25-06-2015 дата публикации
Номер: US20150179501A1
Принадлежит:
Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids. After curing, the resultant dielectric layer can undergo wet chemical, thermal, and/or plasma treatment, for instance, to modify at least one of its dielectric properties, density, and/or etch rate. 1. An integrated circuit comprising:a semiconductive substrate having first and second semiconductive fins extending from an upper surface thereof and a trench formed between the first and second semiconductive fins, wherein the trench has a width less than or equal to about 30 nm; anda dielectric layer formed over the semiconductive substrate, wherein the dielectric layer partially fills the trench, the dielectric layer extending from the upper surface of the semiconductive substrate to a point below an active portion of at least one of the first and/or second semiconductive fins.2. The integrated circuit of claim 1 , wherein the trench has a height-to-width aspect ratio in the range of about 10:1 to 40:1.3. The integrated circuit of claim 1 , wherein the trench has a width of 20 nm or less.4. The integrated circuit of claim 1 , wherein the dielectric layer comprises at least one of an oxide claim 1 , a nitride claim 1 , and/or a carbide.5. The ...
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