21-05-2015 дата публикации
Номер: US20150136594A1
Принадлежит:
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10atoms/cm, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by HO or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor. 1. A sputtering target comprising:a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,{'sup': 16', '3, 'wherein a concentration of hydrogen atoms contained in the sintered body is lower than 1×10atoms/cm.'}2. The sputtering target according to claim 1 , wherein the sintered body is a sintered body of indium oxide claim 1 , gallium oxide claim 1 , and zinc oxide.3. The sputtering target according to claim 1 , further comprising a silicon oxide claim 1 , wherein the silicon oxide is added to the sputtering target at 0.1 wt % to 20 wt % inclusive.4. The sputtering target according to claim 1 , wherein the sputtering target has a filling rate of 95% to 99.9% inclusive.5. A sputtering target comprising:a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,{'sup': 19', '3, 'wherein a concentration of hydrogen atoms contained in the sintered body is 5×10atoms/cmor less.'}6. The sputtering target according to claim 5 , wherein the sintered body is a sintered body of indium oxide claim 5 , gallium oxide claim 5 , and zinc oxide.7. The sputtering target according to claim 5 , further comprising a silicon oxide claim 5 , wherein the silicon oxide is added to the sputtering target at 0.1 wt % to 20 wt % inclusive.8. The sputtering target according to claim 5 , wherein the sputtering target ...
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