region.3. The ...

WORK SUPPORT SYSTEM AND WORK SUPPORT METHOD

A work support system is capable of avoiding situations where a worker performs erroneous work. The system includes an identification unit which identifies a target of an inquiry from a worker based on a video acquired by an imaging device, a selection unit which selects determination model information corresponding to each of one or more targets of inquiry identified by the identification unit from a storage unit storing determination model information to be used in a determination model. A determination unit determines whether each of the targets of inquiry is correct by using each of the determination models in which the determination model information, which was selected by the selection unit, corresponding to each of the one or more targets of inquiry identified by the identification unit, has been set in the determination model. An output unit outputs a determination result of the determination unit. 1. A work support system , comprising:an identification unit which identifies a target of an inquiry from a worker based on a video acquired by an imaging device;a selection unit which selects determination model information corresponding to each of one or more targets of inquiry identified by the identification unit from a storage unit storing determination model information to be used in a determination model for determining whether the target of inquiry is correct for each target of inquiry;a determination unit which determines whether each of the targets of inquiry is correct by using each of the determination models in which the determination model information, which was selected by the selection unit, corresponding to each of the one or more targets of inquiry identified by the identification unit has been set in the determination model; andan output unit which outputs a determination result of the determination unit.2. The work support system according to claim 1 ,wherein the selection unit, for each work, extracts one or more targets of inquiry related to ...

TRENCH FILLING METHOD AND PROCESSING APPARATUS

The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed. 1. A method for filling a trench formed on an insulating film of a workpiece , the method comprising:forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench;forming a second amorphous silicon film on the first amorphous silicon film; andannealing the workpiece after the second amorphous silicon film is formed.2. The method of claim 1 , wherein forming a first impurity-containing amorphous silicon film claim 1 , forming a second amorphous silicon film and annealing the workpiece are performed within a vessel of a processing apparatus claim 1 , andwherein an internal pressure of the vessel in the annealing the workpiece is lower than an internal pressure of the vessel in the forming the second amorphous silicon film.3. The method of claim 1 , further comprising:forming a seed layer having an aminosilane-based gas or a high-order silane gas on the wall surface which defines the trench, the first amorphous silicon film being formed on the seed layer.4. The method of claim 1 , wherein claim 1 , forming a first impurity-containing amorphous silicon film comprises supplying a silicon raw gas and one or more of a CHgas claim 1 , a NO gas claim 1 , a NO gas and a NHgas.5. A processing apparatus claim 1 , comprising:a vessel;a gas supply unit configured to supply a first gas for forming a first impurity-containing amorphous silicon film and a second gas for forming a second amorphous silicon film, into the vessel;a heating unit configured to heat an internal space of the vessel; anda control unit configured to control the gas supply unit and the ...

METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM

A method of forming a silicon oxide film for burying the silicon oxide film in a trench formed on a surface of a target object includes forming a silicon film on the trench of the target object, etching the silicon film, oxidizing the silicon film subjected to the etching to form a first silicon oxide film, and forming a second silicon oxide film on the first silicon oxide film to cover the first silicon oxide film formed through the oxidizing the silicon film while the second silicon oxide film is buried in the trench of the target object. 1. A method of forming a silicon oxide film for burying the silicon oxide film in a trench formed on a surface of a target object , the method comprising:forming a silicon film on the trench of the target object;etching the silicon film;oxidizing the silicon film subjected to the etching to form a first silicon oxide film; andforming a second silicon oxide film on the first silicon oxide film to cover the first silicon oxide film formed through the oxidizing the silicon film while the second silicon oxide film is buried in the trench of the target object.2. The method of claim 1 , wherein claim 1 , in the etching the silicon film claim 1 , the etching is performed such that a V-shaped trench portion is formed.3. The method of claim 1 , wherein claim 1 , in the forming a silicon film claim 1 , the silicon film is formed after aminosilane is adsorbed onto the trench of the target object.4. The method of claim 3 , wherein the forming a silicon film includes:a first process of forming the silicon film on the trench of the target object, to which aminosilane is adsorbed, under a first pressure; anda second process of forming another silicon film on the silicon film under a second pressure lower than the first pressure.5. An apparatus for forming a silicon oxide film for burying the silicon oxide film in a trench formed on a surface of a target object accommodated in a reaction chamber claim 3 , the apparatus comprising:a silicon film ...

IMAGE TRANSMISSION SYSTEM

The image transmission system, which transmits image data from a transmission side and performs image processing at a reception side, is provided with: an image transmission device that encodes an input image and outputs and a bitstream; an image reception device that receives and decodes the bitstream and performs image processing; a bit precision information generation unit that generates bit precision information for each region in the image; a quantization control unit that controls the quantization step width in a quantization process performed in the image transmission device in accordance with the bit precision information generated by the bit precision information generation unit; and an image processing unit that performs image processing using the decoded image that has been decoded by the image reception device. The bit precision information generation unit switches the method for generating bit precision information in accordance with the processing mode of the image processing unit. 1. An image transmission system that transmits image data from a transmission side and performs image processing on a reception side , the system comprising:an image transmission device that encodes an input image and outputs and transmits a bit stream;an image reception device that receives and decodes the bit stream and performs image processing;a bit precision information generation unit configured to generate bit precision information for each region in the image;a quantization control unit configured to control a quantization step width in a quantization process performed in the image transmission device, in accordance with the bit precision information generated by the bit precision information generation unit; andan image processing unit configured to perform image processing using a decoded image decoded by the image reception device, whereinthe bit precision information generation unit switches methods for generating bit precision information in accordance with a ...

Pld management method and pld management system

The PLD management system includes a PLD management unit that manages the usage status of each of one or more PLDs. The PLD management unit receives a PLD usage request from a request source module which is one of a plurality of processing modules sharing each of the one or more PLDs. when the PLD management unit receives the usage request, the PLD management unit performs control to prevent two or more processing modules including the request source module from utilizing the same PLD at the same time based on a current usage status of a PLD corresponding to the usage request and content of the usage request.

Cleaning method of apparatus for forming amorphous silicon film, and method and apparatus for forming amorphous silicon film

A method of cleaning an apparatus for forming an amorphous silicon film by removing an adhered material from an interior of the apparatus after the amorphous silicon film is formed on a workpiece through supply of a process gas into a reaction chamber of the apparatus includes: removing the adhered material from the interior of the apparatus by supplying the cleaning gas into the reaction chamber; and performing at least one purge process selected from a first purge process of supplying ammonia into the reaction chamber, from which the adhered material has been removed by supplying the cleaning gas into the reaction chamber, and a second purge process of supplying a gas containing hydrogen and oxygen into the reaction chamber, from which the adhered material has been removed by supplying the cleaning gas into the reaction chamber.

MOVEMENT EVALUATION SYSTEM AND METHOD

The present invention is provided to notify a person who makes a movement of a part to be improved in the movement. A movement evaluation system includes: a proficiency degree estimating unit generating a proficiency degree score on the basis of movement data obtained by detecting a movement of a user; an improvement point extracting unit specifying a part of the movement of the user as an improvement point on the basis of the movement data; and an information generating unit generating suggestion information to be presented to the user, on the basis of the improvement point. 1. A movement evaluation system comprising:a proficiency degree estimating unit generating a proficiency degree score on the basis of movement data obtained by detecting a movement of a user;an improvement point extracting unit specifying a part of the movement of the user as an improvement point on the basis of the movement data; andan information generating unit generating suggestion information to be presented to the user, on the basis of the improvement point.2. The movement evaluation system according to claim 1 , further comprising:a feature extracting unit extracting a plurality of kinds of feature amounts from the movement data; anda storage device storing reference data generated by extracting the plurality of kinds of feature amounts from skilled-person movement data,wherein a feature amount of the movement data and a feature amount of the skilled-person movement data correspond to each other,wherein the proficiency degree estimating unit notifies the improvement point extracting unit of a period in which the proficiency degree score corresponds to a predetermined condition as a non-proficient period,wherein the improvement point extracting unit compares the feature amount of the movement data with the feature amount of the skilled-person movement data in the non-proficient period and specifies a feature amount which is apart by a predetermined amount or more as the improvement point, ...

Motion Evaluation System, Motion Evaluation Device, and Motion Evaluation Method

To be capable of efficiently transmitting appropriate information on the motion improvement to a person in motion. A motion evaluation system includes a sensor unit, an information processing device, and an information presentation device. The information processing device includes a communication device, a storage device, and an arithmetic device. The arithmetic device acquires motion data acquired by observing a user through the use of a sensor via the communication device, checks the motion data against information about the correctness of motions in the reference information, determines a state of motion of the user, specifies a motion in a state to be improved as an improvement, check the motion data after the motion corresponding to the improvement against information about busy levels of the user to specify a busy level of the user, and outputs, as improvement suggestion information about the improvement, information with different contents at each of multiple times to an information presentation device based on the improvement and a rule predetermined according to each situation of the busy level. 1. A motion evaluation system comprising:an information processing device,wherein the information processing device includes:a communication device that communicates with a sensor to observe a motion of a user;a storage device that stores reference information defining various states of the motion and various information suggesting improvement of the motion; andan arithmetic device that performs a process to acquire motion data acquired by observing the user through the use of the sensor via the communication device, checks the motion data against information about the correctness of motions in the reference information to determine a state of motion of the user and specify, as an improvement, a motion in a state to be improved among the motions, a process to check the motion data after the motion corresponding to the improvement against information about busy ...

FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS

There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step. 1. A film forming method comprising:an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base;an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; anda film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.2. The method of claim 1 , wherein the organic substance removal step claim 1 , the oxide film removal step claim 1 , and the film forming step are successively formed in a same apparatus.3. The method of claim 1 , wherein the organic substance removal step is performed at a temperature of 200 degrees C. to 350 degrees C.4. The method of claim 1 , wherein the oxide film removal step is performed at a temperature of 25 degrees C. to 200 degrees C.5. The method of claim 1 , wherein the oxide film removal step includes:transforming the oxide film into a reaction product by reacting the oxide film with a halogen-containing gas and a basic gas; andremoving the reaction product by heating.6. The method of claim 1 , wherein a recess pattern is formed on the base.7. A substrate processing apparatus comprising:a processing container configured to accommodate a substrate therein;a gas supply part configured to supply a hydrogen-containing gas and an oxygen-containing gas into the processing container; ...

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

According to one embodiment of the present disclosure, there is provided a substrate processing method including: providing a substrate; forming a seed layer on a surface of the substrate by heating a stage on which the substrate is placed to a first temperature and supplying a first source gas to the substrate; and forming a metal-containing film by heating the stage on which the substrate is placed to a second temperature and supplying a second source gas and a first reducing gas to the substrate on which the seed layer is formed. 1. A substrate processing method comprising:providing a substrate;forming a seed layer on a surface of the substrate by heating a stage on which the substrate is placed to a first temperature and supplying a first source gas to the substrate; andforming a metal-containing film by heating the stage on which the substrate is placed to a second temperature and supplying a second source gas and a first reducing gas to the substrate on which the seed layer is formed.2. The substrate processing method of claim 1 , wherein the seed layer has a higher adsorptivity of the second source gas than the surface of the substrate on which the seed layer is not formed.3. The substrate processing method of claim 2 , wherein the first source gas is a silicon-containing gas.4. The substrate processing method of claim 3 , wherein the first source gas is continuously supplied during the forming the seed layer.5. The substrate processing method of claim 4 , wherein the first reducing gas is a nitrogen-containing gas.6. The substrate processing method of claim 5 , wherein the second source gas is different from the first source gas.7. The substrate processing method of claim 6 , wherein the second source gas is a Ti-containing gas.8. The substrate processing method of claim 1 , wherein the first source gas is continuously supplied during the forming the seed layer.9. The substrate processing method of claim 1 , wherein claim 1 , in the forming the seed layer ...

TOUCH SENSOR UNIT AND MANUFACTURING METHOD THEREOF

The disclosure makes an insulating component and a sensor bracket to be an integrally molded article, simplifies the manufacturing process and cuts down the cost. A sensor holder and a sensor bracket made of a resin are made to be an integrally molded article, wherein the sensor holder inside which a pair of electrodes are arranged, and the sensor bracket made of a resin which holds the sensor holder and is attached to a tailgate. During an operation of filling a molten resin to a cavity, a part of the sensor holder is melted by the molten resin, and thus integrating the sensor holder and the molten resin, therefore, the two components can be structurally and firmly integrated. Accordingly, a touch sensor unit which endures long-term use can be obtained. 1. A touch sensor unit used to detect contact of a blocking , comprising:a hollow insulating component, which deforms elastically due to a stress of an external force;a plurality of electrodes, which are arranged inside the insulating component and contact with each other due to an elastic deformation of the insulating component; anda sensor bracket made of a resin, which holds the insulating component and is attached to an attachment object,wherein the insulating component and the sensor bracket is an integrally molded article.2. The touch sensor unit according to claim 1 , wherein the insulating component comprises:an electrode holder, which holds the plurality of electrodes; anda bracket fixture, which is fixed to the sensor bracket.3. The touch sensor unit according to claim 2 , whereina width of the electrode holder along a direction across an extending direction of the insulating component is the same as a width of the bracket fixture.4. The touch sensor unit according to claim 2 , whereina groove into which the bracket fixture enters is arranged on the sensor bracket.5. The touch sensor unit according to claim 3 , whereina groove into which the bracket fixture enters is arranged on the sensor bracket.6. A ...

COMPUTER SYSTEM

A computer system according to one preferred embodiment of the present invention has a server and a storage subsystem, wherein the server is configured to enable data write to a cache area of the storage subsystem. Further, the server manages the usages of the cache area. When storing data from the server to the cache area, the server determines whether a data-writable area exists in the cache area or not. If there is a writable area, data is stored in the writable area. 1. A computer system comprising a server , and a storage subsystem receiving an access request from the server ,the storage subsystem comprising a nonvolatile storage media configured to preserve a write data from the server, and a memory configured to temporarily store information written from the server;wherein the storage subsystem is configured to notify a configuration information to the server for designating a storing area in the memory to which information from the server is written,the memory comprises a storing area to which information from the server is written, the storing area being configured based on the configuration information acquired from the storage subsystem,the server has a management information related to usages of the storing area,in a state where the server writes the information to the storage subsystem, the server determines an address in the storing area to which information is written based on the management information, andthe server writes the information to the above-determined address in the storing area.2. The computer system according to claim 1 ,wherein the information includes a command, andin a state where the command stored in the storing area is a write command, the storage subsystem reads the write data from the server and stores the write data in the memory, based on a storage position information of the write data in the server included in the write command.3. The computer system according to claim 2 ,wherein in a state where the command is a read ...

Latent additive and composition containing latent additive

A latent additive represented by general formula (1): wherein A is a 5- or 6-membered aromatic or heterocyclic ring; R 1 and R 2 are each hydrogen, halogen, cyano, hydroxyl, nitro, carboxyl, optionally substituted C1-C40 alkyl, C6-C20 aryl, C7-C20 arylalkyl, or C2-C20 heterocyclic ring-containing group; and R 4 is C1-C20 alkyl, C2-C20 alkenyl, C6-C20 aryl, C7-C20 arylalkyl, C2-C20 heterocyclic ring-containing group, or trialkylsilyl.

Vertical Heat Treatment Apparatus

A vertical heat treatment apparatus includes a plurality of gas supply pipes installed in one of left-right-half regions of a reaction vessel and configured to supply a process gas to division regions obtained by dividing a processing region; an exhaust opening formed in a wall of the reaction vessel in the other of the left-right-half regions; and a vacuum exhaust path in communication with the exhaust opening. The plurality of gas supply pipes are installed to extend from an inner wall portion of the reaction vessel at a position lower than the processing region. At least one of the gas supply pipes includes a bent portion formed by bending downward a leading end portion that is extended upward, and a plurality of gas discharge holes are formed at a downstream side from the bent portion. 1. A vertical heat treatment apparatus of performing a heat treatment by supplying process gases to a plurality of substrates , which are held in a shelf fashion by a substrate holder in a vertical reaction vessel that is surrounded by a heating part , the vertical heat treatment apparatus comprising:a plurality of gas supply pipes configured to supply the process gases to a plurality of division regions obtained by dividing a processing region, in which the substrates arranged in a longitudinal direction of the reaction vessel, the plurality of gas supply pipes being installed in one of a left-half region and a right-half region of the reaction vessel when viewed from the top of the reaction vessel;an exhaust opening formed in a wall of the reaction vessel in the other of the left-half region and the right-half region along the longitudinal direction; anda vacuum exhaust path in communication with the exhaust opening,wherein the plurality of gas supply pipes are installed to extend from an inner wall portion of the reaction vessel at a position lower than the processing region in which the substrates are arranged and to extend upward, and each of the plurality of gas supply pipes ...

SILICON FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS

There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film. 1. A method of forming a silicon film , the method comprising:a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; andan etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.2. The method of claim 1 , wherein the film thickness of the silicon film is a film thickness at which no pinhole is generated.3. The method of claim 1 , wherein the film forming step includes:a seed layer forming step of forming a seed layer on a surface of the base by supplying an aminosilane-based gas onto the base; anda first silicon film forming step of forming another silicon film on the seed layer by supplying an amino group-free silane-based gas onto the seed layer.4. The method of claim 3 , further comprising:a second silicon film forming step of supplying a higher-order silane-based gas than the amino group-free silane-based gas used in the first silicon film forming step to the seed layer between the seed layer forming step and the first silicon film forming step.5. The method of claim 1 , wherein concave-convex portions are formed in a surface of the base claim 1 , andthe film forming step includes forming the silicon film on the concave-convex portions of the base in a conformal manner.6. The method of claim 1 , wherein concave-convex portions are formed in a surface of the base claim 1 , andthe etching step includes etching the silicon film formed on the concave-convex portions of the base in a conformal manner.7. The method of claim 1 , wherein the film ...

DATABASE SEARCH SYSTEM AND DATABASE SEARCH METHOD

A database search system receives a command and searches for data, which meets a search condition specified on the basis of the received command, in a whole database which is a database as an entity. The database search system generates a virtual database which is a list of address pointers to the found data and stores the generated virtual database. 1. A database search system comprising:an interface configured to receive a command; anda controller configured to search for data, which meets a search condition specified on the basis of the received command, in a whole database which is a database as an entity, generate a virtual database which is a list of address pointers to the found data, and store the generated virtual database.2. The database search system according to claim 1 , whereinwhen a read source specified on the basis of the received command is a virtual database, or when a virtual database including a search result of data that meets the specified search condition is present, the controller is configured to determine whether data accessed using an address pointer in the virtual database specified as a read source meets the specified search condition.3. The database search system according to claim 2 , whereinthe interface is configured to receive a command from a host system,the database search system further comprises a nonvolatile semiconductor memory in which the whole database is stored, andthe controller is a storage configured to access the nonvolatile semiconductor memory as a data access which uses an address pointer in the virtual database specified as a read source.4. The database search system according to claim 3 , whereinwhen a read source specified on the basis of the received command is a whole database, or when a virtual database including a search result of data that meets the specified search condition is not present, the controller is configured to search for data, which meets the specified search condition, in the whole database ...

TOUCH SENSOR UNIT

The disclosure provides a touch sensor unit. A conductive component is arranged between a pair of electrodes which are arranged inside an insulating tube, and the conductive component includes: a body section, which extends in a longitudinal direction of the insulating tube; and a convex section, which is arranged on an outer circumference of the body section, extends along the longitudinal direction of the body section, and sinks into the pair of electrodes. Short circuit or non-short circuit and so on of the electrodes can be detected by detecting the resistance value of the conductive component. Merely by inserting the conductive component into one end in the longitudinal direction of the electrodes, the pair of electrodes are electrically connected, and only the convex section sinks into the pair of electrodes, therefore the insertion load of the conductive component can be reduced, and the terminal treatment can be simplified. 1. A touch sensor unit , which is used to detect contact of a blocking , comprising:a hollow insulating component, which deforms elastically due to a stress of an external force;a pair of electrodes, which are arranged inside the insulating component, extend spirally along a longitudinal direction of the insulating component, and are placed to be capable of contacting with each other by an elastic deformation of the insulating component; anda conductive component, which is arranged at one end of the longitudinal direction of the pair of electrodes, and electrically connects with the pair of electrodes respectively; a body section, which is arranged between the pair of electrodes, and extends along the longitudinal direction of the insulating component; and', 'a convex section, which is arranged on an outer circumference of the body section, extends along the longitudinal direction of the body section, and sinks into the pair of electrodes., 'wherein the conductive component comprises2. The touch sensor unit according to claim 1 , ...

METHOD AND APPARATUS FOR FORMING SILICON FILM AND STORAGE MEDIUM

A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a Silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a Silicon raw material gas onto the target substrate after the etching. 1. A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed therein , the method comprising:(a) forming a first silicon film to fill the recess by supplying a Silicon raw material gas onto the target substrate;(b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the surface of the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess; and(c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the bottom portion of the recess by supplying a Silicon raw material gas onto the target substrate after the etching.2. The method according to claim 1 , wherein an adsorption layer containing a halogen element is formed on the exposed surface of the insulating film by process (b).3. The method according to claim 1 , wherein the ...

Method and Apparatus for Forming Boron-Doped Silicon Germanium Film, and Storage Medium

A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.

Heat insulation structure and vertical heat treatment apparatus

Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

SEMICONDUCTOR MEMORY DEVICE AND STORAGE APPARATUS COMPRISING SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device comprises a memory element group (one or more semiconductor memory elements) and a memory controller. The memory controller comprises a processor configured to process at least a part of an I/O command from a higher-level apparatus when the part of the I/O command satisfies a predetermined condition, and one or more hardware logic circuits configured to process the entire I/O command when the I/O command does not satisfy the predetermined condition. 1. A semiconductor memory device , comprising:a memory controller including a processor configured to process at least a part of an I/O (Input/Output) command from a higher-level apparatus in a case where the part of the I/O command satisfies a predetermined condition, and one or more hardware logic circuits configured to process the entire I/O command in a case where the I/O command does not satisfy the predetermined condition; anda memory element group that is one or more semiconductor memory elements configured to store data input and output by the memory controller, the data being at least a part of I/O target data associated with the I/O command.2. The semiconductor memory device according to claim 1 , wherein the memory controller comprises a temporary memory area claim 1 , and the case where the part of the I/O command satisfies the predetermined condition is a case where at least a part of the I/O target data is stored in the temporary memory area.3. The semiconductor memory device according to claim 2 , wherein the plurality of hardware logic circuits include: 'a determination unit that is a hardware logic circuit configured to determine, for each of the sub-I/O commands, whether the sub-I/O target data associated with the sub-I/O command is stored in the temporary memory area or not, and', 'a command division unit that is a hardware logic circuit configured to divide the I/O command into a plurality of sub-I/O commands; and'}the sub-I/O command(s) for which the corresponding sub- ...

COMPUTER SYSTEM AND METHOD FOR CONTROLLING COMPUTER

A computer system operates a data processing unit that includes a first memory, an accelerator including a second memory, and a storage device. The computer system receives a processing request for data and analyzes the contents of processing included in the processing request and detects a load of the accelerator. An off-load processing unit acquires the analysis results and the load of the accelerator to make the accelerator execute the processing when a predetermined condition is established. The processor executes the received processing when the predetermined condition is not established. The off-load processing unit makes the accelerator secure a storage area in the second memory, makes the storage device transmit the data, and the accelerator executes the processing. The processing execution unit makes the processor secure a storage area in the first memory, makes the storage device transmit the data, and the processor executes the processing. 1. A computer system that operates a data processing unit , the computer system comprising:a processor;a first memory which is connected to the processor;an accelerator which includes a second memory; anda storage device which is connected to the processor and the accelerator to store data,wherein the data processing unit includesa processing request reception unit which receives a processing request for the data,a processing content analysis unit which analyzes contents of processing included in the processing request,a load detection unit which detects a load of the accelerator,an off-load processing unit which acquires analysis results of the contents of the processing and the load of the accelerator to make the accelerator execute the received processing when a predetermined condition is established, anda processing execution unit which makes the processor execute the received processing when the predetermined condition is not established,wherein the off-load processing unit makes the accelerator secure a storage ...

INFORMATION PROCESSING SYSTEM, STORAGE APPARATUS AND STORAGE DEVICE

A purpose is to speed up a write process with a parity update. An information processing system includes storage devices constituting a RAID group, coupled to one bus and communicating with each other. Each of the storage devices includes a device controller and a storage medium for storing data. The storage devices include a first storage device storing old data and a second storage device storing old parity associated with the old data. A first device controller of the first storage device creates intermediate parity based on the old data and new data for updating the old data and transmit the intermediate parity to the second storage device specifying the second storage device storing the old parity associated with the old data, and a second device controller of the second storage device creates new parity based on the intermediate parity and the old parity. 1. An information processing system comprising:a plurality of storage devices constituting a RAID group, coupled to a bus and configured to communicate with each other,wherein each of the plurality of storage devices includes a device controller and a storage medium for storing data,wherein the plurality of storage devices include a first storage device storing old data and a second storage device storing old parity associated with the old data,wherein a first device controller of the first storage device is configured to create intermediate parity based on the old data and new data for updating the old data and transmit the intermediate parity to the second storage device specifying the second storage device storing the old parity associated with the old data,wherein a second device controller of the second storage device is configured to create new parity based on the intermediate parity and the old parity,wherein each of the plurality of storage devices is configured to receive RAID management information,wherein the RAID management information contains information of a RAID level of the RAID group, a ...

TOUCH SENSOR UNIT AND METHOD OF MANUFACTURING THE SAME

In a touch sensor unit, since a base portion is provided with a hard resin portion for holding a curved state of a sensor portion deformed in conformity to a curved shape of a door frame of a tail gate, even when the base portion is not fixed to the tail gate, it is possible to hold the curved state of the base portion. Therefore, after the curved base portion is fixed to the tail gate with a double-sided adhesive tape, even if the double-sided adhesive tape is degraded with age, a restoring force of the sensor portion does not remove the double-sided adhesive tape. 1. A touch sensor unit which is used for detection of contact with a blockage , comprising:a hollow sensor portion which is elastically deformed by an external load;electrodes which are provided inside the sensor portion, and brought into contact with each other by elastic deformation of the sensor portion;an elastic base portion integrally provided with the sensor portion, the elastic base portion extending along a longitudinal direction of the sensor portion, the elastic base portion being fixed the sensor portion to a fixing object; anda curvature holding portion provided on the elastic base portion, and configured to hold a curved state of the sensor portion with the sensor portion deformed in conformity to a curved shape of the fixing object.2. The touch sensor unit according to claim 1 , whereinthe curvature holding portion is a resin portion provided in a notched portion on an inner circumferential side of the curved elastic base portion.3. The touch sensor unit according to claim 2 , whereinthe resin portion is higher in hardness than the elastic base portion.4. The touch sensor unit according to claim 1 , whereinthe curvature holding portion is a cored bar provided inside the elastic base portion, and plastically deformed in conformity to the curved shape of the fixing object.5. The touch sensor unit according to claim 1 , whereinthe electrodes is a pair of electrodes helically provided inside ...

DATA MEMORY DEVICE

A data memory device has a command transfer direct memory access (DMA) engine configured to obtain a command that is generated by an external apparatus to give a data transfer instruction from a memory of the external apparatus; obtain specifics of the instruction; store the command in a command buffer; obtain a command number that identifies the command being processed; and activate a transfer list generating DMA engine by transmitting the command number depending on the specifics of the instruction of the command. The transfer list generating DMA engine is configured to: identify, based on the command stored in the command buffer, an address in the memory to be transferred between the external apparatus and the data memory device; and activate the data transfer DMA engine by transmitting the address to the data transfer DMA engine which then transfers the data to/from the memory based on the received address. 1. A data memory device , comprising:a storage medium configured to store data;a command buffer configured to store a command that is generated by an external apparatus to give a data transfer instruction;a command transfer direct memory access (DMA) engine, which is coupled to the external apparatus and which is a hardware circuit;a transfer list generating DMA engine, which is coupled to the external apparatus and which is a hardware circuit; anda data transfer DMA engine, which is coupled to the external apparatus and which is a hardware circuit,wherein the command transfer DMA engine is configured to:obtain the command from a memory of the external apparatus;obtain specifics of the instruction of the command;store the command in the command buffer;obtain a command number that identifies the command being processed; andactivate the transfer list generating DMA engine by transmitting the command number depending on the specifics of the instruction of the command,wherein the transfer list generating DMA engine is configured to:identify, based on the command ...

CODING METHOD AND CODING DEVICE

In related art, it is not considered that the image quality of video to be transmitted can be improved in consideration of a delay time in video transmission. An image information coding method includes an analyzing step of analyzing an input image, a quantization parameter calculating step of calculating a quantization parameter by using analysis results in the analyzing step, and an encoding step of encoding the input image by using the quantization parameter calculated in the quantization parameter calculating step, wherein a first region to be analyzed in the analyzing step has a variable size. 1. A coding method comprising:an analyzing step of analyzing an input image;a quantization parameter calculating step of calculating a quantization parameter by using analysis results in the analyzing step; andan encoding step of encoding the input image by using the quantization parameter calculated in the quantization parameter calculating step, whereina first region to be analyzed in the analyzing step has a variable size.2. The coding method according to claim 1 , whereinthe size of the first region is changed based on a delay time set in video transmission performed by using the coding method.3. The coding method according to claim 1 ,whereinthe size of the first region is smaller than a size of one frame of the input image.4. The coding method according to claim 1 , whereinthe analyzing step includesa first analyzing step of analyzing the first region, anda second analyzing step of analyzing a second region which is a part of the first region.5. The coding method according to claim 4 , whereinin the first analyzing step, complexity of the image in the first region is calculated, andin the second analyzing step, complexity of the image in the second region is calculated.6. The coding method according to claim 4 , whereinthe analyzing step includes a third analyzing step of extracting a feature amount of the image in the second region.7. The coding method according to ...

TOUCH SENSOR UNIT

In a touch sensor unit, a bracket body is provided with a first protruding portion which is disposed on a vehicle interior side of a base portion, a gap portion is provided between the first protruding portion and the base portion, the height from the bracket body to the distal end of the first protruding portion is smaller than the height from the bracket body to the sensor portion. Therefore, when the sensor portion and the base portion are elastically deformed by contact with a blockage, the elastically deformed sensor portion and base portion enter the gap portion, thereby preventing the sensor portion and the base portion from being pressed against the corner portion of the bracket without increasing the rigidity of the sensor portion and the base portion. 1. A touch sensor unit which is used for detection of contact with a blockage , comprising:a hollow sensor portion which is elastically deformed by an external load;electrodes which are provided inside the sensor portion, and brought into contact with each other by elastic deformation of the sensor portion;an elastic base portion integrally provided with the sensor portion, the elastic base portion extending along a longitudinal direction of the sensor portion;an attachment body to which the elastic base portion is attached;a protruding portion provided to the attachment body and disposed on one side of the elastic base portion; anda gap portion provided between the protruding portion and the elastic base portion,wherein a height from the attachment body to a distal end of the protruding portion is smaller than a height from the attachment body to the sensor portion.2. The touch sensor unit according to claim 1 , whereina width of the sensor portion along a direction intersecting with a height direction of the protruding portion is smaller than a width of the elastic base portion along a direction intersecting with the height direction of the protruding portion, andan inclined surface is provided between the ...

PRISMATIC SECONDARY BATTERY, AND ASSEMBLED BATTERY AND VEHICLE INCLUDING THE SAME

A prismatic secondary battery includes an electrode body including a positive-electrode sheet and a negative-electrode sheet, a prismatic exterior body that accommodates the electrode body, a sealing plate that seals an opening of the prismatic exterior body, and a negative terminal electrically connected to the negative-electrode sheet. The prismatic secondary battery is arranged such that the sealing plate extends in the vertical direction during use of the prismatic secondary battery. The positive-electrode sheet is electrically connected to the sealing plate. The sealing plate has a recessed portion on an outer surface and a terminal insertion hole formed in the recessed portion. The negative terminal is inserted in the terminal insertion hole. An outer insulating member is disposed between the negative terminal and the sealing plate. The sealing plate has a first groove extending to an end of the recessed portion in the longitudinal direction of the sealing plate. 1. A prismatic secondary battery comprising:an electrode body including a first electrode sheet and a second electrode sheet having a polarity opposite to a polarity of the first electrode sheet;a prismatic exterior body that has an opening and that accommodates the electrode body;a sealing plate that seals the opening; anda terminal electrically connected to the first electrode sheet,wherein the prismatic secondary battery is arranged such that the sealing plate extends in a vertical direction during use of the prismatic secondary battery,wherein the second electrode sheet is electrically connected to the sealing plate,wherein a recessed portion is formed on an outer surface of the sealing plate,wherein a terminal insertion hole is formed in the recessed portion,wherein the terminal is inserted in the terminal insertion hole,wherein an outer insulating member is disposed between the terminal and the sealing plate, andwherein the sealing plate has a groove extending to an end of the recessed portion ...

PRISMATIC SECONDARY BATTERY, AND ASSEMBLED BATTERY AND VEHICLE INCLUDING THE SAME

A prismatic secondary battery includes an electrode body including a positive-electrode sheet and a negative-electrode sheet, a prismatic exterior body that accommodates the electrode body, a sealing plate that seals an opening of the prismatic exterior body, and a negative terminal electrically connected to the negative-electrode sheet. The positive-electrode sheet is electrically connected to the sealing plate. The sealing plate has a recessed portion on an outer surface and a terminal insertion hole formed in the recessed portion. The negative terminal is inserted in the terminal insertion hole. An outer insulating member is disposed between the negative terminal and the sealing plate. The sealing plate has a first groove extending to an end of the recessed portion in the longitudinal direction of the sealing plate. 1. A prismatic secondary battery comprising:an electrode body including a first electrode sheet and a second electrode sheet having a polarity opposite to a polarity of the first electrode sheet;a prismatic exterior body that has an opening and that accommodates the electrode body;a sealing plate that seals the opening; anda terminal electrically connected to the first electrode sheet,wherein the second electrode sheet is electrically connected to the sealing plate,wherein the sealing plate has a recessed portion formed on an outer surface and a terminal insertion hole formed in the recessed portion,wherein the terminal is inserted in the terminal insertion hole,wherein an outer insulating member is disposed between the terminal and the sealing plate, andwherein the sealing plate has a groove extending to an end of the recessed portion in a longitudinal direction of the sealing plate.2. The prismatic secondary battery according to claim 1 ,wherein a gas exhausting valve is formed in the sealing plate,wherein a current collector electrically connected to the second electrode sheet is connected to an inner surface of the sealing plate,wherein a distance ...

Method of manufacturing semiconductor device, heat treatment apparatus, and storage medium

A method of manufacturing a semiconductor device includes: loading a substrate into a process container after dry-etching a portion of a silicon film formed in a recess on the substrate; performing etching to partially or entirely remove the silicon film remaining on a side wall inside the recess by supplying an etching gas selected from a hydrogen bromide gas and a hydrogen iodide gas into the process container of a vacuum atmosphere while heating the substrate; subsequently forming a silicon film inside the recess; and heating the substrate to increase a grain size of the silicon film.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MANUFACTURING APPARATUS

There is provided a method of manufacturing a semiconductor device, which includes: forming a silicon film inside a recess formed in a surface of a workpiece by supplying a film forming gas containing silicon to the workpiece; subsequently, supplying a process gas, which includes a halogen gas for etching the silicon film and a roughness suppressing gas for suppressing roughening of a surface of the silicon film after being etched by the halogen gas, to the workpiece; etching the silicon film formed on a side wall of the recess to enlarge an opening width of the recess by applying thermal energy to the process gas and activating the process gas; and subsequently, filling silicon into the recess by supplying the film forming gas to the workpiece and depositing silicon on the silicon film remaining in the recess. 1. A method of manufacturing a semiconductor device , comprising:forming a silicon film inside a recess formed in a surface of a workpiece by supplying a film forming gas containing silicon to the workpiece;subsequently, supplying a process gas, which includes a halogen gas for etching the silicon film and a roughness suppressing gas for suppressing roughening of a surface of the silicon film after being etched by the halogen gas, to the workpiece;etching the silicon film formed on a side wall of the recess to enlarge an opening width of the recess by applying thermal energy to the process gas and activating the process gas; andsubsequently, filling silicon into the recess by supplying the film forming gas to the workpiece and depositing silicon on the silicon film remaining in the recess.2. The method of claim 1 , wherein the halogen gas is a chlorine gas.3. The method of claim 1 , wherein the etching includes heating the workpiece at a range of 250 to 450 degrees C.4. The method of claim 1 , wherein the process gas includes the roughness suppressing gas and the halogen gas so that a ratio of a flow rate of the roughness suppressing gas to a flow rate of the ...

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

A substrate processing method in substrate processing apparatus comprises repeating cycle including: supplying source gas into process container causing the source gas to be adsorbed to substrate; exhausting excess source gas from the process container; supplying reaction gas into the process container causing the reaction gas to react with the source gas; and exhausting excess reaction gas, wherein at least one of a gap width between placement stage and member forming processing space between the member and the stage and degree of opening of pressure adjustment valve in at least one of the supplying the source gas and the supplying the reaction gas is smaller than at least one of a gap width between the stage and the member and the degree of opening of the pressure adjustment valve in at least one of the exhausting the excess source gas and the exhausting the excess reaction gas, respectively. 1. A substrate processing method in a substrate processing apparatus comprising: a process container including a placement stage configured to place a substrate thereon and be capable of moving up or down , a member configured to form a processing space between the member and the placement stage , a source gas supply configured to supply a source gas into the process container , a reaction gas supply configured to supply a reaction gas into the process container , and an exhauster including a pressure adjustment valve configured to be capable of adjusting a degree of opening thereof , and exhaust a gas in the process container , the method comprises repeating a cycle , the cycle including:supplying the source gas into the process container causing the source gas to be adsorbed to the substrate;exhausting excess source gas from the process container;supplying the reaction gas into the process container causing the reaction gas to react with the source gas; andexhausting excess reaction gas from the process container,wherein at least one of a gap width between the placement ...

Resin modifier and method for producing same

Processing apparatus

A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth. 1. (canceled)2. A plasma processing apparatus , comprising: a controller;an etching chamber having a gas inlet, a gas outlet, and a plasma generator;a deposition chamber;a conveyor that includes a structure that is sized to hold a substrate thereon and controllably convey the substrate between the etching chamber and the deposition chamber, the substrate including a silicon-containing film with a mask, whereinthe controller is configured to(a) control the conveyor to move the substrate into the etching chamber;(b) operate the gas inlet to provide fluorine-containing gas into the etching chamber and control the plasma generator to generate plasma from the fluorine-containing gas and etch a recess in the silicon-containing film through the mask to a first depth, a sidewall of the recess including a carbon film that is thicker at a top of the recess than at a bottom of the recess, said first depth being less than a depth at which bowing occurs on the side wall of the recess;(c) control the conveyor to move the substrate to the deposition chamber, and control the deposition chamber to form a substantially uniformly thick protection film at least on the mask, the carbon film, and the side wall of the recess; and(d) control the conveyor to move the substrate back to the etching chamber, and control the etching chamber to etch the recess with another ...

Resin modifier and method for producing same

Disclosed is a resin modifier containing a polymer comprising a monomer unit having an epoxy group. In a 13 C NMR spectrum of the polymer measured in deuterated orthodichlorobenzene to which tetramethylsilane is added, a signal X 1 at a chemical shift of 69.4 ± 0.5 ppm and a signal X 2 at a chemical shift of 75.1 ± 0.5 ppm are observed when a chemical shift of a signal attributed to tetramethylsilane is taken as 0 ppm.

Colored photosensitive composition

【課題】耐熱性に優れた着色感光性組成物（着色アルカリ現像性感光性組成物）を提供すること。【解決手段】一般式（１）で表される潜在性酸化防止剤、並びに、シアノスチレン化合物、トリアリールメタン化合物、及びシアニン化合物の群から選択される有機色素少なくとも一種、好ましくはシアノスチレン化合物として一般式（２）で表される化合物、トリアリールメタン化合物として、一般式（８）で表される化合物、シアニン化合物として一般式（９）〜（１２）の何れかで表される化合物を含有する着色感光性組成物。【選択図】なし

Ic card

(57)【要約】 【課題】 リーダライタに対して複数のＩＣカードを収 容し、ＩＣカードにその電力受信用アンテナでリーダラ イタから送信した動作電力を受信させるＩＣカードシス テムのＩＣカードにおいて、浪費される電力の削減等を 実現する。 【解決手段】 ＩＣカード１では、リーダライタから送 信された電力を受信するに際して、電力消費量が少ない 処理状況でスイッチ切替手段６がスイッチＳＷ１を開状 態にすることにより、電力受信用アンテナ２の感度を低 下させて受信電力を低下させる。なお、スイッチ切替手 段６とスイッチＳＷ１とから受信電力制御手段が構成さ れる。また、例えばスイッチＳＷ１が開状態の時に電力 消費量が多い処理を行う場合に、バッテリＢの電力でス イッチ切替手段６がスイッチＳＷ１を閉状態にして通常 の電力を受信させる。なお、上記構成の他に、情報を通 信するための情報通信用アンテナ３や、処理を制御する 制御部４や、データを記憶するメモリ５が備えられてい る。

Cyanine compound, optical filter using the compound and optical recording material

Disclosed is a cyanine compound represented by general formula (I) below .Also disclosed are an optical filter using the compound and an optical recording material.

Production of cushion body

Method and apparatus of forming silicon film

本發明旨在提供一種矽膜之形成方法及其形成裝置。 其中，本發明之矽膜之形成方法，在於表面形成有溝槽之被處理體之該溝槽，形成矽膜，其特徵在於包含：第1成膜程序，形成第1矽層，令其埋入該被處理體之該溝槽；摻雜程序，在於該第1成膜程序成膜之該第1矽層之表面附近，摻雜雜質；種晶層形成程序，在於該摻雜程序摻雜雜質之該第1矽層上，形成種晶層；及第2成膜程序，在於該種晶層形成程序形成之種晶層上，形成含有雜質之第2矽層。

Silicon film deposition method, thin film deposition method, and cross section shape controlling method

【課題】 更なる薄膜化の要求に対しても対応可能であり、かつ、表面ラフネスの精度をも改善することが可能なシリコン膜の成膜方法を提供すること。 【解決手段】 被処理面上に、分子式中にシリコンを２つ以上含む高次アミノシラン系ガスを供給し、被処理面上にシリコンを吸着させてシード層を形成する工程（ステップ１）と、シード層上に、アミノ基を含まないシラン系ガスを供給し、シード層上にシリコンを堆積させてシリコン膜を形成する工程（ステップ２）と、を備え、ステップ１工程における処理温度を３５０℃以下室温（２５℃）以上の範囲とする。 【選択図】図１

Driving apparatus for opening and closing body for vehicle

A hypocycloid reducer 70 for reducing rotation of a flat motor 60 to output the speed-reduced rotation to a drum is provided between the drum and the flat motor 60 , a rotor shalt member 65 which is rotated with the same rotation number as the flat motor 60 is axially aligned with the drum is provided on the same side as the flat motor 60 . An output rotation body 74 for outputting the speed-reduced rotation is axially aligned with the drum and provided on the same side as the drum. Since the rotor shaft member 65 and the output rotation body 74 are axially aligned with the drum, turning force can be transmitted bi-directionally between the rotor shaft member 65 and the output rotation body 74 . Therefore, it is possible to eliminate an electromagnetic clutch to reduce the driving apparatus in size and weight, and since wires and control logic of the electromagnetic clutch are not needed for the driving apparatus, the driving apparatus can be reduced in production cost.

Treatment of exhaust gas

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Light-diffusing resin composition and light-diffusing sheet using same

Pipeline processor

(57)【要約】 【課題】 ＲＷＵ（リードライトユニット）から無線等 で電力をもらう非接触ＩＣカードを持ってＲＷＵのゲー トを通過するとき、一度の通過で複数回のゲート通過処 理を行わないようにする。 【解決手段】 ＲＷＵが非接触ＩＣカードからの応答を 受信したとき（STEP２０２）、前回の応答時間からＴ以 上の時間が経過しているかを調べ（STEP２０４）、経過 していなければ不処理通知を送信して処理を終わる（ST EP２０５）。Ｔ以上の時間が経過していれば、認証処理 （STEP２０６）及びゲート通過処理（STEP２０７）を行 う。こうしてゲート通過中に受信可能な状態と不可能な 状態が繰り返しても、１回だけゲート通過処理を行うこ とができる。

Cyanine compound, optical recording material utilizing the compound, and optical recording medium

Optical filter