Capacitor

A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.

Raw material for vaporising dielectric thin layers - comprises organic metal cpd. dissolved in THF

Raw material for vaporising dielectric thin layers of the oxide system is claimed, in which the organic metal cpd. is dissolved in THF. The organic metal cpd. is dissolved in a solvent contg. THF. The metal atom of the organic metal-raw material is a metal selected from Pb, Ti, Zr and alkaline earths. The material is a cpd., in which the metal atom is coupled via oxygen atoms to the organic gps.. The metal atom is esp. Sr, Ba or Ti. The cpd. is esp. metal-acetylacetonate, -dipivaloylmethanate, -alkoxide, -hexafluoroacetylacetonate, -pentafluoropropanoyl pivaloylmethanate, -cyclopentadienyl or one or more derivs. of these cpds., in which the metal is Pb, Ti, Zr or alkaline earth; or Sr- and/or Ba-, or Ti-dipivaloylmethanate cpd. and Ti dipivaloylmethanate; or Si- and/or Ba-dipivaloylmethanate and Ti isopropoxide. USE - Used to mfr. capacitors for storage appts. using a CVD process (claimed).

Process for producing a thin dielectric layer of an oxide system using the CVD process