CONNECTING DEVICE FOR A BRUSH D'ESSUIE-ICE AND BRUSH D'ESSUIE NOZZLE INCLUDING THE DEVICE

Roaming mobile communication system and its method

DEVICE OF CONNECTION FOR a BRUSH Of WINDSCREEN WIPER AND BRUSH Of WINDSCREEN WIPER INCLUDING/UNDERSTANDING THIS DEVICE

Dans un dispositif de raccordement (20), un élément de base (21) comporte une partie d'assemblage (21b), à laquelle un crochet (11a) d'un bras d'essuie-glace (11) configuré selon une forme en U est conçu pour être monté après assemblage de l'élément de base (21) à un balai d'essuie-glace (12). Un élément de verrouillage (22) est relié rotatif à l'élément de base (21) et est conçu pour s'engager avec une surface périphérique extérieure arquée (11c) du crochet (11a) après montage du crochet (11a) dans la partie d'assemblage (21b). L'élément de verrouillage (22) comporte une partie d'engagement (22e) qui est conçue pour s'engager avec la surface périphérique extérieure arquée (11c) du crochet (11a) afin d'exercer une force élastique sur la surface périphérique extérieure arquée (11c) du crochet (11a). La force élastique de la partie d'engagement (22e) s'exerce sous forme de force de rotation dans une direction de verrouillage de l'élément de verrouillage (22) sur la surface périphérique extérieure ...

APPARATUS FOR THE CONTROL OF LIGHTING FOR LIGHTING DEVICE FOR VEHICLES

Purifying method and device for harmful gas

CONTROLLER Of LIGHTING FOR DEVICE Of LIGHTING INTENDS FOR the VEHICLES

L'appareil (10) de commande d'éclairage pour dispositif d'éclairage destiné à des véhicules peut contribuer aux économies d'énergie et empêcher la détérioration d'une source de lumière à semiconducteur, tout en maintenant des caractéristiques de sécurité de conduite. Lorsqu'une borne d'entrée passe à un niveau bas alors que le véhicule est à l'arrêt, un transistor PNP (58) devient conducteur, si bien qu'un courant de source I1 passe dans la borne de détection de courant (32), un régulateur de commutation (12) allume une diode d'émission de lumière (16) dans des conditions d'atténuation de faisceau de 70 % en fonction du degré d'émission de lumière susceptible de satisfaire une distribution d'intensité lumineuse définie par la loi, lorsqu'un faisceau de route est allumé, la borne d'entrée devient un niveau bas, un transistor PNP (60) devient conducteur, un courant de source (12) passe dans la borne de détection de courant, si bien que le degré d'émission de lumière de la diode d'émission ...

LASER WELDING APPARATUS, ITS PREVENTIVE MAINTENANCE METHOD FOR INSIDE OF A NUCLEAR REACTOR PLANT, AND APPARATUS FOR LASER CUTTING AT.

L'appareil de soudage au laser comprend une tête de soudage et un appareil de balayage de tête de soudage. Une lentille de collimation installée sur un corps de tête de la tête de soudage est agencée face à une face d'extrémité de fibres optiques. La tête de soudage comprend uniquement la lentille de collimation en tant que lentille et la longueur est raccourcie.

Switching device for fog light of vehicle, has lighting switch knob and demister switch knob, where demister switch knob is returned to switch position by spring of rotation knob returning unit

Un coulisseau (50) comprenant une protubérance d'encliquetage (57) est prévu entre un bouton d'interrupteur d'éclairage (20) et un bouton d'interrupteur d'antibrouillard (60). Lorsque le bouton d'interrupteur d'éclairage (20) est dans une position phare (ML2) ou une position arrière (ML1), le coulisseau (50) est déplacé jusqu'au côté du bouton d'interrupteur d'antibrouillard (60) par un mécanisme de came (32, 59) pour mettre la protubérance d'encliquetage (57) en prise avec une bille d'encliquetage (65) d'un dispositif de retenue de bille (64) du bouton d'interrupteur d'antibrouillard (60), permettant de sélectionner/maintenir la position d'allumage du bouton d'interrupteur d'antibrouillard (60). Lorsque le bouton d'interrupteur d'éclairage (20) est éteint, le coulisseau (50) est déplacé jusqu'au côté du bouton d'interrupteur d'éclairage (20) pour être séparé de la bille d'encliquetage (65), et pour remettre le bouton d'interrupteur d'antibrouillard (60) également dans la position d'arrêt ...

PILOT CIRCUIT OF DEVICE TRANSMITTING LIGHT AND FIRE OF VEHICLE USING It

Un circuit de pilotage de dispositif émetteur de lumière (2) inclut : une unité de conversion de puissance (10) pour convertir la puissance électrique d'entrée selon un courant de sortie prédéterminé IL ; une unité de détection de température (30) pour détecter une température interne TD d'un boîtier qui loge le circuit de pilotage ; une unité de régulation (40) qui a) détecte si une température TL du dispositif émetteur de lumière a atteint une première température prédéterminée TLmax sur la base de TD, d'IL et d'un coefficient d'augmentation de température α en connexion avec IL, α étant établi à l'avance comme suit : TL = TD + α*IL ; et b) génère un signal de régulation pour réduire un courant de sortie prédéterminé IL0 pour que TL n'excède pas TLmax lorsqu'un résultat de la détection indique que TL a atteint TLmax ; et une unité de commande (50) pour commander IL0 conformément au signal de régulation.

SEAL MEMBER AND WATERPROOF CONNECTOR

Un joint (30) destiné à être monté sur une partie arrière d'un boîtier 20 et qui comporte des orifices de joint (32) configurés afin de permettre le passage à travers de câbles (26) raccordés à des parties arrière de raccords de borne (24) d'une manière étanche au liquide. Le joint (30) comporte un corps (31) constituant des zones arrière (32R) des orifices de joint (32) et comportant une lèvre périphérique externe (37) formée sur une périphérie externe. Une zone entre des périphéries internes des orifices de joint (32) et la lèvre périphérique externe (37) définit une partie élastique pleine (39). Des partie suiveuses (40) s'étendent vers l'avant de la lèvre périphérique externe (37) à partir d'une surface avant du corps (31). Les parties suiveuses (40) constituent des zones avant (32F) des orifices de joint (32) et peuvent être déformées de manière élastique dans des directions coupant une direction de pénétration des orifices de joint (32).

VERFAHREN ZUR HERSTELLUNG EINER DURCHSICHTIGEN POLYPROPYLENFOLIE UND DURCHSICHTIGE POLYPROPYLENFOLIE

Regler, Temperaturregler und Heizungsregler

Kondensatorentladeverfahren zum Verhindern von Nachbildern in einer Flüssigkristallanzeige mit aktiver Matrix

Pressure-proof balloon

Feedforward amplifer and feedward magnifying method

餐具清洗干燥机

... 本发明提供一种餐具清洗干燥机，其包括清洗仓，该清洗仓设置于框体内部，在该清洗仓的内部，接纳餐具；清洗泵，该清洗泵设置于该清洗仓的底壁下方，以便朝向该清洗仓内部喷射水；送风通路，该送风通路在该框体内部的前方，具有进气口，并送风出口开设在清洗仓内部；底部盖，该底部盖按照覆盖上述清洗泵的方式设置，其中，上述底部盖的内部和上述进气口连通，在该底部盖上，在朝向进气口流动的空气流通过上述清洗泵附近的位置，设置有通气用的开口。 ...

Phase difference film, laminated phase difference film and liquid crystal display device using same

Hair care compositions comprising optical brighteners and hair conditioning agents

Communication system

Phase difference film, phase difference film composite and liquid crystal display device using same

Method for Producing Thermoelectric Module

A method for producing a thermoelectric module comprises steps of positioning electrodes () on a pair of current-supplying/pressing members () arranged to face each other, at their surfaces facing each other; arranging a plurality of thermoelectric elements () to be interposed between the electrodes (); and bonding the electrodes () and the thermoelectric elements () by supplying an electric current to pass through the electrodes () and the thermoelectric elements () while pressing the electrodes () and the thermoelectric elements () by means of the current-supplying/pressing members (), wherein the method further comprises a step of forming an intermediate layer () containing an electroconductive metal powder and having elasticity, between each of the electrodes () and the thermoelectric element () to be bonded thereto. 1. A method for producing a thermoelectric module , comprising steps of:positioning electrodes on a pair of current-supplying/pressing members arranged to face each other, at their surfaces facing each other;arranging a plurality of thermoelectric elements to be interposed between the electrodes; andbonding the thermoelectric elements and the electrodes by supplying an electric current to pass through the electrodes and the thermoelectric elements while pressing the electrodes and the thermoelectric elements by means of the current-supplying/pressing members,wherein the method further comprises a step of forming an intermediate layer containing an electroconductive metal powder and having elasticity, between each of the electrodes and the thermoelectric element to be bonded thereto.2. The method for producing a thermoelectric module according to claim 1 , wherein the intermediate layer is made from a paste-form bonding material containing the metal powder.3. The method for producing a thermoelectric module claim 1 , according to claim 1 , wherein the metal powder is powder of a metal having high diffusivity.4. The method for producing a ...

SEMICONDUCTOR SUBSTRATE CUTTING METHOD

A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line. 18-. (canceled)9. A semiconductor substrate cutting method for cutting a semiconductor substrate having a front face formed with a plurality of functional devices into individual functional devices , so as to manufacture a semiconductor device comprising at least one of the functional devices , the method comprising the steps of:attaching a protective member to the front face of the semiconductor substrate, such that the functional devices are covered;irradiating the semiconductor substrate with laser light while positioning a light-converging point within the semiconductor substrate with a rear face of the semiconductor substrate acting as a laser light incident face after attaching the protective member, so as to form a plurality of modified regions, each modified region forming a starting point region for cutting along each of a plurality of lines along which the semiconductor substrate is to be cut, respectively, the lines set like a grid running between neighboring functional devices, inside by a predetermined distance from the laser light incident face, and cutting the semiconductor substrate into a plurality of semiconductor chips from the starting point regions along each ...

Projection display device

A projection display device includes: an aperture part which narrows light traveling toward an imager; a control part which controls the aperture part; a detection part which detects brightness of an image to be projected; and a determination part which determines whether the image is a still image or a moving image. In this arrangement, the control part operates the aperture part so as to narrow the light when the brightness of the image detected by the detection part is darker than predetermined brightness, and operates the aperture part so as to further narrow the light when the brightness of the image detected by the detection part becomes darker than the predetermined brightness. In addition, the control part sets the predetermined brightness for operating the aperture part so as to be darker when the image is the still image than when the image is the moving image.

METHOD FOR CUTTING PROCESSING TARGET

A rear face of an object to be processed A and a front face of an object to be processed for separation A are bonded to each other by anode bonding, whereby a fracture generated in a thickness direction of the object for separation A from a molten processed region acting as a start point reaches a front face of the object A continuously without substantially changing its direction. Then, after cutting the objects A, A, the object A is removed from the object A, so as to yield chips 1. An object cutting method comprising the steps of:irradiating, in a state where a first-side end face of a sheet-like first object to be processed and a second-side end face of a sheet-like second object to be processed are bonded to each other, the first object with laser light, so as to form a modified region in the first object along a line to cut for cutting the second object into a plurality of chips;generating a stress in the first object so as to cause a fracture generated from the modified region acting as a start point to reach a second-side end face of the first object and a first-side end face of the second object and cut the second object along the line; andremoving cut pieces of the first object from cut pieces of the second object, so as to yield the chips.2. An object cutting method according to claim 1 , wherein the first-side end face of the first object and the second-side end face of the second object are bonded to each other by anode bonding.3. An object cutting method according to claim 1 , wherein the first-side end face of the first object and the second-side end face of the second object are bonded to each other by surface-activated direct bonding.4. An object cutting method according to claim 1 , wherein the first object is irradiated with the laser light while using the second-side end face of the first object as a laser light entrance surface.5. An object cutting method according to claim 1 , wherein the stress is generated in the first object by expanding an ...

METHOD FOR CUTTING OBJECT TO BE PROCESSED

A silicon substrate has a main face in a (100) plane, whereby a fracture generated from a molten processed region acting as a start point extends in a cleavage direction of the silicon substrate (a direction orthogonal to the main face of the silicon substrate ). Here, a rear face of an object to be processed A and a front face of an object to be processed for separation A are bonded to each other by anode bonding, whereby the fracture reaches a front face 1of the object A continuously without substantially changing its direction. When generating a stress in the object for separation A, the fracture has reached a rear face of the object for separation A and thus easily extends toward the object A. 1. An object cutting method comprising the steps of:bonding a first-side end face of a first sheet-like object to be processed comprising a silicon substrate having a main face in a (100) plane and a second-side end face of a second sheet-like object to be processed such that the second-side end face opposes the main face;irradiating the first object with laser light so as to form a molten processed region within the silicon substrate along a line to cut for the second object and cause a fracture generated from the molten processed region acting as a start point to reach a second-side end face of the first object along the line; andgenerating a stress in the first object so as to cause the fracture to reach a first-side end face of the second object along the line and cut the second object along the line.2. An object cutting method according to claim 1 , wherein the first-side end face of the first object and the second-side end face of the second object are bonded to each other by anode bonding.3. An object cutting method according to claim 1 , wherein the first-side end face of the first object and the second-side end face of the second object are bonded to each other by surface-activated direct bonding.4. An object cutting method according to claim 1 , wherein the first ...

Hydrogen Storage Alloy and Hydrogen Storage Unit Using Same

A hydrogen storage alloy comprises a hydrogen storage base formed of a mixture of Mg and an alloy (MgNi, for example), and a catalytic layer covering a surface of the hydrogen storage base . The hydrogen storage alloy with this structure exhibits both a high ability to store hydrogen and a high ability to cause hydrogen to diffuse in it in the solid state, provided by Mg and MgNi, respectively. Hydrogen absorbed in Mg in one region is passed on to Mg (or MgNi) in another region by virtue of MgNi. Since this movement of hydrogen does not require heat nor pressure, hydrogen can be absorbed at room temperature and atmospheric pressure. 1. A hydrogen storage alloy , comprising:a hydrogen storage base formed of a mixture of magnesium and an alloy selected from a group consisting of a magnesium-nickel alloy, a magnesium-titanium alloy, a magnesium-niobium alloy, a magnesium-manganese alloy and a magnesium-cobalt alloy, anda catalytic layer covering a surface of the hydrogen storage base.2. The hydrogen storage alloy according to claim 1 , wherein the catalytic layer is formed of Pd.3. A hydrogen storage unit claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a hydrogen storage alloy according to , and'}a porous body having a large number of holes allowing hydrogen molecules to pass through,said hydrogen storage alloy covering a surface of the porous body, inclusive of surfaces of the holes thereof.4. The hydrogen storage unit according to claim 3 , wherein the catalytic layer is formed of Pd.5. The hydrogen storage unit according to claim 3 , wherein the porous body is formed of an assembly of nanofibers.6. The hydrogen storage unit according to claim 5 , wherein the individual nanofibers are randomly oriented in the assembly.7. The hydrogen storage unit according to claim 3 , wherein the hydrogen storage base constituting the hydrogen storage alloy is a layer vapor-deposited on the surface of the porous body. This invention relates to a hydrogen ...

Hydrogen Storage Unit

A hydrogen storage alloy unit comprises a porous body having a large number of holes (spaces) allowing hydrogen atoms to pass through, and a hydrogen storage alloy covering a surface of the porous body inclusive of surfaces of the holes thereof. The hydrogen storage alloy includes a hydrogen storage base formed of a hydrogen storage material, and a catalytic layer covering a surface of the hydrogen storage base. The porous body is formed of an assembly of hydrogen storage fibers formed by vapor-depositing the hydrogen storage alloy onto nanofibers. 1. A hydrogen storage unit , comprising:a porous body having a large number of holes allowing hydrogen molecules to pass through, anda hydrogen storage alloy covering a surface of the porous body, inclusive of surfaces of the holes thereof,said hydrogen storage alloy includinga hydrogen storage base formed of a hydrogen storage material, anda catalytic layer covering a surface of the hydrogen storage base.2. The hydrogen storage unit according to claim 1 , wherein the porous body is formed of an assembly of nanofibers.3. The hydrogen storage unit according to claim 2 , wherein the individual nanofibers are randomly oriented in the assembly.4. The hydrogen storage unit according to claim 2 , wherein the assembly is in the form of nonwoven fabric.5. The hydrogen storage unit according to claim 1 , wherein the hydrogen storage base is a layer vapor-deposited on the surface of the porous body.6. The hydrogen storage unit according to claim 1 , wherein the hydrogen storage base is formed of a mixture of magnesium and an alloy selected from a group consisting of a magnesium-nickel alloy claim 1 , a magnesium-titanium alloy claim 1 , a magnesium-niobium alloy claim 1 , a magnesium-manganese alloy and a magnesium-cobalt alloy.7. The hydrogen storage unit according to claim 6 , wherein the catalytic layer is formed of Pd. This invention relates to a hydrogen storage unit capable of storing hydrogen.Fuel cells used in vehicles and ...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE FORMED USING A SUBSTRATE CUTTING METHOD

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface. 144-. (canceled)45. A method of manufacturing a semiconductor device formed using a substrate cutting method , the manufacturing method comprising the steps of:{'sup': 8', '2, 'irradiating a substrate with laser light comprising a pulsed laser light having a pulse width larger than 1 μs at a converging point within the substrate, so that the converging point of the pulsed laser light is positioned within the substrate and a peak power of the laser light at the converging point is not less than 1×10(W/cm) to form a modified spot within the substrate at the converging point; and'}performing the irradiating step at multiple locations along a cutting line to form a plurality of non-overlapping modified spots within the substrate at converging points of the pulsed laser light, respectively, without melting a pulsed laser light incident surface of the substrate, the modified spots have a modified region which functions as a starting point for cutting the substrate along the cutting line;wherein the modified spots are formed intermittently and in alignment along the cutting line, the starting point is formed in the substrate only by the laser irradiation converging within the substrate, and a crack is generated from the modified region ...

LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS

A laser beam machining method and a laser beam machining device capable of cutting a work along a predetermined cutting line on the surface of the work, wherein a pulse laser beam is irradiated on the predetermined cutting line on the surface of the work causing a multiple photon absorption with a condensed point arranged inside the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cutting line, whereby the work can be cut with a small force by cracking the work along the predetermined cutting line starting from the modified area. 144-. (canceled)45. A laser processing machining apparatus comprising:a light source for emitting pulse laser light having a pulse width of 1 μs or less;ellipticity adjusting means for making the pulse laser light emitted from the laser light source attain elliptical polarization with an ellipticity of other than 1;major axis adjusting means for adjusting a major axis of the pulse laser light so that the major axis of an ellipse indicative of the elliptical polarization of the pulse laser light extends along a line along which the object is intended to be cut in an object to be processed;{'sup': 8', '2, 'light-converging means for converging the pulse laser light adjusted by the major axis adjusting means such that the pulse laser light attains a peak power density of at least 1×10(W/cm) at a light-converging point;'}means for locating the light-converging point of the pulse laser light converged by the light-converging point within the object to be processed; andmoving means for relatively moving the light-converging point of pulse laser light along the line along which the object is intended to be cut.46. A laser processing apparatus according to further comprising 90° rotation adjusting means adapted to rotate the polarization of the pulse laser light adjusted by the ellipticity adjusting means by about 90°.47. A laser processing ...

LASER PROCESSING METHOD

The present invention provides a laser processing method which improves strength and quality of an object to be processed after working. In the present embodiment, after modified regions are formed along the outlines of hollowed-out portions Q and Q in the object by irradiating the object with a laser light, etching is performed onto the object to selectively advance etching along a fracture which is contained in the modified regions or extend from the modified regions and the hollowed-out portions Q and Q are spaced and moved from the object Here, the modified regions are formed so as to connect to each other along the outlines of the hollowed-out portions Q and Q and further exposed on a surface side of the object In this way, in the present embodiment, it is possible to perform working so as to hollow out the hollowed-out portions Q and Q from the object without applying external stress, and it is possible to remove the fracture generated according to the formation of the modified regions by etching. 1. A laser processing method for working an object to be processed so as to hollow out a predetermined portion of the object by utilizing a modified region which is formed by converging a laser light inside the object , the method comprising:a laser light irradiating step of irradiating the object with the laser light, to form the modified region along an outline of the predetermined portion in the object;an etching step of performing etching onto the object after the laser light irradiating step, to selectively advance etching along a fracture which is contained in the modified region or extend from the modified region; anda spacing and moving step of spacing and moving the predetermined portion from the object after the etching step, whereinin the laser light irradiating step, the modified region is formed so that the fracture is connected along the outline, and the fracture is exposed on an outer surface side of the object.2. The laser processing method according ...

METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE

Multiphoton absorption is generated, so as to form a part which is intended to be cut due to a molten processed region within a silicon wafer , and then an adhesive sheet bonded to the silicon wafer is expanded. This cuts the silicon wafer along the part which is intended to be cut with a high precision into semiconductor chips . Here, opposing cut sections of neighboring semiconductor chips are separated from each other from their close contact state, whereby a die-bonding resin layer is also cut along the part which is intended to be cut . Therefore, the silicon wafer and die-bonding resin layer can be cut much more efficiently than in the case where the silicon wafer and die-bonding resin layer are cut with a blade without cutting a base 118-. (canceled)19. A method of cutting a semiconductor substrate having a front face formed with a functional device along a cutting line , the method comprising the steps of:irradiating the semiconductor substrate with laser light using a rear face of the semiconductor substrate as a laser light entrance surface and locating a light-converging point within the semiconductor substrate, thereby forming a modified region functioning as a cutting start region located within the semiconductor substrate inside of the laser light entrance surface by a predetermined distance along the cutting line;attaching an expandable holding member to the rear face of the semiconductor substrate by way of a die-bonding resin layer after forming the cutting start region; andexpanding the holding member after the step of attaching the holding member to the rear face of the semiconductor substrate, thereby cutting the semiconductor substrate and the die-bonding resin layer along the cutting line.20. A method of cutting a semiconductor substrate according to claim 19 , further comprising the step of grinding the rear face of the semiconductor substrate thereby causing the semiconductor substrate to attain a predetermined thickness before forming the ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 16-. (canceled)7. A method of processing a substrate comprising:irradiating a substrate in which a plurality of functional devices are formed in a matrix on a front face of the substrate, with laser light while positioning a light-converging point within the substrate, thereby forming modified regions respectively configured to function as start point regions for cutting within the substrate along cutting lines along which the substrate is to be cut, wherein the start point regions are shifted from a center position in a thickness direction of the substrate toward the front face of the substrate, andindependently dividing the plurality of the functional devices from each other by fractures generated from the start point regions and extending in a thickness direction of the substrate, wherein each fracture only reaches one face of the substrate but not the other face of the substrate, and wherein cut surfaces of the substrate formed by the fractures are in close contact with each other rather than being separated from each other.8. The method according to claim 7 , wherein the substrate comprises a semiconductor substrate.9. The method according to claim 7 , wherein the substrate comprises a ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness.

LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS

A laser processing method comprising a step of irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut. 144-. (canceled)45: A laser processing method comprising a step of:irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut.46: A laser processing method according to claim 45 , wherein said elliptical polarization is linear polarization with an ellipticity of zero.47: A laser processing method according to claim 45 , wherein said ellipticity of elliptical polarization is adjusted by changing the angle of direction of a quarter-wave plate.48: A laser processing method according to claim 45 , comprising a step of irradiating said object with laser light while rotating the polarization of laser light by about 90° by a half-wave plate after the step of forming said modified region.49: A laser processing method according to claim 45 , further comprising a step of irradiating said object with laser light while rotating said object by about 90° around a thickness direction of said object.50: A laser processing method comprising a step of:irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 ...

METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE

A light-emitting device manufacturing method comprises the steps of irradiating a substrate having a III-V compound semiconductor layer formed on a front face with laser light L along lines to cut while locating a converging point P within the sapphire substrate and using a rear face thereof as a laser light entrance surface, and thereby forming modified regions along the lines within the substrate then forming a light-reflecting layer on the rear face of the substrate and thereafter extending fractures generated from the modified regions acting as a start point in the thickness direction of the substrate and thereby cutting the substrate the semiconductor layer and the light-reflecting layer along the lines and manufacturing a light-emitting device. 1. A method for manufacturing a light-emitting device comprising:a second step of irradiating a sapphire substrate having a front face formed with a III-V compound semiconductor layer with first laser light along a predetermined line to cut while locating a converging point within the sapphire substrate and using a rear face of the sapphire substrate as a laser entrance surface, and thereby forming a modified region within the sapphire substrate along the line;a third step of forming a light-reflecting layer on the rear face of the sapphire substrate after the second step; anda fourth step of extending a fracture generated from the modified region acting as a start point in a thickness direction of the sapphire substrate after the third step, and thereby cutting the sapphire substrate, the III-V compound semiconductor layer and the light-reflecting layer along the line, and manufacturing the light-emitting device.2. A method for manufacturing a light-emitting device according to claim 1 , wherein claim 1 , in the second step claim 1 , the modified region is formed within the sapphire substrate along the line so that the fracture to be extended in the thickness direction of the sapphire substrate in the fourth step ...

HYDROGEN-ABSORBING ALLOY AND HYDROGEN SENSOR USING THE ALLOY

A hydrogen sensor using a hydrogen-absorbing alloy containing an Mg—Ni-based alloy and a Zr—Ti-based alloy includes a substrate (), a hydrogen reaction layer () formed on the substrate () and containing the Mg—Ni-based alloy and the Zr—Ti-based alloy, and a first catalyst layer () formed on the hydrogen reaction layer () and capable of accelerating hydrogenation of the Mg—Ni-based alloy. 1. A hydrogen-absorbing alloy containing an Mg—Ni-based alloy and a Zr—Ti-based alloy.2. The hydrogen-absorbing alloy according to claim 1 , wherein the hydrogen-absorbing alloy consists essentially of an Mg—Ni alloy and a Zr—Ti—Mn alloy.3. A hydrogen sensor using the hydrogen-absorbing alloy of claim 1 , comprising:a substrate;a hydrogen reaction layer formed on the substrate and containing the Mg—Ni-based alloy and the Zr—Ti-based alloy; anda first catalyst layer formed on the hydrogen reaction layer and capable of accelerating hydrogenation of the Mg—Ni-based alloy.4. The hydrogen sensor according to claim 3 , wherein the hydrogen reaction layer is a disperse mixture of the Mg—Ni-based alloy and the Zr—Ti-based alloy.5. The hydrogen sensor according to claim 3 , wherein the hydrogen reaction layer includes a light control layer formed of the Mg—Ni-based alloy claim 3 , and a second catalyst layer formed of the Zr—Ti-based alloy and capable of accelerating dehydrogenation of the Mg—Ni-based alloy.6. The hydrogen sensor according to claim 5 , wherein the second catalyst layer is sandwiched between the light control layer and the substrate.7. The hydrogen sensor according to claim 5 , wherein the second catalyst layer is sandwiched between the light control layer and the first catalyst layer.8. The hydrogen sensor according to claim 5 , wherein the second catalyst layer is sandwiched between the light control layer and the first catalyst layer and between the light control layer and the substrate. The present invention relates to a hydrogen-absorbing alloy capable of absorbing ...

Electricity-Generation Device

An electricity generation device includes: a tubular fuel cell () having an electrolyte layer () sandwiched between inside and outside electrodes () to which a fuel gas is supplied, the fuel cell having an interior formed as an inside channel () for the fuel gas; a cover pipe () arranged around the fuel cell () with a gap provided between the outside electrode () and the cover pipe; a connecting member () connecting the fuel cell () and the cover pipe () to each other and permitting an outside channel () for the fuel gas to be formed around the fuel cell () by making use of the gap; and a fuel gas pipe () connected to each of opposite ends of the cover pipe () and forming a flow path for the fuel gas in cooperation with the cover pipe (). 1. An electricity generation device comprising:a tubular fuel cell including an electrolyte layer sandwiched between inside and outside electrodes to which a fuel gas is supplied, the fuel cell having an interior formed as an inside channel for the fuel gas;a cover pipe arranged around the fuel cell with a gap provided between the outside electrode and the cover pipe;a connecting member connecting the fuel cell and the cover pipe to each other and permitting an outside channel for the fuel gas to be formed around the fuel cell by making use of the gap; anda fuel gas pipe connected to each of opposite ends of the cover pipe and forming a flow path for the fuel gas in cooperation with the cover pipe.2. The electricity generation device according to claim 1 , wherein the gap is smaller than an inner diameter of the fuel cell.3. The electricity generation device according to claim 1 , wherein the connecting member includes two connecting members so arranged as to close upstream and downstream ends claim 1 , respectively claim 1 , of the outside channel and has through holes formed therein to permit the fuel gas to flow through the outside channel. The present invention relates to an electricity generation device for generating ...

Electricity-Generation Device

An electricity generation device () using a fuel cell () having a fuel electrode () and an air electrode () to which a fuel gas and air are supplied, respectively, includes: a fuel gas conduit () through which the fuel gas flows; a cover () configured to cover an outside of the fuel gas conduit () and cooperating with a peripheral wall () of the fuel gas conduit () to form an air passage () therebetween, the air passage extending along the fuel gas conduit (); an air inlet hole () formed through the cover () to allow air to flow into the air passage (); and an air outlet hole () provided downstream of the air electrode exposed to the air passage (), to cause the fuel gas conduit () and the air passage () to communicate with each other. 1. An electricity generation device using a fuel cell having a fuel electrode and an air electrode to which a fuel gas and air are supplied , respectively , comprising:a fuel gas conduit through which the fuel gas flows;a cover configured to cover an outside of the fuel gas conduit and cooperating with a peripheral wall of the fuel gas conduit to form an air passage therebetween, the air passage extending along the fuel gas conduit;an air inlet hole formed through the cover to allow air to flow into the air passage; andan air outlet hole provided downstream of the air electrode exposed to the air passage, to cause the fuel gas conduit and the air passage to communicate with each other.2. The electricity generation device according to claim 1 , wherein:the fuel electrode forms an inner pipe,the cover forms an outer pipe cooperating with the inner pipe to constitute a double pipe structure, andthe outer pipe is fixed to a fuel gas pipe continuous with the inner pipe and passing the fuel gas therethrough.3. The electricity generation device according to claim 1 , wherein the air inlet hole includes a plurality of air inlet holes.4. The electricity generation device according to claim 1 , wherein the fuel gas is exhaust gas of a motor ...

METHOD OF PRODUCING L-SHAPED PRODUCT

A method of producing an L-shaped product () which includes an L-shaped flat top wall (), an inside wall () extending and connected along an inside edge () of the top wall, and an outside wall () extending and connected along an outside edge () of the top wall, each of the inside and outside walls being terminated by flange () substantially parallel to the top wall, is disclosed. The method comprises the steps of: providing sheet metal material; providing a drawing die assembly; and stamping the sheet metal material by the drawing die assembly to produce an intermediate product. The method further comprises the steps of: providing a bending die assembly; and stamping the intermediate product by the bending die assembly to produce an L-shaped product completed. 1. A method of producing an L-shaped product which includes an L-shaped flat top wall having first and second legs connected to each other so as to define inside and outside edges , an inside wall extending along and connected to the inside edge of the top wall and forming a first angle relative to the top wall , and an outside wall extending along and connected to the outside edge of the top wall and forming a second angle relative to the top wall , each of the inside and outside walls being terminated by a flange substantially parallel to the top wall , the method comprising the steps of:providing sheet metal material;providing a drawing die assembly; andstamping the sheet metal material with the drawing die assembly to produce an intermediate product which includes an L-shaped flat top wall having first and second legs corresponding to the first and second legs of the L-shaped flat top wall of the L-shaped product, and inside and outside walls corresponding to the inside and outside walls of the completed L-shaped product, and flanges corresponding to the flanges of the completed L-shaped product;wherein the intermediate product includes a first region adjacent to a free end of the first leg and an opposite ...

METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE

Multiphoton absorption is generated, so as to form a part which is intended to be cut due to a molten processed region within a silicon wafer , and then an adhesive sheet bonded to the silicon wafer is expanded. This cuts the silicon wafer along the part which is intended to be cut with a high precision into semiconductor chips . Here, opposing cut sections of neighboring semiconductor chips are separated from each other from their close contact state, whereby a die-bonding resin layer is also cut along the part which is intended to be cut . Therefore, the silicon wafer and die-bonding resin layer can be cut much more efficiently than in the case where the silicon wafer and die-bonding resin layer are cut with a blade without cutting a base 118-. (canceled)19. A method of cutting a semiconductor substrate , the method comprising the steps of:irradiating a semiconductor substrate with laser light having a wavelength that enables the laser light to transmit through a laser incident surface of the semiconductor substrate, thereby forming a modified region only within the semiconductor substrate along each of a plurality of cutting lines arranged in a matrix with respect to a surface of the semiconductor substrate, wherein each modified region is a molten processed region separated from the laser incident surface in a thickness direction of the semiconductor substrate, and each modified region forms a cutting part of the semiconductor substrate to be cut; andexpanding a sheet, after the cutting parts of the semiconductor substrate are formed by the irradiation step, by pulling peripheral portions of the sheet outwardly, thereby cutting and separating at least the semiconductor substrate along the cutting lines along which the cutting parts have been formed, wherein the sheet is bonded to the semiconductor substrate.20. A method of cutting a semiconductor substrate according to claim 19 , wherein opposing cut sections of the neighboring semiconductor substrates are ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate , and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 16-. (canceled)7. A semiconductor chip manufacturing method wherein a semiconductor substrate having a plurality of circuit devices formed in a matrix on a front face of the semiconductor substrate is divided into the circuit devices to obtain semiconductor chips , the method comprising:irradiating the semiconductor substrate with laser light, thereby forming a plurality of modified regions embedded within the semiconductor substrate along each line of a plurality of cutting lines arranged in a grid running between the circuit devices which are adjacent to one another;grinding or etching a rear face of the semiconductor substrate after forming the modified regions, thereby causing the semiconductor substrate to attain a predetermined thickness; andcutting the semiconductor substrate by the grinding or etching, or by fracture after the grinding or etching, a starting point of which is a modified region.8. The semiconductor chip manufacturing method according to claim 7 , wherein after forming the modified regions and before grinding or etching the rear face of the semiconductor substrate claim 7 , fractures generated from each modified region reach the front face of the semiconductor substrate ...

Optical information recording medium and laminate for optical information recording medium

An optical information recording medium includes multiple laminated resin layers. At least one of interfaces between the resin layers has a refractive index which gradually changes in a thickness direction of the resin layers.

Optical information recording medium and optical information recording medium laminate

There is provided an optical information recording medium including a plurality of laminated resin layers, and an inorganic layer that is formed in an interface between the resin layers. Storage elastic moduli are different when the interface is assumed to be a boundary. An information signal is recorded in the interface.

METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC CONVERSION ELEMENT

To provide a manufacturing method of a thermoelectric conversion element, including: a holding step of holding thermoelectric conversion members () while exposing at least one side end portions of at least one of the thermoelectric conversion members; a coating step of coating the exposed end portions of the thermoelectric conversion member with metal powder (); and an electrode forming step of forming an electrode (4) at the end portions of the thermoelectric conversion member by sintering the metal powder. 1. A manufacturing method of a thermoelectric conversion element comprising:a holding step of holding at least one thermoelectric conversion member while exposing at least one end portion of the at least one thermoelectric conversion member;a coating step of coating the exposed end portion of the thermoelectric conversion member with metal powder; andan electrode forming step of forming an electrode at the end portion of the thermoelectric conversion member by sintering the metal powder.2. The manufacturing method of the thermoelectric conversion element according to claim 1 , whereina plurality of the thermoelectric conversion members are arranged side by side in the holding step, andeach adjacent pair of end portions of the thermoelectric conversion members are electrically connected to each other with the electrode in the electrode forming step.3. The manufacturing method of the thermoelectric conversion element according to claim 2 , wherein claim 2 , in the holding step claim 2 , end surfaces on a first side of each of the plurality of thermoelectric conversion members are arranged on the same plane and end surfaces on a second side of each of the plurality of thermoelectric conversion members are exposed.4. The manufacturing method of the thermoelectric conversion element according to claim 3 , wherein claim 3 , in the holding step claim 3 , the plurality of the thermoelectric conversion members are held by a holding section having openings into which the ...

Heat exchange structure of power generation facility

A heat exchange structure of a power generation facility including a piping system that is embedded in a reinforced concrete underground structure that is integrally formed with the power generation facility, and a heat medium that is fluid and is stored in the piping system. The piping system circulates the heat medium used for heat exchange in the power generation facility.

PARTICULATE FILM LAMINATING SYSTEM AND PARTICULATE FILM LAMINATING METHOD USING SAME

A particulate film laminating system includes: a nanoparticle generating chamber in which nanoparticles of a metal material are generated; a nanofiber generating chamber in which nanofibers of a resin material are generated; a laminating chamber in which the nanoparticles and the nanofibers are film-formed and laminated on a substrate; a nanoparticle film-forming region configured such that the nanoparticles are film-formed in the laminating chamber; a nanofiber film-forming region configured such that the nanofibers are film-formed in the laminating chamber; a moving unit which moves the substrate between the nanoparticle film-forming region and the nanofiber film-forming region; an exhaust unit which exhausts the laminating chamber; and a coolant-gas introduction unit which introduces coolant gas into each of the nanoparticle generating chamber and the nanofiber generating chamber. 1. A particulate film laminating system comprising:a nanoparticle generating chamber in which a metal material to be heated is arranged and nanoparticles of the metal material are generated;a nanostructure generating chamber in which a resin material to be heated is arranged and nanostructures of the resin material are generated;a laminating chamber which is connected to the nanoparticle generating chamber and the nanostructure generating chamber respectively via a particle communication pipe and a structure body communication pipe, so as to enable the nanoparticles and the nanostructures to be film-formed and laminated on a substrate;a nanoparticle film-forming region configured such that the nanoparticles are film-formed in the laminating chamber;a nanostructure film-forming region configured such that the nanostructures are film-formed in the laminating chamber;a moving unit which moves the substrate between the nanoparticle film-forming region and the nanostructure film-forming region;an exhaust unit which exhausts the laminating chamber; anda coolant-gas introduction unit which ...

SPUTTERING DEVICE

A sputtering device includes: a vacuum chamber a plurality of targets (to ); a shield that selectively exposes, to the inside of the vacuum chamber only a target out of which a film is to be formed; a substrate holding unit that holds a substrate on which fine particles ejected from the target are deposited to form a film; a first transfer unit that fixedly holds and moves the substrate holding unit a mask disposed between the substrate and the target a second transfer unit that moves the mask and a plurality of through-hole units to having patterned through holes penetrating through the mask 1. A sputtering device comprising:a vacuum chamber that is evacuated and hermetically sealed;a plurality of targets each fixed in the vacuum chamber and comprising a film forming material;a shield that selectively exposes, to an inside of the vacuum chamber, only a first target among the plurality of targets out of which a film is to be formed;a substrate holding unit that holds a substrate on which fine particles ejected from the first target are deposited to form a film;a first transfer unit that fixedly holds the substrate holding unit and moves the substrate holding unit within the vacuum chamber;a mask disposed between the substrate and the targets;a second transfer unit that moves the mask within the vacuum chamber; anda plurality of through-hole units having patterned through holes penetrating through the mask.2. The sputtering device according to claim 1 , wherein:the first transfer unit includes a belt stretched between a pair of first rollers,the mask is formed as an elongate sheet stretched between a pair of second rollers,the first rollers and the second rollers are coupled to output shafts of first and second motors, respectively,the plurality of through-hole units are formed in a manner associated with the targets, andat least one of the targets is associated with two or more of the plurality of through-hole units. The present invention relates to sputtering ...

NANOPARTICLE DIFFERENTIATION DEVICE

A nanoparticle differentiation device includes: a plurality of chambers that are linearly arranged, and divided from each other by partitions a generation chamber that is provided with a material to be vaporized; a plurality of film forming chambers to that are provided with respective substrates on which nanoparticles to generated from the material are film-formed; a plurality of communication tubes that are provided to penetrate the respective partitions in order to cause the adjoining chambers to communicate with each other; a gas introducing tube that communicates with the generation chamber in order to introduce cooling gas; and a vacuum tube that communicates with a high vacuum chamber that is a chamber arranged at a position farthest from the generation chamber i.e., the film forming chamber among the chambers in order to perform evacuation. 1. A nanoparticle differentiation device , comprising:a plurality of chambers that are linearly arranged, and divided from each other by partitions, the plurality of chambers including a generation chamber arranged at one end that is provided with a material to be vaporized, and a plurality of film forming chambers that are provided with respective substrates on which nanoparticles generated from the material are film-formed;a plurality of communication tubes that are provided to penetrate the respective partitions in order to cause adjoining chambers to communicate with each other;a gas introducing tube that communicates with the generation chamber in order to introduce cooling gas; anda vacuum tube that communicates with a high vacuum film forming chamber that is a arranged at a position farthest from the generation chamber among the film forming chambers in order to perform evacuation.2. The nanoparticle differentiation device according to claim 1 , wherein the communication tubes have linear shapes with respective uniform diameters claim 1 , and the communication tubes have different inner diameters so as to be ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate , and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 16-. (canceled)7. A semiconductor chip manufacturing method wherein a semiconductor substrate having a plurality of functional devices formed in a matrix on a front face of the semiconductor substrate is divided into the functional devices to obtain semiconductor chips , the method comprising:irradiating the semiconductor substrate with laser light, thereby forming a plurality of modified regions embedded within the semiconductor substrate along each line of a plurality of cutting lines arranged in a grid running between the functional devices which are adjacent to one another;reducing a thickness of the semiconductor substrate after forming the modified regions, thereby causing the semiconductor substrate to attain a predetermined thickness; andcutting the semiconductor substrate by reducing the thickness of the semiconductor substrate, or by fracture in the semiconductor substrate of which the thickness is reduced.8. The semiconductor chip manufacturing method according to claim 7 , wherein after forming the modified regions and before reducing the thickness of the semiconductor substrate claim 7 , fractures generated from each modified region reach the front face of the semiconductor ...

POWER GENERATOR

A power generator includes: a fuel electrode that receives a supply of fuel gas; an air electrode that receives a supply of air; an electrolyte layer disposed in between the fuel electrode and the air electrode a gas flow channel that circulates therein the fuel gas or the air, with the fuel electrode or the air electrode being exposed to at least part of the gas flow channel a porous body filled in the gas flow channel and a porous sheet present in contact with the porous body and the fuel electrode or the air electrode the porous sheet being made of a material having electrical conductivity, the material having pores formed to spread in a uniform manner, the pores being larger in diameter than pores formed in the porous body 1. A power generator , comprising:a fuel electrode that receives a supply of fuel gas;an air electrode that receives a supply of air;an electrolyte layer disposed in between the fuel electrode and the air electrode;a gas flow channel that circulates therein the fuel gas or the air, with the fuel electrode or the air electrode being exposed to at least part of the gas flow channel;a porous body filled in the gas flow channel; anda porous sheet in contact with the porous body and the fuel electrode or the air electrode, the porous sheet being made of a material having electrical conductivity, the material having pores formed to spread in a uniform manner, the pores being larger in diameter than pores formed in the porous body.2. The power generator according to claim 1 , comprising: the plurality of fuel cells are each provided through the gas flow channel, both the fuel electrode and the air electrode are exposed to the gas flow channel, and', 'the porous sheet includes portions formed with materials different from each other, the portions being in contact with the fuel electrode and the air electrode, respectively., 'a plurality of fuel cells each formed of the fuel electrode, the air electrode, and the electrolyte layer, wherein'}3. The power ...

LAMINATED ELEMENT MANUFACTURING METHOD

A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region. 1. A laminated element manufacturing method comprising:a first forming step of preparing a first wafer as a semiconductor wafer including a semiconductor substrate having a front surface and a back surface, and a circuit layer including a plurality of functional elements two-dimensionally arranged along the front surface, and forming a first gettering region for each of the functional elements by irradiating the semiconductor substrate of the first wafer with a laser light so as to correspond to each of the functional elements;a first grinding step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, after the first forming step;a bonding step of preparing a second wafer as the semiconductor wafer and bonding the circuit layer of the second wafer to the semiconductor substrate of the first wafer such that each of the functional elements of the first wafer correspond to each of the functional elements of the second wafer, after the first grinding step;a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light so as to ...

THERMOELECTRIC POWER-GENERATION DEVICE

A thermoelectric power-generation device includes: a first flow path through which a high-temperature medium flows; a second flow path through which a low-temperature medium that has a temperature difference with respect to the high-temperature medium flows; an insulating isolation plate configured to isolate the first flow path from the second flow path; insulating outer layer isolation plates provided at outermost portions of layered flow paths including the first flow path and the second flow path; a plurality of thermoelectric conversion units configured to generate power using the temperature difference; and electrodes provided at the outer layer isolation plates [[20]] and configured to connect the thermoelectric conversion units with mutually different semiconductor polarities in series, and the thermoelectric conversion units are disposed so as to straddle the first flow path and the second flow path. 1. A thermoelectric power-generation device comprising:a first flow path through which a first fluid flows;a second flow path through which a second fluid that has a temperature difference with respect to the first fluid flows;an insulating isolation plate configured to isolate the first flow path from the second flow path;insulating outer layer isolation plates provided at outermost portions of layered flow paths including the first flow path and the second flow path;a plurality of thermoelectric conversion units configured to generate power using the temperature difference; andelectrodes provided at the outer layer isolation plates and configured to connect the thermoelectric conversion units with mutually different semiconductor polarities in series,wherein the thermoelectric conversion units are disposed so as to straddle the first flow path and the second flow path; wherein the thermoelectric conversion units include conductive members configured to block through-holes formed in the isolation plate, first thermoelectric conversion elements disposed at the ...

SYSTEM FOR FORMING MULTINARY NANOPARTICLE FILM AND METHOD FOR FORMING NANOPARTICLE FILM USING SAME

A multinary nanoparticle film forming system includes: a generating chamber with a plurality of metal materials arranged therein so as to generate multinary nanoparticles from nanoparticles; a film forming chamber with a substrate arranged therein; and granulation units arranged in the generating chamber so as to respectively correspond to the plurality of metal materials. Further, each of the granulation units includes each of containers respectively covering the metal materials, each of heaters respectively arranged in the containers, each of outflow ports respectively provided at the containers so as to enable the nanoparticles to flow out therefrom, and each of inflow ports respectively provided at the containers so as to enable the coolant gas to be respectively introduced into the containers. 1. A multinary nanoparticle film forming system comprising:a generating chamber with a plurality of metal materials arranged therein so as to generate multinary nanoparticles from nanoparticles formed from each of the metal materials;a film forming chamber with a substrate arranged therein so as to enable a film of the multinary nanoparticles to be formed on the substrate;a communication pipe configured to connect the generating chamber to the film forming chamber;an exhaust unit configured to carry out exhaust from the film forming chamber;a coolant-gas introduction unit configured to introduce coolant gas into the generating chamber; andgranulation units arranged in the generating chamber so as to respectively correspond to the plurality of metal materials,wherein the granulation unit includes a container covering each of the metal materials, a heater arranged in the container, an outflow port provided at the container so as to enable the nanoparticles to flow out therefrom, and an inflow port provided at the container so as to enable the coolant gas to be introduced into the container.2. The multinary nanoparticles film forming system according to claim 1 , wherein the ...

Slit lamp microscope

A slit lamp microscope capable of appropriately and easily carrying out the setting of the optical system is provided. In storage 102 of a slit lamp microscope 1 , correspondence information 110 is stored in which standard setting conditions of an illumination system 8 and/or an observation system 6 are associated with each of multiple sites of an eye E. A searching part 121 searches the standard setting conditions corresponding to a site designated by an operation part 104 from the correspondence information 110 . A setting-state acquiring part 122 acquires current setting states of the illumination system 8 and/or the observation system 6 . A setting-state specifying part specifies, from among the current setting states acquired by the setting-state acquiring part 122 , those differing from the standard setting conditions searched by the searching part 121 . A controller displays information based on this specified result on the display 103.

LAMINATED ELEMENT MANUFACTURING METHOD

A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer. 1. A laminated element manufacturing method comprising:a preparing step of preparing a first wafer, a second wafer, and a third wafer, respectively as a semiconductor wafer including a semiconductor substrate having a front surface and a back surface, and a circuit layer including a plurality of functional elements two-dimensionally arranged along the front surface;a first bonding step of bonding the circuit layer of the first wafer to the circuit layer of the third wafer such that each of the functional elements of the third wafer correspond to each of the functional elements of the first wafer;a first forming step of forming a first modified region along a line to cut by irradiating the semiconductor substrate of the first wafer with a laser light along the line to cut set to pass between each of the functional elements, after the first bonding step;a first grinding step of grinding the semiconductor substrate of the first wafer after the first forming step;a second bonding step of bonding the circuit layer of the second wafer to the semiconductor substrate of the first wafer such that each of the functional elements of the first wafer correspond to each of the functional elements of the second wafer, after the first grinding step;a second forming step of forming a second modified region ...

Guide tube for guiding cable of internal observation device and cable guiding method

A guide tube guides a cable of an internal observation device into a pipe bore. The cable is pushed into the pipe bore to force an observation image capturing part provided proximate a tip end of the cable to approach a portion to be observed when performing internal observation of the pipe bore of a pipe-like structure with the internal observation device. The guide tube includes: an outside wall having an outside diameter of the guide tube that is substantially equal to an internal diameter of the pipe bore; and an internal wall having an internal diameter of the guide tube that is substantially equal to an outside diameter of the cable

Ceramic member and defect test system

A ceramic member includes a housing body made of ceramics provided with a first surface set as a measurement base surface extending in an X1 direction and a Y1 direction that is perpendicular to the X1 direction, and an attachment surface to which a member to be attached is fixed, the attachment surface being provided to have a first inclined angle with respect to the measurement base surface in the X1 direction and a second inclined angle with respect to the measurement base surface in the Y1 direction.

THERMOELECTRIC CONVERSION MODULE

The invention comprises a plurality of thermoelectric conversion elements arranged adjacent to each other, first electrodes joined to first ends of the thermoelectric conversion elements to electrically connecting the first ends of adjacent thermoelectric conversion elements, and second electrodes joined to opposite, second ends of the thermoelectric conversion elements to electrically connecting the second ends of adjacent thermoelectric conversion elements, wherein the thermoelectric conversion elements electrically connected by the first and second electrodes form at least one series circuit element, and third electrodes having flexibility are provided at ends of the series circuit element. 1. A thermoelectric conversion module , comprising:a plurality of thermoelectric conversion elements arranged adjacent to each other,first electrodes joined to first ends of the thermoelectric conversion elements to electrically connecting the first ends of adjacent thermoelectric conversion elements,second electrodes joined to opposite, second ends of the thermoelectric conversion elements to electrically connecting the second ends of adjacent thermoelectric conversion elements, anda first covering layer covering the first electrodes, the thermoelectric conversion elements electrically connected by the first and second electrodes form at least one series circuit element,', 'third electrodes having flexibility are provided at ends of the at least one series circuit element, and', 'the third electrodes are covered by a second covering layer lower in thermal conductivity than the first electrode., 'wherein2. The thermoelectric conversion module according to claim 1 , wherein the thermoelectric conversion elements electrically connected by the first and second electrodes form a plurality of series circuit elements claim 1 , and wherein:the series circuit elements are connected to each other by the third electrodes.3. The thermoelectric conversion module according to claim 1 , ...

THERMOELECTRIC CONVERSION MODULE AND THERMOELECTRIC CONVERSION ELEMENT

A thermoelectric conversion module applied to a heating source, comprising a plurality of thermoelectric conversion elements arranged adjacent to each other, first electrodes located away from the heating source and joined to first ends of the thermoelectric conversion elements to electrically connecting the first ends of adjacent thermoelectric conversion elements, second electrodes located nearer to the heating source and joined to opposite, second ends of the thermoelectric conversion elements to electrically connecting the second ends of adjacent thermoelectric conversion elements, wherein the thermoelectric conversion elements each comprise a first structural portion joined to the first electrode and a second structural portion joined to the second electrode, the second electrode being smaller in volume than the first electrode. 1. A thermoelectric conversion module applied to a heating source , comprising:a plurality of thermoelectric conversion elements arranged adjacent to each other,first electrodes located away from the heating source and joined to first ends of the thermoelectric conversion elements to electrically connect the first ends of adjacent thermoelectric conversion elements, andsecond electrodes located nearer to the heating source and joined to opposite, second ends of the thermoelectric conversion elements to electrically connect the second ends of adjacent thermoelectric conversion elements and excessively increase a temperature of the thermoelectric conversion elements,wherein:the thermoelectric conversion elements each comprise a first structural portion joined to the first electrode and a second structural portion joined to the second electrode, the second electrode being smaller in volume than the first electrode, andthe second structural portion is diffusion-bonded to the second electrodes.2. The thermoelectric conversion module according to claim 1 , wherein:conduction of heat from the heating source is controlled by a difference in ...

EXHAUST GAS CLEAN-UP SYSTEM EQUIPPED WITH POWER GENERATING FUNCTION

The system comprises a steam reforming unit to produce hydrogen from exhaust gas supplied, a hydrogen permeable membrane to allow only hydrogen produced by the steam reforming unit to pass through it, a hydrogen storage unit to absorb hydrogen supplied through the hydrogen permeable membrane and release absorbed hydrogen, a fuel cell to generate power using hydrogen supplied from the hydrogen storage unit, a gas clean-up unit to clean up residual gases delivered not passing through the hydrogen permeable membrane, and a control unit to control the hydrogen storage unit to absorb or release hydrogen depending on whether the fuel cell is supplied with sufficient hydrogen. 1. An exhaust gas clean-up system equipped with a power generating function , comprising:a steam reforming unit to produce hydrogen from exhaust gas supplied,a hydrogen permeable membrane configured to allow only hydrogen produced by the steam reforming unit to pass through it,a hydrogen storage unit configured to absorb hydrogen supplied through the hydrogen permeable membrane and release absorbed hydrogen,a fuel cell configured to generate power using hydrogen supplied from the hydrogen storage unit,a gas clean-up unit configured to clean up residual gases not passing through the hydrogen permeable membrane, anda control unit configured to control the hydrogen storage unit to absorb or release hydrogen depending on whether the fuel cell is supplied with sufficient hydrogen.2. The exhaust gas clean-up system equipped with a power generating function according to claim 1 , comprising a hydrogen delivery path extending from the hydrogen permeable membrane to the gas clean-up unit via the hydrogen storage unit and the fuel cell.3. The exhaust gas clean-up system equipped with a power generating function according to claim 1 , comprising a residual gas delivery path extending from the steam reforming unit to the gas clean-up unit bypassing the hydrogen storage unit and the fuel cell.4. The exhaust gas ...

LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. 144-. (canceled)45. A method of manufacturing a semiconductor device comprising the steps of:irradiating a substrate with a pulsed laser light at a converging point within the substrate, so that the converging point of the pulsed laser light is positioned within the substrate to form a modified spot within the substrate at the converging point; andperforming the irradiating step at multiple locations along each of a plurality of intersecting cutting lines along which the substrate is to be cut to form a plurality of modified spots within the substrate at converging points of the pulsed laser light, respectively, without melting a pulsed laser light incident surface of the substrate, the modified spots each having a modified region, the modified spots being formed intermittently along each of the plurality of intersecting cutting lines, the modified spots are formed in the substrate only by the laser irradiation converging within the substrate; andcutting the substrate into parts by dry processing along the plurality of intersecting cutting lines by growing cracks from the modified spots to grow towards a front and a ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate , and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 16-. (canceled)7. A method of manufacturing a light emitting device from an object comprising a sapphire substrate having a front face of a (0001) plane of the sapphire substrate and a flat rear face , a gallium nitride compound semiconductor layer formed on the front face of the sapphire substrate , and a plurality of light emitting diodes formed in the gallium nitride compound semiconductor layer in a matrix , the method comprising:irradiating the sapphire substrate with laser light, thereby forming a plurality of modified regions embedded within the sapphire substrate along each line of a plurality of cutting lines arranged in a grid running between the light emitting diodes which are adjacent to one another, the cutting lines comprising lines extending in a direction along a (1120) plane of the sapphire substrate and in a direction along a (1100) plane of the sapphire substrate which is orthogonal thereto; anddividing the object by fractures generated in the sapphire substrate into a plurality of chips.8. The method of manufacturing a light emitting device according to claim 7 , wherein the fractures separate the light emitting diodes from each other. The present invention relates to a ...

THERMOELECTRIC CONVERSION UNIT, THERMOELECTRIC CONVERSION MODULE, AND EXHAUST-GAS ELECTRICITY GENERATION UNIT

A plurality of thermoelectric conversion modules each includes a plurality of thermoelectric conversion elements arranged adjacent to each other, first electrodes joined to first ends of the thermoelectric conversion elements to electrically connect the first ends of adjacent thermoelectric conversion elements, second electrodes joined to opposite, second ends of the thermoelectric conversion elements to electrically connect the second ends of adjacent thermoelectric conversion elements, and a heat absorber provided on first surfaces of the second electrodes which are opposite to second surfaces of the second electrodes that are joined to the thermoelectric conversion elements, wherein the thermoelectric conversion modules are arranged along a flow of heat in a manner that the heat absorbers of the thermoelectric conversion modules form a staggered array. 1. A thermoelectric conversion unit , comprising a plurality of thermoelectric conversion modules each including:a plurality of thermoelectric conversion elements arranged adjacent to each other,first electrodes joined to first ends of the thermoelectric conversion elements to electrically connect the first ends of adjacent thermoelectric conversion elements,second electrodes joined to opposite, second ends of the thermoelectric conversion elements to electrically connect the second ends of adjacent thermoelectric conversion elements, anda heat absorber provided on first surfaces of the second electrodes which are opposite to second surfaces of the second electrodes that are joined to the thermoelectric conversion elements,wherein the thermoelectric conversion modules are arranged along a flow of heat in a manner that the heat absorbers of the thermoelectric conversion modules form a staggered array.2. The thermoelectric conversion unit according to claim 1 , wherein the plurality of thermoelectric conversion modules are provided such that the heat absorber of a first thermoelectric conversion module is greater in ...

EXHAUST GAS PURIFICATION SYSTEM, CATALYST, AND EXHAUST GAS PURIFICATION METHOD

An exhaust gas purification system which is capable of purifying exhaust gas without a noble metal being carried, and maintaining exhaust gas purification performance even at high temperatures; a catalyst; and an exhaust gas purification method are disclosed. A foamed metal catalyst which is made of a transition metal element excepting platinum group elements and is formed of a metal having a porosity of not less than 80%, and which reduces NOx by being brought into contact with an exhaust gas having a hydrogen concentration of not less than a predetermined concentration (e.g., 2%) and a temperature of not less than 230° C., is provided in an exhaust gas passage of an internal combustion engine that discharges the exhaust gas. 1. An exhaust gas purification system , comprising:a heat engine that discharges exhaust gas; anda catalyst which is made of a transition metal element excepting platinum group elements, and is formed of a metal having a porosity of not less than 80%, the catalyst being provided in an exhaust gas passage of the heat engine to reduce NOx by being brought into contact with exhaust gas having a reducing gas concentration of not less than a predetermined concentration and a temperature of not less than 230° C.2. The exhaust gas purification system according to claim 1 , whereinthe reducing gas is hydrogen, and the exhaust gas purification system further comprises hydrogen concentration adjustment means for adjusting a hydrogen concentration of exhaust gas discharged from the heat engine to be not less than the predetermined concentration and feed the same to the catalyst.3. The exhaust gas purification system according to claim 1 , whereinthe heat engine comprises, in an exhaust gas passage, a turbocharger having a turbine, and a three-way catalyst arranged in an exhaust gas downstream side of the turbine, andthe catalyst is arranged in an exhaust gas upstream side of the three-way catalyst.4. The exhaust gas purification system according to claim ...

Power supply apparatus and image forming apparatus

The power supply apparatus includes a transformer having primary and secondary sides, a switching element, a feedback unit, a conversion unit that converts a current flowing in a primary winding of the transformer into a voltage, a control unit that controls operation of the switching element, a voltage switching unit that increases the voltage output from the conversion unit and feeds the increased voltage to the control unit when a continuous oscillation state is transited to an intermittent oscillation state. The voltage switching unit switches the voltage of the power supply that is input into the control unit to be higher when the continuous oscillation state is transited to the intermittent oscillation state.

Liquid electromagnetic valve, method of manufacturing liquid electromagnetic valve, and washing machine

A liquid electromagnetic valve includes an inlet connected to an external liquid source; an outlet discharging liquid entering from the inlet; a flow path forming member having a flow path connecting the inlet and the outlet formed thereto; an opening-closing member capable of opening and closing the flow path; a drive portion opening and closing the opening-closing member based on a control performed by an external element; and a minute bubble generator provided in the flow path and having plural narrowing portions for adding minute bubbles to a liquid passing through the flow path by narrowing the flow path in plural stages.

Nail production system and nail production method

A nail production system according to an embodiment of the disclosure includes a first correction section and a first conversion section. The first correction section corrects shape data of an existing nail tip or an existing nail sticker on the basis of measurement data of a nail, to thereby generate shape data of an original nail tip or an original nail sticker. The first conversion section converts the shape data of the original nail tip or the original nail sticker that is generated by the first correction section into print data.

Personal casting system

A profit redistribution device, profit redistribution method, program storage medium, profit redistribution system, content providing device, content providing method, program storage media, and content providing system are disclosed. Profit redistribution processing is performed according to the accumulated points proportionate to the number of times the content with a commercial video is provided to a client PC. Thus, a fair profit redistribution can be easily performed. A preset content with a commercial video is provided to a user when requested from the client PC, and it is possible to provide advertisement information without the user being aware of the commercial.

METHOD FOR CUTTING OBJECT TO BE PROCESSED

A silicon substrate has a main face in a (100) plane, whereby a fracture generated from a molten processed region acting as a start point extends in a cleavage direction of the silicon substrate (a direction orthogonal to the main face of the silicon substrate ). Here, a rear face of an object to be processed A and a front face of an object to be processed for separation A are bonded to each other by anode bonding, whereby the fracture reaches a front face of the object A continuously without substantially changing its direction. When generating a stress in the object for separation A, the fracture has reached a rear face of the object for separation A and thus easily extends toward the object A. 110-. (canceled)11. An object cutting method comprising the steps of:preparing a first sheet-like object to be processed comprising a silicon substrate having a main face in a (100) plane and a second sheet-like object to be processed the size of the silicon substrate being larger than the size of the second object when seen in the thickness direction of the first object;bonding a first-side end face of the first object and a second-side end face of the second object such that the second-side end of the second object face opposes the main face and an outer edge of the silicon substrate is located on the outer side of an outer edge of the second object when seen in the thickness direction of the first object;irradiating the first object with laser light so as to form a molten processed region within the silicon substrate along each of lines set like a grid for cutting the second object and cause a fracture generated from the molten processed region acting as a start point to reach a second-side end face of the first object along the line, the molten processed region being formed a part located on the outer side of the second object as well as a part opposing the second object in the silicon substrate when seen in the thickness direction of the first object; andgenerating a ...

Power source device and image forming apparatus

A power source device includes a transformer, a first switching element and a second switching element, a resonance capacitor, and a switch. One end of the second switching element is connected with one end portion of a primary winding. The other end of the second switching element is connected with one end portion of the resonance capacitor. The primary winding and the resonance capacitor are resonated with each other by alternately operating the first and second switching elements to supply electric power to a load connected with a secondary winding of the transformer. The primary winding includes a first primary winding and a second primary winding. Depending on the load, the switch connects or disconnects between the first primary winding and the resonance capacitor, or connects or disconnects between the second primary winding and said resonance capacitor.

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 1. A substrate dividing method comprising the steps of:irradiating a substrate with laser light while positioning a light-converging point within the substrate, so as to form a modified region due to multiphoton absorption within the substrate, and causing the modified region to form a starting point region for cutting along a line along which the substrate should be cut in the substrate inside by a predetermined distance from a laser light incident face of the substrate; andgrinding the substrate after the step of forming the starting point region for cutting such that the substrate attains a predetermined thickness.2. A substrate dividing method according to claim 1 , wherein the substrate is a semiconductor substrate.3. A substrate dividing method according to claim 2 , wherein the modified region is a molten processed region.4. A substrate dividing method according to claim 1 , wherein the substrate is an insulating substrate.5. A substrate dividing method according to one of to claim 1 , wherein a front face of the substrate is formed with a functional device; andwherein a rear face of the substrate is ground in the step of grinding the substrate.6. A substrate dividing method according to ...

LAMINATED ELEMENT MANUFACTURING METHOD

A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light. 1. A laminated element manufacturing method comprising:a laminating step of forming a laminated body of a semiconductor wafer including a semiconductor substrate having a front surface and a rear surface and a circuit layer including a plurality of functional elements arranged in two-dimension along the front surface; anda laser light irradiation step of forming a modified region and a fracture in the laminated body by irradiating the laminated body with a laser light after the laminating step,wherein the laminating step includesa first bonding step of preparing, as the semiconductor wafer, a first wafer and a second wafer, and bonding the circuit layer of the second wafer to the circuit layer of the first wafer such that the respective functional elements of the first wafer and the respective functional elements of the second wafer correspond to each other,a grinding step of grinding the semiconductor substrate of the second wafer after the first bonding step, anda second bonding step of preparing a third wafer as the semiconductor wafer after the grinding step, and bonding the circuit layer of the third wafer to the semiconductor substrate of the second wafer such that the respective functional elements of the second wafer and the respective functional elements of the third wafer correspond to each other, andin the laser light irradiation step, the modified region is formed along a line to cut set to ...

WORKPIECE CUTTING METHOD

A object cutting method includes a first step of attaching an expandable sheet to a front surface or a back surface of a object, a second step of irradiating the object with a laser light along a line to cut to form a modified region, and expanding the expandable sheet to divide at least a part of the object into a plurality of chips and to form a gap that exists between the chips and extends to a side surface crossing the front surface and the back surface of the object, a third step of, after the second step, filling the gap with a resin from an outer edge portion including the side surface of the object, a fourth step of, after the third step, curing and shrinking the resin, and a fifth step of, after the fourth step, taking out the chips from the expandable sheet. 1. An object cutting method comprising:a first step of attaching an expandable sheet to a front surface or a back surface of an object to be processed;a second step of, after the first step, irradiating the object with a laser light along a line to cut to form a modified region, and expanding the expandable sheet to divide at least a part of the object into a plurality of chips and to form a gap that exists between the chips and extends to a side surface crossing the front surface and the back surface of the object;a third step of, after the second step, filling the gap with a resin from an outer edge portion including the side surface of the object;a fourth step of, after the third step, curing and shrinking the resin; anda fifth step of, after the fourth step, taking out the chips from the expandable sheet.2. An object cutting method comprising:a first step of attaching an expandable sheet to a front surface or a back surface of an object to be processed;a second step of, after the first step, irradiating the object with a laser light along a line to cut to form a modified region, and expanding the expandable sheet to divide at least a part of the object into a plurality of chips and to form a gap ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 1. A substrate dividing method comprising the steps of:irradiating a substrate with laser light while positioning a light-converging point within the substrate, so as to form a modified region due to multiphoton absorption within the substrate, and causing the modified region to form starting point region for cutting along a line along which the substrate should be cut in the substrate inside by a predetermined distance from a laser light incident face of the substrate; andgrinding the substrate after the step of forming the starting point region for cutting such that the substrate attains a predetermined thickness.2. A substrate dividing method according to claim 1 , wherein the substrate is a semiconductor substrate.3. A substrate dividing method according to claim 2 , wherein the modified region is a molten processed region.4. A substrate dividing method according to claim 1 , wherein the substrate is an insulating substrate.5. A substrate dividing method according to claim 1 , wherein a front face of the substrate is formed with a functional device; andwherein a rear face of the substrate is ground in the step of grinding the substrate.6. A substrate dividing method according to claim 5 , ...

Vehicle

A vehicle includes a main body, a steerable wheel, a steering, a steering actuator, and an electronic controller. The main body includes a saddle. The steerable wheel is coupled to the main body via a suspension. The steering is turnably coupled to the main body to steer the steerable wheel. The steering actuator is configured to apply steering torque to the steerable wheel. The electronic controller is configured to control the steering torque using the steering actuator and configured to generate steering damper torque to the steerable wheel using the steering actuator upon determining a reduced contact of the steerable wheel with a traveling surface with respect to a first prescribed threshold.

Terminal fitting

The present invention concerns a female terminal fitting ( 20 ) to be crimped to a wire including a core ( 12 ) formed by putting a plurality of strands ( 11 ) together and including a bottom plate portion ( 22 ) on which the core ( 12 ) is to be placed, and a pair of crimping pieces ( 25 L, 25 R) connected to the bottom plate portion ( 22 ) and to be crimped to the core ( 12 ) in such a manner as to embrace the core ( 12 ) placed on the bottom plate portion ( 22 ). Butting parts of the respective crimping pieces ( 25 L, 25 R) are formed with a thinning portion ( 27 ), and a corner portion ( 30 ) is formed by deforming the thinning portion ( 27 ) when the respective crimping pieces ( 25 L, 25 R) are crimped to the core ( 12 ). According to such a configuration, the thinning portion ( 27 ) is preferentially deformed by crimping to form the corner portion ( 30 ). Thus, a clearance formed at the butting parts of the respective crimping pieces ( 25 L, 25 R) can be made smaller than in the case where the thinning portion ( 27 ) are not provided.

Microbubble generator, washing machine, and home appliance

A microbubble generator is formed from at least two of a flow path constituting section that constitutes a flow path through which a liquid is passable, and a decompression member including a colliding section that is fitted into the flow path constituting section and locally reduces a cross-sectional area of the flow path to generate microbubbles in the liquid that passes through the flow path. This microbubble generator comprises includes an outlet connecting to a negative pressure producing section of the decompression member, an outside air introduction port provided in the flow path constituting section to introduce outside air, and an outside air introduction path communicating between the outside air introduction port and the outlet.

THERMOELECTRIC CONVERSION UNIT, THERMOELECTRIC CONVERSION MODULE, AND EXHAUST-GAS ELECTRICITY GENERATION UNIT

An exhaust-gas electricity generation unit is provided between an engine unit and a discharge unit. The exhaust-gas electricity generation unit includes a connecting pipe connecting the engine unit to the discharge unit and defining an exhaust-gas flow passage in which exhaust gas expelled from the engine unit flows, a plurality of thermoelectric conversion modules provided on an inner surface of the connecting pipe, along flow of heat, near the engine unit and near the discharge unit, and a flow-velocity increasing mechanism for causing the exhaust gas in the connecting pipe to have an increased flow velocity near the discharge unit than near the engine unit. 1. An exhaust-gas electricity generation unit provided between an engine unit and a discharge unit , comprising:a connecting pipe connecting the engine unit to the discharge unit and defining an exhaust-gas flow passage in which exhaust gas expelled from the engine unit flows;a plurality of thermoelectric conversion modules provided on an inner surface of the connecting pipe, along flow of heat, near the engine unit and near the discharge unit; anda flow-velocity increasing means for causing the exhaust gas in the connecting pipe to have an increased flow velocity near the discharge unit than near the engine unit;wherein the flow-velocity increasing means comprises at least one gas-flow guide for guiding the exhaust gas from near the center line of the connecting pipe toward the inner surface of the connecting pipe; andwherein the gas-flow guide is provided to extend from near the upstream end of the exhaust-gas flow passage toward the individual thermoelectric conversion modules and has an opening in a region where the gas-flow guide traverses the connecting pipe.2. The exhaust-gas electricity generation unit according to claim 1 , wherein the gas-flow guide is provided to linearly extend from near the upstream end of the exhaust-gas flow passage toward the individual thermoelectric conversion modules.3. The ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate , and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 1. A substrate dividing method comprising the steps of:irradiating a substrate with laser light while positioning a light-coverging point within the substrate, so as to form a modified region due to multiphoton absorption within the substrate, and causing the modified region to form a starting point region for cutting along a line along which the substrate should be cut in the substrate inside by a predetermined distance from a laser light incident face of the substrate; andgrinding the substrate after the step of forming the starting point region for cutting such that the substrate attains a predetermined thickness.26-. (canceled) The present invention relates to a substrate dividing method used for dividing a substrate such as a semiconductor substrate in a step of making a semiconductor device or the like.As semiconductor devices have been becoming smaller in recent years, there are cases where a semiconductor substrate is thinned to a thickness of several tens of micrometers in a step of making a semiconductor device. When thus thinned semiconductor substrate is cut and divided by a blade, chipping and cracking occur more than in the case where a semiconductor substrate is thicker, ...

THERMOELECTRIC CONVERSION MODULE

The thermoelectric conversion module includes a plurality of thermoelectric conversion elements arranged side by side, first electrodes that are joined to first ends of the thermoelectric conversion elements and electrically connect the first ends of the adjacent thermoelectric conversion elements to each other, second electrodes that are joined to second ends of the thermoelectric conversion elements and electrically connect the second ends of the adjacent thermoelectric conversion elements to each other, a cooling mechanism that cools the first electrodes, a first covering member that covers the first electrodes, and a second covering member that covers at least part of each of the plurality of thermoelectric conversion elements, and the second covering member has a thermal conductivity lower than that of the first covering member. 1. A thermoelectric conversion module comprising:a plurality of thermoelectric conversion elements arranged side by side;first electrode electrodes that are joined to first ends of the thermoelectric conversion elements and electrically connect the first ends of the adjacent thermoelectric conversion elements to each other;second electrodes that are joined to second ends of the thermoelectric conversion elements and electrically connect the second ends of the adjacent thermoelectric conversion elements to each other;a cooling mechanism that cools the first electrodes;a first covering member that covers the first electrodes; anda second covering member that covers at least part of each of the plurality of thermoelectric conversion elements,wherein the second covering member has a thermal conductivity lower than a thermal conductivity of the first covering member.2. The thermoelectric conversion module according to claim 1 ,wherein the first covering member is formed of a resin mixed with a metal material.3. The thermoelectric conversion module according to claim 1 ,wherein the second covering member includes a heat insulation material.4. ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 16-. (canceled)7. A method of manufacturing a semiconductor device formed using a substrate dividing method , the manufacturing method comprising the steps of:irradiating a laser light incident face of a substrate, the substrate comprising semiconductor material and having a surface formed with at least one semiconductor device, with laser light while positioning a light-converging point within the substrate, thereby forming a molten processed region embedded within the substrate along each line of a plurality of cutting lines arranged in a grid with respect to the substrate, the substrate having a front face and a rear face through the substrate, the front face of the substrate being formed with at least one functional device, the forming of each molten processed region resulting in the forming of a starting point region for cutting the substrate, each molten processed region being located inside the substrate at a predetermined distance from the laser light incident face of the substrate; andgrinding the rear face of the substrate after the step of forming the starting point regions, thereby eliminating the molten processed regions from the substrate without leaving the molten processed ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate , and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 16-. (canceled)7: A semiconductor chip manufacturing method , wherein a semiconductor substrate having a plurality of circuit devices formed in matrix on a front face of the semiconductor substrate is divided into the circuit devices to obtain semiconductor chips , the manufacturing method comprising the steps of:irradiating a laser light incident face of a substrate, the substrate comprising semiconductor material and having a surface formed with at least one semiconductor device, with laser light while positioning a light-converging point within the substrate, thereby forming a molten processed region embedded within the substrate along each line of a plurality of cutting lines arranged in a grid with respect to the substrate, the substrate having a front face and a rear face through the substrate, the front face of the substrate being formed with at least one functional device, the forming of each molten processed region resulting in the forming of a starting point region for cutting the substrate, and each molten processed region being located inside the substrate at a predetermined distance from the laser light incident face of the substrate without the molten processed region ...

PRESS-FORMING METHOD

A press-forming method which press-forms a final shaped article which comprises a top sheet part, vertical wall parts, and flange parts and which has at least one bent part in a longitudinal direction, which method forms the top sheet part, vertical wall parts, bent part, and flange parts, includes a first shaping process of bending a flange part at an intersecting part until an angle of the flange part with a horizontal line becomes αin a plane which includes a horizontal line which connects an intersecting part of a vertical wall part and a flange part and a center of curvature of the bent part and which is vertical to the high strength steel sheet and a second shaping process of additionally bending the flange part after the first shaping process at the intersecting part until the angle of the flange part with the horizontal line becomes αin that plane, makes the additional bending angle β of α-αpredetermined ranges, and thereby reduces the warping and torsion of the final shaped article. 2. The press-forming method according to wherein said bent part is an arc or a curve with a curvature which continuously changes.3. The press-forming method according to wherein at least at one of said first shaping process and said second shaping process claim 1 , one of facing dies is divided into a pad and a partial shaping die claim 1 , the pad and the other of said facing dies press the steel sheet claim 1 , and the partial shaping die and the other of said facing dies are used to make the steel sheet plastically deform.4. The press-forming method according to wherein at least at one of said first shaping process and said second shaping process claim 2 , one of facing dies is divided into a pad and a partial shaping die claim 2 , the pad and the other of said facing dies press the steel sheet claim 2 , and the partial shaping die and the other of said facing dies are used to make the steel sheet plastically deform. The present invention relates to a press-forming method ...

SUBSTRATE DIVIDING METHOD

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate , and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 16-. (canceled)7: A method of manufacturing a semiconductor chip , the manufacturing method comprising steps of:irradiating internal locations inside of a semiconductor wafer with laser light, thereby forming a plurality of modified regions along each line of a plurality of intersecting cutting lines arranged in a grid, the semiconductor wafer having a plurality of functional elements formed on a front face of the semiconductor wafer;grinding a rear face of the semiconductor wafer after formation of all of the modified regions, wherein after completion of the grinding step, a fracture extending from each modified region in a thickness direction of the semiconductor wafer reaches the rear face of the semiconductor wafer;chemically etching the rear face of the semiconductor substrate, thereby forming a plurality of chamfers along each of the plurality of cutting lines arranged in the grid; anddividing the semiconductor wafer, wherein the semiconductor wafer is divided when a fracture from each modified region reaches the front face and the rear face of the semiconductor wafer, thereby providing at least one manufactured semiconductor chip.8: The method of manufacturing a semiconductor chip ...

Seal member and waterproof connector

A seal ( 30 ) to be mounted into a rear part of a housing 20 and is formed with seal holes ( 32 ) configured to allow wires ( 26 ) connected to rear parts of terminal fittings ( 24 ) to pass therethrough in a liquid-tight manner. The seal ( 30 ) includes a body ( 31 ) constituting rear areas ( 32 R) of the seal holes ( 32 ) and having an outer peripheral lip ( 37 ) formed on an outer periphery. An area between inner peripheries of the seal holes ( 32 ) and the outer peripheral lip ( 37 ) defines a solid resilient portion ( 39 ). Following portions ( 40 ) project forwardly of the outer peripheral lip ( 37 ) from a front surface of the body ( 31 ). The following portions ( 40 ) constitute front areas ( 32 F) of the seal holes ( 32 ) and are resiliently deformable in directions intersecting a penetrating direction of the seal holes ( 32 ).

Polyolefin plastic compositions

A polyolefin plastic composition having improved transparency and reduced molding shrinkage, which consists essentially of at least one polymer or copolymer of an aliphatic monoolefin and dibenzylidene sorbitol, the proportion of the dibenzylidene sorbitol being 0.1 to 0.7% by weight based on the total weight of the composition.

Polyolefin resin composition comprising a dibenzylidene sorbitol derivative

A polyolefin resin composition consisting essentially of at least one homopolymer or copolymer of an aliphatic monoolefin and 0.05 to 2% by weight, based on the weight of the composition, of a dibenzylidene sorbitol derivative of the following formula ##STR1## wherein R and R' are different from each other and each represents a member selected from the class consisting of a hydrogen atom, a chlorine atom, alkyl groups having 1 to 3 carbon atoms and alkoxy groups having a C 1 -C 3 alkyl moiety.

Linear liquid fuel gasification type combustor

高粘度材シ−リング装置

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Gas turbine combustor

COMPONENT ASSEMBLY DEVICE AND METHOD

Method for production of globule alumina support

カラー陰極線管

(57)【要約】 【課題】反射防止と帯電防止を向上して高品質の画像表 示を可能としたカラー陰極線管を提供する。 【解決手段】パネルガラス１と電子銃を収納するネッ ク、およびパネルとネックを連接するファンネルとから なる真空外囲器を有し、パネルガラス１の内面に複数色 の蛍光体層４３を塗布して表示面を形成してなり、パネ ルガラス１が視感領域で選択吸収性を有する酸化ネオジ ムまたは酸化エルビウムの一方または双方のイオンを含 み、その表面に低抵抗かつ低反射で光選択吸収性をもつ 表面処理膜として２１、２２、２３からなる多層膜を有 する。

Data transfer controller

Liquefaction of coals

レンズ付きフイルムユニット

(57)【要約】 【課題】 ストロボ発光を禁止する操作部材をストロボ 充電開始操作部材に兼用した。 【解決手段】 ストロボ回路には、メインコンデンサに 充電を開始する充電開始用スイッチと、トリガー用コン デンサ８０の放電を禁止する発光禁止用スイッチとが設 けられており、各スイッチを構成する一対の端子のうち のいずれか一方の端子を共通端子としている。充電開始 用スイッチを構成する端子６９ａ，６９ｂと、発光禁止 用スイッチを構成する端子８２ａ，６９ｂとは、ストロ ボ回路基板５０の前面に露呈して設けられている。これ らの端子６９ａ，６９ｂ，８２ａと前カバーに設けたス トロボ充電開始操作部材１７との間には、操作部材１７ がスライド操作されたときに各端子６９ａ，６９ｂ，８ ２ａを短絡させる３つのスイッチ片８８ｂ〜８８ｄをも ったスイッチ部材８６が挟装されている。

巻取ドラムにおけるケ−ブル巻始め端固定方法およびその装置

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

ブリルアン散乱光の周波数シフトの測定方法及びこれを用いた装置

【課題】安価な部品構成でブリルアン散乱光の周波数シフトを高速に測定し、任意の測定点でのリアルタイムの周波数変化の検出が可能なブリルアン散乱光の周波数シフトの測定方法及びこれを用いた装置を実現する。 【解決手段】光ファイバで生じるブリルアン散乱光の周波数シフトの測定方法であって、光学部から光ファイバにパルス光を出射し、光ファイバから戻ってくるブリルアン散乱光が光学部に入射され、ブリルアン散乱光を受光部で電気信号に変換し、電気信号と発振器から出力される信号をミキサで混合して出力し、混合された信号の高周波成分をフィルタ部で除去し、フィルタ部から出力された信号を信号処理部でサンプリングし、得られたサンプリングデータを用いて高速フーリエ変換により周波数シフトを求める。 【選択図】 図１

Production of beverage in pouch

Process for producing masterbatch, masterbatch, and use thereof

Disclosed is a process for producing a masterbatch, comprising a step of melt-kneading an ionomer, that is an ethylene-unsaturated carboxylic acid copolymer partially neutralized with potassium, and a hydrophobic polymer comprised of a hydrocarbon compound, and a step of drying the melt-kneaded mixture at a temperature of not less than the Vicat softening point of the ionomer after the melt-kneading.

Process for producing masterbatch, masterbatch, and use thereof

Side member for chassis frame, and manufacture thereof

(57)【要約】 【課題】 長手方向の部位に応じた最適な板厚分布を実 現でき安全性が向上するのみならず、小型のプレス加工 機で成形できる上に金型の数も少なくて済み低コスト化 をも推進できるシャシーフレーム用サイドメンバーおよ びその製造方法を提供する。 【解決手段】 車体の前後方向に伸びるサイドメンバー ２を屈曲部２ａ、２ｃと直線部２ｂ、２ｄとに分割し、 それら分割された各メンバー片２ａ、２ｂ、２ｃ、２ｄ を直列に接続してなる。本発明によれば、各メンバー片 ２ａ、２ｂ、２ｃ、２ｄの板厚を異ならせることによ り、長手方向の部位に応じた最適な板厚分布を実現で き、衝突安全性が向上する。また、各メンバー片２ａ、 ２ｂ、２ｃ、２ｄを屈曲部２ａ、２ｃと直線部２ｂ、２ ｄとしたので、少なくとも直線部２ｂ、２ｄをサイドメ ンバー２、２の左右で共用でき、金型の数が減る。ま た、各メンバー片２ａ、２ｂ、２ｃ、２ｄの長さが短く なるので小型のプレス加工機を用いることができる。よ って、低コスト化を推進できる。

Film for back sheet of disposable diaper

(57)【要約】 【課題】 通気性、透湿性に優れると共に、優れたソフ ト感を有し、表面の汚れの生じ難い通気性フィルムから なる、使い捨ておむつのバックシート用フィルムを提供 する。 【解決手段】 結晶性プロピレン系樹脂のマトリックス (a) ６７〜９５体積％と、少なくともエチレン−α−オ レフィン共重合体ゴムを含有する分散相(b) ３３〜５体 積％との分散構造のプロピレン系樹脂組成物からなるフ ィルムであって、そのフィルムのマトリックス(a) 中に フィルムの厚さ方向に向かって形成されたクレーズ(c) と、分散相(b) 中に形成されたボイド(d) を有している 通気性フィルムからなる、使い捨ておむつのバックシー ト用フィルム。

Air-permeable film and its production

(57)【要約】 【課題】 通気性、透湿性を広範囲で任意、且つ簡便に コントロールされ、又優れた感触、強度を有し、更に生 産安定性にも優れた通気性フィルム及びその製造法を提 供する。 【解決手段】EPR含量が２〜３５重量％であるエチレン ープロピレンブロック共重合体で、そのメルトフローレ ーシオが2〜150g/10分（230℃、2.16kg荷重）であり、 且つプロピレン単独重合体部分のメルトフローレーシオ が5〜300g/10分（230℃、2.16kg荷重）である共重合体か らなる通気性フィルムで、その厚さ方向に形成されたク レーズと分散相中に形成されたボイドを有している通気 性フィルム及び該ＥＰＲ含有エチレンープロピレンブロ ック共重合体よりなるフィルムを緊張状態に保ち、この フィルム面に先端部が鋭角な支持体を当接して該フィル ムを局部的に折り曲げ、その折り曲げ角度を50〜140度 の変形域として、該フィルムを順次相対的に移動させる ことによって該フィルムの厚さ方向にクレーズを形成さ せ、また分散相中にボイドを形成させることよりなる通 気性フィルムの製造方法である。

Method and device for painting treatment of automotive body or the like

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Chrominance signal processing device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Electroconductive masterbatch and resin composition including the same

The present invention is to provide a conductive masterbatch using a polyamide resin, the conductive masterbatch that has an excellent kneadability/manufacturability and formability and an excellent dispersibility of conductive fillers such as a carbon black, and shows stable conductivity even when a large amount of such conductive fillers are contained therein, and a resin composition containing the conductive masterbatch. That is, the present invention is to provide the conductive masterbatch, which includes at least a conductive filler selected from carbon blacks and carbon nanotubes, a polyamide resin, and a copolymer which contains at least a vinyl monomer having a functional group reactive with the polyamide resin and a styrene as monomer units, and in which the content of the conductive filler is in the range of 10% by mass to 40% by mass, and the resin composition containing the conductive masterbatch.

Preparation of o-substituted-n-hydroxyphthalimide

Pressure-sensitive urethane adhesive composition

(57)【要約】 【課題】無溶剤型で、長い乾燥炉や塗工液の加熱前処理 が不要で、ポットライフやエージングがなく、暗反応に よってゲル化したり粘着特性が変化したりせず、かつ汎 用性の高いウレタン系感圧性接着剤組成物を提供する。 【解決手段】ウレタン系感圧性接着剤組成物は少なくと もウレタン（メタ）アクリレートオリゴマーおよび反応 性希釈剤とを、各々１種類以上含んでなる組成物であっ て、かつ反応性希釈剤はメタクリロイル基を有するメタ クリレート系の反応性希釈剤であり、紫外線照射もしく は電子線照射によって架橋させることにより得られる。

Electrostatic painting device with rotary atomization

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Structure of gas turbine combustor

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Register tracer device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Document forming device

(57)【要約】 【課題】 切断用ブレードの摩耗を抑制することが可能 で、かつ、電極をパターニングする工程などにおいて用 いられる処理液が基板上に停滞せず、ファインな線形 （パターン）を得ることが可能な電子部品の製造方法を 提供する。 【解決手段】 ユニット基板１の表面の切断ラインＡ上 にある電極（接続電極）２ａに、所定の幅Ｗｇのギャッ プＧを形成し、切断用ブレードにより、ギャップＧを挟 んで対向する一対の電極パターン２のそれぞれの一部を 切削しつつ、ユニット基板１のギャップ部分を切断する ことにより、互いに対向する２つの切断端面に接続電極 ２ａ，２ａを露出させる。また、ギャップＧの幅Ｗｇ を、Ｗｇ≦Ｗｂ−２α（Ｗｂ：切断用ブレードの厚み， α：切断用ブレードの厚み方向への切断位置ずれ量）と する。

COMPOSITIONS FOR CONTROLLING UNACCEPTIES ODORED WITH ODOR CONTROLS AND MICROPHONES CONTAINING AN ACTIVE SUBSTANCE

Automatic cutting device for tapered thread for pipe

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Combine

Threshing action controller of combined harvester

Cleaning method of silicon object surface

(57)【要約】 【課題】半導体デバイスの物性に対する影響が懸念され ている幾つかの金属イオンについて、シリコンウエハ等 のシリコン物品上に残存する量を低減できる、超純水を 使用するシリコン物品の洗浄方法を提供すること。 【解決手段】シリコン物品の表面を洗浄液及びリンス液 で順次処理することを含むシリコン物品表面の清浄化方 法であって、超純水をユースポイント直前で、膜内部に イオン交換機能を有する高分子鎖が保持されている多孔 膜であって、膜１ｇ当たり０．２〜１０ミリ当量のイオ ン交換基を有し、平均孔径０．０１〜１μｍの多孔膜を 充填したモジュールでさらに処理した水を、前記洗浄液 の調製液及び／又は前記リンス液として用いる方法。

High contact pressure resistant member and its manufacturing method

(57)【要約】 【課題】 均一かつ微細に析出したＭ ２３ Ｃ ６ 型炭化物 によって優れた耐面疲労強度を備えた耐高面圧部材と、 中間保持工程においてＭ ２３ Ｃ ６ 型炭化物を均一かつ微 細に析出させることができ、もって部材の耐面疲労強度 を大幅に向上させることができる耐高面圧部材の製造方 法を提供する。 【解決手段】 Ｃ含有量が０．６〜１．５％、あるいは 浸炭処理または浸炭窒化処理によって表面Ｃ量を０．６ 〜１．５％に富化させた機械構造用鋼を６００〜７５０ ℃の中間保持温度に昇温するに際して、５００〜６５０ ℃の温度範囲を０．２〜３０℃／ｍｉｎの昇温速度で加 熱し、引き続き前記中間保持温度範囲内で保持し、その 後Ａｃ１変態温度以上、かつＡｃｍ変態温度以下に保持 した後、急冷して焼入れする。

Operation control system for air conditioner

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。